JP2006043733A - Method for joining metals - Google Patents

Method for joining metals Download PDF

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JP2006043733A
JP2006043733A JP2004228366A JP2004228366A JP2006043733A JP 2006043733 A JP2006043733 A JP 2006043733A JP 2004228366 A JP2004228366 A JP 2004228366A JP 2004228366 A JP2004228366 A JP 2004228366A JP 2006043733 A JP2006043733 A JP 2006043733A
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metal
brazing material
joining
brazing
particles
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Yoshinori Murakami
善則 村上
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Nissan Motor Co Ltd
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Nissan Motor Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for joining metals with a brazing with which even in the case of developing a crack caused by stress, this crack is not extended and a connecting reliability and an electric characteristic can be kept. <P>SOLUTION: In the method for joining the metals, braze-joining the metal film 2 and the metal foil 5 by using a brazing filler metal 3, this method for joining the metals, by which even in the case of developing the crack from a joined edge part, in order to prevent this extension, the brazing filler metal 3 mixing metal particles 6a substantially no fusing with the liquid phase of the brazing filler metal at the brazing temperature and having the sharp edge line or the anglar part is used to join the metals. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、金属部材同士を鑞材により接合する金属接合方法に関する。   The present invention relates to a metal joining method for joining metal members together with a brazing material.

図９及び図１０は本発明の背景を説明する一例として引用した構造で、電極たる金属膜を貼り付けたセラミック板に半導体チップを鑞付けした状態を模式的に示したもので、図９はその平面図、図１０は半導体チップとセラミック板との鑞付け部分にクラックが発生した様子を模式的に示す断面図であり、図９中のX-X線に沿って矢印の矢じり側から見た断面図である。   FIG. 9 and FIG. 10 are structures cited as an example for explaining the background of the present invention, and schematically show a state in which a semiconductor chip is brazed to a ceramic plate to which a metal film as an electrode is attached. FIG. 10 is a cross-sectional view schematically showing a state where cracks are generated in the brazed portion between the semiconductor chip and the ceramic plate, and a cross section seen from the arrowhead side of the arrow along the line XX in FIG. FIG.

一般的に、電力用半導体チップ１の裏面には主電極としての金属膜２が形成されており、この金属膜２は、当該チップ１が配設されるセラミック板４の表面に形成された外部電極としての金属箔５に、電気的且つ物理的に接続される。この半導体チップ１裏面の金属膜２とセラミック板４上の金属箔５とを接合する技術として、例えば半田に代表されるような、濡れ性を有し比較的低融点の金属若しくはその合金から成る鑞材３が知られている（例えば、特許文献１参照）。
特開平６−６８５号公報 Generally, a metal film 2 as a main electrode is formed on the back surface of the power semiconductor chip 1, and this metal film 2 is formed on the surface of the ceramic plate 4 on which the chip 1 is disposed. It is electrically and physically connected to the metal foil 5 as an electrode. As a technique for joining the metal film 2 on the back surface of the semiconductor chip 1 and the metal foil 5 on the ceramic plate 4, for example, it is made of a metal having a relatively low melting point or an alloy thereof having wettability as represented by solder. The brazing material 3 is known (for example, refer patent document 1).
Japanese Patent Laid-Open No. 6-685

ところが、このような半導体チップ１とセラミック板４との接合部では、半導体チップ１、金属膜２、鑞材３、金属箔５、及び、セラミック板４の熱膨張係数がそれぞれ異なるので、先ず、鑞材３を金属膜２と金属箔５との間で溶融させた後に常温に戻した時点で鑞材３に応力が発生する。この応力は、半導体チップ１の周縁部、特に図９中の太線矢印で示す半導体チップ１の各角部に集中し、その結果として、当該応力集中箇所に図１０に示すようなクラック（亀裂）が生じる場合がある。さらに、半導体チップ１が動作／停止を繰り返すと、その度に構造体全体の温度が上昇／降下するので、この温度サイクルに伴って前記応力集中箇所にさらに応力が反復印加され、既にクラックが発生している場合、これが徐々に進展し、延いては接続信頼性や電気的特性の低下を招来する。   However, since the thermal expansion coefficients of the semiconductor chip 1, the metal film 2, the brazing material 3, the metal foil 5, and the ceramic plate 4 are different at the junction between the semiconductor chip 1 and the ceramic plate 4, Stress is generated in the brazing material 3 when the brazing material 3 is melted between the metal film 2 and the metal foil 5 and then returned to room temperature. This stress is concentrated at the peripheral edge of the semiconductor chip 1, particularly at each corner of the semiconductor chip 1 indicated by the thick arrow in FIG. 9, and as a result, cracks (cracks) as shown in FIG. May occur. Further, when the semiconductor chip 1 is repeatedly operated / stopped, the temperature of the entire structure increases / decreases each time, so that stress is repeatedly applied to the stress concentration location along with this temperature cycle, and a crack has already occurred. If this is the case, this gradually progresses, leading to a decrease in connection reliability and electrical characteristics.

本発明は、鑞付けによって金属部材同士の接合部に発生する応力ならびに温度変化によって反復的に印加される応力に対し、接続信頼性及び電気的特性を維持することが可能な金属接合方法を提供することを目的とする。   The present invention provides a metal joining method capable of maintaining connection reliability and electrical characteristics against stress generated in a joint between metal members by brazing and stress repeatedly applied by temperature change. The purpose is to do.

上記目的を達成するために、本発明によれば、第１の金属部材と第２の金属部材とを鑞材により接合する金属接合方法にあって、鑞付温度において前記鑞材の液相に実質的に溶融しない金属粒体を前記鑞材に混入させて前記第１の金属部材と前記第２の金属部材とを接合する金属接合方法が提供される。   In order to achieve the above object, according to the present invention, there is provided a metal joining method for joining a first metal member and a second metal member with a brazing material, wherein the liquid phase of the brazing material is changed to a brazing temperature. Provided is a metal joining method for joining the first metal member and the second metal member by mixing metal particles that do not substantially melt into the brazing material.

また、上記目的を達成するために、本発明によれば、第１の金属部材と第２の金属部材とを鑞材により接合する金属接合方法にあって、前記第１の金属部材又は前記第２の金属部材の少なくとも一方の表面に、鑞付温度において前記鑞材の液相に実質的に溶融しない金属粒体を予め付着させておく金属接合方法が提供される。   In order to achieve the above object, according to the present invention, there is provided a metal joining method for joining a first metal member and a second metal member with a brazing material, the first metal member or the first metal member. A metal joining method is provided in which metal particles that do not substantially melt in the liquid phase of the brazing material at the brazing temperature are attached in advance to at least one surface of the two metal members.

このようにすると、たとえ鑞にクラックが発生し、さらに温度サイクルが印加されたとしても、金属粒体の存在によってクラックが進展するのを防止することが出来るので、鑞付けによる金属部材同士の接合部における接続信頼性維持を図ることが可能となる。   In this way, even if a crack occurs in the heel and a temperature cycle is further applied, it is possible to prevent the crack from progressing due to the presence of the metal particles, so that joining of the metal members by brazing It is possible to maintain the connection reliability in the part.

発明の実施の形態BEST MODE FOR CARRYING OUT THE INVENTION

以下、本発明の実施形態を図面に基づいて説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings.

［第１実施形態］
図１は本発明の第１実施形態に係る金属接合方法によりセラミック板に半導体チップを接合した状態を模式的に示す断面図で、前記図１０と同様の部位である。 [First Embodiment]
FIG. 1 is a cross-sectional view schematically showing a state in which a semiconductor chip is bonded to a ceramic plate by a metal bonding method according to the first embodiment of the present invention, which is the same portion as FIG.

図中、半導体チップ１は、発熱量が大きな電力用半導体チップ等である。その底面には、当該チップ１の主電極の一つとして、ニッケル等の金属材料から構成される金属膜２が形成されている。因みに、この金属膜２は表面酸化を防ぐため、連続蒸着法により例えば金や銀等から成る金属製保護膜（不図示）により被覆されており、鑞付け時にはこの保護膜が鑞に溶出して金属膜２と鑞材３が良好に接続される。一方、セラミック板４の表面には、外部電極としての金属箔５が設けられている。この半導体チップ１の金属膜２とセラミック板４の金属箔５とを鑞付接合するための鑞材３は、例えばＡｇ−Ｃｕ系合金から構成されている。勿論、他の鑞材やＰｂ系半田でも発明の効果に変わりはない。   In the figure, a semiconductor chip 1 is a power semiconductor chip or the like that generates a large amount of heat. A metal film 2 made of a metal material such as nickel is formed on the bottom surface as one of the main electrodes of the chip 1. Incidentally, in order to prevent surface oxidation, this metal film 2 is covered with a metal protective film (not shown) made of, for example, gold or silver by a continuous vapor deposition method. The metal film 2 and the brazing material 3 are connected well. On the other hand, a metal foil 5 as an external electrode is provided on the surface of the ceramic plate 4. The brazing material 3 for brazing and joining the metal film 2 of the semiconductor chip 1 and the metal foil 5 of the ceramic plate 4 is made of, for example, an Ag—Cu alloy. Of course, other brazing materials and Pb solder do not change the effect of the invention.

本実施形態に係る金属接合方法においては、半導体チップ１の金属膜２とセラミック板４の金属箔５とを接合する際、金属粒体６ａを予め混ぜ込んだ鑞材３を、半導体チップ１の金属膜２とセラミック板４の金属箔５との間に挟んでから当該接合部を所定の鑞付温度に加熱して鑞材３を溶融させ、その後に温度を降下させて接合を完成させる。なお、鑞材の初期形態は固体板状のものでも、或いは、ペースト状のものでも良い。   In the metal bonding method according to this embodiment, when bonding the metal film 2 of the semiconductor chip 1 and the metal foil 5 of the ceramic plate 4, the brazing material 3 in which the metal particles 6 a are mixed in advance is used for the semiconductor chip 1. After being sandwiched between the metal film 2 and the metal foil 5 of the ceramic plate 4, the joint is heated to a predetermined brazing temperature to melt the brazing material 3, and then the temperature is lowered to complete the joining. The initial form of the bran may be a solid plate or a paste.

この金属粒体６ａは、鑞材３より高融点を有する例えばニッケル等の金属材料により構成されており、鑞付温度において鑞材３の液相に実質的に溶融しないようになっている。なお、鑞材３の液相に金属粒体６ａが実質的に溶融しないとは、鑞材３の液相に金属粒体６ａが全く溶融しないことの他に、鑞材３の液相に金属粒体６ａが容易に溶融し難いが若干溶融してしまうことをも許容する趣旨であり、これに該当する金属であれば同様の効果がある。   The metal particles 6a are made of a metal material such as nickel having a higher melting point than that of the brazing material 3, and are not substantially melted into the liquid phase of the brazing material 3 at the brazing temperature. The fact that the metal particles 6a are not substantially melted in the liquid phase of the brazing material 3 means that the metal particles 6a are not melted in the liquid phase of the brazing material 3 and the metal phase 6a is not melted in the liquid phase of the brazing material 3. The purpose is to allow the particles 6a to be easily melted but to be slightly melted, and a metal corresponding to this has the same effect.

また、この金属粒体６ａは、図１に示すように、鋭利な稜線若しくは角部を有する形状となっている。金属粒体６ａをこのような形状とすることにより、鑞材３と金属粒体６ａとの界面にクラックが進んだ際に、当該鋭利な稜線若しくは角部でクラックの進展を食い止め易くなっているので、鑞付けによる金属部材同士の接合部における接続信頼性の維持を図ることが可能となる。これに対し、表面が滑らかな、例えば球体形状の金属粒体６ａ’を用いると、図２に示すように、クラックが当該金属粒体６ａ’を回り込んでしまい進展を続け易くなる。   Further, as shown in FIG. 1, the metal particle body 6a has a shape having sharp ridgelines or corners. By making the metal particles 6a into such a shape, when a crack progresses to the interface between the brazing material 3 and the metal particles 6a, it is easy to prevent the crack from progressing at the sharp ridgeline or corner. Therefore, it becomes possible to maintain the connection reliability at the joint between the metal members by brazing. On the other hand, when a metal particle 6a 'having a smooth surface, for example, a spherical shape, is used, as shown in FIG.

［第２実施形態］
図３は本発明の第２実施形態に係る金属接合方法を説明するための前記図１に対応した図であり、同一符号は第１実施形態にて説明したものと同一のものを示している。 [Second Embodiment]
FIG. 3 is a view corresponding to FIG. 1 for explaining the metal joining method according to the second embodiment of the present invention, wherein the same reference numerals denote the same parts as those described in the first embodiment. .

本実施形態においては、鋭角な稜線若しくは角部を持った金属粒体６ａの代わりに、形状は任意だが、鑞材３より柔らかい例えばアルミニウム等の金属材料で構成された金属粒体６ｂが混ぜ込まれており、印加された応力に対して鑞材３より塑性変形し易くなっている。特にアルミニウムは２００℃を超えると容易に塑性変形するので金属粒体６ｂに特に好適な材料の一つである。このような性質の金属を金属粒体６ｂとして用いると、図３に示すように、クラックが進展した際に、金属粒体６ｂがクラックによって分割され当該金属粒体６ｂ自体が歪み或いは破断することで応力を吸収するので、鑞材３からはクラックの先端が消失し、クラックの進展を食い止めることが可能となっている。   In the present embodiment, instead of the metal particles 6a having sharp edges or corners, the shape is arbitrary, but the metal particles 6b made of a metal material such as aluminum softer than the brazing material 3 are mixed. It is rare, and is more easily plastically deformed than the brazing material 3 with respect to the applied stress. In particular, aluminum is one of the particularly suitable materials for the metal particles 6b because it easily plastically deforms when it exceeds 200 ° C. When a metal having such properties is used as the metal particle 6b, as shown in FIG. 3, when the crack progresses, the metal particle 6b is divided by the crack and the metal particle 6b itself is distorted or broken. Since the stress is absorbed by the crack, the tip of the crack disappears from the brazing material 3, and the progress of the crack can be stopped.

［第３実施形態］
図４は本発明の第３実施形態に係る金属接合方法を説明するための前記図１に対応した図であり、同一符号は第１実施形態にて説明したものと同一のものを示している。 [Third Embodiment]
FIG. 4 is a view corresponding to FIG. 1 for explaining the metal joining method according to the third embodiment of the present invention, wherein the same reference numerals denote the same parts as those described in the first embodiment. .

本実施形態においては、金属粒体として、例えば銅やタングステン等の導電性に優れた金属材料から成る細かな金属粒子７を押し固めて作った多孔質塊で構成されている金属粒体６ｃを用いる。この金属粒子７を構成する銅やタングステン等の金属材料は、鑞材３より高融点を有することにより、鑞付温度において鑞材３の液相に実質的に溶融しないようになっている。   In the present embodiment, as the metal particles, for example, metal particles 6c composed of porous masses formed by pressing and compacting fine metal particles 7 made of a metal material having excellent conductivity such as copper or tungsten are used. Use. The metal material such as copper and tungsten constituting the metal particles 7 has a melting point higher than that of the brazing material 3, so that it does not substantially melt into the liquid phase of the brazing material 3 at the brazing temperature.

このように金属粒体６ｃを、細かな金属粒子７から成る多孔質塊とすることにより、上述の第２実施形態のように金属粒体にアルミニウムのような柔らかい金属材料を用いなくても、金属粒体６ｃ自体を鑞材３より容易に変形可能で、これによって鑞材３からはクラックの先端が消失し、クラックの進展を食い止めることが可能となっている。さらに、銅やタングステン等の導電性に優れた金属材料で金属粒体６ｃを構成することが出来るので、鑞材３の電気的特性を向上させることが可能となる。   Thus, by making the metal particle 6c into a porous mass composed of fine metal particles 7, it is possible to use a metal material such as aluminum as in the second embodiment without using a soft metal material such as aluminum. The metal particles 6c themselves can be deformed more easily than the brazing material 3, so that the tip of the crack disappears from the brazing material 3, and the progress of the crack can be stopped. Furthermore, since the metal particles 6c can be made of a metal material having excellent conductivity such as copper or tungsten, the electrical characteristics of the brazing material 3 can be improved.

［第４実施形態］
図５は本発明の第４実施形態に係る金属接合方法を説明するための前記図１に対応した図であり、同一符号は第１実施形態にて説明したものと同一のものを示している。 [Fourth Embodiment]
FIG. 5 is a view corresponding to FIG. 1 for explaining the metal bonding method according to the fourth embodiment of the present invention, and the same reference numerals denote the same parts as those described in the first embodiment. .

本実施形態においては、金属粒体として、鑞材３より低融点の例えばＳｎ−Ｐｂ系の半田等の金属材料で構成された本体部８を、鑞材３より高融点を有する例えばニッケル等の金属材料から構成された金属製コーティング層９で被覆した金属粒体６ｄを用いる。   In the present embodiment, as the metal particles, the main body portion 8 made of a metal material such as Sn-Pb solder having a lower melting point than that of the brazing material 3 is used. A metal particle 6d covered with a metal coating layer 9 made of a metal material is used.

なお、金属粒体６ｄは、扁平形状又は板状形状とすることにより、金属粒体６ｄの溶融時の当該金属粒体６ｄの体積膨張により金属製コーティング層８が破裂するのを防止することが可能となっている。   The metal particles 6d may have a flat shape or a plate shape to prevent the metal coating layer 8 from rupturing due to the volume expansion of the metal particles 6d when the metal particles 6d are melted. It is possible.

このような構成により、温度融点が低い金属も使うことが可能となり、鑞材３は溶けないが本体部８が溶ける温度にまで上昇すると、クラックの先端が消失し、クラックの進展を食い止めることが可能となっている。   With such a configuration, it becomes possible to use a metal having a low temperature melting point, and when the temperature of the brazing material 3 does not melt but rises to a temperature at which the main body portion 8 melts, the tip of the crack disappears and the progress of the crack can be stopped. It is possible.

［第５実施形態］
図６は本発明の第５実施形態に係る金属接合方法を説明するための前記図９に対応した図であり、図９と同一符号は上述の図９で説明したものと同一のものを示している。図６中、６は前記６ａ〜６ｄの金属粒体の何れかを示す。勿論、これら金属粒体６ａ〜６ｄのうち、複数種のものを混合しても良い。破線は半導体チップ１が設置される位置を示している。 [Fifth Embodiment]
FIG. 6 is a view corresponding to FIG. 9 for explaining the metal bonding method according to the fifth embodiment of the present invention. The same reference numerals as those in FIG. 9 denote the same as those described in FIG. ing. In FIG. 6, 6 indicates any of the metal particles of 6a to 6d. Of course, you may mix multiple types of these metal particle bodies 6a-6d. A broken line indicates a position where the semiconductor chip 1 is installed.

本実施形態においては、鑞材３に金属粒体６を予め混入するのではなく、接合しようとするセラミック板４の金属箔５に、上述したような金属粒体６を実質的に均一に予め付着させておき、それから鑞材３を用いて、２つの金属部材２、５を接合させる方法をとる。このような方法をとると、効果は上述した実施形態と同様であるが、予め鑞材に細工をする必要がなく工程が簡便となり、工数低減や生産性向上に寄与し、延いてはコストダウンを図ることが可能となる。   In the present embodiment, the metal particles 6 are not mixed in the brazing material 3 in advance, but the metal particles 6 as described above are substantially uniformly distributed in advance on the metal foil 5 of the ceramic plate 4 to be joined. A method of bonding the two metal members 2 and 5 using the brazing material 3 is then taken. If such a method is taken, the effect is the same as that of the above-mentioned embodiment, but it is not necessary to craft the brazing material in advance and the process becomes simple, which contributes to the reduction of man-hours and the improvement of productivity, and the cost reduction. Can be achieved.

なお、半導体チップ１の金属膜２、又は、半導体チップ１の金属膜２及びセラミック板４の金属箔５の両方に金属粒体６ｂを予め付着させても良い。   The metal particles 6b may be attached in advance to the metal film 2 of the semiconductor chip 1 or both the metal film 2 of the semiconductor chip 1 and the metal foil 5 of the ceramic plate 4.

［第６実施形態］
図７は本発明の第６実施形態に係る金属接合方法において金属粒体を付着させる領域を説明するための前記図６に対応した平面図であり、図６と同一符号は第５実施形態にて説明したものと同一のものを示している。破線は半導体チップ１が設置される位置を示している。 [Sixth Embodiment]
FIG. 7 is a plan view corresponding to FIG. 6 for explaining the region to which the metal particles are attached in the metal joining method according to the sixth embodiment of the present invention. The same reference numerals as those in FIG. This is the same as described above. A broken line indicates a position where the semiconductor chip 1 is installed.

これまで説明してきた接合方法では、金属粒体６ａ〜６ｄが鑞材３に予め混入されていたため、金属粒体６は接合面全体に分布していた。しかしながら、このようにすると、応力があまり印加されない接合部周縁以外の部分に存在する金属粒体６の存在が、物理的な接着強度や電気特性に影響を及ぼす場合もある。そこで、このような影響を排除するため、クラックが発生しそうな接合部周縁（特に角部）のみに予め付着させておく方法をとる。   In the joining method described so far, the metal particles 6a to 6d are mixed in the brazing material 3 in advance, so that the metal particles 6 are distributed over the entire joining surface. However, in this case, the presence of the metal particles 6 present in a portion other than the periphery of the joint where stress is not applied so much may affect the physical adhesive strength and electrical characteristics. Therefore, in order to eliminate such an influence, a method of preliminarily attaching only to the periphery (particularly the corner) of the joint where cracks are likely to occur is taken.

［第７実施形態］
図８は本発明の第７実施形態を説明するための前記図１に対応した図であり、同一符号は第１実施形態にて説明したものと同一のものを示している。 [Seventh Embodiment]
FIG. 8 is a view corresponding to FIG. 1 for explaining the seventh embodiment of the present invention, and the same reference numerals denote the same parts as those described in the first embodiment.

本実施形態においては、鑞材として、鑞材金属を含有したペーストを用い、接合させたい２つの金属（例えば、図８においては金属膜２と金属箔５）の間にこの鑞材ペーストを介在させて、さらに当該ペーストが接合部から少しはみ出すように挟み込む。そして、加熱溶融させる前に、上述してきた金属粒体６を当該はみ出し部のペーストに向けて吹き付け、ペーストの粘着力のみで金属粒体６を付着させる。そして、ペーストを加熱して鑞材を溶融させると、はみ出し部に付着した金属粒体６が鑞材３内に包含される。冷却した後には、図８のように金属粒体６が、クラックの発生し易い接合部周縁のみに存在し、クラックを食い止める。この場合、接合部内には金属粒体６が存在しないので、接合強度や電気特性には全く影響せず、クラックを防止することが出来る。   In this embodiment, a paste containing brazing metal is used as the brazing material, and this brazing paste is interposed between two metals to be joined (for example, the metal film 2 and the metal foil 5 in FIG. 8). Then, the paste is further sandwiched so that it slightly protrudes from the joint. And before making it heat-melt, the metal particle 6 mentioned above is sprayed toward the paste of the said protrusion part, and the metal particle 6 is made to adhere only with the adhesive force of a paste. When the paste is heated to melt the brazing material, the metal particles 6 adhering to the protruding portion are included in the brazing material 3. After cooling, the metal particles 6 are present only at the periphery of the joint where cracks are likely to occur as shown in FIG. In this case, since the metal particles 6 do not exist in the joint, cracks can be prevented without affecting the joint strength and electrical characteristics at all.

なお、以上説明した実施形態は、本発明の理解を容易にするために記載されたものであって、本発明を限定するために記載されたものではない。したがって、上記の実施形態に開示された各要素は、本発明の技術的範囲に属する全ての設計変更や均等物をも含む趣旨である。   The embodiment described above is described for facilitating the understanding of the present invention, and is not described for limiting the present invention. Therefore, each element disclosed in the above embodiment is intended to include all design changes and equivalents belonging to the technical scope of the present invention.

本発明の第１実施形態に係る金属接合方法を説明するための、接合端部の断面図である。It is sectional drawing of the joining edge part for demonstrating the metal joining method which concerns on 1st Embodiment of this invention. 金属粒体が球体であった場合の効果を説明するための、接合端部の断面図である。It is sectional drawing of a joining end part for demonstrating the effect when a metal particle is a sphere. 本発明の第２実施形態に係る金属接合方法を説明するための、接合端部の断面図である。It is sectional drawing of the joining edge part for demonstrating the metal joining method which concerns on 2nd Embodiment of this invention. 本発明の第３実施形態に係る金属接合方法を説明するための、接合端部の断面図である。It is sectional drawing of the joining edge part for demonstrating the metal joining method which concerns on 3rd Embodiment of this invention. 本発明の第４実施形態に係る金属接合方法を説明するための、接合端部の断面図である。It is sectional drawing of the joining edge part for demonstrating the metal joining method which concerns on 4th Embodiment of this invention. 本発明の第５実施形態に係る金属接合方法を説明するための、金属表面の金属粒体の分布を説明する模式的な平面図である。It is a typical top view explaining distribution of the metal grain object on the metal surface for explaining the metal joining method concerning a 5th embodiment of the present invention. 本発明の第６実施形態に係る金属接合方法を説明するための、金属表面の金属粒体の分布を説明する模式的な平面図である。It is a typical top view explaining distribution of the metal grain object on the metal surface for explaining the metal joining method concerning a 6th embodiment of the present invention. 本発明の第７実施形態に係る金属接合方法を説明するための、接合端部の断面図である。It is sectional drawing of the joining edge part for demonstrating the metal joining method which concerns on 7th Embodiment of this invention. 一般的な金属表面に、別の矩形体金属を鑞付けした状態を示した平面図である。It is the top view which showed the state which brazed another rectangular body metal to the general metal surface. 前記図８中のX-X線に沿って紙面に垂直な面で切った断面で、２つの金属部材間の鑞付部分にクラックが発生した様子を模式的に示した断面図である。FIG. 9 is a cross-sectional view schematically showing a state in which a crack is generated in a brazed portion between two metal members in a cross section taken along a line XX in FIG. 8 and perpendicular to the paper surface.

符号の説明Explanation of symbols

１…半導体チップ
２…金属膜（第１の金属部材）
３…鑞材
４…セラミック板
５…金属箔（第２の金属部材）
６ａ〜６ｄ…金属粒体
７…金属粒子
８…本体部
９…金属製コーティング層 DESCRIPTION OF SYMBOLS 1 ... Semiconductor chip 2 ... Metal film (1st metal member)
3 ... Raw material 4 ... Ceramic plate 5 ... Metal foil (second metal member)
6a to 6d ... metal particles 7 ... metal particles 8 ... main body 9 ... metal coating layer

Claims (9)

第１の金属部材と第２の金属部材とを鑞材により接合する金属接合方法であって、
鑞付温度において前記鑞材の液相に実質的に溶融しない金属粒体を混入させた前記鑞材を用いて前記第１の金属部材と前記第２の金属部材とを接合する金属接合方法。 A metal joining method for joining a first metal member and a second metal member with a brazing material,
A metal joining method for joining the first metal member and the second metal member using the brazing material in which metal particles that are not substantially melted are mixed in the liquid phase of the brazing material at a brazing temperature. 第１の金属部材と第２の金属部材とを鑞材により接合する金属接合方法であって、
前記第１の金属部材又は前記第２の金属部材の少なくとも一方の表面に、鑞付温度において前記鑞材の液相に実質的に溶融しない金属粒体を予め付着させておく金属接合方法。 A metal joining method for joining a first metal member and a second metal member with a brazing material,
A metal joining method in which metal particles that do not substantially melt in the liquid phase of the brazing material at a brazing temperature are attached in advance to at least one surface of the first metal member or the second metal member. 前記第１の金属部材と前記第２の金属部材との接合部の周縁のみに前記金属粒体を付着させておく請求項２記載の金属接合方法。   The metal joining method according to claim 2, wherein the metal particles are attached only to a peripheral edge of a joint portion between the first metal member and the second metal member. 前記第１の金属部材と前記第２の金属部材との間に鑞材を含有したペーストを、その接合部から少しはみ出すように挟み込み、当該はみ出し部に前記金属粒体を付着させた後に、前記鑞材を加熱して溶融させ、且つ、前記付着した金属粒体を前記はみ出し部内に包含させる請求項２記載の金属接合方法。   A paste containing a brazing material is sandwiched between the first metal member and the second metal member so as to slightly protrude from the joint portion, and after the metal particles are attached to the protrusion portion, The metal joining method according to claim 2, wherein the brazing material is heated and melted, and the adhered metal particles are included in the protruding portion. 前記金属粒体は、鋭利な稜線若しくは角部を有する請求項１〜４の何れかに記載の金属接合方法。   The metal joining method according to any one of claims 1 to 4, wherein the metal particles have sharp ridges or corners. 前記金属粒体は、前記鑞材より塑性変形し易い金属材料から成る請求項１〜４の何れかに記載の金属接合方法。   The metal joining method according to claim 1, wherein the metal particles are made of a metal material that is more easily plastically deformed than the brazing material. 前記金属粒体は、複数の金属粒子を押し固めて形成された多孔質塊である請求項１〜４の何れかに記載の金属接合方法。   The metal joining method according to any one of claims 1 to 4, wherein the metal particles are a porous mass formed by pressing and solidifying a plurality of metal particles. 前記金属粒体は、
前記鑞材より低融点を持つ本体部と、
鑞付温度において前記鑞材の液相に実質的に溶融しない金属製コーティング層と、を有し、
前記本体部は、前記金属製コーティング層で被覆されている請求項１〜４の何れかに記載の金属接合方法。 The metal particles are
A main body having a lower melting point than that of the brazing material,
A metal coating layer that does not substantially melt into the liquid phase of the brazing material at a brazing temperature,
The metal bonding method according to claim 1, wherein the main body is covered with the metal coating layer. 前記金属粒体は、扁平形状又は板状形状である請求項８記載の金属接合方法。

The metal bonding method according to claim 8, wherein the metal particles have a flat shape or a plate shape.

JP2004228366A 2004-08-04 2004-08-04 Method for joining metals Pending JP2006043733A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140239467A1 (en) * 2013-02-22 2014-08-28 Toyota Jidosha Kabushiki Kaisha Semiconductor device
JP2015135956A (en) * 2013-12-19 2015-07-27 株式会社デンソー semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140239467A1 (en) * 2013-02-22 2014-08-28 Toyota Jidosha Kabushiki Kaisha Semiconductor device
JP2015135956A (en) * 2013-12-19 2015-07-27 株式会社デンソー semiconductor device

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