JP2004119599A5 - - Google Patents

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JP2004119599A5
JP2004119599A5 JP2002279289A JP2002279289A JP2004119599A5 JP 2004119599 A5 JP2004119599 A5 JP 2004119599A5 JP 2002279289 A JP2002279289 A JP 2002279289A JP 2002279289 A JP2002279289 A JP 2002279289A JP 2004119599 A5 JP2004119599 A5 JP 2004119599A5
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Japan
Prior art keywords
insulating film
film
semiconductor device
thin film
base insulating
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JP2002279289A
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Japanese (ja)
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JP2004119599A (en
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Priority to JP2002279289A priority Critical patent/JP2004119599A/en
Priority claimed from JP2002279289A external-priority patent/JP2004119599A/en
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Publication of JP2004119599A5 publication Critical patent/JP2004119599A5/ja
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Claims (14)

基板の表面に下地絶縁膜を形成し、当該下地絶縁膜の表面側に薄膜半導体素子を形成する薄膜半導体装置の製造方法において、
前記下地絶縁膜を平坦化膜として形成した後、当該下地絶縁膜の表面側に前記薄膜半導体素子を形成することを特徴とする薄膜半導体装置の製造方法。In a method for manufacturing a thin film semiconductor device, a base insulating film is formed on a surface of a substrate, and a thin film semiconductor element is formed on a surface side of the base insulating film.
A method for manufacturing a thin film semiconductor device, comprising: forming the base insulating film as a planarizing film; and then forming the thin film semiconductor element on a surface side of the base insulating film. 請求項１において、前記平坦化膜を形成した後、さらに当該平坦化膜の表面に無機絶縁膜を形成し、当該無機絶縁膜の表面側に前記薄膜半導体素子を形成することを特徴とする薄膜半導体装置の製造方法。  2. The thin film according to claim 1, wherein after the planarizing film is formed, an inorganic insulating film is further formed on a surface of the planarizing film, and the thin film semiconductor element is formed on a surface side of the inorganic insulating film. A method for manufacturing a semiconductor device. 請求項１または２において、前記基板の表面をプラズマ処理した後に、前記下地絶縁膜を平坦化膜として形成することを特徴とする薄膜半導体装置の製造方法。  3. The method for manufacturing a thin film semiconductor device according to claim 1, wherein the base insulating film is formed as a planarizing film after the surface of the substrate is subjected to plasma treatment. 請求項１ないし３のいずれかにおいて、前記基板の表面に有機絶縁膜を塗布した後、当該有機絶縁膜を硬化させて前記下地絶縁膜を形成することを特徴とする薄膜半導体装置の製造方法。  4. The method of manufacturing a thin film semiconductor device according to claim 1, wherein an organic insulating film is applied to a surface of the substrate, and then the organic insulating film is cured to form the base insulating film. 請求項１ないし３のいずれかにおいて、前記基板の表面に無機材料の前駆体を塗布した後、当該前駆体を焼成して前記下地絶縁膜を形成することを特徴とする薄膜半導体装置の製造方法。  4. The method of manufacturing a thin film semiconductor device according to claim 1, wherein a precursor of an inorganic material is applied to the surface of the substrate, and then the precursor is baked to form the base insulating film. . 請求項１ないし３のいずれかにおいて、前記基板の表面に無機絶縁膜を形成した後、該無機絶縁膜の表面に塗膜を形成し、しかる後に、前記塗膜および前記無機絶縁膜を等しい速度でエッチング可能な条件で、前記塗膜および前記無機絶縁膜の表面をエッチングすることにより前記下地絶縁膜を形成することを特徴とする薄膜半導体装置の製造方法。  4. The method according to claim 1, wherein after the inorganic insulating film is formed on the surface of the substrate, a coating film is formed on the surface of the inorganic insulating film, and thereafter, the coating film and the inorganic insulating film are moved at an equal speed. A method of manufacturing a thin film semiconductor device, wherein the base insulating film is formed by etching the surface of the coating film and the inorganic insulating film under conditions that allow etching. 基板の表面に下地絶縁膜を形成し、当該下地絶縁膜の表面側に薄膜半導体素子が形成された薄膜半導体装置において、
前記下地絶縁膜は、平坦化膜として形成されていることを特徴とする薄膜半導体装置。In a thin film semiconductor device in which a base insulating film is formed on the surface of a substrate and a thin film semiconductor element is formed on the surface side of the base insulating film,
2. The thin film semiconductor device according to claim 1, wherein the base insulating film is formed as a planarizing film. 請求項７において、前記平坦化膜の表面に無機絶縁膜が形成され、当該無機絶縁膜の表面側に前記薄膜半導体素子が形成されていることを特徴とする薄膜半導体装置。  8. The thin film semiconductor device according to claim 7, wherein an inorganic insulating film is formed on a surface of the planarizing film, and the thin film semiconductor element is formed on a surface side of the inorganic insulating film. 請求項７または８において、前記下地絶縁膜は有機絶縁膜からなることを特徴とする薄膜半導体装置。  9. The thin film semiconductor device according to claim 7, wherein the base insulating film is made of an organic insulating film. 請求項７または８において、前記下地絶縁膜は無機材料の前駆体を焼成した絶縁膜からなることを特徴とする薄膜半導体装置。  9. The thin film semiconductor device according to claim 7, wherein the base insulating film is made of an insulating film obtained by baking a precursor of an inorganic material. 請求項７ないし１０のいずれか一項に規定する薄膜半導体装置を有し、少なくとも電気光学物質を制御するために前記薄膜半導体素子が用いられたことを特徴とする電気光学装置。  11. An electro-optical device comprising the thin-film semiconductor device as defined in claim 7, wherein the thin-film semiconductor element is used to control at least an electro-optical material. 請求項１１において、前記電気光学物質は、液晶であることを特徴とする電気光学装置。  12. The electro-optical device according to claim 11, wherein the electro-optical material is a liquid crystal. 請求項１１において、前記電気光学物質は、エレクトロルミネッセンス材料であることを特徴とする電気光学装置。  12. The electro-optical device according to claim 11, wherein the electro-optical material is an electroluminescent material. 請求項１１ないし１３のいずれか一項に規定する電気光学装置を用いたことを特徴とする電子機器。  An electronic apparatus using the electro-optical device defined in any one of claims 11 to 13.
JP2002279289A 2002-09-25 2002-09-25 Method for manufacturing thin film semiconductor device, thin film semiconductor device electro-optical device, and electronic apparatus Withdrawn JP2004119599A (en)

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JP2002279289A JP2004119599A (en) 2002-09-25 2002-09-25 Method for manufacturing thin film semiconductor device, thin film semiconductor device electro-optical device, and electronic apparatus

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JP2002279289A JP2004119599A (en) 2002-09-25 2002-09-25 Method for manufacturing thin film semiconductor device, thin film semiconductor device electro-optical device, and electronic apparatus

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JP2004119599A JP2004119599A (en) 2004-04-15
JP2004119599A5 true JP2004119599A5 (en) 2005-10-13

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007019014A (en) * 2005-07-06 2007-01-25 Samsung Sdi Co Ltd Flat panel display device and its manufacturing method
JP2007141945A (en) * 2005-11-15 2007-06-07 Hitachi Displays Ltd Display device and manufacturing method thereof
EP2924498A1 (en) 2006-04-06 2015-09-30 Semiconductor Energy Laboratory Co, Ltd. Liquid crystal desplay device, semiconductor device, and electronic appliance
JP2013125136A (en) * 2011-12-14 2013-06-24 Sony Corp Driving substrate, display device, planarizing method, and method of manufacturing driving substrate
KR102517446B1 (en) * 2015-12-02 2023-04-04 엘지디스플레이 주식회사 Display Device And Method For manufacturing Of The Same
CN110085635A (en) * 2019-04-08 2019-08-02 深圳市华星光电半导体显示技术有限公司 A kind of display panel and preparation method thereof

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