JP2005116602A - Circuit board and its manufacturing method - Google Patents
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- JP2005116602A JP2005116602A JP2003345442A JP2003345442A JP2005116602A JP 2005116602 A JP2005116602 A JP 2005116602A JP 2003345442 A JP2003345442 A JP 2003345442A JP 2003345442 A JP2003345442 A JP 2003345442A JP 2005116602 A JP2005116602 A JP 2005116602A
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- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 79
- 239000002184 metal Substances 0.000 claims abstract description 79
- 239000000919 ceramic Substances 0.000 claims abstract description 69
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000000463 material Substances 0.000 claims abstract description 38
- 238000000576 coating method Methods 0.000 claims abstract description 28
- 239000011248 coating agent Substances 0.000 claims abstract description 27
- 238000005530 etching Methods 0.000 claims description 32
- 239000003566 sealing material Substances 0.000 claims description 4
- 238000009413 insulation Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 description 18
- 238000005219 brazing Methods 0.000 description 15
- 239000010949 copper Substances 0.000 description 15
- 239000000243 solution Substances 0.000 description 12
- 239000010936 titanium Substances 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 8
- 229910052719 titanium Inorganic materials 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 7
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 7
- 239000000945 filler Substances 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 239000009719 polyimide resin Substances 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- -1 ammonium halides Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 150000007522 mineralic acids Chemical class 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229960003280 cupric chloride Drugs 0.000 description 2
- HJOVHMDZYOCNQW-UHFFFAOYSA-N isophorone Chemical compound CC1=CC(=O)CC(C)(C)C1 HJOVHMDZYOCNQW-UHFFFAOYSA-N 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- KVBCYCWRDBDGBG-UHFFFAOYSA-N azane;dihydrofluoride Chemical compound [NH4+].F.[F-] KVBCYCWRDBDGBG-UHFFFAOYSA-N 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 235000010981 methylcellulose Nutrition 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- RVZRBWKZFJCCIB-UHFFFAOYSA-N perfluorotributylamine Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)N(C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F RVZRBWKZFJCCIB-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Abstract
Description
本発明は、高耐電圧の回路基板及びその製造方法に関する。 The present invention relates to a circuit board having a high withstand voltage and a manufacturing method thereof.
パワーモジュール等に利用される半導体装置用回路基板として、熱伝導率やコスト、安全性等の点から、アルミナ、ベリリア、窒化ケイ素、窒化アルミニウム等のセラミックス基板が利用されている。これらのセラミックス基板に、ＣｕやＡｌ等の金属回路や放熱板を接合し回路基板として用いられている。これらは、樹脂基板や樹脂層を絶縁材とする金属基板に対し、高い絶縁性が安定して得られる点が特長である。これらのセラミックスのうちで、窒化アルミニウムは、高熱伝導率、高絶縁性、無害性等の点で特に好適な材料である。 As circuit boards for semiconductor devices used for power modules and the like, ceramic substrates such as alumina, beryllia, silicon nitride, and aluminum nitride are used from the viewpoint of thermal conductivity, cost, safety, and the like. A metal circuit such as Cu or Al or a heat sink is bonded to these ceramic substrates and used as a circuit substrate. These are characterized in that high insulating properties can be stably obtained with respect to a resin substrate or a metal substrate using a resin layer as an insulating material. Among these ceramics, aluminum nitride is a particularly suitable material in terms of high thermal conductivity, high insulation, harmlessness, and the like.
近年のパワーモジュールの傾向は、従来のエレベーター，ＵＰＳ，産業機械等の分野に加えて、より信頼性を求められる電気鉄道用途やハイブリッドカー等に使用されるようになっており、特に、電気鉄道用途の場合、従来の使用電圧（１〜３ｋＶ）に対して、６〜９ｋＶというように、より高電圧化が進んできている。これに従い、本用途に使用されるセラミックス回路基板に対してもこれに十分耐えるものが要求されている。 In recent years, power modules have been used in electric railway applications and hybrid cars that require higher reliability in addition to conventional elevator, UPS, and industrial machinery fields. In the case of applications, higher voltages have been advanced, such as 6 to 9 kV, compared to conventional operating voltages (1 to 3 kV). In accordance with this, a ceramic circuit board used for this application is required to withstand this sufficiently.
高電圧に対するセラミックス回路基板の絶縁性については、セラミックス基板の厚みを厚くすることや、金属回路形状を変更することによって対応可能であるが、高電圧を印可することによって生じる部分放電電荷量の増加や金属回路表面部分からの放電については、有効な対策が見出されていない。部分放電電荷量が増大すると、その部分で局所的な材料劣化が起こり、最終的には絶縁破壊に至る恐れがあるので、その解決が急務となっている。沿面距離を広く取れば解決できるが、回路基板サイズが大きくなるという課題がある。そこで、セラミックス回路基板の金属回路とセラミクス基板の材質ないしは形状等が鋭意検討されているが、十分な解決策が見い出されていないのが現状である。 The insulation of ceramic circuit boards against high voltages can be dealt with by increasing the thickness of the ceramic board or changing the metal circuit shape, but the increase in the amount of partial discharge generated by applying high voltages. No effective measures have been found for the discharge from the surface of the metal circuit. When the amount of partial discharge charge increases, local material deterioration occurs in that portion, and eventually there is a possibility of causing dielectric breakdown. Therefore, there is an urgent need to solve the problem. The problem can be solved by widening the creepage distance, but the circuit board size is increased. Therefore, although the metal circuit of the ceramic circuit board and the material or shape of the ceramic board have been intensively studied, the present situation is that no sufficient solution has been found.
一方、パワーモジュール用回路基板の耐ヒートサイクル性を向上させるため、接合層のはみ出しを比較的長くしたり（特許文献１）、金属回路のコーナー部の曲率半径を特定することの提案がある（特許文献２）。しかしながら、これらの特許文献には、部分放電電荷量の増加や回路パターントップのエッジ部（ｃ部）からの放電対策について言及されていない。
本発明の目的は、上記課題に鑑み、回路基板サイズを大きくしたり、金属回路の形状を著しく変更することなしに、使用電圧が例えば６〜９ｋＶのような高電圧であっても、絶縁性や部分放電特性に関して十分に高い耐久性を示すセラミックス回路基板を提供することである。 In view of the above problems, the object of the present invention is to provide an insulating property even when the working voltage is a high voltage such as 6 to 9 kV without increasing the circuit board size or significantly changing the shape of the metal circuit. Another object of the present invention is to provide a ceramic circuit board that exhibits sufficiently high durability with respect to partial discharge characteristics.
すなわち、本発明は、セラミックス基板と金属回路とが接合層を介して接合されてなり、金属回路端部よりセラミックス基板表面の全面または一部がコーティング材で覆われていることを特徴とするセラミック回路基板であり、コーティング材の比誘電率が、セラミックス基板の比誘電率以下で、且つ、セラミックス基板用封止材料の比誘電率以上であり、コーティング材の比誘電率が、3.0〜10.0であることを特徴とするセラミックス回路基板である。さらに、該接合層の金属回路からのはみ出し長さ（ａ部）が２０〜１００μｍであり、回路パターントップにせり出し（ｂ部）がなく、回路パターントップのエッジ部（ｃ部）のＲサイズが１０〜１００μｍであることを特徴とするセラミックス回路基板である。 That is, the present invention is a ceramic characterized in that a ceramic substrate and a metal circuit are bonded via a bonding layer, and the entire surface or part of the surface of the ceramic substrate is covered with a coating material from the end of the metal circuit. It is a circuit board, the dielectric constant of the coating material is less than the dielectric constant of the ceramic substrate and more than the dielectric constant of the sealing material for the ceramic substrate, and the dielectric constant of the coating material is 3.0 to 10.0. There is a ceramic circuit board characterized by that. Further, the length of protrusion (a part) from the metal circuit of the bonding layer is 20 to 100 μm, there is no protrusion (b part) on the circuit pattern top, and the R size of the edge part (c part) of the circuit pattern top is A ceramic circuit board having a thickness of 10 to 100 μm.
また、金属板とセラミックス基板の接合体から、金属の不要部分をエッチングで除去して金属回路を形成させた後、全てのエッチングレジストを除いてから更に金属回路表面を２０〜６０μｍエッチングし、コーティング材を塗布することを特徴とするセラミックス回路基板の製造方法である。 Also, after removing unnecessary parts of the metal by etching from the joined body of the metal plate and the ceramic substrate to form a metal circuit, all the etching resist is removed and then the surface of the metal circuit is further etched by 20 to 60 μm, and coating is performed. A method of manufacturing a ceramic circuit board, comprising applying a material.
本発明によれば、回路基板サイズを大きくしたり、金属回路の形状を著しく変更することなしに、使用電圧が６〜９ｋＶのような高電圧であっても、絶縁性や部分放電特性に対して十分に高い耐久性、信頼性を示すセラミックス回路基板が得られる。また、本発明のセラミックス回路基板の製造方法によれば、上記特性を有する回路基板を容易に製造することができる。 According to the present invention, even if the operating voltage is as high as 6 to 9 kV without increasing the size of the circuit board or remarkably changing the shape of the metal circuit, the insulation and partial discharge characteristics can be reduced. And a ceramic circuit board exhibiting sufficiently high durability and reliability. Moreover, according to the method for manufacturing a ceramic circuit board of the present invention, a circuit board having the above characteristics can be easily manufactured.
本発明のセラミックス回路基板は、セラミックス基板と金属回路とが接合層を介して接合された構造を基本としている。金属回路を形成させた面の反対面に金属放熱板を形成させた構造のものや、金属回路又は金属放熱板にＮｉめっきが施されているもの等も本発明の対象である。 The ceramic circuit board of the present invention is based on a structure in which a ceramic substrate and a metal circuit are bonded through a bonding layer. A structure in which a metal heat sink is formed on the surface opposite to the surface on which the metal circuit is formed, a structure in which the metal circuit or the metal heat sink has Ni plating, and the like are also objects of the present invention.
セラミックス基板の材質は、高信頼性及び高絶縁性の点から、窒化アルミニウム又は窒化ケイ素が好ましい。セラミックス基板の厚みは目的によって自由に変えられる。通常は０．６３５ｍｍであるが、０．５〜０．３ｍｍ程度の薄物でもよい。高電圧下での絶縁耐圧を著しく高めたいときには、１〜３ｍｍの厚物が用いられる。 The material of the ceramic substrate is preferably aluminum nitride or silicon nitride from the viewpoint of high reliability and high insulation. The thickness of the ceramic substrate can be freely changed according to the purpose. Usually, it is 0.635 mm, but a thin object of about 0.5 to 0.3 mm may be used. When it is desired to remarkably increase the withstand voltage under high voltage, a thickness of 1 to 3 mm is used.
金属回路の材質としては、Ａｌ、Ｃｕ又はＡｌ−Ｃｕ合金が好ましい。これらは、単体ないしはクラッド等の積層体の形態で用いられる。Ａｌは、Ｃｕよりも降伏応力が小さく、塑性変形が大きいため、ヒートサイクルなどの熱応力負荷時において、セラミックス基板にかかる熱応力を大幅に低減できるので、Ｃｕよりもセラミックス基板に発生するクラックを抑制することが可能となり、高信頼性セラミックス回路基板となる。 As the material of the metal circuit, Al, Cu, or an Al—Cu alloy is preferable. These are used in the form of a single body or a laminate such as a clad. Since Al has a lower yield stress and larger plastic deformation than Cu, it can greatly reduce the thermal stress applied to the ceramic substrate when a thermal stress such as a heat cycle is applied. It becomes possible to suppress, and it becomes a highly reliable ceramic circuit board.
金属放熱板の材質は、金属回路と同一のものであることが一般的である。 The material of the metal heat radiating plate is generally the same as that of the metal circuit.
金属回路の厚みは、電気的、熱的特性の面からＡｌ回路の場合は０．４〜０．５ｍｍ、Ｃｕ回路の場合は０．３〜０．５ｍｍであることが好ましい。一方、金属放熱板を設ける場合その厚みは、半田付け時の反りを生じさせないように決定される。具体的には、Ａｌ回路の場合は０．１〜０．４ｍｍ、Ｃｕ回路は０．１５〜０．４ｍｍであることが好ましい。 The thickness of the metal circuit is preferably 0.4 to 0.5 mm in the case of an Al circuit and 0.3 to 0.5 mm in the case of a Cu circuit in terms of electrical and thermal characteristics. On the other hand, when a metal heat sink is provided, its thickness is determined so as not to cause warping during soldering. Specifically, it is preferable that the Al circuit is 0.1 to 0.4 mm and the Cu circuit is 0.15 to 0.4 mm.
セラミックス基板に金属回路を形成させるには、金属板とセラミックス基板とを接合した後、エッチングする方法、金属板から打ち抜かれた回路のパターンをセラミックス基板に接合する方法等によって行うことができる。これらの接合には、活性金属ろう付け法が用いられる。 Forming a metal circuit on a ceramic substrate can be performed by, for example, a method in which a metal plate and a ceramic substrate are bonded and then etching, a method in which a circuit pattern punched out from a metal plate is bonded to a ceramic substrate, or the like. An active metal brazing method is used for these joining.
接合層は、セラミックス基板に金属回路を活性金属ろう付け法によって接合したときに形成される。接合層の厚みは、厚すぎるとろう材成分が銅に拡散し銅を硬化させ信頼性に悪影響を与えるため、７μｍ以下であることが好ましい。ろう材の金属成分は銀及び／又は銅を主成分とし、溶融時のセラミックス基板との濡れ性を確保するためにチタンを副成分とする。このチタンは、セラミックス基板の窒素成分と反応して窒化物（ＴｉＮ）となり接合体の結合を強固なものとする。チタン以外の活性金属として、ジルコニウム、ハフニウム、ニオブ、タンタル、バナジウム等と併用することもできる。これらのチタン以外の活性金属はろう材の融点を降下させる。 The bonding layer is formed when a metal circuit is bonded to the ceramic substrate by an active metal brazing method. If the thickness of the bonding layer is too thick, the brazing filler metal component diffuses into the copper and hardens the copper, thereby adversely affecting the reliability. Therefore, the bonding layer is preferably 7 μm or less. The metal component of the brazing material contains silver and / or copper as a main component, and titanium as a subcomponent in order to ensure wettability with the ceramic substrate during melting. This titanium reacts with the nitrogen component of the ceramic substrate to become nitride (TiN), thereby strengthening the bond of the joined body. As active metals other than titanium, zirconium, hafnium, niobium, tantalum, vanadium or the like can be used in combination. These active metals other than titanium lower the melting point of the brazing material.
ろう材の金属成分の割合の一例を示せば、銀８０〜１００部（質量部、以下同じ）、銅２０〜０部の合計１００部に対し、チタン２〜４部、チタン以外の活性金属０〜６部、特に銀８５〜９０部、銅１５〜１０部の合計１００部に対し、チタン２〜４部、チタン以外の活性金属２〜５部であることが好ましい。 If an example of the ratio of the metal component of a brazing material is shown, active metal other than titanium 2-4 parts of titanium with respect to a total of 100 parts of silver 80-100 parts (mass part, hereafter the same) and copper 20-0 parts 0 It is preferable that it is 2-5 parts of titanium, and 2-5 parts of active metals other than titanium with respect to a total of 100 parts of ~ 6 parts, especially 85-90 parts of silver, and 15-10 parts of copper.
ろう材はペースト又は箔として用いられる。ペーストは、上記ろう材の金属成分に有機溶剤及び必要に応じて有機結合剤を加え、ロール、ニーダー、万能混合機、らいかい機等で混合することによって調製することができる。有機溶剤としては、メチルセルソルブ、テルピネオール、イソホロン、トルエン等、また有機結合剤としては、エチルセルロース、メチルセルロース、ポリメタクリレート等が一般的に使用される。 The brazing material is used as a paste or foil. The paste can be prepared by adding an organic solvent and, if necessary, an organic binder to the metal component of the brazing filler metal, and mixing with a roll, a kneader, a universal mixer, a raking machine, or the like. As the organic solvent, methyl cellosolve, terpineol, isophorone, toluene and the like are generally used, and as the organic binder, ethyl cellulose, methyl cellulose, polymethacrylate and the like are generally used.
本発明では、セラミックス回路基板の金属回路端部よりセラミックス基板の表面の全面または一部がコーティング材で覆われている。なお、このコーティング材の比誘電率は、セラミックス基板の比誘電率以下で、且つ、セラミックス基板の封止材料、例えば、シリコンゲル、エポキシ樹脂、絶縁オイル、絶縁ガス等の比誘電率以上であることが好ましい。具体的には比誘電率が一般的な封止材料の比誘電率３．０以上で、窒化アルミニウムの比誘電率１０以下であることが電界強度を緩和し放電開始電圧を低減出来るため好ましい。 In the present invention, the entire surface or part of the surface of the ceramic substrate is covered with the coating material from the end of the metal circuit of the ceramic circuit substrate. The relative dielectric constant of the coating material is equal to or lower than the relative dielectric constant of the ceramic substrate and equal to or higher than the relative dielectric constant of the sealing material of the ceramic substrate, such as silicon gel, epoxy resin, insulating oil, insulating gas, etc. It is preferable. Specifically, it is preferable that the relative dielectric constant is 3.0 or more for a general sealing material and 10 or less for aluminum nitride because the electric field strength can be relaxed and the discharge start voltage can be reduced.
コーティング材料は、特に限定されるものではなく、例えば、ポリイミド樹脂、エポキシ樹脂、シリコン樹脂、または、これらの樹脂にアルミナやシリカ、窒化アルミニウムといったフィラーが混合されているものや、アルミナゾルなどの無機物が使用可能であるが、中でもフィラー含有ポリイミド樹脂の使用が作業性、耐熱性の点で好ましい。 The coating material is not particularly limited. For example, a polyimide resin, an epoxy resin, a silicon resin, a material in which a filler such as alumina, silica, or aluminum nitride is mixed with these resins, or an inorganic material such as alumina sol is used. Among them, use of a filler-containing polyimide resin is preferable in terms of workability and heat resistance.
コーティング材の厚みは特に限定されないが、５μｍ〜３００μｍが好ましく、２０μｍ〜１５０μｍがより好ましい。５μｍ未満であるとコーティング被膜が薄すぎ回路端部の電界集中を緩和できないし、一方、３００μｍを超えると、セラミックス基板との熱膨張率の差異により熱衝撃等で剥離が発生する場合がある。 Although the thickness of a coating material is not specifically limited, 5 micrometers-300 micrometers are preferable and 20 micrometers-150 micrometers are more preferable. If the thickness is less than 5 μm, the coating film is too thin to reduce the electric field concentration at the end of the circuit. On the other hand, if it exceeds 300 μm, peeling may occur due to thermal shock or the like due to the difference in thermal expansion coefficient with the ceramic substrate.
本発明のセラミックス回路基板は、接合層のはみ出し長さが２０〜１００μｍであることが好ましく、３０〜５０μｍがより好ましい。はみ出し長さが２０μｍ未満であると、熱衝撃によりセラミックス基板にクラックが入り絶縁不良を起こす場合がある。一方、１００μｍより大きくなると、使用電圧が６〜９ｋＶのような高電圧において、部分放電電荷量が１０ｐＣ以上となり部分放電特性の改善が十分でなくなる。ここではみ出し長さとは、金属部材の端部よりはみ出した接合層の長さを意味する。接合層のはみ出し長さと厚みは、接合層のエッチング条件、塗布条件によって調整することができる。接合層は、上記ろう材の金属成分、その合金、その窒化物などで構成されている。 In the ceramic circuit board of the present invention, the protruding length of the bonding layer is preferably 20 to 100 μm, and more preferably 30 to 50 μm. If the overhang length is less than 20 μm, the ceramic substrate may crack due to thermal shock and cause insulation failure. On the other hand, when it exceeds 100 μm, the partial discharge charge amount becomes 10 pC or more at a high voltage such as a working voltage of 6 to 9 kV, and the partial discharge characteristics are not sufficiently improved. Here, the protruding length means the length of the bonding layer protruding from the end of the metal member. The protruding length and thickness of the bonding layer can be adjusted according to the etching conditions and coating conditions of the bonding layer. The joining layer is composed of the metal component of the brazing material, its alloy, its nitride, and the like.
金属回路のエッジ部の形状は、回路パターントップのエッジ部（ｃ部）のＲサイズが１０〜１００μｍであることが好ましく、４０〜８０μｍであることがより好ましい。Ｒサイズが１０μｍ未満では、高電圧を印加した際パターンより放電する場合があり、一方、１００μｍを超えると、基板上にはんだ等で実装部品を搭載する際、部品が傾いたり、実装できなくなる場合がある。また、エッジ部の形状は、パターンエッチング後にパターン表面をエッチングすることで調整可能である。 As for the shape of the edge part of a metal circuit, it is preferable that R size of the edge part (c part) of a circuit pattern top is 10-100 micrometers, and it is more preferable that it is 40-80 micrometers. If the R size is less than 10 μm, the pattern may discharge when a high voltage is applied. On the other hand, if the R size exceeds 100 μm, the component may be tilted or cannot be mounted when mounting the component with solder or the like on the substrate. There is. Further, the shape of the edge portion can be adjusted by etching the pattern surface after pattern etching.
本発明においては、回路端部にコーティング材を塗布すること、接合層のはみ出し長さと、エッジ部の形状を特定することによって、使用電圧が例えば６〜９ｋＶにおいても、部分放電電荷量を１０ｐＣ未満とすることが可能である。この理由は明確でないが、恐らく、回路形状自体に鋭い部分がないので電界集中が発生しにくく、さらに、滑らかな形状であるため部品実装後に封入される放電防止用ゲルとの密着性が向上したことと関係があるものと推定している。 In the present invention, the partial discharge charge amount is less than 10 pC even when the operating voltage is 6 to 9 kV, for example, by applying a coating material to the circuit edge, specifying the protrusion length of the bonding layer, and the shape of the edge. Is possible. The reason for this is not clear, but it is probably because the circuit shape itself has no sharp parts, so electric field concentration is unlikely to occur, and since it has a smooth shape, it has improved adhesion to the discharge preventing gel that is enclosed after component mounting. Is presumed to be related to
本発明における金属回路の形状は、セラミックス回路基板を切断した断面を顕微鏡で観察して確認できる。断面形状観察用サンプル作成の際は、必要に応じて樹脂包埋や研磨を施す場合がある。また、観察には、光学顕微鏡または走査型電子顕微鏡が使用可能である。 The shape of the metal circuit in the present invention can be confirmed by observing a cross section of the ceramic circuit board with a microscope. When preparing a sample for observing a cross-sectional shape, resin embedding or polishing may be performed as necessary. For observation, an optical microscope or a scanning electron microscope can be used.
さらに、本発明のセラミックス回路基板においては、回路パターントップにせり出し（ｂ部）がないことが好ましい。ここで、せり出しとは、回路基板の回路パターン部を断面より見た際の金属表面のパターントップ部がせり出している箇所を意味する（図２の従来品を参照）。せり出し部があると、放電の開始電圧が低くなり好ましくない。せり出しをなくすには、回路パターンを形成後、エッチングレジストを全て剥離し、再度エッチングすることによって行う。 Furthermore, in the ceramic circuit board of the present invention, it is preferable that the circuit pattern top does not protrude (b portion). Here, the protrusion means a portion where the pattern top portion of the metal surface protrudes when the circuit pattern portion of the circuit board is viewed from a cross section (see the conventional product in FIG. 2). If there is a protruding portion, the discharge starting voltage is lowered, which is not preferable. In order to eliminate the protrusion, the circuit pattern is formed, and then the etching resist is completely removed and then etched again.
本発明においては、金属回路をエッチングによって形成させた後、全てのエッチングレジストを除去し、さらに金属回路の表面を２０〜６０μｍ、好ましくは３０〜５０μｍエッチング除去することが、放電の開始電圧が高くなり好ましい。エッチング条件は特に限定されないが、塩化銅や塩化鉄水溶液といったハロゲン系エッチング液、フッ化水素アンモニウム等のハロゲン化アンモニウム、ハロゲン化水素、無機酸、過酸化水素等が使用可能であり、処理温度３０〜４０℃、処理時間５〜１０分程度の比較的穏やかな条件で処理することが好ましい。Ｎｉめっきを施す場合は、この後に行われる。その後、金属回路端部よりセラミックス基板表面の全面または一部にコーティング材を塗布する。金属端部のはみ出し部はコーティング材で完全に被覆されることが必要であり、コーティング材による金属端部の被覆長さは１００μｍ以上であることが好ましい。 In the present invention, after the metal circuit is formed by etching, all the etching resist is removed, and further, the surface of the metal circuit is removed by 20 to 60 μm, preferably 30 to 50 μm, so that the discharge starting voltage is high. It is preferable. Etching conditions are not particularly limited, but halogen-based etching solutions such as copper chloride and iron chloride aqueous solutions, ammonium halides such as ammonium hydrogen fluoride, hydrogen halides, inorganic acids, hydrogen peroxide, and the like can be used. It is preferable to perform the treatment under relatively mild conditions of ˜40 ° C. and a treatment time of about 5 to 10 minutes. When Ni plating is performed, it is performed after this. Thereafter, a coating material is applied to the whole or part of the surface of the ceramic substrate from the end of the metal circuit. The protruding portion of the metal end portion needs to be completely covered with the coating material, and the coating length of the metal end portion with the coating material is preferably 100 μm or more.
本発明において、全てのエッチングレジストを除去するまでの工程、即ち、金属板とセラミクス基板の接合体を製造する工程、エッチングレジストを印刷する工程、エッチングを行い金属回路を形成する工程、エッチングレジストを除去する工程は、従来一般的に用いられている方法が使用でき、特別な手段は特に必要でない。 In the present invention, a process up to the removal of all the etching resist, that is, a process of manufacturing a joined body of a metal plate and a ceramic substrate, a process of printing an etching resist, a process of etching to form a metal circuit, an etching resist For the removing step, a conventionally used method can be used, and no special means is required.
接合体を製造するためのろう材ペーストとしては、前記のものを用い、その塗布量を乾燥基準で５〜２０ｍｇ／ｃｍ２ とする。塗布量が５ｍｇ／ｃｍ２ 未満では未反応の部分が生じ、また２０ｍｇ／ｃｍ２ を超えると接合層を除去する時間が長くなる。塗布方法は特に限定されないが、例えばスクリーン印刷法、ロールコーター法等を採用することができる。 As the brazing material paste for producing the joined body, the above-mentioned one is used, and the coating amount is 5 to 20 mg / cm 2 on a dry basis. When the coating amount is less than 5 mg / cm 2 , an unreacted portion is generated, and when it exceeds 20 mg / cm 2 , the time for removing the bonding layer becomes long. The application method is not particularly limited, and for example, a screen printing method, a roll coater method, or the like can be employed.
その後、ろう材ペーストの塗布されたセラミックス基板に金属板を配置し、真空中、熱処理してから冷却する。熱処理の温度は８３０〜８６０℃、時間は３０〜６０分間、真空度は１×１０−６〜５×１０−５ｔｏｒｒであることが好ましい。熱処理温度が８３０℃未満及び／又は熱処理時間が３０分未満では、未反応の部分を生じる場合があり、一方、熱処理温度が８６０℃を超える場合及び／又は熱処理時間が６０分を超える場合は、反応層の均一性を保つことができなくなる恐れがある。また、真空度が１×１０−６ｔｏｒｒよりも高いと反応が活発となりすぎて接合層の均一性を保つことが困難となる場合があり、一方、５×１０−５ｔｏｒｒよりも低いとＴｉ等の活性金属の活性が失われ反応不足となる場合がある。 Thereafter, a metal plate is placed on the ceramic substrate to which the brazing paste has been applied, and after cooling in a vacuum, it is cooled. The heat treatment temperature is preferably 830 to 860 ° C., the time is 30 to 60 minutes, and the degree of vacuum is preferably 1 × 10 −6 to 5 × 10 −5 torr. When the heat treatment temperature is less than 830 ° C. and / or the heat treatment time is less than 30 minutes, an unreacted part may be generated. On the other hand, when the heat treatment temperature exceeds 860 ° C. and / or when the heat treatment time exceeds 60 minutes, There is a risk that the uniformity of the reaction layer cannot be maintained. On the other hand, if the degree of vacuum is higher than 1 × 10 −6 torr, the reaction may become too active and it may be difficult to maintain the uniformity of the bonding layer, while if it is lower than 5 × 10 −5 torr, Ti In some cases, the activity of the active metal is lost and the reaction becomes insufficient.
接合体から金属回路を形成するには、接合体の金属板にエッチングレジストを塗布しエッチングする。エッチングレジストとしては、紫外線硬化型や熱硬化型のものが挙げられる。また、エッチング液としては、金属が銅であるときには、塩化第２鉄溶液、塩化第２銅液、硫酸、過酸化水素水等の溶液が使用できるが、好ましいものとして、塩化第２鉄溶液、塩化第２銅溶液が挙げられる。 In order to form a metal circuit from the joined body, an etching resist is applied to the metal plate of the joined body and etched. Examples of the etching resist include an ultraviolet curing type and a thermosetting type. As the etching solution, when the metal is copper, a solution such as a ferric chloride solution, a cupric chloride solution, sulfuric acid, hydrogen peroxide solution, etc. can be used. A cupric chloride solution is mentioned.
エッチングによって不要な金属部分が除去された回路基板の金属回路間には、もともと塗布したろう材やその合金層・窒化物層更には金属回路パターン外にはみ出した不要ろう材がまだ残っている。そこで、まず第１処理としてＮＨ４ Ｆ等のハロゲン化アンモニウム水溶液、第２処理として硫酸、硝酸等の無機酸と過酸化水素水を含む溶液を用いてそれらを除去することが好ましい。無機酸の濃度は２〜４質量％、過酸化水素の濃度は０．５〜１質量％が望ましい。 Between the metal circuits of the circuit board from which unnecessary metal portions have been removed by etching, the originally applied brazing material, its alloy layer / nitride layer, and unnecessary brazing material that protrudes outside the metal circuit pattern still remain. Therefore, it is preferable to remove them first using an aqueous ammonium halide solution such as NH 4 F as the first treatment, and using a solution containing an inorganic acid such as sulfuric acid and nitric acid and hydrogen peroxide as the second treatment. The concentration of the inorganic acid is preferably 2 to 4% by mass, and the concentration of hydrogen peroxide is preferably 0.5 to 1% by mass.
その後に、全てのエッチングレジストをアルカリ溶液によって除去する。 Thereafter, all the etching resist is removed with an alkaline solution.
この後、金属回路を再度エッチングするが、エンチング量は２０〜６０μｍが好ましく、３０〜５０μｍがより好ましい。エッチング量が１０μｍ程度でも金属回路エッジ部のＲサイズは１０μｍ以上となるが、回路パターントップのせり出しがあるので、少なくとも２０μｍのエッチング除去が必要となる。一方、エッチング量が６０μｍよりも大きいと、金属回路エッジ部のＲサイズが１００μｍよりも大きくなる。 Thereafter, the metal circuit is etched again, and the amount of etching is preferably 20 to 60 μm, and more preferably 30 to 50 μm. Even when the etching amount is about 10 μm, the R size of the metal circuit edge portion is 10 μm or more, but since the top of the circuit pattern protrudes, at least 20 μm of etching removal is required. On the other hand, when the etching amount is larger than 60 μm, the R size of the metal circuit edge portion becomes larger than 100 μm.
その後、必要に応じニッケル等のめっき処理を回路に施すことも可能である。コーティング材を塗布する工程はこの後に行う。コーティング方法は特に限定されないが、例えばスクリーン印刷法、スプレー法、ディッピング法等が挙げられる。 Thereafter, if necessary, the circuit can be subjected to a plating process such as nickel. The step of applying the coating material is performed after this. The coating method is not particularly limited, and examples thereof include a screen printing method, a spray method, and a dipping method.
窒化アルミニウム基板にろう材ペースト（Ag９０部、Cu１０部、Ti３部、Zr２部を両主面に１０mg／cm2塗布した後に銅板をその上に配置し、８５０℃で１時間加熱して接合した後、所定のエッチングレジストパターンを印刷してから、塩化銅水溶液、次いで、過酸化水素と酸性フッ化アンモニウムの混合液を用いてエッチングを行い、銅回路を形成した。 After applying a brazing paste (Ag 90 parts, Cu 10 parts, Ti 3 parts, Zr 2 parts to both main surfaces to an aluminum nitride substrate at 10 mg / cm 2 on both main surfaces, a copper plate is placed thereon and heated and bonded at 850 ° C. for 1 hour. After printing a predetermined etching resist pattern, etching was performed using an aqueous copper chloride solution and then a mixed solution of hydrogen peroxide and ammonium acid fluoride to form a copper circuit.
エッチングレジストをアルカリ剥離液（炭酸水素ナトリウム１０％水溶液）で剥離した後、再度、塩化銅水溶液にてエッチングを行い、表１に示す量だけ除去した後、Ｎｉめっきを施して、セラミックス回路基板を製造した。なお、再エッチング量は、前後の厚みをマイクロメータで測定し、１０枚の平均値を求めた。この後、スクリーン印刷法でコーティング材を回路端部とセラミックス基板の回路面全面に塗布した。なお、コーティング材による金属端部の被覆長さは１５０μｍであった。 After stripping the etching resist with an alkaline stripping solution (sodium hydrogencarbonate 10% aqueous solution), etching is performed again with an aqueous copper chloride solution, and after removal by the amount shown in Table 1, Ni plating is applied to form a ceramic circuit board. Manufactured. In addition, the amount of re-etching measured the thickness before and behind with the micrometer, and calculated | required the average value of 10 sheets. Then, the coating material was apply | coated to the circuit end surface and the whole circuit surface of the ceramic substrate by the screen printing method. In addition, the coating length of the metal edge part by a coating material was 150 micrometers.
得られたセラミックス回路基板について、（１）金属回路の断面形状、（２）部分放電開始電圧、（３）Ｃ部における放電の有無を測定した。結果を表１に示す。 With respect to the obtained ceramic circuit board, (1) the cross-sectional shape of the metal circuit, (2) the partial discharge start voltage, and (3) the presence or absence of discharge at the C part were measured. The results are shown in Table 1.
〈使用材料〉
窒化アルミニウム基板：電気化学工業社製。寸法 ６０ｍｍ×５０ｍｍ×１ｍｍ、熱伝導率 １５０Ｗ／ｍ・Ｋ、曲げ強さ３６０ＭＰａ。
ろう材ペースト：Ag９０部、Cu１０部、Ti３部、Zr２部
エッチングレジスト：互応化学工業製。商品名：ＰＥＲ−２７Ｂ。
ポリイミド樹脂：宇部興産製。商品名：ユピコート。比誘電率３．２。
フィラー含有ポリイミド樹脂：（実施例２）ポリイミド樹脂３０質量部にアルミナ（昭和電工製、商品名：ＡＬ１７０）を７０質量部混合したもの。比誘電率６．２。（実施例３）ポリイミド樹脂１７質量部にアルミナ（昭和電工製、商品名：ＡＬ１７０）を８３質量部混合したもの。比誘電率７．９。
アルミナゾル：日産化学製、商品名：アルミナゾル５２０。
エポキシ樹脂：油化シェル製。エピコート８２８。比誘電率３．６。
フィラー含有エポキシ樹脂：エポキシ樹脂２０質量部にアルミナ（昭和電工製、商品名：ＡＬ１７０）を８０質量部混合したもの。比誘電率８．１（実施例９）
<Materials used>
Aluminum nitride substrate: manufactured by Denki Kagaku Kogyo. Dimensions 60 mm × 50 mm × 1 mm, thermal conductivity 150 W / m · K, bending strength 360 MPa.
Brazing material paste: 90 parts of Ag, 10 parts of Cu, 3 parts of Ti, 2 parts of Zr Etching resist: manufactured by Kyosei Chemical Industry Product name: PER-27B.
Polyimide resin: manufactured by Ube Industries. Product name: Iupicoat. Relative permittivity 3.2.
Filler-containing polyimide resin: (Example 2) Mixing 30 parts by mass of polyimide resin with 70 parts by mass of alumina (manufactured by Showa Denko, trade name: AL170). Dielectric constant 6.2. (Example 3) What mixed 83 mass parts of alumina (the Showa Denko make, brand name: AL170) with 17 mass parts of polyimide resins. Dielectric constant 7.9.
Alumina sol: manufactured by Nissan Chemical Co., Ltd., trade name: Alumina sol 520.
Epoxy resin: Made of oiled shell. Epicoat 828. Dielectric constant 3.6.
Filler-containing epoxy resin: 20 parts by mass of epoxy resin mixed with 80 parts by mass of alumina (made by Showa Denko, trade name: AL170). Dielectric constant 8.1 (Example 9)
〈測定方法〉
金属回路の断面形状：回路基板を樹脂包埋してから観察部位を切断し、その面を研磨してから走査型電子顕微鏡写真を撮影し、金属回路からのはみ出し長さ（ａ部）、回路パターントップのせり出し長さ（ｂ部）、回路パターントップのエッジ部（ｃ部）のＲサイズについて、いずれも平均値を示した。図１に、その模式図を示す。
部分放電開始電圧：絶縁油（住友３Ｍ社製「フロリナートＦＣ−７７」）にセラミックス回路基板を浸漬し、電圧を印可したときの部分放電電荷量が１０ｐＣを超えたときの電圧値を測定した。
ｃ部における放電の有無：放電したセラミックス回路基板を目視により観察した。放電すると放電箇所が黒く焦げるため放電箇所がどこかを確認した。
<Measuring method>
Cross section of metal circuit: After embedding the circuit board with resin, cut the observation site, polish the surface, then take a scanning electron micrograph, projecting length from metal circuit (part a), circuit The average value was shown about the protrusion length (b part) of a pattern top, and R size of the edge part (c part) of a circuit pattern top. FIG. 1 shows a schematic diagram thereof.
Partial discharge start voltage: A ceramic circuit board was immersed in insulating oil ("Fluorinert FC-77" manufactured by Sumitomo 3M Co.), and the voltage value when the partial discharge charge amount when the voltage was applied exceeded 10 pC was measured.
Presence or absence of discharge in part c: The discharged ceramic circuit board was observed visually. When the discharge was performed, the discharge spot was burnt black, so the location of the discharge was confirmed.
表１から明らかなように、使用電圧６〜９ｋＶであっても、部分放電放電電荷量が１０ｐＣ以下で、しかもｃ部における放電のないことが判る。 As is apparent from Table 1, even when the operating voltage is 6 to 9 kV, it can be seen that the partial discharge discharge amount is 10 pC or less and there is no discharge in the c portion.
Claims (5)
After removing unnecessary parts of the metal by etching from the joined body of the metal plate and the ceramic substrate to form a metal circuit, all the etching resist is removed and then the surface of the metal circuit is further etched by 20 to 60 μm to obtain a coating material. The method for producing a ceramic circuit board according to claim 1, wherein the ceramic circuit board is applied.
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