JP2005311356A - 不揮発性抵抗切替メモリのための堆積方法 - Google Patents
不揮発性抵抗切替メモリのための堆積方法 Download PDFInfo
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- JP2005311356A JP2005311356A JP2005108749A JP2005108749A JP2005311356A JP 2005311356 A JP2005311356 A JP 2005311356A JP 2005108749 A JP2005108749 A JP 2005108749A JP 2005108749 A JP2005108749 A JP 2005108749A JP 2005311356 A JP2005311356 A JP 2005311356A
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- 238000000151 deposition Methods 0.000 title claims abstract description 26
- 230000015654 memory Effects 0.000 title abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 38
- 239000000463 material Substances 0.000 claims abstract description 35
- 238000004377 microelectronic Methods 0.000 claims abstract description 8
- 238000005240 physical vapour deposition Methods 0.000 claims description 23
- 229910002367 SrTiO Inorganic materials 0.000 claims description 20
- 239000011651 chromium Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910000314 transition metal oxide Inorganic materials 0.000 claims description 2
- 230000002085 persistent effect Effects 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 35
- 230000008569 process Effects 0.000 description 21
- 235000012431 wafers Nutrition 0.000 description 14
- 239000000758 substrate Substances 0.000 description 12
- 230000002441 reversible effect Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 6
- 150000004706 metal oxides Chemical class 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 229910003455 mixed metal oxide Inorganic materials 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- -1 complex metal oxide Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
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- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
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- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
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- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
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- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
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Abstract
【解決手段】本発明は、永続性がある導電状態の間で切り替え可能なスイッチング材料を堆積するプロセスに関する。本発明は、さらに、デジタル情報を格納するためのスイッチング材料を備える超小型電子デバイスすなわち不揮発性抵抗切替メモリに関する。本プロセスは、400℃より低い温度で、標準CMOS堆積技術によってスイッチング材料を堆積するステップを含む。
【選択図】図1
Description
11 絶縁バッファ層
12 第1の電極(ベース電極)
14 不揮発性抵抗切替メモリ素子(スイッチング部材)
16 第2の電極(上部電極)
18 基板
Claims (10)
- それぞれの状態が永続性である少なくとも第1の導電状態と第2の導電状態の間で切り替え可能なスイッチング材料を堆積する方法であって、400℃より低い温度で標準CMOS堆積技術によって前記スイッチング材料を堆積するステップを備える方法。
- 物理的気相堆積法(PVD)および有機金属化学的気相堆積法(MOCVD)のうちの1つを堆積技術として使用することをさらに備える、請求項1に記載の方法。
- 前記物理的気相堆積法(PVD)の使用が、高周波(RF)スパッタリングを使用することをさらに備える、請求項2に記載の方法。
- 前記スイッチング材料をほぼ100℃で堆積することをさらに備える、請求項1ないし3のいずれかに記載の方法。
- 前記スイッチング材料を室温で堆積することをさらに備える、請求項1から3のいずれかに記載の方法。
- 前記堆積ステップの後で、アニール処理ステップが使用されない、請求項1ないし5のいずれかに記載の方法。
- 前記スイッチング材料として、遷移金属酸化物を使用することをさらに備える、請求項1ないし6のいずれかに記載の方法。
- 前記スイッチング材料として、クロムがドープされたSrTiO3を使用することをさらに備える、請求項1ないし7のいずれかに記載の方法。
- 前記スイッチング材料として、クロムがドープされたSrZrO3を使用することをさらに備える、請求項1ないし7のいずれかに記載の方法。
- 請求項1ないし9のいずれかに従って堆積されたスイッチング材料を備えた、デジタル情報を格納する超小型電子デバイス。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04405239 | 2004-04-16 |
Publications (1)
Publication Number | Publication Date |
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JP2005311356A true JP2005311356A (ja) | 2005-11-04 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2005108749A Pending JP2005311356A (ja) | 2004-04-16 | 2005-04-05 | 不揮発性抵抗切替メモリのための堆積方法 |
Country Status (3)
Country | Link |
---|---|
US (3) | US7897411B2 (ja) |
EP (1) | EP1587137A1 (ja) |
JP (1) | JP2005311356A (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2007294925A (ja) * | 2006-04-21 | 2007-11-08 | Samsung Electronics Co Ltd | 不揮発性メモリ素子、その動作方法、及びその製造方法 |
WO2008007481A1 (en) * | 2006-07-14 | 2008-01-17 | Murata Manufacturing Co., Ltd. | Resistive memory device |
JP2008016513A (ja) * | 2006-07-03 | 2008-01-24 | Nippon Telegr & Teleph Corp <Ntt> | メモリ装置 |
JP2008182154A (ja) * | 2007-01-26 | 2008-08-07 | Nippon Telegr & Teleph Corp <Ntt> | メモリ装置 |
JP2008182156A (ja) * | 2007-01-26 | 2008-08-07 | Nippon Telegr & Teleph Corp <Ntt> | 金属酸化物素子及びその製造方法 |
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KR100576369B1 (ko) * | 2004-11-23 | 2006-05-03 | 삼성전자주식회사 | 전이 금속 산화막을 데이타 저장 물질막으로 채택하는비휘발성 기억소자의 프로그램 방법 |
TWI246186B (en) * | 2004-12-21 | 2005-12-21 | Winbond Electronics Corp | Nonvolatile memory and fabrication method thereof |
DE102006040576B4 (de) * | 2006-08-30 | 2009-10-08 | Angaris Gmbh | Verfahren zur Herstellung eines Dünnschicht-Thermogenerators |
US7619936B2 (en) * | 2006-11-16 | 2009-11-17 | Qimonda North America Corp. | System that prevents reduction in data retention |
US8488362B2 (en) | 2009-04-29 | 2013-07-16 | Macronix International Co., Ltd. | Graded metal oxide resistance based semiconductor memory device |
US8462580B2 (en) | 2010-11-17 | 2013-06-11 | Sandisk 3D Llc | Memory system with reversible resistivity-switching using pulses of alternatrie polarity |
US8355271B2 (en) | 2010-11-17 | 2013-01-15 | Sandisk 3D Llc | Memory system with reversible resistivity-switching using pulses of alternate polarity |
US8699258B2 (en) | 2011-01-21 | 2014-04-15 | Macronix International Co., Ltd. | Verification algorithm for metal-oxide resistive memory |
US20140159770A1 (en) * | 2012-12-12 | 2014-06-12 | Alexander Mikhailovich Shukh | Nonvolatile Logic Circuit |
US9123890B2 (en) | 2013-02-14 | 2015-09-01 | Sandisk 3D Llc | Resistance-switching memory cell with multiple raised structures in a bottom electrode |
US9437813B2 (en) | 2013-02-14 | 2016-09-06 | Sandisk Technologies Llc | Method for forming resistance-switching memory cell with multiple electrodes using nano-particle hard mask |
WO2016018198A1 (en) * | 2014-07-26 | 2016-02-04 | Hewlett-Packard Development Company, L.P. | Printhead with a number of memristors having metal-doped metalorganic switching oxides |
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JPH0931645A (ja) * | 1995-07-21 | 1997-02-04 | Sharp Corp | 誘電体薄膜素子の製造方法 |
JPH09331020A (ja) | 1996-06-07 | 1997-12-22 | Sharp Corp | 誘電体薄膜キャパシタ素子及びその製造方法 |
WO2000049659A1 (en) * | 1999-02-17 | 2000-08-24 | International Business Machines Corporation | Microelectronic device for storing information and method thereof |
US6326315B1 (en) * | 2000-03-09 | 2001-12-04 | Symetrix Corporation | Low temperature rapid ramping anneal method for fabricating layered superlattice materials and making electronic devices including same |
JP2002368200A (ja) * | 2001-06-08 | 2002-12-20 | Sony Corp | 半導体記憶装置 |
US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
US6759249B2 (en) * | 2002-02-07 | 2004-07-06 | Sharp Laboratories Of America, Inc. | Device and method for reversible resistance change induced by electric pulses in non-crystalline perovskite unipolar programmable memory |
US7211199B2 (en) * | 2002-03-15 | 2007-05-01 | The Trustees Of The University Of Pennsylvania | Magnetically-and electrically-induced variable resistance materials and method for preparing same |
US6762481B2 (en) * | 2002-10-08 | 2004-07-13 | The University Of Houston System | Electrically programmable nonvolatile variable capacitor |
US7063984B2 (en) * | 2003-03-13 | 2006-06-20 | Unity Semiconductor Corporation | Low temperature deposition of complex metal oxides (CMO) memory materials for non-volatile memory integrated circuits |
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2005
- 2005-04-01 EP EP05007183A patent/EP1587137A1/en not_active Withdrawn
- 2005-04-05 JP JP2005108749A patent/JP2005311356A/ja active Pending
- 2005-04-14 US US11/105,849 patent/US7897411B2/en not_active Expired - Fee Related
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2009
- 2009-08-13 US US12/540,949 patent/US7923263B2/en active Active
- 2009-08-14 US US12/541,411 patent/US7897957B2/en not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2007294925A (ja) * | 2006-04-21 | 2007-11-08 | Samsung Electronics Co Ltd | 不揮発性メモリ素子、その動作方法、及びその製造方法 |
JP2008016513A (ja) * | 2006-07-03 | 2008-01-24 | Nippon Telegr & Teleph Corp <Ntt> | メモリ装置 |
WO2008007481A1 (en) * | 2006-07-14 | 2008-01-17 | Murata Manufacturing Co., Ltd. | Resistive memory device |
JP5251506B2 (ja) * | 2006-07-14 | 2013-07-31 | 株式会社村田製作所 | 抵抗記憶素子 |
JP2008182154A (ja) * | 2007-01-26 | 2008-08-07 | Nippon Telegr & Teleph Corp <Ntt> | メモリ装置 |
JP2008182156A (ja) * | 2007-01-26 | 2008-08-07 | Nippon Telegr & Teleph Corp <Ntt> | 金属酸化物素子及びその製造方法 |
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US20050260839A1 (en) | 2005-11-24 |
US7897411B2 (en) | 2011-03-01 |
EP1587137A1 (en) | 2005-10-19 |
US7923263B2 (en) | 2011-04-12 |
US20090305487A1 (en) | 2009-12-10 |
US7897957B2 (en) | 2011-03-01 |
US20090308313A1 (en) | 2009-12-17 |
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