JP2004228400A - Light emitting device and manufacturing method thereof - Google Patents

Light emitting device and manufacturing method thereof Download PDF

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JP2004228400A
JP2004228400A JP2003015881A JP2003015881A JP2004228400A JP 2004228400 A JP2004228400 A JP 2004228400A JP 2003015881 A JP2003015881 A JP 2003015881A JP 2003015881 A JP2003015881 A JP 2003015881A JP 2004228400 A JP2004228400 A JP 2004228400A
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light emitting
light
emitting device
resin
package
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JP4265225B2 (en
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Michihide Miki
倫英 三木
Masafumi Kuramoto
雅史 蔵本
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Nichia Chemical Industries Ltd
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Nichia Chemical Industries Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device with high emission intensity (efficiency of light extracted to outside) and less color slippage. <P>SOLUTION: The light emitting device is provided with: a package having a recessed part, and including lead electrodes and a resin supporting the lead electrodes; and a light emitting element subjected to die bonding at the recessed part. The resin configuring the package includes particles which receives the light generated from the light emitting element to recover deterioration in the resin due to heat, and the wavelength of the light emitted by the light emitting element is selected within a wavelength range of 365 nm to 550 nm. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

【０００１】
【発明の属する技術分野】
本発明は、発光装置、特に樹脂によりリード電極が保持されたパッケージに発光素子が収納されてなる発光装置に関する。
【０００２】
【従来の技術】
近年、小型・薄型化を目的として、表面実装タイプの発光装置がリードタイプの発光装置に代えて多く使用されるようになって来ている。
この面実装タイプの発光装置は、パッケージの内部に発光素子チップがダイボンディングされた後、封止されることにより構成されている。
【０００３】
【特許文献１】
特開２００２−２２３００２号公報
【０００４】
【発明が解決しようとする課題】
しかしながら、パッケージに樹脂を用いた従来の発光装置は、発光装置を製造する過程において、パッケージに加えられる熱によって変色したり、反射率が減少したりするなど、樹脂が劣化して、発光強度（光の外部への取り出し効率）が低下したり発光色が所望の色からずれるという問題があった。
【０００５】
そこで、本発明は発光強度（光の外部への取り出し効率）が高く、色ずれの少ない発光装置を提供することを目的とする。
【０００６】
【課題を解決するための手段】
以上の目的を達成するために、本発明に係る発光装置は、凹部を有しリード電極とそのリード電極を保持する樹脂とを含んでなるパッケージと、前記凹部においてダイボンディングされた発光素子とを備えた発光装置であって、
前記パッケージを構成する樹脂には、前記発光素子が発生する光によって熱による樹脂の劣化を回復させることが可能な粒子が含まれており、
前記発光素子が発光する光の波長が、３６５ｎｍ〜５５０ｎｍの波長域にあることを特徴とする。
【０００７】
以上のように構成された本発明に係る発光装置は、一定期間前記発光素子を発光させた後において、前記凹部の側面の反射率を回復させ、かつ熱による樹脂の変色を回復させることができるので、発光強度（光の外部への取り出し効率）が高く、色ずれの少ない発光装置を提供することができる。
【０００８】
また、本発明に係る発光装置では、前記発光素子が発光する光の波長は、紫外領域、青色領域又は緑色領域のいずれかの波長領域に属していてもよい。
ここで、本明細書において、発光素子の発光波長に関していう場合には、紫外領域とは、波長が３６５ｎｍ〜４００の範囲をいい、青色領域とは、ピーク波長が４６０ｎｍ〜４８０ｎｍの範囲をいい、緑色領域とは、ピーク波長が５２０ｎｍ〜５５０の範囲をいう。
尚、上記以外の波長が４００ｎｍ〜４６０ｎｍの波長域、４８０ｎｍ〜５２０の波長域はそれぞれ、近紫外領域、青緑領域という。
【０００９】
また、本発明に係る発光装置において、前記粒子は、酸化チタン、チタン酸ストロンチウム、ニオブ酸カリウムからなる群から選択される少なくとも一種であることが好ましく、これにより効果的に劣化した樹脂を回復させることができる。
【００１０】
さらに、本発明に係る発光装置において、前記粒子は分光増感色素が担持されていることが好ましい。
【００１１】
またさらに、本発明に係る発光装置において、前記粒子は、ルテニウム、クロムからなる群から選択される少なくとも一種であってもよい。
【００１２】
また、本発明に係る発光装置においては、前記発光装置は前記発光素子がダイボンディングされた後に、前記発光素子を一定期間継続して発光させるエージング処理されていることが好ましく、これにより、使用状態において発光強度が変化するのが防止できる。
【００１３】
また、本発明に係る発光装置の第１の製造方法は、凹部を有しリード電極とそのリード電極を保持する樹脂とを含んでなるパッケージと、紫外領域、青色領域又は緑色領域のいずれかの波長領域に属する光を発生し前記凹部にダイボンディングされた発光素子とを備えた発光装置の製造方法であって、
上記パッケージを構成する樹脂が、前記発光素子が発生する光によって熱による樹脂の劣化を回復させることが可能な粒子を含むように前記パッケージを作製することと、
ダイボンディングされた後の前記発光素子を一定期間継続して発光させることとを含むことを特徴とする。
【００１４】
また、本発明に係る発光装置の第２の製造方法は、凹部を有しリード電極とそのリード電極を保持する樹脂とを含んでなるパッケージと、前記凹部にダイボンディングされた発光素子とを備えた発光装置の製造方法であって、
上記パッケージを構成する樹脂が、前記発光素子が発生する光によって熱による樹脂の劣化を回復させることが可能な粒子を含むように前記パッケージを作製することと、
前記発光素子がダイボンディングされた後に、少なくとも前記パッケージの凹部の側面に一定期間継続して、紫外光又は青色光を照射することを含むことを特徴とする。
【００１５】
【発明の実施の形態】
以下、本発明に係る実施の形態の発光装置について説明する。
本実施の形態の発光装置において、パッケージ１は、例えば図１（ａ）に示すように、正のリード電極２１と負のリード電極２２とが成形樹脂１０によって一体成形されて作製される。詳細に説明すると、パッケージ１の上面には、発光素子チップ３０を収納する凹部１４が形成され、その凹部１４の底面には、正のリード電極２１と負のリード電極２２とが互いに分離されてそれぞれの一方の主面が露出するように設けられる。
【００１６】
また、パッケージ１において、正のリード電極２１の他端と負のリード電極２２の他端とは、パッケージ１の端面から突き出すように設けられ、その突き出した部分が図１（ｂ）に示すようにパッケージ１の下面である接合面の内側に折り曲げられて正負の接続端子部が構成される。
【００１７】
以上のように構成されたパッケージ１の凹部１４に、発光素子チップ３０が設けられ、凹部１４内に発光素子チップ３０を覆うように透光性樹脂が充填されて実施の形態の発光装置は構成される。
【００１８】
ここで、特に本実施の形態の発光装置は、パッケージ１を構成する成形樹脂１０が、青色光の照射を受けることによって樹脂の劣化を回復させることが可能な粒子を含んでおり、製造過程の最終段階において発光素子チップ３０の発光を一定時間継続させるエージング処理されていることを特徴とする。
これによって、本実施の形態の発光装置では、製造工程中においてパッケージ１にかかる熱やプラズマ処理等によって劣化した（例えば、熱によって黄変した）成形樹脂１０の表面（特に、凹部１４の傾斜した側面の反射率）を回復させることができ、従来の発光装置に比較して発光出力の高くできる。
【００１９】
ここで、本発明において、青色光の照射を受けることによって樹脂の劣化を回復させることが可能な粒子（劣化樹脂回復粒子）の具体例としては、酸化チタン、チタン酸ストロンチウム、ニオブ酸カリウム等が挙げられ、その中で特に好ましいものは、酸化チタンである。
また、本発明において、劣化樹脂回復粒子には、分光増感色素が担持されていることが好ましい。本発明に使用可能な分光増感色素としては、４００ｎｍ以上の可視光領域に吸収を有する金属錯体や有機色素を用いることができる。金属錯体としては、銅フタロシアニン等の金属フタロシアニンや特表平５−５０４０２３号に記載のルテニウム、オスミウム及び鉄の錯体が挙げられる。有機色素としては、シアニン系色素、メロシアニン系色素、アントラキノン系色素、アゾ系色素、キナクドリン系色素、メタルフリーフタロシアニン系色素等が挙げられる。
上記の分光増感色素の中で、具体的には、赤色を吸収する色素としてジアミノアントラキノニル＆ジバビルツルイソインドリン、緑色を吸収する色素としてナノブロム−トリクロロ銅フタロシアニン＆ジバビルツルイソインドリン、青色を吸収する色素として銅フタロシアニン、そしてルテニウム錯体を好適に使用できる。
ここで、ルテニウム錯体は、可視光全域に亘り吸収を有しているので、白色発光の可能な、ＲＧＢ（赤色、緑色、青色）を発光する各発光チップを近接して配置した発光装置あるいは青色発光チップと蛍光体とを組合せた発光装置に好適に使用できる。ルテニウム錯体の具体例としては、Ｒｕ（２，２′−ｂｉｐｙｒｉｄｉｎｅ−４，４′−ｄｉｃａｒｂｏｘｙｌ）２（ＳＣＮ）２を挙げることができる。
分光増感色素を劣化樹脂回復粒子に担持させるには、分光増感色素を溶解した溶液に劣化樹脂回復粒子を浸漬し、好ましくは加温して、劣化樹脂回復粒子に分光増感色素を吸着させることにより行うことができる。分光増感色素を吸着させた劣化樹脂回復粒子は、溶液から分離後、洗浄し、乾燥して用いることができる。
また、分光増感色素とは、光を吸収することにより励起電子を隣接する粒子へ放出する機能を有する色素であって、劣化樹脂回復粒子に分光増感色素が担持されることによってより効果的に劣化した樹脂を回復させることができる。
【００２０】
また、劣化樹脂回復粒子としては、ルテニウム、クロムからなる群から選択される一種又はその両方を用いることができる。
【００２１】
本発明において、劣化樹脂回復粒子として最も好ましいものは、酸化チタンであることを説明したが、酸化チタンの結晶構造には、低温型のアナターゼ型、正方晶系に属する高温型のルチル型、および斜方晶系のブルッカイト型の３種類ある。本発明においては、いずれの結晶構造のものを用いてもよく、本発明に関して言えばそれぞれ以下のような特徴がある。
【００２２】
ａ）アナターゼ型酸化チタン（結晶系：低温安定型正方晶系）
酸化チタンの吸収光は紫外領域であり、酸化チタンの吸収光スペクトルと、青色窒化物半導体発光素子が発光する光のスペクトルの重なりは非常に少ない。しかしながら、アナターゼ型酸化チタンは光活性が高いため、スペクトルの重なりが少ないために吸収される光が微量であっても、その微量の光量を効率良く利用し表面に存在する樹脂の劣化黄色変化部を回復させることができる。
【００２３】
ｂ）ルチル（金紅石）型酸化チタン（結晶系：高温安定型正方晶系）
ルチル型酸化チタンは、高温下において非常に安定であるため、デバイス作製工程等にて高温環境にさらされていても性能を維持することができる。また、ルチル型酸化チタンは、比較的近紫外領域の光を効率良く吸収することができることから、窒化物半導体発光素子の青色光をアナターゼ型酸化チタンより多く吸収できる。
【００２４】
ｃ）ブルッカイト（板チタン石）型酸化チタン（結晶系：中温度安定型斜方晶系）
結晶系が斜方晶系であるために、パッケージ内部下方に配置した発光素子からの光を効率良く吸収することができる。
【００２５】
また、本発明において、成形樹脂としては、熱や製造工程中のプラズマ処理などによって、表面の反射率の低下及び／又は変色などが発生する種々の樹脂を用いることができるが、特にナイロン系の樹脂、液晶ポリマー、ＰＢＴ、ＰＰＳなどを用いた場合に顕著な効果が得られる。
【００２６】
成形樹脂における劣化樹脂回復粒子の好ましい含有量は、５ｗｔ％〜５０ｗｔ％、好ましくは１０ｗｔ％〜３０ｗｔ％、さらに好ましくは、１０ｗｔ％〜２０ｗｔ％の範囲である。含有量が５０ｗｔ％を超えると、液体状態での樹脂の流動性が著しく低下するため成形が難しくなり、パッケージ構造が複雑となった場合の成形、小型化への対応が困難となる。
【００２７】
次に、本実施の形態の発光装置の製造方法について説明する。
本製造方法では、まず、例えば、０．１５ｍｍ厚の鉄入り銅からなる長尺金属板をプレスによる打ち抜き加工により各パッケージの正負のリード電極となる複数の部分を形成し、Ａｇメッキ加工を施した後、成形金型内にセットして、射出成形により各パッケージに対応する部分にそれぞれ成形樹脂部１０を形成する。
ここで、成形樹脂には、劣化樹脂回復粒子を所定の量だけ含有させて成形する。
【００２８】
次に、図２（ａ）（ｂ）に示すように、凹部１４の底面に露出した負のリード電極２２上に、発光素子チップ３０をダイボンディング樹脂を介して設け、そのダイボンディング樹脂を１７０℃で１．５時間、１５０℃で１．５時間の二段階で硬化させる。
ダイボンディング樹脂を硬化させた後、発光素子チップのｎ電極３３と負のリード電極２２とをワイヤボンディングにより接続し、ｐ電極３４と正のリード電極２１とをワイヤボンディングにより接続する。
そして、凹部１４に、発光素子チップ３０を覆うように透光性樹脂４１を充填して硬化させた後、個々の素子に分離する。
尚、分離後、パッケージ１の端面から突き出した正のリード電極２１と負のリード電極２２とは、図１（ｂ）に示すようにパッケージ１の接合面の内側に折り曲げられ、Ｊ−ベンド（Ｂｅｎｄ）型の正負の接続端子部が構成される。
【００２９】
ここで、発光素子チップ３０は、青色の発光が可能な窒化ガリウム系化合物半導体発光素子であり、該発光素子は、例えばサファイア基板３１上にｎ型層、活性層及びｐ型層を含む窒化物半導体層３２が形成され、活性層及びｐ型層の一部を除去して露出させたｎ型層の上にｎ電極３３が形成され、ｐ型層の上にｐ電極３４が形成されてなる。
【００３０】
以上のようにして作製された発光装置を、２０ｍＡの電流が流れるようにして常温で継続して３０００分間通電する（エージング工程）。このエージングによって、劣化樹脂回復粒子が含有されたパッケージ（特に、凹部１４の内周側面）に連続して青色光が照射されて劣化した樹脂の表面が回復される。
【００３１】
図３は、本実施の形態のエージング工程におけるエージング時間に対する発光出力Ｐｏｗの向上を示すグラフである。
図３に示すグラフから明らかなように、エージング時間の経過とともに発光出力が増加し、３０００分経過した時点では約１５％以上発光出力が向上して発光出力はほぼ飽和している。
尚、図３に示すデータを得るための発光装置において、発光素子チップ（窒化ガリウム系化合物半導体発光素子）の発光ピーク波長は、２６５ｎｍである。
【００３２】
また、パッケージの黄色変色からの回復を確認するために、以下の検討を行った。
具体的には、成形樹脂と同じ材質で同じ量の劣化樹脂回復粒子（酸化チタン粒子）を含む樹脂片を、１７０℃で２時間、１８０℃で２時間、１９０℃で２時間、２００℃で２時間、２３０℃で２時間で変色させた樹脂サンプルをそれぞれ準備し、ピーク波長４６０ｎｍの青色光を、１７時間、７２時間連続して照射した後の色度と反射率をそれぞれ測定した。
その結果、いずれのサンプルも変色は回復され（図４〜図８）、反射率も黄色変色した状態から比較して、約１０％回復した。
本検討において、ピーク波長４６０ｎｍの青色光は、窒化物半導体発光素子（発光ダイオード）を６０ｍＡ通電することにより発光させた光を用いた。
【００３３】
図４は、１７０℃で２時間で変色させたサンプルに対して、ピーク波長４６０ｎｍの青色光を、１７時間および７２時間連続して照射した後の色度をそれぞれ示している。
図４から明らかなように、青色光を１７時間照射した後、黄色変色した色度は、初期の色度に近づくように回復され、７２時間照射後では、さらに回復している。
尚、図４において、７２時間照射後の色度を示す黒丸は、初期の色度を示す印と重なっている。
すなわち、本検討において、変色した色度は、青色光の７２時間照射により完全に初期の色度まで回復された。
【００３４】
図５は、１８０℃で２時間で変色させたサンプルに対して、ピーク波長４６０ｎｍの青色光を、１７時間および７２時間連続して照射した後の色度をそれぞれ示している。
この場合でも、図５に示すように、青色光を１７時間照射した後、黄色変色した色度は、初期の色度に近づくように回復され、７２時間照射後では、さらに回復している。
また、本検討において、変色した色度は、青色光の７２時間照射によりほぼ初期の色度まで回復された。
【００３５】
図６〜図８はそれぞれ、１９０℃で２時間で変色させたサンプル、２００℃で２時間、２３０℃で２時間で変色させたサンプルをそれぞれ、ピーク波長４６０ｎｍの青色光を、１７時間および７２時間連続して照射した後の色度をそれぞれ示している。
これらの場合でも、青色光を１７時間照射した後、黄色変色した色度は、初期の色度に近づくように回復され、７２時間照射後では、さらに回復している。
【００３６】
また、以上の検討結果から、製造工程において、パッケージが受ける熱を１８０℃以下に設定することが好ましいことがわかる。
【００３７】
変形例．
以上の実施の形態では、青色の発光が可能な発光素子チップ（窒化物半導体発光素子）を用いた発光装置について説明したが、本発明は青色に限られるものではなく、緑色の発光が可能な発光素子チップ（窒化物半導体発光素子）を用いて構成してもよい。
本発明者らの検討によれば、緑色の窒化物半導体発光素子を用いて発光装置を構成した場合でも、実施の形態と同様の効果が確認されている。
【００３８】
また、以上の実施の形態では、発光素子チップを封止した後にエージング工程を設けたが、本発明はこれに限られるものではなく、封止前にエージング工程を設けてもよく、このようにしても実施の形態と同様の作用効果が得られる。
【００３９】
また、以上の実施の形態では、発光装置に組み込んだ発光素子チップを所定時間継続して発光させるエージング工程によりパッケージの成形樹脂の劣化を回復させたが、エージング工程に代えて青色又は紫外（ＵＶ）光を用いた光照射による樹脂劣化回復工程を別に用いてもよい。この場合、紫外光を用いた光照射による樹脂劣化回復工程は発光装置の製造工程において、パッケージに熱がかかるダイボンディング工程を経た後であれば、いずれの時点で行っても良い。
【００４０】
本発明者らは、紫外線照射によるパッケージの黄色変色からの回復を確認するために、以下の検討を行った。
成形樹脂と同じ材質で同じ量の劣化樹脂回復粒子（酸化チタン粒子）を含む樹脂片を用い、ダイボンディング樹脂の硬化を想定して１７０℃で２時間熱処理することにより、黄色変色させて、１０時間紫外線（波長ピーク波長３７０ｎｍ）を照射して、紫外線照射前後の色度と反射率を測定した。
【００４１】
その結果、図９に示すように、熱処理後の黄色変色が紫外線照射後において大幅に回復された。
また、熱処理後の反射率劣化が紫外線照射後において回復された。
尚、反射率の回復は、４００ｎｍ〜５００ｎｍの間の光に対する反射率の回復が顕著であった。
【００４２】
以上説明したことから明らかなように、本発明では、エージング工程に代えて所定波長の光を用いた光照射による樹脂劣化回復工程を別に用いてもよく、その際、紫外線を用いることができる。
また、本発明では、紫外領域の波長の光を発光する発光素子チップ（窒化物半導体発光素子）を用いて構成された発光装置において、エージング工程を適用してもよいことは明らかであり、そのようにしても実施の形態と同様の作用効果が得られる。
【００４３】
【発明の効果】
以上説明したことから明らかなように、本発明によれば、発光強度（光の外部への取り出し効率）が高く、色ずれの少ない発光装置を提供することができる。
【図面の簡単な説明】
【図１】本発明に係る実施の形態の発光装置の斜視図である。
【図２】（ａ）は、パッケージの凹部１４に発光素子チップを設け、その凹部１４に透光性樹脂を充填した後の実施の形態の発光装置の平面図であり、（ｂ）は（ａ）のＢ−Ｂ’線についての断面図である。
【図３】実施の形態の発光装置におけるエージング時間に対する発光出力を示すグラフである。
【図４】１７０℃、２時間熱処理したパッケージの樹脂の熱による色度の変化と、変化した色度の青色光による回復を示すグラフである。
【図５】１８０℃、２時間熱処理したパッケージの樹脂の熱による色度の変化と、変化した色度の青色光による回復を示すグラフである。
【図６】１９０℃、２時間熱処理したパッケージの樹脂の熱による色度の変化と、変化した色度の青色光による回復を示すグラフである。
【図７】２００℃、２時間熱処理したパッケージの樹脂の熱による色度の変化と、変化した色度の青色光による回復を示すグラフである。
【図８】２３０℃、２時間熱処理したパッケージの樹脂の熱による色度の変化と、変化した色度の青色光による回復を示すグラフである。
【図９】本発明に係る変形例における、パッケージ樹脂の熱処理後の色度変化と、変化した色度の紫外光による回復を示すグラフである。
【図１０】本発明に係る変形例における、パッケージ樹脂の熱処理後の反射率と、変化した反射率の紫外光による回復を示すグラフである。
【符号の説明】
１…パッケージ、
１０…成形樹脂、
１４…凹部、
２１…正のリード電極、
２２…負のリード電極、
３０…発光素子チップ。[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a light emitting device, and more particularly to a light emitting device in which a light emitting element is housed in a package in which a lead electrode is held by a resin.
[0002]
[Prior art]
In recent years, surface mount type light emitting devices have been increasingly used in place of lead type light emitting devices for the purpose of miniaturization and thinning.
The light emitting device of the surface mount type is configured such that a light emitting element chip is die-bonded inside a package and then sealed.
[0003]
[Patent Document 1]
JP 2002-223002 A
[Problems to be solved by the invention]
However, in a conventional light emitting device using a resin for a package, in the process of manufacturing the light emitting device, the resin is deteriorated such as discoloration or a decrease in reflectance due to heat applied to the package, and the light emission intensity ( However, there has been a problem that the efficiency of extracting light to the outside decreases, and the emission color deviates from a desired color.
[0005]
Therefore, an object of the present invention is to provide a light emitting device having high light emission intensity (light extraction efficiency) and little color shift.
[0006]
[Means for Solving the Problems]
In order to achieve the above object, a light emitting device according to the present invention includes a package including a lead electrode having a concave portion and a resin holding the lead electrode, and a light emitting element die-bonded in the concave portion. A light emitting device comprising:
The resin constituting the package contains particles capable of recovering the resin from being deteriorated due to heat by light generated by the light emitting element,
The wavelength of light emitted by the light emitting element is in a wavelength range of 365 nm to 550 nm.
[0007]
The light emitting device according to the present invention configured as described above can recover the reflectance of the side surface of the concave portion and recover the discoloration of the resin due to heat after the light emitting element emits light for a certain period. Therefore, it is possible to provide a light emitting device with high light emission intensity (light extraction efficiency) and little color shift.
[0008]
Further, in the light emitting device according to the present invention, the wavelength of the light emitted by the light emitting element may belong to any one of an ultraviolet region, a blue region, and a green region.
Here, in this specification, when referring to the emission wavelength of the light-emitting element, the ultraviolet region refers to a wavelength range from 365 nm to 400, and the blue region refers to a peak wavelength range from 460 nm to 480 nm. The green region refers to a range of a peak wavelength of 520 nm to 550.
Note that wavelengths other than those described above in the wavelength range of 400 nm to 460 nm are referred to as a near ultraviolet region and a blue-green region, respectively.
[0009]
Further, in the light emitting device according to the present invention, the particles are preferably at least one selected from the group consisting of titanium oxide, strontium titanate, and potassium niobate, thereby recovering the deteriorated resin effectively. be able to.
[0010]
Further, in the light emitting device according to the present invention, it is preferable that the particles carry a spectral sensitizing dye.
[0011]
Still further, in the light emitting device according to the present invention, the particles may be at least one selected from the group consisting of ruthenium and chromium.
[0012]
Further, in the light emitting device according to the present invention, it is preferable that the light emitting device is subjected to an aging process for causing the light emitting element to emit light continuously for a certain period of time after the light emitting element is die-bonded. In this case, it is possible to prevent the emission intensity from changing.
[0013]
Further, a first manufacturing method of a light emitting device according to the present invention includes a package including a lead electrode having a concave portion and a resin holding the lead electrode, and a package including any one of an ultraviolet region, a blue region, and a green region. A light emitting device that emits light belonging to a wavelength region and has a light emitting element die-bonded to the recess,
Producing the package so that the resin constituting the package contains particles capable of recovering the resin from being thermally degraded by light generated by the light emitting element;
Continuously emitting light from the light emitting element after the die bonding for a certain period of time.
[0014]
Further, a second method of manufacturing a light emitting device according to the present invention includes a package having a concave portion and including a lead electrode and a resin holding the lead electrode, and a light emitting element die-bonded to the concave portion. A method of manufacturing a light emitting device,
Producing the package so that the resin constituting the package contains particles capable of recovering the resin from being thermally degraded by light generated by the light emitting element;
The method may further include irradiating at least a side surface of the concave portion of the package with ultraviolet light or blue light after the light emitting element is die-bonded.
[0015]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, a light emitting device according to an embodiment of the present invention will be described.
In the light emitting device of the present embodiment, the package 1 is manufactured by integrally molding a positive lead electrode 21 and a negative lead electrode 22 with a molding resin 10 as shown in FIG. More specifically, a concave portion 14 for accommodating the light emitting element chip 30 is formed on the upper surface of the package 1, and a positive lead electrode 21 and a negative lead electrode 22 are separated from each other on the bottom surface of the concave portion 14. Each one main surface is provided so as to be exposed.
[0016]
In the package 1, the other end of the positive lead electrode 21 and the other end of the negative lead electrode 22 are provided so as to protrude from the end face of the package 1, and the protruding portion is as shown in FIG. Are bent inside the bonding surface, which is the lower surface of the package 1, to form positive and negative connection terminals.
[0017]
The light emitting element chip 30 is provided in the concave portion 14 of the package 1 configured as described above, and the concave portion 14 is filled with a translucent resin so as to cover the light emitting element chip 30. Is done.
[0018]
Here, in particular, in the light emitting device of the present embodiment, the molding resin 10 forming the package 1 includes particles capable of recovering the deterioration of the resin by receiving the irradiation of the blue light. In the final stage, an aging process for keeping the light-emitting element chip 30 emitting light for a certain time is performed.
As a result, in the light emitting device of the present embodiment, the surface of molding resin 10 that has deteriorated (for example, yellowed due to heat) due to heat applied to package 1 or plasma processing during the manufacturing process (particularly, concave portion 14 has an inclined surface). The reflectance of the side surface can be recovered, and the light emission output can be increased as compared with the conventional light emitting device.
[0019]
Here, in the present invention, specific examples of particles (degraded resin recovery particles) capable of recovering the deterioration of the resin by irradiation with blue light include titanium oxide, strontium titanate, potassium niobate and the like. Among them, titanium oxide is particularly preferable.
In the present invention, it is preferable that the degraded resin recovery particles carry a spectral sensitizing dye. As the spectral sensitizing dye usable in the present invention, a metal complex or an organic dye having absorption in a visible light region of 400 nm or more can be used. Examples of the metal complex include metal phthalocyanines such as copper phthalocyanine, and complexes of ruthenium, osmium and iron described in JP-T-5-504033. Examples of the organic dye include a cyanine dye, a merocyanine dye, an anthraquinone dye, an azo dye, a quinacdrine dye, and a metal-free phthalocyanine dye.
Among the above-mentioned spectral sensitizing dyes, specifically, diaminoanthraquinonyl & dibavirtolisoindoline as a dye that absorbs red, nanobromo-trichlorocopper phthalocyanine & divavirtulisoindoline as a dye that absorbs green, Copper phthalocyanine and a ruthenium complex can be suitably used as a dye absorbing blue.
Here, since the ruthenium complex has absorption over the entire visible light range, a light emitting device in which each light emitting chip which emits RGB (red, green, blue) capable of emitting white light is arranged in close proximity or a blue light emitting device. It can be suitably used for a light emitting device in which a light emitting chip and a phosphor are combined. As a specific example of the ruthenium complex, Ru (2,2′-bipyridine-4,4′-dicarboxyl) 2 (SCN) 2 can be given.
To support the spectral sensitizing dye on the deteriorated resin recovery particles, the deteriorated resin recovery particles are immersed in a solution in which the spectral sensitizing dye is dissolved, and preferably heated to adsorb the spectral sensitizing dye to the deteriorated resin recovered particles. Can be performed. The degraded resin recovered particles having the spectral sensitizing dye adsorbed thereon can be used after being separated from the solution, washed and dried.
Further, the spectral sensitizing dye is a dye having a function of emitting excited electrons to adjacent particles by absorbing light, and is more effective when the spectral sensitizing dye is carried on the deteriorated resin recovery particles. It is possible to recover the deteriorated resin.
[0020]
In addition, as the deteriorated resin recovery particles, one or both selected from the group consisting of ruthenium and chromium can be used.
[0021]
In the present invention, it has been described that the most preferable as the deteriorated resin recovery particles is titanium oxide, but the crystal structure of titanium oxide has a low-temperature anatase type, a high-temperature rutile type belonging to a tetragonal system, and There are three types of orthorhombic brookite type. In the present invention, any crystal structure may be used. The present invention has the following features, respectively.
[0022]
a) Anatase type titanium oxide (crystal system: low-temperature stable tetragonal system)
The absorption light of titanium oxide is in the ultraviolet region, and the overlap of the absorption light spectrum of titanium oxide with the spectrum of light emitted by the blue nitride semiconductor light-emitting element is very small. However, since anatase-type titanium oxide has high photoactivity, even if a small amount of light is absorbed due to the small overlap of spectra, the degraded yellow color of the resin existing on the surface is efficiently utilized by using the small amount of light. Can be recovered.
[0023]
b) Rutile (golden red) titanium oxide (crystal system: high-temperature stable tetragonal system)
Since rutile-type titanium oxide is extremely stable at high temperatures, its performance can be maintained even when exposed to a high-temperature environment in a device manufacturing process or the like. Further, since rutile-type titanium oxide can efficiently absorb light in a relatively near-ultraviolet region, it can absorb more blue light of a nitride semiconductor light-emitting element than anatase-type titanium oxide.
[0024]
c) Brookite (brookite) type titanium oxide (crystal system: medium temperature stable orthorhombic system)
Since the crystal system is an orthorhombic system, it is possible to efficiently absorb light from a light emitting element disposed below the inside of the package.
[0025]
Further, in the present invention, as the molding resin, various resins that cause a decrease in surface reflectance and / or discoloration due to heat or plasma treatment during the manufacturing process can be used. A remarkable effect is obtained when a resin, a liquid crystal polymer, PBT, PPS, or the like is used.
[0026]
The preferred content of the deteriorated resin recovery particles in the molding resin is in the range of 5 wt% to 50 wt%, preferably 10 wt% to 30 wt%, and more preferably 10 wt% to 20 wt%. If the content exceeds 50 wt%, the fluidity of the resin in the liquid state is significantly reduced, so that molding becomes difficult, and it becomes difficult to cope with molding and downsizing when the package structure becomes complicated.
[0027]
Next, a method for manufacturing the light emitting device of the present embodiment will be described.
In this manufacturing method, first, for example, a long metal plate made of copper containing iron having a thickness of 0.15 mm is punched by a press to form a plurality of portions serving as positive and negative lead electrodes of each package, and subjected to Ag plating. After that, it is set in a molding die, and a molding resin portion 10 is formed in a portion corresponding to each package by injection molding.
Here, the molding resin is molded by containing a predetermined amount of the deteriorated resin recovery particles.
[0028]
Next, as shown in FIGS. 2A and 2B, the light emitting element chip 30 is provided on the negative lead electrode 22 exposed on the bottom surface of the concave portion 14 via a die bonding resin. Cure in two stages: 1.5 hours at 150 ° C and 1.5 hours at 150 ° C.
After the die bonding resin is cured, the n-electrode 33 of the light emitting element chip and the negative lead electrode 22 are connected by wire bonding, and the p-electrode 34 and the positive lead electrode 21 are connected by wire bonding.
Then, the concave portion 14 is filled with a translucent resin 41 so as to cover the light emitting element chip 30 and is cured, and then is separated into individual elements.
After the separation, the positive lead electrode 21 and the negative lead electrode 22 protruding from the end face of the package 1 are bent inside the bonding surface of the package 1 as shown in FIG. A Bend type positive / negative connection terminal is formed.
[0029]
Here, the light emitting element chip 30 is a gallium nitride-based compound semiconductor light emitting element capable of emitting blue light. The light emitting element is, for example, a nitride including an n-type layer, an active layer, and a p-type layer on a sapphire substrate 31. A semiconductor layer 32 is formed, an n-electrode 33 is formed on an n-type layer which is exposed by removing a part of the active layer and the p-type layer, and a p-electrode 34 is formed on the p-type layer. .
[0030]
The light emitting device manufactured as described above is continuously energized at room temperature for 3000 minutes so that a current of 20 mA flows (aging process). Due to this aging, the package containing the deteriorated resin recovery particles (particularly, the inner peripheral side surface of the concave portion 14) is continuously irradiated with blue light to recover the surface of the deteriorated resin.
[0031]
FIG. 3 is a graph showing the improvement of the light emission output Pow with respect to the aging time in the aging step of the present embodiment.
As is clear from the graph shown in FIG. 3, the light emission output increases as the aging time elapses, and after 3000 minutes, the light emission output is improved by about 15% or more and the light emission output is almost saturated.
In the light emitting device for obtaining data shown in FIG. 3, the light emitting element chip (gallium nitride based compound semiconductor light emitting element) has an emission peak wavelength of 265 nm.
[0032]
Further, the following examination was conducted to confirm the recovery from the yellow discoloration of the package.
Specifically, a resin piece containing the same material as the molding resin and containing the same amount of degraded resin recovery particles (titanium oxide particles) was placed at 170 ° C. for 2 hours, 180 ° C. for 2 hours, 190 ° C. for 2 hours, and 200 ° C. Resin samples that had been discolored for 2 hours at 230 ° C. for 2 hours were prepared, and chromaticity and reflectance were measured after continuously irradiating blue light having a peak wavelength of 460 nm for 17 hours and 72 hours.
As a result, the discoloration of each sample was recovered (FIGS. 4 to 8), and the reflectance was recovered by about 10% as compared with the state where the color changed from yellow.
In the present study, blue light having a peak wavelength of 460 nm was light that was emitted when a nitride semiconductor light emitting device (light emitting diode) was energized at 60 mA.
[0033]
FIG. 4 shows the chromaticity of a sample that has been discolored at 170 ° C. for 2 hours, after continuously irradiating blue light having a peak wavelength of 460 nm for 17 hours and 72 hours, respectively.
As is clear from FIG. 4, after irradiating with blue light for 17 hours, the chromaticity of yellow discoloration is recovered so as to approach the initial chromaticity, and is further recovered after irradiation for 72 hours.
In FIG. 4, a black circle indicating chromaticity after irradiation for 72 hours overlaps a mark indicating initial chromaticity.
That is, in this study, the discolored chromaticity was completely restored to the initial chromaticity by irradiation with blue light for 72 hours.
[0034]
FIG. 5 shows the chromaticity of the sample that has been discolored at 180 ° C. for 2 hours after being continuously irradiated with blue light having a peak wavelength of 460 nm for 17 hours and 72 hours, respectively.
Even in this case, as shown in FIG. 5, after irradiating with blue light for 17 hours, the chromaticity that changed to yellow is restored so as to approach the initial chromaticity, and is further restored after irradiation for 72 hours.
In this study, the discolored chromaticity was recovered to almost the initial chromaticity by irradiating blue light for 72 hours.
[0035]
FIGS. 6 to 8 show samples obtained by changing the color at 190 ° C. for 2 hours, samples obtained by changing the color at 200 ° C. for 2 hours, and samples obtained by changing the color at 230 ° C. for 2 hours. The chromaticity after continuous time irradiation is shown.
Even in these cases, the chromaticity that changed to yellow after irradiation with blue light for 17 hours is restored so as to approach the initial chromaticity, and is further recovered after irradiation for 72 hours.
[0036]
Further, from the above examination results, it is understood that it is preferable to set the heat received by the package to 180 ° C. or less in the manufacturing process.
[0037]
Modified example.
In the above embodiments, the light-emitting device using the light-emitting element chip (nitride semiconductor light-emitting element) capable of emitting blue light has been described. However, the present invention is not limited to blue light and can emit green light. The light emitting element chip (nitride semiconductor light emitting element) may be used.
According to the study of the present inventors, the same effect as that of the embodiment is confirmed even when a light emitting device is configured using a green nitride semiconductor light emitting element.
[0038]
Further, in the above embodiment, the aging step is provided after the light emitting element chip is sealed, but the present invention is not limited to this, and the aging step may be provided before the sealing. The same operation and effect as in the embodiment can be obtained.
[0039]
In the above-described embodiment, the deterioration of the molding resin of the package is recovered by the aging step of continuously emitting light from the light-emitting element chip incorporated in the light-emitting device for a predetermined time. ) A resin deterioration recovery step by light irradiation using light may be used separately. In this case, the resin deterioration recovery step by irradiation with light using ultraviolet light may be performed at any point after the die bonding step in which the package is heated in the manufacturing process of the light emitting device.
[0040]
The present inventors conducted the following studies in order to confirm the recovery of the package from yellow discoloration due to ultraviolet irradiation.
Using a resin piece containing the same material as the molding resin and containing the same amount of degraded resin recovery particles (titanium oxide particles), heat-treated at 170 ° C. for 2 hours assuming the curing of the die bonding resin, thereby discoloring yellow. UV light (wavelength peak wavelength: 370 nm) was irradiated for a time, and the chromaticity and reflectance before and after the irradiation of the UV light were measured.
[0041]
As a result, as shown in FIG. 9, the yellow discoloration after the heat treatment was significantly recovered after the irradiation with the ultraviolet rays.
Further, the deterioration of the reflectance after the heat treatment was recovered after the irradiation with the ultraviolet rays.
In the recovery of the reflectance, the recovery of the reflectance for light between 400 nm and 500 nm was remarkable.
[0042]
As is apparent from the above description, in the present invention, instead of the aging step, a resin deterioration recovery step by light irradiation using light of a predetermined wavelength may be separately used, and in this case, ultraviolet rays can be used.
Further, in the present invention, it is apparent that an aging step may be applied to a light emitting device configured using a light emitting element chip (nitride semiconductor light emitting element) that emits light having a wavelength in the ultraviolet region. Even in such a case, the same operation and effect as the embodiment can be obtained.
[0043]
【The invention's effect】
As is apparent from the above description, according to the present invention, it is possible to provide a light emitting device with high emission intensity (light extraction efficiency) and little color shift.
[Brief description of the drawings]
FIG. 1 is a perspective view of a light emitting device according to an embodiment of the present invention.
FIG. 2A is a plan view of a light emitting device according to an embodiment after a light emitting element chip is provided in a concave portion 14 of a package, and the concave portion 14 is filled with a translucent resin. It is sectional drawing about BB 'line of a).
FIG. 3 is a graph showing a light emission output with respect to an aging time in the light emitting device of the embodiment.
FIG. 4 is a graph showing a change in chromaticity due to heat of a resin of a package heat-treated at 170 ° C. for 2 hours, and recovery of the changed chromaticity by blue light.
FIG. 5 is a graph showing a change in chromaticity due to heat of a resin of a package heat-treated at 180 ° C. for 2 hours and recovery of the changed chromaticity by blue light.
FIG. 6 is a graph showing a change in chromaticity due to heat of a resin of a package heat-treated at 190 ° C. for 2 hours, and recovery of the changed chromaticity by blue light.
FIG. 7 is a graph showing a change in chromaticity due to heat of a resin of a package heat-treated at 200 ° C. for 2 hours and a recovery of the changed chromaticity by blue light.
FIG. 8 is a graph showing a change in chromaticity due to heat of a resin of a package heat-treated at 230 ° C. for 2 hours, and recovery of the changed chromaticity by blue light.
FIG. 9 is a graph showing a change in chromaticity after heat treatment of a package resin and recovery of the changed chromaticity by ultraviolet light in a modification according to the present invention.
FIG. 10 is a graph showing the reflectance of the package resin after the heat treatment and the recovery of the changed reflectance by ultraviolet light in the modification according to the present invention.
[Explanation of symbols]
1… Package,
10 molding resin,
14 ... recess,
21 ... Positive lead electrode,
22 ... negative lead electrode,
30 ... Light emitting element chip.

Claims (8)

凹部を有しリード電極とそのリード電極を保持する樹脂とを含んでなるパッケージと、前記凹部においてダイボンディングされた発光素子とを備えた発光装置であって、
前記パッケージを構成する樹脂には、前記発光素子が発生する光によって熱による樹脂の劣化を回復させることが可能な粒子が含まれており、
前記発光素子が発光する光の波長が、３６５ｎｍ〜５５０ｎｍの波長域にあることを特徴とする発光装置。A light emitting device comprising a package having a concave portion and including a lead electrode and a resin holding the lead electrode, and a light emitting element die-bonded in the concave portion,
The resin constituting the package contains particles capable of recovering the resin from being deteriorated due to heat by light generated by the light emitting element,
A light emitting device, wherein a wavelength of light emitted by the light emitting element is in a wavelength range of 365 nm to 550 nm. 前記発光素子が発光する光は、紫外領域、青色領域又は緑色領域のいずれかの波長領域に属している請求項１記載の発光装置。The light emitting device according to claim 1, wherein the light emitted by the light emitting element belongs to any one of a wavelength region of an ultraviolet region, a blue region, and a green region. 前記粒子は、酸化チタン、チタン酸ストロンチウム、ニオブ酸カリウムからなる群から選択される少なくとも一種である請求項１又は２記載の発光装置。The light emitting device according to claim 1, wherein the particles are at least one selected from the group consisting of titanium oxide, strontium titanate, and potassium niobate. 前記粒子は分光増感色素が担持されている請求項１〜３のうちのいずれか１つに記載の発光装置。The light emitting device according to claim 1, wherein the particles carry a spectral sensitizing dye. 前記粒子は、ルテニウム、クロムからなる群から選択される少なくとも一種である請求項１又は２記載の発光装置。The light emitting device according to claim 1, wherein the particles are at least one selected from the group consisting of ruthenium and chromium. 前記発光装置は前記発光素子がダイボンディングされた後に、前記発光素子を一定期間継続して発光させるエージング処理されている請求項１〜５のうちのいずれか１つに記載の発光装置。The light emitting device according to any one of claims 1 to 5, wherein the light emitting device is subjected to an aging process for causing the light emitting device to continuously emit light for a predetermined period after the light emitting device is die-bonded. 凹部を有しリード電極とそのリード電極を保持する樹脂とを含んでなるパッケージと、紫外領域、青色領域又は緑色領域のいずれかの波長領域に属する光を発生し前記凹部にダイボンディングされた発光素子とを備えた発光装置の製造方法であって、
上記パッケージを構成する樹脂が、前記発光素子が発生する光によって熱による樹脂の劣化を回復させることが可能な粒子を含むように前記パッケージを作製することと、
ダイボンディングされた後の前記発光素子を一定期間継続して発光させることとを含むことを特徴とする発光装置の製造方法。A package including a lead electrode having a concave portion and a resin holding the lead electrode; and a light emitting device that emits light belonging to a wavelength region of any of an ultraviolet region, a blue region, and a green region and is die-bonded to the concave portion. A method of manufacturing a light emitting device comprising an element and
Producing the package so that the resin constituting the package contains particles capable of recovering the resin from being thermally degraded by light generated by the light emitting element;
Continuously emitting light from the light emitting element after the die bonding for a certain period of time. 凹部を有しリード電極とそのリード電極を保持する樹脂とを含んでなるパッケージと、前記凹部にダイボンディングされた発光素子とを備えた発光装置の製造方法であって、
上記パッケージを構成する樹脂が、前記発光素子が発生する光によって熱による樹脂の劣化を回復させることが可能な粒子を含むように前記パッケージを作製することと、
前記発光素子がダイボンディングされた後に、少なくとも前記パッケージの凹部の側面に一定期間継続して、紫外光又は青色光を照射することを含むことを特徴とする発光装置の製造方法。A method for manufacturing a light emitting device, comprising: a package having a concave portion and including a lead electrode and a resin holding the lead electrode; and a light emitting element die-bonded to the concave portion,
Producing the package so that the resin constituting the package contains particles capable of recovering the resin from being thermally degraded by light generated by the light emitting element;
A method for manufacturing a light-emitting device, comprising: irradiating at least a side surface of a concave portion of the package with ultraviolet light or blue light after the light-emitting element is die-bonded.
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