JP2005167209A - デバイスの溶融密封方法及びシステム - Google Patents
デバイスの溶融密封方法及びシステム Download PDFInfo
- Publication number
- JP2005167209A JP2005167209A JP2004310022A JP2004310022A JP2005167209A JP 2005167209 A JP2005167209 A JP 2005167209A JP 2004310022 A JP2004310022 A JP 2004310022A JP 2004310022 A JP2004310022 A JP 2004310022A JP 2005167209 A JP2005167209 A JP 2005167209A
- Authority
- JP
- Japan
- Prior art keywords
- recessed
- areas
- area
- chips
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 69
- 238000007789 sealing Methods 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 230000008569 process Effects 0.000 claims abstract description 12
- 230000008018 melting Effects 0.000 claims abstract 2
- 238000002844 melting Methods 0.000 claims abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 230000003287 optical effect Effects 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 230000003667 anti-reflective effect Effects 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 239000003566 sealing material Substances 0.000 claims description 8
- 239000000155 melt Substances 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 238000003491 array Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 5
- 230000003746 surface roughness Effects 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 230000005496 eutectics Effects 0.000 claims description 3
- 230000004927 fusion Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims 6
- 239000012790 adhesive layer Substances 0.000 claims 2
- 239000006117 anti-reflective coating Substances 0.000 claims 2
- 238000005266 casting Methods 0.000 claims 2
- 230000000694 effects Effects 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 2
- 230000002093 peripheral effect Effects 0.000 claims 2
- 238000003466 welding Methods 0.000 claims 2
- 238000001039 wet etching Methods 0.000 claims 2
- 230000008878 coupling Effects 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 8
- 238000005859 coupling reaction Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 4
- 238000003754 machining Methods 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 239000008393 encapsulating agent Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000004630 atomic force microscopy Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000001429 visible spectrum Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000156 glass melt Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
- H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01021—Scandium [Sc]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1089—Methods of surface bonding and/or assembly therefor of discrete laminae to single face of additional lamina
- Y10T156/1092—All laminae planar and face to face
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1089—Methods of surface bonding and/or assembly therefor of discrete laminae to single face of additional lamina
- Y10T156/1092—All laminae planar and face to face
- Y10T156/1093—All laminae planar and face to face with covering of discrete laminae with additional lamina
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Micromachines (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
【解決手段】複数の独立したチップ315を有する基板を用意することを含む。チップ315のそれぞれは、複数のデバイスを含み、第1の配列として空間的に配置される。また、この方法は、第2の配列として空間的に配置された複数の凹部領域339を含む予め定められた厚さの透明要素320と支持領域340とを用意する。さらに、この方法は、透明要素320を、複数の凹部領域339のそれぞれを複数のチップ315の対応する1つに結合するように配置することを含む。この方法は、一つの凹部領域339内のチップ315のそれぞれを画定するための結合処理により、対応する一つの凹部領域339内のチップのそれぞれを溶融密封することをさらに含む。
【選択図】図3
Description
315 チップ
320 透明要素
339 凹部領域
340 支持領域
342 支持領域
344 ストリート領域
346 ストリート領域
354 透明カバー
510 支持領域
512 ストリート領域
515 支持領域
517 ストリート領域
552 透明要素
554 透明要素
556 透明要素
558 透明要素
560 チップ
610 チップ
630 結合パッド
710 相互結合領域
725 リードフレーム構造
730 封止材
Claims (60)
- 複数の独立したチップを有する基板を用意し、該チップのそれぞれは、複数のデバイスを含み、第1の配列として空間的に配置され、該配列の構成は離間して配置された複数の第1のストリート領域と離間して配置された複数の第2のストリート領域とを含み、該第2のストリート領域は、前記第1のストリート領域と交差して配列構造を形成し、
予め定められた厚さを有し、当該予め定められた厚さの中に複数の凹部領域を含み、第2の配列として空間的に配置された透明要素を用意し、前記凹部領域のそれぞれは、支持領域により画定され、該支持領域は前記予め定められた厚さの一部により規定される厚さを有し、
前記透明要素を前記複数のチップのそれぞれに対応する前記複数の凹部領域のそれぞれと結合するように配置し、前記支持領域は、対応する一つの前記凹部領域内の前記チップのそれぞれを囲むように、前記複数の第1のストリート領域のそれぞれに結合されかつ前記複数の第2のストリート領域のそれぞれに結合され、
少なくとも前記一つの凹部領域内のチップのそれぞれを画定するための結合処理によって、前記透明要素の前記支持領域を前記複数の第1のストリート領域と前記複数の第2のストリート領域とに接触させることにより、前記対応する一つの凹部領域内の前記チップのそれぞれを溶融密封する、
デバイスの溶融密封方法。 - 前記第1のストリート領域のそれぞれは、約0.5mmから約1.0mmの大きさの範囲の第1の幅を有し、前記第2のストリート領域のそれぞれは、約0.5mmから約1.0mmの大きさの範囲の第2の幅を有する、請求項1に記載の方法。
- 前記透明要素は、約99%より大きい光学出力透過率を有する、請求項1に記載の方法。
- 前記透明要素は、熱膨張係数αTを有し、該熱膨張係数は、基板の熱膨張係数αSとほぼ同一である、請求項1に記載の方法。
- 前記透明要素は、前記凹部領域のそれぞれの表面領域と重なるように配置された反射防止コーティングを有する、請求項1に記載の方法。
- 前記凹部領域のそれぞれは、ドライまたはウェットエッチング、レーザ加工、音響加工、及び注型加工から選択された処理により形成された、請求項1に記載の方法。
- 前記透明要素は、支持層に重なる第1の透明部材を有し、前記支持層は前記支持領域を含む、請求項1に記載の方法。
- 前記支持層は第2の透明部材を有する、請求項1に記載の方法。
- 前記結合処理は、少なくともプラズマ励起結合、共融結合、接着剤層または接着結合、溶接、陽極結合及び溶融結合から選択される、請求項1に記載の方法。
- 前記透明要素は、約0.1mmから約1.2mmの範囲の厚さを有する、請求項1に記載の方法。
- 前記チップのそれぞれは、前記対応する一つの凹部領域内の不活性雰囲気中に保持される、請求項1に記載の方法。
- 前記不活性雰囲気は、窒素、アルゴン、または窒素及びアルゴンの混合物から選択される、請求項11に記載の方法。
- 前記不活性雰囲気は減衰作用を有する、請求項12に記載の方法。
- 前記不活性雰囲気は電気的切断を軽減する、請求項12に記載の方法。
- 前記チップのそれぞれは、相互結合領域を有し、該相互結合領域は前記凹部領域の外側に配置される、請求項1に記載の方法。
- 前記相互結合領域は、貫通孔を介して前記透明要素上に露出される、請求項15に記載の方法。
- 前記相互結合領域は、複数の結合パッドを有する、請求項16に記載の方法。
- 前記基板は含シリコン材料である、請求項1に記載の方法。
- 前記基板はシリコンウェハである、請求項18に記載の方法。
- 前記凹部領域のそれぞれは、第2の表面領域に結合された第1の表面領域を有し、前記第1の表面領域と前記第2の表面領域とは光学品質を有する、請求項1に記載の方法。
- 前記第1の表面領域は、2μm×2μmの面積について、20nm以下の二乗平均表面粗度を有する、請求項20に記載の方法。
- 前記凹部領域のそれぞれは、環状の形状を有する、請求項1に記載の方法。
- 前記凹部領域のそれぞれは、約0.5mmまたはこれより小さい深さを有する、請求項1に記載の方法。
- 前記透明要素は、第1の側面と第2の側面とを有し、前記第1の側面は前記第2の側面と平行であり、前記第1の側面と前記第2の側面とは反射防止材料でコーティングされている、請求項1に記載の方法。
- 反射防止材料からなる前記コーティングは、前記第1の側面と前記第2の側面とにおいて、可視光の反射率を側面あたり2%より小さいように減少させる、請求項24に記載の方法。
- 前記反射防止材料はMgF2から構成される、請求項24に記載の方法。
- 前記第1のストリート領域のそれぞれの一部を画線しかつ前記第2のストリート領域のそれぞれの一部を画線することにより、前記チップの少なくとも1つを切断し、
前記一つの対応する凹部領域内の前記チップの少なくとも1つをリードフレーム構造に装着し、
前記装着されたチップの一部を前記リードフレーム構造の一部に配線結合し、
前記装着されたチップの配線結合された部分と前記リードフレーム構造の一部とを封止するとともに、封止材のない前記凹部領域上に規定される前記透明基板の表面領域を保持する、ことをさらに備える、請求項1に記載の方法。 - 前記凹部領域のそれぞれは光を排除する外周領域を有する、請求項1に記載の方法。
- 前記凹部領域のそれぞれは、前記対応する一つの凹部領域に重なる開口領域を形成する、請求項1に記載の方法。
- 前記複数のデバイスの少なくとも1つは、複数の電荷結合デバイス、複数の変形デバイス、複数の感知デバイス及びICデバイスを有する、請求項1に記載の方法。
- それぞれが複数のデバイスを有する複数の独立したチップを含むように構成された基板と、前記チップのそれぞれは、第1の配列として空間的に配置され、該配列の構成は離間して配置された複数の第1のストリート領域と離間して配置された複数の第2のストリート領域とを含み、該第2のストリート領域は、前記第1のストリート領域と交差して配列構造を形成し、
予め定められた厚さを有し、当該予め定められた厚さの中に複数の凹部領域を含み、第2の配列として空間的に配置された透明要素と、前記凹部領域のそれぞれは、支持領域により画定され、該支持領域は前記予め定められた厚さの一部により規定される厚さを有し、
とを備え、
前記基板と前記透明要素とは前記複数の凹部領域のそれぞれを前記複数のチップの対応する1つと結合するように配置され、前記支持領域は、対応する一つの前記凹部領域の中に前記チップのそれぞれを配置するように、前記複数の第1のストリート領域のそれぞれに結合されかつ前記複数の第2のストリート領域のそれぞれに結合され、
少なくとも前記一つの凹部領域内のチップのそれぞれを画定するための結合処理によって、前記透明要素の前記支持領域を前記複数の第1及び第2のストリート領域に接触させることにより、前記対応する一つの凹部領域内の前記チップのそれぞれが溶融密封される、デバイスの溶融密封システム。 - 前記第1のストリート領域のそれぞれは、約0.5mmから約1.0mmの大きさの範囲の第1の幅を有し、前記第2のストリート領域のそれぞれは、約0.5mmから約1.0mmの大きさの範囲の第2の幅を有する、請求項31に記載のシステム。
- 前記透明要素は、約99%より大きい光学出力透過率を有する、請求項31に記載のシステム。
- 前記透明要素は、熱膨張係数αTを有し、該熱膨張係数は、基板の熱膨張係数αSとほぼ同一である、請求項31に記載のシステム。
- 前記透明要素は、前記凹部領域のそれぞれの表面領域と重なるように配置された反射防止コーティングを有する、請求項31に記載のシステム。
- 前記凹部領域のそれぞれは、ドライまたはウェットエッチング、レーザ加工、音響加工、及び注型加工から選択された処理により形成された、請求項31に記載のシステム。
- 前記透明要素は、支持層に重なる第1の透明部材を有し、前記支持層は前記支持領域を含む、請求項31に記載のシステム。
- 前記支持層は第2の透明部材を有する、請求項31に記載のシステム。
- 前記結合処理は、少なくともプラズマ励起結合、共融結合、接着剤層または接着結合、溶接、陽極結合及び溶融結合から選択される、請求項31に記載のシステム。
- 前記透明要素は、約0.1mmから約1.2mmの範囲の厚さを有する、請求項31に記載のシステム。
- 前記チップのそれぞれは、前記対応する一つの凹部領域内の不活性雰囲気中に保持される、請求項31に記載のシステム。
- 前記不活性雰囲気は、窒素、アルゴン、または窒素及びアルゴンの混合物から選択される、請求項41に記載のシステム。
- 前記不活性雰囲気は減衰作用を有する、請求項42に記載のシステム。
- 前記不活性雰囲気は電気的切断を軽減する、請求項42に記載のシステム。
- 前記チップのそれぞれは、相互結合領域を有し、該相互結合領域は前記凹部領域の外側に配置される、請求項31に記載のシステム。
- 前記相互結合領域は、貫通孔を介して前記透明要素上に露出される、請求項45に記載のシステム。
- 前記相互結合領域は、複数の結合パッドを有する、請求項46に記載のシステム。
- 前記基板は含シリコン材料である、請求項31に記載のシステム。
- 前記基板はシリコンウェハである、請求項48に記載のシステム。
- 前記凹部領域のそれぞれは、第2の表面領域に結合された第1の表面領域を有し、前記第1の表面領域と前記第2の表面領域とは光学品質を有する、請求項31に記載のシステム。
- 前記第1の表面領域は、2μm×2μmの面積について、20nm以下の二乗平均表面粗度を有する、請求項50に記載のシステム。
- 前記凹部領域のそれぞれは、環状の形状を有する、請求項31に記載のシステム。
- 前記凹部領域のそれぞれは、約0.5mmまたはこれより小さい深さを有する、請求項31に記載のシステム。
- 前記透明要素は、第1の側面と第2の側面とを有し、前記第1の側面は前記第2の側面と平行であり、前記第1の側面と前記第2の側面とは反射防止材料でコーティングされている、請求項31に記載のシステム。
- 反射防止材料からなる前記コーティングは、前記第1の側面と前記第2の側面とにおいて、可視光の反射率を側面あたり2%より小さいように減少させる、請求項54に記載のシステム。
- 前記反射防止材料はMgF2から構成される、請求項54に記載のシステム。
- リードフレーム構造をさらに備え、
前記第1のストリート領域のそれぞれの一部を画線しかつ前記第2のストリート領域のそれぞれの一部を画線することにより、前記チップの少なくとも1つが切断され、
前記一つの対応する凹部領域内の前記チップの少なくとも1つがリードフレーム構造に装着され、
前記装着されたチップの一部が前記リードフレーム構造の一部に配線結合され、
前記装着されたチップの配線結合された部分と前記リードフレーム構造の一部とが封止されるとともに、封止材のない前記凹部領域上に規定される前記透明基板の表面領域が保持される、請求項31に記載のシステム。 - 前記凹部領域のそれぞれは光を排除する外周領域を有する、請求項31に記載のシステム。
- 前記凹部領域のそれぞれは、前記対応する一つの凹部領域に重なる開口領域を形成する、請求項31に記載のシステム。
- 前記複数のデバイスの少なくとも1つは、複数の電荷結合デバイス、複数の変形デバイス、複数の感知デバイス及びICデバイスを有する、請求項31に記載のシステム。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/693,323 | 2003-10-24 | ||
US10/693,323 US7303645B2 (en) | 2003-10-24 | 2003-10-24 | Method and system for hermetically sealing packages for optics |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005167209A true JP2005167209A (ja) | 2005-06-23 |
JP5043297B2 JP5043297B2 (ja) | 2012-10-10 |
Family
ID=33491000
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004310022A Expired - Fee Related JP5043297B2 (ja) | 2003-10-24 | 2004-10-25 | デバイスの溶融密封方法及びシステム |
Country Status (7)
Country | Link |
---|---|
US (7) | US7303645B2 (ja) |
JP (1) | JP5043297B2 (ja) |
KR (1) | KR20050039635A (ja) |
CN (4) | CN100454535C (ja) |
DE (1) | DE102004051361A1 (ja) |
GB (1) | GB2408145B (ja) |
TW (1) | TWI253182B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008082873A (ja) * | 2006-09-27 | 2008-04-10 | Fujitsu Ltd | 測定装置および測定方法 |
JP2009512202A (ja) * | 2005-10-14 | 2009-03-19 | エスティーマイクロエレクトロニクス エス.アール.エル. | 集積デバイス用の基板レベル・アセンブリ、その製造プロセス、および関連する集積デバイス |
Families Citing this family (100)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6969635B2 (en) * | 2000-12-07 | 2005-11-29 | Reflectivity, Inc. | Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates |
TWI289708B (en) | 2002-12-25 | 2007-11-11 | Qualcomm Mems Technologies Inc | Optical interference type color display |
US7483198B2 (en) * | 2003-02-12 | 2009-01-27 | Texas Instruments Incorporated | Micromirror device and method for making the same |
US8619352B2 (en) * | 2003-07-29 | 2013-12-31 | Silicon Quest Kabushiki-Kaisha | Projection display system using laser light source |
US7303645B2 (en) * | 2003-10-24 | 2007-12-04 | Miradia Inc. | Method and system for hermetically sealing packages for optics |
US8194305B2 (en) * | 2003-11-01 | 2012-06-05 | Silicon Quest Kabushiki-Kaisha | Package for micromirror device |
US7645681B2 (en) * | 2003-12-02 | 2010-01-12 | Bondtech, Inc. | Bonding method, device produced by this method, and bonding device |
US7342705B2 (en) | 2004-02-03 | 2008-03-11 | Idc, Llc | Spatial light modulator with integrated optical compensation structure |
US7329555B1 (en) * | 2004-07-20 | 2008-02-12 | National Semiconductor Corporation | Method of selectively forming MEMS-based semiconductor devices at the end of a common fabrication process |
US7508571B2 (en) * | 2004-09-27 | 2009-03-24 | Idc, Llc | Optical films for controlling angular characteristics of displays |
US7807488B2 (en) | 2004-09-27 | 2010-10-05 | Qualcomm Mems Technologies, Inc. | Display element having filter material diffused in a substrate of the display element |
US7408250B2 (en) * | 2005-04-05 | 2008-08-05 | Texas Instruments Incorporated | Micromirror array device with compliant adhesive |
US7349140B2 (en) * | 2005-05-31 | 2008-03-25 | Miradia Inc. | Triple alignment substrate method and structure for packaging devices |
US20070052035A1 (en) * | 2005-08-23 | 2007-03-08 | Omnivision Technologies, Inc. | Method and apparatus for reducing optical crosstalk in CMOS image sensors |
US7471439B2 (en) * | 2005-11-23 | 2008-12-30 | Miradia, Inc. | Process of forming a micromechanical system containing an anti-stiction gas-phase lubricant |
US7425166B2 (en) * | 2005-12-06 | 2008-09-16 | Corning Incorporated | Method of sealing glass substrates |
US20070170528A1 (en) | 2006-01-20 | 2007-07-26 | Aaron Partridge | Wafer encapsulated microelectromechanical structure and method of manufacturing same |
KR100747611B1 (ko) * | 2006-03-08 | 2007-08-08 | 삼성전자주식회사 | 미소소자 패키지 및 그 제조방법 |
WO2007147137A2 (en) | 2006-06-15 | 2007-12-21 | Sitime Corporation | Stacked die package for mems resonator system |
JP5270349B2 (ja) * | 2006-08-25 | 2013-08-21 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置及びその製造方法 |
WO2008023827A1 (fr) * | 2006-08-25 | 2008-02-28 | Sanyo Electric Co., Ltd. | Dispositif semi-conducteur |
US20080055729A1 (en) * | 2006-08-28 | 2008-03-06 | Micron Technology, Inc. | Reducing reflections in image sensors |
US7763489B2 (en) * | 2006-09-27 | 2010-07-27 | Miradia, Inc. | Method of forming a micromechanical system containing a microfluidic lubricant channel |
US7932569B2 (en) * | 2006-09-27 | 2011-04-26 | Miradia, Inc. | Micromechanical device with microfluidic lubricant channel |
US7709292B2 (en) * | 2006-09-29 | 2010-05-04 | Sadwick Laurence P | Processes and packaging for high voltage integrated circuits, electronic devices, and circuits |
US7430359B2 (en) * | 2006-10-02 | 2008-09-30 | Miradia, Inc. | Micromechanical system containing a microfluidic lubricant channel |
EP2366942A1 (en) | 2006-10-06 | 2011-09-21 | Qualcomm Mems Technologies, Inc. | Optical loss layer integrated in an illumination apparatus of a display |
WO2008045207A2 (en) | 2006-10-06 | 2008-04-17 | Qualcomm Mems Technologies, Inc. | Light guide |
US8096665B2 (en) * | 2006-10-11 | 2012-01-17 | Miradia, Inc. | Spatially offset multi-imager-panel architecture for projecting an image |
KR100840790B1 (ko) * | 2006-11-29 | 2008-06-23 | 삼성전자주식회사 | 반도체 모듈 및 그의 제조 방법 |
US7491581B2 (en) * | 2006-12-22 | 2009-02-17 | Honeywell International Inc. | Dicing technique for flip-chip USP wafers |
TW200834830A (en) * | 2007-02-06 | 2008-08-16 | Advanced Semiconductor Eng | Microelectromechanical system package and the method for manufacturing the same |
JP2009010261A (ja) * | 2007-06-29 | 2009-01-15 | Fujikura Ltd | 半導体パッケージおよびその製造方法 |
GB2454813B (en) * | 2007-11-21 | 2010-06-09 | Intel Corp | High-volume on-wafer heterogeneous packaging of optical interconnects |
US8068710B2 (en) | 2007-12-07 | 2011-11-29 | Qualcomm Mems Technologies, Inc. | Decoupled holographic film and diffuser |
US7948672B2 (en) * | 2008-03-07 | 2011-05-24 | Qualcomm Mems Technologies, Inc. | System and methods for tiling display panels |
WO2010098771A1 (en) * | 2009-02-27 | 2010-09-02 | Hewlett-Packard Development Company, L.P. | Micro device packaging |
US8928602B1 (en) | 2009-03-03 | 2015-01-06 | MCube Inc. | Methods and apparatus for object tracking on a hand-held device |
US8486723B1 (en) | 2010-08-19 | 2013-07-16 | MCube Inc. | Three axis magnetic sensor device and method |
US8797279B2 (en) | 2010-05-25 | 2014-08-05 | MCube Inc. | Analog touchscreen methods and apparatus |
US8215018B2 (en) * | 2009-04-08 | 2012-07-10 | Canon Kabushiki Kaisha | Method for manufacturing liquid discharge head |
EP2252077B1 (en) | 2009-05-11 | 2012-07-11 | STMicroelectronics Srl | Assembly of a capacitive acoustic transducer of the microelectromechanical type and package thereof |
US8823007B2 (en) | 2009-10-28 | 2014-09-02 | MCube Inc. | Integrated system on chip using multiple MEMS and CMOS devices |
US8553389B1 (en) | 2010-08-19 | 2013-10-08 | MCube Inc. | Anchor design and method for MEMS transducer apparatuses |
US8395252B1 (en) | 2009-11-13 | 2013-03-12 | MCube Inc. | Integrated MEMS and CMOS package and method |
US8476129B1 (en) | 2010-05-24 | 2013-07-02 | MCube Inc. | Method and structure of sensors and MEMS devices using vertical mounting with interconnections |
US8421082B1 (en) | 2010-01-19 | 2013-04-16 | Mcube, Inc. | Integrated CMOS and MEMS with air dielectric method and system |
US8710597B1 (en) | 2010-04-21 | 2014-04-29 | MCube Inc. | Method and structure for adding mass with stress isolation to MEMS structures |
US8477473B1 (en) | 2010-08-19 | 2013-07-02 | MCube Inc. | Transducer structure and method for MEMS devices |
US8421175B2 (en) * | 2009-09-10 | 2013-04-16 | STMicroelectronics ( Research & Development) Limited | Wafer level packaged integrated circuit |
US9709509B1 (en) | 2009-11-13 | 2017-07-18 | MCube Inc. | System configured for integrated communication, MEMS, Processor, and applications using a foundry compatible semiconductor process |
US8402666B1 (en) | 2009-11-30 | 2013-03-26 | Mcube, Inc. | Magneto meter using lorentz force for integrated systems |
US10303035B2 (en) | 2009-12-22 | 2019-05-28 | View, Inc. | Self-contained EC IGU |
US11314139B2 (en) | 2009-12-22 | 2022-04-26 | View, Inc. | Self-contained EC IGU |
US8637943B1 (en) | 2010-01-04 | 2014-01-28 | MCube Inc. | Multi-axis integrated MEMS devices with CMOS circuits and method therefor |
US8407905B1 (en) | 2010-01-15 | 2013-04-02 | Mcube, Inc. | Multiple magneto meters using Lorentz force for integrated systems |
US8236577B1 (en) | 2010-01-15 | 2012-08-07 | MCube Inc. | Foundry compatible process for manufacturing a magneto meter using lorentz force for integrated systems |
US8584521B1 (en) | 2010-01-19 | 2013-11-19 | MCube Inc. | Accurate gyroscope device using MEMS and quartz |
US8794065B1 (en) | 2010-02-27 | 2014-08-05 | MCube Inc. | Integrated inertial sensing apparatus using MEMS and quartz configured on crystallographic planes |
US8936959B1 (en) | 2010-02-27 | 2015-01-20 | MCube Inc. | Integrated rf MEMS, control systems and methods |
US8551814B2 (en) * | 2010-03-11 | 2013-10-08 | Freescale Semiconductor, Inc. | Method of fabricating a semiconductor device that limits damage to elements of the semiconductor device that are exposed during processing |
US8367522B1 (en) | 2010-04-08 | 2013-02-05 | MCube Inc. | Method and structure of integrated micro electro-mechanical systems and electronic devices using edge bond pads |
US8564075B1 (en) | 2010-04-21 | 2013-10-22 | MCube Inc. | Package tolerate design and method |
US8848294B2 (en) | 2010-05-20 | 2014-09-30 | Qualcomm Mems Technologies, Inc. | Method and structure capable of changing color saturation |
US8476084B1 (en) | 2010-05-24 | 2013-07-02 | MCube Inc. | Method and structure of sensors or electronic devices using vertical mounting |
US8928696B1 (en) | 2010-05-25 | 2015-01-06 | MCube Inc. | Methods and apparatus for operating hysteresis on a hand held device |
US8869616B1 (en) | 2010-06-18 | 2014-10-28 | MCube Inc. | Method and structure of an inertial sensor using tilt conversion |
US8652961B1 (en) | 2010-06-18 | 2014-02-18 | MCube Inc. | Methods and structure for adapting MEMS structures to form electrical interconnections for integrated circuits |
US8993362B1 (en) | 2010-07-23 | 2015-03-31 | MCube Inc. | Oxide retainer method for MEMS devices |
US8723986B1 (en) | 2010-11-04 | 2014-05-13 | MCube Inc. | Methods and apparatus for initiating image capture on a hand-held device |
US9958750B2 (en) | 2010-11-08 | 2018-05-01 | View, Inc. | Electrochromic window fabrication methods |
US9540232B2 (en) | 2010-11-12 | 2017-01-10 | MCube Inc. | Method and structure of MEMS WLCSP fabrication |
CN107340664B (zh) | 2010-12-08 | 2021-01-22 | 唯景公司 | 绝缘玻璃装置的改良隔板 |
US9442339B2 (en) | 2010-12-08 | 2016-09-13 | View, Inc. | Spacers and connectors for insulated glass units |
DE102011003195B4 (de) | 2011-01-26 | 2019-01-10 | Robert Bosch Gmbh | Bauteil und Verfahren zum Herstellen eines Bauteils |
CN102158787B (zh) * | 2011-03-15 | 2015-01-28 | 迈尔森电子(天津)有限公司 | Mems麦克风与压力集成传感器及其制作方法 |
TW201250947A (en) * | 2011-05-12 | 2012-12-16 | Siliconware Precision Industries Co Ltd | Package structure having a micromechanical electronic component and method of making same |
US8969101B1 (en) | 2011-08-17 | 2015-03-03 | MCube Inc. | Three axis magnetic sensor device and method using flex cables |
CN103837943B (zh) * | 2012-11-22 | 2017-08-15 | 赛恩倍吉科技顾问(深圳)有限公司 | 光通讯模组 |
CN103968886A (zh) * | 2013-02-04 | 2014-08-06 | 刘胜 | 一种多自由度微传感器模块及其封装 |
JP2014187354A (ja) * | 2013-02-21 | 2014-10-02 | Ricoh Co Ltd | デバイス、及びデバイスの作製方法 |
US10913653B2 (en) | 2013-03-07 | 2021-02-09 | MCube Inc. | Method of fabricating MEMS devices using plasma etching and device therefor |
CN104045052B (zh) * | 2013-03-14 | 2016-11-16 | 台湾积体电路制造股份有限公司 | Mems集成压力传感器和麦克风器件及其形成方法 |
CN105164018B (zh) * | 2013-05-02 | 2019-01-22 | 普拉克生化公司 | 存放和/或运输交酯颗粒的方法 |
CN103466921A (zh) * | 2013-08-28 | 2013-12-25 | 深圳市华星光电技术有限公司 | 一种玻璃基板的封装方法 |
JP2015115522A (ja) * | 2013-12-13 | 2015-06-22 | ソニー株式会社 | 固体撮像装置および製造方法、並びに電子機器 |
CN104154995B (zh) * | 2014-08-21 | 2016-09-28 | 中国科学院光电研究院 | 一种高光谱探测集成模块及其制造方法 |
CN104296872B (zh) * | 2014-11-17 | 2016-07-06 | 中国科学院光电研究院 | 一种滤光片和探测器的配合装置 |
US20160140685A1 (en) * | 2014-11-17 | 2016-05-19 | Pixtronix, Inc. | Display including sensors |
WO2016100075A1 (en) | 2014-12-15 | 2016-06-23 | View, Inc. | Seals for electrochromic windows |
CN104796832B (zh) * | 2015-02-16 | 2018-10-16 | 迈尔森电子(天津)有限公司 | Mems麦克风及其形成方法 |
JP6720633B2 (ja) * | 2016-03-29 | 2020-07-08 | セイコーエプソン株式会社 | 電気光学装置、電気光学ユニットおよび電子機器 |
US10192850B1 (en) | 2016-09-19 | 2019-01-29 | Sitime Corporation | Bonding process with inhibited oxide formation |
IT201700103489A1 (it) | 2017-09-15 | 2019-03-15 | St Microelectronics Srl | Metodo di fabbricazione di una membrana filtrante sottile, dispositivo trasduttore acustico includente la membrana filtrante, metodo di assemblaggio del dispositivo trasduttore acustico e sistema elettronico |
DE102017223372A1 (de) * | 2017-12-20 | 2019-06-27 | Robert Bosch Gmbh | Laserbondverfahren und mikromechanische Vorrichtung mit Laserbondverbindung |
US11685649B2 (en) * | 2018-03-20 | 2023-06-27 | Obsidian Sensors, Inc. | Capping plate for panel scale packaging of MEMS products |
DE102018207201A1 (de) * | 2018-05-09 | 2019-11-14 | Robert Bosch Gmbh | Herstellungsverfahren für eine mikromechanische Vorrichtung mit geneigten optischen Fenstern und entsprechende mikromechanische Vorrichtung |
US11037970B2 (en) * | 2018-11-01 | 2021-06-15 | Semiconductor Components Industries, Llc | Semiconductor package structure and related methods |
CN110697648B (zh) * | 2019-10-16 | 2022-03-04 | 中电国基南方集团有限公司 | 一种mems层叠器件微波端口实现的工艺方法 |
CN111276451A (zh) * | 2020-03-26 | 2020-06-12 | 苏州晶方半导体科技股份有限公司 | 芯片的封装结构、封装组件以及封装方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05291388A (ja) * | 1991-12-16 | 1993-11-05 | Motorola Inc | 半導体ウエハ・レベル・パッケージ |
JPH0951247A (ja) * | 1995-08-03 | 1997-02-18 | Kokusai Electric Co Ltd | 弾性表面波装置及びその製造方法 |
JPH1098121A (ja) * | 1996-08-29 | 1998-04-14 | Harris Corp | 集積回路及びパッケージング方法 |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3997964A (en) * | 1974-09-30 | 1976-12-21 | General Electric Company | Premature breakage resistant semiconductor wafer and method for the manufacture thereof |
JP3116097B2 (ja) * | 1993-06-17 | 2000-12-11 | 富士写真フイルム株式会社 | ハロゲン化銀写真感光材料 |
US6952301B2 (en) * | 1995-06-19 | 2005-10-04 | Reflectivity, Inc | Spatial light modulators with light blocking and absorbing areas |
US6969635B2 (en) | 2000-12-07 | 2005-11-29 | Reflectivity, Inc. | Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates |
US5682065A (en) * | 1996-03-12 | 1997-10-28 | Micron Technology, Inc. | Hermetic chip and method of manufacture |
US6294439B1 (en) * | 1997-07-23 | 2001-09-25 | Kabushiki Kaisha Toshiba | Method of dividing a wafer and method of manufacturing a semiconductor device |
DE19840421C2 (de) | 1998-06-22 | 2000-05-31 | Fraunhofer Ges Forschung | Verfahren zur Fertigung von dünnen Substratschichten und eine dafür geeignete Substratanordnung |
US6303986B1 (en) * | 1998-07-29 | 2001-10-16 | Silicon Light Machines | Method of and apparatus for sealing an hermetic lid to a semiconductor die |
US6093623A (en) * | 1998-08-04 | 2000-07-25 | Micron Technology, Inc. | Methods for making silicon-on-insulator structures |
US6566745B1 (en) * | 1999-03-29 | 2003-05-20 | Imec Vzw | Image sensor ball grid array package and the fabrication thereof |
US6664503B1 (en) * | 1999-09-07 | 2003-12-16 | Asahi Glass Company, Ltd. | Method for manufacturing a magnetic disk |
JP2001094005A (ja) * | 1999-09-22 | 2001-04-06 | Oki Electric Ind Co Ltd | 半導体装置及び半導体装置の製造方法 |
AU1183101A (en) * | 1999-10-19 | 2001-04-30 | Imego Ab | Method relating to anodic bonding |
US6514789B2 (en) | 1999-10-26 | 2003-02-04 | Motorola, Inc. | Component and method for manufacture |
US6384473B1 (en) * | 2000-05-16 | 2002-05-07 | Sandia Corporation | Microelectronic device package with an integral window |
US6396711B1 (en) * | 2000-06-06 | 2002-05-28 | Agere Systems Guardian Corp. | Interconnecting micromechanical devices |
AU2002239662A1 (en) * | 2000-12-19 | 2002-07-01 | Coventor, Incorporated | Mems device having an actuator with curved electrodes |
DE60215579T2 (de) * | 2001-05-17 | 2007-05-10 | Furukawa-Sky Aluminum Corp. | Aluminiumlegierung geeignet für Bleche und ein Verfahren zu deren Herstellung |
KR100701013B1 (ko) * | 2001-05-21 | 2007-03-29 | 삼성전자주식회사 | 레이저 빔을 이용한 비금속 기판의 절단방법 및 장치 |
US6646778B2 (en) * | 2001-08-01 | 2003-11-11 | Silicon Light Machines | Grating light valve with encapsulated dampening gas |
JP2003077940A (ja) * | 2001-09-06 | 2003-03-14 | Sony Corp | 素子の転写方法及びこれを用いた素子の配列方法、画像表示装置の製造方法 |
US7049175B2 (en) | 2001-11-07 | 2006-05-23 | Board Of Trustees Of The University Of Arkansas | Method of packaging RF MEMS |
KR100442830B1 (ko) * | 2001-12-04 | 2004-08-02 | 삼성전자주식회사 | 저온의 산화방지 허메틱 실링 방법 |
US6639313B1 (en) * | 2002-03-20 | 2003-10-28 | Analog Devices, Inc. | Hermetic seals for large optical packages and the like |
US6962834B2 (en) | 2002-03-22 | 2005-11-08 | Stark David H | Wafer-level hermetic micro-device packages |
US20040016995A1 (en) * | 2002-07-25 | 2004-01-29 | Kuo Shun Meen | MEMS control chip integration |
US6822326B2 (en) * | 2002-09-25 | 2004-11-23 | Ziptronix | Wafer bonding hermetic encapsulation |
US7370185B2 (en) * | 2003-04-30 | 2008-05-06 | Hewlett-Packard Development Company, L.P. | Self-packaged optical interference display device having anti-stiction bumps, integral micro-lens, and reflection-absorbing layers |
US6949398B2 (en) * | 2002-10-31 | 2005-09-27 | Freescale Semiconductor, Inc. | Low cost fabrication and assembly of lid for semiconductor devices |
US6859014B2 (en) | 2002-12-17 | 2005-02-22 | Motorola, Inc. | Method for rapid charge control in lithium batteries |
US6879035B2 (en) * | 2003-05-02 | 2005-04-12 | Athanasios J. Syllaios | Vacuum package fabrication of integrated circuit components |
US7303645B2 (en) * | 2003-10-24 | 2007-12-04 | Miradia Inc. | Method and system for hermetically sealing packages for optics |
US6856014B1 (en) | 2003-12-29 | 2005-02-15 | Texas Instruments Incorporated | Method for fabricating a lid for a wafer level packaged optical MEMS device |
US7141870B2 (en) * | 2004-07-28 | 2006-11-28 | Miradia Inc. | Apparatus for micro-electro mechanical system package |
-
2003
- 2003-10-24 US US10/693,323 patent/US7303645B2/en active Active
-
2004
- 2004-10-21 DE DE102004051361A patent/DE102004051361A1/de not_active Ceased
- 2004-10-22 KR KR1020040084711A patent/KR20050039635A/ko not_active Application Discontinuation
- 2004-10-22 GB GB0423507A patent/GB2408145B/en not_active Expired - Fee Related
- 2004-10-25 CN CNB2004100863322A patent/CN100454535C/zh not_active Expired - Fee Related
- 2004-10-25 CN CN2007101703447A patent/CN101183675B/zh not_active Expired - Fee Related
- 2004-10-25 CN CN2007101703451A patent/CN101202272B/zh not_active Expired - Fee Related
- 2004-10-25 JP JP2004310022A patent/JP5043297B2/ja not_active Expired - Fee Related
- 2004-10-25 CN CN2007101703466A patent/CN101252122B/zh not_active Expired - Fee Related
- 2004-10-26 TW TW093132432A patent/TWI253182B/zh not_active IP Right Cessation
-
2006
- 2006-08-29 US US11/512,661 patent/US8022520B2/en not_active Expired - Fee Related
- 2006-11-16 US US11/560,784 patent/US7671461B2/en not_active Expired - Fee Related
-
2007
- 2007-02-07 US US11/672,114 patent/US7948000B2/en not_active Expired - Fee Related
- 2007-06-14 US US11/763,064 patent/US20070235852A1/en not_active Abandoned
- 2007-09-12 US US11/854,357 patent/US20080014682A1/en not_active Abandoned
-
2011
- 2011-04-13 US US13/086,352 patent/US8288851B2/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05291388A (ja) * | 1991-12-16 | 1993-11-05 | Motorola Inc | 半導体ウエハ・レベル・パッケージ |
JPH0951247A (ja) * | 1995-08-03 | 1997-02-18 | Kokusai Electric Co Ltd | 弾性表面波装置及びその製造方法 |
JPH1098121A (ja) * | 1996-08-29 | 1998-04-14 | Harris Corp | 集積回路及びパッケージング方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009512202A (ja) * | 2005-10-14 | 2009-03-19 | エスティーマイクロエレクトロニクス エス.アール.エル. | 集積デバイス用の基板レベル・アセンブリ、その製造プロセス、および関連する集積デバイス |
JP2008082873A (ja) * | 2006-09-27 | 2008-04-10 | Fujitsu Ltd | 測定装置および測定方法 |
Also Published As
Publication number | Publication date |
---|---|
US8022520B2 (en) | 2011-09-20 |
CN101252122A (zh) | 2008-08-27 |
JP5043297B2 (ja) | 2012-10-10 |
US20070235852A1 (en) | 2007-10-11 |
CN101202272A (zh) | 2008-06-18 |
CN101183675B (zh) | 2010-06-09 |
US7303645B2 (en) | 2007-12-04 |
KR20050039635A (ko) | 2005-04-29 |
CN101183675A (zh) | 2008-05-21 |
US20070072328A1 (en) | 2007-03-29 |
CN101202272B (zh) | 2010-06-02 |
US20060284295A1 (en) | 2006-12-21 |
CN100454535C (zh) | 2009-01-21 |
US20070128818A1 (en) | 2007-06-07 |
TW200525769A (en) | 2005-08-01 |
US7671461B2 (en) | 2010-03-02 |
TWI253182B (en) | 2006-04-11 |
US7948000B2 (en) | 2011-05-24 |
GB0423507D0 (en) | 2004-11-24 |
US20080014682A1 (en) | 2008-01-17 |
US20110186839A1 (en) | 2011-08-04 |
GB2408145A (en) | 2005-05-18 |
CN1638115A (zh) | 2005-07-13 |
GB2408145B (en) | 2007-06-06 |
DE102004051361A1 (de) | 2006-01-19 |
US20050101059A1 (en) | 2005-05-12 |
US8288851B2 (en) | 2012-10-16 |
CN101252122B (zh) | 2012-01-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5043297B2 (ja) | デバイスの溶融密封方法及びシステム | |
US7285478B2 (en) | Method for micro-electromechanical system package | |
KR100707179B1 (ko) | 광스캐너 패키지 및 그 제조방법 | |
US7485956B2 (en) | Microelectronic package optionally having differing cover and device thermal expansivities | |
US8550639B2 (en) | Cover device for a micro-optomechanical component, and manufacturing method for such a cover device | |
KR20090105933A (ko) | 모바일 어플리케이션에 사용되는 마이크로 메카니칼 및 마이크로 광학 부품용 하우징 | |
US20070029562A1 (en) | Semiconductor device and method of manufacturing a semiconductor device | |
JP2006247833A (ja) | Mems素子パッケージ及びその製造方法 | |
JP2011033393A (ja) | メンブレン部を有する半導体装置とその製造方法 | |
US7709940B2 (en) | Micro device encapsulation | |
US20200385264A1 (en) | Generating a mems device with glass cover and mems device | |
GB2443352A (en) | Hermetically sealed wafer level packaging for optical MEMS devices | |
WO2004068665A2 (en) | Wafer scale packaging technique for sealed optical elements and sealed packages produced thereby | |
GB2443573A (en) | Hermetically sealed optoelectronic MEMS wafer level package | |
GB2439403A (en) | Hermetically sealed wafer level packaging for optical MEMS devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070828 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20070828 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20071004 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100702 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100706 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20101006 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20101012 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101028 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110719 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111019 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120612 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120712 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150720 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |