JP2005079465A - 化学的機械研磨システムの支持ヘッド用メンブレン - Google Patents
化学的機械研磨システムの支持ヘッド用メンブレン Download PDFInfo
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- JP2005079465A JP2005079465A JP2003310418A JP2003310418A JP2005079465A JP 2005079465 A JP2005079465 A JP 2005079465A JP 2003310418 A JP2003310418 A JP 2003310418A JP 2003310418 A JP2003310418 A JP 2003310418A JP 2005079465 A JP2005079465 A JP 2005079465A
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- 239000012528 membrane Substances 0.000 title claims abstract description 82
- 238000005498 polishing Methods 0.000 title claims description 46
- 239000000126 substance Substances 0.000 title claims description 8
- 230000002579 anti-swelling effect Effects 0.000 claims description 2
- 238000005304 joining Methods 0.000 claims description 2
- 230000008961 swelling Effects 0.000 claims description 2
- 230000007257 malfunction Effects 0.000 abstract description 4
- 230000000630 rising effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 49
- 239000012530 fluid Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 6
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- 230000007246 mechanism Effects 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920001084 poly(chloroprene) Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229920002943 EPDM rubber Polymers 0.000 description 1
- 229920000181 Ethylene propylene rubber Polymers 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007809 chemical reaction catalyst Substances 0.000 description 1
- YACLQRRMGMJLJV-UHFFFAOYSA-N chloroprene Chemical compound ClC(=C)C=C YACLQRRMGMJLJV-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
【解決手段】 本発明は、メンブレン118の端部の突出部270をより嵌合性の良いものとすることである。具体的には、本発明に係るメンブレンは、円形の底部201と、前記円形底部の外縁から起立した壁部202と、前記壁部の上端より円の中心方向に延びる環状部203と、前記環状部の終端に位置する突出部270とを有し、前記突出部の断面は先端に直線部分272を有するU字型である。上記構成によって、支持プレート170に形成される溝262との嵌合性が向上するので、引張応力を受けても溝から外れにくくなり、装着不良により保持リング110に接触して生じる動作不良を回避できる。
【選択図】 図4
Description
Claims (6)
- 円形の底部と、
前記円形底部の外縁から起立した壁部と、
前記壁部の上端より円の中心方向に延びる環状部と、
前記環状部の終端に位置する突出部と、を有する可撓性のメンブレンであって、
前記突出部の断面は先端に直線部分を有するU字型である、化学的機械研磨システムの支持ヘッド用メンブレン。 - 前記突出部と嵌合する環状の溝を有する円盤状の支持プレートに装着される請求項1に記載のメンブレンであって、
前記壁部の内側から前記突出部までの長さが前記支持プレートの外周から溝までの長さより小さい、支持ヘッド用メンブレン。 - 円形の底部と、
前記円形底部の外縁から起立した壁部と、
前記壁部の上端より円の中心方向に延びる環状部と、
前記環状部の終端に位置する突出部と、を有する可撓性のメンブレンであって、
前記円形底部と前記壁部との接合部分は、円形底部が円の中心方向への引張応力を受けるときに下方へのふくらみを防止する形状を有する、化学的機械研磨システムの支持ヘッド用メンブレン。 - 前記ふくらみ防止形状はRである、請求項3に記載の支持ヘッド用メンブレン。
- 前記Rは、メンブレンの肉厚が前記接合部分以外の場所と同じ厚さとなるRである、請求項4に記載の支持ヘッド用メンブレン。
- 前記Rは、内側頂点を中心とするRである、請求項4に記載の支持ヘッド用メンブレン。
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JP2003310418A JP4378135B2 (ja) | 2003-09-02 | 2003-09-02 | 化学的機械研磨システムの支持ヘッド用メンブレン |
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JP2003310418A JP4378135B2 (ja) | 2003-09-02 | 2003-09-02 | 化学的機械研磨システムの支持ヘッド用メンブレン |
Publications (2)
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JP2005079465A true JP2005079465A (ja) | 2005-03-24 |
JP4378135B2 JP4378135B2 (ja) | 2009-12-02 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101609057B1 (ko) * | 2014-07-23 | 2016-04-05 | 주식회사 엠오에스 | Cmp 장치의 캐리어 헤드 멤브레인 및 이를 이용한 반도체 웨이퍼 연마장치 |
WO2017073318A1 (ja) * | 2015-10-30 | 2017-05-04 | 株式会社Sumco | ウェーハ研磨装置およびこれに用いる研磨ヘッド |
JP2021030410A (ja) * | 2019-08-29 | 2021-03-01 | 株式会社荏原製作所 | 弾性膜、および基板保持装置 |
-
2003
- 2003-09-02 JP JP2003310418A patent/JP4378135B2/ja not_active Expired - Lifetime
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101609057B1 (ko) * | 2014-07-23 | 2016-04-05 | 주식회사 엠오에스 | Cmp 장치의 캐리어 헤드 멤브레인 및 이를 이용한 반도체 웨이퍼 연마장치 |
WO2017073318A1 (ja) * | 2015-10-30 | 2017-05-04 | 株式会社Sumco | ウェーハ研磨装置およびこれに用いる研磨ヘッド |
JP2017085045A (ja) * | 2015-10-30 | 2017-05-18 | 株式会社Sumco | ウェーハ研磨装置およびこれに用いる研磨ヘッド |
TWI606889B (zh) * | 2015-10-30 | 2017-12-01 | Sumco股份有限公司 | 晶圓研磨裝置及用於該裝置的研磨頭 |
KR20180056742A (ko) | 2015-10-30 | 2018-05-29 | 가부시키가이샤 사무코 | 웨이퍼 연마 장치 및 이것에 이용하는 연마 헤드 |
DE112016004986T5 (de) | 2015-10-30 | 2018-07-12 | Sumco Corporation | Waferpoliervorrichtung und dafür verwendeter Polierkopf |
KR102024130B1 (ko) | 2015-10-30 | 2019-09-23 | 가부시키가이샤 사무코 | 웨이퍼 연마 장치 및 이것에 이용하는 연마 헤드 |
US10710209B2 (en) | 2015-10-30 | 2020-07-14 | Sumco Corporation | Wafer polishing apparatus and polishing head used for same |
DE112016004986B4 (de) | 2015-10-30 | 2023-06-22 | Sumco Corporation | Waferpoliervorrichtung und dafür verwendeter Polierkopf |
JP2021030410A (ja) * | 2019-08-29 | 2021-03-01 | 株式会社荏原製作所 | 弾性膜、および基板保持装置 |
JP7344048B2 (ja) | 2019-08-29 | 2023-09-13 | 株式会社荏原製作所 | 弾性膜、および基板保持装置 |
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