JP2003264170A - Plasma treatment method - Google Patents
Plasma treatment methodInfo
- Publication number
- JP2003264170A JP2003264170A JP2002104160A JP2002104160A JP2003264170A JP 2003264170 A JP2003264170 A JP 2003264170A JP 2002104160 A JP2002104160 A JP 2002104160A JP 2002104160 A JP2002104160 A JP 2002104160A JP 2003264170 A JP2003264170 A JP 2003264170A
- Authority
- JP
- Japan
- Prior art keywords
- film
- mask
- plasma
- processing container
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000009832 plasma treatment Methods 0.000 title claims description 9
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000006227 byproduct Substances 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract 3
- 239000007789 gas Substances 0.000 claims description 72
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 43
- 229910052710 silicon Inorganic materials 0.000 claims description 43
- 239000010703 silicon Substances 0.000 claims description 43
- 238000003672 processing method Methods 0.000 claims description 41
- 229910052731 fluorine Inorganic materials 0.000 claims description 40
- 239000011737 fluorine Substances 0.000 claims description 38
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 35
- 239000001257 hydrogen Substances 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 abstract description 36
- 238000005530 etching Methods 0.000 abstract description 31
- 238000004380 ashing Methods 0.000 abstract description 21
- 238000009413 insulation Methods 0.000 abstract 4
- 239000011149 active material Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 56
- 238000004140 cleaning Methods 0.000 description 9
- 150000002431 hydrogen Chemical class 0.000 description 7
- 238000005299 abrasion Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 101100316860 Autographa californica nuclear polyhedrosis virus DA18 gene Proteins 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 101150042515 DA26 gene Proteins 0.000 description 1
- 101000650817 Homo sapiens Semaphorin-4D Proteins 0.000 description 1
- 102100027744 Semaphorin-4D Human genes 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002221 fluorine Chemical class 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体装置の製造工程
でなされるプラズマ処理方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing method performed in a semiconductor device manufacturing process.
【０００２】[0002]
【従来の技術】被処理体中の層間絶縁膜、例えば有機絶
縁膜をマスクのパターンを介してエッチングし、その後
にマスクを除去する従来のプラズマ処理方法としては、
処理容器内で有機絶縁膜をフロロカーボン等のＣＦ系の
ガスのプラズマを用いて有機絶縁膜下のＳｉＮ膜等のバ
リア層が露出するまで有機絶縁膜をエッチングし、その
後引き続いて同一処理容器内で酸素ガス等のプラズマを
用いてマスクを除去（アッシング）する方法が一般的で
あった。2. Description of the Related Art As a conventional plasma processing method of etching an interlayer insulating film in an object to be processed, for example, an organic insulating film through a pattern of a mask, and then removing the mask,
The organic insulating film is etched in the processing container by using plasma of CF type gas such as fluorocarbon until the barrier layer such as SiN film under the organic insulating film is exposed, and then in the same processing container. A general method is to remove (ash) the mask using plasma such as oxygen gas.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、従来の
プラズマ処理方法の場合には、ＣＦ系のガスで有機絶縁
膜をエッチングすると、処理容器内の物、例えば、処理
容器の内壁や処理容器内にあるフォーカスリング、シー
ルドリング、バッフル板等の部品にＣＦ系の副生成物が
付着する。そして、その後の酸素ガス等を用いたプラズ
マアッシングにより処理容器内の部品に付着したＣＦ系
の副生成物からフッ素ラジカル（Ｆ＊）等のフッ素の反
応活性種が生成し、この反応活性種が被処理体中の露出
したＳｉＮ膜等のバリア層に作用してバリア層を削って
しまうため、バリア層としての機能が失われ、デバイス
性能を劣化させる問題があった。However, in the case of the conventional plasma processing method, when the organic insulating film is etched with a CF-based gas, the substance inside the processing container, for example, the inner wall of the processing container or the processing container is etched. CF-based byproducts adhere to parts such as a focus ring, a shield ring, and a baffle plate. Then, by plasma ashing using oxygen gas or the like thereafter, a fluorine-based reactive product such as a fluorine radical (F * ) is generated from a CF-based byproduct adhering to a component in the processing container, and this reactive active species is generated. Since the barrier layer such as an exposed SiN film in the object to be processed acts to scrape the barrier layer, the function as the barrier layer is lost and the device performance is deteriorated.
【０００４】本発明は、上記課題を解決するためになさ
れたもので、フッ素の反応活性種の生成を防ぎ、バリア
層の削れを抑えながらマスクを除去するプラズマ処理方
法を提供することを目的としている。また、バリア層に
対するマスクの選択性を維持しつつ、マスクを除去する
プラズマ処理方法を併せて提供することを目的としてい
る。The present invention has been made to solve the above problems, and an object of the present invention is to provide a plasma processing method for removing the mask while preventing the formation of reactive reactive species of fluorine and suppressing the abrasion of the barrier layer. There is. Another object is to provide a plasma processing method for removing the mask while maintaining the selectivity of the mask with respect to the barrier layer.
【０００５】[0005]
【課題を解決するための手段】本発明の請求項１に記載
のプラズマ処理方法は、処理容器内に導入したフッ素を
含むガスをプラズマ化し、被処理体中のシリコン（Ｓ
ｉ）含有膜上にある膜を、この膜上にあるマスクのパタ
ーンを介してエッチングして上記シリコン含有膜を露出
させる工程と、上記処理容器内の物に付着したフッ素
（Ｆ）を含有する副生成物を除去する工程と、上記処理
容器内で上記マスクを除去する工程とを有することを特
徴とするものである。In the plasma processing method according to the first aspect of the present invention, the gas containing fluorine introduced into the processing container is turned into plasma and silicon (S
i) a step of etching the film on the contained film through the pattern of the mask on the film to expose the silicon-containing film, and containing fluorine (F) attached to the substance in the processing container. It has a step of removing a by-product and a step of removing the mask in the processing container.
【０００６】また、本発明の請求項２に記載のプラズマ
処理方法は、処理容器内に導入したフッ素を含むガスを
プラズマ化し、被処理体中のシリコン（Ｓｉ）含有膜
を、この膜上にあるマスクのパターンを介して途中まで
エッチングする工程と、上記処理容器内の物に付着した
フッ素（Ｆ）を含有する副生成物を除去する工程と、上
記処理容器内で上記マスクを除去する工程とを有するこ
とを特徴とするものである。Further, in the plasma processing method according to claim 2 of the present invention, the gas containing fluorine introduced into the processing container is turned into plasma, and the silicon (Si) -containing film in the object to be processed is formed on this film. A step of partially etching through a pattern of a mask, a step of removing a by-product containing fluorine (F) attached to an object in the processing container, and a step of removing the mask in the processing container It is characterized by having.
【０００７】また、本発明の請求項３に記載のプラズマ
処理方法は、請求項１または請求項２に記載の発明にお
いて、上記処理容器内の物に付着したフッ素（Ｆ）を含
有する副生成物を除去する工程では、上記処理容器内に
導入した酸素（Ｏ２）を含むガスをプラズマ化して上記
副生成物を除去することを特徴とするものである。The plasma processing method according to claim 3 of the present invention is the plasma processing method according to claim 1 or 2, wherein the by-product containing fluorine (F) attached to the substance in the processing container. The step of removing the substance is characterized in that the gas containing oxygen (O 2 ) introduced into the processing container is turned into plasma to remove the by-product.
【０００８】また、本発明の請求項４に記載のプラズマ
処理方法は、請求項１〜請求項３のいずれか１項に記載
の発明において、上記マスクを除去する工程では、窒素
（Ｎ ２）と水素（Ｈ２）とを含むガスをプラズマ化して
上記マスクを除去することを特徴とするものである。The plasma according to claim 4 of the present invention
The processing method is described in any one of claims 1 to 3.
In the invention of claim 1, in the step of removing the mask, nitrogen is used.
(N Two) And hydrogen (HTwo) And a gas containing
The above-mentioned mask is removed.
【０００９】また、本発明の請求項５に記載のプラズマ
処理方法は、処理容器内に導入したフッ素（Ｆ）を含む
ガスをプラズマ化し、被処理体中のシリコン（Ｓｉ）含
有膜上にある膜を、この膜上にあるマスクのパターンを
介してエッチングし、このシリコン含有膜を露出する工
程と、上記処理容器とは別の処理容器の中で上記マスク
を除去する工程とを有することを特徴とするものであ
る。Further, in the plasma processing method according to the fifth aspect of the present invention, the gas containing fluorine (F) introduced into the processing container is turned into plasma and is present on the silicon (Si) -containing film in the object to be processed. Etching the film through a pattern of a mask on the film to expose the silicon-containing film; and removing the mask in a processing container different from the processing container. It is a feature.
【００１０】また、本発明の請求項６に記載のプラズマ
処理方法は、処理容器内に導入したフッ素（Ｆ）を含む
ガスをプラズマ化し、被処理体中のシリコン（Ｓｉ）含
有膜を、この膜上にあるマスクのパターンを介して途中
までエッチングする工程と、上記処理容器とは別の処理
容器の中で上記マスクを除去する工程とを有することを
特徴とするものである。Further, in the plasma processing method according to claim 6 of the present invention, the gas containing fluorine (F) introduced into the processing container is turned into plasma, and the silicon (Si) -containing film in the object is The method is characterized by including a step of partially etching through a pattern of a mask on the film and a step of removing the mask in a processing container different from the processing container.
【００１１】また、本発明の請求項７に記載のプラズマ
処理方法は、処理容器内に導入したフッ素（Ｆ）を含む
ガスをプラズマ化し、被処理体中のシリコン（Ｓｉ）含
有膜上にある膜を、この膜上にあるマスクのパターンを
介してエッチングし、このシリコン含有膜を露出させる
工程と、上記処理容器内で窒素（Ｎ２）を含むガスをプ
ラズマ化して上記マスクを除去する工程とを有すること
を特徴とするものである。Further, in the plasma processing method according to claim 7 of the present invention, the gas containing fluorine (F) introduced into the processing container is turned into plasma and is present on the silicon (Si) -containing film in the object to be processed. Etching the film through a pattern of a mask on the film to expose the silicon-containing film; and removing the mask by plasmaizing a gas containing nitrogen (N 2 ) in the processing container. It is characterized by having.
【００１２】また、本発明の請求項８に記載のプラズマ
処理方法は、処理容器内に導入したフッ素（Ｆ）を含む
ガスをプラズマ化し、被処理体中のシリコン（Ｓｉ）含
有膜を、この膜上にあるマスクのパターンを介して途中
までエッチングする工程と、上記処理容器内で窒素（Ｎ
２）を含むガスをプラズマ化して上記マスクを除去する
工程とを有することを特徴とするものである。Further, in the plasma processing method according to claim 8 of the present invention, the gas containing fluorine (F) introduced into the processing container is turned into plasma, and the silicon (Si) -containing film in the object is The process of etching halfway through the pattern of the mask on the film, and nitrogen (N
2 ) The plasma containing gas is removed to remove the mask.
【００１３】また、本発明の請求項９に記載のプラズマ
処理方法は、請求項７または請求項８に記載の発明にお
いて、窒素（Ｎ２）を含むガスは、水素（Ｈ２）を含む
ことを特徴とするものである。Further, in the plasma processing method according to claim 9 of the present invention, in the invention according to claim 7 or 8, the gas containing nitrogen (N 2 ) contains hydrogen (H 2 ). It is characterized by.
【００１４】また、本発明の請求項１０に記載のプラズ
マ処理方法は、請求項９に記載の発明において、窒素
（Ｎ２）の流量と水素（Ｈ２）の流量との和に対する水
素（Ｈ ２）の流量は、０％を超え、２０％以下であるこ
とを特徴とするものである。The plasm according to claim 10 of the present invention
In the invention according to claim 9, the processing method is the nitrogen treatment.
(NTwo) Flow rate and hydrogen (HTwo) Flow rate and water
Elementary (H Two) Flow rate must be above 0% and below 20%.
And are characterized by.
【００１５】また、本発明の請求項１１に記載のプラズ
マ処理方法は、処理容器内に導入したフッ素（Ｆ）を含
むガスをプラズマ化し、被処理体中のシリコン（Ｓｉ）
含有膜上にある膜を、この膜上にあるマスクのパターン
を介してエッチングし、このシリコン含有膜を露出させ
る工程と、上記処理容器内でアンモニア（ＮＨ３）を含
むガスをプラズマ化して上記マスクを除去する工程とを
有することを特徴とするものである。Further, in the plasma processing method according to claim 11 of the present invention, the gas containing fluorine (F) introduced into the processing container is turned into plasma, and silicon (Si) in the object to be processed is converted into plasma.
The step of etching the film on the contained film through the pattern of the mask on the film to expose the silicon-containing film, and plasmaizing a gas containing ammonia (NH 3 ) in the processing container And a step of removing the mask.
【００１６】また、本発明の請求項１２に記載のプラズ
マ処理方法は、処理容器内に導入したフッ素（Ｆ）を含
むガスをプラズマ化し、被処理体中のシリコン（Ｓｉ）
含有膜を、この膜上にあるマスクのパターンを介して途
中までエッチングする工程と、上記処理容器内でアンモ
ニア（ＮＨ３）を含むガスをプラズマ化して上記マスク
を除去する工程とを有することを特徴とするものであ
る。According to the twelfth aspect of the plasma processing method of the present invention, the gas containing fluorine (F) introduced into the processing container is turned into plasma, and silicon (Si) in the object to be processed is converted into plasma.
And a step of partially etching the contained film through a pattern of a mask on the film, and a step of plasmaizing a gas containing ammonia (NH 3 ) in the processing container to remove the mask. It is a feature.
【００１７】また、本発明の請求項１３に記載のプラズ
マ処理方法は、請求項１〜請求項１２のいずれか１項に
記載の発明において、上記シリコン（Ｓｉ）含有膜は、
窒化シリコン、酸化シリコン、炭化シリコンの少なくと
も１つを有する膜であることを特徴とするものである。A plasma processing method according to a thirteenth aspect of the present invention is the method according to any one of the first to twelfth aspects, wherein the silicon (Si) -containing film is:
The film is characterized by being a film containing at least one of silicon nitride, silicon oxide, and silicon carbide.
【００１８】また、本発明の請求項１４に記載のプラズ
マ処理方法は、請求項１〜請求項８のいずれか１項に記
載の発明において、上記フッ素（Ｆ）を含むガスは、少
なくともＣＦ４、ＣＨＦ３、ＣＨ２Ｆ２、ＣＨ３Ｆ、Ｃ
２Ｆ４、Ｃ２Ｆ６、Ｃ３Ｆ６、Ｃ３Ｆ８、Ｃ４Ｆ６、Ｃ
４Ｆ８、Ｃ８Ｆ８のいずれか１つ以上を含むガスである
ことを特徴とするものである。The plasma processing method according to claim 14 of the present invention is the plasma processing method according to any one of claims 1 to 8, wherein the gas containing fluorine (F) is at least CF 4. , CHF 3 , CH 2 F 2 , CH 3 F, C
2 F 4 , C 2 F 6 , C 3 F 6 , C 3 F 8 , C 4 F 6 , C
It is characterized by being a gas containing any one or more of 4 F 8 and C 8 F 8 .
【００１９】また、本発明の請求項１５に記載のプラズ
マ処理方法は、請求項１〜請求項１４のいずれか１項に
記載の発明において、上記マスクは、フォトレジストで
あることを特徴とするものである。A plasma processing method according to a fifteenth aspect of the present invention is characterized in that, in the invention according to any one of the first to fourteenth aspects, the mask is a photoresist. It is a thing.
【００２０】[0020]
【発明の実施の形態】以下、図１〜図３に示す実施形態
に基づいて本発明について説明する。まず、本発明のプ
ラズマ処理方法に好適に用いられるプラズマ処理装置に
ついて説明する。本実施形態に用いられるプラズマ処理
装置１０は、例えば図１に示すように、金属（例えば表
面が酸化処理されたアルミニウム）により形成され且つ
接地された処理容器１１と、この処理容器１１内の底面
中央に絶縁体１２を介して配設された導電体からなるサ
セプタ１３と、このサセプタ１３の上方に形成され且つ
処理ガスを供給するシャワーヘッド１４を備えている。
サセプタ１３にはマッチャ１５を介してプラズマ生成用
の高周波電源１６が接続され、この高周波電源１６から
サセプタ１３に対して周波数１３．５６ＭＨｚの高周波
電力を印加する。サセプタ１３上には静電チャック１７
が配置され、この静電チャック１７内に介在する電極１
７Ａには直流電源１８が接続されている。また、処理容
器１１の外周にはダイポールリングマグネット（ＤＲ
Ｍ）１９が回転可能に配置されている。また、処理容器
１１の頂面には処理ガス源（図示せず）が接続されたガ
ス導入部１１Ａが形成され、このガス導入部１１Ａから
導入された処理ガスをシャワーヘッド１４を介して被処
理体（例えば、ウエハ）Ｗ全面に均一に供給するように
してある。処理容器１１の周壁面の下部には排気ポンプ
（図示せず）に接続された排気口１１Ｂが形成され、こ
の排気口１１Ｂから排気ポンプを介して処理容器１１内
を所定の圧力まで下げるようにしてある。BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described below based on the embodiments shown in FIGS. First, a plasma processing apparatus preferably used in the plasma processing method of the present invention will be described. The plasma processing apparatus 10 used in the present embodiment is, for example, as shown in FIG. 1, a processing container 11 formed of metal (for example, aluminum whose surface is oxidized) and grounded, and a bottom surface in the processing container 11. A susceptor 13 made of a conductor is disposed in the center with an insulator 12 in between, and a shower head 14 formed above the susceptor 13 and supplying a processing gas.
A high frequency power supply 16 for plasma generation is connected to the susceptor 13 via a matcher 15, and a high frequency power having a frequency of 13.56 MHz is applied from the high frequency power supply 16 to the susceptor 13. An electrostatic chuck 17 is provided on the susceptor 13.
And the electrode 1 interposed in the electrostatic chuck 17
A DC power source 18 is connected to 7A. Further, a dipole ring magnet (DR
M) 19 is rotatably arranged. Further, a gas introducing portion 11A connected to a processing gas source (not shown) is formed on the top surface of the processing container 11, and the processing gas introduced from the gas introducing portion 11A is processed via the shower head 14. The whole body (for example, wafer) W is supplied uniformly. An exhaust port 11B connected to an exhaust pump (not shown) is formed in the lower part of the peripheral wall surface of the processing container 11, and the inside of the processing container 11 is lowered to a predetermined pressure from the exhaust port 11B via the exhaust pump. There is.
【００２１】次に、プラズマ処理装置１０を用いた本発
明のプラズマ処理方法の一実施形態について説明する。
まず、図示しない搬入口から処理容器１１内にウエハＷ
を搬入し、サセプタ１３上の静電チャック３０上に載置
する。次いで、処理容器１１内を排気しながら処理ガス
を導入し、ＤＲＭ１９を回転させると共にサセプタ１３
に高周波電力を印加する。高周波電力を印加すると同時
かその前後に静電チャック１７にも直流電力を印加し、
静電チャック１７上でウエハＷを吸着、固定する。サセ
プタ１３に高周波電力を印加したことと相俟ってＤＲＭ
１９からの回転磁界の印加によって処理ガスをプラズマ
化し、ウエハＷ中のプラズマ処理対象部分を以下のよう
にしてプラズマ処理する。Next, an embodiment of the plasma processing method of the present invention using the plasma processing apparatus 10 will be described.
First, the wafer W is loaded into the processing container 11 from a carry-in port (not shown)
Is loaded and placed on the electrostatic chuck 30 on the susceptor 13. Next, while exhausting the inside of the processing container 11, the processing gas is introduced, the DRM 19 is rotated, and the susceptor 13 is rotated.
Apply high frequency power to the. DC power is also applied to the electrostatic chuck 17 at the same time or before and after applying high frequency power,
The wafer W is attracted and fixed on the electrostatic chuck 17. Combined with applying high-frequency power to the susceptor 13, DRM
By applying the rotating magnetic field from 19, the processing gas is made into plasma, and the plasma processing target portion in the wafer W is plasma-processed as follows.
【００２２】ここでウエハＷのプラズマ処理対象部の構
造について図２を参照しながら説明する。例えば図２の
（ａ）に示すように、ウエハＷには下から上に向かって
メタル配線層２１、バリア層（ここでは、シリコン含有
膜）２２、絶縁膜層２３、マスク２４が形成され、ま
た、マスク２４には所定のパターンで開口部２４Ａが形
成されている。そして、プラズマ処理対象部にはマスク
２４を介してプラズマ処理が施される。プラズマ処理時
には例えば同図の（ｂ）に示すようにフロロカーボン等
を含むガスを用いてマスク２４の開口部２４Ａから絶縁
膜層２３をプラズマエッチングする。その後、酸素（Ｏ
２）を含むガスのプラズマを用いて処理容器１１内の部
品に付着したフッ素を含有する副生成物を除去する。引
き続き、処理容器１１内に導入した窒素（Ｎ２）と水素
（Ｈ２）とを含むガスのプラズマを用いて同図の（ｃ）
に示すようにマスク２４を除去（アッシング）する。The structure of the plasma processing target portion of the wafer W will be described with reference to FIG. For example, as shown in FIG. 2A, a metal wiring layer 21, a barrier layer (here, a silicon-containing film) 22, an insulating film layer 23, and a mask 24 are formed on the wafer W from bottom to top, The mask 24 has openings 24A formed in a predetermined pattern. Then, the plasma processing target portion is subjected to plasma processing through the mask 24. During the plasma processing, the insulating film layer 23 is plasma-etched from the opening 24A of the mask 24 using a gas containing fluorocarbon as shown in FIG. After that, oxygen (O
2 ) is used to remove the fluorine-containing by-product adhering to the components in the processing container 11 by using plasma of a gas containing the same. Then, using a plasma of a gas containing nitrogen (N 2 ) and hydrogen (H 2 ) introduced into the processing container 11, (c) in FIG.
The mask 24 is removed (ashing) as shown in FIG.
【００２３】このように、マスク２４を除去する工程の
前に、処理容器１１内の部品に付着したフッ素を含有す
る副生成物を除去する工程を入れたため、マスク２４を
除去する工程において、バリア層２２に作用するフッ素
活性種が生成されなくなり、バリア層２２の削れを抑制
できる。また、窒素（Ｎ２）と水素（Ｈ２）とを含むガ
スのプラズマによりマスク２４を除去すれば、シリコン
含有膜であるバリア層２２上にある絶縁膜層２３の側面
の削れを抑制することができる。また、窒素（Ｎ２）
や、窒素（Ｎ２）に少量の水素（Ｈ２）を添加したガス
のプラズマを用いてマスク２４を除去することにより後
述のようにフッ素を含有する副生成物を除去する工程を
省略することができる。As described above, since the step of removing the fluorine-containing by-product adhering to the components in the processing container 11 is included before the step of removing the mask 24, the barrier is removed in the step of removing the mask 24. The activated fluorine species that act on the layer 22 are not generated, and the abrasion of the barrier layer 22 can be suppressed. Further, if the mask 24 is removed by plasma of a gas containing nitrogen (N 2 ) and hydrogen (H 2 ), abrasion of the side surface of the insulating film layer 23 on the barrier layer 22 which is a silicon-containing film is suppressed. You can Also, nitrogen (N 2 )
Alternatively, by removing the mask 24 using plasma of a gas in which a small amount of hydrogen (H 2 ) is added to nitrogen (N 2 ), a step of removing a by-product containing fluorine as described later is omitted. You can
【００２４】また、エッチングを行った処理容器とは別
の処理容器中に移送し、この別の処理容器内でマスク２
４を除去しても良い。このようにバリア層２２上の絶縁
膜層２３のエッチングと、マスク２４の除去をそれぞれ
別の処理容器の中で行うことにより、バリア層２２上の
絶縁膜層２３のエッチング工程で処理容器１１内の部品
に付着したフッ素（Ｆ）を含有する副生成物がない状
態、即ち、露出したバリア層２２に作用するフッ素活性
種が生成しない状態でマスク２４を除去できるため、バ
リア層２２の削れを抑制できる。Further, the mask 2 is transferred into a processing container different from the etching processing container, and the mask 2 is placed in the processing container.
4 may be removed. In this way, the etching of the insulating film layer 23 on the barrier layer 22 and the removal of the mask 24 are performed in different processing containers, respectively. Since the mask 24 can be removed in a state where there is no by-product containing fluorine (F) adhering to the component, that is, in a state in which fluorine active species that act on the exposed barrier layer 22 are not generated, the barrier layer 22 is scraped off. Can be suppressed.
【００２５】また、上述のように窒素（Ｎ２）を含むガ
スを用いることにより、処理容器１１内の部品に付着し
たフッ素（Ｆ）を含有する副生成物があっても、バリア
層２２（シリコン含有膜）に対するマスクの選択比（マ
スクのエッチングレート／シリコン含有膜のエッチング
レート）が約３０と、かなり高い値の選択比を維持しつ
つマスク２４を除去できる。尚、この窒素（Ｎ２）を含
むガスには、少量の水素ガスを添加しても良い。水素ガ
スの添加により、マスク２４のアッシングレートを上げ
ることができる。この場合、窒素ガスの流量と水素ガス
の流量の和に対する水素ガスの流量は、好ましくは、０
％を超え２０％以下、より好ましくは、１％以上２０％
以下、更に好ましくは１％以上１０％以下である。この
領域での水素ガスの添加により、シリコン含有膜（バリ
ア層２２）に対するマスク２４の選択比をある程度高く
維持したまま、マスク２４のアッシングレートをも高く
（約１８０ｎｍ／分以上）できる。また、これらのマス
クを除去するガスには、更に、アルゴン、ヘリウム等の
不活性ガスを添加しても良い。Further, by using the gas containing nitrogen (N 2 ) as described above, even if there is a by-product containing fluorine (F) attached to the components in the processing container 11, the barrier layer 22 ( The mask 24 can be removed while maintaining the selectivity ratio of the mask to the silicon-containing film) (etching rate of the mask / etching rate of the silicon-containing film) of about 30, which is a considerably high value. A small amount of hydrogen gas may be added to the gas containing nitrogen (N 2 ). The ashing rate of the mask 24 can be increased by adding hydrogen gas. In this case, the flow rate of hydrogen gas relative to the sum of the flow rate of nitrogen gas and the flow rate of hydrogen gas is preferably 0.
% To 20% or less, more preferably 1% to 20%
Hereafter, it is more preferably 1% or more and 10% or less. By adding hydrogen gas in this region, the ashing rate of the mask 24 can be increased (about 180 nm / min or more) while maintaining the selectivity of the mask 24 with respect to the silicon-containing film (barrier layer 22) high to some extent. Further, an inert gas such as argon or helium may be added to the gas for removing these masks.
【００２６】シリコン含有膜（バリア層２２）としては
窒化シリコン、酸化シリコン、炭化シリコンの少なくと
もいずれか１つを有する膜であることが好ましい。ま
た、シリコン含有膜上の膜としてはデバイス性能を良く
するために比誘電率が低い絶縁膜であることが好まし
い。比誘電率が低い絶縁膜としては、例えば、ＭＳＱ、
ポーラスＭＳＱ（ＪＳＲ社の商品名：ＬＫＤ）、ポーラ
スシリカ、ＦＳＧ、ＣＶＤ−ＳｉＯＣ（商品名：ＣＯＲ
ＡＬ、Ｂｌａｃｋ Ｄｉａｍｏｎｄ等）が挙げられる。
勿論、ＳｉＯ２も用いることができる。The silicon-containing film (barrier layer 22) is preferably a film containing at least one of silicon nitride, silicon oxide and silicon carbide. The film on the silicon-containing film is preferably an insulating film having a low relative dielectric constant in order to improve device performance. As the insulating film having a low relative dielectric constant, for example, MSQ,
Porous MSQ (trade name of JSR: LKD), porous silica, FSG, CVD-SiOC (product name: COR
AL, Black Diamond, etc.).
Of course, SiO2 can also be used.
【００２７】また、シリコン含有膜上の膜をエッチング
するフッ素を含むガスとしては、例えば、ＣＦ４、Ｃ２
Ｆ４、Ｃ２Ｆ６、Ｃ３Ｆ６、Ｃ３Ｆ８、Ｃ４Ｆ６、Ｃ４
Ｆ８、Ｃ８Ｆ８等のフロロカーボンや、ＣＨＦ３、ＣＨ
２Ｆ２、ＣＨ３Ｆ等のハイドロフロロカーボンの少なく
ともいずれか１つ以上を含むガスを用いることができ
る。また、これ以外にも、メタン（ＣＨ４）、四塩化炭
素（ＣＣｌ４）等やフッ素（Ｆ２）、三フッ化塩素（Ｃ
ｌＦ３）等との混合ガスを用いることができる。また、
これらに窒素（Ｎ２）、酸素（Ｏ２）、一酸化炭素（Ｃ
Ｏ）、アルゴン（Ａｒ）、ヘリウム（Ｈｅ）等を添加し
ても良い。これらの発明で使用されるマスクとしては、
フォトレジストが好ましく、このフォトレジストを除去
するには、上記の窒素を含むガス、窒素と水素を含むガ
スのほか、酸素（Ｏ２）を含むガスのプラズマが使用で
きる。Further, as the gas containing fluorine for etching the film on the silicon-containing film, for example, CF 4 and C 2 are used.
F 4, C 2 F 6, C 3 F 6, C 3 F 8, C 4 F 6, C 4
Fluorocarbons such as F 8 , C 8 F 8 and CHF 3 , CH
A gas containing at least one of hydrofluorocarbons such as 2 F 2 and CH 3 F can be used. In addition to this, methane (CH 4 ), carbon tetrachloride (CCl 4 ), etc., fluorine (F 2 ), chlorine trifluoride (C
A mixed gas of 1F 3 ) or the like can be used. Also,
Nitrogen (N 2 ), oxygen (O 2 ), carbon monoxide (C
O), argon (Ar), helium (He) or the like may be added. As the mask used in these inventions,
Photoresist is preferable, and in order to remove this photoresist, plasma of a gas containing oxygen (O 2 ) can be used in addition to the above-mentioned gas containing nitrogen, gas containing nitrogen and hydrogen.
【００２８】また、本発明は例えば図３に示すデュアル
ダマシン構造の溝を形成する場合にも適用することがで
きる。例えば図３の（ａ）に示すように、ウエハＷには
下から上に向かってメタル配線層３１、下地層（ここで
は、例えばＳｉＮ膜）３２、シリコン含有膜層（ここで
は、例えばＳｉＯ２膜層）３３、マスク３４が形成さ
れ、また、マスク３４には所定のパターンで開口部３４
Ａが形成されている。そして、マスク３４の開口部３４
Ａから下地層３２が露出するまでシリコン含有膜層３３
をプラズマエッチングしてホール３３Ａを形成する。エ
ッチングガスとしては、例えばＣ４Ｆ８（またはＣ５Ｆ
８、Ｃ４Ｆ６）とＣＯとＯ２とＡｒの混合ガス等を使用
することができる。シリコン含有膜層が有機系の酸化シ
リコン膜の場合には、更にＮ２を加えると良い。このエ
ッチングに続いて、例えば酸素ガスのプラズマを用いて
処理容器１１内の部品に付着したフッ素を含有する副生
成物を除去する。引き続き、処理容器１１内に導入した
窒素（Ｎ２）と水素（Ｈ２）とを含む混合ガスのプラズ
マを用いてアッシングして同図の（ｂ）に示すようにマ
スク３４を除去する。The present invention can also be applied to the case of forming a groove having a dual damascene structure shown in FIG. 3, for example. For example, as shown in FIG. 3A, a metal wiring layer 31, a base layer (here, for example, SiN film) 32, a silicon-containing film layer (here, for example, SiO 2 ) are formed on the wafer W from bottom to top. A film layer) 33 and a mask 34 are formed, and the opening 34 is formed in the mask 34 in a predetermined pattern.
A is formed. Then, the opening 34 of the mask 34
Silicon-containing film layer 33 until the underlying layer 32 is exposed from A
Plasma etching is performed to form holes 33A. As the etching gas, for example, C 4 F 8 (or C 5 F
8 , C 4 F 6 ), a mixed gas of CO, O 2 and Ar, or the like can be used. When the silicon-containing film layer is an organic silicon oxide film, N 2 may be further added. Following this etching, fluorine-containing by-products adhering to the components in the processing container 11 are removed using, for example, plasma of oxygen gas. Subsequently, ashing is performed using plasma of a mixed gas containing nitrogen (N 2 ) and hydrogen (H 2 ) introduced into the processing container 11 to remove the mask 34 as shown in FIG.
【００２９】次いで、フォトレジストを塗布し、図３の
（ｂ）のホール３３Ａより大きいパターン開口部３５Ａ
を有するマスク３５を形成した後、同図の（ａ）の場合
と同一のエッチングガスを用いてマスク３５の開口部３
５Ａからシリコン含有膜層３３の途中までエッチングし
て溝３３Ｂを形成する（同図の（ｃ）参照）。その後、
例えば酸素ガスのプラズマを用いて処理容器１１内の部
品に付着したフッ素を含有する副生成物を除去する。引
き続き、同図の（ａ）のマスク３４を除去する場合と同
一のアッシングガスのプラズマを用いてアッシングして
同図の（ｄ）に示すようにマスク３５を除去する。Next, a photoresist is applied to form a pattern opening 35A larger than the hole 33A shown in FIG. 3B.
After forming the mask 35 having the above-mentioned structure, the opening 3 of the mask 35 is formed by using the same etching gas as in the case of FIG.
5A to the middle of the silicon-containing film layer 33 is etched to form a groove 33B (see (c) in the same figure). afterwards,
For example, plasma of oxygen gas is used to remove fluorine-containing by-products adhering to the components in the processing container 11. Successively, ashing is performed using the same plasma of ashing gas as in the case of removing the mask 34 of (a) in the same figure, and the mask 35 is removed as shown in (d) of the same figure.
【００３０】更に、シリコン含有膜層３３をマスクとし
て用いて、下地層３２をＣＦ４、ＣＨＦ３、ＣＨ２Ｆ２
の少なくとも一つとＯ２とＮ２とＡｒ２との混合ガスで
エッチングしても良い。この際、残存している下地層
（ＳｉＮ膜層）３２は本発明の上述した効果により殆ど
均一な膜厚になっているため、オーバーエッチングの時
間が少なくて済み、下地のメタル層３１の減少を最小限
に抑えられる。Further, by using the silicon-containing film layer 33 as a mask, the underlayer 32 is made of CF 4 , CHF 3 , and CH 2 F 2.
Of may be etched with a mixed gas of at least one O 2 and N 2 and Ar 2. At this time, since the remaining underlayer (SiN film layer) 32 has a substantially uniform film thickness due to the above-described effects of the present invention, the overetching time is short and the underlayer metal layer 31 is reduced. Can be minimized.
【００３１】また、図４に示すように、本発明はデュア
ルダマシン構造において先に溝を形成する場合にも適用
することができる。尚、ウエハＷのプラズマ処理対象部
は図３の場合と同様である。即ち、所定の大きさの開口
部４４Ａを有するマスク４４をフォトレジストによって
形成した後、図４の（ａ）に示すようにマスク４４の開
口部４４Ａからシリコン含有膜層４３を途中までエッチ
ングして溝４３Ａを形成する。続いて、マスク４４を上
述の場合と同様の手法でアッシングして除去した後、再
度フォトレジストを塗布し、図４の（ｂ）の溝４４Ａの
幅より小径の開口部４５Ａを有するマスク４５を形成す
る。次いで、マスク４５の開口部４５Ａから下地層（Ｓ
ｉＮ膜層）４２が露出するまでシリコン含有膜層４３を
エッチングしてホール４３Ｂを形成する（同図の（ｃ）
参照）。その後、上述の場合と同様にアッシングしてマ
スク４５を除去する（同図の（ｄ）参照）。Further, as shown in FIG. 4, the present invention can be applied to the case where the groove is first formed in the dual damascene structure. The plasma processing target portion of the wafer W is the same as in the case of FIG. That is, after the mask 44 having the opening 44A of a predetermined size is formed by the photoresist, the silicon-containing film layer 43 is partially etched from the opening 44A of the mask 44 as shown in FIG. The groove 43A is formed. Subsequently, the mask 44 is removed by ashing in the same manner as described above, and then photoresist is applied again to form a mask 45 having an opening 45A having a diameter smaller than the width of the groove 44A in FIG. 4B. Form. Next, the underlying layer (S
The silicon-containing film layer 43 is etched until the iN film layer) 42 is exposed to form a hole 43B ((c) in the figure).
reference). After that, the mask 45 is removed by ashing in the same manner as described above (see (d) in the figure).
【００３２】[0032]
【実施例】以下、本発明の実施例を具体的に説明する。
実施例１
本実施例では図１に示すプラズマ処理装置を用いてバリ
ア層２２の種類を変え、下記の諸条件でプラズマ処理、
即ち、絶縁膜層２３のエッチング、フッ素を含有する副
生成物の除去（クリーニング）及びマスク２４のアッシ
ングをそれぞれ行った。そして、クリーニング工程の有
無による各バリア層２２のエッチングレートへの影響を
観た。
（１）エッチング工程の処理条件
ＤＲＭの回転速度：２０ｒｐｍ
サセプタに印加する高周波電源の周波数：１３．５６Ｍ
Ｈｚ
サセプタに印加する高周波電力：１７００Ｗ
サセプタ温度：４０℃
処理容器内圧力：１５０ｍＴｏｒｒ
エッチングガスの流量：Ｃ４Ｆ８＝６ｓｃｃｍ、Ａｒ＝
１０００ｓｃｃｍ、Ｎ２＝１５０ｓｃｃｍEXAMPLES Examples of the present invention will be specifically described below. Example 1 In this example, the plasma treatment apparatus shown in FIG. 1 was used to change the type of the barrier layer 22, and plasma treatment was performed under the following conditions.
That is, the insulating film layer 23 was etched, fluorine-containing by-products were removed (cleaning), and the mask 24 was ashed. Then, the influence of the presence or absence of the cleaning step on the etching rate of each barrier layer 22 was observed. (1) Etching process conditions DRM rotation speed: 20 rpm Frequency of high frequency power source applied to susceptor: 13.56 M
Hz High frequency power applied to susceptor: 1700 W Susceptor temperature: 40 ° C. Processing vessel pressure: 150 mTorr Etching gas flow rate: C 4 F 8 = 6 sccm, Ar =
1000 sccm, N 2 = 150 sccm
【００３３】（２）クリーニング工程の処理条件
ＤＲＭの回転速度：２０ｒｐｍ
サセプタに印加する高周波電源の周波数：１３．５６Ｍ
Ｈｚ
サセプタに印加する高周波電力：２０００Ｗ
サセプタ温度：４０℃
処理容器内圧力：１５０ｍＴｏｒｒ
クリーニングガスの流量：Ｏ２＝５００ｓｃｃｍ(2) Processing condition of cleaning step Rotation speed of DRM: 20 rpm Frequency of high frequency power source applied to susceptor: 13.56 M
Hz High frequency power applied to the susceptor: 2000 W Susceptor temperature: 40 ° C. Processing vessel internal pressure: 150 mTorr Cleaning gas flow rate: O 2 = 500 sccm
【００３４】（３）アッシング工程の処理条件
ＤＲＭの回転速度：２０ｒｐｍ
サセプタに印加する高周波電源の周波数：１３．５６Ｍ
Ｈｚ
サセプタに印加する高周波電力：５００Ｗ
サセプタ温度：５０℃
処理容器内圧力：５０ｍＴｏｒｒ
処理ガスの流量：Ｎ２＝３００ｓｃｃｍ、Ｈ２＝１００
ｓｃｃｍ(3) Processing conditions of ashing process DRM rotation speed: 20 rpm Frequency of high frequency power source applied to susceptor: 13.56 M
Hz High frequency power applied to the susceptor: 500 W Susceptor temperature: 50 ° C. Processing vessel pressure: 50 mTorr Processing gas flow rate: N 2 = 300 sccm, H 2 = 100
sccm
【００３５】アッシング時のマスク２４のエッチングレ
ートと、ＳｉＮ膜、ＳｉＣ膜、ＳｉＯ２膜の各エッチン
グレートとを、クリーニング工程が有る場合と無い場合
について評価した結果、下記表１に示す結果が得られ
た。The etching rate of the mask 24 at the time of ashing and the etching rates of the SiN film, the SiC film and the SiO 2 film were evaluated with and without the cleaning step, and the results shown in Table 1 below were obtained. Was given.
【００３６】[0036]
【表１】 [Table 1]
【００３７】表１に示す結果によれば、ＳｉＮ膜等バリ
ア層２２が露出した状態でマスク２４を除去（アッシン
グ）する場合、その前工程としてクリーニング工程が有
るか無いかで、ＳｉＮ膜等のバリア層２２の削れが大き
く異なっていることが分かった。According to the results shown in Table 1, when the mask 24 is removed (ashed) with the barrier layer 22 such as the SiN film exposed, whether the SiN film or the like is removed before or after the cleaning step is performed. It was found that the abrasion of the barrier layer 22 was greatly different.
【００３８】実施例２
本実施例では図１に示すプラズマ処理装置を用いてクリ
ーニング工程を省略し、下記の諸条件でプラズマ処理、
即ち、絶縁膜層２３のエッチング及びマスク２４のアッ
シングをそれぞれ行った。そして、アッシング工程で用
いた窒素ガスと水素ガスの流量と、マスクのエッチング
レート及びバリア層２２に対するマスク２４に対する選
択比との関係を観た。
（１）エッチング工程の処理条件
ＤＲＭの回転速度：２０ｒｐｍ
サセプタに印加する高周波電源の周波数：１３．５６Ｍ
Ｈｚ
サセプタに印加する高周波電力：１７００Ｗ
サセプタ温度：４０℃
処理容器内圧力：１５０ｍＴｏｒｒ
エッチングガスの流量：Ｃ４Ｆ８＝６ｓｃｃｍ、Ａｒ＝
１０００ｓｃｃｍ、Ｎ２＝１５０ｓｃｃｍExample 2 In this example, the plasma treatment apparatus shown in FIG. 1 was used, and the cleaning step was omitted. Plasma treatment was carried out under the following conditions.
That is, the insulating film layer 23 was etched and the mask 24 was ashed. Then, the relationship between the flow rates of nitrogen gas and hydrogen gas used in the ashing step, the etching rate of the mask, and the selection ratio of the mask 24 to the barrier layer 22 was observed. (1) Etching process conditions DRM rotation speed: 20 rpm Frequency of high frequency power source applied to susceptor: 13.56 M
Hz High frequency power applied to susceptor: 1700 W Susceptor temperature: 40 ° C. Processing vessel pressure: 150 mTorr Etching gas flow rate: C 4 F 8 = 6 sccm, Ar =
1000 sccm, N 2 = 150 sccm
【００３９】（２）アッシング工程の処理条件
下記条件で処理ガスの流量比（Ｎ２／（Ｎ２＋Ｈ２））
を変化させてマスク２４を除去（アッシング）した。
ＤＲＭの回転速度：２０ｒｐｍ
サセプタに印加する高周波電源の周波数：１３．５６Ｍ
Ｈｚ
サセプタに印加する高周波電力：５００Ｗ
サセプタ温度：４０℃
処理容器内圧力：５０ｍＴｏｒｒ(2) Processing condition of ashing process Flow rate ratio of processing gas (N 2 / (N 2 + H 2 )) under the following conditions
Was changed to remove (ash) the mask 24. Rotation speed of DRM: 20 rpm Frequency of high frequency power supply applied to susceptor: 13.56 M
Hz High frequency power applied to susceptor: 500W Susceptor temperature: 40 ° C Pressure inside processing container: 50mTorr
【００４０】図３に示す結果によれば、バリア層２２に
対するマスク２４の選択比は、Ｎ２／（Ｎ２＋Ｈ２）が
８０％以上の領域で約１０以上、９０％以上の領域で約
２０以上と高水準であることが分かった。また、これら
の領域ではマスク２４のアッシングレートも高いことが
分かった。According to the results shown in FIG. 3, the selection ratio of the mask 24 to the barrier layer 22 is about 10 or more in the region where N 2 / (N 2 + H 2 ) is 80% or more, and about 90% or more in the region. It was found to be at a high level of 20 or more. It was also found that the ashing rate of the mask 24 was high in these regions.
【００４１】実施例３
本実施例では図１に示すプラズマ処理装置を用いて実施
例の場合２と同様のエッチング工程により絶縁層２３を
エッチングした後、窒素を含むガス（Ｎ２とＨ ２の混合
ガス）に代えてアンモニアを用いて下記アッシング工程
の諸処理条件によりマスク２４のアッシングをそれぞれ
行った。
アッシング工程の処理条件
ＤＲＭの回転速度：２０ｒｐｍ
サセプタに印加する高周波電源の周波数：１３．５６Ｍ
Ｈｚ
サセプタに印加する高周波電力：３００Ｗ、７００Ｗの
２種類
サセプタ温度：４０℃
アッシングガス：ＮＨ３＝２００、５００、１０００ｓ
ｃｃｍの３種類
処理容器内圧力：６０、１００、２００、４００ｍＴｏ
ｒｒの４種類Example 3
In this embodiment, the plasma processing apparatus shown in FIG. 1 is used.
In the case of the example, the insulating layer 23 is formed by the same etching process as in 2.
After etching, a gas containing nitrogen (NTwoAnd H TwoA mixture of
The following ashing process using ammonia instead of gas)
The ashing of the mask 24 is performed depending on the processing conditions of
went.
Processing conditions of ashing process
Rotation speed of DRM: 20 rpm
Frequency of high frequency power applied to susceptor: 13.56M
Hz
High frequency power applied to the susceptor: 300W, 700W
2 types
Susceptor temperature: 40 ° C
Ashing gas: NHThree= 200,500,1000s
3 types of ccm
Pressure in processing container: 60, 100, 200, 400 mTo
4 types of rr
【００４２】この結果、処理容器内圧力が６０ｍＴｏｒ
ｒの時にはＳｉＮに対するフォトレジストの選択比（マ
スクのエッチングレート／ＳｉＮのエッチングレート）
は１５〜２１、１００ｍＴｏｒｒの時には１７〜２３、
２００ｍＴｏｒｒの時には３０〜３６、４００ｍＴｏｒ
ｒの時には４５〜５２といずれの場合にも選択比が高か
った。As a result, the pressure inside the processing container is 60 mTorr.
When r, the selection ratio of photoresist to SiN (mask etching rate / SiN etching rate)
Is 15-21, 17-23 at 100 mTorr,
30 to 36, 400 mTorr at 200 mTorr
When r was 45 to 52, the selection ratio was high in all cases.
【００４３】[0043]
【発明の効果】本発明の請求項１〜請求項４及び請求項
１３〜請求項１５によれば、被処理体中のシリコン含有
バリア層が露出した状態でマスクを除去する場合、その
前に、バリア層を露出する工程で生じたフッ素含有副生
成物をクリーニング除去することで、マスク除去時のバ
リア層の削れを抑制することができるマスクを除去する
プラズマ処理方法を提供することができる。According to the first to fourth aspects and the thirteenth to fifteenth aspects of the present invention, when the mask is removed with the silicon-containing barrier layer in the object to be processed exposed, the By cleaning and removing the fluorine-containing by-product generated in the step of exposing the barrier layer, it is possible to provide a plasma treatment method for removing the mask, which can suppress the abrasion of the barrier layer at the time of removing the mask.
【００４４】また、本発明の請求項５、請求項６及び請
求項１３〜請求項１５によれば、クリーニングの代わり
にバリア層を露出させる工程で用いた処理容器と別の処
理容器でマスクを除去することで、マスク除去時のバリ
ア層の削れを抑制することができるプラズマ処理方法を
提供することができる。According to the fifth, sixth, and thirteenth to fifteenth aspects of the present invention, the mask is provided in a processing container different from the processing container used in the step of exposing the barrier layer instead of cleaning. By removing the mask, it is possible to provide a plasma processing method capable of suppressing abrasion of the barrier layer at the time of removing the mask.
【００４５】また、本発明の請求項７〜請求項１５によ
れば、被処理体中のシリコン含有バリア層が露出した状
態でマスクを除去する場合、窒素を含むプラズマを用い
ることで、バリア層に対してマスクを選択的に除去する
ことができるプラズマ処理方法を提供するができる。According to the seventh to fifteenth aspects of the present invention, when the mask is removed while the silicon-containing barrier layer in the object to be processed is exposed, the barrier layer is formed by using plasma containing nitrogen. A plasma processing method capable of selectively removing the mask can be provided.
【図１】本発明のプラズマ処理方法に適用したプラズマ
処理装置の一例を示す概略断面図である。FIG. 1 is a schematic sectional view showing an example of a plasma processing apparatus applied to a plasma processing method of the present invention.
【図２】本発明のプラズマ処理方法の一実施形態で使用
したウエハの要部を示す断面概略図である。FIG. 2 is a schematic cross-sectional view showing a main part of a wafer used in one embodiment of the plasma processing method of the present invention.
【図３】本発明のプラズマ処理方法の他の実施形態で使
用したウエハの要部を示す断面概略図である。FIG. 3 is a schematic sectional view showing a main part of a wafer used in another embodiment of the plasma processing method of the present invention.
【図４】本発明のプラズマ処理方法の更に他の実施形態
で使用したウエハの要部を示す断面概略図である。FIG. 4 is a schematic sectional view showing a main part of a wafer used in still another embodiment of the plasma processing method of the present invention.
【図５】本発明の実施例２の結果を示す図で、処理ガス
の流量比（Ｎ２／（Ｎ２＋Ｈ２））と、マスクのアッシ
ングレート及びバリア層に対するマスクの選択比との関
係を示すグラフである。FIG. 5 is a graph showing the results of Example 2 of the present invention, and is a graph showing the relationship between the flow rate ratio of the processing gas (N2 / (N2 + H2)) and the ashing rate of the mask and the selection ratio of the mask to the barrier layer. is there.
Ｗ：ウエハ（被処理体）
１０：プラズマ処理装置
１３：サセプタ
２１、３１、４１：メタル配線層
２２、３２，４２：窒化シリコン膜、酸化シリコン膜、
炭化シリコン膜のいずれか１以上を有する膜（バリア
層）
２３、３３，４３：絶縁膜層
２４、３４，４４：マスクW: wafer (object to be processed) 10: plasma processing apparatus 13: susceptors 21, 31, 41: metal wiring layers 22, 32, 42: silicon nitride film, silicon oxide film,
A film (barrier layer) having any one or more of silicon carbide films 23, 33, 43: insulating film layers 24, 34, 44: mask
───────────────────────────────────────────────────── フロントページの続き (72)発明者 布瀬 暁志 東京都港区赤坂五丁目３番６号 ＴＢＳ放 送センター 東京エレクトロン株式会社内 Ｆターム(参考） 5F004 AA13 BA08 BB08 BB13 BB18 BB22 BC02 BD01 BD03 DA00 DA01 DA02 DA03 DA15 DA16 DA23 DA24 DA25 DA26 DA30 DB03 EA23 EB03 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Akushi Fuse TBS release, 5-3-6 Akasaka, Minato-ku, Tokyo Sending Center Tokyo Electron Limited F term (reference) 5F004 AA13 BA08 BB08 BB13 BB18 BB22 BC02 BD01 BD03 DA00 DA01 DA02 DA03 DA15 DA16 DA23 DA24 DA25 DA26 DA30 DB03 EA23 EB03
Claims (15)
をプラズマ化し、被処理体中のシリコン含有膜上にある
膜を、この膜上にあるマスクのパターンを介してエッチ
ングして上記シリコン含有膜を露出させる工程と、上記
処理容器内の物に付着したフッ素を含有する副生成物を
除去する工程と、上記処理容器内で上記マスクを除去す
る工程とを有することを特徴とするプラズマ処理方法。1. A fluorine-containing gas introduced into a processing container is turned into plasma, and a film on the silicon-containing film in the object to be processed is etched through a mask pattern on the film to contain the silicon-containing film. Plasma treatment characterized by including a step of exposing the film, a step of removing a fluorine-containing byproduct adhering to an object in the processing container, and a step of removing the mask in the processing container Method.
をプラズマ化し、被処理体中のシリコン含有膜を、この
膜上にあるマスクのパターンを介して途中までエッチン
グする工程と、上記処理容器内の物に付着したフッ素を
含有する副生成物を除去する工程と、上記処理容器内で
上記マスクを除去する工程とを有することを特徴とする
プラズマ処理方法。2. A step of plasma-converting a gas containing fluorine introduced into a processing container to partially etch a silicon-containing film in the object to be processed through a mask pattern on the film, and the processing container. A plasma processing method comprising: a step of removing a fluorine-containing by-product adhering to the internal substance; and a step of removing the mask in the processing container.
含有する副生成物を除去する工程では、上記処理容器内
に導入した酸素を含むガスをプラズマ化して上記副生成
物を除去することを特徴とする請求項１または請求項２
に記載のプラズマ処理方法。3. In the step of removing the fluorine-containing by-product adhering to the material in the processing container, the gas containing oxygen introduced into the processing container is turned into plasma to remove the by-product. Claim 1 or Claim 2 characterized by
The plasma processing method described in 1.
水素とを含むガスをプラズマ化して上記マスクを除去す
ることを特徴とする請求項１〜請求項３のいずれか１項
に記載のプラズマ処理方法。4. The plasma according to claim 1, wherein, in the step of removing the mask, a gas containing nitrogen and hydrogen is made into plasma to remove the mask. Processing method.
をプラズマ化し、被処理体中のシリコン含有膜上にある
膜を、この膜上にあるマスクのパターンを介してエッチ
ングし、このシリコン含有膜を露出する工程と、上記処
理容器とは別の処理容器の中で上記マスクを除去する工
程とを有することを特徴とするプラズマ処理方法。5. A fluorine-containing gas introduced into the processing container is turned into plasma, and a film on the silicon-containing film in the object to be processed is etched through a pattern of a mask on the film to obtain the silicon-containing film. A plasma processing method, comprising: a step of exposing the film; and a step of removing the mask in a processing container different from the processing container.
をプラズマ化し、被処理体中のシリコン含有膜を、この
膜上にあるマスクのパターンを介して途中までエッチン
グする工程と、上記処理容器とは別の処理容器の中で上
記マスクを除去する工程とを有することを特徴とするプ
ラズマ処理方法。6. A step of plasma-converting a gas containing fluorine introduced into a processing container to partially etch a silicon-containing film in the object to be processed through a pattern of a mask on the film, and the processing container. And a step of removing the mask in a processing container different from the above.
をプラズマ化し、被処理体中のシリコン含有膜上にある
膜を、この膜上にあるマスクのパターンを介してエッチ
ングし、このシリコン含有膜を露出させる工程と、上記
処理容器内で窒素を含むガスをプラズマ化して上記マス
クを除去する工程とを有することを特徴とするプラズマ
処理方法。7. A fluorine-containing gas introduced into the processing container is turned into plasma, and a film on the silicon-containing film in the object to be processed is etched through a pattern of a mask on the film to obtain the silicon-containing film. A plasma processing method comprising: a step of exposing the film; and a step of plasmaizing a gas containing nitrogen in the processing container to remove the mask.
をプラズマ化し、被処理体中のシリコン含有膜を、この
膜上にあるマスクのパターンを介して途中までエッチン
グする工程と、上記処理容器内で窒素を含むガスをプラ
ズマ化して上記マスクを除去する工程とを有することを
特徴とするプラズマ処理方法。8. A step of plasma-converting a gas containing fluorine introduced into the processing container to partially etch a silicon-containing film in the object to be processed through a pattern of a mask on the film, and the processing container. And a step of plasma-converting a gas containing nitrogen therein to remove the mask, the plasma processing method.
ことを特徴とする請求項７または請求項８に記載のプラ
ズマ処理方法。9. The plasma processing method according to claim 7, wherein the gas containing nitrogen further contains hydrogen.
る水素の流量は、０％を超え、２０％以下であることを
特徴とする請求項９に記載のプラズマ処理方法。10. The plasma processing method according to claim 9, wherein the flow rate of hydrogen with respect to the sum of the flow rate of nitrogen and the flow rate of hydrogen is more than 0% and 20% or less.
スをプラズマ化し、被処理体中のシリコン含有膜上にあ
る膜を、この膜上にあるマスクのパターンを介してエッ
チングし、このシリコン含有膜を露出させる工程と、上
記処理容器内でアンモニアを含むガスをプラズマ化して
上記マスクを除去する工程とを有することを特徴とする
プラズマ処理方法。11. A fluorine-containing gas introduced into the processing container is turned into plasma, and a film on the silicon-containing film in the object to be processed is etched through a pattern of a mask on the film to obtain the silicon-containing film. A plasma processing method comprising: a step of exposing the film; and a step of plasmaizing a gas containing ammonia in the processing container to remove the mask.
スをプラズマ化し、被処理体中のシリコン含有膜を、こ
の膜上にあるマスクのパターンを介して途中までエッチ
ングする工程と、上記処理容器内でアンモニアを含むガ
スをプラズマ化して上記マスクを除去する工程とを有す
ることを特徴とするプラズマ処理方法。12. A step of plasma-converting a gas containing fluorine introduced into a processing container to partially etch a silicon-containing film in the object to be processed through a pattern of a mask on the film, and the processing container. A plasma treatment of a gas containing ammonia therein to remove the mask.
ン、酸化シリコン、炭化シリコンの少なくとも１つを有
する膜であることを特徴とする請求項１〜請求項１２の
いずれか１項に記載のプラズマ処理方法。13. The plasma treatment according to claim 1, wherein the silicon-containing film is a film containing at least one of silicon nitride, silicon oxide, and silicon carbide. Method.
ＣＦ４、ＣＨＦ３、ＣＨ２Ｆ２、ＣＨ３Ｆ、Ｃ２Ｆ４、
Ｃ２Ｆ６、Ｃ３Ｆ６、Ｃ３Ｆ８、Ｃ４Ｆ６、Ｃ４Ｆ８、
Ｃ８Ｆ８のいずれか１つ以上を含むガスであることを特
徴とする請求項１〜請求項１３のいずれか１項に記載の
プラズマ処理方法。14. The gas containing fluorine is at least CF 4 , CHF 3 , CH 2 F 2 , CH 3 F, C 2 F 4 ,
C 2 F 6, C 3 F 6, C 3 F 8, C 4 F 6, C 4 F 8,
The plasma processing method according to any one of claims 1 to 13, characterized in that a gas containing any one or more C 8 F 8.
ことを特徴とする請求項１〜請求項１４のいずれか１項
に記載のプラズマ処理方法。15. The plasma processing method according to claim 1, wherein the mask is a photoresist.
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| JP2002104160A JP4326746B2 (en) | 2002-01-07 | 2002-04-05 | Plasma processing method |
| TW91137526A TWI270137B (en) | 2002-01-07 | 2002-12-26 | Plasma treatment method |
| PCT/JP2002/013861 WO2003058700A1 (en) | 2002-01-07 | 2002-12-27 | Plasma treatment method |
| AU2002359950A AU2002359950A1 (en) | 2002-01-07 | 2002-12-27 | Plasma treatment method |
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| JP2002104160A JP4326746B2 (en) | 2002-01-07 | 2002-04-05 | Plasma processing method |
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| JP4326746B2 JP4326746B2 (en) | 2009-09-09 |
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| JP (1) | JP4326746B2 (en) |
| AU (1) | AU2002359950A1 (en) |
| TW (1) | TWI270137B (en) |
| WO (1) | WO2003058700A1 (en) |
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- 2002-12-26 TW TW91137526A patent/TWI270137B/en not_active IP Right Cessation
- 2002-12-27 WO PCT/JP2002/013861 patent/WO2003058700A1/en active Application Filing
- 2002-12-27 AU AU2002359950A patent/AU2002359950A1/en not_active Abandoned
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2003058700A1 (en) | 2003-07-17 |
| AU2002359950A1 (en) | 2003-07-24 |
| JP4326746B2 (en) | 2009-09-09 |
| TW200306625A (en) | 2003-11-16 |
| TWI270137B (en) | 2007-01-01 |
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