JP2005531156A - N及びp型クラスターイオン及び陰イオンの注入によるcmos素子の製造方法 - Google Patents
N及びp型クラスターイオン及び陰イオンの注入によるcmos素子の製造方法 Download PDFInfo
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- 150000002500 ions Chemical class 0.000 title claims abstract description 212
- 229910052698 phosphorus Inorganic materials 0.000 title claims abstract description 18
- 238000002513 implantation Methods 0.000 title abstract description 57
- 238000004519 manufacturing process Methods 0.000 title abstract description 35
- 229910052757 nitrogen Inorganic materials 0.000 title abstract description 8
- 150000001450 anions Chemical class 0.000 title description 24
- 239000002019 doping agent Substances 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims description 76
- 239000000463 material Substances 0.000 claims description 20
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 13
- 239000011574 phosphorus Substances 0.000 claims description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 9
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 72
- 238000010884 ion-beam technique Methods 0.000 abstract description 61
- 238000005468 ion implantation Methods 0.000 abstract description 58
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- 238000005389 semiconductor device fabrication Methods 0.000 abstract description 3
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- 229910052710 silicon Inorganic materials 0.000 description 14
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- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
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Abstract
【解決手段】 半導体素子製造に対する半導体基板内へのクラスターイオンの注入のためのイオン注入システム(10)、及びCMOS素子内のトランジスタを形成するためにN及びP型ドーパントのクラスターが注入される半導体素子を製造する方法。例えば、注入中に、As4Hx +クラスターとB10Hx又はB10Hx +クラスターとは、それぞれAs及びBドーパントの供給源として使用される。イオン注入システム(10)は、半導体素子製造のための半導体基板内へのクラスターイオンの注入に関して説明される。
Description
本出願は、いずれも2002年6月26日出願の米国特許仮出願出願番号第60/392,271号及び第60/391,847号に対する優先権及びその恩典を請求する。本特許出願はまた、2002年9月16日出願の本出願人所有で現在特許出願中の米国特許出願出願番号第10/244,617号及び2002年9月20日出願の米国特許出願出願番号第10/251,491号に対する優先権を請求する。
Jmax=1.72(Q/A)1/2V3/2d-2 (1)
ただし、JmaxはmA/cm2単位であり、Qはイオン電荷状態、AはAMU単位によるイオン質量、VはkV単位による抽出電圧、dはcm単位による間隙幅である。図1は、d=1.27cmの75As+の場合の式(1)のグラフである。実際には、多くのイオン注入装置によって使用される抽出光学素子をこの限界値に接近させることができる。式(1)の延長により、以下のメリット数Δを定義し、単原子注入に対するクラスターイオン注入に関する処理量又は注入線量率の増加を定量化することができる。
Δ=n(Un/U1)3/2(mn/m1)-1/2 (2)
Δ=n2 (3)
E=|qV| (4)
ただし、Vはソース電位であり、qは電荷/イオンである。Vがボルトで表され、qが電荷の単位で表される時、Eは、電子ボルト(eV)の単位を有する。
R=(2mU)1/2/qB (5)
ただし、Rは曲げ半径、Bは磁束密度、mはイオン質量、Uはイオン運動エネルギ、qはイオン電荷状態である。
B=2I/π2ε2(μA−mm-2−mrad-2) (6)
ただし、Iは、マイクロアンペア単位での有効ドーパントビーム電流であり、εは、2乗で表されたビーム放射率(ミリラジアン−ミリメートル)である。放射率は、以下によって計算される。
ε=δa (7)
ただし、δは分散面でのビーム半幅、aは半ペンシル角であり、いずれも画像平面、すなわち分解開口位置で測定される。
12 ビーム形成領域
28 気化器
36 取り付けフランジ
44 イオン化チャンバ
71a、71b 電子ビーム入口開口
70a、70b 電子ビーム
Claims (27)
- (a)N型クラスターイオンを第1の分子種から生成する段階と、
(b)P型クラスターイオンを第2の分子種から生成する段階と、
(c)前記N型クラスターイオンを基板上の第1の領域内に注入する段階と、
(d)前記P型クラスターイオンを前記基板上の第2の領域内に注入する段階と、
を含むことを特徴とする、ドーパント材料を基板内に注入する方法。 - 段階(a)は、アルシン(AsH3)ガスから前記N型クラスターイオンを生成する段階を含むことを特徴とする請求項1に記載の方法。
- 段階(a)は、元素状態ヒ素蒸気Asから前記N型クラスターイオンを生成する段階を含むことを特徴とする請求項1に記載の方法。
- 段階(a)は、As4 +クラスターイオンを生成する段階を含むことを特徴とする請求項2に記載の方法。
- 段階(a)は、As4 +クラスターイオンを生成する段階を含むことを特徴とする請求項3に記載の方法。
- 段階(a)は、As3 +クラスターイオンを生成する段階を含むことを特徴とする請求項2に記載の方法。
- 段階(a)は、As3 +クラスターイオンを生成する段階を含むことを特徴とする請求項3に記載の方法。
- 段階(a)は、As2 +クラスターイオンを生成する段階を含むことを特徴とする請求項2に記載の方法。
- 段階(a)は、As2 +クラスターイオンを生成する段階を含むことを特徴とする請求項3に記載の方法。
- 段階(a)は、As4Hx +(式中、xは整数で1≦x≦6である。)クラスターイオンを生成する段階を含むことを特徴とする請求項2に記載の方法。
- 段階(a)は、As3Hx +(式中、xは整数で1≦x≦5である。)クラスターイオンを生成する段階を含むことを特徴とする請求項2に記載の方法。
- 段階(a)は、As2Hx +(式中、xは整数で1≦x≦4である。)クラスターイオンを生成する段階を含むことを特徴とする請求項2に記載の方法。
- 段階(a)は、ホスフィン(PH3)ガスから前記N型クラスターイオンを生成する段階を含むことを特徴とする請求項1に記載の方法。
- 段階(a)は、元素状態燐蒸気Pから前記N型クラスターイオンを生成する段階を含むことを特徴とする請求項1に記載の方法。
- 段階(a)は、P4 +クラスターイオンを生成する段階を含むことを特徴とする請求項13に記載の方法。
- 段階(a)は、P4 +クラスターイオンを生成する段階を含むことを特徴とする請求項14に記載の方法。
- 段階(a)は、P3 +クラスターイオンを生成する段階を含むことを特徴とする請求項13に記載の方法。
- 段階(a)は、P3 +クラスターイオンを生成する段階を含むことを特徴とする請求項14に記載の方法。
- 段階(a)は、P2 +クラスターイオンを生成する段階を含むことを特徴とする請求項13に記載の方法。
- 段階(a)は、P2 +クラスターイオンを生成する段階を含むことを特徴とする請求項14に記載の方法。
- 段階(a)は、P4Hx +(式中、xは整数で1≦x≦6である。)クラスターイオンを生成する段階を含むことを特徴とする請求項13に記載の方法。
- 段階(a)は、P3Hx +(式中、xは整数で1≦x≦5である。)クラスターイオンを生成する段階を含むことを特徴とする請求項13に記載の方法。
- 段階(a)は、P2Hx +(式中、xは整数で1≦x≦4である。)クラスターイオンを生成する段階を含むことを特徴とする請求項13に記載の方法。
- 段階(b)は、デカボラン(B10H14)ガスから前記クラスターイオンを生成する段階を含むことを特徴とする請求項1に記載の方法。
- 段階(b)は、n及びxが整数で2≦n≦10及び0≦x≦14の場合に、BnHx +クラスターイオンを生成する段階を含むことを特徴とする請求項24に記載の方法。
- 段階(b)は、B10Hx+(式中、xは整数で1≦x≦14である。)クラスターイオンを生成する段階を含むことを特徴とする請求項25に記載の方法。
- 段階(b)は、負のB10Hx -(式中、xは整数で1≦x≦14である。)クラスターイオンを生成する段階を含むことを特徴とする請求項1に記載の方法。
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US39184702P | 2002-06-26 | 2002-06-26 | |
US39227102P | 2002-06-26 | 2002-06-26 | |
US60/392,271 | 2002-06-26 | ||
US60/391,847 | 2002-06-26 | ||
US10/251,491 US20040002202A1 (en) | 2002-06-26 | 2002-09-20 | Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions |
US10/251,491 | 2002-09-20 | ||
PCT/US2003/017839 WO2004003990A1 (en) | 2002-06-26 | 2003-06-06 | Method of manufacturing cmos devices by the implantation of n- and p-type cluster ions and negative ions |
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JP2010113031A Pending JP2010232668A (ja) | 2002-06-26 | 2010-05-17 | N及びp型クラスターイオン及び陰イオンの注入によるcmos素子の製造方法 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009506580A (ja) * | 2005-08-30 | 2009-02-12 | アドバンスト テクノロジー マテリアルズ,インコーポレイテッド | 代替フッ化ホウ素前駆体を使用するホウ素イオン注入および注入のための大きな水素化ホウ素の形成 |
JP2009518869A (ja) * | 2005-12-09 | 2009-05-07 | セムイクウィップ・インコーポレーテッド | 炭素クラスターの注入により半導体デバイスを製造するためのシステムおよび方法 |
JP2010505234A (ja) * | 2006-09-29 | 2010-02-18 | アクセリス テクノロジーズ, インコーポレイテッド | イオン注入器のための改良型新規ビームラインアーキテクチャ |
JP2012500454A (ja) * | 2008-08-11 | 2012-01-05 | イオンビーム アプリケーションズ, エス.エー. | 大電流直流陽子加速器 |
JP2013243159A (ja) * | 2006-05-19 | 2013-12-05 | Axcelis Technologies Inc | 新規の改良されたイオンソース |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10597773B2 (en) * | 2017-08-22 | 2020-03-24 | Praxair Technology, Inc. | Antimony-containing materials for ion implantation |
US10535499B2 (en) * | 2017-11-03 | 2020-01-14 | Varian Semiconductor Equipment Associates, Inc. | Varied component density for thermal isolation |
US20230016122A1 (en) * | 2021-07-09 | 2023-01-19 | Applied Materials, Inc. | Method and apparatus for controlled ion implantation |
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- 2003-06-06 CN CN2010102274737A patent/CN101908473B/zh not_active Expired - Fee Related
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JP2009506580A (ja) * | 2005-08-30 | 2009-02-12 | アドバンスト テクノロジー マテリアルズ,インコーポレイテッド | 代替フッ化ホウ素前駆体を使用するホウ素イオン注入および注入のための大きな水素化ホウ素の形成 |
JP2009518869A (ja) * | 2005-12-09 | 2009-05-07 | セムイクウィップ・インコーポレーテッド | 炭素クラスターの注入により半導体デバイスを製造するためのシステムおよび方法 |
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CN101908473B (zh) | 2013-03-13 |
JP4744141B2 (ja) | 2011-08-10 |
JP2010232668A (ja) | 2010-10-14 |
TWI334196B (en) | 2010-12-01 |
CN101908473A (zh) | 2010-12-08 |
TW200739821A (en) | 2007-10-16 |
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