JP2005330621A - Method for producing abrasive cloth - Google Patents
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Abstract
Description
本発明は、研磨布の製造方法に関し、更に詳しくは、シリコンウェハなどの半導体ウェハの研磨に好適な研磨布の製造方法に関する。 The present invention relates to a method for manufacturing a polishing cloth, and more particularly to a method for manufacturing a polishing cloth suitable for polishing a semiconductor wafer such as a silicon wafer.
従来、半導体ウェハの研磨に用いられる研磨布として、ウレタン樹脂を不織布等の基材に含浸させたいわゆる、ポリウレタン含浸不織布がある（例えば、特許文献１参照）。 Conventionally, as a polishing cloth used for polishing a semiconductor wafer, there is a so-called polyurethane-impregnated nonwoven fabric in which a base material such as a nonwoven fabric is impregnated with a urethane resin (see, for example, Patent Document 1).
かかる研磨布は、例えば、次のようにして製造される。すなわち、不織布を、湿式のウレタン樹脂をジメチルホルムアミド（ＤＭＦ）などの溶媒に溶解させたウレタン樹脂溶液に一次含浸し、これを凝固液中で湿式凝固させる。その後、洗浄により余分な溶剤等を除去した後、乾燥し、表裏面を平面研削して中間製品である基材を得る。 Such an abrasive cloth is manufactured as follows, for example. That is, the nonwoven fabric is primarily impregnated with a urethane resin solution obtained by dissolving a wet urethane resin in a solvent such as dimethylformamide (DMF), and this is wet-coagulated in a coagulation liquid. Thereafter, excess solvent and the like are removed by washing, followed by drying and surface grinding of the front and back surfaces to obtain a base material that is an intermediate product.
この基材を、乾式のウレタン樹脂をメチルエチルケトン（ＭＥＫ）などの溶媒に溶解させて硬化剤を添加したウレタン樹脂溶液に二次含浸し、加熱乾燥した後、表裏面を平面研削して所定の厚みの研磨布を得るものである。
かかる研磨布では、上述の二次含浸において、基材の湿式凝固による多孔質層に、ウレタン樹脂溶液が浸透し、それに引き続く加熱乾燥において、基材の表裏面から溶剤の揮発が生じるとともに、ウレタン樹脂の硬化反応が起こるのであるが、溶剤が基材の表裏面から蒸発するのに伴って、ウレタン樹脂の表裏面への移行が生じ、その際、表裏面の樹脂の密度が高くなるとともに、分布が不均一となる。 In such a polishing cloth, in the secondary impregnation described above, the urethane resin solution penetrates into the porous layer formed by wet coagulation of the base material, and in subsequent heating and drying, the solvent is volatilized from the front and back surfaces of the base material. The resin curing reaction occurs, but as the solvent evaporates from the front and back surfaces of the base material, the transition to the front and back surfaces of the urethane resin occurs, and at that time, the density of the resin on the front and back surfaces increases, Distribution is non-uniform.
かかる研磨布では、当該研磨布を研磨装置に取り付けて研磨装置を立ち上げた使用の初期段階においては、ダミーウェハ等を研磨して研磨布そのもをシリコンウエハになじませて安定した所要の平坦度が得られるように、いわゆる慣らし研磨（ダミー研磨）を行なう必要があるが、研磨布の研磨面(表面)は、上述のように樹脂の密度が高く、分布が不均一となっているために、表面に開口している多数の孔(ポア)内の樹脂も不均一となっており、このため、目詰まりが生じ易くなるとともに、ダミー研磨に要する時間が長くなる。 In such a polishing cloth, in the initial stage of use after the polishing cloth is attached to the polishing apparatus and the polishing apparatus is started up, the required flatness is stabilized by polishing a dummy wafer or the like and making the polishing cloth itself conform to the silicon wafer. It is necessary to perform so-called break-in polishing (dummy polishing) so that the polishing surface (surface) of the polishing cloth has a high resin density and a non-uniform distribution as described above. In addition, the resin in the many holes (pores) opened on the surface is also non-uniform, so that clogging is likely to occur and the time required for dummy polishing becomes longer.
したがって、本来の製品であるシリコンウェハの研磨（本研磨）に移行するまでに長時間を要して生産性が低下するという課題がある。 Therefore, there is a problem that it takes a long time to shift to polishing (main polishing) of a silicon wafer which is an original product, and productivity is lowered.
本発明は、上述のような課題に鑑みて為されたものであって、研磨布における樹脂の分布のばらつきを可及的に低減して均一化を図ることを目的とする。 The present invention has been made in view of the above-described problems, and an object of the present invention is to reduce the variation in the distribution of the resin in the polishing cloth as much as possible to achieve uniformity.
本発明では、上記目的を達成するために、次のように構成している。 In order to achieve the above object, the present invention is configured as follows.
すなわち、本発明の研磨布の製造方法は、基材を、樹脂溶液に含浸した後、加熱乾燥して研磨布を製造する方法であって、前記加熱乾燥後に、前記基材の少なくとも表面側を熱処理するものである。 That is, the method for producing an abrasive cloth of the present invention is a method for producing an abrasive cloth by impregnating a substrate with a resin solution and then drying by heating, and at least the surface side of the substrate is subjected to the heating and drying. Heat treatment is performed.
ここで、表面とは、研磨面となる側の面をいう。 Here, the surface refers to the surface on the side that becomes the polishing surface.
前記熱処理は、前記樹脂溶液の樹脂の軟化温度よりも高温で行うのが好ましく、前記基材に対して圧力を加えながら行うのが好ましい。また、樹脂溶液としては、ウレタン樹脂溶液が好ましい。 The heat treatment is preferably performed at a temperature higher than the softening temperature of the resin in the resin solution, and is preferably performed while applying pressure to the substrate. The resin solution is preferably a urethane resin solution.
本発明によると、樹脂溶液に含浸して加熱乾燥した基材は、表裏面の樹脂の密度が高く、分布が不均一となるのであるが、少なくとも研磨面となる表面側は、熱処理によって、樹脂が軟化溶解して内部に移行し、研磨面となる表面側の樹脂の分布の不均一が改善されることになる。 According to the present invention, the base material impregnated with the resin solution and dried by heating has a high density of the resin on the front and back surfaces, and the distribution becomes non-uniform. Softens and dissolves and migrates to the inside, and the uneven distribution of the resin on the surface side that becomes the polished surface is improved.
また、樹脂の軟化温度よりも高温で熱処理することにより、樹脂の内部への移行が確実に進んで、樹脂の分布の均一化を図ることができ、さらに、加圧することにより、表面から内部への樹脂の移行を促進できるとともに、厚みの均一化を図ることができる。 In addition, by heat treatment at a temperature higher than the softening temperature of the resin, the transition to the inside of the resin can be surely progressed, and the distribution of the resin can be made uniform. It is possible to promote the migration of the resin and to make the thickness uniform.
また、ウレタン樹脂を用いることによって、半導体ウェハに、研磨傷を発生させない適度な硬度と弾性とを得ることができる。 Further, by using the urethane resin, it is possible to obtain an appropriate hardness and elasticity that does not cause polishing scratches on the semiconductor wafer.
本発明の一実施態様においては、不織布を、一次含浸溶液に一次含浸する工程と、一次含浸した不織布を、凝固液中で湿式凝固する工程と、湿式凝固した不織布を、洗浄乾燥して前記基材とする工程と、前記基材を、前記樹脂溶液である二次含浸溶液に二次含浸する工程と、二次含浸した基材を、前記加熱乾燥する工程と、加熱乾燥した基材の少なくとも表面側を前記熱処理する工程とを含むものである。 In one embodiment of the present invention, a step of primary impregnation of a nonwoven fabric with a primary impregnation solution, a step of wet coagulation of the primary impregnated nonwoven fabric in a coagulation liquid, a wet-coagulated nonwoven fabric is washed and dried, and the base A step of secondarily impregnating the base material with a secondary impregnation solution that is the resin solution, a step of heating and drying the base material impregnated with the secondary solution, and a step of heating and drying the base material. And a step of heat-treating the surface side.
更に、前記熱処理した基材の前記表面を研削処理する工程を含むのが好ましい。 Furthermore, it is preferable to include a step of grinding the surface of the heat-treated substrate.
また、前記熱処理する工程では、加熱乾燥した前記基材を、熱ローラで加熱加圧するのが好ましい。 In the heat treatment step, the heat-dried base material is preferably heated and pressurized with a heat roller.
本発明によると、不織布を、一次含浸溶液に含浸した後、湿式凝固させ、洗浄乾燥することにより、研磨布の中間製品である基材を得、この基材を、二次含浸溶液に含浸した後、加熱乾燥し、その後、基材の少なくとも表面側を熱処理するので、研磨面となる表面側の樹脂の分布の不均一が改善された研磨布を得ることができる。 According to the present invention, the nonwoven fabric is impregnated with the primary impregnation solution, and then wet-solidified, washed and dried to obtain a base material that is an intermediate product of the polishing cloth, and this base material is impregnated with the secondary impregnation solution. Thereafter, the substrate is heat-dried, and then at least the surface side of the substrate is heat-treated, so that a polishing cloth with improved nonuniform distribution of the resin on the surface side that becomes the polishing surface can be obtained.
また、表面を研削処理することによって、多孔質の基材の表面に多数の孔(ポア)を開口することができ、研磨の際には、これらの孔によって、研磨スラリー中の研磨剤が、保持されるとともに、流動し、高い研磨レートを維持できることになる。 In addition, by grinding the surface, it is possible to open a large number of pores (pores) on the surface of the porous base material, and during polishing, the abrasive in the polishing slurry is caused by these holes. While being held, it flows and can maintain a high polishing rate.
また、熱ローラで加熱加圧することによって、基材を連続的に熱処理することができる。 Moreover, a base material can be heat-processed continuously by heat-pressing with a heat roller.
以上のように本発明によれば、樹脂溶液に含浸して加熱乾燥した基材の少なくとも表面側を熱処理するので、研磨面となる表面側の樹脂の分布の不均一が改善されることになり、これによって、研磨面の樹脂の分布が不均一であった従来例の研磨布に比べて、ダミー研磨に要する時間を短縮することができ、半導体ウェハの生産性の向上を図ることができる。 As described above, according to the present invention, since at least the surface side of the substrate impregnated with the resin solution and heat-dried is heat-treated, unevenness of the resin distribution on the surface side that becomes the polishing surface is improved. As a result, the time required for the dummy polishing can be shortened and the productivity of the semiconductor wafer can be improved as compared with the conventional polishing cloth in which the distribution of the resin on the polishing surface is not uniform.
以下、図面によって本発明の実施の形態について詳細に説明する。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
図１および図２は、本発明に係る研磨布の製造方法の各工程を示す図であり、図１は、不織布から中間製品である基材を製造するまでの工程を示し、図２は、この基材から最終製品である研磨布を製造するまでの各工程をそれぞれ示している。 FIG. 1 and FIG. 2 are diagrams showing each step of the method for producing a polishing cloth according to the present invention, FIG. 1 shows the steps from the production of a nonwoven fabric to a base material as an intermediate product, and FIG. Each process from the base material to the production of the polishing cloth as the final product is shown.
図１に示されるように、先ず、湿式のウレタン樹脂を、ジメチルホルムアミド（ＤＭＦ）などの溶媒に混合溶解させて一次含浸溶液としてのウレタン樹脂溶液を作製し、フェルト等の不織布を、このウレタン樹脂溶液に一次含浸する。 As shown in FIG. 1, first, a wet urethane resin is mixed and dissolved in a solvent such as dimethylformamide (DMF) to prepare a urethane resin solution as a primary impregnation solution. Primary impregnation into the solution.
次に、凝固液中でウレタン樹脂を湿式凝固させ、洗浄して溶媒を除去した後、熱風で乾燥し、その後、表裏面を平面研削(バフ)して中間製品である多孔質の基材を得る。 Next, the urethane resin is wet coagulated in the coagulation liquid, washed to remove the solvent, then dried with hot air, and then the front and back surfaces are ground (buffed) to obtain a porous base material that is an intermediate product. obtain.
ウレタン樹脂としては、ポリエステル系あるいはポリエーテル系、ポリカーボネート系などの従来と同様のウレタン樹脂を用いることができ、異なる種類のウレタン樹脂をブレンドしてもよい。 As the urethane resin, a conventional urethane resin such as polyester, polyether, or polycarbonate can be used, and different types of urethane resins may be blended.
不織布としては、例えば、ポリアミド系、ポリエステル系等の不織布を用いることができる。 As the nonwoven fabric, for example, a polyamide-based, polyester-based or the like nonwoven fabric can be used.
ウレタン樹脂を溶解させる溶媒としては、上述のジメチルホルムアミドの他、例えば、ジメチルスルホキシド、テトラヒドロフラン、ジメチルアセトアミド等の従来の同様の溶媒を用いることができる。 As a solvent for dissolving the urethane resin, a conventional similar solvent such as dimethyl sulfoxide, tetrahydrofuran, dimethylacetamide and the like can be used in addition to the above dimethylformamide.
次に、図２に示されるように、乾式のウレタン樹脂をメチルエチルケトン（ＭＥＫ）などの溶媒に溶解させて硬化剤を添加した二次含浸溶液としてのウレタン樹脂溶液を作製し、このウレタン樹脂溶液に、上述のようにして得られた中間製品である基材を二次含浸し、加熱乾燥させて溶媒を除去するとともに、ウレタン樹脂を硬化させる。 Next, as shown in FIG. 2, a urethane resin solution is prepared as a secondary impregnation solution in which a dry urethane resin is dissolved in a solvent such as methyl ethyl ketone (MEK) and a curing agent is added. The base material, which is an intermediate product obtained as described above, is secondarily impregnated and dried by heating to remove the solvent and cure the urethane resin.
二次含浸溶液としてのウレタン樹脂溶液としては、例えば、ポリエステルあるいはポリエーテル系のＭＤＩ(メチレンジイソシアネート)あるいはＴＤＩ(トリレンジイソシアネート)末端を持つウレタンプレポリマー単体に、３，３’ジクロロ−４，４’ジアミノフェニルメタン等の有機アミン硬化剤を加えて、メチルエチルケトン等の溶剤に混合溶解させたものが挙げられる。 As the urethane resin solution as the secondary impregnation solution, for example, a polyester or polyether-based urethane prepolymer having a MDI (methylene diisocyanate) or TDI (tolylene diisocyanate) terminal is added to 3,3′dichloro-4,4. 'Addition of an organic amine curing agent such as diaminophenylmethane and mixing and dissolving in a solvent such as methyl ethyl ketone.
次に、この実施の形態では、二次含浸して加熱乾燥した基材におけるウレタン樹脂の分布の不均一の改善を図るために、加熱乾燥した基材を、一対の熱ロールの間を通過させることによって、加熱および加圧して熱処理を行い、ウレタン樹脂を軟化溶解させて表裏面の樹脂を内部に移行させて研磨面となる表面側の樹脂の分布の不均一を改善している。 Next, in this embodiment, in order to improve non-uniform distribution of the urethane resin in the base material that has been secondarily impregnated and heat-dried, the heat-dried base material is passed between a pair of heat rolls. Thus, heat treatment is performed by heating and pressurizing, and the urethane resin is softened and dissolved to transfer the resin on the front and back surfaces to the inside, thereby improving the non-uniform distribution of the resin on the surface side that becomes the polished surface.
この熱処理の温度は、ウレタン樹脂の軟化温度よりも高温であるのが、好ましい。この実施の形態では、一対の熱ロール間を通過させて加熱および加圧して行う熱処理の条件は、温度を２３０℃、送り速度を１．４ｍ／ｍｉｎとした。 The heat treatment temperature is preferably higher than the softening temperature of the urethane resin. In this embodiment, the conditions of the heat treatment performed by heating and pressurizing by passing between a pair of hot rolls were a temperature of 230 ° C. and a feed rate of 1.4 m / min.
このように熱ロールを用いて加熱および加圧するので、厚みの均一化を併せて図ることができる。 Thus, since it heats and pressurizes using a heat roll, thickness uniformity can be achieved collectively.
次に、熱処理した基材の表裏面を平面研削(バフ)して所定の厚みの最終製品である研磨布を得るものである。 Next, the front and back surfaces of the heat-treated substrate are surface ground (buffed) to obtain an abrasive cloth as a final product having a predetermined thickness.
この平面研削によって、基材の表面には、多数の孔(ポア)が開口することになる。これら多数の孔によって、研磨の際には、研磨スラリー中の研磨剤が、保持されるとともに、流動し、高い研磨レートを維持できることになる。 By this surface grinding, a large number of holes (pores) are opened on the surface of the substrate. By these many holes, the polishing agent in the polishing slurry is held and flows during polishing, and a high polishing rate can be maintained.
図３は、上述のように熱処理を行った本発明に係る研磨布と、熱処理を行っていない従来の研磨布の研磨結果を示すものであり、同図において、縦軸は、平坦度であるＳＦＱＲ(Ｓite Ｆront least sＱuares Ｒange：サイト毎のウェハ表面の高低差)を、横軸は、研磨回数(ｒｕｎ)をそれぞれ示しており、１回の研磨時間を１０分としている。また、ラインＡは、熱処理を行った本発明に係る研磨布の結果を近似した曲線を、ラインＢは、従来の研磨布の結果を近似した曲線をそれぞれ示している。 FIG. 3 shows the polishing results of the polishing cloth according to the present invention that has been heat-treated as described above and the conventional polishing cloth that has not been heat-treated. In FIG. 3, the vertical axis represents the flatness. SFQR (Site Front sQuares Range: difference in height of the wafer surface for each site), the horizontal axis indicates the number of times of polishing (run), and the time for one polishing is 10 minutes. Line A shows a curve approximating the result of the polishing cloth according to the present invention after heat treatment, and line B shows a curve approximating the result of the conventional polishing cloth.
従来の研磨布では、研磨開始直後で平坦度が約０．７μｍであって、０．１μｍの平坦度を得るまでに研磨回数が、約１４０回要したのに対して、この実施の形態の研磨布では、研磨開始直後で平坦度が約０．２〜０．３μｍであって、０．１μｍの平坦度を得るまでに要した研磨回数は、約７０回であり、従来に比べて約半分程度に短縮することができた。 In the conventional polishing cloth, the flatness is about 0.7 μm immediately after the start of polishing, and it takes about 140 times to obtain the flatness of 0.1 μm. In the polishing cloth, the flatness is about 0.2 to 0.3 μm immediately after the start of polishing, and the number of polishing required to obtain the flatness of 0.1 μm is about 70 times, which is about We were able to shorten it to about half.
このように、研磨面の樹脂の分布が不均一であった従来例の研磨布に比べて、この実施の形態の研磨布は、所望の平坦度を得るまでのダミー研磨に要する時間を短縮することができ、これによって、半導体ウェハの生産性の向上を図ることができる。 Thus, the polishing cloth of this embodiment shortens the time required for dummy polishing until a desired flatness is obtained, as compared with the conventional polishing cloth in which the resin distribution on the polishing surface is non-uniform. Thus, the productivity of the semiconductor wafer can be improved.
(その他の実施の形態)
上述の実施の形態では、ロールを用いて熱処理を行ったけれども、プレスによって加圧、加熱するようにしてもよい。
(Other embodiments)
In the above-described embodiment, heat treatment is performed using a roll, but pressurization and heating may be performed by a press.
上述の実施の形態では、基材の表裏両面を加熱したけれども、本発明の他の実施の形態として、研磨面となる表面側のみを加熱してもよい。 In the above-described embodiment, both the front and back surfaces of the base material are heated. However, as another embodiment of the present invention, only the surface side serving as the polishing surface may be heated.
本発明は、半導体ウェハや光学部品レンズなどの研磨布の製造に有用である。 The present invention is useful for manufacturing polishing cloths such as semiconductor wafers and optical component lenses.
Ａ 本発明の研磨布の研磨特性を示す曲線
Ｂ 従来例の研磨布の研磨特性を示す曲線
A Curve showing the polishing characteristics of the polishing cloth of the present invention B Curve showing the polishing characteristics of the polishing cloth of the conventional example
Claims (7)
前記加熱乾燥後に、前記基材の少なくとも表面側を熱処理することを特徴とする研磨布の製造方法。 A method for producing a polishing cloth by impregnating a substrate with a resin solution and then drying by heating,
After the heat drying, at least the surface side of the base material is heat-treated.
一次含浸した不織布を、凝固液中で湿式凝固する工程と、
湿式凝固した不織布を、洗浄乾燥して前記基材とする工程と、
前記基材を、前記樹脂溶液である二次含浸溶液に二次含浸する工程と、
二次含浸した基材を、前記加熱乾燥する工程と、
加熱乾燥した基材の少なくとも表面側を前記熱処理する工程と、
を含む請求項１〜４のいずれか１項に記載の研磨布の製造方法。 A primary impregnation of a nonwoven fabric with a primary impregnation solution;
A step of wet coagulating the primary impregnated nonwoven fabric in a coagulation liquid;
A process of washing and drying the wet-solidified nonwoven fabric to form the substrate;
Secondary impregnation of the substrate with a secondary impregnation solution which is the resin solution;
A step of heating and drying the secondary impregnated substrate;
A step of heat-treating at least the surface side of the heat-dried substrate;
The manufacturing method of the polishing cloth of any one of Claims 1-4 containing this.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004150468A JP2005330621A (en) | 2004-05-20 | 2004-05-20 | Method for producing abrasive cloth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004150468A JP2005330621A (en) | 2004-05-20 | 2004-05-20 | Method for producing abrasive cloth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2005330621A true JP2005330621A (en) | 2005-12-02 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004150468A Pending JP2005330621A (en) | 2004-05-20 | 2004-05-20 | Method for producing abrasive cloth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005330621A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009025533A2 (en) * | 2007-08-23 | 2009-02-26 | Kolon Industries, Inc | Polishing pad, polishing pad tile and method of manufacturing the polishing pad |
| US8167690B2 (en) | 2006-09-08 | 2012-05-01 | Toyo Tire & Rubber Co., Ltd. | Polishing pad |
| US8257153B2 (en) | 2007-01-15 | 2012-09-04 | Toyo Tire & Rubber Co., Ltd. | Polishing pad and a method for manufacturing the same |
| US8318298B2 (en) | 2005-07-15 | 2012-11-27 | Toyo Tire & Rubber Co., Ltd. | Layered sheets and processes for producing the same |
| US8476328B2 (en) | 2008-03-12 | 2013-07-02 | Toyo Tire & Rubber Co., Ltd | Polishing pad |
| US9126303B2 (en) | 2005-08-30 | 2015-09-08 | Toyo Tire & Rubber Co., Ltd. | Method for production of a laminate polishing pad |
| JP2020063575A (en) * | 2018-10-16 | 2020-04-23 | 株式会社ロブテックスファスニングシステム | Steel interior-exterior base material and manufacturing method thereof |
-
2004
- 2004-05-20 JP JP2004150468A patent/JP2005330621A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8318298B2 (en) | 2005-07-15 | 2012-11-27 | Toyo Tire & Rubber Co., Ltd. | Layered sheets and processes for producing the same |
| US9126303B2 (en) | 2005-08-30 | 2015-09-08 | Toyo Tire & Rubber Co., Ltd. | Method for production of a laminate polishing pad |
| US8167690B2 (en) | 2006-09-08 | 2012-05-01 | Toyo Tire & Rubber Co., Ltd. | Polishing pad |
| US8257153B2 (en) | 2007-01-15 | 2012-09-04 | Toyo Tire & Rubber Co., Ltd. | Polishing pad and a method for manufacturing the same |
| WO2009025533A2 (en) * | 2007-08-23 | 2009-02-26 | Kolon Industries, Inc | Polishing pad, polishing pad tile and method of manufacturing the polishing pad |
| WO2009025533A3 (en) * | 2007-08-23 | 2009-04-30 | Kolon Inc | Polishing pad, polishing pad tile and method of manufacturing the polishing pad |
| US8476328B2 (en) | 2008-03-12 | 2013-07-02 | Toyo Tire & Rubber Co., Ltd | Polishing pad |
| JP2020063575A (en) * | 2018-10-16 | 2020-04-23 | 株式会社ロブテックスファスニングシステム | Steel interior-exterior base material and manufacturing method thereof |
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