JP2005189082A - Conduction immunity testing device - Google Patents

Conduction immunity testing device Download PDF

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JP2005189082A
JP2005189082A JP2003430378A JP2003430378A JP2005189082A JP 2005189082 A JP2005189082 A JP 2005189082A JP 2003430378 A JP2003430378 A JP 2003430378A JP 2003430378 A JP2003430378 A JP 2003430378A JP 2005189082 A JP2005189082 A JP 2005189082A
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electromagnetic interference
device under
interference wave
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temperature
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JP3893500B2 (en
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Kumiko Kinoshita
久美子 木下
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Mitsubishi Electric Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a testing device capable of automating determination of an electromagnetic interference wave level and suspension of an experiment of an electrically-operated immunity test. <P>SOLUTION: This conduction immunity testing device 1 has a constitution provided with an electromagnetic interference wave generation part 5 for generating an electromagnetic interference wave, while changing an output level at each prescribed time interval to a device 3 to be tested whose electromagnetic interference wave bearing force is evaluated, a circuit state determination part 9 having a circuit signal detection part 8 for detecting a signal from a circuit included in the device to be tested, for determining that an abnormality occurs when the circuit signal detection part stops detection of the signal, a temperature change measuring part 11 having a temperature detection part 10 for measuring the temperature of the device to be tested, for measuring a temperature variation based on the temperature measured by the temperature detection part at each prescribed time interval when the electromagnetic interference wave generation part changes the output level of the electromagnetic interference wave, and a control part 12 for determining the output level of the electromagnetic interference wave to be applied to the device to be tested at the next point of time at a level not exceeding the temperature variation at the preceding point of time. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、電子機器の信号線や電源線等のケーブル線に電磁妨害波を結合（カップリング）し、被試験装置の電磁妨害波に対する感受性を評価する伝導妨害波感受性試験（以下、伝導イミュニティ試験と称する）を行う装置に関するものであって、特に、伝導イミュニティ試験時に被試験装置に結合する電磁妨害波の入力レベルの調整、誤動作の検出、破壊の確認ならびに試験の停止までを自動で行うものである。   The present invention relates to a conducted disturbance susceptibility test (hereinafter referred to as conduction immunity) in which an electromagnetic disturbance wave is coupled (coupled) to a cable line such as a signal line or a power supply line of an electronic device to evaluate the sensitivity of the device under test to the electromagnetic disturbance wave. In particular, it automatically adjusts the input level of the electromagnetic interference wave coupled to the device under test during conduction immunity testing, detects malfunctions, confirms breakdown, and automatically stops testing. Is.

従来、伝導イミュニティ試験を行う装置は、個別の試験構成部を組合せて、互いに接続することで試験系を構成してきた。個別の試験構成部とは、外部から電磁妨害波が結合されて、電磁妨害波耐力が評価される対象装置である被試験装置、被試験装置に結合する電磁妨害波を発生するシグナルジェネレータ、被試験装置と接続されたケーブルにシグナルジェネレータが発生した電磁妨害波を結合するプローブ、波形観測のオシロスコープなどがある。また、特開２０００−３０４７９４号公報には、通信機器を被試験装置とする伝導イミュニティ試験装置が開示されている。   Conventionally, devices that conduct conduction immunity tests have configured test systems by combining individual test components and connecting them together. The individual test components include a device under test that is a target device whose electromagnetic interference wave resistance is evaluated by coupling electromagnetic interference waves from the outside, a signal generator that generates an electromagnetic interference wave coupled to the device under test, There are probes that couple electromagnetic interference generated by a signal generator to a cable connected to the test equipment, and an oscilloscope for waveform observation. Japanese Laid-Open Patent Publication No. 2000-304794 discloses a conduction immunity test apparatus using a communication device as a device under test.

特許公開２０００−３０４７９４号公報Japanese Patent Publication No. 2000-304794

しかしながら、一般的な伝導イミュニティ試験装置は、試験中の電磁妨害波の入力レベルを電磁妨害波印加後、被試験装置の状態を試験員が確認してからその都度調整しなければならず操作性が極めて悪かった。また、電磁妨害波の入力レベルの決定には作業者の熟練が必要であるため、測定結果には作業者によるバラつきが含まれてしまい、収集データの精度や再現性にも問題があった。   However, in general conducted immunity test equipment, the input level of the electromagnetic interference wave under test must be adjusted each time after the tester confirms the state of the device under test after applying the electromagnetic interference wave. Was extremely bad. In addition, since determination of the input level of electromagnetic interference waves requires the skill of the operator, the measurement results include variations due to the operator, and there is a problem in the accuracy and reproducibility of the collected data.

さらに、従来の試験系では被試験装置が破壊された場合、試験員が手動で装置を停止させなければならないため、被試験装置の破壊に試験員が気付くのが遅れると試験系において無駄な電力が消費されるという問題もあった。   Furthermore, in the conventional test system, if the device under test is destroyed, the tester must manually stop the device. Therefore, if the tester is delayed in noticing the device under test, the test system wastes power. There was also a problem that was consumed.

本発明に係る伝導イミュニティ試験装置は、外部から印加された電磁妨害波に対する電磁妨害波耐力が評価される被試験装置に対して、所定時間間隔ごとに出力レベルを変化させながら電磁妨害波を発生させる電磁妨害波発生部と、前記被試験装置に含まれる回路上において信号を伝達する回路パターンより信号を検出する回路信号検出部が前記回路パターンの信号を検出しなくなった場合に、前記被試験装置に異常が発生したと判定する回路状態判定部と、前記電磁妨害波発生部が電磁妨害波の出力レベルを変化させる所定時間間隔ごとに、前記被試験装置の前記回路パターンに形成された素子や前記被試験装置内部の雰囲気温度を測定する温度検出部が測定した温度に基づいて温度変化量を測定する温度変化測定部と、次回、前記被試験装置に印加する電磁妨害波の出力レベルを、前記温度変化測定部が測定した直近の温度変化量を超えないレベルに決定するとともに、決定された次回出力レベルの電磁妨害波を前記電磁妨害波発生部に発生させる処理を継続させ、前記回路状態判定部が前記被試験装置に異常が発生したと判定した場合、前記電磁妨害波発生部が前記被試験装置に電磁妨害波を印加する処理を停止させる制御部を設けたものである。   The conduction immunity test apparatus according to the present invention generates an electromagnetic interference wave while changing the output level at predetermined time intervals with respect to a device under test whose electromagnetic interference wave resistance against an externally applied electromagnetic interference wave is evaluated. And when the circuit signal detector that detects the signal from the circuit pattern that transmits the signal on the circuit included in the device under test no longer detects the signal of the circuit pattern, A circuit state determination unit that determines that an abnormality has occurred in the device, and an element formed in the circuit pattern of the device under test at predetermined time intervals at which the electromagnetic interference wave generation unit changes the output level of the electromagnetic interference wave And a temperature change measuring unit that measures the amount of temperature change based on the temperature measured by the temperature detecting unit that measures the ambient temperature inside the device under test, and next time, the device under test The output level of the electromagnetic interference wave applied to the device is determined to be a level that does not exceed the latest temperature change amount measured by the temperature change measurement unit, and the electromagnetic interference wave of the next output level that is determined is generated. When the circuit state determination unit determines that an abnormality has occurred in the device under test, the electromagnetic wave generation unit stops the process of applying the electromagnetic wave to the device under test. The control part to be made is provided.

本発明に係る伝導イミュニティ試験装置は、外部から印加された電磁妨害波に対する電磁妨害波耐力が評価される被試験装置に対して、所定時間間隔ごとに出力レベルを変化させながら電磁妨害波を発生させる電磁妨害波発生部と、前記被試験装置に含まれる回路上において信号を伝達する回路パターンより信号を検出する回路信号検出部が前記回路パターンの信号を検出しなくなった場合に、前記被試験装置に異常が発生したと判定する回路状態判定部と、前記電磁妨害波発生部が電磁妨害波の出力レベルを変化させる所定時間間隔ごとに、前記被試験装置の前記回路パターンに形成された素子や前記被試験装置内部の雰囲気温度を測定する温度検出部が測定した温度に基づいて温度変化量を測定する温度変化測定部と、次回、前記被試験装置に印加する電磁妨害波の出力レベルを、前記温度変化測定部が測定した直近の温度変化量を超えないレベルに決定するとともに、決定された次回出力レベルの電磁妨害波を前記電磁妨害波発生部に発生させる処理を継続させ、前記回路状態判定部が前記被試験装置に異常が発生したと判定した場合、前記電磁妨害波発生部が前記被試験装置に電磁妨害波を印加する処理を停止させる制御部を設けたので、被試験装置に異常が発生する「破壊レベル」付近で、電磁妨害波のレベルを小刻みに変化させることが可能となり、「破壊レベル」付近の被試験装置の温度データを精密に測定することが可能となる。また、電磁妨害波のレベル変化量を固定した状態で試験を行うよりも試験時間を短縮できる。   The conducted immunity test apparatus according to the present invention generates an electromagnetic interference wave while changing the output level at predetermined time intervals with respect to a device under test whose electromagnetic interference resistance against an externally applied electromagnetic interference wave is evaluated. And when the circuit signal detector that detects the signal from the circuit pattern that transmits the signal on the circuit included in the device under test no longer detects the signal of the circuit pattern, A circuit state determination unit that determines that an abnormality has occurred in the device, and an element formed in the circuit pattern of the device under test at predetermined time intervals at which the electromagnetic interference wave generation unit changes the output level of the electromagnetic interference wave And a temperature change measuring unit that measures the amount of temperature change based on the temperature measured by the temperature detecting unit that measures the ambient temperature inside the device under test, and next time, the device under test The output level of the electromagnetic interference wave applied to the device is determined to a level that does not exceed the latest temperature change amount measured by the temperature change measurement unit, and the electromagnetic interference wave of the next output level determined is generated. When the circuit state determination unit determines that an abnormality has occurred in the device under test, the electromagnetic wave generation unit stops the process of applying the electromagnetic wave to the device under test. Since the control unit is provided, it is possible to change the level of the electromagnetic interference wave little by little near the “destruction level” where the abnormality occurs in the device under test. The temperature data of the device under test near the “destruction level” Can be measured accurately. Further, the test time can be shortened compared with the case where the test is performed in a state where the level change amount of the electromagnetic interference wave is fixed.

実施の形態１．
図１は本発明の実施の形態１に係る伝導イミュニティ試験装置の構成を示すブロック図である。電磁妨害波の発生や、電磁妨害波のレベルの制御、被試験装置に設けられた各種センサから得られた信号の解析を行い、電磁妨害波のレベルを決定し、決定されたレベルで電磁妨害波を発生させる伝導イミュニティ試験装置１は、電磁妨害波結合部２を用いて被試験装置３のケーブル４に電磁妨害波を結合（カップリング）させる。伝導イミュニティ試験装置１は、電磁妨害波発生部５、電磁妨害波発生部５が出力した電磁妨害波を測定する電磁妨害波測定部６、電磁妨害波発生部５が出力した電磁妨害波を増幅する増幅部７を備えている。 Embodiment 1 FIG.
FIG. 1 is a block diagram showing a configuration of a conduction immunity test apparatus according to Embodiment 1 of the present invention. Generate electromagnetic interference, control the level of electromagnetic interference, analyze signals obtained from various sensors installed in the device under test, determine the level of electromagnetic interference, and use the determined level for electromagnetic interference The conduction immunity test apparatus 1 that generates a wave couples (couples) an electromagnetic interference wave to the cable 4 of the device under test 3 using the electromagnetic interference wave coupling unit 2. The conducted immunity test apparatus 1 includes an electromagnetic interference wave generation unit 5, an electromagnetic interference wave measurement unit 6 that measures the electromagnetic interference wave output from the electromagnetic interference wave generation unit 5, and an electromagnetic interference wave output from the electromagnetic interference wave generation unit 5. An amplifying unit 7 is provided.

また、伝導イミュニティ試験装置１は、被試験装置３内部の電気回路や電子回路に流れる信号の状態を検出するセンサである回路信号検出部８からの信号に基づいて、被試験装置３内部の回路が破壊されたか判定する回路状態判定部９、被試験装置３内部に設けられて、被試験装置の素子温度や雰囲気温度を検出するセンサである温度検出部１０からの信号に基づいて、電磁妨害波が印加された被試験装置３内部の温度の変移量を測定する温度変化測定部１１、温度変化測定部１１が測定した被試験装置３内部の温度の変移量に基づいて電磁妨害波のレベルを制御するとともに、回路状態判定部９が被試験装置３内部の回路に異常が発生したことを検出したときには電磁妨害波の出力を停止して、伝導イミュニティ試験を終了させる制御部１２、伝導イミュニティ試験中に被試験装置３に結合した電磁妨害波のレベルを記録するレベル記録部１３をさらに備える。   Further, the conduction immunity test apparatus 1 is configured so that a circuit inside the device under test 3 is based on a signal from a circuit signal detector 8 that is a sensor that detects a state of a signal flowing through an electric circuit or an electronic circuit inside the device under test 3. Circuit state determination unit 9 for determining whether or not the device has been destroyed, electromagnetic interference based on a signal from a temperature detection unit 10 which is provided in the device under test 3 and detects the element temperature and the ambient temperature of the device under test A temperature change measuring unit 11 for measuring a temperature shift amount inside the device under test 3 to which a wave is applied, and a level of electromagnetic interference based on the temperature shift amount inside the device under test 3 measured by the temperature change measuring unit 11 When the circuit state determination unit 9 detects that an abnormality has occurred in the circuit inside the device under test 3, the control unit 1 stops the output of the electromagnetic interference wave and ends the conduction immunity test. Further comprising a level recording section 13 for recording the level of electromagnetic interference coupled to the device under test 3 during conduction immunity test.

図２は電磁妨害波発生部５が出力する電磁妨害波が矩形パルス波である場合の波形を示す図である。図３は電磁妨害波発生部５が出力する電磁妨害波がサージ耐圧試験波である場合の波形を示す図である。また、図４は、時間（電磁妨害波の入力タイミング）と電磁妨害波のレベルの関係を示す図である。図４は、ｔ０〜ｔｎに時間が経過するのに伴い、より強いレベルの電磁妨害波が被試験装置３に結合されることを示している。図５は、時間（電磁妨害波の入力タイミング）と被試験装置３の温度の関係を示す図である。図５は、電磁妨害波を所定のタイミング（ｔ０〜ｔｎ）で図４に示したレベルの電磁妨害波を結合したときに被試験装置３内部で発生する温度が上昇することを示している。 FIG. 2 is a diagram showing a waveform when the electromagnetic interference wave output from the electromagnetic interference wave generator 5 is a rectangular pulse wave. FIG. 3 is a diagram showing a waveform when the electromagnetic interference wave output from the electromagnetic interference wave generator 5 is a surge withstand voltage test wave. FIG. 4 is a diagram showing the relationship between time (electromagnetic interference wave input timing) and electromagnetic interference wave level. FIG. 4 shows that a stronger electromagnetic interference wave is coupled to the device under test 3 as time elapses from t 0 to t n . FIG. 5 is a graph showing the relationship between time (input timing of electromagnetic interference waves) and the temperature of the device under test 3. FIG. 5 shows that the temperature generated inside the device under test 3 rises when the electromagnetic interference wave is combined with the electromagnetic interference wave of the level shown in FIG. 4 at a predetermined timing (t 0 to t n ). Yes.

以下、図１〜図４を用いて、本願発明に係る伝導イミュニティ試験装置の動作について説明する。伝導イミュニティ試験を開始するにあたり、被試験装置３内部の回路に流れる信号の状態を検出して回路状態判定部９に出力する回路信号検出部８を、被試験装置３内部の回路に設置する。回路状態判定部９は、被試験装置３が正常に動作しているときに回路に流れる信号が途絶えたことを回路信号検出部８が検出すると、被試験装置３内部の回路に異常が発生したと判断する。また、被試験装置３内部の素子温度や雰囲気温度を検出して温度変化測定部１１に出力する温度検出部１０を被試験装置３内部に設置する。温度変化測定部１１は、電磁妨害波が被試験装置３に結合された状態で生じる、回路素子や基板、装置内部の雰囲気温度を温度検出部１０によって検出するとともに、その温度変化を測定する。   Hereinafter, the operation of the conduction immunity test apparatus according to the present invention will be described with reference to FIGS. When the conduction immunity test is started, a circuit signal detection unit 8 that detects the state of a signal flowing in a circuit inside the device under test 3 and outputs it to the circuit state determination unit 9 is installed in the circuit inside the device under test 3. When the circuit signal detection unit 8 detects that the signal flowing through the circuit is interrupted when the device under test 3 is operating normally, the circuit state determination unit 9 generates an abnormality in the circuit inside the device under test 3. Judge. In addition, a temperature detection unit 10 that detects an element temperature and an atmospheric temperature inside the device under test 3 and outputs it to the temperature change measurement unit 11 is installed inside the device under test 3. The temperature change measurement unit 11 detects the ambient temperature inside the circuit element, the substrate, and the device generated in a state where the electromagnetic interference wave is coupled to the device under test 3 by the temperature detection unit 10 and measures the temperature change.

次に、被試験装置３の電源を入れ、被試験装置３を正常な動作状態にする。この時点で回路状態判定部９は回路信号検出部８を介して、被試験装置３内部の回路に通常想定されるとおりの信号が流れているか判定して被試験装置３が正常な動作状態にあることを確認する。被試験装置３を動作させた状態で、回路状態判定部９が被試験装置３内部の一部ないし全部の回路で信号が流れていないことを検出した場合、制御部１２は被試験装置３が初期不良品であると判定し試験を中止する。回路状態判定部９が異常を検出しない場合、制御部１２は引き続き、電磁妨害波発生部５に発生させる電磁妨害波の波形を設定する。例えば、入力波形の例として、図２に示す矩形パルス波形を用いて伝導イミュニティ試験を行う場合には、パルス幅ＰＷやパルス繰り返し周波数ＰＲＦを設定する。また、図３に示すサージ耐圧試験波を用いて伝導イミュニティ試験を行う場合には、ピーク電圧Ｖpの９０％値であるＶ90に到達するまでの時間ｔ90、およびピーク電圧Ｖpの１０％値であるＶ10に到達するまでの時間ｔ10を定め、被試験装置３に結合する波形を決定する。 Next, the device under test 3 is turned on to bring the device under test 3 into a normal operating state. At this time, the circuit state determination unit 9 determines whether a signal as normally assumed is flowing in the circuit inside the device under test 3 via the circuit signal detection unit 8, and the device under test 3 is in a normal operating state. Make sure that there is. When the circuit under test 3 detects that no signal is flowing through some or all of the circuits inside the device under test 3 while the device under test 3 is in operation, the control unit 12 Judged as an initial defective product and stopped the test. When the circuit state determination unit 9 does not detect any abnormality, the control unit 12 continues to set the waveform of the electromagnetic interference wave generated by the electromagnetic interference wave generation unit 5. For example, when conducting a conduction immunity test using the rectangular pulse waveform shown in FIG. 2 as an example of the input waveform, the pulse width PW and the pulse repetition frequency PRF are set. When conducting a conduction immunity test using the surge withstand voltage test wave shown in FIG. 3, a time t 90 until reaching 90 , which is 90% of the peak voltage Vp, and a 10% value of the peak voltage Vp. A time t 10 until reaching V 10 is determined, and a waveform to be coupled to the device under test 3 is determined.

入力波形が設定されれば、制御部１２は、電磁妨害波発生部５に被試験装置３に結合する初期レベルＶt1の電磁妨害波を発生させる。電磁妨害波発生部５により生成された電磁妨害波は増幅部７において増幅される。増幅部７で増幅された電磁妨害波は電磁妨害波結合部２を介して被試験装置３のケーブル４に結合される。このケーブル４を介して被試験装置３には電磁妨害波が印加されることになる。なお、電磁妨害波結合部２は一般的に非接触型のプローブが用いられる。また、電磁妨害波発生部５が発生した電磁妨害波の出力波形は、電磁妨害波測定部６において測定、記録されており、必要に応じて試験者が確認することができる。   When the input waveform is set, the control unit 12 causes the electromagnetic interference wave generation unit 5 to generate an electromagnetic interference wave of the initial level Vt1 coupled to the device under test 3. The electromagnetic interference wave generated by the electromagnetic interference wave generator 5 is amplified by the amplifier 7. The electromagnetic interference wave amplified by the amplifying unit 7 is coupled to the cable 4 of the device under test 3 via the electromagnetic interference wave coupling unit 2. An electromagnetic interference wave is applied to the device under test 3 via the cable 4. The electromagnetic interference wave coupling unit 2 is generally a non-contact type probe. The output waveform of the electromagnetic interference wave generated by the electromagnetic interference wave generation unit 5 is measured and recorded by the electromagnetic interference wave measurement unit 6 and can be confirmed by the tester as necessary.

伝導イミュニティ試験装置１が、時間ｔ１のタイミングでＶｔ１の電磁妨害波を、電磁妨害波結合部２を介してケーブル４に結合すると、被試験装置３にはＶｔ１の電磁妨害波が印加される。このとき、図５に示すように、温度検出部１０は被試験装置３の測定部位における温度がＴｔ１に達したことを検出する。そして、温度変化測定部１１は電磁妨害波を印加する前の被試験装置３の測定部位における温度Ｔｔ０を、時間ｔ１のタイミングでＶｔ１の電磁妨害波を被試験装置３に印加した時の被試験装置３の測定部位における温度Ｔｔ１から引くことにより、温度上昇の変化量ΔＴ０１を求めることができる。なお、温度検出部１０は被試験装置３の回路や素子、あるいは内部の雰囲気温度を検出するために複数個配設されるのであるが、上記説明は複数個配設された温度検出部１０のうちの任意の１個の動作について説明したものである。温度変化測定部１１には複数の温度検出部１０それぞれが検出した各測定部位の温度が入力されており、各測定部位の温度に基づいてそれぞれ温度変化量を求めている。 When the conduction immunity test apparatus 1 couples the electromagnetic interference wave of V t1 to the cable 4 via the electromagnetic interference wave coupling unit 2 at the timing of time t 1 , the electromagnetic interference wave of V t1 is applied to the device under test 3. Is done. At this time, as shown in FIG. 5, the temperature detection unit 10 detects that the temperature at the measurement site of the device under test 3 has reached T t1 . The temperature change measuring unit 11 applies the temperature T t0 at the measurement site of the device under test 3 before applying the electromagnetic interference wave, and applies the electromagnetic interference wave of V t1 to the device under test 3 at the timing of time t 1. By subtracting from the temperature T t1 at the measurement site of the device under test 3, the temperature rise change ΔT 01 can be obtained. Note that a plurality of temperature detectors 10 are provided for detecting circuits and elements of the device under test 3 or the internal ambient temperature, but the above description is based on the plurality of temperature detectors 10 provided. The operation of any one of them will be described. The temperature change measurement unit 11 receives the temperature of each measurement site detected by each of the plurality of temperature detection units 10, and obtains the temperature change amount based on the temperature of each measurement site.

制御部１２は、温度変化測定部１１が測定したｔ１時点の温度変化ΔＴ０１に基づいて、次のタイミングｔ２時点で印加するべき電磁妨害波のレベルを決定する。具体的には、タイミングｔ２時点で印加するべき電磁妨害波のレベルは、その温度変化量が、タイミングｔ１時点の温度変化ΔＴ０１よりも小さくなるように決定される。つまり、タイミングｔ１時点の電磁妨害波のレベル変化量は図４に示されるとおりΔＶ０１であるが、タイミングｔ２時点の電磁妨害波のレベル変化量ΔＶ１２を、タイミングｔ１時点の電磁妨害波のレベル変化量ΔＶ０１よりも小さくすることにより、タイミングｔ２時点の電磁妨害波のレベルＶｔ２（Ｖｔ１+ΔＶ１２）を被試験装置３に印加した場合の温度変化量ΔＴ１２はタイミングｔ１時点の温度変化ΔＴ０１よりも低く抑えられる。なお、電磁妨害波のレベルを決定する根拠となる温度変化量は、複数の温度検出部１０のうち、いずれの温度検出部１０が検出した温度をもとに算出するのか問題になるが、最も顕著な温度上昇を検出した温度検出部１０が測定した温度に基づいて求めればよい。また、被試験装置によっては、複数の温度検出部１０が測定した温度の平均値に基づいて電磁妨害波のレベルを決定してもよいし、任意の個所に配設された温度検出部１０が測定した温度に基づいて電磁妨害波のレベルを決定してもよい。 Control unit 12, based on the temperature change [Delta] T 01 of t 1 at which the temperature change measuring unit 11 has measured, to determine the level of electromagnetic interference to be applied at the second time point next timing t. Specifically, the level of electromagnetic interference to be applied at the timing t 2 time, the temperature change is determined to be smaller than the temperature change [Delta] T 01 of the timing t 1 point. That is, the level change amount of the electromagnetic interference wave at the timing t 1 is ΔV 01 as shown in FIG. 4, but the level change amount ΔV 12 of the electromagnetic interference wave at the timing t 2 is set to the electromagnetic interference at the timing t 1. By making it smaller than the wave level variation ΔV 01 , the temperature variation ΔT 12 when the electromagnetic interference wave level V t2 (V t1 + ΔV 12 ) at the timing t 2 is applied to the device under test 3 is the timing. It is suppressed to be lower than the temperature change ΔT 01 at time t 1 . It should be noted that the amount of temperature change that is the basis for determining the level of the electromagnetic interference wave is a problem of which one of the plurality of temperature detection units 10 is calculated based on the temperature detected by the temperature detection unit 10. What is necessary is just to obtain | require based on the temperature which the temperature detection part 10 which detected the remarkable temperature rise measured. Further, depending on the device under test, the level of the electromagnetic interference wave may be determined based on the average value of the temperatures measured by the plurality of temperature detection units 10, or the temperature detection unit 10 disposed at an arbitrary location may be used. The level of electromagnetic interference may be determined based on the measured temperature.

制御部１２は、次タイミング時点の電磁妨害波のレベルを決定すると、その値をレベル記録部１３に記録する。そして、制御部１２は、回路状態判定部９が被試験装置３の回路状態を正常と判定する限り、次タイミング時点の電磁妨害波を被試験装置３に印加する。このように、制御部１２は、回路状態判定部９が被試験装置３の異常を検出して電磁妨害波の印加を停止させるまで伝導イミュニティ試験を継続する。一方、回路状態判定部９が被試験装置３内部の一部または全部の回路に信号が流れていないことを検出すると、被試験装置３に異常が発生したと判定する。制御部１２は回路状態判定部９が被試験装置３に異常が発生したと判定すると、電磁妨害波の印加を停止させることで伝導イミュニティ試験を終了させる。そして、回路状態判定部９が被試験装置３の異常を検出していたときに、被試験装置３に印加していた電磁妨害波の値を、被試験装置３が正常に動作する電磁妨害波耐力の限界である「破壊レベル」として記録する。   When determining the level of the electromagnetic interference wave at the next timing, the control unit 12 records the value in the level recording unit 13. Then, as long as the circuit state determination unit 9 determines that the circuit state of the device under test 3 is normal, the control unit 12 applies the electromagnetic interference wave at the next timing to the device under test 3. Thus, the control unit 12 continues the conduction immunity test until the circuit state determination unit 9 detects an abnormality in the device under test 3 and stops the application of the electromagnetic interference wave. On the other hand, when the circuit state determination unit 9 detects that no signal is flowing in some or all of the circuits in the device under test 3, it determines that an abnormality has occurred in the device under test 3. If the circuit state determination unit 9 determines that an abnormality has occurred in the device under test 3, the control unit 12 terminates the conduction immunity test by stopping the application of the electromagnetic interference wave. When the circuit state determination unit 9 detects an abnormality in the device under test 3, the value of the electromagnetic interference wave applied to the device under test 3 is used as the electromagnetic interference wave in which the device under test 3 operates normally. Record as the “destructive level” which is the limit of proof stress.

上記説明の伝導イミュニティ試験装置は、次タイミング時点に印加する電磁妨害波のレベルを、次タイミング時点の温度変化量が前タイミング時点の温度変化量を超えないように設定することにより、電磁妨害波のレベル変化量が電磁妨害波の「破壊レベル」に近づくのに伴って小さくなる。したがって、「破壊レベル」付近の電磁妨害波のレベルを小刻みに変化させることが可能となり、「破壊レベル」付近の被試験装置３の温度データを精密に測定することが可能となる。また、先の説明のとおり、上記説明の伝導イミュニティ試験装置は、電磁妨害波のレベル変化量を、伝導イミュニティ試験開始当初の電磁妨害波のレベル変化量は大きく、「破壊レベル」に近づくのに伴い小さくするように被試験装置３内部の温度変化量に応じて制御するので、電磁妨害波のレベル変化量を固定した状態で試験を行うよりも試験時間を短縮できる。また、上記説明の伝導イミュニティ試験装置は、被試験装置３の回路状態を、回路に流れる信号を検出する複数のセンサを設け、一部または全部のセンサが信号を検出できなくなった場合に、被試験装置３に異常が発生したものと判定して、伝導イミュニティ試験を終了させている。したがって、伝導イミュニティ試験を自動的に終了させることができる。   The conduction immunity test apparatus described above sets the level of electromagnetic interference applied at the next timing so that the amount of temperature change at the next timing does not exceed the amount of temperature change at the previous timing. As the level change amount approaches the “destruction level” of the electromagnetic interference wave, it becomes smaller. Therefore, it is possible to change the level of the electromagnetic interference wave in the vicinity of the “destruction level” in small increments, and it becomes possible to accurately measure the temperature data of the device under test 3 in the vicinity of the “destruction level”. In addition, as described above, the conduction immunity test apparatus described above has a large amount of electromagnetic interference wave level change, and the amount of electromagnetic interference wave level change at the beginning of the conduction immunity test is large. Since the control is performed in accordance with the temperature change amount inside the device under test 3 so as to reduce the test time, the test time can be shortened compared with the case where the test is performed with the level change amount of the electromagnetic interference wave fixed. In addition, the conduction immunity test apparatus described above is provided with a plurality of sensors for detecting the signal flowing through the circuit in the circuit state of the apparatus under test 3, and when some or all of the sensors cannot detect the signal, It is determined that an abnormality has occurred in the test apparatus 3, and the conduction immunity test is terminated. Therefore, the conduction immunity test can be automatically terminated.

なお、上記説明に係る伝導イミュニティ試験装置は、被試験装置３の異常を被試験装置３内部の温度を測定することにより判定していた。しかし、温度のような物理的パラメータのみならず、電界強度のような電磁気的パラメータや、オゾン濃度のような化学的パラメータを監視して異常を判定するようにしてもよい。   Note that the conduction immunity test apparatus according to the above description determines the abnormality of the device under test 3 by measuring the temperature inside the device under test 3. However, not only physical parameters such as temperature but also electromagnetic parameters such as electric field intensity and chemical parameters such as ozone concentration may be monitored to determine abnormality.

実施の形態２．
図６は本発明の実施の形態２に係る伝導イミュニティ試験装置の構成を示す図である。図６において、図１と同じ符号は同一または相当部分を示すので説明は省略する。図６に示す伝導イミュニティ試験装置１は、図１に示す伝導イミュニティ試験装置１に、被試験装置３に異常が発生したときに警報を発する警報部１４を設けたものである。伝導イミュニティ試験の実施方法は、実施の形態１にて説明したものと同様であるが、制御部１２が被試験装置３の異常を示す信号を受信した場合、制御部１２は電磁妨害波発生部５に電磁妨害波の出力を停止させる信号を出力するとともに、警報部１４に警報を発するよう指示信号を出力する。これにより電磁妨害波発生部５は電磁妨害波の出力を停止し試験は中止となり、同時に警報部１４は警報を発することで試験員に試験終了を報知する。 Embodiment 2. FIG.
FIG. 6 is a diagram showing a configuration of a conduction immunity test apparatus according to Embodiment 2 of the present invention. In FIG. 6, the same reference numerals as those in FIG. The conduction immunity test apparatus 1 shown in FIG. 6 includes the conduction immunity test apparatus 1 shown in FIG. 1 provided with an alarm unit 14 that issues an alarm when an abnormality occurs in the device under test 3. The method of conducting the conduction immunity test is the same as that described in the first embodiment, but when the control unit 12 receives a signal indicating an abnormality of the device under test 3, the control unit 12 5 outputs a signal for stopping the output of the electromagnetic interference wave, and outputs an instruction signal to the alarm unit 14 to issue an alarm. As a result, the electromagnetic interference wave generation unit 5 stops the output of the electromagnetic interference wave and the test is stopped. At the same time, the alarm unit 14 notifies the tester of the end of the test by issuing an alarm.

図１は本発明の実施の形態１に係る伝導イミュニティ試験装置の構成を示すブロック図である。FIG. 1 is a block diagram showing a configuration of a conduction immunity test apparatus according to Embodiment 1 of the present invention. 図２は電磁妨害波発生部５が出力する電磁妨害波が矩形パルス波である場合の波形を示す図である。FIG. 2 is a diagram showing a waveform when the electromagnetic interference wave output from the electromagnetic interference wave generator 5 is a rectangular pulse wave. 図３は電磁妨害波発生部５が出力する電磁妨害波がサージ耐圧試験波である場合の波形を示す図である。FIG. 3 is a diagram showing a waveform when the electromagnetic interference wave output from the electromagnetic interference wave generator 5 is a surge withstand voltage test wave. 図４は時間（電磁妨害波の入力タイミング）と電磁妨害波のレベルの関係を示す図である。FIG. 4 is a diagram showing the relationship between time (electromagnetic interference wave input timing) and electromagnetic interference wave level. 図５は時間（電磁妨害波の入力タイミング）と被試験装置３の温度の関係を示す図である。FIG. 5 is a diagram showing the relationship between time (input timing of electromagnetic interference waves) and the temperature of the device under test 3. 図６は本発明の実施の形態２に係る伝導イミュニティ試験装置の構成を示す図である。FIG. 6 is a diagram showing a configuration of a conduction immunity test apparatus according to Embodiment 2 of the present invention.

符号の説明Explanation of symbols

１ 伝導イミュニティ試験装置、２ 電磁妨害波結合部、３ 被試験装置、
４ ケーブル、５ 電磁妨害波発生部、６ 電磁妨害波測定部、７ 増幅部、
８ 回路信号検出部、９ 回路状態判定部、１０ 温度検出部、１１ 温度変化測定部、１２ 制御部、１３ レベル記録部、１４ 警報部
1 Conducted immunity test device, 2 Electromagnetic interference coupling part, 3 Device under test,
4 cable, 5 electromagnetic interference wave generation part, 6 electromagnetic interference wave measurement part, 7 amplification part,
8 Circuit signal detection unit, 9 Circuit state determination unit, 10 Temperature detection unit, 11 Temperature change measurement unit, 12 Control unit, 13 Level recording unit, 14 Alarm unit

Claims (2)

外部から印加された電磁妨害波に対する電磁妨害波耐力が評価される被試験装置に対して、所定時間間隔ごとに出力レベルを変化させながら電磁妨害波を発生させる電磁妨害波発生部と、
前記被試験装置に含まれる回路上において信号を伝達する回路パターンより信号を検出する回路信号検出部が前記回路パターンの信号を検出しなくなった場合に、前記被試験装置に異常が発生したと判定する回路状態判定部と、
前記電磁妨害波発生部が電磁妨害波の出力レベルを変化させる所定時間間隔ごとに、前記被試験装置の前記回路パターンに形成された素子や前記被試験装置内部の雰囲気温度を測定する温度検出部が測定した温度に基づいて温度変化量を測定する温度変化測定部と、
次回、前記被試験装置に印加する電磁妨害波の出力レベルを、前記温度変化測定部が測定した直近の温度変化量を超えないレベルに決定するとともに、決定された次回出力レベルの電磁妨害波を前記電磁妨害波発生部に発生させる処理を継続させ、前記回路状態判定部が前記被試験装置に異常が発生したと判定した場合に、前記電磁妨害波発生部が前記被試験装置に電磁妨害波を印加する処理を停止させる制御部を設けたことを特徴とする伝導イミュニティ試験装置。 For the device under test whose electromagnetic interference resistance against externally applied electromagnetic interference is evaluated, an electromagnetic interference generation unit that generates an electromagnetic interference while changing the output level every predetermined time interval;
When a circuit signal detector that detects a signal from a circuit pattern that transmits a signal on a circuit included in the device under test no longer detects the signal of the circuit pattern, it is determined that an abnormality has occurred in the device under test. A circuit state determination unit to perform,
A temperature detection unit that measures an element formed in the circuit pattern of the device under test and an atmospheric temperature inside the device under test at every predetermined time interval when the electromagnetic wave generation unit changes the output level of the electromagnetic wave interference A temperature change measurement unit that measures the amount of temperature change based on the temperature measured by
Next, the output level of the electromagnetic interference wave applied to the device under test is determined to a level that does not exceed the latest temperature change amount measured by the temperature change measurement unit, and the electromagnetic interference wave of the determined next output level is determined. When the processing to be generated by the electromagnetic interference wave generation unit is continued, and the circuit state determination unit determines that an abnormality has occurred in the device under test, the electromagnetic interference wave generation unit generates an electromagnetic interference wave in the device under test. A conduction immunity test apparatus provided with a control unit for stopping the process of applying the. 制御部は、前記回路状態判定部が前記被試験装置に異常が発生したと判定すると、前記電磁妨害発生部が前記被試験装置に電磁妨害波を印加する処理を停止させることを報知する警報部を設けたことを特徴とする請求項１に記載の伝導イミュニティ試験装置。

The control unit, when the circuit state determination unit determines that an abnormality has occurred in the device under test, an alarm unit for notifying that the electromagnetic interference generation unit stops the process of applying the electromagnetic interference wave to the device under test The conduction immunity test apparatus according to claim 1, wherein:

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109212358A (en) * 2018-10-17 2019-01-15 中国电力科学研究院有限公司 The method that imitating substation ground potential rises the electromagnetic interference generated
CN110618295A (en) * 2019-08-15 2019-12-27 广东省医疗器械质量监督检验所 Conduction immunity test platform
CN114895137A (en) * 2022-06-29 2022-08-12 广东电网有限责任公司佛山供电局 Power supply quality testing method for power supply equipment
CN117406008A (en) * 2023-12-15 2024-01-16 深圳沃特检验集团有限公司 Radio frequency conduction immunity test method, device, equipment and storage medium

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109212358A (en) * 2018-10-17 2019-01-15 中国电力科学研究院有限公司 The method that imitating substation ground potential rises the electromagnetic interference generated
CN109212358B (en) * 2018-10-17 2023-06-02 中国电力科学研究院有限公司 Method for simulating electromagnetic interference generated by ground potential rise of transformer substation
CN110618295A (en) * 2019-08-15 2019-12-27 广东省医疗器械质量监督检验所 Conduction immunity test platform
CN114895137A (en) * 2022-06-29 2022-08-12 广东电网有限责任公司佛山供电局 Power supply quality testing method for power supply equipment
CN114895137B (en) * 2022-06-29 2023-04-07 广东电网有限责任公司佛山供电局 Power supply quality testing method for power supply equipment
CN117406008A (en) * 2023-12-15 2024-01-16 深圳沃特检验集团有限公司 Radio frequency conduction immunity test method, device, equipment and storage medium
CN117406008B (en) * 2023-12-15 2024-04-12 深圳沃特检验集团股份有限公司 Radio frequency conduction immunity test method, device, equipment and storage medium

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