JP2005109091A - Vacuum zipper for holding substrate - Google Patents

Vacuum zipper for holding substrate Download PDF

Info

Publication number
JP2005109091A
JP2005109091A JP2003339546A JP2003339546A JP2005109091A JP 2005109091 A JP2005109091 A JP 2005109091A JP 2003339546 A JP2003339546 A JP 2003339546A JP 2003339546 A JP2003339546 A JP 2003339546A JP 2005109091 A JP2005109091 A JP 2005109091A
Authority
JP
Japan
Prior art keywords
substrate
holding
vacuum chuck
gas flow
flow path
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003339546A
Other languages
Japanese (ja)
Other versions
JP4229380B2 (en
Inventor
Yoshinori Shigeno
能徳 重野
Shinichi Ueda
慎一 植田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP2003339546A priority Critical patent/JP4229380B2/en
Publication of JP2005109091A publication Critical patent/JP2005109091A/en
Application granted granted Critical
Publication of JP4229380B2 publication Critical patent/JP4229380B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vacuum zipper for holding a substrate which can suppress the diffuse reflection of an exposure and which can maintain the substrate in a high flatness state even when a light transparent substrate having a wide area used for a liquid crystal display, etc. is exposure-treated. <P>SOLUTION: The vacuum zipper 1, for holding the substrate having many small protrusion-like holding pins 3 arranged at an interval at a substrate holding surface side so that the gap of the holding pins 3 is formed in a gas channel 4, includes grooves each having a width of 0.1-1.0 mm and a depth of 0.05-0.5 mm or so that a dot-like recess corresponding to the groove width and depth is a pitch of twice to five times as large as the groove width at least at a bottom 4a of the gas channel 4 of the substrate holding surface and at least the top surface of the holding pin 3, and the front surface of the gas channel bottom 4a is formed in a surface roughness Ra=0.5-1.5 μm of a range. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、基板保持用真空チャックに関し、例えば、液晶ディスプレイ製作用の基板等の光透過性基板を露光処理する際、好適に用いることができる基板保持用真空チャックに関する。   The present invention relates to a substrate-holding vacuum chuck, and more particularly to a substrate-holding vacuum chuck that can be suitably used when exposing a light-transmitting substrate such as a substrate for producing a liquid crystal display.

液晶ディスプレイ素子の製作工程中には、透明なガラス基板等の光透過性基板上に回路パターンを形成する露光工程がある。
この露光工程は、通常、特定波長の光に感光するフォトレジストを光透過性基板、例えば、透明なガラス基板上にコーティングする工程と、回路パターンが形成されたマスク(レチクル)で前記ガラス基板を覆った状態で露光して、前記フォトレジストを感光させる工程とが含まれている。
During the manufacturing process of the liquid crystal display element, there is an exposure process for forming a circuit pattern on a light transmissive substrate such as a transparent glass substrate.
In this exposure process, the glass substrate is usually coated with a photoresist that is sensitive to light of a specific wavelength on a light-transmitting substrate, for example, a transparent glass substrate, and a mask (reticle) on which a circuit pattern is formed. Exposing in a covered state and exposing the photoresist.

このような露光工程で用いられる、例えば液晶ディスプレイ用の露光装置は、通常、前記マスク(レチクル)を装着するレチクルステージと、光透過性基板を吸着固定するプレートステージと、前記レチクルステージの上方に配置された露光光源と、前記露光光源からの光を集束させるレンズとを備えている。
そして、前記プレートステージには、一般に、光透過性基板を平らな状態で吸着固定する基板保持用真空チャックが設けられている。この基板保持用真空チャックは、プレートステージ上に装着されて、真空吸着される光透過性基板の平面性を保持し、かつプレートステージの移動時にも光透過性基板が動かないように固定する機能を有している。
An exposure apparatus for use in such an exposure process, for example, for a liquid crystal display usually has a reticle stage on which the mask (reticle) is mounted, a plate stage on which a light-transmitting substrate is sucked and fixed, and an upper side of the reticle stage. An exposure light source disposed; and a lens that focuses light from the exposure light source.
The plate stage is generally provided with a substrate holding vacuum chuck that sucks and fixes the light transmissive substrate in a flat state. This substrate holding vacuum chuck is mounted on the plate stage, maintains the flatness of the light transmissive substrate that is vacuum-adsorbed, and fixes the light transmissive substrate so that it does not move even when the plate stage moves. have.

この基板保持用真空チャックには、種々の構造、形状のものが知られ、実用化されているが、液晶ディスプレイ基板等の露光装置には、広面積でも比較的高い平面度が得られ、かつ、チャックと基板との接触面積が小さく、その間に塵埃等が挟まる不都合を可能な限り排除できるピン保持式の真空チャック、いわゆるピンチャック(真空ピンチャック)形式の基板保持用真空チャックが多く用いられる。   The substrate holding vacuum chucks are known in various structures and shapes and have been put into practical use. However, an exposure apparatus such as a liquid crystal display substrate can obtain a relatively high flatness even in a wide area, and A pin holding type vacuum chuck that can eliminate as much as possible the inconvenience that the contact area between the chuck and the substrate is small and dust is sandwiched between them, so-called pin chuck (vacuum pin chuck) type substrate holding vacuum chucks are often used. .

前記露光装置で一般に使用される従来の真空ピンチャックを図2の斜視図を参照して説明する。
図2に示すように、真空ピンチャック10は、チャック本体20と、そのチャック本体20の基板保持面Aのほぼ全面にわたって互いに所定の間隔をもって形成され、透明なガラス基板等の光透過性基板と接する頂面部30aを有する多数の小突起状の保持ピン30とからなる。
A conventional vacuum pin chuck generally used in the exposure apparatus will be described with reference to a perspective view of FIG.
As shown in FIG. 2, the vacuum pin chuck 10 includes a chuck body 20 and a light-transmitting substrate such as a transparent glass substrate, which are formed at a predetermined distance from each other over almost the entire surface of the substrate holding surface A of the chuck body 20. It consists of a large number of small protrusion-shaped holding pins 30 each having a top surface portion 30a in contact therewith.

そして、光透過性基板の載置時において、各保持ピン30によって形成される間隙と、載置された基板面により画定された空間は、互いに連通している。その結果、各保持ピン30の間隙(空間)は、吸引孔50から吸引した際、ガス流路40として機能する。
また、前記チャック本体20と保持ピン30とは、例えばセラミックスよりなり、通常一体に形成されている。
When the light-transmitting substrate is placed, the gap formed by each holding pin 30 and the space defined by the placed substrate surface communicate with each other. As a result, the gaps (spaces) between the holding pins 30 function as gas flow paths 40 when sucked from the suction holes 50.
The chuck body 20 and the holding pin 30 are made of, for example, ceramics and are usually integrally formed.

上記チャックは、前記液晶ディスプレイ用ガラス基板等を平面状にかつ厳密に固定保持することが求められる関係から、一般に温度変化に対して形状変化を起こさない材質、例えば、フォルステライト等の硬質なセラミックで形成されることが多い。   The chuck is generally made of a material that does not change its shape with respect to a temperature change, for example, a hard ceramic such as forsterite, because the liquid crystal display glass substrate and the like are required to be held flat and strictly fixed. It is often formed with.

そして、このような材質で構成された真空ピンチャック10の基板保持面Aに、照射された露光光線が当たった場合には、該光線のほとんどが基板保持面Aの表面で反射される。
そのため、フォトレジスト膜を形成した光透過性基板、例えば、透明なガラス基板を前記真空ピンチャック10によって保持し、フォトレジスト膜を露光した場合には、露光光線がフォトレジスト膜より透明なガラス基板を透過して、基板保持面Aに達し、そこで反射する。
この結果、フォトレジスト膜に乱反射光が入射し、形成されるレジストパターンの解像度、また形成されるレジストパターンの寸法精度が低下するという問題があった。
When the irradiated exposure light beam strikes the substrate holding surface A of the vacuum pin chuck 10 made of such a material, most of the light beam is reflected by the surface of the substrate holding surface A.
Therefore, when a light transmissive substrate on which a photoresist film is formed, for example, a transparent glass substrate is held by the vacuum pin chuck 10 and the photoresist film is exposed, the exposure light beam is more transparent than the photoresist film. , And reaches the substrate holding surface A where it is reflected.
As a result, irregularly reflected light is incident on the photoresist film, resulting in a problem that the resolution of the formed resist pattern and the dimensional accuracy of the formed resist pattern are lowered.

上記の不都合を回避するための方策もいくつか提案されており、例えば、特許文献1には、基板保持面の表面に露光波長の1/4の厚さの反射防止膜を形成した真空ピンチャックの発明、また基板保持面の表面に、露光光線を吸収する光吸収膜を形成し、更に前記膜の表面に露光波長の1/4の厚さの反射防止膜を形成した真空ピンチャックの発明が開示されている。   Several measures for avoiding the above inconvenience have been proposed. For example, Patent Document 1 discloses a vacuum pin chuck in which an antireflection film having a thickness of 1/4 of an exposure wavelength is formed on the surface of a substrate holding surface. And a vacuum pin chuck in which a light absorption film for absorbing exposure light is formed on the surface of the substrate holding surface, and an antireflection film having a thickness of 1/4 of the exposure wavelength is formed on the surface of the film. Is disclosed.

また、特許文献2には、本体部分がアルミナ燒結体からなるチャック本体の表面に表面反射率を低くするためのセラミック薄層、例えば、炭化珪素薄層(内部層)と透明アルミナ薄層(表面層)の2層構造のセラミック薄層を形成した露光用保持治具の発明が開示されている。   Further, in Patent Document 2, a ceramic thin layer for lowering the surface reflectivity on the surface of the chuck body whose main body portion is made of an alumina sintered body, for example, a silicon carbide thin layer (inner layer) and a transparent alumina thin layer (surface) An invention of an exposure holding jig in which a thin ceramic layer having a two-layer structure is formed is disclosed.

特開平5−234843号公報(第2頁第2欄第19行〜第36行)Japanese Patent Laid-Open No. 5-234443 (page 2, column 2, line 19 to line 36)

特開平8−139168号公報(第2頁第2欄第3行〜第20行)JP-A-8-139168 (page 2, column 2, line 3 to line 20)

しかしながら、特許文献1に示された反射防止膜を表面被覆したチャックは、光透過性基板脱着の際に生じる摩擦により、基板保持面の被覆層が摩耗し、摩耗変形が生じる。また、露光時に発生する熱により熱変形が生じ、更に電気的不安定性により放電不良を起こし易い等の種々の不都合が生じるという課題がある。特に、広面積の液晶ディスプレイ等のような大型の光透過性基板において使用することは難しいという課題がある。   However, the chuck whose surface is coated with the antireflection film disclosed in Patent Document 1 wears the coating layer on the substrate holding surface due to friction generated when the light-transmitting substrate is detached, and wear deformation occurs. In addition, there is a problem in that various inconveniences such as thermal deformation caused by heat generated during exposure and electric discharge instability easily occur due to electrical instability. In particular, there is a problem that it is difficult to use in a large light-transmitting substrate such as a large area liquid crystal display.

また、特許文献2に示された真空ピンチャックにあっては、表面に多数の突起状ピンとガス流路が形成され、複雑な形状を有している。そのため、透明アルミナと炭化珪素の2層からなるセラミック薄膜層を、真空ピンチャック(基板保持面)の表面に均質に欠陥なく良好な状態で形成することは困難で、特に大型の真空ピンチャックの製作が難しいという課題がある。
このように、現在に至るも、前記した課題が回避され、かつ露光の乱反射が抑制された新たな真空ピンチャックの出現が強く求められている。
Moreover, in the vacuum pin chuck shown in Patent Document 2, a large number of protruding pins and gas flow paths are formed on the surface and have a complicated shape. Therefore, it is difficult to form a ceramic thin film layer composed of two layers of transparent alumina and silicon carbide on the surface of the vacuum pin chuck (substrate holding surface) in a uniform and good state without any defects. There is a problem that production is difficult.
Thus, even now, there has been a strong demand for the appearance of a new vacuum pin chuck that avoids the above-described problems and suppresses exposure irregular reflection.

本発明は、従来の真空ピンチャックの不都合を解消するためになされたものであり、例え、液晶ディスプレイ等に用いられる広面積の光透過性基板を露光処理する場合であっても、露光の乱反射を抑止でき、しかも、該基板を高い平面度状態に維持できる基板保持用真空チャックを提供することを目的とする。   The present invention has been made to eliminate the disadvantages of the conventional vacuum pin chuck. For example, even when a light-transmitting substrate having a large area used for a liquid crystal display or the like is subjected to exposure processing, diffuse reflection of exposure is performed. An object of the present invention is to provide a vacuum chuck for holding a substrate that can suppress the above-described problem and can maintain the substrate in a high flatness state.

上記目的を達成するためになされた本発明にかかる基板保持用真空チャックは、基板保持面側に互いに間隙をもって配列した多数の小突起状の保持ピンを備え、前記保持ピンの間隙をガス流路とした基板保持用真空チャックにおいて、前記基板保持面のガス流路の少なくとも底面部には、幅0.1〜1.0mmで深さ0.05〜0.5mmの溝もしくは該溝幅及び深さに対応するドット状凹部が前記溝幅の2〜5倍のピッチで形成されていると共に、少なくとも、前記溝もしくは凹部の表面及び前記ガス流路底面部の表面が、表面粗さRa=0.5〜1.5μmの範囲に形成されていることを特徴としている。   A vacuum chuck for holding a substrate according to the present invention made to achieve the above object comprises a plurality of small projection-like holding pins arranged with gaps on the side of the substrate holding surface, and the gap between the holding pins is passed through a gas channel. In the substrate holding vacuum chuck, a groove having a width of 0.1 to 1.0 mm and a depth of 0.05 to 0.5 mm or a width and depth of the groove is provided on at least the bottom surface of the gas flow path of the substrate holding surface. Are formed at a pitch of 2 to 5 times the groove width, and at least the surface of the groove or the recess and the surface of the bottom surface of the gas flow path have a surface roughness Ra = 0. It is characterized by being formed in a range of 0.5 to 1.5 μm.

本発明にかかる基板保持用真空チャックは、互いに間隔をもって配列された小突起状の保持ピンの間に形成されるガス流路の底面部に、特定幅、特定深さの溝または該溝に対応するドット状凹部が特定ピッチで形成されていること、及び、少なくとも前記溝もしくは凹部の表面及びガス流路底面部の表面が、特定粗度に粗面形成されていることが構成上の特徴である。   The vacuum chuck for holding a substrate according to the present invention corresponds to a groove having a specific width and a specific depth on the bottom surface portion of a gas flow path formed between holding pins having small protrusions arranged at intervals. The dot-shaped concave portions to be formed are formed at a specific pitch, and at least the surface of the groove or the concave portion and the surface of the gas flow path bottom surface portion are roughened to a specific roughness. is there.

前記したように、本発明にかかる基板保持用真空チャックに形成された、ガス流路の底面部に特定のピッチで形成された溝またはドット状凹部は、光透過性基板を透過した露光光線が、基板保持面で反射されて生じる乱反射光の前記光透過性基板への再侵入を低減させる作用効果を奏する。   As described above, the grooves or dot-like recesses formed at a specific pitch on the bottom surface of the gas flow path formed in the substrate holding vacuum chuck according to the present invention have the exposure light beam transmitted through the light transmissive substrate. There is an effect of reducing the re-entry of the irregularly reflected light generated by being reflected by the substrate holding surface into the light-transmitting substrate.

本来的には反射防止は基板保持面の全面で機能させることが好ましいが、基板等のワークと接触する保持ピンの頂面部(ピントップ)は、鋭い凹凸や角等の存在がなく、滑らかな平面であることが、基板面との接触の際の基板損傷防止や歪み抑制の観点から必要である。
一方、本発明にかかる基板保持用真空チャックにあっては、保持ピンの頂面部の全面積と、ガス流路の底面部の全面積との比が1:10〜1:100であるため、ガス流路の底面部での反射を抑制でき、前記乱反射量をレジストの閾値以下に有効に低減できる。
In principle, it is preferable that the antireflection function is performed on the entire surface of the substrate holding surface, but the top surface portion (pin top) of the holding pin that comes into contact with the workpiece such as the substrate has no sharp irregularities or corners and is smooth. A flat surface is necessary from the viewpoint of preventing damage to the substrate and suppressing distortion during contact with the substrate surface.
On the other hand, in the substrate holding vacuum chuck according to the present invention, the ratio of the total area of the top surface portion of the holding pin and the total area of the bottom surface portion of the gas channel is 1:10 to 1: 100. Reflection at the bottom of the gas flow path can be suppressed, and the amount of irregular reflection can be effectively reduced below the resist threshold.

また、本発明にかかる基板保持用真空チャックは、その保持ピンは、その頂面部の相当径が0.5〜1.5mm、ガス流路の底面部からの高さが0.1〜1.0mm、配列ピッチが3.0〜6.0mmであることが、ガス逃げ部流路に形成される溝もしくはドット状凹部の形状、寸法、及びピッチに対する整合性が良く、前記乱反射光の低減効果が優れている点から好ましい。
また、その構成材は、硬脆材料が好ましく、炭化珪素であることが、黒色で耐熱性に優れ、熱膨張性が小さく、耐摩耗性に優れ、かつ妥当なコストで容易に入手できる等の観点からより好ましい。
更に、保持ピン頂面部の全面積とガス流路部の底面部の全面積との比が1:10〜1:100の範囲にあることが有効な乱反射光低減効果達成の観点から好ましい。
In the vacuum chuck for holding a substrate according to the present invention, the holding pin has an equivalent diameter of the top surface portion of 0.5 to 1.5 mm, and a height from the bottom surface portion of the gas channel of 0.1 to 1. 0 mm and an arrangement pitch of 3.0 to 6.0 mm have good consistency with the shape, size, and pitch of the grooves or dot-like recesses formed in the gas escape passage, and the effect of reducing the irregularly reflected light Is preferable from the viewpoint of superiority.
In addition, the constituent material is preferably a hard and brittle material, being silicon carbide, black, excellent in heat resistance, small in thermal expansion, excellent in wear resistance, and easily available at a reasonable cost, etc. More preferable from the viewpoint.
Furthermore, it is preferable that the ratio of the total area of the top surface portion of the holding pin and the total area of the bottom surface portion of the gas flow path portion is in the range of 1:10 to 1: 100 from the viewpoint of achieving an effective diffused light reduction effect.

また、前記溝もしくはドット状凹部は、レーザ加工により形成されたものであることが、その形状、サイズ、形成位置の正確な制御が容易である点から好ましい。
更に、前記溝もしくは凹部の表面及び前記ガス流路の底面部の表面が、ブラスト加工により粗面加工されていることが、粗面状態が好適で、適正な仕上が容易に達成できる観点から好ましい。
Moreover, it is preferable that the groove or the dot-shaped recess is formed by laser processing because the precise control of the shape, size, and formation position is easy.
Furthermore, it is preferable that the surface of the groove or the recess and the surface of the bottom surface of the gas flow path are roughened by blasting from the viewpoint that a rough surface state is suitable and proper finishing can be easily achieved. .

以上詳述したように、本発明にかかる基板保持用真空ピンチャックは、基板保持面のガス流路の底面部に特定幅、深さの溝またはドットが、特定ピッチで形成され、かつ、少なくとも前記溝もしくは凹部の表面及びガス流路底面部の表面が、特定の表面粗さに形成されていることにより、乱反射を抑制でき、しかも、光透過性基板の平面度を維持して保持することができる。   As described in detail above, the substrate holding vacuum pin chuck according to the present invention has grooves or dots having a specific width and depth formed at a specific pitch on the bottom surface of the gas flow path of the substrate holding surface, and at least The surface of the groove or recess and the surface of the gas channel bottom surface portion are formed with a specific surface roughness, so that irregular reflection can be suppressed, and the flatness of the light-transmitting substrate is maintained and maintained. Can do.

以下に本発明にかかる基板保持用真空チャックを図1に基づいて説明する。
図1は、本発明にかかる基板保持用真空チャック(真空ピンチャック)の一形態の一部構造を模式的に示した断面図である。
図1において、本発明にかかる基板保持用真空チャック(真空ピンチャック)1が、チャック本体2と多数の小突起状の保持ピン3とからなる点、及び該保持ピン3が光透過性基板と接する頂面部3aを有する点、更に吸引孔(図示せず)が設けられている点は、図2に示した従来型の真空ピンチャックと同じである。
A substrate holding vacuum chuck according to the present invention will be described below with reference to FIG.
FIG. 1 is a cross-sectional view schematically showing a partial structure of an embodiment of a substrate holding vacuum chuck (vacuum pin chuck) according to the present invention.
In FIG. 1, a substrate holding vacuum chuck (vacuum pin chuck) 1 according to the present invention comprises a chuck body 2 and a number of small projection-like holding pins 3, and the holding pins 3 are formed of a light transmitting substrate. The point which has the top surface part 3a which touches, and the point provided with the suction hole (not shown) are the same as the conventional vacuum pin chuck shown in FIG.

本発明の基板保持用真空チャック1では、図1に示されているように、ガス流路4の底面4aに微小な溝4bが形成されている点に特徴がある。
この溝4bは、幅0.1〜1.0mm、より好ましくは0.1〜0.3mm、深さ0.05〜0.5mm、より好ましくは0.1〜0.3mmに形成され、その形成密度は、この溝幅の2〜5倍のピッチ、より好ましくは該溝幅の2〜3倍のピッチで形成される。
The vacuum chuck 1 for holding a substrate according to the present invention is characterized in that a minute groove 4b is formed on the bottom surface 4a of the gas flow path 4 as shown in FIG.
The groove 4b is formed to have a width of 0.1 to 1.0 mm, more preferably 0.1 to 0.3 mm, a depth of 0.05 to 0.5 mm, and more preferably 0.1 to 0.3 mm. The formation density is 2 to 5 times the groove width, more preferably 2 to 3 times the groove width.

また、本発明においては、前記溝4bに代えて、その幅及び深さに対応するドット状凹部を形成してもよい。
この場合においてもその形成ピッチは前記溝形成のピッチと同じ範囲にする。
特にこれに限定されるものではないが、一つのドット状凹部の平均長さは0.05mm〜0.1mm程度で、深さは0.05mm〜0.1mm、各ドットの間隔はドット幅の2〜3倍程度が好ましい。
更に、本発明の基板保持用真空チャック1は、少なくとも保持ピン3の頂面部3a及び前記ガス流路の底面部4aは、その表面が粗さRa=0.5〜1.5μm、より好ましくは0.8〜1.0μmの範囲に粗面形成される。基板保持面Aの全表面が上記粗さに粗面加工されることが特に好ましい。
前記したように、保持ピン3の頂面部3aの表面粗さが前記範囲にあることが、保持する光透過性基板(例えば、透明なガラス基板)に基板損傷防止、歪み抑制の観点から好ましい。
In the present invention, instead of the groove 4b, a dot-shaped recess corresponding to the width and depth may be formed.
Even in this case, the formation pitch is set in the same range as the groove formation pitch.
Although not particularly limited to this, the average length of one dot-like recess is about 0.05 mm to 0.1 mm, the depth is 0.05 mm to 0.1 mm, and the interval between each dot is the dot width. About 2 to 3 times is preferable.
Further, in the vacuum chuck 1 for holding a substrate of the present invention, at least the top surface portion 3a of the holding pin 3 and the bottom surface portion 4a of the gas flow path have a roughness Ra = 0.5 to 1.5 μm, more preferably A rough surface is formed in the range of 0.8 to 1.0 μm. It is particularly preferable that the entire surface of the substrate holding surface A is roughened to the above roughness.
As described above, the surface roughness of the top surface portion 3a of the holding pin 3 is preferably in the above range from the viewpoint of preventing damage to the substrate and suppressing distortion of the light transmissive substrate to be held (for example, a transparent glass substrate).

また、必ずしもこれに限定されるものではないが、本発明の基板保持用真空チャック1は、前記保持ピン3が、頂面部を有する柱状又は錐台状で、その頂面部3aの相当径が0.5〜1.5mm、ガス流路4の底面部4aからの高さが0.1〜1.0mm、配列ピッチが3.0〜6.0mmであり、頂面部3aの端縁が面取りされ、かつ頂面部3aはほぼ円形であることが、乱反射を低減する上で好ましい。   Although not necessarily limited thereto, in the substrate holding vacuum chuck 1 according to the present invention, the holding pin 3 has a columnar or frustum shape having a top surface portion, and the equivalent diameter of the top surface portion 3a is 0. .5 to 1.5 mm, the height from the bottom surface portion 4 a of the gas flow path 4 is 0.1 to 1.0 mm, the arrangement pitch is 3.0 to 6.0 mm, and the edge of the top surface portion 3 a is chamfered. In addition, it is preferable that the top surface portion 3a is substantially circular in order to reduce irregular reflection.

ガス流路4の寸法、形状等はピン形状とその配列態様よりほぼ決定されるが、格子状あるいは同心円状であってよくまた不規則な形状であっても差し支えない。
また、前記保持ピン3の頂面部3aの全面積とガス流路4の底面部4aの全面積との比が1:10〜1:100であることが、乱反射光の低減の観点から好ましい。
ここで、ガス流路4の底面部4aの全面積とは、溝部4bの面積も含めた総面積を意味し、保持ピン3の頂面部3a以外の総面積をいう。
The size, shape, and the like of the gas flow path 4 are substantially determined by the pin shape and the arrangement thereof, but may be a lattice shape or a concentric shape, or may be an irregular shape.
The ratio of the total area of the top surface portion 3a of the holding pin 3 to the total area of the bottom surface portion 4a of the gas flow path 4 is preferably 1:10 to 1: 100 from the viewpoint of reducing irregular reflection light.
Here, the total area of the bottom surface portion 4 a of the gas flow path 4 means the total area including the area of the groove portion 4 b and means the total area other than the top surface portion 3 a of the holding pin 3.

この基板保持用真空チャック1を構成する材料としては、炭化珪素(SiO2)、アルミナ(Al23)、チタニア(TiO2),窒化珪素(Si34)等の他フォレストライト、コーディライト等を用いることができる。
本発明においては、素材自体が黒色軽量で、高温でも機械強度が大きく、低熱膨張性で、熱伝導性に優れ、適当な価格で容易に入手でき、かつ大径のチャック基板を容易に製作できる点、及び、本発明の表面形状を形成した場合に、その乱反射抑止性に優れている点から炭化珪素(SiO2)が特に好ましい。
The material constituting the vacuum chuck 1 for holding the substrate includes silicon carbide (SiO 2 ), alumina (Al 2 O 3 ), titania (TiO 2 ), silicon nitride (Si 3 N 4 ), and other forest lights and cordies. A light or the like can be used.
In the present invention, the material itself is black and light, has high mechanical strength even at high temperatures, has low thermal expansion, excellent thermal conductivity, can be easily obtained at an appropriate price, and can easily produce a large-diameter chuck substrate. In terms of the point and when the surface shape of the present invention is formed, silicon carbide (SiO 2 ) is particularly preferable because of its excellent irregular reflection suppression property.

前記基板保持面Aガス逃げ通路部4の底面部4aに溝4bを形成する具体的手段としては、例えば、保持ピン3が形成された基板保持面Aのガス流路4の底面部4aにレーザ光を照射してレーザ加工を施すことにより、所定の幅、深さの溝4bあるいはドット状凹部4bを形成する方法を挙げることができる。
この方法は、例えば、炭化珪素(SiC)材からなる底面部に所望の形状及び大きさの溝あるいはドット状凹部を所望ピッチで正確に形成することができるため好ましい。
As a specific means for forming the groove 4b in the bottom surface portion 4a of the substrate holding surface A gas escape passage portion 4, for example, a laser is applied to the bottom surface portion 4a of the gas flow path 4 of the substrate holding surface A on which the holding pins 3 are formed. A method of forming a groove 4b or a dot-like recess 4b having a predetermined width and depth by irradiating light and performing laser processing can be exemplified.
This method is preferable because, for example, a groove or a dot-shaped recess having a desired shape and size can be accurately formed at a desired pitch on a bottom surface portion made of a silicon carbide (SiC) material.

また、この溝またはドット状凹部が形成された基板保持面Aの表面を粗面化する方法としては、砥粒を用いたブラスト加工法を挙げることができる。
例えば、炭化珪素(SiC)、窒化ホウ素(BN)等の#180〜#600程度の粒度範囲の砥粒を用い、これを表面に向け噴射して該表面をブラスト加工により粗面化する。
このようにして形成された本発明にかかる基板保持用真空チャック1は、露光時に乱反射抑制作用を奏する。
An example of a method for roughening the surface of the substrate holding surface A on which the grooves or dot-like recesses are formed is a blasting method using abrasive grains.
For example, abrasive grains having a particle size range of about # 180 to # 600, such as silicon carbide (SiC) and boron nitride (BN), are used and sprayed toward the surface to roughen the surface by blasting.
The thus formed substrate holding vacuum chuck 1 according to the present invention exhibits an effect of suppressing irregular reflection during exposure.

まず、保持ピンを形成するため、保持ピンの形成パターンが形成されたマスク材を基体に付着させた後、SiC#400砥粒を用いてブラスト加工する。このようにして保持ピンが形成された基体(SiC円板:外径1000mm、厚さ40mm、保持ピン(頂面部)径1.0mm、ピッチ5.0mm、基板接触面積/ガス逃げ部面積=1:25)のガス流路の底面部に、レーザ加工にて幅0.8mm、深さ0.2mmの溝を1.5mmピッチで形成させた。
この溝形成後、前記マスク材を基体に付着させたまま、基板表面を再度SiC#600砥粒でブラスト加工して粗面化し、本発明の基板保持用真空チャックを得た(Ra=1.0μm)。
First, in order to form a holding pin, a mask material on which a holding pin formation pattern is formed is attached to a substrate, and then blasted using SiC # 400 abrasive grains. Substrate (SiC disk: outer diameter 1000 mm, thickness 40 mm, holding pin (top surface) diameter 1.0 mm, pitch 5.0 mm, substrate contact area / gas escape area = 1) on which the holding pins are thus formed : 25) Grooves having a width of 0.8 mm and a depth of 0.2 mm were formed at a pitch of 1.5 mm on the bottom of the gas flow path.
After forming the groove, the substrate surface was blasted again with SiC # 600 abrasive grains while the mask material was adhered to the substrate to roughen the substrate surface, and the substrate holding vacuum chuck of the present invention was obtained (Ra = 1. 0 μm).

この基板保持面Aを、露光波長に相当する波長の紫外光で反射率測定したところ、反射率は0.4%であった。
一方、保持ピンを形成したのみの基板(溝形成後、粗面加工をしていない基板)を同様の測定条件下に反射率測定したところ、その反射率は0.8〜1.0%であった。
尚、この実験に於いて測定した反射率とは、紫外線光を基板保持面に対し垂直に放射し、一定角度(30度)の受光器に入る反射光量を前記放射光量に対する百分率として表示したものである。
When the reflectance of this substrate holding surface A was measured with ultraviolet light having a wavelength corresponding to the exposure wavelength, the reflectance was 0.4%.
On the other hand, when the reflectance of a substrate on which only the holding pins are formed (the substrate that has not been roughened after groove formation) was measured under the same measurement conditions, the reflectance was 0.8 to 1.0%. there were.
Note that the reflectance measured in this experiment is a value obtained by radiating ultraviolet light perpendicular to the substrate holding surface and displaying the amount of reflected light entering the light receiver at a certain angle (30 degrees) as a percentage of the amount of radiated light. It is.

本発明にかかる基板保持用真空ピンチャックは、例えば、液晶ディスプレイ製作用の基板等の光透過性基板を露光処理する際、好適に用いることができる。   The vacuum pin chuck for holding a substrate according to the present invention can be suitably used, for example, when an optically transparent substrate such as a substrate for producing a liquid crystal display is exposed.

本発明にかかる基板保持用真空ピンチャック(真空ピンチャック)の一形態の構造を模式的に示した断面図である。It is sectional drawing which showed typically the structure of one form of the vacuum pin chuck (vacuum pin chuck) for board | substrate holding concerning this invention. 露光装置で一般に使用される従来の真空ピンチャックの斜視図である。It is a perspective view of the conventional vacuum pin chuck generally used with exposure apparatus.

符号の説明Explanation of symbols

1 基板保持用真空ピンチャック(真空ピンチャック)
2 チャック本体
3 保持ピン
3a ピン頂面部
4 ガス流路
4a (ガス流路の)底面部
4b 溝またはドット状凹部
A 基板保持面
1 Substrate holding vacuum pin chuck (vacuum pin chuck)
2 chuck body 3 holding pin 3a pin top surface portion 4 gas flow path 4a (gas flow path) bottom surface portion 4b groove or dot-shaped recess A substrate holding surface

Claims (6)

基板保持面側に互いに間隙をもって配列した多数の小突起状の保持ピンを備え、前記保持ピンの間隙をガス流路とした基板保持用真空チャックにおいて、
前記基板保持面のガス流路の少なくとも底面部には、幅0.1〜1.0mmで深さ0.05〜0.5mmの溝もしくは該溝幅及び深さに対応するドット状凹部が前記溝幅の2〜5倍のピッチで形成されていると共に、少なくとも、前記溝もしくは凹部の表面及び前記ガス流路底面部の表面が、表面粗さRa=0.5〜1.5μmの範囲に形成されていることを特徴とする基板保持用真空チャック。
In a substrate holding vacuum chuck comprising a large number of small protrusion-shaped holding pins arranged on the substrate holding surface side with gaps therebetween, and the gap between the holding pins as a gas flow path,
At least the bottom surface portion of the gas flow path of the substrate holding surface has a groove having a width of 0.1 to 1.0 mm and a depth of 0.05 to 0.5 mm or a dot-like recess corresponding to the groove width and depth. It is formed at a pitch of 2 to 5 times the groove width, and at least the surface of the groove or recess and the surface of the bottom surface of the gas flow path are in the range of surface roughness Ra = 0.5 to 1.5 μm. A vacuum chuck for holding a substrate, wherein the vacuum chuck is formed.
前記保持ピンは、その頂面部の相当径が0.5〜1.5mm、ガス流路の底面部からの高さが0.1〜1.0mm、配列ピッチが3.0〜6.0mmであることを特徴とする請求項1に記載された基板保持用真空チャック。   The holding pins have an equivalent diameter of the top surface portion of 0.5 to 1.5 mm, a height from the bottom surface portion of the gas flow path of 0.1 to 1.0 mm, and an arrangement pitch of 3.0 to 6.0 mm. The vacuum chuck for holding a substrate according to claim 1, wherein the vacuum chuck is for holding a substrate. 炭化珪素材で形成されていることを特徴とする請求項1または請求項2に記載された基板保持用真空チャック。   3. The substrate holding vacuum chuck according to claim 1, wherein the substrate holding vacuum chuck is made of a silicon carbide material. 前記保持ピンの頂面部の全面積と、ガス流路の底面部の全面積との比が1:10〜1:100であることを特徴とする請求項1乃至請求項3のいずれかに記載された基板保持用真空チャック。   The ratio between the total area of the top surface portion of the holding pin and the total area of the bottom surface portion of the gas flow path is 1:10 to 1: 100. Substrate holding vacuum chuck. 前記溝もしくはドット状凹部は、レーザ加工により形成されたものであることを特徴とする請求項1乃至請求項4のいずれかに記載された基板保持用真空チャック。   5. The substrate-holding vacuum chuck according to claim 1, wherein the groove or the dot-shaped recess is formed by laser processing. 前記溝もしくは凹部の表面、及び前記ガス流路の底面部の表面が、ブラスト加工により粗面加工されていることを特徴とする請求項1乃至請求項5のいずれかに記載された基板保持用真空チャック。   6. The substrate holding device according to claim 1, wherein the surface of the groove or recess and the surface of the bottom surface of the gas flow path are roughened by blasting. Vacuum chuck.
JP2003339546A 2003-09-30 2003-09-30 Vacuum chuck for substrate holding Expired - Fee Related JP4229380B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003339546A JP4229380B2 (en) 2003-09-30 2003-09-30 Vacuum chuck for substrate holding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003339546A JP4229380B2 (en) 2003-09-30 2003-09-30 Vacuum chuck for substrate holding

Publications (2)

Publication Number Publication Date
JP2005109091A true JP2005109091A (en) 2005-04-21
JP4229380B2 JP4229380B2 (en) 2009-02-25

Family

ID=34534713

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003339546A Expired - Fee Related JP4229380B2 (en) 2003-09-30 2003-09-30 Vacuum chuck for substrate holding

Country Status (1)

Country Link
JP (1) JP4229380B2 (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006064992A (en) * 2004-08-26 2006-03-09 Kyocera Corp Liquid crystal substrate holding base and manufacturing method therefor
WO2007022471A2 (en) * 2005-08-17 2007-02-22 Applied Materials, Inc. Substrate support having brazed plates and heater
JP2007258668A (en) * 2006-02-23 2007-10-04 Kyocera Corp Test piece holder
JP2011082579A (en) * 2006-02-23 2011-04-21 Kyocera Corp Sample holder
JP4755201B2 (en) * 2005-01-28 2011-08-24 ハンミ セミコンダクター カンパニー リミテッド Apparatus and processing method for processing suction pad
KR101196324B1 (en) * 2010-07-20 2012-11-01 가부시키가이샤 아루박 Light irradiation apparatus
US8899564B2 (en) 2009-02-23 2014-12-02 Sodick Co., Ltd. Colored ceramic vacuum chuck and manufacturing method thereof
JP2015211073A (en) * 2014-04-24 2015-11-24 京セラ株式会社 Low reflection member
JP2017183470A (en) * 2016-03-30 2017-10-05 京セラ株式会社 Placement member
JP2018019017A (en) * 2016-07-29 2018-02-01 京セラ株式会社 Member for placement
CN109314077A (en) * 2016-06-01 2019-02-05 佳能株式会社 Sucker, substrate keep equipment, patterning device and the method for manufacturing article
KR20210129929A (en) * 2020-04-21 2021-10-29 에이피시스템 주식회사 Chuck table, laser processing apparatus having the same and method for manufacturing support plate for chuck table

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006064992A (en) * 2004-08-26 2006-03-09 Kyocera Corp Liquid crystal substrate holding base and manufacturing method therefor
JP4502746B2 (en) * 2004-08-26 2010-07-14 京セラ株式会社 Liquid crystal substrate holder and manufacturing method thereof
JP4755201B2 (en) * 2005-01-28 2011-08-24 ハンミ セミコンダクター カンパニー リミテッド Apparatus and processing method for processing suction pad
US7705275B2 (en) 2005-08-17 2010-04-27 Applied Materials, Inc. Substrate support having brazed plates and resistance heater
JP2009504925A (en) * 2005-08-17 2009-02-05 アプライド マテリアルズ インコーポレイテッド Substrate support with brazing plate and resistance heater
WO2007022471A3 (en) * 2005-08-17 2007-06-07 Applied Materials Inc Substrate support having brazed plates and heater
KR100974130B1 (en) * 2005-08-17 2010-08-04 어플라이드 머티어리얼스, 인코포레이티드 Substrate support having brazed plates and heater
WO2007022471A2 (en) * 2005-08-17 2007-02-22 Applied Materials, Inc. Substrate support having brazed plates and heater
JP2007258668A (en) * 2006-02-23 2007-10-04 Kyocera Corp Test piece holder
JP2011082579A (en) * 2006-02-23 2011-04-21 Kyocera Corp Sample holder
JP4722006B2 (en) * 2006-02-23 2011-07-13 京セラ株式会社 Sample holder
US8899564B2 (en) 2009-02-23 2014-12-02 Sodick Co., Ltd. Colored ceramic vacuum chuck and manufacturing method thereof
KR101196324B1 (en) * 2010-07-20 2012-11-01 가부시키가이샤 아루박 Light irradiation apparatus
JP2015211073A (en) * 2014-04-24 2015-11-24 京セラ株式会社 Low reflection member
JP2017183470A (en) * 2016-03-30 2017-10-05 京セラ株式会社 Placement member
CN109314077A (en) * 2016-06-01 2019-02-05 佳能株式会社 Sucker, substrate keep equipment, patterning device and the method for manufacturing article
CN109314077B (en) * 2016-06-01 2023-06-02 佳能株式会社 Suction cup, substrate holding apparatus, patterning apparatus, and method of manufacturing article
JP2018019017A (en) * 2016-07-29 2018-02-01 京セラ株式会社 Member for placement
KR20210129929A (en) * 2020-04-21 2021-10-29 에이피시스템 주식회사 Chuck table, laser processing apparatus having the same and method for manufacturing support plate for chuck table
KR102346435B1 (en) * 2020-04-21 2022-01-05 에이피시스템 주식회사 Chuck table, laser processing apparatus having the same and method for manufacturing support plate for chuck table

Also Published As

Publication number Publication date
JP4229380B2 (en) 2009-02-25

Similar Documents

Publication Publication Date Title
JP4229380B2 (en) Vacuum chuck for substrate holding
TWI250332B (en) Substrate for optoelectronic device, manufacturing method of substrate for optoelectronic device, optoelectronic device, manufacturing method of optoelectronic device, electronic machine and mask
JP5597444B2 (en) Mask blank substrate manufacturing method, imprint mold mask blank manufacturing method, and imprint mold manufacturing method
JP2008027992A (en) Manufacturing method of substrate for euvl mask, and of euvl mask using the substrate
JP4786899B2 (en) Mask blank glass substrate manufacturing method, mask blank manufacturing method, reflective mask blank manufacturing method, exposure mask manufacturing method, reflective mask manufacturing method, and semiconductor device manufacturing method
JP5472065B2 (en) Glass substrate for photomask and method for producing the same
KR20110128738A (en) Synthetic quartz glass substrate and making method
JP2005043838A (en) Method for manufacturing substrate for photomask blank
US20110244171A1 (en) Low expansion glass substrate for reflection type mask and method for processing same
JP2011207757A (en) Method for producing glass substrate for mask blank, method for producing mask blank, method for producing reflection type mask blank, method for producing exposure mask, method for producing reflection type mask, and method for producing semiconductor device
JP2010258259A (en) Nano imprint transfer substrate and nano imprint transfer method
KR100604214B1 (en) Method of Selecting Photomask Blank Substrates
TWI506355B (en) Photomask substrate, method of manufacturing a photomask substrate, photomask blank, photomask, pattern transfer method, method of manufacturing liquid crystal display, and proximity gap evaluating method
JP4339214B2 (en) Transparent substrate for mask blank and manufacturing method thereof, and mask blank and manufacturing method thereof
JP2002011589A (en) Mask for laser beam machining, method and device for manufacturing the same, laser beam ablation machining device, and image display device made by the mask
JP6822084B2 (en) A method for manufacturing a glass substrate for a semiconductor and a glass substrate for a semiconductor having a non-through hole.
JP4647967B2 (en) Mask blank glass substrate manufacturing method, mask blank manufacturing method, exposure mask manufacturing method, and semiconductor device manufacturing method
JP2015214449A (en) Production method of glass substrate and glass substrate
US11860580B2 (en) Watch component and watch
JP6260149B2 (en) Reflective mask blank and reflective mask
JP6340800B2 (en) EUV exposure mask and manufacturing method thereof
JP6055732B2 (en) Mask blank substrate, mask blank, manufacturing method thereof, and manufacturing method of imprint mold
JP2005043835A (en) Substrate for photomask blank, photomask blank and photomask
TWI697033B (en) Manufacturing method of substrate for mask base, manufacturing method of mask base, manufacturing method of mask for transfer, manufacturing method of semiconductor element, substrate for mask base, mask base and transfer mask
JP2017227702A (en) Reflective photomask

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060307

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20070711

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20081128

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20081128

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20081128

R150 Certificate of patent or registration of utility model

Ref document number: 4229380

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111212

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111212

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121212

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121212

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131212

Year of fee payment: 5

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees