JP2005086210A - 窒化物系発光素子及びその製造方法 - Google Patents
窒化物系発光素子及びその製造方法 Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 31
- 229910003437 indium oxide Inorganic materials 0.000 claims abstract description 30
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000005253 cladding Methods 0.000 claims description 70
- 239000000654 additive Substances 0.000 claims description 26
- 230000000996 additive effect Effects 0.000 claims description 26
- 238000010438 heat treatment Methods 0.000 claims description 26
- 238000007740 vapor deposition Methods 0.000 claims description 13
- 229910052709 silver Inorganic materials 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 11
- 229910052725 zinc Inorganic materials 0.000 claims description 11
- 239000011701 zinc Substances 0.000 claims description 11
- 229910052749 magnesium Inorganic materials 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 238000010894 electron beam technology Methods 0.000 claims description 7
- 239000010948 rhodium Substances 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052703 rhodium Inorganic materials 0.000 claims description 6
- 229910052711 selenium Inorganic materials 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 229910052714 tellurium Inorganic materials 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 5
- 229910052746 lanthanum Inorganic materials 0.000 claims description 5
- 229910052748 manganese Inorganic materials 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000003570 air Substances 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 2
- 238000004806 packaging method and process Methods 0.000 abstract description 2
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 199
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 16
- 229910002601 GaN Inorganic materials 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 14
- 238000000151 deposition Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 239000011777 magnesium Substances 0.000 description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 7
- 239000010931 gold Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000010944 silver (metal) Substances 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- -1 nitride compound Chemical class 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910000480 nickel oxide Inorganic materials 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910019080 Mg-H Inorganic materials 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000007420 reactivation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】基板、n型クラッド層、発光層、p型クラッド層、オーミックコンタクト層及び反射層が順次に積層されており、オーミックコンタクト層は、インジウム酸化物に添加元素が添加されて形成される窒化物系発光素子である。このような窒化物系発光素子及びその製造方法によれば、p型クラッド層とのオーミック接触特性が改善されてフリップチップ発光素子のパッケージング時にワイヤボンディング効率及び収率を高め、低い比接触抵抗と優秀な電流−電圧特性とによって素子の発光効率を向上させ、素子の寿命を延長できる。
【選択図】図1
Description
20 p型クラッド層、
30 オーミックコンタクト層、
40 反射層、
100 発光素子、
110 基板、
120 バッファ層、
130 n型クラッド層、
140 発光層、
150 p型クラッド層、
180 p型電極パッド、
190 n型電極パッド、
230 オーミックコンタクト層、
240 反射層。
Claims (19)
- n型クラッド層とp型クラッド層間に発光層を備える窒化物系発光素子において、
前記発光層から出射される光を反射する反射層と、
前記反射層と前記p型クラッド層間にインジウム酸化物に添加元素が添加されて形成されたオーミックコンタクト層と、を備えることを特徴とする窒化物系発光素子。 - 前記添加元素は、Mg、Ag、Zn、Sc、Hf、Zr、Te、Se、Ta、W、Nb、Cu、Si、Ni、Co、Mo、Cr、Mn、Hg、Pr、La系列の元素のうち少なくとも一つを含むことを特徴とする請求項1に記載の窒化物系発光素子。
- 前記インジウム酸化物に対する前記添加元素の添加比は0.1〜49原子%であることを特徴とする請求項2に記載の窒化物系発光素子。
- 前記反射層は、ロジウム、銀及び亜鉛よりなる群から選択された何れか一つより形成されたことを特徴とする請求項1に記載の窒化物系発光素子。
- 前記オーミックコンタクト層の厚さは、0.1〜100nmであることを特徴とする請求項1に記載の窒化物系発光素子。
- 前記n型クラッド層の下部に基板が形成されており、
前記基板は、光を透過する素材より形成されたことを特徴とする請求項1に記載の窒化物系発光素子。 - 前記基板は、サファイアであることを特徴とする請求項6に記載の窒化物系発光素子。
- n型クラッド層とp型クラッド層間に発光層を備える窒化物系発光素子の製造方法において、
(a)基板上にn型クラッド層、発光層及びp型クラッド層が順次に積層された発光構造体の前記p型クラッド層上にインジウム酸化物に添加元素を添加したオーミックコンタクト層を形成する段階と、
(b)前記オーミックコンタクト層上に反射層を形成する段階と、
(c)前記(b)段階を経た積層構造体を熱処理する段階と、を含むことを特徴とする窒化物系発光素子の製造方法。 - 前記(a)段階で、前記インジウム酸化物に添加される前記添加元素は、Mg、Ag、Zn、Sc、Hf、Zr、Te、Se、Ta、W、Nb、Cu、Si、Ni、Co、Mo、Cr、Mn、Hg、Pr、La系列の元素のうち少なくとも一つを含むことを特徴とする請求項8に記載の窒化物系発光素子の製造方法。
- 前記インジウム酸化物に対する前記添加元素の添加比は0.1〜49原子%であることを特徴とする請求項9に記載の窒化物系発光素子の製造方法。
- 前記(b)段階で、前記反射層は、ロジウム、銀及び亜鉛よりなる群から選択された何れか一つより形成することを特徴とする請求項8に記載の窒化物系発光素子の製造方法。
- 前記オーミックコンタクト層は、0.1〜100nmの厚さに形成することを特徴とする請求項8に記載の窒化物系発光素子の製造方法。
- 前記基板は、光を透過させうる素材より形成することを特徴とする請求項8に記載の窒化物系発光素子の製造方法。
- 前記基板は、サファイアであることを特徴とする請求項13に記載の窒化物系発光素子の製造方法。
- 前記熱処理段階は、200〜700℃で行うことを特徴とする請求項8に記載の窒化物系発光素子の製造方法。
- 前記熱処理段階は、前記積層構造体が内蔵された反応器内に窒素、アルゴン、ヘリウム、酸素、水素及び空気よりなる群から選択された少なくとも何れか一つを含む気体雰囲気で行われることを特徴とする請求項15に記載の窒化物系発光素子の製造方法。
- 前記熱処理段階は、前記積層構造体が内蔵された反応器内を真空状態に維持した状態で行われることを特徴とする請求項15に記載の窒化物系発光素子の製造方法。
- 前記熱処理段階は、10秒〜2時間行われることを特徴とする請求項15に記載の窒化物系発光素子の製造方法。
- 前記オーミックコンタクト層は、電子ビーム蒸着器、熱蒸着器及び二重型の熱蒸着器のうち何れか一つの機器より形成することを特徴とする請求項8に記載の窒化物系発光素子の製造方法。
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KR1020030062830A KR100571816B1 (ko) | 2003-09-08 | 2003-09-08 | 질화물계 발광소자 및 그 제조방법 |
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US (2) | US7205576B2 (ja) |
EP (1) | EP1513203A3 (ja) |
JP (1) | JP2005086210A (ja) |
KR (1) | KR100571816B1 (ja) |
CN (1) | CN100474639C (ja) |
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JP2006303430A (ja) * | 2005-04-15 | 2006-11-02 | Samsung Electro Mech Co Ltd | フリップチップ型の窒化物半導体発光素子 |
JP2006313888A (ja) * | 2005-05-03 | 2006-11-16 | Samsung Electro Mech Co Ltd | 窒化物系半導体発光素子及びその製造方法 |
JP2014519719A (ja) * | 2011-08-02 | 2014-08-14 | 株式会社東芝 | 半導体発光装置およびその製造方法 |
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US7067849B2 (en) * | 2001-07-17 | 2006-06-27 | Lg Electronics Inc. | Diode having high brightness and method thereof |
US6949395B2 (en) | 2001-10-22 | 2005-09-27 | Oriol, Inc. | Method of making diode having reflective layer |
US7148520B2 (en) | 2001-10-26 | 2006-12-12 | Lg Electronics Inc. | Diode having vertical structure and method of manufacturing the same |
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KR100862456B1 (ko) * | 2004-12-04 | 2008-10-08 | 삼성전기주식회사 | 투명 전극 및 이를 구비하는 화합물 반도체 발광소자 |
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WO2010113238A1 (ja) * | 2009-04-03 | 2010-10-07 | パナソニック株式会社 | 窒化物系半導体素子およびその製造方法 |
TWI593138B (zh) * | 2013-12-23 | 2017-07-21 | Nat Chunghsing Univ | Led |
US20160284957A1 (en) * | 2015-03-23 | 2016-09-29 | Toshiba Corporation | REFLECTIVE CONTACT FOR GaN-BASED LEDS |
US10361364B2 (en) * | 2017-06-14 | 2019-07-23 | International Business Machines Corporation | Co-fabrication of magnetic device structures with electrical interconnects having reduced resistance through increased conductor grain size |
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JP2006303430A (ja) * | 2005-04-15 | 2006-11-02 | Samsung Electro Mech Co Ltd | フリップチップ型の窒化物半導体発光素子 |
JP2011176378A (ja) * | 2005-04-15 | 2011-09-08 | Samsung Led Co Ltd | フリップチップ型の窒化物半導体発光素子 |
JP2006313888A (ja) * | 2005-05-03 | 2006-11-16 | Samsung Electro Mech Co Ltd | 窒化物系半導体発光素子及びその製造方法 |
JP2014519719A (ja) * | 2011-08-02 | 2014-08-14 | 株式会社東芝 | 半導体発光装置およびその製造方法 |
US9142743B2 (en) | 2011-08-02 | 2015-09-22 | Kabushiki Kaisha Toshiba | High temperature gold-free wafer bonding for light emitting diodes |
Also Published As
Publication number | Publication date |
---|---|
US7205576B2 (en) | 2007-04-17 |
US20050051783A1 (en) | 2005-03-10 |
KR100571816B1 (ko) | 2006-04-17 |
US20070254391A1 (en) | 2007-11-01 |
EP1513203A2 (en) | 2005-03-09 |
US7541207B2 (en) | 2009-06-02 |
KR20050025871A (ko) | 2005-03-14 |
CN1619853A (zh) | 2005-05-25 |
EP1513203A3 (en) | 2006-11-29 |
CN100474639C (zh) | 2009-04-01 |
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