JP2005072297A - Plasma treatment method and equipment - Google Patents

Plasma treatment method and equipment Download PDF

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JP2005072297A
JP2005072297A JP2003300868A JP2003300868A JP2005072297A JP 2005072297 A JP2005072297 A JP 2005072297A JP 2003300868 A JP2003300868 A JP 2003300868A JP 2003300868 A JP2003300868 A JP 2003300868A JP 2005072297 A JP2005072297 A JP 2005072297A
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JP4134849B2 (en
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Mitsuhisa Saito
光央 斎藤
Tomohiro Okumura
智洋 奥村
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a plasma treatment method and equipment for realizing an etching rate substantially in the level of 150 μm/min and a line width in the level of 350 μm in a plate-like electrode of, for instance, 1 mm thick accurately processing a desired fine linear part at a high speed. <P>SOLUTION: A microplasma source comprises a ceramic-made outside plate 1, inside plates 2 and 3, and an outside plate 4. An outside gas jetting opening 6 is provided in the outside plates 1 and 4, and an inside gas jetting opening 8 is provided in the inside plates 2 and 3. High frequency electric power is charged to an opposite electrode 16 applying the high frequency electric power to generate plasma. On the way of plasma processing, a plasma generation region can be controlled into arbitrary size by changing a distance between the microplasma source and an object to be processed. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、プラズマを用いたプラズマ処理方法および装置に関するものである。   The present invention relates to a plasma processing method and apparatus using plasma.

一般に、表面に薄膜が形成された基板に代表される被処理物にパターンニング加工を行う場合、レジストプロセスが用いられる。その一例を図１４に示す。   In general, a resist process is used when patterning is performed on an object typified by a substrate having a thin film formed on the surface. An example is shown in FIG.

図１４において、まず、被処理物２２の表面に感光性レジスト２３を塗布する（図１４（ａ））。次に、露光機を用いて露光した後現像すると、レジスト２３が所望の形状にパターンニングできる（図１４（ｂ））。そして、被処理物２２を真空容器内に載置し、真空容器内にプラズマを発生させ、レジスト２３をマスクとして被処理物２２をエッチング加工すると、被処理物２２の表面が所望の形状にパターンニングされる（図１４（ｃ））。最後に、レジスト２３を酸素プラズマや有機溶剤などで除去することで、加工が完了する（図１４（ｄ））。   In FIG. 14, first, a photosensitive resist 23 is applied to the surface of the workpiece 22 (FIG. 14A). Next, the resist 23 can be patterned into a desired shape by developing after exposure using an exposure machine (FIG. 14B). Then, the workpiece 22 is placed in a vacuum vessel, plasma is generated in the vacuum vessel, and the workpiece 22 is etched using the resist 23 as a mask. The surface of the workpiece 22 is patterned into a desired shape. (FIG. 14C). Finally, the processing is completed by removing the resist 23 with oxygen plasma, an organic solvent, or the like (FIG. 14D).

以上のようなレジストプロセスは、微細パターンを精度良く形成するのに適しているため、半導体などの電子デバイスの製造において重要な役割を果たすに至った。しかしながら、工程が複雑であるという欠点がある。   Since the resist process as described above is suitable for accurately forming a fine pattern, it has played an important role in the manufacture of electronic devices such as semiconductors. However, there is a drawback that the process is complicated.

そこで、レジストプロセスを用いない、新しい加工方法が検討されている。その一例として、図１から図３に従来例で用いたマイクロプラズマ源を搭載したプラズマ処理装置の構成を示す。   Therefore, a new processing method that does not use a resist process is being studied. As an example, FIGS. 1 to 3 show the configuration of a plasma processing apparatus equipped with the microplasma source used in the conventional example.

図１に、マイクロプラズマ源の分解図を示す。マイクロプラズマ源は、セラミック製の外側板１、内側板２及び３、外側板４、板状電極５から成り、厚さは全て１ｍｍである。また、外側板１及び４には、外側ガス流路６及び外側ガス噴出口７が設けられ、内側板２及び３には、内側ガス流路８及び内側ガス噴出口９が設けられている。内側ガス噴出口９から噴出するガスの原料ガスは、外側板１に設けられた内側ガス供給口１０から、内側板２および板状電極５に設けられた貫通穴１１を介して、内側ガス流路８に導かれる。   FIG. 1 shows an exploded view of the microplasma source. The microplasma source is composed of a ceramic outer plate 1, inner plates 2 and 3, an outer plate 4, and a plate electrode 5, all having a thickness of 1 mm. The outer plates 1 and 4 are provided with an outer gas passage 6 and an outer gas outlet 7, and the inner plates 2 and 3 are provided with an inner gas passage 8 and an inner gas outlet 9. The raw material gas of the gas ejected from the inner gas outlet 9 flows from the inner gas supply port 10 provided in the outer plate 1 through the through hole 11 provided in the inner plate 2 and the plate electrode 5. It is led to the road 8.

また、外側ガス噴出口７から噴出するガスの原料ガスは、外側板１に設けられた外側ガス供給口１２から、内側板２と内側板３、および板状電極５に設けられた貫通穴１３を介して、外側ガス流路６に導かれる。なお、高周波電源が印加される板状電極５は、内側板２及び３の間に挿入され、引き出し部１４を介して電源部に配線される。   Further, the raw material gas of the gas ejected from the outer gas ejection port 7 passes from the outer gas supply port 12 provided in the outer plate 1 to the inner plate 2, the inner plate 3, and the through hole 13 provided in the plate electrode 5. Through the outer gas flow path 6. In addition, the plate-like electrode 5 to which the high frequency power is applied is inserted between the inner plates 2 and 3 and wired to the power supply part via the lead part 14.

図２に、マイクロプラズマ源を、ガス噴出口側から見た平面図を示す。   FIG. 2 shows a plan view of the microplasma source as viewed from the gas outlet side.

外側板１、内側板２及び３、外側板４、板状電極５が設けられ、外側板１と内側板２の間と、内側板３と外側板４の間に外側ガス噴出口７が設けられ、内側板２と板状電極５の間と、内側板３と板状電極５の間に内側ガス噴出口９が設けられている。なお、内側ガス噴出口９の線方向の長さｅは３０ｍｍ、外側ガス噴出口７の線方向の長さｆは内側ガス噴出口９の線方向の長さｅよりも大きく３６ｍｍである。また、板状電極５の線方向長さｇは３０ｍｍとした。   An outer plate 1, inner plates 2 and 3, an outer plate 4, and a plate-like electrode 5 are provided, and an outer gas outlet 7 is provided between the outer plate 1 and the inner plate 2 and between the inner plate 3 and the outer plate 4. The inner gas outlet 9 is provided between the inner plate 2 and the plate electrode 5 and between the inner plate 3 and the plate electrode 5. The length e in the linear direction of the inner gas outlet 9 is 30 mm, and the length f in the linear direction of the outer gas outlet 7 is 36 mm, which is larger than the length e in the linear direction of the inner gas outlet 9. Further, the length g in the line direction of the plate electrode 5 was set to 30 mm.

図３に、被処理物１５及びマイクロプラズマ源を、被処理物１５に垂直な面で切った断面を示す。   FIG. 3 shows a cross section of the workpiece 15 and the microplasma source taken along a plane perpendicular to the workpiece 15.

マイクロプラズマ源は、セラミック製の外側板１、内側板２及び３、外側板４、板状電極５から成り、外側板１及び４には外側ガス噴出口７が設けられ、内側板２及び３には内側ガス噴出口９が設けられている。また、板状電極５は接地電位とし、マイクロプラズマ源と対向となる位置には、高周波電力を印加させる対向電極１６を載置させている。なお、マイクロプラズマ源の開口部としての内側板２と板状電極５の間と、内側板３と板状電極５の間の内側ガス噴出口９がなす微細線の幅は０．０５ｍｍである。   The microplasma source includes a ceramic outer plate 1, inner plates 2 and 3, an outer plate 4, and a plate-like electrode 5. The outer plates 1 and 4 are provided with outer gas outlets 7, and the inner plates 2 and 3. Is provided with an inner gas outlet 9. The plate-like electrode 5 is set at a ground potential, and a counter electrode 16 for applying high-frequency power is placed at a position facing the microplasma source. In addition, the width | variety of the fine line which the inner side gas jet 9 between the inner side plate 2 and the plate-like electrode 5 as an opening part of a microplasma source and between the inner side plate 3 and the plate-like electrode 5 makes is 0.05 mm. .

このような構成のマイクロプラズマ源を搭載したプラズマ処理装置において、内側ガス噴出口からヘリウム（Ｈｅ）を、外側ガス噴出口から六フッ化硫黄（ＳＦ6）を供給しつつ、対向電極１６に高周波電力を印加することにより、被処理物１５の微小な線状部分をエッチング処理することができる。これは、ヘリウムと六フッ化硫黄の大気圧近傍の圧力下における放電しやすさの差（ヘリウムの方が格段に放電しやすい）を利用することで、ヘリウムが高濃度となる内側ガス噴出口９の近傍にのみマイクロプラズマを発生させることができるからである。 In the plasma processing apparatus equipped with the microplasma source having such a configuration, high frequency is supplied to the counter electrode 16 while helium (He) is supplied from the inner gas outlet and sulfur hexafluoride (SF 6 ) is supplied from the outer gas outlet. By applying electric power, a minute linear portion of the workpiece 15 can be etched. This is due to the difference in ease of discharge between helium and sulfur hexafluoride under atmospheric pressure (helium is much easier to discharge), so that the inner gas outlet has a high concentration of helium. This is because microplasma can be generated only in the vicinity of 9.

また、このような構成のマイクロプラズマ源を搭載したプラズマ処理装置において、鋭角部を有する板状電極を用いた線状加工について、特に被処理物としてＳｉを用いたものについては、例えば、未公開自社出願の特願２００２−２４８２４６号明細書に詳しく述べられている。   In addition, in a plasma processing apparatus equipped with a microplasma source having such a configuration, for example, linear processing using a plate-like electrode having an acute angle portion, particularly using Si as an object to be processed is not disclosed. This is described in detail in Japanese Patent Application No. 2002-248246 filed in-house.

また、大気圧グロープラズマに関する特徴は、特許文献１に述べられている。   Further, characteristics relating to atmospheric pressure glow plasma are described in Patent Document 1.

上記のプラズマ処理装置を用いて、例えば、ガスとして、ガス流路７にＨｅを１０００ｓｃｃｍ、ＳＦ6を４００ｓｃｃｍ供給し、高周波電力を１００Ｗ供給する条件にて、被処理物１５としてＳｉを３０ｓｅｃエッチングすることが可能である。
特開平５−２３５７９号公報 Using the above-described plasma processing apparatus, for example, as a gas, He is supplied to the gas flow path 7 at 1000 sccm, SF6 is supplied at 400 sccm, and high-frequency power is supplied at 100 W, and Si is etched as an object 15 for 30 seconds. Is possible.
JP-A-5-23579

しかしながら、従来例で述べたプラズマ処理方法および装置によるエッチングにおいては、プラズマ源の板状電極５の厚さを１ｍｍとした場合の線状加工において、線幅４３０μｍ〜５００μｍ程度、エッチングレート６７μｍ／ｍｉｎ〜１００μｍ／ｍｉｎが限界であるという問題点があった。得られたエッチングプロファイルを図４に示す。なお図４は、図２に示した線方向長さｇでの１５ｍｍの位置におけるエッチングプロファイルの断面図を示したものである。ここで、最も深くエッチングされた部分の深さをＤとしたとき、パターンの底からＤ×０．８だけ浅い部分の幅をＴｏｐの線幅Ｅと定義すると、Ｅは４３０μｍであり、エッチングレート６７μｍ／ｍｉｎであった。なお、パターンの底からＤ×０．２だけ浅い部分のＢｏｔｔｏｍの線幅Ｆは１５３μｍであった。   However, in the etching by the plasma processing method and apparatus described in the conventional example, in the linear processing when the thickness of the plate electrode 5 of the plasma source is 1 mm, the line width is about 430 μm to 500 μm, and the etching rate is 67 μm / min. There was a problem that -100 μm / min was the limit. The obtained etching profile is shown in FIG. FIG. 4 shows a cross-sectional view of the etching profile at a position of 15 mm in the linear direction length g shown in FIG. Here, when the depth of the deepest etched portion is D, if the width of the portion shallower by D × 0.8 from the bottom of the pattern is defined as the top line width E, E is 430 μm, and the etching rate It was 67 μm / min. The line width F of the bottom portion shallower by D × 0.2 from the bottom of the pattern was 153 μm.

本発明は、上記従来の問題点に鑑み、所望の微細線状部分を精度良く高速に加工できるプラズマ処理方法及び装置を提供することを目的としている。   In view of the above-described conventional problems, an object of the present invention is to provide a plasma processing method and apparatus capable of accurately processing a desired fine linear portion at high speed.

上記課題を解決するために、本願の第１発明のプラズマ処理方法は、ガス流路とガス噴出口と電位制御可能な電極を有するプラズマ源を被処理物近傍に載置させ、ガス流路にガスを供給しつつ、電位制御可能な電極に電力を投入させることでプラズマを発生させて、プラズマから発生する活性種およびガスをガス噴出口より被処理物に対して噴出させるプラズマ処理方法であって、被処理物に直接もしくは間接的に接触させた発熱器によって、被処理物を１００℃以上に加熱させつつプラズマ処理することを特徴とする。   In order to solve the above-described problem, the plasma processing method of the first invention of the present application is configured such that a plasma source having a gas flow path, a gas ejection port, and a potential-controllable electrode is placed in the vicinity of an object to be processed, This is a plasma processing method in which plasma is generated by supplying electric power to an electrode whose potential can be controlled while supplying a gas, and activated species and gas generated from the plasma are ejected from a gas outlet to a workpiece. Then, the plasma processing is performed while the processing object is heated to 100 ° C. or higher by a heat generator brought into direct or indirect contact with the processing object.

また、本願の第２発明のプラズマ処理方法は、ガス流路とガス噴出口と電位制御可能な電極を有するプラズマ源を被処理物近傍に載置させ、ガス流路にガスを供給しつつ、電位制御可能な電極を接地電位とし、プラズマ源と対向する位置に載置させた電位制御可能な対向電極、もしくは被処理物に電力を投入することでプラズマを発生させて、プラズマから発生する活性種およびガスをガス噴出口より被処理物に対して噴出させるプラズマ処理方法であって、被処理物に直接もしくは間接的に接触させた発熱器によって、被処理物を１００℃以上に加熱させつつプラズマ処理することを特徴とする。   Further, in the plasma processing method of the second invention of the present application, a plasma source having a gas flow path, a gas ejection port, and a potential-controllable electrode is placed in the vicinity of an object to be processed, and gas is supplied to the gas flow path. The potential controllable electrode placed at a position facing the plasma source, or the potential controllable electrode placed on the position facing the plasma source, or plasma generated by applying power to the object to be processed, and the activity generated from the plasma A plasma processing method in which seeds and gases are ejected from a gas outlet to an object to be processed, and the object to be processed is heated to 100 ° C. or higher by a heater that is in direct or indirect contact with the object to be processed. It is characterized by plasma processing.

また、本願の第３発明のプラズマ処理方法は、ガス流路とガス噴出口と電位制御可能な電極を有するプラズマ源を被処理物近傍に載置させ、ガス流路にガスを供給しつつ、電位制御可能な電極に電力を投入することでプラズマを発生させて、プラズマから発生する活性種およびガスをガス噴出口より被処理物に対して噴出させるプラズマ処理方法であって、プラズマ源の一部に直接もしくは間接的に発熱器を接触させ、プラズマ源から発生する輻射熱により、被処理物を１００℃以上に加熱させつつプラズマ処理することを特徴とする。   In the plasma processing method of the third invention of the present application, a plasma source having a gas flow path, a gas ejection port, and a potential-controllable electrode is placed in the vicinity of the object to be processed, and gas is supplied to the gas flow path. A plasma processing method for generating plasma by applying electric power to an electrode whose potential can be controlled, and ejecting active species and gas generated from the plasma to an object to be processed from a gas outlet. A heating device is brought into contact with the part directly or indirectly, and plasma processing is performed while heating the object to be processed to 100 ° C. or more by radiant heat generated from a plasma source.

また、本願の第４発明のプラズマ処理方法は、ガス流路とガス噴出口と電位制御可能な電極を有するプラズマ源を被処理物近傍に載置させ、ガス流路にガスを供給しつつ、電位制御可能な電極を接地電位とし、プラズマ源と対向する位置に載置させた電位制御可能な対向電極、もしくは被処理物に電力を投入することでプラズマを発生させて、プラズマから発生する活性種およびガスをガス噴出口より被処理物に対して噴出させるプラズマ処理方法であって、プラズマ源の一部に直接もしくは間接的に発熱器を接触させ、プラズマ源から発生する輻射熱により、被処理物を１００℃以上に加熱させつつプラズマ処理することを特徴とする。   Further, in the plasma processing method of the fourth invention of the present application, a plasma source having a gas flow path, a gas ejection port, and a potential-controllable electrode is placed in the vicinity of an object to be processed, and gas is supplied to the gas flow path. The potential controllable electrode placed at a position facing the plasma source, or the potential controllable electrode placed on the position facing the plasma source, or plasma generated by applying power to the object to be processed, and the activity generated from the plasma A plasma processing method in which seeds and gas are ejected from a gas outlet to an object to be processed, where a heat generator is brought into contact with a part of the plasma source directly or indirectly, and the object is processed by radiant heat generated from the plasma source. Plasma treatment is performed while heating an object to 100 ° C. or higher.

このとき、本願の第１乃至第４発明のプラズマ処理方法において、好適には、ガス噴出口、対向電極もしくはプラズマ源に載置させた電極が、線状もしくは長方形を為し、被処理物に対して線状にプラズマ処理することが望ましい。   At this time, in the plasma processing methods of the first to fourth inventions of the present application, preferably, the gas ejection port, the counter electrode, or the electrode placed on the plasma source has a linear or rectangular shape, and is to be processed. On the other hand, it is desirable to perform a plasma treatment in a linear form.

また、本願の第１乃至第４発明のプラズマ処理方法において、好適には、ガス流路およびガス噴出口が２系統あり、第１のガス噴出口が第２のガス噴出口より内側に位置し、第１のガス噴出口から不活性ガスを含むガスおよび活性種を噴出しつつ、第２のガス噴出口から反応性ガスを含むガスおよび活性種を噴出することが望ましい。   In the plasma processing methods of the first to fourth inventions of the present application, preferably, there are two systems of gas flow paths and gas outlets, and the first gas outlet is located inside the second gas outlet. It is desirable to eject the gas containing reactive gas and the active species from the second gas jet outlet while jetting the gas containing inert gas and the active species from the first gas jet outlet.

また、好適には、前記不活性ガスは、Ｈｅ、Ａｒ、Ｎｅ、Ｘｅのいずれかであることが望ましい。   Preferably, the inert gas is any one of He, Ar, Ne, and Xe.

さらに、好適には、前記反応性ガスは、ＳＦ6、ＣＦ4などのＣｘＦｙ（ｘ及びｙは自然数）、ＮＦ3、O2、Ｃｌ2、ＨＢｒ等のハロゲン含有ガスを少なくとも１種類以上含むことが望ましい。 Further preferably, the reactive gas contains at least one kind of halogen-containing gas such as CxFy (x and y are natural numbers) such as SF 6 and CF 4 , NF 3 , O 2 , Cl 2 , and HBr. Is desirable.

本願の第１乃至第４発明のプラズマ処理方法において、好適には、被処理物の有する融点の２／３以下の温度に被処理物を加熱することが望ましい。   In the plasma processing methods of the first to fourth inventions of the present application, it is preferable that the object to be processed is heated to a temperature not higher than 2/3 of the melting point of the object to be processed.

本願の第１乃至第４発明のプラズマ処理方法において、好適には、被処理物は、体積抵抗率が１０8（Ω・ｃｍ）以下である基板もしくは薄膜を有することが望ましい。 In the plasma processing methods of the first to fourth inventions of the present application, it is preferable that the object to be processed has a substrate or a thin film having a volume resistivity of 10 8 (Ω · cm) or less.

本願の第１乃至第４発明のプラズマ処理方法において、好適には、被処理物は、体積抵抗率が１０-6（Ω・ｃｍ）以下である基板もしくは薄膜を有することが望ましい。 In the plasma processing methods of the first to fourth inventions of the present application, it is preferable that the object to be processed has a substrate or a thin film having a volume resistivity of 10 −6 (Ω · cm) or less.

本願の第１乃至第４発明のプラズマ処理方法において、好適には、大気圧近傍の圧力において処理することが望ましい。   In the plasma processing methods of the first to fourth inventions of the present application, it is preferable to perform processing at a pressure close to atmospheric pressure.

本願の第１乃至第４発明のプラズマ処理方法において、好適には、発熱器、もしくは輻射熱により被処理物を加熱させる温度が３００℃以上であることが望ましい。   In the plasma processing methods of the first to fourth inventions of the present application, it is preferable that the temperature at which the workpiece is heated by a heat generator or radiant heat is 300 ° C. or higher.

また、本願の第５発明のプラズマ処理装置は、ガス流路と、ガス流路を経由して大気中にガスを噴出させることが可能なガス噴出口と、電位制御可能な電極を有するプラズマ処理装置であって、被処理物に直接もしくは間接的に接触させることが可能な位置に、１００℃以上の発熱能力を有する発熱器を備えたことを特徴とする。   Further, the plasma processing apparatus of the fifth invention of the present application is a plasma processing having a gas flow channel, a gas jet port capable of jetting gas into the atmosphere via the gas flow channel, and a potential controllable electrode. The apparatus is characterized in that a heater having a heat generation capability of 100 ° C. or higher is provided at a position where the apparatus can be directly or indirectly brought into contact with an object to be processed.

また、本願の第６発明のプラズマ処理装置は、ガス流路と、ガス流路を経由して大気中にガスを噴出させることが可能なガス噴出口と、電位制御可能な電極を有するプラズマ源を備え、プラズマ源と対向となる位置に電位制御可能な対向電極を備えたプラズマ処理装置であって、被処理物に直接もしくは間接的に接触させることが可能な位置に、１００℃以上の発熱能力を有する発熱器を備えたことを特徴とする。   The plasma processing apparatus according to the sixth invention of the present application is a plasma source having a gas flow path, a gas jet port capable of jetting gas into the atmosphere via the gas flow path, and a potential controllable electrode. A plasma processing apparatus having a counter electrode capable of controlling the potential at a position facing the plasma source, and generating heat of 100 ° C. or more at a position where it can be directly or indirectly brought into contact with an object to be processed It is characterized by having a heat generator having capacity.

また、本願の第７発明のプラズマ処理装置は、ガス流路と、ガス流路を経由して大気中にガスを噴出させることが可能なガス噴出口と、電位制御可能な電極を有するプラズマ処理装置であって、プラズマ源の一部に直接もしくは間接的に接触させることが可能な位置に、１００℃以上の発熱能力を有する発熱器を備えたことを特徴とする。   Further, the plasma processing apparatus of the seventh invention of the present application is a plasma processing having a gas flow channel, a gas jet port capable of jetting gas into the atmosphere via the gas flow channel, and a potential controllable electrode. The apparatus is characterized in that a heater having a heat generation capability of 100 ° C. or higher is provided at a position where it can be directly or indirectly brought into contact with a part of the plasma source.

更に、本願の第８発明のプラズマ処理装置は、ガス流路と、ガス流路を経由して大気中にガスを噴出させることが可能なガス噴出口と、電位制御可能な電極を有するプラズマ源を備え、プラズマ源と対向となる位置に電位制御可能な対向電極を備えたプラズマ処理装置であって、プラズマ源の一部に直接もしくは間接的に接触させることが可能な位置に、１００℃以上の発熱能力を有する発熱器を備えることを特徴とする。   Further, the plasma processing apparatus of the eighth invention of the present application is a plasma source having a gas flow channel, a gas jet port capable of jetting gas into the atmosphere via the gas flow channel, and a potential controllable electrode. A plasma processing apparatus having a counter electrode capable of controlling the potential at a position facing the plasma source, at a position where it can be directly or indirectly brought into contact with a part of the plasma source at 100 ° C. or higher It is characterized by including a heat generator having a heat generation capacity of

このとき、本願の第５乃至第８発明のプラズマ処理装置において、好適には、ガス噴出口、対向電極もしくはプラズマ源に載置させた電極が、線状もしくは長方形を為すことが望ましい。   At this time, in the plasma processing apparatuses according to the fifth to eighth inventions of the present application, it is preferable that the gas ejection port, the counter electrode, or the electrode placed on the plasma source has a linear or rectangular shape.

更に、本願の第５乃至第８発明のプラズマ処理装置において、好適には、ガス流路およびガス噴出口が２系統あり、第１のガス噴出口が第２のガス噴出口より内側に位置することが望ましい。   Furthermore, in the plasma processing apparatuses according to the fifth to eighth inventions of the present application, preferably, there are two systems of gas flow paths and gas outlets, and the first gas outlet is located inside the second gas outlet. It is desirable.

以上のように、本願の第１発明のプラズマ処理方法によれば、大気圧近傍の圧力において、ガス流路とガス噴出口と電位制御可能な電極を有するプラズマ源を被処理物近傍に載置させ、ガス流路にガスを供給しつつ、電位制御可能な電極に電力を投入させることでプラズマを発生させて、プラズマから発生する活性種およびガスをガス噴出口より被処理物に対して噴出させるプラズマ処理方法であって、被処理物に直接もしくは間接的に接触させた発熱器によって、被処理物を１００℃以上に加熱させつつプラズマ処理することにより、所望の微細線状部分を精度良く高速に加工できるプラズマ処理方法及び装置を提供することができる。   As described above, according to the plasma processing method of the first invention of the present application, a plasma source having a gas flow path, a gas jet port, and a potential-controllable electrode is placed in the vicinity of an object to be processed at a pressure near atmospheric pressure. The plasma is generated by supplying power to the potential controllable electrode while supplying the gas to the gas flow path, and the active species and gas generated from the plasma are ejected from the gas outlet to the object to be processed. A plasma processing method is performed, and a desired fine line-shaped portion is accurately obtained by performing plasma processing while heating the object to be processed to 100 ° C. or higher by a heater that is directly or indirectly brought into contact with the object to be processed. A plasma processing method and apparatus capable of processing at high speed can be provided.

また、本願の第２発明のプラズマ処理方法によれば、大気圧近傍の圧力において、ガス流路とガス噴出口と電位制御可能な電極を有するプラズマ源を被処理物近傍に載置させ、ガス流路にガスを供給しつつ、電位制御可能な電極を接地電位とし、プラズマ源と対向する位置に載置させた電位制御可能な対向電極、もしくは被処理物に電力を投入することでプラズマを発生させて、プラズマから発生する活性種およびガスをガス噴出口より被処理物に対して噴出させるプラズマ処理方法であって、被処理物に直接もしくは間接的に接触させた発熱器によって、被処理物を１００℃以上に加熱させつつプラズマ処理することにより、所望の微細線状部分を精度良く高速に加工する、例えば厚さ１ｍｍの板状電極において、線幅３５０μｍ程度、エッチングレート１５０μｍ／ｍｉｎ程度を実現するプラズマ処理方法及び装置を提供することができる。   Further, according to the plasma processing method of the second invention of the present application, a plasma source having a gas flow path, a gas outlet, and a potential controllable electrode is placed in the vicinity of an object to be processed at a pressure near atmospheric pressure, While supplying gas to the flow channel, the potential controllable electrode is set to the ground potential, and the plasma is generated by supplying power to the potential controllable counter electrode placed at a position facing the plasma source or the object to be processed. A plasma processing method in which activated species and gas generated from plasma are jetted from a gas outlet to a workpiece, and the workpiece is treated by a heater that is in direct or indirect contact with the workpiece. For example, in a plate electrode having a thickness of 1 mm, a line width of about 350 μm can be obtained by processing a desired fine linear portion with high accuracy by performing a plasma treatment while heating the object to 100 ° C. or higher. It is possible to provide a plasma processing method and apparatus for implementing about Chin Great 150 [mu] m / min.

また、本願の第３発明のプラズマ処理方法によれば、大気圧近傍の圧力において、ガス流路とガス噴出口と電位制御可能な電極を有するプラズマ源を被処理物近傍に載置させ、ガス流路にガスを供給しつつ、電位制御可能な電極に電力を投入することでプラズマを発生させて、プラズマから発生する活性種およびガスをガス噴出口より被処理物に対して噴出させるプラズマ処理方法であって、プラズマ源の一部に直接もしくは間接的に発熱器を接触させ、プラズマ源から発生する輻射熱により、被処理物を１００℃以上に加熱させつつプラズマ処理することにより、所望の微細線状部分を精度良く高速に加工する、例えば厚さ１ｍｍの板状電極において、線幅３５０μｍ程度、エッチングレート１５０μｍ／ｍｉｎ程度を実現するプラズマ処理方法及び装置を提供することができる。   Further, according to the plasma processing method of the third invention of the present application, a plasma source having a gas flow path, a gas ejection port, and a potential-controllable electrode is placed in the vicinity of an object to be processed at a pressure near atmospheric pressure, Plasma treatment in which plasma is generated by supplying power to a potential-controllable electrode while supplying gas to the flow path, and activated species and gas generated from the plasma are ejected from the gas outlet to the workpiece. A method in which a heat generator is brought into contact with a part of a plasma source directly or indirectly, and the object to be processed is subjected to plasma treatment while being heated to 100 ° C. or more by radiant heat generated from the plasma source. Plasma processing for processing a linear portion with high accuracy at high speed, for example, a plate electrode having a thickness of 1 mm, realizing a line width of about 350 μm and an etching rate of about 150 μm / min Methods and apparatus can be provided.

また、本願の第４発明のプラズマ処理方法によれば、大気圧近傍の圧力において、ガス流路とガス噴出口と電位制御可能な電極を有するプラズマ源を被処理物近傍に載置させ、ガス流路にガスを供給しつつ、電位制御可能な電極を接地電位とし、プラズマ源と対向する位置に載置させた電位制御可能な対向電極、もしくは被処理物に電力を投入することでプラズマを発生させて、プラズマから発生する活性種およびガスをガス噴出口より被処理物に対して噴出させるプラズマ処理方法であって、プラズマ源の一部に直接もしくは間接的に発熱器を接触させ、プラズマ源から発生する輻射熱により、被処理物を１００℃以上に加熱させつつプラズマ処理することにより、所望の微細線状部分を精度良く高速に加工する、例えば厚さ１ｍｍの板状電極において、線幅３５０μｍ程度、エッチングレート１５０μｍ／ｍｉｎ程度を実現するプラズマ処理方法及び装置を提供することができる。   Further, according to the plasma processing method of the fourth invention of the present application, a plasma source having a gas flow path, a gas outlet, and an electrode whose potential can be controlled is placed in the vicinity of an object to be processed at a pressure near atmospheric pressure, While supplying gas to the flow channel, the potential controllable electrode is set to the ground potential, and the plasma is generated by supplying power to the potential controllable counter electrode placed at a position facing the plasma source or the object to be processed. A plasma processing method in which activated species and gas generated from plasma are ejected from a gas ejection port to an object to be treated, wherein a heat generator is brought into contact with a part of the plasma source directly or indirectly, and the plasma By processing the object to be processed at 100 ° C. or higher by radiant heat generated from the source, a desired fine linear portion is processed at high speed with high accuracy. For example, a plate having a thickness of 1 mm In extreme, it is possible to provide a plasma processing method and apparatus for implementing about line width 350 .mu.m, the order of the etching rate 150 [mu] m / min.

また、本願の第５発明のプラズマ処理装置によれば、ガス流路と、ガス流路を経由して大気中にガスを噴出させることが可能なガス噴出口と、電位制御可能な電極を有するプラズマ源であって、被処理物に直接もしくは間接的に接触させることが可能な位置に、１００℃以上の発熱能力を有する発熱器を備えたことにより、所望の微細線状部分を精度良く高速に加工する、例えば厚さ１ｍｍの板状電極において、線幅３５０μｍ程度、エッチングレート１５０μｍ／ｍｉｎ程度を実現するプラズマ処理方法及び装置を提供することができる。   In addition, according to the plasma processing apparatus of the fifth invention of the present application, the gas flow path, the gas ejection port capable of ejecting the gas into the atmosphere via the gas flow path, and the potential controllable electrode are provided. By providing a heat source with a heat generation capability of 100 ° C. or higher at a position where the plasma source can be directly or indirectly brought into contact with the object to be processed, a desired fine linear portion can be accurately and quickly For example, it is possible to provide a plasma processing method and apparatus that achieves a line width of about 350 μm and an etching rate of about 150 μm / min in a plate-like electrode having a thickness of 1 mm, for example.

また、本願の第６発明のプラズマ処理装置によれば、ガス流路と、ガス流路を経由して大気中にガスを噴出させることが可能なガス噴出口と、電位制御可能な電極を有するプラズマ源を備え、プラズマ源と対向となる位置に電位制御可能な対向電極を備えたプラズマ処理装置であって、被処理物に直接もしくは間接的に接触させることが可能な位置に、１００℃以上の発熱能力を有する発熱器を備えたことにより、所望の微細線状部分を精度良く高速に加工する、例えば厚さ１ｍｍの板状電極において、線幅３５０μｍ程度、エッチングレート１５０μｍ／ｍｉｎ程度を実現するプラズマ処理方法及び装置を提供することができる。   In addition, according to the plasma processing apparatus of the sixth invention of the present application, the gas flow path, the gas ejection port capable of ejecting gas into the atmosphere via the gas flow path, and the potential controllable electrode are provided. A plasma processing apparatus having a plasma source and a counter electrode capable of controlling the potential at a position facing the plasma source, at a position where the object can be directly or indirectly brought into contact with an object to be processed at 100 ° C. or higher By providing a heat generator with the heat generation capability, a desired fine line-shaped portion can be processed with high accuracy and high speed. For example, a plate electrode with a thickness of 1 mm achieves a line width of about 350 μm and an etching rate of about 150 μm / min. It is possible to provide a plasma processing method and apparatus.

また、本願の第７発明のプラズマ処理装置によれば、ガス流路と、ガス流路を経由して大気中にガスを噴出させることが可能なガス噴出口と、電位制御可能な電極を有するプラズマ源であって、プラズマ源の一部に直接もしくは間接的に接触させることが可能な位置に、１００℃以上の発熱能力を有する発熱器を備えたことにより、所望の微細線状部分を精度良く高速に加工する、例えば厚さ１ｍｍの板状電極において、線幅３５０μｍ程度、エッチングレート１５０μｍ／ｍｉｎ程度を実現するプラズマ処理方法及び装置を提供することができる。   In addition, according to the plasma processing apparatus of the seventh invention of the present application, the gas flow path, the gas jet port capable of jetting gas into the atmosphere via the gas flow path, and the potential controllable electrode are provided. By providing a heat source with a heat generation capability of 100 ° C. or higher at a position where the plasma source can be directly or indirectly brought into contact with a part of the plasma source, the desired fine linear portion can be accurately obtained. It is possible to provide a plasma processing method and apparatus that realizes a line width of about 350 μm and an etching rate of about 150 μm / min in a plate electrode having a thickness of 1 mm, for example, which is well processed at high speed.

また、本願の第８発明のプラズマ処理装置によれば、ガス流路と、ガス流路を経由して大気中にガスを噴出させることが可能なガス噴出口と、電位制御可能な電極を有するプラズマ源を備え、プラズマ源と対向となる位置に電位制御可能な対向電極を備えたプラズマ処理装置であって、プラズマ源の一部に直接もしくは間接的に接触させることが可能な位置に、１００℃以上の発熱能力を有する発熱器を備えたことにより、所望の微細線状部分を精度良く高速に加工する、例えば厚さ１ｍｍの板状電極において、線幅３５０μｍ程度、エッチングレート１５０μｍ／ｍｉｎ程度を実現するプラズマ処理方法及び装置を提供することができる。   Moreover, according to the plasma processing apparatus of the eighth invention of the present application, the gas flow path, the gas jet port capable of jetting gas into the atmosphere via the gas flow path, and the potential controllable electrode are provided. A plasma processing apparatus including a plasma source and having a counter electrode capable of controlling a potential at a position facing the plasma source, wherein the plasma processing apparatus can be directly or indirectly brought into contact with a part of the plasma source. By providing a heat generator having a heat generation capability of ℃ or higher, a desired fine linear portion is processed at high speed with high precision. For example, in a plate electrode having a thickness of 1 mm, a line width of about 350 μm and an etching rate of about 150 μm / min A plasma processing method and apparatus for realizing the above can be provided.

（実施の形態１）
以下、本発明の第１実施形態について、図１から図９を参照して説明する。なお、図１から図３に示すマイクロプラズマ源の基本的な構成及び動作については従来例で説明したので、ここでは詳細は省略する。 (Embodiment 1)
Hereinafter, a first embodiment of the present invention will be described with reference to FIGS. Since the basic configuration and operation of the microplasma source shown in FIGS. 1 to 3 have been described in the conventional example, the details are omitted here.

マイクロプラズマ源は数Ｐａから数気圧まで動作可能であるが、典型的には１００００Ｐａから３気圧程度の範囲の圧力で動作する。特に大気圧付近での動作は、厳重な密閉構造や特別な排気装置が不要であるとともに、プラズマや活性粒子の拡散が適度に抑制されるため、とくに好ましい。   The microplasma source can operate from several Pa to several atmospheres, but typically operates at a pressure in the range of about 10,000 Pa to 3 atmospheres. In particular, operation near atmospheric pressure is particularly preferable because a strict airtight structure and a special exhaust device are unnecessary, and diffusion of plasma and active particles is moderately suppressed.

ここで図５に示すように、内側ガス流路８を介して内側ガス噴出口９から不活性ガスとしてのＨｅを１０００ｓｃｃｍ、外側ガス流路６を介して外側ガス噴出口７から反応性ガスとしてのＳＦ6を４００ｓｃｃｍ供給しつつ、板状電極５を接地電位とし、対向電極１６に高周波電源１７より１３．５６ＭＨｚの高周波電力を１００Ｗの大きさで印加することによりマイクロプラズマ１８を発生させ、生成された活性粒子としてのヘリウムイオンとフッ素ラジカルを被処理物１５としてのＳｉに照射した。また同時に、対向電極１６に対し厚さ１ｍｍのガラス板１９を介して発熱器２０を接触させ、被処理物表面の温度を１００℃、２００℃、３００℃、３３０℃、３６０℃に変化させた。そして、このような処理条件の各温度において、被処理物１５としてのＳｉに３０秒間エッチング処理を実施した。なお、ガラス板１９は、対向電極１６と発熱器２０間を絶縁するものである。またこの時、プラズマ源と被処理物１５間の距離は０．３ｍｍとした。 Here, as shown in FIG. 5, He is 1000 sccm as an inert gas from the inner gas outlet 9 through the inner gas flow path 8, and as a reactive gas from the outer gas outlet 7 through the outer gas flow path 6. The micro plasma 18 is generated by applying a high frequency power of 13.56 MHz from the high frequency power source 17 to the counter electrode 16 with a magnitude of 100 W while supplying 400 sccm of SF 6 at a ground potential. Helium ions and fluorine radicals as active particles thus irradiated were irradiated to Si as the object 15 to be processed. At the same time, the heater 20 was brought into contact with the counter electrode 16 through a glass plate 19 having a thickness of 1 mm, and the temperature of the surface of the object to be processed was changed to 100 ° C., 200 ° C., 300 ° C., 330 ° C., 360 ° C. . Then, at each temperature under such processing conditions, the Si as the workpiece 15 was etched for 30 seconds. The glass plate 19 insulates between the counter electrode 16 and the heat generator 20. At this time, the distance between the plasma source and the workpiece 15 was set to 0.3 mm.

図６から図８は順に、Ｓｉのエッチングレート、Ｔｏｐの線幅Ｅ、Ｂｏｔｔｏｍの線幅Ｆを温度変化に対してプロットしたものを示す。なお、Ｔｏｐの線幅ＥとＢｏｔｔｏｍの線幅Ｆは図４で定義した通りである。また各点の値は、エッチングにより得られた線方向の加工長さ約３０ｍｍを、接触式段差計を用いて５ｍｍ間隔で７点測定して平均値を算出した値である。これらの図より、温度を高くするにつれてエッチングレートが向上し、Ｔｏｐの線幅が細線化した。この時、３６０℃の温度にてエッチングレート１６１μｍ／ｍｉｎ、Ｔｏｐの線幅３４９μｍであった。   FIGS. 6 to 8 show, in order, plots of the Si etching rate, the Top line width E, and the Bottom line width F against temperature changes. The line width E of Top and the line width F of Bottom are as defined in FIG. Further, the value of each point is a value obtained by measuring an average processing length of about 30 mm in a line direction obtained by etching at 7 points at intervals of 5 mm using a contact-type step gauge. From these figures, the etching rate was improved as the temperature was increased, and the top line width was narrowed. At this time, the etching rate was 161 μm / min at a temperature of 360 ° C., and the top line width was 349 μm.

このように、被処理物の温度が高くなるとエッチングレートが大きくなる理由として、活性種と被処理物の化学反応が促進される、または再付着する反応性生物の揮発が促進されることが考えられる。次に、温度が高くなるにつれて、Ｂｏｔｔｏｍの線幅がほとんど変化せずにＴｏｐの線幅が細線化する理由として、Ｓｉの表面における自然酸化膜の形成の有無が、１つの原因であると推測できる。この推測を、図９に示した模式図を用いて説明する。図９は板状電極５と、ある深さまでエッチングを進行させた際の被処理物１５として用いたＳｉのエッチング形状を示している。この図のように、エッチング中は、板状電極５の先端部Ｇ部とＩ点間の強電界により放電が発生しエッチングが進行するが、同時にこの系の中で比較的距離の小さい先端部Ｇ部とＨ点間でも放電が発生しやすい。この時、被処理物であるＳｉが室温に近い温度であれば、Ｓｉの表面に充分な自然酸化膜が形成されないため、板状電極５の先端部Ｇ部とＩ点間のエッチングの進行とともに、Ｈ点付近でのエッチングも進行する。しかしＳｉの温度が高くなると、例えばＳｉの自然酸化膜が形成されやすいＨ点近傍でのエッチングレートが低下するが、自然酸化膜が形成されにくいＩ点近傍ではエッチングが進行することが推測できる。なお、自然酸化膜の形成速度の違いは、大気中からプラズマ中に僅かに混入した酸素分子が解離して発生する酸素ラジカルに起因するものと考えられる。従って図中では、Ｊ近傍、Ｈ近傍、Ｉ近傍の順に大気から混入する酸素濃度が高く、酸化されやすいことが予想できる。このため、Ｓｉが高温になるにつれてＴｏｐの線幅が細線化すると考えられる。   As described above, the reason why the etching rate increases as the temperature of the object to be treated increases is that the chemical reaction between the active species and the object to be treated is promoted, or the volatilization of the reactive organism that reattaches is promoted. It is done. Next, as the temperature rises, the bottom line width hardly changes as the bottom line width changes, and the reason why the top line width is thinned is probably due to the presence or absence of the formation of a natural oxide film on the Si surface. it can. This estimation will be described with reference to the schematic diagram shown in FIG. FIG. 9 shows the plate-like electrode 5 and the etching shape of Si used as the object to be processed 15 when the etching is advanced to a certain depth. As shown in this figure, during etching, a discharge is generated due to a strong electric field between the tip portion G and the point I of the plate electrode 5 and etching proceeds, but at the same time, the tip portion having a relatively small distance in this system. Discharge is likely to occur between the G part and the H point. At this time, if Si to be processed is at a temperature close to room temperature, a sufficient natural oxide film is not formed on the surface of Si, so that the etching between the tip G portion and the I point of the plate electrode 5 progresses. Etching near the H point also proceeds. However, when the temperature of Si increases, for example, the etching rate near the H point where a natural oxide film of Si is likely to be formed decreases, but it can be estimated that the etching proceeds near the I point where the natural oxide film is difficult to form. The difference in the formation rate of the natural oxide film is considered to be caused by oxygen radicals generated by dissociating oxygen molecules slightly mixed in the plasma from the atmosphere. Therefore, in the figure, it can be expected that the oxygen concentration mixed in from the atmosphere increases in the order of J, H, and I, and is easily oxidized. For this reason, it is thought that the line width of Top becomes thinner as the temperature of Si becomes higher.

（実施の形態２）
次に、本発明の第２実施形態について、図１から図４と、図９から図１３を参照して説明する。なお、図１から図３に示すマイクロプラズマ源の基本的な構成及び動作については従来例で説明したので、ここでは詳細は省略する。 (Embodiment 2)
Next, a second embodiment of the present invention will be described with reference to FIGS. 1 to 4 and FIGS. 9 to 13. Since the basic configuration and operation of the microplasma source shown in FIGS. 1 to 3 have been described in the conventional example, the details are omitted here.

マイクロプラズマ源は数Ｐａから数気圧まで動作可能であるが、典型的には１００００Ｐａから３気圧程度の範囲の圧力で動作する。特に、大気圧付近での動作は、厳重な密閉構造や特別な排気装置が不要であるとともに、プラズマや活性粒子の拡散が適度に抑制されるため、とくに好ましい。   The microplasma source can operate from several Pa to several atmospheres, but typically operates at a pressure in the range of about 10,000 Pa to 3 atmospheres. In particular, operation near atmospheric pressure is particularly preferable because a strict sealing structure and a special exhaust device are not required, and diffusion of plasma and active particles is moderately suppressed.

ここで図１０に示すように、内側ガス流路８を介して内側ガス噴出口９から不活性ガスとしてのＨｅを１０００ｓｃｃｍ、外側ガス流路６を介して外側ガス噴出口７から反応性ガスとしてのＳＦ6を４００ｓｃｃｍ供給しつつ、板状電極５を接地電位とし、対向電極１６に高周波電源１７より１３．５６ＭＨｚの高周波電力を１００Ｗの大きさで印加することによりマイクロプラズマ１８を発生させ、生成された活性粒子としてのヘリウムイオンとフッ素ラジカルを被処理物１５としてのＳｉに照射した。また同時に、板状電極５に対し厚さ１ｍｍのガラス板１９を介して発熱器２０を接触させ、板状電極５からの輻射熱により、被処理物表面のプラズマ処理領域２１近傍に位置する線幅１ｍｍの範囲の温度を１００℃、２００℃、３００℃、３３０℃、３６０℃に変化させた。そして、このような処理条件の各温度において、被処理物１５としてのＳｉに３０秒間エッチング処理を実施した。なお、ガラス板１９は、板状電極５と発熱器２０間を絶縁するものである。またこの時、プラズマ源と被処理物１５間の距離は０．３ｍｍとした。 Here, as shown in FIG. 10, He is 1000 sccm as an inert gas from the inner gas outlet 9 through the inner gas flow path 8, and as a reactive gas from the outer gas outlet 7 through the outer gas flow path 6. The micro plasma 18 is generated by applying a high frequency power of 13.56 MHz from the high frequency power source 17 to the counter electrode 16 with a magnitude of 100 W while supplying 400 sccm of SF 6 at a ground potential. Helium ions and fluorine radicals as active particles thus irradiated were irradiated to Si as the object 15 to be processed. At the same time, a heater 20 is brought into contact with the plate-like electrode 5 through a glass plate 19 having a thickness of 1 mm, and the line width located in the vicinity of the plasma treatment region 21 on the surface of the workpiece by radiant heat from the plate-like electrode 5. The temperature in the range of 1 mm was changed to 100 ° C, 200 ° C, 300 ° C, 330 ° C, 360 ° C. Then, at each temperature under such processing conditions, the Si as the workpiece 15 was etched for 30 seconds. The glass plate 19 insulates between the plate electrode 5 and the heat generator 20. At this time, the distance between the plasma source and the workpiece 15 was set to 0.3 mm.

図１１から図１３は順に、Ｓｉのエッチングレート、Ｔｏｐの線幅Ｅ、Ｂｏｔｔｏｍの線幅Ｆを温度変化に対してプロットしたものを示す。なお、Ｔｏｐの線幅ＥとＢｏｔｔｏｍの線幅Ｆは図４で定義した通りである。また各点の値は、エッチングにより得られた線方向の加工長さ約３０ｍｍを、接触式段差計を用いて５ｍｍ間隔で７点測定して平均値を算出した値である。これらの図より、温度を高くするにつれてエッチングレートが向上し、Ｔｏｐの線幅が細線化した。この時、３６０℃の温度にてエッチングレート１４９μｍ／ｍｉｎ、Ｔｏｐの線幅３４０μｍであった。   FIGS. 11 to 13 sequentially show Si etching rate, Top line width E, and Bottom line width F plotted against temperature changes. The line width E of Top and the line width F of Bottom are as defined in FIG. Further, the value of each point is a value obtained by measuring an average processing length of about 30 mm in a line direction obtained by etching at 7 points at intervals of 5 mm using a contact-type step gauge. From these figures, the etching rate was improved as the temperature was increased, and the top line width was narrowed. At this time, the etching rate was 149 μm / min at a temperature of 360 ° C., and the top line width was 340 μm.

このように、被処理物の温度が高くなるとエッチングレートが大きくなる理由として、活性種と被処理物の化学反応が促進される、または再付着する反応性生物の揮発が促進されることが考えられる。次に、温度が高くなるにつれて、Ｂｏｔｔｏｍの線幅がほとんど変化せずにＴｏｐの線幅が細線化する理由として、Ｓｉの表面における自然酸化膜の形成の有無が、１つの原因であると推測できる。この推測を、図９に示した模式図を用いて説明する。図９は板状電極５と、ある深さまでエッチングを進行させた際の被処理物１５として用いたＳｉのエッチング形状を示している。この図のように、エッチング中は、板状電極５の先端部Ｇ部とＩ点間の強電界により放電が発生しエッチングが進行するが、同時にこの系の中で比較的距離の小さい先端部Ｇ部とＨ点間でも放電が発生しやすい。この時、被処理物であるＳｉが室温に近い温度であれば、Ｓｉの表面に充分な自然酸化膜が形成されないため、板状電極５の先端部Ｇ部とＩ点間のエッチングの進行とともに、Ｈ点付近でのエッチングも進行する。しかしＳｉの温度が高くなると、例えばＳｉの自然酸化膜が形成されやすいＨ点近傍でのエッチングレートが低下するが、自然酸化膜が形成されにくいＩ点近傍ではエッチングが進行することが推測できる。なお、自然酸化膜の形成速度の違いは、大気中からプラズマ中に僅かに混入した酸素分子が解離して発生する酸素ラジカルに起因するものと考えられる。従って図中では、Ｊ近傍、Ｈ近傍、Ｉ近傍の順に大気から混入する酸素濃度が高く、酸化されやすいことが予想できる。このため、Ｓｉが高温になるにつれてＴｏｐの線幅が細線化すると考えられる。   As described above, the reason why the etching rate increases as the temperature of the object to be treated increases is that the chemical reaction between the active species and the object to be treated is promoted, or the volatilization of the reactive organism that reattaches is promoted. It is done. Next, as the temperature rises, the bottom line width hardly changes as the bottom line width changes, and the reason why the top line width is thinned is probably due to the presence or absence of the formation of a natural oxide film on the Si surface. it can. This estimation will be described with reference to the schematic diagram shown in FIG. FIG. 9 shows the plate-like electrode 5 and the etching shape of Si used as the object to be processed 15 when the etching is advanced to a certain depth. As shown in this figure, during etching, a discharge is generated due to a strong electric field between the tip portion G and the point I of the plate electrode 5 and etching proceeds, but at the same time, the tip portion having a relatively small distance in this system. Discharge is likely to occur between the G part and the H point. At this time, if Si to be processed is at a temperature close to room temperature, a sufficient natural oxide film is not formed on the surface of Si, so that the etching between the tip G portion and the I point of the plate electrode 5 progresses. Etching near the H point also proceeds. However, when the temperature of Si increases, for example, the etching rate near the H point where a natural oxide film of Si is likely to be formed decreases, but it can be estimated that the etching proceeds near the I point where the natural oxide film is difficult to form. The difference in the formation rate of the natural oxide film is considered to be caused by oxygen radicals generated by dissociating oxygen molecules slightly mixed in the plasma from the atmosphere. Therefore, in the figure, it can be expected that the oxygen concentration mixed in from the atmosphere increases in the order of J, H, and I, and is easily oxidized. For this reason, it is thought that the line width of Top becomes thinner as the temperature of Si becomes higher.

以上述べた本発明の実施形態において、プラズマ源として平行平板型タイプとしてのナイフエッジ電極のものを用いる場合を例示したが、その他の平行平板タイプ、誘導結合型タイプなど、平行平板型キャピラリタイプや、他方式のキャピラリタイプ、マイクロギャップ方式、誘導結合型チューブタイプ、針状電極タイプなど、様々なプラズマ源を用いることができる。   In the embodiment of the present invention described above, the case of using a knife edge electrode as a parallel plate type as the plasma source has been exemplified, but other parallel plate types, inductively coupled types, and the like, parallel plate type capillary types, Various plasma sources such as other types of capillary type, microgap type, inductive coupling type tube type, and needle electrode type can be used.

また、プラズマ源の有する電位制御可能な電極を接地電位とし、対向電極に電力を供給させた場合についてのみ例示したが、これに限らずプラズマ源の有する電位制御可能な電極に電力を供給し、対向電極を接地電位とした場合にも同様の効果が得られる。また、プラズマ源の有する電位制御可能な電極と対向電極の双方に電力を供給した場合にも同様の効果が得られる。さらには、プラズマ源の有する電位制御可能な電極と対向電極の片方にのみ電力を供給し、他方を浮遊電位とした場合にも同様の効果が得られる。   Moreover, the potential controllable electrode of the plasma source is set to the ground potential, and only the case where power is supplied to the counter electrode is illustrated, but not limited thereto, power is supplied to the potential controllable electrode of the plasma source, The same effect can be obtained when the counter electrode is set to the ground potential. The same effect can be obtained when power is supplied to both the potential controllable electrode and the counter electrode of the plasma source. Further, the same effect can be obtained when electric power is supplied to only one of the potential controllable electrode and the counter electrode of the plasma source and the other is set to a floating potential.

また、高周波電力を用いてマイクロプラズマ源を発生させる場合を例示したが、数百ｋＨｚから数ＧＨｚまでの高周波電力を用いてマイクロプラズマ源を発生させることが可能である。あるいは、直流電圧を用いてもよいし、直流パルス電圧、高周波パルス電力を供給することも可能である。特に直流電圧では、プラズマ中のイオンを引き込む作用を強め、加工速度もしくは成膜速度を向上させることも可能である。さらに、パルス電力を供給した場合は、アーク放電への移行を抑制しつつ、高効率なプラズマを生成することも可能である。   Moreover, although the case where the microplasma source was generated using high frequency power was illustrated, it is possible to generate the microplasma source using high frequency power from several hundred kHz to several GHz. Alternatively, a DC voltage may be used, or a DC pulse voltage or a high frequency pulse power can be supplied. In particular, with a DC voltage, it is possible to enhance the action of attracting ions in the plasma and improve the processing speed or the film formation speed. Furthermore, when pulse power is supplied, it is possible to generate highly efficient plasma while suppressing the transition to arc discharge.

また、被処理物に直流電圧または高周波電力を供給することにより、マイクロプラズマ中のイオンを引き込む作用を強めることも可能である。この場合、プラズマ源の有する電位制御可能な電極を接地してもよいし、電極を用いないタイプのマイクロプラズマ源を利用する場合にも、本発明の適用が可能である。   In addition, by supplying a DC voltage or high frequency power to the object to be processed, it is possible to enhance the action of drawing ions in the microplasma. In this case, the potential controllable electrode of the plasma source may be grounded, or the present invention can be applied to the case of using a microplasma source that does not use an electrode.

また、被処理物上の金属部または半導体部に高周波電力、直流電圧、パルス状直流電圧、パルス状高周波電力を供給することにより、プラズマ中のイオンを引き込む作用を強め、加工速度もしくは成膜速度を向上させることも可能である。   In addition, by supplying high-frequency power, DC voltage, pulsed DC voltage, and pulsed high-frequency power to the metal part or semiconductor part on the object to be processed, the action of drawing ions in the plasma is strengthened, and the processing speed or film forming speed is increased. It is also possible to improve.

また、プラズマ処理としてエッチングについてのみ例示したが、プラズマ処理はこれに限定されるものではなく、プラズマクリーニング、ＣＶＤ、スパッタリングやプラズマドーピング等の様々なプラズマ処理についても適用できる。   Further, although only the etching is illustrated as the plasma treatment, the plasma treatment is not limited to this, and can be applied to various plasma treatments such as plasma cleaning, CVD, sputtering, and plasma doping.

また、温度として１００℃から３６０℃までについて述べてが、これに限るものでない。１００℃以上で効果があり、３００℃以上になると格別の効果を得られる。さらに温度が高いほど表面酸化の効果が高くなり、好ましい。しかし、融点の２／３以上まで温度を高くすると、被処理物が構造変化しやすくなり好ましくない。   Further, the temperature is described from 100 ° C. to 360 ° C., but is not limited thereto. There is an effect at 100 ° C. or higher, and a special effect can be obtained at 300 ° C. or higher. Furthermore, the higher the temperature, the higher the effect of surface oxidation, which is preferable. However, if the temperature is increased to 2/3 or higher of the melting point, the structure of the object to be processed is likely to change, which is not preferable.

また、被処理物としてＳｉを用いる場合を例示したが、被処理物はこれに限定されるものではなく、石英やモリブデンなど種々の基板のプラズマ処理、または、種々の膜がコーティングされた被処理物のプラズマ処理に適用できる。ＨｅとＯ2の混合ガスを用いてフォトレジストやポリイミドに代表される樹脂等のエッチング加工を行うこともできる。また、シート状の被処理物をロール・トゥ・ロール方式で搬送しつつ、連続的にプラズマ処理することもできる。あるいは、種々の被処理物の表面にプラズマＣＶＤ法による薄膜堆積を行うこともできる。中でも、被処理物の体積抵抗率が１０8（Ω・ｃｍ）以下である場合、被処理物は半導体層もしくは金属層となり、体積抵抗率が１０8（Ω・ｃｍ）より大きい絶縁体層に比べて、酸素と反応して酸化膜を形成しやすく、高い効果を得られる。さらに、１０-6（Ω・ｃｍ）以下である場合、被処理物は金属層となり、さらに酸素と反応しやすくなるため、格別の効果を得られる。 Moreover, although the case where Si was used as an object to be processed was illustrated, the object to be processed is not limited to this, and plasma processing of various substrates such as quartz and molybdenum, or an object to be processed coated with various films Applicable to plasma processing of objects. Etching of a resin typified by photoresist or polyimide can also be performed using a mixed gas of He and O2. In addition, plasma processing can be continuously performed while a sheet-like object to be processed is conveyed by a roll-to-roll method. Alternatively, thin film deposition by plasma CVD can be performed on the surface of various objects to be processed. In particular, when the volume resistivity of the object to be processed is 10 8 (Ω · cm) or less, the object to be processed becomes a semiconductor layer or a metal layer, and the insulator layer has a volume resistivity larger than 10 8 (Ω · cm). In comparison, it is easy to react with oxygen to form an oxide film, and a high effect can be obtained. Furthermore, when it is 10 −6 (Ω · cm) or less, the object to be treated becomes a metal layer, and it becomes easier to react with oxygen, so that a special effect can be obtained.

また、不活性ガスとしてＨｅを、反応性ガス・エッチング性ガスとしてＳＦ6を用いる場合を例示したが、これら以外のガスを適宜用いることができることはいうまでもない。例えば、不活性ガスとして、大気圧下で比較的放電開始電圧の低いＨｅ、Ｎｅ、Ａｒ、Ｋｒ、Ｘｅなどを、反応性・エッチング性ガスとして、反応性の高い酸素やハロゲン元素を含む、Ｏ2、ＣＦ4などのＣｘＦｙ（ｘ及びｙは自然数）、ＮＦ3、Ｃｌ2、ＨＢｒ等のガスを用いることができる。 Further, the case where He is used as the inert gas and SF 6 is used as the reactive gas / etching gas is exemplified, but it goes without saying that other gases can be used as appropriate. For example, an inert gas such as He, Ne, Ar, Kr, or Xe that has a relatively low discharge start voltage under atmospheric pressure, and a reactive / etching gas that contains highly reactive oxygen or halogen elements. 2 or a gas such as CxFy such as CF 4 (where x and y are natural numbers), NF 3 , Cl 2 , and HBr.

また、マイクロプラズマ源の開口部をなす微細線の幅が０．０５ｍｍである場合を例示したが、マイクロプラズマ源の開口部の幅はこれに限定されるものではなく、概ね１ｍｍ以下であることが好ましい。マイクロプラズマ源の幅が小さいほど、プラズマによって発生した粒子が、被処理物表面の微細線状部分より外側に触れにくくなり、微細線状部分に限定された領域のみを加工することができるという利点がある。一方、マイクロプラズマ源を構成する部品の加工精度や、繰り返し処理による形状の経時変化などを考慮すると、あまり極端に小さくすることも避けるべきである。   Moreover, although the case where the width | variety of the fine line which makes the opening part of a microplasma source was 0.05 mm was illustrated, the width | variety of the opening part of a microplasma source is not limited to this, It should be 1 mm or less in general Is preferred. The smaller the width of the microplasma source, the more difficult it is for the particles generated by the plasma to touch the outside of the fine linear portion of the surface of the object to be processed, and only the region limited to the fine linear portion can be processed. There is. On the other hand, considering the processing accuracy of the components constituting the microplasma source and the change over time of the shape due to repeated processing, it should be avoided to make it extremely small.

また、マイクロプラズマ源の開口部と被処理物との距離は、概ね１ｍｍ以下であることが好ましい。さらに、マイクロプラズマ源の開口部と被処理物との距離が０．５ｍｍ以下であることがより好ましい。マイクロプラズマ源の開口部と被処理物との距離が小さいほど、プラズマによって発生した活性粒子が、基板表面の微細線状部分より外側に触れにくくなり、微細線状部分に限定された領域のみを加工することができるという利点がある。一方、マイクロプラズマ源を構成する部品の加工精度や、繰り返し処理による形状の経時変化、さらには、マイクロプラズマ源の開口部と被処理物との距離の再現性や安定性などを考慮すると、あまり極端に小さくすることは避けるべきであり、概ね０．０３ｍｍ以上であることが好ましい。   Further, the distance between the opening of the microplasma source and the object to be processed is preferably approximately 1 mm or less. Furthermore, it is more preferable that the distance between the opening of the microplasma source and the object to be processed is 0.5 mm or less. The smaller the distance between the opening of the microplasma source and the object to be processed, the more difficult it is for the active particles generated by the plasma to touch the outside of the fine linear portion of the substrate surface, and only the region limited to the fine linear portion. There is an advantage that it can be processed. On the other hand, considering the processing accuracy of the parts that make up the microplasma source, changes over time due to repeated processing, and the reproducibility and stability of the distance between the opening of the microplasma source and the object to be processed, It should be avoided to make it extremely small, and is preferably approximately 0.03 mm or more.

また、内側ガス噴出口より噴出するガスの流量に対する外側ガス噴出口より噴出するガスの流量比率が１％よりも大きいと、外側ガス噴出口から噴出するガスによってプラズマを微細領域に発生させる効果が大きいという利点がある。一方、流量比率が大きすぎるとプラズマが極端に発生しにくくなるため、概ね２００％以下であることが好ましい。   Further, if the flow rate ratio of the gas ejected from the outer gas jet port to the flow rate of the gas jetted from the inner gas jet port is larger than 1%, the effect of generating plasma in the fine region by the gas jetted from the outer gas jet port is obtained. There is an advantage of being large. On the other hand, if the flow rate ratio is too large, plasma is extremely difficult to be generated, and therefore it is preferably approximately 200% or less.

また、マイクロプラズマ源の開口部が微細線状をなしている場合を例示したが、マイクロプラズマ源の開口部が微細点状をなしてもよい。この場合、微細点状プラズマの直径方向のサイズを制御でき、マイクロプラズマ源の開口部の代表寸法が１ｍｍ以下である場合に、とくに格別の効果を奏する。   Moreover, although the case where the opening part of the microplasma source has formed the fine line shape was illustrated, the opening part of the microplasma source may form a fine dot shape. In this case, the size of the fine dot plasma in the diameter direction can be controlled, and particularly when the representative dimension of the opening of the microplasma source is 1 mm or less, a special effect is achieved.

本発明のプラズマ処理方法および装置は、所望の微細線状部分を精度良く高速に加工する、例えば厚さ１ｍｍの板状電極において、線幅３５０μｍ程度、エッチングレート１５０μｍ／ｍｉｎ程度を実現でき、電子デバイス等の微細線形状加工だけでなく、微細穴形状加工の用途にも適用できる。   The plasma processing method and apparatus of the present invention can process a desired fine linear portion at high speed with high accuracy. For example, in a plate electrode having a thickness of 1 mm, a line width of about 350 μm and an etching rate of about 150 μm / min can be realized. It can be applied not only to fine line shape processing such as devices but also to fine hole shape processing.

本発明の実施形態及び従来例で用いたマイクロプラズマ源の分解図Exploded view of the microplasma source used in the embodiment of the present invention and the conventional example 本発明の実施形態及び従来例で用いたマイクロプラズマ源の平面図Plan view of a microplasma source used in an embodiment of the present invention and a conventional example 本発明の実施形態及び従来例で用いたマイクロプラズマ源の断面図Sectional drawing of the microplasma source used in the embodiment of the present invention and the conventional example 従来例で用いた線加工の加工形状の断面図Cross-sectional view of the processing shape of wire processing used in the conventional example 本発明の第１実施形態で用いたマイクロプラズマ源の断面図Sectional drawing of the microplasma source used in 1st Embodiment of this invention 本発明の第１実施形態におけるエッチングレートと温度依存性の相関を示す図The figure which shows the correlation of the etching rate and temperature dependence in 1st Embodiment of this invention 本発明の第１実施形態におけるＴｏｐの線幅と相関を示す図The figure which shows the line | wire width of Top and correlation in 1st Embodiment of this invention. 本発明の第１実施形態におけるＢｏｔｔｏｍの線幅と温度依存性の相関を示す図The figure which shows the correlation of the line width of Bottom and temperature dependence in 1st Embodiment of this invention. 本発明の第１および第２実施形態におけるメカニズム推測の模式図Schematic diagram of mechanism estimation in the first and second embodiments of the present invention 本発明の第２実施形態で用いたマイクロプラズマ源の断面図Sectional drawing of the microplasma source used in 2nd Embodiment of this invention 本発明の第２実施形態におけるエッチングレートと温度依存性の相関を示す図The figure which shows the correlation of the etching rate and temperature dependence in 2nd Embodiment of this invention 本発明の第２実施形態におけるＴｏｐの線幅と相関を示す図The figure which shows the line | wire width of Top and correlation in 2nd Embodiment of this invention. 本発明の第２実施形態におけるＢｏｔｔｏｍの線幅と相関を示す図The figure which shows the line | wire width and correlation of Bottom in 2nd Embodiment of this invention. 従来例で用いたレジストプロセスの工程を示す断面図Sectional drawing which shows the process of the resist process used in the conventional example

符号の説明Explanation of symbols

１ 外側板
２ 内側板
３ 内側板
４ 外側板
５ 板状電極
７ 外側ガス噴出口
９ 内側ガス噴出口
１５ 被処理物
１６ 対向電極 DESCRIPTION OF SYMBOLS 1 Outer plate 2 Inner plate 3 Inner plate 4 Outer plate 5 Plate electrode 7 Outer gas outlet 9 Inner gas outlet 15 Processed object 16 Counter electrode

Claims (21)

ガス流路とガス噴出口と電位制御可能な電極を有するプラズマ源を被処理物近傍に載置させ、ガス流路にガスを供給しつつ、電位制御可能な電極に電力を投入させることでプラズマを発生させて、プラズマから発生する活性種およびガスをガス噴出口より被処理物に対して噴出させるプラズマ処理方法であって、
被処理物に直接もしくは間接的に接触させた発熱器によって、被処理物を１００℃以上に加熱させつつプラズマ処理すること
を特徴とするプラズマ処理方法。 A plasma source having a gas flow channel, a gas ejection port, and a potential controllable electrode is placed in the vicinity of the object to be processed, and plasma is supplied by supplying power to the potential controllable electrode while supplying gas to the gas flow channel. A plasma processing method in which activated species and gas generated from plasma are ejected from a gas ejection port to an object to be treated,
A plasma processing method, characterized in that plasma processing is performed while heating an object to be processed at 100 ° C. or higher by a heat generator brought into direct or indirect contact with the object to be processed. ガス流路とガス噴出口と電位制御可能な電極を有するプラズマ源を被処理物近傍に載置させ、ガス流路にガスを供給しつつ、電位制御可能な電極を接地電位とし、プラズマ源と対向する位置に載置させた電位制御可能な対向電極、もしくは被処理物に電力を投入することでプラズマを発生させて、プラズマから発生する活性種およびガスをガス噴出口より被処理物に対して噴出させるプラズマ処理方法であって、
被処理物に直接もしくは間接的に接触させた発熱器によって、被処理物を１００℃以上に加熱させつつプラズマ処理すること
を特徴とするプラズマ処理方法。 A plasma source having a gas flow channel, a gas ejection port, and a potential-controllable electrode is placed in the vicinity of the object to be processed, and the potential-controllable electrode is set to the ground potential while supplying gas to the gas flow channel. Plasma is generated by applying electric power to a counter electrode capable of controlling the potential placed on the opposite position or the object to be processed, and the active species and gas generated from the plasma are applied to the object to be processed from the gas outlet. A plasma processing method for jetting
A plasma processing method, characterized in that plasma processing is performed while heating an object to be processed at 100 ° C. or higher by a heat generator brought into direct or indirect contact with the object to be processed. ガス流路とガス噴出口と電位制御可能な電極を有するプラズマ源を被処理物近傍に載置させ、ガス流路にガスを供給しつつ、電位制御可能な電極に電力を投入することでプラズマを発生させて、プラズマから発生する活性種およびガスをガス噴出口より被処理物に対して噴出させるプラズマ処理方法であって、
プラズマ源の一部に直接もしくは間接的に発熱器を接触させ、プラズマ源から発生する輻射熱により、被処理物を１００℃以上に加熱させつつプラズマ処理すること
を特徴とするプラズマ処理方法。 A plasma source having a gas flow path, a gas ejection port, and a potential controllable electrode is placed near the object to be processed, and plasma is supplied by supplying power to the potential controllable electrode while supplying gas to the gas flow path. A plasma processing method in which activated species and gas generated from plasma are ejected from a gas ejection port to an object to be treated,
A plasma processing method, wherein a heat generator is brought into contact with a part of a plasma source directly or indirectly, and the object to be processed is heated to 100 ° C. or more by radiant heat generated from the plasma source. ガス流路とガス噴出口と電位制御可能な電極を有するプラズマ源を被処理物近傍に載置させ、ガス流路にガスを供給しつつ、電位制御可能な電極を接地電位とし、プラズマ源と対向する位置に載置させた電位制御可能な対向電極、もしくは被処理物に電力を投入することでプラズマを発生させて、プラズマから発生する活性種およびガスをガス噴出口より被処理物に対して噴出させるプラズマ処理方法であって、
プラズマ源の一部に直接もしくは間接的に発熱器を接触させ、プラズマ源から発生する輻射熱により、被処理物を１００℃以上に加熱させつつプラズマ処理すること
を特徴とするプラズマ処理方法。 A plasma source having a gas flow channel, a gas ejection port, and a potential-controllable electrode is placed in the vicinity of the object to be processed, and the potential-controllable electrode is set to the ground potential while supplying gas to the gas flow channel. Plasma is generated by applying electric power to a counter electrode capable of controlling the potential placed on the opposite position or the object to be processed, and the active species and gas generated from the plasma are applied to the object to be processed from the gas outlet. A plasma processing method for jetting
A plasma processing method, wherein a heat generator is brought into contact with a part of a plasma source directly or indirectly, and the object to be processed is heated to 100 ° C. or more by radiant heat generated from the plasma source. ガス噴出口、対向電極もしくはプラズマ源に載置させた電極が、線状もしくは長方形を為し、被処理物に対して線状にプラズマ処理することを特徴とする請求項１，２，３または４の何れか一項に記載のプラズマ処理方法。 The gas jetting port, the counter electrode, or the electrode placed on the plasma source has a linear shape or a rectangular shape, and performs plasma processing on the workpiece in a linear manner. 5. The plasma processing method according to any one of 4 above. ガス流路およびガス噴出口が２系統あり、第１のガス噴出口が第２のガス噴出口より内側に位置し、第１のガス噴出口から不活性ガスを含むガスおよび活性種を噴出しつつ、第２のガス噴出口から反応性ガスを含むガスおよび活性種を噴出することを特徴とする請求項１，２，３または４の何れか一項に記載のプラズマ処理方法。 There are two systems of gas flow paths and gas outlets, the first gas outlet is located on the inner side of the second gas outlet, and gas including inert gas and active species are discharged from the first gas outlet. 5. The plasma processing method according to claim 1, wherein a gas including a reactive gas and active species are ejected from the second gas ejection port. 前記不活性ガスは、Ｈｅ、Ａｒ、Ｎｅ、Ｘｅのいずれかであることを特徴とする請求項６記載のプラズマ処理方法。 The plasma processing method according to claim 6, wherein the inert gas is any one of He, Ar, Ne, and Xe. 前記反応性ガスは、ＳＦ6、ＣＦ4などのＣｘＦｙ（ｘ及びｙは自然数）、ＮＦ3、O2、Ｃｌ2、ＨＢｒ等のハロゲン含有ガスを少なくとも１種類以上含むことを特徴とする請求項６記載のプラズマ処理方法。 The reactive gas contains at least one halogen-containing gas such as CxFy (x and y are natural numbers) such as SF 6 and CF 4 , NF 3 , O 2 , Cl 2 , and HBr. 6. The plasma processing method according to 6. 被処理物の有する融点の２／３以下の温度に被処理物を加熱することを特徴とする請求項１、２、３または４の何れか一項に記載のプラズマ処理方法。 5. The plasma processing method according to claim 1, wherein the object to be processed is heated to a temperature equal to or lower than 2/3 of a melting point of the object to be processed. 被処理物は、体積抵抗率が１０8（Ω・ｃｍ）以下である基板もしくは薄膜を有すること を特徴とする請求項１、２、３または４の何れか一項に記載のプラズマ処理方法。 The plasma processing method according to any one of claims 1, 2, 3, and 4, wherein the object to be processed includes a substrate or a thin film having a volume resistivity of 10 8 (Ω · cm) or less. 被処理物は、体積抵抗率が１０-6（Ω・ｃｍ）以下である基板もしくは薄膜を有すること を特徴とする請求項１、２、３または４の何れか一項に記載のプラズマ処理方法。 5. The plasma processing method according to claim 1, wherein the workpiece has a substrate or a thin film having a volume resistivity of 10 −6 (Ω · cm) or less. . 大気圧近傍の圧力において処理することを特徴とする請求項１，２，３または４の何れか一項に記載のプラズマ処理方法。 5. The plasma processing method according to claim 1, wherein the processing is performed at a pressure close to atmospheric pressure. 発熱器、もしくは輻射熱により被処理物を加熱させる温度が３００℃以上であることを特徴とする請求項１，２，３または４の何れか一項に記載のプラズマ処理方法。 5. The plasma processing method according to claim 1, wherein the temperature at which the workpiece is heated by a heat generator or radiant heat is 300 ° C. or higher. ガス流路と、ガス流路を経由して大気中にガスを噴出させることが可能なガス噴出口と、電位制御可能な電極を有するプラズマ処理装置であって、
被処理物に直接もしくは間接的に接触させることが可能な位置に、１００℃以上の発熱能力を有する発熱器を備えたこと
を特徴とするプラズマ処理装置。 A plasma processing apparatus having a gas flow channel, a gas jet port capable of jetting gas into the atmosphere via the gas flow channel, and an electrode capable of controlling the potential,
A plasma processing apparatus comprising a heat generator having a heat generation capability of 100 ° C. or higher at a position where the object can be directly or indirectly brought into contact with an object to be processed. ガス流路と、ガス流路を経由して大気中にガスを噴出させることが可能なガス噴出口と、電位制御可能な電極を有するプラズマ源を備え、プラズマ源と対向となる位置に電位制御可能な対向電極を備えたプラズマ処理装置であって、
被処理物に直接もしくは間接的に接触させることが可能な位置に、１００℃以上の発熱能力を有する発熱器を備えたこと
を特徴とするプラズマ処理装置。 A gas flow path, a gas jet port capable of jetting gas into the atmosphere via the gas flow path, and a plasma source having a potential controllable electrode, the potential control at a position facing the plasma source A plasma processing apparatus with possible counter electrodes,
A plasma processing apparatus comprising a heat generator having a heat generation capability of 100 ° C. or higher at a position where the object can be directly or indirectly brought into contact with an object to be processed. ガス流路と、ガス流路を経由して大気中にガスを噴出させることが可能なガス噴出口と、電位制御可能な電極を有するプラズマ処理装置であって、
プラズマ源の一部に直接もしくは間接的に接触させることが可能な位置に、１００℃以上の発熱能力を有する発熱器を備えたこと
を特徴とするプラズマ処理装置。 A plasma processing apparatus having a gas flow channel, a gas jet port capable of jetting gas into the atmosphere via the gas flow channel, and an electrode capable of controlling the potential,
A plasma processing apparatus comprising a heat generator having a heat generation capability of 100 ° C. or higher at a position where it can be directly or indirectly brought into contact with a part of a plasma source. ガス流路と、ガス流路を経由して大気中にガスを噴出させることが可能なガス噴出口と、電位制御可能な電極を有するプラズマ源を備え、プラズマ源と対向となる位置に電位制御可能な対向電極を備えたプラズマ処理装置であって、
プラズマ源の一部に直接もしくは間接的に接触させることが可能な位置に、１００℃以上の発熱能力を有する発熱器を備えたこと
を特徴とするプラズマ処理装置。 A gas flow path, a gas jet port capable of jetting gas into the atmosphere via the gas flow path, and a plasma source having a potential controllable electrode, the potential control at a position facing the plasma source A plasma processing apparatus with possible counter electrodes,
A plasma processing apparatus comprising a heat generator having a heat generation capability of 100 ° C. or higher at a position where it can be directly or indirectly brought into contact with a part of a plasma source. ガス噴出口、対向電極もしくはプラズマ源に載置させた電極が、線状もしくは長方形を為すことを特徴とする請求項１４，１５，１６または１７の何れか一項に記載のプラズマ処理装置。 The plasma processing apparatus according to any one of claims 14, 15, 16 and 17, wherein the gas nozzle, the counter electrode, or the electrode placed on the plasma source has a linear shape or a rectangular shape. ガス流路およびガス噴出口が２系統あり、第１のガス噴出口が第２のガス噴出口より内側に位置することを特徴とする請求項１４，１５，１６または１７の何れか一項に記載のプラズマ処理装置。 18. The gas flow path and the gas outlet are two systems, and the first gas outlet is located inside the second gas outlet, 18, 15, 16, or 17, The plasma processing apparatus as described. 被処理物に対向した２つ以上のガス流路にそれぞれ異なるガスを供給しつつ、前記ガス流路の中心部に配設された電極に高周波電力を印加することで前記被処理物の表面にプラズマを発生させ、前記被処理物を処理するプラズマ処理方法であって、前記電極に配置された発熱器によって、前記被処理物を１００℃以上に加熱させることを特徴とするプラズマ処理方法。 While supplying different gases to two or more gas flow paths opposed to the object to be processed, high frequency power is applied to the electrode disposed at the center of the gas flow path to the surface of the object to be processed. A plasma processing method for generating plasma and processing the object to be processed, wherein the object to be processed is heated to 100 ° C. or higher by a heat generator disposed on the electrode. 被処理物に対向した２つ以上のガス流路にそれぞれ異なるガスを供給しつつ、前記ガス流路の中心部に配設された電極に高周波電力を印加することで前記被処理物の表面にプラズマを発生させ、前記被処理物を処理するプラズマ処理方法であって、前記電極に対向する面とは逆の被処理物の表面に配置された発熱器によって、前記被処理物を１００℃以上に加熱させることを特徴とするプラズマ処理方法。 While supplying different gases to two or more gas flow paths opposed to the object to be processed, high frequency power is applied to the electrode disposed at the center of the gas flow path to the surface of the object to be processed. A plasma processing method for generating plasma and processing the object to be processed, wherein the object to be processed is set to 100 ° C. or higher by a heater disposed on the surface of the object to be processed opposite to the surface facing the electrode. A plasma processing method characterized by heating the substrate.
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100662210B1 (en) 2006-01-24 2006-12-28 주식회사 셈테크놀러지 Apparatus of nozzle type for treating the surface of a substrate with plasma in atmospheric pressure
WO2007000989A1 (en) * 2005-06-27 2007-01-04 Kyoto University Electromagnetic wave control element, electromagnetic wave control device, electromagnetic wave control plasma, and electromagnetic wave control method
JP2007213822A (en) * 2006-02-07 2007-08-23 Matsushita Electric Ind Co Ltd Microplasma jet generator
JP2009194048A (en) * 2008-02-13 2009-08-27 Sekisui Chem Co Ltd Plasma processing apparatus
JP2014212303A (en) * 2013-04-03 2014-11-13 独立行政法人産業技術総合研究所 Stage type plasma etching device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007000989A1 (en) * 2005-06-27 2007-01-04 Kyoto University Electromagnetic wave control element, electromagnetic wave control device, electromagnetic wave control plasma, and electromagnetic wave control method
JPWO2007000989A1 (en) * 2005-06-27 2009-01-22 国立大学法人京都大学 Electromagnetic wave control element, electromagnetic wave control device, electromagnetic wave control plasma and electromagnetic wave control method
JP4613321B2 (en) * 2005-06-27 2011-01-19 国立大学法人京都大学 Electromagnetic wave control element, electromagnetic wave control device, and electromagnetic wave control method
KR100662210B1 (en) 2006-01-24 2006-12-28 주식회사 셈테크놀러지 Apparatus of nozzle type for treating the surface of a substrate with plasma in atmospheric pressure
JP2007213822A (en) * 2006-02-07 2007-08-23 Matsushita Electric Ind Co Ltd Microplasma jet generator
JP2009194048A (en) * 2008-02-13 2009-08-27 Sekisui Chem Co Ltd Plasma processing apparatus
JP2014212303A (en) * 2013-04-03 2014-11-13 独立行政法人産業技術総合研究所 Stage type plasma etching device

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