JP2006012916A5 - - Google Patents

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Publication number
JP2006012916A5
JP2006012916A5 JP2004184028A JP2004184028A JP2006012916A5 JP 2006012916 A5 JP2006012916 A5 JP 2006012916A5 JP 2004184028 A JP2004184028 A JP 2004184028A JP 2004184028 A JP2004184028 A JP 2004184028A JP 2006012916 A5 JP2006012916 A5 JP 2006012916A5
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JP
Japan
Prior art keywords
electrode
light emitting
emitting device
layer
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2004184028A
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Japanese (ja)
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JP2006012916A (en
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Application filed filed Critical
Priority to JP2004184028A priority Critical patent/JP2006012916A/en
Priority claimed from JP2004184028A external-priority patent/JP2006012916A/en
Priority to US11/157,174 priority patent/US20060001035A1/en
Publication of JP2006012916A publication Critical patent/JP2006012916A/en
Publication of JP2006012916A5 publication Critical patent/JP2006012916A5/ja
Withdrawn legal-status Critical Current

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Claims (7)

発光層を含む半導体層と、前記発光層に給電する前記発光層に対応した第１の電極および前記第１の電極の対極として設けられる第２の電極とを前記半導体層の実装側に有した発光素子において、
第２の電極は、細線で形成され、
前記発光素子の電極形成面を覆うように形成された絶縁層を介して、外部回路と接続される端子部を前記絶縁層の表面に有することを特徴とする発光素子。 A semiconductor layer including a light emitting layer, a first electrode corresponding to the light emitting layer that supplies power to the light emitting layer, and a second electrode provided as a counter electrode of the first electrode are provided on the mounting side of the semiconductor layer. In the light emitting element,
The second electrode is formed of a thin line,
A light-emitting element having a terminal portion connected to an external circuit on a surface of the insulating layer through an insulating layer formed to cover an electrode formation surface of the light-emitting element. 前記細線は、幅が５０μｍ以下で形成されていることを特徴とする請求項１に記載の発光素子。   The light emitting device according to claim 1, wherein the thin line has a width of 50 μm or less. 前記端子部は、幅が１００μｍ以上で形成されていることを特徴とする請求項１に記載の発光素子。   The light emitting device according to claim 1, wherein the terminal portion has a width of 100 μm or more. 前記第１の電極は、発光素子面積に対し、６０％以上を占めるように形成されていることを特徴とする請求項１に記載の発光素子。 The first electrode, to the light emitting element area emitting device according to claim 1, characterized in that it is formed so as to occupy 60% or more. 前記発光層は、発光素子の中心軸に対し、互いに直交するそれぞれの軸に対し、略対称な形状であることを特徴とする請求項１から４のいずれか１項に記載の発光素子。 The EML with respect to the center axis of the light emitting element, for each of axes perpendicular to each other, the light emitting device according to claim 1, any one of 4, which is substantially symmetrical. 発光層を含む半導体層と、前記第１の電極に、前記第２の電極が挿入されていることを特徴とする請求項１から５のいずれか１項に記載の発光素子。 A semiconductor layer including a light emitting layer, wherein the first electrode, the light emitting device according to claim 1, any one of 5 the second electrode, characterized in that it is inserted. 前記半導体層はＧａＮ系であり、前記第１の電極はｐ型電極、前記第２の電極はｎ型電極であることを特徴とする請求項１から６のいずれか１項に記載の発光素子。 The light emitting device according to any one of claims 1 to 6, wherein the semiconductor layer is a GaN-based material, the first electrode is a p-type electrode, and the second electrode is an n-type electrode. .
JP2004184028A 2004-06-22 2004-06-22 Light emitting device Withdrawn JP2006012916A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004184028A JP2006012916A (en) 2004-06-22 2004-06-22 Light emitting device
US11/157,174 US20060001035A1 (en) 2004-06-22 2005-06-21 Light emitting element and method of making same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004184028A JP2006012916A (en) 2004-06-22 2004-06-22 Light emitting device

Publications (2)

Publication Number Publication Date
JP2006012916A JP2006012916A (en) 2006-01-12
JP2006012916A5 true JP2006012916A5 (en) 2006-11-02

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Family Applications (1)

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JP2004184028A Withdrawn JP2006012916A (en) 2004-06-22 2004-06-22 Light emitting device

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Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8294166B2 (en) 2006-12-11 2012-10-23 The Regents Of The University Of California Transparent light emitting diodes
JP4823866B2 (en) * 2006-11-13 2011-11-24 株式会社小糸製作所 Light emitting module for vehicular lamp
JP2008130799A (en) * 2006-11-21 2008-06-05 Sharp Corp Semiconductor light-emitting element and method for manufacturing semiconductor light-emitting element
JP5012187B2 (en) * 2007-05-09 2012-08-29 豊田合成株式会社 Light emitting device
JP5223102B2 (en) 2007-08-08 2013-06-26 豊田合成株式会社 Flip chip type light emitting device
JP2009054688A (en) * 2007-08-24 2009-03-12 Kyocera Corp Light emitting element
KR101654340B1 (en) * 2009-12-28 2016-09-06 서울바이오시스 주식회사 A light emitting diode
JP5737066B2 (en) 2010-08-26 2015-06-17 日亜化学工業株式会社 Semiconductor light emitting device
EP2605295A3 (en) 2011-12-13 2015-11-11 LG Innotek Co., Ltd. Ultraviolet light emitting device
US20150021626A1 (en) * 2012-04-27 2015-01-22 Panasonic Corporation Light-emitting device
CN104756267A (en) * 2012-10-25 2015-07-01 松下知识产权经营株式会社 Light emitting device, method for manufacturing same, and body having light emitting device mounted thereon
DE112013005849T5 (en) * 2012-12-06 2015-08-20 Seoul Viosys Co., Ltd. Light emitting diode and application for it
JP2015028984A (en) 2013-07-30 2015-02-12 日亜化学工業株式会社 Semiconductor light emitting element
JP6514438B2 (en) * 2014-03-26 2019-05-15 旭化成エレクトロニクス株式会社 Infrared light emitting element
US20150364651A1 (en) * 2014-06-12 2015-12-17 Toshiba Corporation Flip-Chip Light Emitting Diode Assembly With Relief Channel
JP6927970B2 (en) * 2015-11-20 2021-09-01 ルミレッズ ホールディング ベーフェー Die bond pad design that allows for different electrical configurations
CN116314526A (en) * 2015-12-02 2023-06-23 亮锐控股有限公司 LED metal pad configuration for optimized thermal resistance, solder reliability and SMT process yield
KR102617466B1 (en) * 2016-07-18 2023-12-26 주식회사 루멘스 Micro led array display apparatus
JP6942589B2 (en) * 2017-09-27 2021-09-29 旭化成株式会社 Semiconductor light emitting device and ultraviolet light emitting module
CN114551679B (en) * 2022-02-18 2023-09-15 聚灿光电科技（宿迁）有限公司 Novel LED chip manufacturing method

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