JP2005268814A5 - - Google Patents

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Publication number
JP2005268814A5
JP2005268814A5 JP2005119658A JP2005119658A JP2005268814A5 JP 2005268814 A5 JP2005268814 A5 JP 2005268814A5 JP 2005119658 A JP2005119658 A JP 2005119658A JP 2005119658 A JP2005119658 A JP 2005119658A JP 2005268814 A5 JP2005268814 A5 JP 2005268814A5
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JP
Japan
Prior art keywords
semiconductor region
imaging device
solid
conductivity type
state imaging
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Pending
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JP2005119658A
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Japanese (ja)
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JP2005268814A (en
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Priority to JP2005119658A priority Critical patent/JP2005268814A/en
Priority claimed from JP2005119658A external-priority patent/JP2005268814A/en
Publication of JP2005268814A publication Critical patent/JP2005268814A/en
Publication of JP2005268814A5 publication Critical patent/JP2005268814A5/ja
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Claims (6)

第1導電型の第1の半導体領域と第1導電型と逆導電型の第2導電型の第2の半導体領域とにより形成されたフォトダイオードと、前記第2の半導体領域がソースもしくはドレイン領域として機能する第2導電型のトランジスタと、を含む画素の複数を有する固体撮像装置において、
隣接する前記フォトダイオード間に、トレンチ内に絶縁膜を形成した素子分離領域が形成されており、前記素子分離領域の側壁に第1導電型の第3の半導体領域が形成され、前記素子分離領域の下部に第1導電型の第4の半導体領域が形成されていることを特徴とする固体撮像装置。
A photodiode formed by a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type opposite to the first conductivity type, and the second semiconductor region is a source or drain region A solid-state imaging device having a plurality of pixels including a second conductivity type transistor functioning as :
An element isolation region in which an insulating film is formed in a trench is formed between the adjacent photodiodes, a first conductivity type third semiconductor region is formed on a side wall of the element isolation region, and the element isolation region A solid-state imaging device, wherein a fourth semiconductor region of the first conductivity type is formed in a lower part of the first imaging device.
前記第4の半導体領域は、深さ方向に複数のイオン注入工程で形成されていることを特徴とする請求項1に記載の固体撮像装置。   The solid-state imaging device according to claim 1, wherein the fourth semiconductor region is formed by a plurality of ion implantation steps in a depth direction. 更に、前記ゲート電極下部の前記第2の半導体領域内に、第2導電型の第5の半導体領域が形成されていることを特徴とする請求項1または2に記載の固体撮像装置。   The solid-state imaging device according to claim 1, wherein a fifth semiconductor region of a second conductivity type is formed in the second semiconductor region below the gate electrode. 前記第5の半導体領域は、深さ方向に複数のイオン注入工程で形成されていることを特徴とする請求項3に記載の固体撮像装置。   The solid-state imaging device according to claim 3, wherein the fifth semiconductor region is formed by a plurality of ion implantation steps in a depth direction. 前記第2の半導体領域が、前記トランジスタのゲート電極下に延在していることを特徴とする請求項1から4のいずれか1項に記載の固体撮像装置。5. The solid-state imaging device according to claim 1, wherein the second semiconductor region extends under a gate electrode of the transistor. 請求項1から5のいずれか1項に記載の固体撮像装置を有することを特徴とするカメラシステム。A camera system comprising the solid-state imaging device according to claim 1.
JP2005119658A 2002-06-27 2005-04-18 Solid state imaging device and camera system using the same Pending JP2005268814A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005119658A JP2005268814A (en) 2002-06-27 2005-04-18 Solid state imaging device and camera system using the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002187682 2002-06-27
JP2002302912 2002-10-17
JP2005119658A JP2005268814A (en) 2002-06-27 2005-04-18 Solid state imaging device and camera system using the same

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2003159403A Division JP3840203B2 (en) 2002-06-27 2003-06-04 Solid-state imaging device and camera system using the solid-state imaging device

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2005273717A Division JP4435063B2 (en) 2002-06-27 2005-09-21 Solid-state imaging device and camera system using the solid-state imaging device
JP2010057729A Division JP5241759B2 (en) 2002-06-27 2010-03-15 Solid-state imaging device

Publications (2)

Publication Number Publication Date
JP2005268814A JP2005268814A (en) 2005-09-29
JP2005268814A5 true JP2005268814A5 (en) 2005-11-10

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005119658A Pending JP2005268814A (en) 2002-06-27 2005-04-18 Solid state imaging device and camera system using the same

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JP (1) JP2005268814A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100708772B1 (en) * 2005-10-07 2007-04-17 주식회사 뮤타스 Image photographing device including diaphragm
JP2010199154A (en) * 2009-02-23 2010-09-09 Canon Inc Solid-state imaging element
JP5539104B2 (en) * 2009-09-24 2014-07-02 キヤノン株式会社 Photoelectric conversion device and imaging system using the same
JP5620087B2 (en) 2009-11-30 2014-11-05 浜松ホトニクス株式会社 Distance sensor and distance image sensor
JP5558859B2 (en) * 2010-02-18 2014-07-23 キヤノン株式会社 Solid-state imaging device and method for manufacturing solid-state imaging device
JP5616170B2 (en) * 2010-09-06 2014-10-29 浜松ホトニクス株式会社 Distance sensor and distance image sensor
JP5632423B2 (en) * 2012-05-29 2014-11-26 浜松ホトニクス株式会社 Distance sensor and distance image sensor
JP2012185174A (en) * 2012-05-29 2012-09-27 Hamamatsu Photonics Kk Distance sensor and distance image sensor

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