JP2003228316A - Luminous display device - Google Patents
Luminous display deviceInfo
- Publication number
- JP2003228316A JP2003228316A JP2002026242A JP2002026242A JP2003228316A JP 2003228316 A JP2003228316 A JP 2003228316A JP 2002026242 A JP2002026242 A JP 2002026242A JP 2002026242 A JP2002026242 A JP 2002026242A JP 2003228316 A JP2003228316 A JP 2003228316A
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- Prior art keywords
- potential
- electrode
- anode
- cathode
- electron source
- Prior art date
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、比較的低い電界で
電子を放出する材料、特にカーボンナノチューブ、微細
カーボンファイバ、ダイヤモンド等の炭素系材料または
窒化硼素系材料を電子源に用いた発光表示装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting display device using an electron source as a material that emits electrons in a relatively low electric field, particularly a carbon-based material such as carbon nanotubes, fine carbon fibers, diamond, or a boron nitride-based material. Regarding
【０００２】[0002]
【従来の技術】近年、微小な電子源を多数並べ、放出さ
れた電子で蛍光体を励起して表示を行う発光表示装置の
開発が盛んになっている。このような発光表示装置はブ
ラウン管と同等の応答速度と明るさが期待できるうえ
に、液晶を用いる表示装置と同様の薄型化と軽量化が期
待できる。2. Description of the Related Art In recent years, a large number of minute electron sources are arranged, and a light emitting display device that excites a phosphor by the emitted electrons to display an image is actively developed. Such a light emitting display device can be expected to have a response speed and brightness equivalent to those of a cathode ray tube, and can also be expected to be thin and lightweight as in a display device using liquid crystal.
【０００３】図８に従来例の発光表示装置の一例を示
す。陰極パネル８１０は、高融点金属を先端半径０．１
μｍ以下にまで尖らせた高さ１μｍ程度のエミッタ８１
１と、このエミッタ先端近傍に電界をかけて電子を引き
出すためのゲート８１２と、エミッタ８１１とゲート８
１２を電気的に絶縁させるための絶縁層８１３、エミッ
タ８１１に電子を供給するカソード８１４、そして基板
８１５からなる。また、陽極パネル８２０はアノード８
２１、蛍光層８２２そして透明基板８２３からなる。FIG. 8 shows an example of a conventional light emitting display device. The cathode panel 810 is made of a refractory metal with a tip radius of 0.1.
Emitter 81 with a height of about 1 μm, sharpened to less than μm
1, a gate 812 for drawing an electron by applying an electric field near the tip of the emitter, an emitter 811 and a gate 8
It comprises an insulating layer 813 for electrically insulating 12 and a cathode 814 for supplying electrons to the emitter 811 and a substrate 815. The anode panel 820 is the anode 8
21, a fluorescent layer 822 and a transparent substrate 823.
【０００４】ゲート８１２に電圧をかけるとエミッタ８
１１の先端に電界集中が生じて電子が引き出される。引
き出された電子はアノード８２１に掛かる電圧によって
加速され、蛍光層８２２を励起して発光させる。蛍光層
８２２に色純度のよい高エネルギ用の蛍光体を用いるた
めにはアノード８２１に６ｋＶ程度の加速電圧を必要と
し、放電を防ぐためにアノード８２１とカソード８１４
は１．５ｍｍ程度離れた位置に配置する。エミッタ８１
１の先端とゲート電極８１２の間の距離はおよそ１μｍ
以下であるが、エミッタ８１１に使われる高融点金属か
ら電子を引き出すためにはエミッタ８１１の先端に大き
な電界集中を生じさせなければならず、ゲート８１２に
大きな電圧を掛ける必要がある。When a voltage is applied to the gate 812, the emitter 8
An electric field is concentrated at the tip of 11 and electrons are extracted. The extracted electrons are accelerated by the voltage applied to the anode 821 and excite the fluorescent layer 822 to emit light. An accelerating voltage of about 6 kV is required for the anode 821 in order to use a high-energy phosphor with good color purity for the fluorescent layer 822, and the anode 821 and the cathode 814 are used to prevent discharge.
Are placed at a distance of about 1.5 mm. Emitter 81
The distance between the tip of 1 and the gate electrode 812 is about 1 μm.
As described below, in order to extract electrons from the refractory metal used for the emitter 811, a large electric field concentration must be generated at the tip of the emitter 811 and a large voltage must be applied to the gate 812.
【０００５】例えば、「発光型ディスプレイ１」（共立
出版刊、２００１年）の１８９頁、図４．９（ａ）によ
ればゲート電圧として少なくとも５０Ｖ以上必要であ
る。ゲート電圧は低いほうが駆動しやすいので、より低
い電界で電子を放出する材料、例えばカーボンナノチュ
ーブを電子源に用いた例もある。その場合、高融点金属
を用いた図８のエミッタ８１１の場合とは異なり平坦な
構造であっても、ゲート電極に電圧を掛けることにより
電子を引き出すことができる。例えば、ＩＤＷ‘００の
１１７７頁に記載されている報告では、ゲート電極に２
５Ｖ以上掛けることでエミッタから電子が放出され始
め、１００Ｖで１４ｍＡ／ｃｍ２のエミッション電流密
度が得られている。For example, according to page 189 of "Light-Emitting Display 1" (published by Kyoritsu Shuppan, 2001), FIG. 4.9 (a), a gate voltage of at least 50 V or higher is required. Since a lower gate voltage facilitates driving, there is also an example in which a material that emits electrons in a lower electric field, for example, a carbon nanotube is used as an electron source. In that case, unlike the case of the emitter 811 of FIG. 8 using a refractory metal, even if it has a flat structure, electrons can be extracted by applying a voltage to the gate electrode. For example, in the report described on page 1177 of IDW'00, 2
Electrons begin to be emitted from the emitter by applying 5 V or more, and an emission current density of 14 mA / cm 2 is obtained at 100 V.
【０００６】[0006]
【発明が解決しようとする課題】電子源にカーボンナノ
チューブ、微細カーボンファイバ、ダイヤモンド等の炭
素系材料または窒化硼素を用いることにより、高融点金
属の場合とは異なり、鋭利な突起を形成することなく比
較的低いゲート電圧で電子を引き出すことが可能とな
り、駆動が容易な発光表示装置を得ることができる。By using carbon nanotubes, fine carbon fibers, carbonaceous materials such as diamond, or boron nitride for the electron source, unlike the case of refractory metal, sharp projections are not formed. Electrons can be extracted with a relatively low gate voltage, and a light-emitting display device that can be easily driven can be obtained.
【０００７】図２にカーボンナノチューブの電界放出特
性の一例を示す。図２から３Ｖ／μｍの平均電界があれ
ば、５００ｃｄ／ｍ２程度の輝度を得るのに必要なおよ
そ１０ｍＡ／ｃｍ２の電流密度が得られることが分か
る。高融点金属のエミッタ８１１から電子を引き出すに
は５０Ｖ／μｍ以上の平均電界が必要であったのに対し
て非常に低い電界ですむため、ゲート電圧を小さくする
ことができる。しかし、高融点金属エミッタをそのまま
カーボンナノチューブに置き換えると、アノードとカソ
ードの間に掛かる電界によって電子が放出されることが
ある。FIG. 2 shows an example of the field emission characteristics of carbon nanotubes. It can be seen from FIG. 2 that with an average electric field of 3 V / μm, a current density of about 10 mA / cm 2 required to obtain a luminance of about 500 cd / m 2 can be obtained. An average electric field of 50 V / μm or more is required to extract electrons from the refractory metal emitter 811, but a very low electric field is required, so that the gate voltage can be reduced. However, if the refractory metal emitter is replaced with a carbon nanotube as it is, electrons may be emitted due to an electric field applied between the anode and the cathode.
【０００８】例えば、図８のアノード８２１とカソード
８１４の間には４Ｖ／μｍ（＝６ｋＶ÷１．５ｍｍ）の
平均電界が発生する。この場合、５０Ｖ／μｍ以上の平
均電界が必要な高融点金属のエミッタ８１１から電子は
放出されないが、３Ｖ／μｍの平均電界で済むカーボン
ナノチューブでは電子が放出される。このため、高融点
金属のエミッタの場合とは異なり、カーボンナノチュー
ブを用いた場合はアノードやカソード、その他の電極の
設定順序によって不必要な電子放出が生じ、画面上に不
要な輝点が現れることがあった。For example, an average electric field of 4 V / μm (= 6 kV ÷ 1.5 mm) is generated between the anode 821 and the cathode 814 of FIG. In this case, no electrons are emitted from the high melting point metal emitter 811 that requires an average electric field of 50 V / μm or more, but electrons are emitted from the carbon nanotubes that require an average electric field of 3 V / μm. Therefore, unlike the case of a refractory metal emitter, when carbon nanotubes are used, unnecessary electron emission occurs depending on the setting order of the anode, cathode, and other electrodes, and unnecessary bright spots appear on the screen. was there.
【０００９】アノードの電圧を低く抑えるか、アノード
とカソードの間の距離を大きくすれば、アノードとカソ
ードの間に生じる平均電界を十分小さくすることがで
き、カーボンナノチューブなどの低電界電子放出材料を
用いた場合でも不必要な電子放出を防ぐことができる。
例えば前記文献ＩＤＷ‘００の１１７７頁に記載されて
いる報告では、アノード電圧を７００Ｖと低く抑え、ア
ノードとカソードの間の距離を１．５ｍｍとしているの
で、平均電界が０．４７Ｖ／μｍと小さくなり、不要な
電子放出が生じることはない。If the voltage of the anode is kept low or the distance between the anode and the cathode is increased, the average electric field generated between the anode and the cathode can be made sufficiently small, and a low field electron emission material such as carbon nanotube can be obtained. Even when used, unnecessary electron emission can be prevented.
For example, in the report described on page 1177 of the above document IDW'00, the anode voltage is kept as low as 700 V and the distance between the anode and the cathode is 1.5 mm, so the average electric field is as small as 0.47 V / μm. Therefore, unnecessary electron emission does not occur.
【００１０】しかし、上記従来例のような低いアノード
電圧では（Ｚｎ０．２，Ｃｄ０．８）Ｓ：Ａｇ，Ｃｌ＋
Ｉｎ２Ｏ３…赤、ＺｎＯ：Ｚｎ…緑、ＺｎＳ：〔Ｚｎ〕
＋Ｉｎ２Ｏ３…青、などの色純度が悪い低エネルギ用の
蛍光体しか用いることができない。このため、色再現性
のよい発光表示装置を提供することができないという問
題があった。However, at the low anode voltage as in the above-mentioned conventional example, (Zn 0.2 , Cd 0.8 ) S: Ag, Cl +
In 2 O 3 ... Red, ZnO: Zn ... Green, ZnS: [Zn]
Only low energy phosphors having poor color purity such as + In 2 O 3 ... Blue can be used. Therefore, there is a problem that it is not possible to provide a light emitting display device having good color reproducibility.
【００１１】アノードとカソードの間の距離を大きくす
れば、アノードとカソードの間の平均電界を十分小さく
できるために、不要な電子放出を防ぐとともに、Ｙ２Ｏ
２Ｓ：Ｅｕ３＋…赤、ＺｎＳ：Ａｕ，Ｃｕ，Ａｌ…緑、
ＺｎＳ：Ａｇ…青、などの色純度のよい高エネルギ用の
蛍光体を用いることができる。しかし、この場合はアノ
ードとカソードの間の距離が大きいために発光表示装置
が厚くなるという問題があった。If the distance between the anode and the cathode is increased, the average electric field between the anode and the cathode can be made sufficiently small, so that unnecessary electron emission is prevented and Y 2 O
2 S: Eu 3 + ... red, ZnS: Au, Cu, Al ... green,
A phosphor for high energy, such as ZnS: Ag ... Blue, with good color purity can be used. However, in this case, since the distance between the anode and the cathode is large, there is a problem that the light emitting display device becomes thick.
【００１２】本発明の目的は、上記の従来技術の持つ課
題を解決し、不必要な電子放出とそれに起因する不要な
輝点を生じさせることがない、薄型で色再現性のよい発
光表示装置を提供することにある。An object of the present invention is to solve the above-mentioned problems of the prior art and to prevent emission of unnecessary electrons and unnecessary bright spots resulting therefrom, and to provide a thin, light-emitting display device with good color reproducibility. To provide.
【００１３】[0013]
【課題を解決するための手段】上記目的を達成するため
に本発明の発光表示装置では、蛍光体を発光させるとき
のアノード電極の電位をＶａｏｎ、蛍光体を発光させな
いときの制御電極の電位およびカソード電極の電位をそ
れぞれＶｃｏｆｆ、Ｖｋｏｆｆとした場合に、Ｖａｏ
ｎ、Ｖｃｏｆｆ、Ｖｋｏｆｆの設定および解除の順序を
規定した。In order to achieve the above object, in the light emitting display device of the present invention, the potential of the anode electrode when the phosphor emits light is Vaon, and the potential of the control electrode when the phosphor does not emit and When the potentials of the cathode electrodes are Vcoff and Vkoff, respectively, Vao
The order of setting and releasing n, Vcoff, and Vkoff was defined.
【００１４】図１において、アノード電極１０１とカソ
ード電極１０２を１．５ｍｍ離れた位置に配置し、カソ
ード電極１０２上にカーボンナノチューブを含む炭素系
材料または窒化硼素からなる群から選択された材料を含
む電子源１０３を配設し、カソード電極１０２の電位を
０Ｖ、アノード電極１０１の電位Ｖａｏｎを高エネルギ
蛍光体が使用可能な６ｋＶに設定すると、アノード電極
１０１とカソード電極１０２の間の平均電界は４Ｖ／μ
ｍとなり、図２から分かるように電子源１０３から電子
が引き出されるのに十分な電界が生じる。In FIG. 1, the anode electrode 101 and the cathode electrode 102 are arranged at a position separated by 1.5 mm, and the cathode electrode 102 contains a material selected from the group consisting of carbon nanotube-containing carbon-based materials or boron nitride. When the electron source 103 is provided, the potential of the cathode electrode 102 is set to 0V, and the potential Vaon of the anode electrode 101 is set to 6kV, which allows high energy phosphors, the average electric field between the anode electrode 101 and the cathode electrode 102 is 4V. / Μ
m, and as can be seen from FIG. 2, an electric field sufficient to pull out electrons from the electron source 103 is generated.
【００１５】したがって、カソード電極１０２の電位を
Ｖｋｏｆｆに、または、制御電極１０４の電位をＶｃｏ
ｆｆに設定する前に、アノード電極１０１の電位Ｖａｏ
ｎを設定すると、電子源１０３から不要に電子が引き出
される。これを防ぐために制御電極の電位またはカソー
ド電極の電位の少なくとも一方をそれぞれＶｃｏｆｆま
たはＶｋｏｆｆに設定した後に、アノード電極の電位を
Ｖａｏｎに設定するようにした。Therefore, the potential of the cathode electrode 102 is set to Vkoff, or the potential of the control electrode 104 is set to Vcoff.
Before setting to ff, the potential Vao of the anode electrode 101
When n is set, electrons are unnecessarily extracted from the electron source 103. In order to prevent this, at least one of the potential of the control electrode and the potential of the cathode electrode is set to Vcoff or Vkoff, respectively, and then the potential of the anode electrode is set to Vaon.
【００１６】また、アノード電極の電位Ｖａｏｎを解除
する前に制御電極の電位またはカソード電極の電位の少
なくとも一方をそれぞれＶｃｏｆｆまたはＶｋｏｆｆに
設定し、その後、アノード電極の電位Ｖａｏｎを解除す
ることで、やはり不要な電子放出とそれに起因する輝点
が生じるのを防ぐことができた。Further, before the potential Vaon of the anode electrode is released, at least one of the potential of the control electrode and the potential of the cathode electrode is set to Vcoff or Vkoff, respectively, and then the potential Vaon of the anode electrode is released. It was possible to prevent unnecessary electron emission and the resulting bright spot.
【００１７】図２より、３Ｖ／μｍの平均電界があれば
５００ｃｄ／ｍ２程度の輝度を得るのに必要な、およそ
１０ｍＡ／ｃｍ２の電流密度が得られる。上述したよう
に、図１において、アノード電極１０１とカソード電極
１０２の間の距離を１．５ｍｍに、カソード電極１０２
の電位を０Ｖ、アノード電極１０１の電位Ｖａｏｎを高
エネルギ蛍光体が使用可能な６ｋＶに設定すると、アノ
ード電極１０１とカソード電極１０２の間の平均電界は
４Ｖ／μｍとなる。From FIG. 2, it is possible to obtain a current density of about 10 mA / cm 2 required to obtain a luminance of about 500 cd / m 2 if an average electric field of 3 V / μm is present. As described above, in FIG. 1, the distance between the anode electrode 101 and the cathode electrode 102 is 1.5 mm,
When the potential of the anode electrode 101 is set to 0 V and the potential Vaon of the anode electrode 101 is set to 6 kV, which allows the high energy phosphor to be used, the average electric field between the anode electrode 101 and the cathode electrode 102 is 4 V / μm.
【００１８】しかし、これでは図２から分かるように、
電子源１０３から過剰な電子が引き出されて蛍光体や電
子源の寿命を短くする原因となる。アノード電極１０１
とカソード電極１０２の間の距離を大きくすることで、
電子源１０３に掛かる平均電界を小さくできるが、それ
では装置の大型化につながる。However, as can be seen from FIG.
Excessive electrons are extracted from the electron source 103, which shortens the life of the phosphor and the electron source. Anode electrode 101
By increasing the distance between the cathode electrode 102 and
Although the average electric field applied to the electron source 103 can be reduced, this leads to an increase in the size of the device.
【００１９】そこで、蛍光体を発光させるときの制御電
極の電位およびカソード電極の電位をそれぞれＶｃｏ
ｎ、Ｖｋｏｎとし、アノード電極−カソード電極間距離
およびアノード電極−制御電極間距離をそれぞれＤａ
ｋ、Ｄａｃとした場合に、（Ｖｃｏｎ−Ｖｋｏｎ）の値
が（Ｖａｏｎ−Ｖｋｏｎ）×（Ｄａｋ−Ｄａｃ）／Ｄａ
ｋの値よりも小さくすれば、装置を大型化することな
く、適切な電子量を電子源１０３から引き出すことがで
きる。例えば、アノード電極１０１と制御電極１０４の
間の距離が９５０μｍの場合は、制御電極の電位を１５
０Ｖとすることで、電子源１０３に掛かる平均電界を３
Ｖ／μｍとすることができ、適正な電流密度を得ること
ができる。Therefore, the potential of the control electrode and the potential of the cathode electrode when the phosphor is made to emit light are respectively set to Vco.
n and Vkon, and the distance between the anode electrode and the cathode electrode and the distance between the anode electrode and the control electrode are Da.
When k and Dac, the value of (Vcon-Vkon) is (Vaon-Vkon) * (Dak-Dac) / Da
If the value is smaller than the value of k, an appropriate amount of electrons can be extracted from the electron source 103 without increasing the size of the device. For example, when the distance between the anode electrode 101 and the control electrode 104 is 950 μm, the potential of the control electrode is 15
By setting it to 0 V, the average electric field applied to the electron source 103 is 3
V / μm can be obtained, and an appropriate current density can be obtained.
【００２０】[0020]
【発明の実施の形態】以下、実施の形態を参照して本発
明をさらに詳細に説明する。なお、図中における同一の
記号は、同一物または類似物を表示するものとする。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in more detail with reference to the embodiments. The same symbols in the drawings indicate the same or similar items.
【００２１】図３は本発明による発光表示装置の一画素
の構成例とその部分拡大図を示した図である。図３にお
いて、陽極パネル３１０は少なくともガラス基板３１
１、蛍光層３１２、アノード３１３からなっている。蛍
光層はカラー表示を行うために赤（Ｒ）、緑（Ｇ）、青
（Ｂ）の三色の領域に分けられており、その間はブラッ
クマトリクスで仕切られている。FIG. 3 is a diagram showing a configuration example of one pixel of the light emitting display device according to the present invention and a partially enlarged view thereof. In FIG. 3, the anode panel 310 is at least the glass substrate 31.
1, a fluorescent layer 312, and an anode 313. The fluorescent layer is divided into three color regions of red (R), green (G), and blue (B) for color display, and a black matrix is provided between the regions.
【００２２】陰極パネル３２０は基板３０１上にカソー
ドライン３０２と制御ライン３０４を、絶縁層３０３を
介して直交して設けている。カソードライン３０２は画
素の三色の領域に共通に設けられているのに対して、制
御ライン３０４は各色に対応して備えられている。この
画素の表示すべき色に対応して、それぞれの制御ライン
３０４に印加する電位を制御することで色が選択され
る。制御ライン３０４には複数の開口部３０５が設けら
れており、拡大図に示される通り、開口部３０５内には
電子源３０６が備えられている。In the cathode panel 320, a cathode line 302 and a control line 304 are provided on a substrate 301 so as to be orthogonal to each other with an insulating layer 303 interposed therebetween. The cathode line 302 is commonly provided in the three color regions of the pixel, while the control line 304 is provided for each color. A color is selected by controlling the potential applied to each control line 304 corresponding to the color to be displayed by this pixel. The control line 304 is provided with a plurality of openings 305, and an electron source 306 is provided in the openings 305 as shown in an enlarged view.
【００２３】次に図３で説明した画素構成を含めた発光
表示装置の部分構成について説明する。図４は発光表示
装置の陽極パネル３１０と陰極パネル３２０の配置関係
を示した部分断面斜視図である。Next, a partial configuration of the light emitting display device including the pixel configuration described in FIG. 3 will be described. FIG. 4 is a partial cross-sectional perspective view showing the positional relationship between the anode panel 310 and the cathode panel 320 of the light emitting display device.
【００２４】図４において、陽極パネル３１０と陰極パ
ネル３２０は、両者の距離が略一定になるように複数の
絶縁性のスペーサ４０１を介して接合され、陽極パネル
３１０と陰極パネル３２０の間は真空に保たれている。
陰極パネル３２０には複数のカソードライン３０２と複
数の制御ライン３０４が絶縁層３０３を介して直交して
配置されている。また、制御ライン３０４には複数の開
口部３０５が配置され、図３の拡大図で説明した通り、
開口部３０５内には電子源３０６が設けられ、制御ライ
ン３０４に電圧を印加することで電子源３０６から放出
される電子量を制御する。放出された電子はアノード３
１３に掛かっている電位によって加速されて蛍光層３１
２を励起する。図４には図示していないが、蛍光層３１
２は図３で説明した通り、カラー表示を行うために複数
の赤（Ｒ）、緑（Ｇ）、青（Ｂ）の領域に分けられてお
り、その間はブラックマトリクスで仕切られている。In FIG. 4, the anode panel 310 and the cathode panel 320 are joined together via a plurality of insulating spacers 401 so that the distance between them is substantially constant, and a vacuum is provided between the anode panel 310 and the cathode panel 320. Is kept at.
In the cathode panel 320, a plurality of cathode lines 302 and a plurality of control lines 304 are arranged orthogonal to each other with an insulating layer 303 interposed therebetween. Further, a plurality of openings 305 are arranged in the control line 304, and as described in the enlarged view of FIG.
An electron source 306 is provided in the opening 305, and the amount of electrons emitted from the electron source 306 is controlled by applying a voltage to the control line 304. The emitted electrons are the anode 3
The fluorescent layer 31 is accelerated by the potential applied to 13
Excite 2. Although not shown in FIG. 4, the fluorescent layer 31
As described with reference to FIG. 3, the area 2 is divided into a plurality of red (R), green (G), and blue (B) areas for color display, and a black matrix is provided between the areas.
【００２５】次に図３および図４で示した本発明による
発光表示装置の作製方法について説明する。ガラスの基
板３０１上に銀ペーストを幅１２００μｍ、ピッチ１２
７０μｍで印刷し、大気中において５５０℃で２０分間
焼成し、カソードライン３０２を形成した。この後、５
μｍ以下の長さに粉砕したカーボンナノチューブを重量
比で約１０％含むペーストをカソードライン３０２上の
電子放出させる所定の位置に印刷し、大気中において５
３０℃で１５分間焼成して、厚さ約３０μｍの電子源３
０６を形成した。Next, a method of manufacturing the light emitting display device according to the present invention shown in FIGS. 3 and 4 will be described. Silver paste on a glass substrate 301 with a width of 1200 μm and a pitch of 12
It was printed at 70 μm and baked in the atmosphere at 550 ° C. for 20 minutes to form the cathode line 302. After this, 5
A paste containing about 10% by weight of carbon nanotubes crushed to a length of less than or equal to μm is printed on the cathode line 302 at a predetermined position where electrons are emitted, and the paste is printed in air at 5
Electron source 3 with a thickness of about 30 μm after firing at 30 ° C for 15 minutes
06 was formed.
【００２６】次に電子源３０６が配設されている領域以
外のカソードライン３０２上の所定の領域に絶縁性ペー
ストを印刷し、これを５１０℃で２０分間焼成して、厚
さ約５０μｍの絶縁層３０３を形成した。形成した絶縁
層３０３の上にカソードライン３０２と直交する方向に
銀ペーストを幅４００μｍ、ピッチ４２３μｍで印刷
し、大気中において４９０℃で１５分間焼成し、制御ラ
イン３０４を形成した。Next, an insulating paste is printed on a predetermined area on the cathode line 302 other than the area where the electron source 306 is arranged, and the paste is baked at 510 ° C. for 20 minutes to obtain an insulation film having a thickness of about 50 μm. The layer 303 was formed. A silver paste was printed on the formed insulating layer 303 in a direction orthogonal to the cathode line 302 with a width of 400 μm and a pitch of 423 μm, and baked in the air at 490 ° C. for 15 minutes to form a control line 304.
【００２７】以上の方法により陰極パネル３２０を作製
した。陽極パネル３１０はガラス基板３１１上に、ブラ
ウン管と同様の製造工程によりブラックマトリクス（図
示せず）、蛍光層３１２、アノード３１３を形成して作
製する。A cathode panel 320 was produced by the above method. The anode panel 310 is manufactured by forming a black matrix (not shown), a fluorescent layer 312, and an anode 313 on a glass substrate 311 by the same manufacturing process as that of a cathode ray tube.
【００２８】図５は本発明による発光表示装置の断面構
造の概略を示す。電子放出を行う電子源と蛍光層の間の
距離が略一定になるように、スペーサ４０１を介して陽
極パネル３１０と陰極パネル３２０を適切な位置に合わ
せたうえで接合し、陰極パネル３２０の背面に主にバリ
ウムからなるゲッタ５０１を取り付ける。表示部全体を
真空排気するために陽極パネル３１０と側面パネル５０
２と背面パネル５０３を低融点ガラスで封着し、背面パ
ネル５０３にあらかじめ取り付けてある排気管５０４か
ら油拡散ポンプを用いて約２００℃に加熱しながら１０
０μＰａ程度まで排気した後、排気管５０４を封じ切
る。その後、ゲッタ５０１を加熱して背面パネル５０３
内にバリウムゲッタ膜を形成する。以上の工程により発
光表示装置を作製できる。FIG. 5 schematically shows a sectional structure of the light emitting display device according to the present invention. The anode panel 310 and the cathode panel 320 are aligned at appropriate positions via the spacers 401 and joined together so that the distance between the electron source that emits electrons and the fluorescent layer is substantially constant, and the back surface of the cathode panel 320 is joined. A getter 501 mainly made of barium is attached to the. The anode panel 310 and the side panel 50 are used to evacuate the entire display unit.
2 and the rear panel 503 are sealed with a low-melting glass, and the exhaust pipe 504 previously attached to the rear panel 503 is heated to about 200 ° C. using an oil diffusion pump.
After exhausting to about 0 μPa, the exhaust pipe 504 is closed. After that, the getter 501 is heated to heat the back panel 503.
A barium getter film is formed inside. Through the above steps, a light emitting display device can be manufactured.
【００２９】図６はカソードライン３０２、制御ライン
３０４、電子源３０６を回路として表し、その駆動方法
を模式的に示した図である。カソードライン３０２には
走査信号６０１が加えられ。順次選択されていく。その
間、制御ラインに輝度信号６０２が加えられ、その信号
に応じて電子源３０６からの電子放出量が制御される。FIG. 6 is a diagram schematically showing the cathode line 302, the control line 304, and the electron source 306 as a circuit, and the driving method thereof. A scan signal 601 is applied to the cathode line 302. It is selected sequentially. Meanwhile, the brightness signal 602 is applied to the control line, and the electron emission amount from the electron source 306 is controlled according to the signal.
【００３０】図７は、図６で示した回路において、カソ
ードライン、制御ラインおよびアノードに加える電位の
タイムスケジュールの一例を示した図である。図７の一
番上の矩形波は輝度信号として制御ラインに加えられる
電位Ｖｃであり、二番目の矩形波は走査信号としてカソ
ードラインに加えられる電位Ｖｋであり、三番目の矩形
波は電子を加速するためのアノードに加えられる電位Ｖ
ａである。Ｖｃｇ、Ｖｋｇ、Ｖａｇはそれぞれ、制御ラ
イン電位Ｖｃ、カソードライン電位Ｖｋ、アノード電位
Ｖａの初期状態の電位を示しており、例えば発光表示装
置の電源が切られているときの電位を示す。FIG. 7 is a diagram showing an example of a time schedule of potentials applied to the cathode line, the control line and the anode in the circuit shown in FIG. The rectangular wave at the top of FIG. 7 is a potential Vc applied to the control line as a luminance signal, the second rectangular wave is a potential Vk applied to the cathode line as a scanning signal, and the third rectangular wave is an electron. Potential V applied to the anode for acceleration
a. Vcg, Vkg, and Vag represent the initial potentials of the control line potential Vc, the cathode line potential Vk, and the anode potential Va, for example, the potentials when the light emitting display device is powered off.
【００３１】発光表示装置の電源が入ると、制御ライン
電位Ｖｃ、カソードライン電位Ｖｋ、アノード電位Ｖａ
は一旦全てｏｆｆ状態とするためにそれぞれ、Ｖｃｏｆ
ｆ、Ｖｋｏｆｆ、Ｖａｏｆｆの電位に設定される（時間
ｔ１）。この後、アノード電位Ｖａを蛍光層の発光に必
要な電位であるＶａｏｎに設定する（時間ｔ２）。この
とき、制御ライン電位ＶｃがＶｃｏｆｆ、カソードライ
ン電位ＶｋがＶｋｏｆｆに設定されたままなので、電子
源３０６から電子が不用意に放出されることはない。そ
の後、制御ライン電位Ｖｃとカソードライン電位Ｖｋに
それぞれＶｃｏｎとＶｋｏｎが加えられ、画像表示を行
う（時間ｔ３以降）。When the power of the light emitting display device is turned on, the control line potential Vc, the cathode line potential Vk, and the anode potential Va.
Are set to Voff
The potentials of f, Vkoff, and Vaoff are set (time t 1 ). After that, the anode potential Va is set to Vaon, which is a potential required for light emission of the fluorescent layer (time t 2 ). At this time, since the control line potential Vc remains set to Vcoff and the cathode line potential Vk remains set to Vkoff, electrons are not accidentally emitted from the electron source 306. Thereafter, the control line potential Vc respectively Vcon and Vkon the cathode line potential Vk is applied, an image is displayed (time t 3 or later).
【００３２】発光表示装置の電源をオフ状態とする前に
は、まず、制御ライン電位Ｖｃとカソードライン電位Ｖ
ｋをそれぞれＶｃｏｆｆとＶｋｏｆｆに設定し、電子源
からの電子放出を止める（時間ｔｎ−３）。その後、ア
ノード電位ＶａをＶａｏｆｆに設定する（時間
ｔｎ−２）。これにより電子源３０６から電子が不用意
に放出されるのを防ぐことができる。最後に制御ライン
電位Ｖｃ、カソードライン電位Ｖｋ、アノード電位Ｖａ
をそれぞれＶｃｇ、Ｖｋｇ、Ｖａｇに設定し、初期状態
に戻す（時間ｔｎ−１）。Before turning off the power supply of the light emitting display device, first, the control line potential Vc and the cathode line potential Vc are set.
k is set to Vcoff and Vkoff, respectively, and the electron emission from the electron source is stopped (time t n-3 ). After that, the anode potential Va is set to Vaoff (time t n-2 ). As a result, it is possible to prevent the electrons from being accidentally emitted from the electron source 306. Finally, control line potential Vc, cathode line potential Vk, anode potential Va
Are set to Vcg, Vkg, and Vag, respectively, and the initial state is restored (time t n-1 ).
【００３３】以上、本発明によれば、カーボンナノチュ
ーブ、微細カーボンファイバ、ダイヤモンド、ダイヤモ
ンドライクカーボン、窒化硼素および炭素含有窒化硼素
などの、低電界において電子を放出する材料を電子源と
して用いても、不必要な電子放出とそれに起因する不要
な輝点を生じさせることがなく、薄型で色再現性のよい
発光表示装置を提供することができる。As described above, according to the present invention, even if a material that emits electrons in a low electric field, such as carbon nanotube, fine carbon fiber, diamond, diamond-like carbon, boron nitride and carbon-containing boron nitride, is used as an electron source, It is possible to provide a light emitting display device which is thin and has good color reproducibility without generating unnecessary electron emission and unnecessary bright spots caused thereby.
【００３４】[0034]
【発明の効果】本発明によれば、カーボンナノチューブ
等の数Ｖ／μｍの低電界において電子を放出する電子源
材料を用いると際に、アノード、カソードおよび制御電
極に印加する電位の順序を設定することで、不必要な電
子放出とそれに起因する不要な輝点を防ぐことができる
とともに、薄型で色再現性のよい発光表示装置を提供す
ることができる。According to the present invention, when an electron source material that emits electrons in a low electric field of several V / μm such as a carbon nanotube is used, the order of potentials applied to the anode, cathode and control electrode is set. By doing so, it is possible to prevent unnecessary electron emission and unnecessary bright spots resulting therefrom, and it is possible to provide a thin light emitting display device having good color reproducibility.
【図１】本発明の動作原理を説明するための発光表示装
置の模式的断面図。FIG. 1 is a schematic cross-sectional view of a light emitting display device for explaining the operation principle of the present invention.
【図２】本発明に用いる電子源の電子放出特性の一例を
示す図。FIG. 2 is a diagram showing an example of electron emission characteristics of an electron source used in the present invention.
【図３】本発明による実施例の画素構成の概略を説明す
るための斜視図。FIG. 3 is a perspective view for explaining an outline of a pixel configuration of an example according to the present invention.
【図４】本発明による実施例の部分構成の概略を説明す
るための斜視図。FIG. 4 is a perspective view for explaining an outline of a partial configuration of an embodiment according to the present invention.
【図５】本発明による実施例の断面構成の概略を説明す
るための断面図。FIG. 5 is a sectional view for explaining an outline of a sectional configuration of an example according to the present invention.
【図６】本発明による実施例の電子放出素子の回路図。FIG. 6 is a circuit diagram of an electron-emitting device according to an embodiment of the present invention.
【図７】本発明による実施例の駆動信号の波形図。FIG. 7 is a waveform diagram of drive signals according to an embodiment of the present invention.
【図８】従来例における動作原理を説明するための断面
図。FIG. 8 is a cross-sectional view for explaining the operation principle of a conventional example.
１０１…アノード電極、１０２…カソード電極、１０３
…電子源、１０４…制御電極、３０１…基板、３０２…
カソードライン、３０３、８１３…絶縁層、３０４…制
御ライン、３０５…開口部、３０６…電子源、３１０、
８２０…陽極パネル、３１１…ガラス基板、３１２、８
２２…蛍光層、３１３…アノード、３２０、８１０…陰
極パネル、４０１…スペーサ、５０１…ゲッタ、５０２
…側面パネル、５０３…背面パネル、５０４…排気管、
６０１…走査信号、６０２…輝度信号、８１１…エミッ
タ、８１２…ゲート電極、８１４…カソード電極、８１
５…基板、８２１…金属膜、８２３…透明基板。101 ... Anode electrode, 102 ... Cathode electrode, 103
... electron source, 104 ... control electrode, 301 ... substrate, 302 ...
Cathode line, 303, 813 ... Insulating layer, 304 ... Control line, 305 ... Opening part, 306 ... Electron source, 310,
820 ... Anode panel, 311 ... Glass substrate, 312, 8
22 ... Fluorescent layer, 313 ... Anode, 320, 810 ... Cathode panel, 401 ... Spacer, 501 ... Getter, 502
... side panel, 503 ... rear panel, 504 ... exhaust pipe,
601 ... Scan signal, 602 ... Luminance signal, 811 ... Emitter, 812 ... Gate electrode, 814 ... Cathode electrode, 81
5 ... Substrate, 821 ... Metal film, 823 ... Transparent substrate.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 岡井 誠 千葉県茂原市早野3300番地 株式会社日立 製作所ディスプレイグループ内 (72)発明者 林 伸明 千葉県茂原市早野3300番地 株式会社日立 製作所ディスプレイグループ内 Ｆターム(参考） 5C058 AA03 BA01 BA05 BA35 BB25 5C080 AA08 AA18 BB05 CC03 DD09 DD30 FF12 JJ04 JJ05 JJ06 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Makoto Okai Hitachi, Ltd. 3300 Hayano, Mobara-shi, Chiba Factory Display Group (72) Inventor Nobuaki Hayashi Hitachi, Ltd. 3300 Hayano, Mobara-shi, Chiba Factory Display Group F term (reference) 5C058 AA03 BA01 BA05 BA35 BB25 5C080 AA08 AA18 BB05 CC03 DD09 DD30 FF12 JJ04 JJ05 JJ06
Claims (4)
ソード電極と、前記電子源から放出される電子の量を調
節する制御電極と、前記電子源から放出された電子を加
速させるアノード電極と、前記電子源から放出された電
子により励起されて発光する蛍光体を少なくとも有し、
蛍光体を発光させるときのアノード電極に印加する電位
をＶａｏｎ、蛍光体を発光させるときには制御電極の電
位およびカソード電極の電位をそれぞれＶｃｏｎ、Ｖｋ
ｏｎとするのに対して、制御電極の電位をＶｃｏｆｆに
するか、カソード電極の電位をＶｋｏｆｆにすることに
より、蛍光体を発光させないように制御することができ
る発光表示装置において、アノード電極の電位をＶａｏ
ｎと異なる状態からＶａｏｎの状態に変化させる際に
は、制御電極の電位がＶｃｏｆｆであるか、もしくはカ
ソード電極の電位がＶｋｏｆｆであるかの、少なくとも
一方の状態を満たすことを特徴とする発光表示装置。1. An electron source, a cathode electrode for supplying electrons to the electron source, a control electrode for adjusting the amount of electrons emitted from the electron source, and an anode for accelerating the electrons emitted from the electron source. An electrode, and at least a phosphor that emits light by being excited by electrons emitted from the electron source,
The potential applied to the anode electrode when the phosphor emits light is Vaon, and the potential of the control electrode and the cathode electrode when the phosphor emits Vcon and Vk, respectively.
On the other hand, the potential of the anode electrode in the light emitting display device that can be controlled so that the phosphor does not emit light by setting the potential of the control electrode to Vcoff or the potential of the cathode electrode to Vkoff. Vao
When changing from a state different from n to a Vaon state, at least one of the control electrode potential Vcoff and the cathode electrode potential Vkoff is satisfied. apparatus.
ｎとは異なる状態に変化させる際には、制御電極の電位
がＶｃｏｆｆであるか、カソード電極の電位がＶｋｏｆ
ｆであるかの、少なくとも一方の状態を満たすことを特
徴とする請求項１に記載の発光表示装置。2. The potential of the anode electrode is changed from Vaon to Vao.
When changing to a state different from n, the potential of the control electrode is Vcoff or the potential of the cathode electrode is Vkof.
The light-emitting display device according to claim 1, wherein at least one of the states f and f is satisfied.
アノード電極−制御電極間距離をそれぞれＤａｋ、Ｄａ
ｃとした場合に、（Ｖｃｏｎ−Ｖｋｏｎ）の値が（Ｖａ
ｏｎ−Ｖｋｏｎ）×（Ｄａｋ−Ｄａｃ）／Ｄａｋの値よ
りも小さいことを特徴とする請求項１に記載の発光表示
装置。3. The distance between the anode electrode and the cathode electrode and the distance between the anode electrode and the control electrode are Dak and Da, respectively.
When c is set, the value of (Vcon-Vkon) becomes (Va
The light emitting display device according to claim 1, wherein the value is smaller than the value of (on-Vkon) * (Dak-Dac) / Dak.
ボンナノチューブ、微細カーボンファイバ、ダイヤモン
ド、ダイヤモンドライクカーボン、窒化硼素および炭素
含有窒化硼素からなる群から選択された電子放出材料の
少なくとも１つであることを特徴とする請求項１ないし
３のいずれかに記載の発光表示装置。4. At least one electron-emitting material selected from the group consisting of carbon nanotubes, fine carbon fibers, diamond, diamond-like carbon, boron nitride and carbon-containing boron nitride in which the main component of the material constituting the electron source is 4. The light emitting display device according to claim 1, wherein
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002026242A JP3937853B2 (en) | 2002-02-04 | 2002-02-04 | Luminescent display device |
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| Application Number | Priority Date | Filing Date | Title |
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| JP2002026242A JP3937853B2 (en) | 2002-02-04 | 2002-02-04 | Luminescent display device |
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| JP2003228316A true JP2003228316A (en) | 2003-08-15 |
| JP3937853B2 JP3937853B2 (en) | 2007-06-27 |
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| JP2002026242A Expired - Fee Related JP3937853B2 (en) | 2002-02-04 | 2002-02-04 | Luminescent display device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006018214A (en) * | 2004-06-30 | 2006-01-19 | Samsung Sdi Co Ltd | Driving method for electron emission display device and electron emission display device |
| US7145528B2 (en) | 2002-11-21 | 2006-12-05 | Canon Kabushiki Kaisha | Display device and driving and controlling method therefor |
| US7224331B2 (en) | 2002-11-13 | 2007-05-29 | Canon Kabushiki Kaisha | Display device and drive control method therefor |
-
2002
- 2002-02-04 JP JP2002026242A patent/JP3937853B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7224331B2 (en) | 2002-11-13 | 2007-05-29 | Canon Kabushiki Kaisha | Display device and drive control method therefor |
| US7145528B2 (en) | 2002-11-21 | 2006-12-05 | Canon Kabushiki Kaisha | Display device and driving and controlling method therefor |
| JP2006018214A (en) * | 2004-06-30 | 2006-01-19 | Samsung Sdi Co Ltd | Driving method for electron emission display device and electron emission display device |
| US7710362B2 (en) | 2004-06-30 | 2010-05-04 | Samsung Sdi Co., Ltd. | Electron emission display (EED) and method of driving the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3937853B2 (en) | 2007-06-27 |
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