JP2003197976A - Light emitting diode - Google Patents
Light emitting diodeInfo
- Publication number
- JP2003197976A JP2003197976A JP2001396258A JP2001396258A JP2003197976A JP 2003197976 A JP2003197976 A JP 2003197976A JP 2001396258 A JP2001396258 A JP 2001396258A JP 2001396258 A JP2001396258 A JP 2001396258A JP 2003197976 A JP2003197976 A JP 2003197976A
- Authority
- JP
- Japan
- Prior art keywords
- coating material
- led chip
- light
- led
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、紫外光等の短波
長光を発光する発光ダイオードチップを備えた発光ダイ
オードに係り、特に、エネルギーの大きい短波長光によ
る発光ダイオードチップのコーティング材の劣化を防止
でき、コーティング材の劣化に起因する光度の減少、色
調変化を生じることのない発光ダイオードに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode provided with a light emitting diode chip that emits short wavelength light such as ultraviolet light, and particularly to deterioration of a coating material of the light emitting diode chip due to short wavelength light having large energy. The present invention relates to a light emitting diode that can be prevented and that does not cause a decrease in luminous intensity and a change in color tone due to deterioration of a coating material.
【０００２】[0002]
【従来の技術】図４に示すように、従来の発光ダイオー
ド（以下、ＬＥＤと称する）60は、発光ダイオードチッ
プ搭載用の第１のリードフレーム62に、その底面から上
方に向かって孔径が徐々に拡大する略漏斗形状の凹部を
設けると共に該凹部内面を反射面と成してリフレクタ64
を形成し、該リフレクタ64の底面に、紫外光を発光する
発光ダイオードチップ（以下、ＬＥＤチップと称する）
66をダイボンドすることにより、上記第１のリードフレ
ーム62と、ＬＥＤチップ66底面の一方の電極（図示せ
ず）とを電気的に接続している。また、第２のリードフ
レーム68と、上記ＬＥＤチップ66上面の他方の電極（図
示せず）とをボンディングワイヤ70を介して電気的に接
続して成る。2. Description of the Related Art As shown in FIG. 4, a conventional light emitting diode (hereinafter, referred to as LED) 60 has a first lead frame 62 for mounting a light emitting diode chip, and a hole diameter gradually increases from the bottom surface to an upper side. A substantially funnel-shaped concave portion that expands to the inside is provided, and the inner surface of the concave portion is formed as a reflecting surface to form a reflector 64.
And a light emitting diode chip (hereinafter, referred to as an LED chip) that emits ultraviolet light on the bottom surface of the reflector 64.
By die-bonding 66, the first lead frame 62 and one electrode (not shown) on the bottom surface of the LED chip 66 are electrically connected. Further, the second lead frame 68 and the other electrode (not shown) on the upper surface of the LED chip 66 are electrically connected via a bonding wire 70.
【０００３】上記ＬＥＤチップ66の上面及び側面は、リ
フレクタ64内に充填された透光性エポキシ樹脂等のコー
ティング材72によって被覆・封止されており、また、上
記コーティング材72中には、ＬＥＤチップ66から発光さ
れた紫外光を所定波長の可視光に変換する波長変換用の
蛍光体74が分散状態で混入されている。さらに、上記Ｌ
ＥＤチップ66、コーティング材72、第１のリードフレー
ム62及び第２のリードフレーム68の上端部は、透光性エ
ポキシ樹脂等より成り、先端に凸レンズ部76を有する外
装体78によって被覆・封止されている。The upper surface and the side surface of the LED chip 66 are covered and sealed with a coating material 72 such as a translucent epoxy resin filled in the reflector 64, and the coating material 72 contains an LED. A wavelength conversion phosphor 74 for converting the ultraviolet light emitted from the chip 66 into visible light having a predetermined wavelength is mixed in a dispersed state. Furthermore, the above L
The upper ends of the ED chip 66, the coating material 72, the first lead frame 62, and the second lead frame 68 are made of a translucent epoxy resin or the like, and are covered and sealed with an exterior body 78 having a convex lens portion 76 at the tip. Has been done.
【０００４】而して、上記第１のリードフレーム62及び
第２のリードフレーム68を介してＬＥＤチップ66に電圧
が印加されると、ＬＥＤチップ66が発光して紫外光が放
射され、該紫外光が上記コーティング材72中の蛍光体74
に照射されることにより、紫外光が所定色の可視光に波
長変換され、該可視光が外装体78の凸レンズ部76によっ
て集光されて外部へ放射されるようになっている。When a voltage is applied to the LED chip 66 through the first lead frame 62 and the second lead frame 68, the LED chip 66 emits light and ultraviolet light is emitted, and the ultraviolet light is emitted. The light is a phosphor 74 in the coating material 72.
The ultraviolet light is wavelength-converted into visible light of a predetermined color by irradiating the visible light, and the visible light is condensed by the convex lens portion 76 of the exterior body 78 and emitted to the outside.
【０００５】[0005]
【発明が解決しようとする課題】上記の通り、従来のＬ
ＥＤ60にあっては、ＬＥＤチップ66を被覆・封止するコ
ーティング材72がエポキシ樹脂等の有機材料で構成され
ているが、この有機材料は、ＬＥＤチップ66から発光さ
れた紫外光の一部を吸収してしまい、その結果、エネル
ギーの大きい紫外光によってコーティング材72が劣化・
変色し、ＬＥＤ60の光度減少や色調の変化を生じさせて
いた。As described above, the conventional L
In the ED60, the coating material 72 that covers and seals the LED chip 66 is made of an organic material such as epoxy resin. This organic material partially absorbs the ultraviolet light emitted from the LED chip 66. As a result, the coating material 72 deteriorates due to high-energy ultraviolet light.
Discoloration occurred, causing a decrease in LED60 brightness and a change in color tone.
【０００６】この発明は、従来の上記問題点に鑑みて案
出されたものであり、その目的とするところは、エネル
ギーの大きい紫外光等の短波長光によるコーティング材
の劣化を防止でき、コーティング材の劣化に起因する光
度の減少や色調変化を生じることのないＬＥＤを実現す
ることにある。The present invention has been devised in view of the above-mentioned conventional problems, and an object thereof is to prevent deterioration of a coating material due to short-wavelength light such as ultraviolet light having high energy, and to provide a coating. It is to realize an LED that does not cause a decrease in luminous intensity or a change in color tone due to deterioration of a material.
【０００７】[0007]
【課題を解決するための手段】上記の目的を達成するた
め、この発明に係る発光ダイオードは、基体の一面上に
ＬＥＤチップを配置すると共に、該ＬＥＤチップを透光
性を備えたコーティング材で被覆して成る発光ダイオー
ドにおいて、上記コーティング材を無機材料で構成した
ことを特徴とする。上記基体としては、例えば、リード
フレームが該当し、この場合、リードフレームに設けた
凹部内面を反射面と成して形成したリフレクタの底面上
に、上記ＬＥＤチップを配置すると共に、該ＬＥＤチッ
プを、上記リフレクタ内に充填した無機材料より成るコ
ーティング材で被覆すれば良い。尚、上記基体は、リー
ドフレームに限定されず、ＬＥＤチップを配置可能なあ
らゆる部材を含む。In order to achieve the above object, a light emitting diode according to the present invention has an LED chip disposed on one surface of a substrate, and the LED chip is coated with a translucent coating material. In the light emitting diode formed by coating, the coating material is composed of an inorganic material. The base body is, for example, a lead frame, and in this case, the LED chip is arranged on the bottom surface of a reflector formed by forming the inner surface of the recess provided in the lead frame as a reflection surface, and the LED chip is attached. It may be covered with a coating material made of an inorganic material filled in the reflector. The base body is not limited to the lead frame and includes any member on which the LED chip can be arranged.
【０００８】本発明に係る発光ダイオードにあっては、
ＬＥＤチップを被覆するコーティング材が、短波長光を
殆ど吸収することがなく、また、短波長光を吸収したと
しても、分子結合力が強いため劣化することが殆どない
無機材料で構成したので、エネルギーの大きい短波長光
によるコーティング材の劣化・変色が防止され、コーテ
ィング材の劣化に起因したＬＥＤの光度減少や色調変化
を生じることがない。In the light emitting diode according to the present invention,
Since the coating material that covers the LED chip hardly absorbs short-wavelength light, and even if it absorbs short-wavelength light, it is composed of an inorganic material that hardly deteriorates because of strong molecular bonding force. Deterioration and discoloration of the coating material due to high-energy short-wavelength light are prevented, and there is no reduction in the luminous intensity or color tone change of the LED due to the deterioration of the coating material.
【０００９】上記無機材料としては、例えば、ガラスが
該当する。As the above-mentioned inorganic material, for example, glass is applicable.
【００１０】[0010]
【発明の実施の形態】以下、図面に基づき、本発明に係
るＬＥＤの実施形態を説明する。図１は、本発明に係る
第１のＬＥＤ10を示す断面図であり、この第１のＬＥＤ
10は、ＬＥＤチップ搭載用の第１のリードフレーム12
に、その底面から上方に向かって孔径が徐々に拡大する
略漏斗形状の凹部を設けると共に該凹部内面を反射面と
成してリフレクタ14を形成し、該リフレクタ14の底面上
に、主発光波長が４００ｎｍ以下のＬＥＤチップ16をダ
イボンドにより接続固定し、以て、上記第１のリードフ
レーム12と、ＬＥＤチップ16底面の一方の電極（図示せ
ず）とを電気的に接続している。また、第２のリードフ
レーム18と、上記ＬＥＤチップ16上面の他方の電極（図
示せず）とをボンディングワイヤ20を介して電気的に接
続して成る。上記ＬＥＤチップ16は、例えば、窒化ガリ
ウム系半導体結晶で構成することができる。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of an LED according to the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view showing a first LED 10 according to the present invention.
10 is the first lead frame 12 for mounting the LED chip
In addition, a substantially funnel-shaped concave portion whose hole diameter gradually increases from the bottom surface upward is provided, and the inner surface of the concave portion serves as a reflecting surface to form the reflector 14, and the main emission wavelength is formed on the bottom surface of the reflector 14. The LED chip 16 having a thickness of 400 nm or less is connected and fixed by die bonding, so that the first lead frame 12 and one electrode (not shown) on the bottom surface of the LED chip 16 are electrically connected. Further, the second lead frame 18 and the other electrode (not shown) on the upper surface of the LED chip 16 are electrically connected via a bonding wire 20. The LED chip 16 can be made of, for example, a gallium nitride based semiconductor crystal.
【００１１】上記ＬＥＤチップ16の上面及び側面は、リ
フレクタ14内に充填されたコーティング材22によって被
覆・封止されており、また、該コーティング材22中に
は、上記ＬＥＤチップ16から発光された４００ｎｍ以下
の紫外光を所定波長の可視光に変換する波長変換用の蛍
光体24が分散状態で混入されている。もっとも上記蛍光
体24は、紫外光を可視光に変換するものだけに限定され
ず、要するに、ＬＥＤチップ16の発光を所定波長の光に
変換できるものであれば良い。上記蛍光体24としては、
例えば以下の組成のものを用いることができる。赤色可
視光に変換する赤色蛍光体として、例えばＹ（ＰＶ）Ｏ
4：Ｅｕ、ＹＶＯ4：Ｅｕ、３．５ＭｇＯ・０．５ＭｇＦ
２・ＧｅＯ２：Ｍｇ、（ＳｒＭｇ）3（ＰＯ4）：Ｓｎ、
Ｙ２Ｏ３：Ｅｕ、ＣａＳｉＯ３：Ｐｂ，Ｍｎ、Ｙ２Ｏ２
Ｓ：Ｅｕ等が挙げられ、これら１種若しくは２種以上の
混合物として使用される。緑色可視光に変換する緑色蛍
光体として、例えばＺｎ２ＳｉＯ4：Ｍｎ、（ＣｅＴｂ
Ｍｎ）ＭｇＡｌ１１Ｏ１９、ＬａＰＯ4：Ｃｅ，Ｔｂ、
（ＣｅＴｂ）ＭｇＡｌ１１Ｏ１９、Ｙ２ＳｉＯ５：Ｃ
ｅ，Ｔｂ、ＺｎＳ：Ｃｕ，Ａｌ、ＺｎＳ：Ｃｕ：Ａｕ：
Ａｌ、（Ｚｎ，Ｃｄ）Ｓ：Ｃｕ：Ａｌ、ＳｒＡｌ
２Ｏ４：Ｅｕ，Ｄｙ、Ｓｒ４Ａｌ１４Ｏ２５：Ｅｕ，Ｄ
ｙ等が挙げられ、これら１種若しくは２種以上の混合物
として使用される。更に、青色可視光に変換する青色蛍
光体としては、（ＳｒＭｇ）２Ｐ２Ｏ7：Ｅｕ、Ｓｒ２
Ｐ２Ｏ7：Ｅｕ、Ｓｒ２Ｐ２Ｏ７：Ｓｎ、Ｓｒ５（Ｐ
Ｏ4）３Ｃｌ：Ｅｕ、（ＳｒＣａＢａ）５（ＰＯ4）３Ｃ
ｌ：Ｅｕ、ＢａＭｇ２Ａｌ１６Ｏ２７：Ｅｕ、ＣａＷＯ
4、ＣａＷＯ4：Ｐｂ青色蛍光体、ＺｎＳ：Ａｇ，Ｃｌ、
ＺｎＳ：Ａｇ，Ａｌ等が挙げられ、これら１種若しくは
２種以上の混合物として使用される。これら３色の蛍光
体を適宜選択・混合して用いることで、種々の色の発色
が可能となる。The upper and side surfaces of the LED chip 16 are covered and sealed with a coating material 22 filled in the reflector 14, and the coating material 22 emits light from the LED chip 16. A phosphor 24 for wavelength conversion that converts ultraviolet light of 400 nm or less into visible light of a predetermined wavelength is mixed in a dispersed state. Of course, the phosphor 24 is not limited to one that converts ultraviolet light into visible light, and in short, any phosphor that can convert the light emission of the LED chip 16 into light of a predetermined wavelength may be used. As the phosphor 24,
For example, the following compositions can be used. As a red phosphor that converts red visible light, for example, Y (PV) O
4 : Eu, YVO 4 : Eu, 3.5MgO.0.5MgF
2・ GeO 2 : Mg, (SrMg) 3 (PO 4 ): Sn,
Y 2 O 3 : Eu, CaSiO 3 : Pb, Mn, Y 2 O 2
S: Eu, etc. may be mentioned, and they may be used alone or as a mixture of two or more. As a green phosphor that converts into green visible light, for example, Zn 2 SiO 4 : Mn, (CeTb
Mn) MgAl 11 O 19, LaPO 4: Ce, Tb,
(CeTb) MgAl 11 O 19 , Y 2 SiO 5 : C
e, Tb, ZnS: Cu, Al, ZnS: Cu: Au:
Al, (Zn, Cd) S: Cu: Al, SrAl
2 O 4 : Eu, Dy, Sr 4 Al 14 O 25 : Eu, D
y and the like are used, and they are used as a mixture of one kind or two or more kinds. Further, as a blue phosphor that converts into blue visible light, (SrMg) 2 P 2 O 7 : Eu, Sr 2
P 2 O 7 : Eu, Sr 2 P 2 O 7 : Sn, Sr 5 (P
O 4 ) 3 Cl: Eu, (SrCaBa) 5 (PO 4 ) 3 C
1: Eu, BaMg 2 Al 16 O 27 : Eu, CaWO
4 , CaWO 4 : Pb blue phosphor, ZnS: Ag, Cl,
ZnS: Ag, Al and the like can be mentioned, and they are used alone or as a mixture of two or more. By appropriately selecting and mixing these three-color phosphors, various colors can be produced.
【００１２】上記コーティング材22は、ガラス等の無機
材料で構成されている。この無機材料は、エポキシ樹脂
等の有機材料とは異なり、紫外光等のエネルギーの大き
い短波長光を殆ど吸収することがなく、また、短波長光
を吸収したとしても、分子結合力が強いため劣化するこ
とが殆どない。尚、短波長光としては、４００ｎｍ以下
の紫外光のみに限定されず、例えば４１０ｎｍの青色可
視光等、４００ｎｍ近傍の可視光も含まれる。The coating material 22 is made of an inorganic material such as glass. Unlike organic materials such as epoxy resin, this inorganic material hardly absorbs short-wavelength light with large energy such as ultraviolet light, and even if it absorbs short-wavelength light, it has a strong molecular bonding force. It hardly deteriorates. The short-wavelength light is not limited to ultraviolet light having a wavelength of 400 nm or less, and includes visible light in the vicinity of 400 nm, such as blue visible light having a wavelength of 410 nm.
【００１３】コーティング材22をガラスで構成する場合
には、比較的低温でのガラス合成が可能なゾルゲル法を
用いて作製される、いわゆるゾルゲルガラスを用いるこ
とができる。ゾルゲル法は、例えば、金属アルコキシド
や金属アセチルアセトネート、金属カルボキシレート等
の金属有機化合物の加水分解、重合反応を利用して金属
−酸素の結合からできた重合体を作るものである。例え
ば、一般式M(OR)n（M:金属元素、R:アルキル基、ｎ：金
属の酸化数）の金属有機化合物、水（加水分解のた
め）、溶媒としてメタノール、DMF（ヂメチルフォルム
アミド）、加水分解・重合反応の調整剤としてアンモニ
アなどを調合した均質な透明なゾル溶液を作り、このゾ
ル溶液を加水分解、重合反応させることにより、ゲル化
し、硬いガラス状の無機質膜形成が生じてゾルゲルガラ
スが形成される。アルキル基（Ｒ）等の組成を適宜選定
することにより、コーティング材22に適したゾルゲルガ
ラスが得られる。When the coating material 22 is made of glass, it is possible to use so-called sol-gel glass, which is produced by the sol-gel method that enables glass synthesis at a relatively low temperature. The sol-gel method is, for example, to make a polymer formed from a metal-oxygen bond by utilizing hydrolysis and polymerization reaction of a metal organic compound such as metal alkoxide, metal acetylacetonate, and metal carboxylate. For example, a metal organic compound of the general formula M (OR) n (M: metal element, R: alkyl group, n: oxidation number of metal), water (for hydrolysis), methanol as a solvent, DMF (dimethylformamide) ), A homogeneous transparent sol solution prepared by mixing ammonia, etc. as a modifier for the hydrolysis / polymerization reaction, and the sol solution is hydrolyzed and polymerized to cause gelation and formation of a hard glassy inorganic film. Sol-gel glass is formed. By properly selecting the composition of the alkyl group (R) and the like, a sol-gel glass suitable for the coating material 22 can be obtained.
【００１４】上記ＬＥＤチップ16、コーティング材22、
第１のリードフレーム12及び第２のリードフレーム18の
上端部は、透光性エポキシ樹脂等より成り、先端に凸レ
ンズ部26を有する外装体28によって被覆・封止されてい
る。The LED chip 16, the coating material 22,
The upper ends of the first lead frame 12 and the second lead frame 18 are made of a translucent epoxy resin or the like, and are covered and sealed with an exterior body 28 having a convex lens portion 26 at the tip.
【００１５】而して、上記第１のリードフレーム12及び
第２のリードフレーム18を介してＬＥＤチップ16に電圧
が印加されると、ＬＥＤチップ16が発光して紫外光が放
射され、該紫外光が上記コーティング材22中の蛍光体24
に照射されることにより、紫外光が所定色の可視光に波
長変換され、該可視光が外装体28の凸レンズ部26によっ
て集光されて外部へ放射されるのである。When a voltage is applied to the LED chip 16 via the first lead frame 12 and the second lead frame 18, the LED chip 16 emits light to emit ultraviolet light, and the ultraviolet light is emitted. The light is the phosphor 24 in the coating material 22.
The ultraviolet light is wavelength-converted into visible light of a predetermined color by irradiating the visible light, and the visible light is condensed by the convex lens portion 26 of the exterior body 28 and emitted to the outside.
【００１６】本発明の第１のＬＥＤ10にあっては、ＬＥ
Ｄチップ16の表面（上面及び側面）を被覆・封止するコ
ーティング材22を、無機材料で構成したことから、ＬＥ
Ｄチップ16から発光された紫外光を吸収することが殆ど
なく、また、紫外光を吸収したとしても、分子結合力が
強いため劣化することが殆どない。従って、エネルギー
の大きい紫外光によるコーティング材22の劣化・変色が
防止され、コーティング材22の劣化に起因したＬＥＤ10
の光度減少や色調変化を生じることがない。In the first LED 10 of the present invention, LE
Since the coating material 22 that covers and seals the surface (top surface and side surface) of the D chip 16 is made of an inorganic material, LE
The ultraviolet light emitted from the D chip 16 is hardly absorbed, and even if the ultraviolet light is absorbed, it is hardly deteriorated due to the strong molecular bonding force. Therefore, the deterioration / discoloration of the coating material 22 due to the ultraviolet light having a large energy is prevented, and the LED 10 caused by the deterioration of the coating material 22 is prevented.
There is no decrease in luminous intensity or change in color tone.
【００１７】図２は、本発明に係る第２のＬＥＤ30を示
すものであり、この第２のＬＥＤ30は、上記第１のＬＥ
Ｄ10のように蛍光体24をコーティング材22中に混入せ
ず、ＬＥＤチップ16を被覆・封止するコーティング材22
の表面上に、ＬＥＤチップ16から発光された紫外光を所
定波長の可視光に変換する波長変換用の蛍光体層32を被
着形成した点に特徴を有するものであり、その他の構成
は上記第１のＬＥＤ10と実質的に同一である。この第２
のＬＥＤ30にあっては、第１のリードフレーム12及び第
２のリードフレーム18を介してＬＥＤチップ16に電圧が
印加されると、ＬＥＤチップ16が発光して紫外光が放射
され、該紫外光が上記コーティング材22の表面上に被着
された蛍光体層32に照射されることにより、紫外光が所
定色の可視光に波長変換され、該可視光が外装体28の凸
レンズ部26によって集光されて外部へ放射されるのであ
る。FIG. 2 shows a second LED 30 according to the present invention, and the second LED 30 is the first LE described above.
A coating material 22 that covers and seals the LED chip 16 without mixing the phosphor 24 into the coating material 22 unlike D10.
Is characterized in that a phosphor layer 32 for wavelength conversion that converts the ultraviolet light emitted from the LED chip 16 into visible light of a predetermined wavelength is adhered and formed on the surface of the above. It is substantially the same as the first LED 10. This second
In the LED 30 of, when a voltage is applied to the LED chip 16 via the first lead frame 12 and the second lead frame 18, the LED chip 16 emits light to emit ultraviolet light, and the ultraviolet light is emitted. By irradiating the phosphor layer 32 deposited on the surface of the coating material 22, ultraviolet light is wavelength-converted into visible light of a predetermined color, and the visible light is collected by the convex lens portion 26 of the exterior body 28. It is illuminated and emitted to the outside.
【００１８】上記第２のＬＥＤ30において、コーティン
グ材22の表面上に蛍光体層32を被着形成したのはＬＥＤ
の光度の向上を図るためである。すなわち、上記第１の
ＬＥＤ10のように、蛍光体24がコーティング材22中に分
散状態で混入されている場合には、ＬＥＤチップ16から
放射された紫外光の一部が蛍光体24に当たらずにコーテ
ィング材22外部へ出射してしまうことがあるため、紫外
光から可視光への変換効率が良好でないと共に、コーテ
ィング材22内部の蛍光体24に当たって紫外光から変換さ
れた可視光の一部が、コーティング材22内部を透過して
コーティング材22外部へ出射するまでの間に他の蛍光体
24に当たって吸収されてしまうことがあり、その結果、
ＬＥＤの光度が不十分となる場合がある。また、蛍光体
24に当たらずにコーティング材22外部へ出射した紫外光
によって、透光性エポキシ樹脂等の有機材料で構成され
た外装体28が劣化する恐れもある。これに対し本発明に
係る第２のＬＥＤ30にあっては、コーティング材22の表
面上に蛍光体層32を被着形成したので、ＬＥＤチップ16
から放射されてコーティング材22を透過する紫外光は、
コーティング材22表面の蛍光体層32に必ず当たるため、
紫外光から可視光への変換効率が高くなり、また、蛍光
体層32で変換された可視光は、直ちに蛍光体層32を出射
して外装体28内部へ入射するため、可視光の取出し効率
も向上する。この結果、第２のＬＥＤ30は、上記第１の
ＬＥＤ10に比べてその光度を格段に向上させることがで
きる。また、上記の通り、紫外光から可視光への変換効
率が高くなるため、可視光へ変換されない紫外光によっ
て、有機材料で構成された外装体28が劣化することも防
止できる。In the second LED 30 described above, the phosphor layer 32 is adhered and formed on the surface of the coating material 22.
This is to improve the luminous intensity of. That is, when the phosphor 24 is mixed in the coating material 22 in a dispersed state like the first LED 10, part of the ultraviolet light emitted from the LED chip 16 does not hit the phosphor 24. Since it may be emitted to the outside of the coating material 22, the conversion efficiency from ultraviolet light to visible light is not good, and a part of the visible light converted from ultraviolet light hits the phosphor 24 inside the coating material 22. , Other phosphors before passing through the inside of the coating material 22 and exiting to the outside of the coating material 22.
It may be absorbed by hitting 24, and as a result,
The brightness of the LED may be insufficient. Also, phosphor
The ultraviolet light emitted to the outside of the coating material 22 without hitting the 24 may deteriorate the outer package 28 made of an organic material such as a translucent epoxy resin. On the other hand, in the second LED 30 according to the present invention, since the phosphor layer 32 is adhered and formed on the surface of the coating material 22, the LED chip 16
The ultraviolet light emitted from and transmitted through the coating material 22 is
Since it always hits the phosphor layer 32 on the surface of the coating material 22,
The conversion efficiency from ultraviolet light to visible light becomes high, and the visible light converted by the phosphor layer 32 immediately exits the phosphor layer 32 and enters the exterior body 28, so that the visible light extraction efficiency is high. Also improves. As a result, the light intensity of the second LED 30 can be remarkably improved as compared with the first LED 10. Further, as described above, since the conversion efficiency from ultraviolet light to visible light becomes high, it is possible to prevent the exterior body 28 made of an organic material from being deteriorated by the ultraviolet light which is not converted into visible light.
【００１９】図３は、本発明に係る表面実装型の第３の
ＬＥＤ40を示すものである。この第３のＬＥＤ40は、樹
脂等より成る略直方体形状の絶縁基板42と、ＬＥＤチッ
プ搭載用の第１のリードフレーム44と、第２のリードフ
レーム46を備えており、上記第１のリードフレーム44
は、上記絶縁基板42の表面から一方の側面を通って裏面
に至るまで延設され、また、第２のリードフレーム46
は、上記絶縁基板42の表面から他方の側面を通って裏面
に至るまで延設されている。上記第１のリードフレーム
44と第２のリードフレーム46の先端間及び後端間にはそ
れぞれ所定の間隙が設けられていて相互に電気絶縁され
ている。FIG. 3 shows a third surface mount LED 40 according to the present invention. The third LED 40 includes a substantially rectangular parallelepiped insulating substrate 42 made of resin or the like, a first lead frame 44 for mounting an LED chip, and a second lead frame 46. 44
Is extended from the front surface of the insulating substrate 42 to the back surface through one side surface, and the second lead frame 46
Are extended from the front surface of the insulating substrate 42 to the back surface through the other side surface. The first lead frame
Predetermined gaps are provided between the front end and the rear end of 44 and the second lead frame 46, respectively, and they are electrically insulated from each other.
【００２０】上記第１のリードフレーム44の先端部に
は、その底面から上方に向かって孔径が徐々に拡大する
略漏斗形状の凹部内面を反射面と成して形成したリフレ
クタ48が設けられており、該リフレクタ48の底面上に、
ＬＥＤチップ16をダイボンドにより接続固定することに
より、第１のリードフレーム44と、ＬＥＤチップ16底面
の一方の電極とが電気的に接続されている。また、第２
のリードフレーム46と、上記ＬＥＤチップ16上面の他方
の電極とがボンディングワイヤ20を介して電気的に接続
されている。At the tip of the first lead frame 44, there is provided a reflector 48 formed by forming a substantially funnel-shaped concave inner surface, whose inner diameter gradually increases upward from the bottom surface thereof, as a reflecting surface. On the bottom surface of the reflector 48,
By connecting and fixing the LED chip 16 by die bonding, the first lead frame 44 and one electrode on the bottom surface of the LED chip 16 are electrically connected. Also, the second
The lead frame 46 and the other electrode on the upper surface of the LED chip 16 are electrically connected via the bonding wire 20.
【００２１】上記ＬＥＤチップ16の上面及び側面は、上
記第２のＬＥＤ30と同様に、リフレクタ48内に充填され
たコーティング材22によって被覆・封止されると共に、
該コーティング材22の表面上に、ＬＥＤチップ16から発
光された紫外光を所定波長の可視光に変換する波長変換
用の蛍光体層32が被着形成されている。さらに、上記Ｌ
ＥＤチップ16、コーティング材22、蛍光体層32、絶縁基
板42表面に配置された第１のリードフレーム44及び第２
のリードフレーム46は、透光性エポキシ樹脂等より成
り、先端に凸レンズ部50を有する外装体52によって被覆
・封止されている。Similar to the second LED 30, the upper surface and the side surface of the LED chip 16 are covered and sealed by the coating material 22 filled in the reflector 48, and
On the surface of the coating material 22, a phosphor layer 32 for wavelength conversion for converting the ultraviolet light emitted from the LED chip 16 into visible light of a predetermined wavelength is adhered and formed. Furthermore, the above L
The ED chip 16, the coating material 22, the phosphor layer 32, the first lead frame 44 and the second lead frame 44 arranged on the surface of the insulating substrate 42.
The lead frame 46 is made of a translucent epoxy resin or the like, and is covered and sealed by an exterior body 52 having a convex lens portion 50 at the tip.
【００２２】上記第３のＬＥＤ40にあっては、第１のリ
ードフレーム44及び第２のリードフレーム46を介してＬ
ＥＤチップ16に電圧が印加されると、ＬＥＤチップ16が
発光して紫外光が放射され、該紫外光が上記コーティン
グ材22の表面上に被着された蛍光体層32に照射されるこ
とにより、紫外光が所定色の可視光に波長変換され、該
可視光が外装体52の凸レンズ部50によって集光されて外
部へ放射されるのである。また、この第３のＬＥＤ40
は、絶縁基板42の裏面が平坦面であるため、絶縁基板42
裏面に配設された第１のリードフレーム44及び第２のリ
ードフレーム46をハンダ付けすることによって、図示し
ない回路基板への表面実装が可能である。In the above-mentioned third LED 40, the L-type LED is provided via the first lead frame 44 and the second lead frame 46.
When a voltage is applied to the ED chip 16, the LED chip 16 emits light to emit ultraviolet light, and the ultraviolet light is applied to the phosphor layer 32 deposited on the surface of the coating material 22. The wavelength of the ultraviolet light is converted into visible light of a predetermined color, and the visible light is condensed by the convex lens portion 50 of the exterior body 52 and emitted to the outside. In addition, this third LED40
Since the back surface of the insulating substrate 42 is a flat surface,
By soldering the first lead frame 44 and the second lead frame 46 provided on the back surface, surface mounting on a circuit board (not shown) is possible.
【００２３】上記実施形態においては、ＬＥＤチップ16
の表面をコーティング材22で被覆・封止した上で、さら
に透光性エポキシ樹脂等の有機材料で構成された外装体
28，52でＬＥＤチップ16を封止している場合を例に挙げ
て説明したが、本発明はこれに限定されず、例えば、上
記外装体28，52をコーティング材22と同じ無機材料で構
成しても良い。また、上記実施形態においては、リフレ
クタ14内に充填したコーティング材22の上端部が、リフ
レクタ14の上端より下方に配置されている場合を例に挙
げて説明したが、本発明はこれに限定されず、コーティ
ング材22の上端部をリフレクタ14外へ突出させ、コーテ
ィング材22の上端部を、リフレクタ14の上端より上方に
配置させても良い。In the above embodiment, the LED chip 16
The exterior body is made of organic material such as translucent epoxy resin after covering and sealing the surface of the product with coating material 22.
The case where the LED chip 16 is sealed with 28 and 52 has been described as an example, but the present invention is not limited to this. For example, the exterior bodies 28 and 52 are made of the same inorganic material as the coating material 22. You may. In the above embodiment, the case where the upper end of the coating material 22 filled in the reflector 14 is arranged below the upper end of the reflector 14 has been described as an example, but the present invention is not limited to this. Alternatively, the upper end of the coating material 22 may be projected outside the reflector 14 and the upper end of the coating material 22 may be disposed above the upper end of the reflector 14.
【００２４】[0024]
【発明の効果】本発明に係る発光ダイオードにあって
は、ＬＥＤチップを被覆するコーティング材を無機材料
で構成したので、該コーティング材が、ＬＥＤチップか
ら発光される紫外光等の短波長光を殆ど吸収することが
なく、また、短波長光を吸収したとしても、無機材料は
分子結合力が強いため劣化することが殆どない。従っ
て、エネルギーの大きい短波長光によるコーティング材
の劣化・変色が防止され、コーティング材の劣化に起因
したＬＥＤの光度減少や色調変化を生じることがない。In the light emitting diode according to the present invention, the coating material for covering the LED chip is made of an inorganic material. Therefore, the coating material can prevent short wavelength light such as ultraviolet light emitted from the LED chip. Almost no absorption occurs, and even if short-wavelength light is absorbed, the inorganic material has almost no deterioration due to its strong molecular bonding force. Therefore, deterioration and discoloration of the coating material due to short-wavelength light having high energy are prevented, and the decrease of the luminous intensity and the color tone change of the LED due to the deterioration of the coating material do not occur.
【図１】本発明に係る第１のＬＥＤの断面図である。FIG. 1 is a cross-sectional view of a first LED according to the present invention.
【図２】本発明に係る第２のＬＥＤの断面図である。FIG. 2 is a sectional view of a second LED according to the present invention.
【図３】本発明に係る第３のＬＥＤの断面図である。FIG. 3 is a cross-sectional view of a third LED according to the present invention.
【図４】従来のＬＥＤランプの断面図である。FIG. 4 is a sectional view of a conventional LED lamp.
10 第１のＬＥＤ 12，44 第１のリードフレーム 14，48 リフレクタ 16 ＬＥＤチップ 18，46 第２のリードフレーム 22 コーティング材 24 蛍光体 28，52 外装体 30 第２のＬＥＤ 32 蛍光体層 40 第３のＬＥＤ 10 First LED 12,44 First lead frame 14,48 reflector 16 LED chip 18,46 Second lead frame 22 Coating material 24 phosphor 28,52 exterior body 30 Second LED 32 phosphor layer 40 Third LED
───────────────────────────────────────────────────── フロントページの続き (72)発明者 加藤 陽弘 東京都世田谷区三軒茶屋２−46−３ 岡谷 電機産業株式会社東京事業所内 Ｆターム(参考） 4M109 AA01 BA01 CA02 DA02 EC11 GA01 5F041 AA11 AA44 CA40 DA18 DA26 DA47 DA58 DA74 DA77 DB01 DC22 EE25 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Yoshihiro Kato 2-46-3 Sangenjaya, Setagaya-ku, Tokyo Okaya Denki Sangyo Co., Ltd. Tokyo office F-term (reference) 4M109 AA01 BA01 CA02 DA02 EC11 GA01 5F041 AA11 AA44 CA40 DA18 DA26 DA47 DA58 DA74 DA77 DB01 DC22 EE25
Claims (3)
と共に、該ＬＥＤチップを透光性を備えたコーティング
材で被覆して成る発光ダイオードにおいて、上記コーテ
ィング材を無機材料で構成したことを特徴とする発光ダ
イオード。1. A light-emitting diode comprising an LED chip disposed on one surface of a substrate and the LED chip being coated with a translucent coating material, wherein the coating material is made of an inorganic material. And a light emitting diode.
リードフレームに設けた凹部内面を反射面と成して形成
したリフレクタの底面上に、上記ＬＥＤチップを配置す
ると共に、該ＬＥＤチップを、上記リフレクタ内に充填
した無機材料より成るコーティング材で被覆したことを
特徴とする請求項１に記載の発光ダイオード。2. The base body is a lead frame, and the LED chip is arranged on the bottom surface of a reflector formed by forming an inner surface of a recess formed in the lead frame as a reflection surface, and the LED chip is provided. The light emitting diode according to claim 1, wherein the reflector is covered with a coating material made of an inorganic material filled in the reflector.
徴とする請求項１又は２に記載の発光ダイオード。3. The light emitting diode according to claim 1, wherein the inorganic material is glass.
Priority Applications (1)
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|---|---|---|---|
| JP2001396258A JP2003197976A (en) | 2001-12-27 | 2001-12-27 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001396258A JP2003197976A (en) | 2001-12-27 | 2001-12-27 | Light emitting diode |
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|---|---|
| JP2003197976A true JP2003197976A (en) | 2003-07-11 |
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ID=27602398
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| WO2005124878A1 (en) * | 2004-06-22 | 2005-12-29 | Konica Minolta Holdings, Inc. | White light-emitting diode and method for producing same |
| US7859006B2 (en) | 2005-02-23 | 2010-12-28 | Mitsubishi Chemical Corporation | Semiconductor light emitting device member, method for manufacturing such semiconductor light emitting device member and semiconductor light emitting device using such semiconductor light emitting device member |
| US8759840B2 (en) | 2005-02-23 | 2014-06-24 | Mitsubishi Chemical Corporation | Semiconductor light emitting device member, method for manufacturing such semiconductor light emitting device member and semiconductor light emitting device using such semiconductor light emitting device member |
| US7928457B2 (en) | 2005-09-22 | 2011-04-19 | Mitsubishi Chemical Corporation | Member for semiconductor light emitting device and method for manufacturing such member, and semiconductor light emitting device using such member |
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