JP2006013219A - Chip-type electronic component and method for manufacturing the same - Google Patents
Chip-type electronic component and method for manufacturing the same Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000000034 method Methods 0.000 title abstract description 13
- 239000011521 glass Substances 0.000 claims abstract description 49
- 239000004020 conductor Substances 0.000 claims abstract description 37
- 239000000843 powder Substances 0.000 claims abstract description 36
- 239000000919 ceramic Substances 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 238000002425 crystallisation Methods 0.000 claims description 12
- 230000008025 crystallization Effects 0.000 claims description 12
- 239000011800 void material Substances 0.000 claims description 5
- 238000010304 firing Methods 0.000 claims description 2
- 238000005728 strengthening Methods 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 description 7
- 238000009413 insulation Methods 0.000 description 7
- 239000003985 ceramic capacitor Substances 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- PAZHGORSDKKUPI-UHFFFAOYSA-N lithium metasilicate Chemical compound [Li+].[Li+].[O-][Si]([O-])=O PAZHGORSDKKUPI-UHFFFAOYSA-N 0.000 description 2
- 229910052912 lithium silicate Inorganic materials 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- ZFZQOKHLXAVJIF-UHFFFAOYSA-N zinc;boric acid;dihydroxy(dioxido)silane Chemical compound [Zn+2].OB(O)O.O[Si](O)([O-])[O-] ZFZQOKHLXAVJIF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/252—Terminals the terminals being coated on the capacitive element
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- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
本発明は、チップ型電子部品およびその製法に関し、特に、積層セラミックコンデンサ、積層インダクタおよび抵抗体等、金属粉末とガラス粉末とを含む導体ペーストを塗布し、焼付けて形成される外部電極を具備するチップ型電子部品およびその製法に関する。 The present invention relates to a chip-type electronic component and a method for manufacturing the same, and particularly includes an external electrode formed by applying and baking a conductive paste containing metal powder and glass powder, such as a multilayer ceramic capacitor, a multilayer inductor, and a resistor. The present invention relates to a chip-type electronic component and a manufacturing method thereof.
一般に、積層セラミックコンデンサ、インダクタおよび抵抗体等のチップ型電子部品は、セラミック積層体と導体層とからなる電子部品本体の端部に一対の外部電極を形成した形状となっている。 In general, chip-type electronic components such as a multilayer ceramic capacitor, an inductor, and a resistor have a shape in which a pair of external electrodes is formed at the end of an electronic component main body composed of a ceramic multilayer body and a conductor layer.
このような外部電極は、通常、金属粉末とガラス粉末と有機樹脂とを含む導体ペーストを、電子部品本体の端面に塗布し焼付けて形成される。 Such external electrodes are usually formed by applying and baking a conductive paste containing metal powder, glass powder, and organic resin on the end face of the electronic component body.
ところで、上記のような外部電極形成工程においては、外部電極中に含まれるガラス粉末が焼付け時に軟化流動するために、一度に焼付け処理される多数のチップ型電子部品の外部電極同士が接触部分でくっつき合い、製造歩留まりを低下させるという問題があった。 By the way, in the external electrode formation process as described above, since the glass powder contained in the external electrode softens and flows during baking, the external electrodes of a large number of chip-type electronic components that are baked at a time are contact portions. There was a problem of sticking together and lowering the manufacturing yield.
そこで、このような外部電極形成時のくっつき不良を低減するために、ガラス粉末の種類と溶融温度に着目したものが知られている（例えば、特許文献１）。この場合、ガラス粉末として結晶化ガラスを用いた際に、外部電極の焼付け温度を、そのガラス粉末の結晶化温度と再溶融温度との間に設定することにより、ガラス成分の軟化流動を抑制して、くっつき不良を低減するというものである。
上記公報に示した方法によれば、外部電極の焼結開始温度がガラス粉末の再溶融温度よりも低く設定されているために、くっつき不良は低減できるものの、このような焼付け処理では、外部電極を構成する金属成分と電子部品本体に形成されている導体層との接合性は不十分であり、特に、薄層化された導体層を有する積層セラミックコンデンサなどにおいては容量抜けが発生するという問題があった。 According to the method shown in the above publication, since the sintering start temperature of the external electrode is set lower than the remelting temperature of the glass powder, the sticking failure can be reduced. The bonding property between the metal component constituting the conductor and the conductor layer formed on the electronic component body is insufficient, and in particular, there is a problem that capacity loss occurs in a multilayer ceramic capacitor having a thinned conductor layer. was there.
従って、本発明は、外部電極同士のくっつき不良を低減すると同時に、外部電極を構成する金属成分と電子部品本体に形成されている導体層との接合性を強固にしたチップ型電子部品を提供することを目的とする。 Therefore, the present invention provides a chip-type electronic component in which the bonding between the metal component constituting the external electrode and the conductor layer formed in the electronic component body is strengthened while reducing the sticking failure between the external electrodes. For the purpose.
本発明のチップ型電子部品は、（１）セラミック積層体の内部に導体層を有する電子部品本体の端部に、金属粉末とガラス粉末とを含む導体ペーストを塗布して、２回以上の焼付工程を経て形成され、金属成分、ガラス成分および空隙の割合が、体積比で、それぞれ８０〜８５％、１０〜１５％、０〜５％である外部電極を具備することを特徴とする。特に、上記チップ型電子部品では、（２）ガラス成分が結晶化ガラスであることが望ましい。 The chip-type electronic component of the present invention is (1) a conductor paste containing metal powder and glass powder is applied to the end of an electronic component body having a conductor layer inside a ceramic laminate, and baking is performed twice or more. It is formed through a process, and includes an external electrode in which the ratio of the metal component, the glass component, and the void is 80 to 85%, 10 to 15%, and 0 to 5%, respectively, in volume ratio. In particular, in the chip-type electronic component, it is desirable that (2) the glass component is crystallized glass.
即ち本発明によれば、外部電極の焼付けを２回以上行うことにより、外部電極同士のくっつき不良を低減し、かつ電子部品本体に形成された導体層と外部電極との接合性を高めることができる。即ち、外部電極の焼付けを一回で行おうとすると、焼付け温度をガラス成分の結晶化開始温度以上、再溶融温度以下に抑えなければならないために、焼付け温度が制限され、より高い温度が必要となる前記導体層と外部電極との接合が保たれないが、焼付け工程を二回以上行うことにより以下の改善ができる。つまり、一回目の焼付けを結晶化開始温度以上で行うことで、ガラスの結晶化を高めかつ外部電極を固くできる。これによりガラス成分の軟化流動を抑制でき、また外部電極の構造を安定化させることで、くっつき不良を抑制できる。次に、２回目以降の焼付けは、ガラス成分が結晶化し固定化されているために焼付けを高い温度で行うことができ、これにより内部電極と外部電極の接合性を向上できる。 That is, according to the present invention, the external electrodes are baked twice or more, thereby reducing the sticking failure between the external electrodes and improving the bondability between the conductor layer formed on the electronic component body and the external electrodes. it can. That is, if the external electrode is baked at a time, the baking temperature must be kept above the crystallization start temperature of the glass component and below the remelting temperature, so the baking temperature is limited and a higher temperature is required. Although the bonding between the conductor layer and the external electrode is not maintained, the following improvements can be made by performing the baking process twice or more. That is, by performing the first baking at the crystallization start temperature or higher, crystallization of the glass can be enhanced and the external electrode can be hardened. Thereby, the softening flow of the glass component can be suppressed, and the sticking failure can be suppressed by stabilizing the structure of the external electrode. Next, the second and subsequent bakings can be performed at a high temperature because the glass component is crystallized and fixed, thereby improving the bondability between the internal electrode and the external electrode.
また、こうして得られた外部電極は、金属成分、ガラス成分および空隙の割合が、体積比で、それぞれ８０〜８５％、１０〜１５％、０〜５％であり緻密化されているために、この後行うメッキ処理においてもメッキ液の浸入を防止でき、チップ型電子部品の絶縁信頼性を向上できる。特に、本発明によれば、外部電極の焼付け温度は、（３）１回目の焼付温度が、ガラス成分の結晶化開始温度よりも０〜５０℃高く、２回目以降が１５０〜２００℃高いことがより好ましく、さらには、（４）導体層の厚みが１μｍ以下であり、（５）電子部品本体のサイズは１ｍｍ３以下であることがさらに望ましい。 Moreover, since the external electrode obtained in this way has a metal component, a glass component, and a void ratio of 80 to 85%, 10 to 15%, and 0 to 5% in volume ratio, respectively, In the subsequent plating process, the infiltration of the plating solution can be prevented, and the insulation reliability of the chip-type electronic component can be improved. Particularly, according to the present invention, the baking temperature of the external electrode is (3) the first baking temperature is 0 to 50 ° C. higher than the crystallization start temperature of the glass component, and the second and subsequent times are 150 to 200 ° C. higher. More preferably, (4) the thickness of the conductor layer is 1 μm or less, and (5) the size of the electronic component body is further preferably 1 mm 3 or less.
そして、本発明のチップ型電子部品の製法は、（６）グリーンシート上に内部導体パターンとを複数積層した電子部品本体成形体を形成し、焼成して端面に導体層が露出した電子部品本体を形成する工程と、該電子部品本体の前記導体層が露出した端部に、金属粉末とガラス粉末とを含む導体ペーストを塗布して、２回以上の熱処理を行い外部電極を形成する工程と、を具備することを特徴とし、（７）２回以上の焼付け工程において、後の焼付け温度が前の焼付け温度より高いことが望ましい。こうして外部電極に含まれるガラス成分の焼結および金属成分の焼結性を容易に高めることができる。 And the manufacturing method of the chip-type electronic component of the present invention is as follows: (6) An electronic component main body in which a plurality of internal conductor patterns are laminated on a green sheet and then fired to expose the conductor layer on the end face And a step of applying a conductive paste containing metal powder and glass powder to the exposed end of the conductive layer of the electronic component main body, and forming an external electrode by performing heat treatment twice or more. (7) In two or more baking processes, it is desirable that the subsequent baking temperature is higher than the previous baking temperature. Thus, the sintering of the glass component and the sinterability of the metal component contained in the external electrode can be easily enhanced.
本発明のチップ型電子部品について積層セラミックコンデンサを例として詳細に説明する。図１は本発明のチップ型電子部品を示す断面図である。 The chip-type electronic component of the present invention will be described in detail by taking a multilayer ceramic capacitor as an example. FIG. 1 is a sectional view showing a chip-type electronic component of the present invention.
本発明のチップ型電子部品は、電子部品本体１の端部に一対の外部電極３が形成されている。電子部品本体１は、セラミック層１ａが複数積層されたセラミック積層体１ｂの内部の前記セラミック層１ａ間に導体層１ｃを挟持するように配置されるとともに、その導体層１ｃはセラミック積層体１ｂの端部に露出するように形成されている。
In the chip-type electronic component of the present invention, a pair of
ここで本発明にかかる外部電極３は、金属粉末とガラス粉末とを含む導体ペーストを塗布して、２回以上の焼付工程を経て形成されることを特徴とするものであり、金属成分、ガラス成分および空隙の割合が、体積比で、それぞれ８０〜８５％、１０〜１５％、０〜５％であることが重要である。
Here, the
導体ペーストに含まれる金属粉末は、Ａｇ、Ａｇ／Ｐｄ、Ｃｕ、Ｃｕ／Ｎｉの群から選ばれる少なくとも１種が好ましく、一方、ガラス粉末は、ホウ珪酸ガラス、ホウ珪酸亜鉛ガラス、リチウム珪酸ガラス、希土類添加ガラス、チタン添加ガラスの群から選ばれる少なくと１種が好ましい。なお、導体層を構成する金属成分は、外部電極に合わせて上記金属粉末の中から卑金属もしくは貴金属を選択することが好ましい。そして、金属粉末の焼結開始温度がガラス粉末の結晶化開始温度より高く、かつ前記結晶化ガラスの再溶融温度よりも低いことが望ましい。 The metal powder contained in the conductor paste is preferably at least one selected from the group of Ag, Ag / Pd, Cu, and Cu / Ni, while the glass powder is borosilicate glass, zinc borosilicate glass, lithium silicate glass, At least one selected from the group of rare earth-added glass and titanium-added glass is preferred. In addition, it is preferable that the metal component which comprises a conductor layer selects a base metal or a noble metal from the said metal powder according to an external electrode. It is desirable that the sintering start temperature of the metal powder is higher than the crystallization start temperature of the glass powder and lower than the remelting temperature of the crystallized glass.
前記金属粉末の焼結開始温度は７００〜７５０℃、前記ガラス粉末の結晶化温度は６００〜７００℃、再溶融温度は７５０〜９００℃であることが望ましく、このため、本発明にかかる外部電極の焼付け温度は、ガラス成分の結晶化開始温度に対し、１回目の焼付温度が、ガラス成分の結晶化開始温度よりも０〜５０℃高く、２回目以降が１５０〜２００℃高いことがより好ましい。 The sintering start temperature of the metal powder is preferably 700 to 750 ° C., the crystallization temperature of the glass powder is preferably 600 to 700 ° C., and the remelting temperature is preferably 750 to 900 ° C. Therefore, the external electrode according to the present invention is used. As for the baking temperature of the glass component, it is more preferable that the first baking temperature is 0 to 50 ° C. higher than the crystallization starting temperature of the glass component and the second and subsequent times are 150 to 200 ° C. higher than the crystallization starting temperature of the glass component. .
そして、くっつき不良を低減でき、かつ導体層１ｃとの接合も強固にできる外部電極３を具備する本発明にかかるチップ型電子部品によれば、（４）導体層の厚みが１μｍ以下であるような極めて薄層化した導体層１ｃを有する電子部品本体１や、この電子部品本体１の面積に対して外部電極３の占める面積の比率が特に高くなるとされる、電子部品本体のサイズが１ｍｍ３以下の電子部品本体に対して特に有効である。この場合、セラミック層１ａの厚みは高容量化という点で３μｍ以下、特に２μｍ以下がより好ましい。
According to the chip-type electronic component according to the present invention including the
これに対して外部電極３を１回の焼付工程により形成する場合には、金属粉末の焼結開始温度をガラス粉末の結晶化開始温度より高く、かつ前記結晶化ガラスの再溶融温度よりも低くしたとしても外部電極３と電子部品本体１中の導体層１ｃとの接合が弱くなり容量抜けが多くなり、また、金属成分、ガラス成分および空隙の割合が、上記本発明の範囲からはずれる場合には、外部電極３が緻密化せずメッキ時にメッキ液が浸入して絶縁不良となる恐れがある。
On the other hand, when the
本発明にかかる試料として積層セラミックコンデンサを作製した。先ず、焼成後にセラミック層となる厚み３μｍのグリーンシートを作製した。このグリーンシートは、例えば、ＢａＴｉＯ３原料粉末に対して、副成分としてＳｉ，Ｌｉおよびアルカリ土類金属を含むガラス粉末を混合したものである。 A multilayer ceramic capacitor was produced as a sample according to the present invention. First, a green sheet having a thickness of 3 μm, which becomes a ceramic layer after firing, was produced. For example, the green sheet is obtained by mixing glass powder containing Si, Li, and an alkaline earth metal as subcomponents with a BaTiO 3 raw material powder.
次に、このグリーンシート上に、Ｎｉ粉末と有機樹脂とからなる内部導体ペーストを用いてスクリーン印刷した。その際、内部導体の有効面積は０．４０ｍｍ２とした。次に、この内部導体ペーストを印刷したグリーンシートを１００枚積層し、さらにその上下面に、内部導体ペーストを印刷していないグリーンシートをそれぞれ２０枚積層し、ホットプレスして一体化し、所定寸法に切断してコンデンサ本体成形体を作製した。 Next, screen printing was performed on the green sheet using an internal conductor paste made of Ni powder and an organic resin. At that time, the effective area of the inner conductor was set to 0.40 mm 2 . Next, 100 green sheets printed with the internal conductor paste are stacked, and 20 green sheets not printed with the internal conductor paste are stacked on the upper and lower surfaces of the green sheets and integrated by hot pressing, with predetermined dimensions. The capacitor main body molded body was produced by cutting into pieces.
次に、このコンデンサ本体成形体を大気中で４００℃にて脱脂処理を行い、その後、１２５０℃（酸素分圧１０−１１ａｔｍ）で２時間焼成し、続いて大気雰囲気中１０００℃で再酸化処理をして焼成体であるコンデンサ本体を作製した。こうしてサイズが１ｍｍ３、または１．５ｍｍ３、導体層厚みが１μｍまたは１．５μｍのコンデンサ本体を得た。 Next, the capacitor body molded body is degreased at 400 ° C. in the atmosphere, then fired at 1250 ° C. (oxygen partial pressure 10 −11 atm) for 2 hours, and then reoxidized at 1000 ° C. in the air atmosphere. The capacitor body, which was a fired body, was prepared by processing. Thus, a capacitor body having a size of 1 mm 3 or 1.5 mm 3 and a conductor layer thickness of 1 μm or 1.5 μm was obtained.
外部電極用の導体ペーストは、金属粉末として平均粒径が１μｍのＣｕ粉末（焼結開始温度が７２０℃）を用い、また、ガラス粉末として結晶性のリチウム珪酸ガラスおよび非結晶性のチタン添加ガラスを用い、これらの混合粉末１００質量部に対して有機樹脂（溶剤を含む）を２５質量部添加して調製した。 The conductor paste for the external electrode uses Cu powder having an average particle diameter of 1 μm (sintering start temperature: 720 ° C.) as the metal powder, and crystalline lithium silicate glass and non-crystalline titanium-added glass as the glass powder. And 25 parts by mass of an organic resin (including a solvent) was added to 100 parts by mass of these mixed powders.
次に、外部電極を形成するために、まず焼成したコンデンサ本体をバレル研磨した後、このコンデンサ本体の両端部に前記導体ペーストを塗布し、焼付け処理を行った。ガラスの結晶化開始温度は６５０℃であった。 Next, in order to form an external electrode, the fired capacitor body was first barrel-polished, and then the conductor paste was applied to both ends of the capacitor body, followed by baking treatment. The crystallization onset temperature of the glass was 650 ° C.
そして、窒素中において１回目の焼付けを表1に示すように６５０〜７００℃で行い、２回目の焼付けを８００〜８５０℃で行い、電子部品本体の端部に本発明の外部電極を形成した。焼付け処理する数量は１回分を１０，０００個とし、焼付け後に外部電極同士が接合されたものをくっつき不良としてその割合を評価した。また外部電極表面のガラス浮きも実体顕微鏡を用いて観察した。ガラス浮きは０．２μｍ以下を良とした。その後、不良でないものを選別し、その外部電極上に順にＮｉメッキ層およびＳｎメッキ層を順に施した。 Then, the first baking in nitrogen was performed at 650 to 700 ° C. as shown in Table 1, the second baking was performed at 800 to 850 ° C., and the external electrode of the present invention was formed at the end of the electronic component body. . The quantity to be baked was set to 10,000 per batch, and the ratio of the bonded external electrodes after baking was evaluated as sticking failure. The glass float on the external electrode surface was also observed using a stereomicroscope. The glass float was determined to be 0.2 μm or less. Thereafter, non-defective ones were selected, and Ni plating layer and Sn plating layer were sequentially applied on the external electrodes.
次に、これらの積層セラミックコンデンサ各１００個の静電容量（Ｃ）、誘電損失および絶縁抵抗（Ｒ）を測定した。測定は、基準温度２５℃で行い、静電容量は、周波数１．０ｋＨｚ、入力信号レベル０．５Ｖｒｍｓの条件で測定し容量抜けを評価した。絶縁抵抗は１０Ｖ、１分の条件にて測定し、１０８Ω以下を不良とした。
表１の結果から明らかなように、本発明によれば、２回以上の焼付け工程を施し、外部電極の金属成分、ガラス成分、および空隙の割合がいずれも８０〜８５％、１０〜１５％、０〜５％とした試料では、くっつき不良は１％以下、容量抜けが０．１％、絶縁抵抗不良も１％以下であった。さらには、導体層厚みが１μｍ以下であり、コンデンサ本体のサイズが１ｍｍ３以下であっても、くっつき不良は１％以下、容量抜けが０．１％、絶縁抵抗不良も１％以下に維持できた。 As is clear from the results in Table 1, according to the present invention, the baking process is performed twice or more, and the ratio of the metal component, the glass component, and the voids of the external electrode is 80 to 85%, 10 to 15%. In the sample of 0 to 5%, the sticking failure was 1% or less, the capacity loss was 0.1%, and the insulation resistance failure was 1% or less. Furthermore, even when the conductor layer thickness is 1 μm or less and the size of the capacitor body is 1 mm 3 or less, the sticking failure can be maintained at 1% or less, the capacity loss is 0.1%, and the insulation resistance failure can be maintained at 1% or less. It was.
これに対して、本発明外の試料として外部電極を１回の焼付工程により形成した場合、あるいは外部電極の金属成分、ガラス成分、空隙の割合が本発明の範囲外であった試料では、いずれかの試料で特性が劣り、最高値で、くっつき不良率が１．２％、容量抜け不良率が２．２％、絶縁抵抗不良率が７．７％であった。 On the other hand, when the external electrode is formed by a single baking process as a sample outside the present invention, or in a sample in which the ratio of the metal component, glass component, and void of the external electrode is outside the scope of the present invention, The characteristics of these samples were inferior, and at the highest value, the sticking failure rate was 1.2%, the capacity loss failure rate was 2.2%, and the insulation resistance failure rate was 7.7%.
１ 電子部品本体
１ａ セラミック層
１ｂ セラミック積層体
１ｃ 導体層
３ 外部電極
DESCRIPTION OF SYMBOLS 1 Electronic component
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