JP2005288716A - Metal-ceramics joining member - Google Patents
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- JP2005288716A JP2005288716A JP2004102936A JP2004102936A JP2005288716A JP 2005288716 A JP2005288716 A JP 2005288716A JP 2004102936 A JP2004102936 A JP 2004102936A JP 2004102936 A JP2004102936 A JP 2004102936A JP 2005288716 A JP2005288716 A JP 2005288716A
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本発明は、アルミニウムまたはアルミニウム合金からなる金属部材がセラミックス部材に接合した金属−セラミックス接合部材に関し、特に、パワーモジュール用などの大電力素子搭載用の金属−セラミックス回路基板として使用される金属−セラミックス接合部材に関する。 The present invention relates to a metal-ceramic bonding member in which a metal member made of aluminum or an aluminum alloy is bonded to a ceramic member, and in particular, a metal-ceramic used as a metal-ceramic circuit board for mounting a large power element such as for a power module. The present invention relates to a joining member.
従来、アルミニウムフィンなどのアルミニウム部材の半田付けする面に、電気めっきまたは無電解めっきによって厚さ０．５〜２０μｍのニッケル含有めっきを施すことにより、熱放散能力および熱疲労特性を向上させるとともに、半田の接合強度を高めることが知られている（例えば、特許文献１参照）。 Conventionally, by applying nickel-containing plating with a thickness of 0.5 to 20 μm by electroplating or electroless plating on the surface to be soldered of an aluminum member such as an aluminum fin, the heat dissipation capability and thermal fatigue characteristics are improved, It is known to increase the bonding strength of solder (see, for example, Patent Document 1).
また、パワーモジュール用のアルミニウム−セラミックス接合基板では、セラミックス基板の一方の面にアルミニウム回路板が接合され、他方の面に放熱板が接合されている場合が多く、特に、アルミニウム回路板は複数のアイランド状に形成され、その上に電極を設置するために、アルミニウム回路板に安価な無電解ニッケル合金めっき、具体的には、数〜十数％のリン（Ｐ）やホウ素（Ｂ）を含有するＮｉ−ＰやＮｉ−Ｂなどのニッケル合金のめっきが施されている。 Moreover, in an aluminum-ceramic bonding substrate for a power module, an aluminum circuit board is often bonded to one surface of the ceramic substrate and a heat sink is bonded to the other surface. In order to install the electrodes on the island shape, the aluminum circuit board contains inexpensive electroless nickel alloy plating, specifically several to tens of percent phosphorus (P) and boron (B) Nickel alloys such as Ni-P and Ni-B are plated.
一方、近年、環境汚染の防止の観点から、電子材料の半田付けにおいてもＰｂフリー化が求められており、特に、Ｐｂフリー半田（実質的に鉛を含まない半田）としてＳｎリッチの半田が使用され始めている On the other hand, in recent years, from the viewpoint of preventing environmental pollution, there has been a demand for Pb-free soldering of electronic materials. In particular, Sn-rich solder is used as Pb-free solder (solder that does not substantially contain lead). Has begun to be
しかし、従来の無電解Ｎｉ−Ｐめっきを施した上に、Ｐｂフリー半田（Ｓｎリッチ半田）によりチップや放熱板を半田付けすると、ヒートサイクルが繰り返された場合などに、半田にクラックが発生したり、チップが破損する場合があり、金属−セラミックス回路基板の信頼性を損なう場合がある。 However, if the chip or heat sink is soldered with Pb-free solder (Sn rich solder) after applying the conventional electroless Ni-P plating, cracks will occur in the solder when the heat cycle is repeated. Or the chip may be damaged, and the reliability of the metal-ceramic circuit board may be impaired.
したがって、本発明は、このような従来の問題点に鑑み、ヒートサイクルが繰り返し加えられても半田クラックの発生やチップの破損を防止することができる、高信頼性の金属−セラミックス接合部材を提供することを目的とする。 Accordingly, the present invention provides a highly reliable metal-ceramic bonding member capable of preventing the occurrence of solder cracks and chip breakage even when heat cycles are repeatedly applied in view of such conventional problems. The purpose is to do.
本発明者らは、上記課題を解決するために鋭意研究した結果、アルミニウムまたはアルミニウム合金からなる金属部材の全面または一部の面に１．０μｍより厚く且つ１５．０μｍ以下の厚さの電気ニッケルめっきを施すことにより、金属−セラミックス接合部材にヒートサイクルが繰り返し加えられても半田クラックの発生やチップの破損を防止することができることを見出し、本発明を完成するに至った。 As a result of diligent research to solve the above-mentioned problems, the present inventors have found that the nickel or aluminum alloy is thicker than 1.0 μm and less than 15.0 μm thick on the entire surface or a part of the surface of the metal member made of aluminum or aluminum alloy. By performing plating, it was found that even if a heat cycle is repeatedly applied to the metal / ceramic bonding member, it is possible to prevent the occurrence of solder cracks and breakage of the chip, and the present invention has been completed.
すなわち、本発明による金属−セラミックス接合部材は、アルミニウムまたはアルミニウム合金からなる金属部材がセラミックス部材に接合した金属−セラミックス接合部材において、金属部材の全面または一部の面に１．０μｍより厚く且つ１５．０μｍ以下の厚さの電気ニッケルめっきが施されていることを特徴とする。この金属−セラミックス接合部材において、電気ニッケルめっきの厚さが１．５〜１５．０μｍであるのが好ましく、２．０〜１０．０μｍであるのがさらに好ましい。また、電気ニッケルめっき上に半田が付けられており、半田によりチップ部品または放熱板が半田付けされているのが好ましい。この半田は実質的に鉛を含まない半田であるのが好ましい。また、アルミニウム合金は、アルミニウム−シリコン系合金、アルミニウム−銅系合金、アルミニウム−マグネシウム系合金、アルミニウム−シリコン−ボロン系合金またはアルミニウム−マグネシウム−シリコン系合金であるのが好ましい。さらに、上記の金属−セラミックス接合部材は、金属部材が回路形状に形成されて、回路基板として使用することができる。 That is, the metal-ceramic bonding member according to the present invention is a metal-ceramic bonding member in which a metal member made of aluminum or an aluminum alloy is bonded to a ceramic member. Electro nickel plating having a thickness of 0.0 μm or less is applied. In this metal-ceramic bonding member, the thickness of the electronickel plating is preferably 1.5 to 15.0 μm, and more preferably 2.0 to 10.0 μm. Moreover, it is preferable that solder is applied on the electric nickel plating, and the chip component or the heat radiating plate is soldered by the solder. This solder is preferably a lead-free solder. The aluminum alloy is preferably an aluminum-silicon alloy, an aluminum-copper alloy, an aluminum-magnesium alloy, an aluminum-silicon-boron alloy, or an aluminum-magnesium-silicon alloy. Furthermore, the metal-ceramic bonding member can be used as a circuit board by forming the metal member in a circuit shape.
本発明によれば、金属−セラミックス接合部材にヒートサイクルが繰り返し加えられても、めっきの剥離を防止し、半田クラックの発生やチップの破損を防止することができる。 According to the present invention, even if a heat cycle is repeatedly applied to the metal / ceramic bonding member, it is possible to prevent the peeling of the plating and to prevent the occurrence of solder cracks and the breakage of the chip.
本発明による金属−セラミックス接合部材の実施の形態では、アルミニウムまたはアルミニウム合金からなる金属部材がセラミックス部材に接合した金属−セラミックス接合部材において、金属部材の全面または一部の面に１μｍより厚く且つ１５μｍ以下、好ましくは１．５〜１５μｍ、さらに好ましくは２〜１０μｍの厚さの電気ニッケルめっきが施されている。電気ニッケルめっきの厚さが１μｍ以下であると、チップなどを半田付けした場合に、半田のＳｎがＮｉめっき層を拡散し、金属部材中のＡｌと反応して脆化層を形成し、めっきの剥離などの不具合を生じ、一方、電気ニッケルめっきの厚さが１５μｍより厚いと、めっきを施すコストが高くなり、また、Ｎｉめっき層はＡｌと比べて硬いので、チップなどを半田付けした場合に、ヒートサイクル後に半田クラックの発生やチップの破損のおそれがあるからである。 In the embodiment of the metal-ceramic bonding member according to the present invention, in the metal-ceramic bonding member in which a metal member made of aluminum or an aluminum alloy is bonded to the ceramic member, the entire or a part of the surface of the metal member is thicker than 1 μm and 15 μm. Hereinafter, electro nickel plating with a thickness of preferably 1.5 to 15 μm, more preferably 2 to 10 μm is applied. When the thickness of the electro nickel plating is 1 μm or less, when a chip or the like is soldered, the Sn of the solder diffuses in the Ni plating layer and reacts with Al in the metal member to form an embrittlement layer. On the other hand, if the thickness of the electro nickel plating is larger than 15 μm, the cost of plating increases, and the Ni plating layer is harder than Al, so when soldering a chip or the like In addition, solder cracks and chip damage may occur after the heat cycle.
金属部材は、アルミニウムまたはアルミニウム合金からなり、アルミニウム合金は、アルミニウム−シリコン系合金、アルミニウム−銅系合金、アルミニウム−マグネシウム系合金、アルミニウム−シリコン−ボロン系合金またはアルミニウム−マグネシウム−シリコン系合金であるのが好ましい。また、金属部材をセラミックス部材に接合したときや、接合部材にヒートサイクルが加わったときに、熱膨張差による応力が発生してセラミックス部材にクラックが発生するのを防止するため、金属部材がビッカース硬度Ｈｖ２０〜４０程度の比較的柔らかい部材であるのが好ましい。 The metal member is made of aluminum or an aluminum alloy, and the aluminum alloy is an aluminum-silicon alloy, an aluminum-copper alloy, an aluminum-magnesium alloy, an aluminum-silicon-boron alloy, or an aluminum-magnesium-silicon alloy. Is preferred. In addition, when a metal member is joined to a ceramic member or when a heat cycle is applied to the joined member, the metal member is made to prevent Vickers stress from being generated due to the difference in thermal expansion. A relatively soft member having a hardness of about Hv 20 to 40 is preferable.
セラミックス部材は、アルミナ、窒化アルミニウム、窒化珪素、炭化珪素などを主成分とする部材であるのが好ましい。 The ceramic member is preferably a member mainly composed of alumina, aluminum nitride, silicon nitride, silicon carbide or the like.
金属部材とセラミックス部材との接合には、ろう材接合法、直接接合法または溶湯接合法のいずれの接合法を使用してもよいが、柔らかく硬度が低い金属部材を得るためには溶湯接合法を使用するのが好ましい。 For joining the metal member and the ceramic member, any of the brazing material joining method, the direct joining method or the molten metal joining method may be used, but in order to obtain a soft and low hardness metal member, the molten metal joining method is used. Is preferably used.
ニッケルめっきは、合金ではない電気ニッケルめっきであるのが好ましく、Ｐを含まないめっきであるのが好ましい。無電解Ｎｉ−Ｐめっきを使用すると、ヒートサイクル後に、Ｐがリッチな層が発生して、めっきの剥離の原因になるからである。また、電気ニッケルめっきの組成は、ニッケルを９９．５％以上含む組成が好ましい。 The nickel plating is preferably an electro nickel plating which is not an alloy, and is preferably a plating containing no P. This is because, when electroless Ni—P plating is used, a P-rich layer is generated after the heat cycle, causing peeling of the plating. Moreover, the composition of electro nickel plating is preferably a composition containing 99.5% or more of nickel.
電気ニッケルめっき上にチップなどを半田付けするのに使用する半田は、通常のＳｎ／Ｐｂ系の半田でもよいが、実質的に鉛を含まない半田（Ｐｂフリー半田）を使用する場合に、本発明による効果が最も顕著に現れる。Ｐｂフリー半田には、Ｓｎ／Ａｇ系やＳｎ／Ａｇ／Ｃｕ系などの半田があり、いずれの半田も従来の半田より融点が高い。また、Ｐｂフリー半田は、Ｓｎリッチの組成であり、このＳｎがニッケルめっき層を拡散し、さらに金属部材のＡｌと反応することによって脆化層を形成し、めっきの剥離の原因になり易く、また、ヒートサイクル後に半田クラックの発生やチップの破損の原因にもなると考えられる。このようなＳｎの拡散を防止するために、本発明による金属−セラミックス接合部材の実施の形態では、金属部材上に所定の厚さの電気ニッケルめっきを施している。 The solder used for soldering the chip or the like on the electro nickel plating may be an ordinary Sn / Pb solder, but this solder is used when a solder containing substantially no lead (Pb-free solder) is used. The effect of the invention is most noticeable. Pb-free solder includes Sn / Ag-based and Sn / Ag / Cu-based solders, and each solder has a higher melting point than conventional solder. Pb-free solder has a Sn-rich composition. This Sn diffuses in the nickel plating layer and further reacts with Al of the metal member to form an embrittlement layer, which easily causes peeling of the plating. It is also considered that it may cause solder cracks and chip damage after the heat cycle. In order to prevent such diffusion of Sn, in the embodiment of the metal / ceramic bonding member according to the present invention, electronickel plating having a predetermined thickness is applied on the metal member.
以下、添付図面を参照して、本発明による金属−セラミックス接合部材の実施例について詳細に説明する。 Hereinafter, embodiments of a metal-ceramic bonding member according to the present invention will be described in detail with reference to the accompanying drawings.
［実施例１］
図１〜図５に示すように、セラミックス基板１０として１００ｍｍ×１００ｍｍ×０．６３５ｍｍの大きさの窒化アルミニウム（ＡｌＮ）基板を用意し（図１参照）、溶湯接合法により厚さ０．４ｍｍの純アルミニウムからなる金属板１２をＡｌＮ基板１０に接合して研磨した（図２参照）後、アルカリ剥離タイプのレジスト（三井化学（株）製のＭＴ−ＵＶ−５２０３Ｐ）１４を回路パターン形状にスクリーン印刷して硬化させ（図３参照）、塩化鉄溶液により不要部分をエッチング除去して回路を形成し（図４参照）、３％ＮａＯＨ溶液によりレジスト１４を剥離して金属−セラミックス回路基板を作製した（図５参照）。
[Example 1]
As shown in FIGS. 1 to 5, an aluminum nitride (AlN) substrate having a size of 100 mm × 100 mm × 0.635 mm is prepared as a ceramic substrate 10 (see FIG. 1), and a thickness of 0.4 mm is obtained by a molten metal bonding method. A
このようにして作製した金属−セラミックス回路基板を、アルミニウム用の脱脂液（上村工業（株）製のＵＡ−６８を５０ｇ／Ｌ含む）に５０℃で５分間浸漬して脱脂処理を行った後、アルミニウム用の化学研磨液（上村工業（株）製のＡＺ−１０２を５０ｇ／Ｌ含む）に５７℃で３分間浸漬して化学研磨処理を行った。次に、この化学研磨処理後の基板を、０．５Ｌ／Ｌの硝酸を含む水溶液に室温で３０秒間浸漬して酸洗して水洗した後、亜鉛置換液（上村工業（株）製のＡＺ−３０１−３Ｘを０．３３Ｌ／Ｌ含む）に室温で３０秒間浸漬して亜鉛置換処理を行って水洗した。さらに、この亜鉛置換処理後の基板を、０．５Ｌ／Ｌの硝酸を含む水溶液に室温で２０秒間浸漬して酸洗して水洗した後、亜鉛置換液（上村工業（株）製のＡＺ−３０１−３Ｘを０．３３Ｌ／Ｌ含む）に室温で２０秒間浸漬して再び亜鉛置換処理を行って水洗した。 After the metal-ceramic circuit board thus fabricated is degreased by immersing it in a degreasing solution for aluminum (containing 50 g / L of UA-68 manufactured by Uemura Kogyo Co., Ltd.) at 50 ° C. for 5 minutes. Then, chemical polishing was performed by immersing in aluminum chemical polishing liquid (containing 50 g / L of AZ-102 manufactured by Uemura Kogyo Co., Ltd.) at 57 ° C. for 3 minutes. Next, the substrate after this chemical polishing treatment was immersed in an aqueous solution containing 0.5 L / L nitric acid for 30 seconds at room temperature, pickled and washed with water, and then a zinc replacement solution (AZ manufactured by Uemura Kogyo Co., Ltd.). -301-3X was contained in 0.33 L / L) for 30 seconds at room temperature, followed by zinc replacement treatment and water washing. Further, the substrate after the zinc substitution treatment was immersed in an aqueous solution containing 0.5 L / L nitric acid at room temperature for 20 seconds, pickled and washed with water, and then the zinc substitution solution (AZ- manufactured by Uemura Kogyo Co., Ltd.). 301-3X was contained in 0.33 L / L) for 20 seconds at room temperature, followed by zinc replacement treatment and washing with water.
その後、硫酸ニッケル（３００ｇ／Ｌ）と塩化ニッケル（４５ｇ／Ｌ）とホウ酸（３０ｇ／Ｌ）を含むめっき浴（ワット浴）中に、上記の前処理を行った基板を浸漬するとともに、アノードとしてＮｉ板を浸漬し、浴温を５０℃に保持し、電流密度を１０Ａ／ｄｍ２に設定し、電解時間を１分間として、図６に示すように、アルミニウムからなる金属板１２上に厚さ２μｍの電気ニッケルめっき１６を施した。 Thereafter, the pretreated substrate was immersed in a plating bath (Watt bath) containing nickel sulfate (300 g / L), nickel chloride (45 g / L), and boric acid (30 g / L). As shown in FIG. 6, the Ni plate is immersed, the bath temperature is maintained at 50 ° C., the current density is set to 10 A / dm 2 , and the electrolysis time is 1 minute. Electro nickel plating 16 having a thickness of 2 μm was applied.
このようにめっきを施した金属板１２上にＳｎを含有する半田によりチップを半田付けした後、断面をＥＰＭＡ（Ｅｌｅｃｔｒｏｎ Ｐｒｏｂｅ Ｍｉｃｒｏ Ａｎａｌｙｚｅｒ）で観察したところ、半田に含まれるＳｎがアルミニウムに拡散していなかった。また、上記の金属板１２上にめっきを施した金属−セラミックス回路基板について、１２５℃×３０分→室温×１０分→−４０℃×３０分→室温×１０分を１サイクルとするヒートサイクルを３００回行ったところ、半田クラックの発生やチップの破損などの異常はなかった。
After soldering the chip with the solder containing Sn on the
［実施例２］
電解時間を２．５分間にして厚さ５μｍの電気ニッケルめっきを施した以外は実施例１と同様の方法により、金属板上に電気ニッケルめっきを施し、チップを半田付けした後、断面をＥＰＭＡで観察したところ、半田に含まれるＳｎがアルミニウムに拡散していなかった。また、実施例１と同様のヒートサイクル試験を行ったところ、半田クラックの発生やチップの破損などの異常はなかった。
[Example 2]
Electroless nickel plating was performed on the metal plate by the same method as in Example 1 except that the electrolysis time was 2.5 minutes and the nickel electroplating was performed with a thickness of 5 μm. When Sn was observed, Sn contained in the solder was not diffused into the aluminum. Further, when a heat cycle test similar to that of Example 1 was performed, there was no abnormality such as generation of solder cracks or chip breakage.
［比較例１］
電解時間を３０秒間にして厚さ１μｍの電気ニッケルめっきを施した以外は実施例１と同様の方法により、金属板上に電気ニッケルめっきを施し、チップを半田付けした後、断面をＥＰＭＡで観察したところ、半田に含まれるＳｎがアルミニウムに拡散しているのが確認された。また、実施例１と同様のヒートサイクル試験を行ったところ、半田クラックが発生し、チップが破損していた。
[Comparative Example 1]
Electrolytic nickel plating was performed on the metal plate by the same method as in Example 1 except that electrolysis time was 30 seconds and electroplating was performed with a thickness of 1 μm. After the chip was soldered, the cross section was observed with EPMA. As a result, it was confirmed that Sn contained in the solder diffused into the aluminum. Moreover, when the same heat cycle test as Example 1 was done, the solder crack occurred and the chip | tip was damaged.
［実施例３］
実施例１の亜鉛置換法による前処理（活性化処理）に代えてパラジウム活性化法による前処理を行った以外は実施例１と同様の方法により、金属板上に厚さ２μｍの電気ニッケルめっきを施した金属−セラミックス回路基板を作製した。この実施例の前処理では、アルミニウム用の脱脂液（上村工業（株）製のＬＣＬ−１Ｅを７．５重量％含む）に４０℃で５分間浸漬して脱脂処理を行い、アルミニウム用の化学研磨液（上村工業（株）製のＡＤ−１０１Ｆを１０重量％含む）に７０℃で５分間浸漬して化学研磨処理を行った後、１０重量％のパラジウム活性化液（上村工業（株）製のＡＴ−３６０）と１．５重量％の塩酸を含む水溶液に２３℃で２分間浸漬してパラジウム活性化処理を行った。この実施例で作製した金属−セラミックス回路基板にＳｎを含有する半田によりチップを半田付けした後、断面をＥＰＭＡで観察したところ、半田に含まれるＳｎがアルミニウムに拡散していなかった。また、実施例１と同様のヒートサイクル試験を行ったところ、半田クラックの発生やチップの破損などの異常はなかった。
[Example 3]
Electronickel plating with a thickness of 2 μm on the metal plate was performed in the same manner as in Example 1 except that the pretreatment by the palladium activation method was performed instead of the pretreatment (activation treatment) by the zinc substitution method of Example 1. The metal-ceramic circuit board which gave this was produced. In the pretreatment of this example, degreasing treatment was performed by immersing in an aluminum degreasing solution (containing 7.5% by weight of LCL-1E manufactured by Uemura Kogyo Co., Ltd.) at 40 ° C. for 5 minutes. A chemical polishing treatment was performed by immersing in an abrasive solution (containing 10% by weight of AD-101F manufactured by Uemura Kogyo Co., Ltd.) at 70 ° C. for 5 minutes, and then a 10% by weight palladium activation solution (Uemura Industrial Co., Ltd.). Palladium activation treatment was performed by immersing in an aqueous solution containing AT-360) and 1.5 wt% hydrochloric acid at 23 ° C. for 2 minutes. After the chip was soldered to the metal-ceramic circuit board fabricated in this example with solder containing Sn, the cross section was observed with EPMA. As a result, Sn contained in the solder was not diffused into the aluminum. Further, when a heat cycle test similar to that of Example 1 was performed, there was no abnormality such as generation of solder cracks or chip breakage.
［実施例４］
電解時間を２．５分間にして厚さ５μｍの電気ニッケルめっきを施した以外は実施例３と同様の方法により、金属板上に電気ニッケルめっきを施し、チップを半田付けした後、断面をＥＰＭＡで観察したところ、半田に含まれるＳｎがアルミニウムに拡散していなかった。また、実施例１と同様のヒートサイクル試験を行ったところ、半田クラックの発生やチップの破損などの異常はなかった。
[Example 4]
Except that electroless nickel plating with a thickness of 5 μm was performed with an electrolysis time of 2.5 minutes, electronickel plating was performed on the metal plate by the same method as in Example 3 and the chip was soldered. When Sn was observed, Sn contained in the solder was not diffused into the aluminum. Further, when a heat cycle test similar to that of Example 1 was performed, there was no abnormality such as generation of solder cracks or chip breakage.
［比較例２］
電解時間を３０秒間にして厚さ１μｍの電気ニッケルめっきを施した以外は実施例３と同様の方法により、金属板上に電気ニッケルめっきを施し、チップを半田付けした後、断面をＥＰＭＡで観察したところ、半田に含まれるＳｎがアルミニウムに拡散しているのが確認された。また、実施例１と同様のヒートサイクル試験を行ったところ、半田クラックが発生し、チップが破損していた。
[Comparative Example 2]
Electrolytic nickel plating was performed on the metal plate by the same method as in Example 3 except that electrolytic nickel plating was performed for 30 seconds and the thickness was 1 μm. After the chip was soldered, the cross section was observed with EPMA. As a result, it was confirmed that Sn contained in the solder diffused into the aluminum. Moreover, when the same heat cycle test as Example 1 was done, the solder crack occurred and the chip | tip was damaged.
［比較例３］
実施例１の電気ニッケルめっきに代えて無電解Ｎｉ−Ｐめっきを施した以外は実施例１と同様の方法により、金属板上に厚さ１μｍの無電解Ｎｉ−Ｐめっきを施した金属−セラミックス回路基板を作製した。この比較例の無電解Ｎｉ−Ｐめっきは、１０重量％のＳＸ−Ｍ（上村工業（株）製）と５．５重量％のＳＸ−Ａ（上村工業（株）製）を含むめっき浴中に、８９℃で３分間浸漬することによって行った。この比較例で作製した金属−セラミックス回路基板にＳｎを含有する半田によりチップを半田付けした後、断面をＥＰＭＡで観察したところ、半田に含まれるＳｎがアルミニウムに拡散しているのが確認された。また、実施例１と同様のヒートサイクル試験を行ったところ、半田クラックが発生し、チップが破損していた。
[Comparative Example 3]
A metal-ceramic obtained by electroless Ni-P plating having a thickness of 1 μm on a metal plate in the same manner as in Example 1 except that electroless Ni—P plating was applied instead of the electrolytic nickel plating of Example 1. A circuit board was produced. The electroless Ni—P plating of this comparative example is in a plating bath containing 10% by weight of SX-M (manufactured by Uemura Kogyo Co., Ltd.) and 5.5% by weight of SX-A (manufactured by Uemura Kogyo Co., Ltd.). And by immersing at 89 ° C. for 3 minutes. After the chip was soldered to the metal-ceramic circuit board produced in this comparative example with solder containing Sn, the cross section was observed with EPMA, and it was confirmed that Sn contained in the solder diffused into the aluminum. . Moreover, when the same heat cycle test as Example 1 was done, the solder crack occurred and the chip | tip was damaged.
［比較例４］
浸漬時間を６分間にして厚さ２μｍの無電解Ｎｉ−Ｐめっきを施した以外は比較例３と同様の方法により、金属板上に無電解Ｎｉ−Ｐめっきを施し、チップを半田付けした後、断面をＥＰＭＡで観察したところ、半田に含まれるＳｎがアルミニウムに拡散しているのが確認された。また、実施例１と同様のヒートサイクル試験を行ったところ、半田クラックが発生し、チップが破損していた。
[Comparative Example 4]
After applying electroless Ni-P plating on the metal plate and soldering the chip by the same method as in Comparative Example 3 except that the immersion time was 6 minutes and electroless Ni-P plating having a thickness of 2 μm was applied. When the cross section was observed with EPMA, it was confirmed that Sn contained in the solder was diffused in the aluminum. Moreover, when the same heat cycle test as Example 1 was done, the solder crack occurred and the chip | tip was damaged.
［比較例５］
浸漬時間を１５分間にして厚さ５μｍの無電解Ｎｉ−Ｐめっきを施した以外は比較例３と同様の方法により、金属板上に無電解Ｎｉ−Ｐめっきを施し、チップを半田付けした後、断面をＥＰＭＡで観察したところ、半田に含まれるＳｎがアルミニウムに拡散しているのが確認された。また、実施例１と同様のヒートサイクル試験を行ったところ、半田クラックが発生し、チップが破損していた。
[Comparative Example 5]
After electroless Ni-P plating on the metal plate and soldering the chip by the same method as in Comparative Example 3 except that the immersion time was 15 minutes and electroless Ni-P plating having a thickness of 5 μm was applied. When the cross section was observed with EPMA, it was confirmed that Sn contained in the solder was diffused in the aluminum. Moreover, when the same heat cycle test as Example 1 was done, the solder crack occurred and the chip | tip was damaged.
［比較例６］
実施例３の電気ニッケルめっきに代えて比較例３の無電解Ｎｉ−Ｐめっきを行った以外は実施例３と同様の方法により、金属板上に厚さ１μｍの無電解Ｎｉ−Ｐめっきを施し、チップを半田付けした後、断面をＥＰＭＡで観察したところ、半田に含まれるＳｎがアルミニウムに拡散しているのが確認された。また、実施例１と同様のヒートサイクル試験を行ったところ、半田クラックが発生し、チップが破損していた。
[Comparative Example 6]
The electroless Ni-P plating having a thickness of 1 μm was applied on the metal plate in the same manner as in Example 3 except that the electroless Ni—P plating in Comparative Example 3 was performed instead of the electro nickel plating in Example 3. After soldering the chip, the cross section was observed with EPMA, and it was confirmed that Sn contained in the solder was diffused into the aluminum. Moreover, when the same heat cycle test as Example 1 was done, the solder crack occurred and the chip | tip was damaged.
［比較例７］
浸漬時間を６分間にして厚さ２μｍの無電解Ｎｉ−Ｐめっきを施した以外は比較例６と同様の方法により、金属板上に無電解Ｎｉ−Ｐめっきを施し、チップを半田付けした後、断面をＥＰＭＡで観察したところ、半田に含まれるＳｎがアルミニウムに拡散しているのが確認された。また、実施例１と同様のヒートサイクル試験を行ったところ、半田クラックが発生し、チップが破損していた。
[Comparative Example 7]
After applying electroless Ni-P plating on the metal plate and soldering the chip by the same method as in Comparative Example 6 except that the immersion time was 6 minutes and electroless Ni-P plating having a thickness of 2 μm was applied. When the cross section was observed with EPMA, it was confirmed that Sn contained in the solder was diffused in the aluminum. Moreover, when the same heat cycle test as Example 1 was done, the solder crack occurred and the chip | tip was damaged.
［比較例８］
浸漬時間を１５分間にして厚さ５μｍの無電解Ｎｉ−Ｐめっきを施した以外は比較例６と同様の方法により、金属板上に無電解Ｎｉ−Ｐめっきを施し、チップを半田付けした後、断面をＥＰＭＡで観察したところ、半田に含まれるＳｎがアルミニウムに拡散しているのが確認された。また、実施例１と同様のヒートサイクル試験を行ったところ、半田クラックが発生し、チップが破損していた。
[Comparative Example 8]
After applying electroless Ni-P plating on the metal plate and soldering the chip by the same method as in Comparative Example 6 except that the immersion time was 15 minutes and electroless Ni-P plating having a thickness of 5 μm was applied. When the cross section was observed with EPMA, it was confirmed that Sn contained in the solder was diffused in the aluminum. Moreover, when the same heat cycle test as Example 1 was done, the solder crack occurred and the chip | tip was damaged.
これらの実施例１〜４および比較例１〜８の結果を表１に示す。 Table 1 shows the results of Examples 1 to 4 and Comparative Examples 1 to 8.
表１に示すように、アルミニウムからなる金属板上に１μｍを超える厚さ、好ましくは２〜５μｍの厚さの電気ニッケルめっきを施すことにより、Ｓｎを含有する半田によりチップを金属板に半田付けした後に、半田に含まれるＳｎがアルミニウムに拡散するのを防止することができるとともに、ヒートサイクル後の半田クラックの発生やチップの破損を防止することができる。 As shown in Table 1, by applying nickel electroplating with a thickness exceeding 1 μm, preferably 2-5 μm, onto a metal plate made of aluminum, the chip is soldered to the metal plate with solder containing Sn. Then, Sn contained in the solder can be prevented from diffusing into the aluminum, and solder cracks and chip damage after the heat cycle can be prevented.
１０ セラミックス基板
１２ 金属板
１４ レジスト
１６ 電気ニッケルめっき
10
Claims (8)
The metal-ceramic bonding member according to claim 1, wherein the metal member is formed in a circuit shape and used as a circuit board.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007180399A (en) * | 2005-12-28 | 2007-07-12 | Dowa Holdings Co Ltd | Metal-ceramics circuit board and manufacturing method thereof |
| JP2012244131A (en) * | 2011-05-24 | 2012-12-10 | Mitsubishi Materials Corp | Substrate for power module and method of manufacturing the same |
| JP2014203880A (en) * | 2013-04-02 | 2014-10-27 | 三菱マテリアル株式会社 | Method for manufacturing substrate for power module |
| JP2019141879A (en) * | 2018-02-21 | 2019-08-29 | Ｄｏｗａメタルテック株式会社 | Aluminum-ceramic bonded substrate and method for manufacturing same |
| JP7358123B2 (en) | 2019-09-03 | 2023-10-10 | Ｄｏｗａメタルテック株式会社 | Metal-ceramic circuit board and its manufacturing method |
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2004
- 2004-03-31 JP JP2004102936A patent/JP4362600B2/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007180399A (en) * | 2005-12-28 | 2007-07-12 | Dowa Holdings Co Ltd | Metal-ceramics circuit board and manufacturing method thereof |
| JP2012244131A (en) * | 2011-05-24 | 2012-12-10 | Mitsubishi Materials Corp | Substrate for power module and method of manufacturing the same |
| JP2014203880A (en) * | 2013-04-02 | 2014-10-27 | 三菱マテリアル株式会社 | Method for manufacturing substrate for power module |
| JP2019141879A (en) * | 2018-02-21 | 2019-08-29 | Ｄｏｗａメタルテック株式会社 | Aluminum-ceramic bonded substrate and method for manufacturing same |
| JP7062464B2 (en) | 2018-02-21 | 2022-05-06 | Ｄｏｗａメタルテック株式会社 | Aluminum-ceramic bonded substrate and its manufacturing method |
| JP7358123B2 (en) | 2019-09-03 | 2023-10-10 | Ｄｏｗａメタルテック株式会社 | Metal-ceramic circuit board and its manufacturing method |
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