JP2005051008A - Device and method for development processing - Google Patents

Device and method for development processing Download PDF

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JP2005051008A
JP2005051008A JP2003280842A JP2003280842A JP2005051008A JP 2005051008 A JP2005051008 A JP 2005051008A JP 2003280842 A JP2003280842 A JP 2003280842A JP 2003280842 A JP2003280842 A JP 2003280842A JP 2005051008 A JP2005051008 A JP 2005051008A
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developer
substrate
porous plate
wafer
development processing
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JP4263559B2 (en
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Tetsuya Kitamura
哲也 北村
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Tokyo Electron Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
    • B05C5/02—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
    • B05C5/02—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work
    • B05C5/027—Coating heads with several outlets, e.g. aligned transversally to the moving direction of a web to be coated
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
    • B05C9/02—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material to surfaces by single means not covered by groups B05C1/00 - B05C7/00, whether or not also using other means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
    • B05C5/02—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work
    • B05C5/0254—Coating heads with slot-shaped outlet

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Coating Apparatus (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To prevent mixing of air bubbles into developer and flow of the developer on a wafer upon supplying the developer. <P>SOLUTION: A development processing device 18 is provided with a casing 70 above a spin chuck 60. An exhaust pipe 90 is connected to the casing 70 to form a negative chamber S in the casing 70. The lower surface unit of the casing 70 is formed of a porous plate 71. A developer discharging nozzle 72 is provided in the casing 70, and a discharging port 73 is contacted with the upper surface of the porous plate 71. The developer discharging nozzle 72 can be moved in the casing 70 into a given direction by a nozzle moving mechanism 80. The developer is included into the porous plate 71 under a condition that the inside of the casing 70 is evacuated. When the developer is discharged out of the developer discharging nozzle 72, the developer in the porous plate 71 is forced out to the side of the wafer W. The developer discharging nozzle 72 is moved to supply the developer to the whole surface of the wafer W. The developer is supplied through the porous plate 71 whereby mixing of air bubbles and flow of developer can be prevented. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は，基板の現像処理装置及び基板の現像処理方法に関する。   The present invention relates to a substrate development processing apparatus and a substrate development processing method.

半導体デバイスの製造プロセスにおけるフォトリソグラフィー工程では，例えばウェハ表面にレジスト液を塗布し，レジスト膜を形成するレジスト塗布処理，ウェハに所定パターンの光を照射し，ウェハを露光する露光処理，露光後のウェハに現像液を供給し，当該ウェハを現像する現像処理等が行われている。   In the photolithography process in the semiconductor device manufacturing process, for example, a resist solution is applied to the wafer surface, a resist coating process for forming a resist film, an exposure process for exposing the wafer to a predetermined pattern of light, and an exposure process for exposing the wafer. A developing process for supplying a developing solution to the wafer and developing the wafer is performed.

上述の現像処理は，通常現像処理装置で行われ，現像処理装置には，ウェハの直径よりも長いスリット状の吐出口を有する現像液吐出ノズルが備えられている。そして，現像処理におけるウェハへの現像液の供給は，現像液吐出ノズルが吐出口から現像液を吐出しながら，ウェハ上をウェハの一端部から他端部まで移動することによって行われている。ウェハ上に現像液が供給されると，ウェハ上では，現像液とレジスト膜の所定部分，例えば露光された部分が反応し，ウェハの現像が行われる。   The development processing described above is usually performed in a development processing apparatus, and the development processing apparatus is provided with a developer discharge nozzle having a slit-like discharge port longer than the diameter of the wafer. The developer is supplied to the wafer in the development process by moving the developer discharge nozzle from one end of the wafer to the other end while discharging the developer from the discharge port. When the developing solution is supplied onto the wafer, the developing solution reacts with a predetermined portion of the resist film, for example, an exposed portion, to develop the wafer.

しかしながら，上述の現像処理のように現像液吐出ノズルを移動させながら現像液を供給した場合，ウェハ上に供給された現像液に，例えばウェハの周縁部から内側方向に向かう流れが生じ，その流れによってウェハ面内の現像が均一に行われないことが指摘されていた。かかる問題を解決するために，ウェハの表面上に，多数の通流孔が形成された液流制御板を配置し，現像液吐出ノズルからの現像液を当該液流制御板を介してウェハ表面に供給する現像装置が提案されている（例えば特許文献１参照。）。   However, when the developer is supplied while moving the developer discharge nozzle as in the above-described development processing, for example, a flow inward from the peripheral edge of the wafer is generated in the developer supplied onto the wafer. Therefore, it has been pointed out that development within the wafer surface is not performed uniformly. In order to solve such a problem, a liquid flow control plate having a large number of flow holes is disposed on the surface of the wafer, and the developer from the developer discharge nozzle is passed through the liquid flow control plate to the wafer surface. Has been proposed (for example, see Patent Document 1).

特開２００３−１００５８９号公報JP 2003-100589 A

しかしながら，上記現像処理装置で現像処理を行った場合，各通流孔同士の間に間隔があり，現像液が各通流孔から別個にウェハ上に供給される。このため，各通流孔から供給される現像液同士の間に隙間ができ，現像液内に気泡が混入する恐れがあった。現像液内に気泡が混入すると，当該気泡部分の現像が行われず，現像斑ができる。この現像液内への気泡の混入を防止するために現像液吐出ノズルを低速で移動させると，今度は現像液の供給に時間が掛かり，処理効率が低下していた。さらに，通流孔のある部分では，現像液吐出ノズルから吐出された現像液が直接ウェハ表面に落下するので，ウェハ上に供給された現像液の流動を十分に抑制できなかった。   However, when the development processing is performed by the development processing apparatus, there is a space between the through holes, and the developer is separately supplied onto the wafer from the through holes. For this reason, a gap is formed between the developing solutions supplied from the through holes, and there is a possibility that bubbles are mixed in the developing solution. When bubbles are mixed in the developer, the bubbles are not developed and development spots are generated. If the developer discharge nozzle is moved at a low speed in order to prevent the bubbles from entering the developer, it takes time to supply the developer and the processing efficiency is lowered. Furthermore, the developer discharged from the developer discharge nozzle directly falls on the wafer surface in the portion having the flow hole, and therefore the flow of the developer supplied onto the wafer cannot be sufficiently suppressed.

本発明は，かかる点に鑑みてなされたものであり，現像液内に気泡が混入しないように，より短時間で，かつ現像液がウェハなどの基板上で流動しないように基板に現像液を供給できる現像処理装置及び現像処理方法を提供することをその目的とする。   The present invention has been made in view of the above points, and in order to prevent bubbles from entering the developer, the developer is applied to the substrate in a shorter time and so that the developer does not flow on a substrate such as a wafer. An object is to provide a development processing apparatus and a development processing method that can be supplied.

上記目的を達成するために，本発明は，基板を現像処理する現像処理装置であって，基板を水平に保持する基板保持部材と，前記基板保持部材に保持された基板の上方に配置され，内部に陰圧室を形成する筐体と，前記筐体内に設けられ，現像液を吐出する現像液吐出ノズルと，前記筐体内において前記現像液吐出ノズルを移動させるノズル移動機構と，を備え，前記現像液吐出ノズルの下面には，基板の一方向の寸法よりも長い距離に渡って吐出口が形成され，前記ノズル移動機構は，前記現像液吐出ノズルを，前記基板の一方向と直交する方向に向けて少なくとも基板の寸法よりも長い距離を移動させることができ，前記筐体の下面部は，現像液が通過可能な多孔質板により形成され，前記現像液吐出ノズルの前記吐出口は，前記多孔質板の上面に近接しており，前記吐出口から吐出される現像液は，前記多孔質板を通じて基板に供給されることを特徴とする。なお，上記「近接」には，隙間を空けて接近している場合のみならず，現像液吐出ノズルの吐出口が多孔質板に接触している場合も含まれる。   In order to achieve the above object, the present invention provides a development processing apparatus for developing a substrate, which is disposed above a substrate holding member that holds the substrate horizontally, and the substrate held by the substrate holding member, A housing that forms a negative pressure chamber therein; a developer discharge nozzle that is provided in the housing and discharges the developer; and a nozzle moving mechanism that moves the developer discharge nozzle in the housing; A discharge port is formed on a lower surface of the developer discharge nozzle over a distance longer than a dimension in one direction of the substrate, and the nozzle moving mechanism causes the developer discharge nozzle to be orthogonal to the one direction of the substrate. Can move at least a distance longer than the size of the substrate in the direction, and the lower surface of the housing is formed of a porous plate through which the developer can pass, and the discharge port of the developer discharge nozzle , Porous Of which was close to the upper surface, the developer discharged from the discharge port, characterized in that it is supplied to the substrate through the porous plate. The “proximity” includes not only the case of approaching with a gap but also the case where the discharge port of the developer discharge nozzle is in contact with the porous plate.

この発明によれば，現像液吐出ノズルが筐体内において移動しながら，吐出口から多孔質板に向けて現像液を吐出して，現像液が多孔質板を通じて基板に供給される。この場合，現像液が多孔質板を通過するので，現像液の流速が十分に低下し，その速度方向が分散した後に現像液が基板上に供給される。この結果，現像液が基板上で流動することがなく，基板の現像が基板面内において均等に行われる。また，現像液吐出ノズルが多孔質板上を移動するにつれ，多孔質板から基板上に現像液が途切れることなく連続的に供給されるので，現像液中に気泡が混入することがなく，現像液吐出ノズルの移動速度を上げることができる。したがって，基板の現像を斑なく，短時間で行うことができる。さらに，筐体内に陰圧室が形成できるので，例えば筐体内を陰圧にした状態で多孔質板中に現像液を含ませて，現像液が多孔質板から垂れ落ちないようにすることができる。そして，その現像液を含ませた多孔質板に対し，上方の現像液吐出ノズルから現像液を吐出することにより，多孔質板中の現像液を下方の基板側に押し出すことができる。この場合，吐出口からの現像液の吐出により，直ちに多孔質板の下面から基板に現像液が押し出されるので，現像液の供給を短時間で行うことができる。また，筐体内を陰圧にして，多孔質板中の現像液が基板側に垂れ落ちることを防止できる。さらに，現像液を多孔質板と基板表面との間に挟み込んで現像液を広げることができるので，基板の表面が疎水性であっても，また現像液の液量が少なくても基板の表面の全面に現像液を行き渡らせることができる。それ故，現像液の消費量を低減し，あらゆる基板に対しても適正に現像できる。   According to this invention, while the developer discharge nozzle moves in the housing, the developer is discharged from the discharge port toward the porous plate, and the developer is supplied to the substrate through the porous plate. In this case, since the developing solution passes through the porous plate, the flow rate of the developing solution is sufficiently lowered and the developing solution is supplied onto the substrate after the speed direction is dispersed. As a result, the developer does not flow on the substrate, and the development of the substrate is performed uniformly within the substrate surface. In addition, as the developer discharge nozzle moves on the porous plate, the developer is continuously supplied from the porous plate onto the substrate without interruption, so that bubbles are not mixed in the developer and the development is performed. The moving speed of the liquid discharge nozzle can be increased. Therefore, the development of the substrate can be performed in a short time without any spots. Furthermore, since a negative pressure chamber can be formed in the housing, for example, the developer is contained in the porous plate in a state where the housing is at a negative pressure so that the developer does not sag from the porous plate. it can. The developer in the porous plate can be pushed out to the lower substrate side by discharging the developer from the upper developer discharge nozzle to the porous plate containing the developer. In this case, since the developer is immediately pushed out from the lower surface of the porous plate to the substrate by the discharge of the developer from the discharge port, the developer can be supplied in a short time. In addition, it is possible to prevent the developer in the porous plate from dripping to the substrate side by applying a negative pressure inside the housing. Furthermore, since the developer can be spread by sandwiching the developer between the porous plate and the substrate surface, the surface of the substrate can be maintained even if the surface of the substrate is hydrophobic or the amount of the developer is small. The developer can be spread over the entire surface. Therefore, the consumption of the developer is reduced, and development can be properly performed on any substrate.

前記筐体の多孔質板は，平面から見て少なくとも基板よりも大きい方形に形成されていてもよい。また，前記現像処理装置は，前記筐体を上下動させる筐体昇降駆動部をさらに備えていてもよい。この筐体昇降駆動部により，筐体の下面部の多孔質板と基板との距離を調整し，基板に供給される現像液の量を厳密に制御することができる。この結果，必要最小限の現像液で適正な現像を行うことができる。   The porous plate of the housing may be formed in a square shape that is at least larger than the substrate as viewed from above. In addition, the development processing apparatus may further include a casing up / down driving unit that moves the casing up and down. By this casing lifting / lowering drive unit, the distance between the porous plate on the lower surface of the casing and the substrate can be adjusted, and the amount of the developer supplied to the substrate can be strictly controlled. As a result, proper development can be performed with the minimum required developer.

前記ノズル移動機構は，前記筐体内に設けられていてもよい。この場合，ノズル移動機構が筐体内にあるので，筐体の内部を閉鎖し筐体内を陰圧にし易い。   The nozzle moving mechanism may be provided in the casing. In this case, since the nozzle moving mechanism is in the housing, it is easy to close the inside of the housing and create a negative pressure in the housing.

前記現像処理装置は，前記基板保持部材に保持された基板の外側に設けられ，前記基板の外側に落下する現像液を前記基板と同一平面上で受ける受け部材をさらに備えていてもよい。基板の外側に落下した現像液が，受け止められず基板の下方に落下すると，前記落下する現像液と繋がっている基板の端部付近の現像液も当該落下する現像液に引きずられて基板の端部からこぼれ落ちる。本発明のように基板の外側に落下する現像液を基板と同一平面上で受け止めることにより，基板の端部付近における現像液の流動が防止され，基板の端部付近においても他の基板上の部分と同様の現像を行うことができる。   The development processing apparatus may further include a receiving member that is provided outside the substrate held by the substrate holding member and receives the developing solution falling outside the substrate on the same plane as the substrate. When the developer that has fallen to the outside of the substrate is not received and falls below the substrate, the developer near the end of the substrate connected to the developer that has fallen is also dragged by the falling developer and the end of the substrate. Spills from the part. By receiving the developer falling outside the substrate on the same plane as the substrate as in the present invention, the flow of the developer near the edge of the substrate is prevented, and even on the other substrate near the edge of the substrate. Development similar to that of the portion can be performed.

前記受け部材の外形は，平面から見て少なくとも前記多孔質板よりも大きい方形に形成され，当該受け部材の中央部付近には，平面から見て基板よりも僅かに大きい開口部が形成されていてもよい。この場合，前記受け部材の開口部内に基板を配置させて，基板の外方に落ちる現像液を基板と同一平面上で受けることができる。前記現像処理装置は，前記受け部材を昇降する受け部材昇降駆動部をさらに備えていてもよい。かかる場合，受け部材を適宜基板の同一平面上から退避させて，例えば洗浄時に基板の回転により基板から飛散する現像液が受け部材に衝突しパーティクルの原因となるのを防止できる。   The outer shape of the receiving member is formed in a rectangular shape that is at least larger than the porous plate when viewed from above, and an opening that is slightly larger than the substrate when viewed from above is formed near the center of the receiving member. May be. In this case, the substrate can be disposed in the opening of the receiving member, and the developer falling outside the substrate can be received on the same plane as the substrate. The development processing apparatus may further include a receiving member raising / lowering drive unit that raises and lowers the receiving member. In such a case, the receiving member can be appropriately retracted from the same plane of the substrate, and for example, it is possible to prevent the developer scattered from the substrate due to rotation of the substrate during cleaning from colliding with the receiving member and causing particles.

前記現像液吐出ノズルの吐出口は，現像液吐出ノズルの下端面に形成され，当該現像液吐出ノズルの下端面における吐出口の周辺部には，前記多孔質板に接する水平部が形成されていてもよい。この吐出口の周辺部の水平部により，吐出口から吐出された現像液が，現像液吐出ノズルの下端面と多孔質板との間から筐体内に漏れることが防止できる。したがって，吐出口からの現像液が確実に多孔質板内に流入し，無駄になる現像液が減少して現像液の省液化が図られる。   The discharge port of the developer discharge nozzle is formed at the lower end surface of the developer discharge nozzle, and a horizontal portion in contact with the porous plate is formed at the periphery of the discharge port at the lower end surface of the developer discharge nozzle. May be. The horizontal portion around the discharge port can prevent the developer discharged from the discharge port from leaking into the housing from between the lower end surface of the developer discharge nozzle and the porous plate. Therefore, the developer from the discharge port surely flows into the porous plate, and the amount of developer that is wasted is reduced, thereby saving the developer.

前記筐体内には，複数の現像液吐出ノズルが設けられていてもよい。かかる場合，複数の現像液吐出ノズルで現像液の供給を行うことができるので，現像液の供給をより短時間で行うことができる。前記多孔質板は，多孔質板の上面から下面に近づくにつれ気孔径が小さくなるように形成されていてもよい。この場合，多孔質板の上側の気孔径が比較的大きいので，吐出口から吐出された現像液を滑らかに多孔質板内に流入させることができる。また，多孔質板の下部に行くにつれ気孔率が小さくなるので，多孔質板内において現像液の速度を徐々に減速させて，速度が十分に落ち，速度の方向が十分に拡散した後に，現像液を基板上に供給できる。   A plurality of developer discharge nozzles may be provided in the casing. In such a case, the developer can be supplied by a plurality of developer discharge nozzles, so that the developer can be supplied in a shorter time. The porous plate may be formed so that the pore diameter becomes smaller as it approaches the lower surface from the upper surface of the porous plate. In this case, since the pore diameter on the upper side of the porous plate is relatively large, the developer discharged from the discharge port can smoothly flow into the porous plate. In addition, since the porosity decreases as it goes to the bottom of the porous plate, the speed of the developer in the porous plate is gradually reduced, the speed drops sufficiently, and the direction of speed is sufficiently diffused before developing. The liquid can be supplied onto the substrate.

本発明は，請求項１〜１０のいずれかに記載の現像処理装置を用いた現像処理方法であって，陰圧室内を筐体の外部よりも陰圧にし，多孔質板内に現像液を含ませる工程と，その後，前記筐体の多孔質板を基板の表面に近接する工程と，その後，現像液吐出ノズルの吐出口から前記多孔質板に向けて現像液を吐出し，その現像液を吐出した状態の前記現像液吐出ノズルを前記多孔質板に沿って移動させることによって，前記多孔質板を通じて基板に現像液を供給する工程と，を有することを特徴とする。   The present invention is a development processing method using the development processing apparatus according to any one of claims 1 to 10, wherein the negative pressure chamber is set to a negative pressure from the outside of the casing, and the developer is put in the porous plate. And a step of bringing the porous plate of the casing close to the surface of the substrate, and then discharging the developer from the discharge port of the developer discharge nozzle toward the porous plate. And a step of supplying the developer to the substrate through the porous plate by moving the developer discharge nozzle in a state of discharging the developer along the porous plate.

この発明によれば，予め多孔質板内に現像液を含ませておくので，後工程で吐出口から多孔質板に現像液を吐出した時に，多孔質板内の現像液が直ちに押し出され，基板への現像液の供給を迅速に行うことができる。陰圧室内を陰圧にするので，多孔質板内の現像液が基板に垂れ落ちることが防止できる。現像液の供給工程では，多孔質板を通じて基板に現像液が供給されるので，多孔質板内において現像液の速度が十分に落とされる。この結果，現像液が基板上に極めて低速で供給され，基板上で現像液が流動することが防止できる。現像液が多孔質板を通過することによって，基板上に一続きの現像液が供給されるので，現像液中に気泡が混入することが防止できる。   According to this invention, since the developer is included in the porous plate in advance, when the developer is discharged from the discharge port to the porous plate in a later step, the developer in the porous plate is immediately pushed out, It is possible to rapidly supply the developer to the substrate. Since the negative pressure chamber is set to a negative pressure, the developer in the porous plate can be prevented from dripping onto the substrate. In the developing solution supply step, the developing solution is supplied to the substrate through the porous plate, so that the speed of the developing solution is sufficiently reduced in the porous plate. As a result, the developer is supplied onto the substrate at a very low speed, and the developer can be prevented from flowing on the substrate. When the developer passes through the porous plate, a continuous developer is supplied onto the substrate, so that bubbles can be prevented from being mixed into the developer.

前記多孔質板と基板との隙間に現像液を介在した状態で基板を現像してもよい。かかる場合，多孔質板と基板との隙間に現像液が広げられた状態が維持されるので，現像液を確実に基板表面の全面に接触させておくことができる。したがって，基板の現像を基板表面の全面において適正に行うことができる。なお，基板に供給される現像液の量を，前記現像液の供給時における前記多孔質板と基板との隙間により設定してもよい。かかる場合，基板への現像液の供給量を簡単に制御できる。   The substrate may be developed with a developer interposed in the gap between the porous plate and the substrate. In such a case, the state in which the developer is spread in the gap between the porous plate and the substrate is maintained, so that the developer can be reliably brought into contact with the entire surface of the substrate. Therefore, the development of the substrate can be appropriately performed on the entire surface of the substrate. The amount of the developer supplied to the substrate may be set according to the gap between the porous plate and the substrate when the developer is supplied. In such a case, the amount of developer supplied to the substrate can be easily controlled.

本発明によれば，現像液が基板上で流動しないので，基板面内において均等に安定した現像が行われ，歩留まりの向上が図られる。現像液吐出ノズルを高速で移動させても現像液中に気泡が混入しないので，現像処理時間を短縮し，スループットを向上できる。   According to the present invention, since the developer does not flow on the substrate, uniform and stable development is performed within the substrate surface, and the yield is improved. Even if the developer discharge nozzle is moved at high speed, no bubbles are mixed in the developer, so that the development processing time can be shortened and the throughput can be improved.

以下，本発明の好ましい実施の形態について説明する。図１は，本実施の形態にかかる現像処理装置が搭載された塗布現像処理システム１の構成の概略を示す平面図であり，図２は，塗布現像処理システム１の正面図であり，図３は，塗布現像処理システム１の背面図である。   Hereinafter, preferred embodiments of the present invention will be described. FIG. 1 is a plan view showing an outline of the configuration of a coating and developing treatment system 1 in which the developing treatment apparatus according to the present embodiment is mounted, and FIG. 2 is a front view of the coating and developing treatment system 1. FIG. 2 is a rear view of the coating and developing treatment system 1.

塗布現像処理システム１は，図１に示すように，例えば２５枚のウェハＷをカセット単位で外部から塗布現像処理システム１に対して搬入出したり，カセットＣに対してウェハＷを搬入出したりするカセットステーション２と，塗布現像処理工程の中で枚葉式に所定の処理を施す各種処理装置を多段配置してなる処理ステーション３と，この処理ステーション３に隣接して設けられている図示しない露光装置との間でウェハＷの受け渡しをするインターフェイス部４とを一体に接続した構成を有している。   As shown in FIG. 1, the coating and developing treatment system 1 carries, for example, 25 wafers W in and out of the coating and developing treatment system 1 from the outside in units of cassettes and carries the wafers W in and out of the cassettes C. A cassette station 2, a processing station 3 in which various processing devices for performing predetermined processing in a sheet-fed process in the coating and developing processing step are arranged in multiple stages, and an exposure (not shown) provided adjacent to the processing station 3 The interface unit 4 that transfers the wafer W to and from the apparatus is integrally connected.

カセットステーション２では，載置部となるカセット載置台５上の所定の位置に，複数のカセットＣをＸ方向（図１中の上下方向）に一列に載置自在となっている。そして，このカセット配列方向（Ｘ方向）とカセットＣに収容されたウェハＷのウェハ配列方向（Ｚ方向；鉛直方向）に対して移送可能なウェハ搬送体７が搬送路８に沿って移動自在に設けられており，各カセットＣに対して選択的にアクセスできるようになっている。   In the cassette station 2, a plurality of cassettes C can be placed in a line in a X direction (vertical direction in FIG. 1) at a predetermined position on the cassette placement table 5 serving as a placement portion. The wafer transfer body 7 that can be transferred in the cassette arrangement direction (X direction) and the wafer arrangement direction (Z direction; vertical direction) of the wafer W accommodated in the cassette C is movable along the transfer path 8. It is provided so that each cassette C can be selectively accessed.

ウェハ搬送体７は，ウェハＷの位置合わせを行うアライメント機能を備えている。このウェハ搬送体７は，後述するように処理ステーション３側の第３の処理装置群G３に属するエクステンション装置３２に対してもアクセスできるように構成されている。   The wafer carrier 7 has an alignment function for aligning the wafer W. As will be described later, the wafer carrier 7 is configured to be accessible also to the extension devices 32 belonging to the third processing device group G3 on the processing station 3 side.

処理ステーション３では，その中心部に主搬送装置１３が設けられており，この主搬送装置１３の周辺には各種処理装置が多段に配置されて処理装置群を構成している。この塗布現像処理システム１においては，４つの処理装置群G1，G2，G3，G4が配置されており，第１及び第２の処理装置群G1，G2は塗布現像処理システム１の正面側に配置され，第３の処理装置群G3は，カセットステーション２に隣接して配置され，第４の処理装置群G4は，インターフェイス部４に隣接して配置されている。さらにオプションとして破線で示した第５の処理装置群G5を背面側に別途配置可能となっている。前記主搬送装置１３は，これらの処理装置群G1，G2，G3，G4，G5に配置されている後述する各種処理装置に対して，ウェハＷを搬入出可能である。なお，処理装置群の数や配置は，ウェハＷに施される処理の種類によって異なり，任意に選択可能である。   In the processing station 3, a main transfer device 13 is provided at the center thereof, and various processing devices are arranged in multiple stages around the main transfer device 13 to form a processing device group. In this coating and developing processing system 1, four processing device groups G1, G2, G3, and G4 are arranged, and the first and second processing device groups G1 and G2 are arranged on the front side of the coating and developing processing system 1. The third processing unit group G3 is disposed adjacent to the cassette station 2, and the fourth processing unit group G4 is disposed adjacent to the interface unit 4. Further, as an option, a fifth processing unit group G5 indicated by a broken line can be separately arranged on the back side. The main transfer device 13 can carry in / out the wafer W to / from various processing devices (described later) arranged in these processing device groups G1, G2, G3, G4, and G5. The number and arrangement of processing apparatus groups vary depending on the type of processing performed on the wafer W, and can be arbitrarily selected.

第１の処理装置群G1では，例えば図２に示すようにウェハＷにレジスト液を塗布し，ウェハＷ上にレジスト膜を形成するレジスト塗布装置１７と，本実施の形態にかかる現像処理装置１８とが下から順に２段に配置されている。第２の処理装置群G2にも同様に，レジスト塗布装置１９と現像処理装置２０とが下から順に２段に配置されている。   In the first processing unit group G1, for example, as shown in FIG. 2, a resist coating unit 17 that applies a resist solution to the wafer W and forms a resist film on the wafer W, and a development processing unit 18 according to the present embodiment. Are arranged in two stages in order from the bottom. Similarly, in the second processing unit group G2, the resist coating unit 19 and the development processing unit 20 are arranged in two stages in order from the bottom.

第３の処理装置群G3では，例えば図３に示すようにウェハＷを冷却処理するクーリング装置３０，レジスト液とウェハＷとの定着性を高めるためのアドヒージョン装置３１，ウェハＷの受け渡しを行うためのエクステンション装置３２，レジスト液中の溶剤を蒸発させるためのプリベーキング装置３３，３４，現像処理後の加熱処理を行うポストベーキング装置３５が下から順に例えば６段に積み重ねられている。   In the third processing unit group G3, for example, as shown in FIG. 3, a cooling device 30 for cooling the wafer W, an adhesion device 31 for improving the fixability between the resist solution and the wafer W, and the delivery of the wafer W are performed. The extension device 32, the pre-baking devices 33 and 34 for evaporating the solvent in the resist solution, and the post-baking device 35 for performing the heat treatment after the development processing are stacked in, for example, six stages from the bottom.

第４の処理装置群G4では，例えばクーリング装置４０，載置したウェハＷを自然冷却させるエクステンション・クーリング装置４１，エクステンション装置４２，クーリング装置４３，露光後の加熱処理を行うポストエクスポージャーベーキング装置４４，４５，ポストベーキング装置４６が下から順に例えば７段に積み重ねられている。   In the fourth processing unit group G4, for example, a cooling unit 40, an extension / cooling unit 41 that naturally cools the mounted wafer W, an extension unit 42, a cooling unit 43, a post-exposure baking unit 44 that performs heat treatment after exposure, 45 and post-baking devices 46 are stacked, for example, in seven steps from the bottom.

インターフェイス部４の中央部には，図１に示すように例えばウェハ搬送体５０が設けられている。このウェハ搬送体５０はＸ方向（図１中の上下方向），Ｚ方向（垂直方向）の移動とθ方向（Ｚ軸を中心とする回転方向）の回転が自在にできるように構成されており，第４の処理装置群G4に属するエクステンション・クーリング装置４１，エクステンション装置４２，周辺露光装置５１及び図示しない露光装置に対してアクセスして，各々に対してウェハＷを搬送できるように構成されている。   For example, a wafer carrier 50 is provided at the center of the interface unit 4 as shown in FIG. The wafer carrier 50 is configured to be freely movable in the X direction (vertical direction in FIG. 1) and Z direction (vertical direction) and rotated in the θ direction (rotating direction around the Z axis). , Access to the extension / cooling device 41, the extension device 42, the peripheral exposure device 51 and the exposure device (not shown) belonging to the fourth processing unit group G4, and the wafer W can be transferred to each of them. Yes.

次に，上述した現像処理装置１８の構成について詳しく説明する。図４に示すように現像処理装置１８のケーシング１８ａ内の中央部には，ウェハＷを保持する基板保持部材としてのスピンチャック６０が設けられている。スピンチャック６０は，水平の上面を有し，当該上面には，例えばウェハＷを吸引する吸引口（図示せず）が設けられている。この吸引口からの吸引により，スピンチャック６０は，ウェハＷを水平に吸着保持できる。   Next, the configuration of the development processing apparatus 18 described above will be described in detail. As shown in FIG. 4, a spin chuck 60 as a substrate holding member for holding the wafer W is provided at the center in the casing 18 a of the development processing apparatus 18. The spin chuck 60 has a horizontal upper surface, and a suction port (not shown) for sucking, for example, the wafer W is provided on the upper surface. By suction from the suction port, the spin chuck 60 can hold the wafer W by suction.

スピンチャック６０には，例えばスピンチャック６０を回転及び昇降させるためのチャック駆動機構６１が設けられている。チャック駆動機構６１は，例えばスピンチャック６０を鉛直方向の軸周りに所定速度で回転させるモータなどの回転駆動部（図示せず）や，スピンチャック６０を所定距離昇降させるモータ又はシリンダなどの昇降駆動部（図示せず）を備えている。このチャック駆動機構６１により，例えばウェハＷの搬入出時にウェハＷを昇降させたり，ウェハＷの洗浄時にウェハＷを回転させたりできる。   The spin chuck 60 is provided with a chuck drive mechanism 61 for rotating and lifting the spin chuck 60, for example. The chuck drive mechanism 61 is, for example, a rotation drive unit (not shown) such as a motor that rotates the spin chuck 60 around a vertical axis at a predetermined speed, or a lift drive such as a motor or cylinder that moves the spin chuck 60 up and down a predetermined distance. Part (not shown). With this chuck drive mechanism 61, for example, the wafer W can be moved up and down when the wafer W is loaded and unloaded, and the wafer W can be rotated when the wafer W is cleaned.

スピンチャック６０の周囲には，ウェハＷから飛散又は落下する液体を受け止め，回収するカップ６２が設けられている。カップ６２は，例えばスピンチャック６０の側方を取り囲み，主にウェハＷの外方に飛散する液体を受け止める側壁部６３と，ウェハＷの下方を覆い，主にウェハＷから落下する液体を受け止める底部６４とを別個に有している。   Around the spin chuck 60, there is provided a cup 62 that receives and collects the liquid scattered or dropped from the wafer W. The cup 62 surrounds, for example, the side of the spin chuck 60 and mainly receives a side wall portion 63 that receives liquid scattered outside the wafer W, and a bottom portion that covers the lower side of the wafer W and mainly receives liquid falling from the wafer W. 64 separately.

側壁部６３は，例えば図５に示すように平面から見て四角形の略筒状に形成されている。側壁部６３は，図４に示すように例えばシリンダなどの昇降駆動部６５によって上下動できる。底部６４には，中央部にスピンチャック６０が貫通している。スピンチャック６０の周囲には，ウェハＷの表面から裏面に回り込んだ液体の流れを遮断する環状部材６６が設けられている。環状部材６６は，例えばウェハＷの裏面に近接する頂上部を備えており，その頂上部で液体の流れを遮断する。底部６４には，例えば排出管６７が接続されており，カップ６２において回収した液体は，排出管６７から現像処理装置１８の外部に排出できる。   For example, as shown in FIG. 5, the side wall 63 is formed in a substantially rectangular shape when viewed from above. As shown in FIG. 4, the side wall 63 can be moved up and down by an elevating drive unit 65 such as a cylinder. A spin chuck 60 passes through the bottom 64 at the center. An annular member 66 is provided around the spin chuck 60 to block the flow of liquid that has flowed from the front surface to the back surface of the wafer W. The annular member 66 has, for example, a top near the back surface of the wafer W, and blocks the liquid flow at the top. For example, a discharge pipe 67 is connected to the bottom portion 64, and the liquid collected in the cup 62 can be discharged from the discharge pipe 67 to the outside of the development processing apparatus 18.

スピンチャック６０の上方には，外形が略直方体形状の筐体７０が配置されている。筐体７０は，内部が密閉可能に構成されており，筐体７０内には，陰圧室Ｓが形成されている。筐体７０は，平面から見てウェハＷよりも大きく形成され，筐体７０の下面部は，スピンチャック６０に保持されたウェハＷに対向し，ウェハＷの上面を覆っている。   Above the spin chuck 60, a casing 70 having a substantially rectangular parallelepiped shape is disposed. The housing 70 is configured so that the inside can be sealed, and a negative pressure chamber S is formed in the housing 70. The housing 70 is formed larger than the wafer W when viewed from above, and the lower surface portion of the housing 70 faces the wafer W held by the spin chuck 60 and covers the upper surface of the wafer W.

筐体７０の下面部は，液体を通流できる多孔質板７１で形成されている。多孔質板７１の材質は，例えばテフロン（デュポン社の登録商標），ＰＰ（ポリプロピレン）などの樹脂やステンレス鋼，アルミナ，チタン，グラスファイバーなどの金属であり，気孔率が５〜５０％程度で，気孔径が０．０１〜０．５ｍｍ程度のものが用いられている。多孔質板７１の厚みは，例えば０．５〜５ｍｍ程度に設定されている。   The lower surface portion of the housing 70 is formed of a porous plate 71 through which liquid can flow. The material of the porous plate 71 is, for example, a resin such as Teflon (registered trademark of DuPont), PP (polypropylene), or a metal such as stainless steel, alumina, titanium, glass fiber, and the porosity is about 5 to 50%. The one having a pore diameter of about 0.01 to 0.5 mm is used. The thickness of the porous plate 71 is set to about 0.5 to 5 mm, for example.

筐体７０内であって，多孔質板７１上には，現像液吐出ノズル７２が設けられている。図５に示すように現像液吐出ノズル７２は，例えばＸ方向（図５の上下方向）に向けてウェハＷの直径よりも長い細長形状を有し，その下端面には，図６に示すように長手方向に沿ったスリット状の吐出口７３が形成されている。図４に示すように吐出口７３は，多孔質板７１の上面に近接している。例えば現像液吐出ノズル７２の上部には，現像処理装置１８の外部に設置された現像液供給源７４に連通する現像液供給管７５が接続されている。現像液供給源７４から現像液供給管７５を通じて現像液吐出ノズル７２に供給された現像液は，現像液吐出ノズル７２の内部を通過して吐出口７３から多孔質板７１内に吐出される。   A developer discharge nozzle 72 is provided in the casing 70 and on the porous plate 71. As shown in FIG. 5, the developer discharge nozzle 72 has an elongated shape that is longer than the diameter of the wafer W in the X direction (vertical direction in FIG. 5), for example, and has a lower end surface as shown in FIG. A slit-like discharge port 73 is formed along the longitudinal direction. As shown in FIG. 4, the discharge port 73 is close to the upper surface of the porous plate 71. For example, a developer supply pipe 75 communicating with a developer supply source 74 installed outside the development processing apparatus 18 is connected to the upper portion of the developer discharge nozzle 72. The developer supplied from the developer supply source 74 to the developer discharge nozzle 72 through the developer supply pipe 75 passes through the developer discharge nozzle 72 and is discharged from the discharge port 73 into the porous plate 71.

例えば筐体７０の内側の上面には，現像液吐出ノズル７２を移動させるノズル移動機構８０が取り付けられている。ノズル移動機構８０は，例えば吐出口７３のスリット方向（Ｘ方向：図４の奥行き方向）と直交するＹ方向（図４の左右方向）に向けて形成されたレール８１と，現像液吐出ノズル７２をレール８１に沿って移動させるノズル駆動部８２を備えている。レール８１は，例えば筐体７０内のＹ方向の一端部付近から他端部付近まで形成されている。したがって，現像液吐出ノズル７２は，吐出口７３を多孔質板７１に近接させた状態で，筐体７０内のＹ方向の両側壁間を往復移動できる。   For example, a nozzle moving mechanism 80 for moving the developer discharge nozzle 72 is attached to the upper surface inside the housing 70. The nozzle moving mechanism 80 includes, for example, a rail 81 formed in the Y direction (left and right direction in FIG. 4) orthogonal to the slit direction (X direction: depth direction in FIG. 4) of the discharge port 73, and the developer discharge nozzle 72. Is provided with a nozzle driving unit 82 for moving the nozzles along the rails 81. The rail 81 is formed from, for example, the vicinity of one end in the Y direction in the housing 70 to the vicinity of the other end. Therefore, the developer discharge nozzle 72 can reciprocate between both side walls in the Y direction in the housing 70 in a state where the discharge port 73 is close to the porous plate 71.

筐体７０の側面には，例えば排気管９０が接続されている。排気管９０は，例えば現像処理装置１８の外部に設置された負圧発生装置９１に連通しており，筐体７０内の気体を排気して，筐体７０内を所定の圧力に減圧することができる。   For example, an exhaust pipe 90 is connected to the side surface of the housing 70. The exhaust pipe 90 communicates with, for example, a negative pressure generating device 91 installed outside the development processing device 18, and exhausts the gas in the housing 70 to reduce the inside of the housing 70 to a predetermined pressure. Can do.

筐体７０は，例えば上方からアーム１００によって支持されている。アーム１００は，例えばカップ６２の外部に設置されたシリンダなどの筐体昇降駆動部１０１によって昇降できる。したがって，筐体７０は，スピンチャック６０上で昇降できる。筐体昇降駆動部１０１の動作は，例えば隙間制御部１０２によって制御されている。隙間制御部１０２には，ウェハＷへの現像液の最適供給量に基づいて求められた，筐体７０とウェハＷとの隙間Ｄが設定されており，隙間制御部１０２は，その設定隙間Ｄに基づいて筐体７０の高さを調整できる。   The housing 70 is supported by the arm 100 from above, for example. The arm 100 can be moved up and down by a casing lifting drive unit 101 such as a cylinder installed outside the cup 62, for example. Therefore, the housing 70 can be moved up and down on the spin chuck 60. The operation of the case elevating drive unit 101 is controlled by, for example, the gap control unit 102. The gap control unit 102 is set with a gap D between the housing 70 and the wafer W obtained based on the optimum supply amount of the developer to the wafer W. The gap control unit 102 sets the set gap D. Based on this, the height of the housing 70 can be adjusted.

カップ６２内には，スピンチャック６０に保持されたウェハＷの外側に供給される現像液を受ける受け部材としての受け板１１０が設けられている。受け板１１０は，図７に示すように平面から見て筐体７０の多孔質板７１よりも大きい方形に形成されている。受け板１１０の中央部には，平面から見たウェハＷの形状よりも僅かに大きい円形の開口部１１１が形成されている。例えば開口部１１１の半径は，例えばウェハＷの半径よりも０．１ｍｍ〜１ｍｍ程度大きく形成されている。受け板１１０は，当該開口部１１１が平面から見てスピンチャック６０上のウェハＷの位置に一致するように配置されている。受け板１１０には，図４に示すようにシリンダなどからなる受け板昇降駆動部１１２が取り付けられており，受け板１１０は，スピンチャック６０上のウェハＷと同一平面上に位置したり，ウェハＷよりも低い位置に退避したりすることができる。   In the cup 62, a receiving plate 110 is provided as a receiving member that receives the developer supplied to the outside of the wafer W held by the spin chuck 60. As shown in FIG. 7, the receiving plate 110 is formed in a square shape that is larger than the porous plate 71 of the housing 70 when viewed from above. A circular opening 111 that is slightly larger than the shape of the wafer W as viewed from above is formed at the center of the receiving plate 110. For example, the radius of the opening 111 is formed to be about 0.1 mm to 1 mm larger than the radius of the wafer W, for example. The receiving plate 110 is disposed so that the opening 111 coincides with the position of the wafer W on the spin chuck 60 when viewed from the top. As shown in FIG. 4, the receiving plate 110 is attached with a receiving plate raising / lowering drive unit 112 made of a cylinder or the like. The receiving plate 110 is positioned on the same plane as the wafer W on the spin chuck 60, or Or retreat to a position lower than W.

例えば図５に示すように，カップ６２のＸ方向正方向側の外方には，Ｙ方向に沿ったレール１２０が形成されている。レール１２０は，例えばカップ６２のＹ方向負方向（図５の左方向）側の外方からスピンチャック６０の中央付近まで形成されている。レール１２０には，洗浄液供給ノズル１２１を保持するリンスアーム１２２が取り付けられている。リンスアーム１２２は，駆動部１２３によってレール１２０に沿って移動できる。したがって，洗浄液供給ノズル１２１は，カップ６２の外方からスピンチャック６０のウェハＷの上方まで移動できる。   For example, as shown in FIG. 5, a rail 120 along the Y direction is formed outside the cup 62 on the X direction positive direction side. The rail 120 is formed, for example, from the outside of the cup 62 in the negative Y direction (left direction in FIG. 5) to the vicinity of the center of the spin chuck 60. A rinse arm 122 that holds the cleaning liquid supply nozzle 121 is attached to the rail 120. The rinse arm 122 can be moved along the rail 120 by the driving unit 123. Therefore, the cleaning liquid supply nozzle 121 can move from the outside of the cup 62 to above the wafer W of the spin chuck 60.

次に，以上のように構成されている現像処理装置１８の作用を，塗布現像処理システム１で行われるフォトリソグラフィー工程のプロセスと共に説明する。   Next, the operation of the development processing apparatus 18 configured as described above will be described together with the process of the photolithography process performed in the coating and developing processing system 1.

先ず，ウェハ搬送体７によりカセットＣから未処理のウェハＷが１枚取り出され，第３の処理装置群G3に属するエクステンション装置３２に搬送される。次にウェハＷは，主搬送装置１３によってアドヒージョン装置３１に搬入され，ウェハＷに対し，レジスト液の密着性を向上させる例えばHMDSが塗布される。次にウェハＷは，クーリング装置３０に搬送され，所定の温度に冷却された後，レジスト塗布装置１７に搬送される。レジスト塗布装置１７においてレジスト膜が形成されたウェハＷは，主搬送装置１３によってプリベーキング装置３３，エクステンション・クーリング装置４１に順次搬送され，さらにウェハ搬送体５０によって，周辺露光装置５１，露光装置（図示せず）に順次搬送され，各装置で所定の処理が施される。露光処理の終了したウェハＷは，ウェハ搬送体５０によりエクステンション装置４２に搬送され，その後ポストエクスポージャーベーキング装置４４，クーリング装置４３で所定の処理が施された後，現像処理装置１８に搬送されて，現像処理が行われる。   First, one unprocessed wafer W is taken out from the cassette C by the wafer transfer body 7 and transferred to the extension device 32 belonging to the third processing unit group G3. Next, the wafer W is carried into the adhesion device 31 by the main transfer device 13, and for example, HMDS for improving the adhesion of the resist solution is applied to the wafer W. Next, the wafer W is transferred to the cooling device 30, cooled to a predetermined temperature, and then transferred to the resist coating device 17. The wafer W on which the resist film is formed in the resist coating device 17 is sequentially transferred to the pre-baking device 33 and the extension / cooling device 41 by the main transfer device 13, and further, the peripheral transfer device 51 and the exposure device ( (Not shown) are sequentially conveyed, and predetermined processing is performed in each device. The wafer W that has undergone the exposure processing is transferred to the extension device 42 by the wafer transfer body 50, and then subjected to predetermined processing by the post-exposure baking device 44 and the cooling device 43, and then transferred to the development processing device 18. Development processing is performed.

現像処理装置１８において現像処理の終了したウェハＷは，ポストベーキング装置４６，クーリング装置３０に順次搬送され，各装置において所定の処理が施され，その後，エクステンション装置３２を介してカセットＣに戻されて，一連のフォトリソグラフィー工程が終了する。   The wafer W that has undergone development processing in the development processing device 18 is sequentially transferred to the post-baking device 46 and the cooling device 30, subjected to predetermined processing in each device, and then returned to the cassette C via the extension device 32. Thus, a series of photolithography processes is completed.

次に，上述した現像処理装置１８で行われるウェハＷの現像処理について詳しく説明する。塗布現像処理システム１の起動前には，筐体７０は，筐体昇降駆動部１０１によってカップ６２の上方で待機している。そして塗布現像処理システム１が起動されると，排気管９０を通じて筐体７０内の雰囲気が排気され，筐体７０内が，例えば１０〜１００Ｐａ程度の陰圧に減圧される。筐体７０内が陰圧になると，現像液吐出ノズル７２から現像液が吐出され，現像液吐出ノズル７２が多孔質板７１のＹ方向負方向側の端部（以下「一端部」とする。）からＹ方向正方向側の端部（以下，「他端部」とする。）まで移動する。こうすることによって，乾燥状態の多孔質板７１中に現像液が供給される。多孔質板７１中に供給された現像液は，筐体７０内の陰圧によって，下から垂れ落ちることなく多孔質板７１内に維持される。   Next, the development processing of the wafer W performed by the development processing apparatus 18 described above will be described in detail. Prior to activation of the coating and developing treatment system 1, the housing 70 stands by above the cup 62 by the housing elevating drive unit 101. When the coating and developing treatment system 1 is activated, the atmosphere in the housing 70 is exhausted through the exhaust pipe 90, and the inside of the housing 70 is reduced to a negative pressure of about 10 to 100 Pa, for example. When the inside of the housing 70 has a negative pressure, the developer is discharged from the developer discharge nozzle 72, and the developer discharge nozzle 72 is referred to as an end of the porous plate 71 on the Y direction negative direction side (hereinafter referred to as “one end”). ) To the end on the positive side in the Y direction (hereinafter referred to as “other end”). By doing so, the developer is supplied into the porous plate 71 in a dry state. The developer supplied into the porous plate 71 is maintained in the porous plate 71 without dripping from the bottom due to the negative pressure in the housing 70.

塗布現像処理システム１においてウェハＷの処理が開始され，現像処理装置１８内にウェハＷが搬送されると，先ず，ウェハＷは，予め上昇して待機していたスピンチャック６０に保持される。続いてスピンチャック６０が下降し，ウェハＷが図４に示すようにカップ６２内の所定位置に収容される。   When the processing of the wafer W is started in the coating and developing processing system 1 and the wafer W is transported into the developing processing apparatus 18, first, the wafer W is held on the spin chuck 60 that has been lifted and waited in advance. Subsequently, the spin chuck 60 is lowered and the wafer W is accommodated in a predetermined position in the cup 62 as shown in FIG.

その後，筐体７０は，筐体昇降駆動部１０１によって下降し，図８に示すように筐体７０の多孔質板７１とウェハＷとの隙間Ｄが，０．５〜３．０ｍｍ程度に調整される。後にこの隙間Ｄに介在されてウェハＷに供給される現像液の供給量は，この隙間Ｄによって設定される。   Thereafter, the housing 70 is lowered by the housing lifting / lowering drive unit 101, and the gap D between the porous plate 71 of the housing 70 and the wafer W is adjusted to about 0.5 to 3.0 mm as shown in FIG. Is done. The supply amount of the developer that is supplied to the wafer W after being interposed in the gap D is set by the gap D.

例えば筐体７０が下降するのに同期して，受け板１１０は，図４に示すように受け板昇降駆動部１１２によってウェハＷと同一平面上まで上昇し，ウェハＷの外周に配置される。   For example, in synchronization with the lowering of the housing 70, the receiving plate 110 is raised to the same plane as the wafer W by the receiving plate raising / lowering driving unit 112 as shown in FIG.

こうして筐体７０が下降し，受け板１１０が上昇すると，続いて図８に示すように筐体７０内の現像液吐出ノズル７２が例えば多孔質板７１の一端部上において吐出口７３から現像液を吐出する。この現像液の吐出によって，吐出口７３に対応する部分の多孔質板７１中の現像液が加圧され，現像液が多孔質板７１の下面から押し出されて，例えばウェハＷのＹ方向負方向側の受け板１１０上に現像液が線上に塗布される。その後，図９に示すように現像液吐出ノズル７２から現像液を吐出した状態で，現像液吐出ノズル７２が多孔質板７１の一端部上から他端部上まで移動する。この際，現像液吐出ノズル７２から吐出された現像液が多孔質板７１中に現像液を押し出して，一続きに繋がった現像液がウェハＷ上に連続的に供給される。この多孔質板７１内から押し出される現像液は，多孔質板７１内を通る際に減速し，ウェハＷ上には極めて静的に供給される。こうして現像液吐出ノズル７２が多孔質板７１の他端部上まで移動すると，図１０に示すようにウェハＷと多孔質板７１との間に現像液が満たされ，ウェハＷの全面に所望の量の現像液が供給される。なお，ウェハＷの外側に供給された現像液は，受け板１１０で受けられ，受け板１１０と多孔質板７１との間に挟まれる。したがって，ウェハＷの外方においても現像液の流動が防止される。   When the housing 70 is lowered and the receiving plate 110 is raised, the developer discharge nozzle 72 in the housing 70 is subsequently supplied from the discharge port 73 on the one end portion of the porous plate 71 as shown in FIG. Is discharged. By this discharge of the developing solution, the developing solution in the porous plate 71 corresponding to the discharge port 73 is pressurized, and the developing solution is pushed out from the lower surface of the porous plate 71, for example, the negative direction of the wafer W in the Y direction The developer is applied on the line on the side receiving plate 110. Thereafter, as shown in FIG. 9, the developer discharge nozzle 72 moves from one end of the porous plate 71 to the other end while the developer is discharged from the developer discharge nozzle 72. At this time, the developer discharged from the developer discharge nozzle 72 pushes the developer into the porous plate 71, and the continuous developer is continuously supplied onto the wafer W. The developer pushed out from the inside of the porous plate 71 is decelerated when passing through the porous plate 71 and is supplied onto the wafer W very statically. When the developer discharge nozzle 72 moves to the other end of the porous plate 71 in this way, the developer is filled between the wafer W and the porous plate 71 as shown in FIG. An amount of developer is supplied. The developer supplied to the outside of the wafer W is received by the receiving plate 110 and is sandwiched between the receiving plate 110 and the porous plate 71. Therefore, the flow of the developer is prevented even outside the wafer W.

現像液吐出ノズル７２は，多孔質板７１の他端部上に到達すると停止し，その時吐出口７３からの吐出も停止される。その後，多孔質板７１とウェハＷとの間に現像液を介在した状態で，ウェハＷは所定時間静止現像される。   When the developer discharge nozzle 72 reaches the other end of the porous plate 71, the developer discharge nozzle 72 is stopped. At that time, the discharge from the discharge port 73 is also stopped. Thereafter, the wafer W is statically developed for a predetermined time with a developer interposed between the porous plate 71 and the wafer W.

所定時間が経過し，静止現像が終了すると，筐体７０は，カップ６２の上方まで上昇し，現像液吐出ノズル７２は，多孔質板７１の一端部側に戻される。受け板１１０は，ウェハＷよりも低い位置に下げられる。その後，洗浄液供給ノズル１２１がカップ６２の外方からウェハＷの中心部の上方まで移動し，カップ６２の側壁部６３が昇降駆動部６５によって上昇される。ウェハＷは，スピンチャック６０により回転され，当該ウェハＷの中心部に洗浄液供給ノズル１２１から洗浄液が供給されてウェハＷが洗浄される。この洗浄工程時においても筐体７０内の陰圧は維持され，多孔質板７１中にある現像液の落下を防止している。   When the predetermined time has elapsed and the stationary development is completed, the casing 70 is raised above the cup 62, and the developer discharge nozzle 72 is returned to the one end side of the porous plate 71. The receiving plate 110 is lowered to a position lower than the wafer W. Thereafter, the cleaning liquid supply nozzle 121 moves from the outside of the cup 62 to above the center portion of the wafer W, and the side wall portion 63 of the cup 62 is raised by the elevating drive unit 65. The wafer W is rotated by the spin chuck 60, and the cleaning liquid is supplied from the cleaning liquid supply nozzle 121 to the center of the wafer W to clean the wafer W. Even during this cleaning process, the negative pressure in the housing 70 is maintained, and the developer in the porous plate 71 is prevented from falling.

洗浄液供給ノズル１２１からの洗浄液の供給が停止され，ウェハＷの洗浄が終了すると，ウェハＷの回転が維持されて，ウェハＷが振り切り乾燥される。ウェハＷが乾燥されると，ウェハＷの回転が停止され，スピンチャック６０が上昇して，ウェハＷが主搬送装置１３に受け渡される。ウェハＷは，主搬送装置１３により現像処理装置１８外に搬出されて一連の現像処理が終了する。   When the supply of the cleaning liquid from the cleaning liquid supply nozzle 121 is stopped and the cleaning of the wafer W is completed, the rotation of the wafer W is maintained and the wafer W is shaken and dried. When the wafer W is dried, the rotation of the wafer W is stopped, the spin chuck 60 is raised, and the wafer W is delivered to the main transfer device 13. The wafer W is carried out of the development processing device 18 by the main transfer device 13 and a series of development processing is completed.

以上の実施の形態によれば，現像液吐出ノズル７２から吐出される現像液が多孔質板７１内で減速してからウェハＷ上に供給されるので，現像液がウェハＷ上で流動することが無い。この結果，ウェハＷの現像が現像液の流動の影響を受けずに安定し，ウェハ面内で均等に行われる。ウェハＷ上に供給される現像液は，多孔質板７１から連続的に押し出されるので，現像液中に気泡が混入することがなく，気泡による現像斑が防止できる。現像液が多孔質板７１とウェハＷとの間に挟み込まれるので，少量の現像液でもウェハＷの全面に広げられる。それ故現像液の消費量を低減することができる。また，ウェハ表面が疎水性であっても，現像液をウェハＷの全面に広げることができるので，あらゆる種類のウェハであっても現像を適正に行うことができる。さらに，現像液は，目の細かい多孔質板７１を通過するので，現像液中に含まれる不純物を多孔質板７１において除去することもできる。   According to the above embodiment, since the developer discharged from the developer discharge nozzle 72 is decelerated in the porous plate 71 and then supplied onto the wafer W, the developer flows on the wafer W. There is no. As a result, the development of the wafer W is stabilized without being affected by the flow of the developer, and is performed uniformly within the wafer surface. Since the developer supplied onto the wafer W is continuously pushed out from the porous plate 71, bubbles are not mixed in the developer, and development spots due to the bubbles can be prevented. Since the developer is sandwiched between the porous plate 71 and the wafer W, even a small amount of developer can be spread over the entire surface of the wafer W. Therefore, the consumption of the developer can be reduced. Further, even when the wafer surface is hydrophobic, the developer can be spread over the entire surface of the wafer W, so that development can be performed properly even for all types of wafers. Furthermore, since the developer passes through the fine porous plate 71, impurities contained in the developer can be removed by the porous plate 71.

筐体７０には，筐体昇降駆動部１０１が設けられたので，多孔質板７１とウェハＷとの隙間Ｄを調整してウェハＷへの現像液の供給量を制御できる。筐体７０に排気管９０を接続し，筐体７０内を陰圧にしたので，多孔質板７１中に現像液が保持され，現像液の液垂れを防止できる。また，多孔質板７１中に現像液を含ませておいて，吐出口７３から現像液を吐出できるので，多孔質板７１から直ちに現像液が押し出され，ウェハＷへの現像液の供給を迅速に行うことができる。   Since the case 70 is provided with the case elevating drive unit 101, the supply amount of the developer to the wafer W can be controlled by adjusting the gap D between the porous plate 71 and the wafer W. Since the exhaust pipe 90 is connected to the housing 70 and the inside of the housing 70 is set to a negative pressure, the developer is held in the porous plate 71, and dripping of the developer can be prevented. Further, since the developer is contained in the porous plate 71 and the developer can be discharged from the discharge port 73, the developer is immediately pushed out from the porous plate 71, so that the supply of the developer to the wafer W can be performed quickly. Can be done.

ノズル移動機構８０が筐体７０内に設けられたので，陰圧室Ｓの密閉しやすく，筐体７０内を容易に陰圧状態に維持できる。なお。ノズル移動機構８０は，筐体７０の外側に設けられてもよい。カップ６２内には，受け板１１０が設けられたので，ウェハＷの外側に供給される現像液をウェハＷと同一平面上で受け止め，ウェハＷの端部における現像液の流れを防止できる。この結果，ウェハＷの端部においても現像液の流動が防止され，安定した現像が行われる。受け板１１０には，受け板昇降駆動部１１２が設けられたので，現像工程時以外の例えば洗浄工程，乾燥工程時に受け板１１０はウェハＷよりも低い位置に退避できる。こうすることによって，回転されたウェハＷから飛散する液体が受け板１１０に衝突して起こるパーティクルの発生を防止できる。   Since the nozzle moving mechanism 80 is provided in the housing 70, the negative pressure chamber S can be easily sealed, and the inside of the housing 70 can be easily maintained in a negative pressure state. Note that. The nozzle moving mechanism 80 may be provided outside the housing 70. Since the receiving plate 110 is provided in the cup 62, the developer supplied to the outside of the wafer W can be received on the same plane as the wafer W, and the flow of the developer at the end of the wafer W can be prevented. As a result, the flow of the developer is also prevented at the edge of the wafer W, and stable development is performed. Since the receiving plate 110 is provided with the receiving plate lifting / lowering drive unit 112, the receiving plate 110 can be retracted to a position lower than the wafer W during, for example, a cleaning process and a drying process other than during the development process. By doing so, it is possible to prevent the generation of particles caused by the liquid scattered from the rotated wafer W colliding with the receiving plate 110.

以上の実施の形態で記載した現像処理装置１８の現像液吐出ノズル７２は，図１１に示すように現像液吐出ノズル１３０の下端面１３１が平坦に形成され，その下端面１３１の中央部に吐出口１３１ａが開口し，その周辺に水平部１３１ｂが形成されていてもよい。水平部１３１ｂは，例えば吐出口１３１ａの径の５倍程度の長さを有するように形成される。現像液吐出ノズル１３０の下端面１３１，つまり吐出口１３１ａと水平部１３１ｂは，上記実施の形態と同様に多孔質板７１の上面に近接している。そして，ウェハＷに現像液を供給する際には，水平部１３１ｂを多孔質板７１に近接させた状態で，吐出口１３１ａから多孔質板７１に向けて現像液が吐出される。こうすることによって，吐出口１３１ａから吐出された現像液が下端面１３１と多孔質板７１との隙間から筐体７０内に流出することが防止され，現像液が効率的に多孔質板７１内に流入する。この結果，筐体７０内に溜まって無駄になる現像液が減少し，現像液の省液化が図られる。なお，この例において水平部１３１ｂは多孔質板７１に近接していたが，接触していてもよい。   In the developer discharge nozzle 72 of the development processing apparatus 18 described in the above embodiment, the lower end surface 131 of the developer discharge nozzle 130 is formed flat as shown in FIG. The outlet 131a may be opened and a horizontal portion 131b may be formed around the outlet 131a. The horizontal portion 131b is formed to have a length that is, for example, about five times the diameter of the discharge port 131a. The lower end surface 131 of the developer discharge nozzle 130, that is, the discharge port 131a and the horizontal portion 131b are close to the upper surface of the porous plate 71 as in the above embodiment. When supplying the developing solution to the wafer W, the developing solution is discharged from the discharge port 131 a toward the porous plate 71 with the horizontal portion 131 b being close to the porous plate 71. By doing so, the developer discharged from the discharge port 131a is prevented from flowing into the housing 70 through the gap between the lower end surface 131 and the porous plate 71, and the developer is efficiently contained in the porous plate 71. Flow into. As a result, the amount of the developer that is accumulated in the casing 70 and is wasted is reduced, and the developer can be saved. In this example, the horizontal portion 131b is close to the porous plate 71, but may be in contact therewith.

前記実施の形態では，筐体７０内に一つの現像液吐出ノズル７２が設けられていたが，筐体７０内に複数，例えば二つの現像液吐出ノズルが設けられていてもよい。図１２は，かかる一例を示すものであり，筐体７０内に二つの第１及び第２の現像液吐出ノズル１５０，１５１が設けられている。第１及び第２の現像液吐出ノズル１５０，１５１は，例えば筐体７０の上面に設けられたＹ方向に沿った共通のレール１５２に取り付けられている。この例では，例えば第１の現像液吐出ノズル１５０がＹ方向負方向側に設けられ，第２の現像液吐出ノズル１５１がＹ方向正方向側に設けられている。現像液吐出ノズル１５０，１５１は，例えば各駆動部１５３，１５４によりレール１５２に沿って移動できる。なお，この例におけるノズル移動機構は，レール１５２と駆動部１５３，１５４によって構成されている。第１の現像液吐出ノズル１５０の吐出口１５５は，例えば第１の現像液吐出ノズル１５０の鉛直方向の中心軸よりもＹ方向正方向側に形成され，第２の現像液吐出ノズル１５１の吐出口１５６は，例えば第２の現像液吐出ノズル１５１の鉛直方向の中心軸よりもＹ方向負方向側に形成されている。つまり，第１の現像液吐出ノズル１５０と第２の現像液吐出ノズル１５１が筐体７０の中央部に並列された時に，吐出口１５５と吐出口１５６が近接するようになっている。   In the above-described embodiment, one developer discharge nozzle 72 is provided in the housing 70. However, a plurality of, for example, two developer discharge nozzles may be provided in the housing 70. FIG. 12 shows such an example, and two first and second developer discharge nozzles 150 and 151 are provided in the housing 70. The first and second developer discharge nozzles 150 and 151 are attached to a common rail 152 along the Y direction provided on the upper surface of the housing 70, for example. In this example, for example, the first developer discharge nozzle 150 is provided on the Y direction negative direction side, and the second developer discharge nozzle 151 is provided on the Y direction positive direction side. The developer discharge nozzles 150 and 151 can be moved along the rails 152 by the drive units 153 and 154, for example. In addition, the nozzle moving mechanism in this example is configured by a rail 152 and driving units 153 and 154. The discharge port 155 of the first developer discharge nozzle 150 is formed, for example, on the positive side in the Y direction with respect to the central axis in the vertical direction of the first developer discharge nozzle 150, and is discharged from the second developer discharge nozzle 151. For example, the outlet 156 is formed on the Y direction negative direction side of the vertical center axis of the second developer discharge nozzle 151. That is, when the first developer discharge nozzle 150 and the second developer discharge nozzle 151 are juxtaposed in the central portion of the housing 70, the discharge port 155 and the discharge port 156 are close to each other.

そして，ウェハＷに現像液を供給する際には，第１及び第２の現像液吐出ノズル１５０，１５１が多孔質板７１上の中央部，つまり多孔質板７１を挟んでスピンチャック６０上のウェハＷの中央部に対向する位置に，互いに近接して配置される。そして，第１及び第２の現像液吐出ノズル１５０及び１５１から現像液が吐出され，第１の現像液吐出ノズル１５０は，多孔質板７１の中央部からＹ方向負方向側の端部まで，第２の現像液吐出ノズル１５１は，多孔質板７１の中央部からＹ方向正方向側の端部まで移動する。こうして，多孔質板７１の下方のウェハＷの全面に現像液が供給される。かかる場合，二つの第１及び第２の現像液吐出ノズル１５０，１５１を用いて現像液が供給されるので，現像液の供給工程の時間が短縮され，現像処理の処理効率を向上できる。なお，現像液吐出ノズルの数は，二つに限られず，三以上であってもよい。   When supplying the developer to the wafer W, the first and second developer discharge nozzles 150 and 151 are located on the center of the porous plate 71, that is, on the spin chuck 60 with the porous plate 71 interposed therebetween. The wafers W are arranged close to each other at positions facing the central portion of the wafer W. Then, the developer is discharged from the first and second developer discharge nozzles 150 and 151, and the first developer discharge nozzle 150 extends from the center portion of the porous plate 71 to the end portion on the Y direction negative side, The second developer discharge nozzle 151 moves from the center of the porous plate 71 to the end on the Y direction positive direction side. Thus, the developer is supplied to the entire surface of the wafer W below the porous plate 71. In such a case, since the developer is supplied using the two first and second developer discharge nozzles 150 and 151, the time required for the developer supply process can be shortened and the processing efficiency of the development process can be improved. The number of developer discharge nozzles is not limited to two, and may be three or more.

以上の実施の形態では，多孔質板７１の全体を同じ特性の多孔質材料で形成していたが，多孔質板７１に複数の素材を用いて多孔質板７１の上面から下面に近づくにつれ気孔径が小さくなるようにしてもよい。例えば図１３に示すように多孔質板１６０は，三層構造を有し，上層１６０ａの素材に気孔径が０．５ｍｍ程度で気孔率が５０％程度の多孔質材料を用い，中層１６０ｂの素材に気孔径が０．２ｍｍ程度で気孔率が２０％程度の多孔質材料を用い，下層１６０ｃの素材に気孔径が０．０５ｍｍ程度で気孔率が１０％程度の多孔質材料を用いるようにしてもよい。かかる場合，現像液吐出ノズル７２の吐出口７３から吐出された現像液の吐出圧が各層１６０ａ，１６０ｂ，１６０ｃを順に通過するにつれて徐々に損失する。したがって，多孔質板１６０の上層１６０ａに対しては，現像液が滑らかに流入し，流入した後の現像液は，多孔質板１６０の中層１６０ｂ，下層１６０ｃにおいて徐々に速度が低下する。この結果，多孔質板１６０の上面において現像液が跳ね返ることがなく，無駄になる現像液の量を低減できる。また，多孔質板１６０の下面からは，速度が十分に低下した現像液がウェハＷ上に供給されるので，ウェハＷ上の現像液の流動が防止される。なお，前記多孔質板１６０の層の数は，三層に限られず，任意に選択できる。また，前記多孔質板１６０のように下面に近づくにつれ気孔率が低下するようにしてもよい。さらに，目の細かい板状の網を穴の位置がずれるように複数重ね合わせて多孔質板を形成するようにしてもよい。また，目の細かい網と多孔質材料とを組み合わせて多孔質板を形成してもよい。   In the above embodiment, the entire porous plate 71 is formed of a porous material having the same characteristics. However, as a plurality of materials are used for the porous plate 71, as the surface approaches the lower surface from the upper surface of the porous plate 71, the air flows. The hole diameter may be reduced. For example, as shown in FIG. 13, the porous plate 160 has a three-layer structure, and a porous material having a pore diameter of about 0.5 mm and a porosity of about 50% is used as the material of the upper layer 160a, and the material of the middle layer 160b. In addition, a porous material having a pore diameter of about 0.2 mm and a porosity of about 20% is used, and a porous material having a pore diameter of about 0.05 mm and a porosity of about 10% is used for the material of the lower layer 160c. Also good. In such a case, the discharge pressure of the developer discharged from the discharge port 73 of the developer discharge nozzle 72 is gradually lost as it sequentially passes through the layers 160a, 160b, and 160c. Therefore, the developer smoothly flows into the upper layer 160a of the porous plate 160, and the speed of the developer after flowing in gradually decreases in the middle layer 160b and the lower layer 160c of the porous plate 160. As a result, the developer does not splash on the upper surface of the porous plate 160, and the amount of developer that is wasted can be reduced. Further, since the developing solution having a sufficiently reduced speed is supplied onto the wafer W from the lower surface of the porous plate 160, the developing solution on the wafer W is prevented from flowing. The number of layers of the porous plate 160 is not limited to three layers, and can be arbitrarily selected. Further, as the porous plate 160 approaches the lower surface, the porosity may decrease. Furthermore, a porous plate may be formed by overlapping a plurality of fine plate-like nets so that the positions of the holes are shifted. Further, a porous plate may be formed by combining a fine mesh and a porous material.

以上，本発明の実施の形態の一例について説明したが，本発明はこの例に限らず種々の態様を採りうるものである。例えば以上の実施の形態では，現像液吐出ノズルの吐出口がスリット状であったが，本発明は，現像液吐出ノズルの吐出口が円形状で，現像液吐出ノズルの下面に複数並列されているものにも適用できる。また，本発明をウェハＷの現像処理装置に適用したものであったが，本発明はウェハ以外の基板例えばＬＣＤ基板などのＦＰＤ基板，フォトマスク用のガラス基板などの現像処理装置にも適用できる。   The example of the embodiment of the present invention has been described above, but the present invention is not limited to this example and can take various forms. For example, in the above embodiment, the discharge port of the developer discharge nozzle has a slit shape. However, in the present invention, the discharge port of the developer discharge nozzle has a circular shape, and a plurality of discharge ports are arranged in parallel on the lower surface of the developer discharge nozzle. It can also be applied to what you have. In addition, the present invention is applied to the development processing apparatus for the wafer W, but the present invention can also be applied to a development processing apparatus such as a substrate other than the wafer, for example, an FPD substrate such as an LCD substrate and a glass substrate for a photomask. .

基板の現像処理を行う現像処理装置において，現像液内への気泡の混入を防止し，基板上での現像液の流動を防止するように基板に現像液を供給する際に有用である。   In a development processing apparatus that performs development processing of a substrate, it is useful when supplying the developer to the substrate so as to prevent bubbles from entering the developer and to prevent the developer from flowing on the substrate.

本実施の形態にかかる現像処理装置を搭載した塗布現像処理システムの構成の概略を示す平面図である。It is a top view which shows the outline of a structure of the coating development processing system carrying the development processing apparatus concerning this Embodiment. 図１の塗布現像処理システムの正面図である。FIG. 2 is a front view of the coating and developing treatment system of FIG. 1. 図１の塗布現像処理システムの背面図である。FIG. 2 is a rear view of the coating and developing treatment system of FIG. 1. 現像処理装置の構成を示す縦断面の説明図である。It is explanatory drawing of the longitudinal cross-section which shows the structure of a developing processing apparatus. 現像処理装置の構成を示す横断面の説明図である。It is explanatory drawing of the cross section which shows the structure of a developing processing apparatus. 現像液吐出ノズルの斜視図である。It is a perspective view of a developing solution discharge nozzle. 受け板の平面図である。It is a top view of a receiving plate. 現像液の吐出開始時の様子を示す筐体の縦断面の説明図である。It is explanatory drawing of the longitudinal cross-section of the housing | casing which shows the mode at the time of the start of discharge of a developing solution. 現像液の吐出時の様子を示す筐体の縦断面の説明図である。It is explanatory drawing of the longitudinal cross-section of the housing | casing which shows a mode at the time of discharge of a developing solution. 現像液の吐出終了時の様子を示す筐体の縦断面の説明図である。It is explanatory drawing of the longitudinal cross-section of the housing | casing which shows the mode at the time of completion | finish of discharge of a developing solution. 下面が平坦な現像液吐出ノズルの構成を示す説明図である。It is explanatory drawing which shows the structure of the developing solution discharge nozzle with a flat lower surface. 二つの現像液吐出ノズルを備えた筐体の構成を示す縦断面の説明図である。It is explanatory drawing of the longitudinal cross-section which shows the structure of the housing | casing provided with two developing solution discharge nozzles. 三層構造を有する多孔質板の構成を示す説明図である。It is explanatory drawing which shows the structure of the porous board which has a three-layer structure.

符号の説明Explanation of symbols

１ 塗布現像処理システム
１８ 現像処理装置
６０ スピンチャック
７０ 筐体
７１ 多孔質板
７２ 現像液吐出ノズル
８０ ノズル移動機構
１１０ 受け板
Ｓ 陰圧室
Ｗ ウェハ DESCRIPTION OF SYMBOLS 1 Coating | development processing system 18 Development processing apparatus 60 Spin chuck 70 Case 71 Porous board 72 Developer discharge nozzle 80 Nozzle moving mechanism 110 Receptacle S Negative pressure chamber W Wafer

Claims (13)

基板を現像処理する現像処理装置であって，
基板を水平に保持する基板保持部材と，
前記基板保持部材に保持された基板の上方に配置され，内部に陰圧室を形成する筐体と，
前記筐体内に設けられ，現像液を吐出する現像液吐出ノズルと，
前記筐体内において前記現像液吐出ノズルを移動させるノズル移動機構と，を備え，
前記現像液吐出ノズルの下面には，基板の一方向の寸法よりも長い距離に渡って吐出口が形成され，
前記ノズル移動機構は，前記現像液吐出ノズルを，前記基板の一方向と直交する方向に向けて少なくとも基板の寸法よりも長い距離を移動させることができ，
前記筐体の下面部は，現像液が通過可能な多孔質板により形成され，
前記現像液吐出ノズルの前記吐出口は，前記多孔質板の上面に近接しており，
前記吐出口から吐出される現像液は，前記多孔質板を通じて基板に供給されることを特徴とする，現像処理装置。 A development processing apparatus for developing a substrate,
A substrate holding member for horizontally holding the substrate;
A housing which is disposed above the substrate held by the substrate holding member and forms a negative pressure chamber therein;
A developer discharge nozzle provided in the housing for discharging the developer;
A nozzle moving mechanism for moving the developer discharge nozzle in the housing,
On the lower surface of the developer discharge nozzle, a discharge port is formed over a distance longer than the dimension in one direction of the substrate,
The nozzle moving mechanism can move the developer discharge nozzle in a direction perpendicular to one direction of the substrate at least a distance longer than the dimension of the substrate,
The lower surface of the housing is formed of a porous plate through which developer can pass,
The discharge port of the developer discharge nozzle is close to the upper surface of the porous plate,
The development processing apparatus, wherein the developer discharged from the discharge port is supplied to the substrate through the porous plate. 前記筐体の多孔質板は，平面から見て少なくとも基板よりも大きい方形に形成されていることを特徴とする，請求項１に記載の現像処理装置。 The development processing apparatus according to claim 1, wherein the porous plate of the housing is formed in a square shape that is at least larger than the substrate when viewed from above. 前記筐体を上下動させる筐体昇降駆動部をさらに備えたことを特徴とする，請求項１又は２のいずれかに記載の現像処理装置。 The development processing apparatus according to claim 1, further comprising a casing elevating drive unit that moves the casing up and down. 前記ノズル移動機構は，前記筐体内に設けられていることを特徴とする，請求項１，２又は３のいずれかに記載の現像処理装置。 The development processing apparatus according to claim 1, wherein the nozzle moving mechanism is provided in the housing. 前記基板保持部材に保持された基板の外側に設けられ，前記基板の外側に落下する現像液を前記基板と同一平面上で受ける受け部材をさらに備えたことを特徴とする，請求項１，２，３又は４のいずれかに記載の現像処理装置。 2. A receiving member which is provided outside the substrate held by the substrate holding member and receives the developing solution falling outside the substrate on the same plane as the substrate. , 3 or 4. 前記受け部材の外形は，平面から見て少なくとも前記多孔質板よりも大きい方形に形成され，
当該受け部材の中央部付近には，平面から見て基板よりも僅かに大きい開口部が形成されていることを特徴とする，請求項５に記載の現像処理装置。 The outer shape of the receiving member is formed in a square shape that is at least larger than the porous plate as viewed from above,
6. The development processing apparatus according to claim 5, wherein an opening that is slightly larger than the substrate when viewed from above is formed near the center of the receiving member. 前記受け部材を昇降する受け部材昇降駆動部をさらに備えたことを特徴とする，請求項５又は６のいずれかに記載の現像処理装置。 The development processing apparatus according to claim 5, further comprising a receiving member raising / lowering drive unit for raising and lowering the receiving member. 前記現像液吐出ノズルの吐出口は，現像液吐出ノズルの下端面に形成され，
当該現像液吐出ノズルの下端面における前記吐出口の周辺部には，前記多孔質板に接する水平部が形成されていることを特徴とする，請求項１，２，３，４，５，６又は７のいずれかに記載の現像処理装置。 The discharge port of the developer discharge nozzle is formed at the lower end surface of the developer discharge nozzle,
The horizontal part which contacts the said porous board is formed in the peripheral part of the said discharge outlet in the lower end surface of the said developing solution discharge nozzle, The 1, 2, 3, 4, 5, 6 characterized by the above-mentioned. Or the development processing apparatus according to any one of 7; 前記筐体内には，複数の現像液吐出ノズルが設けられていることを特徴とする，請求項１，２，３，４，５，６，７又は８のいずれかに記載の現像処理装置。 The development processing apparatus according to claim 1, wherein a plurality of developer discharge nozzles are provided in the housing. 前記多孔質板は，多孔質板の上面から下面に近づくにつれ気孔径が小さくなるように形成されていることを特徴とする，請求項１，２，３，４，５，６，７，８又は９のいずれかに記載の現像処理装置。 The said porous board is formed so that a pore diameter may become small as it approaches the lower surface from the upper surface of a porous board, The 1, 2, 3, 4, 5, 6, 7, 8 characterized by the above-mentioned. Or the development processing apparatus according to any one of 9; 請求項１〜１０のいずれかに記載の現像処理装置を用いた現像処理方法であって，
陰圧室内を筐体の外部よりも陰圧にし，多孔質板内に現像液を含ませる工程と，
その後，前記筐体の多孔質板を基板の表面に近接する工程と，
その後，現像液吐出ノズルの吐出口から前記多孔質板に向けて現像液を吐出し，その現像液を吐出した状態の前記現像液吐出ノズルを前記多孔質板に沿って移動させることによって，前記多孔質板を通じて基板に現像液を供給する工程と，を有することを特徴とする，現像処理方法。 A development processing method using the development processing apparatus according to claim 1,
A process in which the negative pressure chamber is set to a negative pressure from the outside of the housing and the developer is contained in the porous plate;
Thereafter, the step of bringing the porous plate of the housing close to the surface of the substrate;
Thereafter, the developer is discharged from the discharge port of the developer discharge nozzle toward the porous plate, and the developer discharge nozzle in a state of discharging the developer is moved along the porous plate, thereby And a step of supplying a developing solution to the substrate through the porous plate. 前記多孔質板と基板との隙間に現像液を介在した状態で基板を現像することを特徴とする，請求項１１に記載の現像処理方法。 The development processing method according to claim 11, wherein the substrate is developed in a state where a developer is interposed in a gap between the porous plate and the substrate. 基板に供給される現像液の量を，前記現像液の供給時における前記多孔質板と基板との隙間により設定することを特徴とする，請求項１１又は１２のいずれかに記載の現像処理方法。 13. The development processing method according to claim 11, wherein an amount of the developer supplied to the substrate is set by a gap between the porous plate and the substrate when the developer is supplied. .
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