JP2003051491A - Electrode plate for plasma-etching apparatus - Google Patents
Electrode plate for plasma-etching apparatusInfo
- Publication number
- JP2003051491A JP2003051491A JP2001236064A JP2001236064A JP2003051491A JP 2003051491 A JP2003051491 A JP 2003051491A JP 2001236064 A JP2001236064 A JP 2001236064A JP 2001236064 A JP2001236064 A JP 2001236064A JP 2003051491 A JP2003051491 A JP 2003051491A
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- Japan
- Prior art keywords
- electrode plate
- electrode
- plasma
- etching apparatus
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Plasma Technology (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、電極板と被エッ
チング物との間の空間に均一な密度のプラズマを発生さ
せ、それによって被エッチング物の均一なエッチングを
行うプラズマエッチング装置用電極板に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrode plate for a plasma etching apparatus, which generates a plasma having a uniform density in a space between an electrode plate and an object to be etched, thereby uniformly etching the object to be etched. It is a thing.
【０００２】[0002]
【従来の技術】一般に、半導体集積回路を製造する際
に、ウエハをエッチングする必要があるが、このウエハ
をエッチングするための装置として、プラズマエッチン
グ装置が用いられている。このプラズマエッチング装置
には図６の断面図に示されるようにシールドリング１２
に電極板２の外周部が支持されて取り付けられており、
この電極板２は単結晶シリコン、多結晶シリコンまたは
柱状晶シリコンなどの均一な厚さの板からなり、図５の
断面図に示されるように板厚方向に平行に微細な径のシ
ャワー穴５が多数設けられた構造になっている。図６に
示されるように、プラズマエッチング装置には真空チャ
ンバー８内に電極板２および上下動可能な架台３が間隔
をおいて設けられており、電極板２は絶縁体１３により
真空チャンバー８と絶縁されている。架台３の上には静
電チャック９が設けられており、静電チャック９の上に
フォーカスリング１と共にウエハ４を載置し、エッチン
グガス７を拡散部材１１を通したのち電極板２に設けら
れたシャワー穴５を通してウエハ４に向って流しながら
高周波電源６により電極板２と架台３の間に高周波電圧
を印加することができるようになっている。2. Description of the Related Art Generally, it is necessary to etch a wafer when manufacturing a semiconductor integrated circuit, and a plasma etching apparatus is used as an apparatus for etching the wafer. As shown in the cross-sectional view of FIG. 6, this plasma etching apparatus has a shield ring 12
The outer periphery of the electrode plate 2 is supported and attached to
The electrode plate 2 is made of a plate of uniform thickness such as single crystal silicon, polycrystalline silicon or columnar crystal silicon, and as shown in the cross-sectional view of FIG. It has a structure in which many are provided. As shown in FIG. 6, in the plasma etching apparatus, an electrode plate 2 and a vertically movable mount 3 are provided at intervals in a vacuum chamber 8, and the electrode plate 2 is separated from the vacuum chamber 8 by an insulator 13. It is insulated. An electrostatic chuck 9 is provided on the pedestal 3, and the wafer 4 is placed together with the focus ring 1 on the electrostatic chuck 9 and the etching gas 7 is provided on the electrode plate 2 after passing through the diffusion member 11. A high frequency voltage can be applied between the electrode plate 2 and the pedestal 3 by a high frequency power source 6 while flowing toward the wafer 4 through the shower hole 5 provided.
【０００３】エッチングガス７を高周波電圧が印加され
た状態のプラズマエッチング装置に供給すると、エッチ
ングガス７は拡散部材１１を通り、さらに電極板２に設
けられたシャワー穴５を通って電極板２と架台３の間の
空間に供給され、そこでプラズマ１０が発生し、このプ
ラズマ１０によるスパッタリングすなわち物理反応と、
シリコン−エッチングガス７による化学反応とにより、
ウエハ４の表面がエッチングされる。When the etching gas 7 is supplied to the plasma etching apparatus to which a high frequency voltage is applied, the etching gas 7 passes through the diffusion member 11 and further through the shower hole 5 provided in the electrode plate 2 to the electrode plate 2. The plasma 10 is supplied to the space between the gantry 3 and the plasma 10 is generated there.
Silicon-the chemical reaction with the etching gas 7
The surface of the wafer 4 is etched.
【０００４】[0004]
【発明が解決しようとする課題】かかる従来のプラズマ
エッチング装置で発生するプラズマは、中心部で密度が
濃く、周辺部で薄く、そのために、エッチングされたウ
エハの断面図である図７に示されるように、ウエハ４の
中央部は最も深くエッチングされ、一方、外周部は最も
浅くエッチングされてウエハの中央部と周辺部のエッチ
ング深さに差が発生する。図７はエッチングされたウエ
ハ４のエッチング深さを中央部と周辺部とに差があるこ
とを模型的に示したもので、エッチング深さを正確に示
したものではないが、中央部ほどエッチング深さが深く
なる傾向は長時間プラブマエッチングを行なうほど顕著
になる。The plasma generated by such a conventional plasma etching apparatus has a high density in the central portion and is thin in the peripheral portion, and as a result, it is shown in FIG. 7 which is a sectional view of an etched wafer. As described above, the central portion of the wafer 4 is deepestly etched, while the outer peripheral portion is shallowestly etched, resulting in a difference in etching depth between the central portion and the peripheral portion of the wafer. FIG. 7 is a model showing that the etching depth of the etched wafer 4 is different between the central portion and the peripheral portion. The etching depth is not shown accurately, but the etching depth is closer to the central portion. The tendency that the depth becomes deep becomes more remarkable as the plasma etching is performed for a long time.
【０００５】[0005]
【課題を解決するための手段】そこで、本発明者等は、
これらの課題を解決すべく研究を行った。その結果、電
極板をプラズマエッチング装置にセットした場合に、ウ
エハに対向する電極板の面が中心部に向かって傾斜して
いる傾斜面を有する電極板を作製し、これをプラズマエ
ッチング装置にセットしてプラズマエッチングを行う
と、電極板とウエハとの間の間隔が外周部に向かうほど
狭くなり、外周部におけるプラズマ密度が濃くなって空
間全体にわたって均一なプラズマ密度を発生させること
ができ、したがってウエハのエッチングを均一に行うこ
とができるという知見を得たのである。Therefore, the present inventors have
Research was conducted to solve these problems. As a result, when the electrode plate is set in the plasma etching apparatus, an electrode plate having an inclined surface in which the surface of the electrode plate facing the wafer is inclined toward the center is produced and set in the plasma etching apparatus. When the plasma etching is performed in this manner, the distance between the electrode plate and the wafer becomes narrower toward the outer peripheral portion, and the plasma density at the outer peripheral portion becomes higher, so that a uniform plasma density can be generated over the entire space. We have found that the wafer can be uniformly etched.
【０００６】この発明は、かかる知見に基づいてなされ
たものであって、図１に示されるように、（１）電極板
の上面に対して平行な面からなり電極板の下面外周部に
設けられた電極支持部分１９と、この電極支持部分１９
の内周端１７から中心部に向かって電極板の厚さが薄く
なるように傾斜している傾斜面１４を有するプラズマエ
ッチング装置用電極板、に特徴を有するものである。The present invention has been made on the basis of such knowledge, and as shown in FIG. 1, (1) it is provided on the outer peripheral portion of the lower surface of the electrode plate, the surface being parallel to the upper surface of the electrode plate. The electrode supporting part 19 and the electrode supporting part 19
The electrode plate for a plasma etching apparatus having an inclined surface 14 that is inclined from the inner peripheral end 17 toward the center so that the thickness of the electrode plate becomes thinner.
【０００７】電極板の外周部は、図６に示されるよう
に、シールドリング１２などにより支持されてセットさ
れる。したがって、この発明の電極板の最外周部には上
面に対して平行な面からなる電極支持部分１９を設ける
必要があり、傾斜面１４は電極支持部分１９の内周端か
ら中心に向かって傾斜して設けられることが必要であ
る。As shown in FIG. 6, the outer peripheral portion of the electrode plate is supported and set by a shield ring 12 or the like. Therefore, it is necessary to provide the electrode support portion 19 composed of a plane parallel to the upper surface on the outermost peripheral portion of the electrode plate of the present invention, and the inclined surface 14 is inclined from the inner peripheral end of the electrode support portion 19 toward the center. It is necessary to be provided.
【０００８】この発明の中心部に向かって厚さが薄くな
るように傾斜している傾斜面を有する電極板の他の実施
例を図２〜図４の断面図に示す。図２は電極支持部分１
９の内周端１７から中心に向かって厚さが薄くなるよう
に傾斜している傾斜角度の異なった複数の傾斜面１６お
よび１６´を有するこの発明の電極板２１の実施例を示
し、図３はこの発明の最内周端から中心に向かって厚さ
が薄くなるように傾斜している傾斜面１４および傾斜面
１４の内側に設けられた内部平面１８を有するこの発明
の電極板２２の実施例を示し、さらに図４は最内周端か
ら中心に向かって厚さが薄くなるようにすり鉢状に傾斜
している断面が曲線を描く傾斜面１５および傾斜面１５
の内側に設けられた内部平面１８を有するこの発明の電
極板２３の実施例を示している。しかし、この発明の電
極板に設けられている傾斜面はこれらに限定されるもの
ではない。Another embodiment of an electrode plate having an inclined surface which is inclined so that its thickness becomes thinner toward the center of the present invention is shown in the sectional views of FIGS. FIG. 2 shows the electrode supporting portion 1
9 shows an embodiment of the electrode plate 21 of the present invention having a plurality of inclined surfaces 16 and 16 'having different inclination angles which are inclined from the inner peripheral edge 17 of 9 toward the center, and 3 is an electrode plate 22 of the present invention having an inclined surface 14 inclined so that the thickness decreases from the innermost peripheral end of the present invention toward the center, and an internal flat surface 18 provided inside the inclined surface 14. FIG. 4 shows an embodiment, and FIG. 4 further shows an inclined surface 15 and an inclined surface 15 in which a cross section inclining in a mortar shape such that the thickness decreases from the innermost peripheral end toward the center draws a curve.
3 shows an embodiment of an electrode plate 23 of the present invention having an internal flat surface 18 provided inside the. However, the inclined surface provided on the electrode plate of the present invention is not limited to these.
【０００９】[0009]
【発明の実施の形態】直径：２８０ｍｍの単結晶シリコ
ンインゴットを用意し、このインゴットをダイヤモンド
ハンドソーにより厚さ：５ｍｍに輪切り切断し、輪切り
切断した単結晶シリコン円板を作製し、この単結晶に内
径：２００ｍｍのシャワー穴を形成して上下面とも平面
からなる外径：２８０ｍｍを有する図５に示される従来
電極板を作製した。BEST MODE FOR CARRYING OUT THE INVENTION A single crystal silicon ingot having a diameter of 280 mm is prepared, and this ingot is sliced into a slice of 5 mm with a diamond hand saw to prepare a sliced single crystal silicon disc. A conventional electrode plate shown in FIG. 5 having a shower hole having an inner diameter of 200 mm and an outer diameter of 280 mm in which both upper and lower surfaces are flat was prepared.
【００１０】さらに、この外径：２８０ｍｍを有する単
結晶シリコン円板の外周に幅：４０ｍｍのリング状平面
からなる電極支持部分１９を形成し、その内側に、電極
支持部分１９の内周端１７から中心に向かって傾斜して
いる傾斜面の断面傾斜線が直線状の傾斜面１４を有する
図１に示される本発明電極板１、電極支持部分１９の内
周端１７から中心に向かって異なった傾斜角度で傾斜し
ている傾斜面の断面傾斜線が折れ線状の傾斜面１６、１
６´を有する図２に示される本発明電極板２、電極支持
部分１９の内周端１７から中心に向かって傾斜している
傾斜面の断面傾斜線が直線状の傾斜面１４とこの傾斜面
１４の内側に直径：１２０ｍｍの円形の内部平面１８を
有する図３に示される本発明電極板３、電極支持部分１
９の内周端１７から中心に向かって傾斜している傾斜面
の断面が曲線状の傾斜面１５とこの傾斜面１５の内側に
直径：１２０ｍｍの内部１８平面を有する図４に示され
る本発明電極板４、をそれぞれ作製した。Further, an electrode supporting portion 19 consisting of a ring-shaped flat surface having a width of 40 mm is formed on the outer periphery of the single crystal silicon disk having the outer diameter of 280 mm, and the inner peripheral end 17 of the electrode supporting portion 19 is formed inside thereof. From the inner peripheral end 17 of the electrode supporting portion 19 of the electrode plate 1 of the present invention shown in FIG. 1 having a linear inclined surface 14 to the center. The inclined planes 16 and 1 each have a polygonal cross-sectional inclined line that is inclined at a different inclination angle.
The electrode plate 2 of the present invention shown in FIG. 2 having 6 ′, the inclined surface 14 having a linear cross-sectional inclination line of the inclined surface inclined from the inner peripheral end 17 of the electrode supporting portion 19 toward the center, and the inclined surface. The electrode plate 3 according to the invention as shown in FIG. 3, which has a circular inner plane 18 with a diameter of 120 mm inside 14 and the electrode support part 1.
The present invention shown in FIG. 4 in which an inclined surface 15 inclined from the inner peripheral end 17 of 9 to the center has a curved cross section and an inside 18 plane having a diameter of 120 mm inside the inclined surface 15. Each of the electrode plates 4 was produced.
【００１１】これら本発明電極板１〜４の寸法は、いず
れも中心部の最も薄い部分の厚さが４ｍｍとなるように
作製した。さらに、予めＣＶＤによりＳｉＯ2 層を表面
に形成したウエハを用意した。Each of the electrode plates 1 to 4 of the present invention was manufactured so that the thickness of the thinnest part in the central portion was 4 mm. Further, a wafer having a SiO 2 layer formed on its surface by CVD in advance was prepared.
【００１２】この本発明電極板１〜４および従来電極板
をそれぞれエッチング装置にセットし、さらにＳｉＯ2
層を形成したウエハをエッチング装置にセットし、
チャンバー内圧力：１０-1Ｔｏｒｒ、
エッチングガス組成：９０sccmＣＨＦ3 ＋４sccmＯ2 ＋
１５０sccmＨｅ、
高周波電力：２ｋＷ、
周波数：２０ｋＨｚ、
の条件で、ウエハ表面のＳｉＯ2 層のプラズマエッチン
グを行ない、エッチング開始から１０時間、１００時
間、２００時間、４００時間経過した時点での図７に示
されるウエハの最も深くエッチングされた中心部の深
さ：Ａを測定し、さらにウエハの最も浅くエッチングさ
れた周辺部の深さ：Ｂを測定し、このＡおよびＢの測定
値を（Ａ−Ｂ）／Ｂ×１００（％）の式に代入し求めた
値を表１示し、ウエハのエッチングの均一性を評価し
た。Each of the electrode plates 1 to 4 of the present invention and the conventional electrode plate is set in an etching apparatus, and SiO 2 is further added.
The layered wafer is set in an etching apparatus, the chamber pressure is 10 -1 Torr, the etching gas composition is 90 sccm CHF 3 +4 sccmO 2 +
Plasma etching of the SiO 2 layer on the wafer surface was carried out under the conditions of 150 sccm He, high frequency power: 2 kW, frequency: 20 kHz, and it is shown in FIG. The depth of the deepest etched central portion of the wafer: A, and the depth of the shallowest etched peripheral portion of the wafer: B are measured, and the measured values of A and B are (A-B). ) / B × 100 (%), the values obtained by substituting into the formula are shown in Table 1, and the uniformity of wafer etching was evaluated.
【００１３】[0013]
【表１】 [Table 1]
【００１４】表１に示される結果から、本発明電極板１
〜４を使用してウエハ表面のＳｉＯ 2 層をプラズマエッ
チングした結果と従来電極板を使用してウエハ表面のＳ
ｉＯ 2 層をプラズマエッチングした結果を比較すると、
４００時間プラズマエッチングしても本発明電極板１〜
４を使用してプラズマエッチングした場合の（Ａ−Ｂ）
／Ｂ×１００（％）の値は従来電極板を使用してプラズ
マエッチングした場合の（Ａ−Ｂ）／Ｂ×１００（％）
の値に比べて差が少ないところから、本発明電極板１〜
４は従来電極板よりもウエハ表面を長時間プラズマエッ
チングを行うことができることがわかる。From the results shown in Table 1, the electrode plate 1 of the present invention was obtained.
~ 4 using SiO on the wafer surface 2 Plasma etch layer
The result of the etching and the S on the wafer surface using the conventional electrode plate
iO 2 Comparing the results of plasma etching the layers,
Even after plasma etching for 400 hours, the present invention electrode plates 1 to 1
(A-B) when plasma etching is performed using 4
The value of / B x 100 (%) is the value obtained by using the conventional electrode plate
(A−B) / B × 100 (%)
From the place where the difference is small compared to the value of
No. 4 is for plasma etching on the wafer surface for a longer time than the conventional electrode plate.
It is understood that the ching can be performed.
【００１５】[0015]
【発明の効果】上述のように、この発明の電極板を使用
すると、従来よりも均一なプラズマエッチングを行うこ
とができるところから、プラズマエッチングによる半導
体集積回路の不良品発生を大幅に減らすことができ、半
導体装置産業の発展に大いに貢献しうるものである。As described above, when the electrode plate of the present invention is used, more uniform plasma etching can be performed than in the prior art, so that the production of defective semiconductor integrated circuits due to plasma etching can be significantly reduced. Therefore, it can greatly contribute to the development of the semiconductor device industry.
【図１】この発明の電極板の断面説明図である。FIG. 1 is an explanatory sectional view of an electrode plate of the present invention.
【図２】この発明の電極板の断面説明図である。FIG. 2 is a cross-sectional explanatory view of an electrode plate of the present invention.
【図３】この発明の電極板の断面説明図である。FIG. 3 is a cross-sectional explanatory view of an electrode plate of the present invention.
【図４】この発明の電極板の断面説明図である。FIG. 4 is a cross-sectional explanatory view of an electrode plate of the present invention.
【図５】従来の電極板の断面説明図である。FIG. 5 is a cross-sectional explanatory view of a conventional electrode plate.
【図６】プラズマエッチング装置の断面概略説明図であ
る。FIG. 6 is a schematic sectional view of a plasma etching apparatus.
【図７】従来の電極板を用いてプラズマエッチングした
場合のウエハのエッチング状態を説明するための断面概
略説明図である。FIG. 7 is a schematic cross-sectional explanatory view for explaining an etching state of a wafer when plasma etching is performed using a conventional electrode plate.
１ フォーカスリング ２ 電極板 ３ 架台 ４ ウエハ ５ シャワー穴 ６ 高周波電源 ７ プラズマエッチングガス ８ 真空チャンバー ９ 静電チャック １０ ブラズマ １１ 拡散部材 １２ シールドリング １３ 絶縁体 １４ 傾斜面 １５ 傾斜面 １６ 傾斜面 １６´ 傾斜面 １７ 内周端 １８ 内部平面 １９ 電極支持部分 ２０ 電極板 ２１ 電極板 ２２ 電極板 ２３ 電極板 1 Focus ring 2 electrode plates 3 mounts 4 wafers 5 shower holes 6 high frequency power supply 7 Plasma etching gas 8 vacuum chamber 9 Electrostatic chuck 10 Brasma 11 Diffusing member 12 Shield ring 13 Insulator 14 slope 15 inclined surface 16 inclined surface 16 'inclined surface 17 Inner peripheral edge 18 Internal plane 19 Electrode support part 20 electrode plate 21 electrode plate 22 Electrode plate 23 Electrode plate
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 4G075 AA24 AA30 BC02 BC06 BD14 CA12 CA47 CA65 DA01 EB01 EB41 EC21 EE01 EE02 FB02 5F004 AA01 BA06 BA07 BB11 CA02 CA03 DA16 DB03 ─────────────────────────────────────────────────── ─── Continued front page F term (reference) 4G075 AA24 AA30 BC02 BC06 BD14 CA12 CA47 CA65 DA01 EB01 EB41 EC21 EE01 EE02 FB02 5F004 AA01 BA06 BA07 BB11 CA02 CA03 DA16 DB03
Claims (2)
極板の外周部に設けられた電極支持部分と、この電極支
持部分の内周端から中心部に向かって電極板の厚さが薄
くなるように傾斜している傾斜面を有することを特徴と
するプラズマエッチング装置用電極板。1. An electrode supporting portion provided on an outer peripheral portion of the electrode plate, the electrode supporting portion having a surface parallel to an upper surface of the electrode plate, and a thickness of the electrode plate from an inner peripheral end of the electrode supporting portion toward a central portion. An electrode plate for a plasma etching apparatus, which has an inclined surface which is inclined so as to be thin.
リコンまたは柱状晶シリコンで構成されていることを特
徴とする請求項１記載のプラズマエッチング装置用電極
板。2. The electrode plate for a plasma etching apparatus according to claim 1, wherein the electrode plate is made of single crystal silicon, polycrystalline silicon or columnar crystal silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001236064A JP2003051491A (en) | 2001-08-03 | 2001-08-03 | Electrode plate for plasma-etching apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001236064A JP2003051491A (en) | 2001-08-03 | 2001-08-03 | Electrode plate for plasma-etching apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003051491A true JP2003051491A (en) | 2003-02-21 |
Family
ID=19067404
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001236064A Pending JP2003051491A (en) | 2001-08-03 | 2001-08-03 | Electrode plate for plasma-etching apparatus |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007081381A (en) * | 2005-08-18 | 2007-03-29 | Mitsubishi Materials Corp | Silicon ring for use of plasma etcher |
| CN100362632C (en) * | 2004-01-30 | 2008-01-16 | 松下电器产业株式会社 | Dry etching apparatus and dry etching method |
| JP2010541170A (en) * | 2007-10-01 | 2010-12-24 | エリコン・ソーラー・アイピー・アーゲー・トリュプバッハ | Active film deposition |
| KR20120088595A (en) * | 2011-01-31 | 2012-08-08 | 미쓰비시 마테리알 가부시키가이샤 | Silicon electrode plate for plasma etching |
| KR101664840B1 (en) * | 2015-05-29 | 2016-10-11 | 세메스 주식회사 | Apparatus for treating substrate |
| CN109752445A (en) * | 2019-03-21 | 2019-05-14 | 浙江工商大学 | Manifold type gas sensor and its detection method to para-nitrotoluene |
| CN109884166A (en) * | 2019-03-21 | 2019-06-14 | 浙江工商大学 | Have both the ionizing transducer of detection and its detection method to para-nitrotoluene |
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2001
- 2001-08-03 JP JP2001236064A patent/JP2003051491A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100362632C (en) * | 2004-01-30 | 2008-01-16 | 松下电器产业株式会社 | Dry etching apparatus and dry etching method |
| US7446048B2 (en) | 2004-01-30 | 2008-11-04 | Matsushita Electric Industrial Co., Ltd. | Dry etching apparatus and dry etching method |
| JP2007081381A (en) * | 2005-08-18 | 2007-03-29 | Mitsubishi Materials Corp | Silicon ring for use of plasma etcher |
| JP4517369B2 (en) * | 2005-08-18 | 2010-08-04 | 三菱マテリアル株式会社 | Silicon ring for plasma etching equipment |
| JP2010541170A (en) * | 2007-10-01 | 2010-12-24 | エリコン・ソーラー・アイピー・アーゲー・トリュプバッハ | Active film deposition |
| KR20120088595A (en) * | 2011-01-31 | 2012-08-08 | 미쓰비시 마테리알 가부시키가이샤 | Silicon electrode plate for plasma etching |
| KR101926859B1 (en) | 2011-01-31 | 2018-12-07 | 미쓰비시 마테리알 가부시키가이샤 | Silicon electrode plate for plasma etching |
| KR101664840B1 (en) * | 2015-05-29 | 2016-10-11 | 세메스 주식회사 | Apparatus for treating substrate |
| CN109752445A (en) * | 2019-03-21 | 2019-05-14 | 浙江工商大学 | Manifold type gas sensor and its detection method to para-nitrotoluene |
| CN109884166A (en) * | 2019-03-21 | 2019-06-14 | 浙江工商大学 | Have both the ionizing transducer of detection and its detection method to para-nitrotoluene |
| CN109752445B (en) * | 2019-03-21 | 2021-06-04 | 浙江工商大学 | Coupling type gas sensor and detection method for paranitrotoluene |
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