JP2003209100A - Removing method for ammonium chloride stuck and deposited on cvd exhaust piping - Google Patents

Removing method for ammonium chloride stuck and deposited on cvd exhaust piping

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Publication number
JP2003209100A
JP2003209100A JP2002006245A JP2002006245A JP2003209100A JP 2003209100 A JP2003209100 A JP 2003209100A JP 2002006245 A JP2002006245 A JP 2002006245A JP 2002006245 A JP2002006245 A JP 2002006245A JP 2003209100 A JP2003209100 A JP 2003209100A
Authority
JP
Japan
Prior art keywords
deposited
gas
pipe
piping
stuck
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002006245A
Other languages
Japanese (ja)
Inventor
Junji Itagaki
純司 板垣
Akitake Kamei
明剛 亀井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TOKURA KOGYO KK
Original Assignee
TOKURA KOGYO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TOKURA KOGYO KK filed Critical TOKURA KOGYO KK
Priority to JP2002006245A priority Critical patent/JP2003209100A/en
Publication of JP2003209100A publication Critical patent/JP2003209100A/en
Pending legal-status Critical Current

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a removing method for NH<SB>4</SB>Cl stuck and deposited on CVD device exhaust piping in which running costs can be reduced, a device operation rate can be improved and/or device costs can be reduced when implementing the formation of a nitride film (Si<SB>3</SB>N<SB>4</SB>film) by a CVD device. <P>SOLUTION: Inert gases heated and warmth-retained equal to or higher than the sublimation temperature of NH<SB>4</SB>Cl beforehand are introduced into the CVD device exhaust piping stuck and deposited with NH<SB>4</SB>Cl, or a piping temperature is raised and held equal to or higher than the sublimation temperature of NH<SB>4</SB>Cl. Thus, the stuck and deposited NH<SB>4</SB>Cl is heated equal to or higher than the sublimation temperature, dissociated to NH<SB>3</SB>gases and HCl gases and discharged out of piping. Therefore, when removing the NH<SB>4</SB>Cl stuck and deposited on exhaust piping of the DVD device, it is not necessary to remove exhaust piping integrated to the CVD device. Thus, since labor required for removing, cleaning and folding up piping can be saved, running costs can be reduced, and further, since auxiliary piping is not required, device costs can be reduced. <P>COPYRIGHT: (C)2003,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】ＣＶＤ装置において、半導体
ウエハ表面に窒化膜（Ｓｉ３Ｎ４膜）を膜付けする際
に、ＮＨ４Ｃｌが副生されＣＶＤ装置排気系配管内面へ
付着堆積する。本発明はＣＶＤ装置排気系配管内面に付
着堆積したＮＨ４Ｃｌを除去する方法に関するものであ
る。BACKGROUND OF THE INVENTION When depositing a nitride film (Si 3 N 4 film) on the surface of a semiconductor wafer in a CVD apparatus, NH 4 Cl is produced as a by-product and adheres to and deposits on the inner surface of the exhaust pipe of the CVD apparatus. The present invention relates to a method for removing NH 4 Cl attached and deposited on the inner surface of a CVD apparatus exhaust system pipe.

【０００２】[0002]

【従来の技術】ＣＶＤ装置の高温拡散炉中で、半導体ウ
エハの表面に窒化膜（Ｓｉ３Ｎ４膜）を成長させて膜付
けする際に、副生されたＮＨ４Ｃｌは、ＣＶＤ装置排気
系配管内面に付着堆積する。この付着堆積したＮＨ４Ｃ
ｌを除去するために、排気系配管をＣＶＤ装置から取り
外して、配管内面に付着堆積しているＮＨ４Ｃｌを水洗
などにより除去している。さらに、最近では、排気系配
管を約１５０℃に加熱保温して、ＮＨ４Ｃｌの析出を最
小限にして、配管内面への付着を防止している。2. Description of the Related Art When a nitride film (Si 3 N 4 film) is grown and deposited on the surface of a semiconductor wafer in a high temperature diffusion furnace of a CVD device, NH 4 Cl produced as a by-product is exhausted from the CVD device. Accumulates and accumulates on the inner surface of system piping. This adhered and deposited NH 4 C
In order to remove 1, the exhaust system pipe is removed from the CVD apparatus, and NH 4 Cl adhering and depositing on the inner surface of the pipe is removed by washing with water or the like. Furthermore, recently, the exhaust system piping is heated and kept at a temperature of about 150 ° C. to minimize the precipitation of NH 4 Cl and prevent the adhesion to the inner surface of the piping.

【０００３】しかし、ＮＨ４Ｃｌの除去のために、配管
を取り外して、クリーニングするには、かなりの手間・
隙を要するので、ランニングコストが嵩むことになる。
しかも、装置の稼動を休止しなければならず、装置稼働
率の低下を招くことになる。なお、装置稼働率の低下を
最小限にするために予備配管を準備すれば、装置コス
ト、すなわち、イニシャルコストが嵩むことになる。However, in order to remove NH 4 Cl, it takes a lot of time and labor to remove and clean the piping.
Since it requires a gap, running costs will increase.
Moreover, the operation of the apparatus must be stopped, which leads to a decrease in the apparatus operating rate. If the preliminary piping is prepared in order to minimize the decrease in the operating rate of the device, the device cost, that is, the initial cost will increase.

【０００４】[0004]

【発明が解決しようとする課題】本発明は、上記従来技
術の課題、すなわち、ＣＶＤ装置による窒化膜（Ｓｉ３
Ｎ４膜）の膜付けの実施にあたり、ランニングコストの
節減、装置稼働率の向上および／または装置コストの低
減が図れるようなＣＶＤ装置排気系配管に付着堆積した
ＮＨ４Ｃｌの除去方法を確立することを目的とする。SUMMARY OF THE INVENTION The present invention has the above-mentioned problems of the prior art, namely, a nitride film (Si 3
(N 4 film) is established, a method for removing NH 4 Cl deposited and deposited on the CVD device exhaust system pipe is established so that running cost can be reduced, device operating rate can be improved and / or device cost can be reduced. The purpose is to

【０００５】[0005]

【課題を解決するための手段】本発明は、上記目的を達
成するためになされたもので、本発明の第１のＣＶＤ装
置排気系配管に付着堆積したＮＨ４Ｃｌの除去方法は、
ＮＨ４Ｃｌが付着堆積したＣＶＤ装置排気系配管内に、
予め、３４０℃以上に加熱保温された不活性ガスを導入
して、付着堆積したＮＨ４ＣｌをＮＨ３ガスとＨＣｌガ
スに解離させ、該ガスを該配管内から排出させることを
特徴とするものである。そして、本発明の第２のＣＶＤ
装置排気系配管に付着堆積したＮＨ４Ｃｌの除去方法
は、ＮＨ４Ｃｌが付着堆積したＣＶＤ装置排気系配管を
３４０℃以上に加熱保温して、付着堆積したＮＨ４Ｃｌ
をＮＨ３ガスとＨＣｌガスに解離させた後、該配管内に
不活性ガスを導入して、前記ＮＨ３ガスとＨＣｌガスを
該配管内から排出させることを特徴とするものである。The present invention has been made in order to achieve the above object, and a method for removing NH 4 Cl deposited and deposited on a first exhaust pipe of a CVD apparatus according to the present invention is
In the exhaust system piping of the CVD device where NH 4 Cl is adhered and deposited,
In advance, an inert gas heated and kept at a temperature of 340 ° C. or higher is introduced to dissociate the deposited NH 4 Cl into NH 3 gas and HCl gas, and discharge the gas from the pipe. Is. And the second CVD of the present invention
NH 4 Cl method for removing the adhered deposited device exhaust system piping, NH 4 Cl is heated kept adhering deposited CVD apparatus exhaust system piping 340 ° C. or higher, deposition deposited NH 4 Cl
Is dissociated into NH 3 gas and HCl gas, an inert gas is introduced into the pipe, and the NH 3 gas and HCl gas are discharged from the pipe.

【０００６】[0006]

【作用】高温（４５０〜８５０）のＣＶＤ装置の拡散炉
中で、半導体ウエハの表面にＳｉ３Ｎ４膜を成長させ膜
付けする際、拡散炉内にＳｉＣｌ２Ｈ２ガスおよびＮＨ
３ガスを導入すると ３ＳｉＣｌ２Ｈ２＋４ＮＨ３→Ｓｉ３Ｎ４＋６ＨＣｌ＋６Ｈ２ ・・・・ なる化学反応が生じる。式の化学反応によって、副生
されたＨＣｌガスと最初に導入したＮＨ３ガスとが、排
気配管を通って排気される際に、排気配管内で式に示
す化学反応を起こしてＮＨ４Ｃｌを析出し、排気配管内
面に付着堆積する。 ＨＣｌ＋ＮＨ３→ＮＨ４Ｃｌ ・・・・ Operation: High temperature (450-850) diffusion furnace for CVD equipment
On the surface of the semiconductor waferThreeNFourGrowing film
When attaching, SiCl in the diffusion furnaceTwoHTwoGas and NH
ThreeWhen gas is introduced     3SiClTwoHTwo+ 4NHThree→ SiThreeNFour+ 6HCl + 6HTwo  ... The following chemical reaction occurs. By-product by chemical reaction of formula
HCl gas and NH introduced firstThreeGas and exhaust
When exhausted through the air pipe, the formula is shown in the exhaust pipe.
A chemical reaction causes NHFourCl is deposited and in the exhaust pipe
Adheres and deposits on surfaces. HCl + NHThree→ NHFourCl ...

【０００７】このＮＨ４Ｃｌは３３７．８℃で昇華し
て、ＮＨ３ガスとＨＣｌガスとに解離する性質を有して
おり、本発明はこの性質を利用したものである。すなわ
ち、第１の発明はＮＨ４Ｃｌが付着堆積したＣＶＤ装置
排気系配管内に、予め、ＮＨ４Ｃｌの昇華温度以上に加
熱保温した不活性ガス例えば、Ｎ２ガスを導入して、付
着堆積したＮＨ４Ｃｌを昇華温度以上にＮ２ガスにて加
温し、ＮＨ３ガスとＨＣｌガスに解離して、該ガスを該
配管内から排出させようとするものである。また、第２
の発明はＮＨ４Ｃｌが付着堆積したＣＶＤ装置排気系配
管を昇華温度以上に加熱保温して、付着堆積したＮＨ４
ＣｌをＮＨ３ガスとＨＣｌガスに解離させた後、該配管
内にＮ２などの不活性ガスを導入して、前記ＮＨ３ガス
とＨＣｌガスを該配管内から排出させようとするもので
ある。したがって、本発明は、ＣＶＤ装置に組み込まれ
ている排気系配管を取り外すことなく実施できるため、
配管の取り外しや組み込みのための手間、隙が省けるの
で、ランニングコストの節減がはかれる。また、予備配
管を必要としないので装置コストの低減を図ることがで
きる。This NH 4 Cl has the property of sublimating at 337.8 ° C. and dissociating into NH 3 gas and HCl gas, and the present invention utilizes this property. That is, the first invention is to deposit and deposit an inert gas, such as N 2 gas, which has been heated and kept at a temperature equal to or higher than the sublimation temperature of NH 4 Cl in advance in the exhaust pipe of the CVD apparatus where NH 4 Cl is deposited and deposited. The above NH 4 Cl is heated with N 2 gas to a temperature not lower than the sublimation temperature to dissociate into NH 3 gas and HCl gas, and the gas is to be discharged from the pipe. Also, the second
The invention by heating kept the CVD apparatus exhaust system piping NH 4 Cl is adhered deposited above the sublimation temperature, NH 4 attached deposited
After dissociating Cl into NH 3 gas and HCl gas, an inert gas such as N 2 is introduced into the pipe to try to discharge the NH 3 gas and HCl gas from the pipe. . Therefore, the present invention can be carried out without removing the exhaust system piping incorporated in the CVD apparatus,
Since the time and labor for removing and installing the pipes can be saved, running costs can be reduced. In addition, the cost of the apparatus can be reduced because no spare piping is required.

【０００８】[0008]

【発明の実施の形態】DETAILED DESCRIPTION OF THE INVENTION

【実施例１】第１の発明の実施例として、図１に示すよ
うに、配管内面にＮＨ４Ｃｌが付着堆積した３インチの
配管１を用意し、その一端から予めヒータ２ａにて３５
０℃に加熱されたＮ２ガスを配管温度が３５０℃になる
まで流し続け、他端に連接したスクラバ３内に排気し
た。配管１全体が３５０℃になった時点でＮ２ガスの配
管１内への給気をやめて、配管１を取り外して縦割り
し、その内面を観察してＮＨ４Ｃｌが付着してないこと
を確認した。[Embodiment 1] As an embodiment of the first invention, as shown in FIG. 1, a 3-inch pipe 1 having NH 4 Cl attached and deposited on the inner surface of the pipe is prepared.
The N 2 gas heated to 0 ° C. was kept flowing until the pipe temperature reached 350 ° C., and was exhausted into the scrubber 3 connected to the other end. When the temperature of the entire pipe 1 reached 350 ° C., the supply of N 2 gas into the pipe 1 was stopped, the pipe 1 was removed and vertically split, and the inner surface was observed to confirm that NH 4 Cl did not adhere. confirmed.

【０００９】[0009]

【実施例２】第２の発明の実施例として、図２に示すよ
うに、第１の発明の実施例と同様に配管内面にＮＨ４Ｃ
ｌが付着堆積した３インチの配管１を用意し、該配管１
の外面にヒータ２ｂを巻き付けて、配管１全体を３５０
℃に加熱保持したまま、ボンベ５から配管１内へＮ２ガ
スを１０分間流し続け、配管１の端部に連接したスクラ
バ３内に排気した。次いで配管１を取り外して縦割り
し、その内面を観察してＮＨ４Ｃｌが付着してないこと
を確認した。Second Embodiment As an embodiment of the second invention, as shown in FIG. 2, NH 4 C is formed on the inner surface of the pipe as in the embodiment of the first invention.
Prepare a 3-inch pipe 1 on which 1 is attached and deposited.
Wrap the heater 2b around the outer surface of the
With the temperature kept at 0 ° C., N 2 gas was continuously flowed from the cylinder 5 into the pipe 1 for 10 minutes and exhausted into the scrubber 3 connected to the end of the pipe 1. Next, the pipe 1 was removed and vertically divided, and the inner surface was observed to confirm that NH 4 Cl was not attached.

【００１０】[0010]

【発明の効果】以上説明したように、本発明によれば、
ＣＶＤ装置の排気系配管に付着堆積したＮＨ４Ｃｌの除
去にあたり、ＣＶＤ装置に組み込まれた排気系配管を取
り外す必要がないので、配管の取り外し、クリーニング
および配管の組み立てに要する手間・隙を省くことがで
きるため、ランニングコストの節減を図ることができ、
また、予備配管を必要としないので、装置コストの低減
を図ることができる。As described above, according to the present invention,
When removing NH 4 Cl deposited on the exhaust system piping of the CVD apparatus, it is not necessary to remove the exhaust system piping incorporated in the CVD apparatus, so the labor and gaps required for pipe removal, cleaning, and pipe assembly can be saved. Therefore, running costs can be reduced.
Further, since the preliminary piping is not required, the device cost can be reduced.

【００１１】[0011]

【図面の簡単な説明】[Brief description of drawings]

【図１】 本発明の請求項１の実施例を示す図FIG. 1 is a diagram showing an embodiment of claim 1 of the present invention.

【図２】 本発明の請求項２の実施例を示す図FIG. 2 is a diagram showing an embodiment of claim 2 of the present invention.

【符号の説明】[Explanation of symbols]

１ ＮＨ４Ｃｌが付着堆積した３インチ配管 ２ａ ヒータ ２ｂ ヒータ ３ スクラバ ４ Ｎ２ボンベ1 3 inch pipe with NH 4 Cl attached and deposited 2a Heater 2b Heater 3 Scrubber 4 N 2 cylinder

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】 塩化アンモニウム（ＮＨ４Ｃｌ）が付着
堆積したＣＶＤ装置排気系配管内に、予め、３４０℃以
上に加熱保温された不活性ガスを導入して、付着堆積し
た塩化アンモニウム（ＮＨ４Ｃｌ）をＮＨ３ガスとＨＣ
ｌガスに解離させ、該ガスを該配管内から排出させるこ
とを特徴とするＣＶＤ装置排気系配管に付着堆積した塩
化アンモニウム（ＮＨ４Ｃｌ）の除去方法1. An inert gas preliminarily heated and kept at 340 ° C. or higher is introduced into the exhaust pipe of the CVD apparatus in which ammonium chloride (NH 4 Cl) is deposited and deposited, and the deposited ammonium chloride (NH 4 Cl 4 Cl) with NH 3 gas and HC
method for removing ammonium chloride (NH 4 Cl) deposited and deposited on a CVD apparatus exhaust system pipe, characterized in that it is dissociated into 1 gas and discharged from the pipe. 【請求項２】 塩化アンモニウム（ＮＨ４Ｃｌ）が付着
堆積したＣＶＤ装置排気系配管を３４０℃以上に加熱保
温して、付着堆積した塩化アンモニウム（ＮＨ４Ｃｌ）
をＮＨ３ガスとＨＣｌガスに解離させた後、該配管内に
不活性ガスを導入して、前記ＮＨ３ガスとＨＣｌガスを
該配管内から排出させることを特徴とするＣＶＤ装置排
気系配管に付着堆積した塩化アンモニウム（ＮＨ４Ｃ
ｌ）の除去方法Wherein ammonium chloride is heated kept warm CVD apparatus exhaust system piping ammonium chloride (NH 4 Cl) is attached deposited 340 ° C. or higher, adhering deposition (NH 4 Cl)
After dissociating the gas into NH 3 gas and HCl gas, an inert gas is introduced into the pipe to discharge the NH 3 gas and HCl gas from the pipe. Ammonium chloride (NH 4 C) deposited and deposited
l) Removal method
JP2002006245A 2002-01-15 2002-01-15 Removing method for ammonium chloride stuck and deposited on cvd exhaust piping Pending JP2003209100A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002006245A JP2003209100A (en) 2002-01-15 2002-01-15 Removing method for ammonium chloride stuck and deposited on cvd exhaust piping

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002006245A JP2003209100A (en) 2002-01-15 2002-01-15 Removing method for ammonium chloride stuck and deposited on cvd exhaust piping

Publications (1)

Publication Number Publication Date
JP2003209100A true JP2003209100A (en) 2003-07-25

Family

ID=27645069

Family Applications (1)

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Country Link
JP (1) JP2003209100A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006013957A1 (en) * 2004-08-06 2006-02-09 Mitsubishi Chemical Corporation NITRIDE SEMICONDUCTOR SINGLE CRYSTAL INCLUDING Ga, METHOD FOR MANUFACTURING THE SAME, AND SUBSTRATE AND DEVICE USING THE CRYSTAL
WO2018070284A1 (en) * 2016-10-14 2018-04-19 株式会社Ihi Reheating collection device for gas phase process

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54160172A (en) * 1978-06-09 1979-12-18 Hitachi Ltd Manufacture of semiconductor device and cvd device used for the said manufacture
JPH08172083A (en) * 1994-12-16 1996-07-02 Ebara Corp By-product trap device and cleaning thereof
JPH08176829A (en) * 1994-12-26 1996-07-09 Nec Kansai Ltd Method for growing thin film and vacuum cvd device
JPH1032194A (en) * 1996-07-12 1998-02-03 Nippon Steel Corp Semiconductor manufacturing device
JPH10154702A (en) * 1996-11-25 1998-06-09 Hitachi Ltd Manufacturing method of semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54160172A (en) * 1978-06-09 1979-12-18 Hitachi Ltd Manufacture of semiconductor device and cvd device used for the said manufacture
JPH08172083A (en) * 1994-12-16 1996-07-02 Ebara Corp By-product trap device and cleaning thereof
JPH08176829A (en) * 1994-12-26 1996-07-09 Nec Kansai Ltd Method for growing thin film and vacuum cvd device
JPH1032194A (en) * 1996-07-12 1998-02-03 Nippon Steel Corp Semiconductor manufacturing device
JPH10154702A (en) * 1996-11-25 1998-06-09 Hitachi Ltd Manufacturing method of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006013957A1 (en) * 2004-08-06 2006-02-09 Mitsubishi Chemical Corporation NITRIDE SEMICONDUCTOR SINGLE CRYSTAL INCLUDING Ga, METHOD FOR MANUFACTURING THE SAME, AND SUBSTRATE AND DEVICE USING THE CRYSTAL
US8142566B2 (en) 2004-08-06 2012-03-27 Mitsubishi Chemical Corporation Method for producing Ga-containing nitride semiconductor single crystal of BxAlyGazIn1-x-y-zNsPtAs1-s-t (0<=x<=1, 0<=y<1, 0<z<=1, 0<s<=1 and 0<=t<1) on a substrate
WO2018070284A1 (en) * 2016-10-14 2018-04-19 株式会社Ihi Reheating collection device for gas phase process
US10507414B2 (en) 2016-10-14 2019-12-17 Ihi Corporation Reheating collection device for gas phase process

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