JP2004134816A - Ceramics led package and ceramics led - Google Patents

Ceramics led package and ceramics led Download PDF

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Publication number
JP2004134816A
JP2004134816A JP2004017683A JP2004017683A JP2004134816A JP 2004134816 A JP2004134816 A JP 2004134816A JP 2004017683 A JP2004017683 A JP 2004017683A JP 2004017683 A JP2004017683 A JP 2004017683A JP 2004134816 A JP2004134816 A JP 2004134816A
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Prior art keywords
ceramic
led package
led
cavity
led chip
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Inventor
Kunihiro Izuno
泉野　訓宏
Seiji Fujie
藤江　誠二
Isato Takeuchi
竹内　勇人
Yasuo Kanbara
神原　康雄
Yoshifumi Nagai
永井　芳文
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Nichia Chemical Industries Ltd
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Nichia Chemical Industries Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48237—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a die pad of the item

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  • Led Device Packages (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a ceramics LED package to realize a high luminance LED display by having a light reflection layer on a cavity side surface. <P>SOLUTION: When forming a cavity 7 to mount an LED chip 3 on a ceramics green sheet where a conductor wiring is formed, the ceramics green sheet is press-molded so that the cavity becomes wider in the opening direction, and degreasing and calcination are carried out. By doing this, a ceramics LED package provided with a conductive body layer and a light reflection layer at the cavity is provided. <P>COPYRIGHT: (C)2004,JPO

Description

　本発明は、セラミックスＬＥＤパッケージに係り、特に、キャビティー側面に特定の光反射層を具備することにより高輝度のＬＥＤディスプレイを提供するセラミックスＬＥＤパッケージに関する。 The present invention relates to a ceramic LED package, and more particularly, to a ceramic LED package that provides a high-brightness LED display by providing a specific light reflection layer on a side surface of a cavity.

　看板、広告塔等の平面型ディスプレイにはＬＥＤが使用されている。ＬＥＤディスプレイには大別して、樹脂でモールドしたＬＥＤを平面上に並べたものと、ＬＥＤチップを基板上に載置して電極を接続し、その上から樹脂でモールドしたものとが知られている。その中でも後者のＬＥＤディスプレイは一画素を小さく構成でき、解像度の高い画面が実現できるので将来を嘱望されている。 ＬＥＤLEDs are used for flat displays such as signboards and advertising towers. LED displays are roughly classified into those in which LEDs molded with resin are arranged on a plane, and those in which an LED chip is mounted on a substrate, electrodes are connected, and resin is molded from above. . Among them, the latter LED display can be configured with one pixel small, and can realize a screen with high resolution, so that the future is expected.

　後者のＬＥＤディスプレイにおいて、一般にＬＥＤチップはセラミックス基板で構成されたセラミックスＬＥＤパッケージに載置される。セラミックス基板には表面に導電体層が形成された基板を積層した積層基板と、単一の絶縁性基板に導電体層が印刷された基板とがある。表面に導電体層が形成されたＬＥＤチップはこれらセラミックス基板上に載置され、ＬＥＤチップの正、負の電極がそれぞれ表面の導電体層に電気的に接続されている。 に お い て In the latter LED display, the LED chip is generally mounted on a ceramic LED package formed of a ceramic substrate. The ceramic substrate includes a laminated substrate in which a substrate having a conductor layer formed on the surface is laminated, and a substrate in which a conductor layer is printed on a single insulating substrate. The LED chip having the conductor layer formed on the surface is placed on these ceramic substrates, and the positive and negative electrodes of the LED chip are electrically connected to the conductor layer on the surface, respectively.

　図１に従来のセラミックスＬＥＤパッケージにＬＥＤチップを実装した状態の構造を表す模式断面図を示す。１はセラミックス基板、２はセラミックス基板の表面にパターン形成された導電体層である。導電体層２はＷ、Ａｇ等の金属が印刷され、その上からＬＥＤチップ３との接着性を高める目的でＡｕメッキが施されて形成されている。ＬＥＤチップ３は導電体層の上に接着剤等で接着され電極は金線等のワイヤーで電極につながれる。導電体層２はセラッミックス基板のビアホール或いはスルーホールを介して配線端子４と接続されている。ＬＥＤを載置すべきキャビティー７はアルミナ等基板と同じ材質の側面部５で包囲されており、これはＬＥＤからの発光を前方へ効率的に出光し、また、隣接する多色のＬＥＤの発光と混色しないようにしている。 FIG. 1 is a schematic cross-sectional view illustrating a structure in which an LED chip is mounted on a conventional ceramic LED package. Reference numeral 1 denotes a ceramic substrate, and 2 denotes a conductor layer having a pattern formed on the surface of the ceramic substrate. The conductor layer 2 is formed by printing a metal such as W or Ag, and then applying Au plating thereon for the purpose of enhancing the adhesiveness to the LED chip 3. The LED chip 3 is bonded on the conductor layer with an adhesive or the like, and the electrodes are connected to the electrodes by wires such as gold wires. The conductor layer 2 is connected to the wiring terminals 4 via via holes or through holes of the ceramics substrate. The cavity 7 in which the LED is to be mounted is surrounded by a side surface portion 5 made of the same material as the substrate such as alumina, which efficiently emits light emitted from the LED to the front, and also emits light from the adjacent multicolored LED. It does not mix with light emission.

　ところが、アルミナに代表されるセラミックスはある程度透光性を有し、前記したような光反射材として目的で使用するには不完全である。ＬＥＤからの発光がセラッミックスの光反射層に入光した場合、一部は透過光６となって、願わない方向に出光してしまう。この光は前方に有効に使用されず、また他のＬＥＤからの発光と混色してＬＥＤディスプレイの表示品位を低下させる問題となる。 However, ceramics typified by alumina have a certain degree of translucency, and are incomplete for use as a light reflecting material as described above. When the light emitted from the LED enters the light reflection layer of the ceramics, a part of the light becomes the transmitted light 6 and is emitted in an unwanted direction. This light is not effectively used in the forward direction, and is mixed with light emitted from other LEDs to cause a problem of deteriorating the display quality of the LED display.

　本発明者は上述した問題に対し、光反射層の反射効率を向上する構造について鋭意検討した結果、光反射層に金属を用い、しかも、開口方向にテーパーが付いている構造とすることにより理想的なＬＥＤパッケージが得られることを見いだし本発明を完成させるに至った。 The present inventor has intensively studied a structure for improving the reflection efficiency of the light reflection layer with respect to the above-described problem. As a result, it is ideal to use a metal for the light reflection layer and to have a structure tapered in the opening direction. The present inventors have found that a typical LED package can be obtained, and have completed the present invention.

　すなわち本発明のセラミックスＬＥＤパッケージは、セラミックス基板表面にてＬＥＤチップと結線され電力を供給する導電体層と、ＬＥＤチップを載置すべき部分を包囲する光反射層と、を有するキャビティーを備えるセラミックスＬＥＤパッケージにおいて、キャビティーは、開口方向に広くなるように側面部が傾斜されているセラミックからなることを特徴とする。 That is, the ceramic LED package of the present invention includes a cavity having a conductor layer that is connected to the LED chip on the surface of the ceramic substrate and supplies power, and a light reflection layer that surrounds a portion where the LED chip is to be mounted. In the ceramic LED package, the cavity is made of ceramic whose side surface is inclined so as to become wider in the opening direction.

　本発明のセラッミックスＬＥＤパッケージは次のような方法で好ましく製造することができる。すなわち、導体配線が形成されたセラミックスグリーンシートにＬＥＤチップを載置すべきキャビティーを形成するに際し、前記セラミックスグリーンシートをキャビティーが開口方向に広くなるようにプレス成形し、キャビティー側面部に導体印刷を形成し、脱脂、焼成をした後、キャビティー側面の導体層にＬＥＤと電気配線するワイヤーを接続できる貴金属の被覆を施し、光反射層を形成する。 The ceramics LED package of the present invention can be preferably manufactured by the following method. That is, when forming a cavity in which the LED chip is to be mounted on the ceramic green sheet on which the conductor wiring is formed, the ceramic green sheet is press-formed so that the cavity is widened in the opening direction, and is formed on the side surface of the cavity. After the conductor printing is formed, degreased and baked, a conductor layer on the side surface of the cavity is coated with a noble metal capable of connecting a wire for electric wiring with the LED, and a light reflecting layer is formed.

　本発明のセラミックスＬＥＤパッケージは、セラミックス基板表面にてＬＥＤチップと結線され電力を供給する導電体層と、ＬＥＤチップを載置すべき部分を包囲する光反射層と、を有するキャビティーを備えるセラミックスＬＥＤパッケージにおいて、キャビティーは、開口方向に広くなるように側面部が傾斜されているセラミックからなることを特徴とする。 A ceramic LED package according to the present invention includes a ceramic having a cavity having a conductor layer connected to an LED chip on the surface of a ceramic substrate to supply power, and a light reflection layer surrounding a portion where the LED chip is to be mounted. In the LED package, the cavity is made of ceramic whose side surface is inclined so as to widen in the opening direction.

　光反射層には金属であれば殆どのものが使用できるが、本発明において、光反射層は同時に導電体層である。それで、表面がＬＥＤとワイヤーで電気配線できる金属で被覆されていることが必要である。例えば、導電体層はタングステン（Ｗ）金属の導体配線表面をＡｇ、Ａｕのような貴金属、或いはＮｉで被覆されているものが用いられている。光反射層は基本的にこれら導電体層をそのままキャビティー側面に連続的に形成することにより形成する。すなわち、光反射層の材料はそのまま導電体層の表面材料を用いる構造となる。 殆 ど Although almost any metal can be used for the light reflecting layer, in the present invention, the light reflecting layer is a conductor layer at the same time. Therefore, it is necessary that the surface is covered with a metal that can be electrically wired with the LED and the wire. For example, a conductor layer is used in which the surface of a conductor wiring of tungsten (W) metal is coated with a noble metal such as Ag or Au, or Ni. The light reflection layer is basically formed by continuously forming these conductor layers as they are on the side surface of the cavity. That is, the light reflecting layer has a structure in which the surface material of the conductor layer is used as it is.

　配線材料がＡｇの場合は表面に貴金属の被覆する必要はなく、そのまま光反射層に使用できるが、導電材料としてはそのまま使用できるが、光反射層としてはその表面が粗いと乱反射が多くなり、反射効率が低下するため、表面処理を施すか、或いはさらに貴金属を被覆することが好ましい。 When the wiring material is Ag, it is not necessary to cover the surface with a noble metal, and it can be used as it is for the light reflection layer, but it can be used as it is as a conductive material, but as the light reflection layer, if the surface is rough, irregular reflection increases, Since the reflection efficiency is reduced, it is preferable to perform a surface treatment or further coat a noble metal.

　光反射層の材料として、特にＡｇは金属色が良好な白色を示し、反射光の光色に変化を与えない点でＡｕよりも優れている。 と し て As a material of the light reflecting layer, Ag is particularly superior to Au in that it shows a good white metallic color and does not change the light color of the reflected light.

　本発明のセラッミックスＬＥＤパッケージは次のような方法で好ましく製造することができる。すなわち、導体配線が形成されたセラミックスグリーンシートにＬＥＤチップを載置すべきキャビティーを形成するに際し、前記セラミックスグリーンシートをキャビティーが開口方向に広くなるようにプレス成形し、キャビティー側面部に導体印刷を形成し、脱脂、焼成をした後、キャビティー側面の導体層にＬＥＤと電気配線するワイヤーを接続できる貴金属の被覆を施し、光反射層を形成する。 The ceramics LED package of the present invention can be preferably manufactured by the following method. That is, when forming a cavity in which the LED chip is to be mounted on the ceramic green sheet on which the conductor wiring is formed, the ceramic green sheet is press-formed so that the cavity is widened in the opening direction, and is formed on the side surface of the cavity. After the conductor printing is formed, degreased and baked, a conductor layer on the side surface of the cavity is coated with a noble metal capable of connecting a wire for electric wiring with the LED, and a light reflecting layer is formed.

　プレス成形で形成されるキャビティーの側面部表面に形成される導体印刷は電気的に接続されている必要はない。それで、底面の導体印刷と独立して形成してもかまわないが、導電体層からの連続した構造とした方が作業はより簡単である。 導体 The conductor print formed on the side surface of the cavity formed by press molding does not need to be electrically connected. Therefore, although it may be formed independently of the conductor printing on the bottom surface, the work is easier if a continuous structure is formed from the conductor layer.

　導電体層に施す貴金属の被覆は、電気メッキ法、蒸着法等が適用できる。 貴 Electroplating, vapor deposition, etc. can be applied to the noble metal coating applied to the conductor layer.

　以上説明したように、本発明のセラミックスＬＥＤパッケージは、キャビティーの側面に金属の光反射層が形成されているので従来のアルミナ等のある程度透光性を持つセラミックスに比べ光の反射効率が良く、ＬＥＤからの横方向に出光した光を確実に前方へ向けることができ、ＬＥＤチップからの発光のうちＬＥＤディスプレイ等として利用できる比率を向上することができる。また、近傍の他色のＬＥＤからの発光と混色することが防止でき、ＬＥＤディスプレイの表示品位を改善することができる。 As described above, the ceramic LED package of the present invention has a better light reflection efficiency than a conventional ceramic having a certain degree of translucency such as alumina because the metal light reflection layer is formed on the side surface of the cavity. In addition, the light emitted from the LED in the lateral direction can be reliably directed forward, and the ratio of the light emitted from the LED chip that can be used as an LED display or the like can be improved. In addition, it is possible to prevent color mixture with light emitted from LEDs of other colors in the vicinity, thereby improving the display quality of the LED display.

　また、本発明の方法に従うと、ＬＥＤに電力を供給するキャビティー底面部の導電体層を形成すると同時にキャビティー側面部の光反射層を同時に形成でき、セラミックスＬＥＤパッケージをより簡単に製造することができる。 Further, according to the method of the present invention, it is possible to simultaneously form the conductor layer on the bottom surface of the cavity for supplying power to the LED and the light reflection layer on the side surface of the cavity, thereby making it easier to manufacture a ceramic LED package. Can be.

　＜作用＞
　本発明のセラミックスＬＥＤパッケージは、キャビティーの側面に金属の光反射層が形成されているので従来のアルミナ等のある程度透光性を持つセラミックスに比べ光の反射効率が良く、ＬＥＤからの横方向に出光した光を確実に前方へ向けることができ、ＬＥＤチップからの発光のうちＬＥＤディスプレイ等として利用できる比率を向上することができる。また、近傍の他色のＬＥＤからの発光と混色することが防止でき、ＬＥＤディスプレイの表示品位を改善することができる。 <Action>
The ceramic LED package of the present invention has a higher light reflection efficiency than a conventional ceramic having a certain degree of light transmission, such as alumina, because a metal light reflecting layer is formed on the side surface of the cavity. The emitted light can be reliably directed forward, and the ratio of the light emitted from the LED chip that can be used as an LED display or the like can be improved. In addition, it is possible to prevent color mixture with light emitted from LEDs of other colors in the vicinity, thereby improving the display quality of the LED display.

　特に、導電体層にＡｇを被覆すると、Ａｇは金属色が良好な白色を示し、反射光の光色に殆ど変化を与えず、ＬＥＤディスプレイ用のセラミックスＬＥＤパッケージとして最適である。 Especially, when the conductor layer is coated with Ag, Ag shows a good white metal color and hardly changes the light color of the reflected light, and is most suitable as a ceramic LED package for an LED display.

　光反射層は図２に示すように開口方向に広くなる構造となっているので、ＬＥＤからの横方向への発光を確実に前方方向に出光させることができる。 (2) Since the light reflection layer has a structure that widens in the opening direction as shown in FIG. 2, it is possible to reliably emit light emitted from the LED in the lateral direction in the forward direction.

　本発明のセラミックスＬＥＤパッケージを図面を参照しながら説明する。 セ ラ ミ ッ ク ス The ceramic LED package of the present invention will be described with reference to the drawings.

　＜実施例１＞
　図２に本実施例のセラミックスＬＥＤパッケージの断面図を示す。セラミックス基板１の表面には導電体層が形成されている。１はセラミックス基板、底面部の２はセラミックス基板の表面にパターン形成された導電体層である。導電体層２はタングステン（Ｗ）の金属が印刷され、表面にはＡｇが滑らかに被覆され、ＬＥＤチップ３との接着性を高めている。ＬＥＤチップ３は導電体層の上に接着剤で接着され電極は金線で電極につながれる。導電体層２はセラッミックス基板のスルーホールを介して配線部分４と接続されている。一方、ＬＥＤを載置すべきキャビティー７はアルミナ等基板と同じ材質の側面部５で包囲されており、側面部５の表面には導電体層と同じＷの表面にＡｇを被覆した光反射層８が形成され、また、キャビティー７は開口方向に広くなっている。 <Example 1>
FIG. 2 shows a cross-sectional view of the ceramic LED package of the present embodiment. A conductor layer is formed on the surface of the ceramic substrate 1. Reference numeral 1 denotes a ceramic substrate, and reference numeral 2 denotes a conductive layer formed on the surface of the ceramic substrate by patterning. The conductor layer 2 is printed with a metal of tungsten (W), and its surface is smoothly covered with Ag to enhance the adhesion to the LED chip 3. The LED chip 3 is bonded on the conductor layer with an adhesive, and the electrodes are connected to the electrodes with gold wires. The conductor layer 2 is connected to the wiring portion 4 via a through hole of the ceramics substrate. On the other hand, the cavity 7 in which the LED is to be mounted is surrounded by the side surface 5 made of the same material as the substrate such as alumina, and the surface of the side surface 5 has the same light reflection as that of the conductor layer coated with Ag on the W surface. The layer 8 is formed, and the cavity 7 is widened in the opening direction.

　本実施例のセラミックスＬＥＤパッケージは次のようにして作製した。 セ ラ ミ ッ ク ス The ceramic LED package of this example was manufactured as follows.

　アルミナを主成分としたグリーンシートを所定のサイズに切り出し、それにパンチングマシーンを使用して通常の方法で０．２５ｍｍφのスルーホールを形成した。次に、ＬＥＤを載置しない側から、スクリーン印刷法によりタングステン導体ペーストでスルーホールの穴埋め、および配線部分の印刷を行った。 グ リ ー ン A green sheet containing alumina as a main component was cut into a predetermined size, and a through hole of 0.25 mmφ was formed in the green sheet by a usual method using a punching machine. Next, from the side where the LED was not mounted, through holes were filled with a tungsten conductor paste by screen printing and the wiring portion was printed.

　次にグリーンシートのＬＥＤを載置する側に導体ペーストをスクリーン印刷法により導電体層を印刷する。この場合、導電体層の大きさは本来の導電体層として使用する底面部分の回りに光反射層を形成する部分を含めた広さにする。 (5) Next, a conductor layer is printed on the green sheet on the side on which the LEDs are to be mounted by a screen printing method. In this case, the size of the conductor layer is set to be wide including the portion where the light reflection layer is formed around the bottom portion used as the original conductor layer.

　導体印刷９が形成されたグリーンシート１０を図３に示すようにプレス機に装着してプレスする。プレスが終了すると図４に示すようなキャビティーの底面部１３および側面部５に導体印刷を形成されたグリーンシートが得られる。後に、得られたキャビティーの底面部１３の導体印刷は導体層、側面部５の導体印刷は光反射層となる。 (4) The green sheet 10 on which the conductor print 9 is formed is mounted on a press as shown in FIG. When the pressing is completed, a green sheet having conductor printing formed on the bottom surface 13 and the side surface 5 of the cavity as shown in FIG. 4 is obtained. Later, the conductor printed on the bottom portion 13 of the obtained cavity becomes a conductor layer, and the conductor printed on the side portion 5 becomes a light reflecting layer.

　後にＬＥＤパッケージを各キャビティーに割り分ける必要がある場合、割り取りを容易にするようにハーフカット加工を施す。 (5) If it is necessary to divide the LED package into each cavity later, perform half-cut processing to facilitate the division.

　以上のように加工されたグリーンシートは通常の方法に従い脱脂し、グリーンシート及び導体ペースト中の有機物を燃焼除去して導電体層を形成し、引き続き焼成工程でグリーンシートをセラミックス化する。 グ リ ー ン The green sheet processed as described above is degreased in accordance with a usual method, and the organic matter in the green sheet and the conductor paste is removed by burning to form a conductor layer, and then the green sheet is ceramicized in a firing step.

　最後に、このようにして得られたタングステン導体印刷が形成されたセラミックス配線基板を通常の導電体層に施すのと同じ電気メッキ法でＡｇを被覆した。 (4) Finally, the ceramic wiring board on which the tungsten conductor print thus obtained was formed was coated with Ag by the same electroplating method as applied to a normal conductor layer.

　図５は本実施例のセラミックスＬＥＤパッケージにＬＥＤを実装した状態を示す平面図であり、キャビティー内の破線は側面の光反射層と底面の導電体層との境界を示している。ＬＥＤを点灯させて評価したところ、本実施例は図１に示す光反射層に特徴のない従来のＬＥＤパッケージを使用したものに比べて発光出力の改善が見られた。 FIG. 5 is a plan view showing a state in which the LED is mounted on the ceramic LED package of the present embodiment, and a broken line in the cavity indicates a boundary between the light reflecting layer on the side surface and the conductor layer on the bottom surface. When the LED was turned on and evaluated, it was found that the light-emitting output of this example was improved as compared with the case of using the conventional LED package having no feature in the light reflection layer shown in FIG.

　＜実施例２＞
　ＬＥＤのディスプレイ等に使用する目的で、キャビティーの中に青色、緑色、及び赤色発光のＬＥＤチップを載置できる構造のＬＥＤパッケージがあるが、本発明はこのようなタイプのセラミックスＬＥＤパッケージにも適用可能である。図６に、光の三原色である青色（Ｂ）、緑色（Ｇ）、赤色（Ｒ）発光のＬＥＤを実装したセラミックスＬＥＤパッケージの平面図を示す。本実施例は各Ｂ、Ｇ、ＲのＬＥＤを点灯させるための導体印刷が施されたグリーンシートを実施例１と同じ方法により作製した。 <Example 2>
There is an LED package having a structure in which a blue, green, and red light emitting LED chip can be placed in a cavity for the purpose of use in an LED display or the like, but the present invention is also applicable to such a type of ceramic LED package. Applicable. FIG. 6 is a plan view of a ceramic LED package on which LEDs for emitting the three primary colors of light, blue (B), green (G), and red (R), are mounted. In the present embodiment, a green sheet on which conductor printing for lighting each of the B, G, and R LEDs was performed was produced in the same manner as in the first embodiment.

　このディスプレイは例えば一キャビティーがサファイア基板上にＧａＮ系の材料を積層して成る青色ＬＥＤチップＢと、緑色ＬＥＤチップＧと、ＧａＡｓ基板上にＧａＡｓ系の材料を積層して成る赤色ＬＥＤチップＲを実装してセラミックスＬＥＤパッケージを試験した。光反射層の内面でＬＥＤチップの発光を発光観測面側に反射させてＬＥＤディスプレイの輝度を向上させると共に、各ＬＥＤの発光はキャビティー内で発光色の混色が十分に行われる。 This display has, for example, a blue LED chip B, a green LED chip G, and a red LED chip R, each of which has a GaAs-based material laminated on a GaAs substrate, in which one cavity has a GaN-based material laminated on a sapphire substrate. Was mounted to test the ceramic LED package. The light emitted from the LED chip is reflected on the inner surface of the light reflection layer toward the light emission observation surface to improve the brightness of the LED display, and the light emitted from each LED is sufficiently mixed with the emitted light in the cavity.

　本発明のセラミックスＬＥＤパッケージは、ＬＥＤディスプレイ等に利用することができる。 セ ラ ミ ッ ク ス The ceramic LED package of the present invention can be used for LED displays and the like.

ＬＥＤを実装した従来のセラミックスＬＥＤパッケージの模式断面図。FIG. 2 is a schematic cross-sectional view of a conventional ceramic LED package on which an LED is mounted. ＬＥＤを実装した本発明のセラミックスＬＥＤパッケージの模式断面図。FIG. 1 is a schematic cross-sectional view of a ceramic LED package of the present invention on which an LED is mounted. 本発明の製造方法に適用するプレス工程を説明する模式断面図。FIG. 4 is a schematic cross-sectional view illustrating a pressing step applied to the manufacturing method of the present invention. プレス工程で作製されたグリーンシートの模式断面図。FIG. 2 is a schematic cross-sectional view of a green sheet produced in a pressing step. ＬＥＤを実装した本発明のセラミックスＬＥＤパッケージの模式平面図。FIG. 1 is a schematic plan view of a ceramic LED package of the present invention on which an LED is mounted. ＬＥＤを実装した本発明のセラミックスＬＥＤパッケージの模式平面図。FIG. 1 is a schematic plan view of a ceramic LED package of the present invention on which an LED is mounted.

符号の説明Explanation of reference numerals

　　　１・・・・・・セラミックス基板
　　　２・・・・・・導電体層
　　　３・・・・・・ＬＥＤチップ
　　　４・・・・・・配線部分
　　　５・・・・・・側面部
　　　６ａ・・・・・発光
　　　６ｂ・・・・・透過光
　　　６ｃ・・・・・反射光
　　　７・・・・・・キャビティー
　　　８・・・・・・光反射層
　　　９・・・・・・導体印刷
　　１０・・・・・・グリーンシート
　　１１・・・・・・上パンチ
　　１２・・・・・・下パンチ
　　１３・・・・・・底面部
DESCRIPTION OF SYMBOLS 1 ... Ceramic substrate 2 ... Conductor layer 3 ... LED chip 4 ... Wiring part 5 ... Side part 6a ... ··· Emission 6b ····· Transmitted light 6c ······ Reflected light 7 ····· Cavity 8 ········ Light reflecting layer 9 ····· Printing conductor ... Green sheet 11... Upper punch 12... Lower punch 13.

Claims (6)

絶縁性のセラミックス基板表面にてＬＥＤチップと結線され導体を介して電力を供給する導電体層と、前記ＬＥＤチップを包囲する光反射層と、を有するキャビティーを備えるセラミックスＬＥＤパッケージにおいて、
前記キャビティーは、開口方向に広くなるように側面部が傾斜されており、
前記側面部は、ＬＥＤチップからの横方向に出光した光を前方へ向ける角度を有していることを特徴とするセラミックスＬＥＤパッケージ。 A ceramic LED package including a cavity having a conductor layer connected to an LED chip on the surface of an insulating ceramic substrate and supplying power via a conductor, and a light reflection layer surrounding the LED chip,
The cavity has a side surface inclined so as to be wide in the opening direction,
The ceramic LED package according to claim 1, wherein the side surface has an angle at which light emitted laterally from the LED chip is directed forward. セラミックス基板表面にてＬＥＤチップと結線され電力を供給する導電体層と、前記ＬＥＤチップを包囲する光反射層と、を有するキャビティーを備えるセラミックスＬＥＤパッケージにおいて、
前記セラミックスＬＥＤパッケージはスルーホールを有し、
前記セラミックスＬＥＤパッケージの裏面側の配線端子と前記導電体層とは前記スルーホールを介して接続されており、
前記裏面側の配線端子は平坦であり、
前記キャビティーは、開口方向に広くなるように側面部が傾斜されていることを特徴とするセラミックスＬＥＤパッケージ。 In a ceramic LED package including a cavity having a conductor layer connected to an LED chip on the surface of a ceramic substrate and supplying power, and a light reflection layer surrounding the LED chip,
The ceramic LED package has a through hole,
The wiring terminal on the back side of the ceramic LED package and the conductor layer are connected via the through hole,
The wiring terminals on the back side are flat,
A ceramic LED package, wherein the cavity has a side surface inclined so as to become wider in an opening direction. セラミックス基板表面にてＬＥＤチップと結線され電力を供給する導電体層と、前記ＬＥＤチップを包囲する光反射層と、を有するキャビティーを備えるセラミックスＬＥＤパッケージにおいて、
前記セラミックスＬＥＤパッケージはスルーホールを有し、
前記セラミックスＬＥＤパッケージの裏面側の配線端子と前記導電体層とは前記スルーホールを介して接続されており、
前記スルーホールを介する導体と前記導電体層、前記光反射層とは同じ材質で形成されており、
前記キャビティーは、開口方向に広くなるように側面部が傾斜されていることを特徴とするセラミックスＬＥＤパッケージ。 In a ceramic LED package including a cavity having a conductor layer connected to an LED chip on the surface of a ceramic substrate and supplying power, and a light reflection layer surrounding the LED chip,
The ceramic LED package has a through hole,
The wiring terminal on the back side of the ceramic LED package and the conductor layer are connected via the through hole,
The conductor and the conductor layer through the through hole, the light reflection layer is formed of the same material,
A ceramic LED package, wherein the cavity has a side surface inclined so as to become wider in an opening direction. 絶縁性のセラミックス基板表面にてＬＥＤチップと結線されスルーホールを介して電力を供給する導電体層と、前記ＬＥＤチップを包囲する光反射層と、を有するキャビティーを備えるセラミックスＬＥＤパッケージにおいて、
前記キャビティーは、開口方向に広くなるように側面部が傾斜されており、
前記セラミックスＬＥＤパッケージの底面部及び側面部は、ほぼ同一の厚さを有していることを特徴とするセラミックスＬＥＤパッケージ。 A ceramic LED package including a cavity having a conductor layer connected to an LED chip on the surface of an insulating ceramic substrate and supplying power through a through hole, and a light reflection layer surrounding the LED chip,
The cavity has a side surface inclined so as to be wide in the opening direction,
A ceramic LED package, wherein a bottom surface and a side surface of the ceramic LED package have substantially the same thickness. セラミックス基板表面にてＬＥＤチップと結線され電力を供給する少なくとも２以上の導電体層を有するキャビティーを備えるセラミックスＬＥＤパッケージにおいて、
セラミックスＬＥＤパッケージは少なくとも２以上のスルーホールを有し、
セラミックスＬＥＤパッケージの裏面側の配線端子と導電体層とはスルーホールを介して接続されており、
ＬＥＤチップは一の導電体層に載置されており、ＬＥＤチップの一の電極は一の導電体層と電気的に接続されており、ＬＥＤチップの他の電極は他の導電体層と電気的に接続されており、
一の電極と電気的に接続されている配線端子は、他の電極と電気的に接続されている配線端子とほぼ同一平面上にあることを特徴とするセラミックスＬＥＤパッケージ。 In a ceramic LED package having a cavity having at least two or more conductor layers connected to an LED chip on the surface of a ceramic substrate and supplying power,
The ceramic LED package has at least two or more through holes,
The wiring terminals on the back side of the ceramic LED package and the conductor layer are connected via through holes,
The LED chip is mounted on one conductive layer, one electrode of the LED chip is electrically connected to one conductive layer, and the other electrode of the LED chip is electrically connected to the other conductive layer. Connected
A ceramic LED package, wherein a wiring terminal electrically connected to one electrode is substantially coplanar with a wiring terminal electrically connected to another electrode. ＬＥＤチップと、ＬＥＤチップを載置するキャビティーを備えるセラミックスＬＥＤパッケージと、を有するセラミックスＬＥＤにおいて、
前記セラミックスＬＥＤパッケージは、請求項１乃至５の何れかに記載のセラミックスＬＥＤパッケージであることを特徴とするセラミックスＬＥＤ。 In a ceramic LED having an LED chip and a ceramic LED package having a cavity for mounting the LED chip,
The ceramic LED according to claim 1, wherein the ceramic LED package is the ceramic LED package according to claim 1.
JP2004017683A 2004-01-26 2004-01-26 Ceramics led package and ceramics led Pending JP2004134816A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006181779A (en) * 2004-12-27 2006-07-13 Sumitomo Metal Electronics Devices Inc Manufacturing method of ceramic substrate
JP2007042745A (en) * 2005-08-01 2007-02-15 Ngk Spark Plug Co Ltd Ceramic package for light emitting element and manufacturing method thereof
JP2015026746A (en) * 2013-07-26 2015-02-05 新光電気工業株式会社 Light-emitting element mounting package and light-emitting element package

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006181779A (en) * 2004-12-27 2006-07-13 Sumitomo Metal Electronics Devices Inc Manufacturing method of ceramic substrate
JP2007042745A (en) * 2005-08-01 2007-02-15 Ngk Spark Plug Co Ltd Ceramic package for light emitting element and manufacturing method thereof
JP2015026746A (en) * 2013-07-26 2015-02-05 新光電気工業株式会社 Light-emitting element mounting package and light-emitting element package

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