JP2005229121A - Device and method of forming wiring - Google Patents

Device and method of forming wiring Download PDF

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JP2005229121A
JP2005229121A JP2005036786A JP2005036786A JP2005229121A JP 2005229121 A JP2005229121 A JP 2005229121A JP 2005036786 A JP2005036786 A JP 2005036786A JP 2005036786 A JP2005036786 A JP 2005036786A JP 2005229121 A JP2005229121 A JP 2005229121A
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copper
substrate
polishing
wiring
film
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JP2005229121A5 (en
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Naoki Matsuda
尚起 松田
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Ebara Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a device and a method for forming wiring that allow successive implemention of a series of processings for forming copper wiring, in which copper is embedded to form copper wiring, while omitting a CMP processing and minimizing the load on the CMP process. <P>SOLUTION: The device for forming copper wiring is adapted, to deposit a film of copper on the surface of a substrate to embed the copper into fine depressions, thereby forming copper wirings. The device is provided with a transport device 26 in a housing 10 adapted to move freely along a transport pathway 25 for transporting the substrate, along which a copper-plating unit 12, electrolytic or chemical polishing units 18 and 20 and an annealing unit 16 are arranged. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、配線形成装置及び方法に係り、特に半導体基板の表面に形成した配線用の窪みの内部に銅（Ｃｕ）を埋め込んで銅配線を形成するのに使用される配線形成装置及び方法に関する。   The present invention relates to a wiring forming apparatus and method, and more particularly to a wiring forming apparatus and method used to form copper wiring by embedding copper (Cu) in a wiring recess formed on the surface of a semiconductor substrate. .

近年、半導体基板上に配線回路を形成するための金属材料として、アルミニウムまたはアルミニウム合金に代えて、電気抵抗率が低くエレクトロマイグレーション耐性が高い銅（Ｃｕ）を用いる動きが顕著になっている。この種の銅配線は、基板の表面に設けた微細凹みの内部に銅を埋込むことによって一般に形成される。この銅配線を形成する方法としては、ＣＶＤ、スパッタリング及びめっきといった手法があるが、いずれにしても、基板のほぼ全表面に銅を成膜し、化学機械的研磨（ＣＭＰ）により不要の銅を除去するようにしている。   In recent years, as a metal material for forming a wiring circuit on a semiconductor substrate, a movement of using copper (Cu) having a low electrical resistivity and a high electromigration resistance instead of aluminum or an aluminum alloy has become prominent. This type of copper wiring is generally formed by embedding copper in a fine recess provided on the surface of the substrate. As a method of forming this copper wiring, there are methods such as CVD, sputtering and plating, but in any case, copper is formed on almost the entire surface of the substrate, and unnecessary copper is removed by chemical mechanical polishing (CMP). Try to remove.

図１８（ａ）〜（ｃ）は、この種の銅配線基板Ｗの製造例を工程順に示すもので、図１８（ａ）に示すように、半導体素子を形成した半導体基材１上の導電層１ａの上にＳｉＯ２からなる酸化膜や他のＬｏｗ−Ｋ材膜２を堆積し、リソグラフィ・エッチング技術によりコンタクトホール３と配線用の溝４を形成し、その上にＴａＮ等からなるバリア膜５、更にその上に電解めっきの給電層としてシード層７を形成する。 FIGS. 18A to 18C show a manufacturing example of this type of copper wiring board W in the order of steps, and as shown in FIG. 18A, the conductivity on the semiconductor substrate 1 on which the semiconductor elements are formed. An oxide film made of SiO 2 or other Low-K material film 2 is deposited on the layer 1a, a contact hole 3 and a wiring groove 4 are formed by lithography / etching technique, and a barrier made of TaN or the like is formed thereon. A seed layer 7 is formed as a power supply layer for electrolytic plating on the film 5.

そして、図１８（ｂ）に示すように、基板Ｗの表面に銅めっきを施すことで、半導体基材１のコンタクトホール３及び溝４内に銅を充填するとともに、酸化膜２上に銅膜６を堆積する。その後、化学機械的研磨（ＣＭＰ）により、酸化膜２上の銅膜６を除去して、コンタクトホール３及び配線用の溝４に充填させた銅膜６の表面と酸化膜２の表面とをほぼ同一平面にする。これにより、図１８（ｃ）に示すように銅膜６からなる配線が形成される。   Then, as shown in FIG. 18B, the contact hole 3 and the groove 4 of the semiconductor substrate 1 are filled with copper by performing copper plating on the surface of the substrate W, and a copper film is formed on the oxide film 2. 6 is deposited. Thereafter, the copper film 6 on the oxide film 2 is removed by chemical mechanical polishing (CMP), and the surface of the copper film 6 filled in the contact hole 3 and the wiring groove 4 and the surface of the oxide film 2 are formed. Make them almost coplanar. As a result, a wiring made of the copper film 6 is formed as shown in FIG.

ところで、図１９に示すように、例えば、直径ｄ１が０．２μｍ程度の微細穴８と、直径ｄ２が１００μｍ程度の大穴９とが混在する基板Ｗの表面に銅めっきを施して銅膜６を形成すると、めっき液や該めっき液に含有される添加剤の働きを最適化したとしても、微細穴８の上ではめっきの成長が促進されて銅膜６が盛り上がる傾向があり、一方、大穴９の内部ではボトムアップ性を高めためっきの成長を行うことができないため、結果として、基板Ｗ上に堆積した銅膜６には、微細穴８上の盛り上がり高さａと、大穴９上の凹み深さｂとをプラスした段差ａ＋ｂが残る。このため、微細穴８及び大穴９の内部に銅を埋込んだ状態で、基板Ｗの表面を平坦化させるには、銅膜６の膜厚を十分に厚くし、しかもＣＭＰで前記段差ａ＋ｂ分余分に研磨する必要があった。 By the way, as shown in FIG. 19, for example, copper plating is performed on the surface of the substrate W in which fine holes 8 having a diameter d 1 of about 0.2 μm and large holes 9 having a diameter d 2 of about 100 μm are mixed to form a copper film. 6, even if the action of the plating solution and the additive contained in the plating solution is optimized, the growth of the plating is promoted on the fine holes 8 and the copper film 6 tends to rise, Since it is not possible to perform the growth of plating with improved bottom-up inside the large hole 9, as a result, the copper film 6 deposited on the substrate W has a raised height a above the fine hole 8 and the large hole 9. A level difference a + b that is a plus of the dent depth b remains. For this reason, in order to flatten the surface of the substrate W in a state where copper is embedded in the fine holes 8 and the large holes 9, the thickness of the copper film 6 is sufficiently increased, and the step a + b is obtained by CMP. It was necessary to polish extra.

しかし、めっき膜のＣＭＰ工程を考えた時、めっき膜厚を厚くして研磨量を多くすればする程、ＣＭＰの加工時間が延びてしまい、これをカバーするためにＣＭＰレートを上げれば、ＣＭＰ加工時に大穴でのディッシングが生じるといった問題があった。   However, when considering the CMP process of the plating film, the CMP processing time increases as the plating film thickness is increased and the polishing amount is increased, and if the CMP rate is increased to cover this, the CMP is increased. There was a problem that dishing in large holes occurred during processing.

つまり、これらを解決するには、めっき膜厚を極力薄くし、基板表面に微細穴と大穴が混在しても、めっき膜の盛り上がりや凹みを無くして、平坦性を上げる必要があるが、例えば硫酸銅浴で電解めっき処理を行った場合、めっき液や添加剤の作用だけで盛り上がりを減らすことと凹みを減らすことを両立することができないのが現状であった。また、積層中のめっき電源を一時逆電解としたり、ＰＲパルス電源とすることで盛り上がりを少なくすることは可能であるが、凹部の解消にはならず、加えて表面の膜質を劣とすることになっていた。   In other words, in order to solve these problems, it is necessary to reduce the plating film thickness as much as possible, and even if fine holes and large holes are mixed on the substrate surface, it is necessary to eliminate the bulge and dent of the plating film and improve the flatness. When electrolytic plating is performed in a copper sulfate bath, it has been impossible at the same time to reduce swell and reduce dents only by the action of the plating solution and additives. In addition, it is possible to reduce the swell by using a reverse reverse electrolysis plating power source or a PR pulse power source during lamination, but it does not eliminate the recesses, but also deteriorates the surface film quality. It was.

更に、ＣＭＰ工程は、一般にかなり複雑な操作が必要で、制御も複雑であるばかりでなく、加工時間もかなり長く、しかもめっき処理と別の装置で一般に行われているため、これを省略することが強く求められていた。
今後、絶縁膜も誘電率の小さいＬｏｗ−Ｋ材に変わると予想され、Ｌｏｗ−Ｋ材にあっては、強度が弱くＣＭＰによるストレスに耐えられなくなるため、非接触で基板にストレスを与えることなく平坦化できるようにしたプロセスが望まれている。
なお、化学機械的電解研磨のように、めっきをしながらＣＭＰで削るというプロセスも発表されているが、めっき成長面に機械加工が付加されることで、めっきの異常成長を促すことにもなり、膜質に問題を起こしていた。 Furthermore, the CMP process generally requires a considerably complicated operation, is not only complicated in control, but also has a long processing time, and is generally performed in a separate apparatus from the plating process, so that this is omitted. Was strongly sought after.
In the future, it is expected that the insulating film will also be changed to a low-K material having a low dielectric constant. The low-K material has low strength and cannot withstand stress caused by CMP. A process that enables flattening is desired.
In addition, a process of cutting with CMP while plating, such as chemical mechanical electropolishing, has been announced, but by adding machining to the plating growth surface, it will also promote abnormal growth of plating. It was causing problems with the film quality.

本発明は上記に鑑みて為されたもので、ＣＭＰ処理そのものを省略したり、ＣＭＰ処理の負荷を極力低減しつつ、銅を埋込んで銅配線を形成する一連の銅配線形成工程を連続的に行えるようにした配線形成装置及び方法を提供することを目的とする。   The present invention has been made in view of the above, and a series of copper wiring forming steps in which copper wiring is formed by embedding copper while omitting the CMP process itself or reducing the load of the CMP process as much as possible are continuously performed. It is an object of the present invention to provide a wiring forming apparatus and method which can be performed easily.

請求項１に記載の発明は、基板の表面に銅を成膜して該銅を微細窪み内に埋込んだ銅配線を形成する配線形成装置であって、ハウジングの内部に、基板を搬送する搬送経路に沿って走行自在な搬送装置を設け、この搬送経路に沿って、銅めっき処理部、電解または化学研磨処理部及びアニール処理部を配置したことを特徴とする配線形成装置である。   The invention according to claim 1 is a wiring forming apparatus for forming copper wiring on the surface of a substrate and forming a copper wiring in which the copper is embedded in a fine recess, and transports the substrate into the housing. A wiring forming apparatus characterized in that a transport device that can travel along a transport path is provided, and a copper plating processing section, an electrolytic or chemical polishing processing section, and an annealing processing section are disposed along the transport path.

これにより、銅めっき処理後の平坦化プロセスを主に電解または化学研磨で行うことで、ＣＭＰ処理自体を省略するか、またはＣＭＰ処理の負荷を低減し、アニールを含めた一連の平坦化プロセスを同一ハウジング内で連続的に行うことができる。   As a result, the planarization process after the copper plating process is mainly performed by electrolytic or chemical polishing, thereby omitting the CMP process itself or reducing the CMP process load and performing a series of planarization processes including annealing. It can be carried out continuously in the same housing.

請求項２に記載の発明は、基板の洗浄を行う洗浄処理部を配置したことを特徴とする請求項１記載の配線形成装置である。   According to a second aspect of the present invention, there is provided the wiring forming apparatus according to the first aspect, wherein a cleaning processing unit for cleaning the substrate is disposed.

請求項３に記載の発明は、第１段の電解または化学研磨処理と、第２段の電解または化学研磨処理を行う少なくとも２つの研磨処理部を有することを特徴とする請求項１または２記載の配線形成装置である。
これにより、銅の表面に研磨レートや、下地への選択性研磨の異なる２段の電解研磨または化学研磨を施すことで、銅の表面をより平坦に研磨したり、また第１段の電解研磨または化学研磨で銅の表面を研磨し、第２段の電解研磨または化学研磨で表面が露出している銅と他の導電性物質（例えば、ＴａＮ）を研磨レートで均一に研磨するようにすることができる。 The invention described in claim 3 has at least two polishing processing units for performing the first stage electrolysis or chemical polishing process and the second stage electrolysis or chemical polishing process. This is a wiring forming apparatus.
As a result, the copper surface can be polished more flatly by subjecting the copper surface to two-stage electropolishing or chemical polishing with different polishing rates and selective polishing to the base, or the first-stage electropolishing. Alternatively, the surface of copper is polished by chemical polishing, and copper and other conductive materials (for example, TaN) whose surface is exposed are polished uniformly at the polishing rate by second-stage electropolishing or chemical polishing. be able to.

請求項４に記載の発明は、前記ハウジングの内部に、前記銅配線の露出表面を選択的に覆って保護する保護膜を形成する蓋めっき処理部を配置したことを特徴とする請求項１乃至３のいずれかに記載の配線形成装置である。
これにより、外部に露出した銅配線の表面を保護膜で選択的に覆って保護する蓋めっき処理を同一ハウジング内で連続して行うことができる。 According to a fourth aspect of the present invention, a lid plating treatment part for forming a protective film for selectively covering and protecting the exposed surface of the copper wiring is disposed inside the housing. 4. The wiring forming apparatus according to claim 3.
Thereby, the lid plating process which selectively covers and protects the surface of the copper wiring exposed to the outside with the protective film can be continuously performed in the same housing.

請求項５に記載の発明は、基板の表面に銅を成膜して該銅を微細窪み内に埋込んだ銅配線を形成するにあたり、基板の表面に銅を成膜する工程と、この銅を成膜した基板の表面を研磨液中で電解または化学研磨する研磨処理工程と、この研磨後の基板表面を洗浄し乾燥させる工程と、研磨処理工程後に銅膜を基板全面に残した状態で基板に熱処理を施すアニール工程とを有することを特徴とする配線形成方法である。このようにして、ウェット処理の後ドライ処理を行い、装置的にウェットとドライ処理部分を分けることができるメリットを有するが、成膜→アニール→電解／化学研磨→ＣＭＰの順に処理することもできる。   According to the fifth aspect of the present invention, a copper film is formed on the surface of the substrate, and a copper wiring is formed by embedding the copper in a fine recess. A polishing process step of electrolytically or chemically polishing the surface of the substrate on which the film is formed in a polishing liquid, a step of cleaning and drying the surface of the substrate after polishing, and a state in which the copper film remains on the entire surface of the substrate after the polishing process step And a wiring forming method characterized by comprising an annealing step of performing a heat treatment on the substrate. In this way, there is a merit that the wet process and the dry process can be performed after the wet process, and the wet process and the dry process part can be separated from each other. .

本発明によれば、銅めっき処理後の平坦化プロセスを主に電解または化学研磨で行うことで、ＣＭＰ処理自体を省略するか、またはＣＭＰ処理の負荷を低減し、しかも、最後の仕上げのみをＣＭＰ処理に依存する場合を除き、アニールを含めた一連の平坦化プロセスを同一ハウジング内で連続的に行うことができる。   According to the present invention, the planarization process after the copper plating process is mainly performed by electrolytic or chemical polishing, so that the CMP process itself is omitted or the load of the CMP process is reduced, and only the final finish is performed. Except when relying on CMP processing, a series of planarization processes including annealing can be performed continuously in the same housing.

以下、本発明の実施の形態を図面を参照して説明する。
図１は、本発明の実施の形態の配線形成装置の平面配置図を示す。この配線形成装置は、ハウジング１０の内部に位置して、ロード・アンロード部１１と、このロード・アンロード部１１の反対側から順に配置された銅めっき処理部１２、洗浄・乾燥処理部１４、アニール処理部１６、第１の電解または化学研磨処理部１８、第２の電解または化学研磨処理部２０及び洗浄・乾燥処理部２２とを有し、これらの各機器を挟んだ位置に、前処理部２４ａ、Ｐｄ付着部２４ｂ、めっき前処理部２４ｃ、無電解ＣｏＷＰめっき処理部２４ｄ及び洗浄・乾燥処理部２４ｅを有する蓋めっき処理部２４が配置されている。更に、搬送経路２５に沿って走行自在で、これらの間で基板の受渡しを行う搬送装置２６が備えられている。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a plan layout view of a wiring forming apparatus according to an embodiment of the present invention. This wiring forming apparatus is located inside the housing 10, and includes a load / unload unit 11, a copper plating processing unit 12, and a cleaning / drying processing unit 14 arranged in this order from the opposite side of the load / unload unit 11. , An annealing treatment unit 16, a first electrolytic or chemical polishing treatment unit 18, a second electrolytic or chemical polishing treatment unit 20, and a cleaning / drying processing unit 22. A lid plating processing unit 24 having a processing unit 24a, a Pd adhering unit 24b, a pre-plating processing unit 24c, an electroless CoWP plating processing unit 24d, and a cleaning / drying processing unit 24e is disposed. Further, a transport device 26 is provided which can travel along the transport path 25 and transfers a substrate between them.

銅めっき処理部１２は、図２に示すように、上方に開口し内部にめっき液３０を保持する円筒状のめっき槽３２と、基板Ｗを着脱自在に下向きに保持して該基板Ｗを前記めっき槽３２の上端開口部を塞ぐ位置に配置する基板保持部３４とを有している。めっき槽３２の内部には、めっき液３０中に浸漬されてアノード電極となる平板状の陽極板３６が水平に配置され、基板Ｗが陰極板となるようになっている。更に、めっき槽３２の底部中央には、上方に向けためっき液の噴流を形成するめっき液噴射管３８が接続され、めっき槽３２の上部外側には、めっき液受け４０が配置されている。   As shown in FIG. 2, the copper plating processing unit 12 has a cylindrical plating tank 32 that opens upward and holds a plating solution 30 therein, and a substrate W that is detachably held downward to hold the substrate W. And a substrate holding part 34 disposed at a position closing the upper end opening of the plating tank 32. Inside the plating tank 32, a flat plate-like anode plate 36, which is immersed in the plating solution 30 and serves as an anode electrode, is disposed horizontally, and the substrate W serves as a cathode plate. Further, a plating solution injection pipe 38 that forms a jet of a plating solution directed upward is connected to the center of the bottom of the plating vessel 32, and a plating solution receiver 40 is disposed outside the upper portion of the plating vessel 32.

これにより、めっき槽３２の上部に基板Ｗを基板保持部３４で下向きに保持して配置し、陽極板（アノード）３６と基板（カソード）Ｗの間に所定の電圧を印加しつつ、めっき液３０をめっき液噴射管３８から上方に向けて噴出させて、基板Ｗの下面（被めっき面）に垂直にめっき液３０の噴流を当てることで、陽極板３６と基板Ｗの間にめっき電流を流して、基板Ｗの下面にめっき膜を形成するようにしている。   As a result, the substrate W is disposed on the upper part of the plating tank 32 while being held downward by the substrate holder 34, and a predetermined voltage is applied between the anode plate (anode) 36 and the substrate (cathode) W while the plating solution is applied. 30 is ejected upward from the plating solution injection pipe 38, and a plating current is applied perpendicularly to the lower surface (surface to be plated) of the substrate W, whereby a plating current is applied between the anode plate 36 and the substrate W. The plating film is formed on the lower surface of the substrate W.

電解または化学研磨処理部１８，２０は、図３に示すように、上方に開口し内部に研磨液（電解液または化学薬品）５０を保持する円筒状の研磨槽５２と、基板Ｗを静電チャック等の保持部５４で着脱自在に下向きに保持して該基板Ｗを研磨槽５２の上端開口部を塞ぐ位置に配置する基板保持部５６とを有している。研磨槽５２の内部には、研磨液５０中に浸漬されてカソードとなる平板状の板体５８が水平に配置され、基板Ｗがアノードとなるようになっている。更に、基板保持部５６は、その中央部でモータ６０に接続された駆動軸６２の下端に連結されて基板Ｗと一体に回転し、板体５８は、シリンダ等の往復駆動部６４の往復ロッド６６の先端に連結されて、この往復駆動部６４の駆動に伴って水平方向に沿って往復動するよう構成されている。   As shown in FIG. 3, the electrolytic or chemical polishing processing units 18 and 20 electrostatically hold a substrate W and a cylindrical polishing tank 52 that opens upward and holds a polishing liquid (electrolytic solution or chemical) 50 inside. And a substrate holding portion 56 that holds the substrate W in a position that closes the upper end opening of the polishing tank 52 while holding the substrate W detachably downward by a holding portion 54 such as a chuck. Inside the polishing tank 52, a flat plate body 58 that is immersed in the polishing liquid 50 and serves as a cathode is disposed horizontally, and the substrate W serves as an anode. Further, the substrate holding portion 56 is coupled to the lower end of the drive shaft 62 connected to the motor 60 at the center thereof and rotates integrally with the substrate W, and the plate body 58 is a reciprocating rod of the reciprocating drive portion 64 such as a cylinder. The reciprocating drive unit 64 is coupled to the tip of the reciprocating drive unit 64 so as to reciprocate along the horizontal direction.

これにより、基板Ｗを基板保持部５６で下向きに保持して基板Ｗの下面（研磨面）を研磨液５０に接触させた状態で、基板Ｗを基板保持部５６と一体に回転させ、同時に板体５８を往復運動させながら、板体（カソード）５８と基板（アノード）Ｗの間に所定の電圧を印加して板体５８と基板Ｗの間にめっき電流を流すことで、基板Ｗに形成されためっき膜を電解研磨し、電流を止めることで化学研磨するようにしている。   Thus, the substrate W is rotated downward integrally with the substrate holding unit 56 in a state where the substrate W is held downward by the substrate holding unit 56 and the lower surface (polishing surface) of the substrate W is in contact with the polishing liquid 50, and at the same time the plate Formed on the substrate W by applying a predetermined voltage between the plate body (cathode) 58 and the substrate (anode) W and causing a plating current to flow between the plate body 58 and the substrate W while reciprocating the body 58. The plated film is electropolished and chemically polished by stopping the current.

なお、電解または化学研磨処理部１８，２０において、研磨液（化学薬品）に基板の表面を単に浸漬させることで、研磨液の腐食作用により基板の表面を化学研磨することができ、板体５８と基板Ｗとを研磨液（電解液）に浸漬させ、これらの間に所定の電圧を印加することで基板の表面を電解研磨することができる。   In the electrolytic or chemical polishing processing units 18 and 20, the surface of the substrate can be chemically polished by the corrosive action of the polishing liquid by simply immersing the surface of the substrate in the polishing liquid (chemical). And the substrate W are immersed in a polishing liquid (electrolytic solution), and a predetermined voltage is applied between them, so that the surface of the substrate can be electropolished.

図４は、電解または化学研磨処理部１８，２０の他の例を示すもので、これは、板体５８として基板Ｗより大径のものを使用するとともに、この板体５８の中央をモータ６８を備えた駆動軸７０の上端に連結して、このモータ６８の駆動に伴って板体５８が回転するようにしたものである。   FIG. 4 shows another example of the electrolytic or chemical polishing processing units 18, 20, which uses a plate 58 having a diameter larger than that of the substrate W, and the center of the plate 58 is arranged at the motor 68. The plate body 58 is connected to the upper end of the drive shaft 70 having the above-mentioned structure so that the plate body 58 rotates as the motor 68 is driven.

次に、図５及び図６を参照して配線形成処理について説明する。この例は、前記図１８（ｂ）に示す銅膜６を堆積させた基板Ｗの表面を、ＣＭＰ工程を経ることなく平坦化して銅配線を形成し、更に銅配線の表面を蓋めっきするようにした例を示す。   Next, the wiring formation process will be described with reference to FIGS. In this example, the surface of the substrate W on which the copper film 6 shown in FIG. 18B is deposited is flattened without passing through a CMP process to form a copper wiring, and the surface of the copper wiring is further plated with a lid. An example is shown.

先ず、表面にシード層７を形成した基板Ｗ（図１８（ａ）参照）をロード・アンロード部１１から搬送装置２６で一枚ずつ取り出し、銅めっき処理部１２に搬入する（ステップ１）。   First, the substrates W (see FIG. 18A) on which the seed layer 7 is formed are taken out one by one from the load / unload unit 11 by the transport device 26 and carried into the copper plating processing unit 12 (step 1).

次に、この銅めっき処理部１２で、例えば電解銅めっき処理を行って、図６（ａ）に示すように、基板Ｗの表面に銅膜６を形成する（ステップ２）。この時、大穴の存在に伴う銅膜の凹みの軽減を第一優先に考え、図２に示すめっき液３０として、ボトムアップ性の優れたもの、例えば硫酸銅の濃度が高く、硫酸の濃度が低いボトムアップ性の優れた組成、例えば、硫酸銅１００〜３００ｇ／ｌ、硫酸１０〜１００ｇ／ｌの組成を有し、ボトムアップ性を向上させる添加剤を含有したものを使用する。ここで、ボトムアップ性とは、穴中のボトムアップ成長に優れた性質を意味する。   Next, for example, an electrolytic copper plating process is performed in the copper plating processing unit 12 to form a copper film 6 on the surface of the substrate W as shown in FIG. 6A (step 2). At this time, the first priority is to reduce the depression of the copper film due to the presence of the large hole, and the plating solution 30 shown in FIG. 2 has an excellent bottom-up property, for example, a high concentration of copper sulfate, and a concentration of sulfuric acid. A composition having a low bottom-up property, such as copper sulfate 100 to 300 g / l, sulfuric acid 10 to 100 g / l, and containing an additive for improving bottom-up property is used. Here, the bottom-up property means a property excellent in bottom-up growth in a hole.

そして、この銅めっき処理後の基板Ｗを洗浄・乾燥処理部１４に搬送し洗浄して乾燥させ（ステップ３）、しかる後、洗浄・乾燥後の基板Ｗをアニール処理部１６に搬送する。そして、銅膜６を堆積させた状態で基板Ｗに熱処理を施して銅膜６をアニールし（ステップ４）、しかる後、アニール後の基板Ｗを第１の電解または化学研磨処理部１８に搬送する。   Then, the substrate W after the copper plating process is transported to the cleaning / drying processing unit 14, cleaned and dried (step 3), and then the cleaned / dried substrate W is transported to the annealing processing unit 16. Then, with the copper film 6 deposited, the substrate W is subjected to heat treatment to anneal the copper film 6 (step 4), and then the annealed substrate W is transported to the first electrolytic or chemical polishing processing unit 18. To do.

次に、この第１の電解または化学研磨処理部１８で基板Ｗの表面（被めっき面）に第１段の電解または化学研磨処理を施して、基板Ｗの表面に形成された銅膜６の研磨除去する（ステップ５）。この時、電解研磨にあっては、図３及び図４に示す研磨液（電解液）５０として、銅を溶解する無機酸及び／または有機酸のいずれか１種類以上と、増粘剤としての多価アルコール類、高分子多価アルコール類またはアルキレングリコールアルキルエーテル類のいずれか１種類以上を含むことで、粘性を増加させた研磨液を使用する。   Next, the first electrolytic or chemical polishing processing unit 18 performs a first-stage electrolytic or chemical polishing process on the surface (surface to be plated) of the substrate W, so that the copper film 6 formed on the surface of the substrate W is formed. Polish and remove (step 5). At this time, in the electropolishing, as the polishing liquid (electrolytic solution) 50 shown in FIGS. 3 and 4, any one or more of an inorganic acid and / or an organic acid that dissolves copper, and a thickener A polishing liquid having increased viscosity by containing one or more of polyhydric alcohols, polymer polyhydric alcohols, and alkylene glycol alkyl ethers is used.

このように、基板Ｗの表面に成膜した銅膜６の表面を、増粘剤を介して粘性を増加させた研磨液５０を用いて電解研磨することで、基板表面の銅の錯体が存在する拡散層を増大させることにより、分極電位をアップさせ、基板表面全面の液中導電性を抑制することができる。これにより、基板Ｗの表面全面に渡って銅の溶解及び／又は、銅イオンの液中移動を抑制し、微細な電流密度の変動に対して敏感に反応しないようにして、高い平坦性を得ることができる。すなわち、これら拡散層の増大、分極電位アップ及び導電性抑制は、研磨液の粘度の値に大きく左右され、研磨液の粘度を上げることで研磨の際の平坦性を向上させることができる。この研磨液５０としては、粘度が１０〜１００ｃＰ、より好ましくは２０〜６０ｃＰで、導電率が１〜２０ｍＳ／ｃｍ、より好ましくは５〜１８ｍＳ／ｃｍであるものを使用することが、十分な平坦性を得る上で好ましい。また、研磨液５０の温度は、０〜３０℃であることが好ましく、５〜２５℃であることが更に好ましい。   Thus, the surface of the copper film 6 formed on the surface of the substrate W is electrolytically polished using the polishing liquid 50 having increased viscosity via a thickener, so that a copper complex exists on the surface of the substrate. By increasing the number of diffusion layers to be increased, the polarization potential can be increased and the in-liquid conductivity of the entire substrate surface can be suppressed. As a result, dissolution of copper and / or movement of copper ions in the liquid over the entire surface of the substrate W is suppressed, and high flatness is obtained so as not to react sensitively to fine current density fluctuations. be able to. That is, the increase of the diffusion layer, the increase of the polarization potential, and the suppression of the conductivity are greatly influenced by the value of the viscosity of the polishing liquid, and the flatness during polishing can be improved by increasing the viscosity of the polishing liquid. As this polishing liquid 50, it is sufficient to use a liquid having a viscosity of 10 to 100 cP, more preferably 20 to 60 cP, and a conductivity of 1 to 20 mS / cm, more preferably 5 to 18 mS / cm. It is preferable for obtaining the properties. Moreover, it is preferable that it is 0-30 degreeC, and, as for the temperature of the polishing liquid 50, it is still more preferable that it is 5-25 degreeC.

これにより、図６（ｂ）に示すように、バリア膜５上のシード層７と該シード層７の上の銅膜６を除去して、バリア膜５の表面を露出させ、このバリア膜５の表面とコンタクトホール３及び配線用の溝４に充填した銅膜６の表面を平坦化させて電解研磨を完了する。同一処理部で電解研磨から化学研磨に切り換えることもある。   Thereby, as shown in FIG. 6B, the seed layer 7 on the barrier film 5 and the copper film 6 on the seed layer 7 are removed, and the surface of the barrier film 5 is exposed. Then, the surface of the copper film 6 and the surface of the copper film 6 filled in the contact hole 3 and the wiring groove 4 are flattened to complete the electropolishing. In some cases, the same processing section is switched from electrolytic polishing to chemical polishing.

この銅の溶解する無機酸としては、例えばリン酸が、同じく有機酸としては、例えばクエン酸、シュウ酸またはグルコン酸が挙げられる。増粘剤としての多価アルコール類としては、例えば、エチレングリコール、プロピレングリコール、グリセリン等が、同じく高分子多価アルコール類としては、ポリエチレングリコール、ポリプロピレングリコール等が、同じくアルキレングリコールアルキルエーテル類としては、エチレングリコール−エチルエーテル、エチレングリコール−メチルエーテル、エチレングリコール−プロピルエーテル、エチレングリコール−フェニルエーテル、プロピレングリコール−エチルエーテル、プロピレングリコール−メチルエーテル、プロピレングリコール−フェニルエーテル、ジプロピレングリコール−モノメチルエーテル等が挙げられる。   Examples of the inorganic acid in which copper dissolves include phosphoric acid, and examples of the organic acid include citric acid, oxalic acid, and gluconic acid. Examples of polyhydric alcohols as thickeners include, for example, ethylene glycol, propylene glycol, glycerin, and the like, high molecular polyhydric alcohols, such as polyethylene glycol, polypropylene glycol, and the like, as alkylene glycol alkyl ethers. , Ethylene glycol-ethyl ether, ethylene glycol-methyl ether, ethylene glycol-propyl ether, ethylene glycol-phenyl ether, propylene glycol-ethyl ether, propylene glycol-methyl ether, propylene glycol-phenyl ether, dipropylene glycol-monomethyl ether, etc. Is mentioned.

この時、電解研磨の際に印加される電流波形パルスとして、パルス波形またはＰＲパルス波形を使用することで、研磨液中に含まれる添加剤の拡散を改善することができる。   At this time, the diffusion of the additive contained in the polishing liquid can be improved by using a pulse waveform or a PR pulse waveform as a current waveform pulse applied during electropolishing.

ここで、研磨液を使用して電解または化学研磨を行った時の実験結果例を図７〜図９に示す。ここで、図７は、研磨液の粘度及び導電率と研磨効果の関係を、図８は、液温と研磨効果の関係を、図９は、電流波形と研磨効果の関係をそれぞれ示す。これらの図において、ａ−１，ａ−２，ｃ−１，ｃ−２は、下記の表１の電荷条件を示している。   Here, FIG. 7 to FIG. 9 show examples of experimental results when electrolytic or chemical polishing is performed using a polishing liquid. Here, FIG. 7 shows the relationship between the viscosity and conductivity of the polishing liquid and the polishing effect, FIG. 8 shows the relationship between the liquid temperature and the polishing effect, and FIG. 9 shows the relationship between the current waveform and the polishing effect. In these figures, a-1, a-2, c-1, and c-2 indicate the charge conditions in Table 1 below.

Figure 2005229121
図７は、基本液にリン酸を使用し、増粘剤としてジプロピレングリコール−モノメチルエーテルを添加し、水の混合で粘度を変えた研磨液を使用して研磨した時の結果を示す。この図７から、液の粘度の上昇と導電率の下降に伴って、研磨効果は上がり、粘度２０〜６０ｃｐ、導電率１７〜９ｍＳ／ｃｍの範囲で研磨効果指数がピークを示していることが判る。
Figure 2005229121
 FIG. 7 shows the results when polishing is performed using a polishing liquid in which phosphoric acid is used as the base liquid, dipropylene glycol monomethyl ether is added as a thickener, and the viscosity is changed by mixing water. From FIG. 7, it can be seen that as the viscosity of the liquid increases and the conductivity decreases, the polishing effect increases, and the polishing effect index has a peak in the range of viscosity 20 to 60 cp and conductivity 17 to 9 mS / cm. I understand.

図８は、リン酸１００ｍｌ、ジプロピレングリコール−モノメチルエーテル１５０ｍｌ、水１５０ｍｌを混合した液組成を有し、温度を変えた研磨液を使用して研磨した時の結果を示す。この図８から、各電解条件によって研磨効果が変化し、液温が３０℃以下、特に２５℃以下で研磨効率が上昇することが判る。   FIG. 8 shows a result of polishing using a polishing liquid having a liquid composition in which 100 ml of phosphoric acid, 150 ml of dipropylene glycol monomethyl ether, and 150 ml of water are mixed, and the temperature is changed. From FIG. 8, it can be seen that the polishing effect varies depending on each electrolytic condition, and the polishing efficiency increases when the liquid temperature is 30 ° C. or lower, particularly 25 ° C. or lower.

図９は、リン酸１００ｍｌ、ジプロピレングリコール−モノメチルエーテル１５０ｍｌ、水５０ｍｌを混合した液組成を有しする研磨液を使用し、パルス波形の変化させた時の結果を示す。ここで、１０／１０Ｓｅｃは、ＯＮが１０Ｓｅｃ、ＯＦＦが１０Ｓｅｃを示している。これにより、１ｍＳｅｃ〜１Ｓｅｃ、より好ましくは１ｍＳｅｃ〜１００ｍＳｅｃのＯＮ／ＯＦＦパルス波形が望ましいことが判る。   FIG. 9 shows the results when the pulse waveform was changed using a polishing liquid having a liquid composition in which 100 ml of phosphoric acid, 150 ml of dipropylene glycol monomethyl ether and 50 ml of water were mixed. Here, 10/10 Sec indicates 10 Sec for ON and 10 Sec for OFF. Accordingly, it can be seen that an ON / OFF pulse waveform of 1 mSec to 1 Sec, more preferably 1 mSec to 100 mSec, is desirable.

ここで、図３に示す電解または化学研磨処理部１８にあっては、電解研磨処理中に基板Ｗを回転させ、同時に板体５８を往復動させる。図４に示す電解または化学研磨処理部１８にあっては、基板Ｗと板体５８を共に同方向に回転させる。これによって、基板Ｗと板体５８とを相対移動させ、しかも基板上の各ポイントにおける板体５８との相対速度をより均一にして、基板Ｗと板体５８との間の極間を流れる研磨液５０の流れの状態をより均一に、すなわち研磨液５０の流れに特異点が生じなくすることで、基板Ｗの局部的な研磨が増幅されて平坦性が悪くなることを防止する。なお、このことは、次の電解または化学研磨処理部における化学研磨処理にあっても同様である。   Here, in the electrolytic or chemical polishing processing unit 18 shown in FIG. 3, the substrate W is rotated during the electrolytic polishing process, and the plate body 58 is reciprocated simultaneously. In the electrolytic or chemical polishing processing unit 18 shown in FIG. 4, both the substrate W and the plate body 58 are rotated in the same direction. As a result, the substrate W and the plate 58 are moved relative to each other, and the relative velocity with the plate 58 at each point on the substrate is made more uniform so that the polishing flows between the poles between the substrate W and the plate 58. By making the flow state of the liquid 50 more uniform, that is, no singularity is generated in the flow of the polishing liquid 50, local polishing of the substrate W is prevented from being amplified and flatness is deteriorated. This also applies to the chemical polishing treatment in the next electrolytic or chemical polishing treatment section.

次に、第１の電解または化学研磨処理部１８で第１段の電解また化学研磨処理を施した基板を第２の電解または化学研磨処理部２０に搬送し、ここで基板の表面に第２段の電解または化学研磨処理を施す（ステップ６）。この時、化学研磨処置にあっては、研磨液（化学薬品）として、前記電解または化学研磨処理（ステップ５）に使用した粘性を上げた研磨液に、銅の表面に吸着し、銅の溶解を化学的に抑制する添加剤、または銅と強固な錯体を形成するか、または銅表面に不動態化皮膜を生成させることを助長する基本液や添加剤を添加したものを使用する。   Next, the substrate that has been subjected to the first-stage electrolytic or chemical polishing treatment in the first electrolytic or chemical polishing treatment unit 18 is transferred to the second electrolytic or chemical polishing treatment unit 20, where the second electrolytic or chemical polishing treatment unit 18 has a second surface on the substrate surface. Step electrolysis or chemical polishing is performed (step 6). At this time, in the chemical polishing treatment, as the polishing liquid (chemical), the increased viscosity used in the electrolysis or chemical polishing process (step 5) is adsorbed on the surface of copper, and the copper is dissolved. Or an additive to which a basic solution or additive that forms a strong complex with copper or promotes the formation of a passivating film on the copper surface is used.

これにより、銅膜６の表面とＴａＮ等の導電性物質からなるバリア膜５の表面を、この基本液や添加剤を添加した研磨液を用いて電解または化学研磨することで、銅膜６とバリア膜（ＴａＮ，Ｔａ，ＷＮ，ＴｉＮなど）５とを同じ研磨レートで均一に研磨することができる。これによって、図６（ｃ）に示すように、酸化膜２上のバリア膜５を除去して酸化膜２の表面を露出させ、この酸化膜２の表面とコンタクトホール３及び配線用の溝４に充填した銅膜６の表面を平坦化させて第２段の第２の電解または化学研磨処理を完了する。   Thus, the surface of the copper film 6 and the surface of the barrier film 5 made of a conductive material such as TaN are electrolyzed or chemically polished using the polishing liquid to which the basic liquid or additive is added, so that the copper film 6 and The barrier film (TaN, Ta, WN, TiN, etc.) 5 can be uniformly polished at the same polishing rate. As a result, as shown in FIG. 6C, the barrier film 5 on the oxide film 2 is removed to expose the surface of the oxide film 2, and the surface of the oxide film 2, the contact hole 3 and the wiring groove 4 are exposed. The surface of the copper film 6 filled in is flattened to complete the second stage of second electrolytic or chemical polishing treatment.

ここで、銅の溶解を電気化学的に抑制する添加剤としては、例えば、イミダゾール、ベンズイミダゾール、ベンゾトリアゾール、フェナセチン等が挙げられる。また、銅表面に不動態化皮膜を生成させることを助長する基本液としては、例えば、クロム酸が、銅と強固な錯体を形成させる添加剤としては、例えば、ＥＤＴＡやキナルジン等が、銅と強固な錯体を形成させる基本液としては、例えばピロリン酸が挙げられる。   Here, examples of the additive that electrochemically suppresses dissolution of copper include imidazole, benzimidazole, benzotriazole, phenacetin, and the like. In addition, as a basic solution for promoting the formation of a passivating film on the copper surface, for example, chromic acid, and as an additive for forming a strong complex with copper, for example, EDTA, quinaldine, etc. An example of a basic solution for forming a strong complex is pyrophosphoric acid.

このようにして、酸化膜またはＬｏｗ−Ｋ材膜２上の不要な銅膜６とバリア膜５を電解研磨処理及び／または化学研磨処理によって除去し、酸化膜２の表面とコンタクトホール３及び配線用の溝４に充填した銅膜６の表面を平坦化させることで、ＣＭＰ処理自体を省略することができる。   In this way, unnecessary copper film 6 and barrier film 5 on oxide film or Low-K material film 2 are removed by electrolytic polishing and / or chemical polishing, and the surface of oxide film 2, contact hole 3 and wiring are removed. By planarizing the surface of the copper film 6 filled in the grooves 4 for use, the CMP process itself can be omitted.

次に、第２段の電解または化学研磨処理後の基板Ｗを洗浄・乾燥処理部２２に搬送し、ここで洗浄し乾燥させ（ステップ７）、蓋めっき処理部２４の前処理部２４ａに搬送し、ここで、基板に、例えば基板表面を再度洗浄する前処理を施す（ステップ８）。そして、銅膜６の表面にＰｄ付着部２４ｂでＰｄを付着させて銅膜６の露出表面を活性化させ（ステップ９）、しかる後、めっき前処理部２４ｃでめっき前処理、例えば中和処理を施す（ステップ１０）。次に、無電解ＣｏＷＰめっき処理部２４ｄに搬送し、ここで、活性化した銅膜６の表面にＣｏＷＰによる選択的な無電解めっきを施し、これによって、図６（ｄ）に示すように、銅膜６の露出表面をＣｏＷＰ膜Ｐで保護する（ステップ１１）。このめっき液としては、例えば、コバルトの塩とタングステンの塩に、還元剤、錯化剤、ｐＨ緩衝剤及びｐＨ調整剤を添加したものがあげられる。なお、研磨後に露出した表面に、例えば無電解Ｎｉ−Ｂめっきを施して、配線６の外部への露出表面に、Ｎｉ−Ｂ合金膜からなる保護膜（めっき膜）Ｐを選択的に形成して配線６を保護するようにしてもよい。この保護膜Ｐの膜厚は、０．１〜５００ｎｍ、好ましくは、１〜２００ｎｍ、更に好ましくは、１０〜１００ｎｍ程度である。
この保護膜Ｐを形成する無電解Ｎｉ−Ｂめっき液としては、例えばニッケルイオン、ニッケルイオンの錯化剤、ニッケルイオンの還元剤としてのアルキルアミンボランまたは硼素化水素化合物を含有し、ｐＨ調整にＴＭＡＨ（水酸化テトラメチルアンモニウム）を使用して、ｐＨを５〜１２に調整したものが使用される。 Next, the substrate W after the second-stage electrolytic or chemical polishing treatment is transported to the cleaning / drying processing section 22 where it is cleaned and dried (step 7) and transported to the pretreatment section 24a of the lid plating processing section 24. Here, for example, the substrate is subjected to pretreatment for cleaning the substrate surface again (step 8). Then, Pd is adhered to the surface of the copper film 6 by the Pd adhering portion 24b to activate the exposed surface of the copper film 6 (step 9). (Step 10). Next, it is transported to the electroless CoWP plating processing unit 24d, where the surface of the activated copper film 6 is subjected to selective electroless plating with CoWP, and as shown in FIG. 6 (d), The exposed surface of the copper film 6 is protected by the CoWP film P (step 11). Examples of the plating solution include a cobalt salt and a tungsten salt to which a reducing agent, a complexing agent, a pH buffering agent, and a pH adjusting agent are added. The surface exposed after polishing is subjected to, for example, electroless Ni—B plating, and a protective film (plating film) P made of a Ni—B alloy film is selectively formed on the surface exposed to the outside of the wiring 6. Thus, the wiring 6 may be protected. The thickness of the protective film P is about 0.1 to 500 nm, preferably about 1 to 200 nm, and more preferably about 10 to 100 nm.
The electroless Ni-B plating solution for forming this protective film P contains, for example, nickel ions, nickel ion complexing agents, alkylamine borane or borohydride compounds as nickel ion reducing agents, and is used for pH adjustment. What adjusted pH to 5-12 using TMAH (tetramethylammonium hydroxide) is used.

次に、この蓋めっき処理後の基板Ｗを洗浄・乾燥処理部２４ｅに搬送して洗浄・乾燥処理を行い（ステップ１２）、この洗浄・乾燥後の基板Ｗを搬送装置２６でロード・アンロード部１１のカセットに戻す（ステップ１３）。
なお、この例では、蓋めっき処理として、ＣｏＷＰ無電解めっき処理を施す前に、Ｐｄを付着することによって活性化させた銅膜６の露出表面をＣｏＷＰ膜で選択的に被覆するようにした例を示しているが、これに限定されないことは勿論である。 Next, the substrate W after the lid plating process is transported to the cleaning / drying processing unit 24e to perform the cleaning / drying process (step 12), and the substrate W after the cleaning / drying is loaded / unloaded by the transport device 26. Return to the cassette of section 11 (step 13).
In this example, as the lid plating treatment, the exposed surface of the copper film 6 activated by adhering Pd is selectively covered with a CoWP film before the CoWP electroless plating treatment. However, the present invention is not limited to this.

ここで、図１０に示すように、前記ステップ５における電解または化学研磨処理とステップ６における電解または化学研磨処理との間に、化学研磨処理または電解研磨処理（ステップ５−１）を、ステップ６における電解または化学研磨処理とステップ７における洗浄・乾燥処理との間に、化学研磨処理または複合電解研磨処理（ステップ６−１）を行うことが好ましい。   Here, as shown in FIG. 10, a chemical polishing process or an electrolytic polishing process (step 5-1) is performed between the electrolytic or chemical polishing process in step 5 and the electrolytic or chemical polishing process in step 6. It is preferable to perform a chemical polishing process or a composite electrolytic polishing process (step 6-1) between the electrolytic or chemical polishing process in step 1 and the cleaning / drying process in step 7.

すなわち、基板Ｗの表面に電解研磨処理を施して、基板Ｗの表面に形成された銅膜６を研磨除去すると（ステップ５）、研磨条件等によっては、図１１（ａ）に示すように、バリア膜５の表面に銅６ａが残ることがある。この状態で電解研磨処理を続けると穴や配線溝中の銅のみが研磨され、バリア膜上の銅が残ってしまう。   That is, when the surface of the substrate W is subjected to electrolytic polishing and the copper film 6 formed on the surface of the substrate W is removed by polishing (step 5), depending on the polishing conditions and the like, as shown in FIG. Copper 6a may remain on the surface of the barrier film 5. If the electrolytic polishing process is continued in this state, only the copper in the holes and wiring grooves is polished, and the copper on the barrier film remains.

そこで、このような場合に、例えば電源を切って板体５８と基板Ｗとの間に所定の電圧を印加することを止め、電解研磨処理（ステップ６）に使用した研磨液を化学薬品とした化学研磨処理に切り換える（ステップ６−１）。これによって、図１１（ｂ）に示すように、バリア膜５の表面に残った銅６ａを除去する。   Therefore, in such a case, for example, the power is turned off to stop applying a predetermined voltage between the plate body 58 and the substrate W, and the polishing liquid used in the electrolytic polishing process (step 6) is used as a chemical. Switch to chemical polishing (step 6-1). As a result, the copper 6a remaining on the surface of the barrier film 5 is removed as shown in FIG.

なお、この例にあっては、電解研磨処理（ステップ６）と化学研磨処理（ステップ６−１）を同じ研磨液を使用し同じ研磨槽内で行うようにしているが、別の研磨槽内に、例えば電流密度の高いエリアに多く吸着した添加剤の効果により、残った銅６ａを優先的に除去する添加剤を添加した研磨液（化学薬品）による化学研磨処理または同様な研磨液（電解液）による電解研磨処理を行うようにしてもよい。この添加剤としては、例えばイミダゾール、ベンズイミダゾール、ベンゾトリアゾール、フェナセチン等が挙げられる。   In this example, the electrolytic polishing process (step 6) and the chemical polishing process (step 6-1) are performed in the same polishing tank using the same polishing liquid, but in another polishing tank. In addition, for example, due to the effect of the additive adsorbed in a large area of high current density, chemical polishing treatment with a polishing liquid (chemical) added with an additive that preferentially removes the remaining copper 6a or a similar polishing liquid (electrolysis) Electropolishing with a liquid) may be performed. Examples of the additive include imidazole, benzimidazole, benzotriazole, phenacetin and the like.

また、基板Ｗの表面にバリア膜５と銅膜６を同時に除去する化学研磨処理または電解研磨処理を施すと（ステップ６）、研磨条件等によっては、図１１（ｃ）に示すように、酸化膜またはＬｏｗ−Ｋ材膜２の表面にＴａＮ等バリア層の残存の導電性物質５ａが残ることがある。これでは、ＣＭＰ処理工程自体を省略することができない。   Further, when a chemical polishing process or an electrolytic polishing process for removing the barrier film 5 and the copper film 6 at the same time is performed on the surface of the substrate W (step 6), depending on the polishing conditions and the like, as shown in FIG. The remaining conductive material 5a of the barrier layer such as TaN may remain on the surface of the film or the Low-K material film 2 in some cases. In this case, the CMP process itself cannot be omitted.

そこで、このような場合に、例えば、前記電解研磨処理（ステップ５）に使用した電解液に添加した添加剤より効果の強い添加剤を添加した研磨液で電解または化学研磨を施したり、または銅を不動態化させる基本液を使用したり、不動態化電解条件により、電解研磨処理を施すことで、図６（ｃ）に示すように、酸化膜またはＬｏｗ−Ｋ材膜（絶縁膜）２の表面とコンタクトホール３及び配線用の溝４に充填した銅膜６の表面を平坦化させる。   Therefore, in such a case, for example, electrolytic or chemical polishing is performed with a polishing solution to which an additive having a stronger effect than the additive added to the electrolytic solution used in the electrolytic polishing treatment (step 5) is applied, or copper is used. As shown in FIG. 6 (c), an oxide film or a Low-K material film (insulating film) 2 is used by using a basic solution for passivating or subjecting to an electropolishing process according to the passivating electrolysis conditions. And the surface of the copper film 6 filled in the contact hole 3 and the wiring groove 4 are flattened.

なお、この電解または化学研磨処理の代わりに、銅膜６とＴａＮ等の導電性物質からなるバリア膜５の全面を不動態化させて全面を同時に複合電解研磨処理で研磨除去するようにしてもよく、また電解または化学研磨処理に引き続いて、このような複合電解研磨処理を行うようにしてもよい。   Instead of this electrolytic or chemical polishing treatment, the entire surface of the copper film 6 and the barrier film 5 made of a conductive material such as TaN may be passivated so that the entire surface is simultaneously removed by the combined electrolytic polishing treatment. In addition, such a composite electrolytic polishing process may be performed subsequent to the electrolytic or chemical polishing process.

この複合電解研磨処理は、研磨液の中に研磨砥粒を加えることで、図１２に示すように、この砥粒Ｇが基板Ｗの表面に残り、不動態化された銅やＴａＮ等の突起部Ｐを研磨除去し、同時に砥粒Ｇにより研磨除去された不動態層の下に存在するＴａＮ等の導電性物質からなるバリア膜５を電解及び化学研磨で優先的に研磨除去するようにしたもので、これにより、銅膜とＴａＮ等の導電性物質からなるバリア膜５を同時研磨することができる。例えば、研磨仕上げ面の面粗さを１００Å以下とするならば、砥粒粒度は＃５０００以上が好ましい。   In this composite electrolytic polishing treatment, abrasive grains are added to the polishing liquid, so that the abrasive grains G remain on the surface of the substrate W as shown in FIG. The portion P is polished and removed, and at the same time, the barrier film 5 made of a conductive material such as TaN existing under the passive layer polished and removed by the abrasive grains G is preferentially polished and removed by electrolytic and chemical polishing. Thus, the barrier film 5 made of a conductive material such as a copper film and TaN can be simultaneously polished. For example, if the surface roughness of the polished surface is 100 mm or less, the abrasive grain size is preferably # 5000 or more.

図１３は、本発明の他の実施の形態の配線形成装置の平面配置図を示す。この配線形成装置は、ハウジング１０の内部に位置して、ロード・アンロード部１１と、このロード・アンロード部１１の反対側から順に配置された銅めっき処理部１２、洗浄・乾燥処理部１４、第１の電解または化学研磨処理部１８、第２の電解または化学研磨処理部２０、洗浄・乾燥処理部２２及びアニール処理部１６とを有し、更に搬送経路２５に沿って走行自在で、これらの間で基板の受渡しを行う搬送装置２６が備えられている。銅めっき処理部１２、電解または化学研磨処理部１８，２０等の構成は、前述したものと同様である。   FIG. 13 is a plan layout view of a wiring forming apparatus according to another embodiment of the present invention. This wiring forming apparatus is located inside the housing 10, and includes a load / unload unit 11, a copper plating processing unit 12, and a cleaning / drying processing unit 14 arranged in this order from the opposite side of the load / unload unit 11. The first electrolytic or chemical polishing processing unit 18, the second electrolytic or chemical polishing processing unit 20, the cleaning / drying processing unit 22 and the annealing processing unit 16, and further travel along the transport path 25. A transfer device 26 is provided for transferring the substrate between them. The configurations of the copper plating processing unit 12, the electrolytic or chemical polishing processing units 18, 20 and the like are the same as those described above.

次に、図１４を参照して配線形成処理について説明する。この例は、前記図１８（ｂ）に示す銅膜６を堆積させた基板Ｗの表面を、ＣＭＰ工程を経て平坦化して銅配線を形成するのであるが、このＣＭＰ工程における負荷を低減するようにした例を示す。仕上げの平坦化はＣＭＰ工程で行う。   Next, the wiring formation process will be described with reference to FIG. In this example, the surface of the substrate W on which the copper film 6 shown in FIG. 18B is deposited is flattened through a CMP process to form a copper wiring, but the load in this CMP process is reduced. An example is shown. Finishing flattening is performed by a CMP process.

先ず、表面にシード層７を形成した基板Ｗ（図１８（ａ）参照）をロード・アンロード部１１から搬送装置２６で一枚ずつ取り出し、銅めっき処理部１２に搬入する（ステップ１）。   First, the substrates W (see FIG. 18A) on which the seed layer 7 is formed are taken out one by one from the load / unload unit 11 by the transport device 26 and carried into the copper plating processing unit 12 (step 1).

次に、この銅めっき処理部１２で、例えば電解銅めっき処理を行って、基板Ｗの表面に銅膜６（図１８（ｂ）参照）を形成する（ステップ２）。そして、この銅めっき処理後の基板Ｗを洗浄・乾燥処理部１４に搬送し洗浄して乾燥させ（ステップ３）、しかる後、第１の電解または化学研磨処理部１８に搬送する。   Next, in this copper plating processing part 12, for example, an electrolytic copper plating process is performed to form a copper film 6 (see FIG. 18B) on the surface of the substrate W (step 2). Then, the substrate W after the copper plating process is transported to the cleaning / drying processing unit 14, cleaned and dried (step 3), and then transported to the first electrolytic or chemical polishing processing unit 18.

次に、この第１の電解または化学研磨処理部１８で基板Ｗの表面（被めっき面）に第１段の電解または化学研磨処理を施して、基板Ｗの表面に形成された銅膜６の研磨除去する（ステップ４）。この時、電解研磨にあっては、図３及び図４に示す研磨液（電解液）５０として、前述と同様に、銅を溶解する無機酸及び／または有機酸のいずれか１種類以上と、増粘剤としての多価アルコール類、高分子多価アルコール類またはアルキレングリコールアルキルエーテル類のいずれか１種類以上を含むことで、粘性を増加させた研磨液を使用し、これによって、基板表面の拡散層を増大させるとともに、分極電位をアップさせ、更に基板全面の液中導電性を抑制して、高い平坦性を得る。   Next, the first electrolytic or chemical polishing processing unit 18 performs a first-stage electrolytic or chemical polishing process on the surface (surface to be plated) of the substrate W, so that the copper film 6 formed on the surface of the substrate W is formed. Polish and remove (step 4). At this time, in the electrolytic polishing, as the polishing liquid (electrolytic solution) 50 shown in FIGS. 3 and 4, as described above, any one or more of an inorganic acid and / or an organic acid dissolving copper, A polishing liquid having increased viscosity by containing at least one of polyhydric alcohols, polymeric polyhydric alcohols or alkylene glycol alkyl ethers as a thickener is used. While increasing the diffusion layer, the polarization potential is increased, and the conductivity in the liquid on the entire surface of the substrate is suppressed to obtain high flatness.

次に、第１段の電解研磨処理後の基板を第２の電解または化学研磨処理部２０に搬送し、ここで基板の表面に第２段の電解または化学研磨処理を施す（ステップ５）。この時、化学研磨にあっては、研磨液（化学薬品）として、前述と同様に、前記電解研磨処理に使用した粘性を上げた研磨液に、銅の表面に吸着し、銅の溶解を化学的に抑制する添加剤、または銅と強固な錯体を形成するか、または銅表面に不動態化皮膜を生成させることを助長する基本材または添加剤を添加したものを使用し、これによって、銅膜６（図１８（ｂ）参照）の平坦度を更に向上させる。ここで、化学研磨処理を省略しても良い。   Next, the substrate after the first-stage electropolishing treatment is transported to the second electrolysis or chemical polishing treatment section 20, where the second-stage electrolysis or chemical polishing treatment is performed on the surface of the substrate (step 5). At this time, in the chemical polishing, the polishing liquid (chemical) is adsorbed on the copper surface to the polishing liquid with increased viscosity used in the electrolytic polishing process, as described above. Or additives with basic materials or additives that help to form a strong complex with copper or to form a passivating film on the copper surface. The flatness of the film 6 (see FIG. 18B) is further improved. Here, the chemical polishing treatment may be omitted.

なお、この化学研磨処理の代わりに、同様な添加剤を添加した研磨液を使用した電解研磨処理を行ってよく、また電解研磨電源を切って、電解研磨処理（ステップ４）に使用した研磨液を使用した化学研磨処理を行うようにしてもよいことは、前述と同様である。そして、銅膜６の膜厚がアニールに必要な最低膜厚、例えば３００ｎｍに達した時に、化学研磨を完了し、洗浄・乾燥処理部２２に搬送する。   Instead of this chemical polishing treatment, an electropolishing treatment using a polishing liquid to which similar additives are added may be performed, and the electropolishing power is turned off and the polishing liquid used for the electropolishing treatment (step 4). As described above, the chemical polishing process using the above may be performed. Then, when the film thickness of the copper film 6 reaches the minimum film thickness necessary for annealing, for example, 300 nm, the chemical polishing is completed, and the copper film 6 is transferred to the cleaning / drying processing unit 22.

この洗浄・乾燥処理部２２で基板を洗浄し乾燥させ（ステップ６）、洗浄・乾燥後の基板Ｗをアニール処理部１６に搬送する。そして、銅膜６を堆積させた状態で基板Ｗに熱処理を施して銅膜６をアニールし（ステップ７）、しかる後、アニール後の基板Ｗを搬送装置２６でロード・アンロード部１１のカセットに戻す（ステップ８）。   The cleaning / drying processing unit 22 cleans and dries the substrate (step 6), and transports the cleaned / dried substrate W to the annealing processing unit 16. Then, with the copper film 6 deposited, the substrate W is subjected to a heat treatment to anneal the copper film 6 (step 7), and then the annealed substrate W is transferred to the cassette of the load / unload unit 11 by the transfer device 26. (Step 8).

そして、別の装置で基板Ｗの表面にＣＭＰ処理を施し（ステップ９）、これによって、コンタクトホール３及び配線用の溝４に充填させた銅膜６の表面と酸化膜２の表面とをほぼ同一平面にして、銅膜６からなる配線を形成し（図１８（ｃ）参照）、必要に応じて、前述と同様な蓋めっき処理を施す（ステップ１０）。   Then, a CMP process is performed on the surface of the substrate W by another apparatus (step 9), whereby the surface of the copper film 6 and the surface of the oxide film 2 filled in the contact hole 3 and the wiring groove 4 are almost formed. A wiring made of the copper film 6 is formed on the same plane (see FIG. 18C), and a lid plating process similar to that described above is performed as necessary (step 10).

この例によれば、例えば基板の表面に微細穴と大穴が混在するように場合にあっても、電解研磨処理１段、または電解研磨処理と化学研磨処理または電解研磨処理の少なくとも２段の研磨処理を行うことで、銅膜の平坦性を向上させ、これによって、その後のＣＭＰ加工をディッシングの発生を防止しつつ短時間で行うことができる。   According to this example, even when fine holes and large holes are mixed on the surface of the substrate, for example, at least two stages of electrolytic polishing treatment or at least two stages of electrolytic polishing treatment and chemical polishing treatment or electrolytic polishing treatment are performed. By performing the treatment, the flatness of the copper film can be improved, whereby the subsequent CMP processing can be performed in a short time while preventing the occurrence of dishing.

なお、電解研磨により、基板の被めっき面を平坦化させるには、基板を限りなく平らに保持するとともに、板体（カソード）を限りなく平らに加工して、両者を限りなく近接させた状態で相対運動を行わせ、同時に基板面内に研磨液の流れと電場の特異点を生じさせないことが重要である。   In order to flatten the surface of the substrate to be plated by electrolytic polishing, the substrate is held as flat as possible, and the plate (cathode) is processed as flat as possible, and the two are placed as close as possible. It is important that the relative movement is performed at the same time, and at the same time, the flow of the polishing liquid and the singular point of the electric field are not generated in the substrate surface.

図１５及び図１６は、この要請に応えた電解または化学研磨処理部１８，２０の更に他の例を示す。これは、上方に開口して内部に研磨液５０を保持する円筒状の研磨槽５２と、基板Ｗを着脱自在に下向きに保持して該基板Ｗを前記研磨槽５２の上端開口部を塞ぐ位置に配置する基板保持部５６とを有している。   15 and 16 show still another example of the electrolytic or chemical polishing processing units 18 and 20 in response to this request. This is a cylindrical polishing tank 52 that opens upward and holds the polishing liquid 50 therein, and a position where the substrate W is detachably held downward to close the upper end opening of the polishing tank 52. And a substrate holding part 56 disposed on the substrate.

研磨槽５２は、略円板状の底板部７２と、この底板部７２の外周端部に固着した円筒状の溢流堰部７４と、この溢流堰部７４の外周を囲繞して該溢流堰部７４との間に研磨液排出部７６を形成する外殻部７８とを有しており、この研磨槽５２の底板部７２の上面に、研磨液５０中に浸漬されてカソードとなる平板状の板体（陰極板）５８が水平に配置されている。   The polishing tank 52 includes a substantially disc-shaped bottom plate portion 72, a cylindrical overflow weir portion 74 fixed to the outer peripheral end portion of the bottom plate portion 72, and an outer periphery of the overflow weir portion 74. An outer shell portion 78 that forms a polishing liquid discharge portion 76 is formed between the flow weir portion 74 and the upper surface of the bottom plate portion 72 of the polishing tank 52 is immersed in the polishing liquid 50 to become a cathode. A flat plate body (cathode plate) 58 is disposed horizontally.

研磨槽５２の底板部７２の下面中央には、円筒状のボス部７２ａが一体に連接され、このボス部７２ａは、軸受８０を介して回転軸８２の上端のクランク部８２ａに回転自在に連接されている。つまり、このクランク部８２ａの軸心Ｏ１は、回転軸８２の軸心Ｏ２から偏心量ｅだけ偏心した位置に位置し、このクランク部８２ａの軸心Ｏ１とボス部７２ａの軸心が一致するようになっている。また、回転軸８２は、軸受８５ａ，８５ｂを介して外殻部７８に回転自在に支承され、更に、図示していないが、底板部７２と外殻部７８との間に、底板部７２の自転を防止する自転防止機構が備えられている。 A cylindrical boss portion 72 a is integrally connected to the center of the bottom surface of the bottom plate portion 72 of the polishing tank 52, and this boss portion 72 a is rotatably connected to a crank portion 82 a at the upper end of the rotary shaft 82 via a bearing 80. Has been. That is, the axial center O 1 of the crank portion 82a is located at a position eccentric from the axial center O 2 of the rotating shaft 82 by an eccentric amount e, and the axial center O 1 of the crank portion 82a and the axial center of the boss portion 72a are located. It is supposed to match. The rotary shaft 82 is rotatably supported on the outer shell portion 78 via bearings 85a and 85b. Further, although not shown, the rotary shaft 82 is provided between the bottom plate portion 72 and the outer shell portion 78. A rotation prevention mechanism for preventing rotation is provided.

これによって、回転軸８２の回転に伴って、クランク部８２ａが偏心量ｅを半径とした公転運動を行い、このクランク部８２ａの公転運動に伴って、底板部７２も板体５８と一体に偏心量ｅを半径としたスクロール運動（並進回転運動）、即ち、自転運動を阻止された偏心量ｅを半径とした公転運動を行うようになっている。   As a result, the crank portion 82a performs a revolving motion with the eccentric amount e as a radius as the rotating shaft 82 rotates, and the bottom plate portion 72 is also eccentrically integrated with the plate body 58 along with the revolving motion of the crank portion 82a. A scrolling motion (translational rotational motion) with the amount e as the radius, that is, a revolving motion with the eccentricity amount e prevented from rotating as a radius, is performed.

ここで、図１６に示すように、板体５８の直径ｄ３は、直径ｄ４の基板Ｗがスクロール運動を行っても、この板体５８の表面から基板Ｗが食み出すことがない大きさに設定され、また下記の研磨液供給孔５８ｂを内包する研磨液噴射領域の直径ｄ５は、直径ｄ４の基板Ｗがスクロール運動を行っても、この基板Ｗから研磨液噴射領域が食み出すことがない大きさにそれぞれ設定されている。 Here, as shown in FIG. 16, the diameter d 3 of the plate body 58 is large so that the substrate W does not protrude from the surface of the plate body 58 even when the substrate W having the diameter d 4 performs a scroll motion. is set to be, also the diameter d 5 of the polishing liquid ejection area containing a polishing liquid supply hole 58b below, also the substrate W of diameter d 4 is performed scroll movement, the polishing liquid injection region food from the substrate W Each size is set so as not to protrude.

底板部７２の内部には、循環槽８４から延び、途中に圧送ポンプ８６を有する研磨液供給配管８８に連通する研磨液室７２ｂと、この研磨液室７２ｂから上方に貫通して延びる複数の研磨液吐出孔７２ｃが設けられている。循環槽８４は、戻り配管９０を介して研磨槽５２の研磨液排出部７６に連通している。   Inside the bottom plate portion 72, a polishing liquid chamber 72b that extends from the circulation tank 84 and communicates with a polishing liquid supply pipe 88 having a pressure feed pump 86 in the middle, and a plurality of polishings that extend upward from the polishing liquid chamber 72b. A liquid discharge hole 72c is provided. The circulation tank 84 communicates with the polishing liquid discharge part 76 of the polishing tank 52 through the return pipe 90.

一方、板体５８は、例えば銅めっき膜を電解研磨する時に使用する場合には、表面の酸化膜の影響で銅との密着力が悪い材料、例えばチタンで構成されている。これにより、例えば銅めっき膜に電解研磨を施すと、溶解した銅イオンは板体（カソード）５８側に析出するが、板体５８をチタンのような表面の酸化膜の影響で銅との密着力が悪い材料で構成することで、銅イオンを析出すると同時に銅粒子として研磨液中に浮遊させ、しかも、水素ガスの発生を防止して、平坦度に優れた研磨を行うことができる。   On the other hand, when the plate body 58 is used, for example, when electrolytically polishing a copper plating film, the plate body 58 is made of a material having poor adhesion to copper due to the influence of the oxide film on the surface, for example, titanium. Thus, for example, when electrolytic polishing is performed on a copper plating film, dissolved copper ions are deposited on the plate (cathode) 58 side, but the plate 58 is in close contact with copper due to the influence of an oxide film on the surface such as titanium. By using a material having a poor strength, copper ions can be precipitated and simultaneously suspended in the polishing liquid as copper particles, and generation of hydrogen gas can be prevented and polishing with excellent flatness can be performed.

更に、板体５８の表面には、面内を縦及び横方向に全長に亘って直線状に延びる格子状に溝５８ａが設けられ、内部の各研磨液吐出孔７２ｃに対応する位置には、この溝５８ａの内部に開口する複数の研磨液供給孔５８ｂが設けられている。   Furthermore, grooves 58a are provided on the surface of the plate body 58 in a lattice shape extending linearly over the entire length in the longitudinal and lateral directions, and at positions corresponding to the respective polishing liquid discharge holes 72c inside, A plurality of polishing liquid supply holes 58b are provided in the groove 58a.

これによって、電解研磨の際に、研磨液を板体５８の表面に設けた溝５８ａから板体５８と基板Ｗとの間の極間に供給し、この研磨液中に浮遊する粒子を遠心力の作用で溝５８ａの中を通過させて外方にスムーズに流出させることで、極間部には常に新たな研磨液が存在するようにすることができる。しかも、銅めっき膜を電解研磨する時に、板体５８として、チタンのような表面の酸化膜の影響で銅との密着力が悪い材料を選択することで、溶解して板体側に析出する銅イオンを、析出すると同時に銅粒子として研磨液中に浮遊させ、この研磨液を溝５８ａを通過させてスムーズに外部に流出させることで、板体５８の表面の平坦度が経時的に劣化することを防止して、板体５８の平坦度を確保することができる。   Thus, during the electrolytic polishing, the polishing liquid is supplied from the groove 58a provided on the surface of the plate body 58 to the gap between the plate body 58 and the substrate W, and the particles floating in the polishing liquid are subjected to centrifugal force. As a result of passing through the groove 58a and smoothly flowing out by the above action, a new polishing liquid can always be present in the gap portion. Moreover, when the copper plating film is electropolished, copper is dissolved and deposited on the plate body side by selecting a material having poor adhesion to copper due to the influence of the oxide film on the surface, such as titanium, as the plate body 58. At the same time as the ions are deposited, the particles are suspended in the polishing liquid as copper particles, and the polishing liquid passes through the groove 58a and smoothly flows out to the outside, whereby the flatness of the surface of the plate body 58 deteriorates with time. The flatness of the plate body 58 can be ensured.

なお、この溝５８ａの形状は、板体５８の中央部と外周部とで電流密度に差が生じてしまうことを防止するとともに、研磨液が溝５８ａに沿ってスムーズに流れるようにするため、基板Ｗがスクロール運動を行う場合には、格子状であることが好ましく、また基板Ｗが往復動を行う場合には、この移動方向に沿った平行であることが好ましい。   The shape of the groove 58a prevents a difference in current density between the central portion and the outer peripheral portion of the plate body 58, and allows the polishing liquid to flow smoothly along the groove 58a. When the substrate W performs a scrolling motion, it is preferably in a lattice shape, and when the substrate W performs a reciprocating motion, it is preferable that the substrate W be parallel to the moving direction.

基板保持部５６は、下方に開口したハウジング９２の内部に、昇降ロッド９４を介して昇降自在で、かつモータ６０を介してハウジング９２と一体に回転するように収容されており、この基板保持部５６の内部には、真空源に連通する真空室５６ａと、該真空室５６ａから下方に貫通する多数の真空吸着穴５６ｂが設けられている。これによって、基板保持部５６は、真空吸着方式で基板Ｗを保持するようになっている。   The substrate holding part 56 is accommodated in a housing 92 opened downward so as to be movable up and down via a lifting rod 94 and to rotate integrally with the housing 92 via a motor 60. A vacuum chamber 56a communicating with a vacuum source and a number of vacuum suction holes 56b penetrating downward from the vacuum chamber 56a are provided in the interior of 56. Thereby, the substrate holding unit 56 holds the substrate W by a vacuum suction method.

基板Ｗには、通常小さなうねりが有り、基板の保持の仕方によっては更に変形し、この変形した状態で電界研磨による平坦化処理をしても、０．１μｍ以下の平坦化は不可能となるが、このように、真空吸着方式を採用して、基板Ｗをその全面に亘って吸着保持することで、基板に存在するうねりを吸収して、基板をより平坦に保持し、これによって、電界研磨による平坦化処理によって、０．１μｍ以下の平坦化が可能となる。
なお、この真空吸着方式の代わりに、静電チャック方式を採用して基板を保持するようにしても良い。 The substrate W usually has small undulations, and is further deformed depending on how the substrate is held. Even if the surface is flattened by electropolishing in this deformed state, it is impossible to planarize to 0.1 μm or less. In this way, the vacuum suction method is adopted and the substrate W is sucked and held over the entire surface, so that the swells existing on the substrate are absorbed and the substrate is held more flat. By the flattening process by polishing, the flattening of 0.1 μm or less is possible.
Instead of this vacuum suction method, an electrostatic chuck method may be adopted to hold the substrate.

ここで、基板Ｗを基板保持部５６で吸着保持して、基板Ｗを研磨処理を行う処理位置まで下降させた時、この基板Ｗの下面と板体５８の上面との極間距離Ｓが、機構的に可能な限り小さく、好ましくは、１．０ｍｍ以下、更に好ましくは、０．５ｍｍ以下となるようになっている。このように、極間距離Ｓを、機構的に可能な限り小さく、好ましくは、１．０ｍｍ以下、更に好ましくは、０．５ｍｍ以下とすることで、基板Ｗの表面の研磨されるべき凸部への電流の集中を促進し、しかも、基板Ｗと板体５８との間に面に垂直な電界を形成して、基板Ｗの表面（被めっき面）全面にわたって均一な平坦性を得ることができる。   Here, when the substrate W is sucked and held by the substrate holding unit 56 and the substrate W is lowered to the processing position where the polishing process is performed, the inter-electrode distance S between the lower surface of the substrate W and the upper surface of the plate body 58 is It is as small as possible mechanically, preferably 1.0 mm or less, and more preferably 0.5 mm or less. Thus, by making the inter-electrode distance S as small as possible mechanically, preferably 1.0 mm or less, more preferably 0.5 mm or less, the convex portion to be polished on the surface of the substrate W. Current concentration on the substrate W, and an electric field perpendicular to the surface is formed between the substrate W and the plate 58 to obtain uniform flatness over the entire surface of the substrate W (surface to be plated). it can.

ハウジング９２には、基板保持部５６で基板Ｗを吸着保持した時、この基板Ｗのベベル部または周縁部と接触して、基板Ｗを陽極（アノード）にする電気接点９６が設けられ、更に基板保持部５６の下面には、基板Ｗを保持した時に該基板Ｗの上面と圧接してここをシールするパッキン９８が設けられている。   The housing 92 is provided with an electrical contact 96 that contacts the beveled portion or the peripheral portion of the substrate W when the substrate W is sucked and held by the substrate holding portion 56, and makes the substrate W an anode (anode). A packing 98 is provided on the lower surface of the holding portion 56 to seal the surface of the substrate W in pressure contact with the upper surface of the substrate W when the substrate W is held.

次に、電解または化学研磨処理部１８，２０で電解研磨処理を行う時の動作について説明する。
先ず、研磨槽５２内に研磨液５０を供給し、この研磨液５０を溢流堰部７４からオーバフローさせた状態で、底板部７２を板体５８と共にスクロール運動させる。この状態で、前述のようにして、銅めっき等のめっき処理を施した基板Ｗを下向きで吸着保持した基板保持部５６を基板Ｗを回転させつつ、電解研磨処理を行う処理位置まで下降させる。 Next, an operation when the electrolytic polishing process is performed in the electrolytic or chemical polishing processing units 18 and 20 will be described.
First, the polishing liquid 50 is supplied into the polishing tank 52, and the bottom plate portion 72 is scrolled together with the plate body 58 in a state where the polishing liquid 50 overflows from the overflow weir portion 74. In this state, as described above, the substrate holding unit 56 that holds the substrate W subjected to the plating process such as copper plating by suction downward is lowered to the processing position for performing the electropolishing process while rotating the substrate W.

これにより、基板Ｗ上の各ポイントにおける板体５８との相対速度をより均一にして、基板Ｗと板体５８との間の極間を流れる研磨液５０の流れの状態をより均一に、すなわち研磨液の流れに特異点が生じないようにする。   Thereby, the relative speed with respect to the plate body 58 at each point on the substrate W is made more uniform, and the state of the flow of the polishing liquid 50 flowing between the electrodes between the substrate W and the plate body 58 is made more uniform. Do not create singularities in the flow of the polishing liquid.

この状態で、例えば図１７に示すように、印加時間ｔ１が、１ｍＳｅｃ〜２０ｍＳｅｃ、好ましくは１０ｍＳｅｃで、印加電流密度が２〜２０Ａ／ｄｍ２のパルス電流を、例えば印加時間と同じ停止時間ｔ２をおいて、複数回に亘って印加する。すると、研磨電源投入時は、酸化溶出はまず基板上の凸部より起こり、平坦部へ降りてくる。従って、投入後、瞬時に電源をＯＦＦにし、これを繰り返せば凸部のみの選択研磨が可能となる。 In this state, for example, as shown in FIG. 17, a pulse current having an application time t 1 of 1 mSec to 20 mSec, preferably 10 mSec, and an applied current density of 2 to 20 A / dm 2 is set to a stop time t equal to, for example, the application time. 2 is applied several times. Then, when the polishing power is turned on, oxidation elution first occurs from the convex portion on the substrate and falls to the flat portion. Therefore, if the power is turned off instantaneously after being turned on and this is repeated, only the convex portions can be selectively polished.

この時、板体５８の表面に設けた溝５８ａから板体５８と基板Ｗとの間の極間に研磨液を供給し、この研磨液中に浮遊する粒子を遠心力の作用で溝５８ａの中を通過させて外方にスムーズに流出させることで、極間部には常に新たな研磨液が存在するようにする。しかも、銅めっきを電解研磨する時に、板体５８として、チタンのような表面の酸化膜の影響で銅との密着力が悪い材料を選択することで、溶解して板体側に析出する銅イオンを析出すると同時に銅粒子として研磨液中に浮遊させ、この研磨液を溝５８ａを通過させてスムーズに外部に流出させることで、板体５８の表面の平坦度が経時的に劣化することを防止して、板体５８の平坦度を確保することができる。これにより、極間距離Ｓが変化せず、しかも水素ガスが発生することはないので、平坦性に優れた研磨が可能となる。   At this time, a polishing liquid is supplied from the groove 58a provided on the surface of the plate body 58 to the pole between the plate body 58 and the substrate W, and particles floating in the polishing liquid are removed from the groove 58a by the action of centrifugal force. By passing through the inside and smoothly flowing out, a new polishing liquid is always present in the gap portion. In addition, when electrolytically polishing copper plating, a copper ion that dissolves and precipitates on the plate body side is selected as the plate body 58 by selecting a material having poor adhesion to copper due to the influence of an oxide film on the surface such as titanium. At the same time, the copper particles are suspended in the polishing liquid as copper particles, and the polishing liquid flows smoothly through the grooves 58a to prevent the flatness of the surface of the plate body 58 from deteriorating over time. Thus, the flatness of the plate body 58 can be ensured. As a result, the inter-electrode distance S does not change, and hydrogen gas is not generated, so that polishing with excellent flatness is possible.

本発明の実施の形態の配線形成装置の平面配置図である。1 is a plan layout view of a wiring forming apparatus according to an embodiment of the present invention. 図１に使用されている銅めっき処理部の概要図である。It is a schematic diagram of the copper plating process part currently used for FIG. 図１に使用されている電解または化学研磨処理部の概要図である。FIG. 2 is a schematic diagram of an electrolytic or chemical polishing processing unit used in FIG. 1. 電解または化学研磨処理部の他の例を示す概要図である。It is a schematic diagram which shows the other example of an electrolysis or a chemical polishing process part. 図１に示す配線形成装置における処理工程の流れを示す図である。It is a figure which shows the flow of the process process in the wiring formation apparatus shown in FIG. 図５に示す処理工程によって銅配線を形成する時の状態を工程順に示す断面図である。It is sectional drawing which shows the state at the time of forming a copper wiring by the process shown in FIG. 5 in order of a process. 研磨液を使用して電解または化学研磨を行った時の研磨液の粘度及び導電率と研磨効果の関係を示すグラフである。It is a graph which shows the relationship between the viscosity and electrical conductivity of polishing liquid, and the polishing effect when electrolytic polishing or chemical polishing is performed using the polishing liquid. 同じく、液温と研磨効果の関係を示すグラフである。Similarly, it is a graph which shows the relationship between a liquid temperature and a grinding | polishing effect. 同じく、電流波形と研磨効果の関係を示すグラフである。Similarly, it is a graph which shows the relationship between a current waveform and a grinding | polishing effect. 図２に示す処理工程に付加される処理工程の流れを示す図である。It is a figure which shows the flow of the process process added to the process process shown in FIG. 図１０によって銅配線を形成する時の状態を工程順に示す断面図である。It is sectional drawing which shows the state at the time of forming a copper wiring by FIG. 10 in order of a process. 複合電解研磨処理の説明に付する図である。It is a figure attached | subjected to description of a composite electrolytic polishing process. 本発明の他の実施の形態の配線形成装置の平面配置図である。It is a plane | planar arrangement | positioning figure of the wiring formation apparatus of other embodiment of this invention. 図１３に示す配線形成装置における処理工程の流れを示す図である。It is a figure which shows the flow of the process process in the wiring formation apparatus shown in FIG. 電解または化学研磨処理部の更に他の例を断面図である。FIG. 10 is a cross-sectional view of still another example of an electrolytic or chemical polishing treatment unit. 図１５の電解または化学研磨処理部に使用されている板体の平面図である。FIG. 16 is a plan view of a plate used in the electrolytic or chemical polishing processing unit of FIG. 15. 図１５に示す電解または化学研磨処理部に印加する電流パルスの例を示す図である。It is a figure which shows the example of the electric current pulse applied to the electrolysis or chemical polishing process part shown in FIG. 銅めっき処理によって銅配線を形成する例を工程順に示す断面図である。It is sectional drawing which shows the example of forming a copper wiring by copper plating process in order of a process. 従来の基板に銅めっき処理を施した時の問題点の説明に付する断面図である。It is sectional drawing attached to description of a problem when the copper plating process is performed to the conventional board | substrate.

符号の説明Explanation of symbols

２ 酸化膜
３ コンタクトホール
４ 溝
５ バリア膜
５ａ 導電性物質
６ 銅膜
６ａ 銅
７ シード層
１０ ハウジング
１１ ロード・アンロード部
１２ 銅めっき処理部
１４，２２ 洗浄・乾燥処理部
１６ アニール処理部
１８，２０ 電解または化学研磨処理部
２４ 蓋めっき処理部
２５ 搬送経路
２６ 搬送装置
３０ めっき液
３２ めっき槽
５０ 研磨液
５２ 研磨槽
2 Oxide film 3 Contact hole 4 Groove 5 Barrier film 5a Conductive material 6 Copper film 6a Copper 7 Seed layer 10 Housing 11 Load / unload section 12 Copper plating processing section 14, 22 Cleaning / drying processing section 16 Annealing processing section 18, 20 Electrolytic or Chemical Polishing Processing Unit 24 Lid Plating Processing Unit 25 Conveying Path 26 Conveying Device 30 Plating Solution 32 Plating Tank 50 Polishing Solution 52 Polishing Tank

Claims (5)

基板の表面に銅を成膜して該銅を微細窪み内に埋込んだ銅配線を形成する配線形成装置であって、
ハウジングの内部に、基板を搬送する搬送経路に沿って走行自在な搬送装置を設け、この搬送経路に沿って、銅めっき処理部、電解または化学研磨処理部及びアニール処理部を配置したことを特徴とする配線形成装置。 A wiring forming apparatus for forming a copper wiring by forming copper on the surface of a substrate and embedding the copper in a fine recess,
Provided inside the housing is a transport device that can travel along a transport path for transporting a substrate, and a copper plating processing section, an electrolytic or chemical polishing processing section, and an annealing processing section are disposed along the transport path. Wiring forming device. 基板の洗浄を行う洗浄処理部を配置したことを特徴とする請求項１記載の配線形成装置。   The wiring forming apparatus according to claim 1, further comprising a cleaning processing unit that cleans the substrate. 第１段の電解または化学研磨処理と、第２段の電解または化学研磨処理を行う少なくとも２つの研磨処理部を有することを特徴とする請求項１または２記載の配線形成装置。   3. The wiring forming apparatus according to claim 1, further comprising at least two polishing processing units for performing a first stage electrolysis or chemical polishing process and a second stage electrolysis or chemical polishing process. 前記ハウジングの内部に、前記銅配線の露出表面を選択的に覆って保護する保護膜を形成する蓋めっき処理部を配置したことを特徴とする請求項１乃至３のいずれかに記載の配線形成装置。   The wiring formation according to any one of claims 1 to 3, wherein a lid plating treatment part for forming a protective film for selectively covering and protecting the exposed surface of the copper wiring is disposed inside the housing. apparatus. 基板の表面に銅を成膜して該銅を微細窪み内に埋込んだ銅配線を形成するにあたり、
基板の表面に銅を成膜する工程と、
この銅を成膜した基板の表面を研磨液中で電解または化学研磨する研磨処理工程と、
この研磨後の基板表面を洗浄し乾燥させる工程と、
研磨処理工程後に銅膜を基板全面に残した状態で基板に熱処理を施すアニール工程とを有することを特徴とする配線形成方法。 In forming copper wiring on the surface of the substrate and forming the copper wiring in which the copper is embedded in the fine recess,
Forming a copper film on the surface of the substrate;
A polishing process for electrolytically or chemically polishing the surface of the substrate on which the copper film is formed in a polishing liquid;
A step of washing and drying the polished substrate surface;
A wiring forming method comprising: an annealing step of performing a heat treatment on the substrate in a state where the copper film is left on the entire surface of the substrate after the polishing step.
JP2005036786A 2001-03-16 2005-02-14 Device and method of forming wiring Ceased JP2005229121A (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04507326A (en) * 1989-05-08 1992-12-17 アメリカ合衆国 electrochemical planarization
JP2001077117A (en) * 1999-09-07 2001-03-23 Sony Corp Manufacture of semiconductor device, and method and device for polishing
JP2002121698A (en) * 2000-10-13 2002-04-26 Sony Corp Semiconductor manufacturing apparatus and method of manufacturing semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04507326A (en) * 1989-05-08 1992-12-17 アメリカ合衆国 electrochemical planarization
JP2001077117A (en) * 1999-09-07 2001-03-23 Sony Corp Manufacture of semiconductor device, and method and device for polishing
JP2002121698A (en) * 2000-10-13 2002-04-26 Sony Corp Semiconductor manufacturing apparatus and method of manufacturing semiconductor device

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