JP2004204253A - Target - Google Patents
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- Publication number
- JP2004204253A JP2004204253A JP2002371962A JP2002371962A JP2004204253A JP 2004204253 A JP2004204253 A JP 2004204253A JP 2002371962 A JP2002371962 A JP 2002371962A JP 2002371962 A JP2002371962 A JP 2002371962A JP 2004204253 A JP2004204253 A JP 2004204253A
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- Prior art keywords
- target
- bonding
- phase diffusion
- joining
- solid phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【0001】
【発明の属する技術分野】
スパッタリング法等で成膜を行う際に用いられるターゲットに関する。
【0002】
【従来技術】
スパッタリングによる成膜法は、半導体、磁気ディスク、液晶等の平面表示装置(フラットパネルディスプレイ、以下、FPDという)等の製品の製造に用いられており、一般的な成膜方法の1つである。
スパッタリングによる成膜法は大面積に均一な膜を成膜するのに有利なため、特にFPDの分野で多く利用されている。しかしながら、現在、FPD分野では画面の大型化に伴い、それに用いる基板サイズも大型化しているため、その基板にスパッタリング法により薄膜を形成するためのターゲットにも大型化が要求されている。
【0003】
大型のターゲットを製造する場合、製造に必要な生産設備が従来の物より大型となるため新たな設備投資を必要とする上、結果としてターゲットの製造コストおよび生産性が悪化する。そのため、大型のターゲットとして、複数のターゲット材をバッキングプレート上に接合した多分割ターゲットが用いることが提案されている(例えば、特許文献1、特許文献2参照)。
【0004】
【特許文献1】
特開2000−204468号
【特許文献】
特開2000−328241号
【0005】
【発明が解決しようとする課題】
上述した特許文献1および2では、分割ターゲットの構造上の問題から発生するパーティクルの発生を抑制するために、テーパ加工やターゲットのバッキングプレートへの配置を制御しているが、バッキングプレートとの熱膨張差等の影響によりターゲット材同士の隙間を皆無にすることは困難であり、パーティクルの発生を抑制するのに十分ではない。
【0006】
本発明の目的は、スパッタリング時のパーティクルの発生を抑制する、低コストなターゲットを提供することである。
【0007】
【問題を解決するための手段】
本発明者は、固相拡散接合によって、ターゲット材の端面同士を接合することにより、上述した問題が解決できることを見出し、本発明に到達した。
すなわち本発明は、ターゲット材の端面同士が固相拡散接合してなるターゲットである。
【0008】
【発明の実施の形態】
本発明において、固相拡散接合とは、外部からの高温の熱源により固体材料自体を溶かしつつ接合する、いわゆる溶接法ではなく、接合材料同士の接合界面で原子の拡散を促進して材料を接合するものである。
【0009】
固相拡散接合としては、例えば、熱間静水圧プレス(HIP)を利用する接合、摩擦圧着接合、摩擦攪拌接合(Friction Stir Welding)等の接合方法が利用できる。
【0010】
熱間静水圧プレス(HIP)を用いた固相拡散接合は、あらかじめHIPもしくは溶解法などで作製した2つ以上のターゲット材の接合端面同士を突き合わせた状態で、所定の加圧容器に充填しHIP処理を行うことにより、ターゲット材の接合界面で生じる固相拡散を利用して接合を行うものである。
【0011】
摩擦圧着接合とは、接合しようとする材料を相対的に運動させながら、かつ加圧させながら接合面を接触させ、その際に発生する摩擦熱により接合面において固相拡散反応を生じさせ接合するものである。
ターゲットの摩擦圧着接合においては、例えば、ターゲット材の一方を回転させる、もしくは往復運動させるなどして相対的に運動させながら加圧して接合する。
【0012】
この摩擦圧着接合の特徴でターゲット材の接合時に有益な点は、多くの種類の異種材料が容易かつ高強度に接合できるため、ほとんどのターゲット材の組み合わせで適応することが可能である点である。また、温度が上昇する時間が非常に短くかつ接触面付近が限定的に温度の影響を受けることである。すなわち、摩擦圧着接合では、ターゲットの温度が上昇する時間が非常に短く、かつ温度が上昇する部分が少ない。このため、ターゲット材の接合時に、ほとんどのミクロ組織が変化することなく接合することが可能となり、TiやCuなどの再結晶温度が500℃以下のターゲット材においても、微細粒の組織を変質させることなくターゲットの製造が可能となる。
【0013】
また、摩擦圧着接合は、数秒程度と非常に短い接合時間しか必要としないことや、バリなどが若干しか発生しないといった利点がある。すなわち、接合時間が短いので、HIPやホットプレスによる固相拡散結合と比較しても格段に生産性が高い。また、バリなどが少ないことは、接合後の加工時間の短縮につながり、このことも生産性を向上させる。さらに、バリが少なく、切削加工などが少ないということは、純度が高く非常に高価なターゲットの滅失量の低減や歩留の向上に寄与し、生産コストの低減が可能となる。
【0014】
摩擦攪拌接合による接合とは、接合材料の接合面に近接した部分に回転ピン等を運動させることにより、その摩擦熱で材料の接合面において固相拡散を発生させ接合させるものである。この接合方法は、接合材料の摩擦熱を利用した固相拡散接合である点で、摩擦圧着接合と同様の利点があり、さらに接合材料自身を直接摩擦させる必要がないため、設備的な制約が少ないという利点が有る。
【0015】
従来から、スパッタリング面の表面積が1m2を越えないターゲットについては、組織が均一な一体ターゲットを製造することは比較的に困難ではなかったが、それ以上の表面積を要求される均一組織のターゲットの製造は、製造設備等の制約から困難であった。よって本発明のターゲットは、スパッタリング面の表面積が1m2を越えるターゲットに好適である。
【0016】
【発明の効果】
本発明であれば、スパッタリング時にパーティクルの発生を抑制した低コストのターゲットを提供することができる。又、特に容易にスパッタリング面の表面積の大きい大型ターゲットを提供でき、産業上の価値は高い。[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a target used for forming a film by a sputtering method or the like.
[0002]
[Prior art]
A film forming method by sputtering is used for manufacturing products such as a flat display device (flat panel display, hereinafter, referred to as FPD) such as a semiconductor, a magnetic disk, and a liquid crystal, and is one of general film forming methods. .
Since a film formation method by sputtering is advantageous for forming a uniform film over a large area, it is widely used particularly in the field of FPD. However, at present, in the field of FPDs, as the size of the screen increases, the size of the substrate used for the screen also increases. Therefore, the size of a target for forming a thin film on the substrate by a sputtering method is also required.
[0003]
In the case of manufacturing a large-sized target, the production equipment required for the production is larger than the conventional one, so new capital investment is required, and as a result, the production cost and productivity of the target deteriorate. Therefore, it has been proposed to use a multi-segmented target in which a plurality of target materials are joined on a backing plate as a large-sized target (for example, see Patent Documents 1 and 2).
[0004]
[Patent Document 1]
Japanese Patent Application Laid-Open No. 2000-204468 [Patent Document]
JP 2000-328241 A
[Problems to be solved by the invention]
In Patent Documents 1 and 2 described above, taper processing and placement of the target on the backing plate are controlled in order to suppress generation of particles generated due to a structural problem of the split target. It is difficult to completely eliminate the gap between the target materials due to the influence of the expansion difference or the like, and it is not enough to suppress the generation of particles.
[0006]
An object of the present invention is to provide a low-cost target that suppresses generation of particles during sputtering.
[0007]
[Means to solve the problem]
The present inventor has found that the above-mentioned problem can be solved by joining the end faces of the target material by solid-phase diffusion bonding, and has reached the present invention.
That is, the present invention is a target formed by solid-phase diffusion bonding of end faces of a target material.
[0008]
BEST MODE FOR CARRYING OUT THE INVENTION
In the present invention, solid phase diffusion bonding is not a so-called welding method in which a solid material itself is melted and joined by a high-temperature heat source from the outside, but is a method of bonding atoms by promoting diffusion of atoms at a bonding interface between bonding materials. Is what you do.
[0009]
As the solid phase diffusion bonding, for example, bonding methods using hot isostatic pressing (HIP), friction bonding, friction stir welding (Friction Stir Welding), and the like can be used.
[0010]
Solid-phase diffusion bonding using a hot isostatic press (HIP) is a method in which two or more target materials prepared in advance by HIP or a melting method are filled in a predetermined pressurized container in a state where the bonding end faces thereof abut each other. By performing the HIP process, bonding is performed utilizing solid phase diffusion generated at the bonding interface of the target material.
[0011]
Friction bonding is a method in which the joining surfaces are brought into contact with each other while the materials to be joined are relatively moved and pressurized, and a solid phase diffusion reaction is caused on the joining surfaces by friction heat generated at that time to join. Things.
In the friction pressure bonding of the targets, for example, one of the target materials is rotated while being reciprocated or reciprocated to be relatively pressurized and joined.
[0012]
One of the advantages of this friction-bonding joining feature when joining target materials is that many types of dissimilar materials can be joined easily and with high strength, so that they can be used with most combinations of target materials. . Further, the time during which the temperature rises is very short, and the vicinity of the contact surface is limitedly affected by the temperature. That is, in the friction-bonding bonding, the time during which the temperature of the target rises is extremely short, and the temperature rise is less likely. Therefore, at the time of joining the target material, it is possible to join without changing most of the microstructure, and even in the target material having a recrystallization temperature of 500 ° C. or less such as Ti or Cu, the structure of the fine particles is deteriorated. It is possible to manufacture a target without any problem.
[0013]
Further, the friction pressure bonding has advantages that only a very short bonding time of about several seconds is required and that burrs are slightly generated. That is, since the bonding time is short, the productivity is remarkably high as compared with the solid phase diffusion bonding by HIP or hot pressing. In addition, the reduction in burrs and the like leads to a reduction in processing time after joining, which also improves productivity. Furthermore, the reduced number of burrs and the number of cutting processes contribute to a reduction in the amount of loss of highly expensive and extremely expensive targets and an improvement in yield, thereby enabling a reduction in production cost.
[0014]
Joining by friction stir welding is to move a rotating pin or the like to a portion close to the joining surface of the joining material, thereby generating solid phase diffusion on the joining surface of the material by the frictional heat and joining. This joining method has the same advantages as friction-bonding joining in that it is a solid-phase diffusion joining utilizing the frictional heat of the joining material.Furthermore, there is no need to directly rub the joining material itself. There is an advantage of being small.
[0015]
Conventionally, for a target having a sputtering surface area not exceeding 1 m 2 , it has been relatively difficult to produce an integrated target having a uniform structure, but a target having a uniform structure requiring a larger surface area is not difficult. Manufacture was difficult due to restrictions on manufacturing equipment and the like. Therefore, the target of the present invention is suitable for a target having a sputtering surface area of more than 1 m 2 .
[0016]
【The invention's effect】
According to the present invention, a low-cost target that suppresses generation of particles during sputtering can be provided. In addition, a large-sized target having a large surface area of the sputtering surface can be provided particularly easily, and has high industrial value.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2002371962A JP2004204253A (en) | 2002-12-24 | 2002-12-24 | Target |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002371962A JP2004204253A (en) | 2002-12-24 | 2002-12-24 | Target |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2004204253A true JP2004204253A (en) | 2004-07-22 |
Family
ID=32810698
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002371962A Pending JP2004204253A (en) | 2002-12-24 | 2002-12-24 | Target |
Country Status (1)
Country | Link |
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JP (1) | JP2004204253A (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005059198A1 (en) * | 2003-12-18 | 2005-06-30 | Mitsui Mining & Smelting Co.,Ltd. | Aluminum base target and process for producing the same |
US7652223B2 (en) | 2005-06-13 | 2010-01-26 | Applied Materials, Inc. | Electron beam welding of sputtering target tiles |
JP2010037578A (en) * | 2008-08-01 | 2010-02-18 | Hitachi Cable Ltd | Oxygen-free copper sputtering target, and manufacturing method of the same |
JP2010037579A (en) * | 2008-08-01 | 2010-02-18 | Hitachi Cable Ltd | Oxygen-free copper sputtering target, and manufacturing method of the same |
US7837929B2 (en) | 2005-10-20 | 2010-11-23 | H.C. Starck Inc. | Methods of making molybdenum titanium sputtering plates and targets |
WO2011158455A1 (en) * | 2010-06-16 | 2011-12-22 | 株式会社アルバック | Sputtering target and process for production thereof |
DE112010002097T5 (en) | 2009-05-28 | 2012-04-19 | Ulvac, Inc. | Sputtering target and method for processing a sputtering target |
US9017762B2 (en) | 2010-06-30 | 2015-04-28 | H.C. Starck, Inc. | Method of making molybdenum-containing targets comprising three metal elements |
US9150955B2 (en) | 2010-06-30 | 2015-10-06 | H.C. Starck Inc. | Method of making molybdenum containing targets comprising molybdenum, titanium, and tantalum or chromium |
US9334562B2 (en) | 2011-05-10 | 2016-05-10 | H.C. Starck Inc. | Multi-block sputtering target and associated methods and articles |
US9334565B2 (en) | 2012-05-09 | 2016-05-10 | H.C. Starck Inc. | Multi-block sputtering target with interface portions and associated methods and articles |
-
2002
- 2002-12-24 JP JP2002371962A patent/JP2004204253A/en active Pending
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005059198A1 (en) * | 2003-12-18 | 2005-06-30 | Mitsui Mining & Smelting Co.,Ltd. | Aluminum base target and process for producing the same |
US7652223B2 (en) | 2005-06-13 | 2010-01-26 | Applied Materials, Inc. | Electron beam welding of sputtering target tiles |
US8911528B2 (en) | 2005-10-20 | 2014-12-16 | H.C. Starck Inc. | Methods of making molybdenum titanium sputtering plates and targets |
US7837929B2 (en) | 2005-10-20 | 2010-11-23 | H.C. Starck Inc. | Methods of making molybdenum titanium sputtering plates and targets |
JP2010037578A (en) * | 2008-08-01 | 2010-02-18 | Hitachi Cable Ltd | Oxygen-free copper sputtering target, and manufacturing method of the same |
JP2010037579A (en) * | 2008-08-01 | 2010-02-18 | Hitachi Cable Ltd | Oxygen-free copper sputtering target, and manufacturing method of the same |
DE112010002097T5 (en) | 2009-05-28 | 2012-04-19 | Ulvac, Inc. | Sputtering target and method for processing a sputtering target |
JP5656995B2 (en) * | 2010-06-16 | 2015-01-21 | 株式会社アルバック | Sputtering target and manufacturing method thereof |
CN102933741A (en) * | 2010-06-16 | 2013-02-13 | 株式会社爱发科 | Sputtering target and process for production thereof |
WO2011158455A1 (en) * | 2010-06-16 | 2011-12-22 | 株式会社アルバック | Sputtering target and process for production thereof |
US9017762B2 (en) | 2010-06-30 | 2015-04-28 | H.C. Starck, Inc. | Method of making molybdenum-containing targets comprising three metal elements |
US9150955B2 (en) | 2010-06-30 | 2015-10-06 | H.C. Starck Inc. | Method of making molybdenum containing targets comprising molybdenum, titanium, and tantalum or chromium |
US9837253B2 (en) | 2010-06-30 | 2017-12-05 | H.C. Starck Inc. | Molybdenum containing targets for touch screen device |
US9945023B2 (en) | 2010-06-30 | 2018-04-17 | H.C. Starck, Inc. | Touch screen device comprising Mo-based film layer and methods thereof |
US9334562B2 (en) | 2011-05-10 | 2016-05-10 | H.C. Starck Inc. | Multi-block sputtering target and associated methods and articles |
US9922808B2 (en) | 2011-05-10 | 2018-03-20 | H.C. Starck Inc. | Multi-block sputtering target and associated methods and articles |
US9334565B2 (en) | 2012-05-09 | 2016-05-10 | H.C. Starck Inc. | Multi-block sputtering target with interface portions and associated methods and articles |
US10643827B2 (en) | 2012-05-09 | 2020-05-05 | H.C. Starck Inc. | Multi-block sputtering target with interface portions and associated methods and articles |
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