JP2003536273A5 - - Google Patents

Download PDF

Info

Publication number
JP2003536273A5
JP2003536273A5 JP2002503924A JP2002503924A JP2003536273A5 JP 2003536273 A5 JP2003536273 A5 JP 2003536273A5 JP 2002503924 A JP2002503924 A JP 2002503924A JP 2002503924 A JP2002503924 A JP 2002503924A JP 2003536273 A5 JP2003536273 A5 JP 2003536273A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002503924A
Other versions
JP2003536273A (ja
Filing date
Publication date
Priority claimed from US09/599,260 external-priority patent/US6689211B1/en
Application filed filed Critical
Priority claimed from PCT/US2001/019613 external-priority patent/WO2001099169A2/en
Publication of JP2003536273A publication Critical patent/JP2003536273A/ja
Publication of JP2003536273A5 publication Critical patent/JP2003536273A5/ja
Withdrawn legal-status Critical Current

Links

JP2002503924A 2000-06-22 2001-06-20 エッチング阻止層システム Withdrawn JP2003536273A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/599,260 2000-06-22
US09/599,260 US6689211B1 (en) 1999-04-09 2000-06-22 Etch stop layer system
PCT/US2001/019613 WO2001099169A2 (en) 2000-06-22 2001-06-20 Etch stop layer system for sige devices

Publications (2)

Publication Number Publication Date
JP2003536273A JP2003536273A (ja) 2003-12-02
JP2003536273A5 true JP2003536273A5 (ja) 2008-08-14

Family

ID=24398918

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002503924A Withdrawn JP2003536273A (ja) 2000-06-22 2001-06-20 エッチング阻止層システム

Country Status (4)

Country Link
EP (1) EP1295319A2 (ja)
JP (1) JP2003536273A (ja)
AU (1) AU2001268577A1 (ja)
WO (1) WO2001099169A2 (ja)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6602613B1 (en) 2000-01-20 2003-08-05 Amberwave Systems Corporation Heterointegration of materials using deposition and bonding
US6750130B1 (en) 2000-01-20 2004-06-15 Amberwave Systems Corporation Heterointegration of materials using deposition and bonding
US6555839B2 (en) 2000-05-26 2003-04-29 Amberwave Systems Corporation Buried channel strained silicon FET using a supply layer created through ion implantation
DE60125952T2 (de) 2000-08-16 2007-08-02 Massachusetts Institute Of Technology, Cambridge Verfahren für die herstellung eines halbleiterartikels mittels graduellem epitaktischen wachsen
US6900103B2 (en) 2001-03-02 2005-05-31 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6593641B1 (en) 2001-03-02 2003-07-15 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6830976B2 (en) 2001-03-02 2004-12-14 Amberwave Systems Corproation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6724008B2 (en) 2001-03-02 2004-04-20 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
WO2002071495A1 (en) * 2001-03-02 2002-09-12 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed cmos electronics and high speed analog circuits
WO2002082514A1 (en) * 2001-04-04 2002-10-17 Massachusetts Institute Of Technology A method for semiconductor device fabrication
US6855649B2 (en) * 2001-06-12 2005-02-15 International Business Machines Corporation Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing
AU2002322105A1 (en) 2001-06-14 2003-01-02 Amberware Systems Corporation Method of selective removal of sige alloys
WO2003001671A2 (en) 2001-06-21 2003-01-03 Amberwave Systems Corporation Improved enhancement of p-type metal-oxide-semiconductor field-effect transistors
EP1415331A2 (en) 2001-08-06 2004-05-06 Massachusetts Institute Of Technology Formation of planar strained layers
US6974735B2 (en) 2001-08-09 2005-12-13 Amberwave Systems Corporation Dual layer Semiconductor Devices
US7138649B2 (en) 2001-08-09 2006-11-21 Amberwave Systems Corporation Dual-channel CMOS transistors with differentially strained channels
WO2003028106A2 (en) 2001-09-24 2003-04-03 Amberwave Systems Corporation Rf circuits including transistors having strained material layers
US6649492B2 (en) * 2002-02-11 2003-11-18 International Business Machines Corporation Strained Si based layer made by UHV-CVD, and devices therein
US7060632B2 (en) * 2002-03-14 2006-06-13 Amberwave Systems Corporation Methods for fabricating strained layers on semiconductor substrates
WO2003105204A2 (en) 2002-06-07 2003-12-18 Amberwave Systems Corporation Semiconductor devices having strained dual channel layers
US20030227057A1 (en) 2002-06-07 2003-12-11 Lochtefeld Anthony J. Strained-semiconductor-on-insulator device structures
US6982474B2 (en) 2002-06-25 2006-01-03 Amberwave Systems Corporation Reacted conductive gate electrodes
FR2842349B1 (fr) 2002-07-09 2005-02-18 Transfert d'une couche mince a partir d'une plaquette comprenant une couche tampon
US6953736B2 (en) 2002-07-09 2005-10-11 S.O.I.Tec Silicon On Insulator Technologies S.A. Process for transferring a layer of strained semiconductor material
FR2842350B1 (fr) * 2002-07-09 2005-05-13 Procede de transfert d'une couche de materiau semiconducteur contraint
US7018910B2 (en) 2002-07-09 2006-03-28 S.O.I.Tec Silicon On Insulator Technologies S.A. Transfer of a thin layer from a wafer comprising a buffer layer
US7781850B2 (en) * 2002-09-20 2010-08-24 Qualcomm Mems Technologies, Inc. Controlling electromechanical behavior of structures within a microelectromechanical systems device
DE10260860B4 (de) * 2002-12-23 2008-07-10 Robert Bosch Gmbh Schicht aus Si1-xGex, Verfahren zu deren Herstellung und mikromechanisches Bauelement damit
US6808953B2 (en) * 2002-12-31 2004-10-26 Robert Bosch Gmbh Gap tuning for surface micromachined structures in an epitaxial reactor
US7176041B2 (en) * 2003-07-01 2007-02-13 Samsung Electronics Co., Ltd. PAA-based etchant, methods of using same, and resultant structures
US7495266B2 (en) 2004-06-16 2009-02-24 Massachusetts Institute Of Technology Strained silicon-on-silicon by wafer bonding and layer transfer
TWI283442B (en) * 2004-09-09 2007-07-01 Sez Ag Method for selective etching
FR2892733B1 (fr) 2005-10-28 2008-02-01 Soitec Silicon On Insulator Relaxation de couches
WO2007053686A2 (en) 2005-11-01 2007-05-10 Massachusetts Institute Of Technology Monolithically integrated semiconductor materials and devices
US8063397B2 (en) 2006-06-28 2011-11-22 Massachusetts Institute Of Technology Semiconductor light-emitting structure and graded-composition substrate providing yellow-green light emission
DE102010042570B4 (de) 2010-10-18 2012-07-26 Jörg Funke Falt- und teilweise zerlegbares Fahrrad
US9093478B1 (en) 2014-04-11 2015-07-28 International Business Machines Corporation Integrated circuit structure with bulk silicon FinFET and methods of forming
US9842913B1 (en) 2016-05-18 2017-12-12 Globalfoundries Inc. Integrated circuit fabrication with boron etch-stop layer
FR3064398B1 (fr) * 2017-03-21 2019-06-07 Soitec Structure de type semi-conducteur sur isolant, notamment pour un capteur d'image de type face avant, et procede de fabrication d'une telle structure
FR3125631A1 (fr) * 2021-07-23 2023-01-27 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d’un substrat semi-conducteur sur isolant de type soi ou sigeoi par besoi et structure pour fabriquer un tel substrat

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5013681A (en) * 1989-09-29 1991-05-07 The United States Of America As Represented By The Secretary Of The Navy Method of producing a thin silicon-on-insulator layer
TW335558B (en) * 1996-09-03 1998-07-01 Ibm High temperature superconductivity in strained SiSiGe
US5906951A (en) * 1997-04-30 1999-05-25 International Business Machines Corporation Strained Si/SiGe layers on insulator
WO1999053539A1 (en) * 1998-04-10 1999-10-21 Massachusetts Institute Of Technology Silicon-germanium etch stop layer system

Similar Documents

Publication Publication Date Title
BE2022C531I2 (ja)
BE2022C502I2 (ja)
BE2022C547I2 (ja)
BE2017C057I2 (ja)
BE2017C051I2 (ja)
BE2017C032I2 (ja)
BE2016C051I2 (ja)
BE2015C046I2 (ja)
BE2014C052I2 (ja)
BE2014C036I2 (ja)
BE2014C026I2 (ja)
BE2014C004I2 (ja)
BE2014C006I2 (ja)
BE2017C050I2 (ja)
BE2011C034I2 (ja)
BE2007C047I2 (ja)
AU2002307149A8 (ja)
BRPI0209186B1 (ja)
JP2002032003A5 (ja)
BE2014C008I2 (ja)
BRPI0204884B1 (ja)
CH1379220H1 (ja)
BE2016C021I2 (ja)
BE2017C059I2 (ja)
JP2002021582A5 (ja)