JP2005340496A - 有機太陽電池及びその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 229910003481 amorphous carbon Inorganic materials 0.000 claims abstract description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 25
- 229910052799 carbon Inorganic materials 0.000 claims description 25
- 239000007789 gas Substances 0.000 claims description 25
- 238000009832 plasma treatment Methods 0.000 claims description 18
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 239000001257 hydrogen Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 239000004215 Carbon black (E152) Substances 0.000 claims description 9
- 229930195733 hydrocarbon Natural products 0.000 claims description 9
- 150000002430 hydrocarbons Chemical class 0.000 claims description 9
- 125000006575 electron-withdrawing group Chemical group 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 5
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 150000002366 halogen compounds Chemical class 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- -1 diborane Chemical compound 0.000 claims description 2
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- 239000011593 sulfur Substances 0.000 claims description 2
- 229910052717 sulfur Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 description 50
- 239000010410 layer Substances 0.000 description 45
- 239000002344 surface layer Substances 0.000 description 26
- 239000010409 thin film Substances 0.000 description 25
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000001020 plasma etching Methods 0.000 description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- 229910052731 fluorine Inorganic materials 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 238000005546 reactive sputtering Methods 0.000 description 4
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910014033 C-OH Inorganic materials 0.000 description 2
- 125000006414 CCl Chemical group ClC* 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910014570 C—OH Inorganic materials 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- JHJNPOSPVGRIAN-SFHVURJKSA-N n-[3-[(1s)-1-[[6-(3,4-dimethoxyphenyl)pyrazin-2-yl]amino]ethyl]phenyl]-5-methylpyridine-3-carboxamide Chemical compound C1=C(OC)C(OC)=CC=C1C1=CN=CC(N[C@@H](C)C=2C=C(NC(=O)C=3C=C(C)C=NC=3)C=CC=2)=N1 JHJNPOSPVGRIAN-SFHVURJKSA-N 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
【解決手段】 基体上に、少なくとも一方が有機半導体から成るn型半導体とp型半導体の積層体を介し、アノード体とカソード体が積層されて成る有機太陽電池において、前記アノード体が、電子吸引基で終端されたアモルファスカーボン膜である、ならびに、カソード体が、電子供与基で終端されたアモルファスカーボン膜であることを特徴とする有機太陽電池およびその製造方法を提供する。
【選択図】図1
Description
C.W.Tang,「Applied Physics Letters」,1986年1月,p.183 K.Murakoshi,R.Kogure,Y.Wada,andS.Yanagida,「Chemistry Letters」,1997年5月,p.471
アノード体として、炭化水素及び水素を含む原料ガスを用いたプラズマCVD法によりアモルファスカーボン膜を成膜する工程、
アモルファスカーボン膜を酸素またはハロゲンまたはハロゲン化合物を含むガスを用いたプラズマ処理を施す工程、
を含むことを特徴とする。
12,25,46・・・アノード体
32,52,67・・・アノード
13,24,34,45,54,65・・・p型有機半導体層
14,23,35,44,55,64・・・n型有機半導体層
15,22,36・・・カソード体
42,57,62・・・カソード
1a・・・C−F構造
1b・・・C−Cl構造
1c・・・C−O構造
2a・・・C−H構造
2b・・・C−R構造
2c・・・C−OH構造
33,53,66・・・アノード表面層
43,56,63・・・カソード表面層
58,68・・・絶縁基体
5A,6B・・・アノード側積層基板
5B,6A・・・カソード側積層基板
Claims (11)
- 基体上に、少なくとも一方が有機半導体から成るn型半導体とp型半導体の積層体を介し、アノード体とカソード体が積層されて成る有機太陽電池において、前記アノード体が電子吸引基で終端されたアモルファスカーボン膜を有することを特徴とする有機太陽電池。
- 前記電子吸引基が、酸素原子あるいはハロゲン原子であることを特徴とする請求項1記載の有機太陽電池。
- 基体上に、少なくとも一方が有機半導体から成るn型半導体とp型半導体の積層体を介し、アノード体とカソード体が積層されて成る有機太陽電池において、前記カソード体が電子供与基で終端されたアモルファスカーボン膜を有することを特徴とする有機太陽電池。
- 前記電子供与基が、水素原子あるいは炭化水素あるいは水酸基であることを特徴とする請求項3記載の有機太陽電池。
- 前記アモルファスカーボン膜が、ダイヤモンド状カーボン膜であることを特徴とする請求項1〜4に記載の有機太陽電池。
- 前記ダイヤモンド状カーボン膜に不純物がドープされていることを特徴とする請求項5に記載の有機太陽電池。
- 前記不純物は、窒素、燐、硫黄、硼素、酸素および珪素からなる群から選ばれた少なくとも一種を含むことを特徴とする請求項6に記載の有機太陽電池。
- 基体上に、少なくとも、
アノード体として、炭化水素及び水素を含む原料ガスを用いたプラズマCVD法によりアモルファスカーボン膜を成膜する工程、
アモルファスカーボン膜を酸素またはハロゲンまたはハロゲン化合物を含むガスを用いたプラズマ処理を施す工程、
を含むことを特徴とする有機太陽電池の製造方法。 - 基体上に、少なくとも、
カソード体として、炭化水素及び水素を含む原料ガスを用いたプラズマCVD法によりアモルファスカーボン膜を成膜する工程、
アモルファスカーボン膜を水素あるいは還元性のガスを用いたプラズマ処理を施す工程、
を含むことを特徴とする有機太陽電池の製造方法。 - 前記アモルファスカーボン膜が、ダイヤモンド状カーボン膜であることを特徴とする請求項8または9に記載の有機太陽電池の製造方法。
- 前記ダイヤモンド状カーボン膜を成膜する工程において、ドープガスとして、窒素、フォスフィン、硫化水素、ジボラン、酸素およびシランからなる群から選ばれた少なくとも一種を添加することを特徴とする請求項10に記載の有機太陽電池の製造方法。
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007013496A1 (ja) * | 2005-07-26 | 2007-02-01 | Matsushita Electric Works, Ltd. | 有機発電素子 |
JP2009514147A (ja) * | 2005-10-05 | 2009-04-02 | ベレティッチィ,トーマス | 熱強化型固体発電機 |
JP2010147135A (ja) * | 2008-12-17 | 2010-07-01 | Konica Minolta Holdings Inc | 有機光電変換素子の製造方法 |
KR101312974B1 (ko) | 2004-12-04 | 2013-10-10 | 제록스 코포레이션 | 비스(우레아-우레탄) 화합물 및 이를 함유하는 상 변화잉크 |
KR101342778B1 (ko) * | 2010-10-22 | 2013-12-19 | 가부시끼가이샤 도시바 | 광전 변환 소자 및 그의 제조 방법 |
KR101497950B1 (ko) * | 2013-11-19 | 2015-03-09 | 고려대학교 산학협력단 | 염료감응형 태양전지용 할로겐화된 그래핀 상대전극, 이의 제조방법 및 이를 포함하는 염료감응형 태양전지 |
US9234067B2 (en) | 2005-12-01 | 2016-01-12 | Henkel Ag & Co. Kgaa | Material forming supramolecular structures, process and uses |
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KR101312974B1 (ko) | 2004-12-04 | 2013-10-10 | 제록스 코포레이션 | 비스(우레아-우레탄) 화합물 및 이를 함유하는 상 변화잉크 |
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