JP2003059033A - Magnetic recording medium and its manufacturing method and device - Google Patents
Magnetic recording medium and its manufacturing method and deviceInfo
- Publication number
- JP2003059033A JP2003059033A JP2001251547A JP2001251547A JP2003059033A JP 2003059033 A JP2003059033 A JP 2003059033A JP 2001251547 A JP2001251547 A JP 2001251547A JP 2001251547 A JP2001251547 A JP 2001251547A JP 2003059033 A JP2003059033 A JP 2003059033A
- Authority
- JP
- Japan
- Prior art keywords
- film
- recording medium
- protective film
- magnetic recording
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、磁気記録媒体及び
その製造方法ならびに製造装置に係り、特にフレキシブ
ル基板上に厚さ０．２μｍ以下の金属薄膜からなる磁性
膜、厚さ２０ｎｍ以下の硬質保護膜を順次設けた磁気記
録媒体及びその製造方法ならびに製造装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic recording medium, a method for manufacturing the same, and a manufacturing apparatus therefor, and more particularly, a magnetic film made of a metal thin film having a thickness of 0.2 μm or less on a flexible substrate, and a hard protection having a thickness of 20 nm or less. The present invention relates to a magnetic recording medium in which films are sequentially provided, a manufacturing method thereof, and a manufacturing apparatus.
【０００２】[0002]
【従来の技術】フレキシブル磁気記録媒体における最近
の大容量化の取り組みの一手法として、ベースヘィルム
の薄手化、平滑化を目指す方法がある。ベースフィルム
の薄手化は記録面積の増大に寄与する。ベースフィルム
表面の平滑化は磁性膜欠陥を減少させ、記録密度の向上
に寄与する。2. Description of the Related Art As one of recent techniques for increasing the capacity of a flexible magnetic recording medium, there is a method for thinning and smoothing a base film. Thinning the base film contributes to an increase in recording area. Smoothing the surface of the base film reduces magnetic film defects and contributes to an improvement in recording density.
【０００３】しかし、ベースフィルムの表面性を平滑に
し過ぎると、ヘッドとの間で貼り付きを生じて、走行、
摺動特性が劣化し、安定した出力が得られなくなるとい
う問題が生じる。そこで例えば、現行の蒸着テープなど
ではベースフィルム上に易滑層と呼ばれる、均質にフィ
ルム表面を粗す層を設けている。この層はテープの摺動
特性を改善する一方、磁性膜の欠陥を増大させ、記録密
度向上の阻害要因となっている。However, if the surface property of the base film is excessively smooth, sticking occurs between the head and the head, which causes running,
There is a problem that the sliding characteristics deteriorate and stable output cannot be obtained. Therefore, for example, in the current vapor deposition tape or the like, a layer called a slipping layer that uniformly roughens the film surface is provided on the base film. While this layer improves the sliding characteristics of the tape, it also increases defects in the magnetic film, which is an obstacle to improving the recording density.
【０００４】このように摺動特性と記録再生特性がトレ
ードオフの関係にあり、実用化レベルでの記録密度向上
を困難にしている。As described above, there is a trade-off relationship between the sliding characteristic and the recording / reproducing characteristic, which makes it difficult to improve the recording density at a practical level.
【０００５】上記問題を解決するため、基体表面の表面
性は良好なまま、硬質保護膜表面を粗す方法が幾つか提
案されている。例えば、硬質保護膜と磁性膜の間に島状
構造の中間膜を設ける方法、硬質保護膜と磁性膜の間に
分散させた微粉末層を挟む方法、硬質保護膜上に微粉末
を振り掛け、その表面をプラズマエッチングした後、洗
浄して微粉末を取り去る方法などが知られている。In order to solve the above problems, some methods have been proposed for roughening the surface of the hard protective film while keeping the surface property of the substrate good. For example, a method of providing an intermediate film having an island structure between the hard protective film and the magnetic film, a method of sandwiching the fine powder layer dispersed between the hard protective film and the magnetic film, and sprinkling fine powder on the hard protective film, A method is known in which the surface is plasma-etched and then washed to remove fine powder.
【０００６】[0006]
【発明が解決しようとする課題】しかし、硬質保護膜と
磁性膜の間に中間層を設ける方法は、スペーシングを増
大させ、記録再生特性を劣化させる。また、微粉末を振
り掛けた硬質保護膜表面をプラズマエッチングし洗浄し
て微粉末を取り去る方法は、生産性に問題があり、実用
的ではない。However, the method of providing the intermediate layer between the hard protective film and the magnetic film increases the spacing and deteriorates the recording / reproducing characteristics. Further, the method of removing the fine powder by plasma etching and cleaning the surface of the hard protective film sprinkled with the fine powder has a problem in productivity and is not practical.
【０００７】本発明の目的は、このような従来技術の摺
動特性と記録再生特性の相反性という欠点を解消し、実
用化レベルでの記録密度向上を図ることが可能な磁気記
録媒体及びその製造方法ならびに製造装置を提供するこ
とを目的とする。An object of the present invention is to eliminate the drawbacks of the prior art such as the reciprocity of the sliding characteristic and the recording / reproducing characteristic, and to improve the recording density at a practical level, and a magnetic recording medium thereof. An object is to provide a manufacturing method and a manufacturing apparatus.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するため
に、本発明の第１の手段は、フレキシブル基板上に厚さ
０．２μｍ以下の金属薄膜からなる磁性膜、厚さ２０ｎ
ｍ以下の硬質保護膜を順次設けた磁気記録媒体におい
て、前記フレキシブル基板の表面粗度Ｒａが２ｎｍ以下
で、かつ前記硬質保護膜の最大膜厚をＬ１、最小膜厚を
Ｌ３、最大膜厚と最小膜厚の差をＬ２としたときの（Ｌ
２／Ｌ１）×１００≧３０％で、Ｌ３≧０．００１ｎｍ
であることを特徴とするものである。In order to achieve the above object, the first means of the present invention is a magnetic film made of a metal thin film having a thickness of 0.2 μm or less on a flexible substrate and having a thickness of 20 n.
In a magnetic recording medium in which hard protective films of m or less are sequentially provided, the surface roughness Ra of the flexible substrate is 2 nm or less, and the maximum film thickness of the hard protective film is L1, the minimum film thickness is L3, and the maximum film thickness is L3. When the difference in the minimum film thickness is L2, (L
2 / L1) × 100 ≧ 30%, L3 ≧ 0.001 nm
It is characterized by being.
【０００９】本発明の第２の手段は、長尺のフレキシブ
ル基板を、冷却ドラムを介して連続的に巻き取りながら
硬質保護膜をプラズマＣＶＤ法によって成膜する磁気記
録媒体の製造方法において、前記冷却ドラム表面の５０
μｍ×５０μｍの面積内に高さ５０ｎｍ以上５００ｎｍ
以下の１個以上の突起または窪みを形成することを特徴
とするものである。A second means of the present invention is a method for manufacturing a magnetic recording medium, wherein a hard protective film is formed by a plasma CVD method while continuously winding a long flexible substrate through a cooling drum. 50 on the surface of the cooling drum
Height of 50 nm or more and 500 nm within an area of μm × 50 μm
It is characterized by forming one or more of the following protrusions or depressions.
【００１０】本発明の第３の手段は、長尺のフレキシブ
ル基板を、冷却ドラムを介して連続的に巻き取りながら
硬質保護膜をプラズマＣＶＤ法によって成膜する磁気記
録媒体の製造装置において、前記冷却ドラム表面に５０
μｍ×５０μｍの面積内に高さ５０ｎｍ以上５００ｎｍ
以下の１個以上の突起または窪みが形成されていること
を特徴とするものである。A third means of the present invention is a magnetic recording medium manufacturing apparatus for forming a hard protective film by a plasma CVD method while continuously winding a long flexible substrate through a cooling drum. 50 on the surface of the cooling drum
Height of 50 nm or more and 500 nm within an area of μm × 50 μm
One or more of the following protrusions or depressions are formed.
【００１１】[0011]
【発明の実施の形態】本発明では、フレキシブル基体表
面に例えば、Ｃｏ−Ｏ磁性膜などをベーパーディポジシ
ョン法で連続的に成膜した磁気テープにおいて、磁性膜
上に硬質保護膜を、冷却ドラムを介して連続的に巻き取
りながらプラズマＣＶＤ法によって成膜するに際して、
冷却ドラム表面を均質に粗して、基体フィルムと冷却ド
ラムの接触状態を部分部分で不均質にすることによって
成膜温度を不均質にする。BEST MODE FOR CARRYING OUT THE INVENTION In the present invention, in a magnetic tape in which, for example, a Co—O magnetic film or the like is continuously formed on the surface of a flexible substrate by a vapor deposition method, a hard protective film is formed on the magnetic film and a cooling drum is used. When forming a film by the plasma CVD method while continuously winding it through
The surface of the cooling drum is uniformly roughened so that the contact state between the substrate film and the cooling drum is made non-uniform in some parts to make the film forming temperature non-uniform.
【００１２】プラズマＣＶＤにおける成膜速度は、膜の
付着と再蒸発のバランスで決まる。成膜温度の高い部分
では再蒸発速度が速くなり、成膜速度が遅くなる。成膜
温度の低い部分では成膜速度が速くなる。この結果、硬
質保護膜膜厚が不均一化する。The deposition rate in plasma CVD is determined by the balance between film deposition and re-evaporation. The re-evaporation rate becomes faster and the film formation rate becomes slower in the portion where the film formation temperature is higher. The film forming speed is high in the portion where the film forming temperature is low. As a result, the thickness of the hard protective film becomes uneven.
【００１３】この方法によれば、基体表面が平滑なため
に欠陥の少ない良質の磁性膜が成膜され、その上に膜厚
が不均質な硬質保護膜が成膜されるため、貼り付きもな
く、良好な走行性を維持する。冷却ドラム表面を均質に
粗す方法としては、直径１００ｎｍ〜１０００ｎｍの球
状微粒子を分散させた高分子塗膜で覆うことによって実
現した。球状微粒子としては、ＳｉＯ2 、Ｃ、Ａｌ2 Ｏ
3 、ベンガラなどが用いられる。According to this method, a good quality magnetic film with few defects is formed because the surface of the substrate is smooth, and a hard protective film having an inhomogeneous film thickness is formed on the magnetic film. And maintain good runnability. A method of uniformly roughening the surface of the cooling drum was realized by covering with a polymer coating film in which spherical fine particles having a diameter of 100 nm to 1000 nm were dispersed. The spherical fine particles include SiO 2 , C, and Al 2 O.
3 , red iron oxide, etc. are used.
【００１４】本発明に使用できる磁性材料としては、Ｃ
ｏ−Ｏ、Ｃｏ−Ｎｉ、Ｃｏ−Ｃｒ、Ｃｏ−Ｆｅ、Ｃｏ−
Ｎｉ−Ｃｒ、Ｃｏ−Ｐｔ−Ｃｒなどが好ましい材料とし
て挙げられる。本発明に使用できる非磁性基体として
は、ポリエチレン、ポリプロピレン、ポリエチレンテレ
フタレート、ポリエチレンナフタレート、ポリアラミ
ド、ポリイミド、ポリフェニレンサリファイドなどが好
ましい材料として挙げられる。The magnetic material that can be used in the present invention is C
o-O, Co-Ni, Co-Cr, Co-Fe, Co-
Ni-Cr, Co-Pt-Cr, etc. are mentioned as a preferable material. Preferred examples of the non-magnetic substrate that can be used in the present invention include polyethylene, polypropylene, polyethylene terephthalate, polyethylene naphthalate, polyaramid, polyimide, and polyphenylene sulfide.
【００１５】硬質保護膜としては、プラズマカーボン
膜、ＳｉＯｘ、ＳｉＣ、Ｂ、Ｓｉが候補として挙げられ
るが、プラズマカーボン膜、その中でもダイヤモンドラ
イクカーボン膜（以後ＤＬＣと略す）が特に賞用され
る。As the hard protective film, plasma carbon film, SiOx, SiC, B and Si can be cited as candidates, but a plasma carbon film, among them, a diamond-like carbon film (hereinafter abbreviated as DLC) is particularly preferred.
【００１６】また保護膜としてプラズマカーボン膜を形
成するときには、キャリアガスとしてはメタン、エタ
ン、エチレン、アセチレン、ブタン、ベンゼンなどの炭
化水素ガスからなるモノマーガスとアルゴン、ヘリウ
ム、ネオン、クリプトン、キセノン、ラドン、窒素、水
素、一酸化炭素、二酸化炭素などのキャリアガスが所定
の割合で供給される。なお、基板上にプラズマカーボン
膜が成膜できるならば、どのようなガス導入法、ガス種
を用いても構わない。When a plasma carbon film is formed as a protective film, a carrier gas is a monomer gas composed of a hydrocarbon gas such as methane, ethane, ethylene, acetylene, butane, and benzene, and argon, helium, neon, krypton, xenon, Carrier gas such as radon, nitrogen, hydrogen, carbon monoxide and carbon dioxide is supplied at a predetermined ratio. Any gas introduction method and gas species may be used as long as the plasma carbon film can be formed on the substrate.
【００１７】以下、図面に基づいて本発明の内容をさら
に詳細に説明する。図１は本発明の実施形態に係る磁気
記録媒体の断面図、図２はその磁気記録媒体を製造する
ためのプラズマＣＶＤ装置の概略構成図、図３は前記磁
気記録媒体の一部拡大断面図である。The contents of the present invention will be described below in more detail with reference to the drawings. 1 is a sectional view of a magnetic recording medium according to an embodiment of the present invention, FIG. 2 is a schematic configuration diagram of a plasma CVD apparatus for manufacturing the magnetic recording medium, and FIG. 3 is a partially enlarged sectional view of the magnetic recording medium. Is.
【００１８】図１において、１は基体、２は磁性膜、３
はＤＬＣからなる保護膜、４はバックコート層を示す。
また図２において、５は回転ドラム、６は巻取ローラ、
７は供給ローラ、８は中間ローラ、９はガス導入口、１
０はマイクロ波リニアアプリケータ、１１はマッチング
ボックス、１２は高周波電源、１３は搬送室、１４は成
膜室、１５は中間室をそれぞれ示す。また図３におい
て、Ｌ１は最大保護膜厚、Ｌ３は最小保護膜厚、Ｌ２は
最大保護膜厚Ｌ１と最小保護膜厚Ｌ３の膜厚差（Ｌ１−
Ｌ３）である。In FIG. 1, 1 is a substrate, 2 is a magnetic film, 3
Indicates a protective film made of DLC, and 4 indicates a back coat layer.
In FIG. 2, 5 is a rotary drum, 6 is a take-up roller,
7 is a supply roller, 8 is an intermediate roller, 9 is a gas inlet, 1
Reference numeral 0 is a microwave linear applicator, 11 is a matching box, 12 is a high frequency power source, 13 is a transfer chamber, 14 is a film forming chamber, and 15 is an intermediate chamber. In FIG. 3, L1 is the maximum protective film thickness, L3 is the minimum protective film thickness, L2 is the film thickness difference between the maximum protective film thickness L1 and the minimum protective film thickness L3 (L1-
L3).
【００１９】まず、一般的に用いられている方法で長尺
幅広の基体１上にＣｏ−Ｏからなる磁性膜２を成膜し
た。基体１としてはポリエチレンナフタレートを用い
た。磁性膜２を形成した基体１に、図２のプラズマＣＶ
Ｄ装置でＤＬＣ保護膜３を形成する。前述の磁性膜付基
体１は供給ローラ７から連続的に繰り出し、所定の速度
で回転する冷却状態の回転ドラム５の周面を通して成膜
を行い、巻取ローラ６に順次巻き取る。供給ローラ７、
回転ドラム５、巻取ローラ６の間にはガイド用に数本の
中間ローラ８がある。これら中間ローラ８は高周波的に
アースから絶縁されている。First, a magnetic film 2 made of Co-O was formed on a long and wide substrate 1 by a commonly used method. Polyethylene naphthalate was used as the substrate 1. The plasma CV of FIG. 2 is formed on the substrate 1 on which the magnetic film 2 is formed.
The DLC protective film 3 is formed by the D device. The above-described magnetic film-coated substrate 1 is continuously fed from the supply roller 7, formed into a film through the peripheral surface of the rotating drum 5 which is in a cooling state and rotated at a predetermined speed, and is successively wound around the winding roller 6. Supply roller 7,
Between the rotary drum 5 and the winding roller 6, there are several intermediate rollers 8 for guiding. These intermediate rollers 8 are insulated from the ground in a high frequency manner.
【００２０】図２のガス導入口９からはＣＨ4 の炭化水
素ガスからなるモノマーガス、及びＨ2 のキャリアガス
が所定の割合で供給される。これらのガスは、マイクロ
波リニアアプリケータ１０から印加されるマイクロ波
（ＭＷ）によりプラズマ状態に保たれ、搬送される磁性
膜付基体１の磁性膜表面にプラズマＣＶＤ膜が連続的に
形成される。From the gas inlet 9 shown in FIG. 2, a monomer gas consisting of a hydrocarbon gas of CH 4 and a carrier gas of H 2 are supplied at a predetermined ratio. These gases are kept in a plasma state by the microwave (MW) applied from the microwave linear applicator 10, and a plasma CVD film is continuously formed on the surface of the magnetic film of the magnetic film-attached substrate 1 being conveyed. .
【００２１】回転ドラム５にはマッチングボックス１１
を介して高周波電源１２によって自己バイアス電圧が加
えられ、磁性膜２上に連続して幅広で均質なプラズマＣ
ＶＤ膜が形成される。成膜時の基体１の搬送系のある搬
送室１３と成膜を行う成膜室１４の真空度は独立に制御
が可能であり、搬送室１３はプラズマの発生しない高真
空に保たれる。The rotating drum 5 has a matching box 11
A high-frequency power source 12 applies a self-bias voltage to the magnetic film 2 so that a continuous and uniform plasma C is formed on the magnetic film 2.
A VD film is formed. The degree of vacuum in the transfer chamber 13 in which the transfer system for the substrate 1 is formed during film formation and the film formation chamber 14 in which film formation is performed can be controlled independently, and the transfer chamber 13 is maintained in a high vacuum in which plasma is not generated.
【００２２】次の表１に、厚さ６．４μｍのポリエチレ
ンテレフタレートフィルム上に形成した厚さ０．１５μ
ｍの斜め蒸着Ｃｏ−Ｏ磁性膜を用いて、マイクロ波の周
波数を２．４５ＧＨｚ、投入電力１．５ｋＷ、導入ガス
をメタンとアルゴンの導入割合３：１、搬送室１３の真
空度を５×１０-5Ｔｏｒｒ、成膜室１２の真空度を０．
０３Ｔｏｒｒ、の条件でＤＬＣ保護膜３の成膜を行った
ときの各種成膜条件と硬質保護膜の膜厚減少比率（Ｌ２
／Ｌ１）×１００〔％〕を示す。In Table 1 below, a thickness of 0.15 μm formed on a polyethylene terephthalate film having a thickness of 6.4 μm.
Using a diagonally evaporated Co—O magnetic film of m, the microwave frequency was 2.45 GHz, the input power was 1.5 kW, the introduction gas was methane and argon at an introduction ratio of 3: 1, and the vacuum degree of the transfer chamber 13 was 5 ×. 10 −5 Torr, the degree of vacuum in the film forming chamber 12 is 0.
When the DLC protective film 3 is formed under the conditions of 03 Torr, various film forming conditions and the film thickness reduction ratio of the hard protective film (L2
/ L1) × 100 [%] is shown.
【００２３】ただし、硬質保護膜の最大保護膜厚Ｌ１は
８ｎｍと一定とした。前述のようにＬ１は硬質保護膜の
最大保護膜厚、Ｌ３は最小保護膜厚、Ｌ２は最大保護膜
厚Ｌ１と最小保護膜厚Ｌ３の膜厚差（Ｌ１−Ｌ３）であ
る（図３参照）。However, the maximum protective film thickness L1 of the hard protective film was kept constant at 8 nm. As described above, L1 is the maximum protective film thickness of the hard protective film, L3 is the minimum protective film thickness, and L2 is the film thickness difference (L1-L3) between the maximum protective film thickness L1 and the minimum protective film thickness L3 (see FIG. 3). ).
【００２４】[0024]
【表１】
また次の表２に、各試料の摩擦特性と記録再生特性を示
す。なお、表面粗度Ｒａはランクテーラーホブソン株式
会社製タリステップを用いて測定した。ピン摺動はＤＶ
Ｃ（シャープＤＣ３）用のピンと１／４インチにスリッ
トしたテープを用いて、２ｍ／ｍｉｎの走行速度で動摩
擦係数を測定した。記録再生特性は市販のＤＶＣデッキ
（シャープＤＣ３）を、出力を取り出せるように改造し
て測定した。[Table 1] The following Table 2 shows the friction characteristics and recording / reproducing characteristics of each sample. The surface roughness Ra was measured using a Tally Step manufactured by Rank Taylor Hobson Co., Ltd. Pin sliding is DV
Using a pin for C (Sharp DC3) and a tape slit to 1/4 inch, the coefficient of dynamic friction was measured at a running speed of 2 m / min. The recording / reproducing characteristics were measured by modifying a commercially available DVC deck (Sharp DC3) so that the output could be taken out.
【００２５】[0025]
【表２】
この表１ならびに表２から明らかなように、
（１）試料Ｎｏ．１からＮｏ．４のものは、基板が超平
滑で硬質保護膜膜厚比が大きいため、ピン摺動摩擦係数
が低く、記録再生特性も良好である。
（２）試料Ｎｏ．５のものは、冷却ドラム表面の球状粒
子が小さいため、硬質保護膜膜厚減少比が小さく、貼り
付きが生じてピン摺動摩擦係数が高い。
（３）試料Ｎｏ．６のものは、冷却ドラム表面の球状粒
子が大き過ぎるため、基板が球状粒子の形に変形してＣ
／Ｎが低い。
（４）試料Ｎｏ．７のものは、冷却ドラム表面の球状粒
子密度が低いため、貼り付きが生じてピン摺動摩擦係数
が高い。
（５）試料Ｎｏ．８のものは、基体表面粗度が粗いため
磁気特性が劣化し、ヘッド−媒体間スペーシングも広く
なるためＣ／Ｎが低い。[Table 2] As is clear from Table 1 and Table 2, (1) Sample No. 1 to No. In No. 4, since the substrate is ultra-smooth and the hard protective film thickness ratio is large, the pin sliding friction coefficient is low and the recording / reproducing characteristics are good. (2) Sample No. In No. 5, since the spherical particles on the surface of the cooling drum are small, the reduction ratio of the hard protective film thickness is small, and sticking occurs, and the pin sliding friction coefficient is high. (3) Sample No. In No. 6, since the spherical particles on the surface of the cooling drum are too large, the substrate is deformed into the shape of spherical particles and C
/ N is low. (4) Sample No. In No. 7, since the spherical particle density on the surface of the cooling drum is low, sticking occurs and the pin sliding friction coefficient is high. (5) Sample No. No. 8 has a low C / N ratio because the substrate surface roughness is rough and thus the magnetic properties are deteriorated and the head-medium spacing is wide.
【発明の効果】以上の結果から明らかなように、基体表
面を超平滑として硬質保護膜厚の一部を薄くして、その
膜厚差を保護膜厚の３０％以上とすることにより、実用
化レベルでの記録密度向上を図ることが可能な磁気記録
媒体及びその製造方法ならびに製造装置を提供すること
ができる。As is clear from the above results, the surface of the substrate is made to be ultra-smooth, a part of the hard protective film is thinned, and the film thickness difference is 30% or more of the protective film. It is possible to provide a magnetic recording medium capable of improving the recording density at a high level, a manufacturing method thereof, and a manufacturing apparatus.
【図１】本発明の磁気記録媒体の断面図である。FIG. 1 is a sectional view of a magnetic recording medium of the present invention.
【図２】本発明を実施するための連続プラズマＣＶＤ装
置の概略構成図である。FIG. 2 is a schematic configuration diagram of a continuous plasma CVD apparatus for carrying out the present invention.
【図３】本発明の磁気記録媒体の一部拡大断面図であ
る。FIG. 3 is a partially enlarged sectional view of a magnetic recording medium of the present invention.
１ 基体 ２ 磁性膜 ３ 保護膜 ４ バックコート層 ５ 回転ドラム ６ 巻取ローラ ７ 供給ローラ ８ 中間ローラ ９ ガス導入口 １０ マイクロ波リニアアプリケータ １１ マッチングボックス １２ 高周波電源 １３ 搬送室 １４ 成膜室 １５ 中間室 Ｌ１ 硬質保護膜の最大保護膜厚 Ｌ２ 硬質保護膜の最大保護膜厚と最小保護膜厚の差 Ｌ３ 硬質保護膜の最小保護膜厚 1 base 2 Magnetic film 3 protective film 4 Back coat layer 5 rotating drums 6 winding roller 7 Supply roller 8 Intermediate roller 9 gas inlet 10 Microwave linear applicator 11 Matching Box 12 High frequency power supply 13 Transport room 14 Deposition chamber 15 Intermediate room Maximum protective film thickness of L1 hard protective film Difference between the maximum and minimum protective film thickness of L2 hard protective film L3 Hard protective film minimum protective film thickness
───────────────────────────────────────────────────── フロントページの続き (72)発明者 矢野 亮 大阪府茨木市丑寅一丁目１番88号 日立マ クセル株式会社内 Ｆターム(参考） 4K030 BA27 CA07 CA17 FA01 KA26 LA19 5D006 AA01 AA05 DA02 EA03 FA05 FA09 5D112 AA07 AA24 BC05 FA10 FB25 GA15 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Ryo Yano Hitachima, 1-88, Torora, Ibaraki City, Osaka Prefecture Within Kucsel Co., Ltd. F-term (reference) 4K030 BA27 CA07 CA17 FA01 KA26 LA19 5D006 AA01 AA05 DA02 EA03 FA05 FA09 5D112 AA07 AA24 BC05 FA10 FB25 GA15
Claims (6)
下の金属薄膜からなる磁性膜、厚さ２０ｎｍ以下の硬質
保護膜を順次設けた磁気記録媒体において、前記フレキ
シブル基板の表面粗度Ｒａが２ｎｍ以下で、かつ前記硬
質保護膜の最大膜厚をＬ１、最小膜厚をＬ３、最大膜厚
と最小膜厚の差をＬ２としたときの（Ｌ２／Ｌ１）×１
００≧３０％で、Ｌ３≧０．００１ｎｍであることを特
徴とする磁気記録媒体。1. A magnetic recording medium in which a magnetic film made of a metal thin film having a thickness of 0.2 μm or less and a hard protective film having a thickness of 20 nm or less are sequentially provided on a flexible substrate, and the surface roughness Ra of the flexible substrate is 2 nm. (L2 / L1) × 1 below, where L1 is the maximum film thickness of the hard protective film, L3 is the minimum film thickness, and L2 is the difference between the maximum film thickness and the minimum film thickness.
A magnetic recording medium, wherein 00 ≧ 30% and L3 ≧ 0.001 nm.
前記硬質保護膜がプラズマカーボン膜であることを特徴
とする磁気記録媒体。2. The magnetic recording medium according to claim 1,
A magnetic recording medium, wherein the hard protective film is a plasma carbon film.
を介して連続的に巻き取りながら硬質保護膜をプラズマ
ＣＶＤ法によって成膜する磁気記録媒体の製造方法にお
いて、前記冷却ドラム表面の５０μｍ×５０μｍの面積
内に高さ５０ｎｍ以上５００ｎｍ以下の１個以上の突起
または窪みを形成することを特徴とする磁気記録媒体の
製造方法。3. A method of manufacturing a magnetic recording medium, wherein a hard protective film is formed by a plasma CVD method while continuously winding a long flexible substrate through a cooling drum, and the surface of the cooling drum is 50 μm × 50 μm. A method for manufacturing a magnetic recording medium, characterized in that one or more protrusions or depressions having a height of 50 nm or more and 500 nm or less are formed in the area of the above.
において、前記硬質保護膜がプラズマカーボン膜である
ことを特徴とする磁気記録媒体の製造方法。4. The method of manufacturing a magnetic recording medium according to claim 3, wherein the hard protective film is a plasma carbon film.
を介して連続的に巻き取りながら硬質保護膜をプラズマ
ＣＶＤ法によって成膜する磁気記録媒体の製造装置にお
いて、前記冷却ドラム表面に５０μｍ×５０μｍの面積
内に高さ５０ｎｍ以上５００ｎｍ以下の１個以上の突起
または窪みが形成されていることを特徴とする磁気記録
媒体の製造装置。5. A magnetic recording medium manufacturing apparatus in which a hard protective film is formed by a plasma CVD method while continuously winding a long flexible substrate through a cooling drum, and the surface of the cooling drum is 50 μm × 50 μm. 1. An apparatus for manufacturing a magnetic recording medium, characterized in that one or more protrusions or depressions having a height of 50 nm or more and 500 nm or less are formed in the area.
において、前記硬質保護膜がプラズマカーボン膜である
ことを特徴とする磁気記録媒体の製造装置。6. The apparatus for manufacturing a magnetic recording medium according to claim 5, wherein the hard protective film is a plasma carbon film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001251547A JP2003059033A (en) | 2001-08-22 | 2001-08-22 | Magnetic recording medium and its manufacturing method and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001251547A JP2003059033A (en) | 2001-08-22 | 2001-08-22 | Magnetic recording medium and its manufacturing method and device |
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| Publication Number | Publication Date |
|---|---|
| JP2003059033A true JP2003059033A (en) | 2003-02-28 |
Family
ID=19080173
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001251547A Withdrawn JP2003059033A (en) | 2001-08-22 | 2001-08-22 | Magnetic recording medium and its manufacturing method and device |
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| Country | Link |
|---|---|
| JP (1) | JP2003059033A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006080360A (en) * | 2004-09-10 | 2006-03-23 | Toppan Printing Co Ltd | Membrane mask and its manufacturing method |
| JP2006169585A (en) * | 2004-12-16 | 2006-06-29 | Toppan Printing Co Ltd | Method for producing conductive gas barrier stacked body |
-
2001
- 2001-08-22 JP JP2001251547A patent/JP2003059033A/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006080360A (en) * | 2004-09-10 | 2006-03-23 | Toppan Printing Co Ltd | Membrane mask and its manufacturing method |
| JP4655558B2 (en) * | 2004-09-10 | 2011-03-23 | 凸版印刷株式会社 | Membrane mask and manufacturing method thereof |
| JP2006169585A (en) * | 2004-12-16 | 2006-06-29 | Toppan Printing Co Ltd | Method for producing conductive gas barrier stacked body |
| JP4525330B2 (en) * | 2004-12-16 | 2010-08-18 | 凸版印刷株式会社 | Method for producing conductive gas barrier laminate |
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