JP2003059879A - Wafer treatment method and apparatus - Google Patents

Wafer treatment method and apparatus

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Publication number
JP2003059879A
JP2003059879A JP2001243599A JP2001243599A JP2003059879A JP 2003059879 A JP2003059879 A JP 2003059879A JP 2001243599 A JP2001243599 A JP 2001243599A JP 2001243599 A JP2001243599 A JP 2001243599A JP 2003059879 A JP2003059879 A JP 2003059879A
Authority
JP
Japan
Prior art keywords
substrate
liquid
processing
ozone
liquid film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001243599A
Other languages
Japanese (ja)
Other versions
JP3976088B2 (en
Inventor
Kazunori Fujikawa
和憲 藤川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Dainippon Screen Manufacturing Co Ltd
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Publication date
Application filed by Dainippon Screen Manufacturing Co Ltd filed Critical Dainippon Screen Manufacturing Co Ltd
Priority to JP2001243599A priority Critical patent/JP3976088B2/en
Publication of JP2003059879A publication Critical patent/JP2003059879A/en
Application granted granted Critical
Publication of JP3976088B2 publication Critical patent/JP3976088B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide a process and device for treating a substrate, capable of raising the reaction rate of a wafer surface treatment by ozone. SOLUTION: A wafer treatment device comprises a wafer agent film forming means (lower half of a treating tub 1 and an agent supply system 2) for forming an agent film, by bringing a treatment agent into contact with a surface of a wafer W; and a wafer surface treating means (upper half of the treating tub 1 and an ozone gas supply system 4) which reacts an ozone gas at a predetermined which is higher in temperature than the treating agent on the wafer W formed with the agent film on the surface. Therefore, it becomes possible to control thinning of a boundary film which controls a reaction with an organic substance such as a resist, or the like on the wafer W, and it is possible to accelerate dissolution of ozone in the boundary film on the wafer of the wafer W, to increase concentration of soluble ozone, and to raise a reaction rate in a wafer surface treatment by ozone.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】本発明は、半導体ウエハ、液
晶表示器用のガラス基板、フォトマスク用のガラス基
板、光ディスク用の基板等（以下、単に基板と称する）
をオゾンにより表面処理する基板処理方法およびその装
置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer, a glass substrate for a liquid crystal display, a glass substrate for a photomask, a substrate for an optical disk, etc. (hereinafter simply referred to as a substrate).
The present invention relates to a substrate processing method and apparatus for surface-treating silicon with ozone.

【０００２】[0002]

【従来の技術】従来のこの種の基板処理装置としては、
例えば、気体としてのオゾンを純水に溶解させたオゾン
水を、オゾン水製造ユニットで製造して処理槽に供給
し、この処理槽内のオゾン水中に基板としてのウエハを
浸漬させてこのウエハにオゾン水処理を施し、ウエハ表
面上のフォトレジスト（以下、適宜にレジストと呼ぶ）
などの有機物を剥離させるものがある。2. Description of the Related Art As a conventional substrate processing apparatus of this type,
For example, ozone water obtained by dissolving ozone as a gas in pure water is manufactured by an ozone water manufacturing unit and supplied to a processing tank, and a wafer as a substrate is immersed in the ozone water in the processing tank to form a wafer on the wafer. Photoresist on the wafer surface after ozone water treatment (hereinafter referred to as resist)
There is something that peels off organic substances such as.

【０００３】[0003]

【発明が解決しようとする課題】しかしながら、このよ
うな従来例装置の場合には、次のような問題がある。す
なわち、オゾン水製造ユニットで製造したオゾン水を処
理槽に供給する場合には、オゾンの分解により、処理槽
への供給ライン中にオゾン水の溶存オゾン濃度が低下
し、オゾン水のユースポイントである処理槽では十分な
溶存オゾン濃度が得られず、ウエハ表面上のレジストを
剥離するレジスト剥離速度は遅く、スループットが低く
なるという問題がある。However, such a conventional apparatus has the following problems. That is, when the ozone water produced by the ozone water production unit is supplied to the treatment tank, the dissolved ozone concentration of the ozone water decreases in the supply line to the treatment tank due to the decomposition of ozone, and the ozone water is used at the point of use. There is a problem that a certain treatment tank cannot obtain a sufficient dissolved ozone concentration, the resist stripping speed for stripping the resist on the wafer surface is slow, and the throughput is low.

【０００４】また、前述したようにウエハを処理槽内の
オゾン水中に浸漬させて処理する場合、レジスト剥離速
度を速くするためには、ウエハ表面のレジスト上の反応
を支配している境膜を薄くする必要があり、そのために
ウエハ近傍のオゾン水の流速を上げなければならない。
そこで、供給される純水中にオゾンを溶解させてオゾン
水を製造する溶解モジュールを使用し、この溶解モジュ
ールに供給する純水の供給量を増加することで、ウエハ
近傍の流速を上げることが考えられるが、この場合に
は、単位時間当たりの純水の供給量と溶存オゾン濃度と
は相反する関係にあるため、純水の供給量を増加すると
溶存オゾン濃度が低下することになる。その結果、レジ
スト剥離速度は遅く、スループットが低くなるという問
題がある。Further, as described above, when a wafer is immersed in ozone water in a processing tank for processing, in order to increase the resist stripping rate, a barrier film which controls the reaction on the resist on the wafer surface is used. It is necessary to make it thin, and therefore the flow rate of ozone water near the wafer must be increased.
Therefore, a dissolution module that dissolves ozone in pure water supplied to produce ozone water is used, and the flow rate near the wafer can be increased by increasing the supply amount of pure water supplied to the dissolution module. In this case, since the supply amount of pure water per unit time and the dissolved ozone concentration have a contradictory relationship in this case, increasing the supply amount of pure water lowers the dissolved ozone concentration. As a result, there is a problem that the resist peeling speed is slow and the throughput is low.

【０００５】また、レジスト剥離速度を上げるために
は、ウエハ温度を上げると効果的であるが、ウエハの温
度のみを上げることはできず、オゾン水の温度も上げる
ことになり、オゾン水の温度が上がるとこのオゾン水の
溶存オゾン濃度が低下することになるため、ウエハ温度
を上げて高濃度のオゾン水と反応させることはできな
い。Further, in order to increase the resist stripping speed, it is effective to raise the wafer temperature, but it is not possible to raise only the wafer temperature and the ozone water temperature is also raised. Since the dissolved ozone concentration of this ozone water decreases as the temperature rises, it is not possible to raise the wafer temperature to react with ozone water of high concentration.

【０００６】本発明は、このような事情に鑑みてなされ
たものであって、オゾンによる基板表面処理の反応速度
を向上させることができる基板処理方法およびその装置
を提供することを目的とする。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a substrate processing method and apparatus capable of improving the reaction rate of the substrate surface treatment with ozone.

【０００７】[0007]

【課題を解決するための手段】本発明は、このような目
的を達成するために、次のような構成をとる。すなわ
ち、請求項１に記載の基板処理方法は、基板を表面処理
する基板処理方法において、基板の表面上に処理液を接
触させて液膜を形成する第１工程と、前記第１工程によ
り表面上に液膜が形成された基板に、処理液よりも高い
所定温度の気体としてのオゾンを作用させてこの基板を
表面処理する第２工程とを備えていることを特徴とする
ものである。The present invention has the following constitution in order to achieve such an object. That is, the substrate processing method according to claim 1, wherein in the substrate processing method of surface-treating a substrate, a first step of forming a liquid film by bringing a processing liquid into contact with the surface of the substrate, and the surface by the first step. The second step of subjecting the substrate, on which the liquid film is formed, a surface treatment of the substrate by causing ozone as a gas having a predetermined temperature higher than that of the treatment liquid to act on the substrate.

【０００８】また、請求項２に記載の基板処理方法は、
請求項１に記載の基板処理方法において、前記第１工程
は、基板を処理液に浸漬させ、処理液から取り出すこと
で、基板の表面上に液膜を形成することを特徴とするも
のである。Further, the substrate processing method according to claim 2 is
The substrate processing method according to claim 1, wherein in the first step, the liquid film is formed on the surface of the substrate by immersing the substrate in the processing liquid and removing the substrate from the processing liquid. .

【０００９】また、請求項３に記載の基板処理方法は、
請求項１または請求項２に記載の基板処理方法におい
て、前記第１工程と前記第２工程とを同時に行うことを
特徴とするものである。Further, the substrate processing method according to claim 3 is
The substrate processing method according to claim 1 or 2, wherein the first step and the second step are performed simultaneously.

【００１０】また、請求項４に記載の基板処理装置は、
基板を表面処理する処理部を備えた基板処理装置におい
て、前記処理部は、基板の表面上に処理液を接触させて
液膜を形成する基板液膜形成手段と、前記基板液膜形成
手段により表面上に液膜が形成された基板に、処理液よ
りも高い所定温度の気体としてのオゾンを作用させてこ
の基板を表面処理する基板表面処理手段とを備えている
ことを特徴とするものである。A substrate processing apparatus according to a fourth aspect is
In a substrate processing apparatus including a processing unit for surface-treating a substrate, the processing unit includes a substrate liquid film forming unit that forms a liquid film by bringing a processing liquid into contact with the surface of the substrate, and the substrate liquid film forming unit. A substrate having a liquid film formed on the surface thereof is provided with a substrate surface treating means for treating the substrate with ozone as a gas having a predetermined temperature higher than that of the treating liquid. is there.

【００１１】また、請求項５に記載の基板処理装置は、
請求項４に記載の基板処理装置において、前記基板液膜
形成手段による基板上への液膜形成と、前記基板表面処
理手段による基板への気体としてのオゾンの作用とを同
時に行うことを特徴とするものである。A substrate processing apparatus according to a fifth aspect of the present invention is
The substrate processing apparatus according to claim 4, wherein the liquid film formation on the substrate by the substrate liquid film forming means and the action of ozone as a gas on the substrate by the substrate surface processing means are performed simultaneously. To do.

【００１２】また、請求項６に記載の基板処理装置は、
請求項４または請求項５に記載の基板処理装置におい
て、前記基板液膜形成手段は、基板を処理液に浸漬さ
せ、処理液から取り出すことで、基板の表面上に液膜を
形成することを特徴とするものである。A substrate processing apparatus according to a sixth aspect is
The substrate processing apparatus according to claim 4 or 5, wherein the substrate liquid film forming means forms a liquid film on the surface of the substrate by immersing the substrate in the processing liquid and removing the substrate from the processing liquid. It is a feature.

【００１３】また、請求項７に記載の基板処理装置は、
請求項５に記載の基板処理装置において、前記基板液膜
形成手段は、基板の一部分に処理液を接触させた状態で
この基板を回転させて、基板の処理液接触箇所を回転と
ともに変更させることで、基板全面にわたって液膜を形
成し、前記基板表面処理手段は、前記基板液膜形成手段
により液膜が形成されて回転される基板に、処理液より
も高い所定温度の気体としてのオゾンを作用させてこの
基板を表面処理することを特徴とするものである。A substrate processing apparatus according to claim 7 is
6. The substrate processing apparatus according to claim 5, wherein the substrate liquid film forming means rotates the substrate in a state where the processing liquid is in contact with a part of the substrate and changes the processing liquid contact portion of the substrate with the rotation. Then, a liquid film is formed over the entire surface of the substrate, and the substrate surface treatment means applies ozone as a gas at a predetermined temperature higher than the treatment liquid to the substrate on which the liquid film is formed by the substrate liquid film formation means and is rotated. It is characterized in that the substrate is subjected to a surface treatment by acting.

【００１４】また、請求項８に記載の基板処理装置は、
請求項５または請求項６に記載の基板処理装置におい
て、前記基板液膜形成手段は、処理液が供給されて所定
量の処理液を収容する処理槽と、基板の処理液浸漬箇所
を変更させて、基板全面にわたって液膜を形成させるよ
うに、前記処理槽内の処理液中に基板の一部を浸漬させ
た状態で基板を回転させる基板回転手段とを備え、前記
基板表面処理手段は、前記基板回転手段により前記処理
槽内で回転される基板のうちの処理液浸漬箇所以外の箇
所に、処理液よりも高い所定温度の気体としてのオゾン
を作用させてこの基板を表面処理することを特徴とする
ものである。Further, the substrate processing apparatus according to claim 8 is
The substrate processing apparatus according to claim 5 or 6, wherein the substrate liquid film forming means changes a processing tank to which a processing liquid is supplied and stores a predetermined amount of the processing liquid, and a processing liquid dipping portion of the substrate. And a substrate rotating means for rotating the substrate in a state where a part of the substrate is immersed in the processing liquid in the processing bath so as to form a liquid film over the entire surface of the substrate, the substrate surface processing means, Surface treatment of the substrate is performed by causing ozone as a gas having a predetermined temperature higher than that of the treatment liquid to act on a portion other than the treatment liquid immersion portion of the substrate rotated in the treatment tank by the substrate rotating means. It is a feature.

【００１５】また、請求項９に記載の基板処理装置は、
請求項８に記載の基板処理装置において、前記基板回転
手段は、前記処理槽内において基板を所定の姿勢状態に
保持する保持手段を備え、多数の貫通孔が形成された羽
根部材が前記保持手段に設けられ、基板を回転させるよ
うに前記保持手段を回転駆動することに伴って前記羽根
部材を回転させて、前記羽根部材の回転作用によって前
記処理槽内の処理液中にオゾンを溶解させることを特徴
とするものである。A substrate processing apparatus according to a ninth aspect is
The substrate processing apparatus according to claim 8, wherein the substrate rotating means includes a holding means for holding the substrate in a predetermined posture in the processing tank, and the blade member having a large number of through holes is the holding means. The blade member is rotated in association with the rotation of the holding means so as to rotate the substrate, and ozone is dissolved in the processing liquid in the processing tank by the rotating action of the blade member. It is characterized by.

【００１６】また、請求項１０に記載の基板処理装置
は、請求項４から請求項９のいずれかに記載の基板処理
装置において、前記処理部は、気体としてのオゾンを前
記基板表面処理手段に供給する経路にこのオゾンを昇温
するための加熱手段を備えていることを特徴とするもの
である。A substrate processing apparatus according to a tenth aspect of the present invention is the substrate processing apparatus according to any one of the fourth to ninth aspects, wherein the processing section applies ozone as a gas to the substrate surface processing means. A heating means for raising the temperature of the ozone is provided in the supply path.

【００１７】また、請求項１１に記載の基板処理装置
は、請求項４から請求項１０のいずれかに記載の基板処
理装置において、前記基板液膜形成手段から排出された
処理液を前記基板液膜形成手段に戻して基板の表面処理
に再利用するように、処理液を循環させる循環手段を備
えていることを特徴とするものである。The substrate processing apparatus according to claim 11 is the substrate processing apparatus according to any one of claims 4 to 10, wherein the processing liquid discharged from the substrate liquid film forming means is the substrate liquid. It is characterized in that a circulation means for circulating the treatment liquid is provided so as to be returned to the film forming means and reused for the surface treatment of the substrate.

【００１８】また、請求項１２に記載の基板処理装置
は、請求項４から請求項１１のいずれかに記載の基板処
理装置において、前記基板液膜形成手段に供給される処
理液を所定の温度に昇温させる処理液昇温手段を備えて
いることを特徴とするものである。A substrate processing apparatus according to a twelfth aspect is the substrate processing apparatus according to any one of the fourth to eleventh aspects, in which the processing liquid supplied to the substrate liquid film forming means has a predetermined temperature. It is characterized in that it is provided with a treatment liquid temperature raising means for raising the temperature.

【００１９】また、請求項１３に記載の基板処理装置
は、請求項４から請求項１２のいずれかに記載の基板処
理装置において、前記処理部は、前記基板液膜形成手段
による基板上への液膜形成と、前記基板表面処理手段に
よる基板への気体としてのオゾンの作用とを、大気圧よ
りも高い所定の加圧下で処理を行うための加圧手段を備
えていることを特徴とするものである。A substrate processing apparatus according to a thirteenth aspect is the substrate processing apparatus according to any one of the fourth to twelfth aspects, wherein the processing section is provided on the substrate by the substrate liquid film forming means. It is characterized by comprising a pressurizing means for performing the liquid film formation and the action of ozone as a gas on the substrate by the substrate surface treating means under a predetermined pressure higher than atmospheric pressure. It is a thing.

【００２０】また、請求項１４に記載の基板処理装置
は、請求項４から請求項１３のいずれかに記載の基板処
理装置において、基板をオゾン雰囲気中で作用させる前
記処理部の壁面を所定温度に昇温する壁面昇温手段を備
えていることを特徴とするものである。Further, a substrate processing apparatus according to a fourteenth aspect is the substrate processing apparatus according to any one of the fourth to thirteenth aspects, wherein the wall surface of the processing section that causes the substrate to act in an ozone atmosphere has a predetermined temperature. It is characterized by comprising wall surface temperature raising means for raising the temperature.

【００２１】[0021]

【作用】請求項１に記載の発明の作用は次のとおりであ
る。第１工程では、基板の表面上に処理液を接触させて
液膜を形成する。第２工程では、第１工程により表面上
に液膜が形成された基板に、処理液よりも高い所定温度
の気体としてのオゾンを作用させてこの基板を表面処理
する。したがって、基板表面上に液膜を形成するので、
この液膜の内部で基板表面の極めて薄い層流の部分であ
る、基板表面のレジストなどの有機物との反応を支配す
る境膜を、薄くする制御が可能となり、処理液の温度よ
りも高い所定温度に昇温させた気体としてのオゾンをこ
の基板に作用させているので、基板表面の境膜へのオゾ
ンの溶解が促進され、溶存オゾン濃度が高められる。ま
た、処理液よりも高く加熱されたオゾンにより液膜に熱
が与えられることで、処理液を蒸発させて境膜をさらに
薄くでき、境膜中のオゾンの拡散が容易となり、オゾン
による基板表面処理の反応速度が上がる。The operation of the invention described in claim 1 is as follows. In the first step, the treatment liquid is brought into contact with the surface of the substrate to form a liquid film. In the second step, the substrate having the liquid film formed on the surface thereof in the first step is treated with ozone as a gas having a predetermined temperature higher than that of the treatment liquid to perform the surface treatment of the substrate. Therefore, since a liquid film is formed on the substrate surface,
Inside the liquid film, the boundary film, which is an extremely thin laminar flow portion on the substrate surface and governs the reaction with organic substances such as resist on the substrate surface, can be controlled to be thin, and the temperature higher than the temperature of the processing liquid can be controlled. Since ozone as a gas heated to the temperature is made to act on this substrate, the dissolution of ozone in the boundary film on the substrate surface is promoted, and the dissolved ozone concentration is increased. In addition, heat is applied to the liquid film by the ozone that is heated higher than the treatment liquid, so that the treatment liquid can be evaporated and the boundary film can be made thinner, and the diffusion of ozone in the boundary film becomes easier, and the substrate surface by the ozone can be made easier. The reaction speed of processing increases.

【００２２】また、請求項２に記載の発明によれば、第
１工程は、基板を処理液に浸漬させてから取り出すこと
で、基板の表面上に液膜を形成している。したがって、
基板の表面上に好適に液膜が形成される。According to the second aspect of the present invention, in the first step, the liquid film is formed on the surface of the substrate by immersing the substrate in the treatment liquid and then taking it out. Therefore,
A liquid film is preferably formed on the surface of the substrate.

【００２３】また、請求項３に記載の発明によれば、第
１工程と第２工程とを同時に行っている。したがって、
第１工程完了後に第２工程を施す場合に比べて、第１工
程と第２工程とが同時に行われることによって、オゾン
による基板表面の処理時間が短縮される。According to the third aspect of the invention, the first step and the second step are performed simultaneously. Therefore,
Compared to the case where the second step is performed after the completion of the first step, the processing time of the substrate surface with ozone is shortened by simultaneously performing the first step and the second step.

【００２４】また、請求項４に記載の発明によれば、基
板液膜形成手段は、基板の表面上に処理液を接触させて
液膜を形成する。基板表面処理手段は、基板液膜形成手
段により表面上に液膜が形成された基板に、処理液より
も高い所定温度の気体としてのオゾンを作用させてこの
基板を表面処理する。したがって、基板表面上に液膜を
形成するので、この液膜の内部で基板表面の極めて薄い
層流の部分である、基板表面のレジストなどの有機物と
の反応を支配する境膜を、薄くする制御が可能となり、
処理液の温度よりも高い所定温度に昇温させた気体とし
てのオゾンをこの基板に作用させているので、基板表面
の境膜へのオゾンの溶解が促進され、溶存オゾン濃度が
高められる。また、処理液よりも高く加熱されたオゾン
により液膜に熱が与えられることで、処理液を蒸発させ
て境膜をさらに薄くでき、境膜中のオゾンの拡散が容易
となり、オゾンによる基板表面処理の反応速度が上が
る。According to the fourth aspect of the invention, the substrate liquid film forming means forms a liquid film by bringing the processing liquid into contact with the surface of the substrate. The substrate surface treatment means treats the substrate, on which the liquid film is formed on the surface by the substrate liquid film forming means, with ozone as a gas having a predetermined temperature higher than that of the treatment liquid to perform the surface treatment on the substrate. Therefore, since the liquid film is formed on the surface of the substrate, the boundary film that controls the reaction with organic substances such as resist on the surface of the substrate, which is an extremely thin laminar flow portion of the substrate surface inside the liquid film, is thinned. Control is possible,
Since ozone as a gas heated to a predetermined temperature higher than the temperature of the processing liquid is made to act on this substrate, the dissolution of ozone in the boundary film on the surface of the substrate is promoted and the dissolved ozone concentration is increased. In addition, heat is applied to the liquid film by the ozone that is heated higher than the treatment liquid, so that the treatment liquid can be evaporated and the boundary film can be made thinner, and the diffusion of ozone in the boundary film becomes easier, and the substrate surface by the ozone can be made easier. The reaction speed of processing increases.

【００２５】また、請求項５に記載の発明によれば、基
板液膜形成手段による基板上への液膜形成と、基板表面
処理手段による基板への気体としてのオゾンの作用とを
同時に行っている。したがって、基板上への液膜形成と
この基板へのオゾンの作用とが同時に行われることによ
って、オゾンによる基板表面の処理時間を、基板上への
液膜形成が完了した後にこの基板にオゾンを作用させる
場合に比べて短縮できる。According to the fifth aspect of the invention, the formation of the liquid film on the substrate by the substrate liquid film forming means and the action of ozone as a gas on the substrate by the substrate surface treatment means are performed simultaneously. There is. Therefore, by simultaneously performing the formation of the liquid film on the substrate and the action of ozone on the substrate, it is possible to reduce the processing time of the surface of the substrate by the ozone and the ozone on the substrate after the formation of the liquid film on the substrate is completed. It can be shortened compared to when it is operated.

【００２６】また、請求項６に記載の発明によれば、基
板液膜形成手段は、基板を処理液に浸漬させて、処理液
から取り出すことで、基板の表面上に液膜を形成する。
したがって、基板の表面上に好適に液膜が形成される。According to the sixth aspect of the invention, the substrate liquid film forming means forms the liquid film on the surface of the substrate by immersing the substrate in the processing liquid and taking it out from the processing liquid.
Therefore, the liquid film is preferably formed on the surface of the substrate.

【００２７】また、請求項７に記載の発明によれば、基
板液膜形成手段は、基板の一部分に処理液を接触させた
状態でこの基板を回転させて、基板の処理液接触箇所を
回転とともに変更させることで、基板全面にわたって液
膜を形成し、基板表面処理手段は、基板液膜形成手段に
より液膜が形成されて回転される基板に、処理液よりも
高い所定温度の気体としてのオゾンを作用させてこの基
板を表面処理する。したがって、基板上への液膜形成と
この基板へのオゾンの作用とを同時に行う構成を実現で
き、オゾンによる基板表面の処理時間を短縮できる。Further, according to the invention described in claim 7, the substrate liquid film forming means rotates the substrate in a state where the processing liquid is in contact with a part of the substrate and rotates the processing liquid contact portion of the substrate. The liquid crystal film is formed on the entire surface of the substrate by changing the temperature of the liquid crystal layer, and the substrate surface processing means forms a liquid film on the substrate by the liquid crystal film forming means and rotates the substrate as a gas having a predetermined temperature higher than that of the processing liquid. The substrate is surface-treated by applying ozone. Therefore, it is possible to realize a configuration in which the formation of the liquid film on the substrate and the action of ozone on the substrate are performed at the same time, and the treatment time of the substrate surface with ozone can be shortened.

【００２８】また、請求項８に記載の発明によれば、基
板液膜形成手段は、処理液が供給されて所定量の処理液
を収容する処理槽と、基板の処理液浸漬箇所を変更させ
て、基板全面にわたって液膜を形成させるように、処理
槽内の処理液中に基板の一部を浸漬させた状態で基板を
回転させる基板回転手段とを備えている。基板表面処理
手段は、基板回転手段により処理槽内で回転される基板
のうちの処理液浸漬箇所以外の箇所に、処理液よりも高
い所定温度の気体としてのオゾンを作用させてこの基板
を表面処理する。したがって、基板の一部を処理液中に
浸漬するタイプのものであっても、基板上への液膜形成
とこの基板へのオゾンの作用とを同時に行う構成を実現
でき、オゾンによる基板表面の処理時間を短縮できる。Further, according to the invention described in claim 8, the substrate liquid film forming means changes the treatment tank to which the treatment liquid is supplied and accommodates a predetermined amount of the treatment liquid, and the treatment liquid immersion portion of the substrate. And a substrate rotating means for rotating the substrate in a state where a part of the substrate is immersed in the processing liquid in the processing bath so that a liquid film is formed on the entire surface of the substrate. The substrate surface treating means applies ozone as a gas having a predetermined temperature higher than that of the treatment liquid to a portion of the substrate rotated in the treatment tank by the substrate rotating means other than the treatment liquid dipping portion so as to surface the substrate. To process. Therefore, even in the case of the type in which a part of the substrate is immersed in the treatment liquid, it is possible to realize a configuration in which the liquid film formation on the substrate and the action of ozone on the substrate are performed at the same time. The processing time can be shortened.

【００２９】また、請求項９に記載の発明によれば、基
板回転手段は、処理槽内において基板を所定の姿勢状態
に保持する保持手段と、保持手段に設けられて、多数の
貫通孔が形成された羽根部材とを備えている。基板回転
手段は、基板を回転させるように保持手段を回転駆動す
ることに伴って羽根部材を回転させて、この羽根部材の
回転作用によって処理槽内の処理液中にオゾンを溶解さ
せる。したがって、処理液中にオゾンを積極的に溶解さ
せることができ、処理液への浸漬中においても処理液中
のオゾンとの反応が起こり、すなわち、基板が処理液に
浸漬している箇所もこの処理液中のオゾンと反応させる
ことができ、オゾンによる基板表面処理の反応速度がさ
らに向上する。According to the ninth aspect of the present invention, the substrate rotating means is provided with the holding means for holding the substrate in a predetermined posture in the processing tank, and the holding means is provided with a large number of through holes. And a blade member formed. The substrate rotating means rotates the blade member in association with rotationally driving the holding means so as to rotate the substrate, and the rotation action of the blade member dissolves ozone in the processing liquid in the processing tank. Therefore, ozone can be positively dissolved in the treatment liquid, and a reaction with ozone in the treatment liquid occurs even during the immersion in the treatment liquid, that is, even at a portion where the substrate is immersed in the treatment liquid. It can be reacted with ozone in the treatment liquid, and the reaction rate of the substrate surface treatment with ozone is further improved.

【００３０】また、請求項１０に記載の発明によれば、
加熱手段は、気体としてのオゾンを昇温して基板表面処
理手段に供給するので、基板に作用させる昇温したオゾ
ンを好適に供給でき、昇温されたオゾンによって基板表
面の境膜を薄くすることができ、境膜中のオゾンの拡散
が容易となり、オゾンによる基板表面処理の反応速度が
上がる。According to the invention described in claim 10,
Since the heating means raises the temperature of ozone as a gas and supplies it to the substrate surface treatment means, it is possible to preferably supply the raised ozone that acts on the substrate, and the raised ozone thins the film on the surface of the substrate. Therefore, the diffusion of ozone in the film becomes easy, and the reaction rate of the substrate surface treatment with ozone increases.

【００３１】また、請求項１１に記載の発明によれば、
循環手段は、基板液膜形成手段から排出された処理液を
基板液膜形成手段に戻して基板の表面処理に再利用する
ように、処理液を循環させるので、処理液の利用効率を
向上させることができ、処理液の使用量を必要最小限に
まで低減できる。According to the invention described in claim 11,
The circulation means circulates the processing liquid so that the processing liquid discharged from the substrate liquid film forming means is returned to the substrate liquid film forming means and reused for the surface treatment of the substrate, so that the utilization efficiency of the processing liquid is improved. It is possible to reduce the amount of processing liquid used to the minimum necessary.

【００３２】また、請求項１２に記載の発明によれば、
処理液昇温手段は、基板液膜形成手段に供給される処理
液を所定の温度に昇温する。したがって、昇温された処
理液によって基板の温度を上昇させることができ、基板
の昇温によってこの基板のオゾンによる基板表面処理の
反応速度がさらに向上する。According to the invention of claim 12,
The processing liquid temperature raising means raises the temperature of the processing liquid supplied to the substrate liquid film forming means to a predetermined temperature. Therefore, the temperature of the substrate can be raised by the heated processing liquid, and the reaction temperature of the substrate surface treatment with ozone of the substrate is further improved by the temperature rise of the substrate.

【００３３】また、請求項１３に記載の発明によれば、
処理部は、基板液膜形成手段による基板上への液膜形成
と、基板表面処理手段による基板への気体としてのオゾ
ンの作用とを、大気圧よりも高い所定の加圧下で処理を
行うための加圧手段を備えている。したがって、基板上
への液膜形成とオゾンによる表面処理とを大気圧よりも
高い加圧下で行うことで、基板表面上の液膜に溶解する
オゾンの溶解度をより一層高くすることができ、境膜内
の溶存オゾン濃度が高くなり、より一層、オゾンによる
基板表面処理の反応速度を向上させることができる。According to the invention described in claim 13,
The processing unit processes the liquid film formation on the substrate by the substrate liquid film forming unit and the action of ozone as a gas on the substrate by the substrate surface processing unit under a predetermined pressure higher than atmospheric pressure. The pressurizing means is provided. Therefore, by performing the liquid film formation on the substrate and the surface treatment with ozone under a pressure higher than atmospheric pressure, it is possible to further increase the solubility of ozone dissolved in the liquid film on the substrate surface. The dissolved ozone concentration in the film is increased, and the reaction rate of the substrate surface treatment with ozone can be further improved.

【００３４】また、請求項１４に記載の発明によれば、
壁面昇温手段は、基板をオゾン雰囲気中で作用させる処
理部におけるオゾンの接触する壁面を、所定温度に昇温
する。したがって、処理部に供給されたオゾンが、この
処理部の温度の低い壁面に接触することで、オゾンの温
度が低下し、基板表面の境膜へのオゾンの溶解が低下す
るようなことを低減できる。According to the invention described in claim 14,
The wall surface temperature raising means raises the temperature of the wall surface of the processing section that makes the substrate act in the ozone atmosphere, which comes into contact with ozone, to a predetermined temperature. Therefore, it is possible to prevent the ozone supplied to the processing unit from contacting the wall surface of the processing unit having a low temperature, thereby lowering the temperature of the ozone and lowering the dissolution of ozone in the boundary film on the substrate surface. it can.

【００３５】[0035]

【発明の実施の形態】以下、本発明の実施例を図面を参
照しながら説明する。以下に説明する本発明の実施例に
係る基板処理装置は、表面上に処理液（例えば純水）に
よる液膜を形成させたウエハなどの基板に、気体として
のオゾンＯ3 （以下、適宜にオゾンガスと呼ぶ）を作用
させて、この基板を表面処理するものである。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. A substrate processing apparatus according to an embodiment of the present invention described below includes a substrate such as a wafer having a liquid film formed by a processing liquid (for example, pure water) formed on a surface of a substrate such as ozone O 3 (hereinafter, appropriately referred to as gas). The surface treatment of this substrate is performed by the action of ozone gas).

【００３６】〈第１実施例〉本発明の第１実施例に係る
基板処理装置について、図１〜図５を参照して説明す
る。図１は、本発明の第１実施例に係る基板処理装置の
概略構成を示すブロック図であり、図２は、本発明の第
１実施例に係る基板処理装置の処理槽の概略構成を示す
外観斜視図であり、図３は、本発明の第１実施例に係る
基板処理装置の処理槽の概略構成を示す縦断面図であ
り、図４（ａ）は処理槽内の回転ドラムの概略側面図で
あり、図４（ｂ）は図４（ａ）に示した回転ドラムの保
持桿に設けられたフィンの概略正面図であり、図５は、
本発明の第１実施例に係る基板処理装置の各動作の流れ
を説明するためのタイムチャートである。<First Embodiment> A substrate processing apparatus according to a first embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a block diagram showing a schematic configuration of a substrate processing apparatus according to a first embodiment of the present invention, and FIG. 2 shows a schematic configuration of a processing tank of the substrate processing apparatus according to the first embodiment of the present invention. FIG. 4 is an external perspective view, FIG. 3 is a vertical cross-sectional view showing a schematic configuration of a processing tank of the substrate processing apparatus according to the first embodiment of the present invention, and FIG. 4A is a schematic view of a rotary drum in the processing tank. 4B is a side view, FIG. 4B is a schematic front view of the fins provided on the holding rod of the rotary drum shown in FIG. 4A, and FIG.
5 is a time chart for explaining the flow of each operation of the substrate processing apparatus according to the first embodiment of the present invention.

【００３７】この基板処理装置は、図１に示すように、
大きく分けて、基板Ｗの表面に処理液としての純水を接
触させて純水による液膜を形成するとともに、表面上に
液膜が形成された基板Ｗに、純水よりも高い所定温度の
気体としてのオゾン（オゾンガス）を作用させてこの基
板Ｗを表面処理（例えば、基板Ｗの表面上のレジストな
どの有機物を剥離させる処理）するための処理槽１と、
この処理槽１に純水などの処理液や純水に所定の薬液を
混合させた混合液などを供給するための液供給系２と、
この処理槽１から処理液や混合液を排出する排液系３
と、この処理槽１にオゾンガスを供給するためのオゾン
ガス供給系４と、この処理槽１からオゾンガスを排出す
る排気系５とを備えている。This substrate processing apparatus, as shown in FIG.
Broadly speaking, pure water as a processing liquid is brought into contact with the surface of the substrate W to form a liquid film of pure water, and the substrate W having the liquid film formed on the surface has a predetermined temperature higher than that of pure water. A treatment tank 1 for performing a surface treatment (for example, a treatment for peeling off an organic substance such as a resist on the surface of the substrate W) by applying ozone (ozone gas) as a gas.
A liquid supply system 2 for supplying a treatment liquid such as pure water or a mixed liquid in which a predetermined chemical liquid is mixed with pure water to the treatment tank 1,
A drainage system 3 for discharging the processing liquid or the mixed liquid from the processing tank 1.
And an ozone gas supply system 4 for supplying ozone gas to the processing tank 1, and an exhaust system 5 for discharging ozone gas from the processing tank 1.

【００３８】なお、この基板処理装置は、上述したよう
に、基板Ｗが収容された処理槽１にオゾンガスを供給し
て基板Ｗの表面上の有機物を剥離させる「第１処理」の
他に、例えば、処理槽１に混合液を供給して混合液によ
って基板Ｗを混合液処理する「第２処理」や、混合液や
オゾンなどによる基板Ｗの処理後に純水のみを処理槽１
に供給して基板Ｗを洗浄処理する「第３処理」や、処理
槽１に窒素ガスなどの不活性ガスを供給して基板Ｗを乾
燥処理する「第４処理」などの機能を備えており、この
第１〜第４処理などを所定の順に、あるいは、この第１
〜第４処理などから選択された処理を適宜に実行できる
装置である。以下、各部の構成を詳細に説明する。As described above, this substrate processing apparatus supplies the ozone gas to the processing tank 1 in which the substrate W is housed to remove the organic substances on the surface of the substrate W, and For example, a “second process” in which the mixed liquid is supplied to the processing tank 1 to process the substrate W with the mixed liquid, or only pure water is processed after the substrate W is processed with the mixed liquid or ozone.
It has a function such as "third processing" for supplying the substrate W to the substrate W for cleaning processing, and "fourth processing" for supplying the processing tank 1 with an inert gas such as nitrogen gas to dry the substrate W. , The first to fourth processes, etc. in a predetermined order, or the first
It is an apparatus that can appropriately execute the process selected from the fourth process and the like. Hereinafter, the configuration of each unit will be described in detail.

【００３９】液供給系２は、純水のみを処理槽１に供給
したり、純水に所定の薬液を混合させた混合液を処理槽
１に供給するものである。液供給系２は、純水供給源か
らの純水をインラインミキシングバルブ１１に導入する
ための純水導入管１２と、インラインミキシングバルブ
１１からの純水や混合液などを処理槽１に導入するため
の共通導入管１３とを備えている。The liquid supply system 2 supplies only pure water to the processing tank 1 or supplies a mixed solution in which pure water is mixed with a predetermined chemical liquid to the processing tank 1. The liquid supply system 2 introduces pure water from a pure water supply source into the in-line mixing valve 11 and a pure water introducing pipe 12 from the in-line mixing valve 11 into the processing tank 1. And a common introduction pipe 13 for

【００４０】なお、インラインミキシングバルブ１１
は、純水に所定の薬液を混合させて混合液を生成し、こ
の混合液を処理槽１へ供給するためのものである。イン
ラインミキシングバルブ１１には、各薬液の供給管１５
ａ〜１５ｄが接続されており、薬液のインラインミキシ
ングバルブ１１への供給とその停止とを切り換えるため
の開閉弁１６ａ〜１６ｄが、供給管１５ａ〜１５ｄに設
けられている。純水導入管１２には、純水の処理槽１へ
の供給とその停止とを切り換えるための開閉弁１４と、
与えられる空気圧（パイロット圧）に応じて二次側（イ
ンラインミキシングバルブ１１側）の純水の圧力を調整
する圧力調整器１７とが備えられている。The in-line mixing valve 11
Is for mixing a predetermined chemical liquid with pure water to generate a mixed liquid and supplying the mixed liquid to the processing tank 1. The in-line mixing valve 11 has a supply pipe 15 for each chemical liquid.
a to 15d are connected, and on-off valves 16a to 16d for switching the supply of the chemical liquid to the in-line mixing valve 11 and its stop are provided in the supply pipes 15a to 15d. The pure water introducing pipe 12 has an opening / closing valve 14 for switching between supplying pure water to the processing tank 1 and stopping it.
A pressure regulator 17 for adjusting the pressure of the pure water on the secondary side (on the side of the inline mixing valve 11) according to the applied air pressure (pilot pressure) is provided.

【００４１】オゾンガス供給系４は、後述の昇温された
純水（最高沸点以下＝例えば１００°Ｃ以下）よりも高
く、例えば２００°Ｃ以下の範囲内の所定温度にまでオ
ゾンガスを昇温し、この昇温したオゾンガスを処理槽１
に供給するものである。オゾンガス供給系４は、オゾン
ガス供給源からのオゾンガスをヒータ５１に導入するた
めのオゾンガス導入管５２と、このヒータ５１からのオ
ゾンガスや後述する窒素ガス（Ｎ2 ）などを処理槽１に
導入するための共通導入ガス管５３とを備えている。な
お、ヒータ５１は、オゾンガスを昇温するためのもので
ある。The ozone gas supply system 4 raises the ozone gas to a predetermined temperature within a range of, for example, 200 ° C. or lower, which is higher than the temperature of pure water (maximum boiling point or lower = 100 ° C. or lower) described later. , The heated ozone gas is treated in the treatment tank 1
Is to be supplied to. The ozone gas supply system 4 introduces an ozone gas introduction pipe 52 for introducing the ozone gas from the ozone gas supply source into the heater 51, and the ozone gas from the heater 51 and a nitrogen gas (N 2 ) described later into the processing tank 1. And a common introduction gas pipe 53 of The heater 51 is for heating the ozone gas.

【００４２】オゾンガス導入管５２には、オゾンガスの
処理槽１への供給とその停止とを切り換えるための開閉
弁５４が備えられている。また、窒素ガス供給源からの
窒素ガスをヒータ５１に導入するための窒素ガス導入管
５５が、オゾンガス導入管５２におけるヒータ５１と開
閉弁５４との間に分岐接続されている。The ozone gas introduction pipe 52 is provided with an opening / closing valve 54 for switching between supplying ozone gas to the processing tank 1 and stopping the supply thereof. Further, a nitrogen gas introduction pipe 55 for introducing the nitrogen gas from the nitrogen gas supply source into the heater 51 is branched and connected between the heater 51 and the opening / closing valve 54 in the ozone gas introduction pipe 52.

【００４３】窒素ガス導入管５５には、窒素ガスの処理
槽１への供給とその停止とを切り換えるための開閉弁５
６が備えられている。例えば、基板Ｗの表面上のレジス
トを剥離除去しようとする場合は、オゾンガスの温度
を、昇温された純水の温度（最高沸点以下＝例えば１０
０°Ｃ以下）よりも高く、２００°Ｃ以下の範囲内の所
定温度に昇温することが好適である。なお、上述したヒ
ータ５１が本発明における加熱手段に相当する。The nitrogen gas introducing pipe 55 has an opening / closing valve 5 for switching between supplying and stopping the supply of nitrogen gas to the processing tank 1.
6 is provided. For example, when the resist on the surface of the substrate W is to be stripped and removed, the temperature of the ozone gas is raised to the temperature of the pure water (maximum boiling point or lower = for example, 10 or less).
It is preferable to raise the temperature to a predetermined temperature within the range of 200 ° C or lower and higher than 0 ° C or lower). The heater 51 described above corresponds to the heating means in the present invention.

【００４４】処理槽１は、図１〜図３に示すように、槽
内が空洞である円筒状に形成されたものであり、複数枚
の基板Ｗを起立姿勢にして各基板Ｗ間の間隔を空けた状
態で槽内に収納可能で、なおかつ、液供給系２からの純
水や混合液などがその槽内に供給されるようになってお
り、液供給系２から処理槽１内に供給された純水中に基
板Ｗを接触させて、その接触箇所を純水中から取り出す
ことで、この基板Ｗの表面上に純水による液膜を形成
し、液膜が形成された基板Ｗにオゾンガスを作用させ
て、この基板Ｗに表面処理が施される。As shown in FIGS. 1 to 3, the processing bath 1 is formed in a cylindrical shape having a hollow inside, and a plurality of substrates W are placed in an upright posture and the distance between the substrates W is increased. It can be stored in the tank in the empty state, and the deionized water or the mixed liquid from the liquid supply system 2 is supplied into the tank. By bringing the substrate W into contact with the supplied pure water and taking out the contact portion from the pure water, a liquid film of pure water is formed on the surface of the substrate W, and the substrate W on which the liquid film is formed is formed. Ozone gas is caused to act on the substrate W to perform surface treatment on the substrate W.

【００４５】処理槽１の底部には、図１〜図３に示すよ
うに、液供給系２の共通導入管１３に連通された液注入
管２１が取り付けられている。液注入管２１は、内部が
空洞である円筒形状のものであり、その両端部は閉塞さ
れており、円弧状の側面に多数の液噴出孔２２が並設さ
れており、これらの液噴出孔２２が並設されている箇所
とは別の側面に液注入孔２３が形成されており、この液
注入孔２３から導入される処理液としての純水や、ある
いは純水に所定の薬液を混合させた混合液が各液噴出孔
２２から処理槽１内へ噴出される。各液噴出孔２２が処
理槽１内に臨むように液注入管２１は処理槽１に取り付
けられ、液注入管２１の各液噴出孔２２から処理槽１内
に純水などが供給される。As shown in FIGS. 1 to 3, a liquid injection pipe 21 communicating with a common introduction pipe 13 of the liquid supply system 2 is attached to the bottom of the processing tank 1. The liquid injection pipe 21 has a cylindrical shape with a hollow inside, both ends thereof are closed, and a large number of liquid ejection holes 22 are arranged in parallel on the arcuate side surface. A liquid injection hole 23 is formed on a side surface different from the side where the 22 are arranged side by side, and pure water as a processing liquid introduced from the liquid injection hole 23 or a predetermined chemical liquid is mixed with the pure water. The mixed liquid thus made is jetted from the liquid jet holes 22 into the processing tank 1. The liquid injection pipe 21 is attached to the processing bath 1 so that the liquid ejection holes 22 face the processing bath 1, and pure water or the like is supplied into the processing bath 1 from the liquid ejection holes 22 of the liquid injection pipe 21.

【００４６】処理槽１の側部には、図１に示すように、
処理槽１の底部の液注入管２１から槽内に供給された純
水など（純水のみ、純水にオゾンガスが溶解した後述す
るオゾン水、あるいは、混合液などがある）を処理槽１
内に所定量だけ収容するように、処理槽１内に供給され
た余分な純水などを処理槽１外に排出させるための処理
液排出口２４が備えられている。この処理液排出口２４
は、例えば、処理槽１の内部に起立姿勢で収納されて周
方向（図１に矢印で示す方向ａ）に回転可能状態である
基板Ｗの中心付近あるいはそれよりやや上方位置に純水
などの液面が位置するように、処理槽１の側部に配置さ
れている。この処理液排出口２４には、第１排出管２５
が接続されている。As shown in FIG. 1, on the side of the processing tank 1,
Pure water or the like (only pure water, ozone water described later in which ozone gas is dissolved in pure water, or a mixed solution) is supplied from the liquid injection pipe 21 at the bottom of the processing tank 1 to the processing tank 1.
A treatment liquid discharge port 24 for discharging the extra pure water or the like supplied into the treatment tank 1 to the outside of the treatment tank 1 is provided so as to accommodate a predetermined amount therein. This processing liquid outlet 24
Is, for example, pure water or the like near the center of the substrate W that is housed in the processing tank 1 in an upright posture and is rotatable in the circumferential direction (direction a shown by the arrow in FIG. 1) or slightly above it. It is arranged on the side of the processing tank 1 so that the liquid surface is located. The processing liquid discharge port 24 has a first discharge pipe 25.
Are connected.

【００４７】排液系３は、処理槽１からの余分の純水な
どを排出するための第１排出管２５の他に、処理槽１内
に供給された純水などを全て排出するための第２排出管
２６を備えている。この第２排出管２６には、処理槽１
内の純水などの排出とその停止とを切り換えるための開
閉弁２７が備えられている。The drainage system 3 is for discharging all the pure water supplied into the processing tank 1 in addition to the first discharge pipe 25 for discharging the extra pure water and the like from the processing tank 1. The second discharge pipe 26 is provided. In the second discharge pipe 26, the processing tank 1
An opening / closing valve 27 is provided for switching between discharging pure water and the like inside and stopping it.

【００４８】さらに、処理槽１の上部には、図１〜図３
に示すように、オゾンガス供給系４の共通導入ガス管５
３に連通されたガス注入管５７が取り付けられている。
ガス注入管５７は、内部が空洞である円筒形状のもので
あり、その両端部は閉塞されており、円弧状の側面に多
数のガス噴出孔５８が並設されており、これらのガス噴
出孔５８が並設されている箇所とは別の側面にガス導入
孔５９が形成されており、このガス導入孔５９から導入
されるオゾンガスやあるいは窒素ガスがガス噴出孔５８
から噴出される。各ガス噴出孔５８が処理槽１内に臨む
ようにガス注入管５７は処理槽１に取り付けられ、ガス
注入管５７の各ガス噴出孔５８から処理槽１内にオゾン
ガスなどが供給される。Further, the upper part of the processing tank 1 is shown in FIGS.
As shown in, the common introduction gas pipe 5 of the ozone gas supply system 4
3 is attached to the gas injection pipe 57.
The gas injection pipe 57 has a cylindrical shape with a hollow inside, both ends thereof are closed, and a large number of gas ejection holes 58 are arranged in parallel on an arcuate side surface. A gas introduction hole 59 is formed on a side surface different from the side where the 58 are provided side by side, and ozone gas or nitrogen gas introduced from the gas introduction hole 59 is used as the gas ejection hole 58.
Erupted from. The gas injection pipe 57 is attached to the processing tank 1 so that each gas ejection hole 58 faces the processing tank 1, and ozone gas or the like is supplied into the processing tank 1 from each gas ejection hole 58 of the gas injection pipe 57.

【００４９】排気系５は、処理槽１内のオゾンガスや窒
素ガスを排出するためのガス排出管６１を備えている。
このガス排出管６１には、処理槽１内のオゾンガスや窒
素ガスの排出とその停止とを切り換えるための開閉弁６
２が備えられている。The exhaust system 5 includes a gas exhaust pipe 61 for exhausting ozone gas and nitrogen gas in the processing tank 1.
The gas discharge pipe 61 has an opening / closing valve 6 for switching between discharging ozone gas and nitrogen gas in the processing tank 1 and stopping the discharge.
2 is provided.

【００５０】また、処理槽１には、複数枚の基板Ｗを起
立姿勢にして各基板Ｗ間の間隔を空けて並べた状態で処
理槽１内に収納保持し（図２参照）、なおかつ、保持さ
れたこれらの基板Ｗをこの基板Ｗの周方向（図１に矢印
で示す方向ａ）に回転させる基板回転保持機構３１が備
えられている。Further, in the processing tank 1, a plurality of substrates W are held in the processing tank 1 in a standing posture and arranged side by side with an interval between the substrates W (see FIG. 2), and A substrate rotation holding mechanism 31 for rotating the held substrates W in the circumferential direction of the substrate W (direction a indicated by an arrow in FIG. 1) is provided.

【００５１】基板回転保持機構３１は、図３に示すよう
に、複数枚の基板Ｗを起立姿勢で各基板Ｗ間の間隔を空
けて並べた状態で保持するための回転ドラム３２を備え
ている。この回転ドラム３２は、水平方向（円筒形状の
処理槽１の中心軸方向）に向く回転軸３３により回転可
能に支持されている。回転ドラム３２は、一対の回転板
３４が複数本（例えば、３本）の保持桿３５により連結
されている。また、複数本の保持桿３５のうちの１つの
保持桿３５ａが基板Ｗの処理槽１内への搬入出のために
回動可能となっている。As shown in FIG. 3, the substrate rotation holding mechanism 31 is provided with a rotating drum 32 for holding a plurality of substrates W in a standing posture while arranging the substrates W with a space between them. . The rotary drum 32 is rotatably supported by a rotary shaft 33 oriented in the horizontal direction (the central axis direction of the cylindrical processing tank 1). The rotary drum 32 has a pair of rotary plates 34 connected by a plurality of (for example, three) holding rods 35. Further, one of the plurality of holding rods 35 is capable of rotating so that one of the holding rods 35 a can carry the substrate W into and out of the processing bath 1.

【００５２】処理槽１の側方には、ベルト３６を介して
回転軸３３を回転させるためのモータ３７と、保持桿３
５ａを回動させる操作軸３８を駆動する保持駆動源３９
とを備えた回転駆動部４０が設けられている。回転軸３
３は、対向する処理槽１の側壁に設けられた軸受４１に
より回転自在に支持されている。軸受４１による回転軸
３３の支持箇所は、ラビリンスパッキン４２により、液
及びガスの漏れがないように処理槽１内部と外部とが完
全に隔離されている。なお、回転ドラム３２は、モータ
３７により、例えば３０ｒｐｍ程度で回転する。すなわ
ち、複数枚の基板Ｗは、その周方向（図１に矢印で示す
方向ａ）に３０ｒｐｍ程度で回転することになる。な
お、上述した基板回転保持機構３１が本発明における基
板回転手段に相当し、回転ドラム３２が本発明における
保持手段に相当する。On the side of the processing tank 1, a motor 37 for rotating the rotating shaft 33 via a belt 36 and a holding rod 3 are provided.
Holding drive source 39 for driving operation shaft 38 for rotating 5a
A rotary drive unit 40 including a and is provided. Rotating shaft 3
The bearing 3 is rotatably supported by a bearing 41 provided on the side wall of the processing bath 1 facing the bearing 3. At the location where the rotating shaft 33 is supported by the bearing 41, the inside and outside of the processing tank 1 are completely separated by the labyrinth packing 42 so that liquid and gas do not leak. The rotary drum 32 is rotated by the motor 37 at, for example, about 30 rpm. That is, the plurality of substrates W rotate in the circumferential direction (direction a shown by an arrow in FIG. 1) at about 30 rpm. The substrate rotation holding mechanism 31 described above corresponds to the substrate rotating means in the present invention, and the rotating drum 32 corresponds to the holding means in the present invention.

【００５３】さらに、回転ドラム３２の各保持桿３５，
３５ａには、図３，４に示すように、多数の貫通孔６が
形成された羽根部材としてのフィン７が備えられてい
る。このフィン７は、例えば、多数の貫通孔６が形成さ
れた平板形状の板部材のものであり、回転ドラム３２の
外側に向かって放射状に垂設されている。基板回転保持
機構３１は、基板Ｗを方向ａに回転させるように回転ド
ラム３２を回転駆動することに伴ってフィン７を同一の
方向ａに回転させて、このフィン７の回転作用によって
処理槽１内の純水中にオゾンを溶解させる。なお、この
フィン７は、回転作用によって純水にオゾンを溶解させ
るものであれば種々の形態のものを採用できる。例え
ば、このフィン７の形状は平板に限定されるものではな
く曲板や種々の形状のものを採用したり、フィン７の多
数の貫通孔６として網の目ような格子状の隙間の部分を
採用したり、フィン７を回転ドラム３２の回転軸周りの
方向に傾斜させて各保持桿３５，３５ａに取り付けても
良い。Further, each holding rod 35 of the rotary drum 32,
35a, as shown in FIGS. 3 and 4, fins 7 are provided as blade members in which a large number of through holes 6 are formed. The fins 7 are, for example, plate-shaped plate members in which a large number of through holes 6 are formed, and are hung radially outward of the rotary drum 32. The substrate rotation holding mechanism 31 rotates the fins 7 in the same direction a as the rotary drum 32 is rotationally driven so as to rotate the substrate W in the direction a, and the processing action of the fins 7 causes the processing tank 1 to rotate. Dissolve ozone in the pure water inside. It should be noted that the fins 7 may be of various forms as long as they dissolve ozone in pure water by the rotating action. For example, the shape of the fins 7 is not limited to a flat plate, and a curved plate or various shapes may be adopted, or a large number of through holes 6 of the fins 7 may be formed in a grid-like gap portion like a mesh. Alternatively, the fins 7 may be attached to the holding rods 35, 35a by inclining the fins 7 around the rotation axis of the rotary drum 32.

【００５４】さらに、この基板処理装置には、図１に示
すように、循環系７１が備えられている。この循環系７
１は、処理槽１から排出された処理液（純水のみ、処理
槽１内でのオゾンガス処理によってこのオゾンガスが純
水に溶解して生成されるオゾン水）あるいは混合液を、
再び処理槽１内に戻して基板Ｗのレジスト剥離処理に再
利用するための流路であり、一端が第１排出管２５に接
続されて他端が共通導入管１３に接続された処理液再供
給管７２を備えている。Further, as shown in FIG. 1, this substrate processing apparatus is provided with a circulation system 71. This circulatory system 7
Reference numeral 1 denotes a treatment liquid (only pure water, ozone water generated by dissolving ozone gas in pure water by ozone gas treatment in the treatment tank 1) or a mixed liquid discharged from the treatment tank 1.
It is a flow path for returning to the inside of the processing tank 1 again and reused in the resist stripping processing of the substrate W, and the processing liquid re-use having one end connected to the first discharge pipe 25 and the other end connected to the common introduction pipe 13. A supply pipe 72 is provided.

【００５５】この処理液再供給管７２は、処理槽１から
排出された処理液（純水あるいはオゾン水）を再び処理
槽１内に戻すためのポンプ７３と、処理槽１からの処理
液を所定の温度（最高沸点以下の温度＝例えば、１００
°Ｃ以下）に昇温する例えばインラインヒータのような
処理液昇温部７４と、処理槽１から排出された処理液中
の不純物を濾過するためのフィルタ７５と、昇温されて
不純物除去された処理液の処理槽１への供給とその停止
とを切り換えるための開閉弁７６とを備えている。な
お、上述した循環系７１が本発明における循環手段に相
当し、上述した処理液昇温部７４が本発明における処理
液昇温手段に相当する。The processing liquid re-supply pipe 72 is provided with a pump 73 for returning the processing liquid (pure water or ozone water) discharged from the processing tank 1 into the processing tank 1 again, and the processing liquid from the processing tank 1. Predetermined temperature (temperature below maximum boiling point = 100, for example
Process liquid temperature raising part 74 such as an in-line heater, which raises the temperature to (° C. or below), a filter 75 for filtering impurities in the process liquid discharged from the processing bath 1, and a temperature rise to remove impurities. An opening / closing valve 76 for switching between supplying the processing liquid to the processing tank 1 and stopping the processing liquid is provided. The circulation system 71 described above corresponds to the circulation means in the present invention, and the processing liquid temperature raising unit 74 described above corresponds to the processing liquid temperature raising means in the present invention.

【００５６】このように、図１，３に示すように、処理
槽１は、純水が供給されて所定量の純水を収容してお
り、基板回転保持機構３１は、複数枚の基板Ｗを起立姿
勢で保持する回転ドラム３２を、周方向（図１に矢印で
示す方向ａ）に回転させることで、処理槽１内の純水中
に基板Ｗの一部を浸漬させた状態で基板Ｗを回転させ、
基板Ｗの純水浸漬箇所を変更させて、基板Ｗの全面にわ
たって純水の液膜を形成する。このことから、処理槽１
と液供給系２と基板回転保持機構３１とにおける、基板
Ｗを処理槽１内の純水中に接触させてから取り出すこと
で基板Ｗの表面上に純水による液膜を形成するための機
能構成部分が、本発明における基板液膜形成手段に相当
する。また、オゾンガス供給系４は、昇温された純水
（最高沸点以下＝例えば１００°Ｃ以下）よりも高く、
例えば２００°Ｃ以下の範囲内の所定温度にまでオゾン
ガスを昇温して、この昇温したオゾンガスを処理槽１に
供給し、処理槽１は純水の液膜が形成された基板Ｗに、
上記の昇温したオゾンガスを作用させることから、処理
槽１とオゾンガス供給系４とが本発明における基板表面
処理手段に相当する。なお、上述した処理槽１と液供給
系２とオゾンガス供給系４と基板回転保持機構３１とを
含めたものが本発明における処理部に相当する。As described above, as shown in FIGS. 1 and 3, the processing bath 1 is supplied with pure water and stores a predetermined amount of pure water, and the substrate rotation holding mechanism 31 is provided with a plurality of substrates W. The rotating drum 32 that holds the substrate in an upright posture is rotated in the circumferential direction (direction a indicated by the arrow in FIG. 1), so that the substrate W is partially immersed in the pure water in the processing tank 1. Rotate W,
A pure water liquid film is formed on the entire surface of the substrate W by changing the pure water immersion portion of the substrate W. From this, processing tank 1
And a function of forming a liquid film of pure water on the surface of the substrate W by bringing the substrate W into contact with the pure water in the processing tank 1 and then taking it out in the liquid supply system 2 and the substrate rotation holding mechanism 31. The constituent portion corresponds to the substrate liquid film forming means in the present invention. In addition, the ozone gas supply system 4 is higher than the temperature of pure water (maximum boiling point or lower = 100 ° C or lower),
For example, the ozone gas is heated to a predetermined temperature within a range of 200 ° C. or less, and the heated ozone gas is supplied to the processing tank 1, and the processing tank 1 applies the substrate W on which the liquid film of pure water is formed,
The treatment tank 1 and the ozone gas supply system 4 correspond to the substrate surface treatment means in the present invention because the ozone gas whose temperature has been raised acts. The processing tank 1, the liquid supply system 2, the ozone gas supply system 4, and the substrate rotation holding mechanism 31 described above correspond to the processing unit in the present invention.

【００５７】また、上述した液供給系２のうちの純水導
入管１２や開閉弁１４などの純水供給ラインと、共用に
係る共通導入管１３や処理槽１などと、排液系３とによ
って、オゾンガスや混合液などにより処理された基板Ｗ
に対して純水（洗浄液）を供給して基板Ｗの表面を水洗
（洗浄）処理するための洗浄処理部が構成されている。Further, a pure water supply line such as the pure water supply pipe 12 and the opening / closing valve 14 in the liquid supply system 2 described above, a common supply pipe 13 and a processing tank 1 for common use, and a drainage system 3 are provided. Substrate W treated by ozone gas or a mixed solution by
A cleaning processing unit for supplying pure water (cleaning liquid) to the surface of the substrate W for cleaning (cleaning) is configured.

【００５８】次に上記のように構成された基板処理装置
の基板処理動作について、図５のタイムチャートを参照
しながら説明する。Next, the substrate processing operation of the substrate processing apparatus configured as described above will be described with reference to the time chart of FIG.

【００５９】まず、処理槽１のカバー（図示省略）を開
けた状態にして、オゾンガスによるレジスト剥離処理を
しようとする複数の基板Ｗを、処理槽１内にセットする
（図５に示す時刻ｔ１でセット完了）。具体的には、図
３に示すように、保持駆動源３９は、操作軸３８を駆動
し、この操作軸３８の駆動により１つの保持桿３５ａが
回動されて退避され、基板Ｗが処理槽１内へ搬入され
る。例えば基板搬入ロボット（図示省略）などにより、
起立姿勢で各基板Ｗ間の間隔を空けた状態にある複数の
基板Ｗを、処理槽１の内部の回転ドラム３２に収容す
る。回転ドラム３２に複数の基板Ｗが収容保持される
と、処理槽１のカバー（図示省略）を閉じた状態にする
（図５に示す時刻ｔ２でカバー閉完了）。First, with the cover (not shown) of the processing tank 1 opened, a plurality of substrates W to be subjected to resist stripping processing by ozone gas are set in the processing tank 1 (time t1 shown in FIG. 5). Set complete with). Specifically, as shown in FIG. 3, the holding drive source 39 drives the operating shaft 38, and by driving the operating shaft 38, one holding rod 35a is rotated and retracted, and the substrate W is processed. It is carried into 1. For example, by a substrate loading robot (not shown),
A plurality of substrates W in a standing posture with a space between each substrate W are accommodated in the rotating drum 32 inside the processing bath 1. When the plurality of substrates W are accommodated and held in the rotating drum 32, the cover (not shown) of the processing tank 1 is closed (the cover closing is completed at time t2 shown in FIG. 5).

【００６０】次に、時刻ｔ２にて基板Ｗの回転を開始す
る。具体的には、図３に示すように、モータ３７を回転
させることで回転軸３３が回転し、回転軸３３の回転に
伴って回転ドラム３２が回転する。回転ドラム３２は、
例えば３０ｒｐｍ程度で回転する。すなわち、複数枚の
基板Ｗは、その周方向（図１に矢印で示す方向ａ）に３
０ｒｐｍ程度で回転することになる。また、回転ドラム
３２の回転と同時に、すなわち、時刻ｔ２にて、液供給
系２による処理槽１内への純水の供給も開始される。具
体的には、純水導入管１２の開閉弁１４を開いて、純水
供給源からの純水をインラインミキシングバルブ１１に
供給して、共通導入管１３と液注入管２１と介して処理
槽１内に供給される。なおこの時点における、処理槽１
内に供給される純水の温度は、例えば、常温（２５°Ｃ
程度）である。Next, at time t2, the rotation of the substrate W is started. Specifically, as shown in FIG. 3, the rotating shaft 33 rotates by rotating the motor 37, and the rotating drum 32 rotates as the rotating shaft 33 rotates. The rotary drum 32 is
For example, it rotates at about 30 rpm. That is, the plurality of substrates W are arranged in the circumferential direction (direction a indicated by an arrow in FIG. 1) in the circumferential direction.
It will rotate at about 0 rpm. At the same time as the rotation of the rotary drum 32, that is, at time t2, the supply of pure water into the processing tank 1 by the liquid supply system 2 is also started. Specifically, the open / close valve 14 of the pure water introduction pipe 12 is opened, pure water from the pure water supply source is supplied to the in-line mixing valve 11, and the treatment tank is provided via the common introduction pipe 13 and the liquid injection pipe 21. Supplied within 1. At this point, the processing tank 1
The temperature of the pure water supplied to the inside is, for example, room temperature (25 ° C).
Degree).

【００６１】次に、処理槽１内に所定量の純水が供給さ
れ、処理槽１内に供給された余分な純水が処理液排出口
２４から槽外に排出される。そして、図５に示すように
純水定量レベルに到達する（時刻ｔ３）と、処理液再供
給管７２の開閉弁７６を開き、循環系７１のポンプ７３
を動作させて、処理槽１の処理液排出口２４から排出さ
れた純水を、処理液再供給管７２を介して再び処理槽１
に供給させるように循環させるとともに、処理液昇温部
７４による純水の昇温を開始する。処理液昇温部７４に
よる昇温により、純水の温度は、常温（例えば２５°
Ｃ）よりも高く、最高沸点以下（例えば１００°Ｃ以
下）の範囲内の所定温度（例えば１００°Ｃを僅かに下
回る程度）にまで昇温される。Next, a predetermined amount of pure water is supplied into the processing tank 1, and the extra pure water supplied into the processing tank 1 is discharged from the processing liquid discharge port 24 to the outside of the tank. Then, as shown in FIG. 5, when the quantitative level of pure water is reached (time t3), the open / close valve 76 of the processing liquid resupply pipe 72 is opened, and the pump 73 of the circulation system 71 is opened.
The pure water discharged from the processing liquid discharge port 24 of the processing tank 1 again through the processing liquid resupply pipe 72.
And the temperature of pure water is raised by the treatment liquid temperature raising unit 74. The temperature of pure water is raised to room temperature (for example, 25 ° C.) by the temperature rise by the treatment liquid temperature raising unit 74.
The temperature is raised to a predetermined temperature (for example, slightly below 100 ° C.) higher than C) and within the range of the maximum boiling point or lower (for example, 100 ° C. or lower).

【００６２】さらに、この純水定量レベルに到達時（図
５に示す時刻ｔ３）には、オゾンガス供給系４による、
純水よりも高い所定温度に昇温させたオゾンガスの処理
槽１内への供給も開始される。ヒータ５１による昇温に
より、オゾンガスは、昇温された純水（例えば１００°
Ｃを僅かに下回る程度）よりも高く、例えば２００°Ｃ
以下の範囲内の所定温度にまで昇温される。なお、上述
の純水定量レベルへの到達および基板Ｗの回転によっ
て、基板Ｗの表面上における液面から取り出された箇所
には純水による液膜が形成されており、このように液膜
が形成された基板Ｗに対して、オゾンガスによる基板Ｗ
のレジスト剥離処理が開始されることになる。Further, when the pure water quantitative level is reached (time t3 shown in FIG. 5), the ozone gas supply system 4 causes
The supply of ozone gas heated to a predetermined temperature higher than that of pure water into the processing tank 1 is also started. The ozone gas is heated by the heater 51 to raise the temperature of pure water (for example, 100 ° C.).
(Slightly below C), for example, 200 ° C
The temperature is raised to a predetermined temperature within the following range. It should be noted that a liquid film of pure water is formed on the surface of the substrate W taken out of the liquid surface due to the reaching of the pure water quantitative level and the rotation of the substrate W as described above. Substrate W formed by ozone gas with respect to the formed substrate W
The resist stripping process is started.

【００６３】すなわち、基板Ｗの表面上に純水を接触さ
せて純水による液膜を形成する第１工程と、この第１工
程により表面上に液膜が形成された基板Ｗに、純水より
も高い所定温度のオゾンガスを作用させてこの基板Ｗを
表面処理する第２工程とが同時に行われることになる。
具体的には、図１，図３に示すように、基板Ｗは、その
下半分が液面下にあって、この液中に下半分が浸漬され
た状態で方向ａに回転しており、基板Ｗの液面下の浸漬
箇所が基板Ｗの回転によって液中から取り出されること
になり、この基板Ｗの上半分には液膜が形成される第１
工程が行われており、さらに、この第１工程が行われて
いる状態でオゾンガスが供給されているので、この液膜
が形成された基板Ｗの上半分に対して、純水よりも高い
所定温度のオゾンガスを作用させてこの基板Ｗを表面処
理する第２工程が行われている。That is, the first step of contacting pure water on the surface of the substrate W to form a liquid film of pure water, and the substrate W having the liquid film formed on the surface thereof by the first step, The second step of subjecting the substrate W to the surface treatment by causing ozone gas of a predetermined temperature higher than that to be carried out simultaneously.
Specifically, as shown in FIGS. 1 and 3, the lower half of the substrate W is below the liquid surface, and the lower half is immersed in the liquid and is rotating in the direction a. The immersion portion below the liquid surface of the substrate W is taken out of the liquid by the rotation of the substrate W, and a liquid film is formed on the upper half of the substrate W.
Since the ozone gas is supplied while the process is being performed and the first step is being performed, the upper half of the substrate W on which the liquid film is formed is higher than pure water by a predetermined amount. The second step of subjecting the substrate W to the surface treatment by applying ozone gas at a temperature is performed.

【００６４】ここで、液膜が形成された基板Ｗの上半分
に対してオゾンガスを作用させることについて、図６を
用いて説明する。図６（ａ）は基板Ｗの液面から出た直
後のその箇所の表面形状を示す模式図であり、図６
（ｂ）は基板Ｗの回転によって（ａ）に示した箇所が液
面から離れた時点でのその箇所の表面形状を示す模式図
であり、図６（ｃ）は（ａ）に示した箇所が液面下に入
る直前のその箇所の表面形状を示す模式図である。Here, the action of ozone gas on the upper half of the substrate W on which the liquid film is formed will be described with reference to FIG. FIG. 6A is a schematic diagram showing the surface shape of the portion immediately after coming out of the liquid surface of the substrate W.
6B is a schematic diagram showing the surface shape of the portion shown in FIG. 6A when the substrate W is rotated away from the liquid surface by the rotation of the substrate W, and FIG. 6C is the portion shown in FIG. FIG. 3 is a schematic diagram showing the surface shape of a portion immediately before the liquid enters below the liquid surface.

【００６５】図６（ａ）に示すように、基板Ｗの液面か
ら出た直後のその箇所の表面形状は、例えば、基板Ｗの
表面上のレジストＲ上に、処理液（純水あるいは後述の
オゾン水）からなる液膜ＬＦが形成されている。そし
て、この液膜ＬＦが形成された基板Ｗに対して、処理液
よりも高い所定温度のオゾンガスを供給することで、蒸
発により液膜ＬＦを薄くさせながらこの液膜ＬＦ中にオ
ゾンガスを溶解させることができ、レジストＲとの反応
が起こる界面へのオゾンガスの移動が容易となり効率的
に反応させることができる。例えば、図６（ｂ）に示す
ように、基板Ｗの回転によって図６（ａ）に示した箇所
が液面から離れた時点でのその箇所の表面形状は、次の
ようになっている。図６（ｂ）に示した液膜ＬＦは、図
６（ａ）の液膜ＬＦよりも薄くなっており、図６（ｂ）
に示したレジストＲは、液膜ＬＦの溶解したオゾンによ
って剥離されて、図６（ａ）のレジストＲよりも薄くな
っている。As shown in FIG. 6A, the surface shape of the portion immediately after coming out of the liquid surface of the substrate W is, for example, a resist solution R on the surface of the substrate W on which a treatment liquid (pure water or later-described Liquid film LF made of ozone water) is formed. Then, the ozone gas having a predetermined temperature higher than that of the processing liquid is supplied to the substrate W on which the liquid film LF is formed, so that the ozone gas is dissolved in the liquid film LF while thinning the liquid film LF by evaporation. Therefore, the ozone gas can be easily moved to the interface where the reaction with the resist R occurs, and the reaction can be efficiently performed. For example, as shown in FIG. 6B, the surface shape of the portion shown in FIG. 6A when the substrate W is rotated away from the liquid surface is as follows. The liquid film LF shown in FIG. 6B is thinner than the liquid film LF of FIG. 6A, and the liquid film LF shown in FIG.
The resist R shown in FIG. 6 is peeled off by the dissolved ozone of the liquid film LF, and is thinner than the resist R of FIG.

【００６６】さらに、図６（ｃ）に示すように、図６
（ａ）に示した箇所が液面下に入る直前のその箇所の表
面形状は、次のようになっている。図６（ｃ）に示した
液膜ＬＦは、図６（ｂ）の液膜ＬＦよりもさらに薄くな
っており、図６（ｃ）に示したレジストＲは、液膜ＬＦ
の溶解したオゾンによってさらに剥離されて、図６
（ｂ）のレジストＲよりもさらに薄くなっている。Further, as shown in FIG.
The surface shape of the portion shown in (a) immediately before entering below the liquid surface is as follows. The liquid film LF shown in FIG. 6C is thinner than the liquid film LF of FIG. 6B, and the resist R shown in FIG.
6 is further stripped by the dissolved ozone of FIG.
It is thinner than the resist R in (b).

【００６７】ところで、オゾンガス供給系４による処理
槽１へのオゾンガスの供給は、基板Ｗの全面にわたって
十分にレジストが剥離処理されるように、基板Ｗの処理
レートに合わせて設定されたオゾンガス供給時間の間だ
け行われる。また、図５に示すように、オゾンガス供給
系４による処理槽１へのオゾンガスの供給が行われてい
る間は、基板Ｗの回転と、処理槽１内への処理液（循環
開始時は純水であるが、その後の時間経過に従ってオゾ
ン水となる）の循環および昇温との両方ともが継続して
行われる。上述したように図３に示した回転ドラム３２
は、処理槽１内の純水中に約半分が浸漬した状態で回転
駆動され、この回転ドラム３２には、多数の貫通孔６を
有するフィン７が備えられている。By the way, the ozone gas supply system 4 supplies the ozone gas to the processing tank 1 in such a manner that the ozone gas supply time is set in accordance with the processing rate of the substrate W so that the resist is sufficiently stripped over the entire surface of the substrate W. Only during the period. Further, as shown in FIG. 5, while the ozone gas is being supplied to the processing tank 1 by the ozone gas supply system 4, the substrate W is rotated, and the processing liquid into the processing tank 1 (at the start of circulation, the processing liquid is pure). Water, which becomes ozone water with the lapse of time thereafter, is both continuously circulated and heated. As described above, the rotary drum 32 shown in FIG.
Is rotatively driven in a state where about half is immersed in pure water in the processing tank 1, and the rotary drum 32 is provided with fins 7 having a large number of through holes 6.

【００６８】回転ドラム３２の回転に伴ってこのフィン
７もこの回転ドラム３２と同一方向（方向ａ）に回転す
ることから、この回転作用によってオゾンガスが積極的
に純水中に溶解させられるようになっている。したがっ
て、循環開始時は、循環系７１により純水が処理槽１に
循環されることになるが、その開始時以降は、処理槽１
内に供給されたオゾンガスを処理槽１内の純水中に積極
的に溶解させてオゾン水を生成するようにしていること
から、循環系７１によりオゾン水が処理槽１に循環され
ることになる。その結果、オゾン水への浸漬中において
もオゾン水中のオゾンとの反応が起こり、基板Ｗがオゾ
ン水に浸漬している箇所もこのオゾン水中のオゾンと反
応させることができ、オゾンによる基板表面処理の反応
速度がさらに向上する。このように、処理槽１内に供給
されるオゾンガスは、基板Ｗの表面上の液膜中および昇
温された純水中にも溶解し、レジストの反応が、液面か
ら引き上げられた基板Ｗの浸漬以外の箇所と、昇温され
た純水中にオゾンガスが溶解されることで生成されたオ
ゾン水中への基板Ｗの浸漬箇所との両方で起こる。Since the fins 7 also rotate in the same direction (direction a) as the rotary drum 32 as the rotary drum 32 rotates, the ozone gas is positively dissolved in the pure water by this rotary action. Has become. Therefore, when the circulation is started, the pure water is circulated to the processing tank 1 by the circulation system 71.
Since the ozone gas supplied into the processing tank 1 is positively dissolved in the pure water in the processing tank 1 to generate the ozone water, the circulation system 71 circulates the ozone water to the processing tank 1. Become. As a result, a reaction with ozone in the ozone water occurs even during the immersion in the ozone water, and the portion of the substrate W immersed in the ozone water can also react with the ozone in the ozone water. The reaction rate of is further improved. As described above, the ozone gas supplied into the processing tank 1 is also dissolved in the liquid film on the surface of the substrate W and in the heated pure water, and the reaction of the resist is the substrate W pulled from the liquid surface. Of the substrate W and the location of immersion of the substrate W in ozone water generated by dissolving ozone gas in heated pure water.

【００６９】また、昇温されたオゾン水を処理槽１に供
給することで、この昇温されたオゾン水を基板Ｗに接触
させて基板Ｗの温度を昇温させることができ、基板Ｗの
昇温によりオゾンによる基板表面処理の反応速度をさら
に向上できる。By supplying the heated ozone water to the processing tank 1, the heated ozone water can be brought into contact with the substrate W to raise the temperature of the substrate W. By raising the temperature, the reaction rate of the substrate surface treatment with ozone can be further improved.

【００７０】オゾンガス供給系４によるオゾンガス供給
が上述の設定されたオゾンガス供給時間の間だけ行われ
ると、オゾンガス供給系４によるオゾンガス供給を停止
し（図５に示す時刻ｔ４）、処理槽１内のオゾンガスお
よび処理液（オゾン水）を槽外に排出するために、処理
槽１内への窒素ガスの供給を開始するとともに、処理槽
１内への純水の供給を開始して純水による洗浄（水洗）
処理を行う。具体的には、オゾンガス導入管５２の開閉
弁５４を閉じてオゾンガス供給源からのオゾンガスの処
理槽１への供給を停止し、窒素ガス導入管５５の開閉弁
５４を開いて、窒素ガス供給源からの窒素ガスを処理槽
１内に導入して、この処理槽１内からオゾンガスを排出
する。なお、基板Ｗの回転は継続して行われている。When the ozone gas supply by the ozone gas supply system 4 is carried out only during the set ozone gas supply time, the ozone gas supply by the ozone gas supply system 4 is stopped (time t4 shown in FIG. 5), and the inside of the processing tank 1 is stopped. In order to discharge the ozone gas and the processing liquid (ozone water) out of the tank, the supply of nitrogen gas into the processing tank 1 is started, and the supply of pure water into the processing tank 1 is started to wash with pure water. (Washing with water)
Perform processing. Specifically, the opening / closing valve 54 of the ozone gas introduction pipe 52 is closed to stop the supply of ozone gas from the ozone gas supply source to the processing tank 1, and the opening / closing valve 54 of the nitrogen gas introduction pipe 55 is opened to supply the nitrogen gas supply source. The nitrogen gas from No. 1 is introduced into the processing tank 1, and the ozone gas is discharged from the inside of the processing tank 1. The rotation of the substrate W is continuously performed.

【００７１】なおこのとき、ヒータ５１によって昇温さ
せた窒素ガスを処理槽１内に供給するようにしても良い
が、ここでは、例えばヒータ５１の昇温動作を停止させ
ており、処理槽１への窒素ガスの昇温は行わないことと
している。この処理槽１内への窒素ガスの供給ととも
に、以下のような純水供給を行う。循環系７１による循
環を停止させ、純水導入管１２の開閉弁１４を開いてイ
ンラインミキシングバルブ１１への純水の供給を開始
し、第２排出管２６の開閉弁２７を開いて処理槽１内の
オゾン水を処理槽１外に廃液しながら処理槽１内に純水
を供給することで、処理槽１内をオゾン水から純水に置
換して、基板Ｗの表面を純水によって水洗処理する。At this time, the nitrogen gas whose temperature has been raised by the heater 51 may be supplied into the processing tank 1, but here, for example, the heating operation of the heater 51 is stopped and the processing tank 1 is stopped. The temperature of the nitrogen gas is not raised. In addition to the supply of nitrogen gas into the processing tank 1, the following pure water is supplied. The circulation by the circulation system 71 is stopped, the open / close valve 14 of the pure water introduction pipe 12 is opened to start the supply of pure water to the in-line mixing valve 11, and the open / close valve 27 of the second discharge pipe 26 is opened to open the treatment tank 1 By supplying pure water into the treatment tank 1 while draining the ozone water in the treatment tank 1 out of the treatment tank 1, the inside of the treatment tank 1 is replaced with pure water, and the surface of the substrate W is washed with pure water. To process.

【００７２】そして、基板Ｗの洗浄が終了すると、基板
Ｗの回転を停止し（図５に示す時刻ｔ５）、純水導入管
１２の開閉弁１４を閉じて処理槽１内への純水の供給を
停止し、開閉弁２７は開かれたままなので処理槽１内の
純水は廃液される。純水の廃液の際には、基板Ｗの回転
を停止させているので、純水が四方に飛散することがな
く、廃液が円滑に行われる。処理槽１内の純水の廃液が
終了すると、処理槽１のカバー（図示省略）を開けた状
態にして、処理済みの複数の基板Ｗを処理槽１内から搬
出して（図５に示す時刻ｔ６にて搬出完了）、次工程に
搬送する。具体的には、図３に示した保持駆動源３９
は、操作軸３８を駆動し、この操作軸３８の駆動により
１つの保持桿３５ａが回動されて退避され、基板Ｗの処
理槽１からの搬出が可能になる。基板搬出ロボット（図
示省略）により、処理済みの複数の基板Ｗを、起立姿勢
で各基板Ｗ間の間隔を空けた状態で、処理槽１の内部の
回転ドラム３２から搬出して、次工程に搬送する。な
お、上記の洗浄処理後であって基板Ｗの搬出の前に、純
水の供給を停止して純水を槽外に排出した状態で、処理
槽１内の回転中の基板Ｗに対して窒素ガスのみを供給す
るようにして、基板Ｗをスピン乾燥させるようにしても
良い。When the cleaning of the substrate W is completed, the rotation of the substrate W is stopped (time t5 shown in FIG. 5), the open / close valve 14 of the pure water introducing pipe 12 is closed, and the pure water in the processing tank 1 is removed. Since the supply is stopped and the on-off valve 27 remains open, the pure water in the processing tank 1 is drained. Since the rotation of the substrate W is stopped during the waste liquid of pure water, the pure water does not scatter in all directions and the waste liquid is smoothly discharged. When the waste liquid of pure water in the processing bath 1 is completed, the cover (not shown) of the processing bath 1 is opened and the plurality of processed substrates W are carried out from the processing bath 1 (shown in FIG. 5). At time t6, unloading is completed), and the process is carried to the next step. Specifically, the holding drive source 39 shown in FIG.
Drives the operation shaft 38, and by driving the operation shaft 38, one holding rod 35a is rotated and retracted, and the substrate W can be carried out from the processing bath 1. A substrate unloading robot (not shown) unloads the plurality of processed substrates W from the rotary drum 32 inside the processing tank 1 in a standing posture with a space between the substrates W, and carries out the next process. Transport. After the cleaning process and before the substrate W is unloaded, the supply of pure water is stopped and the pure water is discharged to the outside of the bath. The substrate W may be spin-dried by supplying only the nitrogen gas.

【００７３】以上説明した第１実施例に係る基板処理装
置によれば、基板Ｗの表面上に処理液（純水あるいはオ
ゾン水）を接触させて液膜を形成する基板液膜形成手段
（処理槽１の一部と液供給系２と基板回転保持機構３１
とを備える）と、この基板液膜形成手段により表面上に
液膜が形成された基板Ｗに、処理液よりも高い所定温度
のオゾンガスを作用させてこの基板Ｗを表面処理する基
板表面処理手段（処理槽１の一部とオゾンガス供給系４
とを備える）とを備えているので、第１，第２工程を行
うことができ、基板Ｗの表面上に純水あるいはオゾン水
による液膜を形成することで、この液膜の内部で基板Ｗ
の表面の極めて薄い層流の部分である、基板Ｗの表面の
レジストなどの有機物との反応を支配する境膜を薄くす
る制御ができ、処理液の温度よりも高い所定温度に昇温
させたオゾンガスをこの基板Ｗに作用させていること
で、基板Ｗの表面の境膜へのオゾンの溶解を促進するこ
とができ、溶存オゾン濃度を高めることができる。According to the substrate processing apparatus in the first embodiment described above, the substrate liquid film forming means (process for forming a liquid film by contacting the processing liquid (pure water or ozone water) on the surface of the substrate W) Part of bath 1, liquid supply system 2, substrate rotation holding mechanism 31
And a substrate surface treatment means for subjecting the substrate W having a liquid film formed on its surface by the substrate liquid film forming means to an ozone gas having a predetermined temperature higher than that of the treatment liquid to thereby surface-treat the substrate W. (Part of the processing tank 1 and ozone gas supply system 4
And (1) and (2) are provided, the first and second steps can be performed, and by forming a liquid film of pure water or ozone water on the surface of the substrate W, the substrate can be formed inside the liquid film. W
It is possible to control the thinning of the boundary film that controls the reaction with organic substances such as resist on the surface of the substrate W, which is an extremely thin laminar flow portion of the surface of the substrate, and the temperature is raised to a predetermined temperature higher than the temperature of the processing liquid. By causing the ozone gas to act on the substrate W, the dissolution of ozone into the boundary film on the surface of the substrate W can be promoted, and the dissolved ozone concentration can be increased.

【００７４】また、処理液よりも高く加熱されたオゾン
により液膜に熱が与えられることで、処理液を蒸発させ
て境膜をさらに薄くでき、境膜中のオゾンの拡散が容易
となり、オゾンによる基板表面処理の反応速度を上げる
ことができ、処理時間の短縮、高スループットを実現で
きる。Further, since heat is applied to the liquid film by ozone heated higher than the treatment liquid, the treatment liquid can be evaporated to further thin the boundary film, facilitating diffusion of ozone in the boundary film, and thus ozone. It is possible to increase the reaction speed of the substrate surface treatment due to, reduce the treatment time and realize high throughput.

【００７５】また、基板Ｗ上への液膜形成と、基板Ｗへ
のオゾンガスの作用とを処理槽１内で同時に行えるよう
にしているので、第１，第２工程を同時に行うことがで
き、基板Ｗ上への液膜形成が完了した後にこの基板Ｗに
オゾンを作用させる場合に比べて、オゾンによる基板Ｗ
の表面の処理時間をさらに短縮でき、さらに高スループ
ットを図ることができる。Further, since the formation of the liquid film on the substrate W and the action of the ozone gas on the substrate W can be performed simultaneously in the processing tank 1, the first and second steps can be performed at the same time. Compared with the case where ozone is allowed to act on the substrate W after the liquid film formation on the substrate W is completed, the substrate W by ozone is
The surface treatment time can be further shortened, and higher throughput can be achieved.

【００７６】また、基板Ｗを処理液に浸漬させてから処
理液から取り出すことで、基板Ｗの表面上に液膜を形成
するので、基板Ｗの表面上に好適に液膜を形成できる。Further, since the liquid film is formed on the surface of the substrate W by immersing the substrate W in the processing liquid and then taking it out of the processing liquid, the liquid film can be preferably formed on the surface of the substrate W.

【００７７】また、処理槽１は、基板Ｗの一部分に処理
液を接触させた状態でこの基板Ｗを回転させて、基板Ｗ
の処理液接触箇所を回転とともに変更させることで、基
板Ｗの全面にわたって液膜を形成し、液膜が形成されて
回転される基板Ｗに、処理液よりも高い所定温度のオゾ
ンガスを作用させてこの基板Ｗを表面処理するように構
成されているので、基板Ｗ上への液膜形成とこの基板Ｗ
へのオゾンの作用とを同時に行う構成を実現でき、オゾ
ンによる基板Ｗの表面の処理時間を短縮できる。Further, the processing bath 1 rotates the substrate W while the processing liquid is in contact with a part of the substrate W,
By changing the treatment liquid contact portion of the substrate with the rotation, a liquid film is formed over the entire surface of the substrate W, and the substrate W rotated with the liquid film formed thereon is subjected to ozone gas having a predetermined temperature higher than that of the treatment liquid. Since the substrate W is configured to be surface-treated, the liquid film formation on the substrate W and the substrate W
It is possible to realize a configuration in which ozone acts on the surface of the substrate W at the same time, and it is possible to shorten the processing time of the surface of the substrate W by ozone.

【００７８】具体的には、処理液が供給されて所定量の
処理液を収容する処理槽１と、基板Ｗの処理液浸漬箇所
を変更させて、基板Ｗの全面にわたって液膜を形成させ
るように、処理槽１内の処理液中に基板Ｗの一部を浸漬
させた状態で基板Ｗを回転させる基板回転保持機構３１
とを備え、この処理槽１は、基板回転保持機構３１によ
り処理槽１内で回転される基板Ｗのうちの処理液浸漬箇
所以外の箇所に、処理液よりも高い所定温度のオゾンガ
スを作用させてこの基板Ｗを表面処理するので、基板Ｗ
の一部を処理液中に浸漬するタイプのものであっても、
基板Ｗ上への液膜形成とこの基板Ｗへのオゾンの作用と
を同時に行う構成を実現でき、オゾンによる基板表面の
処理時間を短縮できる。Specifically, the treatment tank 1 to which the treatment liquid is supplied and accommodates a predetermined amount of the treatment liquid, and the treatment liquid immersion portion of the substrate W are changed to form a liquid film over the entire surface of the substrate W. In addition, a substrate rotation holding mechanism 31 for rotating the substrate W in a state where a part of the substrate W is immersed in the processing liquid in the processing tank 1.
The processing bath 1 includes an ozone gas having a predetermined temperature higher than that of the processing liquid, which acts on a portion of the substrate W rotated in the processing bath 1 by the substrate rotation holding mechanism 31 other than the portion where the processing liquid is immersed. Since the substrate W is surface-treated, the substrate W
Even if it is a type in which a part of the
It is possible to realize a configuration in which the formation of the liquid film on the substrate W and the action of ozone on the substrate W are performed at the same time, and the treatment time of the substrate surface with ozone can be shortened.

【００７９】また、処理槽１内において基板Ｗを所定の
姿勢状態に保持する回転ドラム３２と、この回転ドラム
３２に設けられて、多数の貫通孔６が形成されたフィン
７とを備え、基板回転保持機構３１は、基板Ｗを回転さ
せるように回転ドラム３２を回転駆動することに伴って
フィン７を回転させて、このフィン７の回転作用によっ
て処理槽１内の処理液中にオゾンを溶解させるので、処
理液中にオゾンを積極的に溶解させることができ、処理
液への浸漬中においても処理液中のオゾンとの反応を起
すことができ、基板Ｗが処理液に浸漬している箇所もこ
の処理液中のオゾンと反応させることができ、オゾンに
よる基板表面処理の反応速度をさらに向上させることが
できる。Further, the rotating drum 32 for holding the substrate W in a predetermined posture in the processing tank 1 and the fins 7 provided on the rotating drum 32 and having a large number of through holes 6 are provided. The rotation holding mechanism 31 rotates the fins 7 as the rotary drum 32 is rotationally driven so as to rotate the substrate W, and the rotation action of the fins 7 dissolves ozone in the treatment liquid in the treatment tank 1. As a result, ozone can be positively dissolved in the processing liquid, a reaction with ozone in the processing liquid can occur even during immersion in the processing liquid, and the substrate W is immersed in the processing liquid. The spots can also be made to react with ozone in this treatment liquid, and the reaction rate of the substrate surface treatment with ozone can be further improved.

【００８０】また、ヒータ５１により、オゾンガスを昇
温してガス導入管５７の各ガス噴出孔５８から処理槽１
に供給するので、基板Ｗに作用させる昇温したオゾンガ
スを好適に供給でき、昇温されたオゾンガスによって基
板Ｗの表面の境膜を薄くすることができ、境膜中のオゾ
ンの拡散が容易となり、オゾンによる基板Ｗの表面処理
の反応速度を上げることができる。Further, the ozone gas is heated by the heater 51, and the gas is introduced from each gas ejection hole 58 of the gas introduction pipe 57 into the processing tank 1.
Since the heated ozone gas to be applied to the substrate W can be suitably supplied, the heated ozone gas can thin the boundary film on the surface of the substrate W, and facilitates diffusion of ozone in the boundary film. The reaction rate of the surface treatment of the substrate W with ozone can be increased.

【００８１】また、循環系７１は、処理槽１から排出さ
れた処理液を処理槽１に戻して基板Ｗの表面処理に再利
用するように、処理液を循環させるので、処理液の利用
効率を向上させることができ、処理液の使用量を必要最
小限にまで低減できる。Further, since the circulation system 71 circulates the processing liquid so that the processing liquid discharged from the processing tank 1 is returned to the processing tank 1 and reused for the surface treatment of the substrate W, the utilization efficiency of the processing liquid is improved. Can be improved, and the amount of the processing liquid used can be reduced to the necessary minimum.

【００８２】また、処理液昇温部７４は、処理液を所定
の温度に昇温させて処理槽１に供給するので、昇温され
た処理液によって基板Ｗの温度を上昇させることがで
き、基板Ｗの昇温によってこの基板Ｗのオゾンによる基
板表面処理の反応速度がさらに向上する。Further, since the processing liquid temperature raising unit 74 raises the temperature of the processing liquid to a predetermined temperature and supplies it to the processing bath 1, the temperature of the substrate W can be raised by the temperature of the heated processing liquid. By increasing the temperature of the substrate W, the reaction rate of the substrate surface treatment with ozone of the substrate W is further improved.

【００８３】〈第２実施例〉次に、本発明の第２実施例
に係る基板処理装置について、図７を参照して説明す
る。図７は、本発明の第２実施例に係る基板処理装置の
概略構成を示すブロック図である。本発明の第２実施例
に係る基板処理装置は、図７に示す加圧部８１以外につ
いては、上述した第１実施例と同じ構成であり、上述し
た第１実施例と同じ構成のものには同符号を付してい
る。なお、この第２実施例では、加圧部８１以外につい
ての構成の詳細な説明は省略する。<Second Embodiment> Next, a substrate processing apparatus according to a second embodiment of the present invention will be described with reference to FIG. FIG. 7 is a block diagram showing a schematic configuration of a substrate processing apparatus according to the second embodiment of the present invention. The substrate processing apparatus according to the second embodiment of the present invention has the same configuration as that of the above-described first embodiment except for the pressing unit 81 shown in FIG. 7, and has the same configuration as that of the above-described first embodiment. Are given the same reference numerals. In addition, in the second embodiment, detailed description of the configuration other than the pressing unit 81 is omitted.

【００８４】図７に示すように、加圧部８１は、処理槽
１内における、基板Ｗ上への液膜形成と基板Ｗへのオゾ
ンガスの作用とを、大気圧（＝０．１メガパスカル〔Ｍ
Ｐａ〕）よりも高い所定の加圧下（最大オゾンガス圧ま
での加圧下）で処理を行うためのものであり、前述の第
１実施例の排気系５の開閉弁６２に替えて、処理槽１内
の圧力を調整するための圧力調整バルブ８２を設けてい
る。この加圧部８１は、オゾンガス供給系４による処理
槽１内へのオゾンガス供給時に圧力調整バルブ８２から
の排気量を絞るようにすることで、処理槽１内の圧力
を、大気圧よりも高い最大オゾンガス圧（例えば、０．
３メガパスカル〔ＭＰａ〕や０．５メガパスカル〔ＭＰ
ａ〕などのガス圧）にすることができる。なお、この加
圧部８１による加圧は、例えば、図５に示すタイムチャ
ートにおける時刻ｔ３〜ｔ４までの間において行われ
る。なお、上述した加圧部８１が本発明における加圧手
段に相当する。As shown in FIG. 7, the pressurizing section 81 controls the formation of the liquid film on the substrate W and the action of ozone gas on the substrate W in the processing tank 1 at atmospheric pressure (= 0.1 megapascal). [M
Pa]) under a predetermined pressurization higher than that of Pa]) (pressurization up to the maximum ozone gas pressure), instead of the opening / closing valve 62 of the exhaust system 5 of the first embodiment described above, the processing tank 1 A pressure adjusting valve 82 for adjusting the internal pressure is provided. The pressurizing unit 81 reduces the exhaust amount from the pressure adjusting valve 82 when the ozone gas supply system 4 supplies the ozone gas into the processing tank 1, so that the pressure in the processing tank 1 is higher than the atmospheric pressure. Maximum ozone gas pressure (eg, 0.
3 megapascals [MPa] and 0.5 megapascals [MP]
a) or the like). The pressurization by the pressurizing unit 81 is performed, for example, from time t3 to t4 in the time chart shown in FIG. The pressure unit 81 described above corresponds to the pressure unit in the present invention.

【００８５】以上説明した第２実施例に係る基板処理装
置によれば、処理槽１内における、基板Ｗ上への液膜形
成および基板Ｗへのオゾンガスの作用とを、大気圧より
も高い所定の加圧下で処理を行うための加圧部８１を備
えているので、基板Ｗ上への液膜形成とオゾンによる表
面処理とを大気圧よりも高い加圧下で行うことができ、
溶存オゾン濃度や純水等の溶液の沸点を上げることがで
き、基板Ｗの表面上の液膜に溶解するオゾンの溶解度を
より一層高くすることができ、境膜内の溶存オゾン濃度
が高くなり、より一層、オゾンによる基板表面処理の反
応速度を向上させることができる。According to the substrate processing apparatus in the second embodiment described above, the liquid film formation on the substrate W and the action of ozone gas on the substrate W in the processing tank 1 are set to a predetermined value higher than the atmospheric pressure. Since the pressurizing unit 81 for performing the process under pressure is provided, the liquid film formation on the substrate W and the surface treatment with ozone can be performed under a pressure higher than atmospheric pressure,
The dissolved ozone concentration and the boiling point of a solution such as pure water can be increased, the solubility of ozone dissolved in the liquid film on the surface of the substrate W can be further increased, and the dissolved ozone concentration in the boundary film can be increased. Moreover, the reaction rate of the substrate surface treatment with ozone can be further improved.

【００８６】〈第３実施例〉次に、本発明の第３実施例
に係る基板処理装置について、図８を参照して説明す
る。図８は、本発明の第３実施例に係る基板処理装置の
概略構成を示すブロック図である。本発明の第３実施例
に係る基板処理装置は、図８に示す処理槽壁面昇温部９
１を設けている以外については、上述した第１実施例と
同じ構成であり、上述した第１実施例と同じ構成のもの
には同符号を付している。なお、この第３実施例では、
処理槽壁面昇温部９１以外についての構成の詳細な説明
は省略する。<Third Embodiment> Next, a substrate processing apparatus according to a third embodiment of the present invention will be described with reference to FIG. FIG. 8 is a block diagram showing a schematic configuration of the substrate processing apparatus according to the third embodiment of the present invention. The substrate processing apparatus according to the third embodiment of the present invention is provided with a processing tank wall surface temperature raising unit 9 shown in FIG.
Other than the provision of No. 1, the configuration is the same as that of the above-described first embodiment, and the same configurations as those of the above-described first embodiment are designated by the same reference numerals. In the third embodiment,
Detailed description of the configuration other than the processing tank wall surface temperature raising unit 91 is omitted.

【００８７】図８に示すように、処理槽壁面昇温部９１
は、基板Ｗをオゾン雰囲気中で作用させる処理槽１にお
けるオゾンの接触する壁面を、所定温度に昇温するもの
であり、例えば処理槽１の上半分側に設けられている。
この処理槽壁面昇温部９１は、処理槽１の上半分側の円
弧状の側壁に、水平方向（円筒形状の処理槽１の中心軸
方向）に向くように複数本（例えば１０本）並設された
ハロゲンランプ９２を備えている。これらのハロゲンラ
ンプ９２は、処理槽１の上半分側の円弧状の側壁に対し
て光を照射し、処理槽１におけるオゾンの接触する壁面
を、光照射によって所定温度に昇温する。なお、これら
のハロゲンランプ９２による処理槽１の上述の壁面の昇
温は、例えば、第１実施例で説明した図５に示すタイム
チャートにおける時刻ｔ２〜ｔ４までの間において行わ
れる。この第３実施例では、処理槽壁面昇温部９１とし
て、ハロゲンランプ９２を採用しているが、ヒータなど
を採用しても良い。なお、上述した処理槽壁面昇温部９
１が本発明における壁面昇温手段に相当する。As shown in FIG. 8, the processing tank wall surface temperature raising section 91.
Is for raising the temperature of the wall surface of the processing tank 1 that is in contact with ozone in the ozone atmosphere to a predetermined temperature, and is provided, for example, on the upper half side of the processing tank 1.
A plurality of (for example, 10) the treatment tank wall surface temperature raising portions 91 are arranged on the arcuate side wall on the upper half side of the treatment tank 1 so as to be oriented in the horizontal direction (the central axis direction of the cylindrical treatment tank 1). A halogen lamp 92 is provided. These halogen lamps 92 irradiate light on the arc-shaped side wall on the upper half side of the processing tank 1, and the wall surface of the processing tank 1 in contact with ozone is heated to a predetermined temperature by light irradiation. The temperature rise of the wall surface of the processing tank 1 by the halogen lamps 92 is performed, for example, from time t2 to t4 in the time chart shown in FIG. 5 described in the first embodiment. In the third embodiment, the halogen lamp 92 is used as the treatment tank wall surface temperature raising unit 91, but a heater or the like may be used. In addition, the processing tank wall surface temperature raising section 9 described above.
Reference numeral 1 corresponds to the wall surface temperature raising means in the present invention.

【００８８】以上説明した第３実施例に係る基板処理装
置によれば、、基板Ｗをオゾン雰囲気中で作用させる処
理槽１におけるオゾンの接触する壁面を、所定温度に昇
温する処理槽壁面昇温部９１を備えているので、処理槽
１に供給されたオゾンが、この処理槽１の温度の低い壁
面に接触することで、オゾンの温度が低下し、基板Ｗの
表面の境膜へのオゾンの溶解が低下するようなことを低
減できる。According to the substrate processing apparatus of the third embodiment described above, the wall surface of the processing tank 1 in which the substrate W is made to act in the ozone atmosphere is in contact with the ozone, and the wall surface of the processing tank is raised to a predetermined temperature. Since the temperature section 91 is provided, the ozone supplied to the processing tank 1 comes into contact with the wall surface of the processing tank 1 having a low temperature, whereby the temperature of the ozone decreases, and the ozone on the surface film of the substrate W reaches the film. It is possible to reduce the deterioration of ozone dissolution.

【００８９】なお、本発明は以下のように変形実施する
ことも可能である。 ＜変形例＞ （１）上述した各実施例では、処理槽１に純水を供給す
ることで基板Ｗの表面に純水による液膜を形成し、この
液膜が形成された基板Ｗにオゾンガスを作用させて基板
Ｗを表面処理しているが、処理槽１に供給する純水に、
ｐＨ（水素イオン指数）を下げる溶液（例えば塩酸や酢
酸など）を添加して、純水のｐＨを下げることで、純水
へのオゾンの溶解度を上げるようにしても良い。The present invention can be modified as follows. <Modifications> (1) In each of the embodiments described above, pure water is supplied to the processing bath 1 to form a liquid film of pure water on the surface of the substrate W, and ozone gas is applied to the substrate W on which the liquid film is formed. Is applied to the surface treatment of the substrate W, the pure water supplied to the treatment tank 1
The solubility of ozone in pure water may be increased by adding a solution that lowers the pH (hydrogen ion index) (for example, hydrochloric acid or acetic acid) to lower the pH of the pure water.

【００９０】（２）上述した各実施例では、オゾンガス
による基板Ｗの表面処理に際して、昇温させた処理液
（純水あるいはオゾン水）を処理槽１に供給して、基板
Ｗの昇温を図っているが、処理液を昇温せずに、例えば
常温：２５°Ｃ程度の処理液を処理槽１に供給しても良
い。この場合は、基板Ｗの温度を昇温させることによる
反応速度の向上という効果が得られない以外は、前述の
各実施例と同様の効果を有する。(2) In each of the embodiments described above, when the surface of the substrate W is treated with ozone gas, the heated treatment liquid (pure water or ozone water) is supplied to the treatment tank 1 to raise the temperature of the substrate W. Although illustrated, the treatment liquid may be supplied to the treatment tank 1 at a normal temperature: about 25 ° C. without raising the temperature of the treatment liquid. In this case, the same effect as each of the above-described embodiments is obtained except that the effect of increasing the reaction rate by raising the temperature of the substrate W cannot be obtained.

【００９１】（３）上述した各実施例では、１個のガス
注入管５７により処理槽１内にオゾンガスを供給するよ
うにしているが、複数個のガス注入管５７を処理槽１の
上部に配設し、これらのガス注入管５７により処理槽１
内にオゾンガスを供給するようにしても良い。また、１
個の液注入管２１により処理槽１内に処理液（純水な
ど）を供給するようにしているが、複数個の液注入管２
１を処理槽１の底部に配設し、これらの液注入管２１に
より処理槽１内に処理液を供給するようにしても良い。(3) In each of the above-described embodiments, the ozone gas is supplied into the processing tank 1 by one gas injection pipe 57, but a plurality of gas injection pipes 57 are provided above the processing tank 1. Arranged, and the processing tank 1 by these gas injection pipes 57
You may make it supply ozone gas inside. Also, 1
Although the processing liquid (pure water or the like) is supplied into the processing tank 1 by the individual liquid injection pipes 21, a plurality of liquid injection pipes 2
1 may be disposed at the bottom of the processing tank 1, and the processing liquid may be supplied into the processing tank 1 through the liquid injection pipes 21.

【００９２】（４）上述した各実施例では、循環系７１
を用いることで処理槽１から排出された処理液を再び処
理槽１に供給することで処理液を再利用するようにして
いるが、特に必要なければこの循環系７１を設けなくて
も良い。(4) In each of the above embodiments, the circulation system 71
Although the processing liquid discharged from the processing tank 1 is supplied to the processing tank 1 again by using, the processing liquid is reused. However, the circulation system 71 may not be provided unless particularly necessary.

【００９３】（５）上述した各実施例では、第１工程と
第２工程とを同時に行っているが、第１工程後に第２工
程を行う、あるいは、第１工程後に第２工程を行うこと
を所定回数にわたって繰り返し行うようにしても良い。
第１工程後に第２工程を行う構成としては次のようなも
のがある。例えば、図９に示すように、処理槽１内の真
空チャック部１０１で基板Ｗを水平姿勢で保持し、処理
液（純水など）を吐出するノズル１０２を例えば水平移
動させて、基板Ｗの表面に処理液（純水など）を所定時
間の間だけ供給して基板Ｗの表面に処理液による液膜を
形成し、その後に、オゾンガス供給系４のガス注入管５
７により、液膜の形成された基板Ｗにオゾンガスを供給
するようにしても良い。この動作を所定回数にわたって
繰り返し行うようにしても良い。なお、真空チャック部
１０１内に設けられたヒータ部１０３により基板Ｗの裏
面を加熱して昇温することがさらに好ましい。なお、上
記では、真空チャック部１０１を非回転とし、ノズル１
０２を水平移動させているが、ノズル１０２を位置固定
とし、ノズル１０２から処理液を基板Ｗに吐出し、真空
チャック部１０１を図９に１点鎖線で示すように回転さ
せることで、基板Ｗの表面に処理液による液膜を形成す
るようにしても良い。(5) In each of the above-mentioned embodiments, the first step and the second step are performed at the same time, but the second step is performed after the first step, or the second step is performed after the first step. May be repeated a predetermined number of times.
There are the following configurations for performing the second step after the first step. For example, as shown in FIG. 9, the substrate W is held in a horizontal posture by the vacuum chuck section 101 in the processing tank 1, and the nozzle 102 that discharges the processing liquid (pure water or the like) is horizontally moved to move the substrate W to the horizontal position. A treatment liquid (pure water or the like) is supplied to the surface for a predetermined time to form a liquid film of the treatment liquid on the surface of the substrate W, and then a gas injection pipe 5 of the ozone gas supply system 4 is formed.
7, ozone gas may be supplied to the substrate W on which the liquid film is formed. This operation may be repeated a predetermined number of times. It is more preferable to heat the back surface of the substrate W by the heater unit 103 provided in the vacuum chuck unit 101 to raise the temperature. In the above, the vacuum chuck portion 101 is not rotated and the nozzle 1
02 is moved horizontally, the nozzle 102 is fixed in position, the processing liquid is ejected from the nozzle 102 to the substrate W, and the vacuum chuck unit 101 is rotated as shown by the one-dot chain line in FIG. A liquid film of the treatment liquid may be formed on the surface of the.

【００９４】（６）上述した各実施例では、処理槽１
を、回転中の基板Ｗの一部を処理液（純水など）に浸漬
する方式のものとしているが、ノズルなどにより、回転
中の基板Ｗに対して処理液（純水など）を供給すること
で、基板Ｗの表面に液膜を形成しながら、液膜が形成さ
れた基板Ｗにオゾンガスを供給するシャワー方式（非浸
漬方式）のものとしても良い。なお、ノズルから供給さ
れる純水などの処理液は、所定温度に昇温された処理液
として基板Ｗに供給して基板Ｗを昇温させるようにする
方が好ましい。(6) In each of the above embodiments, the processing tank 1
Is a system in which a part of the rotating substrate W is immersed in a processing liquid (pure water or the like), but the processing liquid (pure water or the like) is supplied to the rotating substrate W by a nozzle or the like. Thus, a shower system (non-immersion system) that supplies ozone gas to the substrate W on which the liquid film is formed while forming the liquid film on the surface of the substrate W may be used. It is preferable that the processing liquid such as pure water supplied from the nozzle is supplied to the substrate W as the processing liquid heated to a predetermined temperature to raise the temperature of the substrate W.

【００９５】（７）上述した実施例では、基板Ｗをオゾ
ン水のみにより表面処理しているが、レジスト等の有機
物に対して反応速度の大きいＯＨラジカルなどの活性種
を発生させるために、例えばインライミキシングバルブ
１１で所望の薬液（例えば、過酸化水素水など）をオゾ
ン水に混合させて添加させたり、メガソニック（超音
波）照射、ＵＶ（紫外線）照射、放射線照射などをオゾ
ン水に付加させても良い。(7) In the above-described embodiment, the surface treatment of the substrate W is performed only with ozone water, but in order to generate active species such as OH radicals having a high reaction rate with respect to organic substances such as resist, for example, A desired chemical liquid (for example, hydrogen peroxide solution) is mixed with ozone water by the in-ray mixing valve 11, and megasonic (ultrasonic) irradiation, UV (ultraviolet) irradiation, radiation irradiation, etc. are added to ozone water. You may let me.

【００９６】（８）上述した実施例において、オゾン水
の半減期を長くするために、ｐＨの小さい酸（塩酸、フ
ッ酸等）などの薬液や、ＯＨラジカルのスカベンジャー
（消費物質）としての炭酸イオン（ＣＯ3 2- ），重炭酸
イオン（ＨＣＯ3 2- ）になる炭酸やカルボン酸などの薬
液を、インライミキシングバルブ１１でオゾン水に添加
するようにしても良い。(8) In the above-mentioned embodiment, in order to prolong the half-life of ozone water, a chemical solution such as an acid having a low pH (hydrochloric acid, hydrofluoric acid, etc.) or carbonic acid as a scavenger (consumer) of OH radicals A chemical solution such as carbonic acid or carboxylic acid which becomes an ion (CO 3 2− ) or a bicarbonate ion (HCO 3 2− ) may be added to the ozone water by the in-line mixing valve 11.

【００９７】（９）上述した実施例では、処理槽１を複
数枚の基板Ｗを一括して処理するバッチ処理のものとし
ているが、処理槽１を基板Ｗを１枚ずつ処理する枚葉処
理のものとする場合にも適用できる。(9) In the above-described embodiment, the processing bath 1 is a batch processing for collectively processing a plurality of substrates W, but the processing bath 1 is a single wafer processing for processing the substrates W one by one. It is also applicable to the case of

【００９８】[0098]

【発明の効果】以上の説明から明らかなように、請求項
１に記載の発明によれば、基板の表面上に処理液を接触
させて液膜を形成する第１工程と、この第１工程により
表面上に液膜が形成された基板に、処理液よりも高い所
定温度の気体としてのオゾンを作用させてこの基板を表
面処理する第２工程とを備えているので、基板のレジス
トなどの有機物との反応を支配する境膜を、薄くする制
御が可能となり、基板表面の境膜へのオゾンの溶解を促
進させることができ、溶存オゾン濃度を高めることがで
きる。また、処理液よりも高く加熱されたオゾンにより
液膜に熱が与えられることで、処理液を蒸発させて境膜
をさらに薄くでき、境膜中のオゾンの拡散が容易とな
り、オゾンによる基板表面処理の反応速度を上げること
ができる。その結果、処理時間の短縮、高スループット
を実現できる。As is apparent from the above description, according to the first aspect of the invention, the first step of forming a liquid film by contacting the treatment liquid on the surface of the substrate, and the first step The second step of subjecting the substrate having the liquid film formed on the surface thereof to the surface treatment by applying ozone as a gas having a predetermined temperature higher than that of the treatment liquid to the surface treatment of the substrate is performed. It is possible to control the thickness of the boundary film that governs the reaction with the organic substance to be thin, promote the dissolution of ozone into the boundary film on the substrate surface, and increase the dissolved ozone concentration. In addition, heat is applied to the liquid film by the ozone that is heated higher than the processing liquid, so that the processing liquid can be evaporated and the boundary film can be made thinner, and the diffusion of ozone in the boundary film becomes easier, and the substrate surface by the ozone The reaction speed of the treatment can be increased. As a result, the processing time can be shortened and high throughput can be realized.

【００９９】また、請求項２に記載の発明によれば、第
１工程は、基板を処理液に浸漬させてから取り出すこと
で、基板の表面上に液膜を形成しているので、基板の表
面上に好適に液膜を形成できる。According to the second aspect of the invention, in the first step, the liquid film is formed on the surface of the substrate by immersing the substrate in the processing liquid and then taking it out. A liquid film can be suitably formed on the surface.

【０１００】また、請求項３に記載の発明によれば、第
１工程と第２工程とを同時に行っているので、第１工程
完了後に第２工程を施す場合に比べて、オゾンによる基
板表面の処理時間を短縮でき、さらに高スループットを
図ることができる。According to the third aspect of the present invention, since the first step and the second step are performed at the same time, the surface of the substrate is not affected by ozone as compared with the case where the second step is performed after the completion of the first step. Processing time can be shortened, and higher throughput can be achieved.

【０１０１】また、請求項４に記載の発明によれば、基
板の表面上に処理液を接触させて液膜を形成する基板液
膜形成手段と、この基板液膜形成手段により表面上に液
膜が形成された基板に、処理液よりも高い所定温度の気
体としてのオゾンを作用させてこの基板を表面処理する
基板表面処理手段とを備えているので、基板のレジスト
などの有機物との反応を支配する境膜を、薄くする制御
が可能となり、基板表面の境膜へのオゾンの溶解を促進
させることができ、溶存オゾン濃度を高めることができ
る。また、処理液よりも高く加熱されたオゾンにより液
膜に熱が与えられることで、処理液を蒸発させて境膜を
さらに薄くでき、境膜中のオゾンの拡散が容易となり、
オゾンによる基板表面処理の反応速度を上げることがで
きる。その結果、処理時間の短縮、高スループットを実
現できる。Further, according to the invention described in claim 4, a substrate liquid film forming means for forming a liquid film by contacting a treatment liquid on the surface of the substrate, and a liquid on the surface by the substrate liquid film forming means. Since the substrate on which the film is formed is provided with a substrate surface treatment means for subjecting the substrate to a surface treatment by applying ozone as a gas having a predetermined temperature higher than that of the treatment liquid, reaction with an organic substance such as a resist of the substrate. It is possible to control the thickness of the boundary film that controls the film thickness, to accelerate the dissolution of ozone into the boundary film on the substrate surface, and to increase the dissolved ozone concentration. In addition, since heat is applied to the liquid film by ozone heated higher than the treatment liquid, the treatment liquid can be evaporated to further thin the boundary film, and diffusion of ozone in the boundary film becomes easy,
The reaction rate of the substrate surface treatment with ozone can be increased. As a result, the processing time can be shortened and high throughput can be realized.

【０１０２】また、請求項５に記載の発明によれば、基
板液膜形成手段による基板上への液膜形成と、基板表面
処理手段による基板への気体としてのオゾンの作用とを
同時に行っているので、オゾンによる基板表面の処理時
間を、基板上への液膜形成が完了した後にこの基板にオ
ゾンを作用させる場合に比べて短縮することができ、さ
らに高スループットを図ることができる。According to the fifth aspect of the invention, the formation of the liquid film on the substrate by the substrate liquid film forming means and the action of ozone as a gas on the substrate by the substrate surface treatment means are performed simultaneously. Therefore, the treatment time of the substrate surface with ozone can be shortened as compared with the case where ozone is allowed to act on the substrate after the formation of the liquid film on the substrate is completed, and a higher throughput can be achieved.

【０１０３】また、請求項６に記載の発明によれば、基
板液膜形成手段は、基板を処理液に浸漬させてから取り
出すことで、基板の表面上に液膜を形成するので、基板
の表面上に好適に液膜を形成できる。According to the invention of claim 6, the substrate liquid film forming means forms the liquid film on the surface of the substrate by immersing the substrate in the processing liquid and then taking it out. A liquid film can be suitably formed on the surface.

【０１０４】また、請求項７に記載の発明によれば、基
板液膜形成手段は、基板の一部分に処理液を接触させた
状態でこの基板を回転させて、基板の処理液接触箇所を
回転とともに変更させることで、基板全面にわたって液
膜を形成し、基板表面処理手段は、基板液膜形成手段に
より液膜が形成されて回転される基板に、処理液よりも
高い所定温度の気体としてのオゾンを作用させてこの基
板を表面処理するので、基板上への液膜形成とこの基板
へのオゾンの作用とを同時に行う構成を実現でき、オゾ
ンによる基板表面の処理時間を短縮できる。According to the invention described in claim 7, the substrate liquid film forming means rotates the substrate in a state where the processing liquid is in contact with a part of the substrate and rotates the processing liquid contact portion of the substrate. The liquid crystal film is formed on the entire surface of the substrate by changing the temperature of the liquid crystal layer, and the substrate surface processing means forms a liquid film on the substrate by the liquid crystal film forming means and rotates the substrate as a gas having a predetermined temperature higher than that of the processing liquid. Since the substrate is subjected to the surface treatment by applying ozone, it is possible to realize a configuration in which the formation of the liquid film on the substrate and the action of the ozone on the substrate are performed at the same time, and the treatment time of the substrate surface with ozone can be shortened.

【０１０５】また、請求項８に記載の発明によれば、基
板液膜形成手段は、処理液が供給されて所定量の処理液
を収容する処理槽と、基板の処理液浸漬箇所を変更させ
て、基板全面にわたって液膜を形成させるように、処理
槽内の処理液中に基板の一部を浸漬させた状態で基板を
回転させる基板回転手段とを備え、基板表面処理手段
は、基板回転手段により処理槽内で回転される基板のう
ちの処理液浸漬箇所以外の箇所に、処理液よりも高い所
定温度の気体としてのオゾンを作用させてこの基板を表
面処理するので、基板の一部を処理液中に浸漬するタイ
プのものであっても、基板上への液膜形成とこの基板へ
のオゾンの作用とを同時に行う構成を実現でき、オゾン
による基板表面の処理時間を短縮できる。According to the eighth aspect of the present invention, the substrate liquid film forming means changes the processing bath to which the processing liquid is supplied and stores a predetermined amount of the processing liquid, and the processing liquid dipping portion of the substrate. And a substrate rotating means for rotating the substrate in a state where a part of the substrate is immersed in the processing liquid in the processing tank so that a liquid film is formed over the entire surface of the substrate. Since ozone as a gas having a predetermined temperature higher than that of the treatment liquid is applied to the surface of the substrate which is rotated in the treatment tank by the means, other than the portion where the treatment liquid is immersed, the surface of the substrate is partially treated. Even in the type in which the substrate is immersed in the treatment liquid, it is possible to realize a configuration in which the formation of the liquid film on the substrate and the action of ozone on the substrate are simultaneously realized, and the treatment time of the substrate surface with ozone can be shortened.

【０１０６】また、請求項９に記載の発明によれば、基
板回転手段は、処理槽内において基板を所定の姿勢状態
に保持する保持手段と、保持手段に設けられて、多数の
貫通孔が形成された羽根部材とを備え、基板回転手段
は、基板を回転させるように保持手段を回転駆動するこ
とに伴って羽根部材を回転させて、この羽根部材の回転
作用によって処理槽内の処理液中にオゾンを溶解させる
ので、処理液中にオゾンを積極的に溶解させることがで
き、処理液への浸漬中においても処理液中のオゾンとの
反応が起こり、すなわち、基板が処理液に浸漬している
箇所もこの処理液中のオゾンと反応させることができ、
オゾンによる基板表面処理の反応速度がさらに向上す
る。According to the ninth aspect of the invention, the substrate rotating means is provided with the holding means for holding the substrate in a predetermined posture in the processing tank, and the holding means is provided with a large number of through holes. The substrate rotating means rotates the blade member in association with the rotation of the holding means so as to rotate the substrate, and the rotation action of the blade member causes the processing liquid in the processing bath to rotate. Since ozone is dissolved in the solution, ozone can be positively dissolved in the processing solution, and a reaction with ozone in the processing solution occurs even during immersion in the processing solution, that is, the substrate is immersed in the processing solution. It is possible to react with the ozone in this processing liquid at the part where
The reaction rate of the substrate surface treatment with ozone is further improved.

【０１０７】また、請求項１０に記載の発明によれば、
加熱手段は、気体としてのオゾンを昇温して基板表面処
理手段に供給するので、基板に作用させる昇温したオゾ
ンを好適に供給でき、昇温されたオゾンによって基板表
面の境膜を薄くすることができ、境膜中のオゾンの拡散
が容易となり、オゾンによる基板表面処理の反応速度を
上げることができる。According to the invention described in claim 10,
Since the heating means raises the temperature of ozone as a gas and supplies it to the substrate surface treatment means, it is possible to preferably supply the raised ozone that acts on the substrate, and the raised ozone thins the film on the surface of the substrate. Therefore, the diffusion of ozone in the film becomes easy, and the reaction rate of the substrate surface treatment with ozone can be increased.

【０１０８】また、請求項１１に記載の発明によれば、
循環手段は、基板液膜形成手段から排出された処理液を
基板液膜形成手段に戻して基板の表面処理に再利用する
ように、処理液を循環させるので、処理液の利用効率を
向上させることができ、処理液の使用量を必要最小限に
まで低減できる。According to the invention described in claim 11,
The circulation means circulates the processing liquid so that the processing liquid discharged from the substrate liquid film forming means is returned to the substrate liquid film forming means and reused for the surface treatment of the substrate, so that the utilization efficiency of the processing liquid is improved. It is possible to reduce the amount of processing liquid used to the minimum necessary.

【０１０９】また、請求項１２に記載の発明によれば、
処理液昇温手段は、基板液膜形成手段に供給される処理
液を所定の温度に昇温させるので、昇温された処理液に
よって基板の温度を上昇させることができ、基板の昇温
によってこの基板のオゾンによる基板表面処理の反応速
度をさらに向上させることができる。Further, according to the invention of claim 12,
Since the processing liquid temperature raising means raises the temperature of the processing liquid supplied to the substrate liquid film forming means to a predetermined temperature, the temperature of the substrate can be raised by the raised processing liquid. The reaction rate of the substrate surface treatment with ozone on this substrate can be further improved.

【０１１０】また、請求項１３に記載の発明によれば、
処理部は、基板液膜形成手段による基板上への液膜形成
と、基板表面処理手段による基板への気体としてのオゾ
ンの作用とを、大気圧よりも高い所定の加圧下で処理を
行うための加圧手段を備えているので、基板表面上の液
膜に溶解するオゾンの溶解度をより一層高くすることが
でき、境膜内の溶存オゾン濃度が高くなり、より一層、
オゾンによる基板表面処理の反応速度を向上させること
ができ、処理時間の短縮、高スループットを実現でき
る。Further, according to the invention described in claim 13,
The processing unit processes the liquid film formation on the substrate by the substrate liquid film forming unit and the action of ozone as a gas on the substrate by the substrate surface processing unit under a predetermined pressure higher than atmospheric pressure. Since the pressurizing means is provided, the solubility of ozone dissolved in the liquid film on the substrate surface can be further increased, the concentration of dissolved ozone in the boundary film is increased, and
The reaction rate of the substrate surface treatment with ozone can be improved, the treatment time can be shortened, and high throughput can be realized.

【０１１１】また、請求項１４に記載の発明によれば、
壁面昇温手段は、基板をオゾン雰囲気中で作用させる処
理部におけるオゾンの接触する壁面を、所定温度に昇温
するので、処理部に供給されたオゾンがこの処理部の温
度の低い壁面に接触することで、オゾンの温度が低下
し、基板表面の境膜へのオゾンの溶解が低下するような
ことを低減できる。According to the invention described in claim 14,
The wall surface temperature raising means raises the temperature of the wall surface of the processing unit that is in contact with ozone in the ozone atmosphere to a predetermined temperature, so that the ozone supplied to the processing unit contacts the low temperature wall surface of the processing unit. By doing so, it is possible to prevent the temperature of ozone from decreasing and the dissolution of ozone in the boundary film on the surface of the substrate from decreasing.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の第１実施例に係る基板処理装置の概略
構成を示すブロック図である。FIG. 1 is a block diagram showing a schematic configuration of a substrate processing apparatus according to a first embodiment of the present invention.

【図２】本発明の第１実施例に係る基板処理装置の処理
槽の概略構成を示す外観斜視図である。FIG. 2 is an external perspective view showing a schematic configuration of a processing tank of the substrate processing apparatus according to the first embodiment of the present invention.

【図３】本発明の第１実施例に係る基板処理装置の処理
槽の概略構成を示す縦断面図である。FIG. 3 is a vertical sectional view showing a schematic configuration of a processing tank of the substrate processing apparatus according to the first embodiment of the present invention.

【図４】（ａ）は処理槽内の回転ドラムの概略側面図で
あり、（ｂ）は（ａ）に示した回転ドラムの保持桿に設
けられたフィンの概略正面図である。4A is a schematic side view of a rotary drum in a processing tank, and FIG. 4B is a schematic front view of fins provided on a holding rod of the rotary drum shown in FIG. 4A.

【図５】本発明の第１実施例に係る基板処理装置の各動
作の流れを説明するためのタイムチャートである。FIG. 5 is a time chart for explaining the flow of each operation of the substrate processing apparatus according to the first embodiment of the present invention.

【図６】（ａ）〜（ｃ）は基板の任意の箇所について液
面から出た直後と液面から離れたときと液面下に入る直
前とのそれぞれの表面形状を示す模式図である。6 (a) to 6 (c) are schematic diagrams showing the surface shapes of an arbitrary portion of the substrate immediately after coming out of the liquid surface, when leaving the liquid surface, and just before going below the liquid surface. .

【図７】本発明の第２実施例に係る基板処理装置の概略
構成を示すブロック図である。FIG. 7 is a block diagram showing a schematic configuration of a substrate processing apparatus according to a second embodiment of the present invention.

【図８】本発明の第３実施例に係る基板処理装置の概略
構成を示すブロック図である。FIG. 8 is a block diagram showing a schematic configuration of a substrate processing apparatus according to a third embodiment of the present invention.

【図９】本発明の第１〜３実施例とは別の基板処理装置
の要部の構成を示す概略側面図である。FIG. 9 is a schematic side view showing a configuration of a main part of a substrate processing apparatus different from the first to third embodiments of the present invention.

【符号の説明】[Explanation of symbols]

１ … 処理槽 ２ … 液供給系 ４ … オゾンガス供給系 ６ … 貫通孔 ７ … フィン ３１ … 基板回転保持機構 ３２ … 回転ドラム ５１ … ヒータ ７１ … 循環系 ７４ … 処理液昇温部 ８１ … 加圧部 ９１ … 処理槽壁面昇温部 Ｗ … 基板 1 ... Processing tank 2 ... Liquid supply system 4 ... Ozone gas supply system 6 ... Through hole 7 ... Fins 31 ... Substrate rotation holding mechanism 32 ... rotating drum 51 ... Heater 71 ... Circulatory system 74 ... Treatment liquid temperature raising section 81 ... Pressurizing unit 91 ... Treatment tank wall temperature raising section W ... Substrate

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 21/306 Ｈ０１Ｌ 21/306 Ｄ Ｆターム(参考） 3B116 AA01 AB33 AB47 BB21 BB82 BB90 3B201 AA01 AB33 AB47 BB02 BB82 BB89 BB90 BB92 BB93 BB98 5F043 BB27 CC16 DD15 EE01 EE04 5F046 MA05 MA06 MA10 ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI theme code (reference) H01L 21/306 H01L 21/306 DF term (reference) 3B116 AA01 AB33 AB47 BB21 BB82 BB90 3B201 AA01 AB33 AB47 BB02 BB82 BB89 BB90 BB92 BB93 BB98 5F043 BB27 CC16 DD15 EE01 EE04 5F046 MA05 MA06 MA10

Claims (14)

【特許請求の範囲】[Claims] 【請求項１】 基板を表面処理する基板処理方法におい
て、 基板の表面上に処理液を接触させて液膜を形成する第１
工程と、 前記第１工程により表面上に液膜が形成された基板に、
処理液よりも高い所定温度の気体としてのオゾンを作用
させてこの基板を表面処理する第２工程とを備えている
ことを特徴とする基板処理方法。1. A substrate processing method for surface-treating a substrate, comprising forming a liquid film by bringing a processing liquid into contact with the surface of the substrate.
And a substrate on which a liquid film is formed on the surface by the first step,
A second step of subjecting the substrate to a surface treatment by causing ozone as a gas having a predetermined temperature higher than that of the treatment liquid to act thereon. 【請求項２】 請求項１に記載の基板処理方法におい
て、 前記第１工程は、基板を処理液に浸漬させ、処理液から
取り出すことで、基板の表面上に液膜を形成することを
特徴とする基板処理方法。2. The substrate processing method according to claim 1, wherein the first step forms the liquid film on the surface of the substrate by immersing the substrate in the processing liquid and removing the substrate from the processing liquid. Substrate processing method. 【請求項３】 請求項１または請求項２に記載の基板処
理方法において、 前記第１工程と前記第２工程とを同時に行うことを特徴
とする基板処理方法。3. The substrate processing method according to claim 1 or 2, wherein the first step and the second step are performed at the same time. 【請求項４】 基板を表面処理する処理部を備えた基板
処理装置において、 前記処理部は、 基板の表面上に処理液を接触させて液膜を形成する基板
液膜形成手段と、 前記基板液膜形成手段により表面上に液膜が形成された
基板に、処理液よりも高い所定温度の気体としてのオゾ
ンを作用させてこの基板を表面処理する基板表面処理手
段とを備えていることを特徴とする基板処理装置。4. A substrate processing apparatus comprising a processing unit for surface-treating a substrate, wherein the processing unit comprises a substrate liquid film forming means for contacting a processing liquid on the surface of the substrate to form a liquid film, and the substrate. And a substrate surface treatment means for treating the substrate, on which a liquid film is formed on the surface by the liquid film forming means, with ozone as a gas having a predetermined temperature higher than that of the treatment liquid to treat the surface of the substrate. A characteristic substrate processing apparatus. 【請求項５】 請求項４に記載の基板処理装置におい
て、 前記基板液膜形成手段による基板上への液膜形成と、前
記基板表面処理手段による基板への気体としてのオゾン
の作用とを同時に行うことを特徴とする基板処理装置。5. The substrate processing apparatus according to claim 4, wherein the liquid film formation on the substrate by the substrate liquid film forming means and the action of ozone as a gas on the substrate by the substrate surface processing means are performed at the same time. A substrate processing apparatus characterized by performing. 【請求項６】 請求項４または請求項５に記載の基板処
理装置において、 前記基板液膜形成手段は、基板を処理液に浸漬させ、処
理液から取り出すことで、基板の表面上に液膜を形成す
ることを特徴とする基板処理装置。6. The substrate processing apparatus according to claim 4 or 5, wherein the substrate liquid film forming means immerses the substrate in the processing liquid and removes the substrate from the processing liquid to form a liquid film on the surface of the substrate. A substrate processing apparatus, comprising: 【請求項７】 請求項５に記載の基板処理装置におい
て、 前記基板液膜形成手段は、基板の一部分に処理液を接触
させた状態でこの基板を回転させて、基板の処理液接触
箇所を回転とともに変更させることで、基板全面にわた
って液膜を形成し、 前記基板表面処理手段は、前記基板液膜形成手段により
液膜が形成されて回転される基板に、処理液よりも高い
所定温度の気体としてのオゾンを作用させてこの基板を
表面処理することを特徴とする基板処理装置。7. The substrate processing apparatus according to claim 5, wherein the substrate liquid film forming unit rotates the substrate in a state where the processing liquid is in contact with a part of the substrate, and the processing liquid contact portion of the substrate is moved. A liquid film is formed over the entire surface of the substrate by changing it along with the rotation, and the substrate surface treatment means forms a liquid film on the substrate by the substrate liquid film forming means and rotates the substrate at a predetermined temperature higher than that of the treatment liquid. A substrate processing apparatus, characterized in that ozone as gas is caused to act on the surface of the substrate. 【請求項８】 請求項５または請求項６に記載の基板処
理装置において、 前記基板液膜形成手段は、 処理液が供給されて所定量の処理液を収容する処理槽
と、 基板の処理液浸漬箇所を変更させて、基板全面にわたっ
て液膜を形成させるように、前記処理槽内の処理液中に
基板の一部を浸漬させた状態で基板を回転させる基板回
転手段とを備え、 前記基板表面処理手段は、前記基板回転手段により前記
処理槽内で回転される基板のうちの処理液浸漬箇所以外
の箇所に、処理液よりも高い所定温度の気体としてのオ
ゾンを作用させてこの基板を表面処理することを特徴と
する基板処理装置。8. The substrate processing apparatus according to claim 5, wherein the substrate liquid film forming unit is a processing tank to which a processing liquid is supplied and which stores a predetermined amount of the processing liquid, and a processing liquid for the substrate. A substrate rotating unit that rotates the substrate while partially immersing the substrate in the treatment liquid in the treatment tank so as to form a liquid film over the entire surface of the substrate by changing the immersion location; The surface treatment means applies ozone as a gas having a predetermined temperature higher than that of the treatment liquid to a portion of the substrate rotated in the treatment tank by the substrate rotation means, other than the treatment liquid immersion portion, to move the substrate. A substrate processing apparatus characterized by surface treatment. 【請求項９】 請求項８に記載の基板処理装置におい
て、 前記基板回転手段は、前記処理槽内において基板を所定
の姿勢状態に保持する保持手段を備え、 多数の貫通孔が形成された羽根部材が前記保持手段に設
けられ、 基板を回転させるように前記保持手段を回転駆動するこ
とに伴って前記羽根部材を回転させて、前記羽根部材の
回転作用によって前記処理槽内の処理液中にオゾンを溶
解させることを特徴とする基板処理装置。9. The substrate processing apparatus according to claim 8, wherein the substrate rotating means includes a holding means for holding the substrate in a predetermined posture in the processing tank, and a blade having a large number of through holes formed therein. A member is provided in the holding means, and the blade member is rotated in association with the rotation of the holding means so as to rotate the substrate. A substrate processing apparatus characterized by dissolving ozone. 【請求項１０】 請求項４から請求項９のいずれかに記
載の基板処理装置において、 前記処理部は、気体としてのオゾンを前記基板表面処理
手段に供給する経路にこのオゾンを昇温するための加熱
手段を備えていることを特徴とする基板処理装置。10. The substrate processing apparatus according to claim 4, wherein the processing unit raises the temperature of ozone as a gas supplied to the substrate surface processing unit. A substrate processing apparatus, comprising: 【請求項１１】 請求項４から請求項１０のいずれかに
記載の基板処理装置において、 前記基板液膜形成手段から排出された処理液を前記基板
液膜形成手段に戻して基板の表面処理に再利用するよう
に、処理液を循環させる循環手段を備えていることを特
徴とする基板処理装置。11. The substrate processing apparatus according to claim 4, wherein the processing liquid discharged from the substrate liquid film forming means is returned to the substrate liquid film forming means for surface treatment of the substrate. A substrate processing apparatus comprising a circulation means for circulating a processing liquid so as to be reused. 【請求項１２】 請求項４から請求項１１のいずれかに
記載の基板処理装置において、 前記基板液膜形成手段に供給される処理液を所定の温度
に昇温させる処理液昇温手段を備えていることを特徴と
する基板処理装置。12. The substrate processing apparatus according to claim 4, further comprising a processing liquid temperature raising means for raising the temperature of the processing liquid supplied to the substrate liquid film forming means to a predetermined temperature. A substrate processing apparatus characterized in that. 【請求項１３】 請求項４から請求項１２のいずれかに
記載の基板処理装置において、 前記処理部は、前記基板液膜形成手段による基板上への
液膜形成と、前記基板表面処理手段による基板への気体
としてのオゾンの作用とを、大気圧よりも高い所定の加
圧下で処理を行うための加圧手段を備えていることを特
徴とする基板処理装置。13. The substrate processing apparatus according to claim 4, wherein the processing section includes a liquid film formed on the substrate by the substrate liquid film forming means and a substrate surface processing means. A substrate processing apparatus comprising: a pressurizing unit for performing a process of ozone acting as a gas on a substrate under a predetermined pressure higher than atmospheric pressure. 【請求項１４】 請求項４から請求項１３のいずれかに
記載の基板処理装置において、 基板をオゾン雰囲気中で作用させる前記処理部の壁面を
所定温度に昇温する壁面昇温手段を備えていることを特
徴とする基板処理装置。14. The substrate processing apparatus according to claim 4, further comprising wall surface temperature raising means for heating a wall surface of the processing unit for operating the substrate in an ozone atmosphere to a predetermined temperature. A substrate processing apparatus characterized in that
JP2001243599A 2001-08-10 2001-08-10 Substrate processing equipment Expired - Lifetime JP3976088B2 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7160416B2 (en) 2004-03-30 2007-01-09 Dainippon Screen Mfg. Co., Ltd. Substrate treating apparatus
EP2113939A2 (en) 2008-05-02 2009-11-04 Sumco Techxiv Corporation Semiconductor wafer processing method and apparatus
JP2012015171A (en) * 2010-06-29 2012-01-19 Sumco Corp Wafer etching jig

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7160416B2 (en) 2004-03-30 2007-01-09 Dainippon Screen Mfg. Co., Ltd. Substrate treating apparatus
EP2113939A2 (en) 2008-05-02 2009-11-04 Sumco Techxiv Corporation Semiconductor wafer processing method and apparatus
US8334222B2 (en) 2008-05-02 2012-12-18 Sumco Techxiv Corporation Semiconductor wafer processing method and apparatus
JP2012015171A (en) * 2010-06-29 2012-01-19 Sumco Corp Wafer etching jig

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