JP2003152151A - Power module - Google Patents

Power module

Info

Publication number
JP2003152151A
JP2003152151A JP2001349541A JP2001349541A JP2003152151A JP 2003152151 A JP2003152151 A JP 2003152151A JP 2001349541 A JP2001349541 A JP 2001349541A JP 2001349541 A JP2001349541 A JP 2001349541A JP 2003152151 A JP2003152151 A JP 2003152151A
Authority
JP
Japan
Prior art keywords
power
power element
thermoelectric
module
insulating substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001349541A
Other languages
Japanese (ja)
Inventor
Saemitsu Hayashi
賛恵光 林
Yuji Ishida
雄二 石田
Akira Sasaki
亮 佐々木
Yasuhiko Kawanami
靖彦 川波
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yaskawa Electric Corp
Original Assignee
Yaskawa Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yaskawa Electric Corp filed Critical Yaskawa Electric Corp
Priority to JP2001349541A priority Critical patent/JP2003152151A/en
Publication of JP2003152151A publication Critical patent/JP2003152151A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain a power module whose power element will not be collapsed by overheating and heat generated from the power element can be effectively utilized, and which is miniaturized, excellent in cooling and provided with a high long period reliability. SOLUTION: The power module is provided with an insulation substrate 2 fixed onto a metallic heat dissipating plate 1, a semiconductor power element 4 fixed to the insulation substrate 2, and a case 5 for receiving the power element fixed to the insulation substrate 2. A thermoelectric module 13 made by providing insulation substrates 13b, 13c on both sides of a thermoelectric semiconductor element 13a for effecting thermoelectric conversion is arranged at a position adhered or approximated to the power element. Further, the thermoelectric module can be provided on the outside surface of the heat dissipating plate and, in this case, the mounting part can be recessed.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】本発明は、パワー変換回路の
スイッチとして使用されるパワーモジュールに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power module used as a switch of a power conversion circuit.

【０００２】[0002]

【従来の技術】従来のパワーモジュールの概観の斜視図
を図３に、その側断面図を図４に示す。図において、１
はＣｕ等からなる金属製の放熱板であり、下面にヒート
シンクが固着されて冷却される。２はセラミクス等から
なる絶縁基板であり、両面に放熱板と同じ材質の金属を
ロー付けしてあり、上面側には回路の配線が施してあ
り、半田付け等により放熱板に固着してある。４はスイ
ッチングを行うＩＧＢＴ等の半導体からなる複数のパワ
ー素子の内の１つであり、半田３を介して絶縁基板２に
固着してある。５は樹脂ケースであり、内面側と上面側
に端部が突出するように電源側電極６と負荷側電極７と
信号電極８を内部に埋め込んであり、下面を放熱板１に
接着剤等で固着してある。電源側電極６は、Ａｌ等から
なる配線用の通電ワイヤ９を介して絶縁基板２上の回路
配線に接続されている。負荷側電極７は、通電ワイヤ９
を介してパワー素子４上面の通電電極に接続されてい
る。信号電極８は、信号ワイヤ１０を介してパワー素子
４上面の信号電極に接続されている。１１は樹脂ケース
５の上端内側に嵌め込まれる蓋である。１２は放熱板１
と樹脂ケース５で形成される空間に充填されるシリコー
ン等からなる絶縁性の充填材である。次に、このパワー
モジュールの電気的動作を説明する。図示しない外部の
制御回路から入力される制御信号は、信号電極８、信号
ワイヤ１０を介してパワー素子４に伝えられ、パワー素
子４がＯＮ／ＯＦＦのスイッチ動作を行う。その結果、
図示しない外部の電源と負荷がパワー素子４によって接
続／遮断される。ここで、パワー素子４にはＯＮ電圧が
あるため、パワー素子４がＯＮして通電する際には素子
自身に通電ロスを生じるとともに、ＯＮ／ＯＦＦのスイ
ッチング時にはスイッチングロスが生じる結果、パワー
素子４が発熱する。2. Description of the Related Art A general perspective view of a conventional power module is shown in FIG. 3, and a side sectional view thereof is shown in FIG. In the figure, 1
Is a metal heat dissipation plate made of Cu or the like, and a heat sink is fixed to the lower surface to cool it. Reference numeral 2 is an insulating substrate made of ceramics or the like, and metal of the same material as the heat sink is brazed on both sides, circuit wiring is provided on the upper surface side, and it is fixed to the heat sink by soldering or the like. . One of a plurality of power elements 4 made of a semiconductor such as an IGBT that performs switching is fixed to the insulating substrate 2 via the solder 3. Reference numeral 5 denotes a resin case, in which the power source side electrode 6, the load side electrode 7 and the signal electrode 8 are embedded so that the end portions project to the inner surface side and the upper surface side, and the lower surface is attached to the heat dissipation plate 1 with an adhesive or the like. It's stuck. The power supply side electrode 6 is connected to the circuit wiring on the insulating substrate 2 through a wiring conducting wire 9 made of Al or the like. The load side electrode 7 is a conducting wire 9
Is connected to the current-carrying electrode on the upper surface of the power element 4. The signal electrode 8 is connected to the signal electrode on the upper surface of the power element 4 via the signal wire 10. Reference numeral 11 denotes a lid fitted inside the upper end of the resin case 5. 12 is a heat sink 1
And an insulating filler made of silicone or the like that fills the space formed by the resin case 5. Next, the electrical operation of this power module will be described. A control signal input from an external control circuit (not shown) is transmitted to the power element 4 via the signal electrode 8 and the signal wire 10, and the power element 4 performs ON / OFF switching operation. as a result,
An external power source and a load (not shown) are connected / disconnected by the power element 4. Here, since the power element 4 has an ON voltage, when the power element 4 is turned on and energized, an energization loss occurs in the element itself, and a switching loss occurs during ON / OFF switching. Heats up.

【０００３】[0003]

【発明が解決しようとする課題】ところが、従来のパワ
ーモジュールでは、通電によるパワー素子からの発熱は
ヒートシンクを介して放熱しており、パワー素子が過熱
した場合、パワー素子が熱暴走して破壊してしまうとい
う問題があった。また、利用されていなかった。そこ
で、本発明は、過熱によるパワー素子の破壊がなく、パ
ワー素子からの発熱を有効に利用できる小形で冷却のよ
い長期信頼性の高いパワーモジュールを提供することを
目的とする。However, in the conventional power module, the heat generated from the power element due to energization is dissipated through the heat sink. When the power element overheats, the power element is thermally runaway and destroyed. There was a problem that it would end up. Also, it was not used. Therefore, it is an object of the present invention to provide a small-sized, highly reliable and long-term reliable power module that does not damage the power element due to overheating and can effectively utilize the heat generated from the power element.

【０００４】[0004]

【課題を解決するための手段】上記問題を解決するた
め、本発明は、金属製の放熱板上に固着された絶縁基板
と、前記絶縁基板に固着された半導体のパワー素子と、
前記絶縁基板に固着されたパワー素子を収納するケース
とを備えたパワーモジュールにおいて、前記パワー素子
に密着若しくは近接した位置に、熱電変換する熱電半導
体素子の両面に絶縁基板を設けた熱電モジュールを配置
した構成にしている。また、熱電モジュールを前記放熱
板の外側面に設けてもよく、その際、取付け部を凹部と
してもよい。本構成によれば、パワー素子の直下、また
は放熱板に熱電モジュールを設けたので、パワー素子の
過熱時には熱電モジュールに電圧を印加することにより
冷却できる。したがって、パワー素子を破壊から保護す
ることができる。また、通電によるパワー素子からの発
熱を有効に利用できる。In order to solve the above problems, the present invention provides an insulating substrate fixed on a metal heat dissipation plate, and a semiconductor power element fixed on the insulating substrate.
In a power module having a case for accommodating a power element fixed to the insulating substrate, a thermoelectric module having insulating substrates provided on both sides of a thermoelectric semiconductor element for thermoelectric conversion is arranged at a position in close contact with or close to the power element. It has the same configuration. Further, the thermoelectric module may be provided on the outer surface of the heat dissipation plate, in which case the mounting portion may be a recess. According to this configuration, since the thermoelectric module is provided immediately below the power element or on the heat dissipation plate, cooling can be performed by applying a voltage to the thermoelectric module when the power element overheats. Therefore, the power element can be protected from destruction. Further, heat generated from the power element due to energization can be effectively used.

【０００５】[0005]

【発明の実施の形態】以下、本発明の実施例を図に基づ
いて説明する。なお、従来例と同様の機能を成すものに
は同一の符号を付し、説明を省略する。 （第１実施例）図１は、本発明の第１実施例を示すパワ
ーモジュールの側断面図である。図において、１３は熱
電モジュールであり、熱電半導体素子１３ａ、絶縁基板
１３ｂ、絶縁基板１３ｃ、リード線１３ｄ、発電端子１
３ｅからなる。熱電モジュール１３は、Ｎ型およびＰ型
の熱電半導体素子１３ａを順番に並べて絶縁基板１３ｂ
と絶縁基板１３ｃとで挟み込んでいる。熱電半導体素子
１３ａ側となる絶縁基板１３ｂの下面、および絶縁基板
１３ｃの上面には熱電半導体素子１３ａが各々直列に接
続されるように回路配線が施してあり、熱電半導体素子
１３ａと絶縁基板１３ｂ、絶縁基板１３ｃは半田等によ
って固着されている。リード線１３ｄは、一方の端部が
絶縁基板１３ｂ、絶縁基板１３ｃ上の熱電半導体素子１
３ａが接続された回路配線に接続され、他端をケース１
に設けた発電端子１３ｅに接続されている。絶縁基板１
３ｂの上面には、パワー素子４を介して電源と負荷が接
続されるように回路配線が施してあり、パワー素子４、
および通電ワイヤ９が固着されている。絶縁基板１３ｃ
は、半田等によって放熱板１に固着されている。パワー
素子４は通電によって発熱し、放熱板１は図示しないヒ
ートシンクによって冷却されている。このため、熱電モ
ジュール１３の上面が高温側、下面が低温側となり、熱
電モジュール１３は高温側と低温側の温度差に応じて発
電することができ、発電端子１３ｅから電力を取り出す
ことが出来る。また、熱電モジュール１３は直流電流を
通電することで吸熱と発熱を発生することができる。こ
のため、発電端子１３ｅから熱電モジュール１３に発電
時とは逆方向に直流電流を通電することで熱電モジュー
ル１３のパワー素子４側が低温側となり、パワー素子４
を冷却して保護することが可能となる。 （第２実施例）図２は、本発明の第２実施例を示すパワ
ーモジュールの側断面図である。本実施例は、放熱板の
外側面に凹部１ａを設けた構造である。凹部１ａの上面
に熱電モジュール１３の絶縁基板１３ｂが固着してあ
る。凹部１ａの深さは、絶縁基板１３ｃの下面が放熱板
１の下面と同一となる深さになっている。通電によるパ
ワー素子４の発熱が絶縁基板２、放熱板１を伝わってく
るため熱電モジュール１３の上面が高温側となり、放熱
板１の下面は図示しないヒートシンクに固着されて冷却
されるので熱電モジュール１３の下面が低温側となり、
熱電モジュール１３は高温側と低温側の温度差に応じて
発電することができ、リード線１３ｄから電力を取り出
すことが出来る。また、パワー素子４の過熱時には、リ
ード線１３ｄから熱電モジュール１３に発電時とは逆方
向に直流電流を通電することで熱電モジュール１３のパ
ワー素子４側が低温側となり、パワー素子４を冷却して
保護することが可能となる。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. It should be noted that components having the same functions as those of the conventional example are designated by the same reference numerals and the description thereof will be omitted. (First Embodiment) FIG. 1 is a side sectional view of a power module showing a first embodiment of the present invention. In the figure, 13 is a thermoelectric module, which includes a thermoelectric semiconductor element 13a, an insulating substrate 13b, an insulating substrate 13c, a lead wire 13d, and a power generation terminal 1.
3e. The thermoelectric module 13 includes an insulating substrate 13b in which N-type and P-type thermoelectric semiconductor elements 13a are arranged in order.
And the insulating substrate 13c. Circuit wiring is provided on the lower surface of the insulating substrate 13b on the thermoelectric semiconductor element 13a side and the upper surface of the insulating substrate 13c so that the thermoelectric semiconductor elements 13a are connected in series, and the thermoelectric semiconductor element 13a and the insulating substrate 13b. The insulating substrate 13c is fixed by solder or the like. One end of the lead wire 13d is the insulating substrate 13b, and the thermoelectric semiconductor element 1 is on the insulating substrate 13c.
3a is connected to the connected circuit wiring, and the other end is case 1
Is connected to the power generation terminal 13e provided in the. Insulating substrate 1
Circuit wiring is provided on the upper surface of 3b so that the power source and the load are connected via the power element 4,
And the current-carrying wire 9 is fixed. Insulating substrate 13c
Are fixed to the heat dissipation plate 1 by solder or the like. The power element 4 generates heat when energized, and the heat sink 1 is cooled by a heat sink (not shown). Therefore, the upper surface of the thermoelectric module 13 is on the high temperature side and the lower surface is on the low temperature side, and the thermoelectric module 13 can generate power according to the temperature difference between the high temperature side and the low temperature side, and the power can be taken out from the power generation terminal 13e. Further, the thermoelectric module 13 can generate heat absorption and heat generation by passing a direct current. For this reason, the power element 4 side of the thermoelectric module 13 becomes the low temperature side by passing a direct current from the power generation terminal 13e to the thermoelectric module 13 in the direction opposite to that at the time of power generation.
It becomes possible to cool and protect. (Second Embodiment) FIG. 2 is a side sectional view of a power module showing a second embodiment of the present invention. The present embodiment has a structure in which a concave portion 1a is provided on the outer surface of the heat dissipation plate. The insulating substrate 13b of the thermoelectric module 13 is fixed to the upper surface of the recess 1a. The depth of the recess 1a is such that the lower surface of the insulating substrate 13c is the same as the lower surface of the heat dissipation plate 1. Since the heat generated by the power element 4 due to the energization is transmitted to the insulating substrate 2 and the heat dissipation plate 1, the upper surface of the thermoelectric module 13 becomes a high temperature side, and the lower surface of the heat dissipation plate 1 is fixed to a heat sink (not shown) and cooled, so that the thermoelectric module 13 is cooled. The lower surface of the becomes the low temperature side,
The thermoelectric module 13 can generate power according to the temperature difference between the high temperature side and the low temperature side, and can extract the electric power from the lead wire 13d. When the power element 4 is overheated, a DC current is passed from the lead wire 13d to the thermoelectric module 13 in a direction opposite to that at the time of power generation, so that the power element 4 side of the thermoelectric module 13 becomes a low temperature side and the power element 4 is cooled. It becomes possible to protect.

【０００６】[0006]

【発明の効果】以上述べたように、本発明によればパワ
ー素子の直下または放熱板に熱電モジュールを設ける構
成としたので、パワー素子からの発熱を効率的に吸収で
きる。したがって、パワー素子の破壊を防止できる。ま
た、通電によるパワー素子からの発熱を有効に利用でき
る。As described above, according to the present invention, since the thermoelectric module is provided immediately below the power element or on the heat dissipation plate, the heat generated from the power element can be efficiently absorbed. Therefore, destruction of the power element can be prevented. Further, heat generated from the power element due to energization can be effectively used.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の第１実施例を示すパワーモジュールの
側断面図FIG. 1 is a side sectional view of a power module showing a first embodiment of the present invention.

【図２】本発明の第２実施例を示すパワーモジュールの
側断面図FIG. 2 is a side sectional view of a power module showing a second embodiment of the present invention.

【図３】従来のパワーモジュールを示す側断面図FIG. 3 is a side sectional view showing a conventional power module.

【図４】従来のパワーモジュールを示す斜視図FIG. 4 is a perspective view showing a conventional power module.

【符号の説明】[Explanation of symbols]

１ 放熱板 １ａ 凹部 ２ 絶縁基板 ３ 半田 ４ パワー素子 ５ ケース ６ 電源側電極 ７ 負荷側電極 ８ 信号電極 ９ 通電ワイヤ １０ 信号ワイヤ １１ 蓋 １２ 充填材 １３ 熱電ジュール １３ａ 熱電半導体素子 １３ｂ 絶縁基板 １３ｃ 絶縁基板 １３ｄ リード線 １３ｅ 発電端子 1 heat sink 1a recess 2 insulating substrate 3 solder 4 power elements 5 cases 6 Power supply side electrode 7 Load side electrode 8 signal electrodes 9 energizing wire 10 signal wires 11 lid 12 Filling material 13 thermoelectric modules 13a Thermoelectric semiconductor element 13b insulating substrate 13c insulating substrate 13d lead wire 13e Power generation terminal

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 35/32 (72)発明者 川波 靖彦 福岡県北九州市八幡西区黒崎城石２番１号 株式会社安川電機内 Ｆターム(参考） 5F036 BA33 ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI theme code (reference) H01L 35/32 (72) Inventor Yasuhiko Kawanami 2-1, Kurosaki Shiroishi, Hachiman Nishi-ku, Kitakyushu, Fukuoka Prefecture Yasukawa Electric Co., Ltd. Inner F term (reference) 5F036 BA33

Claims (3)

【特許請求の範囲】[Claims] 【請求項１】 金属製の放熱板上に固着された絶縁基板
と、前記絶縁基板に固着された半導体のパワー素子と、
前記絶縁基板に固着されたパワー素子を収納するケース
とを備えたパワーモジュールにおいて、 前記パワー素子に密着若しくは近接した位置に、熱電変
換する熱電半導体素子の両面に絶縁基板を設けた熱電モ
ジュールを配置したことを特徴とするパワーモジュー
ル。1. An insulating substrate fixed on a metal heat dissipation plate, and a semiconductor power element fixed on the insulating substrate,
In a power module including a case for accommodating a power element fixed to the insulating substrate, a thermoelectric module having insulating substrates provided on both sides of a thermoelectric semiconductor element for thermoelectric conversion is arranged at a position in close contact with or close to the power element. A power module characterized by the above. 【請求項２】 前記熱電モジュールを放熱板の外側面に
設けたことを特徴とする請求項１記載のパワーモジュー
ル。2. The power module according to claim 1, wherein the thermoelectric module is provided on an outer surface of a heat dissipation plate. 【請求項３】 前記放熱板の外側面に凹部を設け、その
凹部に前記熱電モジュール取付けたことを特徴とする請
求項２記載のパワーモジュール。3. The power module according to claim 2, wherein a concave portion is provided on an outer surface of the heat dissipation plate, and the thermoelectric module is attached to the concave portion.
JP2001349541A 2001-11-15 2001-11-15 Power module Pending JP2003152151A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001349541A JP2003152151A (en) 2001-11-15 2001-11-15 Power module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001349541A JP2003152151A (en) 2001-11-15 2001-11-15 Power module

Publications (1)

Publication Number Publication Date
JP2003152151A true JP2003152151A (en) 2003-05-23

Family

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Family Applications (1)

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JP2001349541A Pending JP2003152151A (en) 2001-11-15 2001-11-15 Power module

Country Status (1)

Country Link
JP (1) JP2003152151A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107851705A (en) * 2015-07-23 2018-03-27 马自达汽车株式会社 Heat absorbing element and semiconductor device and the manufacture method of heat absorbing element including the heat absorbing element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107851705A (en) * 2015-07-23 2018-03-27 马自达汽车株式会社 Heat absorbing element and semiconductor device and the manufacture method of heat absorbing element including the heat absorbing element
CN107851705B (en) * 2015-07-23 2020-06-16 马自达汽车株式会社 Method for manufacturing heat-absorbing element

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