JP2003077626A - High-frequency power supply device - Google Patents
High-frequency power supply deviceInfo
- Publication number
- JP2003077626A JP2003077626A JP2001268459A JP2001268459A JP2003077626A JP 2003077626 A JP2003077626 A JP 2003077626A JP 2001268459 A JP2001268459 A JP 2001268459A JP 2001268459 A JP2001268459 A JP 2001268459A JP 2003077626 A JP2003077626 A JP 2003077626A
- Authority
- JP
- Japan
- Prior art keywords
- power supply
- frequency power
- supply device
- high frequency
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- General Induction Heating (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、誘導加熱用高周波
電源や電子レンジのマグネトロン駆動用高周波電源など
高周波電源装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency power supply device such as a high frequency power supply for induction heating and a high frequency power supply for driving a magnetron of a microwave oven.
【０００２】[0002]
【従来の技術】従来、誘導加熱や電子レンジのマグネト
ロン駆動用高周波電源として用いられてる高周波高周波
電源装置について図面を用いて説明する。図２７は、力
率及び波形歪みを改善し、かつ負荷に商用電源周期にお
いて電圧変動が少ない形で電力を供給できる従来の高周
波電源装置の回路構成を示す図である。商用電源１は、
並列に接続された整流ダイオード２０を介して、高周波
電流を供給する供給源として働く平滑コンデンサ２１に
接続される。チョークコイル３は、平滑コンデンサ２１
の正極と第１の半導体スイッチ６と第２の半導体スイッ
チ７の直列接続体の中点に接続される。ここで、第２の
半導体７のエミッタ端子は平滑コンデンサ２１の負極に
接続される。第１及び第２の半導体スイッチ６、７の直
列接続体には、第３のクランプコンデンサ２２が並列に
接続され、負荷１２と共振コンデンサ１０の直列接続体
は、第２の半導体スイッチ７に並列に接続される。ここ
で、負荷としては誘導加熱に用いられる被加熱物を含む
コイルや２次側に整流回路及びマグネトロンが接続され
た高周波トランスなど、一次側にコイル成分を支配的に
持つ負荷が接続されることになる。また、第１及び第２
の半導体スイッチ６、７には、それぞれ逆並列にダイオ
ードが接続されている。2. Description of the Related Art A high-frequency and high-frequency power supply device which has been conventionally used as a high-frequency power supply for induction heating and for driving a magnetron of a microwave oven will be described with reference to the drawings. FIG. 27 is a diagram showing a circuit configuration of a conventional high frequency power supply device capable of improving power factor and waveform distortion and supplying power to a load in a form in which voltage fluctuation is small in a commercial power supply cycle. The commercial power supply 1 is
Via a rectifying diode 20 connected in parallel, it is connected to a smoothing capacitor 21 which serves as a supply source for supplying a high frequency current. The choke coil 3 is a smoothing capacitor 21.
Is connected to the midpoint of the series connection body of the positive electrode of the first semiconductor switch 6 and the second semiconductor switch 7. Here, the emitter terminal of the second semiconductor 7 is connected to the negative electrode of the smoothing capacitor 21. The third clamp capacitor 22 is connected in parallel to the series connection body of the first and second semiconductor switches 6 and 7, and the series connection body of the load 12 and the resonance capacitor 10 is parallel to the second semiconductor switch 7. Connected to. Here, as a load, a load having a coil component predominantly is connected to the primary side, such as a coil containing an object to be heated used for induction heating or a high frequency transformer having a rectifier circuit and a magnetron connected to the secondary side. become. Also, the first and second
Diodes are connected in antiparallel to the semiconductor switches 6 and 7, respectively.
【０００３】図２８はインバータの各期間における電流
が流れる経路を示した図であり、図２９はそれに対応し
た動作波形図である。商用電源１は整流ダイオード２０
で整流され、平滑コンデンサ２１に電力を供給する。平
滑コンデンサ２１は高周波動作における電源として働く
ことになる。FIG. 28 is a diagram showing a path through which a current flows in each period of the inverter, and FIG. 29 is an operation waveform diagram corresponding thereto. Commercial power supply 1 is a rectifier diode 20
Is rectified by, and power is supplied to the smoothing capacitor 21. The smoothing capacitor 21 will act as a power source in high frequency operation.
【０００４】ここでは、平滑コンデンサ２１を電源とし
て、第２の半導体スイッチ７がオン状態から説明をはじ
める。この状態では図２８（ａ）に示すように平滑コン
デンサ２１→チョークコイル３→第２の半導体スイッチ
７の経路で電流が流れチョークコイル３にエネルギーを
蓄える動作と、共振コンデンサ１０→負荷１２→第２の
半導体スイッチ７の経路で負荷に電力を供給する動作が
同時に行われ、図２９のＩ７に示す電流が第２の半導体
スイッチ７に流れることになる。Here, the description starts with the second semiconductor switch 7 being in the ON state, using the smoothing capacitor 21 as a power source. In this state, as shown in FIG. 28A, the smoothing capacitor 21 → the choke coil 3 → the second semiconductor switch 7 causes a current to flow in the choke coil 3 to store energy, and the resonance capacitor 10 → the load 12 → the second The operation of supplying electric power to the load is simultaneously performed through the path of the second semiconductor switch 7, and the current indicated by I7 in FIG. 29 flows through the second semiconductor switch 7.
【０００５】第２の半導体スイッチ７を所定の時間でオ
フすると、図２８（ｂ）に示すように、平滑コンデンサ
２１→チョークコイル３→第１の半導体スイッチ６内の
ダイオード→第３のクランプコンデンサ２２の経路で電
流が流れ、第３のクランプコンデンサ２２にチョークコ
イル３のエネルギーを伝達する動作と、負荷１２→第１
の半導体スイッチ６内のダイオード→第３のクランプコ
ンデンサ２２→共振コンデンサ１０の経路で電流が流
れ、負荷１２内のインダクタンスに蓄えられたエネルギ
ーを、共振コンデンサ１０に蓄える動作が同時に行われ
る。When the second semiconductor switch 7 is turned off for a predetermined time, as shown in FIG. 28B, the smoothing capacitor 21 → the choke coil 3 → the diode in the first semiconductor switch 6 → the third clamp capacitor. A current flows through the path 22 to transfer the energy of the choke coil 3 to the third clamp capacitor 22, and the load 12 → first
In the semiconductor switch 6, a current flows through the path of the diode → the third clamp capacitor 22 → the resonance capacitor 10, and the energy stored in the inductance of the load 12 is stored in the resonance capacitor 10 at the same time.
【０００６】この第１の半導体スイッチ６内のダイオー
ドが導通している間に第１の半導体スイッチ６を導通状
態にしておくことにより、図２８（ｃ）に示すように共
振コンデンサ１０→第３のクランプコンデンサ２２→第
１の半導体スイッチ６→負荷１２の経路で負荷１２に電
力を供給する動作と、平滑コンデンサ２１→チョークコ
イル３→負荷１２→共振コンデンサ１０の経路でチョー
クコイル３にエネルギーを供給する動作が同時に行わ
れ、図２９のＩ６に示す電流が流れることになる。By keeping the first semiconductor switch 6 in the conducting state while the diode in the first semiconductor switch 6 is conducting, as shown in FIG. 28 (c), the resonance capacitor 10 → third Of the clamp capacitor 22 → first semiconductor switch 6 → load 12 to supply electric power to the load 12, and smoothing capacitor 21 → choke coil 3 → load 12 → resonance capacitor 10 The supply operation is performed at the same time, and the current indicated by I6 in FIG. 29 flows.
【０００７】第１の半導体スイッチ６を所定の時間でオ
フすると、図２８（ｄ）に示すように負荷１２→共振コ
ンデンサ１０→第２の半導体スイッチ７内のダイオード
の経路で負荷１２内のインダクタンスに蓄えられたエネ
ルギーを共振コンデンサ１０に蓄える動作と、平滑コン
デンサ２２→チョークコイル３→負荷１２→共振コンデ
ンサ１０の経路で電流が流れチョークコイル３にエネル
ギーを蓄える動作を同時に行うことになる。この第２の
半導体スイッチ７のダイオードに電流が流れている状態
で第２の半導体スイッチ７を導通状態にしておくこと
で、図２８（ａ）の状態に戻り、この動作を２０ｋＨｚ
〜５０ｋＨｚ程度の高周波で行うことにより、必要な電
力を得ることになる。When the first semiconductor switch 6 is turned off for a predetermined time, the load 12 → resonance capacitor 10 → the diode path in the second semiconductor switch 7 leads to the inductance in the load 12 as shown in FIG. 28 (d). The operation of storing the energy stored in the resonance capacitor 10 and the operation of storing the energy in the choke coil 3 at the same time as the current flows through the path of the smoothing capacitor 22 → the choke coil 3 → the load 12 → the resonance capacitor 10. By keeping the second semiconductor switch 7 conductive while the current is flowing in the diode of the second semiconductor switch 7, the state shown in FIG. 28A is restored, and this operation is performed at 20 kHz.
Necessary electric power can be obtained by performing a high frequency of about 50 kHz.
【０００８】このような動作をさせることで、図３０に
示す様に、負荷１２には、第３のクランプコンデンサ２
２の働きにより、商用電源１の電圧変化に対し、ある程
度平滑された形で電力供給することが可能となる。ま
た、商用電源１からの入力電流は、第２の半導体スイッ
チ７の動作を工夫することにより、力率の改善されたあ
るいは電源高調波成分の少ない電流を流すことが可能に
なる。By performing such an operation, as shown in FIG. 30, the third clamp capacitor 2 is connected to the load 12.
With the function of 2, it becomes possible to supply power in a smoothed form to a voltage change of the commercial power supply 1. Further, as for the input current from the commercial power source 1, by devising the operation of the second semiconductor switch 7, it becomes possible to flow a current with an improved power factor or a small power source harmonic component.
【０００９】[0009]
【発明が解決しようとする課題】しかし、このような従
来の高周波電源装置においては、第２の半導体スイッチ
７が、チョークコイル３と第３のクランプコンデンサ２
２に対する昇圧動作と負荷１２と共振コンデンサ１０に
対するインバータ動作を同時に行うため、素子責務が多
大になる。一方、第１の半導体スイッチ６は昇圧動作に
関わる補助スイッチとして使われるため、素子責務は第
２の半導体スイッチ７に比べかなり小さいものとなる。
このように素子責務が偏ることにより、冷却設計が難し
くなるとともに、一方素子のみ大電流素子を使う必要が
生じ、価格的にも効果なものになる課題が生じることに
なる。However, in such a conventional high frequency power supply device, the second semiconductor switch 7 includes the choke coil 3 and the third clamp capacitor 2.
Since the step-up operation for 2 and the inverter operation for the load 12 and the resonance capacitor 10 are performed at the same time, the element duty becomes large. On the other hand, since the first semiconductor switch 6 is used as an auxiliary switch related to the boost operation, the element duty is considerably smaller than that of the second semiconductor switch 7.
Due to such bias of element responsibilities, cooling design becomes difficult, and it becomes necessary to use a large current element for only one element, which causes a problem that it becomes cost effective.
【００１０】本発明は上記の課題を解決するもので、素
子責務を均一にできる構成を取ることにより、冷却設計
を簡易なものとすることができ、負荷に供給する電力を
平滑化でき、力率が良くしかも安価で、冷却能力に優れ
た高周波電源を提供することを目的としている。The present invention solves the above-mentioned problems, and by adopting a structure that can make the element duties uniform, the cooling design can be simplified, the power supplied to the load can be smoothed, and the power can be reduced. The purpose is to provide a high-frequency power source that has a high rate and is inexpensive, and that has an excellent cooling capacity.
【００１１】[0011]
【課題を解決するための手段】上記課題を解決するため
に本発明は、第１及び第２の半導体スイッチの直列接続
体と、前記第１及び第２の半導体スイッチの直列接続体
に並列接続される第１及び第２の整流ダイオードの直列
接続体と、前記１及び第２の整流ダイオードに各々並列
に接続される第１及び第２のクランプコンデンサと、前
記第１及び第２の半導体スイッチの接続点と第１及び第
２の整流ダイオードの接続点間に接続され、互いに直列
に接続される商用電源及びチョークコイルと、第１また
は第２の半導体スイッチの端子間に接続され、互いに直
列に接続される負荷と共振コンデンサからなる高周波電
源装置としている。In order to solve the above-mentioned problems, the present invention provides a series connection body of first and second semiconductor switches and a parallel connection body of the series connection body of the first and second semiconductor switches. Connected first and second rectifying diodes in series, first and second clamp capacitors respectively connected in parallel to the first and second rectifying diodes, and the first and second semiconductor switches Of the commercial power source and the choke coil connected in series with each other and between the terminals of the first and second semiconductor switches, and connected in series with each other. The high-frequency power supply device is composed of a load connected to and a resonant capacitor.
【００１２】これにより、負荷に供給する電力を平滑化
でき、力率が良くできるという利点を有した状態で、素
子責務を等分することができる構成をとることで、冷却
構成を簡易化でき、安価な高周波電源を実現できるもの
である。Thus, the cooling structure can be simplified by adopting a structure in which the electric power supplied to the load can be smoothed and the element duty can be equally divided while the power factor can be improved. It is possible to realize an inexpensive high frequency power supply.
【００１３】[0013]
【発明の実施の形態】請求項１に記載の発明は、第１及
び第２の半導体スイッチの直列接続体と、前記第１及び
第２の半導体スイッチの直列接続体に並列接続される第
１及び第２の整流ダイオードの直列接続体と、前記１及
び第２の整流ダイオードに各々並列に接続される第１及
び第２のクランプコンデンサと、前記第１及び第２の半
導体スイッチの接続点と第１及び第２の整流ダイオード
の接続点間に接続され、互いに直列に接続される商用電
源及びチョークコイルと、第１または第２の半導体スイ
ッチの端子間に接続され、互いに直列に接続される負荷
と共振コンデンサからなる高周波電源装置としている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The invention according to claim 1 is a first series connection body of first and second semiconductor switches, and a first series connection body of the first and second semiconductor switches connected in parallel. And a series connection body of second rectifier diodes, first and second clamp capacitors connected in parallel to the first and second rectifier diodes, respectively, and a connection point of the first and second semiconductor switches. A commercial power supply and a choke coil, which are connected between the connection points of the first and second rectifier diodes and are connected in series with each other, and a terminal of the first or second semiconductor switch, which are connected in series with each other. It is a high frequency power supply consisting of a load and a resonance capacitor.
【００１４】これにより、負荷に供給する電力を平滑化
でき、力率が良くできるという利点を有した状態で、素
子責務を等分することができる構成をとることで、冷却
構成を簡易化でき、安価な高周波電源を実現できるもの
である。Thus, the cooling structure can be simplified by adopting a structure in which the element duty can be equally divided while the power supplied to the load can be smoothed and the power factor can be improved. It is possible to realize an inexpensive high frequency power supply.
【００１５】請求項２に記載の発明は、特に、請求項１
に記載の第１及び第２の半導体スイッチは、順方向に導
通する半導体スイッチ素子とダイオードを逆並列に接続
してなることにより、ダイオードの定格を比較的容易に
変更することができ、素子の選択あるいは冷却設計の自
由度を増すことができる。The invention as defined in claim 2 is particularly defined by claim 1.
In the first and second semiconductor switches described in (1), by connecting the semiconductor switch element that conducts in the forward direction and the diode in antiparallel, the rating of the diode can be changed relatively easily, and The degree of freedom in selection or cooling design can be increased.
【００１６】請求項３に記載の発明は、特に、請求項１
または２に記載の第１及び第２のクランプコンデンサの
容量を数μＦ〜数十μＦのフィルムコンデンサで構成し
たことにより、価格的に安価のものとすることができ
る。The invention as defined in claim 3 is particularly defined by claim 1.
Alternatively, the capacitance of the first and second clamp capacitors described in 2 is constituted by a film capacitor of several μF to several tens of μF, so that the price can be reduced.
【００１７】請求項４に記載の発明は、特に、請求項１
または２に記載の第１及び第２のクランプコンデンサの
容量を略等しくしたことにより、商用電源の極性により
シンメトリックな動作をさせることができる。The invention as defined in claim 4 is particularly characterized by claim 1.
Alternatively, by setting the capacities of the first and second clamp capacitors described in 2 to be substantially equal to each other, it is possible to perform a symmetric operation depending on the polarity of the commercial power supply.
【００１８】請求項５に記載の発明は、特に、請求項１
〜４のいずれか１項に記載の第１または第２の半導体ス
イッチの少なくとも一方の端子間にコンデンサを接続し
たことにより、各半導体スイッチのターンオフ時の損失
を大幅に軽減でき、冷却構成を更に簡易化でき、安価な
高周波電源を実現できるものである。The invention described in claim 5 is particularly characterized by claim 1.
By connecting a capacitor between at least one terminal of the first or second semiconductor switch according to any one of 1 to 4, it is possible to significantly reduce the turn-off loss of each semiconductor switch, and to further improve the cooling configuration. It is possible to realize a high-frequency power source that can be simplified and is inexpensive.
【００１９】請求項６に記載の発明は、特に、請求項１
〜５のいずれか１項に記載の第１、第２の半導体スイッ
チの導通時間を商用電源電圧のピーク付近と谷間付近で
変化させることにより、商用電源の電圧の谷間付近でも
電流を流すことができるようになり、高調波成分の少な
い入力電流で動作できる高周波電源装置を実現できるも
のである。The invention according to claim 6 is particularly characterized by claim 1.
By changing the conduction time of the first and second semiconductor switches according to any one of 1 to 5 near the peak and valley of the commercial power supply voltage, current can flow even near the valley of the voltage of the commercial power supply. As a result, it is possible to realize a high-frequency power supply device that can operate with an input current with few harmonic components.
【００２０】請求項７に記載の発明は、特に、請求項１
〜６のいずれか１項に記載の第１、第２の半導体スイッ
チの導通時間を商用電源電圧の谷間付近でのスイッチン
グ周波数をピーク付近よりも低く設定することにより、
商用電源の電圧の谷間付近でもより電流を流すことがで
きるようになり、高調波成分の少ない入力電流で動作で
きる高周波電源装置を実現できるものである。The invention as defined in claim 7 is particularly defined by claim 1.
By setting the conduction time of the first and second semiconductor switches according to any one of 1 to 6 below the switching frequency near the valley of the commercial power supply voltage to be lower than near the peak,
The current can be made to flow even near the valley of the voltage of the commercial power supply, and the high frequency power supply device which can operate with the input current having less harmonic components can be realized.
【００２１】請求項８に記載の発明は、特に、請求項６
または７に記載の第１と第２の半導体スイッチの非導通
時間の重なりを、商用電源電圧のピーク付近では短く、
谷間付近では長く設定することにより、谷間付近での半
導体スイッチの短絡モード発生による損失を低減でき、
冷却構成の簡易化及び低ノイズの高周波電源を実現でき
るものである。The invention described in claim 8 is particularly characterized by claim 6.
Or, the overlap of the non-conduction times of the first and second semiconductor switches described in 7 is short near the peak of the commercial power supply voltage,
By setting it longer near the valley, the loss due to the short circuit mode of the semiconductor switch near the valley can be reduced,
It is possible to realize a simplified cooling structure and a low-noise high-frequency power source.
【００２２】請求項９に記載の発明は、特に、請求項１
〜５のいずれか１項に記載のチョークコイルに流れる電
流を検知する電流検出手段を設け、前記チョークコイル
の電流が正弦波になるように制御することにより、簡易
な構成で入力電流を正弦波に近づけることが可能とな
り、力率が良く高調波成分の少ない電流を供給できる高
周波電源を実現できるものである。The invention as defined in claim 9 is particularly defined by claim 1.
5. A current detecting means for detecting the current flowing through the choke coil according to any one of 5 to 5 is provided, and the input current is sine wave with a simple configuration by controlling the current of the choke coil to be a sine wave. Therefore, it is possible to realize a high frequency power supply that can supply a current with a high power factor and a small number of harmonic components.
【００２３】請求項１０に記載の発明は、特に、請求項
９に記載の電流検出手段の出力と比較する目標信号に上
限値と下限値を設け、前記電流検出手段の値が上限値と
下限値の間に収まるように、第１、第２の半導体スイッ
チの導通時間を決めることにより、簡易な回路構成で入
力電流を正弦波に近づけることが可能となり、力率が良
く高調波成分の少ない電流を供給できる高周波電源を実
現できるものである。According to a tenth aspect of the present invention, in particular, an upper limit value and a lower limit value are provided in the target signal to be compared with the output of the current detecting means according to the ninth aspect, and the value of the current detecting means is the upper limit value and the lower limit value. By determining the conduction time of the first and second semiconductor switches so that they fall within the range, it is possible to make the input current close to a sine wave with a simple circuit configuration, and the power factor is good and the harmonic components are small. It is possible to realize a high frequency power supply that can supply current.
【００２４】請求項１１に記載の発明は、特に、請求項
１０に記載の第１、第２の半導体スイッチの導通時間に
上限及び駆動周波数に下限を設けることにより、駆動周
波数が可聴域まで下がることを防止することができ、力
率が良く高調波成分の少ない電流を供給できる高周波電
源を実現できるものである。In the eleventh aspect of the invention, in particular, by setting the upper limit of the conduction time of the first and second semiconductor switches of the tenth aspect and the lower limit of the drive frequency, the drive frequency is lowered to the audible range. It is possible to realize a high-frequency power supply that can prevent this, supply a current with a high power factor and a small number of harmonic components.
【００２５】請求項１２に記載の発明は、特に、請求項
１〜５のいずれか１項に記載の第１または第２のクラン
プコンデンサの電圧を検知する電圧検出手段を設け、前
記電圧検出手段の電圧値が所定値になるように前記第１
及び第２の半導体スイッチの導通時間を設定することに
より、より簡易で安価な構成で入力電力の設定が可能に
なり、安価な高周波電源装置を実現できるものである。According to a twelfth aspect of the invention, in particular, a voltage detecting means for detecting the voltage of the first or second clamp capacitor according to any one of the first to fifth aspects is provided, and the voltage detecting means is provided. So that the voltage value of
Also, by setting the conduction time of the second semiconductor switch, the input power can be set with a simpler and cheaper configuration, and an inexpensive high frequency power supply device can be realized.
【００２６】請求項１３に記載の発明は、特に、請求項
１２に記載の電圧検出手段の電圧値が同じになるように
第１及び第２の半導体スイッチの導通時間を設定するこ
とにより、入力電流の直流成分流出を防ぐことが可能に
なり、偶数次の高調波の成分の少ない高周波電源装置を
実現できるものである。According to a thirteenth aspect of the invention, in particular, by setting the conduction times of the first and second semiconductor switches so that the voltage values of the voltage detecting means according to the twelfth aspect are the same, It is possible to prevent the direct current component of the current from flowing out, and it is possible to realize a high-frequency power supply device with a small number of even harmonic components.
【００２７】請求項１４に記載の発明は、特に、請求項
１〜５のいずれか１項に記載の構成で商用電源の入力に
入力電流検出手段を設け、前記入力電流検知手段の積分
値が零になるように、第１及び第２の半導体スイッチの
導通時間を設定することにより、入力電流の直流成分流
出を防ぐことが可能になり、偶数次の高調波の成分の少
ない高周波電源装置を実現できるものである。According to a fourteenth aspect of the present invention, in particular, the input current detection means is provided at the input of the commercial power source with the configuration according to any one of the first to fifth aspects, and the integrated value of the input current detection means is By setting the conduction times of the first and second semiconductor switches so as to be zero, it is possible to prevent the direct current component of the input current from flowing out, and to provide a high-frequency power supply device with few even-order harmonic components. It can be realized.
【００２８】[0028]
【実施例】（実施例１）本発明の第１の実施例について
図面を参照しながら説明する。本実施例は請求項１〜４
に係わる。(Embodiment 1) A first embodiment of the present invention will be described with reference to the drawings. The present embodiment includes claims 1 to 4.
Involved in
【００２９】図１は本実施例の高周波電源装置の回路構
成を示す図である。第１及び第２の半導体スイッチ６、
７の直列接続体には、第１及び第２のダイオード４、５
の直列接続体を並列接続している。第１及び第２のダイ
オード４、５にはそれぞれ第１及び第２のクランプコン
デンサ８、９がそれぞれ接続されており、第１及び第２
のダイオードの４、５の接続点と第１及び第２の半導体
スイッチ６、７の接続点の間には、商用電源１、フィル
タ２及びチョークコイル３の直列回路が接続されてい
る。また、第１の半導体スイッチには、共振コンデンサ
１０と負荷１２の直列回路が並列に接続されている。更
に、第１及び第２の半導体スイッチ６、７は制御手段１
４からの信号を受け動作することになる。ここで、負荷
１２に関しては、誘導加熱であれば平板コイルと鍋など
の被加熱物で構成され、マグネトロン用駆動電源であれ
ば２次側に整流回路とマグネトロンが接続された高圧ト
ランスで構成され、いずれの場合も１次側はインダクタ
ンス成分で構成される負荷になる。また、制御手段１４
は、入力電圧や供給電力に応じた指令値に従い、第１及
び第２の半導体スイッチ６、７の駆動を行うものであ
る。また、本実施例では第１及び第２の半導体スイッチ
６、７は順方向に導通するＩＧＢＴとこれに逆並列に接
続したダイオードで記載しているので、ダイオードの電
流耐量などの定格を変更することが比較的容易で、半導
体スイッチ及びダイオードの設計の自由度が大きくな
る。ただ、ＭＯＳＦＥＴのように素子内部にダイオード
を構成した素子を用いても、流れる電流あるいは温度上
昇が許容範囲を超えなければ問題ない。FIG. 1 is a diagram showing a circuit configuration of the high frequency power supply device of this embodiment. First and second semiconductor switches 6,
The series connection body of 7 includes the first and second diodes 4, 5
Are connected in parallel. First and second clamp capacitors 8 and 9 are connected to the first and second diodes 4 and 5, respectively.
A series circuit of the commercial power supply 1, the filter 2 and the choke coil 3 is connected between the connection points of the diodes 4, 5 and the connection points of the first and second semiconductor switches 6, 7. The series circuit of the resonance capacitor 10 and the load 12 is connected in parallel to the first semiconductor switch. Further, the first and second semiconductor switches 6 and 7 are the control means 1
4 will be operated by receiving the signal. Here, the load 12 is composed of a flat coil and an object to be heated such as a pan in the case of induction heating, and is composed of a high voltage transformer in which a rectifier circuit and a magnetron are connected to the secondary side in the case of a magnetron drive power supply. In any case, the primary side becomes a load composed of an inductance component. Also, the control means 14
Is for driving the first and second semiconductor switches 6 and 7 in accordance with a command value according to the input voltage and the supplied power. Further, in the present embodiment, the first and second semiconductor switches 6 and 7 are described as the IGBT which conducts in the forward direction and the diode connected in anti-parallel to the IGBT, so that the ratings such as the current withstanding capacity of the diode are changed. This is relatively easy, and the degree of freedom in designing semiconductor switches and diodes is increased. However, even if an element such as a MOSFET having a diode inside is used, there is no problem as long as the flowing current or the temperature rise does not exceed the allowable range.
【００３０】図２、図３はインバータ回路の各区間にお
ける電流経路を示した図であり、図４は図２に対応した
波形図である。また、図５は商用電源１の周期で見た場
合の波形図である。商用電源１の極性が図２の状態で第
１の半導体スイッチがオン状態から説明する。この状態
では図２（ａ）に示すように商用電源１→チョークコイ
ル３→第１のダイオード４→第１の半導体スイッチ６の
経路でチョークコイル３に電力を供給するモードと第１
の共振コンデンサ１０→第１の半導体スイッチ６→負荷
１２の経路で負荷に電力を供給するモードを同時に行
い、図４のＩ６に示す電流が半導体スイッチ６に流れる
とともに、Ｉ３に示す電流がチョークコイルに流れるこ
とになる。所定のオン時間が経過した後、第１の半導体
スイッチ６をオフすると、図２（ｂ）に示すように商用
電源１→チョークコイル３→第２のクランプコンデンサ
９→第２の半導体スイッチ７内のダイオードの経路でチ
ョークコイル３に蓄えられた電力を第２のクランプコン
デンサ９に蓄えるモードと負荷１２→第１の共振コンデ
ンサ→第１のクランプコンデンサ８→第２のクランプコ
ンデンサ９の経路で負荷１２のインダクタンス成分に蓄
えた電力を共振コンデンサ１０に放出するモードを同時
に行う様に動作する。ここで、第２のクランプコンデン
サ９は、チョークコイル３と第２の半導体スイッチ７内
のダイオードにより昇圧回路が形成されるため、図２の
極性の間は図５のＶ９に示す様にほぼ一定電圧に保つこ
とが可能となる。2 and 3 are diagrams showing current paths in each section of the inverter circuit, and FIG. 4 is a waveform diagram corresponding to FIG. Further, FIG. 5 is a waveform diagram when viewed in the cycle of the commercial power supply 1. The first semiconductor switch will be described in the ON state when the polarity of the commercial power source 1 is as shown in FIG. In this state, as shown in FIG. 2A, a mode in which electric power is supplied to the choke coil 3 through the path of the commercial power source 1 → the choke coil 3 → the first diode 4 → the first semiconductor switch 6 and the first mode.
The resonance capacitor 10 → first semiconductor switch 6 → load 12 is simultaneously operated in a mode for supplying power to the load, and a current I6 in FIG. 4 flows through the semiconductor switch 6 and a current I3 is applied to the choke coil. Will flow to. When the first semiconductor switch 6 is turned off after the lapse of a predetermined on-time, the commercial power source 1 → the choke coil 3 → the second clamp capacitor 9 → the inside of the second semiconductor switch 7 as shown in FIG. 2B. The mode in which the electric power stored in the choke coil 3 is stored in the second clamp capacitor 9 through the diode path and the load 12 → the first resonance capacitor → the first clamp capacitor 8 → the load in the second clamp capacitor 9 path. It operates so as to simultaneously perform the mode of discharging the electric power stored in the inductance component 12 to the resonance capacitor 10. Here, since the second clamp capacitor 9 forms a booster circuit by the choke coil 3 and the diode in the second semiconductor switch 7, the voltage between the polarities in FIG. 2 is substantially constant as indicated by V9 in FIG. It is possible to keep the voltage.
【００３１】第２の半導体スイッチ７内のダイオードが
導通している区間で第２の半導体スイッチ７が導通状態
にしておくと、図２（ｃ）のモードに遷移することにな
る。このモードでは、第１の共振コンデンサ１０→負荷
１２→第２の半導体スイッチ７→第２のクランプコンデ
ンサ→第１のクランプコンデンサの経路で電力を負荷１
２に供給する経路と、商用電源１→チョークコイル３→
第１のクランプコンデンサ８→共振コンデンサ１０→負
荷１２の経路で、電力を負荷に１２供給する経路が同時
に起こり、図４のＩ７に示す電流が第２の半導体スイッ
チ７に流れることになる。If the second semiconductor switch 7 is kept in the conducting state in the section where the diode in the second semiconductor switch 7 is conducting, the mode transitions to the mode shown in FIG. 2 (c). In this mode, electric power is supplied to the load 1 through the path of the first resonance capacitor 10 → the load 12 → the second semiconductor switch 7 → the second clamp capacitor → the first clamp capacitor.
2 supply path, commercial power supply 1 → choke coil 3 →
A path for supplying electric power to the load 12 simultaneously occurs in the path of the first clamp capacitor 8 → the resonance capacitor 10 → the load 12, and the current indicated by I7 in FIG. 4 flows into the second semiconductor switch 7.
【００３２】第１のクランプコンデンサ８の電荷が放出
されると、第１のクランプコンデンサ８に並列接続され
た第１のダイオード４を電流が通る図２の（ｄ）のモー
ドに遷移していく。ここで第１のクランプコンデンサ８
に蓄えられる電荷は、ほとんどないため、（ｄ）の状態
にすぐに遷移すると考えられる。When the electric charge of the first clamp capacitor 8 is discharged, a transition is made to the mode of (d) of FIG. 2 in which a current passes through the first diode 4 connected in parallel to the first clamp capacitor 8. . Here, the first clamp capacitor 8
Since almost no electric charge is stored in, it is considered that the state immediately transits to the state of (d).
【００３３】所定の時間経過後、第２の半導体スイッチ
７をオフすると、図２（ｅ）に示すように、負荷１２→
第１の半導体スイッチ６内のダイオード→第１の共振コ
ンデンサ１０の経路で、負荷１２のインダクタンスに蓄
えられた電力を第１の共振コンデンサに蓄えるモードと
商用電源１→チョークコイル３→第１のダイオード→第
１の共振コンデンサ→負荷１２の経路で負荷１２に電力
を供給するモードを同時に行うことになる。When the second semiconductor switch 7 is turned off after the elapse of a predetermined time, the load 12 →
A mode in which the power stored in the inductance of the load 12 is stored in the first resonance capacitor in the path of the diode in the first semiconductor switch 6 → the first resonance capacitor 10 and the commercial power supply 1 → the choke coil 3 → the first The mode of supplying power to the load 12 through the path of the diode → the first resonance capacitor → the load 12 is simultaneously performed.
【００３４】この第１の半導体スイッチ６内のダイオー
ドが導通状態を維持している間に、第１の半導体スイッ
チ６を導通状態にすることで、図２（ａ）の動作モード
に遷移することになる。この動作を２０〜５０ｋＨｚの
高周波で行うことにより、負荷１２に図４のＩ１２の様
な電流を流し、必要な電力を負荷１２に供給している。By making the first semiconductor switch 6 conductive while the diode in the first semiconductor switch 6 maintains the conductive state, transition to the operation mode of FIG. become. By performing this operation at a high frequency of 20 to 50 kHz, a current such as I12 in FIG. 4 is passed through the load 12 to supply the necessary power to the load 12.
【００３５】図３に電源電圧１の極性が逆の場合の、各
モードでの電流経路を示す。今度は、第２の半導体スイ
ッチ７が昇圧動作とインバータ動作を同時に行うための
主スイッチとして働き、第１の半導体スイッチ６はサブ
スイッチとして働くことになる。この動作により、図５
に示すように第１のクランプコンデンサ８は、ほぼ一定
電圧に保たれることになる。よって、負荷には図５のＶ
１２の様な定電圧に近い電圧が供給され、誘導加熱では
軽量負荷での音の発生の抑制が可能であり、マグネトロ
ン駆動用電源においては、マグネトロン駆動電圧を休止
区間なしで発振させることが可能になる利点が生じる。
ここで、極性に対し、第１の半導体スイッチ６と第２の
半導体スイッチ７が商用電源１の極性に対しシンメトリ
ックに動作することで、半導体スイッチの損失もほぼ同
一になり、冷却構成が簡素化されることになる。また、
使用される素子数も整流ダイオードが２個少なく構成さ
れているため、価格の大きな部分をしめるパワー素子の
使用数を軽減でき安価な電源を実現できることになる。FIG. 3 shows current paths in each mode when the polarity of the power supply voltage 1 is opposite. This time, the second semiconductor switch 7 acts as a main switch for simultaneously performing the boosting operation and the inverter operation, and the first semiconductor switch 6 acts as a sub switch. By this operation, as shown in FIG.
As shown in, the first clamp capacitor 8 is kept at a substantially constant voltage. Therefore, the load is V in FIG.
A voltage close to a constant voltage such as 12 is supplied, and it is possible to suppress the generation of sound under a light load by induction heating, and in the magnetron drive power supply, it is possible to oscillate the magnetron drive voltage without a pause section. There are advantages.
Here, since the first semiconductor switch 6 and the second semiconductor switch 7 operate symmetrically with respect to the polarity with respect to the polarity of the commercial power supply 1, the loss of the semiconductor switch becomes substantially the same, and the cooling configuration is simple. Will be realized. Also,
As for the number of elements used, the number of rectifying diodes is reduced by two, so that the number of power elements used, which occupies a large portion of the price, can be reduced and an inexpensive power source can be realized.
【００３６】なお、第１及び第２のクランプコンデンサ
８、９は負荷１２が誘導加熱負荷やマグネトロン駆動用
電源の場合は、負荷１２への電力供給を完全平滑する必
要がないため、数μＦ〜数十μＦのフィルムコンデンサ
で十分であり、価格的にも安価ですませることが可能で
ある。When the load 12 is an induction heating load or a magnetron driving power source, it is not necessary to completely smooth the power supply to the load 12, so that the first and second clamp capacitors 8 and 9 are in the order of several μF. A film capacitor of several tens of μF is sufficient, and it is possible to reduce the price.
【００３７】また、第１及び第２のクランプコンデンサ
８、９の容量は、極性によりシンメトリックな動作をさ
せるため、同容量であることが望ましい。Further, it is desirable that the capacitances of the first and second clamp capacitors 8 and 9 have the same capacitance in order to perform a symmetric operation depending on the polarities.
【００３８】また、図６に第２の半導体スイッチ７に負
荷１２と第２の共振コンデンサ１１の直列回路が並列に
接続された構成を、図７には第１及び第２の共振コンデ
ンサ１０、１１が第１及び第２の半導体スイッチ６、７
の直列回路に並列に接続され、各々の中点に負荷１２が
接続される構成を示している。基本的な動作は、図１と
同様であるが、図７の構成では共振コンデンサ１０、１
１の容量は共振コンデンサ一個で実現している図１、図
６の構成の１／２になる。Further, FIG. 6 shows a configuration in which a series circuit of a load 12 and a second resonant capacitor 11 is connected in parallel to the second semiconductor switch 7, and FIG. 7 shows the first and second resonant capacitors 10, 11 is the first and second semiconductor switches 6 and 7
Shows a configuration in which the load 12 is connected to the midpoint of each of the series circuits connected in parallel. The basic operation is similar to that of FIG. 1, but in the configuration of FIG.
The capacitance of 1 is 1/2 that of the configuration of FIGS. 1 and 6 realized by one resonance capacitor.
【００３９】以上のように本実施例によれば、負荷１２
に供給する電力を平滑化できかつ入力電流の力率を良く
できるという利点を有したまま、素子責務を等分するこ
とができる構成をとることにより、冷却構成を簡素化で
きる安価な高周波電源を実現できるものである。As described above, according to this embodiment, the load 12
A low-cost high-frequency power supply that can simplify the cooling configuration by adopting a configuration that can equally divide the element responsibilities while having the advantage that the power supplied to the device can be smoothed and the power factor of the input current can be improved. It can be realized.
【００４０】（実施例２）本発明の高周波電源装置の第
２の実施例について図面を参照しながら説明する。本実
施例は請求項５に係わる。(Embodiment 2) A second embodiment of the high frequency power supply device of the present invention will be described with reference to the drawings. This embodiment relates to claim 5.
【００４１】図８は本実施例の回路構成を示す図であ
る。本実施例が実施例１の構成と異なるのは第１のコン
デンサ１５を第１の半導体スイッチ６と並列に配置して
いる点である。FIG. 8 is a diagram showing the circuit configuration of this embodiment. The present embodiment differs from the configuration of the first embodiment in that the first capacitor 15 is arranged in parallel with the first semiconductor switch 6.
【００４２】本構成における動作を説明する。図９に図
２の極性に対応する波形図を示す。基本動作は実施例１
と同様であるが、第１及び第２の半導体スイッチ６、７
がターンオフする際に、第１のコンデンサ１５が充電あ
るいは放電されることにより、第１及び第２の半導体ス
イッチ６、７の電圧の立ち上がりが緩やかに動作するこ
とになる。この動作により図９のＶ６とＩ６あるいはＶ
７とＩ７に示される様に半導体スイッチの電流が０に遷
移する際の電流・電圧積で示されるターンオフ時のスイ
ッチング損失を減らすことができる。特に負荷１２が誘
導加熱負荷やマグネトロン駆動電源の負荷の場合は、電
流ピークが５０Ａ以上になる場合も多く、半導体スイッ
チの電圧の立ち上がりを緩やかにすることで、大幅な損
失低減を実現することが可能となる。このことにより、
冷却構成をより簡素化することが可能となる。The operation of this configuration will be described. FIG. 9 shows a waveform diagram corresponding to the polarities of FIG. The basic operation is the first embodiment
Similar to, but with the first and second semiconductor switches 6, 7
Is turned off, the first capacitor 15 is charged or discharged, so that the rising voltage of the first and second semiconductor switches 6 and 7 operates gently. By this operation, V6 and I6 in FIG. 9 or V
As shown in 7 and I7, it is possible to reduce the switching loss at turn-off, which is represented by the product of current and voltage when the current of the semiconductor switch transits to 0. In particular, when the load 12 is an induction heating load or a magnetron drive power source load, the current peak is often 50 A or more, and by gradually increasing the voltage rise of the semiconductor switch, it is possible to realize a significant loss reduction. It will be possible. By this,
It is possible to further simplify the cooling structure.
【００４３】また、図１０に第２の半導体スイッチ７と
並列に第２のコンデンサ１６を接続した例を、図１１に
第１及び第２の半導体スイッチ６、７にそれぞれコンデ
ンサを並列に接続した例を示している。効果はどの接続
でも同様な効果があるが、図１１のコンデンサの容量
は、図８及び図９に示す様に一個で実現した場合の容量
の１／２の容量になる。Further, FIG. 10 shows an example in which the second capacitor 16 is connected in parallel with the second semiconductor switch 7, and FIG. 11 shows capacitors connected in parallel with the first and second semiconductor switches 6 and 7, respectively. An example is shown. Although the same effect can be obtained with any connection, the capacitance of the capacitor shown in FIG. 11 is half the capacitance of one capacitor as shown in FIGS. 8 and 9.
【００４４】以上のように本実施例によれば、第１また
は第２の半導体スイッチ６、７に第１または第２のコン
デンサ１５、１６を接続することにより、半導体スイッ
チのターンオフ時の損失を大幅に減少させることで、冷
却構成の簡素化を図り、安価な高周波電源を実現できる
ものである。As described above, according to this embodiment, by connecting the first or second capacitors 15 and 16 to the first or second semiconductor switches 6 and 7, the loss when the semiconductor switch is turned off is reduced. By significantly reducing it, the cooling structure can be simplified and an inexpensive high frequency power supply can be realized.
【００４５】（実施例３）本発明の第３の実施例につい
て図面を参照しながら説明する。本実施例は請求項６に
係わる。(Embodiment 3) A third embodiment of the present invention will be described with reference to the drawings. This embodiment relates to claim 6.
【００４６】本実施例の構成を図１２に示す。本実施例
が実施例１と異なるのは、商用電源１の電圧値を検知す
る電圧検出手段１７を有している点である。The structure of this embodiment is shown in FIG. The present embodiment is different from the first embodiment in that it has a voltage detection means 17 for detecting the voltage value of the commercial power supply 1.
【００４７】上記構成における動作について説明する。
図１３に本実施例での動作についての動作図を示す。電
圧検出手段１７により商用電源１の電圧値、０電圧タイ
ミング、周波数等を検知して、その検出値に従い制御手
段１４により第１及び第２の半導体スイッチ６、７に供
給するオン時間を決定する。ここで、電源電圧のピーク
付近でオン時間を短く、谷間付近に向かってオン時間を
長く設定することで、第１及び第２のクランプコンデン
サ８、９の電圧を一定値に近づけることが出来ると共に
入力電流を正弦波に近づけることが可能なる。ここで、
商用電源の極性により、第１及び第２の半導体スイッチ
６、７の主スイッチが変わるため、オン時間幅を極性に
より切り替える必要がある。また、制御手段１４は、電
圧検出手段１７から０電圧タイミングと周波数の情報を
受け取ることができれば、あらかじめ設定されたオン時
間により、入力電力を規定することができる。そこで、
電圧検出手段１７はフォトカプラやトランスによる構成
を取ることが可能である。The operation of the above configuration will be described.
FIG. 13 shows an operation diagram of the operation of this embodiment. The voltage detecting means 17 detects the voltage value, the 0 voltage timing, the frequency, etc. of the commercial power supply 1, and the control means 14 determines the ON time to be supplied to the first and second semiconductor switches 6 and 7 according to the detected values. . Here, by setting the ON time short near the peak of the power supply voltage and lengthening the ON time toward the valley, the voltages of the first and second clamp capacitors 8 and 9 can be brought close to a constant value. It is possible to bring the input current closer to a sine wave. here,
Since the main switches of the first and second semiconductor switches 6 and 7 change depending on the polarity of the commercial power source, it is necessary to switch the ON time width depending on the polarity. Further, if the control means 14 can receive the information of the 0 voltage timing and the frequency from the voltage detection means 17, the input power can be defined by the preset ON time. Therefore,
The voltage detection means 17 can be configured by a photo coupler or a transformer.
【００４８】以上のように本実施例によれば、前記第
１、第２の半導体スイッチ６、７の導通時間を商用電源
電圧の谷間付近でのスイッチング周波数をピーク付近よ
りも低く設定することにより、商用電源１の電圧の谷間
付近でもより電流を流すことができるようになり、高調
波成分の少ない入力電流で動作できる高周波電源装置を
実現できるものである。As described above, according to this embodiment, the conduction time of the first and second semiconductor switches 6 and 7 is set so that the switching frequency near the valley of the commercial power supply voltage is lower than near the peak. The current can be made to flow more even near the valley of the voltage of the commercial power supply 1, and the high frequency power supply device which can operate with the input current having few harmonic components can be realized.
【００４９】（実施例４）本発明の第４の実施例につい
て図面を参照しながら説明する。本実施例は請求項７に
係わる。(Embodiment 4) A fourth embodiment of the present invention will be described with reference to the drawings. This embodiment relates to claim 7.
【００５０】本実施例の構成は実施例３と同一の構成を
とるため省略する。The configuration of the present embodiment is the same as that of the third embodiment, and will be omitted.
【００５１】本実施例の動作について説明する。図１４
は本実施例の動作を示す動作図である。本実施例が実施
例３と異なるのは、電圧検出手段１７により商用電源１
の電圧値、０電圧タイミング、周波数等を検知して、そ
の検出値に従い制御手段１４により第１及び第２の半導
体スイッチ６、７に供給するオン時間と駆動周波数を決
定している点である。つまり、電源電圧のピーク付近で
オン時間を短くかつ周波数を高く設定し、谷間付近に向
かってオン時間を長く、周波数を低く設定することで、
第１及び第２のクランプコンデンサ８、９の電圧をより
一定値に近づけることが出来ると共に入力電流をより正
弦波に近づけることが可能なる。The operation of this embodiment will be described. 14
FIG. 6 is an operation diagram showing the operation of this embodiment. This embodiment is different from the third embodiment in that the commercial power source 1
Is detected, and the control means 14 determines the ON time and the drive frequency to be supplied to the first and second semiconductor switches 6 and 7 according to the detected values. . In other words, by setting the on-time short and the frequency high near the peak of the power supply voltage, lengthening the on-time toward the valley and setting the frequency low,
The voltages of the first and second clamp capacitors 8 and 9 can be made closer to a constant value, and the input current can be made closer to a sine wave.
【００５２】以上の様に本実施例によれば、第１、第２
の半導体スイッチ６、７の導通時間を商用電源１の電圧
の谷間付近でのスイッチング周波数をピーク付近よりも
低く設定することで、商用電源１の電圧の谷間付近で、
より電流を流すことができるようになり、高調波成分の
少ない入力電流で動作できる高周波電源装置を実現でき
るものである。As described above, according to this embodiment, the first and second
By setting the conduction time of the semiconductor switches 6 and 7 in the vicinity of the valley of the voltage of the commercial power supply 1 to be lower than that near the peak,
As a result, more current can be passed, and a high frequency power supply device that can operate with an input current with few harmonic components can be realized.
【００５３】（実施例５）本発明の第５の実施例につい
て図面を参照しながら説明する。本実施例は請求項８に
係わる。(Embodiment 5) A fifth embodiment of the present invention will be described with reference to the drawings. This embodiment relates to claim 8.
【００５４】本実施例の構成は実施例３と同一な構成を
とるため省略する。The configuration of the present embodiment is the same as that of the third embodiment, and will be omitted.
【００５５】本実施例の動作について説明する。図１５
は本実施例の動作を示す動作図である。本実施例が実施
例３と異なるのは、電圧検知手段１７により商用電源１
の電圧値を検知して、その検出値に従い制御手段１４に
より、第１及び第２の半導体スイッチ６、７に供給する
互いのオン信号の休止区間の重なり（デットタイム）を
可変にしている点である。第１のコンデンサ１５は、第
１の半導体スイッチ６がオフした際に電荷を蓄えること
で第１の半導体スイッチ６がオフした際の電圧上昇を緩
やかにする働きをし、第２の半導体スイッチ７がオフし
た際に電荷を放出する動作を行うことで第２の半導体ス
イッチ７の電圧上昇を緩やかにする働きをもつことにな
る。ここで、商用電源１の電圧の谷間付近では電圧のピ
ーク付近に比べ、第１のコンデンサ１５の電荷が抜ける
までに時間を要することになる。この電荷を放出する前
に第１の半導体スイッチ６がオン状態になると、第１の
コンデンサ１の容量を短絡することになり、第１の半導
体スイッチ６は電圧を残したまま、大電流が流れるため
ターンオン損失が発生することになる。この損失を考慮
して冷却設計を行うと、その損失分冷却性能を上げてお
く必要が生じることになる。また、スパイク状の電流が
流れるため、大きなノイズ源となることも避けられな
い。そこで、商用電源１の電圧に応じて、デットタイム
を可変させることによりこの短絡モードの発生を防ぐこ
とが可能になる。本実施例では、図１５に示す様に、電
圧ピーク付近ではデットタイムを狭く、電圧の谷間付近
ではデットタイムを長くとることにより短絡モードの発
生を予防している。The operation of this embodiment will be described. Figure 15
FIG. 6 is an operation diagram showing the operation of this embodiment. The present embodiment is different from the third embodiment in that the commercial power source 1
Of the ON signal supplied to the first and second semiconductor switches 6 and 7 is made variable by the control means 14 according to the detected voltage value. Is. The first capacitor 15 acts to moderate the voltage rise when the first semiconductor switch 6 is turned off by storing electric charges when the first semiconductor switch 6 is turned off, and the second semiconductor switch 7 By performing the operation of discharging the electric charge when is turned off, it has a function to moderate the voltage rise of the second semiconductor switch 7. Here, in the vicinity of the valley of the voltage of the commercial power source 1, it takes more time than in the vicinity of the peak of the voltage until the charge of the first capacitor 15 is discharged. If the first semiconductor switch 6 is turned on before discharging this electric charge, the capacitance of the first capacitor 1 is short-circuited, and a large current flows while the first semiconductor switch 6 remains a voltage. Therefore, turn-on loss will occur. If the cooling design is performed in consideration of this loss, it becomes necessary to improve the cooling performance by the loss. Moreover, since a spike-shaped current flows, it is unavoidable that it becomes a large noise source. Therefore, by varying the dead time according to the voltage of the commercial power source 1, it is possible to prevent the occurrence of this short circuit mode. In this embodiment, as shown in FIG. 15, the dead time is narrowed near the voltage peak, and the dead time is lengthened near the valley of the voltage to prevent the occurrence of the short circuit mode.
【００５６】また、入力電力が変わった場合も同様な現
象が生じるため、入力電力が大きいときはデットタイム
を短く、入力電力が小さいときはデットタイムを狭く取
ることが望ましい。Since the same phenomenon occurs when the input power changes, it is desirable to set the dead time short when the input power is large and narrow the dead time when the input power is small.
【００５７】以上の様に本実施例では、第１と第２の半
導体スイッチ６、７の非導通時間の重なりを、商用電源
電圧のピーク付近では短く、谷間付近では長く設定する
ことにより、谷間付近での半導体スイッチの短絡モード
発生による損失を低減でき、冷却構成の簡易化及び低ノ
イズの高周波電源を実現できるものである。As described above, in the present embodiment, the non-conducting time of the first and second semiconductor switches 6 and 7 is set to be short near the peak of the commercial power supply voltage and long near the valley, so that the valley is set longer. The loss due to the occurrence of the short-circuit mode of the semiconductor switch in the vicinity can be reduced, the cooling structure can be simplified, and a low-noise high-frequency power source can be realized.
【００５８】（実施例６）本発明の第６の実施例につい
て図面を参照しながら説明する。本実施例は請求項９に
係わる。(Embodiment 6) A sixth embodiment of the present invention will be described with reference to the drawings. This embodiment relates to claim 9.
【００５９】本実施例の構成を図１６に示す。本実施例
が実施例３の構成と異なるのは、チョークコイルの電流
を検出する電流検出手段１８を備えている点である。The structure of this embodiment is shown in FIG. The present embodiment differs from the configuration of the third embodiment in that a current detecting means 18 for detecting the current of the choke coil is provided.
【００６０】本実施例の動作について説明する。制御手
段１４は、電圧検出手段１７の検出値に従い、チョーク
コイル３の電流を検出する電流検出手段１８の出力が所
望の電流になるように第１及び第２の半導体スイッチ
６、７のオン時間を決めることになる。ここで特に、チ
ョークコイル３の電流を検出しているのは、貫通型電流
センサの使用などが簡易にできるため、あるいは電流セ
ンサとチョークコイルの一体構成が可能などの利点を含
むことが上げられる。また、制御手段１４は電圧検知手
段１７の出力と電流検出手段１８の出力を一致させる様
に動作することになる。この動作により、入力電流を正
弦波に近づけることが可能になり、力率が良く、高調波
成分の少ない高周波電源を実現することが可能になる。The operation of this embodiment will be described. The control unit 14 turns on the first and second semiconductor switches 6 and 7 according to the detection value of the voltage detection unit 17 so that the output of the current detection unit 18 that detects the current of the choke coil 3 becomes a desired current. Will be decided. Here, in particular, the fact that the current of the choke coil 3 is detected may include any advantage that a through-type current sensor can be easily used, or that the current sensor and the choke coil can be integrally configured. . Further, the control means 14 operates so that the output of the voltage detection means 17 and the output of the current detection means 18 coincide with each other. By this operation, it becomes possible to make the input current close to a sine wave, and it is possible to realize a high frequency power supply with a high power factor and a small number of harmonic components.
【００６１】以上の様に本実施例では、チョークコイル
３と直列に電流検出手段１８を設け、制御手段１４がチ
ョークコイル３の電流が正弦波になるように制御するこ
とにより、簡易な構成で、力率が良く、高調波成分の少
ない電流を供給できる高周波電源を実現できるものであ
る。As described above, in the present embodiment, the current detecting means 18 is provided in series with the choke coil 3 and the control means 14 controls the current of the choke coil 3 to be a sine wave, so that the construction is simple. It is possible to realize a high frequency power supply that has a high power factor and can supply a current with few harmonic components.
【００６２】（実施例７）本発明の第７の実施例につい
て図面を参照しながら説明する。本実施例は請求項１０
に係わる。(Embodiment 7) A seventh embodiment of the present invention will be described with reference to the drawings. This embodiment provides claim 10.
Involved in
【００６３】本実施例の構成を図１７に示す。本実施例
が実施例６の構成と異なるのは制御手段１４の内部に、
電圧検出手段１７の検出値に従い、電流検出手段１８の
検出値の目標値を決める目標信号設定手段３０と、目標
信号の上限値を決める目標上限設定手段３１と、目標信
号の下限値を決める目標下限設定手段３２と、電流検出
手段１７の検出値が、目標の下限または上限からはずれ
ることを検出する第１の比較手段３３及び第２の比較手
段３４と、第１及び第２の比較手段３３、３４の出力に
従い第１及び第２の半導体スイッチ６、７のオン信号を
発生する制御信号発生手段３５を構成してることであ
る。The structure of this embodiment is shown in FIG. The present embodiment is different from the structure of the sixth embodiment in the inside of the control means 14.
According to the detection value of the voltage detection means 17, a target signal setting means 30 that determines the target value of the detection value of the current detection means 18, a target upper limit setting means 31 that determines the upper limit value of the target signal, and a target that determines the lower limit value of the target signal. The lower limit setting means 32, the first comparing means 33 and the second comparing means 34 for detecting that the detected value of the current detecting means 17 deviates from the target lower limit or the upper limit, and the first and second comparing means 33. , 34 to constitute the control signal generating means 35 for generating the ON signals of the first and second semiconductor switches 6 and 7.
【００６４】本実施例の動作について説明する。図１
８、図１９は本実施例の動作を示す動作図である。チョ
ークコイル３に流れる電流はチョークコイル３のインダ
クタンス値と商用電源１の電圧値で決まる傾きを持って
上昇・下降することになる。商用電源１の極性により第
１、第２半導体スイッチ６、７の一方が主側のスイッチ
として働き、もう一方が従側のスイッチとして働くこと
になる。図１８が、図２の場合と同極性になった場合の
振る舞いであり、図１９は図３と同極性になった場合の
振る舞いである。極性に応じて第１、第２の半導体スイ
ッチ６、７の内、主側のスイッチがオン状態になると電
流値は増加し、主スイッチがオフするつまり従側スイッ
チがオン状態になると電流値は減少することになる。そ
こで、制御手段１４内に電流値の目標信号に目標信号上
限と目標値下限を持たせ、電流値が目標値の下限を下回
った場合に主側の半導体スイッチをオン状態にし、目標
値の上限を越えた段階で主側の半導体スイッチをオフ状
態にする制御を行うこととする。このように、目標電流
値に上限、下限を設けるという簡易な構成で正弦波に近
い入力電流を実現できることになる。ここで、目標上限
設定手段３１の値と目標下限設定手段３２の値の幅は、
第１及び第２の半導体スイッチ６、７の駆動周波数が２
０ｋＨｚ〜５０ｋＨｚで収まる範囲になる幅に設定する
ことが望ましい。The operation of this embodiment will be described. Figure 1
8 and 19 are operation diagrams showing the operation of this embodiment. The current flowing through the choke coil 3 rises and falls with a gradient determined by the inductance value of the choke coil 3 and the voltage value of the commercial power supply 1. Depending on the polarity of the commercial power source 1, one of the first and second semiconductor switches 6 and 7 works as a master side switch and the other works as a slave side switch. FIG. 18 shows the behavior when the polarity is the same as that of FIG. 2, and FIG. 19 is the behavior when the polarity is the same as that of FIG. Depending on the polarity, the current value increases when the main switch of the first and second semiconductor switches 6 and 7 is turned on, and the current value increases when the main switch is turned off, that is, when the slave switch is turned on. Will decrease. Therefore, the target signal of the current value has a target signal upper limit and a target value lower limit in the control means 14, and when the current value falls below the lower limit of the target value, the semiconductor switch on the main side is turned on to set the upper limit of the target value. It is assumed that the control for turning off the semiconductor switch on the main side is performed when the temperature exceeds the limit. In this way, an input current close to a sine wave can be realized with a simple configuration in which the target current value has upper and lower limits. Here, the range of the value of the target upper limit setting means 31 and the value of the target lower limit setting means 32 is
The drive frequency of the first and second semiconductor switches 6 and 7 is 2
It is desirable to set the width so that it falls within the range of 0 kHz to 50 kHz.
【００６５】以上の様に本実施例においては、電流検出
手段１８の出力と比較する目標信号に上限値と下限値を
設け、電流検出手段１８の値が上限値と下限値の間に収
まるように、第１、第２の半導体スイッチ６、７の導通
時間を決める方式とすることにより、簡易な回路構成で
入力電流を正弦波に近づけることが可能となり、力率が
良く高調波成分の少ない電流を供給できる高周波電源を
実現できるものである。As described above, in this embodiment, the target signal to be compared with the output of the current detecting means 18 is provided with the upper limit value and the lower limit value so that the value of the current detecting means 18 falls between the upper limit value and the lower limit value. In addition, by adopting a method of determining the conduction time of the first and second semiconductor switches 6 and 7, it becomes possible to bring the input current close to a sine wave with a simple circuit configuration, and the power factor is good and the harmonic components are small. It is possible to realize a high frequency power supply that can supply current.
【００６６】（実施例８）本発明の第８の実施例につい
て図面を参照しながら説明する。本実施例は請求項１１
に係わる。(Embodiment 8) An eighth embodiment of the present invention will be described with reference to the drawings. This embodiment is claim 11.
Involved in
【００６７】本実施例の構成を図２０に示す。本実施例
が実施例７と異なる構成は、第１及び第２の半導体スイ
ッチ６、７のオン時間に上限を設けるオン時間上限設定
手段３６と駆動周波数の下限値を設定する周波数下限設
定手段３７を備えている点である。The structure of this embodiment is shown in FIG. The present embodiment differs from the seventh embodiment in that the on-time upper limit setting means 36 for setting an upper limit to the on-time of the first and second semiconductor switches 6 and 7 and the frequency lower limit setting means 37 for setting the lower limit value of the driving frequency are used. It is a point equipped with.
【００６８】本実施例の動作について説明する。図２１
は本実施例の動作を示す動作図である。チョークコイル
３に流れる電流は、チョークコイル３のインダクタンス
値と商用電源１の電圧値に依存することになる。そこ
で、商用電源１の電圧値により、傾きがかわるため、電
圧のピーク付近と谷間付近では大きく傾きが異なること
になる。よって、谷間付近では、オン時間が長くなり駆
動周波数が２０ｋＨｚ以下になる場合が生じる。一方、
駆動周波数を上げすぎると、ピーク付近での周波数が上
がりすぎるため第１、第２の半導体スイッチ６、７のス
イッチング損失が大きくなり、冷却構成が複雑になる。
そこで、オン時間及び駆動周波数に制限を設けること
で、駆動周波数を上げずにしかも、可聴域まで周波数が
下がることなく、動作を行わせることが可能になる。ま
た、オン時間が制限値にかかる区間は１ｍｓｅｃ以下の
短い区間であるため、力率などに大きな影響を与えるこ
とはない。The operation of this embodiment will be described. Figure 21
FIG. 6 is an operation diagram showing the operation of this embodiment. The current flowing through the choke coil 3 depends on the inductance value of the choke coil 3 and the voltage value of the commercial power supply 1. Therefore, since the slope changes depending on the voltage value of the commercial power supply 1, the slope is greatly different near the peak of the voltage and near the valley. Therefore, in the vicinity of the valley, the on-time becomes long and the drive frequency may become 20 kHz or less. on the other hand,
If the driving frequency is raised too much, the frequency near the peak rises too much, and the switching loss of the first and second semiconductor switches 6 and 7 becomes large, and the cooling structure becomes complicated.
Therefore, by limiting the on-time and the drive frequency, it becomes possible to perform the operation without raising the drive frequency and without lowering the frequency to the audible range. Further, since the section in which the on-time takes the limit value is a short section of 1 msec or less, the power factor is not greatly affected.
【００６９】以上より本実施例においては、第１、第２
の半導体スイッチ６、７の導通時間に上限及び駆動周波
数下限を設けることにより、駆動周波数が可聴域まで下
がることを防止することができ、力率が良く高調波成分
の少ない電流を供給できる高周波電源を実現できるもの
である。As described above, in the present embodiment, the first and second
By providing the upper limit and the lower limit of the drive frequency for the conduction time of the semiconductor switches 6 and 7, it is possible to prevent the drive frequency from dropping to the audible range, and to supply a current with good power factor and few harmonic components. Can be realized.
【００７０】（実施例９）本発明の第９の実施例につい
て図面を参照しながら説明する。本実施例は請求項１２
に係わる。(Embodiment 9) A ninth embodiment of the present invention will be described with reference to the drawings. This embodiment is claim 12.
Involved in
【００７１】本実施例の構成を図２２に示す。本実施例
が実施例３と異なる点は、第１または第２のクランプコ
ンデンサ８、９の両端電圧を検知するための第１の電圧
検知手段３８を有している点である。The structure of this embodiment is shown in FIG. This embodiment is different from the third embodiment in that it has a first voltage detecting means 38 for detecting the voltage across the first or second clamp capacitors 8 and 9.
【００７２】本実施例の動作について説明する。図２２
は本実施例の動作を示す動作図である。制御手段１４
は、所定の出力が得られるよう第１、第２の半導体スイ
ッチ６、７のオン時間を決定する。この際、出力電力に
従い第１、第２のクランプコンデンサ８、９の両端電圧
は変化することになる。そこで、制御手段１４は第１の
電圧検出手段３８によりクランプコンデンサの両端電圧
を検出値し、この電圧値が所定値になる様に制御する方
式をとる。この方式では、電流センサなどが必要ないた
め、より安価な構成で電力制御が可能になる。ここで、
第１の電圧検出手段３８はピークホールド回路等で構成
されることが望ましい。The operation of this embodiment will be described. FIG. 22
FIG. 6 is an operation diagram showing the operation of this embodiment. Control means 14
Determines the ON time of the first and second semiconductor switches 6 and 7 so that a predetermined output can be obtained. At this time, the voltages across the first and second clamp capacitors 8 and 9 change according to the output power. Therefore, the control means 14 adopts a method of detecting the voltage across the clamp capacitor by the first voltage detection means 38 and controlling so that this voltage value becomes a predetermined value. This method does not require a current sensor or the like, and thus enables power control with a cheaper configuration. here,
It is desirable that the first voltage detecting means 38 be composed of a peak hold circuit or the like.
【００７３】以上より本実施例によれば、第１または第
２のクランプコンデンサ８、９に第１の電圧検出手段３
８を設け、第１の電圧検出手段３８の電圧値が所定値に
なるように第１及び第２の半導体スイッチ６、７の導通
時間を設定することにより、簡易で安価な構成で入力電
力の設定が可能になり、安価な高周波電源装置を実現で
きるものである。As described above, according to this embodiment, the first voltage detecting means 3 is provided in the first or second clamp capacitors 8 and 9.
8 is provided and the conduction time of the first and second semiconductor switches 6 and 7 is set so that the voltage value of the first voltage detection means 38 becomes a predetermined value, so that the input power of the input power can be reduced with a simple and inexpensive structure. The setting can be performed, and an inexpensive high frequency power supply device can be realized.
【００７４】（実施例１０）本発明の第１０の実施例に
ついて図面を参照しながら説明する。本実施例は請求項
１３に係わる。(Embodiment 10) A tenth embodiment of the present invention will be described with reference to the drawings. This embodiment relates to claim 13.
【００７５】本実施例の構成を図２４に示す。本実施例
が従来例３の構成と異なるのは、第１のクランプコンデ
ンサ８の両端電圧を検出する第１の電圧検知手段３８
と、第２のクランプコンデンサ９の両端電圧を検出する
第２の電圧検知手段３９を有する点である。The structure of this embodiment is shown in FIG. The present embodiment is different from the configuration of the conventional example 3 in that the first voltage detecting means 38 for detecting the voltage across the first clamp capacitor 8 is used.
And a second voltage detecting means 39 for detecting the voltage across the second clamp capacitor 9.
【００７６】本実施例の動作について説明する。図２５
は本実施例の動作を示す動作図である。２０ｋＨｚから
５０ｋＨｚ程度の間でで発振する三角波信号と、商用電
源１の電圧に同期して決まるリファレンス信号により、
ＰＷＭ信号を生成する。制御手段１４は、ＰＷＭ信号と
しては図示している信号とその信号に相反するＰＷＭ信
号の２種類を生成し、それぞれの信号からできる信号を
第１及び第２の半導体スイッチ６、７のオン信号として
入力する。このリファレンス信号は電圧周期に対して、
対称な波形を用いることで入力電流が直流成分を持たな
いような設定されることになる。しかしながら、回路定
数のずれの蓄積などによりわずかな直流分が検出される
ことになる。この現象は偶数時の高調波電流として検出
されることになる。ここで、第１の電圧検知手段３８と
第２の電圧検知手段３９により、第１、第２のクランプ
コンデンサ８、９の両端電圧を検出し、その電圧値を同
じにすることで、上記現象を防止することが可能にな
る。電圧値を等しくする方法としては、ＰＷＭ信号また
はリファレンス信号の平均値を上昇または下降させるこ
とで達成することが可能である。The operation of this embodiment will be described. Figure 25
FIG. 6 is an operation diagram showing the operation of this embodiment. With a triangular wave signal that oscillates between about 20 kHz and 50 kHz and a reference signal that is determined in synchronization with the voltage of the commercial power supply 1,
Generate a PWM signal. The control means 14 generates two types of PWM signals, that is, a signal shown in the figure and a PWM signal that is a reciprocal to the signal, and the signals generated from the respective signals are ON signals for the first and second semiconductor switches 6 and 7. Enter as. This reference signal is
By using a symmetrical waveform, the input current is set so as to have no DC component. However, a slight amount of direct current will be detected due to the accumulation of deviations in circuit constants. This phenomenon will be detected as an even harmonic current. Here, the first voltage detecting means 38 and the second voltage detecting means 39 detect the voltages across the first and second clamp capacitors 8 and 9 and make the voltage values the same, thereby making the above phenomenon occur. Can be prevented. A method of making the voltage values equal can be achieved by raising or lowering the average value of the PWM signal or the reference signal.
【００７７】以上より本実施例によれば、第１及び第２
の電圧検出手段３８、３９の電圧値が同じになるように
前記第１及び第２の半導体スイッチの６、７の導通時間
を設定することにより、入力電流の直流成分流出を防ぐ
ことが可能になり、偶数次の高調波の成分の少ない高周
波電源装置を実現できるものである。As described above, according to this embodiment, the first and second
By setting the conduction time of 6 and 7 of the first and second semiconductor switches so that the voltage values of the voltage detection means 38 and 39 are the same, it is possible to prevent the direct current component of the input current from flowing out. Therefore, it is possible to realize a high-frequency power supply device having a small number of even-order harmonic components.
【００７８】（実施例１１）本発明の第１１の実施例に
ついて図面を参照しながら説明する。本実施例は請求項
１４に係わる。(Embodiment 11) An eleventh embodiment of the present invention will be described with reference to the drawings. This embodiment relates to claim 14.
【００７９】本実施例の構成を図２６に示す。本実施例
の構成が実施例３と異なるのは入力電流を検出する入力
電流検値手段を有している点である。The configuration of this embodiment is shown in FIG. The configuration of this embodiment is different from that of the third embodiment in that it has an input current detecting means for detecting an input current.
【００８０】本実施例の動作について説明する。本実施
例の動作は実施例１０とほぼ同一である。実施例１０と
異なるのは、入力電流を検出する入力電流検出手段４０
により電流値を検出し、その検出値を用いて直流分を検
出し、制御手段１４により図２５と同様に三角波信号ま
たはリファレンス信号の平均値を上下させる点である。
直流分の検出方法としては入力電流を積分しその値の０
からのずれにより判断することが可能である。The operation of this embodiment will be described. The operation of this embodiment is almost the same as that of the tenth embodiment. The difference from the tenth embodiment is that the input current detecting means 40 for detecting the input current is used.
Is to detect the current value, to detect the direct current component using the detected value, and to raise or lower the average value of the triangular wave signal or the reference signal by the control means 14 as in the case of FIG.
As a method of detecting the direct current component, the input current is integrated and the value is 0
It is possible to judge by the deviation from.
【００８１】以上より本実施例によれば、商用電源１の
入力に入力電流検知手段４０を設け、検出値の積分値が
零になるように、第１及び第２の半導体スイッチ６、７
の導通時間を設定することにより、入力電流の直流成分
流出を防ぐことが可能になり、偶数次の高調波の成分の
少ない高周波電源装置を実現できるものである。As described above, according to this embodiment, the input current detecting means 40 is provided at the input of the commercial power source 1, and the first and second semiconductor switches 6 and 7 are arranged so that the integrated value of the detected values becomes zero.
By setting the conduction time of, it becomes possible to prevent the direct current component of the input current from flowing out, and it is possible to realize a high frequency power supply device with a small number of even harmonic components.
【００８２】[0082]
【発明の効果】以上のように、請求項１〜４に記載の発
明によれば、負荷に供給する電力を平滑化できかつ入力
電流の力率を良くできるという利点を有したまま、半導
体スイッチ責務を等分して、冷却構成を簡素化できる安
価な高周波電源装置を実現できるものである。As described above, according to the first to fourth aspects of the invention, the semiconductor switch has the advantages that the power supplied to the load can be smoothed and the power factor of the input current can be improved. It is possible to realize an inexpensive high-frequency power supply device capable of simplifying the cooling structure by dividing the responsibilities.
【００８３】また、請求項５に記載の発明によれば、半
導体スイッチのターンオフ時の損失を大幅に減少させる
ことで、冷却構成の簡素化を図り、安価な高周波電源を
実現できるものである。According to the fifth aspect of the present invention, by significantly reducing the loss when the semiconductor switch is turned off, the cooling structure can be simplified and an inexpensive high frequency power source can be realized.
【００８４】また、請求項６に記載の発明によれば、商
用電源１の電圧の谷間付近でもより電流を流すことがで
きるようになり、高調波成分の少ない入力電流で動作で
きる高周波電源装置を実現できるものである。Further, according to the invention described in claim 6, it becomes possible to flow more current near the valley of the voltage of the commercial power source 1, and a high frequency power supply device which can operate with an input current with few harmonic components is provided. It can be realized.
【００８５】また、請求項７に記載の発明によれば、商
用電源１の電圧の谷間付近で、より電流を流すことがで
きるようになり、高調波成分の少ない入力電流で動作で
きる高周波電源装置を実現できるものである。Further, according to the invention described in claim 7, it becomes possible to flow more current in the vicinity of the valley of the voltage of the commercial power supply 1, and the high frequency power supply device which can operate with the input current having few harmonic components. Can be realized.
【００８６】また、請求項８に記載の発明によれば、谷
間付近での半導体スイッチの短絡モード発生による損失
を低減でき、冷却構成の簡易化及び低ノイズの高周波電
源を実現できるものである。According to the eighth aspect of the invention, the loss due to the occurrence of the short-circuit mode of the semiconductor switch near the valley can be reduced, the cooling structure can be simplified, and the high-frequency power source with low noise can be realized.
【００８７】また、請求項９に記載の発明によれば、簡
易な構成で、力率が良く、高調波成分の少ない電流を供
給できる高周波電源を実現できるものである。According to the ninth aspect of the present invention, it is possible to realize a high-frequency power source having a simple structure and capable of supplying a current having a high power factor and a small number of harmonic components.
【００８８】また、請求項１０に記載の発明によれば、
簡易な回路構成で入力電流を正弦波に近づけることが可
能となり、力率が良く高調波成分の少ない電流を供給で
きる高周波電源を実現できるものである。According to the invention described in claim 10,
With a simple circuit configuration, the input current can be approximated to a sine wave, and a high-frequency power source that can supply a current with a good power factor and few harmonic components can be realized.
【００８９】また、請求項１１に記載の発明によれば、
駆動周波数が可聴域まで下がることを防止することがで
き、力率が良く高調波成分の少ない電流を供給できる高
周波電源を実現できるものである。According to the invention described in claim 11,
It is possible to realize a high-frequency power source that can prevent the drive frequency from dropping to the audible range and that can supply a current with a high power factor and a small number of harmonic components.
【００９０】また、請求項１２に記載の発明によれば、
簡易で安価な構成で入力電力の設定が可能になり、安価
な高周波電源装置を実現できるものである。According to the invention described in claim 12,
The input power can be set with a simple and inexpensive structure, and an inexpensive high frequency power supply device can be realized.
【００９１】また、請求項１３に記載の発明によれば、
入力電流の直流成分流出を防ぐことが可能になり、偶数
次の高調波の成分の少ない高周波電源装置を実現できる
ものである。According to the invention described in claim 13,
It is possible to prevent the direct current component of the input current from flowing out, and it is possible to realize a high-frequency power supply device with a small number of even harmonic components.
【００９２】また、請求項１４に記載の発明によれば、
入力電流の直流成分流出を防ぐことが可能になり、偶数
次の高調波の成分の少ない高周波電源装置を実現できる
ものである。According to the invention described in claim 14,
It is possible to prevent the direct current component of the input current from flowing out, and it is possible to realize a high-frequency power supply device with a small number of even harmonic components.
【図１】本発明の第１の実施例の高周波電源装置の回路
構成を示す図FIG. 1 is a diagram showing a circuit configuration of a high frequency power supply device according to a first embodiment of the present invention.
【図２】本発明の第１の実施例の高周波電源装置の動作
モードを示す図FIG. 2 is a diagram showing an operation mode of the high frequency power supply device according to the first embodiment of the present invention.
【図３】本発明の第１の実施例の高周波電源装置の動作
モードを示す図FIG. 3 is a diagram showing an operation mode of the high frequency power supply device according to the first embodiment of the present invention.
【図４】本発明の第１の実施例の高周波電源装置の波形
を示す図FIG. 4 is a diagram showing waveforms of the high frequency power supply device according to the first embodiment of the present invention.
【図５】本発明の第１の実施例の高周波電源装置の波形
を示す図FIG. 5 is a diagram showing waveforms of the high frequency power supply device according to the first embodiment of the present invention.
【図６】本発明の第１の実施例の高周波電源装置の回路
構成を示す図FIG. 6 is a diagram showing a circuit configuration of a high frequency power supply device according to a first embodiment of the present invention.
【図７】本発明の第１の実施例の高周波電源装置の回路
構成を示す図FIG. 7 is a diagram showing a circuit configuration of a high frequency power supply device according to a first embodiment of the present invention.
【図８】本発明の第２の実施例の高周波電源装置の回路
構成を示す図FIG. 8 is a diagram showing a circuit configuration of a high frequency power supply device according to a second embodiment of the present invention.
【図９】本発明の第２の実施例の高周波電源装置の波形
を示す図FIG. 9 is a diagram showing waveforms of the high frequency power supply device according to the second embodiment of the present invention.
【図１０】本発明の第２の実施例の高周波電源装置の回
路構成を示す図FIG. 10 is a diagram showing a circuit configuration of a high frequency power supply device according to a second embodiment of the present invention.
【図１１】本発明の第２の実施例の高周波電源装置の回
路構成を示す図FIG. 11 is a diagram showing a circuit configuration of a high frequency power supply device according to a second embodiment of the present invention.
【図１２】本発明の第３の実施例の高周波電源装置の回
路構成を示す図FIG. 12 is a diagram showing a circuit configuration of a high frequency power supply device according to a third embodiment of the present invention.
【図１３】本発明の第３の実施例の高周波電源装置の動
作を示す動作図FIG. 13 is an operation diagram showing the operation of the high frequency power supply device according to the third embodiment of the present invention.
【図１４】本発明の第４の実施例の高周波電源装置の動
作を示す動作図FIG. 14 is an operation diagram showing the operation of the high frequency power supply device according to the fourth embodiment of the present invention.
【図１５】本発明の第５の実施例の高周波電源装置の動
作を示す動作図FIG. 15 is an operation diagram showing the operation of the high frequency power supply device according to the fifth embodiment of the present invention.
【図１６】本発明の第６の実施例の高周波電源装置の回
路構成を示す図FIG. 16 is a diagram showing a circuit configuration of a high frequency power supply device according to a sixth embodiment of the present invention.
【図１７】本発明の第７の実施例の高周波電源装置の回
路構成を示す図FIG. 17 is a diagram showing a circuit configuration of a high frequency power supply device according to a seventh embodiment of the present invention.
【図１８】本発明の第７の実施例の高周波電源装置の動
作を示す動作図FIG. 18 is an operation diagram showing the operation of the high frequency power supply device according to the seventh embodiment of the present invention.
【図１９】本発明の第７の実施例の高周波電源装置の動
作を示す動作図FIG. 19 is an operation diagram showing the operation of the high frequency power supply device according to the seventh embodiment of the present invention.
【図２０】本発明の第８の実施例の高周波電源装置の回
路構成を示す動作図FIG. 20 is an operation diagram showing a circuit configuration of a high frequency power supply device according to an eighth embodiment of the present invention.
【図２１】本発明の第８の実施例の高周波電源装置の動
作を示す動作図FIG. 21 is an operation diagram showing the operation of the high frequency power supply device according to the eighth embodiment of the present invention.
【図２２】本発明の第９の実施例の高周波電源装置の回
路構成を示す動作図FIG. 22 is an operation diagram showing a circuit configuration of a high frequency power supply device according to a ninth embodiment of the present invention.
【図２３】本発明の第９の実施例の高周波電源装置の動
作を示す動作図FIG. 23 is an operation diagram showing the operation of the high frequency power supply device according to the ninth embodiment of the present invention.
【図２４】本発明の第１０の実施例の高周波電源装置の
回路構成を示す動作図FIG. 24 is an operation diagram showing a circuit configuration of a high frequency power supply device according to a tenth embodiment of the present invention.
【図２５】本発明の第１０の実施例の高周波電源装置の
動作を示す動作図FIG. 25 is an operation diagram showing the operation of the high frequency power supply device according to the tenth embodiment of the present invention.
【図２６】本発明の第１１の実施例の高周波電源装置の
回路構成を示す動作図FIG. 26 is an operation diagram showing a circuit configuration of a high frequency power supply device according to an eleventh embodiment of the present invention.
【図２７】従来の高周波電源装置の回路構成を示す図FIG. 27 is a diagram showing a circuit configuration of a conventional high frequency power supply device.
【図２８】従来の高周波電源装置の動作モードを示す図FIG. 28 is a diagram showing an operation mode of a conventional high frequency power supply device.
【図２９】従来の高周波電源装置の波形を示す図FIG. 29 is a diagram showing a waveform of a conventional high frequency power supply device.
【図３０】従来の高周波電源装置の波形を示す図FIG. 30 is a diagram showing a waveform of a conventional high frequency power supply device.
１ 商用電源 ２ フィルタ ３ チョークコイル ４ 第１の整流ダイオード ５ 第２の整流ダイオード ６ 第１の半導体スイッチ ７ 第２の半導体スイッチ ８ 第１のクランプコンデンサ ９ 第２のクランプコンデンサ １０ 第１の共振コンデンサ １１ 第２の共振コンデンサ １２ 負荷 １４ 制御手段 １５ 第１のコンデンサ １６ 第２のコンデンサ １７ 電圧検出手段 １８ 電流検出手段 ２０ 整流ダイオード ２１ 平滑コンデンサ ２２ 第３のクランプコンデンサ ３０ 目標信号設定手段 ３１ 目標上限設定手段 ３２ 目標下限設定手段 ３３ 第１の比較手段 ３４ 第２の比較手段 ３５ 制御信号発生手段 ３６ オン時間上限設定手段 ３７ 周波数下限設定手段 ３８ 第１の電圧検出手段 ３９ 第２の電圧検出手段 ４０ 入力電流検知手段 1 Commercial power supply 2 filters 3 choke coil 4 First rectifier diode 5 Second rectifier diode 6 First semiconductor switch 7 Second semiconductor switch 8 First clamp capacitor 9 Second clamp capacitor 10 First resonance capacitor 11 Second resonance capacitor 12 load 14 Control means 15 First capacitor 16 Second capacitor 17 Voltage detection means 18 Current detection means 20 Rectifier diode 21 Smoothing capacitor 22 Third clamp capacitor 30 Target signal setting means 31 Target upper limit setting means 32 Target lower limit setting means 33 First Comparison Means 34 Second Comparison Means 35 Control signal generating means 36 On-time upper limit setting means 37 Frequency lower limit setting means 38 First voltage detecting means 39 Second voltage detecting means 40 Input current detection means
───────────────────────────────────────────────────── フロントページの続き (72)発明者 石尾 嘉朗 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 Ｆターム(参考） 3K059 AA01 AA03 AA06 AB08 AC03 AC07 AC35 CD03 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Yoshio Ishio 1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric Sangyo Co., Ltd. F term (reference) 3K059 AA01 AA03 AA06 AB08 AC03 AC07 AC35 CD03
Claims (14)
続体と、前記第１及び第２の半導体スイッチの直列接続
体に並列接続される第１及び第２の整流ダイオードの直
列接続体と、前記第１または第２の半導体スイッチの端
子間に接続される負荷と共振コンデンサの直列接続体
と、前記１及び第２の整流ダイオードに各々並列に接続
される第１及び第２のクランプコンデンサとを有し、前
記第１及び第２の半導体スイッチの接続点と前記第１及
び第２の整流ダイオードの接続点間に、商用電源及びチ
ョークコイルの直列回路が接続されてなる高周波電源装
置。1. A series connection body of first and second semiconductor switches, and a series connection body of first and second rectifying diodes connected in parallel to the series connection body of the first and second semiconductor switches. A series connection of a load and a resonance capacitor connected between terminals of the first or second semiconductor switch, and first and second clamp capacitors connected in parallel to the first and second rectifying diodes, respectively. And a series circuit of a commercial power supply and a choke coil connected between a connection point of the first and second semiconductor switches and a connection point of the first and second rectifying diodes.
向に導通する半導体スイッチ素子とダイオードを逆並列
に接続してなる請求項１に記載の高周波電源装置。2. The high frequency power supply device according to claim 1, wherein the first and second semiconductor switches are formed by connecting a semiconductor switch element that conducts in a forward direction and a diode in antiparallel.
量を数μＦ〜数十μＦのフィルムコンデンサで構成した
請求項１〜２記載の高周波電源装置。3. The high frequency power supply device according to claim 1, wherein the first and second clamp capacitors are film capacitors each having a capacitance of several μF to several tens of μF.
量を略等しくした請求項１または２に記載の高周波電源
装置。4. The high frequency power supply device according to claim 1, wherein the first and second clamp capacitors have substantially the same capacitance.
くとも一方の端子間にコンデンサを接続したことを特徴
とする請求項１〜４のいずれか１項に記載の高周波電源
装置。5. The high frequency power supply device according to claim 1, wherein a capacitor is connected between at least one terminal of the first or second semiconductor switch.
間を商用電源電圧のピーク付近と谷間付近で変化させる
ことを特徴とする請求項１〜５のいずれか１項に記載の
高周波電源装置。6. The high frequency power supply device according to claim 1, wherein the conduction times of the first and second semiconductor switches are changed near the peak and the valley of the commercial power supply voltage. .
間を商用電源電圧の谷間付近でのスイッチング周波数を
ピーク付近よりも低く設定した請求項１〜６のいずれか
１項に記載の高周波電源装置。7. The high frequency power supply according to claim 1, wherein the conduction time of the first and second semiconductor switches is set so that the switching frequency near the valley of the commercial power supply voltage is lower than that near the peak. apparatus.
間の重なりを、商用電源電圧のピーク付近では短く、谷
間付近では長く設定する請求項６または７に記載の高周
波電源装置。8. The high-frequency power supply device according to claim 6, wherein the overlap between the non-conduction times of the first and second semiconductor switches is set short near the peak of the commercial power supply voltage and long near the valley.
電流検出手段を設け、前記チョークコイルの電流が正弦
波になるように制御する請求項１〜５のいずれか１項に
記載の高周波電源装置。9. The high frequency power supply device according to claim 1, further comprising a current detection unit that detects a current flowing through the choke coil, and controls the choke coil so that the current has a sine wave.
限と下限を設け、前記電流検出手段の値が上限と下限の
間に収まるように、第１及び第２の半導体スイッチの導
通時間を決める請求項９に記載の高周波電源装置。10. A comparison signal with the output of the current detection means is provided with an upper limit and a lower limit, and the conduction times of the first and second semiconductor switches are set so that the value of the current detection means falls between the upper limit and the lower limit. The high frequency power supply device according to claim 9, which is determined.
時間に上限を設ける請求項１０に記載の高周波電源装
置。11. The high frequency power supply device according to claim 10, wherein an upper limit is set for the conduction time of the first and second semiconductor switches.
の電圧を検知する電圧検出手段を設け、前記電圧検出手
段の検知する電圧値が所定値になるように前記第１及び
第２の半導体スイッチの導通時間を設定する請求項１〜
５のいずれか１項に記載の高周波電源装置。12. A voltage detection means for detecting the voltage of the first or second clamp capacitor is provided, and the voltage detection means detects the voltage value of the first or second semiconductor switch so that the voltage value becomes a predetermined value. A conduction time is set.
The high frequency power supply device according to any one of 5 above.
うに前記第１及び第２の半導体スイッチの導通時間を設
定する請求項１２に記載の高周波電源装置。13. The high frequency power supply device according to claim 12, wherein the conduction times of the first and second semiconductor switches are set so that the voltage values of the voltage detection means are the same.
出手段を設け、前記電源電流検出手段の積分値が零にな
るように、第１及び第２の半導体スイッチの導通時間を
設定する請求項１〜５のいずれか１項に記載の高周波電
源装置。14. A power supply current detection means for detecting the current of a commercial power supply is provided, and the conduction time of the first and second semiconductor switches is set so that the integrated value of the power supply current detection means becomes zero. The high frequency power supply device according to any one of 1 to 5.
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|---|---|---|---|
| JP2001268459A JP4752159B2 (en) | 2001-09-05 | 2001-09-05 | High frequency power supply |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001268459A JP4752159B2 (en) | 2001-09-05 | 2001-09-05 | High frequency power supply |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003077626A true JP2003077626A (en) | 2003-03-14 |
| JP4752159B2 JP4752159B2 (en) | 2011-08-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001268459A Expired - Fee Related JP4752159B2 (en) | 2001-09-05 | 2001-09-05 | High frequency power supply |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003077639A (en) * | 2001-09-05 | 2003-03-14 | Matsushita Electric Ind Co Ltd | Induction heater |
| WO2005039245A1 (en) * | 2003-10-16 | 2005-04-28 | Matsushita Electric Industrial Co., Ltd. | High frequency heating apparatus |
| EP1734791A1 (en) * | 2004-04-07 | 2006-12-20 | Matsushita Electric Industrial Co., Ltd. | High-frequency heating device |
| JP2006353085A (en) * | 2005-06-14 | 2006-12-28 | Ego Elektro Geraete Blanc & Fischer | Method and device for supplying electric power to induction heating mechanism |
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| JPH02231965A (en) * | 1989-03-01 | 1990-09-13 | Isao Takahashi | Constant voltage/constant frequency power supply equipment |
| JP2001016857A (en) * | 1999-04-30 | 2001-01-19 | High Frequency Heattreat Co Ltd | Power converter |
| JP2001112268A (en) * | 1999-10-06 | 2001-04-20 | Fuji Electric Co Ltd | High-frequency power unit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5172742A (en) * | 1974-12-19 | 1976-06-23 | Matsushita Electric Ind Co Ltd | |
| JPH02231965A (en) * | 1989-03-01 | 1990-09-13 | Isao Takahashi | Constant voltage/constant frequency power supply equipment |
| JP2001016857A (en) * | 1999-04-30 | 2001-01-19 | High Frequency Heattreat Co Ltd | Power converter |
| JP2001112268A (en) * | 1999-10-06 | 2001-04-20 | Fuji Electric Co Ltd | High-frequency power unit |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003077639A (en) * | 2001-09-05 | 2003-03-14 | Matsushita Electric Ind Co Ltd | Induction heater |
| WO2005039245A1 (en) * | 2003-10-16 | 2005-04-28 | Matsushita Electric Industrial Co., Ltd. | High frequency heating apparatus |
| US9357591B2 (en) | 2003-10-16 | 2016-05-31 | Panasonic Intellectual Property Management Co., Ltd. | High-frequency heating apparatus |
| EP1734791A1 (en) * | 2004-04-07 | 2006-12-20 | Matsushita Electric Industrial Co., Ltd. | High-frequency heating device |
| EP1734791A4 (en) * | 2004-04-07 | 2009-07-01 | Panasonic Corp | High-frequency heating device |
| US8217323B2 (en) | 2004-04-07 | 2012-07-10 | Panasonic Corporation | High-frequency heating device |
| JP2006353085A (en) * | 2005-06-14 | 2006-12-28 | Ego Elektro Geraete Blanc & Fischer | Method and device for supplying electric power to induction heating mechanism |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4752159B2 (en) | 2011-08-17 |
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