JP2003177368A5 - - Google Patents

Download PDF

Info

Publication number
JP2003177368A5
JP2003177368A5 JP2001376557A JP2001376557A JP2003177368A5 JP 2003177368 A5 JP2003177368 A5 JP 2003177368A5 JP 2001376557 A JP2001376557 A JP 2001376557A JP 2001376557 A JP2001376557 A JP 2001376557A JP 2003177368 A5 JP2003177368 A5 JP 2003177368A5
Authority
JP
Japan
Prior art keywords
optical
optical waveguide
semiconductor
optical modulator
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001376557A
Other languages
Japanese (ja)
Other versions
JP2003177368A (en
JP3839710B2 (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2001376557A priority Critical patent/JP3839710B2/en
Priority claimed from JP2001376557A external-priority patent/JP3839710B2/en
Publication of JP2003177368A publication Critical patent/JP2003177368A/en
Publication of JP2003177368A5 publication Critical patent/JP2003177368A5/ja
Application granted granted Critical
Publication of JP3839710B2 publication Critical patent/JP3839710B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Claims (4)

光導波路層と、該光導波路層に電界を印加する一対の電極とを有し、印加された前記電界に基づいて前記光導波路層中を伝搬する光を変調する半導体光変調器であって、
前記光導波路層は、前記一対の電極の間において、同一である所定の導電性の第1及び第2のクラッド層間に、光導波路コア層を含む1層以上の層より形成され、
前記光導波路層の少なくとも何れか1層以上が第1の半絶縁性半導体層であることを特徴とする半導体光変調器。
A semiconductor optical modulator having an optical waveguide layer and a pair of electrodes for applying an electric field to the optical waveguide layer, and modulating light propagating in the optical waveguide layer based on the applied electric field,
The optical waveguide layer is formed of one or more layers including an optical waveguide core layer between first and second clad layers having the same predetermined conductivity between the pair of electrodes,
A semiconductor optical modulator, wherein at least one of the optical waveguide layers is a first semi-insulating semiconductor layer.
前記所定の導電性は、n型であることを特徴とする請求項1に記載の半導体光変調器。  2. The semiconductor optical modulator according to claim 1, wherein the predetermined conductivity is n-type. 入射光を第1及び第2の光路に分派する分派器と、A splitter for splitting incident light into first and second optical paths;
前記第1の光路を構成する第1の光導波路と、A first optical waveguide constituting the first optical path;
前記第2の光路を構成する第2の光導波路と、A second optical waveguide constituting the second optical path;
前記第1の光導波路と前記第2の光導波路とを合波する合波器と、A multiplexer for multiplexing the first optical waveguide and the second optical waveguide;
前記第1及び第2の光導波路の少なくとも一方上に形成された請求項1または2に記載の前記半導体光変調器と、The semiconductor optical modulator according to claim 1 or 2, formed on at least one of the first and second optical waveguides;
を有することを特徴とするマッハツェンダ型光変調器。A Mach-Zehnder optical modulator characterized by comprising:
同一の半導体基板上に、請求項1または2に記載の前記半導体光変調器と、半導体レーザと、が形成され、The semiconductor optical modulator according to claim 1 and a semiconductor laser are formed on the same semiconductor substrate,
前記半導体光変調器と前記半導体レーザとが、前記光導波路層により光学的に接続されていることを特徴とする光変調器一体型半導体レーザ。An optical modulator integrated semiconductor laser, wherein the semiconductor optical modulator and the semiconductor laser are optically connected by the optical waveguide layer.
JP2001376557A 2001-12-11 2001-12-11 Semiconductor optical modulator, Mach-Zehnder optical modulator, and optical modulator integrated semiconductor laser Expired - Lifetime JP3839710B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001376557A JP3839710B2 (en) 2001-12-11 2001-12-11 Semiconductor optical modulator, Mach-Zehnder optical modulator, and optical modulator integrated semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001376557A JP3839710B2 (en) 2001-12-11 2001-12-11 Semiconductor optical modulator, Mach-Zehnder optical modulator, and optical modulator integrated semiconductor laser

Publications (3)

Publication Number Publication Date
JP2003177368A JP2003177368A (en) 2003-06-27
JP2003177368A5 true JP2003177368A5 (en) 2005-06-16
JP3839710B2 JP3839710B2 (en) 2006-11-01

Family

ID=19184720

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001376557A Expired - Lifetime JP3839710B2 (en) 2001-12-11 2001-12-11 Semiconductor optical modulator, Mach-Zehnder optical modulator, and optical modulator integrated semiconductor laser

Country Status (1)

Country Link
JP (1) JP3839710B2 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6836351B2 (en) * 2002-10-30 2004-12-28 Northrop Grumman Corporation Quantum-confined stark effect quantum-dot optical modulator
US6933583B2 (en) * 2003-04-10 2005-08-23 Northrop Grumman Corporation In-phase RF drive of Mach-Zehnder modulator push-pull electrodes by using coupled quantum well optical active region
JP2005025086A (en) * 2003-07-01 2005-01-27 Yokogawa Electric Corp Optical switch and its manufacturing method
EP2000848B1 (en) 2003-10-03 2012-12-12 NTT Electronics Corporation Semiconductor optoelectronic waveguide
JP2007531022A (en) 2004-03-31 2007-11-01 ピレリ・アンド・チ・ソチエタ・ペル・アツィオーニ Light modulator
JP4663712B2 (en) * 2005-03-08 2011-04-06 日本電信電話株式会社 Semiconductor optical modulator
JP4494257B2 (en) * 2005-03-08 2010-06-30 日本電信電話株式会社 Light modulator
JP2007134480A (en) * 2005-11-10 2007-05-31 Nippon Telegr & Teleph Corp <Ntt> Tunable light source
JP2007133286A (en) * 2005-11-14 2007-05-31 Nippon Telegr & Teleph Corp <Ntt> Wavelength multiplexer/demultiplexer
JP5553075B2 (en) * 2006-08-10 2014-07-16 三菱電機株式会社 Semiconductor optical integrated device
JP4818968B2 (en) * 2007-03-23 2011-11-16 日本電信電話株式会社 Optical processing circuit
JP2008282937A (en) * 2007-05-10 2008-11-20 Nippon Telegr & Teleph Corp <Ntt> Tunable light source
JP5170236B2 (en) * 2008-03-28 2013-03-27 日本電気株式会社 Waveguide type semiconductor optical modulator and manufacturing method thereof
JP5104598B2 (en) * 2008-06-30 2012-12-19 富士通株式会社 Mach-Zehnder optical modulator
JP5515927B2 (en) * 2010-03-24 2014-06-11 住友電気工業株式会社 Semiconductor optical device
JP2013153015A (en) * 2012-01-24 2013-08-08 Mitsubishi Electric Corp Optical modulator integrated light source
JP6006611B2 (en) * 2012-10-24 2016-10-12 日本電信電話株式会社 Semiconductor light modulator
JP6291849B2 (en) * 2014-01-10 2018-03-14 三菱電機株式会社 Semiconductor device manufacturing method, semiconductor device
JP6417346B2 (en) * 2016-03-03 2018-11-07 日本電信電話株式会社 Semiconductor Mach-Zehnder optical modulator

Similar Documents

Publication Publication Date Title
JP2003177368A5 (en)
US6311004B1 (en) Photonic devices comprising thermo-optic polymer
JP5515927B2 (en) Semiconductor optical device
JP5560602B2 (en) Optical waveguide
TW200407571A (en) Light waveguide device, manufacturing method thereof, and optical communication apparatus
JP2531634B2 (en) Optical multiplexer / demultiplexer
DE60315599D1 (en) MULTI-MODE INTERFERENCE LIGHT WAVE LINE DEVICE
JP2007518142A (en) Photoelectric modulator using DC coupling electrode
Shen et al. High-Performance Silicon 2× 2 Thermo-Optic Switch for the 2-$\mu $ m Wavelength Band
US20020159684A1 (en) Novel optical waveguide switch using cascaded mach-zehnder interferometers
KR100472056B1 (en) Polarization-independent optical polymeric intensity modulator
JP2004046021A (en) Optical waveguide device, optical multiplexing demultiplexing device, and optical wavelength-multiplex transmitting device
JPH10160954A (en) Optical waveguide having nonlinear thin film
JP2007094336A (en) Optical semiconductor device and method of manufacturing optical semiconductor device
JP2006515435A (en) Optical element for heating
JP2932742B2 (en) Waveguide type optical device
JPH0281005A (en) Waveguide type optical device
JP2003232932A (en) Optical delay line and method of manufacturing the same
JPS635306A (en) Optical demultiplex element
Kribich et al. Thermo-optic switches using sol-gel processed hybrid materials
WO2017130744A1 (en) Organic thin-film optical integrated circuit
JP2015191111A (en) Optical add/drop apparatus, optical switch and manufacturing method
JPH05224245A (en) Hybrid optical circuit and matrix optical switch
JPH0553157A (en) Optical control device
JP3740803B2 (en) Light modulator