JP2003322831A - Semiconductor mach-zehnder optical modulator - Google Patents
Semiconductor mach-zehnder optical modulatorInfo
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- JP2003322831A JP2003322831A JP2002131109A JP2002131109A JP2003322831A JP 2003322831 A JP2003322831 A JP 2003322831A JP 2002131109 A JP2002131109 A JP 2002131109A JP 2002131109 A JP2002131109 A JP 2002131109A JP 2003322831 A JP2003322831 A JP 2003322831A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
- G02F1/2257—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure the optical waveguides being made of semiconducting material
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、長距離大容量光通
信システム等に有用な半導体マッハツェンダ型光変調器
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor Mach-Zehnder type optical modulator useful for a long-distance, large-capacity optical communication system or the like.
【０００２】[0002]
【従来の技術】半導体光変調器は、素子の小型化や、半
導体レーザと同一半導体基板上への形成が可能であると
いう利点を持ち、ローコスト化が期待できるため、短距
離から中長距離までをカバーする電気−光変換素子とし
て研究が行われている。特に、半導体マッハツェンダ型
光変調器は、素子の波長チャープパラメータを変化させ
ることができるため、システム応用上で有用である。2. Description of the Related Art Semiconductor optical modulators have the advantage that they can be miniaturized and can be formed on the same semiconductor substrate as the semiconductor laser. Has been studied as an electro-optical conversion element that covers the. In particular, the semiconductor Mach-Zehnder interferometer type optical modulator is useful in system applications because it can change the wavelength chirp parameter of the device.
【０００３】半導体マッハツェンダ型光変調器を構成す
る場合、大まかに２通りの方法が考えられる。第１は、
図２２に示す集中定数型電極を用いる方法であり、第２
は、図２３に示す進行波型電極を用いる方法である。When constructing a semiconductor Mach-Zehnder type optical modulator, roughly two methods can be considered. The first is
It is a method using the lumped-constant type electrode shown in FIG.
Is a method using the traveling wave electrode shown in FIG.
【０００４】図２２中、７０は半導体基板、７１は入力
導波路、７２は分波器、７３、７４は光導波路、７５は
集中定数型電極を有する位相変調器、７６は高周波信号
源、７７は合波器、７８は出力導波路である。In FIG. 22, 70 is a semiconductor substrate, 71 is an input waveguide, 72 is a demultiplexer, 73 and 74 are optical waveguides, 75 is a phase modulator having a lumped constant type electrode, 76 is a high frequency signal source, and 77. Is a multiplexer and 78 is an output waveguide.
【０００５】図２３中、８０は半導体基板、８１は入力
導波路、８２は分波器、８３、８４は光導波路、８５は
進行波型電極を有する位相変調器、８６は高周波信号
源、８７、８８は終端抵抗、８９は合波器、９０は出力
導波路である。In FIG. 23, 80 is a semiconductor substrate, 81 is an input waveguide, 82 is a demultiplexer, 83 and 84 are optical waveguides, 85 is a phase modulator having traveling wave type electrodes, 86 is a high frequency signal source, and 87. , 88 is a terminating resistor, 89 is a multiplexer, and 90 is an output waveguide.
【０００６】集中定数型電極を用いる方法は、集中定数
型電極の容量および集中定数型電極に高周波信号を印加
するためのリード線のインダクタンスが素子の動作速度
を制限することになるため、極めて小型の素子でしか、
半導体マッハツェンダ型光変調器を実現することができ
ない。他方、半導体マッハツェンダ型光変調器は素子長
と駆動電圧が反比例するため、極めて短い素子長では、
極めて高い駆動電圧が必要となり、低駆動電圧で動作さ
せることができない。The method using a lumped constant electrode is extremely small because the capacitance of the lumped constant electrode and the inductance of the lead wire for applying a high frequency signal to the lumped constant electrode limit the operating speed of the element. Only the element of
A semiconductor Mach-Zehnder type optical modulator cannot be realized. On the other hand, in the semiconductor Mach-Zehnder type optical modulator, the element length and the drive voltage are inversely proportional, so with an extremely short element length,
It requires an extremely high drive voltage and cannot be operated at a low drive voltage.
【０００７】駆動電圧を下げる方法として、電界を印加
する領域である光導波路を薄くする方法がある。しか
し、光導波路中の光場の広がり以下に薄くすると、逆
に、変調効率が下がり、駆動電圧は上がることになるた
め、この方法のみでは高速かつ低駆動電圧で動作する半
導体マッハツェンダ型光変調器を実現することは困難で
ある。As a method of lowering the driving voltage, there is a method of thinning an optical waveguide which is a region to which an electric field is applied. However, if the thickness is made smaller than the spread of the optical field in the optical waveguide, on the contrary, the modulation efficiency decreases and the driving voltage rises. Therefore, this method alone is a semiconductor Mach-Zehnder type optical modulator that operates at high speed and low driving voltage. Is difficult to achieve.
【０００８】これに対して、進行波型電極を用いる方法
によれば、進行波型電極の特性インピーダンスを５０Ω
に整合させることができれば、変調帯域の制限はなくな
る。しかし、電界を印加する光導波路の厚さが進行波型
電極の特性インピーダンスと関わり、光導波路が厚けれ
ば、特性インピーダンスを５０Ωに整合させることが可
能であるが、このようにすると、素子の駆動電圧が高く
なり、逆に、光導波路が薄いと特性インピーダンスが小
さくなり、素子の高周波特性は著しく劣化してしまうこ
とになる。したがって、進行波型電極を用いる方法で
も、駆動電圧と素子長が反比例の関係になってしまう。
また、光の位相速度と変調波の位相速度を整合させるこ
とも進行波型電極を用いる素子では大きな問題である。On the other hand, according to the method using the traveling wave type electrode, the characteristic impedance of the traveling wave type electrode is 50Ω.
If it can be matched with, the limitation of the modulation band is removed. However, the thickness of the optical waveguide to which the electric field is applied is related to the characteristic impedance of the traveling-wave electrode, and if the optical waveguide is thick, it is possible to match the characteristic impedance to 50Ω. When the driving voltage becomes high, and conversely, when the optical waveguide is thin, the characteristic impedance becomes small, and the high frequency characteristics of the element deteriorate significantly. Therefore, even in the method using the traveling wave type electrode, the drive voltage and the element length are in an inversely proportional relationship.
Matching the phase velocity of light and the phase velocity of a modulated wave is also a big problem in an element using a traveling wave type electrode.
【０００９】そこで、従来、半導体マッハツェンダ型光
変調器として、例えば、図２４に示すような半導体マッ
ハツェンダ型光変調器がR.G.Walker等により提案されて
いる（IEEE Journal of Quantum Electronics, vol.27,
p.645, 1991）。図２４Ａは全体の概略的上面図、図２
４Ｂは位相変調器部分の概略的断面図である。Therefore, conventionally, as a semiconductor Mach-Zehnder type optical modulator, for example, a semiconductor Mach-Zehnder type optical modulator as shown in FIG. 24 has been proposed by RG Walker (IEEE Journal of Quantum Electronics, vol.
p.645, 1991). FIG. 24A is an overall schematic top view, FIG.
4B is a schematic sectional view of a phase modulator portion.
【００１０】この半導体マッハツェンダ型光変調器は、
光導波路と高周波（マイクロ波）導波路を空間的に分離
し、進行波型電極と集中定数型電極とを組み合わせた構
造をしている。すなわち、進行波型電極５０、５１が位
相変調器５２、５３と独立に存在し、位相変調器５２、
５３の光導波路５４、５５の上方には、進行波型電極５
０、５１から櫛上に配線された複数の分布電極５６、５
７が配置されている。これら分布電極５６、５７は、そ
れぞれ集中定数型電極として機能するが、十分に小さい
ため、十分に高周波まで帯域の制限を受けずに動作す
る。This semiconductor Mach-Zehnder type optical modulator is
The optical waveguide and the high frequency (microwave) waveguide are spatially separated from each other, and the structure is such that a traveling wave type electrode and a lumped constant type electrode are combined. That is, the traveling wave electrodes 50 and 51 exist independently of the phase modulators 52 and 53, and
The traveling wave type electrode 5 is provided above the optical waveguides 54 and 55 of 53.
A plurality of distributed electrodes 56, 5 wired on the comb from 0, 51
7 are arranged. These distributed electrodes 56 and 57 each function as a lumped constant type electrode, but since they are sufficiently small, they operate sufficiently without being limited to a high frequency band.
【００１１】また、分布電極５６、５７は、進行波型電
極５０、５１から見て、分布定数型の容量およびインダ
クタンスに見えるため、これらを含めた進行波型電極と
して設計することで、特性インピーダンスを５０Ωに整
合させ、光の位相速度と高周波信号（変調波）の位相速
度を整合させることも可能である。Since the distributed electrodes 56 and 57 look like distributed constant type capacitances and inductances when viewed from the traveling wave type electrodes 50 and 51, the characteristic impedance can be obtained by designing them as traveling wave type electrodes. Can be matched with 50Ω to match the phase velocity of light with the phase velocity of a high frequency signal (modulated wave).
【００１２】また、光導波路５４、５５の下方には導電
層５８が存在しており、この導電層５８を介して光導波
路５４、５５が等質な容量として働くので、高周波信号
を分布電極５６、５７に印加した際に、光導波路５４、
５５に逆方向の高周波電界が生じ、素子をプッシュプル
駆動することができる。また、導電層５８を光導波路５
４、５５の下部に有しているので、高周波電界を比較的
効率良くｉ型半導体層（コア層）に印加することができ
る。Further, a conductive layer 58 exists below the optical waveguides 54 and 55. Since the optical waveguides 54 and 55 act as a uniform capacitance via the conductive layer 58, the high frequency signal is distributed to the distribution electrode 56. , 57, the optical waveguide 54,
A reverse high-frequency electric field is generated in 55, and the element can be push-pull driven. In addition, the conductive layer 58 is connected to the optical waveguide 5.
Since it is provided under the layers 4 and 55, a high frequency electric field can be applied to the i-type semiconductor layer (core layer) relatively efficiently.
【００１３】更に、従来、半導体マッハツェンダ型光変
調器として、例えば、図２５に示すような半導体マッハ
ツェンダ型光変調器がR.Spickermann等により提案され
ている（Electronics Letters, vol.32, p.1095, 199
6）。図２５Ａは全体の概略的上面図、図２５Ｂは図２
５Ａの二点鎖線Ｘ１で囲む部分の概略的拡大図、図２５
Ｃは図２５ＢのＸ２−Ｘ２線に沿った概略的断面図であ
る。Further, conventionally, as a semiconductor Mach-Zehnder type optical modulator, for example, a semiconductor Mach-Zehnder type optical modulator as shown in FIG. 25 has been proposed by R. Spickermann and others (Electronics Letters, vol.32, p.1095). , 199
6). FIG. 25A is a schematic top view of the whole, and FIG. 25B is FIG.
FIG. 25 is a schematic enlarged view of a portion surrounded by a chain double-dashed line X1 of 5A.
25C is a schematic cross-sectional view taken along the line X2-X2 of FIG. 25B.
【００１４】この半導体マッハツェンダ型光変調器は、
図２４に示す半導体マッハツェンダ型光変調器と同様
に、光導波路と高周波導波路を空間的に分離し、進行波
型電極と集中定数型電極を組み合わせた構造をしてい
る。図２５中、６０は半導体基板、６１、６２は光導波
路、６３は信号電極、６４、６５は接地電極、６６、６
７、６８、６９は分布電極である。This semiconductor Mach-Zehnder type optical modulator is
Similar to the semiconductor Mach-Zehnder type optical modulator shown in FIG. 24, the optical waveguide and the high frequency waveguide are spatially separated from each other, and the traveling wave type electrode and the lumped constant type electrode are combined. In FIG. 25, 60 is a semiconductor substrate, 61 and 62 are optical waveguides, 63 is a signal electrode, 64 and 65 are ground electrodes, 66 and 6
Reference numerals 7, 68 and 69 are distributed electrodes.
【００１５】この半導体マッハツェンダ型光変調器は、
信号電極６３の両側に接地電極６４、６５を配置すると
いうコプレーナ型の高周波導波路を使用しているので、
放射損を減らすことができるだけでなく、光導波路６
１、６２に並列に高周波電界を印加する構成としている
ため、駆動電圧を下げることができる。This semiconductor Mach-Zehnder type optical modulator is
Since the coplanar type high frequency waveguide in which the ground electrodes 64 and 65 are arranged on both sides of the signal electrode 63 is used,
Not only can the radiation loss be reduced, but the optical waveguide 6
Since the high-frequency electric field is applied in parallel to the Nos. 1 and 62, the driving voltage can be lowered.
【００１６】[0016]
【発明が解決しようとする課題】図２４に示す第３従来
例の半導体マッハツェンダ型光変調器においては、２本
の光導波路５４、５５に対して、直列に高周波電界を印
加する構造としているため、駆動電圧を高くする必要が
あり、低駆動電圧で動作させることができないという問
題点があった。また、進行波型電極５０、５１からなる
高周波導波路の形状がスロットライン型をしているた
め、放射損が大きく、他のシステムとの整合性も悪いと
いう問題点があった。The semiconductor Mach-Zehnder type optical modulator of the third conventional example shown in FIG. 24 has a structure in which a high-frequency electric field is applied in series to the two optical waveguides 54, 55. However, there is a problem in that it is necessary to increase the driving voltage and it is impossible to operate at a low driving voltage. Further, since the shape of the high-frequency waveguide including the traveling-wave electrodes 50 and 51 is a slot line type, there is a problem that radiation loss is large and compatibility with other systems is poor.
【００１７】また、図２５に示す第４従来例の半導体マ
ッハツェンダ型光変調器においては、光導波路６１、６
２に対して直流バイアス電界を印加することができない
ので、光導波路６１、６２をpin型半導体層構造とする
ことができない。このため、コア層に対して高周波電界
を効率的に印加することができず、また、コア層に量子
井戸構造を使用することができないため、屈折率変化率
が低くなり、結果として駆動電圧を高くする必要がある
という問題点があった。Further, in the semiconductor Mach-Zehnder type optical modulator of the fourth conventional example shown in FIG. 25, the optical waveguides 61 and 6 are provided.
Since a DC bias electric field cannot be applied to 2, the optical waveguides 61 and 62 cannot have a pin type semiconductor layer structure. For this reason, a high-frequency electric field cannot be efficiently applied to the core layer, and a quantum well structure cannot be used for the core layer, resulting in a low refractive index change rate, resulting in a drive voltage change. There was a problem that it had to be raised.
【００１８】また、光通信システム上での応用を考える
際には、波長チャープを制御できることは有用である。
しかし、図２４に示す第３従来例の半導体マッハツェン
ダ型光変調器および図２５に示す第４従来例のマッハツ
ェンダ型光変調器は、２本の導波路に反対向きの大きさ
の等しい高周波電界しか与えることができないため、プ
ッシュプル駆動以外の駆動ができず、波長チャープを制
御することは不可能である。波長チャープを制御するに
は、マッハツェンダ型光変調器をシングルアーム駆動す
ることが必要である。Further, when considering the application on the optical communication system, it is useful to be able to control the wavelength chirp.
However, the semiconductor Mach-Zehnder interferometer type optical modulator of the third conventional example shown in FIG. 24 and the Mach-Zehnder interferometer type optical modulator of the fourth conventional example shown in FIG. 25 have only high-frequency electric fields of opposite magnitudes in the two waveguides. Since it cannot be given, driving other than push-pull driving cannot be performed, and it is impossible to control the wavelength chirp. To control the wavelength chirp, it is necessary to drive the Mach-Zehnder type optical modulator with a single arm.
【００１９】本発明は、かかる点に鑑み、プッシュプル
駆動するように構成する場合には、高速かつ低駆動電圧
でプッシュプル駆動することができ、シングルアーム駆
動するように構成する場合には、高速かつ低駆動電圧で
シングルアーム駆動することができるようにした半導体
マッハツェンダ型光変調器を提供することを目的とす
る。In view of the above point, the present invention is capable of performing push-pull driving at a high speed and a low driving voltage when configured to perform push-pull driving, and when configured to perform single-arm driving, It is an object of the present invention to provide a semiconductor Mach-Zehnder type optical modulator capable of high speed and low drive voltage single arm drive.
【００２０】[0020]
【課題を解決するための手段】本発明の半導体マッハツ
ェンダ型光変調器は、半導体基板上に第１の高導電率層
と、信号電極と、第２の高導電率層とを順に配置した部
分を有し、第１、第２の高導電率層上にそれぞれpin型
半導体層からなる第１、第２の光導波路を配置した半導
体マッハツェンダ型光変調器であって、次の第１、第２
の構造のうち、少なくとも、いずれか一方又は両方の構
造を有するというものである。A semiconductor Mach-Zehnder type optical modulator according to the present invention is a portion in which a first high conductivity layer, a signal electrode, and a second high conductivity layer are sequentially arranged on a semiconductor substrate. And a semiconductor Mach-Zehnder type optical modulator in which first and second optical waveguides made of pin type semiconductor layers are arranged on the first and second high-conductivity layers, respectively. Two
Among these structures, at least one or both structures are included.
【００２１】第１の構造は、半導体基板上に第１の光導
波路を信号電極とで挟むように配置した第１の接地電極
と、第１の光導波路上に配置した第１の分布電極と、第
１の高導電率層上に配置した第２の分布電極を有し、信
号電極と第２の分布電極を第１の櫛状配線で結線し、第
１の接地電極と第１の分布電極を第２の櫛状配線で結線
した構造である。The first structure includes a first ground electrode arranged on the semiconductor substrate so as to sandwich the first optical waveguide with a signal electrode, and a first distributed electrode arranged on the first optical waveguide. A second distribution electrode disposed on the first high-conductivity layer, the signal electrode and the second distribution electrode are connected by a first comb-shaped wiring, and the first ground electrode and the first distribution electrode are connected. This is a structure in which electrodes are connected by a second comb-shaped wiring.
【００２２】第２の構造は、半導体基板上に第２の光導
波路を信号電極とで挟むように配置した第２の接地電極
と、第２の光導波路上に配置した第３の分布電極と、第
２の高導電率層上に配置した第４の分布電極を有し、信
号電極と第３の分布電極を第３の櫛状配線で結線し、第
２の接地電極と第４の分布電極を第４の櫛状配線で結線
した構造である。The second structure includes a second ground electrode arranged on the semiconductor substrate so as to sandwich the second optical waveguide with the signal electrode, and a third distributed electrode arranged on the second optical waveguide. , A fourth distribution electrode disposed on the second high-conductivity layer, the signal electrode and the third distribution electrode are connected by a third comb-shaped wiring, and the second ground electrode and the fourth distribution electrode are connected. This is a structure in which electrodes are connected by a fourth comb-shaped wiring.
【００２３】第１の構造を有するようにした場合、第１
の高導電率層を利用して第１の光導波路に直流バイアス
電界を印加し、更に、信号電極から第２の分布電極及び
第１の高導電率層を介して第１の光導波路に高周波信号
を印加する構成とすることにより、第１の光導波路を含
んでなる位相変調器をシングルアーム駆動することがで
きる。In the case of having the first structure, the first
A DC bias electric field is applied to the first optical waveguide using the high-conductivity layer, and a high-frequency wave is applied from the signal electrode to the first optical waveguide through the second distributed electrode and the first high-conductivity layer. With the configuration for applying a signal, the phase modulator including the first optical waveguide can be driven by a single arm.
【００２４】第２の構造を有するようにした場合、第２
の高導電率層を利用して第２の光導波路に直流バイアス
電界を印加し、更に、信号電極から第３の分布電極を介
して第２の光導波路に高周波信号を印加する構成とする
ことにより、第２の光導波路を含んでなる位相変調器を
シングルアーム駆動することができる。In the case of having the second structure, the second structure
A high-conductivity layer is used to apply a DC bias electric field to the second optical waveguide, and a high-frequency signal is applied from the signal electrode to the second optical waveguide through the third distributed electrode. Thus, the phase modulator including the second optical waveguide can be driven by a single arm.
【００２５】第１の構造及び第２の構造を有するように
した場合、第１の高導電率層を利用して第１の光導波路
に直流バイアス電界を印加し、更に、信号電極から第２
の分布電極及び第１の高導電率層を介して第１の光導波
路に高周波信号を印加する構成とすると共に、第２の高
導電率層を利用して第２の光導波路に直流バイアス電界
を印加し、更に、信号電極から第３の分布電極を介して
第２の光導波路に高周波信号を印加する構成とすること
により、第１の光導波路を含んでなる位相変調器と第２
の光導波路を含んでなる位相変調器とをプッシュプル駆
動することができる。In the case of having the first structure and the second structure, a DC bias electric field is applied to the first optical waveguide by using the first high-conductivity layer, and further, from the signal electrode to the second structure.
A high-frequency signal is applied to the first optical waveguide via the distributed electrode and the first high-conductivity layer, and a DC bias electric field is applied to the second optical waveguide by using the second high-conductivity layer. And a high frequency signal is further applied from the signal electrode to the second optical waveguide via the third distribution electrode, thereby providing a phase modulator including the first optical waveguide and a second modulator.
It is possible to perform push-pull driving with respect to the phase modulator including the optical waveguide.
【００２６】[0026]
【発明の実施の形態】以下、図１〜図２１を参照して、
本発明の第１実施形態〜第７実施形態について説明す
る。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, referring to FIGS.
The first to seventh embodiments of the present invention will be described.
【００２７】（第１実施形態・・図１〜図７）図１は本
発明の第１実施形態を示す概略的上面図、図２は図１の
二点鎖線Ｘ３で囲む部分の概略的拡大図、図３は図２の
Ｘ４−Ｘ４線に沿った概略的断面図である。(First Embodiment ... FIGS. 1 to 7) FIG. 1 is a schematic top view showing a first embodiment of the present invention, and FIG. 2 is a schematic enlarged view of a portion surrounded by a chain double-dashed line X3 in FIG. 3 and 4 are schematic cross-sectional views taken along the line X4-X4 in FIG.
【００２８】本発明の第１実施形態は、半導体基板１
と、光導波路２、３と、高周波（マイクロ波）導波路を
なす信号電極４および接地電極５、６と、高導電率層
７、８と、分布電極９、１０、１１、１２と、直流電圧
用電極１３Ａ、１３Ｂ、１４Ａ、１４Ｂを備えている。The first embodiment of the present invention is a semiconductor substrate 1.
, Optical waveguides 2 and 3, signal electrodes 4 and ground electrodes 5 and 6 forming a high frequency (microwave) waveguide, high conductivity layers 7 and 8, distributed electrodes 9, 10, 11 and 12, and direct current It is provided with voltage electrodes 13A, 13B, 14A, 14B.
【００２９】接地電極５と高導電率層７と信号電極４と
高導電率層８と接地電極６は、この順に半導体基板１上
に平行に配置され、光導波路２は高導電率層７上に配置
され、光導波路３は高導電率層８上に配置されている。The ground electrode 5, the high conductivity layer 7, the signal electrode 4, the high conductivity layer 8 and the ground electrode 6 are arranged in parallel in this order on the semiconductor substrate 1, and the optical waveguide 2 is arranged on the high conductivity layer 7. And the optical waveguide 3 is arranged on the high conductivity layer 8.
【００３０】分布電極９は、光導波路２の上部に所定間
隔で配置され、櫛状配線１５により接地電極５に接続さ
れている。分布電極１０は、光導波路３の上部に所定間
隔で配置され、櫛状配線１６により信号電極４に接続さ
れている。The distribution electrodes 9 are arranged on the upper portion of the optical waveguide 2 at predetermined intervals, and are connected to the ground electrode 5 by the comb-shaped wiring 15. The distributed electrodes 10 are arranged on the optical waveguide 3 at a predetermined interval, and are connected to the signal electrodes 4 by comb-shaped wirings 16.
【００３１】分布電極１１は、高導電率層７上に設けら
れた絶縁層２３上に所定間隔で配置され、櫛状配線１７
により信号電極４に接続されている。分布電極１２は、
高導電率層８上に設けられた絶縁層２４上に所定間隔で
配置され、櫛状配線１８により接地電極６に接続されて
いる。The distribution electrodes 11 are arranged on the insulating layer 23 provided on the high-conductivity layer 7 at predetermined intervals, and the comb-shaped wiring 17 is provided.
Is connected to the signal electrode 4. The distributed electrode 12 is
It is arranged at a predetermined interval on the insulating layer 24 provided on the high conductivity layer 8 and is connected to the ground electrode 6 by the comb-shaped wiring 18.
【００３２】直流電圧用電極１３Ａ、１３Ｂは高導電率
層７上の長手方向の両端部に配置され、直流電圧用電極
１４Ａ、１４Ｂは高導電率層８上の長手方向の両端部に
配置されている。The DC voltage electrodes 13A and 13B are arranged on both ends of the high conductivity layer 7 in the longitudinal direction, and the DC voltage electrodes 14A and 14B are arranged on both ends of the high conductivity layer 8 in the longitudinal direction. ing.
【００３３】なお、入力導波路２１は分波器１９によっ
て分波されて光導波路２、３に結合し、光導波路２、３
は合波器２０によって合波されて出力導波路２２に結合
されている。The input waveguide 21 is demultiplexed by the demultiplexer 19 and coupled to the optical waveguides 2 and 3 to obtain the optical waveguides 2 and 3.
Are multiplexed by the multiplexer 20 and coupled to the output waveguide 22.
【００３４】半導体基板１は、例えば、半絶縁性InP基
板よりなる。光導波路２、３は上から順にｐ型半導体
層、ｉ型半導体層、ｎ型半導体層よりなり、ｉ型半導体
層の厚さは凡そ３μｍ以内であり、量子井戸もしくはバ
ルク結晶よりなる。The semiconductor substrate 1 is, for example, a semi-insulating InP substrate. The optical waveguides 2 and 3 are composed of a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer in this order from the top. The thickness of the i-type semiconductor layer is about 3 μm or less, and it is made of a quantum well or a bulk crystal.
【００３５】信号電極４および接地電極５、６は、例え
ば、厚さ３μｍ以上の金メッキよりなり、その間隔は少
なくとも１０μｍ以上である。高導電率層７、８は、例
えば、１×１０18ｃｍ-3以上にｎ型ドープされたInP層
よりなる。高導電率層７、８として金属層を使用しても
良い。The signal electrode 4 and the ground electrodes 5 and 6 are made of, for example, gold plating having a thickness of 3 μm or more, and the distance between them is at least 10 μm or more. The high-conductivity layers 7 and 8 are, for example, InP layers that are n-type doped to 1 × 10 18 cm −3 or more. Metal layers may be used as the high conductivity layers 7 and 8.
【００３６】分布電極９、１０、１１、１２は、例え
ば、金メッキよりなり、各電極の長さおよび周期は１ｍ
ｍより短く、その長さは、典型的には３０〜５００μｍ
程度であり、その周期は、典型的には５０〜５００μｍ
程度である。The distributed electrodes 9, 10, 11, 12 are made of, for example, gold plating, and each electrode has a length and a period of 1 m.
shorter than m and its length is typically 30-500 μm
And the period is typically 50 to 500 μm.
It is a degree.
【００３７】櫛状配線１５、１６、１７、１８は、例え
ば、金メッキよりなり、その長さは１００μｍ以内であ
る。絶縁層２３、２４は、例えば、厚さ１μｍ以内の二
酸化珪素であり、少なくとも分布電極１１と高導電率層
７との間および分布電極１２と高導電率層８との間にリ
ーク電流が生じない程度の厚さを持つ。The comb-shaped wirings 15, 16, 17, and 18 are made of, for example, gold plating and have a length of 100 μm or less. The insulating layers 23 and 24 are, for example, silicon dioxide having a thickness of 1 μm or less, and a leak current is generated at least between the distributed electrode 11 and the high conductivity layer 7 and between the distributed electrode 12 and the high conductivity layer 8. It has a thickness that does not exist.
【００３８】本発明の第１実施形態では、光導波路２と
高導電率層７と分布電極９、１１と絶縁層２３とで第１
の位相変調器２５が構成され、光導波路３と高導電率層
８と分布電極１０、１２と絶縁層２４とで第２の位相変
調器２６が構成されている。In the first embodiment of the present invention, the optical waveguide 2, the high-conductivity layer 7, the distribution electrodes 9 and 11 and the insulating layer 23 form the first embodiment.
Of the optical waveguide 3, the high conductivity layer 8, the distribution electrodes 10 and 12, and the insulating layer 24 form a second phase modulator 26.
【００３９】そして、位相変調器２５については、直流
電圧用電極１３Ａ、１３Ｂのいずれか若しくは両方に直
流電圧源が接続され、位相変調器２６については、直流
電圧用電極１４Ａ、１４Bのいずれか若しくは両方に直
流電圧源が接続される。また、信号電極４と接地電極
５、６との間に高周波信号源２７による高周波信号が印
加される。For the phase modulator 25, a DC voltage source is connected to either or both of the DC voltage electrodes 13A and 13B, and for the phase modulator 26, either of the DC voltage electrodes 14A and 14B or A DC voltage source is connected to both. Further, a high frequency signal from the high frequency signal source 27 is applied between the signal electrode 4 and the ground electrodes 5 and 6.
【００４０】図４は本発明の第１実施形態の動作を説明
するための等価回路図である。図４中、容量２、３はそ
れぞれ光導波路２、３、容量２３、２４はぞれぞれ絶縁
層２３、２４、節点４は信号電極４、節点５、６はそれ
ぞれ接地電極５、６、節点１３Ａ、１４Ａはそれぞれ直
流電圧用電極１３Ａ、１４Ａを表している。FIG. 4 is an equivalent circuit diagram for explaining the operation of the first embodiment of the present invention. In FIG. 4, capacitors 2 and 3 are optical waveguides 2 and 3, capacitors 23 and 24 are insulating layers 23 and 24, node 4 is a signal electrode 4, nodes 5 and 6 are ground electrodes 5 and 6, respectively. The nodes 13A and 14A represent the DC voltage electrodes 13A and 14A, respectively.
【００４１】この例では、光導波路２が逆バイアスされ
るように、直流電圧用電極１３Ａにインダクタ２８を介
して直流電圧源３０が接続されると共に、光導波路３が
逆バイアスされるように、直流電圧用電極１４Ａにイン
ダクタ２９を介して直流電圧源３１が接続されている。In this example, the DC voltage source 30 is connected to the DC voltage electrode 13A via the inductor 28 so that the optical waveguide 2 is reverse-biased, and the optical waveguide 3 is reverse-biased. A DC voltage source 31 is connected to the DC voltage electrode 14A via an inductor 29.
【００４２】インダクタ２８、２９は、例えば、高導電
率層７、８を位相変調器部分から十分長く延ばし、位相
変調器部分から十分離れた位置に直流電圧用電極を設け
ることや、直流電圧源３０、３１からの直流電圧供給用
のリード線で実現することができる。直流電圧源３０、
３１は、共通のものであっても良いし、独立のものであ
っても良い。For the inductors 28 and 29, for example, the high-conductivity layers 7 and 8 are extended sufficiently from the phase modulator portion, a DC voltage electrode is provided at a position sufficiently distant from the phase modulator portion, and a DC voltage source is provided. It can be realized by a lead wire for supplying a DC voltage from 30, 31. DC voltage source 30,
31 may be common or may be independent.
【００４３】また、この例では、接地電極５、６は接地
され、信号電極４と接地電極５、６との間に高周波信号
源２７による高周波信号３２、３３が印加される。な
お、高周波信号３２、３３の振幅は直流電圧源３０、３
１による直流バイアス電圧よりも小さく設定する。Further, in this example, the ground electrodes 5 and 6 are grounded, and the high frequency signals 32 and 33 from the high frequency signal source 27 are applied between the signal electrode 4 and the ground electrodes 5 and 6. The amplitude of the high-frequency signals 32 and 33 depends on the DC voltage sources 30, 3
It is set smaller than the DC bias voltage of 1.
【００４４】図４に示す等価回路は、直流的には図５に
示すように表すことができ、直流電圧源３０、３１によ
る直流バイアス電圧Ｖbiasは、光導波路２、３及び絶縁
層２３、２４に対して同じ方向に印加されることにな
る。これにより、光導波路２、３のpin接合部分はそれ
ぞれ逆バイアスされる。The equivalent circuit shown in FIG. 4 can be expressed as shown in FIG. 5 in terms of direct current, and the direct current bias voltage Vbias generated by the direct current voltage sources 30 and 31 is the optical waveguides 2 and 3 and the insulating layers 23 and 24. Will be applied in the same direction. As a result, the pin junction portions of the optical waveguides 2 and 3 are reverse biased.
【００４５】また、図４に示す等価回路は、高周波的に
は図６に示すように表すことができる。すなわち、光導
波路２、３には、高周波信号３２、３３による高周波電
圧Ｖacが相対的に逆方向に印加される。このとき、絶縁
層２３、２４の容量が光導波路２、３の容量に対して十
分大きければ、ほとんどの高周波電圧は光導波路２、３
に印加されることになる。The equivalent circuit shown in FIG. 4 can be expressed as shown in FIG. 6 in terms of high frequency. That is, the high frequency voltage Vac generated by the high frequency signals 32 and 33 is applied to the optical waveguides 2 and 3 in the opposite direction. At this time, if the capacities of the insulating layers 23 and 24 are sufficiently larger than the capacities of the optical waveguides 2 and 3, most of the high frequency voltage is applied to the optical waveguides 2 and 3.
Will be applied to.
【００４６】光導波路２、３に印加される正味の電界
は、直流バイアス電圧による直流バイアス電界と高周波
信号による高周波電界の足し合わせであり、光導波路
２、３に対する電界の向きは、直流バイアス電界では同
方向、高周波電界では逆方向であるから、光導波路２、
３に印加される正味の電界に差が生じることになる。The net electric field applied to the optical waveguides 2 and 3 is the sum of the DC bias electric field due to the DC bias voltage and the high frequency electric field due to the high frequency signal. The direction of the electric field with respect to the optical waveguides 2 and 3 is the DC bias electric field. In the same direction and in the opposite direction in the high-frequency electric field, the optical waveguide 2,
There will be a difference in the net electric field applied to 3.
【００４７】すなわち、図７に示すように、光導波路２
に印加される電圧が直流バイアス電圧Ｖbiasから下方に
触れて（Ｖbias−Ｖac）となるときは、光導波路３に印
加される電圧は上方に振れて（Ｖbias＋Ｖac）となり、
逆に、光導波路２に印加される電圧が直流バイアス電圧
Ｖbiasから上方に触れて（Ｖbias＋Ｖac）となるとき
は、光導波路３の電圧は下方に振れて（Ｖbias−Ｖac）
となる。That is, as shown in FIG. 7, the optical waveguide 2
When the voltage applied to the DC bias voltage Vbias touches downward (Vbias-Vac), the voltage applied to the optical waveguide 3 swings upward (Vbias + Vac),
On the contrary, when the voltage applied to the optical waveguide 2 touches upward from the DC bias voltage Vbias and becomes (Vbias + Vac), the voltage of the optical waveguide 3 swings downward (Vbias−Vac).
Becomes
【００４８】したがって、本発明の第１実施形態によれ
ば、プッシュプル駆動を実現し、波長チャープを抑える
ことができる。さらに、直流電圧源３０、３１の出力電
圧を調整することにより、位相の調整を行うことができ
る。Therefore, according to the first embodiment of the present invention, push-pull driving can be realized and wavelength chirp can be suppressed. Furthermore, the phase can be adjusted by adjusting the output voltage of the DC voltage sources 30 and 31.
【００４９】また、本発明の第１実施形態によれば、例
えば、光導波路２、３のｉ型半導体層として、厚さ０.
５μｍの量子井戸構造を用い、分布電極９、１０の幅を
５μｍ、長さを１００μｍとし、絶縁層２３、２４に厚
さ０.１μｍの二酸化珪素を用い、分布電極１１、１２
の幅を１０μｍ、長さを１００μｍとしたとき、光導波
路２、３の容量：絶縁層２３、２４の容量の比は１：４
となり、高周波信号源２７から出力される高周波電圧の
うち、８０％程度の高周波電圧を光導波路２、３に印加
させることができる。According to the first embodiment of the present invention, for example, the i-type semiconductor layer of the optical waveguides 2 and 3 has a thickness of 0.
The quantum well structure of 5 μm is used, the widths of the distribution electrodes 9 and 10 are 5 μm and the length is 100 μm, and the insulating layers 23 and 24 are made of silicon dioxide having a thickness of 0.1 μm.
When the width is 10 μm and the length is 100 μm, the ratio of the capacitance of the optical waveguides 2 and 3 to the capacitance of the insulating layers 23 and 24 is 1: 4.
Therefore, about 80% of the high frequency voltage output from the high frequency signal source 27 can be applied to the optical waveguides 2 and 3.
【００５０】また、本発明の第１実施形態では、２本の
位相変調器２５、２６が並列に接続されているため、２
本の位相変調器２５、２６に対して、図２４に示す第３
従来例と比較して、正味約１.６倍の高周波電圧を印加
することができる。Further, in the first embodiment of the present invention, since the two phase modulators 25 and 26 are connected in parallel,
For the phase modulators 25 and 26 of the book, the third phase modulator shown in FIG.
It is possible to apply a high frequency voltage approximately 1.6 times higher than that of the conventional example.
【００５１】更に、本発明の第１実施形態では、光導波
路２、３のｉ型半導体層（コア層）に量子井戸構造を用
いることができるため、量子閉じ込めシュタルク効果に
より、３×１０-10ｍ／Ｖ程度の屈折率変化（バルク結
晶では約２×１０-11ｍ／Ｖ）を得ることができる。Further, in the first embodiment of the present invention, since the quantum well structure can be used for the i-type semiconductor layer (core layer) of the optical waveguides 2 and 3, the quantum confinement Stark effect results in 3 × 10 −10. A refractive index change of about m / V (about 2 × 10 −11 m / V for a bulk crystal) can be obtained.
【００５２】ここで、量子井戸への光の閉じ込め係数を
０.３３とすれば、本発明の第１実施形態では、図２４
に示す第３従来例に比較して０.６倍、図２５に示す第
４従来例に比較して０.１倍の電圧で駆動することがで
きる。Here, assuming that the confinement factor of light in the quantum well is 0.33, in the first embodiment of the present invention, FIG.
It can be driven at a voltage 0.6 times that of the third conventional example shown in FIG. 1 and 0.1 times that of the fourth conventional example shown in FIG.
【００５３】以上のように、本発明の第１実施形態によ
れば、光導波路２、３をpin型半導体層で構成すると共
に、光導波路２、３に並列に高周波信号を印加すること
ができる構成としたことにより、高速かつ低駆動電圧で
位相変調器２５、２６をプッシュプル駆動することがで
きる。As described above, according to the first embodiment of the present invention, the optical waveguides 2 and 3 can be composed of the pin type semiconductor layer, and a high frequency signal can be applied in parallel to the optical waveguides 2 and 3. With the configuration, the phase modulators 25 and 26 can be push-pull driven at high speed and with low driving voltage.
【００５４】（第２実施形態・・図８）図８は本発明の
第２実施形態を示す概略的断面図である。本発明の第２
実施形態は、信号電極４および接地電極５、６と半導体
基板１との間にそれぞれ適当な厚さの絶縁層３４、３
５、３６（例えば、二酸化珪素）を介在させ、その他に
ついては、本発明の第１実施形態と同様に構成したもの
である。(Second Embodiment ... FIG. 8) FIG. 8 is a schematic sectional view showing a second embodiment of the present invention. Second of the present invention
In the embodiment, between the signal electrode 4 and the ground electrodes 5 and 6 and the semiconductor substrate 1, the insulating layers 34 and 3 having appropriate thicknesses are provided.
5 and 36 (for example, silicon dioxide) are interposed, and the others are configured similarly to the first embodiment of the present invention.
【００５５】本発明の第２実施形態によれば、本発明の
第１実施形態と同様に、高速かつ低駆動電圧で位相変調
器２５、２６をプッシュプル駆動することができると共
に、高周波信号の位相速度を調整し、高周波信号の位相
速度と光の位相速度を整合させることができる。According to the second embodiment of the present invention, similarly to the first embodiment of the present invention, the phase modulators 25 and 26 can be push-pull driven at a high speed and with a low driving voltage, and a high frequency signal The phase velocity can be adjusted to match the phase velocity of the high frequency signal with the phase velocity of the light.
【００５６】（第３実施形態・・図９）図９は本発明の
第３実施形態を示す概略的断面図である。本発明の第３
実施形態は、高導電率層７と信号電極４および接地電極
５との間の半導体基板部分、高導電率層８と信号電極４
および接地電極６との間の半導体基板部分に適当な深さ
の溝３７、３８、３９、４０を設け、その他について
は、本発明の第１実施形態と同様に構成したものであ
る。(Third Embodiment ... FIG. 9) FIG. 9 is a schematic sectional view showing a third embodiment of the present invention. Third of the present invention
The embodiment is a semiconductor substrate portion between the high conductivity layer 7 and the signal electrode 4 and the ground electrode 5, the high conductivity layer 8 and the signal electrode 4.
Grooves 37, 38, 39, 40 having appropriate depths are provided in the semiconductor substrate portion between the ground electrode 6 and the ground electrode 6, and the rest are configured similarly to the first embodiment of the present invention.
【００５７】本発明の第３実施形態によれば、本発明の
第１実施形態と同様に、高速かつ低駆動電圧で位相変調
器２５、２６をプッシュプル駆動することができると共
に、高周波信号の位相速度を調整し、高周波信号の位相
速度と光の位相速度を整合させることができる。According to the third embodiment of the present invention, similarly to the first embodiment of the present invention, the phase modulators 25 and 26 can be push-pull driven at a high speed and with a low driving voltage, and a high frequency signal The phase velocity can be adjusted to match the phase velocity of the high frequency signal with the phase velocity of the light.
【００５８】（第４実施形態・・図１０）図１０は本発
明の第４実施形態を示す図であり、図１０Ａは概略的上
面図、図１０Ｂは概略的側面図である。本発明の第４実
施形態は、光導波路２、３のｐ型半導体層のうち、上部
に分布電極９、１０のない部分を半絶縁層４１で置き換
え、その他については、本発明の第１実施形態と同様に
構成したものである。(Fourth Embodiment ... FIG. 10) FIG. 10 is a view showing a fourth embodiment of the present invention, FIG. 10A is a schematic top view, and FIG. 10B is a schematic side view. In the fourth embodiment of the present invention, the p-type semiconductor layers of the optical waveguides 2 and 3 are replaced with the semi-insulating layer 41 in the portions where the distributed electrodes 9 and 10 are not provided above. The configuration is similar to that of the embodiment.
【００５９】本発明の第４実施形態によれば、本発明の
第１実施形態と同様に、高速かつ低駆動電圧で位相変調
器２５、２６をプッシュプル駆動することができると共
に、高周波信号および光の損失を低減することができ
る。According to the fourth embodiment of the present invention, similarly to the first embodiment of the present invention, the phase modulators 25 and 26 can be push-pull driven at a high speed and with a low driving voltage, and high frequency signals and The loss of light can be reduced.
【００６０】（第５実施形態・・図１１）図１１は本発
明の第５実施形態の概略的断面図である。本発明の第５
実施形態は、光導波路２、３の側面を半絶縁性半導体４
２、４３、４４、４５で被覆し、その他については、本
発明の第１実施形態と同様に構成したものである。(Fifth Embodiment ... FIG. 11) FIG. 11 is a schematic sectional view of a fifth embodiment of the present invention. Fifth of the present invention
In the embodiment, the semi-insulating semiconductor 4 is provided on the side surfaces of the optical waveguides 2 and 3.
2, 43, 44, and 45, and the others are configured similarly to the first embodiment of the present invention.
【００６１】本発明の第５実施形態によれば、本発明の
第１実施形態と同様に、高速かつ低駆動電圧で位相変調
器２５、２６をプッシュプル駆動することができると共
に、光のモードの安定化と、素子の高信頼性を得ること
ができる。According to the fifth embodiment of the present invention, similarly to the first embodiment of the present invention, the phase modulators 25 and 26 can be push-pull driven at a high speed and with a low driving voltage, and the mode of the light can be changed. Can be stabilized and high reliability of the device can be obtained.
【００６２】（第６実施形態・・図１２〜図１８）図１
２は本発明の第６実施形態を示す概略的上面図、図１３
は図１２の二点鎖線Ｘ５で囲む部分の概略的拡大図、図
１４は図１３のＸ６−Ｘ６線に沿った概略的断面図であ
る。(Sixth Embodiment ... FIGS. 12 to 18) FIG.
2 is a schematic top view showing a sixth embodiment of the present invention, FIG.
12 is a schematic enlarged view of a portion surrounded by a chain double-dashed line X5 in FIG. 12, and FIG. 14 is a schematic sectional view taken along line X6-X6 in FIG.
【００６３】本発明の第６実施形態は、本発明の第１実
施形態が設ける分布電極９、１１、櫛型配線１５、１７
および絶縁層２３を設けないようにし、その他について
は、本発明の第１実施形態と同様に構成したものであ
る。In the sixth embodiment of the present invention, the distribution electrodes 9 and 11 and the comb-shaped wirings 15 and 17 provided in the first embodiment of the present invention are provided.
The insulating layer 23 is not provided, and the rest is the same as that of the first embodiment of the present invention.
【００６４】図１５は本発明の第６実施形態の動作を説
明するための等価回路図である。図１５中、容量３は光
導波路３、容量２４は絶縁層２４、節点４は信号電極
４、節点６は接地電極６、節点１４Ａは直流電圧用電極
１４Ａを表している。FIG. 15 is an equivalent circuit diagram for explaining the operation of the sixth embodiment of the present invention. In FIG. 15, the capacitor 3 represents the optical waveguide 3, the capacitor 24 represents the insulating layer 24, the node 4 represents the signal electrode 4, the node 6 represents the ground electrode 6, and the node 14A represents the DC voltage electrode 14A.
【００６５】この例では、光導波路３が逆バイアスされ
るように、直流電圧用電極１４Ａにインダクタ２９を介
して直流電圧源３１が接続されている。インダクタ２９
は、例えば、高導電率層８を位相変調器部分から十分長
く延ばし、位相変調器部分から十分離れた位置に電極を
設けることや、直流電圧源３１からの直流電圧供給用の
リード線で実現できる。In this example, a DC voltage source 31 is connected to the DC voltage electrode 14A via an inductor 29 so that the optical waveguide 3 is reversely biased. Inductor 29
Is realized by, for example, extending the high-conductivity layer 8 from the phase modulator portion sufficiently long, providing an electrode at a position sufficiently distant from the phase modulator portion, or using a lead wire for supplying a DC voltage from the DC voltage source 31. it can.
【００６６】また、接地電極６は接地され、信号電極４
と接地電極６との間に高周波信号源２７による高周波信
号３３が印加される。なお、高周波信号３３の振幅は直
流電圧源３１による直流バイアス電圧よりも小さく設定
する。The ground electrode 6 is grounded and the signal electrode 4
A high frequency signal 33 is applied between the high frequency signal source 27 and the ground electrode 6. The amplitude of the high frequency signal 33 is set smaller than the DC bias voltage from the DC voltage source 31.
【００６７】図１５に示す等価回路は、直流的には図１
６に示すように表すことができ、直流電圧源３１による
直流バイアス電圧Ｖbiasは、光導波路３及び絶縁層２４
に対して同じ方向に印加されることになる。これによっ
て、光導波路３のpin接合部分はそれぞれ逆バイアスさ
れる。The equivalent circuit shown in FIG. 15 is equivalent to that shown in FIG.
6, the DC bias voltage Vbias generated by the DC voltage source 31 is equal to the optical waveguide 3 and the insulating layer 24.
Will be applied in the same direction. As a result, the pin junction portions of the optical waveguide 3 are reverse biased.
【００６８】また、図１５に示す等価回路は、高周波的
には図１７に示すように表すことができる。すなわち、
光導波路３には、高周波信号３３による高周波電圧Ｖac
が印加される。このとき、絶縁層２４の容量が光導波路
３の容量に対して十分大きければ、ほとんどの高周波電
圧は光導波路３に印加される。The equivalent circuit shown in FIG. 15 can be expressed as shown in FIG. 17 in terms of high frequency. That is,
The optical waveguide 3 has a high frequency voltage Vac generated by the high frequency signal 33.
Is applied. At this time, if the capacitance of the insulating layer 24 is sufficiently larger than the capacitance of the optical waveguide 3, most of the high frequency voltage is applied to the optical waveguide 3.
【００６９】本発明の第６実施形態によれば、位相変調
器２６を高速かつ低駆動電圧でシングルアーム駆動する
ことができると共に、図１８に示すように、直流バイア
ス電圧Ｖbiasを調整することにより、波長チャープパラ
メータαの符号を制御することができる。According to the sixth embodiment of the present invention, the phase modulator 26 can be driven by a single arm at a high speed and with a low driving voltage, and by adjusting the DC bias voltage Vbias as shown in FIG. , The sign of the wavelength chirp parameter α can be controlled.
【００７０】なお、位相変調器２６をシングルアーム駆
動するためには、図１に示す分布電極９、１１、櫛型配
線１５、１７および絶縁層２３を設けないようにし、そ
の他については、本発明の第２実施形態〜第５実施形態
のいずれかと同様に構成することもできる。In order to drive the phase modulator 26 with a single arm, the distribution electrodes 9 and 11, the comb-shaped wirings 15 and 17, and the insulating layer 23 shown in FIG. The second embodiment to the fifth embodiment can be configured in the same manner.
【００７１】また、図１に示す櫛型配線１５、１７を設
けないようにするか、あるいは、櫛型配線１５、１７の
いずれか又は両方を切断するようにし、その他について
は、本発明の第１実施形態〜第５実施形態のいずれかと
同様に構成しても良い。また、位相変調器２６の代わり
に、位相変調器２５をシングルアーム駆動するように構
成しても良い。Further, the comb-shaped wirings 15 and 17 shown in FIG. 1 are not provided, or either or both of the comb-shaped wirings 15 and 17 are cut off. You may comprise similarly to any of 1st Embodiment-5th Embodiment. Further, instead of the phase modulator 26, the phase modulator 25 may be configured to be driven by a single arm.
【００７２】（第７実施形態・・図１９〜図２１）図１
９は本発明の第７実施形態を示す概略的上面図、図２０
は図１９の二点鎖線Ｘ７で囲む部分の概略的拡大図、図
２１は図２０のＸ８−Ｘ８線に沿った概略的断面図であ
る。(Seventh Embodiment ... FIGS. 19 to 21) FIG.
9 is a schematic top view showing a seventh embodiment of the present invention, FIG.
Is a schematic enlarged view of a portion surrounded by a chain double-dashed line X7 in FIG. 19, and FIG. 21 is a schematic sectional view taken along line X8-X8 in FIG.
【００７３】本発明の第７実施形態は、本発明の第６実
施形態が設ける接地電極５を設けないようにし、その他
については、本発明の第６実施形態と同様に構成したも
のである。すなわち、本発明の第７実施形態は、高周波
導波路をスロットライン型にしたものである。The seventh embodiment of the present invention has the same structure as the sixth embodiment of the present invention except that the ground electrode 5 provided in the sixth embodiment of the present invention is not provided. That is, the seventh embodiment of the present invention is a slot line type high frequency waveguide.
【００７４】本発明の第７実施形態は、本発明の第６実
施形態と同様に、位相変調器２６をシングルアーム駆動
することができると共に、直流バイアス電圧Ｖbiasを調
整することにより、波長チャープパラメータαの符号を
制御することができる。Like the sixth embodiment of the present invention, the seventh embodiment of the present invention can drive the phase modulator 26 with a single arm and adjust the DC bias voltage Vbias to adjust the wavelength chirp parameter. The sign of α can be controlled.
【００７５】また、本発明の第７実施形態によれば、光
導波路３のｐ型半導体層うち、上部に分布電極１０のな
い部分を半絶縁層で置き換え、光導波路３のｉ型半導体
層を１μｍとし、さらに、絶縁層２４を光導波路３と同
じ容量を持つようにし、分布電極長を３０μｍ、周期を
５０μｍとしたとき、４０ＧＨzの高周波信号の消衰係
数は約７０ｍ-1となるが、これは進行波型電極を有する
図２３に示す第２従来例による約２７０ｍ-1の約１／４
となる。したがって、高周波まで低損失な高周波導波路
が実現でき、更なる高速動作が可能となる。According to the seventh embodiment of the present invention, the p-type semiconductor layer of the optical waveguide 3 is replaced with a semi-insulating layer in a portion where the distributed electrode 10 is not provided on the upper portion, and the i-type semiconductor layer of the optical waveguide 3 is replaced with the semi-insulating layer. When the insulating layer 24 has the same capacitance as the optical waveguide 3, the distributed electrode length is 30 μm, and the period is 50 μm, the extinction coefficient of the high-frequency signal of 40 GHz is about 70 m −1 . This is about 1/4 of about 270 m -1 according to the second conventional example shown in FIG. 23 having a traveling wave type electrode.
Becomes Therefore, a high-frequency waveguide with low loss up to high frequencies can be realized, and further high-speed operation becomes possible.
【００７６】なお、位相変調器２６をシングルアーム駆
動するためには、図１に示す接地電極５、分布電極９、
１１、櫛型配線１５、１７および絶縁層２３を設けない
ようにし、その他については、本発明の第２実施形態〜
第５実施形態のいずれかと同様に構成することもでき
る。In order to drive the phase modulator 26 with a single arm, the ground electrode 5, the distribution electrode 9, and the distribution electrode 9 shown in FIG.
11, the comb-shaped wirings 15 and 17 and the insulating layer 23 are not provided, and the others are the same as the second embodiment of the present invention.
It can also be configured in the same manner as any of the fifth embodiments.
【００７７】また、図１に示す接地電極５および櫛型配
線１５、１７を設けないようにするか、あるいは、接地
電極５を設けないようにすると共に、櫛型配線１７を切
断するようにし、その他については、本発明の第１実施
形態〜第５実施形態のいずれかと同様に構成しても良
い。また、位相変調器２６の代わりに、位相変調器２５
をシングルアーム駆動するように構成しても良い。Further, the ground electrode 5 and the comb-shaped wirings 15 and 17 shown in FIG. 1 are not provided, or the ground electrode 5 is not provided and the comb-shaped wiring 17 is cut off. Others may be configured similarly to any of the first to fifth embodiments of the present invention. Also, instead of the phase modulator 26, the phase modulator 25
May be configured to be driven by a single arm.
【００７８】ここで、本発明を整理すると、本発明は、
以下の半導体マッハツェンダ型光変調器を含む。Here, the present invention is summarized as follows.
The following semiconductor Mach-Zehnder type optical modulators are included.
【００７９】（付記１）半導体基板上に第１の高導電率
層と、信号電極と、第２の高導電率層とを順に配置した
部分を有し、前記第１、第２の高導電率層上にそれぞれ
pin型半導体層からなる第１、第２の光導波路を配置し
た半導体マッハツェンダ型光変調器であって、前記半導
体基板上に前記第１の光導波路を前記信号電極とで挟む
ように配置した第１の接地電極と、前記第１の光導波路
上に配置した第１の分布電極と、前記第１の高導電率層
上に配置した第２の分布電極を有し、前記信号電極と前
記第２の分布電極を第１の櫛状配線で結線し、前記第１
の接地電極と前記第１の分布電極を第２の櫛状配線で結
線した第１の構造、および、前記半導体基板上に前記第
２の光導波路を前記信号電極とで挟むように配置した第
２の接地電極と、前記第２の光導波路上に配置した第３
の分布電極と、前記第２の高導電率層上に配置した第４
の分布電極を有し、前記信号電極と前記第３の分布電極
を第３の櫛状配線で結線し、前記第２の接地電極と前記
第４の分布電極を第４の櫛状配線で結線した第２の構造
のうち、いずれか一方又は両方の構造を有することを特
徴とする半導体マッハツェンダ型光変調器。(Supplementary Note 1) The semiconductor substrate has a portion in which a first high conductivity layer, a signal electrode, and a second high conductivity layer are arranged in this order, and the first and second high conductivity layers are provided. Each on the stratum
A semiconductor Mach-Zehnder type optical modulator in which first and second optical waveguides made of a pin type semiconductor layer are arranged, wherein the first optical waveguide is arranged on the semiconductor substrate so as to be sandwiched by the signal electrode. A first ground electrode, a first distributed electrode arranged on the first optical waveguide, and a second distributed electrode arranged on the first high-conductivity layer. The two distributed electrodes are connected by the first comb-shaped wiring,
A first structure in which the ground electrode and the first distributed electrode are connected by a second comb-shaped wiring, and a second structure in which the second optical waveguide is arranged on the semiconductor substrate so as to be sandwiched between the signal electrode and the second optical waveguide. Second ground electrode, and a third electrode disposed on the second optical waveguide.
Distributed electrode, and a fourth electrode disposed on the second high-conductivity layer.
The distribution electrode, the signal electrode and the third distribution electrode are connected by a third comb-shaped wiring, and the second ground electrode and the fourth distribution electrode are connected by a fourth comb-shaped wiring. 2. A semiconductor Mach-Zehnder type optical modulator having one or both of the above-mentioned second structures.
【００８０】（付記２）前記第１の高導電率層と前記第
２の分布電極との間および前記第２の高導電率層と前記
第４の分布電極との間にそれぞれ誘電体層を介在させて
いることを特徴とする付記１記載の半導体マッハツェン
ダ型光変調器。(Supplementary Note 2) Dielectric layers are respectively formed between the first high conductivity layer and the second distributed electrode and between the second high conductivity layer and the fourth distributed electrode. The semiconductor Mach-Zehnder interferometer type optical modulator according to appendix 1, wherein the optical modulator is provided.
【００８１】（付記３）前記半導体基板と前記信号電極
および前記第１、第２の接地電極との間にそれぞれ誘電
体層を介在させていることを特徴とする付記１記載の半
導体マッハツェンダ型光変調器。(Supplementary Note 3) A semiconductor Mach-Zehnder type light according to Supplementary Note 1, wherein dielectric layers are respectively interposed between the semiconductor substrate and the signal electrode and the first and second ground electrodes. Modulator.
【００８２】（付記４）前記信号電極と前記第１の高導
電率層との間の半導体基板部分、前記第１の高導電率層
と前記第１の接地電極との間の半導体基板部分、前記信
号電極と前記第２の高導電率層との間の半導体基板部
分、および、前記第２の高導電率層と前記第２の接地電
極との間の半導体基板部分にそれぞれ溝を形成している
ことを特徴とする付記１記載の半導体マッハツェンダ型
光変調器。(Supplementary Note 4) A semiconductor substrate portion between the signal electrode and the first high conductivity layer, a semiconductor substrate portion between the first high conductivity layer and the first ground electrode, Grooves are formed in a semiconductor substrate portion between the signal electrode and the second high conductivity layer and a semiconductor substrate portion between the second high conductivity layer and the second ground electrode, respectively. The semiconductor Mach-Zehnder interferometer type optical modulator described in appendix 1.
【００８３】（付記５）前記第１の光導波路の最上層の
半導体層のうち、上部に前記第１の分布電極がない部
分、および、前記第２の光導波路の最上層の半導体層の
うち、上部に前記第２の分布電極がない部分をそれぞれ
半絶縁層で置き換えていることを特徴とする付記１記載
の半導体マッハツェンダ型光変調器。(Supplementary Note 5) Of the uppermost semiconductor layer of the first optical waveguide, the portion where the first distributed electrode is not provided above and the uppermost semiconductor layer of the second optical waveguide. The semiconductor Mach-Zehnder type optical modulator according to appendix 1, wherein the portions where the second distributed electrode is not provided are replaced with semi-insulating layers.
【００８４】（付記６）前記第１、第２の光導波路の側
面を半絶縁層で被覆していることを特徴とする付記１記
載の半導体マッハツェンダ型光変調器。(Supplementary note 6) The semiconductor Mach-Zehnder type optical modulator according to supplementary note 1, wherein the side surfaces of the first and second optical waveguides are covered with a semi-insulating layer.
【００８５】（付記７）前記第１、第２の光導波路のｉ
型半導体層を量子井戸構造としていることを特徴とする
付記１記載の半導体マッハツェンダ型光変調器。(Supplementary Note 7) i of the first and second optical waveguides
2. The semiconductor Mach-Zehnder type optical modulator according to appendix 1, wherein the type semiconductor layer has a quantum well structure.
【００８６】[0086]
【発明の効果】以上のように、本発明によれば、プッシ
ュプル駆動するように構成する場合には、高速かつ低駆
動電圧でプッシュプル駆動することができ、シングルア
ーム駆動するように構成する場合には、高速かつ低駆動
電圧でシングルアーム駆動することができる。As described above, according to the present invention, when the push-pull drive is configured, the push-pull drive can be performed at a high speed and a low drive voltage, and the single-arm drive is configured. In this case, single arm drive can be performed at high speed and low drive voltage.
【図１】本発明の第１実施形態を示す概略的上面図であ
る。FIG. 1 is a schematic top view showing a first embodiment of the present invention.
【図２】図１の二点鎖線Ｘ３で囲む部分の概略的拡大図
である。FIG. 2 is a schematic enlarged view of a portion surrounded by a chain double-dashed line X3 in FIG.
【図３】図２のＸ４−Ｘ４線に沿った概略的断面図であ
る。3 is a schematic cross-sectional view taken along line X4-X4 of FIG.
【図４】本発明の第１実施形態の動作を説明するための
等価回路図である。FIG. 4 is an equivalent circuit diagram for explaining the operation of the first embodiment of the present invention.
【図５】本発明の第１実施形態の動作を説明するための
直流的等価回路図である。FIG. 5 is a DC equivalent circuit diagram for explaining the operation of the first embodiment of the present invention.
【図６】本発明の第１実施形態の動作を説明するための
高周波的等価回路図である。FIG. 6 is a high frequency equivalent circuit diagram for explaining the operation of the first embodiment of the present invention.
【図７】本発明の第１実施形態の動作を説明するための
図である。FIG. 7 is a diagram for explaining the operation of the first embodiment of the present invention.
【図８】本発明の第２実施形態を示す概略的断面図であ
る。FIG. 8 is a schematic cross-sectional view showing a second embodiment of the present invention.
【図９】本発明の第３実施形態を示す概略的断面図であ
る。FIG. 9 is a schematic sectional view showing a third embodiment of the present invention.
【図１０】本発明の第４実施形態を示す図である。FIG. 10 is a diagram showing a fourth embodiment of the present invention.
【図１１】本発明の第５実施形態を示す概略的断面図で
ある。FIG. 11 is a schematic cross-sectional view showing a fifth embodiment of the present invention.
【図１２】本発明の第６実施形態を示す概略的上面図で
ある。FIG. 12 is a schematic top view showing a sixth embodiment of the present invention.
【図１３】図１２の二点鎖線Ｘ５で囲む部分の概略的拡
大図である。13 is a schematic enlarged view of a portion surrounded by a chain double-dashed line X5 in FIG.
【図１４】図１３のＸ６−Ｘ６線に沿った概略的断面図
である。14 is a schematic cross-sectional view taken along line X6-X6 of FIG.
【図１５】本発明の第６実施形態の動作を説明するため
の等価回路図である。FIG. 15 is an equivalent circuit diagram for explaining the operation of the sixth embodiment of the present invention.
【図１６】本発明の第６実施形態の動作を説明するため
の直流的等価回路図である。FIG. 16 is a DC equivalent circuit diagram for explaining the operation of the sixth embodiment of the present invention.
【図１７】本発明の第６実施形態の動作を説明するため
の高周波的等価回路図である。FIG. 17 is a high frequency equivalent circuit diagram for explaining the operation of the sixth embodiment of the present invention.
【図１８】本発明の第６実施形態の動作を説明するため
の図である。FIG. 18 is a diagram for explaining the operation of the sixth embodiment of the present invention.
【図１９】本発明の第７実施形態を示す概略的上面図で
ある。FIG. 19 is a schematic top view showing a seventh embodiment of the present invention.
【図２０】図１９の二点鎖線Ｘ７で囲む部分の概略的拡
大図である。20 is a schematic enlarged view of a portion surrounded by a chain double-dashed line X7 in FIG.
【図２１】図２０のＸ８−Ｘ８線に沿った概略的断面図
である。21 is a schematic cross-sectional view taken along line X8-X8 of FIG.
【図２２】第１従来例の半導体マッハツェンダ型光変調
器（集中定数型電極を有する半導体マッハツェンダ型光
変調器の一例）を示す図である。FIG. 22 is a diagram showing a semiconductor Mach-Zehnder optical modulator of the first conventional example (an example of a semiconductor Mach-Zehnder optical modulator having a lumped constant electrode).
【図２３】第２従来例の半導体マッハツェンダ型光変調
器（進行波型電極を有する半導体マッハツェンダ型光変
調器の一例）を示す図である。FIG. 23 is a diagram showing a semiconductor Mach-Zehnder optical modulator of a second conventional example (an example of a semiconductor Mach-Zehnder optical modulator having a traveling wave electrode).
【図２４】第３従来例の半導体マッハツェンダ型光変調
器を示す図である。FIG. 24 is a diagram showing a semiconductor Mach-Zehnder interferometer type optical modulator according to a third conventional example.
【図２５】第４従来例の半導体マッハツェンダ型光変調
器を示す図である。FIG. 25 is a diagram showing a semiconductor Mach-Zehnder interferometer type optical modulator according to a fourth conventional example.
１ 半導体基板 ２、３ 光導波路 ４ 信号電極 ５、６ 接地電極 ７、８ 高導電率層 ９、１０、１１、１２ 分布電極 １３Ａ、１３Ｂ、１４Ａ、１４Ｂ 直流電圧用電極 1 Semiconductor substrate 2, 3 optical waveguide 4 signal electrodes 5, 6 Ground electrode 7,8 High conductivity layer 9, 10, 11, 12 distributed electrodes 13A, 13B, 14A, 14B DC voltage electrodes
───────────────────────────────────────────────────── フロントページの続き (72)発明者 秋山 傑 神奈川県川崎市中原区上小田中４丁目１番 １号 富士通株式会社内 Ｆターム(参考） 2H079 AA02 AA12 BA01 BA03 DA16 DA22 EA04 EA05 EA07 EA08 EB04 EB14 EB15 HA15 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Jie Akiyama 4-1, Kamiodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa No. 1 within Fujitsu Limited F-term (reference) 2H079 AA02 AA12 BA01 BA03 DA16 DA22 EA04 EA05 EA07 EA08 EB04 EB14 EB15 HA15
Claims (5)
電極と、第２の高導電率層とを順に配置した部分を有
し、 前記第１、第２の高導電率層上にそれぞれpin型半導体
層からなる第１、第２の光導波路を配置した半導体マッ
ハツェンダ型光変調器であって、 前記半導体基板上に前記第１の光導波路を前記信号電極
とで挟むように配置した第１の接地電極と、前記第１の
光導波路上に配置した第１の分布電極と、前記第１の高
導電率層上に配置した第２の分布電極を有し、 前記信号電極と前記第２の分布電極を第１の櫛状配線で
結線し、前記第１の接地電極と前記第１の分布電極を第
２の櫛状配線で結線した第１の構造、および、 前記半導体基板上に前記第２の光導波路を前記信号電極
とで挟むように配置した第２の接地電極と、前記第２の
光導波路上に配置した第３の分布電極と、前記第２の高
導電率層上に配置した第４の分布電極を有し、 前記信号電極と前記第３の分布電極を第３の櫛状配線で
結線し、前記第２の接地電極と前記第４の分布電極を第
４の櫛状配線で結線した第２の構造のうち、いずれか一
方又は両方の構造を有することを特徴とする半導体マッ
ハツェンダ型光変調器。1. A first substrate having a high conductivity layer, a signal electrode, and a second high conductivity layer arranged in this order on a semiconductor substrate, wherein the first and second high conductivity layers are provided. A semiconductor Mach-Zehnder type optical modulator in which first and second optical waveguides each composed of a pin type semiconductor layer are arranged, wherein the first optical waveguide is sandwiched between the signal electrode and the semiconductor substrate. A first distributed electrode arranged on the first optical waveguide, a first distributed electrode arranged on the first optical waveguide, and a second distributed electrode arranged on the first high-conductivity layer; A first structure in which the first distributed electrode and the second distributed electrode are connected by a first comb-shaped wiring, and the first ground electrode and the first distributed electrode are connected by a second comb-shaped wiring; and the semiconductor A second ground electrode arranged on the substrate so as to sandwich the second optical waveguide with the signal electrode; A third distribution electrode arranged on the optical waveguide and a fourth distribution electrode arranged on the second high-conductivity layer, wherein the signal electrode and the third distribution electrode have a third comb shape. A semiconductor having one or both of a second structure in which the second ground electrode and the fourth distributed electrode are connected by a wiring and connected by a fourth comb-shaped wiring. Mach-Zehnder type optical modulator.
極との間および前記第２の高導電率層と前記第４の分布
電極との間にそれぞれ誘電体層を介在させていることを
特徴とする請求項１記載の半導体マッハツェンダ型光変
調器。2. A dielectric layer is interposed between the first high-conductivity layer and the second distributed electrode and between the second high-conductivity layer and the fourth distributed electrode, respectively. The semiconductor Mach-Zehnder type optical modulator according to claim 1, wherein
第１、第２の接地電極との間にそれぞれ誘電体層を介在
させていることを特徴とする請求項１記載の半導体マッ
ハツェンダ型光変調器。3. The semiconductor Mach-Zehnder type optical modulation according to claim 1, wherein dielectric layers are respectively interposed between the semiconductor substrate and the signal electrode and the first and second ground electrodes. vessel.
間の半導体基板部分、前記第１の高導電率層と前記第１
の接地電極との間の半導体基板部分、前記信号電極と前
記第２の高導電率層との間の半導体基板部分、および、
前記第２の高導電率層と前記第２の接地電極との間の半
導体基板部分にそれぞれ溝を形成していることを特徴と
する請求項１記載の半導体マッハツェンダ型光変調器。4. A semiconductor substrate portion between the signal electrode and the first high conductivity layer, the first high conductivity layer and the first high conductivity layer.
A semiconductor substrate portion between the ground electrode and the semiconductor electrode portion, the semiconductor substrate portion between the signal electrode and the second high-conductivity layer, and
2. The semiconductor Mach-Zehnder interferometer type optical modulator according to claim 1, wherein a groove is formed in a semiconductor substrate portion between the second high conductivity layer and the second ground electrode.
うち、上部に前記第１の分布電極がない部分、および、
前記第２の光導波路の最上層の半導体層のうち、上部に
前記第２の分布電極がない部分をそれぞれ半絶縁層で置
き換えていることを特徴とする請求項１記載の半導体マ
ッハツェンダ型光変調器。5. A portion of the uppermost semiconductor layer of the first optical waveguide where the first distributed electrode is not provided, and
2. The semiconductor Mach-Zehnder type optical modulation according to claim 1, wherein, in the uppermost semiconductor layer of the second optical waveguide, the portions where the second distributed electrode is not provided above are replaced with semi-insulating layers. vessel.
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|---|---|---|---|
| JP2002131109A JP3823873B2 (en) | 2002-05-07 | 2002-05-07 | Semiconductor Mach-Zehnder optical modulator |
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