JP2005303286A5 - - Google Patents

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Publication number
JP2005303286A5
JP2005303286A5 JP2005077638A JP2005077638A JP2005303286A5 JP 2005303286 A5 JP2005303286 A5 JP 2005303286A5 JP 2005077638 A JP2005077638 A JP 2005077638A JP 2005077638 A JP2005077638 A JP 2005077638A JP 2005303286 A5 JP2005303286 A5 JP 2005303286A5
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Japan
Prior art keywords
substrate
compound semiconductor
light emitting
semiconductor light
producing
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JP2005077638A
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JP2005303286A (en
JP4540514B2 (en
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Claims (6)

基板となるウェハー上に、ｎ型またはｐ型の化合物半導体からなる発光層を含む化合物半導体層を積層し、該発光層に駆動電流を流通させるための負極および正極が所定の位置に配置し、個々の発光素子に分離するための分離帯域を形成し、該基板となるウェハー内部に焦点位置を設定したレーザー光を、該基板の該分離帯域に沿って直線状に走査しつつ間歇的に照射し、その後、該分離帯域に沿って個々の発光素子に分割することにより、発光素子の基板側面に、平面形状で波浪型にうねった辺方向に周期的な凹凸を形成することを特徴とする化合物半導体発光素子の製造方法。 A compound semiconductor layer including a light emitting layer made of an n-type or p-type compound semiconductor is stacked on a wafer serving as a substrate, and a negative electrode and a positive electrode for allowing a driving current to flow through the light emitting layer are disposed at predetermined positions. A separation band for separation into individual light emitting elements is formed, and laser light having a focal position set inside the wafer serving as the substrate is intermittently irradiated while scanning linearly along the separation band of the substrate. Then, by dividing into individual light emitting elements along the separation band , periodic irregularities are formed on the side surface of the substrate of the light emitting elements in the side direction that is wavy in a planar shape. A method for producing a compound semiconductor light emitting device. レーザー光を間歇的に照射する際の間隔を４μｍ以上４０μｍ以下とすることを特徴とする請求項１に記載の化合物半導体発光素子の製造方法。The method for producing a compound semiconductor light-emitting element according to claim 1, wherein an interval when intermittently irradiating laser light is 4 μm or more and 40 μm or less. レーザー光の焦点位置の深さを、基板厚さの１／１０〜３／４とすることを特徴とする請求項１または２のいずれかに記載の化合物半導体発光素子の製造方法。3. The method of manufacturing a compound semiconductor light emitting element according to claim 1, wherein the depth of the focal position of the laser beam is 1/10 to 3/4 of the substrate thickness. レーザー光を、該基板の該分離帯域に沿って直線上に走査しつつ間歇的に照射した後、レーザーにより該基板の該分離帯域に沿ってスクライブラインをさらに設けることを特徴とする請求項１〜３のいずれか一項に記載の化合物半導体発光素子の製造方法。The laser beam is further irradiated intermittently while scanning linearly along the separation zone of the substrate, and then a scribe line is further provided along the separation zone of the substrate by the laser. The manufacturing method of the compound semiconductor light-emitting device as described in any one of -3. レーザー光を、基板背面から照射することを特徴とする請求項１〜４のいずれか一項に記載の化合物半導体発光素子の製造方法。The method for producing a compound semiconductor light-emitting element according to claim 1, wherein the laser light is irradiated from the back surface of the substrate. 基板がサファイアからなることを特徴とする請求項１〜５のいずれか一項に記載の化合物半導体発光素子の製造方法。The method for producing a compound semiconductor light-emitting element according to claim 1, wherein the substrate is made of sapphire.
JP2005077638A 2004-03-19 2005-03-17 Compound semiconductor light emitting device and manufacturing method thereof Active JP4540514B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005077638A JP4540514B2 (en) 2004-03-19 2005-03-17 Compound semiconductor light emitting device and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004081286 2004-03-19
JP2005077638A JP4540514B2 (en) 2004-03-19 2005-03-17 Compound semiconductor light emitting device and manufacturing method thereof

Publications (3)

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JP2005303286A JP2005303286A (en) 2005-10-27
JP2005303286A5 true JP2005303286A5 (en) 2010-06-17
JP4540514B2 JP4540514B2 (en) 2010-09-08

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JP2005077638A Active JP4540514B2 (en) 2004-03-19 2005-03-17 Compound semiconductor light emitting device and manufacturing method thereof

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JP (1) JP4540514B2 (en)

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Publication number Priority date Publication date Assignee Title
JP4986445B2 (en) * 2005-12-13 2012-07-25 昭和電工株式会社 Gallium nitride compound semiconductor light emitting device
JP2009059969A (en) * 2007-08-31 2009-03-19 Seiwa Electric Mfg Co Ltd Semiconductor light-emitting element, light-emitting device, luminaire, display unit, and method for fabricating semiconductor light-emitting element
KR101123010B1 (en) * 2008-12-09 2012-06-15 삼성엘이디 주식회사 semi-conductor light emitting device and manufacturing method thereof
TWI470823B (en) 2009-02-11 2015-01-21 Epistar Corp Light-emitting device and manufacturing method thereof
JP2010278145A (en) * 2009-05-27 2010-12-09 Shogen Koden Kofun Yugenkoshi Light-emitting element and method of manufacturing the same
WO2011007816A1 (en) * 2009-07-15 2011-01-20 三菱化学株式会社 Semiconductor light-emitting element, semiconductor light-emitting device, method for manufacturing semiconductor light-emitting element, and method for manufacturing semiconductor light-emitting device
JP2012025068A (en) * 2010-07-26 2012-02-09 Kitaoka Tekkosho:Kk Apparatus and method for cleaving of brittle material
KR20120100193A (en) * 2011-03-03 2012-09-12 서울옵토디바이스주식회사 Light emitting diode chip
JP5644745B2 (en) * 2011-12-05 2014-12-24 豊田合成株式会社 Semiconductor light emitting element and light emitting device
EP2605295A3 (en) * 2011-12-13 2015-11-11 LG Innotek Co., Ltd. Ultraviolet light emitting device
TWI514622B (en) * 2013-02-19 2015-12-21 Lextar Electronics Corp Led chip and method for manufacturing the same
JP6151557B2 (en) * 2013-05-13 2017-06-21 株式会社ディスコ Laser processing method

Family Cites Families (12)

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Publication number Priority date Publication date Assignee Title
JPS5650586A (en) * 1979-10-01 1981-05-07 Mitsubishi Electric Corp Light emitting diode
JPH03129882A (en) * 1989-10-16 1991-06-03 Mitsubishi Monsanto Chem Co Light emitting diode chip
JPH04116848A (en) * 1990-09-06 1992-04-17 Seiko Instr Inc Manufacture of semiconductor device
JPH07273069A (en) * 1994-03-31 1995-10-20 Nichia Chem Ind Ltd Manufacture of gallium nitride compound semiconductor chip
JPH0992878A (en) * 1995-09-25 1997-04-04 Shin Etsu Handotai Co Ltd Semiconductor light emitting device and manufacturing method thereof
JPH09270528A (en) * 1996-03-29 1997-10-14 Sanyo Electric Co Ltd Light emitting diode element and manufacturing method thereof
JP3626442B2 (en) * 2000-09-13 2005-03-09 浜松ホトニクス株式会社 Laser processing method
JP3852000B2 (en) * 2001-09-28 2006-11-29 豊田合成株式会社 Light emitting element
JP2003151921A (en) * 2001-11-09 2003-05-23 Sanyo Electric Co Ltd Compound semiconductor and method of manufacturing the same
JP3715627B2 (en) * 2002-01-29 2005-11-09 株式会社東芝 Semiconductor light emitting device and manufacturing method thereof
JP2003338468A (en) * 2002-03-12 2003-11-28 Hamamatsu Photonics Kk Manufacturing method of light-emitting element, light- emitting diode, and semiconductor laser element
JP2004165227A (en) * 2002-11-08 2004-06-10 Toyoda Gosei Co Ltd Method of manufacturing group iii nitride compound semiconductor element

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