JP2003179093A - Semiconductor module and method of manufacturing the same - Google Patents

Semiconductor module and method of manufacturing the same

Info

Publication number
JP2003179093A
JP2003179093A JP2001378700A JP2001378700A JP2003179093A JP 2003179093 A JP2003179093 A JP 2003179093A JP 2001378700 A JP2001378700 A JP 2001378700A JP 2001378700 A JP2001378700 A JP 2001378700A JP 2003179093 A JP2003179093 A JP 2003179093A
Authority
JP
Japan
Prior art keywords
sealing material
semiconductor element
leakage prevention
prevention wall
semiconductor module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001378700A
Other languages
Japanese (ja)
Inventor
Sukeyuki Furukawa
資之 古川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Motor Co Ltd
Original Assignee
Nissan Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor Co Ltd filed Critical Nissan Motor Co Ltd
Priority to JP2001378700A priority Critical patent/JP2003179093A/en
Publication of JP2003179093A publication Critical patent/JP2003179093A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor module which is capable of reducing a space necessary for manufacturing processes and of manufacturing a semiconductor module of a smaller size. <P>SOLUTION: A resin for insulation is molded to be integrated with electrodes or a circuit board to form a base material 11. A semiconductor device 14 is mounted on the base material 11, and then the semiconductor device 14 and the electrodes 12 on the base material 11 are wire-bonded by gold wires 15 using a wire bonding tool. After finishing the wire bonding, sealing material leakage preventing walls 16 are so formed on the base material 11 as to surround a sealing area to prevent the leakage of a gel-like sealing material when sealing the semiconductor device 14 and the bonding wires 15. Thereafter, a space surrounded by the sealing material leakage preventing walls 16 that includes the semiconductor device 14 and the bonding wires 15 is filled with a gel-like resin, and then the gel-like resin is cured to seal the semiconductor device 14 and the bonding wires 15. <P>COPYRIGHT: (C)2003,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】本発明は、例えば車載用のパ
ワー半導体装置に適用して好適な、より小型な半導体モ
ジュールを製造可能な半導体モジュールの製造方法、お
よび、より小型な半導体モジュールに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor module manufacturing method capable of manufacturing a smaller semiconductor module, which is suitable for application to, for example, a vehicle-mounted power semiconductor device, and a smaller semiconductor module.

【０００２】[0002]

【従来の技術】従来、電気自動車等に用いられる電力変
換回路には、半導体素子を利用して電力変換を行ういわ
ゆるパワー半導体装置が用いられている。このような半
導体装置としては、半導体素子の電極面を電極板上に面
接合し、半導体素子が設けられた複数の電極板を絶縁用
樹脂によりモールドして一体化した半導体モジュールが
広く用いられている。この樹脂モールドは、半導体モジ
ュールのケースも兼ねており、樹脂モールドケースには
半導体素子等を囲むように側壁が形成され、この側壁で
囲まれた素子収容空間に半導体素子やボンディングワイ
ヤを保護するための絶縁封止材が封入され封止が行われ
る。また、この樹脂モールドケースには、半導体モジュ
ールを冷却装置に固定するためのネジ穴が設けられてい
る。そして、絶縁封止する際に、絶縁封止材がこのネジ
穴に浸入したりネジ穴から漏れたりするのを防ぐため
に、ネジ穴と絶縁封止材を封入する領域とを隔てるよう
に、樹脂モールドケースと一体成形された樹脂製の円筒
状の壁がネジ穴の周囲に設けられている。2. Description of the Related Art Conventionally, a so-called power semiconductor device that uses a semiconductor element to perform power conversion has been used in a power conversion circuit used in an electric vehicle or the like. As such a semiconductor device, a semiconductor module in which the electrode surface of a semiconductor element is surface-bonded to an electrode plate and a plurality of electrode plates provided with the semiconductor element are molded and integrated with an insulating resin is widely used. There is. This resin mold also serves as the case of the semiconductor module, and a side wall is formed in the resin mold case so as to surround the semiconductor element and the like, and in order to protect the semiconductor element and the bonding wire in the element housing space surrounded by the side wall. The insulating sealing material is encapsulated and sealed. Further, this resin mold case is provided with a screw hole for fixing the semiconductor module to the cooling device. Then, at the time of insulating and sealing, in order to prevent the insulating sealing material from penetrating into the screw hole or leaking from the screw hole, a resin is provided so as to separate the screw hole from the area where the insulating sealing material is sealed. A resin cylindrical wall integrally formed with the mold case is provided around the screw hole.

【０００３】[0003]

【発明が解決しようとする課題】しかしながら、このよ
うな構成の半導体モジュールにおいては、ネジ穴に近接
した位置に半導体素子をワイヤボンディングにより実装
しようとした場合、ボンディングワイヤ接続部とネジ穴
周囲の壁が近接しているため、ワイヤボンディングツー
ルと円筒状の壁が干渉してしまい、適切にワイヤボンデ
ィングができないという不利益がある。逆に、このよう
な事態を回避しワイヤボンディングが適切に行えるよう
にしようとすると、ネジ穴周囲の壁がボンディングツー
ルと干渉しないようにボンディングワイヤ接続部と円筒
状の壁との間にワイヤボンディングツールを挿入可能な
スペースを設ける必要がある。その結果、このツール挿
入スペースがデッドスペースとなって、半導体モジュー
ルの寸法を小さくできないという不利益があった。However, in the semiconductor module having such a structure, when the semiconductor element is mounted by wire bonding at a position close to the screw hole, the bonding wire connecting portion and the wall around the screw hole are provided. However, since the wire bonding tool and the cylindrical wall interfere with each other, the wire bonding tool cannot be properly wire bonded. On the contrary, in an attempt to avoid such a situation and ensure proper wire bonding, the wire bonding should be performed between the bonding wire connection part and the cylindrical wall so that the wall around the screw hole does not interfere with the bonding tool. It is necessary to provide a space into which the tool can be inserted. As a result, this tool insertion space becomes a dead space, and there is a disadvantage that the size of the semiconductor module cannot be reduced.

【０００４】本発明はこのような問題点に鑑みてなされ
たものであって、本発明の目的は、製造工程上必要なス
ペースをより小さくし、より小型の半導体モジュールを
製造することのできる半導体モジュールの製造方法を提
供することにある。また、本発明の他の目的は、製造工
程上の作業スペースをより少なくした小型の半導体モジ
ュールを提供することにある。The present invention has been made in view of the above problems, and an object of the present invention is to reduce the space required in the manufacturing process and to manufacture a smaller semiconductor module. It is to provide a method of manufacturing a module. Another object of the present invention is to provide a small-sized semiconductor module with a smaller working space in the manufacturing process.

【０００５】[0005]

【課題を解決するための手段】前記目的を達成するため
に、本発明の第１の観点によれば、本発明の半導体モジ
ュールの製造方法は、基体上に半導体素子を搭載し、前
記搭載された半導体素子または前記半導体素子を搭載し
た基体に対して所定の処理を施し、前記基体上の半導体
素子の周囲に選択的に封止材の漏れを防止する封止材漏
れ防止壁を形成し、前記搭載された半導体素子の周囲に
封止材を注入し、前記注入した封止部材を硬化させ前記
半導体素子を封止する（請求項１）。To achieve the above object, according to a first aspect of the present invention, there is provided a method of manufacturing a semiconductor module according to the present invention, in which a semiconductor element is mounted on a substrate and the semiconductor device is mounted. A predetermined treatment is performed on the semiconductor element or the base on which the semiconductor element is mounted, and a sealing material leakage prevention wall that selectively prevents the sealing material from leaking is formed around the semiconductor element on the base, A sealing material is injected around the mounted semiconductor element, and the injected sealing member is cured to seal the semiconductor element (claim 1).

【０００６】本発明はこれに限定されるものではない
が、例えば前記所定の処理は前記搭載された半導体素子
と前記基体上の電極とのワイヤボンディングであり、前
記封止材漏れ防止壁は、前記ワイヤボンディングを行っ
た箇所の近傍に形成する（請求項２）。また、これに限
定されるものではないが、前記基体は、例えば当該基体
を固定するための部材を通過させる開口部を有し、前記
封止材漏れ防止壁は、前記開口部より封止材が漏れない
ように当該開口部と前記搭載された半導体素子との間に
設けられる（請求項３）。Although the present invention is not limited to this, for example, the predetermined processing is wire bonding between the mounted semiconductor element and the electrode on the base, and the sealing material leakage prevention wall is It is formed in the vicinity of the portion where the wire bonding is performed (claim 2). Further, although not limited to this, the base has, for example, an opening through which a member for fixing the base is passed, and the sealing material leakage prevention wall is provided with a sealing material from the opening. Is provided between the opening and the mounted semiconductor element so as not to leak (claim 3).

【０００７】このような半導体モジュールの製造方法に
おいては、まず、例えば電極板や回路パタン、場合によ
っては回路基板を含み、例えば絶縁用樹脂をモールドす
ることにより形成された基体に、まず、半導体素子を搭
載する。次に、例えばワイヤボンディングを行って基体
上の電極と半導体素子とを接続する（請求項２）等、搭
載されている半導体素子あるいは半導体素子を搭載した
基体に対して、半導体モジュールの製造に関わる種々の
処理を施す。それらの処理の中で、少なくとも基体表面
に装置が近接して行われる処理が終了したら、換言すれ
ば、基体表面に障害物が存在している場合には処理が施
せないような処理が終了したら、基体上に、封止材の漏
れを防止し封止材の形成位置を規定する封止材漏れ防止
壁を形成する。基体を形成する際に、半導体モジュール
のケースとして側壁までもが一体的に形成されている場
合にはその方向に封止材漏れ防止壁を形成する必要はな
いが、側壁が形成されておらず開放されている場合や、
あるいは、例えば基体に基体を冷却装置に固定するネジ
を通過させるためのネジ穴のような開口部が形成されて
いる場合等には、その方向あるいはそのネジ穴より封止
材が漏れないように、その側面方向あるいはその開口部
の周囲に封止材漏れ防止壁を形成する。そして、封止材
漏れ防止壁が形成したら、その封止材漏れ防止壁および
基体と一体的に樹脂モールドされた側面等の他の部材で
囲まれる半導体装置およびボンディングワイヤが存在す
る領域に、封止材を注入する。そして、この封止材を硬
化することにより、所望の領域が適切に樹脂封止された
半導体モジュールが形成される。In such a semiconductor module manufacturing method, first, for example, an electrode plate, a circuit pattern, and in some cases, a circuit board, and a base formed by molding an insulating resin, for example, a semiconductor element is first formed. Equipped with. Next, for example, wire bonding is performed to connect the electrode on the base to the semiconductor element (claim 2), and the like, which relates to the manufacturing of the semiconductor module for the mounted semiconductor element or the base on which the semiconductor element is mounted. Perform various treatments. Among these treatments, at least when the treatment performed by the apparatus being close to the substrate surface is completed, in other words, when the treatment that cannot be performed when the obstacle is present on the substrate surface is terminated. A sealing material leakage prevention wall is formed on the substrate to prevent the sealing material from leaking and to define the position where the sealing material is formed. When the base body is formed, even if the side wall is integrally formed as the case of the semiconductor module, it is not necessary to form the sealing material leakage prevention wall in that direction, but the side wall is not formed. If it is open,
Alternatively, for example, when an opening portion such as a screw hole for passing a screw for fixing the substrate to the cooling device is formed in the base body, the sealing material should be prevented from leaking in that direction or the screw hole. A sealing material leakage prevention wall is formed in the side surface direction or around the opening. After the sealing material leakage prevention wall is formed, the sealing material leakage prevention wall and the substrate are integrally sealed with a region surrounded by another member such as a side face resin-molded with the semiconductor device and the bonding wire. Inject stop material. Then, by curing this sealing material, a semiconductor module in which a desired region is appropriately resin-sealed is formed.

【０００８】これに限定されるものではないが、例えば
前記封止材漏れ防止壁は、当該壁部材を前記基体に接着
することにより（請求項４）、あるいは、基体に設けら
れた溝に嵌合させることにより（請求項５）、前記基体
上に形成する。また、例えば形成されているネジ穴に十
分大きな頭部を有するネジを挿入し、ネジの頭部により
封止材漏れ防止壁を押圧することにより（請求項７）、
封止材漏れ防止壁に基体方向に力を印加して封止材漏れ
防止壁と基体とを圧着し、その状態で封止材を注入する
（請求項６）。Although not limited to this, for example, the sealing material leakage prevention wall is fitted by adhering the wall member to the base body (claim 4) or in a groove provided in the base body. By combining (claim 5), it forms on the said base | substrate. In addition, for example, by inserting a screw having a sufficiently large head into the formed screw hole and pressing the sealing material leakage prevention wall by the head of the screw (claim 7),
A force is applied to the sealing material leakage prevention wall in the direction of the base body to press-bond the sealing material leakage prevention wall and the base body, and the sealing material is injected in that state (claim 6).

【０００９】また、これに限定されるものではないが、
例えば前述した開口部からの封止材の漏れを防ぐためで
あれば、次のような方法も好適である。まず、断面が前
記開口部を塞ぐ形状の筒状頭部と前記開口部に挿入可能
な足部を有するピン型部材の頭部に、フィルム状の封止
材漏れ防止部材を巻き付ける。次に、このピンの足部を
開口部に挿入して頭部を基体に密着させることにより、
フィルムが前記開口部を囲むようにして前記封止材漏れ
防止壁を形成する。この状態で半導体素子の周囲に封止
材を注入し、注入した封止部材を硬化させ、封止材が硬
化したらフィルム状の封止材漏れ防止部材を残してピン
型部材を除去する。その結果、開口部をフィルム（封止
材漏れ防止壁）で囲んだ状態で樹脂封止が完了する。樹
脂封止が完了したら、その開口部を利用してネジにより
その半導体モジュールを冷却装置等に固定する（請求項
８）。Although not limited to this,
For example, in order to prevent the sealing material from leaking through the opening described above, the following method is also suitable. First, a film-shaped sealing material leakage prevention member is wound around the head of a pin-shaped member having a cylindrical head whose cross section closes the opening and a foot that can be inserted into the opening. Next, by inserting the foot portion of this pin into the opening and bringing the head into close contact with the base body,
The sealing material leakage prevention wall is formed so that a film surrounds the opening. In this state, the sealing material is injected around the semiconductor element, the injected sealing member is cured, and when the sealing material is cured, the pin-shaped member is removed leaving the film-shaped sealing material leakage prevention member. As a result, the resin sealing is completed with the opening surrounded by the film (sealing material leakage prevention wall). When the resin sealing is completed, the semiconductor module is fixed to the cooling device or the like with a screw using the opening (claim 8).

【００１０】また、前記目的を達成するために、本発明
の第２の観点によれば、本発明の半導体モジュールは、
基体上に半導体素子が実装された半導体モジュールであ
って、所望の導電パタンが形成され、当該半導体モジュ
ールを所定の取り付け部材により他の部材に取り付ける
ための開口部を有する基体と、前記基体上に実装され、
ワイヤボンディングにより当該基体上の前記導電パタン
と電気的に接続されている半導体素子と、前記半導体素
子および前記ワイヤボンディングされたワイヤを封止す
る封止材が前記開口部に漏れないように、前記半導体素
子に近接した前記開口部の周囲に形成された封止材漏れ
防止壁と、前記封止材漏れ防止壁により範囲が制限され
て形成された前記半導体素子および前記ワイヤボンディ
ングされたワイヤを封止する封止部材とを有する（請求
項９）。In order to achieve the above object, according to a second aspect of the present invention, a semiconductor module of the present invention comprises:
A semiconductor module in which a semiconductor element is mounted on a base, a desired conductive pattern is formed, and the base has an opening for attaching the semiconductor module to another member by a predetermined attachment member; Implemented,
A semiconductor element electrically connected to the conductive pattern on the substrate by wire bonding, and a sealing material for sealing the semiconductor element and the wire-bonded wire are prevented from leaking into the opening. A sealing material leakage prevention wall formed around the opening close to the semiconductor element, and the semiconductor element and the wire-bonded wire formed in a range limited by the sealing material leakage prevention wall are sealed. And a sealing member for stopping (claim 9).

【００１１】本発明はこれに限定されるものではない
が、好適な一例としては、本発明の半導体モジュール
は、前記開口部を貫通するネジにより冷却部材と一体化
されている（請求項１０）。Although the present invention is not limited to this, as a preferred example, the semiconductor module of the present invention is integrated with a cooling member by a screw penetrating the opening (claim 10). .

【００１２】[0012]

【発明の効果】請求項１〜８に記載の発明によれば、基
体に搭載された半導体あるいは半導体の搭載された基体
に対して、半導体モジュールの製造に関わる所定の処理
を施した後に、そのような処理を行う際に障害となる可
能性のある封止材漏れ防止壁を形成し、これにより封止
を行っている。したがって、製造工程上必要なスペース
をより小さくし、より小型の半導体モジュールを製造す
ることができる。According to the present invention, the semiconductor mounted on the base body or the base body on which the semiconductor is mounted is subjected to predetermined processing for manufacturing a semiconductor module, and then the semiconductor module is manufactured. A sealing material leakage prevention wall that may be a hindrance when performing such processing is formed, and thereby sealing is performed. Therefore, the space required in the manufacturing process can be further reduced, and a smaller semiconductor module can be manufactured.

【００１３】そして特に請求項２に記載の発明によれ
ば、ワイヤボンディングは封止材漏れ防止壁が存在しな
い状態で広い作業空間を利用して行うことができ、ま
た、ワイヤボンディングされた半導体素子のすぐ近傍に
封止材漏れ防止壁を形成して封止を行うことができ、ワ
イヤボンディングされた半導体素子を有する半導体モジ
ュールにおいても、より小型にすることができる。ま
た、請求項３に記載の発明によれば、例えば基体に、半
導体モジュールを冷却装置等の他の部材に取りつけるた
めのネジ穴等の開口部が形成されている場合であって
も、同様に適切に封止材漏れ防止壁を形成することがで
き、これにより半導体モジュールを小型にすることがで
きる。なお、請求項４に記載の発明によれば、接着剤を
用いた通常の方法により、容易に封止材漏れ防止壁を形
成することができる。また、請求項５に記載の発明によ
れば、接着剤を用いることなく封止材漏れ防止壁を形成
することができる。According to the second aspect of the invention, wire bonding can be carried out in a wide working space without the sealing material leakage prevention wall, and the wire-bonded semiconductor element can be used. A sealing material leakage prevention wall can be formed in the immediate vicinity thereof to perform sealing, and the size of a semiconductor module having a wire-bonded semiconductor element can be further reduced. Further, according to the invention described in claim 3, even when, for example, an opening such as a screw hole for attaching the semiconductor module to another member such as a cooling device is formed in the base, the same applies. The sealant leakage prevention wall can be appropriately formed, and thus the semiconductor module can be downsized. According to the invention described in claim 4, the sealant leakage prevention wall can be easily formed by a usual method using an adhesive. According to the invention of claim 5, the sealant leakage prevention wall can be formed without using an adhesive.

【００１４】また、請求項６に記載の発明によれば、封
止時のシール性能を向上させることができ、より高性能
な半導体モジュールを製造することができる。また、請
求項７に記載の発明によれば、基体に形成されているネ
ジ穴を利用して封止材漏れ防止壁に圧力を印加すること
ができる。したがって、新たな装置を必要とせず、容易
に封止時のシール性能を向上させることができ、ひいて
はより高性能な半導体モジュールを容易に製造すること
ができる。また、請求項８に記載の発明によれば、封止
材漏れ防止壁の厚さを薄くすることができるので、なお
一層小型の半導体モジュールを製造することができる。According to the invention described in claim 6, the sealing performance at the time of sealing can be improved, and a higher performance semiconductor module can be manufactured. Further, according to the invention described in claim 7, it is possible to apply a pressure to the sealing material leakage prevention wall by utilizing the screw hole formed in the base body. Therefore, a new device is not required, the sealing performance at the time of sealing can be easily improved, and a higher-performance semiconductor module can be easily manufactured. Further, according to the invention as set forth in claim 8, the thickness of the sealing material leakage prevention wall can be reduced, so that an even smaller semiconductor module can be manufactured.

【００１５】また、請求項９に記載の発明によれば、製
造工程上の作業スペースをより少なくした小型の半導体
モジュールを提供することができる。そして、特に請求
項１０に記載の発明によれば、小型で放熱効果の高い半
導体モジュールを提供することができる。According to the invention described in claim 9, it is possible to provide a small-sized semiconductor module in which the working space in the manufacturing process is further reduced. According to the tenth aspect of the invention, it is possible to provide a small-sized semiconductor module having a high heat dissipation effect.

【００１６】[0016]

【発明の実施の形態】第１の実施の形態 本発明の第１の実施の形態について、図１〜図４を参照
して説明する。図１および図２は、本発明の第１の実施
の形態の半導体モジュールの製造方法を説明するための
図である。また、図３は、ワイヤボンディングを行う際
のワイヤボンディングツールを示す図である。以下、図
面を参照して第１の実施の形態の半導体モジュールの製
造方法について説明する。BEST MODE FOR CARRYING OUT THE INVENTION First Embodiment A first embodiment of the present invention will be described with reference to FIGS. 1 and 2 are views for explaining a method for manufacturing a semiconductor module according to the first embodiment of the present invention. Further, FIG. 3 is a diagram showing a wire bonding tool when performing wire bonding. Hereinafter, a method of manufacturing the semiconductor module according to the first embodiment will be described with reference to the drawings.

【００１７】まず、絶縁用樹脂をモールドし電極１２あ
るいは回路基板と一体化することにより、図１（Ａ）に
示すような基体１１を形成する。この基体１１は、半導
体素子が搭載される基板であると同時に、半導体モジュ
ールのケースの一部を構成するものである。また、この
基体１１には、基体１１を冷却装置に接合するネジを通
過させ係止するための開口部１３が設けられている。次
に、図１（Ｂ）に示すように、この基体１１に半導体素
子１４を搭載し、図３に示すようなツールを使用して、
半導体素子１４と基体１１上の電極１２とをワイヤボン
ディングし、これらを金線１５により接続する。First, an insulating resin is molded and integrated with the electrode 12 or the circuit board to form a base 11 as shown in FIG. 1 (A). The base 11 is a substrate on which a semiconductor element is mounted, and at the same time forms a part of a case of a semiconductor module. In addition, the base 11 is provided with an opening 13 for passing and locking a screw that joins the base 11 to the cooling device. Next, as shown in FIG. 1B, the semiconductor element 14 is mounted on the base 11, and a tool as shown in FIG.
The semiconductor element 14 and the electrode 12 on the base 11 are wire-bonded, and these are connected by a gold wire 15.

【００１８】次に、半導体素子１４およびボンディング
ワイヤ１５を封止するために、図１（Ｃ）に示すよう
に、ゲル状の封止材の漏れを防止するための封止材漏れ
防止壁１６を基体１１上に形成する。この封止材漏れ防
止壁１６は、基体１１の側面方向において、その封止す
る領域を囲むように形成される。なお、基体１１のモー
ルド時に側壁が一体的に形成されているような箇所につ
いては、封止材漏れ防止壁１６を設ける必要はなく、そ
の側壁がそのまま封止領域を規定する壁として用いられ
る。また、基体１１上の封止対象領域中に開口部１３等
のような穴が形成されている場合には、この穴より封止
材が漏れないよう、図１（Ｃ）に示すように、この開口
部１３を囲むように封止材漏れ防止壁を形成する。ま
た、第１の実施の形態においてこの封止材漏れ防止壁１
６は、壁を構成する樹脂部材を接着剤により基体１１に
接着することにより形成される。Next, in order to seal the semiconductor element 14 and the bonding wire 15, as shown in FIG. 1C, a sealing material leakage prevention wall 16 for preventing leakage of a gel-like sealing material. Are formed on the substrate 11. The sealing material leakage prevention wall 16 is formed so as to surround the sealing region in the side surface direction of the base 11. It should be noted that it is not necessary to provide the sealing material leakage prevention wall 16 at a portion where the side wall is integrally formed when the base 11 is molded, and the side wall is used as it is as a wall for defining the sealing region. Further, when a hole such as the opening 13 is formed in the region to be sealed on the base body 11, as shown in FIG. 1C, the sealing material does not leak from the hole as shown in FIG. A sealant leakage prevention wall is formed so as to surround the opening 13. In addition, in the first embodiment, the sealing material leakage prevention wall 1
6 is formed by adhering the resin member forming the wall to the base 11 with an adhesive.

【００１９】封止材漏れ防止壁１６を形成したら、図２
（Ｄ）に示すように、基体１１の側壁および封止材漏れ
防止壁１６により囲まれ半導体素子１４およびボンディ
ングワイヤ１５を含む空間にゲル状の樹脂１７を充填す
る。そして、これを硬化させることにより封止を行い、
半導体モジュール１を形成する。そして、図１（Ｅ）に
示すように、開口部１３にネジ２１を挿入し、封止の終
了した半導体モジュール１を冷却装置に接合する。After forming the sealing material leakage prevention wall 16, as shown in FIG.
As shown in (D), the gel-like resin 17 is filled in the space surrounded by the side wall of the base 11 and the sealing material leakage prevention wall 16 and including the semiconductor element 14 and the bonding wire 15. Then, by curing this, sealing is performed,
The semiconductor module 1 is formed. Then, as shown in FIG. 1E, a screw 21 is inserted into the opening 13 and the semiconductor module 1 that has been sealed is joined to the cooling device.

【００２０】このように、第１の実施の形態の半導体モ
ジュールの製造方法においては、ワイヤボンディングを
行う時には図１（Ｂ）に示すように封止材漏れ防止壁１
６が未だ形成されておらず、図２に示すようなボンディ
ングツールが稼動する際に障害となるような背の高い構
成物がない。したがって、ボンディングツールは基体１
１に近接した空間を自在に動くことができ、適切にワイ
ヤボンディングを行うことができる。また、封止材漏れ
防止壁１６は、ワイヤボンディング等の基体１１に近接
した空間をツールが稼動して行う製造工程が終了した後
に設けることとなる。したがって、封止材漏れ防止壁１
６は所望の位置に設けることができる。すなわち、ワイ
ヤボンディング等の製造工程のための空間を考慮する必
要なく、単に例えば半導体モジュールを小型化したいと
いう要望に対応して封止空間を決定し、これに基づいて
封止材漏れ防止壁１６を形成すればよい。その結果、半
導体素子１４およびボンディングワイヤ１５周辺の必要
最小限の空間を封止することができ、半導体モジュール
１の小型化が促進される。As described above, in the method of manufacturing the semiconductor module according to the first embodiment, the sealing material leakage prevention wall 1 as shown in FIG.
6 has not yet been formed and there are no tall components that would interfere with the operation of the bonding tool as shown in FIG. Therefore, the bonding tool is the base 1
It is possible to move freely in the space close to 1, and it is possible to perform wire bonding appropriately. Further, the sealing material leakage prevention wall 16 is provided after the manufacturing process performed by operating the tool in a space close to the base 11 such as wire bonding is completed. Therefore, the sealant leakage prevention wall 1
6 can be provided at a desired position. That is, it is not necessary to consider the space for the manufacturing process such as wire bonding, and the sealing space is determined in accordance with the desire to simply downsize the semiconductor module, for example, and based on this, the sealing material leakage prevention wall 16 Should be formed. As a result, the minimum necessary space around the semiconductor element 14 and the bonding wire 15 can be sealed, and the miniaturization of the semiconductor module 1 is promoted.

【００２１】なお、本実施の形態において、封止材漏れ
防止壁は基体に接着剤により接着するものとしたが、例
えば基体に形成した溝と嵌合するようにしてもよい。具
体的には、例えば図４（Ａ）に示すように基体１１ｂに
溝１８を形成しておき、図４（Ｂ）に示すように半導体
素子１４を搭載してワイヤボンディングにより半導体素
子１４の電極と基体１１ｂ上の電極１２とを金線１５で
接続する。そして、図４（Ｃ）に示すように、基体１１
ｂに形成した溝１８に封止材漏れ防止壁１６の部材を嵌
合させることにより封止材漏れ防止壁１６を形成する。
なお、以後の工程は、前述した工程と同じである。この
ようにして、半導体モジュール１を構成するようにして
もよい。In the present embodiment, the sealing material leakage prevention wall is adhered to the base with an adhesive, but it may be fitted with a groove formed in the base, for example. Specifically, for example, the groove 18 is formed in the base 11b as shown in FIG. 4A, the semiconductor element 14 is mounted as shown in FIG. 4B, and the electrode of the semiconductor element 14 is formed by wire bonding. And the electrode 12 on the base 11b are connected by a gold wire 15. Then, as shown in FIG.
The sealing material leakage prevention wall 16 is formed by fitting the member of the sealing material leakage prevention wall 16 into the groove 18 formed in b.
The subsequent steps are the same as those described above. The semiconductor module 1 may be configured in this way.

【００２２】第２の実施の形態 本発明の第２の実施の形態について、図５および図６を
参照して説明する。図５および図６は、本発明の第２の
実施の形態の半導体モジュールの製造方法を説明するた
めの図である。第２の実施の形態においては、形成した
封止材漏れ防止壁を基体に密着させることにより、より
シール性能よく封止が行えるようにしたものである。以
下、図面を参照して第２の実施の形態の半導体モジュー
ルの製造方法について説明する。 Second Embodiment A second embodiment of the present invention will be described with reference to FIGS. 5 and 6. 5 and 6 are views for explaining the method for manufacturing a semiconductor module according to the second embodiment of the present invention. In the second embodiment, the formed sealant leakage prevention wall is brought into close contact with the substrate so that sealing can be performed with better sealing performance. Hereinafter, a method of manufacturing the semiconductor module according to the second embodiment will be described with reference to the drawings.

【００２３】まず、絶縁用樹脂をモールドし電極１２あ
るいは回路基板と一体化することにより、図５（Ａ）に
示すような基体１１ｃを形成する。なお、この基体１１
ｃには、ネジ穴１９が設けられている。次に、図５
（Ｂ）に示すように、この基体１１ｃに半導体素子１４
を搭載し、ワイヤボンディングを行うことにより、半導
体素子１４の電極と基体１１ｃ上の電極１２とを金線１
５により接続する。First, an insulating resin is molded and integrated with the electrode 12 or the circuit board to form a substrate 11c as shown in FIG. 5 (A). The base 11
A screw hole 19 is provided in c. Next, FIG.
As shown in (B), the semiconductor element 14 is formed on the base 11c.
And the wire bonding is performed to connect the electrode of the semiconductor element 14 and the electrode 12 on the base 11c to the gold wire 1.
Connect by 5.

【００２４】次に、図５（Ｃ）に示すように、ゲル状の
封止材の漏れを防止するための封止材漏れ防止壁１６を
基体１１上に形成し、ネジ２２およびワッシャ２３によ
り基体１１ｃ方向に押さえつける。ここで、ネジ２２は
ネジ穴１９に係合するネジであり、ワッシャ２３は、ネ
ジ穴１９の周囲の封止材漏れ防止壁１６を一括して押さ
える程度の外径を有しネジ２２に掛止されるワッシャで
ある。なお、封止材漏れ防止壁１６は、一次的には第１
の実施の形態と同様に、壁を構成する樹脂部材を接着剤
により基体１１に接着することにより形成される。Next, as shown in FIG. 5 (C), a sealing material leakage prevention wall 16 for preventing the leakage of the gel sealing material is formed on the base body 11, and the screw 22 and the washer 23 are used. Press down in the direction of the base 11c. Here, the screw 22 is a screw that engages with the screw hole 19, and the washer 23 has an outer diameter such that the sealing material leakage prevention wall 16 around the screw hole 19 is collectively pressed, and the washer 23 hooks the screw 22. It is a washer that is stopped. The sealing material leakage prevention wall 16 is primarily the first
Similar to the above embodiment, it is formed by adhering the resin member forming the wall to the base 11 with an adhesive.

【００２５】封止材漏れ防止壁１６を形成したら、図６
（Ｄ）に示すように、基体１１ｃの側壁および封止材漏
れ防止壁１６により囲まれ半導体素子１４およびボンデ
ィングワイヤ１５を含む空間にゲル状の樹脂１７を充填
する。そして、これを硬化させることにより封止を行
い、封止材漏れ防止壁１６に基体１１ｃ方向の力を印加
していたネジ２２およびワッシャ２３を取り除くことに
より半導体モジュール１ｃを形成する。なお、この半導
体モジュール１ｃを、例えば冷却装置等に接合する場合
には、図６（Ｅ）に示すように、足部はネジ穴１９を通
過し、頭部およびワッシャが封止材漏れ防止壁１６で囲
まれる領域に収容されるような、ネジ２２とは若干径の
小さいネジ２１を用いる。After forming the sealing material leakage prevention wall 16, as shown in FIG.
As shown in (D), the space surrounded by the side wall of the base body 11c and the sealing material leakage prevention wall 16 and containing the semiconductor element 14 and the bonding wire 15 is filled with the gel resin 17. Then, the semiconductor module 1c is formed by hardening it to perform sealing, and removing the screw 22 and the washer 23 that have applied the force in the direction of the base 11c to the sealing material leakage prevention wall 16. When the semiconductor module 1c is joined to, for example, a cooling device or the like, as shown in FIG. 6 (E), the legs pass through the screw holes 19 and the head and washer have the sealing material leakage prevention wall. A screw 21 having a slightly smaller diameter than the screw 22 is used so that it can be accommodated in a region surrounded by 16.

【００２６】このように、第２の実施の形態の半導体モ
ジュールの製造方法においても、第１の実施の形態と同
様に、ボンディングツールは基体１１に近接した空間を
自在に動くことができ、適切にワイヤボンディング等の
工程を実施することができる。また、ワイヤボンディン
グ等の製造工程のための空間を考慮する必要なく、半導
体素子１４およびボンディングワイヤ１５周辺の必要最
小限の空間で封止を行うことができ、半導体モジュール
１の小型化が促進される。そして、さらに第２の実施の
形態の半導体モジュールの製造方法においては、封止材
漏れ防止壁１６を基体１１ｃ方向に押さえつけることが
できるため、シール性能が向上する。また、円筒部の内
径および円柱部の外径の寸法公差を大きくすることも可
能となる。さらに、円筒部の下端部もしくは全体に弾性
の高い素材を用いると、ケース側の面の粗さを吸収する
ことができ、より確実なシール効果を得ることができ
る。As described above, also in the method of manufacturing the semiconductor module of the second embodiment, the bonding tool can move freely in the space close to the base 11 as in the case of the first embodiment. Then, a process such as wire bonding can be performed. Further, it is possible to perform the sealing in the minimum necessary space around the semiconductor element 14 and the bonding wire 15 without having to consider the space for the manufacturing process such as wire bonding, thereby promoting miniaturization of the semiconductor module 1. It Further, in the method of manufacturing the semiconductor module of the second embodiment, the sealing material leakage prevention wall 16 can be pressed in the direction of the base body 11c, so the sealing performance is improved. Further, it is possible to increase the dimensional tolerance of the inner diameter of the cylindrical portion and the outer diameter of the cylindrical portion. Furthermore, if a material having high elasticity is used for the lower end portion or the whole of the cylindrical portion, the roughness of the surface on the case side can be absorbed, and a more reliable sealing effect can be obtained.

【００２７】第３の実施の形態 本発明の第３の実施の形態について、図７および図８を
参照して説明する。図７および図８は、本発明の第３の
実施の形態の半導体モジュールの製造方法を説明するた
めの図である。第３の実施の形態は、フィルム状の素材
で形成された円筒状の封止材漏れ防止壁を、これに内接
する封止材漏れ防止壁保持円柱により保持し、封止材が
硬化した後にこの封止材漏れ防止壁保持円柱のみを取り
去ることで、ネジ穴近傍への封止材の侵入を防ぐように
したものである。以下、図面を参照して第３の実施の形
態の半導体モジュールの製造方法について説明する。 Third Embodiment A third embodiment of the present invention will be described with reference to FIGS. 7 and 8. 7 and 8 are views for explaining a method for manufacturing a semiconductor module according to the third embodiment of the present invention. In the third embodiment, a cylindrical sealing material leakage prevention wall formed of a film-shaped material is held by a sealing material leakage prevention wall holding column which is inscribed therein, and after the sealing material is cured. By removing only the sealing material leakage prevention wall holding column, the sealing material is prevented from entering the vicinity of the screw hole. Hereinafter, a method of manufacturing the semiconductor module according to the third embodiment will be described with reference to the drawings.

【００２８】まず、絶縁用樹脂をモールドし電極１２あ
るいは回路基板と一体化することにより、図７（Ａ）に
示すような基体１１ｄを形成する。なお、この基体１１
ｄには、開口部１３が設けられている。次に、図７
（Ｂ）に示すように、この基体１１ｄに半導体素子１４
を搭載し、ワイヤボンディングを行うことにより、半導
体素子１４の電極と基体１１ｄ上の電極１２とを金線１
５により接続する。First, an insulating resin is molded and integrated with the electrode 12 or the circuit board to form a substrate 11d as shown in FIG. 7 (A). The base 11
The opening 13 is provided in d. Next, FIG.
As shown in (B), the semiconductor element 14 is formed on the base 11d.
And the wire bonding is performed to connect the electrode of the semiconductor element 14 and the electrode 12 on the base 11d to the gold wire 1.
Connect by 5.

【００２９】次に、図７（Ｃ）に示すように、フィルム
状の素材でできた封止材漏れ防止壁２０を表面に密着さ
せたピン形状の封止材漏れ防止壁保持円柱２４の開口部
１３に嵌合して、基体１１ｄに取りつける。この封止材
漏れ防止壁保持円柱２４は、頭部が、第１の実施の形態
および第２の実施の形態で示した開口部１３またはネジ
穴１９に封止材が浸入するのを防ぐ封止材漏れ防止壁１
６により囲まれた柱形状の空間と同一の形状をし、この
頭部に、開口部１３に挿入する足部を設けたピン形状の
部材である。このような封止材漏れ防止壁保持円柱２４
を取りつけたら、図８（Ｄ）に示すように、基体１１ｃ
の半導体素子１４およびボンディングワイヤ１５を含む
空間にゲル状の樹脂１７を充填し、これを硬化させるこ
とにより封止を行う。封止樹脂の硬化が終了したら、フ
ィルム状封止材漏れ防止壁２０を残して封止材漏れ防止
壁保持円柱２４を抜くことにより、半導体モジュール１
ｄが形成される。そして、図８（Ｅ）に示すように、開
口部１３にネジ２１を挿入し、封止の終了した半導体モ
ジュール１を冷却装置に接合する。Next, as shown in FIG. 7C, the opening of the pin-shaped sealing material leakage prevention wall holding column 24 in which the sealing material leakage prevention wall 20 made of a film-shaped material is brought into close contact with the surface. The part 13 is fitted and attached to the base 11d. The sealing material leakage prevention wall holding cylinder 24 is a sealing member that prevents the sealing material from invading the opening 13 or the screw hole 19 shown in the first and second embodiments. Wall leakage prevention wall 1
It is a pin-shaped member having the same shape as a pillar-shaped space surrounded by 6, and provided with a foot portion to be inserted into the opening portion 13 in this head portion. Such a sealing material leakage prevention wall holding column 24
After mounting, as shown in FIG.
The space including the semiconductor element 14 and the bonding wire 15 is filled with a gel-like resin 17, and the resin is cured to perform sealing. After the curing of the sealing resin is completed, the film-shaped sealing material leakage prevention wall 20 is left and the sealing material leakage prevention wall holding column 24 is pulled out.
d is formed. Then, as shown in FIG. 8E, a screw 21 is inserted into the opening 13 and the semiconductor module 1 that has been sealed is joined to the cooling device.

【００３０】このように、第３の実施の形態の半導体モ
ジュールの製造方法においても、第１の実施の形態およ
び第２の実施の形態と同様に、ボンディングツールは基
体１１に近接した空間を自在に動くことができ、適切に
ワイヤボンディング等の工程を実施することができる。
また、ワイヤボンディング等の製造工程のための空間を
考慮する必要なく、半導体素子１４およびボンディング
ワイヤ１５周辺の必要最小限の空間で封止を行うことが
でき、半導体モジュール１の小型化が促進される。そし
て、さらに第３の実施の形態の半導体モジュールの製造
方法においては、封止材漏れ防止壁保持円柱２４を用い
ることにより、封止樹脂充填時および封止時に封止材漏
れ防止壁が単独で封止材の圧力に耐える必要がなくなる
ために、封止材漏れ防止壁を薄くすることができる。そ
の結果、薄いフィルム形状の封止材漏れ防止壁２０を用
いることができ、半導体モジュール１をより小型化する
ことができる。As described above, also in the method of manufacturing the semiconductor module of the third embodiment, the bonding tool can freely move in the space close to the base 11 as in the first and second embodiments. Therefore, the steps such as wire bonding can be appropriately performed.
Further, it is possible to perform the sealing in the minimum necessary space around the semiconductor element 14 and the bonding wire 15 without having to consider the space for the manufacturing process such as wire bonding, thereby promoting miniaturization of the semiconductor module 1. It Further, in the method for manufacturing a semiconductor module of the third embodiment, the sealing material leakage prevention wall holding column 24 is used, so that the sealing material leakage prevention wall is independently provided at the time of sealing resin filling and sealing. Since it is not necessary to withstand the pressure of the sealing material, the sealing material leakage prevention wall can be made thin. As a result, the thin film-shaped sealing material leakage prevention wall 20 can be used, and the semiconductor module 1 can be further downsized.

【００３１】なお、本実施の形態においては、封止材漏
れ防止壁保持円柱２４は円柱形状としたが、柱形状であ
れば、角柱形状であってもよく、円柱に限られるもので
はない。In the present embodiment, the sealing material leakage prevention wall holding column 24 has a columnar shape, but it may have a prismatic shape as long as it has a columnar shape, and is not limited to the columnar shape.

【００３２】なお、これらの第１〜第４の各実施の形態
は、本発明の理解を容易にするために記載されたもので
あって本発明を何ら限定するものではない。本実施の形
態に開示された各要素は、本発明の技術的範囲に属する
全ての設計変更や均等物をも含み、また、任意好適な種
々の改変が可能である。The first to fourth embodiments are described to facilitate understanding of the present invention and do not limit the present invention. Each element disclosed in the present embodiment includes all design changes and equivalents belonging to the technical scope of the present invention, and various suitable various modifications are possible.

【図面の簡単な説明】[Brief description of drawings]

【図１】図１は、本発明の第１の実施の形態の半導体モ
ジュールの製造方法を説明するための図である。FIG. 1 is a diagram for explaining a method for manufacturing a semiconductor module according to a first embodiment of the present invention.

【図２】図２は、図１に続いて本発明の第１の実施の形
態の半導体モジュールの製造方法を説明するための図で
ある。FIG. 2 is a diagram for explaining the method for manufacturing the semiconductor module according to the first embodiment of the present invention, which is subsequent to FIG.

【図３】図３は、ワイヤボンディングツールの一例を示
す図である。FIG. 3 is a diagram showing an example of a wire bonding tool.

【図４】図４は、図１に示した第１の実施の形態の変形
例の半導体モジュールの製造方法を説明するための図で
ある。FIG. 4 is a diagram for explaining the manufacturing method of the semiconductor module of the modification of the first embodiment shown in FIG. 1.

【図５】図５は、本発明の第２の実施の形態の半導体モ
ジュールの製造方法を説明するための図である。FIG. 5 is a drawing for explaining the manufacturing method for the semiconductor module according to the second embodiment of the present invention.

【図６】図６は、図５に続いて本発明の第２の実施の形
態の半導体モジュールの製造方法を説明するための図で
ある。FIG. 6 is a diagram for explaining the manufacturing method for the semiconductor module according to the second embodiment of the present invention, following FIG. 5;

【図７】図７は、本発明の第３の実施の形態の半導体モ
ジュールの製造方法を説明するための図である。FIG. 7 is a drawing for explaining the manufacturing method for the semiconductor module according to the third embodiment of the present invention.

【図８】図８は、図７に続いて本発明の第３の実施の形
態の半導体モジュールの製造方法を説明するための図で
ある。FIG. 8 is a diagram for explaining the manufacturing method of the semiconductor module according to the third embodiment of the present invention, following FIG. 7;

【符号の説明】[Explanation of symbols]

１…半導体モジュール １１…基体（半導体モジュールケース） １２…電極 １３…開口部 １４…半導体素子 １５…ボンディングワイヤ（金線） １６…封止材漏れ防止壁 １７…封止樹脂 １８…溝 １９…ネジ穴 ２０…フィルム状封止材漏れ防止壁 ２１，２２…ネジ ２３…ワッシャ ２４…封止材漏れ防止壁保持円柱 1 ... Semiconductor module 11 ... Base (semiconductor module case) 12 ... Electrode 13 ... Opening 14 ... Semiconductor element 15 ... Bonding wire (gold wire) 16 ... Sealing material leakage prevention wall 17 ... Sealing resin 18 ... Groove 19 ... Screw hole 20 ... Film-shaped sealing material leakage prevention wall 21,22 ... screws 23 ... washers 24. Sealing material leak prevention wall holding cylinder

Claims (10)

【特許請求の範囲】[Claims] 【請求項１】基体上に半導体素子を搭載し、 前記搭載された半導体素子または前記半導体素子を搭載
した基体に対して所定の処理を施し、 前記半導体素子を封止する封止材の漏れを防止する封止
材漏れ防止壁を、前記基体上の前記半導体素子の周囲に
選択的に形成し、 前記搭載された半導体素子の周囲に封止材を注入し、 前記注入した封止部材を硬化させ前記半導体素子を封止
する半導体モジュールの製造方法。1. A semiconductor element is mounted on a base, and the mounted semiconductor element or the base on which the semiconductor element is mounted is subjected to a predetermined process to prevent leakage of a sealing material for sealing the semiconductor element. A sealing material leakage prevention wall for preventing the sealing material is selectively formed around the semiconductor element on the base, a sealing material is injected around the mounted semiconductor element, and the injected sealing member is cured. A method of manufacturing a semiconductor module for encapsulating the semiconductor element. 【請求項２】前記所定の処理は、前記搭載された半導体
素子と前記基体上の電極とのワイヤボンディングであ
り、 前記封止材漏れ防止壁は、前記ワイヤボンディングを行
った箇所の近傍に形成する請求項１に記載の半導体モジ
ュールの製造方法。2. The predetermined process is wire bonding between the mounted semiconductor element and an electrode on the base, and the sealant leakage prevention wall is formed in the vicinity of the position where the wire bonding is performed. The method of manufacturing a semiconductor module according to claim 1. 【請求項３】前記基体は、当該基体を表裏に貫通する開
口部を有し、 前記封止材漏れ防止壁は、前記開口部より封止材が漏れ
ないように当該開口部と前記搭載された半導体素子との
間に設ける請求項１または２に記載の半導体モジュール
の製造方法。3. The base has an opening penetrating the front and back of the base, and the sealant leakage prevention wall is mounted on the opening and the sealant so that the sealant does not leak from the opening. The semiconductor module manufacturing method according to claim 1, wherein the method is provided between the semiconductor module and the semiconductor element. 【請求項４】前記封止材漏れ防止壁は、当該壁部材を前
記基体に接着することにより、前記基体上に形成する請
求項１〜３のいずれかに記載の半導体モジュールの製造
方法。4. The method of manufacturing a semiconductor module according to claim 1, wherein the sealing material leakage prevention wall is formed on the base by adhering the wall member to the base. 【請求項５】前記封止材漏れ防止壁は、当該壁部材を前
記基体に設けられた溝に嵌合させることにより、前記基
体上に形成する請求項１〜３のいずれかに記載の半導体
モジュールの製造方法。5. The semiconductor according to claim 1, wherein the sealing material leakage prevention wall is formed on the base by fitting the wall member into a groove provided in the base. Module manufacturing method. 【請求項６】前記形成された封止材漏れ防止壁に基板方
向の力を印加することにより、当該封止材漏れ防止壁と
前記基板とを圧着し、 前記封止材漏れ防止壁が圧着された状態で、前記搭載さ
れた半導体素子の周囲に封止材を注入する請求項１〜５
のいずれかに記載の半導体モジュールの製造方法。6. The sealing material leakage prevention wall is pressure-bonded to the sealing material leakage prevention wall by applying a force in the direction of the substrate to the formed sealing material leakage prevention wall. The sealing material is injected around the mounted semiconductor element in a sealed state.
A method of manufacturing a semiconductor module according to any one of 1. 【請求項７】前記開口部はネジ穴であって、 当該ネジ穴に嵌合されたネジにより、前記形成された封
止材漏れ防止壁に基板方向の力を印加し、当該封止材漏
れ防止壁と前記基板とを圧着し、前記封止材漏れ防止壁
が圧着された状態で、前記搭載された半導体素子の周囲
に封止材を注入する請求項３に記載の半導体モジュール
の製造方法。7. The opening is a screw hole, and a screw fitted in the screw hole applies a force in the substrate direction to the formed sealing material leakage prevention wall to thereby prevent the sealing material leakage. 4. The method of manufacturing a semiconductor module according to claim 3, wherein the prevention wall and the substrate are pressure-bonded, and the sealing material is injected around the mounted semiconductor element in a state where the sealing material leakage prevention wall is pressure-bonded. . 【請求項８】断面が前記開口部を塞ぐ形状の筒状頭部と
前記開口部に挿入可能な足部を有するピン型部材であっ
て、前記頭部にフィルム状の封止材漏れ防止部材が巻き
付けられているピン型部材を、前記足部を前記開口部に
挿入して前記頭部を前記基板に密着させることにより、
前記フィルムを前記開口部を囲む前記封止材漏れ防止壁
として形成し、 前記半導体素子の周囲に封止材を注入し、 前記注入した封止部材を硬化させ、 前記フィルム状の封止材漏れ防止部材を残して前記ピン
型部材を除去し、 前記ピン型部材が除去された開口部を通過するネジによ
り、前記半導体素子が封止された基体を他の部材に取り
つける請求項３に記載の半導体モジュールの製造方法。8. A pin-shaped member having a tubular head having a cross-section that closes the opening and a foot that can be inserted into the opening, and a film-shaped sealing material leakage prevention member on the head. By inserting the pin-shaped member around which the foot part is inserted into the opening part and bringing the head part into close contact with the substrate,
The film is formed as the sealing material leakage prevention wall surrounding the opening, the sealing material is injected around the semiconductor element, the injected sealing member is cured, and the film-shaped sealing material leaks. The pin-shaped member is removed leaving the prevention member, and the base body in which the semiconductor element is sealed is attached to another member by a screw passing through the opening where the pin-shaped member is removed. Manufacturing method of semiconductor module. 【請求項９】半導体素子が実装された半導体モジュール
であって、 所望の導電パタンが形成され、当該半導体モジュールを
所定の取り付け部材により他の部材に取り付けるための
開口部を有する基体と、 前記基体上に実装され、ワイヤボンディングにより当該
基体上の前記導電パタンと電気的に接続されている半導
体素子と、 前記半導体素子および前記ワイヤボンディングされたワ
イヤを封止する封止材が前記開口部に漏れないように、
前記半導体素子に近接した前記開口部の周囲に形成され
た封止材漏れ防止壁と、 前記封止材漏れ防止壁により範囲が制限されて形成され
た前記半導体素子および前記ワイヤボンディングされた
ワイヤを封止する封止部材とを有する半導体モジュー
ル。9. A semiconductor module on which a semiconductor element is mounted, wherein a desired conductive pattern is formed, and a base having an opening for attaching the semiconductor module to another member by a predetermined attachment member; A semiconductor element mounted on the substrate and electrically connected to the conductive pattern on the substrate by wire bonding, and a sealing material for sealing the semiconductor element and the wire bonded wire leaks to the opening. Not to
A sealant leakage prevention wall formed around the opening close to the semiconductor element, the semiconductor element and the wire-bonded wire formed in a range limited by the sealant leakage prevention wall, A semiconductor module having a sealing member for sealing. 【請求項１０】前記開口部を貫通するネジにより冷却部
材と一体化されている請求項９に記載の半導体モジュー
ル。10. The semiconductor module according to claim 9, wherein the semiconductor module is integrated with a cooling member by a screw penetrating the opening.
JP2001378700A 2001-12-12 2001-12-12 Semiconductor module and method of manufacturing the same Pending JP2003179093A (en)

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JP2018107226A (en) * 2016-12-26 2018-07-05 新電元工業株式会社 Electronic device and manufacturing method of electronic device
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014192447A (en) * 2013-03-28 2014-10-06 Denso Corp Electronic control unit and manufacturing method of the same
WO2016047116A1 (en) * 2014-09-22 2016-03-31 株式会社デンソー Electronic device, and electronic structure provided with electronic device
JP2016063202A (en) * 2014-09-22 2016-04-25 株式会社デンソー Electronic device, and electronic structure including electronic device
CN106796921A (en) * 2014-09-22 2017-05-31 株式会社电装 Electronic installation and possesses the electronic structure body of electronic installation
JP2018107226A (en) * 2016-12-26 2018-07-05 新電元工業株式会社 Electronic device and manufacturing method of electronic device
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JP7373027B2 (en) 2018-03-20 2023-11-01 エルジー イノテック カンパニー リミテッド Camera module and optical equipment including it
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