JP2004179249A5 - - Google Patents

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Publication number
JP2004179249A5
JP2004179249A5 JP2002341175A JP2002341175A JP2004179249A5 JP 2004179249 A5 JP2004179249 A5 JP 2004179249A5 JP 2002341175 A JP2002341175 A JP 2002341175A JP 2002341175 A JP2002341175 A JP 2002341175A JP 2004179249 A5 JP2004179249 A5 JP 2004179249A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2002341175A
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Japanese (ja)
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JP2004179249A (en
JP4415541B2 (en
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Publication date
Application filed filed Critical
Priority to JP2002341175A priority Critical patent/JP4415541B2/en
Priority claimed from JP2002341175A external-priority patent/JP4415541B2/en
Publication of JP2004179249A publication Critical patent/JP2004179249A/en
Publication of JP2004179249A5 publication Critical patent/JP2004179249A5/ja
Application granted granted Critical
Publication of JP4415541B2 publication Critical patent/JP4415541B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002341175A 2002-11-25 2002-11-25 Field effect transistor and manufacturing method thereof Expired - Fee Related JP4415541B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002341175A JP4415541B2 (en) 2002-11-25 2002-11-25 Field effect transistor and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002341175A JP4415541B2 (en) 2002-11-25 2002-11-25 Field effect transistor and manufacturing method thereof

Publications (3)

Publication Number Publication Date
JP2004179249A JP2004179249A (en) 2004-06-24
JP2004179249A5 true JP2004179249A5 (en) 2005-12-08
JP4415541B2 JP4415541B2 (en) 2010-02-17

Family

ID=32703623

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002341175A Expired - Fee Related JP4415541B2 (en) 2002-11-25 2002-11-25 Field effect transistor and manufacturing method thereof

Country Status (1)

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JP (1) JP4415541B2 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006041220A (en) * 2004-07-28 2006-02-09 Sony Corp Organic compound crystal and field effect type transistor
JP2006093668A (en) * 2004-08-23 2006-04-06 Semiconductor Energy Lab Co Ltd Purification method for organic semiconductor and semiconductor device
JPWO2006054686A1 (en) * 2004-11-18 2008-06-05 コニカミノルタホールディングス株式会社 Organic thin film transistor manufacturing method and organic thin film transistor
WO2006059486A1 (en) * 2004-12-02 2006-06-08 Konica Minolta Holdings, Inc. Organic thin-film transistor material, organic thin-film transistor, field effect transistor, switching device, organic semiconductor material, and organic semiconductor film
JPWO2006064776A1 (en) * 2004-12-17 2008-06-12 コニカミノルタホールディングス株式会社 Method for producing organic thin film transistor
JP2006190757A (en) * 2005-01-05 2006-07-20 Konica Minolta Holdings Inc Process for forming organic semiconductor layer and process for fabricating organic thin film transistor
US20080164465A1 (en) * 2005-02-18 2008-07-10 Koninklijke Philips Electronics, N.V. Electronic Device
EP1717862A3 (en) 2005-04-28 2012-10-10 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
JP4934995B2 (en) * 2005-06-03 2012-05-23 大日本印刷株式会社 Organic semiconductor material, organic semiconductor structure and organic semiconductor device
JP2007294718A (en) * 2006-04-26 2007-11-08 Konica Minolta Holdings Inc Organic semiconductor film and organic thin-film transistor
US7551471B2 (en) 2006-04-28 2009-06-23 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device
EP2073290A4 (en) 2006-10-12 2011-06-15 Idemitsu Kosan Co Organic thin film transistor device and organic thin film light-emitting transistor
WO2009125704A1 (en) * 2008-04-10 2009-10-15 出光興産株式会社 Compound for organic thin-film transistor and organic thin-film transistor using the compound
JPWO2012005310A1 (en) * 2010-07-08 2013-09-05 旭硝子株式会社 Fluorine-containing aromatic compounds, organic semiconductor materials, and organic thin film devices

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