JP2003157516A - Perpendicular magnetic recording medium and magnetic recorder - Google Patents
Perpendicular magnetic recording medium and magnetic recorderInfo
- Publication number
- JP2003157516A JP2003157516A JP2001358205A JP2001358205A JP2003157516A JP 2003157516 A JP2003157516 A JP 2003157516A JP 2001358205 A JP2001358205 A JP 2001358205A JP 2001358205 A JP2001358205 A JP 2001358205A JP 2003157516 A JP2003157516 A JP 2003157516A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- layer
- magnetic recording
- recording medium
- perpendicular magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims abstract description 26
- 239000006249 magnetic particle Substances 0.000 claims abstract description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 22
- 230000005415 magnetization Effects 0.000 claims description 20
- 229910052697 platinum Inorganic materials 0.000 claims description 13
- 229910017052 cobalt Inorganic materials 0.000 claims description 8
- 239000010941 cobalt Substances 0.000 claims description 8
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 8
- 239000011651 chromium Substances 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- DPGAAOUOSQHIJH-UHFFFAOYSA-N ruthenium titanium Chemical compound [Ti].[Ru] DPGAAOUOSQHIJH-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 248
- 229910045601 alloy Inorganic materials 0.000 description 34
- 239000000956 alloy Substances 0.000 description 34
- 238000004544 sputter deposition Methods 0.000 description 9
- 239000000203 mixture Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 229910000599 Cr alloy Inorganic materials 0.000 description 5
- 229910000943 NiAl Inorganic materials 0.000 description 5
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 description 5
- 229910000929 Ru alloy Inorganic materials 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000010702 perfluoropolyether Substances 0.000 description 4
- 229910019222 CoCrPt Inorganic materials 0.000 description 3
- 229910000684 Cobalt-chrome Inorganic materials 0.000 description 3
- 229910001069 Ti alloy Inorganic materials 0.000 description 3
- 239000010952 cobalt-chrome Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000000314 lubricant Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- LFYJSSARVMHQJB-QIXNEVBVSA-N bakuchiol Chemical compound CC(C)=CCC[C@@](C)(C=C)\C=C\C1=CC=C(O)C=C1 LFYJSSARVMHQJB-QIXNEVBVSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910019043 CoSn Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910005335 FePt Inorganic materials 0.000 description 1
- 229910021118 PdCo Inorganic materials 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 229910002836 PtFe Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910000756 V alloy Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
- G11B5/674—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers having differing macroscopic or microscopic structures, e.g. differing crystalline lattices, varying atomic structures or differing roughnesses
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
- G11B5/672—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers having different compositions in a plurality of magnetic layers, e.g. layer compositions having differing elemental components or differing proportions of elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31786—Of polyester [e.g., alkyd, etc.]
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Magnetic Record Carriers (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】磁気ディスク装置における記
録媒体、特に垂直磁気記録方式に用いられる垂直磁気記
録媒体に関わる。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a recording medium in a magnetic disk device, particularly a perpendicular magnetic recording medium used in a perpendicular magnetic recording system.
【０００２】[0002]
【従来の技術】従来より、磁気記録装置には、磁気記録
層の磁化方法が面内を向いた、面内磁気記録方式が使用
されてきた。しかし、面内磁気記録方式で、さらに記録
密度を向上させようとした場合、媒体ＳＮＲを向上させ
るために、記録層の磁性粒子を小さくしてゆくと、熱揺
らぎのために、記録した情報が消えて行くということが
問題になってきている。媒体ＳＮＲを向上し、熱揺らぎ
を防止するために、これまでは、記録層の磁気異方性を
高める方法で対応してきた。しかしながら、記録ヘッド
による記録のしやすさの点で、これ以上、磁気異方性を
高めることができず、媒体ノイズを低減による媒体ＳＮ
Ｒの向上、熱揺らぎ耐性を向上させるということの両立
が、困難になってきている。2. Description of the Related Art Conventionally, an in-plane magnetic recording method has been used in a magnetic recording apparatus, in which the method of magnetizing a magnetic recording layer is in-plane. However, in the in-plane magnetic recording method, when it is attempted to further improve the recording density, if the magnetic particles in the recording layer are reduced in order to improve the medium SNR, the recorded information will be lost due to thermal fluctuation. Disappearing is becoming a problem. In order to improve the medium SNR and prevent thermal fluctuation, a method of increasing the magnetic anisotropy of the recording layer has been used so far. However, in terms of easiness of recording by the recording head, the magnetic anisotropy cannot be further increased, and the medium SN is reduced by reducing the medium noise.
It is becoming difficult to achieve both the improvement of R and the resistance to thermal fluctuation.
【０００３】これに対して、磁気記録層の磁化方向を垂
直にする垂直磁気記録方式では、磁化の遷移領域で、磁
化を安定化させるような磁界が互いに働くため、急峻な
遷移領域が形成され、高密度化ができる。また、このた
め、面内磁気記録媒体と比較して、同じ記録分解能を得
るために記録層の膜厚を厚くできる。このことは、記録
層の磁性粒子体積を大きく出来ることから、熱揺らぎに
対しても有利となる。記録密度が小さいビットの場合
に、記録ビット内での反磁界が大きく、この際に、熱揺
らぎが厳しくなるが、面内磁気記録媒体と異なり高密度
では安定である。On the other hand, in the perpendicular magnetic recording method in which the magnetization direction of the magnetic recording layer is made perpendicular, magnetic fields that stabilize the magnetization work in the magnetization transition region, so that a sharp transition region is formed. , High density is possible. Therefore, as compared with the in-plane magnetic recording medium, the thickness of the recording layer can be increased to obtain the same recording resolution. This is advantageous for thermal fluctuations because the volume of magnetic particles in the recording layer can be increased. In the case of a bit having a small recording density, the demagnetizing field in the recording bit is large and the thermal fluctuation becomes severe at this time, but unlike a longitudinal magnetic recording medium, it is stable at a high density.
【０００４】さらに、垂直磁気記録層の下に、軟磁性膜
を設けた垂直２層膜媒体の場合、面内磁気記録と比較し
て、ヘッド磁界を大きくすることができるため、より大
きな異方性材料を媒体として用いることができる。Further, in the case of a perpendicular double-layered film medium having a soft magnetic film provided under the perpendicular magnetic recording layer, the head magnetic field can be increased as compared with the in-plane magnetic recording, so that a larger anisotropic property can be obtained. Material can be used as a medium.
【０００５】このような点から、最近、垂直磁気記録方
式に対して、注目が集まっている。From this point of view, the perpendicular magnetic recording system has recently attracted attention.
【０００６】上記のように、垂直磁気記録では、面内磁
気記録と比較して、記録層の膜厚を厚くできるが、この
膜厚が厚すぎる場合には、ヘッドの書き込み能力が充分
でなくなるので、高記録密度を達成できないという問題
があった。しかしながら、現状以降の記録密度を考えた
場合、記録層の膜厚は、少なくとも５０ｎｍ以下、好ま
しくは３０ｎｍ以下とすることが必要であると考えられ
る。As described above, in perpendicular magnetic recording, the film thickness of the recording layer can be increased as compared with in-plane magnetic recording, but if this film thickness is too thick, the write capability of the head becomes insufficient. Therefore, there is a problem that a high recording density cannot be achieved. However, in consideration of the recording density after the present situation, it is considered that the film thickness of the recording layer needs to be at least 50 nm or less, preferably 30 nm or less.
【０００７】記録媒体の高ＳＮＲ化は、面内磁気記録媒
体と同様、重要な特性であるが、面内磁気記録媒体で
は、記録層を形成している磁性粒子を微細化することが
有効である。また、面内方向の結晶粒径を微細化すると
ともに、非磁性層を記録層の間に入れることによって、
高ＳＮＲ化に効果があることが知られている。垂直磁気
記録媒体でも、例えば特開平7-176027号公報に記載され
ているように、記録層の間に非磁性中間層を用い、各層
がエピタキシャル成長しているものが知られている。し
かし、垂直磁気記録媒体では、磁性層を各々エピタキシ
ャル成長させた場合、ノイズ成分も各層で揃ってしまう
ために、低ノイズ化が出来ないという問題があった。こ
の上下の磁性層でノイズ成分が揃ってしまう影響は、理
想的な垂直磁気記録ができる垂直２層膜媒体でより顕著
となっていた。また、非磁性中間層を磁性層間に設ける
ことにより、上下の磁性層が磁気的に分断されているの
で、磁化反転単位が膜厚方向に小さく、熱揺らぎに弱く
なってしまっていた。また、中間層を用いない積層構成
の垂直媒体として、特公平03-57535号公報には、ＣｏＣ
ｒからなる垂直磁気記録媒体において、Ｃｒの組成分布
が膜厚方向に変化している磁性層を、複数層積層するこ
とと、リング記録ヘッドとの組み合わせで、ＳＮ比の向
上した記録媒体が得られることが記載されている。しか
し、この磁気記録層の膜厚は、ｌ００ｎｍ〜１０００ｎ
ｍと厚く、もし、磁気記録層が例えば５０ｎｍのように
薄い場合には、Ｃｒの組成分布が膜厚方向に充分変化し
ない。このため、ＳＮＲの向上ができないという問題が
あった。The high SNR of the recording medium is an important characteristic as in the in-plane magnetic recording medium, but in the in-plane magnetic recording medium, it is effective to miniaturize the magnetic particles forming the recording layer. is there. Further, by making the crystal grain size in the in-plane direction finer and inserting the non-magnetic layer between the recording layers,
It is known to be effective in increasing SNR. Also in the perpendicular magnetic recording medium, as described in, for example, Japanese Patent Laid-Open No. 7-176027, a nonmagnetic intermediate layer is used between recording layers, and each layer is epitaxially grown. However, in the perpendicular magnetic recording medium, when the magnetic layers are epitaxially grown, the noise components are also uniform in each layer, so that there is a problem that noise cannot be reduced. The effect of the noise components being aligned in the upper and lower magnetic layers is more remarkable in the perpendicular double-layer film medium capable of ideal perpendicular magnetic recording. Further, since the upper and lower magnetic layers are magnetically separated by providing the non-magnetic intermediate layer between the magnetic layers, the magnetization reversal unit is small in the film thickness direction and is weak against thermal fluctuation. Further, Japanese Patent Publication No. 03-57535 discloses a vertical medium having a laminated structure not using an intermediate layer as CoC.
In a perpendicular magnetic recording medium composed of r, a recording medium having an improved SN ratio is obtained by stacking a plurality of magnetic layers in which the composition distribution of Cr changes in the film thickness direction and by combining with a ring recording head. It is described that it is done. However, the film thickness of this magnetic recording layer is 100 nm to 1000 n.
When the magnetic recording layer is as thick as m and the magnetic recording layer is as thin as 50 nm, the Cr composition distribution does not change sufficiently in the film thickness direction. Therefore, there is a problem that the SNR cannot be improved.
【０００８】以上のように、垂直磁気記録媒体には、良
好な熱揺らぎ耐性及びＳＮＲを両立し、かつ磁気記録層
の厚さを薄くすることが望ましいという課題があった。As described above, the perpendicular magnetic recording medium has a problem that it is desirable to satisfy both good thermal fluctuation resistance and SNR and to make the thickness of the magnetic recording layer thin.
【０００９】[0009]
【発明が解決しようとする課題】本発明は、上記課題を
解決するためになされたものであり、熱揺らぎ耐性が良
好であり、かつ媒体ＳＮＲが高い磁気記録を実現するこ
とを目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to realize magnetic recording having good resistance to thermal fluctuation and high medium SNR.
【００１０】[0010]
【課題を解決するための手段】本発明の垂直磁気記録媒
体は、基板と、該基板上に形成され、そのエピタキシャ
ル成長が中断された垂直磁気記録層とを具備することを
特徴とする。A perpendicular magnetic recording medium of the present invention is characterized by comprising a substrate and a perpendicular magnetic recording layer formed on the substrate and whose epitaxial growth is interrupted.
【００１１】本発明の磁気記録再生装置は、基板、及び
該基板上に形成され、そのエピタキシャル成長が中断さ
れた垂直磁気記録層を有する垂直磁気記録媒体と、前記
磁気記録媒体を支持及び回転駆動する駆動手段と、前記
磁気記録媒体に対して情報の記録を行う単磁極記録ヘッ
ドとを具備する特徴とするA magnetic recording / reproducing apparatus of the present invention supports a substrate, and a perpendicular magnetic recording medium having a perpendicular magnetic recording layer formed on the substrate and whose epitaxial growth is interrupted, and a magnetic recording medium for supporting and rotating the perpendicular recording medium. A driving means and a single-pole recording head for recording information on the magnetic recording medium.
【００１２】[0012]
【発明の実施の形態】本発明の垂直磁気記録媒体は、基
板と、基板上に形成され垂直磁気記録層を有し、この垂
直磁気記録層は、その磁性粒子のエピタキシャル結晶成
長が中断された構成を有する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The perpendicular magnetic recording medium of the present invention has a substrate and a perpendicular magnetic recording layer formed on the substrate. In this perpendicular magnetic recording layer, epitaxial crystal growth of its magnetic grains is interrupted. Have a configuration.
【００１３】本発明によれば、垂直磁気記録層が、膜厚
方向に、その磁性粒子のエピタキシャル結晶成長が中断
された部分を有することにより、中断された部分を境に
一方で発生するノイズと、もう一方で発生させるノイズ
との一致を防ぎ、媒体シグナルノイズレート（ＳＮＲ）
を向上させることが可能となる。また、本発明に用いら
れる垂直磁気記録層は、膜厚方向に、エピタキシャル結
晶成長は中断されていても、磁気的には分断されない。
このため、磁化反転単位の膜厚方向の厚みが十分とな
り、良好な熱揺らぎ耐性が得られる。According to the present invention, since the perpendicular magnetic recording layer has a portion where the epitaxial crystal growth of the magnetic grains is interrupted in the film thickness direction, noise generated on the other hand at the interrupted portion is generated. , Media signal noise rate (SNR) by preventing matching with noise generated on the other side
It becomes possible to improve. Further, the perpendicular magnetic recording layer used in the present invention is not magnetically divided even if the epitaxial crystal growth is interrupted in the film thickness direction.
Therefore, the thickness of the magnetization reversal unit in the film thickness direction is sufficient, and good thermal fluctuation resistance can be obtained.
【００１４】垂直磁気記録層は、好ましくは二層以上の
構成を有する。The perpendicular magnetic recording layer preferably has a structure of two or more layers.
【００１５】また、垂直磁気記録層は、その厚さが好ま
しくは５０ｎｍないし５ｎｍ、さらに好ましくは３０ｎ
ｍないし１０ｎｍである。５ｎｍ未満であると、記録層
の磁化量が十分でなくなり、ヘッド出力が小さくなっ
て、これを用いて装置を組み立てた際にエラーレートが
とれなくなる傾向があり、５０ｎｍを超えると、ヘッド
の書き込み能力が十分でなくなり、記録分解能も低下す
る傾向がある。The thickness of the perpendicular magnetic recording layer is preferably 50 nm to 5 nm, more preferably 30 n.
m to 10 nm. If it is less than 5 nm, the amount of magnetization of the recording layer becomes insufficient, the head output becomes small, and when the device is assembled using this, the error rate tends to be unobtainable. The capacity tends to be insufficient and the recording resolution tends to decrease.
【００１６】エピタキシャル結晶成長が中断された構成
の一例として、基板上に、順に、第１の磁性層及び第２
の磁性層を有する垂直磁気記録層において、第１の磁性
層の磁性粒子の結晶の磁化容易軸が、第２の磁性層の磁
性粒子の結晶の磁化容易軸と一致しない場合があげられ
る。As an example of the structure in which the epitaxial crystal growth is interrupted, the first magnetic layer and the second magnetic layer are sequentially formed on the substrate.
In the perpendicular magnetic recording layer having the magnetic layer of No. 1, the easy magnetization axis of the crystal of the magnetic particles of the first magnetic layer does not coincide with the easy magnetization axis of the crystal of the magnetic particles of the second magnetic layer.
【００１７】図１に、互いに磁化容易軸の異なる二層の
磁性層を有する磁気記録媒体を表すモデル図を示す。FIG. 1 is a model diagram showing a magnetic recording medium having two magnetic layers having different axes of easy magnetization.
【００１８】図示するように、この磁気記録媒体は、基
板１上に、例えばバイアス付与層２、例えば軟磁性層
３、及び磁気記録層６が順に積層された構成を有する。
図中、矢印は、磁化容易軸を表す。この磁気記録層６
は、図示するように互いにその磁化容易軸が異なる第１
の磁性層４及び第２の磁性層５から構成される。なお、
第１の磁性層４及び第２の磁性層５中の複数の区画は、
各々膜厚方向にエピキシャル結晶成長された磁性粒子の
結晶断面を概略的に表す。As shown in the figure, this magnetic recording medium has a structure in which, for example, a bias applying layer 2, a soft magnetic layer 3, and a magnetic recording layer 6 are sequentially laminated on a substrate 1.
In the figure, the arrow indicates the easy axis of magnetization. This magnetic recording layer 6
As shown in the figure,
Of the magnetic layer 4 and the second magnetic layer 5. In addition,
The plurality of sections in the first magnetic layer 4 and the second magnetic layer 5 are
The crystal cross-sections of the magnetic particles that are each epitaxially grown in the film thickness direction are schematically shown.
【００１９】エピタキシャル成長が中断された構成の他
の例として、第１の磁性層と第２の磁性層において、そ
の磁性粒子の結晶粒径が互いに異なる場合があげられ
る。このとき、結晶粒径は、好ましくは５ｎｍないし２
０ｎｍである。また、結晶粒径の違いは、好ましくは２
ｎｍないし５ｎｍである。Another example of the structure in which the epitaxial growth is interrupted is that the crystal grain sizes of the magnetic particles in the first magnetic layer and the second magnetic layer are different from each other. At this time, the crystal grain size is preferably 5 nm to 2 nm.
It is 0 nm. The difference in crystal grain size is preferably 2
nm to 5 nm.
【００２０】図２に、互いに結晶粒径の異なる二層の磁
性層を有する磁気記録媒体を表すモデル図を示す。FIG. 2 is a model diagram showing a magnetic recording medium having two magnetic layers having different crystal grain sizes.
【００２１】図示するように、この磁気記録媒体は、磁
気記録層６の代わりに、互いに結晶粒径の異なる第１の
磁性層７及び第２の磁性層８からなる磁気記録層９を設
けること以外は、図１と同様の構成を有する。As shown in the figure, in this magnetic recording medium, instead of the magnetic recording layer 6, a magnetic recording layer 9 composed of a first magnetic layer 7 and a second magnetic layer 8 having different crystal grain sizes is provided. Except for this, the configuration is the same as that of FIG.
【００２２】このようなエピタキシャル結晶成長が中断
された構成を得るには、例えば第２の磁性層の格子定数
を、第１の磁性層の格子定数に対し４％以上小さいか、
あるいは２％以上大きくすることができる。To obtain such a structure in which the epitaxial crystal growth is interrupted, for example, the lattice constant of the second magnetic layer is smaller than the lattice constant of the first magnetic layer by 4% or more, or
Alternatively, it can be increased by 2% or more.
【００２３】第２の磁性層の格子定数が第１の磁性層の
格子定数に対し、−４より大きく＋２より小さい場合、
第２の磁性層と第１の磁性層の界面に発生する歪みエネ
ルギーが大きくなり、第２の磁性層と第１の磁性層の磁
化容易軸が傾いて一致しない傾向がある。When the lattice constant of the second magnetic layer is larger than -4 and smaller than +2 with respect to the lattice constant of the first magnetic layer,
The strain energy generated at the interface between the second magnetic layer and the first magnetic layer becomes large, and the easy magnetization axes of the second magnetic layer and the first magnetic layer tend to be tilted and do not match.
【００２４】また、エピタキシャル成長が中断された構
成を得るには、例えば第２の磁性層は、第１の磁性層を
形成した後、第１の磁性層表面に酸素を暴露し、第１の
磁性層の酸化層を形成し、その上に、第２の酸化層を形
成することができる。酸化層は、その深さが４ｎｍ以
下、好ましくは２ｎｍないし０．５ｎｍである。４ｎｍ
より大きい場合は、第１の磁性層と第２の磁性層の磁気
的結合が弱くなって熱揺らぎに弱くなり、０．５ｎｍ未
満である場合は、エピタキシャル成長となる傾向があ
る。In order to obtain a structure in which the epitaxial growth is interrupted, for example, the second magnetic layer is formed by forming the first magnetic layer and then exposing the surface of the first magnetic layer to oxygen to form the first magnetic layer. An oxide layer of the layer can be formed and a second oxide layer can be formed thereon. The oxide layer has a depth of 4 nm or less, preferably 2 nm to 0.5 nm. 4 nm
When it is larger, the magnetic coupling between the first magnetic layer and the second magnetic layer is weakened and weak against thermal fluctuation, and when it is less than 0.5 nm, epitaxial growth tends to occur.
【００２５】第２の磁性層の格子定数を、第１の磁性層
の格子定数に対し４％以上小さいか、あるいは２％以上
大きくする例としては、第１及び第２の磁性層を、コバ
ルト系磁性層とし、第１の磁性層にプラチナを５ａｔ％
以下、第２の磁性層にプラチナを２４ａｔ％以上、好ま
しくは２５ないし４０ａｔ％添加することができる。As an example of increasing the lattice constant of the second magnetic layer by 4% or more or by 2% or more with respect to the lattice constant of the first magnetic layer, the first and second magnetic layers are formed of cobalt. 5 at% of platinum in the first magnetic layer as the system magnetic layer
Hereinafter, platinum can be added to the second magnetic layer at 24 at% or more, preferably 25 to 40 at%.
【００２６】また、このような例として、磁気記録層を
３つのコバルト系磁性層の積層体にして、第１及び第３
の磁性層はプラチナを２４ａｔ％以上、好ましくは２５
ないし７５ａｔ％、第２の磁性層はプラチナを５ａｔ％
以下添加することができる。In this example, the magnetic recording layer is a laminated body of three cobalt-based magnetic layers, and the first and third magnetic recording layers are formed.
The magnetic layer of platinum is at least 24 at%, preferably 25
To 75 at%, the second magnetic layer contains 5 at% platinum.
The following can be added.
【００２７】図３に、３層の磁性層を積層した磁気記録
層を有する磁気記録媒体の一例を表す図を示す。FIG. 3 shows an example of a magnetic recording medium having a magnetic recording layer in which three magnetic layers are laminated.
【００２８】図示するように、この磁気記録媒体は、磁
気記録層６の代わりに、互いに結晶粒径の異なる第１の
磁性層１４、第２の磁性層１５及び第３の磁性層１６か
らなる磁気記録層１７を設けること以外は、図１と同様
の構成を有する。As shown in the figure, this magnetic recording medium is composed of a first magnetic layer 14, a second magnetic layer 15 and a third magnetic layer 16 having different crystal grain sizes instead of the magnetic recording layer 6. The structure is the same as that of FIG. 1 except that the magnetic recording layer 17 is provided.
【００２９】さらに、本発明によれば、２層以上の磁性
層の任意の層間に中間層を設けることができる。Furthermore, according to the present invention, an intermediate layer can be provided between any two or more magnetic layers.
【００３０】中間層としては、例えば第１及び第２の磁
性層をコバルト系磁性層とし、各々プラチナを２０ａｔ
％以下、好ましくは５ないし２０ａｔ％含み、かつ第１
及び第２の磁性層の間に、例えばルテニウムチタン、及
びハフニウムからなる群から選択される金属を含む中間
層をさらに設けることができる。これにより、磁気記録
層では、第２の記録層は、第１の記録層の磁化容易軸に
対し、その磁化容易軸が傾いて成長される。As the intermediate layer, for example, the first and second magnetic layers are cobalt-based magnetic layers, and each platinum is 20 at.
% Or less, preferably 5 to 20 at%, and the first
An intermediate layer containing a metal selected from the group consisting of ruthenium titanium and hafnium can be further provided between the second magnetic layer and the second magnetic layer. As a result, in the magnetic recording layer, the second recording layer is grown with the easy axis of magnetization inclined to the easy axis of the first recording layer.
【００３１】図４に、第１及び第２の磁性層間に中間層
を設けた磁気記録媒体の一例を表す図を示す。FIG. 4 is a diagram showing an example of a magnetic recording medium in which an intermediate layer is provided between the first and second magnetic layers.
【００３２】図示するように、この磁気記録媒体は、磁
気記録層６の代わりに、例えばＣｏ−６６ａｔ％，Ｐｔ
−１８ａｔ％，Ｃｒ−１６ａｔ％からなる第１の磁性層
１０、例えばハフニウムからなる中間層１１、及び第１
の磁性層１０と同組成の第２の磁性層１２から構成され
る磁気記録層１３を設ける以外は、図１と同様の構成を
有する。As shown in the figure, this magnetic recording medium has, for example, Co-66 at%, Pt instead of the magnetic recording layer 6.
-18 at% and Cr-16 at% of the first magnetic layer 10, for example, hafnium intermediate layer 11, and the first magnetic layer 10.
The magnetic recording layer 13 has the same structure as that of FIG. 1 except that the magnetic recording layer 13 including the second magnetic layer 12 having the same composition as that of
【００３３】また、例えば第１及び第２の磁性層を、Ｈ
ＣＰ相コバルト系磁性層とし、各々プラチナを２０ａｔ
％以上、好ましくは２０ないし３０ａｔ％含み、かつ第
１及び第２の磁性層の間にｂｃｃ相クロムを含む中間層
をさらに設けることができる。これにより、磁気記録層
は、第２の磁性層は、第１の磁性層の磁化容易軸に対
し、その磁化容易軸が傾いて成長される。In addition, for example, the first and second magnetic layers are made to be H
CP phase cobalt-based magnetic layer, platinum at 20 at each
% Or more, preferably 20 to 30 at%, and an intermediate layer containing bcc phase chromium can be further provided between the first and second magnetic layers. As a result, the magnetic recording layer and the second magnetic layer are grown with the easy axis of magnetization inclined to the easy axis of the first magnetic layer.
【００３４】第１及び第２の磁性層の間に例えば炭素等
の非晶質の中間層をさらに設けることができる。これに
より、磁気記録層は第２の磁性層は、第１の磁性層の磁
化容易軸に対し、その磁化容易軸が傾いて成長される。An amorphous intermediate layer of, for example, carbon can be further provided between the first and second magnetic layers. As a result, the magnetic recording layer and the second magnetic layer are grown with the easy axis of magnetization inclined to the easy axis of the first magnetic layer.
【００３５】また、本発明に使用される垂直磁気記録層
の材料としては、例えばＣｏＣｒＰｔ系合金、ＣｏＣｒ
ＰｔＯ系合金、ＦｅＰｔ規則合金、及びＣｏ/ＰｄＣｏ/
ＰｔＦｅ/Ｐｔの人工格子等があげられる。The material of the perpendicular magnetic recording layer used in the present invention is, for example, a CoCrPt-based alloy or CoCr.
PtO-based alloy, FePt ordered alloy, and Co / PdCo /
An artificial lattice of PtFe / Pt and the like can be given.
【００３６】また、本発明の垂直磁気記録媒体では、基
板と磁気記録層との間に、基板上に設けられたバイアス
付与層及びバイアス付与層上に設けられた軟磁性層をさ
らに設けることができる。In the perpendicular magnetic recording medium of the present invention, a bias applying layer provided on the substrate and a soft magnetic layer provided on the bias applying layer are further provided between the substrate and the magnetic recording layer. it can.
【００３７】バイアス付与層としては、例えばＣｏＣｒ
Ｐｔ合金、ＣｏＳｎ合金、ＣｏＰｔＯ合金、及びＦｅＰ
ｔ合金があげられる。As the bias applying layer, for example, CoCr
Pt alloy, CoSn alloy, CoPtO alloy, and FeP
An example is t-alloy.
【００３８】基板とバイアス付与層との間には、例えば
ＮｉＡｌ、ＴｉＮ、銅、及びＭｇＯ等のシード層、及び
例えばＣｒ合金、Ｖ合金、及びＲｕ合金等の下地層を設
けることができる。A seed layer of, for example, NiAl, TiN, copper, and MgO, and an underlayer of, for example, Cr alloy, V alloy, and Ru alloy can be provided between the substrate and the bias applying layer.
【００３９】また、垂直磁気記録層を形成する前に、例
えばＴｉ、銅、ＭｇＯ等のシード層、及び例えばＲｕ、
及び非磁性ＣｏＣｒ等の下地層を設けることができる。Before forming the perpendicular magnetic recording layer, a seed layer of, for example, Ti, copper, MgO, etc., and, for example, Ru,
And an underlayer of non-magnetic CoCr or the like can be provided.
【００４０】また、本発明の磁気記録再生装置は、上述
の垂直磁気記録体と、磁気記録媒体を支持及び回転駆動
する駆動手段と、磁気記録媒体に対して情報の記録を行
う単磁極記録ヘッドとを具備する。Further, the magnetic recording / reproducing apparatus of the present invention comprises the above-mentioned perpendicular magnetic recording body, a driving means for supporting and rotating the magnetic recording medium, and a single magnetic pole recording head for recording information on the magnetic recording medium. And.
【００４１】図５に、本発明にかかる磁気記録再生装置
の一例を一部分解した斜視図を示す。FIG. 5 is a partially exploded perspective view of an example of the magnetic recording / reproducing apparatus according to the present invention.
【００４２】本発明に係る情報を記録するための剛構成
の磁気ディスク１２１はスピンドル１２２に装着されて
おり、図示しないスピンドルモータによって一定回転数
で回転駆動される。磁気ディスク１２１にアクセスして
情報の記録行う単磁極型記録ヘッド及び情報の再生を行
うためのＭＲヘッドを搭載したスライダー１２３は、薄
板状の板ばねからなるサスペンション１２４の先端に取
付けられている。サスペンション１２４は図示しない駆
動コイルを保持するボビン部等を有するアーム１２５の
一端側に接続されている。A rigid magnetic disk 121 for recording information according to the present invention is mounted on a spindle 122 and is rotationally driven at a constant rotational speed by a spindle motor (not shown). A slider 123 having a single magnetic pole type recording head for accessing the magnetic disk 121 to record information and an MR head for reproducing information is attached to the tip of a suspension 124 made of a thin plate spring. The suspension 124 is connected to one end side of an arm 125 having a bobbin portion for holding a drive coil (not shown).
【００４３】アーム１２５の他端側には、リニアモータ
の一種であるボイスコイルモータ１２６が設けられてい
る。ボイスコイルモータ１２６は、アーム１２５のボビ
ン部に巻き上げられた図示しない駆動コイルと、それを
挟み込むように対向して配置された永久磁石および対向
ヨークにより構成される磁気回路とから構成されてい
る。At the other end of the arm 125, a voice coil motor 126, which is a kind of linear motor, is provided. The voice coil motor 126 is composed of a drive coil (not shown) wound around a bobbin of the arm 125, and a magnetic circuit composed of a permanent magnet and a facing yoke that are arranged to face each other so as to sandwich the drive coil.
【００４４】アーム１２５は、固定軸１２７の上下２カ
所に設けられた図示しないボールベアリングによって保
持され、ボイスコイルモータ１２６によって回転揺動駆
動される。すなわち、磁気ディスク１２１上におけるス
ライダー１２３の位置は、ボイスコイルモータ１２６に
よって制御される。なお、図５中、１２８は蓋体を示し
ている。The arm 125 is held by ball bearings (not shown) provided at two positions above and below the fixed shaft 127, and is rotated and rocked by the voice coil motor 126. That is, the position of the slider 123 on the magnetic disk 121 is controlled by the voice coil motor 126. In FIG. 5, reference numeral 128 denotes a lid.
【００４５】以下、実施例を示し、本発明をより具体的
に説明する。Hereinafter, the present invention will be described more specifically by showing examples.
【００４６】[0046]
【実施例】実施例１
まず、２．５インチ結晶化ガラス基板を用意した。この
２．５インチ結晶化ガラス基板上に、ＮｉＡｌのシード
層、Ｃｒ合金下地膜、及びＣｏ68Ｃｒ12Ｐｔ20合金面内
硬磁性膜を順にスパッタにより、各々、５ｎｍ、１０ｎ
ｍ、及び３０ｎｍ形成した。その後、ＣｏＣｒＰｔ合金
面内硬磁性膜上に、ＣｏＺｒＮｂ軟磁性膜をスパッタに
より１５０ｎｍ形成した。この上に、垂直記録層用Ｔｉ
合金シード層、及びＲｕ合金下地層を形成し、Ｃｏ73Ｐ
ｔ5Ｃｒ22合金膜よりなる第１の垂直磁性層を１５ｎｍ
スパッタにより形成し、さらにこの上に、第１の垂直磁
性層とは格子定数が２％以上大きくなるようにターゲッ
トのＰｔ組成を選んだ第２の垂直磁性層をＣｏ64Ｐｔ24
Ｃｒ12組成ターゲットを用いて、酸素を含むＡｒガス雰
囲気中で１５ｎｍ厚形成した。さらにこの上に、ＣＤＶ
カーボンを６ｎｍ形成し、パーフロロポリエーテル潤滑
剤をディップして、垂直磁気記録媒体を作製した。最後
に、得られた面内硬磁性膜を半径方向に着磁した。Example 1 First, a 2.5 inch crystallized glass substrate was prepared. On this 2.5 inch crystallized glass substrate, a NiAl seed layer, a Cr alloy underlayer, and a Co68Cr12Pt20 alloy in-plane hard magnetic film were sequentially sputtered to 5 nm and 10 n, respectively.
m and 30 nm. Then, a CoZrNb soft magnetic film having a thickness of 150 nm was formed on the CoCrPt alloy in-plane hard magnetic film by sputtering. On top of this, Ti for the perpendicular recording layer
An alloy seed layer and a Ru alloy underlayer are formed, and Co73P
The first perpendicular magnetic layer of t5Cr22 alloy film is 15 nm thick.
A second perpendicular magnetic layer, which is formed by sputtering and on which a Pt composition of the target is selected so that the lattice constant of the first perpendicular magnetic layer is larger than 2%, is Co64Pt24.
A Cr12 composition target was used to form a film having a thickness of 15 nm in an Ar gas atmosphere containing oxygen. On top of this, CDV
A perpendicular magnetic recording medium was manufactured by forming carbon to a thickness of 6 nm and dipping a perfluoropolyether lubricant. Finally, the obtained in-plane hard magnetic film was magnetized in the radial direction.
【００４７】図６に、得られた磁気記録媒体の構成を表
す概略断面図を示す。FIG. 6 is a schematic sectional view showing the structure of the obtained magnetic recording medium.
【００４８】図示するように、この磁気記録媒体は、
２．５インチ結晶化ガラス基板２１上に、ＮｉＡｌシー
ド層２２、Ｃｒ合金下地層２３、ＣｏＣｒＰｔ合金バイ
アス付与層２４、ＣｏＺｒＮｂ軟磁性層２５、Ｔｉ合金
シード層２６、Ｒｕ合金下地層２７、Ｃｏ73Ｐｔ5Ｃｒ2
2合金からなる第１の垂直磁性層２８、Ｃｏ64Ｐｔ24Ｃ
ｒ12からなる第２の垂直磁性層２９、及び保護層３０を
スパッタリングにより順に積層し、ＣＤＶカーボンから
なる保護層３０上にパーフロロポリエーテル潤滑層５１
がディップコーティング法により形成された構成を有す
る。As shown, this magnetic recording medium is
On a 2.5 inch crystallized glass substrate 21, a NiAl seed layer 22, a Cr alloy underlayer 23, a CoCrPt alloy bias applying layer 24, a CoZrNb soft magnetic layer 25, a Ti alloy seed layer 26, a Ru alloy underlayer 27, Co73Pt5Cr2.
First perpendicular magnetic layer 28 made of 2 alloy, Co64Pt24C
A second perpendicular magnetic layer 29 made of r12 and a protective layer 30 are sequentially stacked by sputtering, and a perfluoropolyether lubricating layer 51 is formed on the protective layer 30 made of CDV carbon.
Has a structure formed by a dip coating method.
【００４９】第１及び第２の垂直磁性層からなる磁気記
録層の断面構造を透過型電子顕微鏡（ＴＥＭ）により、
観察した。第１及び第２の垂直磁性層の境界が明確であ
り、膜厚方向のエピタキシャル成長がこの境界で中断し
ていた。この場合、第２の垂直磁性層のＨＣＰ構造粒子
と第１の垂直磁性層のＨＣＰ構造粒子のＣ軸の成長方向
すなわち結晶磁化容易軸に違いが見られた。The cross-sectional structure of the magnetic recording layer composed of the first and second perpendicular magnetic layers was observed by a transmission electron microscope (TEM).
I observed. The boundary between the first and second perpendicular magnetic layers was clear, and the epitaxial growth in the film thickness direction was interrupted at this boundary. In this case, a difference was observed in the growth direction of the C-axis of the HCP structure particles of the second perpendicular magnetic layer and the HCP structure particles of the first perpendicular magnetic layer, that is, the easy axis of crystal magnetization.
【００５０】得られた磁気記録媒体に、記録トラック幅
０．４ｕｍの単磁極記録ヘッドと再生トラック幅０．３
μｍのＧＭＲ再生ヘッドで記録・再生を行なった。４０
０ｋＦＣＩの媒体ノイズ（Ｎｍrms）と再生孤立波（Ｓ
Ｏ）の比ＳＮＲは、２３．０（ｄＢ）であった。得られ
た結果を下記表１に示す。On the obtained magnetic recording medium, a single magnetic pole recording head having a recording track width of 0.4 μm and a reproducing track width of 0.3 were used.
Recording and reproduction were performed with a μm GMR reproducing head. 40
0 kFCI medium noise (Nmrms) and reproduced solitary wave (S
The specific SNR of O) was 23.0 (dB). The obtained results are shown in Table 1 below.
【００５１】比較例１
比較として、第２の垂直磁性層を形成せず、第１の垂直
磁性層のみを膜厚３０ｎｍ形成する以外は、実施例１と
同様にして垂直磁気記録媒体を作製した。Comparative Example 1 For comparison, a perpendicular magnetic recording medium was prepared in the same manner as in Example 1 except that the second perpendicular magnetic layer was not formed and only the first perpendicular magnetic layer was formed to a thickness of 30 nm. .
【００５２】この膜の断面構造を観察したところ、記録
層の膜厚方向のエピタキシャル成長の中断はなかった。
ＳＮＲは、２０．５（ｄＢ）と低かった。得られた結果
を下記表１に示す。Observation of the cross-sectional structure of this film showed that the epitaxial growth in the film thickness direction of the recording layer was not interrupted.
The SNR was as low as 20.5 (dB). The obtained results are shown in Table 1 below.
【００５３】比較例２
比較として、第１の垂直磁性層を形成せず、第２の垂直
磁性層のみを膜厚３０ｎｍ形成する以外は、実施例１と
同様にして垂直磁気記録媒体を作製した。Comparative Example 2 For comparison, a perpendicular magnetic recording medium was prepared in the same manner as in Example 1 except that the first perpendicular magnetic layer was not formed and only the second perpendicular magnetic layer was formed to a thickness of 30 nm. .
【００５４】この膜の断面構造を観察したところ、記録
層の膜厚方向のエピタキシャル成長の中断はなかった。
ＳＮＲは、２０．３（ｄＢ）と低かった。得られた結果
を下記表１に示す。Observation of the sectional structure of this film revealed that the epitaxial growth in the film thickness direction of the recording layer was not interrupted.
The SNR was as low as 20.3 (dB). The obtained results are shown in Table 1 below.
【００５５】比較例３
比較として、第２の垂直磁性層とその格子定数をほぼ一
致させるように、第１の垂直磁性層として、Ｃｏ73Ｐｔ
15Ｃｒ12合金層をスパッタにより形成した以外は、実施
例１と同様にして垂直磁気記録媒体を作製した。Comparative Example 3 As a comparison, Co73Pt was used as the first perpendicular magnetic layer so that the lattice constants of the second perpendicular magnetic layer and the second perpendicular magnetic layer were substantially the same.
A perpendicular magnetic recording medium was produced in the same manner as in Example 1 except that the 15Cr12 alloy layer was formed by sputtering.
【００５６】この膜の断面構造を観察したところ、記録
層の膜厚方向のエピタキシャル成長の中断はなかった。
ＳＮＲは、２０．２（ｄＢ）と低かった。得られた結果
を下記表１に示す。Observation of the cross-sectional structure of this film showed that the epitaxial growth in the film thickness direction of the recording layer was not interrupted.
The SNR was as low as 20.2 (dB). The obtained results are shown in Table 1 below.
【００５７】比較例４
比較として、第２の垂直磁性層の格子定数とその格子定
数をほぼ一致させるように、第１の垂直磁性層として、
Ｃｏ68Ｐｔ20Ｃｒ12合金層をスパッタにより形成した以
外は、実施例１と同様にして垂直磁気記録媒体を作製し
た。Comparative Example 4 As a comparison, as the first perpendicular magnetic layer, the second perpendicular magnetic layer was made to have a lattice constant substantially equal to that of the second perpendicular magnetic layer.
A perpendicular magnetic recording medium was produced in the same manner as in Example 1 except that the Co68Pt20Cr12 alloy layer was formed by sputtering.
【００５８】この膜の断面構造を観察したところ、記録
層の膜厚方向のエピタキシャル成長の中断はなかった。
ＳＮＲは、２０．４（ｄＢ）と低かった。得られた結果
を下記表１に示す。Observation of the cross-sectional structure of this film showed that the epitaxial growth in the film thickness direction of the recording layer was not interrupted.
The SNR was as low as 20.4 (dB). The obtained results are shown in Table 1 below.
【００５９】実施例２
第１の垂直磁性層に対してその格子定数が＋２％以上に
なるように第２の垂直磁性層材料からＣｒを除いて第２
の垂直磁性層を形成する以外は実施例１と同様にして、
垂直磁気記録媒体を作製した。Example 2 The second perpendicular magnetic layer was prepared by removing Cr from the second perpendicular magnetic layer material so that the lattice constant of the first perpendicular magnetic layer would be + 2% or more.
In the same manner as in Example 1 except that the perpendicular magnetic layer of
A perpendicular magnetic recording medium was produced.
【００６０】この膜の断面構造を観察したところ、記録
層の膜厚方向のエピタキシャル成長の中断がみられた。
ＳＮＲは、２３．３（ｄＢ）であった。得られた結果を
下記表１に示す。When the cross-sectional structure of this film was observed, the epitaxial growth in the film thickness direction of the recording layer was interrupted.
The SNR was 23.3 (dB). The obtained results are shown in Table 1 below.
【００６１】実施例３
第１の垂直磁性層に対してその格子定数が＋２％以上に
なるように第２の垂直磁性層中のＣｒ添加量を１８ａｔ
％とする以外は実施例１と同様にして、垂直磁気記録媒
体を作製した。Example 3 The amount of Cr added in the second perpendicular magnetic layer was 18 at so that the lattice constant of the first perpendicular magnetic layer was + 2% or more.
A perpendicular magnetic recording medium was produced in the same manner as in Example 1 except that the percentage was changed.
【００６２】この膜の断面構造を観察したところ、記録
層の膜厚方向のエピタキシャル成長の中断がみられた。
ＳＮＲは、２３．５（ｄＢ）であった。得られた結果を
下記表１に示す。When the cross-sectional structure of this film was observed, the epitaxial growth in the film thickness direction of the recording layer was interrupted.
The SNR was 23.5 (dB). The obtained results are shown in Table 1 below.
【００６３】実施例４
２．５インチ結晶化ガラス基板を用意した。この基板上
に、ＮｉＡｌのシード層、Ｃｒ合金下地層、及びＣｏ66
Ｃｒ18Ｐｔ16合金面内硬磁性膜をスパッタにより、順
次、各々、５ｎｍ、５ｎｍ、及び４０ｎｍ形成した。得
られた面内硬磁性膜を半径方向に着磁した。その後、得
られた面内硬磁性膜上にＣｏＺｒＮｂ軟磁性膜をスパッ
タにより１５０ｎｍ形成した。この上に、垂直記録層用
Ｔｉ合金シード層、Ｒｕ合金下地層を形成し、Ｃｏ64Ｐ
ｔ20Ｃｒ16合金組成のターゲットを用いて酸素を含むＡ
ｒガス雰囲気中でスパッタし、ＣｏＰｔＣｒＯ膜よりな
る第１垂直記録膜を１５ｎｍ形成した。さらに、この上
に、中間層として、第１の磁性膜の格子定数に対し、そ
の格子定数が２％以上大きいＲｕ90Ｔｉ10合金中間層を
３ｎｍ弱形成した。この上に、第２の垂直磁性層とし
て、Ｃｏ62Ｐｔ20Ｃｒ18合金膜を１５ｎｍ直接形成し
た。中間層の格子定数に対し第２の垂直磁性膜の格子定
数は４．０５％小さかった。さらに、この上に、ＣＤＶ
カーボンを６ｎｍスパッタ形成し、最後にパーフロロポ
リエーテル潤滑剤をディップコーティングして、垂直磁
気記録媒体を作製した。Example 4 A 2.5 inch crystallized glass substrate was prepared. On this substrate, a NiAl seed layer, a Cr alloy underlayer, and Co66
In-plane hard magnetic films of Cr18Pt16 alloy were sequentially formed by sputtering to have respective thicknesses of 5 nm, 5 nm, and 40 nm. The obtained in-plane hard magnetic film was magnetized in the radial direction. Then, a CoZrNb soft magnetic film having a thickness of 150 nm was formed on the obtained in-plane hard magnetic film by sputtering. A Ti alloy seed layer for the perpendicular recording layer and a Ru alloy underlayer are formed on this, and Co64P
A containing oxygen using a target of t20Cr16 alloy composition
Sputtering was performed in an r gas atmosphere to form a first perpendicular recording film of CoPtCrO film with a thickness of 15 nm. Further, a Ru90Ti10 alloy intermediate layer having a lattice constant larger than the lattice constant of the first magnetic film by 2% or more was formed thereon as an intermediate layer with a thickness of less than 3 nm. A Co62Pt20Cr18 alloy film having a thickness of 15 nm was directly formed thereon as a second perpendicular magnetic layer. The lattice constant of the second perpendicular magnetic film was 4.05% smaller than the lattice constant of the intermediate layer. Furthermore, on this, CDV
Carbon was sputtered to a thickness of 6 nm, and finally a perfluoropolyether lubricant was dip-coated to prepare a perpendicular magnetic recording medium.
【００６４】図７に、得られた磁気記録媒体の構成を表
す概略断面図を示す。FIG. 7 is a schematic sectional view showing the structure of the obtained magnetic recording medium.
【００６５】図示するように、この磁気記録媒体は、Ｒ
ｕ合金下地層２７上に、第１及び第２の垂直磁性層２
８，２９のかわりに、Ｃｏ64Ｐｔ20Ｃｒ16合金からなる
第１の垂直磁性層３１、Ｒｕ90Ｔｉ10合金中間層３２、
及びＣｏ68Ｐｔ20Ｃｒ18合金からなる第２の垂直磁性層
３３が設けられる以外は、実施例１と同様の構成を有す
る。As shown, this magnetic recording medium has an R
On the u alloy underlayer 27, the first and second perpendicular magnetic layers 2 are formed.
Instead of 8, 29, a first perpendicular magnetic layer 31 made of a Co64Pt20Cr16 alloy, a Ru90Ti10 alloy intermediate layer 32,
And the second perpendicular magnetic layer 33 made of Co68Pt20Cr18 alloy is provided, and the structure is the same as that of the first embodiment.
【００６６】この膜の断面構造をＴＥＭで観察したとこ
ろ、第１磁性膜と第２磁性膜との境界と考えられる膜厚
位置で、結晶の境界が明白となっており、上下の磁性膜
はエピタキシャル結晶成長が中断している様子が見られ
た。When the cross-sectional structure of this film was observed by TEM, the boundaries of crystals became clear at the film thickness position considered to be the boundary between the first magnetic film and the second magnetic film, and the upper and lower magnetic films were It was observed that the epitaxial crystal growth was interrupted.
【００６７】４００ｋＦＣＩの媒体ノイズ（Ｎｍrms）
と再生孤立波（ＳＯ）の比ＳＮＲは、２３．３（ｄＢ）
であった。得られた結果を下記表２に示す。Medium noise of 400 kFCI (Nmrms)
The ratio SNR of the reproduced solitary wave (SO) is 23.3 (dB)
Met. The obtained results are shown in Table 2 below.
【００６８】比較例５
比較例として、中間層の格子定数が第１の垂直磁性層の
１％以内、第２の垂直磁性層の格子定数が中間層の４％
以内となるように、Ｒｕ90Ｔｉ10合金中間層の代わりに
Ｃｕ中間層を用いた以外は、実施例４と同様にして垂直
磁気記録媒体を作製した。Comparative Example 5 As a comparative example, the lattice constant of the intermediate layer is within 1% of that of the first perpendicular magnetic layer, and the lattice constant of the second perpendicular magnetic layer is 4% of that of the intermediate layer.
A perpendicular magnetic recording medium was produced in the same manner as in Example 4 except that a Cu intermediate layer was used in place of the Ru90Ti10 alloy intermediate layer so that the content was within the range.
【００６９】この膜の断面構造をＴＥＭで観察したとこ
ろ、第１磁性膜と第２磁性膜がエピタキシャル成長して
いた。When the cross-sectional structure of this film was observed by TEM, the first magnetic film and the second magnetic film were epitaxially grown.
【００７０】４００ｋＦＣＩの媒体ノイズ（Ｎｍｒｍ
ｓ）と再生孤立波（ＳＯ）の比ＳＮＲは、２０．６（ｄ
Ｂ）と低かった。得られた結果を下記表２に示す。Medium noise of 400 kFCI (Nmrm
The ratio SNR between the s) and the reproduced solitary wave (SO) is 20.6 (d
B) was low. The obtained results are shown in Table 2 below.
【００７１】実施例５
Ｒｕ90Ｔｉ10合金中間層の代わりに、中間層の格子定数
が第２の記録層より２０％以上異なるＨｆを用いた以外
は、実施例４と同様にして垂直磁気記録媒体を作製し
た。Example 5 A perpendicular magnetic recording medium was prepared in the same manner as in Example 4 except that Hf having a lattice constant of the intermediate layer different from that of the second recording layer by 20% or more was used in place of the Ru90Ti10 alloy intermediate layer. did.
【００７２】この膜の断面構造をＴＥＭで観察したとこ
ろ、上下の磁性膜の磁化容易軸方向は一致していなかっ
た。When the cross-sectional structure of this film was observed by TEM, the easy magnetization axis directions of the upper and lower magnetic films did not match.
【００７３】４００ｋＦＣＩの媒体ノイズ（Ｎｍｒｍ
ｓ）と再生孤立波（ＳＯ）の比ＳＮＲは、２３．９（ｄ
Ｂ）であった。また、磁気記録層の保磁力の低下が顕著
となった。得られた結果を下記表２に示す。Medium noise of 400 kFCI (Nmrm
The ratio SNR between the s) and the reproduced solitary wave (SO) is 23.9 (d
B). Further, the coercive force of the magnetic recording layer was significantly reduced. The obtained results are shown in Table 2 below.
【００７４】実施例６
Ｒｕ90Ｔｉ10合金中間層の代わりに、中間層の格子定数
が第２の記録層より２．１８％異なり、ＢＣＣ構造を有
するＣｒ２ｎｍを形成した以外は、実施例４と同様にし
て垂直磁気記録媒体を作製した。Example 6 In the same manner as in Example 4 except that the Ru90Ti10 alloy intermediate layer was replaced with Cr2nm having a BCC structure in which the intermediate layer had a lattice constant different from that of the second recording layer by 2.18%. A perpendicular magnetic recording medium was produced.
【００７５】この膜の断面構造をＴＥＭで観察したとこ
ろ、第１及び第２の垂直磁性層の細密面の法線方向すな
わち磁化容易軸が異なっていた。When the cross-sectional structure of this film was observed by TEM, the normal direction of the close-packed surfaces of the first and second perpendicular magnetic layers, that is, the easy axis of magnetization was different.
【００７６】４００ｋＦＣＩの媒体ノイズ（Ｎｍｒｍ
ｓ）と再生孤立波（ＳＯ）の比ＳＮＲは、２３．２（ｄ
Ｂ）であった。得られた結果を下記表２に示す。Medium noise of 400 kFCI (Nmrm
The ratio SNR between the s) and the reproduced solitary wave (SO) is 23.2 (d).
B). The obtained results are shown in Table 2 below.
【００７７】実施例７
Ｒｕ90Ｔｉ10合金中間層の代わりに、スパッタにより形
成された非晶質のＣを用いた以外は、実施例４と同様に
して垂直磁気記録媒体を作製した。Example 7 A perpendicular magnetic recording medium was produced in the same manner as in Example 4 except that amorphous C formed by sputtering was used instead of the Ru90Ti10 alloy intermediate layer.
【００７８】この膜の断面構造をＴＥＭで観察したとこ
ろ、第１及び第２の垂直磁性層の結晶粒径が互いに異な
っていた。When the cross-sectional structure of this film was observed by TEM, the crystal grain sizes of the first and second perpendicular magnetic layers were different from each other.
【００７９】４００ｋＦＣＩの媒体ノイズ（Ｎｍｒｍ
ｓ）と再生孤立波（ＳＯ）の比ＳＮＲは、２３．６（ｄ
Ｂ）であった。得られた結果を下記表２に示す。Medium noise of 400 kFCI (Nmrm
The ratio SNR between the s) and the reproduced solitary wave (SO) is 23.6 (d
B). The obtained results are shown in Table 2 below.
【００８０】中間層に非晶質材料を用いた場合には、第
１及び第２の磁性層の結晶粒径に違いが認められた。結
晶粒径に違いが見られる場合、磁化遷移のジグザグ形状
が第１及び第２の磁性層で異なってくるため、ノイズ成
分が一致せず、平均化されて、ＳＮＲが向上する。When an amorphous material was used for the intermediate layer, a difference was found in the crystal grain sizes of the first and second magnetic layers. When there is a difference in the crystal grain size, the zigzag shape of the magnetization transition is different between the first and second magnetic layers, so the noise components do not match and are averaged, and the SNR is improved.
【００８１】実施例８
第１の垂直磁性層を形成した後、酸素ガス雰囲気にさら
し、第１の垂直磁性層上に酸化層を形成した後、第１の
垂直磁性層と同様の組成を有する第２の垂直磁性層を形
成する以外は、実施例４と同様にして磁気記録媒体を得
た。Example 8 After the first perpendicular magnetic layer was formed, it was exposed to an oxygen gas atmosphere to form an oxide layer on the first perpendicular magnetic layer, and then it had the same composition as the first perpendicular magnetic layer. A magnetic recording medium was obtained in the same manner as in Example 4 except that the second perpendicular magnetic layer was formed.
【００８２】この膜の断面構造をＴＥＭで観察したとこ
ろ、第１及び第２の垂直磁性層の磁化容易軸が互いに異
なっていた。When the cross-sectional structure of this film was observed by TEM, the easy magnetization axes of the first and second perpendicular magnetic layers were different from each other.
【００８３】４００ｋＦＣＩの媒体ノイズ（Ｎｍｒｍ
ｓ）と再生孤立波（ＳＯ）の比ＳＮＲは、２３．１（ｄ
Ｂ）であった。得られた結果を下記表２に示す。Medium noise of 400 kFCI (Nmrm
The ratio SNR between the s) and the reproduction solitary wave (SO) is 23.1 (d
B). The obtained results are shown in Table 2 below.
【００８４】実施例９
２．５インチ結晶化ガラス基板上に、ＮｉＡｌのシード
層、Ｃｒ合金下地層、及びＣｏ64Ｃｒ20Ｐｔ16合金面内
硬磁性膜を、順次、各々、５ｎｍ、５ｎｍ、及び５０ｎ
ｍ形成した。得られた面内硬磁性膜を半径方向に着磁し
た。得られた面内硬磁性膜上にＣｏＺｒＮｂ軟磁性膜を
１５０ｎｍ形成した。この上に、垂直記録層用Ｔｉ合金
シード層、Ｒｕ合金下地層を形成した。次に、Ｃｏ68Ｐ
ｔ20Ｃｒ12合金組成のターゲットを用いてＣｏＰｔＣｒ
合金膜よりなる第１垂直磁性層を１２ｎｍ形成した。さ
らに、この上に、第２の磁性層としてＣｏ74Ｐｔ5Ｃｒ2
0Ｂ1合金膜を５ｎｍ形成した。さらに、この上に、第３
の垂直磁性層として、Ｃｏ55Ｃｒ21Ｐｔ24合金膜を１２
ｎｍ形成した。最後に、この上に、ＣＤＶカーボンを６
ｎｍ形成し、パーフロロポリエーテル潤滑剤をディップ
して、垂直磁気記録媒体を作製した。Example 9 A NiAl seed layer, a Cr alloy underlayer, and a Co64Cr20Pt16 alloy in-plane hard magnetic film were sequentially formed on a 2.5-inch crystallized glass substrate at 5 nm, 5 nm, and 50 n, respectively.
m formed. The obtained in-plane hard magnetic film was magnetized in the radial direction. A 150 nm CoZrNb soft magnetic film was formed on the obtained in-plane hard magnetic film. On top of this, a Ti alloy seed layer for a perpendicular recording layer and a Ru alloy underlayer were formed. Next, Co68P
CoPtCr using a target of t20Cr12 alloy composition
A first perpendicular magnetic layer made of an alloy film was formed to a thickness of 12 nm. Further, on top of this, a second magnetic layer of Co74Pt5Cr2 is formed.
A 0B1 alloy film was formed to a thickness of 5 nm. Furthermore, on top of this, the third
Co55Cr21Pt24 alloy film is used as the perpendicular magnetic layer of
nm formed. Finally, add 6 CDV carbons on top of this
nm, and a perfluoropolyether lubricant was dipped to prepare a perpendicular magnetic recording medium.
【００８５】図８に、得られた磁気記録媒体の構成を表
す概略断面図を示す。FIG. 8 is a schematic sectional view showing the structure of the obtained magnetic recording medium.
【００８６】図示するように、この磁気記録媒体は、Ｒ
ｕ合金下地層２７上に、第１及び第２の垂直磁性層２
８，２９のかわりに、第１ないし第３の垂直磁性層３
５，３６，３７が形成されている以外は、実施例４と同
様の構成を有する第２の垂直磁性層は第１の垂直磁性層
よりも、その格子定数が１．６３％小さい、第３の垂直
磁性層は第２の垂直磁性層よりも、その格子定数が２．
１０％大きい。As shown in the figure, this magnetic recording medium has R
On the u alloy underlayer 27, the first and second perpendicular magnetic layers 2 are formed.
Instead of 8, 29, the first to third perpendicular magnetic layers 3
The second perpendicular magnetic layer having the same configuration as that of Example 4 except that Nos. 5, 36 and 37 are formed has a lattice constant smaller than that of the first perpendicular magnetic layer by 1.63%. The perpendicular magnetic layer of No. 2 has a lattice constant of 2. than the second perpendicular magnetic layer.
10% larger.
【００８７】第１ないし第３の垂直磁性層の断面構造を
観察したところ、第１の記録層と第２の記録層との間に
は成長の中断がみられなかった。しかしながら、第２の
磁性膜と第３の磁性膜との間で、エピタキシャル成長の
中断が見られた。この結果を下記表３に示す。Observation of the sectional structures of the first to third perpendicular magnetic layers revealed that no growth interruption was observed between the first recording layer and the second recording layer. However, interruption of epitaxial growth was observed between the second magnetic film and the third magnetic film. The results are shown in Table 3 below.
【００８８】比較例６
比較として、第２の垂直磁性層の格子定数が第１の垂直
磁性層及び第３の垂直磁性層と２％以内となるように、
第１の垂直磁性層としてＣｏ64Ｐｔ20Ｃｒ16合金層を使
用第２の垂直磁性層としてＣｏ62Ｐｔ22Ｃｒ16合金層を
使用する以外は実施例９と同様にして垂直磁気記録媒体
を作製した。Comparative Example 6 As a comparison, the lattice constant of the second perpendicular magnetic layer is kept within 2% of that of the first perpendicular magnetic layer and the third perpendicular magnetic layer.
A perpendicular magnetic recording medium was produced in the same manner as in Example 9 except that the Co64Pt20Cr16 alloy layer was used as the first perpendicular magnetic layer and the Co62Pt22Cr16 alloy layer was used as the second perpendicular magnetic layer.
【００８９】第１ないし第３の垂直磁性層の断面構造を
観察したところ、第１ないし第３の垂直磁性層との間
で、エピタキシャル成長していた。When the cross-sectional structure of the first to third perpendicular magnetic layers was observed, epitaxial growth was found between the first and third perpendicular magnetic layers.
【００９０】また、４００ｋＦＣＩの媒体ノイズ（Ｎｍ
ｒｍｓ）と再生孤立波（ＳＯ）の比ＳＮＲは、２０．４
（ｄＢ）であった。Also, the medium noise of 400 kFCI (Nm
rms) and reproduced solitary wave (SO) ratio SNR is 20.4
It was (dB).
【００９１】この結果を下記表３に示す。The results are shown in Table 3 below.
【００９２】[0092]
【表１】 [Table 1]
【００９３】[0093]
【表２】 [Table 2]
【００９４】[0094]
【表３】 [Table 3]
【００９５】[0095]
【発明の効果】本発明によれば、熱揺らぎ耐性が良好で
あり、かつ媒体ＳＮＲを向上した磁気記録を行うことが
できる。また、本発明によれば、磁気記録層の膜厚が５
０ｎｍ以下と薄い場合においても、磁気記録媒体の良好
な熱揺らぎ耐性及び高い媒体ＳＮＲを実現できる。According to the present invention, it is possible to perform magnetic recording having a good thermal fluctuation resistance and an improved medium SNR. Further, according to the present invention, the thickness of the magnetic recording layer is 5
Even when it is as thin as 0 nm or less, good thermal fluctuation resistance of the magnetic recording medium and high medium SNR can be realized.
【図１】 本発明の磁気記録媒体に用いられる磁気記録
層の結晶の状態の一例を表すモデル図FIG. 1 is a model diagram showing an example of a crystal state of a magnetic recording layer used in a magnetic recording medium of the present invention.
【図２】 本発明の磁気記録媒体に用いられる磁気記録
層の結晶の状態の他の一例を表すモデル図FIG. 2 is a model diagram showing another example of the crystal state of the magnetic recording layer used in the magnetic recording medium of the present invention.
【図３】 本発明の磁気記録媒体の構成の一例を表す断
面図FIG. 3 is a sectional view showing an example of the configuration of a magnetic recording medium of the present invention.
【図４】 本発明の磁気記録媒体の構成の他の一例を表
す断面図FIG. 4 is a sectional view showing another example of the configuration of the magnetic recording medium of the present invention.
【図５】 本発明の磁気記録再生装置の構成の一例を表
す概略図FIG. 5 is a schematic diagram showing an example of the configuration of a magnetic recording / reproducing apparatus of the present invention.
【図６】 本発明の磁気記録媒体の構成のさらに他の一
例を表す断面図FIG. 6 is a sectional view showing still another example of the configuration of the magnetic recording medium of the present invention.
【図７】 本発明の磁気記録媒体の構成のさらにまた他
の一例を表す断面図FIG. 7 is a sectional view showing still another example of the configuration of the magnetic recording medium of the present invention.
【図８】 本発明の磁気記録媒体の構成のさらにまた他
の一例を表す断面図FIG. 8 is a sectional view showing still another example of the configuration of the magnetic recording medium of the present invention.
１，２１…基板、２，２４…バイアス付与層、３，２５
…軟磁性層，４，７，１０，１４，２８，３２，３６…
第１の垂直磁性層、５，８，２９，３３，３７…第２の
垂直磁性層、６，９，１３，１７…磁気記録層1, 21 ... Substrate, 2, 24 ... Bias applying layer, 3, 25
... Soft magnetic layer, 4,7,10,14,28,32,36 ...
First perpendicular magnetic layer, 5, 8, 29, 33, 37 ... Second perpendicular magnetic layer, 6, 9, 13, 17 ... Magnetic recording layer
───────────────────────────────────────────────────── フロントページの続き (72)発明者 及川 壮一 東京都青梅市末広町２丁目９番地 株式会 社東芝青梅工場内 (72)発明者 中村 太 東京都青梅市末広町２丁目９番地 株式会 社東芝青梅工場内 (72)発明者 岩崎 剛之 東京都青梅市末広町２丁目９番地 株式会 社東芝青梅工場内 (72)発明者 酒井 浩志 千葉県市原市八幡海岸通５番の１ 昭和電 工エイチ・ディー株式会社内 (72)発明者 坂脇 彰 千葉県市原市八幡海岸通５番の１ 昭和電 工エイチ・ディー株式会社内 Ｆターム(参考） 5D006 BB01 BB08 CA03 CA06 DA03 DA08 FA09 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Soichi Oikawa 2-9 Suehiro-cho, Ome City, Tokyo Stock Market Company Toshiba Ome Factory (72) Inventor Futoshi Nakamura 2-9 Suehiro-cho, Ome City, Tokyo Stock Market Company Toshiba Ome Factory (72) Inventor Takeyuki Iwasaki 2-9 Suehiro-cho, Ome City, Tokyo Stock Market Company Toshiba Ome Factory (72) Inventor Hiroshi Sakai Showaden, 1-5, Hachiman Kaigan Dori, Ichihara, Chiba Within KHD Co., Ltd. (72) Inventor Akira Sakawaki Showaden, 1-5, Hachiman Kaigan Dori, Ichihara, Chiba Within KHD Co., Ltd. F-term (reference) 5D006 BB01 BB08 CA03 CA06 DA03 DA08 FA09
Claims (14)
タキシャル成長が中断された垂直磁気記録層とを具備す
ることを特徴とする垂直磁気記録媒体。1. A perpendicular magnetic recording medium comprising a substrate and a perpendicular magnetic recording layer formed on the substrate and whose epitaxial growth is interrupted.
層を含む請求項１に記載の垂直磁気記録媒体。2. The perpendicular magnetic recording medium according to claim 1, wherein the perpendicular magnetic recording layer includes two or more magnetic layers.
該第１の磁性層上に形成され、その磁性粒子の磁化容易
軸が、該第１の磁性層の磁性粒子の磁化容易軸と一致し
ない第２の磁性層とを含むことを特徴とする請求項２に
記載の垂直磁気記録媒体。3. The perpendicular magnetic recording layer is formed on the first magnetic layer and the first magnetic layer, and the easy axis of magnetization of the magnetic particles of the perpendicular magnetic recording layer is easy to magnetize the magnetic particles of the first magnetic layer. The perpendicular magnetic recording medium according to claim 2, further comprising a second magnetic layer which is not aligned with the axis.
該第１の磁性層上に形成され、その磁性粒子の結晶粒径
が、該第１の磁性層の磁性粒子の結晶粒径と異なる第２
の磁性層とを含むことを特徴とする請求項２に記載の垂
直磁気記録媒体。4. The perpendicular magnetic recording layer is formed on a first magnetic layer and the first magnetic layer, and the crystal grain size of the magnetic grains is the crystal grain of the magnetic grains of the first magnetic layer. Second different from the diameter
3. The perpendicular magnetic recording medium according to claim 2, further comprising:
上に酸素を暴露した後に形成されることを特徴とする請
求項３または４に記載の垂直磁気記録媒体。5. The perpendicular magnetic recording medium according to claim 3, wherein the second magnetic layer is formed after exposing the first magnetic layer to oxygen.
前記第１の磁性層の格子定数に対し４％以上小さいか、
あるいは２％以上大きいことを特徴とする請求項３に記
載の垂直磁気記録媒体。6. The second magnetic layer has a lattice constant of
4% or more smaller than the lattice constant of the first magnetic layer,
Alternatively, the perpendicular magnetic recording medium according to claim 3, which is larger by 2% or more.
系磁性層であって、さらに、前記第１の磁性層はプラチ
ナを５ａｔ％以下、前記第２の磁性層はプラチナを２４
ａｔ％以上含むことを特徴とする請求項６に記載の垂直
磁気記録媒体。7. The first and second magnetic layers are cobalt-based magnetic layers, and the first magnetic layer contains platinum at 5 at% or less, and the second magnetic layer contains platinum at 24%.
The perpendicular magnetic recording medium according to claim 6, wherein the perpendicular magnetic recording medium contains at% or more.
磁性層をさらに含み、前記第１、第２及び第３の磁性層
はコバルト系磁性層であって、該第１及び第３の磁性層
はプラチナを２４ａｔ％以上、該第２の磁性層はプラチ
ナを５ａｔ％以下含むことを特徴とする請求項６に記載
の垂直磁気記録媒体。8. A third magnetic layer formed on the second magnetic layer is further included, wherein the first, second and third magnetic layers are cobalt type magnetic layers. 7. The perpendicular magnetic recording medium according to claim 6, wherein the third magnetic layer contains platinum at 24 at% or more and the second magnetic layer contains platinum at 5 at% or less.
と、該第１の記録層上に形成された中間層と、該中間層
上に形成された第２の記録層とを具備することを特徴と
する請求項２に記載の垂直磁気記録媒体。9. The perpendicular magnetic recording layer comprises a first recording layer, an intermediate layer formed on the first recording layer, and a second recording layer formed on the intermediate layer. The perpendicular magnetic recording medium according to claim 2, wherein
ト系磁性層であって、かつプラチナを２０ａｔ％以下含
み、かつ第１及び第２の磁性層の間にルテニウムチタ
ン、及びハフニウムからなる群から選択される金属を含
む中間層をさらに有することを特徴とする請求項９に記
載の磁気記録媒体。10. The first and second magnetic layers are cobalt-based magnetic layers, contain platinum at 20 at% or less, and include ruthenium titanium and hafnium between the first and second magnetic layers. The magnetic recording medium according to claim 9, further comprising an intermediate layer containing a metal selected from the group consisting of:
ト系磁性層であって、かつプラチナを２０ａｔ％以上含
み、かつ第１及び第２の磁性層の間にクロムを含む中間
層をさらに有することを特徴とする請求項３または９に
記載の垂直磁気記録媒体。11. The first and second magnetic layers are cobalt-based magnetic layers, include an intermediate layer containing 20 at% or more of platinum, and containing chromium between the first and second magnetic layers. The perpendicular magnetic recording medium according to claim 3 or 9, further comprising:
中間層をさらに含む請求項４または９に記載の垂直磁気
記録媒体。12. The perpendicular magnetic recording medium according to claim 4, further comprising an amorphous intermediate layer between the first and second magnetic layers.
該基板上に設けられたバイアス付与層及び該バイアス付
与層上に設けられた軟磁性層をさらに有することを特徴
とする請求項１ないし１２のいずれか１項に記載の垂直
磁気記録媒体。13. Between the substrate and the magnetic recording layer,
13. The perpendicular magnetic recording medium according to claim 1, further comprising a bias applying layer provided on the substrate and a soft magnetic layer provided on the bias applying layer.
載の垂直磁気記録媒体と、 前記磁気記録媒体を支持及び回転駆動する駆動手段と、 前記磁気記録媒体に対して情報の記録を行う単磁極記録
ヘッドとを具備する特徴とする磁気記録再生装置。14. A perpendicular magnetic recording medium according to claim 1, drive means for supporting and rotating the magnetic recording medium, and a unit for recording information on the magnetic recording medium. A magnetic recording / reproducing apparatus comprising a magnetic pole recording head.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001358205A JP2003157516A (en) | 2001-11-22 | 2001-11-22 | Perpendicular magnetic recording medium and magnetic recorder |
| SG200205345A SG98071A1 (en) | 2001-11-22 | 2002-09-05 | Perpendicular magnetic recording medium and magnetic recording apparatus |
| US10/234,719 US20030096127A1 (en) | 2001-11-22 | 2002-09-05 | Perpendicular magnetic recording medium and magnetic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001358205A JP2003157516A (en) | 2001-11-22 | 2001-11-22 | Perpendicular magnetic recording medium and magnetic recorder |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003157516A true JP2003157516A (en) | 2003-05-30 |
Family
ID=19169418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001358205A Pending JP2003157516A (en) | 2001-11-22 | 2001-11-22 | Perpendicular magnetic recording medium and magnetic recorder |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20030096127A1 (en) |
| JP (1) | JP2003157516A (en) |
| SG (1) | SG98071A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007273054A (en) * | 2006-03-31 | 2007-10-18 | Fujitsu Ltd | Perpendicular magnetic recording medium and magnetic storage device |
| JP2008108395A (en) * | 2006-10-27 | 2008-05-08 | Hoya Corp | Perpendicular magnetic recording medium and its manufacturing method |
| US7923135B2 (en) | 2008-03-21 | 2011-04-12 | Fuji Electric Device Technology Co., Ltd. | Magnetic recording medium having a patterned exchange-coupling control layer and method of manufacturing same |
| US8329321B2 (en) | 2004-07-05 | 2012-12-11 | Fuji Electric Co., Ltd. | Perpendicular magnetic recording medium |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004355716A (en) * | 2003-05-29 | 2004-12-16 | Hitachi Global Storage Technologies Netherlands Bv | Magnetic recording medium |
| SG120182A1 (en) * | 2004-08-30 | 2006-03-28 | Agency Science Tech & Res | A recording medium |
| JP2006286105A (en) * | 2005-03-31 | 2006-10-19 | Fujitsu Ltd | Magnetic recording medium and magnetic storage device |
| JP2006294106A (en) * | 2005-04-08 | 2006-10-26 | Hitachi Global Storage Technologies Netherlands Bv | Magnetic recording medium |
| US20070099032A1 (en) * | 2005-11-02 | 2007-05-03 | Heraeus, Inc., A Corporation Of The State Of Arizona | Deposition of enhanced seed layer using tantalum alloy based sputter target |
| US20070190364A1 (en) * | 2006-02-14 | 2007-08-16 | Heraeus, Inc. | Ruthenium alloy magnetic media and sputter targets |
| US7550210B2 (en) * | 2006-03-09 | 2009-06-23 | Hitachi Global Storage Technologies Netherlands B.V. | Perpendicular magnetic recording medium with multiple exchange-coupled magnetic layers having substantially similar anisotropy fields |
| US7488545B2 (en) * | 2006-04-12 | 2009-02-10 | Hitachi Global Storage Technologies Netherlands B.V. | Perpendicular magnetic recording medium with laminated recording layers formed of exchange-coupled ferromagnetic layers |
| US20070292721A1 (en) * | 2006-04-25 | 2007-12-20 | Berger Andreas K | Perpendicular magnetic recording medium |
| JPWO2008126133A1 (en) * | 2007-03-19 | 2010-07-15 | 昭和電工株式会社 | Perpendicular magnetic recording medium |
| US7638210B2 (en) * | 2007-04-16 | 2009-12-29 | Hitachi Global Storage Technologies Netherlands B.V. | Perpendicular magnetic recording medium with exchange-coupled magnetic layers and improved coupling layer |
| US20090190267A1 (en) * | 2008-01-25 | 2009-07-30 | Xiaoping Bian | RuTi AS A SEED LAYER IN PERPENDICULAR RECORDING MEDIA |
| US10361361B2 (en) * | 2016-04-08 | 2019-07-23 | International Business Machines Corporation | Thin reference layer for STT MRAM |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4767516A (en) * | 1985-05-20 | 1988-08-30 | Sanyo Electric Co., Ltd. | Method for making magnetic recording media |
| JPS63228443A (en) * | 1987-03-17 | 1988-09-22 | Matsushita Electric Ind Co Ltd | Production of magneto-optical recording material |
| EP0559412B1 (en) * | 1992-03-02 | 1997-01-22 | TDK Corporation | Process for producing thin film by epitaxial growth |
| US5648885A (en) * | 1995-08-31 | 1997-07-15 | Hitachi, Ltd. | Giant magnetoresistive effect sensor, particularly having a multilayered magnetic thin film layer |
| JP4219021B2 (en) * | 1998-11-16 | 2009-02-04 | 独立行政法人科学技術振興機構 | Oxide artificial superlattice thin film and manufacturing method thereof |
-
2001
- 2001-11-22 JP JP2001358205A patent/JP2003157516A/en active Pending
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2002
- 2002-09-05 SG SG200205345A patent/SG98071A1/en unknown
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8329321B2 (en) | 2004-07-05 | 2012-12-11 | Fuji Electric Co., Ltd. | Perpendicular magnetic recording medium |
| JP2007273054A (en) * | 2006-03-31 | 2007-10-18 | Fujitsu Ltd | Perpendicular magnetic recording medium and magnetic storage device |
| JP2008108395A (en) * | 2006-10-27 | 2008-05-08 | Hoya Corp | Perpendicular magnetic recording medium and its manufacturing method |
| US7923135B2 (en) | 2008-03-21 | 2011-04-12 | Fuji Electric Device Technology Co., Ltd. | Magnetic recording medium having a patterned exchange-coupling control layer and method of manufacturing same |
Also Published As
| Publication number | Publication date |
|---|---|
| US20030096127A1 (en) | 2003-05-22 |
| SG98071A1 (en) | 2003-08-20 |
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