JP2006060023A - エレクトロルミネッセンス装置及びエレクトロルミネッセンス装置の製造方法ならびに電子機器 - Google Patents
エレクトロルミネッセンス装置及びエレクトロルミネッセンス装置の製造方法ならびに電子機器 Download PDFInfo
- Publication number
- JP2006060023A JP2006060023A JP2004240450A JP2004240450A JP2006060023A JP 2006060023 A JP2006060023 A JP 2006060023A JP 2004240450 A JP2004240450 A JP 2004240450A JP 2004240450 A JP2004240450 A JP 2004240450A JP 2006060023 A JP2006060023 A JP 2006060023A
- Authority
- JP
- Japan
- Prior art keywords
- electroluminescence device
- inorganic semiconductor
- fine particles
- semiconductor material
- organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 62
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000463 material Substances 0.000 claims abstract description 43
- 239000004065 semiconductor Substances 0.000 claims abstract description 41
- 230000008569 process Effects 0.000 claims abstract description 29
- 239000007791 liquid phase Substances 0.000 claims abstract description 21
- 150000004696 coordination complex Chemical class 0.000 claims abstract description 12
- 238000005401 electroluminescence Methods 0.000 claims description 42
- 239000010419 fine particle Substances 0.000 claims description 32
- 238000002347 injection Methods 0.000 claims description 18
- 239000007924 injection Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 13
- 239000007788 liquid Substances 0.000 claims description 11
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 11
- 238000005191 phase separation Methods 0.000 claims description 10
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 10
- 229910052741 iridium Inorganic materials 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical group [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 150000002736 metal compounds Chemical class 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims description 3
- 239000000243 solution Substances 0.000 claims description 3
- 125000003709 fluoroalkyl group Chemical group 0.000 claims description 2
- 125000006617 triphenylamine group Chemical group 0.000 claims description 2
- 238000004020 luminiscence type Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract description 4
- 239000012071 phase Substances 0.000 abstract description 3
- 238000002513 implantation Methods 0.000 abstract 2
- 238000002955 isolation Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 58
- 239000000758 substrate Substances 0.000 description 26
- 239000002346 layers by function Substances 0.000 description 13
- 238000007789 sealing Methods 0.000 description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 238000009832 plasma treatment Methods 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229920001940 conductive polymer Polymers 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- 239000003446 ligand Substances 0.000 description 4
- 239000012044 organic layer Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- FXPLCAKVOYHAJA-UHFFFAOYSA-N 2-(4-carboxypyridin-2-yl)pyridine-4-carboxylic acid Chemical compound OC(=O)C1=CC=NC(C=2N=CC=C(C=2)C(O)=O)=C1 FXPLCAKVOYHAJA-UHFFFAOYSA-N 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000011344 liquid material Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 230000002940 repellent Effects 0.000 description 3
- 239000005871 repellent Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- HBEDSQVIWPRPAY-UHFFFAOYSA-N 2,3-dihydrobenzofuran Chemical compound C1=CC=C2OCCC2=C1 HBEDSQVIWPRPAY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- -1 iridium metal complex Chemical class 0.000 description 2
- 229910000484 niobium oxide Inorganic materials 0.000 description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 229920002098 polyfluorene Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- VPYJNCGUESNPMV-UHFFFAOYSA-N triallylamine Chemical compound C=CCN(CC=C)CC=C VPYJNCGUESNPMV-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- YMMGRPLNZPTZBS-UHFFFAOYSA-N 2,3-dihydrothieno[2,3-b][1,4]dioxine Chemical compound O1CCOC2=C1C=CS2 YMMGRPLNZPTZBS-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- 229940093475 2-ethoxyethanol Drugs 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 229920000265 Polyparaphenylene Chemical class 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- HHNHBFLGXIUXCM-GFCCVEGCSA-N cyclohexylbenzene Chemical compound [CH]1CCCC[C@@H]1C1=CC=CC=C1 HHNHBFLGXIUXCM-GFCCVEGCSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- IDGUHHHQCWSQLU-UHFFFAOYSA-N ethanol;hydrate Chemical compound O.CCO IDGUHHHQCWSQLU-UHFFFAOYSA-N 0.000 description 1
- 125000005678 ethenylene group Chemical class [H]C([*:1])=C([H])[*:2] 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000011817 metal compound particle Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 238000002715 modification method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012454 non-polar solvent Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- DANYXEHCMQHDNX-UHFFFAOYSA-K trichloroiridium Chemical compound Cl[Ir](Cl)Cl DANYXEHCMQHDNX-UHFFFAOYSA-K 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/115—Polyfluorene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
- H10K85/146—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE poly N-vinylcarbazol; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
- Y10T428/256—Heavy metal or aluminum or compound thereof
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
【解決手段】 電子注入および輸送部位を無機半導体材料で、正孔注入および輸送部位を有機半導体材料で、発光部位を金属錯体で構成し、これらを液相プロセスにより、制御された相分離界面持つ薄膜として製膜し素子化することで達成した。
【選択図】 図5
Description
電極間に、発光部位、電子注入および輸送部位、正孔注入および輸送部位を有するエレクトロルミネッセンス装置であって、前記電子注入および輸送部位が無機半導体材料、前記正孔注入および輸送部位が有機半導体材料、前記発光部位が金属錯体で構成されていることを特徴とする。
Claims (21)
- 電極間に、発光部位、電子注入および輸送部位、正孔注入および輸送部位を有するエレクトロルミネッセンス装置であって、前記電子注入および輸送部位が無機半導体材料、前記正孔注入および輸送部位が有機半導体材料、前記発光部位が金属錯体で構成されていることを特徴とするエレクトロルミネッセンス装置。
- 請求項1記載のエレクトロルミネッセンス装置において、当該複数の機能部位間界面の少なくとも一つは、相分離によって形成されていることを特徴とするエレクトロルミネッセンス装置。
- 前記相分離界面が前記電極と略平行であることを特徴とする請求項2記載のエレクトロルミネッセンス装置。
- 請求項1ないし3いずれかに記載のエレクトロルミネッセンス装置において、前記無機半導体材料が微粒子であることを特徴とするエレクトロルミネッセンス装置。
- 請求項1ないし4いずれかに記載のエレクトロルミネッセンス装置において、前記無機半導体材料が化学組成の異なる少なくとも2種類から形成されていることを特徴とするエレクトロルミネッセンス装置。
- 前記無機半導体材料が、陰極に近い順に伝導バンドのエネルギーが高くなるように配列されていることを特徴とする請求項1ないし5いずれかに記載のエレクトロルミネッセンス装置。
- 請求項4ないし6いずれかに記載のエレクトロルミネッセンス装置において、前記無機半導体微粒子の少なくとも1種類がフルオロアルキルを有する有機物で被覆されていることを特徴とするエレクトロルミネッセンス装置。
- 請求7記載のエレクトロルミネッセンス装置において、前記被覆された無機半導体微粒子が陰極と接していることを特徴とするエレクトロルミネッセンス装置。
- 前記微粒子において一微粒子の中に複数種の無機半導体材料を含むことを特徴とする請求項4ないし8いずれかに記載のエレクトロルミネッセンス装置。
- 前記無機半導体材料が金属酸化物であることを特徴とする請求項1ないし9いずれかに記載のエレクトロルミネッセンス装置。
- 請求項4ないし10いずれかに記載のエレクトロルミネッセンス装置において、前記無機半導体微粒子の直径が10nm以下であることを特徴とするエレクトロルミネッセンス装置。
- 請求項4ないし11いずれかに記載のエレクトロルミネッセンス装置において、前記無機半導体微粒子の少なくとも1種類に金属錯体が共有結合により付与されていることを特徴とするエレクトロルミネッセンス装置。
- 請求項10記載のエレクトロルミネッセンス装置において、前記金属酸化物の一つが酸化ジルコニウムであることを特徴とするエレクトロルミネッセンス装置。
- 請求項1ないし13いずれかに記載のエレクトロルミネッセンス装置において、前記金属錯体の中心金属がイリジウムであることを特徴とするエレクトロルミネッセンス装置。
- 請求項1ないし14いずれかに記載のエレクトロルミネッセンス装置において、前記有機半導体材料がホール輸送性高分子であることを特徴とするエレクトロルミネッセンス装置。
- 請求項1ないし15いずれかに記載のエレクトロルミネッセンス装置において、前記有機半導体材料が複数混合されておりそれぞれが相分離界面を有することを特徴とするエレクトロルミネッセンス装置。
- 請求項1ないし16いずれかに記載のエレクトロルミネッセンス装置において、前記有機半導体材料がトリフェニルアミン骨格を有することを特徴とするエレクトロルミネッセンス装置。
- 請求項1ないし17いずれかに記載のエレクトロルミネッセンス装置を製造するエレクトロルミネッセンス装置の製造方法において、電極を除くすべて層を液相プロセスにより製膜することを特徴とするエレクトロルミネッセンス装置の製造方法。
- 請求項1ないし17いずれかに記載のエレクトロルミネッセンス装置を製造するエレクトロルミネッセンス装置の製造方法において、製膜時の気液界面近傍の雰囲気を制御することにより、相分離構造を制御することを特徴とするエレクトロルミネッセンス装置の製造方法。
- 請求項18記載のエレクトロルミネッセンス装置の製造方法において、前記液相プロセスでは、請求項1ないし17記載の有機材料、金属錯体、金属化合物の微粒子のすべてを混合した溶液を用いることを特徴とするエレクトロルミネッセンス装置の製造方法。
- 請求項1ないし17いずれかに記載のエレクトロルミネッセンス装置を含む、電子機器。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004240450A JP2006060023A (ja) | 2004-08-20 | 2004-08-20 | エレクトロルミネッセンス装置及びエレクトロルミネッセンス装置の製造方法ならびに電子機器 |
KR1020050065600A KR100662835B1 (ko) | 2004-08-20 | 2005-07-20 | 일렉트로루미네선스 장치 및 일렉트로루미네선스 장치의제조 방법 및 전자 기기 |
TW094125485A TWI287410B (en) | 2004-08-20 | 2005-07-27 | Electroluminescent device and method of fabricating the same, and electronic apparatus |
US11/197,323 US20060040135A1 (en) | 2004-08-20 | 2005-08-05 | Electroluminescent device and method of fabricating the same, and electronic apparatus |
CNB2005100914969A CN100477874C (zh) | 2004-08-20 | 2005-08-18 | 电致发光装置及其制造方法、以及电子器件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004240450A JP2006060023A (ja) | 2004-08-20 | 2004-08-20 | エレクトロルミネッセンス装置及びエレクトロルミネッセンス装置の製造方法ならびに電子機器 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2006060023A true JP2006060023A (ja) | 2006-03-02 |
Family
ID=35909964
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004240450A Pending JP2006060023A (ja) | 2004-08-20 | 2004-08-20 | エレクトロルミネッセンス装置及びエレクトロルミネッセンス装置の製造方法ならびに電子機器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20060040135A1 (ja) |
JP (1) | JP2006060023A (ja) |
KR (1) | KR100662835B1 (ja) |
CN (1) | CN100477874C (ja) |
TW (1) | TWI287410B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8138075B1 (en) | 2006-02-06 | 2012-03-20 | Eberlein Dietmar C | Systems and methods for the manufacture of flat panel devices |
EP2077698B1 (en) * | 2007-05-31 | 2011-09-07 | Panasonic Corporation | Organic el device and method for manufacturing the same |
KR20130049312A (ko) * | 2011-11-04 | 2013-05-14 | 주식회사 동진쎄미켐 | 발광소자 |
US9349988B2 (en) | 2012-11-20 | 2016-05-24 | Samsung Display Co., Ltd. | Organic light emitting display device |
KR101410102B1 (ko) * | 2012-11-20 | 2014-06-27 | 삼성디스플레이 주식회사 | 유기발광 표시장치 |
US9692010B2 (en) | 2012-11-20 | 2017-06-27 | Samsung Display Co., Ltd. | Organic light emitting display device |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19625993A1 (de) * | 1996-06-28 | 1998-01-02 | Philips Patentverwaltung | Organisches elektrolumineszentes Bauteil mit Ladungstransportschicht |
US5958573A (en) * | 1997-02-10 | 1999-09-28 | Quantum Energy Technologies | Electroluminescent device having a structured particle electron conductor |
US6821645B2 (en) * | 1999-12-27 | 2004-11-23 | Fuji Photo Film Co., Ltd. | Light-emitting material comprising orthometalated iridium complex, light-emitting device, high efficiency red light-emitting device, and novel iridium complex |
US6565994B2 (en) * | 2000-02-10 | 2003-05-20 | Fuji Photo Film Co., Ltd. | Light emitting device material comprising iridium complex and light emitting device using same material |
US6515314B1 (en) * | 2000-11-16 | 2003-02-04 | General Electric Company | Light-emitting device with organic layer doped with photoluminescent material |
KR100533556B1 (ko) * | 2000-11-30 | 2005-12-06 | 캐논 가부시끼가이샤 | 발광 소자 및 표시 장치 |
JP2003142262A (ja) * | 2001-11-06 | 2003-05-16 | Seiko Epson Corp | 電気光学装置、膜状部材、積層膜、低屈折率膜、多層積層膜、電子機器 |
JP2004172090A (ja) * | 2002-10-31 | 2004-06-17 | Seiko Epson Corp | エレクトロルミネッセンス装置の製造方法及びエレクトロルミネッセンス装置、並びに電子機器 |
US20050154086A1 (en) * | 2003-12-26 | 2005-07-14 | Fuji Photo Film Co., Ltd. | Fine inorganic oxide dispersion, coating composition, optical film, antireflection film, polarizing plate, and image display device |
-
2004
- 2004-08-20 JP JP2004240450A patent/JP2006060023A/ja active Pending
-
2005
- 2005-07-20 KR KR1020050065600A patent/KR100662835B1/ko not_active IP Right Cessation
- 2005-07-27 TW TW094125485A patent/TWI287410B/zh not_active IP Right Cessation
- 2005-08-05 US US11/197,323 patent/US20060040135A1/en not_active Abandoned
- 2005-08-18 CN CNB2005100914969A patent/CN100477874C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TW200610432A (en) | 2006-03-16 |
CN1738503A (zh) | 2006-02-22 |
KR100662835B1 (ko) | 2006-12-28 |
CN100477874C (zh) | 2009-04-08 |
US20060040135A1 (en) | 2006-02-23 |
TWI287410B (en) | 2007-09-21 |
KR20060053916A (ko) | 2006-05-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4857688B2 (ja) | 表示装置及びその製造方法 | |
TWI338186B (ja) | ||
TWI301605B (en) | Electro-optical device, manufacturing method therefor, circuit board, manufacturing method therefor, and electronic equipment | |
TWI290805B (en) | Film member, electro-optical device and electronic appliances | |
JP4647708B2 (ja) | 有機elデバイスおよびその製造方法 | |
JP4692415B2 (ja) | エレクトロルミネッセンス素子の製造方法 | |
JP2008041747A (ja) | 有機エレクトロルミネッセント発光装置およびその製造方法 | |
JP3912393B2 (ja) | 有機エレクトロルミネッセンス装置の製造方法 | |
KR100692461B1 (ko) | 유기 일렉트로루미네선스 장치, 유기 일렉트로루미네선스장치의 제조 방법 및 전자 기기 | |
JP2006114480A (ja) | 有機電界発光表示装置及びその製造方法 | |
JP2007335737A (ja) | 有機エレクトロルミネッセント素子およびその製造方法 | |
JP2005085604A (ja) | 有機金属化合物の薄膜形成方法、有機金属化合物薄膜、およびこれを備えた有機電子デバイスの製造方法、有機電子デバイス、有機エレクトロルミネッセンスの製造方法、有機エレクトロルミネッセンス、及び電子機器 | |
KR100662835B1 (ko) | 일렉트로루미네선스 장치 및 일렉트로루미네선스 장치의제조 방법 및 전자 기기 | |
JP2008041692A (ja) | 有機エレクトロルミネッセント素子およびその製造方法 | |
US7449252B2 (en) | Organic electroluminescent device, manufacturing method thereof, and electronic apparatus | |
JP2010034342A (ja) | 半導体素子の製造方法、半導体素子、発光装置、表示装置および駆動用基板 | |
TW200522793A (en) | Organic electroluminescent device, method of manufacturing the same, and electronic apparatus | |
JP5217564B2 (ja) | 発光装置の製造方法 | |
KR20220045202A (ko) | 보조 전극 및 파티션을 포함하는 광전자 디바이스 | |
JP2007184290A (ja) | 膜状部材の製造方法及び電気光学装置の製造方法 | |
JP2005079064A (ja) | 有機el装置、有機el装置の製造方法および電子機器 | |
JP2005056757A (ja) | 有機エレクトロルミネッセンス装置の製造方法、有機エレクトロルミネッセンス装置、電子機器 | |
JP2005267967A (ja) | 積層体およびその製造方法、有機el装置およびその製造方法、ならびに電子機器 | |
JP2005158489A (ja) | 有機el装置とその製造方法及び電子機器 | |
JP2005285592A (ja) | 積層体の製造方法、有機el装置、有機半導体装置、ならびに電子機器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20071127 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080212 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080414 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20080414 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080513 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080714 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090203 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090406 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20091208 |