JP2005133198A - HIGH-PURITY HIGH-DENSITY METAL Mo SINTERING TARGET FOR SPUTTERING WHICH ENABLES FORMATION OF HIGH-PURITY METAL Mo THIN FILM PRODUCING EXTREMELY FEW PARTICLE - Google Patents
HIGH-PURITY HIGH-DENSITY METAL Mo SINTERING TARGET FOR SPUTTERING WHICH ENABLES FORMATION OF HIGH-PURITY METAL Mo THIN FILM PRODUCING EXTREMELY FEW PARTICLE Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 59
- 239000002184 metal Substances 0.000 title claims abstract description 59
- 239000002245 particle Substances 0.000 title claims abstract description 38
- 239000010409 thin film Substances 0.000 title claims abstract description 22
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 15
- 238000005245 sintering Methods 0.000 title claims abstract description 7
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 6
- 239000000843 powder Substances 0.000 claims abstract description 56
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052700 potassium Inorganic materials 0.000 claims abstract description 9
- 239000011591 potassium Substances 0.000 claims abstract description 9
- 239000000654 additive Substances 0.000 claims abstract description 7
- 230000000996 additive effect Effects 0.000 claims abstract description 7
- 238000001159 Fisher's combined probability test Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 3
- 239000001257 hydrogen Substances 0.000 description 12
- 229910052739 hydrogen Inorganic materials 0.000 description 12
- 239000002994 raw material Substances 0.000 description 11
- 238000011282 treatment Methods 0.000 description 10
- 239000011362 coarse particle Substances 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical group O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 4
- APUPEJJSWDHEBO-UHFFFAOYSA-P ammonium molybdate Chemical compound [NH4+].[NH4+].[O-][Mo]([O-])(=O)=O APUPEJJSWDHEBO-UHFFFAOYSA-P 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 2
- 235000018660 ammonium molybdate Nutrition 0.000 description 2
- 239000011609 ammonium molybdate Substances 0.000 description 2
- 229940010552 ammonium molybdate Drugs 0.000 description 2
- 238000009694 cold isostatic pressing Methods 0.000 description 2
- QXYJCZRRLLQGCR-UHFFFAOYSA-N dioxomolybdenum Chemical compound O=[Mo]=O QXYJCZRRLLQGCR-UHFFFAOYSA-N 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
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- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Powder Metallurgy (AREA)
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Abstract
Description
この発明は、例えば液晶ディスプレイに代表されるフラットパネルディスプレイの透明導電膜や電解トランジスターのゲート電極や配線回路などに適応される高純度金属Ｍｏ薄膜のスパッタリング法による形成に用いられる、高純度金属Ｍｏ焼結ターゲットに関するものである。 The present invention is a high-purity metal Mo used for forming a high-purity metal Mo thin film suitable for, for example, a transparent conductive film of a flat panel display represented by a liquid crystal display, a gate electrode of an electrolysis transistor, a wiring circuit, and the like. It relates to a sintering target.
従来、一般に上記のスパッタリング用高純度金属Ｍｏ焼結ターゲットが、原料粉末として、純度：９９．９９質量％以上の高純度を有し、かつフィッシャー法による粒度測定で２〜４μｍの平均粒径（以下、平均粒径の表示はいずれもフィッシャー法により測定した結果を示す）、並びにＪＩＳ・Ｒ１６２６に基づくＢＥＴ値で０．５〜１ｍ２／ｇの比表面積（以下、比表面積はいずれもＪＩＳ・Ｒ１６２６に基づくＢＥＴ値で示す）を有する高純度金属Ｍｏ粉末を用い、これを焼結することにより製造されることは良く知られるところである。 Conventionally, the above-mentioned high-purity metal Mo sintered target for sputtering generally has a high purity of 99.99% by mass or more as a raw material powder, and an average particle diameter of 2 to 4 μm by a particle size measurement by the Fisher method ( In the following, the average particle size is indicated by the Fischer method, and the BET value based on JIS R1626 is 0.5-1 m 2 / g specific surface area (hereinafter, the specific surface area is JIS It is well known that it is produced by using a high-purity metal Mo powder having a BET value based on R1626 and sintering it.
また、上記の原料粉末としての高純度金属Ｍｏ粉末が、原料として９９．９質量％以上の純度および２〜４μｍの平均粒径を有する三酸化モリブデン粉末やモリブデン酸アンモニウム塩粉末など（以下、これらを総称してＭｏＯ３粉末で示す）を用い、これに水素気流中、５００〜７００℃の温度に所定時間保持の条件で一次水素還元処理を施して二酸化モリブデン（以下、ＭｏＯ２で示す）粉末を形成し、ついで前記ＭｏＯ２粉末を同じく水素気流中、７５０〜１１００℃の温度に所定時間保持の条件で二次水素還元処理を施して、９９．９９質量％以上の純度を有する高純度金属Ｍｏ粉末とすることにより製造されることも知られている。
近年、例えば液晶ディスプレイの高性能化および大型化、さらに薄型化はめざましく、これに対応して、これらの構造部品である透明導電膜や電解トランジスターのゲート電極や配線回路などは著しく高集積化するようになり、このように前記構造部品の集積度が高くなればなるほど、これの形成に適用される高純度金属Ｍｏ薄膜の品質にも高い均質性が要求され、特に膜中にできるだけパーティクル（最大径で０．５μｍ以上の粗大粒）が存在しない薄膜が強く要求されることになるが、上記の従来高純度金属Ｍｏ粉末を原料粉末として用いて製造された高純度金属Ｍｏ焼結ターゲットを用いて、スパッタリング法により高純度金属Ｍｏ薄膜を形成した場合、前記薄膜中のパーティクルを前記構造部品の高集積化に十分満足に対応できる程度に少なくすることができないのが現状である。 In recent years, for example, the performance and size of liquid crystal displays have been increasing and their thickness has been dramatically reduced. Correspondingly, the transparent conductive films, gate electrodes of electrolytic transistors, wiring circuits, and the like, which are these structural parts, have been remarkably highly integrated. Thus, the higher the degree of integration of the structural components, the higher the homogeneity required for the quality of the high-purity metal Mo thin film applied to the formation of the structural parts. A thin film that does not include a coarse particle having a diameter of 0.5 μm or more is strongly required, but a high-purity metal Mo sintered target manufactured using the above-described conventional high-purity metal Mo powder as a raw material powder is used. Thus, when a high-purity metal Mo thin film is formed by sputtering, the particles in the thin film are sufficiently satisfactory for high integration of the structural parts. At present it can not be reduced to that.
そこで、本発明者等は、上述のような観点から、パーティクル発生のきわめて少ない高純度金属Ｍｏ薄膜の形成が可能なスパッタリング用高純度金属Ｍｏ焼結ターゲットを開発すべく、特にこれの製造に原料粉末として用いられている高純度金属Ｍｏ粉末に着目し、研究を行った結果、
（ａ）スパッタ時のパーティクル発生数と焼結ターゲットの理論密度比との間には密接な関係があり、焼結ターゲットの理論密度比を９８％以上に高密度化するとパーティクルの発生を著しく減少させることができること。
In view of the above, the present inventors have developed a high-purity metal Mo sintered target for sputtering capable of forming a high-purity metal Mo thin film that generates very little particles, and in particular, a raw material for the production thereof. As a result of conducting research by focusing on the high-purity metal Mo powder used as a powder,
(A) There is a close relationship between the number of particles generated during sputtering and the theoretical density ratio of the sintered target. When the theoretical density ratio of the sintered target is increased to 98% or more, the generation of particles is remarkably reduced. What can be done.
（ｂ）焼結ターゲットの理論密度比と前記焼結ターゲットの製造に原料粉末として用いられる高純度金属Ｍｏ粉末の粒度および比表面積との間にも密接な関係があり、前記高純度金属Ｍｏ粉末の平均粒径および比表面積が、上記の通り従来高純度金属Ｍｏ粉末のもつ２〜４μｍの平均粒径および０．５〜１ｍ２／ｇの比表面積では９８％以上の理論密度比をもった焼結ターゲットを製造することはできないが、これを５．５μｍ以上の平均粒径および０．２ｍ２／ｇ以下の比表面積をもった粗粒にすると焼結ターゲットの理論密度比を９８％以上に高密度化することができること。 (B) There is also a close relationship between the theoretical density ratio of the sintered target and the particle size and specific surface area of the high-purity metal Mo powder used as a raw material powder in the production of the sintered target, and the high-purity metal Mo powder As described above, the average particle size and specific surface area of the high purity metal Mo powder had a theoretical density ratio of 98% or more with an average particle size of 2 to 4 μm and a specific surface area of 0.5 to 1 m 2 / g. Although a sintered target cannot be manufactured, if this is made into coarse particles having an average particle size of 5.5 μm or more and a specific surface area of 0.2 m 2 / g or less, the theoretical density ratio of the sintered target is 98% or more. The density can be increased.
（ｃ）上記の従来高純度金属Ｍｏ粉末の製造において、例えばモリブデン酸アンモニウム［（ＮＨ４）２ＭｏＯ４］溶液に、例えば水酸化カリウム水溶液の所定量を加えて撹拌混合した後、濃縮ろ過してＫ（カリウム）含有のパラモリブデン酸アンモニウム［３（ＮＨ４）２Ｏ・７ＭｏＯ３・４Ｈ２Ｏ］とし、ついでこれをか焼して、Ｋ（カリウム）を３０〜１５０ｐｐｍの割合で含有するＭｏＯ３粉末とすると共に、二次水素還元処理温度を従来の処理温度である７５０〜１１００℃に比して相対的に高温の１１５０〜１３００℃とする以外は同一の条件で高純度金属Ｍｏ粉末を製造すると、この結果製造された高純度金属Ｍｏ粉末は、前記ＭｏＯ３粉末に含有するＫ成分の作用で水素還元処理中に、粉末が粒成長して粗粒化し、Ｋ成分の混合割合を上記の通り３０〜１５０ｐｐｍとした場合に、５．５〜７．５μｍの平均粒径およびＪＩＳ・Ｒ１６２６に基づくＢＥＴ値で０．０７〜０．２ｍ２／ｇの比表面積をもった粗粒となると共に、相対的に高温の還元温度である１１５０〜１３００℃での前記二次水素還元処理で、不可避不純物と共に、粗粒化添加成分であるＫ成分が除去されて、１０ｐｐｍ以下に低減することと相俟って、９９．９９質量％以上の高純度をもつようになること。
以上（ａ）〜（ｃ）に示される研究結果を得たのである。
(C) In the production of the conventional high-purity metal Mo powder, for example, a predetermined amount of an aqueous potassium hydroxide solution is added to, for example, an ammonium molybdate [(NH 4 ) 2 MoO 4 ] solution and stirred and mixed, followed by concentration filtration. K (potassium) -containing ammonium paramolybdate [3 (NH 4 ) 2 O · 7MoO 3 · 4H 2 O], which is then calcined to contain K (potassium) in a proportion of 30 to 150 ppm. High purity metal Mo powder under the same conditions except that it is MoO 3 powder and the secondary hydrogen reduction treatment temperature is relatively high, 1150 to 1300 ° C. as compared to the conventional treatment temperature of 750 to 1100 ° C. When producing a high-purity metal Mo powder results produced, during reduction with hydrogen under the action of K component contained in the MoO 3 powder, powder is coarsened by grain growth When the mixing ratio of K component was 30~150ppm described above, the specific surface area of 0.07~0.2m 2 / g in BET value based on the average particle size and JIS · R1626 of 5.5~7.5μm In addition to the inevitable impurities, the K component, which is a coarsening additive component, is removed in the secondary hydrogen reduction treatment at 1150-1300 ° C., which is a relatively high reduction temperature. Combined with the reduction to 10 ppm or less, it should have a high purity of 99.99% by mass or more.
The research results shown in (a) to (c) above were obtained.
この発明は、上記の研究結果に基づいてなされたものであって、粗粒化添加成分であるＫ（カリウム）の含有量が１０ｐｐｍ以下に低減され、かつ純度：９９．９９質量％以上の高純度を有すると共に、５．５〜７．５μｍの平均粒径および０．０７〜０．２ｍ２／ｇの比表面積を有する高純度金属Ｍｏ粗粒粉末の焼結体にして、純度：９９．９９質量％以上の高純度および理論密度比：９８％以上の高密度を有する、パーティクル発生のきわめて少ない高純度金属Ｍｏ薄膜の形成を可能とするスパッタリング用高純度高密度金属Ｍｏ焼結ターゲットに特徴を有するものである。 The present invention has been made based on the above research results, and the content of K (potassium) as a coarsening additive component is reduced to 10 ppm or less, and the purity is as high as 99.99% by mass or more. A sintered body of high-purity metal Mo coarse powder having a purity and an average particle diameter of 5.5 to 7.5 μm and a specific surface area of 0.07 to 0.2 m 2 / g. High purity high-density metal Mo sintered target for sputtering that enables formation of high-purity metal Mo thin films with high purity of 99% by mass or more and theoretical density ratio: 98% or more and extremely low particle generation It is what has.
なお、この発明の高純度高密度金属Ｍｏ焼結ターゲットにおいては、上記の通りこれの理論密度比と、原料粉末である高純度金属Ｍｏ粗粒粉末の平均粒径および比表面積との間には密接な関係があり、前記高純度金属Ｍｏ粗粒粉末の平均粒径が５．５μｍ未満にして、比表面積が０．２ｍ２／ｇを越えると、前記高純度金属Ｍｏ焼結ターゲットの理論密度比は９８％未満となってしまい、このような理論密度比が９８％未満の高純度金属Ｍｏ焼結ターゲットを用いて高純度金属Ｍｏ薄膜を形成した場合、前記薄膜中におけるパーティクルの発生数が急激に多くなって、高集積化に満足に対応することができないものであり、一方前記高純度金属Ｍｏ粗粒粉末の平均粒径が７．５μｍを越え、かつ比表面積が０．０７ｍ２／ｇ未満の粗粒になり過ぎると、これより製造された前記高純度金属Ｍｏ焼結ターゲットの強度が急激に低下し、スパッタ中にターゲット自体に割れが発生し易くなることことから、前記高純度金属Ｍｏ粗粒粉末の平均粒径を５．５〜７．５μｍにして、比表面積を０．０７〜０．２ｍ２／ｇと定めたものであり、したがって、この高純度金属Ｍｏ粗粒粉末を用いれば、９８％以上の高い理論密度比をもった高密度のスパッタリング用高純度金属Ｍｏ焼結ターゲットの製造が可能となり、さらにこのスパッタリング用高純度金属Ｍｏ焼結ターゲットを用いることによりパーティクル発生のきわめて少ない高純度金属Ｍｏ薄膜の形成が可能となるのである。 In the high-purity high-density metal Mo sintered target of the present invention, as described above, there is a difference between the theoretical density ratio and the average particle diameter and specific surface area of the high-purity metal Mo coarse powder as the raw material powder. When the average particle size of the high-purity metal Mo coarse powder is less than 5.5 μm and the specific surface area exceeds 0.2 m 2 / g, the theoretical density of the high-purity metal Mo sintered target is closely related. The ratio is less than 98%, and when a high-purity metal Mo thin film is formed using such a high-purity metal Mo sintered target having a theoretical density ratio of less than 98%, the number of particles generated in the thin film is However, the high purity metal Mo coarse powder has an average particle size exceeding 7.5 μm and a specific surface area of 0.07 m 2 / Coarse grains less than g Since the strength of the high-purity metal Mo sintered target produced from this will drop sharply, and the target itself is likely to crack during sputtering, the average of the high-purity metal Mo coarse powder The particle size is 5.5 to 7.5 μm and the specific surface area is determined to be 0.07 to 0.2 m 2 / g. Therefore, if this high purity metal Mo coarse powder is used, 98% or more It is possible to manufacture a high-purity high-purity metal Mo sintered target for sputtering with a high theoretical density ratio. Further, by using this high-purity metal Mo sintered target for sputtering, high-purity metal Mo with very little particle generation can be obtained. A thin film can be formed.
また、この発明の高純度高密度金属Ｍｏ焼結ターゲットにおいては、その純度を９９．９９質量％以上の高純度として、これを用いて成膜される高純度金属Ｍｏ薄膜が９９．９９質量％以上の純度をもつようにしたものであり、この場合前記高純度金属Ｍｏ薄膜の純度が９９．９９質量％未満では、例えば液晶ディスプレイには適用することができないものである。 In the high-purity high-density metal Mo sintered target of the present invention, the purity is 99.99% by mass or more, and the high-purity metal Mo thin film formed using this is 99.99% by mass. In this case, if the purity of the high-purity metal Mo thin film is less than 99.99% by mass, it cannot be applied to, for example, a liquid crystal display.
この発明の高純度高密度金属Ｍｏ焼結ターゲットは、粗粒化添加成分であるＫ（カリウム）の含有量が１０ｐｐｍ以下に低減され、かつ９９．９９質量％以上の高純度を有すると共に、５．５〜７．５μｍの平均粒径および０．０７〜０．２ｍ２／ｇの比表面積を有する高純度金属Ｍｏ粗粒粉末を原料粉末として用いることにより、純度：９９．９９質量％以上の高純度および理論密度比：９８％以上の高密度を有するようになるものであり、この結果パーティクルの発生がきわめて少なく、例えば高集積度が要求される液晶ディスプレイなどに適用することができる高純度金属Ｍｏ薄膜の形成を可能となるものである。 The high-purity high-density metal Mo sintered target of the present invention has a K (potassium) content, which is a coarsening additive component, reduced to 10 ppm or less and has a high purity of 99.99% by mass or more. By using a high-purity metal Mo coarse powder having an average particle diameter of 5-7.5 μm and a specific surface area of 0.07-0.2 m 2 / g as a raw material powder, the purity: 99.99 mass% or more High purity and theoretical density ratio: It has a high density of 98% or more. As a result, the generation of particles is extremely small, and the high purity can be applied to, for example, a liquid crystal display that requires a high degree of integration. A metal Mo thin film can be formed.
つぎに、この発明の高純度高密度金属Ｍｏ焼結ターゲットを実施例により具体的に説明する。 Next, the high-purity high-density metal Mo sintered target according to the present invention will be specifically described with reference to examples.
モリブデン酸アンモニウム溶液に、所定量の３０％水酸化カリウム（ＫＯＨ）水溶液を加えて撹拌混合した後、濃縮ろ過してＫ（カリウム）含有のパラモリブデン酸アンモニウムとし、ついでこれを６００℃でか焼して、それぞれ表１に示される割合でＫを含有し、かつ同じく表１に示される平均粒径をもったＫ含有三酸化モリブデン（以下、ＭｏＯ３で示す）粉末を調製し、これに同じく表１に示される条件で一次および二次水素還元処理を施すことによりこの発明にかかる高純度金属Ｍｏ粗粒粉末（以下、本発明Ｍｏ粗粒粉末という）Ａ〜Ｅをそれぞれ製造した。 A predetermined amount of 30% potassium hydroxide (KOH) aqueous solution is added to the ammonium molybdate solution, and the mixture is stirred and mixed. Then, the solution is concentrated and filtered to obtain K (potassium) -containing ammonium paramolybdate, which is then calcined at 600 ° C. Then, K-containing molybdenum trioxide (hereinafter referred to as MoO 3 ) powder containing K in the ratio shown in Table 1 and having the average particle diameter shown in Table 1 was prepared. High-purity metal Mo coarse particles (hereinafter referred to as “Mo coarse particles of the present invention”) A to E according to the present invention were produced by performing primary and secondary hydrogen reduction treatments under the conditions shown in Table 1.
また、比較の目的で、表１に示される通り原料である上記ＭｏＯ３粉末に対するＫ成分の配合を行わず、かつ二次水素還元処理温度を通常の温度である７５０〜１１００℃とする以外は同一の条件で、上記従来の高純度金属Ｍｏ粉末（以下、従来Ｍｏ粉末という）ａ〜ｅをそれぞれ製造した。 Moreover, for the purpose of comparison, as shown in Table 1, the K component is not added to the MoO 3 powder as a raw material, and the secondary hydrogen reduction treatment temperature is set to a normal temperature of 750 to 1100 ° C. Under the same conditions, the conventional high-purity metal Mo powders (hereinafter referred to as conventional Mo powders) a to e were produced.
また、表１には、この結果得られた本発明Ｍｏ粗粒粉末Ａ〜Ｅおよび従来Ｍｏ粉末ａ〜ｅのＫ成分の含有量、純度、平均粒径、および比表面積の測定結果を示した。 Table 1 shows the measurement results of the content, purity, average particle diameter, and specific surface area of the K component of the resulting Mo coarse particles A to E of the present invention and the conventional Mo powders a to e. .
ついで、この結果得られた本発明Ｍｏ粗粒粉末Ａ〜Ｅおよび従来Ｍｏ粉末ａ〜ｅのそれぞれを、表２に示される通り原料粉末として用い、これら原料粉末に、雰囲気圧力：９８０Ｐａの水素雰囲気中、７００℃に２時間保持の条件で水素清浄化処理を施して、粉末表面酸化物を除去し、もって粉末表面酸素量（粉末表面吸着酸素量）で測定して、粉末全体に占める割合で１００〜１５０ｐｐｍの範囲内の所定の酸素量に低減した状態で、それぞれ２５０ＭＰａの圧力でプレス成形して直径：９００ｍｍ×厚さ：１２ｍｍの寸法の円盤状圧粉体とし、この円盤状圧粉体に、圧力：１００ＭＰａ、温度：１２５０℃、保持時間：２時間の条件でＨＩＰ処理を施して焼結し、さらに機械加工にて直径：８９０ｍｍ×厚さ：１０ｍｍの寸法に仕上げることにより本発明高純度高密度金属Ｍｏ焼結ターゲット（以下、本発明ターゲットという）１〜５および従来高純度金属Ｍｏ焼結ターゲット（以下、従来ターゲットという）１〜５をそれぞれ製造した。 Subsequently, the resulting Mo coarse particles A to E of the present invention and the conventional Mo powders a to e were used as raw powders as shown in Table 2, and hydrogen pressure at 980 Pa was applied to these raw powders. In this, hydrogen cleaning treatment was performed at 700 ° C. for 2 hours to remove the powder surface oxide, and measured by the amount of oxygen on the surface of the powder (the amount of oxygen adsorbed on the surface of the powder). In a state reduced to a predetermined oxygen amount in the range of 100 to 150 ppm, each is press-molded at a pressure of 250 MPa to form a disk-shaped green compact having a diameter of 900 mm × thickness: 12 mm. In addition, it is sintered after being subjected to HIP treatment under conditions of pressure: 100 MPa, temperature: 1250 ° C., holding time: 2 hours, and further machined to a size of diameter: 890 mm × thickness: 10 mm. Thus, high-purity high-density metal Mo sintered targets (hereinafter referred to as the present invention target) 1 to 5 and conventional high-purity metal Mo sintered targets (hereinafter referred to as conventional targets) 1 to 5 of the present invention were produced, respectively.
また、同じく表２に示される通り、原料粉末として上記本発明Ｍｏ粗粒粉末Ｄを用い、これに２００ＭＰａの圧力でＣＩＰ（冷間静水圧プレス）処理を施して直径：１００ｍｍ×高さ：２５０ｍｍの寸法をもった円柱状圧粉体とし、ついで前記円柱状圧粉体をクラッシャーにて解砕し、目開：２ｍｍの篩にて篩分し、篩下粉末に、上記の条件と同じ条件で水素清浄化処理を施して、粉末表面酸化物を除去し、もって粉末表面酸素量（粉末表面吸着酸素量）で測定して、粉末全体に占める割合で１２０ｐｐｍの酸素量に低減した後、上記の本発明ターゲット１〜５の製造条件と同じ条件で、円盤状圧粉体とし、この円盤状圧粉体にＨＩＰ処理を施して焼結し、さらに機械加工を施すことにより本発明高純度高密度金属Ｍｏ焼結ターゲット６（以下、本発明ターゲット６という）を製造した。 Similarly, as shown in Table 2, the Mo coarse particle powder D of the present invention was used as a raw material powder, and subjected to a CIP (cold isostatic pressing) process at a pressure of 200 MPa to obtain a diameter of 100 mm × a height of 250 mm. And then crushing the cylindrical green compact with a crusher, sieving with a 2 mm sieve, and applying the same conditions as above to the underscreen powder. After removing the powder surface oxide by measuring with hydrogen, and measuring the amount of oxygen on the surface of the powder (the amount of oxygen adsorbed on the surface of the powder) and reducing the amount of oxygen to 120 ppm as a percentage of the whole powder, the above In the same conditions as the manufacturing conditions of the present invention targets 1 to 5, a disk-shaped green compact is obtained, and this disk-shaped green compact is subjected to HIP treatment and sintered, and further machined to produce the high purity and high purity of the present invention. Density metal Mo sintered target 6 , It was prepared as the present invention target 6).
表２に、この結果得られた本発明ターゲット１〜６および従来ターゲット１〜５の純度および理論密度比の測定結果を示した。 Table 2 shows the measurement results of the purity and theoretical density ratio of the present invention targets 1 to 6 and the conventional targets 1 to 5 obtained as a result.
ついで、上記の本発明ターゲット１〜６および従来ターゲット１〜５をそれぞれ純銅製バッキングプレートにろう付けした状態で、直流マグネトロンスパッタリング装置に取り付け、
スパッタガス：Ａｒ、
Ａｒガス雰囲気圧力：０．５Ｐａ、
スパッタ電力：４３．５ＫＷ、
の条件でスパッタを行い、直径：９００ｍｍのガラス板の表面に、全面に亘って厚さ：０．６μｍの高純度金属Ｍｏ薄膜（以下、Ｍｏ薄膜という）を形成した。
Next, in the state where the present invention targets 1 to 6 and the conventional targets 1 to 5 are brazed to a pure copper backing plate, they are attached to a DC magnetron sputtering apparatus,
Sputtering gas: Ar,
Ar gas atmosphere pressure: 0.5 Pa,
Sputtering power: 43.5kW
Sputtering was performed under the above conditions to form a high-purity metal Mo thin film (hereinafter referred to as Mo thin film) having a thickness of 0.6 μm over the entire surface of a glass plate having a diameter of 900 mm.
この結果得られたＭｏ薄膜について、任意箇所の直径：２００ｍｍの面積内に存在する最大径が０．５μｍ以上のパーティクル数をパーティクルカウンターにて測定した。この測定結果を表２に５ヶ所の平均値で示した。 With respect to the Mo thin film obtained as a result, the number of particles having a maximum diameter of 0.5 μm or more existing within an area of 200 mm in diameter at an arbitrary position was measured with a particle counter. The measurement results are shown in Table 2 as average values at five locations.
表１，２に示される結果から、粗粒化添加成分であるＫ（カリウム）の含有量が１０ｐｐｍ以下に低減され、かつ９９．９９質量％以上の高純度を有すると共に、５．５〜７．５μｍの平均粒径、並びに０．０７〜０．２ｍ２／ｇの比表面積を有する本発明Ｍｏ粗粒粉末Ａ〜Ｅを用いれば、純度：９９．９９質量％以上の高純度で、かつ理論密度比：９８％以上の高密度の本発明ターゲット１〜６を製造することができ、しかも前記本発明ターゲット１〜６を用いれば、パーティクルの発生がきわめて少ないＭｏ薄膜の形成が可能となるのに対して、９９．９９質量％以上の高純度ではあるが、平均粒径が２〜４μｍにして、比表面積が０．５〜１ｍ２／ｇの従来Ｍｏ粉末ａ〜ｅを用いて製造された従来ターゲット１〜５は、いずれも９８％未満の理論密度比をもつものであり、したがって、前記従来ターゲット１〜５を用いて成膜されたＭｏ薄膜ではパーティクルの発生がきわめて多いものとなっていることが明らかである。 From the results shown in Tables 1 and 2, the content of K (potassium), which is a coarsening additive component, is reduced to 10 ppm or less and has a high purity of 99.99% by mass or more and 5.5 to 7 If the present invention Mo coarse particles A to E having an average particle diameter of 0.5 μm and a specific surface area of 0.07 to 0.2 m 2 / g are used, the purity is as high as 99.99% by mass or more, and The present invention targets 1 to 6 having a theoretical density ratio of 98% or more can be produced, and if the present invention targets 1 to 6 are used, it is possible to form a Mo thin film with very few particles. On the other hand, although it has a high purity of 99.99% by mass or more, it is manufactured using conventional Mo powders a to e having an average particle size of 2 to 4 μm and a specific surface area of 0.5 to 1 m 2 / g. All of the conventional targets 1 to 5 are 98 Less than it is those having a theoretical density ratio, thus, the in Mo thin film formed by using the conventional target 1-5 it is apparent that has as generation of particles is very large.
上述のように、この発明の高純度高密度金属Ｍｏ焼結ターゲットは、原料粉末として粗粒化添加成分であるＫ（カリウム）の含有量が１０ｐｐｍ以下に低減され、かつ９９．９９質量％以上の高純度を有すると共に、５．５〜７．５μｍの平均粒径および０．０７〜０．２ｍ２／ｇの比表面積を有する高純度金属Ｍｏ粗粒粉末を用いることにより純度：９９．９９質量％以上の高純度、および理論密度比：９８％以上の高密度を具備するようになり、かつ前記高純度および高密度によってパーティクル発生のきわめて少ない高純度金属Ｍｏ薄膜の形成が可能となるものであるから、例えば液晶ディスプレイの高性能化および大型化、さらに薄型化に十分満足に対応できるものである。 As described above, in the high-purity high-density metal Mo sintered target of the present invention, the content of K (potassium), which is a coarsening additive component, is reduced to 10 ppm or less as a raw material powder, and 99.99% by mass or more. By using high-purity metal Mo coarse powder having an average particle size of 5.5 to 7.5 μm and a specific surface area of 0.07 to 0.2 m 2 / g, the purity is 99.99. High purity of mass% or more and theoretical density ratio: High density of 98% or more, and the high purity and high density enable formation of a high purity metal Mo thin film with very few particles. Therefore, for example, the liquid crystal display can be satisfactorily coped with high performance, large size, and thinning.
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