JP2004221124A - Photodevice package and its manufacturing method - Google Patents

Photodevice package and its manufacturing method Download PDF

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Publication number
JP2004221124A
JP2004221124A JP2003003366A JP2003003366A JP2004221124A JP 2004221124 A JP2004221124 A JP 2004221124A JP 2003003366 A JP2003003366 A JP 2003003366A JP 2003003366 A JP2003003366 A JP 2003003366A JP 2004221124 A JP2004221124 A JP 2004221124A
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Prior art keywords
photo
photo device
thin plate
opening window
connection electrode
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Japanese (ja)
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Koichi Haneda
浩一 羽田
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Citizen Electronics Co Ltd
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Citizen Electronics Co Ltd
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Priority to JP2003003366A priority Critical patent/JP2004221124A/en
Publication of JP2004221124A publication Critical patent/JP2004221124A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a photodevice package to be mounted on an optical disk device, etc. which is formed to cope with the miniaturization and thinning of the disk device and so that the mounting surface of the photodevice is not seen from a transparent resin body. <P>SOLUTION: The package comprises a thin plate-like board 11 having an open window 12 at a center portion and IC connecting electrodes 17 disposed around the window 12, a photo IC 13 having bump electrodes 20 to be flip-chip-connected to the IC connecting electrodes 17, frames 15a, 15b disposed around the IC 13 disposed so as to locate a light receiver 14 in the window 12, and a sealing resin filled in the interior of the frames 15a, 15b and the window 12. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

【０００１】
【発明の属する技術分野】
本発明は、フォトＩＣなどのフォトデバイスを樹脂封止して形成したフォトデバイスパッケージ及びその製造方法に関するものである。
【０００２】
【従来の技術】
従来、この種のパッケージとしては、例えば特許文献１及び特許文献２に記載のものが知られている。これらの例は、図９に示すように、基本的にはベース基板１又はリードフレームの上にフォトＩＣ２を実装し、フォトＩＣ２の上面に設けられたＩＣ電極３とベース基板１上に設けられた基板電極４とをボンディングワイヤ５によって結線したのち、その上をシリコン樹脂などの透明樹脂体６によって封止してフォトデバイスパッケージ７としたものである。フォトＩＣ２の上面中央部には受光部８が設けられ、透明樹脂体６を通して光が入射される。
【０００３】
【特許文献１】
特開２０００−３２２９９０号公報
【特許文献２】
特開２０００−２８６２１２号公報
【０００４】
【発明が解決しようとする課題】
しかしながら、上記従来のフォトデバイスパッケージ７にあっては、ベース基板１の上面にフォトＩＣ２を実装し、フォトＩＣ２の上面の設けられたＩＣ電極３からボンディングワイヤ５を延ばしてベース基板１上の基板電極４に結線し、その上方を透明樹脂体６で封止する構造であるため、フォトデバイスパッケージ７の全体形状の厚みが増すと共に、パッケージ７の平面形状も大きくなってしまうなどの問題があった。特に、最近の光ディスク装置は小型化及び薄型化の傾向が強くなっているため、その中に収納される上記のフォトデバイスパッケージ７も同様の傾向が求められることになるが、上記従来のフォトデバイスパッケージ７ではダウンサイズ化に限界があった。
【０００５】
さらに、上記従来のフォトデバイスパッケージ７では透明樹脂体６を通してフォトＩＣ２の実装面が見えてしまうために、機能上は何ら問題とならないパッケージ内の外観的要因、例えばフォトＩＣ２の外表面の傷やボンディングワイヤ５の結線形状などが外観不良として除かれるといった問題があった。
【０００６】
そこで、本発明の目的は、光ディスク装置等の小型化及び薄型化に対応することができ、且つフォトデバイスの実装面が透明樹脂体から見えないようにしたフォトデバイスパッケージを提供することである。
【０００７】
また、本発明の他の目的は、多数のフォトデバイスパッケージを簡易な手段によって同時に製造することである。
【０００８】
【課題を解決するための手段】
上記の課題を解決するために、本発明の請求項１に係るフォトデバイスパッケージは、中央部に開口窓を有し、且つ開口窓の周囲にデバイス接続用電極が形成された薄板状基板と、前記開口窓に受光部が位置するように配置され、且つ前記デバイス接続用電極にフリップチップ接続されるバンプ電極が形成されたフォトデバイスと、前記フォトデバイスの周囲に配置される枠体と、前記枠体の内部及び開口窓に充填される封止用樹脂体とを備えたことを特徴とする。
【０００９】
この発明によれば、フォトデバイスのバンプ電極と薄板状基板のデバイス接続用電極とをフリップチップ接続しているので、従来のようなボンディングワイヤによる接続に比べてパッケージ全体の厚みを抑えることができる。また、このような接続手段を採用することでフォトデバイスの実装面を隠すことができ、パッケージの外観的要因による不良品の発生を抑えることができる。
【００１０】
また、本発明のフォトデバイスパッケージでは、前記薄板状基板の周囲に外部接続用電極が形成される一方、薄板状基板の面上に前記外部接続用電極と前記デバイス接続用電極との間をつなぐプリント配線が形成されることで、フォトデバイスと外部との導通を確実にしている。
【００１１】
さらに、上記の外部接続用電極は、前記フォトデバイスの周囲に配置される枠体にも形成することができる。
【００１２】
一方、本発明の請求項４に係るフォトデバイスパッケージの製造方法は、薄板状基板に開口窓とデバイス接続用電極とを形成し、前記開口窓に受光部が位置するようにフォトデバイスを配置すると共に、このフォトデバイスに設けられたバンプ電極を前記デバイス接続用電極にフリップチップ接続したのち、前記フォトデバイスの周囲に配置される枠体の内部及び開口窓に封止用樹脂体を充填することを特徴とする。また、前記薄板状基板に開口窓が多数形成されたフォトデバイスパッケージの集合基板を用いることで、多数のフォトデバイスパッケージを簡易な手段で同時に製造することができる。
【００１３】
【発明の実施の形態】
以下、添付図面に基づいて本発明に係るフォトデバイスパッケージの実施形態を詳細に説明する。図１乃至図４は本発明に係るフォトデバイスパッケージの一実施形態を示したものである。ここで、図１はフォトデバイスパッケージの全体形状を示す斜視図、図２は分解斜視図である。また、図３は上記図１のＡ−Ａ線断面図、図４は上記図１のＢ−Ｂ線断面図である。
【００１４】
図１乃至図４に示したように、この実施形態に係るフォトデバイスパッケージ１０は、中央部に開口窓１２が形成された薄板状基板１１と、前記開口窓１２に受光部１４が位置するように配置されたフォトＩＣ１３と、このフォトＩＣ１３の両側に配置された一対の枠体１５ａ，１５ｂと、前記枠体１５ａ，１５ｂの内部及び開口窓１２に充填される封止用樹脂体１６ａ，１６ｂとを備える。
【００１５】
前記薄板状基板１１は、例えば、ガラスエポキシ基板やＢＴレジン基板（Ｂｉｓｍａｌｅｉｍｉｄｅ Ｔｒｉａｚｉｎｅ Ｒｅｓｉｎ）を矩形状に形成したものであり、この外形形状に対応して矩形状に開設された開口窓１２の両側縁には前記フォトＩＣ１３のＩＣ接続用電極１７が配列されている。また、薄板状基板１１の両側縁には外部接続用電極１８が配列されると共に、薄板状基板１１の面上には前記ＩＣ接続用電極１７と外部接続用電極１８との間をつなぐプリント配線１９が形成されている。
【００１６】
上記薄板状基板１１の上に配置されるフォトＩＣ１１は、光ディスク装置等に用いられるものであり、中央部に設けられたフォトダイオードからなる受光部１４と、その周りに配置された信号処理部（図示せず）とを一つのパッケージに内蔵したワンチップモジュールである。矩形状に形成されたフォトＩＣ１１の受光部１４側の面上には両側縁にバンプ電極２０が形成されている。このバンプ電極２０は、前記薄板状基板１１に配列されたＩＣ接続用電極１７と対応しており、フォトＩＣ１１の搭載時にはバンプ電極２０をＩＣ接続用電極１７にフリップチップ接続することによって導通が図られると共に、受光部１４が前記開口窓１２に対応する位置で固定される。
【００１７】
一方、前記フォトＩＣ１３の両側に配置される一対の枠体１５ａ，１５ｂは、図１及び図２に示したように、前記薄板状基板１１より厚みのある角形部材によって形成される。そして、この枠体１５ａ，１５ｂは、前記薄板状基板１１の両側縁に沿って配置され、薄板状基板１１の面上に接着されることで、フォトＩＣ１３の両側に立設される。また、枠体１５ａ，１５ｂの外側面には、前記薄板状基板１１の両側縁に形成された外部接続用電極１８がそのまま連続して一体に形成されている。
【００１８】
前記枠体１５ａ，１５ｂの内部及び開口窓１２に充填される封止用樹脂体１６ａ，１６ｂは、前記フォトＩＣ１３を封止すると共に、フォトＩＣ１３の受光部１４を保護するためのものであり、透明のシリコン樹脂やエポキシ樹脂などを枠体１５ａ，１５ｂによって囲まれた空間内や開口窓１２の内部に充填することで形成される。透明樹脂の種類を枠体１５ａ，１５ｂの内部と開口窓１２とで変えてもよいが、作業工程を考慮した場合は同じ種類の透明樹脂を一工程で充填した方が効率的である。
【００１９】
上記のように構成されたフォトデバイスパッケージ１０にあっては、フォトＩＣ１３の接続を従来のようなボンディングワイヤではなく、バンプ電極２０によって接続しているので、パッケージ全体の厚みを抑えることができる。また、フォトＩＣ１３の実装面を薄板状基板１１によって隠してしまうことができる。即ち、枠体１５ａ，１５ｂ側からは封止用樹脂体１６ａを通してフォトＩＣ１３の背面が見え、開口窓１２からは封止用樹脂体１６ｂを通してフォトＩＣ１３の受光部１４が見えるだけなので、パッケージの外観的要因による不良品がほとんど出ない。
【００２０】
次に、上記フォトデバイスパッケージ１０の製造方法を図５乃至図８に基づいて説明する。先ず、図５及び図６に示したように、長尺の角形部材２２が配置された薄板集合基板２１を準備し、この薄板集合基板２１に開口窓１２を所定間隔毎に開設する。前記各形部材２２は薄板状基板１１の枠体１５ａ，１５ｂを構成するものである。次に、各開口窓１２の周囲にＩＣ接続用電極１７を形成すると共に、外部接続用電極１８用のスルーホール２３とプリント配線１９とを形成する（第１製造工程）。このとき、前記角形部材２２にも外部接続用電極１８用のスルーホール２４が形成される。
【００２１】
次の製造工程では、図５及び図７に示したように、薄板集合基板２１上にフォトＩＣ１３を配置し、ＩＣ接続用電極１７にフォトＩＣ１３のバンプ電極２０をフリップチップ実装する（第２製造工程）。図７に示した例では、フォトＩＣ１３の受光部１４が見える面を裏返した状態で実装される。
【００２２】
前記薄板集合基板２１上にフォトＩＣ１３を実装した後、図５及び図８に示したように、平行に並んだ多数の角形部材２２の間に透明樹脂を充填して封止用樹脂体１６ａを形成すると共に、薄板集合基板２１に設けられている開口窓１２にも同様の透明樹脂を充填する（第３製造工程）。そして、透明樹脂を固化させてパッケージ集合体２５とした後、このパッケージ集合体２５をＸ，Ｙ方向に所定寸法ごとにダイシングし、図１に示したような個々のフォトデバイスパッケージ１０に切り離して全ての製造工程を終了する（第４製造工程）。なお、本発明の製造方法は、上述した実施形態の製造方法に限定されないこと勿論である。
【００２３】
【発明の効果】
以上説明したように、本発明に係るフォトデバイスパッケージによれば、フォトデバイスにバンプ電極を設け、これを薄板状基板のデバイス接続用電極にフリップチップ実装したので、従来のようなボンディングワイヤによる実装手段に比べてパッケージ全体の厚みを大幅に抑えることができた。
【００２４】
また、本発明によれば、フォトデバイスの実装面を隠すことができるので、パッケージの外観的要因による不良品の発生を抑えることができた。
【００２５】
さらに、本発明のフォトデバイスパッケージの製造方法によれば、多数のフォトデバイスパッケージを簡易な手段で同時に製造することができた。
【図面の簡単な説明】
【図１】本発明に係るフォトデバイスパッケージの外観形状を示す斜視図である。
【図２】前記フォトデバイスパッケージの分解斜視図である。
【図３】図１に示したフォトデバイスパッケージのＡ−Ａ線断面図である。
【図４】図１に示したフォトデバイスパッケージのＢ−Ｂ線断面図である。
【図５】本発明に係るフォトデバイスパッケージの製造工程図である。
【図６】本発明に係るフォトデバイスパッケージの第１製造工程を示す斜視図である。
【図７】本発明に係るフォトデバイスパッケージの第２製造工程を示す斜視図である。
【図８】本発明に係るフォトデバイスパッケージの第３，４製造工程を示す斜視図である。
【図９】従来のフォトデバイスパッケージの一例を示す斜視図である。
【符号の説明】
１０ フォトデバイスパッケージ
１１ 薄板状基板
１２ 開口窓
１３ フォトＩＣ
１４ 受光部
１５ａ，１５ｂ 枠体
１６ａ，１６ｂ 封止用樹脂体
１７ ＩＣ接続用電極
１８ 外部接続用電極
１９ プリント配線
２０ バンプ電極[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a photo device package formed by resin-sealing a photo device such as a photo IC and a method for manufacturing the same.
[0002]
[Prior art]
Conventionally, as this type of package, for example, those described in Patent Literature 1 and Patent Literature 2 are known. In these examples, as shown in FIG. 9, a photo IC 2 is basically mounted on a base substrate 1 or a lead frame, and an IC electrode 3 provided on the upper surface of the photo IC 2 and the IC chip 3 are provided on the base substrate 1. After connecting the substrate electrode 4 with the bonding wire 5, the upper portion is sealed with a transparent resin body 6 such as a silicon resin to form a photo device package 7. A light receiving unit 8 is provided at the center of the upper surface of the photo IC 2, and light enters through the transparent resin body 6.
[0003]
[Patent Document 1]
Japanese Patent Application Laid-Open No. 2000-322990 [Patent Document 2]
JP 2000-286212 A
[Problems to be solved by the invention]
However, in the above-described conventional photo device package 7, the photo IC 2 is mounted on the upper surface of the base substrate 1, and the bonding wires 5 are extended from the IC electrodes 3 provided on the upper surface of the photo IC 2, thereby forming the substrate on the base substrate 1. Since the structure is such that the electrode 4 is connected and the upper part thereof is sealed with the transparent resin body 6, the thickness of the overall shape of the photo device package 7 increases and the planar shape of the package 7 also increases. Was. In particular, since recent optical disk devices tend to be smaller and thinner, the same tendency is required for the above-described photo device package 7 housed therein. Package 7 had a limit in downsizing.
[0005]
Furthermore, since the mounting surface of the photo IC 2 is visible through the transparent resin body 6 in the above-described conventional photo device package 7, external factors in the package that do not cause any problem in function, such as scratches on the outer surface of the photo IC 2 or There is a problem that the connection shape of the bonding wire 5 is excluded as poor appearance.
[0006]
SUMMARY OF THE INVENTION An object of the present invention is to provide a photo device package which can cope with miniaturization and thickness reduction of an optical disc device or the like, and in which the mounting surface of the photo device is not seen from a transparent resin body.
[0007]
Another object of the present invention is to simultaneously manufacture a large number of photo device packages by simple means.
[0008]
[Means for Solving the Problems]
In order to solve the above-mentioned problem, a photo device package according to claim 1 of the present invention has a thin plate-shaped substrate having an opening window at a central portion and having device connection electrodes formed around the opening window, A photo device in which a light receiving portion is located in the opening window, and a bump electrode that is flip-chip connected to the device connection electrode is formed, and a frame disposed around the photo device; A sealing resin body filled in the inside of the frame and in the opening window.
[0009]
According to the present invention, since the bump electrodes of the photo device and the device connection electrodes of the thin plate substrate are flip-chip connected, the thickness of the entire package can be reduced as compared with the conventional connection using bonding wires. . Further, by adopting such connection means, the mounting surface of the photo device can be hidden, and the occurrence of defective products due to external factors of the package can be suppressed.
[0010]
Further, in the photo device package of the present invention, the external connection electrode is formed around the thin plate substrate, and the external connection electrode and the device connection electrode are connected on the surface of the thin plate substrate. The formation of the printed wiring ensures conduction between the photo device and the outside.
[0011]
Furthermore, the above-mentioned external connection electrode can be formed also on a frame disposed around the photo device.
[0012]
On the other hand, in the method of manufacturing a photo device package according to claim 4 of the present invention, an opening window and a device connection electrode are formed in a thin plate-like substrate, and a photo device is arranged such that a light receiving portion is located in the opening window. At the same time, after the bump electrode provided on the photo device is flip-chip connected to the device connection electrode, the inside of the frame and the opening window arranged around the photo device are filled with a sealing resin body. It is characterized by. In addition, by using an aggregate substrate of a photo device package in which a large number of opening windows are formed in the thin plate-shaped substrate, a large number of photo device packages can be manufactured simultaneously by simple means.
[0013]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, an embodiment of a photo device package according to the present invention will be described in detail with reference to the accompanying drawings. 1 to 4 show one embodiment of a photo device package according to the present invention. Here, FIG. 1 is a perspective view showing the overall shape of the photo device package, and FIG. 2 is an exploded perspective view. FIG. 3 is a sectional view taken along line AA of FIG. 1, and FIG. 4 is a sectional view taken along line BB of FIG.
[0014]
As shown in FIGS. 1 to 4, a photo device package 10 according to this embodiment has a thin plate-shaped substrate 11 having an opening window 12 formed in the center and a light receiving unit 14 located in the opening window 12. , A pair of frames 15 a, 15 b disposed on both sides of the photo IC 13, and sealing resin bodies 16 a, 16 b filled in the inside of the frames 15 a, 15 b and the opening window 12. And
[0015]
The thin plate-shaped substrate 11 is, for example, a glass epoxy substrate or a BT resin substrate (Bismaleimide Triazine Resin) formed in a rectangular shape. The IC connection electrodes 17 of the photo IC 13 are arranged in the. External connection electrodes 18 are arranged on both side edges of the thin plate-shaped substrate 11, and printed wiring connecting the IC connection electrode 17 and the external connection electrode 18 is formed on the surface of the thin plate-shaped substrate 11. 19 are formed.
[0016]
The photo IC 11 disposed on the thin substrate 11 is used for an optical disk device or the like, and includes a light receiving section 14 composed of a photodiode provided at a central portion and a signal processing section ( (Not shown) in a single package. Bump electrodes 20 are formed on both sides of the photo IC 11 formed in a rectangular shape on the light receiving unit 14 side. The bump electrodes 20 correspond to the IC connection electrodes 17 arranged on the thin plate-shaped substrate 11. When the photo IC 11 is mounted, the bump electrodes 20 are flip-chip connected to the IC connection electrodes 17 to achieve conduction. At the same time, the light receiving unit 14 is fixed at a position corresponding to the opening window 12.
[0017]
On the other hand, a pair of frames 15a and 15b arranged on both sides of the photo IC 13 are formed of a rectangular member thicker than the thin plate-shaped substrate 11, as shown in FIGS. The frame members 15a and 15b are arranged along both side edges of the thin plate-shaped substrate 11, and are adhered on the surface of the thin plate-shaped substrate 11, so as to be erected on both sides of the photo IC 13. External connection electrodes 18 formed on both side edges of the thin plate-shaped substrate 11 are continuously and integrally formed on the outer surfaces of the frame bodies 15a and 15b.
[0018]
The sealing resin bodies 16a and 16b filling the inside of the frame bodies 15a and 15b and the opening window 12 are for sealing the photo IC 13 and protecting the light receiving portion 14 of the photo IC 13. It is formed by filling a transparent silicon resin or an epoxy resin into the space surrounded by the frames 15a and 15b and the inside of the opening window 12. Although the type of the transparent resin may be changed between the inside of the frames 15a and 15b and the opening window 12, it is more efficient to fill the same type of transparent resin in one step in consideration of the working process.
[0019]
In the photo device package 10 configured as described above, the connection of the photo IC 13 is performed by the bump electrode 20 instead of the conventional bonding wire, so that the thickness of the entire package can be suppressed. Further, the mounting surface of the photo IC 13 can be hidden by the thin plate substrate 11. That is, the back of the photo IC 13 can be seen from the frame bodies 15a and 15b through the sealing resin body 16a, and the light receiving portion 14 of the photo IC 13 can be seen from the opening window 12 through the sealing resin body 16b. There are almost no defective products due to physical factors.
[0020]
Next, a method for manufacturing the photo device package 10 will be described with reference to FIGS. First, as shown in FIG. 5 and FIG. 6, a thin plate assembly substrate 21 on which a long rectangular member 22 is arranged is prepared, and openings 12 are opened in the thin plate assembly substrate 21 at predetermined intervals. The shape members 22 constitute the frames 15a and 15b of the thin plate-like substrate 11. Next, an IC connection electrode 17 is formed around each opening window 12, and a through hole 23 for an external connection electrode 18 and a printed wiring 19 are formed (first manufacturing step). At this time, a through hole 24 for the external connection electrode 18 is also formed in the square member 22.
[0021]
In the next manufacturing process, as shown in FIG. 5 and FIG. 7, the photo IC 13 is arranged on the thin board 21 and the bump electrode 20 of the photo IC 13 is flip-chip mounted on the IC connecting electrode 17 (second manufacturing). Process). In the example illustrated in FIG. 7, the photo IC 13 is mounted with the surface on which the light receiving unit 14 is visible turned upside down.
[0022]
After the photo IC 13 is mounted on the thin plate assembly board 21, as shown in FIGS. 5 and 8, a transparent resin is filled between a plurality of parallel rectangular members 22 to form a sealing resin body 16a. At the same time, the same transparent resin is filled into the opening windows 12 provided in the thin plate collective substrate 21 (third manufacturing step). Then, after the transparent resin is solidified to form the package assembly 25, the package assembly 25 is diced in the X and Y directions for each predetermined dimension, and cut into individual photo device packages 10 as shown in FIG. All the manufacturing steps are completed (fourth manufacturing step). Note that the manufacturing method of the present invention is not limited to the manufacturing method of the above-described embodiment.
[0023]
【The invention's effect】
As described above, according to the photo device package of the present invention, the bump electrode is provided on the photo device, and the bump electrode is flip-chip mounted on the device connection electrode of the thin plate substrate. The thickness of the entire package was significantly reduced as compared with the means.
[0024]
Further, according to the present invention, since the mounting surface of the photo device can be hidden, the occurrence of defective products due to external factors of the package can be suppressed.
[0025]
Further, according to the photo device package manufacturing method of the present invention, a large number of photo device packages can be simultaneously manufactured by simple means.
[Brief description of the drawings]
FIG. 1 is a perspective view showing an external shape of a photo device package according to the present invention.
FIG. 2 is an exploded perspective view of the photo device package.
FIG. 3 is a cross-sectional view taken along line AA of the photo device package shown in FIG.
FIG. 4 is a sectional view of the photo device package shown in FIG. 1 taken along line BB.
FIG. 5 is a manufacturing process diagram of the photo device package according to the present invention.
FIG. 6 is a perspective view showing a first manufacturing step of the photo device package according to the present invention.
FIG. 7 is a perspective view showing a second manufacturing step of the photo device package according to the present invention.
FIG. 8 is a perspective view showing third and fourth manufacturing steps of the photo device package according to the present invention.
FIG. 9 is a perspective view showing an example of a conventional photo device package.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 Photo device package 11 Thin board 12 Opening window 13 Photo IC
14 Light-receiving parts 15a, 15b Frames 16a, 16b Resin for sealing 17 Electrode for IC connection 18 Electrode for external connection 19 Printed wiring 20 Bump electrode

Claims (5)

中央部に開口窓を有し、且つ開口窓の周囲にデバイス接続用電極が形成された薄板状基板と、
前記開口窓に受光部が位置するように配置され、且つ前記デバイス接続用電極にフリップチップ接続されるバンプ電極が形成されたフォトデバイスと、
前記フォトデバイスの周囲に配置される枠体と、
前記枠体の内部及び開口窓に充填される封止用樹脂体と、
を備えたことを特徴とするフォトデバイスパッケージ。A thin plate-shaped substrate having an opening window in the center and having device connection electrodes formed around the opening window;
A photo device in which a light receiving unit is located in the opening window, and a bump electrode that is flip-chip connected to the device connection electrode is formed;
A frame disposed around the photo device;
A sealing resin body filled into the inside of the frame body and the opening window,
A photo device package comprising: 前記薄板状基板の周囲には外部接続用電極が形成され、薄板状基板の面上には前記外部接続用電極と前記デバイス接続用電極との間をつなぐプリント配線が形成されてなる請求項１記載のフォトデバイスパッケージ。2. An external connection electrode is formed around the thin plate substrate, and a printed wiring connecting the external connection electrode and the device connection electrode is formed on a surface of the thin plate substrate. The photo device package as described. 前記枠体には前記薄板状基板に形成された外部接続用電極と一体接続される外部接続用電極の一部が形成されてなる請求項１又は２記載のフォトデバイスパッケージ。3. The photo device package according to claim 1, wherein a part of an external connection electrode integrally connected to an external connection electrode formed on the thin plate-shaped substrate is formed on the frame body. 薄板状基板に開口窓とデバイス接続用電極とを形成し、前記開口窓に受光部が位置するようにフォトデバイスを配置すると共に、このフォトデバイスに設けられたバンプ電極を前記デバイス接続用電極にフリップチップ接続したのち、前記フォトデバイスの周囲に配置される枠体の内部及び開口窓に封止用樹脂体を充填することを特徴とするフォトデバイスパッケージの製造方法。An opening window and a device connection electrode are formed on a thin plate-like substrate, and a photo device is arranged so that a light receiving portion is located in the opening window, and a bump electrode provided on the photo device is used as the device connection electrode. A method of manufacturing a photo device package, comprising: filling a sealing resin body inside a frame body and an opening window disposed around the photo device after flip-chip connection. 前記薄板状基板は開口窓が多数形成されたフォトデバイスパッケージの集合基板からなり、それぞれの開口窓にフォトデバイスを配置すると共に各フォトデバイスのバンプ電極を対応するデバイス接続用電極にフリップチップ接続し、前記フォトデバイスの周囲に配置される枠体の内部及び開口窓に封止用樹脂体を充填してフォトデバイスパッケージの集合体を形成したのち、この集合体を個々のフォトデバイスパッケージごとに切断する請求項４記載のフォトデバイスパッケージの製造方法。The thin plate-shaped substrate is composed of a collective substrate of a photo device package in which a large number of opening windows are formed, and a photo device is arranged in each of the opening windows, and a bump electrode of each photo device is flip-chip connected to a corresponding device connection electrode. After filling a sealing resin body into the inside of the frame body and the opening window arranged around the photo device to form an aggregate of the photo device package, the aggregate is cut into individual photo device packages. The method for manufacturing a photo device package according to claim 4.
JP2003003366A 2003-01-09 2003-01-09 Photodevice package and its manufacturing method Pending JP2004221124A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101286642B1 (en) * 2012-02-07 2013-07-22 도시바삼성스토리지테크놀러지코리아 주식회사 Photodector unit and optical pickup and optical information storage medium system employing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101286642B1 (en) * 2012-02-07 2013-07-22 도시바삼성스토리지테크놀러지코리아 주식회사 Photodector unit and optical pickup and optical information storage medium system employing the same
US20130205309A1 (en) * 2012-02-07 2013-08-08 Toshiba Samsung Storage Technology Korea Corporation Photodector unit, optical pickup including the photodector unit, and optical system including the optical pickup
CN103247309A (en) * 2012-02-07 2013-08-14 东芝三星存储技术韩国株式会社 Photodector unit, optical pickup and optical information storage medium system
US8773960B2 (en) 2012-02-07 2014-07-08 Toshiba Samsung Storage Technology Korea Corporation Photodetector unit, optical pickup including the photodetector unit, and optical system including the optical pickup

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