JP2004228387A - Light emitting device - Google Patents

Light emitting device Download PDF

Info

Publication number
JP2004228387A
JP2004228387A JP2003015333A JP2003015333A JP2004228387A JP 2004228387 A JP2004228387 A JP 2004228387A JP 2003015333 A JP2003015333 A JP 2003015333A JP 2003015333 A JP2003015333 A JP 2003015333A JP 2004228387 A JP2004228387 A JP 2004228387A
Authority
JP
Japan
Prior art keywords
light emitting
emitting device
lead
package
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003015333A
Other languages
Japanese (ja)
Other versions
JP4633333B2 (en
Inventor
Shunsuke Otsuka
俊輔 大塚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koha Co Ltd
Original Assignee
Koha Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koha Co Ltd filed Critical Koha Co Ltd
Priority to JP2003015333A priority Critical patent/JP4633333B2/en
Publication of JP2004228387A publication Critical patent/JP2004228387A/en
Application granted granted Critical
Publication of JP4633333B2 publication Critical patent/JP4633333B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device which radiates sufficient heat even in case it is of a high-luminance or heavy-current type, with its unimpaired processability and excellent packageability. <P>SOLUTION: The terminal sections (outer leads) 2a, 3a of lead frames 2A-3C protrude out of a package 6, and are formed to be thicker than the parts (inner leads) within the package 6. The thickness of the terminal sections 2a, 3a is to be such that their lower surfaces P<SB>1</SB>, P<SB>3</SB>are flush with a plane extending from the lower surface P<SB>2</SB>of the package 6. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

【０００１】
【発明の属する技術分野】
本発明は、照明や、車載用、アミューズメント用および白色ＬＥＤなどの光源に適用される発光装置に関し、特に、高輝度や大電流のＬＥＤ光源に対応可能な発光装置に関する。
【０００２】
【従来の技術】
図７は、従来の半導体装置の断面図を示す。この半導体装置１０は、アイランド１４上に載置されたＩＣチップ１５と、一端がＩＣチップ１５とボンディングワイヤ１６，１７により接続され、他端がはんだ１９によりプリント基板２０と接続されるリードフレーム１２，１３と、ＩＣチップ１５およびボンディングワイヤ１６，１７で接続されたリードフレーム１２，１３の一部を封止するモールド樹脂（例えば、耐熱性を有する液晶ポリマー）によるパッケージ１８とを備えている（例えば、非特許文献１参照。）。
【０００３】
図７に示すように、リードフレーム１２，１３は、プリント基板２０上に半導体装置１０を安定して実装するために折り曲げ加工される。パッケージ１８の外側に突き出たリードフレーム１２は屈曲点１２ａ、１２ｂで、リードフレーム１３は屈曲点１３ａ、１３ｂでそれぞれ曲げられ、クランク状を呈している。先端部は、端子部１２ｃ、１３ｃを形成し、プリント基板２０にはんだ１９により接続している。
【０００４】
半導体装置１０において、ＩＣチップ１５からの発熱は、図７に示すようにパッケージ１８中の熱伝導によりリードフレーム１２，１３に伝導し、このリードフレーム１２，１３からプリント基板２０に矢印２１で示すように伝わる。また、ＩＣチップ１５からの発熱は、パッケージ１８の表面から矢印２２で示すように大気中に放熱され、またアイランド１４を介してパッケージ１８中を伝達し大気中に放熱される。同様に、リードフレーム１２，１３およびプリント基板２０の表面から大気中に放熱される。
【０００５】
また、このようなリードフレームを用いるものとしてＬＥＤ等の発光装置がある。このような発光装置によると、上記した半導体装置技術を応用できることから、高精度で小型化を図れる。
【０００６】
図８は、従来の発光装置のリードフレームの断面図を示し、（ａ）は薄型のリードフレーム、（ｂ）は厚型のリードフレームを示す。リードフレーム１２Ａ，１３Ａは、打ち抜きまたはエッチング加工によって形成される。一般に、双方のリードフレーム１２Ａ，１３Ａの間隙幅ｔ４は、打ち抜き対象である金属板の厚み、即ちリードフレーム１２Ａ，１３Ａの厚みｔ５以上の寸法が必要である。
【０００７】
また、図８（ｂ）に示すように、リードフレーム１２Ａ，１３Ａの厚みをｔ６で示すように厚くすることによって、リードフレーム１２Ａ，１３Ａが大電流タイプのものに対応可能とすると共に、その表面積の増加により放熱性を向上させている。この厚みｔ６のリードフレーム１２Ａ，１３Ａを打ち抜き加工で形成する場合、上記同様にリードフレーム１２Ａ，１３Ａの厚みｔ６以上の間隙幅ｔ７が必要である。
【０００８】
【非特許文献１】
菊池正典著、「やさしくわかる半導体」、初版、株式会社日本実業出版社、２０００年６月３０日、ｐ．２４６−２４７
【０００９】
【発明が解決しようとする課題】
しかし、従来の発光装置によると、以下の問題がある。
（１）リードフレーム１２Ａ，１３Ａは、ＩＣチップの発熱を逃がす役目を有しているが、近年の高輝度化、大電流化に対して、放熱が不十分であるという問題がある。
（２）リードフレーム１２Ａ，１３Ａは、打ち抜き後の曲げ加工により得られ、放熱を良くしようとするとリードフレームの厚みを厚くするのが好ましいが、厚くすると曲げ加工が困難となり、実装性が劣るという問題がある。
【００１０】
従って、本発明の目的は、高輝度タイプや大電流タイプの発光装置であっても、十分な放熱性を確保でき、加工性を損なうことなく、実装性に優れる発光装置を提供することにある。
【００１１】
【課題を解決するための手段】
本発明は、上記課題を解決するために、電圧の印加に基づいて発光する発光素子と、前記発光素子をインナーリードに搭載し、前記インナーリードに連続して設けられて前記インナーリードより放熱性を大にしたアウターリードを有するリードフレームと、前記アウターリードを露出させた状態で前記発光素子と前記インナーリードとを樹脂材料で一体的に封止する封止部とを有することを特徴とする発光装置を提供する。
【００１２】
上記した構成によれば、アウターリードの放熱性をインナーリードの放熱性よりも大としたので、発光素子が搭載されたインナーリードの熱はアウターリードに向かって伝導され、アウターリードにおいて放熱される。
【００１３】
【発明の実施の形態】
（第１の実施の形態）
図１（ａ）は、本発明の第１の実施の形態に係る発光装置の平面図を示し、図１（ｂ）は、（ａ）のＡ−Ａ断面図を示す。この発光装置１は、３対のリードフレーム２Ａ，２Ｂ，２Ｃ，３Ａ，３Ｂ，３Ｃ（以下、「２Ａ〜３Ｃ」という。）と、リードフレーム２Ａ，２Ｂ，２Ｃの先端部分（インナーリード）の上に載置されたＬＥＤ素子４Ａ，４Ｂ，４Ｃと、ＬＥＤ素子４Ａとリードフレーム３Ａとを電気的に接続するボンディングワイヤ５Ａと、ＬＥＤ素子４Ｂとリードフレーム３Ｂとを電気的に接続するボンディングワイヤ５Ｂと、ＬＥＤ素子４Ｃとリードフレーム３Ｃとを電気的に接続するボンディングワイヤ５Ｃと、各リードフレーム２Ａ〜３Ｃを支持するモールド樹脂によるパッケージ６と、パッケージ６の内面に形成される反射面６Ａと、パッケージ６に注入されて反射面６Ａ、ＬＥＤ素子４Ａ，４Ｂ，４Ｃを封止するモールド樹脂７とを備えている。
【００１４】
リードフレーム２Ａ〜３Ｃは、銅合金製で、パッケージ６から外部へ水平に所定の長さで突き出た部分（アウターリード）が基板実装用の端子部２ａ，３ａとなっている。
【００１５】
端子部２ａ，３ａの厚さｔ３は、図１（ｂ）に示すように、パッケージ６に収容される部分の厚みｔ２よりも厚くしてあり、第１の実施の形態では厚みｔ２の約２倍としている。
【００１６】
パッケージ６は、耐熱樹脂で矩形板状に成形して前述のようにリードフレーム２Ａ〜３Ｃを支持する。パッケージ６の内面には、ＬＥＤ素子４Ａ，４Ｂ，４Ｃとボンディングワイヤ５Ａ，５Ｂ，５Ｃそしてリードフレーム２Ａ，２Ｂ，２Ｃの先端部分が配置されており、パッケージ６の内面の周辺に反射壁６Ａが形成されている。
【００１７】
反射壁６Ａは、蒸着法によりアルミニウム膜で製膜する場合もあり、ＬＥＤ素子４Ａ，４Ｂ，４Ｃにより発光した光を前面側に集光するようになっている。
【００１８】
モールド樹脂７は、透光性を有するシリコーン樹脂、エポキシ樹脂等の樹脂を用いる。
【００１９】
端子部２ａの下面Ｐ１、および端子部３ａの下面Ｐ３は、図１（ｂ）に示すように、パッケージ６の下面Ｐ２の延長平面に一致する厚さに形成されている。つまり、プリント基板２０に双方の下面Ｐ１，Ｐ３が当接するようになされている。また、双方のリードフレーム２Ａ，３Ａの間隙幅ｔ１は、従来例で説明したように打ち抜き加工時の制限によって、パッケージ６に収容される薄い部分の厚みｔ２以上の寸法となっている。
【００２０】
上記した第１の実施の形態の発光装置１によれば、各リードフレーム２Ａ〜３Ｃにおけるパッケージ６の外部へ突き出た端子部２ａ，３ａの厚みｔ３を、パッケージ６に収容される部分の厚みｔ２よりも厚くしたので、リードフレームの表面積を増やすことができ、放熱性を良くすることができる。
【００２１】
また、端子部２ａ，３ａは、発光素子４Ａ，４Ｂ，４Ｃを搭載した部位より厚みが大であるので、端子部２ａ，３ａの熱容量は、発光素子４Ａ，４Ｂ，４Ｃを搭載した部位の熱容量より大となる。そのため、端子部２ａ，３ａは、発光素子４Ａ，４Ｂ，４Ｃなどを搭載した部位より温まり難くなるため、発光素子４Ａ，４Ｂ，４Ｃを搭載した部位より温度上昇が緩慢となって温度勾配が生じ、発光素子４Ａ，４Ｂ，４Ｃを搭載した部位から端子部２ａ，３ａに向かって熱伝導が行われる。そして、端子部２ａ，３ａにおいて放熱することができる。
【００２２】
また、端子部２ａ，３ａは、従来のように曲げ加工を不要にできるので、ＬＥＤ素子４Ａ〜４Ｃやボンディングワイヤ５Ａ〜５Ｃに曲げ加工に伴う負荷がかかってＬＥＤ素子４Ａ〜４Ｃやボンディングワイヤ５Ａ〜５Ｃがリードフレーム２Ａ〜３Ｃから外れるということがなくなり、実装性を向上させることができる。
【００２３】
また、曲げ加工を必要としないので、ＳＭＤ（Ｓｕｒｆａｃｅ Ｍｏｕｎｔｅｄ Ｄｅｖｉｃｅ）タイプのパッケージ６とすることが容易であり、生産性を向上させることができる。
【００２４】
また、各リードフレーム２Ａ〜３Ｃにおけるパッケージ６に収容される部分の厚みｔ２を薄くすることができるので、打ち抜き加工時に、その厚みｔ２に応じて制限される１対毎のリードフレーム間隙幅ｔ１を狭くすることができる。これによって、その間隙幅ｔ１に応じたサイズとなるパッケージ６の小型化を維持することができる。
【００２５】
また、従来のように間隙幅が広くならないので、ボンディング装置の配線スペック等を超え、ワイヤボンディングが不可能となることが無くなる。
【００２６】
従って、発光装置１が高輝度タイプや大電流タイプのものであっても、パッケージ６の小型化を維持することができ、製造時にＬＥＤ素子４Ａ〜４Ｃやボンディングワイヤ５Ａ〜５Ｃのリードフレーム２Ａ〜３Ｃからの外れが生じないようにすることができる。また、放熱性を向上させることができる。
【００２７】
（第２の実施の形態）
図２（ａ）は、本発明の第２の実施の形態に係る発光装置１の平面図を示し、図２（ｂ）は、（ａ）のＢ−Ｂ断面図を示す。この発光装置１が、第１の実施の形態に係る発光装置１と異なるところは、銅合金製のリードフレーム２Ａ〜３Ｃの端子部２ｂ，３ｂである。端子部２ｂ，３ｂは、パッケージ６に収容される部分の厚みｔ２よりも厚くし、プリント基板２０に実装される面（基板実装面）に対向する上面に複数の溝２ｇ、３ｇを等間隔で形成し、ヒートシンク構造としてある。
【００２８】
上記した第２の実施の形態に係る発光装置１によれば、複数の溝２ｇ、３ｇを上面に設けることによって、リードフレーム２Ａ〜３Ｃの表面積がより増加するので、より放熱性を向上させることができる。なお、溝２ｇ，３ｇの本数、間隔については発光装置に応じて最適な値に設定することが好ましい。また、溝２ｇ，３ｇを不等間隔としてもよい。他の効果は、第１の実施の形態の項に記載した効果と同様であるので、記載を省略する。
【００２９】
（第３の実施の形態）
図３（ａ）は、本発明の第３の実施の形態に係る発光装置の平面図を示し、図３（ｂ）は、（ａ）のＣ−Ｃ断面図を示す。この発光装置１が、第１の実施の形態の発光装置１と異なるところは、銅合金製のリードフレーム２Ａ〜３Ｃの端子部２ｃ，３ｃである。端子部２ｃ，３ｃは、パッケージ６の外部へ突き出た端子部２ｃ，３ｃの厚みｔ３を、パッケージ６に収容される部分の厚みｔ２よりも厚くしてある。厚みｔ３は、ここでは、厚みｔ２の約３倍の厚さであり、厚みｔ２分、上下方向に厚くなっている。
【００３０】
上記した第３の実施の形態の発光装置１によれば、各リードフレーム２Ａ〜３Ｃにおけるパッケージ６の外部へ突き出た端子部２ｃ，３ｃの厚みｔ３を、パッケージ６に収容される部分の厚みｔ２よりも３倍程度厚くしたので、フレーム面積を増やすことができ、放熱性を向上させることができる。なお、図３（ｂ）に示すように端子部２ｃ，３ｃを基板実装面側およびその反対側に厚くする他に、基板実装面側に３倍程度厚くするようにしてもよい。他の効果は、第１の実施の形態の項に記載した効果と同様であるので、記載を省略する。
【００３１】
（第４の実施の形態）
図４（ａ）は、本発明の第４の実施の形態に係る発光装置の平面図を示し、図４（ｂ）は、（ａ）のＤ−Ｄ断面図を示す。この発光装置１が、第１の実施の形態の発光装置１と異なるところは、銅合金製のリードフレーム２Ａ〜３Ｃの端子部２ｄ，３ｄである。端子部２ｄ，３ｄは、パッケージ６の外部へ突き出た端子部２ｄ，３ｄの厚みｔ３を、パッケージ６に収容される部分の厚みｔ２よりも厚くしてある。端子部２ｄ，３ｄは、基板実装面およびその面に対向する上面に複数の溝２ｇ、３ｇを形成し、ヒートシンク構造としたことにある。厚みｔ３は、ここでは、厚みｔ２の約３倍の厚さであり、厚みｔ２分、上下方向に厚くなっている。
【００３２】
上記した第４の実施の形態の発光装置１によれば、各リードフレーム２Ａ〜３Ｃにおけるパッケージ６の外部へ突き出た端子部２ｄ，３ｄの厚みｔ３を、パッケージ６に収容される部分の厚みｔ２よりも３倍程度厚くし、かつ溝２ｇ、３ｇを形成したので、リードフレーム面積を大きく増やすことができ、放熱性をさらに向上させることができる。なお、溝２ｇ，３ｇの本数、間隔については発光装置に応じて最適な値に設定することが好ましい。また、溝２ｇ，３ｇを不等間隔としてもよい。他の効果は、第１の実施の形態の項に記載した効果と同様であるので、記載を省略する。
【００３３】
（第５の実施の形態）
図５は、本発明の第５の実施の形態に係る発光装置の断面図を示す。この発光装置１が、第４の実施の形態の発光装置１と異なるところは、銅合金製のリードフレーム２Ａ〜３Ｃの端子部２ｅ，３ｅである。端子部２ｅ，３ｅは、基板実装面およびその面に対向する上面に複数の溝２ｈ、３ｈを形成し、ヒートシンク構造としてある。複数の溝２ｈ、３ｈおよび外周面２ｉ、３ｉは、ブラスト処理を施して表面を粗くしてある。
【００３４】
上記した第５の実施の形態の発光装置１によれば、端子部２ｅ，３ｅに形成した溝部をブラスト処理によって粗面化したので表面積を飛躍的に増やすことができ、放熱性を向上させることができる。なお、ブラスト処理以外の他の粗面化処理によって表面積を拡大させるようにしてもよい。また、溝２ｈ，３ｈの本数、間隔については発光装置に応じて最適な値に設定することが好ましい。また、溝２ｈ，３ｈを不等間隔としてもよい。他の効果は、第１の実施の形態の項に記載した効果と同様であるので、記載を省略する。
【００３５】
（第６の実施の形態）
図６（ａ）は、本発明の第６の実施の形態に係る発光装置の平面図を示し、図６（ｂ）は、（ａ）のＥ−Ｅ断面図を示す。この発光装置１が、第３の実施の形態の発光装置１と異なるところは、銅合金製のリードフレーム２Ａ〜３Ｃの端子部２ｆ，３ｆである。端子部２ｆ，３ｆの大きさは、第３の実施の形態の発光装置１の端子部２ｃ，３ｃと同じであるが、端子部２ｆ，３ｆは、基板実装面に向かう穴２ｊ、３ｊおよび端子部の表面に縦溝２ｋ，３ｋを形成し、ヒートシンク構造としたことにある。
【００３６】
上記した第６の実施の形態の発光装置１によれば、端子部２ｆ，３ｆに基板実装面に向かう穴２ｊ、３ｊおよび端子部の表面に縦溝２ｋ，３ｋを形成したため、リードフレーム２Ａ〜３Ｃの面積を増やすことができ、放熱性を向上させることができる。なお、端子部２ｆ，３ｆの表面にブラスト処理等の粗面化処理を施してもよい。他の効果は、第１の実施の形態の項に記載した効果と同様であるので、記載を省略する。
【００３７】
なお、本発明は、発光装置について説明したが、発光装置に限定されることなく、リードフレームを有する種々の半導体装置に適用することが可能である。また、端子部の厚さｔ３は、パッケージ６に収容される部分の厚みｔ２の２倍または３倍の厚さとして説明しているが、厚さに関してそれらの値に限定されない。さらに、リードフレームの材質は、銅合金に限らず、電気および熱を伝えやすい材質のものであれば、アルミニウム合金等の他の材質のものでよい。
【００３８】
【発明の効果】
以上説明したように、本発明によれば、アウターリードの放熱性をインナーリードの放熱性よりも大としたので、発光素子が搭載されたインナーリードの熱はアウターリードに向かって伝導され、アウターリードにおいて放熱されるため、高輝度タイプや大電流タイプの発光装置であっても、十分な放熱を確保できる、また、加工性を損なうことなく、実装性に優れる発光装置を得ることができる。
【図面の簡単な説明】
【図１】本発明の第１の実施の形態に係る発光装置の構成を示し、（ａ）は平面図、（ｂ）は（ａ）に示す発光装置のＡ−Ａ断面図である。
【図２】本発明の第２の実施の形態に係る発光装置の構成を示し、（ａ）は平面図、（ｂ）は（ａ）に示す発光装置のＢ−Ｂ断面図である。
【図３】本発明の第３の実施の形態に係る発光装置の構成を示し、（ａ）は平面図、（ｂ）は（ａ）に示す発光装置のＣ−Ｃ断面図である。
【図４】本発明の第４の実施の形態に係る発光装置の構成を示し、（ａ）は平面図、（ｂ）は（ａ）に示す発光装置のＤ−Ｄ断面図である。
【図５】本発明の第５の実施の形態に係る発光装置の構成を示す発光装置の断面図である。
【図６】本発明の第６の実施の形態に係る発光装置の構成を示し、（ａ）は平面図、（ｂ）は（ａ）に示す発光装置のＥ−Ｅ断面図である。
【図７】従来の半導体装置の構成を示す断面図である。
【図８】従来の発光装置のリードフレームの断面図を示し、（ａ）は薄型のリードフレーム、（ｂ）は厚型のリードフレームを示す。
【符号の説明】
１ 発光装置
２Ａ，２Ｂ，２Ｃ，３Ａ，３Ｂ，３Ｃ リードフレーム
２ａ，２ｂ，２ｃ，２ｄ，２ｅ，２ｆ 端子部
３ａ，３ｂ，３ｃ，３ｄ，３ｅ，３ｆ 端子部
２ｇ，２ｈ 溝
２ｉ，３ｉ 外周面
２ｊ，３ｊ 穴
２ｋ，３ｋ 縦溝
４Ａ，４Ｂ，４Ｃ ＬＥＤ素子
５Ａ，５Ｂ，５Ｃ ボンディングワイヤ
６ パッケージ
６Ａ 反射壁
７ モールド樹脂
１０ 半導体装置
１２，１３，１２Ａ，１３Ａ リードフレーム
１２ｃ 端子部
１４ アイランド
１５ ＩＣチップ
１６，１７ ボンディングワイヤ
１８ パッケージ
２０ プリント基板[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a light-emitting device that is applied to lighting, light sources such as in-vehicle, amusement, and white LEDs, and more particularly, to a light-emitting device that can handle high-luminance and high-current LED light sources.
[0002]
[Prior art]
FIG. 7 shows a cross-sectional view of a conventional semiconductor device. The semiconductor device 10 includes an IC chip 15 placed on an island 14, a lead frame 12 having one end connected to the IC chip 15 by bonding wires 16 and 17 and the other end connected to a printed circuit board 20 by solder 19. , 13 and a package 18 made of mold resin (for example, a liquid crystal polymer having heat resistance) for sealing a part of the lead frames 12, 13 connected by the IC chip 15 and the bonding wires 16, 17 ( For example, refer nonpatent literature 1.).
[0003]
As shown in FIG. 7, the lead frames 12 and 13 are bent to stably mount the semiconductor device 10 on the printed circuit board 20. The lead frame 12 protruding to the outside of the package 18 is bent at the bending points 12a and 12b, and the lead frame 13 is bent at the bending points 13a and 13b, respectively, to form a crank shape. The tip portion forms terminal portions 12 c and 13 c and is connected to the printed circuit board 20 by solder 19.
[0004]
In the semiconductor device 10, heat generated from the IC chip 15 is conducted to the lead frames 12 and 13 by heat conduction in the package 18 as shown in FIG. 7, and is indicated by an arrow 21 from the lead frames 12 and 13 to the printed board 20. It ’s like that. Further, the heat generated from the IC chip 15 is radiated from the surface of the package 18 to the atmosphere as indicated by an arrow 22, and is transmitted through the package 18 through the island 14 to be radiated to the atmosphere. Similarly, heat is radiated from the surfaces of the lead frames 12 and 13 and the printed circuit board 20 to the atmosphere.
[0005]
In addition, as a device using such a lead frame, there is a light emitting device such as an LED. According to such a light emitting device, since the semiconductor device technology described above can be applied, it is possible to reduce the size with high accuracy.
[0006]
8A and 8B are cross-sectional views of a lead frame of a conventional light emitting device, where FIG. 8A shows a thin lead frame and FIG. 8B shows a thick lead frame. The lead frames 12A and 13A are formed by punching or etching. In general, the gap width t 4 between both the lead frames 12A and 13A needs to be equal to or larger than the thickness of the metal plate to be punched, that is, the thickness t 5 of the lead frames 12A and 13A.
[0007]
Further, as shown in FIG. 8 (b), the lead frame 12A, by thickening as shown by t 6 the thickness of 13A, with the lead frame 12A, 13A is possible to cope with those of large-current type, the Heat dissipation is improved by increasing the surface area. Lead frame 12A in the thickness t 6, when forming at stamping 13A, similarly to the above the lead frame 12A, the thickness t 6 or more gap width t 7 of 13A is required.
[0008]
[Non-Patent Document 1]
Masanori Kikuchi, “Easy to understand semiconductor”, first edition, Nihon Jitsugyo Publishing Co., Ltd., June 30, 2000, p. 246-247
[0009]
[Problems to be solved by the invention]
However, the conventional light emitting device has the following problems.
(1) Although the lead frames 12A and 13A have a role of releasing heat generated by the IC chip, there is a problem that heat radiation is insufficient for the recent increase in luminance and current.
(2) The lead frames 12A and 13A are obtained by bending after punching, and it is preferable to increase the thickness of the lead frame to improve heat dissipation. However, if the thickness is increased, bending becomes difficult and the mountability is inferior. There's a problem.
[0010]
Accordingly, an object of the present invention is to provide a light-emitting device that can secure sufficient heat dissipation even in a high-luminance type or high-current type light-emitting device, and is excellent in mountability without impairing workability. .
[0011]
[Means for Solving the Problems]
In order to solve the above problems, the present invention provides a light emitting element that emits light based on application of a voltage, and the light emitting element is mounted on an inner lead, and is continuously provided on the inner lead and is more radiant than the inner lead. A lead frame having an outer lead with a large outer lead, and a sealing portion that integrally seals the light emitting element and the inner lead with a resin material in a state where the outer lead is exposed. A light emitting device is provided.
[0012]
According to the above configuration, since the heat dissipation of the outer lead is made larger than that of the inner lead, the heat of the inner lead on which the light emitting element is mounted is conducted toward the outer lead and is radiated at the outer lead. .
[0013]
DETAILED DESCRIPTION OF THE INVENTION
(First embodiment)
FIG. 1A is a plan view of the light emitting device according to the first embodiment of the present invention, and FIG. 1B is a cross-sectional view taken along line AA in FIG. The light emitting device 1 includes three pairs of lead frames 2A, 2B, 2C, 3A, 3B, and 3C (hereinafter referred to as “2A to 3C”) and tip portions (inner leads) of the lead frames 2A, 2B, and 2C. The LED elements 4A, 4B, 4C placed thereon, a bonding wire 5A that electrically connects the LED element 4A and the lead frame 3A, and a bonding wire that electrically connects the LED element 4B and the lead frame 3B. 5B, a bonding wire 5C that electrically connects the LED element 4C and the lead frame 3C, a package 6 made of mold resin that supports the lead frames 2A to 3C, and a reflective surface 6A that is formed on the inner surface of the package 6 And a mold resin 7 which is injected into the package 6 and seals the reflective surface 6A and the LED elements 4A, 4B and 4C.
[0014]
The lead frames 2A to 3C are made of a copper alloy, and portions (outer leads) protruding horizontally from the package 6 to the outside with a predetermined length are terminal portions 2a and 3a for board mounting.
[0015]
As shown in FIG. 1B, the thickness t 3 of the terminal portions 2a and 3a is larger than the thickness t 2 of the portion accommodated in the package 6, and in the first embodiment, the thickness t 2 About twice.
[0016]
The package 6 is formed into a rectangular plate shape with a heat resistant resin and supports the lead frames 2A to 3C as described above. LED elements 4A, 4B, and 4C, bonding wires 5A, 5B, and 5C and leading ends of lead frames 2A, 2B, and 2C are arranged on the inner surface of the package 6, and a reflection wall 6A is formed around the inner surface of the package 6. Is formed.
[0017]
The reflective wall 6A may be formed with an aluminum film by a vapor deposition method, and the light emitted from the LED elements 4A, 4B, and 4C is condensed on the front side.
[0018]
As the mold resin 7, a resin such as a translucent silicone resin or epoxy resin is used.
[0019]
The lower surface P 1 of the terminal portion 2 a and the lower surface P 3 of the terminal portion 3 a are formed to have a thickness that matches the extended plane of the lower surface P 2 of the package 6 as shown in FIG. That is, both lower surfaces P 1 and P 3 are brought into contact with the printed circuit board 20. Further, both of the lead frame 2A, 3A gap width t 1 of, by restriction of time stamping, as described in the conventional example, and has a thin portion of the thickness t 2 or more dimensions that are contained in the package 6.
[0020]
According to the light emitting device 1 of the first embodiment described above, the thickness t 3 of the terminal portions 2 a and 3 a protruding to the outside of the package 6 in each of the lead frames 2 A to 3 C is the thickness of the portion accommodated in the package 6. since thicker than t 2, it is possible to increase the surface area of the lead frame, it is possible to improve the heat dissipation.
[0021]
Further, since the terminal portions 2a and 3a are thicker than the portions where the light emitting elements 4A, 4B and 4C are mounted, the heat capacities of the terminal portions 2a and 3a are the heat capacities of the portions where the light emitting elements 4A, 4B and 4C are mounted. Become bigger. For this reason, the terminal portions 2a and 3a are less likely to be warmed than the portion where the light emitting elements 4A, 4B, 4C and the like are mounted, so that the temperature rise is slower than the portion where the light emitting elements 4A, 4B and 4C are mounted and a temperature gradient is generated. Then, heat conduction is performed from the portion where the light emitting elements 4A, 4B, and 4C are mounted toward the terminal portions 2a and 3a. And heat can be radiated in the terminal portions 2a and 3a.
[0022]
Further, since the terminal portions 2a and 3a can be made bending-free as in the prior art, the LED elements 4A to 4C and bonding wires 5A to 5C are subjected to a load accompanying bending and the LED elements 4A to 4C and bonding wires 5A. -5C is no longer detached from the lead frames 2A-3C, and the mountability can be improved.
[0023]
Further, since bending is not required, it is easy to obtain an SMD (Surface Mounted Device) type package 6, and productivity can be improved.
[0024]
Further, it is possible to reduce the thickness t 2 of the portion contained in the package 6 in the lead frame 2A～3C, during punching, the lead frame gap width of each pair is limited according to the thickness t 2 t 1 can be narrowed. As a result, the size reduction of the package 6 having a size corresponding to the gap width t 1 can be maintained.
[0025]
In addition, since the gap width is not wide as in the prior art, the wiring specifications of the bonding apparatus are exceeded and wire bonding is not impossible.
[0026]
Therefore, even if the light-emitting device 1 is of a high luminance type or a large current type, the package 6 can be kept downsized, and the LED elements 4A to 4C and the lead frames 2A to 5C of the bonding wires 5A to 5C can be manufactured at the time of manufacture. It is possible to prevent deviation from 3C. Moreover, heat dissipation can be improved.
[0027]
(Second Embodiment)
Fig.2 (a) shows the top view of the light-emitting device 1 which concerns on the 2nd Embodiment of this invention, FIG.2 (b) shows BB sectional drawing of (a). The light emitting device 1 is different from the light emitting device 1 according to the first embodiment in the terminal portions 2b and 3b of the lead frames 2A to 3C made of copper alloy. Terminal portions 2b, 3b is equidistant thicker than the portion of the thickness t 2 which is accommodated in a package 6, a plurality of grooves 2g on the upper surface opposite to the surface (substrate mounting surface) which is mounted on the printed circuit board 20, the 3g The heat sink structure is formed.
[0028]
According to the light emitting device 1 according to the second embodiment described above, by providing the plurality of grooves 2g and 3g on the upper surface, the surface areas of the lead frames 2A to 3C are further increased, so that heat dissipation is further improved. Can do. The number and interval of the grooves 2g and 3g are preferably set to optimum values according to the light emitting device. Moreover, it is good also considering the groove | channels 2g and 3g as an unequal space | interval. Since other effects are the same as the effects described in the first embodiment, description thereof is omitted.
[0029]
(Third embodiment)
FIG. 3A shows a plan view of a light emitting device according to the third embodiment of the present invention, and FIG. 3B shows a CC cross-sectional view of FIG. The light emitting device 1 is different from the light emitting device 1 of the first embodiment in the terminal portions 2c and 3c of lead frames 2A to 3C made of copper alloy. In the terminal portions 2 c and 3 c, the thickness t 3 of the terminal portions 2 c and 3 c protruding to the outside of the package 6 is thicker than the thickness t 2 of the portion accommodated in the package 6. The thickness t 3 is here about 3 times the thickness of the thickness t 2, the thickness t 2 minutes, is thicker in the vertical direction.
[0030]
According to the light emitting device 1 of the third embodiment described above, the thickness of the partial terminal portion 2c protruding to the outside of the package 6 in the lead frame 2A～3C, 3c the thickness t 3 of which are contained in the package 6 Having about 3 times thicker than t 2, it is possible to increase the frame area, it is possible to improve heat dissipation. In addition, as shown in FIG. 3B, the terminal portions 2c and 3c may be thickened about 3 times on the board mounting surface side in addition to thickening on the board mounting surface side and the opposite side. Since other effects are the same as the effects described in the first embodiment, description thereof is omitted.
[0031]
(Fourth embodiment)
FIG. 4A shows a plan view of a light emitting device according to the fourth embodiment of the present invention, and FIG. 4B shows a DD cross-sectional view of FIG. The light emitting device 1 is different from the light emitting device 1 of the first embodiment in the terminal portions 2d and 3d of the lead frames 2A to 3C made of copper alloy. Terminal portions 2d, 3d, the terminal portions 2d protruding to the outside of the package 6, the thickness t 3 of 3d, are thicker than the thickness t 2 of the portion contained in the package 6. The terminal portions 2d and 3d have a heat sink structure in which a plurality of grooves 2g and 3g are formed on a substrate mounting surface and an upper surface facing the surface. The thickness t 3 is here about 3 times the thickness of the thickness t 2, the thickness t 2 minutes, is thicker in the vertical direction.
[0032]
According to the light emitting device 1 of the above-described fourth embodiment, the thickness t 3 of the terminal portions 2 d and 3 d protruding to the outside of the package 6 in each of the lead frames 2 A to 3 C is the thickness of the portion accommodated in the package 6. and about 3 times thicker than t 2, and grooves 2g, so to form 3g, it is possible to increase greatly the lead frame area, the heat radiation property can be further improved. The number and interval of the grooves 2g and 3g are preferably set to optimum values according to the light emitting device. Moreover, it is good also considering the groove | channels 2g and 3g as an unequal space | interval. Since other effects are the same as the effects described in the first embodiment, description thereof is omitted.
[0033]
(Fifth embodiment)
FIG. 5 shows a sectional view of a light emitting device according to the fifth embodiment of the present invention. The light emitting device 1 is different from the light emitting device 1 of the fourth embodiment in the terminal portions 2e and 3e of the lead frames 2A to 3C made of copper alloy. The terminal portions 2e and 3e have a heat sink structure in which a plurality of grooves 2h and 3h are formed on a substrate mounting surface and an upper surface facing the surface. The plurality of grooves 2h and 3h and the outer peripheral surfaces 2i and 3i are roughened by blasting.
[0034]
According to the light emitting device 1 of the fifth embodiment described above, since the groove portions formed in the terminal portions 2e and 3e are roughened by blasting, the surface area can be dramatically increased, and the heat dissipation is improved. Can do. Note that the surface area may be increased by a roughening process other than the blasting process. In addition, the number and interval of the grooves 2h and 3h are preferably set to optimum values according to the light emitting device. The grooves 2h and 3h may be unequal intervals. Since other effects are the same as the effects described in the first embodiment, description thereof is omitted.
[0035]
(Sixth embodiment)
FIG. 6A is a plan view of a light emitting device according to a sixth embodiment of the present invention, and FIG. 6B is a cross-sectional view taken along line EE in FIG. The light emitting device 1 differs from the light emitting device 1 of the third embodiment in the terminal portions 2f and 3f of the lead frames 2A to 3C made of copper alloy. The sizes of the terminal portions 2f and 3f are the same as the terminal portions 2c and 3c of the light emitting device 1 of the third embodiment, but the terminal portions 2f and 3f are holes 2j and 3j and terminals that face the board mounting surface. The longitudinal grooves 2k and 3k are formed on the surface of the portion to form a heat sink structure.
[0036]
According to the light emitting device 1 of the sixth embodiment described above, since the holes 2j and 3j facing the board mounting surface and the vertical grooves 2k and 3k are formed on the surface of the terminal portion in the terminal portions 2f and 3f, the lead frames 2A to 2f are formed. The area of 3C can be increased, and heat dissipation can be improved. In addition, you may perform roughening processes, such as a blast process, on the surface of the terminal parts 2f and 3f. Since other effects are the same as the effects described in the first embodiment, description thereof is omitted.
[0037]
Note that although the present invention has been described with reference to a light-emitting device, the present invention is not limited to the light-emitting device and can be applied to various semiconductor devices having a lead frame. The thickness t 3 of the terminal unit has been described as a two or three times the thickness of the portion of the thickness t 2 which is contained in the package 6 is not limited to these values with respect to thickness. Furthermore, the material of the lead frame is not limited to a copper alloy, and may be made of other materials such as an aluminum alloy as long as it is a material that can easily transmit electricity and heat.
[0038]
【The invention's effect】
As described above, according to the present invention, since the heat dissipation of the outer lead is made larger than that of the inner lead, the heat of the inner lead on which the light emitting element is mounted is conducted toward the outer lead, and the outer lead Since heat is radiated from the lead, even a high-luminance type or high-current type light-emitting device can ensure sufficient heat dissipation, and a light-emitting device with excellent mountability can be obtained without impairing workability.
[Brief description of the drawings]
FIGS. 1A and 1B show a configuration of a light emitting device according to a first embodiment of the present invention, where FIG. 1A is a plan view and FIG. 1B is a cross-sectional view taken along line AA of the light emitting device shown in FIG.
FIGS. 2A and 2B show a configuration of a light emitting device according to a second embodiment of the present invention, in which FIG. 2A is a plan view and FIG. 2B is a cross-sectional view taken along line BB of the light emitting device shown in FIG.
3A and 3B show a configuration of a light emitting device according to a third embodiment of the present invention, in which FIG. 3A is a plan view and FIG. 3B is a cross-sectional view taken along the line C-C of the light emitting device shown in FIG.
4A and 4B show a configuration of a light emitting device according to a fourth embodiment of the present invention, in which FIG. 4A is a plan view, and FIG. 4B is a DD cross-sectional view of the light emitting device shown in FIG.
FIG. 5 is a cross-sectional view of a light emitting device showing a configuration of a light emitting device according to a fifth embodiment of the present invention.
6A and 6B show a configuration of a light-emitting device according to a sixth embodiment of the present invention, in which FIG. 6A is a plan view and FIG. 6B is an EE cross-sectional view of the light-emitting device shown in FIG.
FIG. 7 is a cross-sectional view showing a configuration of a conventional semiconductor device.
8A and 8B are cross-sectional views of a lead frame of a conventional light emitting device, where FIG. 8A shows a thin lead frame and FIG. 8B shows a thick lead frame.
[Explanation of symbols]
1 Light-emitting device 2A, 2B, 2C, 3A, 3B, 3C Lead frame 2a, 2b, 2c, 2d, 2e, 2f Terminal portion 3a, 3b, 3c, 3d, 3e, 3f Terminal portion 2g, 2h Groove 2i, 3i Surface 2j, 3j Hole 2k, 3k Vertical groove 4A, 4B, 4C LED element 5A, 5B, 5C Bonding wire 6 Package 6A Reflecting wall 7 Mold resin 10 Semiconductor device 12, 13, 12A, 13A Lead frame 12c Terminal portion 14 Island 15 IC chip 16, 17 Bonding wire 18 Package 20 Printed circuit board

Claims (6)

電圧の印加に基づいて発光する発光素子と、
前記発光素子をインナーリードに搭載し、前記インナーリードに連続して設けられて前記インナーリードより放熱性を大にしたアウターリードを有するリードフレームと、
前記アウターリードを露出させた状態で前記発光素子と前記インナーリードとを樹脂材料で一体的に封止する封止部とを有することを特徴とする発光装置。A light emitting element that emits light based on application of a voltage;
The light emitting element is mounted on an inner lead, and a lead frame having an outer lead that is provided continuously with the inner lead and has greater heat dissipation than the inner lead;
A light emitting apparatus comprising: a sealing portion that integrally seals the light emitting element and the inner lead with a resin material in a state where the outer lead is exposed. 前記リードフレームは、前記アウターリードの表面積を大にしたことを特徴とする請求項１に記載の発光装置。The light emitting device according to claim 1, wherein the lead frame has a larger surface area of the outer lead. 前記リードフレームは、前記アウターリードが前記インナーリードより大なる厚さを有することを特徴とする請求項１に記載の発光装置。The light emitting device according to claim 1, wherein the lead frame has a thickness in which the outer lead is larger than the inner lead. 前記リードフレームは、前記アウターリードの上面に放熱面積を拡大させる溝を有することを特徴とする請求項１に記載の発光装置。The light emitting device according to claim 1, wherein the lead frame has a groove for expanding a heat dissipation area on an upper surface of the outer lead. 前記リードフレームは、前記アウターリードの上面および基板実装面に放熱面積を拡大させる溝を有することを特徴とする請求項１記載の発光装置。The light emitting device according to claim 1, wherein the lead frame has a groove for expanding a heat dissipation area on an upper surface of the outer lead and a substrate mounting surface. 前記アウターリードは、前記インナーリードに連続して一線状に伸びた部分が基板実装面と面接合可能な厚さを有していることを特徴とする請求項１に記載の発光装置。2. The light emitting device according to claim 1, wherein the outer lead has a thickness that allows a portion of the outer lead extending continuously in a line to be continuous with the substrate mounting surface.
JP2003015333A 2003-01-23 2003-01-23 Light emitting device Expired - Fee Related JP4633333B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003015333A JP4633333B2 (en) 2003-01-23 2003-01-23 Light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003015333A JP4633333B2 (en) 2003-01-23 2003-01-23 Light emitting device

Publications (2)

Publication Number Publication Date
JP2004228387A true JP2004228387A (en) 2004-08-12
JP4633333B2 JP4633333B2 (en) 2011-02-16

Family

ID=32903123

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003015333A Expired - Fee Related JP4633333B2 (en) 2003-01-23 2003-01-23 Light emitting device

Country Status (1)

Country Link
JP (1) JP4633333B2 (en)

Cited By (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006134992A (en) * 2004-11-04 2006-05-25 Hitachi Displays Ltd Light source unit, lighting system using it and display device using lighting system
JP2006165542A (en) * 2004-12-06 2006-06-22 Samsung Electro Mech Co Ltd Light emitting device package
JP2006253528A (en) * 2005-03-14 2006-09-21 Opto Device Kenkyusho:Kk Reflecting light emitting diode unit, and light emitting diode
KR100628987B1 (en) 2005-07-28 2006-09-27 금산전자 주식회사 Package structure of light emitting diode and method of manufacturing thereof
JP2007027535A (en) * 2005-07-20 2007-02-01 Stanley Electric Co Ltd Optical semiconductor device
JP2007073575A (en) * 2005-09-05 2007-03-22 Matsushita Electric Ind Co Ltd Semiconductor light emitting device
JP2007288198A (en) * 2006-04-17 2007-11-01 Samsung Electro-Mechanics Co Ltd Light emitting diode package and its manufacturing method
WO2008072862A1 (en) * 2006-12-13 2008-06-19 Seoul Semiconductor Co., Ltd. Light emitting diode package with odds of lead fram removed from its surface and method for fabricating the same
JP2008205408A (en) * 2007-02-23 2008-09-04 Nichia Chem Ind Ltd Light-emitting device
CN100421269C (en) * 2005-06-03 2008-09-24 邢陈震仑 Packaging device for LED in low thermal resistance
JP2008258617A (en) * 2007-03-30 2008-10-23 Seoul Semiconductor Co Ltd Led package with metal pcb
JP2009065152A (en) * 2007-09-04 2009-03-26 Seoul Semiconductor Co Ltd Light emitting diode package having heat dissipating slugs
JP2011097094A (en) * 2004-11-30 2011-05-12 Nichia Corp Resin molding and surface-mount light-emitting device
JP2011138849A (en) * 2009-12-28 2011-07-14 Nichia Corp Light emitting device and method of manufacturing the same
CN102214767A (en) * 2010-04-07 2011-10-12 顺德工业股份有限公司 High-reliability packaging support structure of light emitting device
CN102214768A (en) * 2010-04-07 2011-10-12 顺德工业股份有限公司 Encapsulating bracket structure for high-reliability luminous device
JP2011211151A (en) * 2010-03-30 2011-10-20 Sdi Corp Light emitting device package frame with improved reliability
JP2012039121A (en) * 2010-08-09 2012-02-23 Lg Innotek Co Ltd Light emitting element
JP2012515440A (en) * 2009-01-14 2012-07-05 クリー ホイチョウ オプト リミテッド Multiple light emitting device package
JP2012209348A (en) * 2011-03-29 2012-10-25 Toshiba Lighting & Technology Corp Light-emitting device and illumination apparatus comprising the same
JP2013038221A (en) * 2011-08-08 2013-02-21 Citizen Holdings Co Ltd Light emitting device
JP2013524542A (en) * 2010-04-12 2013-06-17 クリー フエジョウ オプト リミテッド Thin package for surface mount devices
CN103531687A (en) * 2012-07-06 2014-01-22 隆达电子股份有限公司 Light emitting diode array
KR101365620B1 (en) * 2007-06-29 2014-02-24 서울반도체 주식회사 Polychromatic light emitting diode package
US8735920B2 (en) 2006-07-31 2014-05-27 Cree, Inc. Light emitting diode package with optical element
US8748915B2 (en) 2006-04-24 2014-06-10 Cree Hong Kong Limited Emitter package with angled or vertical LED
US8791471B2 (en) 2008-11-07 2014-07-29 Cree Hong Kong Limited Multi-chip light emitting diode modules
US8860049B2 (en) 2007-06-29 2014-10-14 Seoul Semiconductor Co., Ltd. Multi-light emitting diode package
US8866169B2 (en) 2007-10-31 2014-10-21 Cree, Inc. LED package with increased feature sizes
JP2014225511A (en) * 2013-05-15 2014-12-04 ローム株式会社 Led module and method for manufacturing led module
US9035439B2 (en) 2006-03-28 2015-05-19 Cree Huizhou Solid State Lighting Company Limited Apparatus, system and method for use in mounting electronic elements
US9070850B2 (en) 2007-10-31 2015-06-30 Cree, Inc. Light emitting diode package and method for fabricating same
US9240395B2 (en) 2010-11-30 2016-01-19 Cree Huizhou Opto Limited Waterproof surface mount device package and method
US9502624B2 (en) 2006-05-18 2016-11-22 Nichia Corporation Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same
US9601670B2 (en) 2014-07-11 2017-03-21 Cree, Inc. Method to form primary optic with variable shapes and/or geometries without a substrate
US9711489B2 (en) 2013-05-29 2017-07-18 Cree Huizhou Solid State Lighting Company Limited Multiple pixel surface mount device package
US9711703B2 (en) 2007-02-12 2017-07-18 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
US9831393B2 (en) 2010-07-30 2017-11-28 Cree Hong Kong Limited Water resistant surface mount device package
US10256385B2 (en) 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
US10431567B2 (en) 2010-11-03 2019-10-01 Cree, Inc. White ceramic LED package
US10622522B2 (en) 2014-09-05 2020-04-14 Theodore Lowes LED packages with chips having insulated surfaces

Cited By (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006134992A (en) * 2004-11-04 2006-05-25 Hitachi Displays Ltd Light source unit, lighting system using it and display device using lighting system
JP2011097094A (en) * 2004-11-30 2011-05-12 Nichia Corp Resin molding and surface-mount light-emitting device
JP2006165542A (en) * 2004-12-06 2006-06-22 Samsung Electro Mech Co Ltd Light emitting device package
US8124998B2 (en) 2004-12-06 2012-02-28 Samsung Electro-Mechanics Co., Ltd. Light emitting device package
JP2006253528A (en) * 2005-03-14 2006-09-21 Opto Device Kenkyusho:Kk Reflecting light emitting diode unit, and light emitting diode
CN100421269C (en) * 2005-06-03 2008-09-24 邢陈震仑 Packaging device for LED in low thermal resistance
JP2007027535A (en) * 2005-07-20 2007-02-01 Stanley Electric Co Ltd Optical semiconductor device
US8592851B2 (en) 2005-07-20 2013-11-26 Stanley Electric Co., Ltd. Optical semiconductor device and circuit
KR100628987B1 (en) 2005-07-28 2006-09-27 금산전자 주식회사 Package structure of light emitting diode and method of manufacturing thereof
WO2007013774A1 (en) * 2005-07-28 2007-02-01 Sailux, Inc. Light emitting device package structure, method of manufacturing the light emitting device package structure, and method of manufacturing light emitting device adopting the same
JP2007073575A (en) * 2005-09-05 2007-03-22 Matsushita Electric Ind Co Ltd Semiconductor light emitting device
US9035439B2 (en) 2006-03-28 2015-05-19 Cree Huizhou Solid State Lighting Company Limited Apparatus, system and method for use in mounting electronic elements
US8168453B2 (en) 2006-04-17 2012-05-01 Samsung Led Co., Ltd. Light emitting diode package and fabrication method thereof
JP2007288198A (en) * 2006-04-17 2007-11-01 Samsung Electro-Mechanics Co Ltd Light emitting diode package and its manufacturing method
US8735931B2 (en) 2006-04-17 2014-05-27 Samsung Electronics Co., Ltd. Light emitting diode package and fabrication method thereof
US8748915B2 (en) 2006-04-24 2014-06-10 Cree Hong Kong Limited Emitter package with angled or vertical LED
US9502624B2 (en) 2006-05-18 2016-11-22 Nichia Corporation Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same
US9929318B2 (en) 2006-05-18 2018-03-27 Nichia Corporation Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same
US9634204B2 (en) 2006-05-18 2017-04-25 Nichia Corporation Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same
US11631790B2 (en) 2006-05-18 2023-04-18 Nichia Corporation Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same
US10263161B2 (en) 2006-05-18 2019-04-16 Nichia Corporation Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same
US10686102B2 (en) 2006-05-18 2020-06-16 Nichia Corporation Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same
US10971656B2 (en) 2006-05-18 2021-04-06 Nichia Corporation Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same
US8735920B2 (en) 2006-07-31 2014-05-27 Cree, Inc. Light emitting diode package with optical element
WO2008072862A1 (en) * 2006-12-13 2008-06-19 Seoul Semiconductor Co., Ltd. Light emitting diode package with odds of lead fram removed from its surface and method for fabricating the same
US9711703B2 (en) 2007-02-12 2017-07-18 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
JP2008205408A (en) * 2007-02-23 2008-09-04 Nichia Chem Ind Ltd Light-emitting device
JP2008258617A (en) * 2007-03-30 2008-10-23 Seoul Semiconductor Co Ltd Led package with metal pcb
KR101365620B1 (en) * 2007-06-29 2014-02-24 서울반도체 주식회사 Polychromatic light emitting diode package
US8860049B2 (en) 2007-06-29 2014-10-14 Seoul Semiconductor Co., Ltd. Multi-light emitting diode package
US9412924B2 (en) 2007-09-04 2016-08-09 Seoul Semiconductor Co., Ltd. Light emitting diode package having heat dissipating slugs
JP2009065152A (en) * 2007-09-04 2009-03-26 Seoul Semiconductor Co Ltd Light emitting diode package having heat dissipating slugs
KR101365621B1 (en) * 2007-09-04 2014-02-24 서울반도체 주식회사 Light emitting diode package having heat dissipating slugs
US8860068B2 (en) 2007-09-04 2014-10-14 Seoul Semiconductor Co. Ltd. Light emitting diode package having heat dissipating slugs and wall
US9070850B2 (en) 2007-10-31 2015-06-30 Cree, Inc. Light emitting diode package and method for fabricating same
US10256385B2 (en) 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
US8866169B2 (en) 2007-10-31 2014-10-21 Cree, Inc. LED package with increased feature sizes
US11791442B2 (en) 2007-10-31 2023-10-17 Creeled, Inc. Light emitting diode package and method for fabricating same
US10892383B2 (en) 2007-10-31 2021-01-12 Cree, Inc. Light emitting diode package and method for fabricating same
US8791471B2 (en) 2008-11-07 2014-07-29 Cree Hong Kong Limited Multi-chip light emitting diode modules
US9722158B2 (en) 2009-01-14 2017-08-01 Cree Huizhou Solid State Lighting Company Limited Aligned multiple emitter package
JP2012515440A (en) * 2009-01-14 2012-07-05 クリー ホイチョウ オプト リミテッド Multiple light emitting device package
JP2011138849A (en) * 2009-12-28 2011-07-14 Nichia Corp Light emitting device and method of manufacturing the same
JP2011211151A (en) * 2010-03-30 2011-10-20 Sdi Corp Light emitting device package frame with improved reliability
CN102214767A (en) * 2010-04-07 2011-10-12 顺德工业股份有限公司 High-reliability packaging support structure of light emitting device
CN102214768A (en) * 2010-04-07 2011-10-12 顺德工业股份有限公司 Encapsulating bracket structure for high-reliability luminous device
JP2013524542A (en) * 2010-04-12 2013-06-17 クリー フエジョウ オプト リミテッド Thin package for surface mount devices
US9831393B2 (en) 2010-07-30 2017-11-28 Cree Hong Kong Limited Water resistant surface mount device package
JP2012039121A (en) * 2010-08-09 2012-02-23 Lg Innotek Co Ltd Light emitting element
US8519426B2 (en) 2010-08-09 2013-08-27 Lg Innotek Co., Ltd. Light emitting device and lighting system having the same
CN102376855A (en) * 2010-08-09 2012-03-14 Lg伊诺特有限公司 Light emitting device and lighting system comprising the same
US9041013B2 (en) 2010-08-09 2015-05-26 LG Innotek., Ltd. Light emitting device and lighing system having the same
US10431567B2 (en) 2010-11-03 2019-10-01 Cree, Inc. White ceramic LED package
US9240395B2 (en) 2010-11-30 2016-01-19 Cree Huizhou Opto Limited Waterproof surface mount device package and method
JP2012209348A (en) * 2011-03-29 2012-10-25 Toshiba Lighting & Technology Corp Light-emitting device and illumination apparatus comprising the same
JP2013038221A (en) * 2011-08-08 2013-02-21 Citizen Holdings Co Ltd Light emitting device
CN103531687A (en) * 2012-07-06 2014-01-22 隆达电子股份有限公司 Light emitting diode array
US10074645B2 (en) 2013-05-15 2018-09-11 Rohm Co., Ltd. LED module and method of manufacturing the same
US9865585B2 (en) 2013-05-15 2018-01-09 Rohm Co., Ltd. LED module and method of manufacturing the same
JP2014225511A (en) * 2013-05-15 2014-12-04 ローム株式会社 Led module and method for manufacturing led module
US9711489B2 (en) 2013-05-29 2017-07-18 Cree Huizhou Solid State Lighting Company Limited Multiple pixel surface mount device package
US9601670B2 (en) 2014-07-11 2017-03-21 Cree, Inc. Method to form primary optic with variable shapes and/or geometries without a substrate
US10622522B2 (en) 2014-09-05 2020-04-14 Theodore Lowes LED packages with chips having insulated surfaces

Also Published As

Publication number Publication date
JP4633333B2 (en) 2011-02-16

Similar Documents

Publication Publication Date Title
JP4633333B2 (en) Light emitting device
KR101068398B1 (en) Lighting device and method for making the same
US7804105B2 (en) Side view type LED package
US8113697B2 (en) Passive heat sink and light emitting diode lighting device using the same
JP5788854B2 (en) Circuit board
KR101134671B1 (en) LED lamp module with the cooling structure
JP2007251176A (en) Anodized metal substrate module
US20120125588A1 (en) Heat dissipation plate for projection-type ic package
US20120241773A1 (en) Led bar module with good heat dissipation efficiency
KR200329900Y1 (en) Adhesive type led lead frame
JP3770192B2 (en) Chip-type LED lead frame
JP2009054801A (en) Heat radiation member, and light emitting module equipped with the same
JP5352938B2 (en) Light emitting diode device
US7888852B1 (en) LED heat dissipation structure
WO2017188237A1 (en) Led light source device
JP2010003956A (en) Light emitting device and method of manufacturing the same
KR20090033592A (en) Led array module having improved heat dissipation charateristics
JP2012104542A (en) Lead frame for led light-emitting element, led package using the same and manufacturing method therefor
JP5178619B2 (en) Semiconductor device substrate and semiconductor device
TWI345316B (en)
KR100985917B1 (en) Lead Frame and Electronic Device of Effective Thermal Emission Structure for Very Large Current Optical Source Lamp and Manufacturing Method Thereof
KR20120064161A (en) Lead flame substrate for led package and method of manufacturing of the same
TW201901991A (en) Flip-chip type light-emitting diode and manufacturing method thereof
JP2008258530A (en) Semiconductor light-emitting device
JP2009021383A (en) Electronic component

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20051129

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080909

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080916

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081112

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090210

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090410

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090616

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090910

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20090925

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20091023

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20101117

R150 Certificate of patent or registration of utility model

Ref document number: 4633333

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131126

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees