JP2003046124A - Light-emitting element and manufacturing method therefor - Google Patents
Light-emitting element and manufacturing method thereforInfo
- Publication number
- JP2003046124A JP2003046124A JP2001226698A JP2001226698A JP2003046124A JP 2003046124 A JP2003046124 A JP 2003046124A JP 2001226698 A JP2001226698 A JP 2001226698A JP 2001226698 A JP2001226698 A JP 2001226698A JP 2003046124 A JP2003046124 A JP 2003046124A
- Authority
- JP
- Japan
- Prior art keywords
- light
- wavelength conversion
- resin
- conversion substance
- transparent substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Led Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、発光素子及びその
製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】近年、窒化ガリウム系化合物半導体によ
る青色光、あるいは紫外線を放射するＬＥＤチップが開
発された。このＬＥＤチップを、種々の蛍光体とを組合
わせることにより、白色を含め、チップの発光色とは異
なる色合いの光を出すＬＥＤ発光装置の開発が試みられ
ている。小型、軽量、省電力といった長所があり、現
在、表示用光源、小型電球の代替、あるいは液晶パネル
用光源等として広く用いられている。2. Description of the Related Art In recent years, LED chips which emit blue light or ultraviolet rays made of gallium nitride compound semiconductor have been developed. An attempt has been made to develop an LED light emitting device that emits light having a color tone different from the light emission color of the chip, including white, by combining this LED chip with various phosphors. It has the advantages of small size, light weight, and power saving, and is currently widely used as a light source for display, a substitute for a small light bulb, a light source for liquid crystal panels, and the like.
【０００３】上記のＬＥＤにおける蛍光体部の形成方法
としては、発光素子載置部に、蛍光体を含む樹脂を充填
する方法が一般的である。As a method of forming the phosphor portion in the above LED, a method of filling the light emitting element mounting portion with a resin containing a phosphor is generally used.
【０００４】[0004]
【発明が解決しようとする課題】しかし、上記の従来技
術では、１個１個のＬＥＤ載置部に、蛍光体を含む少量
の樹脂を滴下充填し、硬化させているので、工程が煩雑
で時間を要するという問題があった。また、樹脂滴下量
を制御することが困難であり、さらに、樹脂が硬化する
時間内に、樹脂よりも比重の大きい蛍光体が沈下する傾
向がみられるが、その沈下度合いにも差異が生じやす
く、結果的に、発光部ごとの色ばらつきや光量ばらつき
が大きいという問題点があった。However, in the above-mentioned prior art, since a small amount of resin containing a phosphor is dropped and filled into each LED mounting portion and cured, the process is complicated. There was a problem that it took time. Further, it is difficult to control the amount of resin dropped, and further, within the time for the resin to harden, there is a tendency that the phosphor having a larger specific gravity than the resin tends to sink, but the degree of sinking also tends to differ. As a result, there is a problem that the color variation and the light amount variation between the light emitting units are large.
【０００５】本発明は、上記事由に鑑みてなされたもの
であり、その目的は、簡略化された工程にて蛍光体部を
製造することによって量産化を図り、製造コストを低減
するとともに、蛍光体部の品質を均一化することによっ
て、発光部ごと、製品ごとの色ばらつき、光量ばらつき
が低減された発光素子及びその製造方法を提供すること
にある。The present invention has been made in view of the above circumstances, and an object thereof is to manufacture a phosphor part in a simplified process to achieve mass production, reduce the manufacturing cost, and reduce the fluorescence. It is an object of the present invention to provide a light emitting element in which color variation and light amount variation for each light emitting portion and for each product are reduced by making the quality of the body part uniform, and a manufacturing method thereof.
【０００６】[0006]
【課題を解決するための手段】請求項１の発明は、透光
性基板と、前記透光性基板の一方の面上に積層して発光
する化合物半導体と、前記透光性基板の他方の面上に設
けられて前記化合物半導体の発光によって励起され、励
起波長と異なる波長の光を放射する波長変換物質と前記
化合物半導体または波長変換物質の発光の一部を吸収す
る光吸収体とのうち少なくとも一方を含む層とを備えた
ことを特徴とする。According to a first aspect of the present invention, there is provided a transparent substrate, a compound semiconductor which emits light by being laminated on one surface of the transparent substrate, and the other of the transparent substrate. Of the wavelength converter provided on the surface and excited by the light emission of the compound semiconductor, which emits light having a wavelength different from the excitation wavelength, and the light absorber which absorbs a part of the light emission of the compound semiconductor or the wavelength converter. And a layer containing at least one of them.
【０００７】請求項２の発明は、請求項１の発明におい
て、前記波長変換物質は蛍光体からなり、前記光吸収体
は顔料または染料からなることを特徴とする。The invention of claim 2 is characterized in that, in the invention of claim 1, the wavelength conversion substance is made of a phosphor and the light absorber is made of a pigment or a dye.
【０００８】請求項３の発明は、請求項１または２の発
明において、前記波長変換物質と光吸収体とのうち少な
くとも一方を含む層がガラスで形成されたことを特徴と
する。The invention of claim 3 is characterized in that, in the invention of claim 1 or 2, the layer containing at least one of the wavelength conversion substance and the light absorber is formed of glass.
【０００９】請求項４の発明は、請求項１または２の発
明において、前記透光性基板の他方の面を非鏡面とした
ことを特徴とする。The invention of claim 4 is characterized in that, in the invention of claim 1 or 2, the other surface of the transparent substrate is a non-mirror surface.
【００１０】請求項５の発明は、請求項１または２の発
明において、前記透光性基板の他方の面に複数個の凹部
を形成し、前記凹部内に前記波長変換物質と光吸収体と
のうち少なくとも一方を充填し、前記凹部に透光性の平
板材料を覆設したことを特徴とする。According to a fifth aspect of the present invention, in the first or second aspect of the invention, a plurality of recesses are formed on the other surface of the transparent substrate, and the wavelength conversion substance and the light absorber are provided in the recesses. At least one of the above is filled, and the translucent flat plate material is provided to cover the recess.
【００１１】請求項６の発明は、請求項１または２の発
明において、前記透光性基板の他方の面側の周端部を除
去して切削部を形成し、前記波長変換物質と光吸収体と
のうち少なくとも一方を含む層を前記切削部に設けたこ
とを特徴とする。According to a sixth aspect of the present invention, in the first or second aspect of the present invention, the peripheral portion on the other surface side of the transparent substrate is removed to form a cutting portion, and the wavelength converting substance and the light absorbing material are absorbed. It is characterized in that a layer including at least one of a body is provided in the cutting portion.
【００１２】請求項７の発明は、請求項１または２の発
明において、前記化合物半導体の周端部及び前記透光性
基板の一方の面側の周端部を除去して切削部を形成し前
記波長変換物質と光吸収体とのうち少なくとも一方を含
む層を前記切削部に設けたことを特徴とする。According to a seventh aspect of the present invention, in the first or second aspect of the present invention, the peripheral edge portion of the compound semiconductor and the peripheral edge portion on one surface side of the transparent substrate are removed to form a cut portion. A layer including at least one of the wavelength conversion substance and the light absorber is provided in the cutting portion.
【００１３】請求項８の発明は、請求項１または２の発
明において、前記波長変換物質と光吸収体とのうち少な
くとも一方を含む層において、前記透光性基板に対向す
る面の反対側の面上に光反射機能を有する薄膜を形成し
たことを特徴とする。According to an eighth aspect of the present invention, in the first or second aspect of the present invention, a layer including at least one of the wavelength conversion material and the light absorber is provided on a side opposite to a surface facing the transparent substrate. A thin film having a light reflecting function is formed on the surface.
【００１４】請求項９の発明は、請求項１または２の発
明において、前記透光性基板の他方の面上に、前記波長
変換物質と光吸収体とのうち少なくとも一方を含む層を
複数積層したことを特徴とする。According to a ninth aspect of the invention, in the first or second aspect of the invention, a plurality of layers containing at least one of the wavelength conversion substance and the light absorber are laminated on the other surface of the transparent substrate. It is characterized by having done.
【００１５】請求項１０の発明は、請求項９の発明にお
いて、前記透光性基板の屈折率は周囲に存在する封止物
質または大気の屈折率よりも大きく、前記波長変換物質
と光吸収体とのうち少なくとも一方を含む複数の層の各
屈折率は、互いに異なり、前記透光性基板の屈折率より
も小さく且つ前記周囲に存在する封止物質または大気の
屈折率よりも大きく、前記透光性基板から離れる層であ
るほど屈折率は低下することを特徴とする。According to a tenth aspect of the invention, in the invention of the ninth aspect, the refractive index of the transparent substrate is higher than the refractive index of the surrounding sealing material or the atmosphere, and the wavelength conversion material and the light absorber are present. Each of the plurality of layers including at least one of the above is different from each other, is smaller than the refractive index of the translucent substrate, and is larger than the refractive index of the sealing substance or the atmosphere present in the surroundings, It is characterized in that the refractive index decreases as the layer is separated from the optical substrate.
【００１６】請求項１１の発明は、前記透光性基板の一
方の面上に発光する化合物半導体を積層してウェハーを
形成し、前記透光性基板の他方の面上に、前記化合物半
導体の発光によって励起され、励起波長と異なる波長の
光を放射する波長変換物質と、前記化合物半導体または
波長変換物質の発光の一部を吸収する光吸収体とのうち
少なくとも一方を含む層を形成した後、前記ウェハーを
個々の素子に分割することを特徴とする。According to an eleventh aspect of the present invention, a compound semiconductor which emits light is laminated on one surface of the transparent substrate to form a wafer, and the compound semiconductor is formed on the other surface of the transparent substrate. After forming a layer containing at least one of a wavelength conversion substance that is excited by light emission and emits light having a wavelength different from the excitation wavelength, and a light absorber that absorbs a part of light emission of the compound semiconductor or the wavelength conversion substance. , The wafer is divided into individual elements.
【００１７】請求項１２の発明は、請求項１１の発明に
おいて、個々の素子に分割する前の前記ウェハーにおい
て、前記透光性基板の他方の面上に、前記波長変換物質
と光吸収体とのうち少なくとも一方を分散させた樹脂を
塗布し、スペーサを用いて前記樹脂が一定の厚みになる
ように制御しつつ、スキージで余分な前記樹脂を除去す
ることによって、前記波長変換物質と光吸収体とのうち
少なくとも一方を含む層を形成して、硬化させることを
特徴とする。According to a twelfth aspect of the invention, in the eleventh aspect of the invention, the wavelength conversion substance and the light absorber are provided on the other surface of the transparent substrate in the wafer before being divided into individual elements. Of the wavelength conversion substance and light absorption by removing at least one resin with a squeegee while controlling the resin so that the resin has a constant thickness by using a spacer It is characterized by forming a layer containing at least one of the body and curing it.
【００１８】請求項１３の発明は、請求項１１の発明に
おいて、個々の素子に分割する前の前記ウェハーにおい
て、前記透光性基板の他方の面上に、前記波長変換物質
と光吸収体とのうち少なくとも一方を含む樹脂で形成さ
れた樹脂シートを貼りつけることによって、前記波長変
換物質と光吸収体とのうち少なくとも一方を含む層を形
成することを特徴とする。According to a thirteenth aspect of the present invention, in the invention of the eleventh aspect, the wavelength conversion substance and the light absorber are provided on the other surface of the transparent substrate in the wafer before being divided into individual elements. It is characterized in that a layer containing at least one of the wavelength conversion substance and the light absorber is formed by sticking a resin sheet formed of a resin containing at least one of the above.
【００１９】請求項１４の発明は、請求項１１の発明に
おいて、個々の素子に分割する前の前記ウェハーにおい
て、前記透光性基板の他方の面に非鏡面加工を施した
後、前記波長変換物質と光吸収体とのうち少なくとも一
方を含む層を形成して、個々の素子に分割することを特
徴とする。According to a fourteenth aspect of the present invention, in the eleventh aspect of the invention, the wavelength conversion is performed after the other surface of the transparent substrate is subjected to non-mirror finishing in the wafer before being divided into individual elements. It is characterized in that a layer containing at least one of a substance and a light absorber is formed and divided into individual elements.
【００２０】請求項１５の発明は、請求項１１の発明に
おいて、個々の素子に分割する前の前記ウェハーにおい
て、前記透光性基板の他方の面上に、複数個の均一形状
をした凹部を形成し、前記波長変換物質と光吸収体との
うち少なくとも一方を前記各凹部に略同一量充填して、
前記凹部に透光性の平板材料を覆設した後、個々の素子
に分割することを特徴とする。According to a fifteenth aspect of the invention, in the invention of the eleventh aspect, in the wafer before being divided into individual elements, a plurality of recesses having a uniform shape are formed on the other surface of the transparent substrate. Formed, at least one of the wavelength conversion material and the light absorber is filled in substantially the same amount in each recess,
It is characterized in that the recess is covered with a transparent plate material and then divided into individual elements.
【００２１】請求項１６の発明は、請求項１１の発明に
おいて、個々の素子に分割する前の前記ウェハーにおい
て、前記透光性基板の他方の面側の周端部を除去して切
削部を成し、前記透光性基板の他方の面上と前記切削部
とに波長変換物質と光吸収体とのうち少なくとも一方を
含む層を形成した後、個々の素子に分割することを特徴
とする。According to a sixteenth aspect of the present invention, in the invention of the eleventh aspect, in the wafer before being divided into individual elements, the peripheral edge portion on the other surface side of the transparent substrate is removed to form a cutting portion. And forming a layer containing at least one of a wavelength conversion substance and a light absorber on the other surface of the translucent substrate and the cutting portion, and then dividing the layer into individual elements. .
【００２２】請求項１７の発明は、請求項１１の発明に
おいて、個々の素子に分割する前の前記ウェハーにおい
て、前記化合物半導体及び前記透光性基板の一方の面側
の周端部にメサエッチを施して切削部を成し、前記透光
性基板の他方の面上に前記波長変換物質と光吸収体との
うち少なくとも一方を含む層を形成して、個々の素子に
分割後、前記波長変換物質と光吸収体とのうち少なくと
も一方を含む絶縁性の樹脂を前記切削部に設けることに
より素子と実装基板との接着剤として用い、前記化合物
半導体の層を前記実装基板側に配置したフェイスダウン
状態で実装することを特徴とする。According to a seventeenth aspect of the present invention, in the eleventh aspect of the present invention, a mesa etch is applied to the peripheral edge portion of one side of the compound semiconductor and the transparent substrate in the wafer before being divided into individual devices. To form a cutting portion, form a layer containing at least one of the wavelength conversion substance and the light absorber on the other surface of the translucent substrate, and after dividing into individual elements, the wavelength conversion. A face down in which an insulating resin containing at least one of a substance and a light absorber is used as an adhesive between an element and a mounting board by providing the cutting section with the compound semiconductor layer disposed on the mounting board side. It is characterized in that it is implemented in a state.
【００２３】請求項１８の発明は、請求項１１の発明に
おいて、個々の素子に分割する前の前記ウェハーにおい
て、前記波長変換物質と光吸収体とのうち少なくとも一
方を含む層の、前記透光性基板に対向する面の反対側の
面上に光反射機能を有する薄膜を形成した後、個々の発
光素子に分割することを特徴とする。According to a eighteenth aspect of the present invention, in the eleventh aspect of the present invention, in the wafer before being divided into individual elements, the light-transmitting layer of at least one of the wavelength conversion substance and the light absorber is formed. A thin film having a light reflecting function is formed on a surface opposite to the surface facing the flexible substrate, and then divided into individual light emitting elements.
【００２４】請求項１９の発明は、請求項１１の発明に
おいて、前記波長変換物質と光吸収体との少なくとも一
方を分散させた樹脂シートを形成し、個々の素子に分割
する前の前記ウェハーにおいて、前記透光性基板の他方
の面上に複数の前記樹脂シートを積層して貼りつけた
後、個々の素子に分割することを特徴とする。According to a nineteenth aspect of the present invention, in the wafer of the eleventh aspect, the resin sheet in which at least one of the wavelength conversion material and the light absorber is dispersed is formed, and the resin sheet is not divided into individual elements. A plurality of the resin sheets are laminated and adhered on the other surface of the translucent substrate and then divided into individual elements.
【００２５】請求項２０の発明は、請求項１１の発明に
おいて、個々の素子に切断する前の前記ウェハーを基材
とし、前記透光性基板の他方の面上に前記波長変換物質
と光吸収体とのうち少なくとも一方を含む樹脂層を印刷
によって形成することを特徴とする。According to a twentieth aspect of the invention, in the eleventh aspect of the invention, the wafer before being cut into individual elements is used as a base material, and the wavelength conversion substance and the light absorption are provided on the other surface of the transparent substrate. A resin layer including at least one of the body and the body is formed by printing.
【００２６】請求項２１の発明は、請求項１３の発明に
おいて、透明樹脂で形成した樹脂シートを基材とし、前
記樹脂シート上に波長変換物質と光吸収体とのうち少な
くとも一方を含む樹脂層を印刷により形成した後、前記
透光性基板の他方の面上に前記樹脂シートを貼りつける
ことを特徴とする。According to a twenty-first aspect of the invention, in the thirteenth aspect of the invention, a resin sheet formed of a transparent resin is used as a base material, and a resin layer containing at least one of a wavelength conversion substance and a light absorber on the resin sheet. Is formed by printing, and then the resin sheet is attached to the other surface of the transparent substrate.
【００２７】請求項２２の発明は、請求項２０の発明に
おいて、前記印刷はスクリーン印刷の手法を用い、マス
クを用いて前記透光性基板の他方の面上の必要箇所に、
前記波長変換物質と光吸収体とのうち少なくとも一方を
含む樹脂を塗布し、余分な量の前記樹脂はスキージで除
去することによって、必要箇所に必要量の樹脂層を形成
したことを特徴とする。According to a twenty-second aspect of the present invention, in the twenty-first aspect, the printing is performed by using a screen printing method, and a mask is used to form a necessary portion on the other surface of the transparent substrate.
A resin containing at least one of the wavelength conversion substance and the light absorber is applied, and an excessive amount of the resin is removed with a squeegee to form a required amount of a resin layer at a required position. .
【００２８】請求項２３の発明は、請求項２１の発明に
おいて、前記印刷はスクリーン印刷の手法を用い、マス
クを用いて前記樹脂シート上の必要箇所に、前記波長変
換物質と光吸収体とのうち少なくとも一方を含む樹脂を
塗布し、余分な量の前記樹脂はスキージで除去すること
によって、必要箇所に必要量の樹脂層を形成したことを
特徴とする。According to a twenty-third aspect of the present invention, in the twenty-first aspect of the present invention, the printing is performed by a screen printing method, and the wavelength conversion substance and the light absorber are provided at required positions on the resin sheet using a mask. A resin containing at least one of them is applied, and an excessive amount of the resin is removed with a squeegee to form a required amount of a resin layer at a required position.
【００２９】請求項２４の発明は、請求項２０の発明に
おいて、前記印刷はインクジェット印刷のドット式印刷
の手法を用い、前記波長変換物質と光吸収体とのうち少
なくとも一方を含む樹脂を、ノズルを用いて前記透光性
基板の他方の面上の必要箇所に適量滴下することにより
樹脂層を形成したことを特徴とする。In a twenty-fourth aspect of the present invention based on the twenty-first aspect, the printing is performed by a dot-type printing method of ink jet printing, and a nozzle containing a resin containing at least one of the wavelength conversion substance and the light absorber is used. Is used to form a resin layer by dropping an appropriate amount on a required location on the other surface of the transparent substrate.
【００３０】請求項２５の発明は、請求項２１の発明に
おいて、前記印刷はインクジェット印刷のドット式印刷
の手法を用い、前記波長変換物質と光吸収体とのうち少
なくとも一方を含む樹脂を、ノズルを用いて前記樹脂シ
ート上の必要箇所に適量滴下することにより樹脂層を形
成したことを特徴とする。In a twenty-fifth aspect of the invention, in the twenty-first aspect, the printing uses a dot-type printing method of ink jet printing, and a nozzle containing a resin containing at least one of the wavelength conversion substance and the light absorber is used. Is used to form a resin layer by dropping an appropriate amount on a required portion of the resin sheet.
【００３１】請求項２６の発明は、請求項２２または２
４の発明において、前記印刷は多色印刷の手法を用いる
ことにより、前記透光性基板の他方の面上の各場所毎
に、前記波長変換物質と光吸収体とのうち少なくとも一
方を含む樹脂層の厚み、及び前記樹脂層内に分散させた
前記波長変換物質、光吸収体の種類、濃度に変化を持た
せたことを特徴とする。The invention of claim 26 is the invention of claim 22 or 2.
In the invention of claim 4, the printing is performed by using a multicolor printing method, and a resin containing at least one of the wavelength conversion substance and the light absorber is provided for each place on the other surface of the transparent substrate. It is characterized in that the layer thickness and the types and concentrations of the wavelength conversion substance and the light absorber dispersed in the resin layer are changed.
【００３２】請求項２７の発明は、請求項２３または２
５の発明において、前記印刷は多色印刷の手法を用いる
ことにより、前記樹脂シート上の各場所毎に、前記波長
変換物質と光吸収体とのうち少なくとも一方を含む樹脂
層の厚み、及び前記樹脂層内に分散させた前記波長変換
物質、光吸収体の種類、濃度に変化を持たせたことを特
徴とする。The invention of claim 27 is the same as claim 23 or 2
In the invention of claim 5, the printing is performed by using a multicolor printing method, whereby the thickness of the resin layer containing at least one of the wavelength conversion substance and the light absorber is provided for each location on the resin sheet, and It is characterized in that the wavelength conversion substance and the light absorber dispersed in the resin layer are changed in kind and concentration.
【００３３】請求項２８の発明は、請求項２０の発明に
おいて、前記印刷はフォトルミネッセンスの手法を用い
ることにより、前記ウェハーの微小領域毎の発光強度を
分光検出し、これをコンピュータにより解析した結果に
基づいて、素子毎の色むらや光量むらが最小になるよう
に、前記波長変換物質と光吸収体とのうち少なくとも一
方を含む樹脂層の厚み、及び波長変換物質、光吸収体の
種類、量、濃度を制御しつつ、印刷の手法により前記透
光性基板の他方の面上に前記樹脂層を形成したことを特
徴とする。According to a twenty-eighth aspect of the invention, in the twenty-third aspect of the invention, the printing is performed by using a photoluminescence method, and the emission intensity of each minute region of the wafer is spectrally detected, and the result is analyzed by a computer. On the basis of the thickness of the resin layer containing at least one of the wavelength conversion substance and the light absorber, and the wavelength conversion substance, the type of the light absorber, so that color unevenness and light amount unevenness of each element are minimized. The resin layer is formed on the other surface of the translucent substrate by a printing method while controlling the amount and the density.
【００３４】請求項２９の発明は、請求項２１の発明に
おいて、前記印刷はフォトルミネッセンスの手法を用い
ることにより、前記ウェハーの微小領域毎の発光強度を
分光検出し、これをコンピュータにより解析した結果に
基づいて、素子毎の色むらや光量むらが最小になるよう
に、前記波長変換物質と光吸収体とのうち少なくとも一
方を含む樹脂層の厚み、及び波長変換物質、光吸収体の
種類、量、濃度を制御しつつ、印刷の手法により前記透
光性基板の他方の面上に貼りつける樹脂シート上に前記
樹脂層を形成したことを特徴とする。According to a twenty-ninth aspect of the present invention, in the printing method according to the twenty-first aspect, the printing is performed by using a photoluminescence method, the emission intensity of each minute region of the wafer is spectrally detected, and the result is analyzed by a computer. On the basis of the thickness of the resin layer containing at least one of the wavelength conversion substance and the light absorber, and the wavelength conversion substance, the type of the light absorber, so that color unevenness and light amount unevenness of each element are minimized. The resin layer is formed on a resin sheet attached to the other surface of the transparent substrate by a printing method while controlling the amount and the density.
【００３５】[0035]
【発明の実施の形態】以下、本発明の実施の形態を図面
に基づいて説明する。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.
【００３６】（実施形態１）図１は、本実施形態の構成
を示す。透光性基板１００は、例えばサファイアまたは
炭化珪素である。この一方の面に、窒化ガリウム、窒化
ガリウム・インジウムなどによる化合物半導体層が積層
されており、面上にｎ型半導体層１０１とｐ型半導体層
１０２のｐｎ接合が設けられており、その接合部が発光
層１０３となった発光ダイオードが形成されている。図
１では、ｐ型半導体層１０２がｎ型半導体層１０１まで
エッチングされており、露出したｎ型半導体層１０１に
ｎ側電極１０５が形成されている。ｐ側電極１０４はｐ
型半導体層１０２上に形成されている。透光性基板１０
０の他方の面（発光ダイオードが形成されたのとは反対
側の面）には、波長変換物質である蛍光体２００を分散
した樹脂２０１が塗布、結着されている。この蛍光体２
００は、当該発光ダイオードから発せられる光を吸収し
て、その補色の光を放出するような蛍光体である。この
目的の為にはＹＡＧ蛍光体などを用いることができる。
この構造によれば、発光ダイオードからの直接光と、蛍
光体２００によって変換された光が混合することによっ
て、白色光を得ることができる。この素子は、電極側
が、配線基板に直接接続されるフリップチップ方式によ
って実装される。(Embodiment 1) FIG. 1 shows the configuration of this embodiment. The transparent substrate 100 is, for example, sapphire or silicon carbide. A compound semiconductor layer made of gallium nitride, gallium nitride / indium, or the like is stacked on one of the surfaces, and a pn junction between the n-type semiconductor layer 101 and the p-type semiconductor layer 102 is provided on the surface, and a junction portion thereof is provided. Forming a light emitting layer 103. In FIG. 1, the p-type semiconductor layer 102 is etched to the n-type semiconductor layer 101, and the n-side electrode 105 is formed on the exposed n-type semiconductor layer 101. p-side electrode 104 is p
It is formed on the type semiconductor layer 102. Translucent substrate 10
On the other surface of 0 (the surface opposite to the surface on which the light emitting diode is formed), a resin 201 in which a phosphor 200 that is a wavelength conversion substance is dispersed is applied and bound. This phosphor 2
00 is a phosphor that absorbs the light emitted from the light emitting diode and emits light of its complementary color. A YAG phosphor or the like can be used for this purpose.
According to this structure, white light can be obtained by mixing the direct light from the light emitting diode and the light converted by the phosphor 200. This element is mounted by a flip chip method in which the electrode side is directly connected to the wiring board.
【００３７】波長変換物質の例として、第一に、発光ダ
イオードの発光色の補色に発光する蛍光体２００をあげ
た。しかしながら、他の発光色の蛍光体を用いれば、白
以外の混合色を得ることができる。装飾用の光源を得る
ことが目的の場合などには、このような実施形態も考え
られる。As an example of the wavelength conversion substance, firstly, the phosphor 200 which emits light in a color complementary to the emission color of the light emitting diode was mentioned. However, if phosphors of other emission colors are used, mixed colors other than white can be obtained. Such an embodiment is also conceivable when the purpose is to obtain a light source for decoration.
【００３８】更に、蛍光体２００の代わりに、光吸収体
である顔料を用いることも考えられる。顔料を用いるこ
とによって、特定の波長を吸収し、これによって、中間
色を得ることができる。色調を微妙に調整したり、装飾
用の光源を得ることが目的の場合などには、このような
実施形態も考えられる。Further, instead of the phosphor 200, it is possible to use a pigment which is a light absorber. By using a pigment, it is possible to absorb a specific wavelength and thereby obtain an intermediate color. Such an embodiment is also conceivable when the purpose is to finely adjust the color tone or to obtain a light source for decoration.
【００３９】また、黒色の顔料を用いれば、出力を下げ
ることができる。素子毎の出力のバラツキを平均化しよ
うとする場合に、明るいものの出力を落とす方法として
考えられる。また、この方法によって、消灯中の素子が
黒く見えるようにし、表示板などに用いる場合のコント
ラストを高める手法としても用いることができる。The output can be reduced by using a black pigment. This is considered as a method of reducing the output of bright ones when averaging the variations in the output of each element. This method can also be used as a method of making the turned off element appear black and increasing the contrast when it is used for a display panel or the like.
【００４０】更に、蛍光体２００と樹脂２０１からなる
層の上面に凹凸を設けておけば、全反射による光取りだ
し効率の低下を防ぐことができる。この凹凸は、結着樹
脂がそのような形に成形されていてもよいし、何らかの
粒体が混入されていてもよい。Furthermore, if unevenness is provided on the upper surface of the layer made of the phosphor 200 and the resin 201, it is possible to prevent a decrease in light extraction efficiency due to total reflection. The concavo-convex shape may be obtained by molding the binder resin in such a shape, or may be mixed with some particles.
【００４１】（実施形態２）図２は、本実施形態の構成
を示し、実施形態１と同様の構成には同一の符号を付し
て説明は省略する。実施形態１においては、蛍光体２０
０を樹脂２０１に分散させたが、ここではガラス２０２
に分散させている。ガラス２０２は樹脂に比べて、耐候
性が高く、発光ダイオードから放射される光などによっ
て変色することが極めて少ない。また、比較的高温で形
成されるので、高い温度にも変質しにくい。従って、こ
の発光素子は、大きな電流を流し、大量の光と熱を放出
するような使用に耐える。従って、素子当たりの光出力
の大きな照明装置を得ることができる。(Embodiment 2) FIG. 2 shows the configuration of the present embodiment. The same components as those in Embodiment 1 are designated by the same reference numerals and their description is omitted. In the first embodiment, the phosphor 20
0 was dispersed in resin 201, but here glass 202
Are dispersed in. The glass 202 has higher weather resistance than resin and is extremely unlikely to be discolored by light emitted from the light emitting diode. Further, since it is formed at a relatively high temperature, it is unlikely to deteriorate even at a high temperature. Therefore, the light emitting device withstands a use in which a large amount of light and a large amount of light and heat are emitted. Therefore, it is possible to obtain an illuminating device having a large light output per element.
【００４２】（実施形態３）図３は、本実施形態の構成
を示し、実施形態１と同様の構成において、透光性基板
１００の他方の面（発光ダイオードが形成されたのとは
反対側の面）を非鏡面として細かい凹凸が設けられてい
るものである。なお、実施形態１と同様の構成には同一
の符号を付して説明は省略する。この透光性基板１００
の表面の凹凸によって、２つの効果が得られる。１つ
は、透光性基板１００側から透過してきた光が、全反射
されずに外部へ放出される確率が増すことである。これ
によって、発光ダイオードから外部へ放射される光の量
が増し、発光効率が高くなる。もう１つは、波長変換物
質である蛍光体２００を固定している樹脂２０１の接着
表面積が増すので、より強固な接着が得られることであ
る。(Third Embodiment) FIG. 3 shows the structure of the present embodiment. In the same structure as that of the first embodiment, the other surface of the transparent substrate 100 (the side opposite to the side where the light emitting diode is formed) is shown. The surface) is a non-mirror surface and is provided with fine irregularities. The same components as those in the first embodiment are designated by the same reference numerals and the description thereof will be omitted. This transparent substrate 100
Two effects are obtained by the unevenness of the surface. One is that the probability that the light transmitted from the transparent substrate 100 side is emitted to the outside without being totally reflected. As a result, the amount of light emitted from the light emitting diode to the outside increases, and the luminous efficiency increases. The other is that the adhesive surface area of the resin 201 that fixes the phosphor 200, which is a wavelength conversion substance, increases, so that stronger adhesion can be obtained.
【００４３】また、このような構造は、透光性基板１０
０の一方の面上に発光する化合物半導体を積層したウェ
ハー状態での加工製造が容易になる。ウェハーは通常、
透光性基板１００の一方の面に、ｎ型半導体層１０１、
ｐ型半導体層１０２、発光層１０３、ｐ側電極１０４、
ｎ側電極１０５からなる発光ダイオードを設けた後、最
終工程でラッピング（研磨）によって薄くされる。通常
この工程では、面の凹凸をなくすように、粗い研磨剤か
ら細かい研磨剤に段階的に変えて研磨していく。本実施
形態では、比較的粗い研磨状態でラッピングを終了する
ことによって、細かい凹凸を得ることができる。この後
に、透光性基板１００の他方の面には、波長変換物質で
ある蛍光体２００を分散した樹脂２０１が塗布、結着さ
れる。なお、蛍光体２００の代わりに、光吸収体である
顔料、染料を用いてもよく、さらに樹脂２０１の代わり
に、実施形態２と同様にガラス２０２としてもよい。In addition, such a structure has a transparent substrate 10.
This facilitates processing and manufacturing in a wafer state in which a compound semiconductor that emits light is laminated on one surface of 0. Wafers are usually
On one surface of the transparent substrate 100, the n-type semiconductor layer 101,
p-type semiconductor layer 102, light emitting layer 103, p-side electrode 104,
After the light emitting diode including the n-side electrode 105 is provided, it is thinned by lapping (polishing) in the final step. Usually, in this step, polishing is performed by gradually changing from a coarse abrasive to a fine abrasive so as to eliminate surface irregularities. In this embodiment, fine unevenness can be obtained by finishing the lapping in a relatively rough polishing state. After that, the resin 201 in which the phosphor 200, which is a wavelength conversion substance, is dispersed is applied and bonded to the other surface of the transparent substrate 100. It should be noted that a pigment or dye that is a light absorber may be used in place of the phosphor 200, and glass 202 may be used instead of the resin 201 as in the second embodiment.
【００４４】（実施形態４）図４は、本実施形態の構成
を示し、実施形態１と同様の構成には同一の符号を付し
て説明は省略する。波長変換物質である蛍光体２００を
設けた透光性基板１００の他方の面（発光ダイオードが
形成されたのとは反対側の面）に、蛍光体２００の粒径
よりも十分大きな凹部１００ａを設ける。この凹部１０
０ａの形状は図４のような逆三角形の溝に限定するもの
ではなく、どのような形状でも同様の効果が得られる。
この凹部１００ａに蛍光体２００を凹部１００ａの上部
に達するまで入れ、透光性の樹脂の板２０３を接着して
蓋とする。これによって、２つの効果が得られる。１つ
は、凹部１００ａの形状によって、封入される蛍光体２
００の量と配置が限定されることである。これによっ
て、素子毎のバラツキが無く、蛍光体２００を配置する
ことが可能である。もう１つは、結着用の樹脂を用いる
ことなく蛍光体２００を素子上に配置していることであ
る。一般に、結着用樹脂は光化学反応によって着色して
いく。この結果、発光ダイオードの見かけの出力が時間
とともに低下していく。しかしながら、本構造では、素
子直近には、樹脂を用いないので、このような劣化を押
さえることができる。(Embodiment 4) FIG. 4 shows the configuration of the present embodiment. The same components as those in Embodiment 1 are designated by the same reference numerals and their description is omitted. On the other surface of the translucent substrate 100 provided with the phosphor 200 that is the wavelength conversion material (the surface opposite to the side where the light emitting diode is formed), a recess 100a that is sufficiently larger than the particle diameter of the phosphor 200 is formed. Set up. This recess 10
The shape of 0a is not limited to the inverted triangular groove as shown in FIG. 4, and the same effect can be obtained with any shape.
The phosphor 200 is inserted into the recess 100a until it reaches the upper part of the recess 100a, and a translucent resin plate 203 is adhered to form a lid. This has two effects. One is the phosphor 2 to be enclosed due to the shape of the recess 100a.
The quantity and arrangement of 00 are limited. As a result, it is possible to dispose the phosphors 200 without variations among the elements. The other is that the phosphor 200 is arranged on the element without using a binding resin. Generally, the binder resin is colored by a photochemical reaction. As a result, the apparent output of the light emitting diode decreases with time. However, in this structure, since no resin is used in the immediate vicinity of the element, such deterioration can be suppressed.
【００４５】図４では、素子の全域に渡って、同じ形状
の凹部１００ａが描かれているが、形状を意図的に変化
させることも考えられる。一般に発光素子によって、周
辺部と中央部の発光量が異なる。また、電極の影響によ
っても発光の分布が変化する。これらの発光状態に合わ
せて、最終的に最も好適な光が放射されるように、凹部
１００ａの形状分布を設計しておくことが考えられる。In FIG. 4, the recess 100a having the same shape is drawn over the entire area of the element, but it is also possible to intentionally change the shape. Generally, the amount of light emission at the peripheral portion and the central portion differs depending on the light emitting element. Also, the distribution of light emission changes due to the influence of the electrodes. It is conceivable to design the shape distribution of the recess 100a so as to finally emit the most suitable light in accordance with these light emitting states.
【００４６】また、このような構造は、透光性基板１０
０の一方の面上に発光する化合物半導体を積層したウェ
ハー状態での加工製造が容易になる。ウェハーは通常、
透光性基板１００の一方の面に、ｎ型半導体層１０１、
ｐ型半導体層１０２、発光層１０３、ｐ側電極１０４、
ｎ側電極１０５からなる発光ダイオードを設けた後、個
々の発光素子にするために切断される。この切断方法の
中で、一般的な方法は、予めダイシングソーで溝を設
け、しかるのちに、全面に力をかけて割るというもので
ある。この、割り溝を設けるときに、厚めのダイシング
ブレードを用い、溝を設け、そこに蛍光体２００を充填
する。ダイシングの後、エッチングを施すことによっ
て、溝の形状を変化させることも可能である。溝は、ダ
イシングブレード以外のワイヤーソーやエッチング、レ
ーザー加工などでも設けることができる。Further, such a structure has a transparent substrate 10
This facilitates processing and manufacturing in a wafer state in which a compound semiconductor that emits light is laminated on one surface of 0. Wafers are usually
On one surface of the transparent substrate 100, the n-type semiconductor layer 101,
p-type semiconductor layer 102, light emitting layer 103, p-side electrode 104,
After providing the light emitting diode composed of the n-side electrode 105, it is cut into individual light emitting elements. In this cutting method, a general method is to form a groove with a dicing saw in advance, and then apply force to the entire surface to divide the groove. When forming the split groove, a thick dicing blade is used to form the groove, and the phosphor 200 is filled therein. It is also possible to change the shape of the groove by performing etching after dicing. The groove can be provided by a wire saw other than the dicing blade, etching, laser processing, or the like.
【００４７】（実施形態５）前記実施形態４において、
波長変換物質である蛍光体２００を結着手段を用いて充
填し、透光性の樹脂の板２０３などの蓋を用いない構造
も考えられる。この場合は、実施形態２で述べた、ガラ
ス２０２などの耐候性のある結着剤を用いる。これによ
って、実施形態４で述べた蛍光体２００の量と配置を制
御するという効果を得ることができ、且つ実施形態３と
略同様の構成となる。(Fifth Embodiment) In the fourth embodiment,
A structure in which the phosphor 200, which is a wavelength conversion substance, is filled by using a binding means and a lid such as a translucent resin plate 203 is not used is also conceivable. In this case, the weather-resistant binder such as the glass 202 described in Embodiment 2 is used. As a result, the effect of controlling the amount and arrangement of the phosphors 200 described in the fourth embodiment can be obtained, and the configuration is substantially the same as that of the third embodiment.
【００４８】また、このような構造は、透光性基板１０
０の一方の面上に発光する化合物半導体を積層したウェ
ハー状態での加工製造が容易になる。ウェハーは通常、
透光性基板１００の一方の面に、ｎ型半導体層１０１、
ｐ型半導体層１０２、発光層１０３、ｐ側電極１０４、
ｎ側電極１０５からなる発光ダイオードを設けた後、個
々の発光素子にするために切断される。この切断方法の
中で、一般的な方法は、予めダイシングソーで溝を設
け、しかるのちに、全面に力をかけて割るというもので
ある。この割り溝を設けるときに、厚めのダイシングブ
レードを用い、溝を設け、そこに蛍光体２００とガラス
２０２などの結着剤とを充填する。ダイシングの後、エ
ッチングを施すことによって、溝の形状を変化させるこ
とも可能である。溝は、ダイシングブレード以外のワイ
ヤーソーやエッチング、レーザー加工などでも設けるこ
とができる。In addition, such a structure has a transparent substrate 10.
This facilitates processing and manufacturing in a wafer state in which a compound semiconductor that emits light is laminated on one surface of 0. Wafers are usually
On one surface of the transparent substrate 100, the n-type semiconductor layer 101,
p-type semiconductor layer 102, light emitting layer 103, p-side electrode 104,
After providing the light emitting diode composed of the n-side electrode 105, it is cut into individual light emitting elements. In this cutting method, a general method is to form a groove with a dicing saw in advance, and then apply force to the entire surface to divide the groove. When providing the dividing groove, a thick dicing blade is used to form the groove, and the phosphor 200 and a binder such as glass 202 are filled therein. It is also possible to change the shape of the groove by performing etching after dicing. The groove can be provided by a wire saw other than the dicing blade, etching, laser processing, or the like.
【００４９】（実施形態６）図５は、本実施形態の構成
を示し、実施形態１と同様の構成には同一の符号を付し
て説明は省略する。波長変換物質である蛍光体２００を
設けた透光性基板１００の他方の面（発光ダイオードが
形成されたのとは反対側の面）の周端部を除去した切削
部３００ａ，３００ｂを形成し、その切削部３００ａ，
３００ｂにも蛍光体２００、樹脂２０１が充填されてい
る。このとき、透光性基板１００の他方の面に形成した
発光ダイオードから放出される光は、透光性基板１００
の上面からだけ放出されるのではなく、側面からも多く
放射される。均質な光を得る為には、この側面から放射
される光をも出来るだけ沢山、蛍光体２００に導き入れ
る必要がある。(Sixth Embodiment) FIG. 5 shows the configuration of the present embodiment. The same components as those of the first embodiment are designated by the same reference numerals and the description thereof will be omitted. The cut portions 300a and 300b are formed by removing the peripheral edge portion of the other surface (the surface opposite to the surface on which the light emitting diode is formed) of the translucent substrate 100 provided with the phosphor 200 which is a wavelength conversion material. , Its cutting part 300a,
The phosphor 200 and the resin 201 are also filled in 300b. At this time, the light emitted from the light emitting diode formed on the other surface of the transparent substrate 100 is the transparent substrate 100.
It is not only emitted from the upper surface of the, but also emitted from the side surface. In order to obtain uniform light, it is necessary to introduce as much light as possible from this side surface into the phosphor 200.
【００５０】本実施形態はその為の方策である。図５の
右側の切削部３００ａは側面を傾斜させて形成し、左側
の切削部３００ｂは側面を上面に対して垂直に形成して
いる。この切削部３００ａ，３００ｂの形状には色々な
ものが考えられ、何ら限定の必要はない。また、切削部
３００ａ，３００ｂと表現しているが、実際に製作する
手段は切削のほか、エッチングなども考えられ、方法に
ついて限定するものでもない。This embodiment is a measure therefor. The cutting portion 300a on the right side of FIG. 5 is formed with the side surface inclined, and the cutting portion 300b on the left side is formed with the side surface perpendicular to the upper surface. Various shapes are conceivable for the cutting portions 300a and 300b, and it is not necessary to limit the shapes. Further, although the cutting portions 300a and 300b are described, the actual manufacturing means may be cutting, etching, or the like, and the method is not limited.
【００５１】また、このような構造は、透光性基板１０
０の一方の面上に発光する化合物半導体を積層したウェ
ハー状態での加工製造が容易になる。ウェハーは通常、
透光性基板１００の一方の面に、ｎ型半導体層１０１、
ｐ型半導体層１０２、発光層１０３、ｐ側電極１０４、
ｎ側電極１０５からなる発光ダイオードを設けた後、個
々の発光素子にするために切断される。この切断方法の
中で、一般的な方法は、予めダイシングソーで溝を設
け、しかるのちに、全面に力をかけて割るというもので
ある。この割り溝を設けるときに、厚めのダイシングブ
レードを用い、第一の溝を設け、そこに蛍光体２００、
樹脂２０１を充填しその中央に薄いダイシングブレード
で第二の溝を設け、その溝は、第一の溝よりも深いとこ
ろに達しているようにする。その後に力をかけて割るこ
とによって本実施形態の構造ができる。第一のダイシン
グの後、エッチングを施すことによって、溝の形状を変
化させることも可能である。溝は、ダイシングブレード
以外のワイヤーソーやエッチング、レーザー加工などで
も設けることができる。In addition, such a structure has a transparent substrate 10.
This facilitates processing and manufacturing in a wafer state in which a compound semiconductor that emits light is laminated on one surface of 0. Wafers are usually
On one surface of the transparent substrate 100, the n-type semiconductor layer 101,
p-type semiconductor layer 102, light emitting layer 103, p-side electrode 104,
After providing the light emitting diode composed of the n-side electrode 105, it is cut into individual light emitting elements. In this cutting method, a general method is to form a groove with a dicing saw in advance, and then apply force to the entire surface to divide the groove. When providing the split groove, a thick dicing blade is used to provide the first groove, and the phosphor 200,
The resin 201 is filled and a second dicing blade is provided in the center thereof with a thin dicing blade so that the groove reaches a position deeper than the first groove. After that, the structure of this embodiment can be obtained by applying a force and breaking. It is also possible to change the shape of the groove by performing etching after the first dicing. The groove can be provided by a wire saw other than the dicing blade, etching, laser processing, or the like.
【００５２】（実施形態７）図６は、本実施形態の構成
を示し、実施形態６と同様の構成には同一の符号を付し
て説明は省略する。発光ダイオードの発光層１０３で発
生した光は、ｎ型半導体層１０１側およびｐ型半導体層
１０２側へ放出されるが、ｎ型半導体層１０１とｐ型半
導体層１０２との間を反射しながら、横方向へ伝播する
ものがかなりの割合で存在する。この光を蛍光体２００
に取りこむための構造が本実施形態の構造である。(Embodiment 7) FIG. 6 shows the configuration of the present embodiment. The same components as those of Embodiment 6 are designated by the same reference numerals and their description is omitted. The light generated in the light emitting layer 103 of the light emitting diode is emitted to the n-type semiconductor layer 101 side and the p-type semiconductor layer 102 side, while reflecting between the n-type semiconductor layer 101 and the p-type semiconductor layer 102, There is a significant proportion of lateral propagation. This light is emitted from the phosphor 200
The structure for taking in is the structure of this embodiment.
【００５３】図６は透光性基板１００の一方の面の周端
部、及びｎ型半導体層１０１、ｐ型半導体層１０２、発
光層１０３、ｐ側電極１０４、ｎ側電極１０５からなる
発光ダイオードの周端部を除去した切削部３０１ａ，３
０１ｂを設けたもので、実施形態６の図５に切削部３０
１ａ，３０１ｂを付加したものであるが、実施形態１の
図１に切削部３０１ａ，３０１ｂを付加した構造でも効
果がある。FIG. 6 shows a light emitting diode including a peripheral edge portion on one surface of a transparent substrate 100 and an n-type semiconductor layer 101, a p-type semiconductor layer 102, a light emitting layer 103, a p-side electrode 104, and an n-side electrode 105. Cutting parts 301a, 3 from which the peripheral edge of the
01b is provided, and the cutting portion 30 is shown in FIG.
1a and 301b are added, the structure in which cutting portions 301a and 301b are added to FIG. 1 of the first embodiment is also effective.
【００５４】図６において、右側の切削部３０１ａは、
メサエッチのみで溝を作製した場合である。このメサエ
ッチはＲＩＥなどで、ｎ型半導体層１０１を露出させる
ことと、端面での漏れ電流を防止するために行われる。
このエッチングを素子の周辺部に幅を通常よりも広め
に、深めに行う。その部分に蛍光体２００を分散した樹
脂２０１を充填する。In FIG. 6, the cutting portion 301a on the right side is
This is the case where the groove is formed only by mesa etching. This mesa etching is performed by RIE or the like to expose the n-type semiconductor layer 101 and to prevent a leakage current at the end face.
This etching is performed in the peripheral portion of the device with a width wider than usual and a depth deeper than usual. The portion is filled with a resin 201 in which the phosphor 200 is dispersed.
【００５５】左側の切削部３０１ｂは、メサエッチのほ
かに、ダイシングブレードなどで、透光性基板１００も
切削したものである。また、実施形態６と同様にこの溝
を２重にして、割り溝とすることも可能である。The left cutting portion 301b is formed by cutting the transparent substrate 100 with a dicing blade or the like in addition to the mesa etching. Further, like the sixth embodiment, this groove can be doubled to form a split groove.
【００５６】（実施形態８）図７は、本実施形態の構成
を示し、蛍光体２００、樹脂２０１を含む層において透
光性基板１００に対向する面の反対側の面に反射膜（光
反射機能を有する薄膜）を備えたもので、実施形態１と
同様の構成には同一の符号を付して説明は省略する。実
施形態１〜７においては発光素子をフェイスダウンで実
装することを前提としていたが、本実施形態では、フェ
イスアップでの実装を前提としている。フェイスアップ
とは、反射膜３１０面をダイボンディングし、ｐ側電極
１０４およびｎ側電極１０５をワイヤボンディングによ
って配線基板に電気的に接続するものである。この場
合、反射膜３１０面が配線基板側になる。反射膜３１０
がない場合、配線基板又はダイボンド剤によって光が吸
収される。これを避ける為に反射膜３１０を設けてい
る。この反射膜３１０は、金属薄膜でも、多層膜でもよ
い。(Embodiment 8) FIG. 7 shows the structure of the present embodiment, in which a reflection film (light reflection) is formed on the surface of the layer containing the phosphor 200 and the resin 201, which is opposite to the surface facing the transparent substrate 100. A thin film having a function), the same configurations as those in the first embodiment are denoted by the same reference numerals and the description thereof will be omitted. In Embodiments 1 to 7, it is assumed that the light emitting element is mounted face down, but in the present embodiment, it is assumed that the light emitting element is mounted face up. In the face-up, the surface of the reflective film 310 is die-bonded, and the p-side electrode 104 and the n-side electrode 105 are electrically connected to the wiring board by wire bonding. In this case, the surface of the reflective film 310 is on the wiring board side. Reflective film 310
In the absence of light, light is absorbed by the wiring board or the die bonding agent. In order to avoid this, the reflection film 310 is provided. The reflective film 310 may be a metal thin film or a multilayer film.
【００５７】また、このような構造を製造するには、透
光性基板１００の一方の面に、ｎ型半導体層１０１、ｐ
型半導体層１０２、発光層１０３、ｐ側電極１０４、ｎ
側電極１０５からなる発光ダイオードを設けたウェハー
状態で反射膜３１０を形成しておき、その後に切断する
という方法が考えられる。このようにすれば、簡便に均
一な反射膜３１０の形成が可能である。In order to manufacture such a structure, the n-type semiconductor layers 101, p are formed on one surface of the transparent substrate 100.
Type semiconductor layer 102, light emitting layer 103, p-side electrode 104, n
A method is conceivable in which the reflective film 310 is formed in a wafer state in which the light emitting diode including the side electrode 105 is provided and then cut. By doing so, it is possible to easily and uniformly form the reflective film 310.
【００５８】（実施形態９）図８は、本実施形態の構成
を示し、実施形態１と同様の構成には同一の符号を付し
て説明は省略する。透光性基板１００の一方の面に形成
した、ｎ型半導体層１０１、ｐ型半導体層１０２、発光
層１０３、ｐ側電極１０４、ｎ側電極１０５からなる発
光ダイオードは紫外線を放射するもので、波長変換物質
には、青色、緑色、赤色を各々放射する蛍光体２００
ａ，２００ｂ，２００ｃを積層して用いる。これらの光
の混合によって、白色光が得られる。各色の蛍光体２０
０ａ，２００ｂ，２００ｃの各層の厚みを変えることに
よって色調を変化させることができる。(Ninth Embodiment) FIG. 8 shows the structure of the present embodiment. The same components as those of the first embodiment are designated by the same reference numerals and the description thereof will be omitted. A light emitting diode formed on one surface of the transparent substrate 100 and including the n-type semiconductor layer 101, the p-type semiconductor layer 102, the light emitting layer 103, the p-side electrode 104, and the n-side electrode 105 emits ultraviolet light. The wavelength conversion material is a phosphor 200 that emits blue, green, and red, respectively.
A, 200b, and 200c are laminated and used. White light is obtained by mixing these lights. Phosphor 20 of each color
The color tone can be changed by changing the thickness of each layer of 0a, 200b, and 200c.
【００５９】ここで用いる蛍光体２００は、用途によっ
て最適なものが選ばれ、中間色を出す為または、光の強
さを調節する為に、一部または全部の層が顔料や染料を
含む場合も考えられる。The phosphor 200 used here is optimally selected depending on the application, and when some or all layers contain pigments or dyes in order to produce an intermediate color or to adjust the intensity of light. Conceivable.
【００６０】また、このような構造を製造するには、蛍
光体２００ａ，２００ｂ，２００ｃを各々分散させた樹
脂シートを形成し、透光性基板１００の一方の面に、ｎ
型半導体層１０１、ｐ型半導体層１０２、発光層１０
３、ｐ側電極１０４、ｎ側電極１０５からなる発光ダイ
オードを設けたウェハー状態において、透光性基板の他
方の面に蛍光体２００ａ，２００ｂ，２００ｃを各々分
散させた樹脂シートを積層して貼りつけた後、個々の素
子に分割する。In order to manufacture such a structure, a resin sheet in which the phosphors 200a, 200b and 200c are dispersed is formed, and n is formed on one surface of the transparent substrate 100.
-Type semiconductor layer 101, p-type semiconductor layer 102, and light-emitting layer 10
3, in a wafer state provided with a light emitting diode composed of a p-side electrode 104 and an n-side electrode 105, a resin sheet in which phosphors 200a, 200b, and 200c are dispersed is laminated and attached to the other surface of the transparent substrate. After applying, it is divided into individual elements.
【００６１】（実施形態１０）図９は、本実施形態の構
成を示し、実施形態９と同様の構成には同一の符号を付
して説明は省略する。本実施形態の構成は実施形態９と
略同様であるが、透光性基板１００の屈折率は、周囲に
存在する封止物質または大気の屈折率、蛍光体２００
ａ，２００ｂ，２００ｃの各層の屈折率よりも大きく、
蛍光体２００ａ，２００ｂ，２００ｃの各層の屈折率
は、互いに異なって、透光性基板１００の屈折率よりは
小さく、周囲に存在する封止物質または大気の屈折率よ
りは大きく、透光性基板１００から遠い層ほど低下す
る。これによって、全反射されずに表面から放出される
光の量が増える。本来は、発光層１０３から蛍光体２０
０ａの層に全反射角で入射し、外部に出ることができな
い光Ａも、光路が順に屈折によって曲げられ、やがて蛍
光体２００ｃの層の端面から放射される。蛍光体２００
ｃの層の最上面が実施形態１の最後で述べたような粗面
になっておれば、さらに効果があり、散乱光Ｂとして外
部に取り出すことも可能である。(Embodiment 10) FIG. 9 shows the configuration of the present embodiment. The same components as those in Embodiment 9 are designated by the same reference numerals, and the description thereof will be omitted. The configuration of this embodiment is substantially the same as that of the ninth embodiment, but the refractive index of the transparent substrate 100 is the refractive index of the sealing substance or the atmosphere existing in the surroundings, and the phosphor 200.
greater than the refractive index of each layer of a, 200b, 200c,
The respective layers of the phosphors 200a, 200b, and 200c have different refractive indexes from each other, are smaller than the refractive index of the transparent substrate 100, and are larger than the refractive index of the surrounding sealing material or the atmosphere, and the transparent substrate. The layer farther from 100 is lower. This increases the amount of light emitted from the surface without being totally reflected. Originally, from the light emitting layer 103 to the phosphor 20
The light A that is incident on the layer of 0a at a total reflection angle and cannot be emitted to the outside is also bent in the optical path by refraction in order, and is eventually emitted from the end surface of the layer of the phosphor 200c. Phosphor 200
If the uppermost surface of the layer c is a rough surface as described at the end of the first embodiment, it is more effective and the scattered light B can be extracted to the outside.
【００６２】（実施形態１１）図１０は、実施形態１の
構造を有する発光素子の製造方法を示したもので、実施
形態１と同様の構成には同一の符号を付して説明は省略
する。透光性基板１００の一方の面に発光層１０３を形
成したウェハーの他方の面にスピンコーターを用いて波
長変換物質である蛍光体２００を分散させた樹脂２０１
を塗布し、熱処理などで硬化させる。この結着剤は樹脂
２０１でなくても、ガラスなどでもよい。次にこれをＳ
面で切断して、個々の発光素子とする。このように樹脂
２０１を塗布するのは、発光層１０３の形成前でもよい
し、電極１０４，１０５まで製作した最終段階でも良
い。つまり、工程のいずれの段階でもよい。(Embodiment 11) FIG. 10 shows a method of manufacturing a light emitting device having the structure of Embodiment 1. The same components as those in Embodiment 1 are designated by the same reference numerals and their description is omitted. . A resin 201 in which a phosphor 200, which is a wavelength conversion substance, is dispersed by using a spin coater on the other surface of a wafer having a light emitting layer 103 formed on one surface of a transparent substrate 100.
Is applied and cured by heat treatment or the like. This binder may be glass or the like instead of the resin 201. Next this is S
Each surface is cut into individual light emitting elements. The resin 201 may be applied in this manner before the formation of the light emitting layer 103 or at the final stage of manufacturing the electrodes 104 and 105. That is, it may be at any stage of the process.
【００６３】（実施形態１２）実施形態１１では、スピ
ンコータを用いる例を述べたが、スキージ等で余分な樹
脂２０１を除去しつつ、塗布する方法が考えられる。こ
の際、スペーサーを用いることによって、厚みを一定に
する。スペーサーは、一定の高さのものを予めウェハー
に固着させる方法と、図１１のように、直径の決まった
ガラスビーズ２０５を用いる方法が考えられる。この場
合、スキージ等で余分な樹脂２０１を除去しつつ塗布す
るよりも、平面を有する押さえ手段２０４で樹脂２０１
の層を上面から押さえ、硬化後押さえ手段２０４から離
型するという方法が考えられる。(Embodiment 12) In Embodiment 11, an example using a spin coater has been described, but a method of applying while removing the excess resin 201 with a squeegee or the like is conceivable. At this time, the thickness is made constant by using a spacer. As the spacer, a method of previously fixing a certain height to the wafer and a method of using glass beads 205 having a fixed diameter as shown in FIG. 11 can be considered. In this case, rather than applying the resin 201 while removing the excess resin 201 with a squeegee or the like, the resin 201 is applied by the pressing means 204 having a flat surface.
It is conceivable to hold down the above layer from the upper surface and release it from the holding means 204 after curing.
【００６４】（実施形態１３）本実施形態は、図１０に
おいて、発光体２００と樹脂２０１との部分が予め作ら
れた樹脂シートからなり、樹脂シートを予め形成するこ
とによって、均一な層を製作することができる。樹脂シ
ートに凹凸を設けたり、波長変換物質の分布や量を制御
する場合、樹脂シートを別途製作すれば、製作も容易で
ある。また、用途に合わせて複数の種類の樹脂シートを
作り置きして、必要に応じて接着して組立てて、製造工
程を続行していくことも可能である。(Embodiment 13) In this embodiment, in FIG. 10, a portion of a light emitting body 200 and a resin 201 is made of a resin sheet prepared in advance, and a uniform layer is manufactured by forming the resin sheet in advance. can do. When unevenness is provided on the resin sheet or the distribution and amount of the wavelength conversion substance are controlled, the resin sheet can be manufactured separately, and the manufacturing is easy. It is also possible to make a plurality of types of resin sheets in advance according to the application, and bond and assemble them as needed to continue the manufacturing process.
【００６５】（実施形態１４）本実施形態は、透光性基
板１００の一方の面にｎ型半導体層１０１、ｐ型半導体
層１０２、発光層１０３、ｐ側電極１０４、ｎ側電極１
０５からなる発光ダイオードを形成し、個々の素子に切
断する前のウェハーを基材とし、ウェハーの他方の面に
波長変換物質または光吸収体のうち少なくとも一方を含
む樹脂層を印刷によって形成するものである。平版、孔
版、凸版、凹版、吹き付けなどのいずれの方法において
も、波長変換物質をウェハー上又は、ウェハーに貼るこ
とを目的とした樹脂板に配置することができ、予め、版
を作ることによって、波長変換物質の配置を細かく制御
できるのが特長である。(Embodiment 14) In this embodiment, an n-type semiconductor layer 101, a p-type semiconductor layer 102, a light emitting layer 103, a p-side electrode 104, and an n-side electrode 1 are provided on one surface of a transparent substrate 100.
Forming a light emitting diode made of 05, using the wafer before cutting into individual elements as a base material, and forming a resin layer containing at least one of a wavelength conversion substance and a light absorber by printing on the other surface of the wafer Is. In any of the methods such as lithographic, stencil, letterpress, intaglio, and spraying, the wavelength conversion substance can be placed on the wafer or on a resin plate intended for sticking to the wafer, and by making a plate in advance, The feature is that the arrangement of the wavelength conversion material can be finely controlled.
【００６６】発光ダイオードは、電極１０４，１０５の
配置や発光素子の切断のされ方、発光素子の大きさなど
に関係して、光の放出が均一ではない。従って、波長変
換物質を配置する場合、この光の放出特性に合わせた配
置をするのが効果的である。例えば、光が多く放出され
る部分に黒色顔料を配置することによって、発光素子の
表面からでる光の強さ分布を均質化することも可能であ
る。あるいは、均一な白色を得る為に、もともとの青色
光の強い部分には、多めの黄色変換物質を配置するとい
うことが求められる。In the light emitting diode, the light emission is not uniform depending on the arrangement of the electrodes 104 and 105, how the light emitting element is cut, the size of the light emitting element, and the like. Therefore, when arranging the wavelength conversion substance, it is effective to arrange the wavelength conversion substance according to this light emission characteristic. For example, by arranging a black pigment in a portion where a large amount of light is emitted, it is possible to homogenize the intensity distribution of light emitted from the surface of the light emitting element. Alternatively, in order to obtain a uniform white color, it is required to dispose a large amount of yellow converting substance in the originally strong blue light portion.
【００６７】本実施形態では、ウェハー上に、パターン
化された波長変換物質が配置される。このパターンは版
によって制御され、例えばこのパターンを孔版の開孔率
とすると開孔率の高い領域では、単位面積当たりの波長
変換物質の濃度が高くなり、低い領域では低くなる。即
ち、波長変換物質の量を、結着剤に対する量や、厚みで
はなくて、平面状のパターンの面積当たりに占める割合
によって制御しているのである。In the present embodiment, a patterned wavelength conversion material is arranged on the wafer. This pattern is controlled by the plate. For example, when the pattern has the porosity of the stencil, the concentration of the wavelength conversion substance per unit area is high in the region where the porosity is high and is low in the region where the porosity is low. That is, the amount of the wavelength conversion substance is controlled not by the amount with respect to the binder or the thickness, but by the ratio of the planar pattern to the area.
【００６８】（実施形態１５）実施形態１４では、同一
組成、同一濃度の波長変換物質分散樹脂などを、平版、
孔版、凸版、凹版、吹き付けなどのいずれか方法におい
てウェハー上に配置することを述べた。本実施形態は、
更に、多色刷りの技術を用いて、異なる組成または濃度
の波長変換物質分散樹脂などをそれぞれの異なったパタ
ーンで配置する方法である。光の強さと、光の色を同時
に均質化するばあいなどに、蛍光体と顔料などを同時に
一定の割合で配置する必要があるが、この方法ではそれ
が可能である。青の光を黄色に変換する蛍光体を用い
て、白色を得る場合に、青の波長が微妙に異なることに
よって、白色の色味が微妙に異なる。これを均一化する
ためには、黄色の蛍光体で発光ピーク波長の異なるもの
を複数使ったり、顔料を用いることが考えられる。これ
らを所望の割合で簡便に配置するには、多色刷りの技術
を用いた印刷的手法を用いるのが簡便である。(Fifteenth Embodiment) In the fourteenth embodiment, a wavelength conversion material-dispersed resin having the same composition and the same concentration is used as a lithographic plate,
Arrangement on the wafer is described by any method such as stencil printing, letterpress printing, intaglio printing, and spraying. In this embodiment,
Further, it is a method of arranging the wavelength conversion material-dispersed resin or the like having different compositions or concentrations in different patterns by using the technique of multicolor printing. When homogenizing the intensity of light and the color of light at the same time, it is necessary to dispose the phosphor and the pigment at a constant ratio at the same time, which is possible with this method. When white is obtained using a phosphor that converts blue light into yellow, the tint of white is subtly different due to the subtle difference in blue wavelength. In order to make this uniform, it is possible to use a plurality of yellow phosphors having different emission peak wavelengths or to use a pigment. In order to arrange these in a desired ratio easily, it is convenient to use a printing method using a multicolor printing technique.
【００６９】（実施形態１６）実施形態１５でも述べた
ように、青の光を黄色に変換する蛍光体を用いて、白色
を得る場合に、青の波長が微妙に異なることによって、
白色の色味が微妙に異なる。これを均一化するために
は、黄色の蛍光体で発光ピーク波長の異なるものを複数
使ったり、顔料を用いることが考えられる。この青の波
長や強さのばらつきは、同一ウェハー内で生じる。従っ
て、これらを補正するには、一定の版を設けて行うより
も、ウェハー１枚１枚について個別に行った方がより効
果的である。(Embodiment 16) As described in Embodiment 15, when a white light is obtained using a phosphor that converts blue light into yellow light, the wavelength of blue is slightly different,
The tint of white is slightly different. In order to make this uniform, it is possible to use a plurality of yellow phosphors having different emission peak wavelengths or to use a pigment. This variation in blue wavelength and intensity occurs within the same wafer. Therefore, in order to correct these, it is more effective to perform the correction for each wafer individually than to perform the correction by providing a fixed plate.
【００７０】図１２にその概要を示す。予め、コンピュ
ータ４０２と、光検知機４０１と分光器４００とを用い
て、分光器４００からレーザー光４０４をレンズ４０３
を介してウェハー１１０に当てる、すなわちフォトルミ
ネッセンスを用いて、ウェハー１１０内の発光波長と強
度のバラツキをマッピングする（図１２（ａ））。そし
て、マッピングしたデータから、最適な蛍光体塗布のパ
ターンを計算し、このパターンに従って、インクジェッ
ト式印刷システム４０５によって、蛍光体分散樹脂２１
０をウェハー１１０に吹き付けていく、あるいは、樹脂
シート上に吹き付けて、このシートをウェハー１１０に
貼りつけることによって色のばらつきを補正することが
できる（図１２（ｂ））。FIG. 12 shows its outline. In advance, the computer 402, the photodetector 401, and the spectroscope 400 are used to emit the laser light 404 from the spectroscope 400 to the lens 403.
It is applied to the wafer 110 via, that is, the photoluminescence is used to map the variation in the emission wavelength and the intensity in the wafer 110 (FIG. 12A). Then, an optimum phosphor coating pattern is calculated from the mapped data, and the phosphor-dispersed resin 21 is calculated by the inkjet printing system 405 according to this pattern.
It is possible to correct the color variation by spraying 0 onto the wafer 110, or by spraying on the resin sheet and sticking this sheet onto the wafer 110 (FIG. 12B).
【００７１】[0071]
【発明の効果】請求項１の発明は、透光性基板と、前記
透光性基板の一方の面上に積層して発光する化合物半導
体と、前記透光性基板の他方の面上に設けられて前記化
合物半導体の発光によって励起され、励起波長と異なる
波長の光を放射する波長変換物質と前記化合物半導体ま
たは波長変換物質の発光の一部を吸収する光吸収体との
うち少なくとも一方を含む層とを備えたので、波長変換
物質、光吸収体を均一に、且つロット間でのバラツキを
少なく形成することができるという効果がある。According to the first aspect of the present invention, a transparent substrate, a compound semiconductor that emits light by being stacked on one surface of the transparent substrate, and a compound semiconductor provided on the other surface of the transparent substrate are provided. And is excited by the light emission of the compound semiconductor, and includes at least one of a wavelength conversion substance that emits light having a wavelength different from the excitation wavelength and a light absorber that absorbs a part of the light emission of the compound semiconductor or the wavelength conversion substance. Since it is provided with the layer, there is an effect that the wavelength conversion substance and the light absorber can be uniformly formed with less variation among lots.
【００７２】請求項２の発明は、請求項１の発明におい
て、前記波長変換物質は蛍光体からなり、前記光吸収体
は顔料または染料からなるので、蛍光体、顔料、染料を
用いて請求項１と同様の効果がある。According to a second aspect of the present invention, in the first aspect of the present invention, the wavelength conversion substance is made of a phosphor and the light absorber is made of a pigment or a dye. Therefore, a phosphor, a pigment or a dye is used. It has the same effect as 1.
【００７３】請求項３の発明は、請求項１または２の発
明において、前記波長変換物質と光吸収体とのうち少な
くとも一方を含む層がガラスで形成されたので、化合物
半導体は樹脂に比べて高温に耐えることができることと
合わせて、ガラスのような融点の高い物質を波長変換物
質、光吸収体の結着材料として用いることができ、従
来、この目的で使用されていたエポキシなどの樹脂材料
に比べて、各段の耐候性を得ることができるという効果
がある。According to the invention of claim 3, in the invention of claim 1 or 2, the layer containing at least one of the wavelength conversion substance and the light absorber is formed of glass, so that the compound semiconductor is more preferable than the resin. In addition to being able to withstand high temperatures, a substance with a high melting point, such as glass, can be used as a binding material for wavelength conversion substances and light absorbers, and resin materials such as epoxies that have been conventionally used for this purpose. Compared with, there is an effect that the weather resistance of each step can be obtained.
【００７４】請求項４の発明は、請求項１または２の発
明において、前記透光性基板の他方の面を非鏡面とした
ので、波長変換物質、光吸収体がより強固に結着し、ま
た、素子内で発生した光が全反射して素子内にとどまる
確率が減るという効果がある。According to the invention of claim 4, in the invention of claim 1 or 2, since the other surface of the transparent substrate is a non-mirror surface, the wavelength conversion substance and the light absorber are more firmly bound, Further, there is an effect that the probability that the light generated in the element is totally reflected and stays in the element is reduced.
【００７５】請求項５の発明は、請求項１または２の発
明において、前記透光性基板の他方の面に複数個の凹部
を形成し、前記凹部内に前記波長変換物質と光吸収体と
のうち少なくとも一方を充填し、前記凹部に透光性の平
板材料を覆設したので、凹部の形状を制御することによ
って、波長変換物質、光吸収体の量を制御することが可
能となり、同一条件での形成、あるいは、濃度や量に定
量的な傾斜をつけることができるという効果がある。According to a fifth aspect of the invention, in the first or second aspect of the invention, a plurality of recesses are formed on the other surface of the transparent substrate, and the wavelength conversion substance and the light absorber are provided in the recesses. Since at least one of the above is filled and the translucent flat plate material is provided in the recess, it is possible to control the amounts of the wavelength conversion substance and the light absorber by controlling the shape of the recess. There is an effect that it can be formed under the conditions, or that the concentration and amount can be quantitatively graded.
【００７６】請求項６の発明は、請求項１または２の発
明において、前記透光性基板の他方の面側の周端部を除
去して切削部を形成し、前記波長変換物質と光吸収体と
のうち少なくとも一方を含む層を前記切削部に設けたの
で、素子の横方向へ放射される光を波長変換物質、光吸
収体に部分的にでも導くことが可能となり、光の利用効
率がよくなり、また色味もよくなるという効果がある。According to a sixth aspect of the present invention, in the first or second aspect of the invention, the peripheral portion on the other surface side of the transparent substrate is removed to form a cutting portion, and the wavelength converting substance and the light absorbing material are absorbed. Since the layer including at least one of the body and the body is provided in the cutting portion, it is possible to partially guide the light emitted in the lateral direction of the element to the wavelength conversion substance and the light absorber, and the light utilization efficiency is improved. It has the effect of improving the color tone and the color tone.
【００７７】請求項７の発明は、請求項１または２の発
明において、前記化合物半導体の周端部及び前記透光性
基板の一方の面側の周端部を除去して切削部を形成し前
記波長変換物質と光吸収体とのうち少なくとも一方を含
む層を前記切削部に設けたので、請求項６と同様の効果
を奏し、更に素子の横方向の光の取り出し効率がよくな
るという効果がある。According to a seventh aspect of the invention, in the first or second aspect of the invention, the peripheral edge portion of the compound semiconductor and the peripheral edge portion on one surface side of the transparent substrate are removed to form a cut portion. Since the layer including at least one of the wavelength conversion substance and the light absorber is provided in the cutting portion, the same effect as in claim 6 is obtained, and further, the effect of improving the light extraction efficiency in the lateral direction of the element is obtained. is there.
【００７８】請求項８の発明は、請求項１または２の発
明において、前記波長変換物質と光吸収体とのうち少な
くとも一方を含む層において、前記透光性基板に対向す
る面の反対側の面上に光反射機能を有する薄膜を形成し
たので、ファイスアップで実装し、薄膜側を印刷基板な
どにダイボンディングすることによって、反射の条件な
ども均一に、同一条件で形成することができるという効
果がある。According to an eighth aspect of the present invention, in the first or second aspect of the present invention, a layer including at least one of the wavelength conversion substance and the light absorber is provided on the side opposite to the surface facing the transparent substrate. Since a thin film having a light reflection function is formed on the surface, it is possible to mount it by face-up and die-bond the thin film side to a printed circuit board, so that the reflection conditions can be formed uniformly under the same conditions. effective.
【００７９】請求項９の発明は、請求項１または２の発
明において、前記透光性基板の他方の面上に、前記波長
変換物質と光吸収体とのうち少なくとも一方を含む層を
複数積層したので、簡便に、波長変換物質、光吸収体濃
度の量に傾斜をつけたり、色味をよくする仕組みを、同
一条件で形成することができるという効果がある。According to a ninth aspect of the invention, in the first or second aspect of the invention, a plurality of layers containing at least one of the wavelength conversion substance and the light absorber are laminated on the other surface of the transparent substrate. Therefore, there is an effect that it is possible to easily form a mechanism for inclining the amounts of the wavelength conversion substance and the light absorber concentration or improving the tint under the same conditions.
【００８０】請求項１０の発明は、請求項９の発明にお
いて、前記透光性基板の屈折率は周囲に存在する封止物
質または大気の屈折率よりも大きく、前記波長変換物質
と光吸収体とのうち少なくとも一方を含む複数の層の各
屈折率は、互いに異なり、前記透光性基板の屈折率より
も小さく且つ前記周囲に存在する封止物質または大気の
屈折率よりも大きく、前記透光性基板から離れる層であ
るほど屈折率は低下するので、光の取りだし効率が向上
するという効果がある。According to a tenth aspect of the invention, in the invention of the ninth aspect, the refractive index of the translucent substrate is higher than the refractive index of the surrounding sealing material or the atmosphere, and the wavelength conversion substance and the light absorber. Each of the plurality of layers including at least one of the above is different from each other, is smaller than the refractive index of the translucent substrate, and is larger than the refractive index of the sealing substance or the atmosphere present in the surroundings, Since the refractive index decreases as the layer is farther from the optical substrate, there is an effect that the light extraction efficiency is improved.
【００８１】請求項１１の発明は、前記透光性基板の一
方の面上に発光する化合物半導体を積層してウェハーを
形成し、前記透光性基板の他方の面上に、前記化合物半
導体の発光によって励起され、励起波長と異なる波長の
光を放射する波長変換物質と、前記化合物半導体または
波長変換物質の発光の一部を吸収する光吸収体とのうち
少なくとも一方を含む層を形成した後、前記ウェハーを
個々の素子に分割するので、従来のように個々の素子毎
に製作するのに比べて、均質な発光素子を一括して簡便
に作ることが出来るという効果がある。According to an eleventh aspect of the invention, a compound semiconductor which emits light is laminated on one surface of the transparent substrate to form a wafer, and the compound semiconductor is formed on the other surface of the transparent substrate. After forming a layer containing at least one of a wavelength conversion substance that is excited by light emission and emits light having a wavelength different from the excitation wavelength, and a light absorber that absorbs a part of light emission of the compound semiconductor or the wavelength conversion substance. Since the wafer is divided into individual elements, there is an effect that homogeneous light emitting elements can be collectively and simply produced, as compared with the conventional production of individual elements.
【００８２】請求項１２の発明は、請求項１１の発明に
おいて、個々の素子に分割する前の前記ウェハーにおい
て、前記透光性基板の他方の面上に、前記波長変換物質
と光吸収体とのうち少なくとも一方を分散させた樹脂を
塗布し、スペーサを用いて前記樹脂が一定の厚みになる
ように制御しつつ、スキージで余分な前記樹脂を除去す
ることによって、前記波長変換物質と光吸収体とのうち
少なくとも一方を含む層を形成して、硬化させるので、
均質な膜厚の層を有する発光素子を簡便に作ることがで
きるという効果がある。According to a twelfth aspect of the present invention, in the invention of the eleventh aspect, the wavelength conversion substance and the light absorber are provided on the other surface of the transparent substrate in the wafer before being divided into individual elements. Of the wavelength conversion substance and light absorption by removing at least one resin with a squeegee while controlling the resin so that the resin has a constant thickness by using a spacer By forming a layer containing at least one of the body and curing,
There is an effect that it is possible to easily manufacture a light emitting element having a layer having a uniform film thickness.
【００８３】請求項１３の発明は、請求項１１の発明に
おいて、個々の素子に分割する前の前記ウェハーにおい
て、前記透光性基板の他方の面上に、前記波長変換物質
と光吸収体とのうち少なくとも一方を含む樹脂で形成さ
れた樹脂シートを貼りつけることによって、前記波長変
換物質と光吸収体とのうち少なくとも一方を含む層を形
成するので、予めシートを作り、シートを作るのに最も
適した処理方法で均質かつ良質のシートを大量に作って
おけるという効果がある。According to a thirteenth aspect of the invention, in the eleventh aspect of the invention, the wavelength conversion substance and the light absorber are provided on the other surface of the light transmissive substrate in the wafer before being divided into individual elements. Since a layer containing at least one of the wavelength conversion substance and the light absorber is formed by adhering a resin sheet formed of a resin containing at least one of the It has the effect that a large amount of homogeneous and good quality sheets can be produced by the most suitable processing method.
【００８４】請求項１４の発明は、請求項１１の発明に
おいて、個々の素子に分割する前の前記ウェハーにおい
て、前記透光性基板の他方の面に非鏡面加工を施した
後、前記波長変換物質と光吸収体とのうち少なくとも一
方を含む層を形成して、個々の素子に分割するので、波
長変換物質、光吸収体がより強固に結着し、また、素子
内で発生した光が全反射して素子内にとどまる確率が減
った発光素子を作ることができるという効果がある。According to a fourteenth aspect of the present invention, in the eleventh aspect of the invention, the wavelength conversion is performed after the other surface of the transparent substrate is subjected to non-mirror surface processing in the wafer before being divided into individual elements. Since the layer containing at least one of the substance and the light absorber is formed and divided into individual elements, the wavelength conversion substance and the light absorber are more firmly bound, and the light generated in the element is There is an effect that it is possible to manufacture a light emitting element in which the probability of being totally reflected and staying in the element is reduced.
【００８５】請求項１５の発明は、請求項１１の発明に
おいて、個々の素子に分割する前の前記ウェハーにおい
て、前記透光性基板の他方の面上に、複数個の均一形状
をした凹部を形成し、前記波長変換物質と光吸収体との
うち少なくとも一方を前記各凹部に略同一量充填して、
前記凹部に透光性の平板材料を覆設した後、個々の素子
に分割するので、凹部の形状を制御することによって、
波長変換物質、光吸収体の量を制御し、同一条件で形成
でき、濃度や量に定量的な傾斜をつけた発光素子を作る
ことができるという効果がある。According to a fifteenth aspect of the invention, in the invention of the eleventh aspect, in the wafer before being divided into individual elements, a plurality of recesses having a uniform shape are formed on the other surface of the transparent substrate. Formed, at least one of the wavelength conversion material and the light absorber is filled in substantially the same amount in each recess,
After covering the recess with a light-transmissive flat plate material, it is divided into individual elements, so that by controlling the shape of the recess,
The effects of controlling the amounts of the wavelength conversion substance and the light absorber, forming them under the same conditions, and producing a light emitting element with a quantitative gradient in concentration and amount can be produced.
【００８６】請求項１６の発明は、請求項１１の発明に
おいて、個々の素子に分割する前の前記ウェハーにおい
て、前記透光性基板の他方の面側の周端部を除去して切
削部を成し、前記透光性基板の他方の面上と前記切削部
とに波長変換物質と光吸収体とのうち少なくとも一方を
含む層を形成した後、個々の素子に分割するので、素子
の横方向へ放射される光を波長変換物質、光吸収体に部
分的にでも導いて、光の利用効率がよく、色味もよい発
光素子を作ることができるという効果がある。According to a sixteenth aspect of the present invention, in the invention of the eleventh aspect, in the wafer before being divided into individual elements, the peripheral edge portion on the other surface side of the transparent substrate is removed to form a cutting portion. Since a layer containing at least one of a wavelength conversion substance and a light absorber is formed on the other surface of the translucent substrate and the cut portion, it is divided into individual elements. There is an effect that the light emitted in the direction can be partially guided to the wavelength conversion substance and the light absorber to make a light emitting device having high light utilization efficiency and good color.
【００８７】請求項１７の発明は、請求項１１の発明に
おいて、個々の素子に分割する前の前記ウェハーにおい
て、前記化合物半導体及び前記透光性基板の一方の面側
の周端部にメサエッチを施して切削部を成し、前記透光
性基板の他方の面上に前記波長変換物質と光吸収体との
うち少なくとも一方を含む層を形成して、個々の素子に
分割後、前記波長変換物質と光吸収体とのうち少なくと
も一方を含む絶縁性の樹脂を前記切削部に設けることに
より素子と実装基板との接着剤として用い、前記化合物
半導体の層を前記実装基板側に配置したフェイスダウン
状態で実装するので、請求項１６と同様の効果を奏し、
更に素子の横方向の光の取り出し効率がよい発光素子を
作ることができるという効果がある。According to a seventeenth aspect of the present invention, in the eleventh aspect of the present invention, a mesa etch is applied to a peripheral edge portion of one side of the compound semiconductor and the transparent substrate in the wafer before being divided into individual devices. To form a cutting portion, form a layer containing at least one of the wavelength conversion substance and the light absorber on the other surface of the translucent substrate, and after dividing into individual elements, the wavelength conversion. A face down in which an insulating resin containing at least one of a substance and a light absorber is used as an adhesive between an element and a mounting board by providing the cutting section with the compound semiconductor layer disposed on the mounting board side. Since it is mounted in the state, the same effect as that of claim 16 is obtained,
Further, there is an effect that it is possible to fabricate a light emitting device having a high light extraction efficiency in the lateral direction of the device.
【００８８】請求項１８の発明は、請求項１１の発明に
おいて、個々の素子に分割する前の前記ウェハーにおい
て、前記波長変換物質と光吸収体とのうち少なくとも一
方を含む層の、前記透光性基板に対向する面の反対側の
面上に光反射機能を有する薄膜を形成した後、個々の発
光素子に分割するので、フェイスアップで実装し、薄膜
側を印刷基板などにダイボンディングした際に、反射の
条件なども均一に同一条件で形成した発光素子を作るこ
とができるという効果がある。According to a eighteenth aspect of the invention, in the eleventh aspect of the invention, in the wafer before being divided into individual elements, the light transmitting layer of the layer containing at least one of the wavelength conversion material and the light absorber is formed. After forming a thin film having a light reflecting function on the surface opposite to the surface facing the flexible substrate, it is divided into individual light emitting elements, so it is mounted face up, and when the thin film side is die-bonded to a printed board etc. In addition, there is an effect that it is possible to fabricate a light emitting element formed under the same reflection condition.
【００８９】請求項１９の発明は、請求項１１の発明に
おいて、前記波長変換物質と光吸収体との少なくとも一
方を分散させた樹脂シートを形成し、個々の素子に分割
する前の前記ウェハーにおいて、前記透光性基板の他方
の面上に複数の前記樹脂シートを積層して貼りつけた
後、個々の素子に分割するので、簡便に、波長変換物
質、光吸収体濃度の量に傾斜をつけたり、色味を良くす
る仕組みを、同一条件で形成した発光素子を作ることが
できるという効果がある。According to a nineteenth aspect of the invention, in the wafer of the eleventh aspect, the resin sheet in which at least one of the wavelength conversion substance and the light absorber is dispersed is formed, and the wafer is not divided into individual elements. Since the plurality of resin sheets are laminated and attached on the other surface of the transparent substrate and then divided into individual elements, it is easy to make a gradient in the amount of the wavelength conversion substance and the light absorber concentration. There is an effect that it is possible to fabricate a light emitting element formed under the same condition as a mechanism for applying or improving the color.
【００９０】請求項２０の発明は、請求項１１の発明に
おいて、個々の素子に切断する前の前記ウェハーを基材
とし、前記透光性基板の他方の面上に前記波長変換物質
と光吸収体とのうち少なくとも一方を含む樹脂層を印刷
によって形成するので、波長変換物質、光吸収体の分布
を細かく制御し、なおかつ、再現性も高い発光素子を作
ることができるという効果がある。この方法によれば、
簡便に、同一条件のものを形成できることは当然である
が、なおかつ、濃度や量に差を設けることも容易であ
り、この結果、好ましい、色味や、配光などを得ること
ができるという効果がある。A twentieth aspect of the invention is the invention of the eleventh aspect, wherein the wafer before being cut into individual elements is used as a base material, and the wavelength conversion substance and the light absorption are provided on the other surface of the transparent substrate. Since the resin layer containing at least one of the body and the body is formed by printing, there is an effect that the distribution of the wavelength conversion substance and the light absorber can be finely controlled and a light emitting element having high reproducibility can be manufactured. According to this method
It is natural that the same conditions can be easily formed, but it is also easy to provide a difference in concentration and amount, and as a result, preferable tint, light distribution, etc. can be obtained. There is.
【００９１】請求項２１の発明は、請求項１３の発明に
おいて、透明樹脂で形成した樹脂シートを基材とし、前
記樹脂シート上に波長変換物質と光吸収体とのうち少な
くとも一方を含む樹脂層を印刷により形成した後、前記
透光性基板の他方の面上に前記樹脂シートを貼りつける
ので、予めシートを作り、シートを作るのに最も適した
処理方法で、均質かつ良質のシートを大量に作っておく
ことができ、且つ波長変換物質、光吸収体の分布を細か
く制御し、なおかつ、再現性も高い発光素子を作ること
ができるという効果がある。この方法によれば、簡便
に、同一条件のものを形成できることは当然であるが、
なおかつ、濃度や量に差を設けることも容易であり、こ
の結果、好ましい、色味や、配光などを得ることができ
るという効果がある。According to a twenty-first aspect of the invention, in the invention of the thirteenth aspect, a resin sheet formed of a transparent resin is used as a base material, and a resin layer containing at least one of a wavelength conversion substance and a light absorber on the resin sheet. After forming by printing, the resin sheet is pasted on the other surface of the translucent substrate, so that a sheet is prepared in advance, and a uniform and high-quality sheet is prepared in a large amount by a treatment method most suitable for making the sheet. It is possible to fabricate a light emitting element which can be prepared in advance, and which is capable of finely controlling the distribution of the wavelength conversion substance and the light absorber and which is also highly reproducible. According to this method, it is natural that the same conditions can be formed easily.
Moreover, it is easy to provide a difference in density and amount, and as a result, there is an effect that preferable tint, light distribution, and the like can be obtained.
【００９２】請求項２２の発明は、請求項２０の発明に
おいて、前記印刷はスクリーン印刷の手法を用い、マス
クを用いて前記透光性基板の他方の面上の必要箇所に、
前記波長変換物質と光吸収体とのうち少なくとも一方を
含む樹脂を塗布し、余分な量の前記樹脂はスキージで除
去することによって、必要箇所に必要量の樹脂層を形成
したので、極めて簡便に、略同一厚さの波長変換物質、
光吸収体の層を設けた発光素子を作ることができるとい
う効果がある。According to a twenty-second aspect of the invention, in the twenty-first aspect of the invention, the printing is performed by a screen printing method, and a mask is used to form a desired portion on the other surface of the light-transmissive substrate.
A resin containing at least one of the wavelength conversion substance and the light absorber is applied, and an excessive amount of the resin is removed with a squeegee, so that a required amount of a resin layer is formed, so that it is extremely simple. , Wavelength conversion material of approximately the same thickness,
There is an effect that a light emitting element provided with a layer of a light absorber can be manufactured.
【００９３】請求項２３の発明は、請求項２１の発明に
おいて、前記印刷はスクリーン印刷の手法を用い、マス
クを用いて前記樹脂シート上の必要箇所に、前記波長変
換物質と光吸収体とのうち少なくとも一方を含む樹脂を
塗布し、余分な量の前記樹脂はスキージで除去すること
によって、必要箇所に必要量の樹脂層を形成したので、
請求項２２と同様の効果を奏する。According to a twenty-third aspect of the present invention, in the twenty-first aspect, the printing is performed by a screen printing method, and the wavelength conversion substance and the light absorber are provided at required positions on the resin sheet using a mask. By applying a resin containing at least one of them, the excess amount of the resin was removed with a squeegee, so that the required amount of the resin layer was formed,
The same effect as in claim 22 is achieved.
【００９４】請求項２４の発明は、請求項２０の発明に
おいて、前記印刷はインクジェット印刷のドット式印刷
の手法を用い、前記波長変換物質と光吸収体とのうち少
なくとも一方を含む樹脂を、ノズルを用いて前記透光性
基板の他方の面上の必要箇所に適量滴下することにより
樹脂層を形成したので、波長変換物質、光吸収体の配
置、量を自由にコントロールした発光素子を作ることが
できるという効果がある。In a twenty-fourth aspect of the present invention based on the twenty-first aspect, the printing uses a dot-type printing method of ink jet printing, and the resin containing at least one of the wavelength conversion substance and the light absorber is used as a nozzle. Since a resin layer was formed by dropping an appropriate amount on the other surface of the translucent substrate using, a light emitting element in which the arrangement and the amount of the wavelength conversion substance and the light absorber were freely controlled was prepared. There is an effect that can be.
【００９５】請求項２５の発明は、請求項２１の発明に
おいて、前記印刷はインクジェット印刷のドット式印刷
の手法を用い、前記波長変換物質と光吸収体とのうち少
なくとも一方を含む樹脂を、ノズルを用いて前記樹脂シ
ート上の必要箇所に適量滴下することにより樹脂層を形
成したので、請求項２４と同様の効果を奏する。In a twenty-fifth aspect of the present invention based on the twenty-first aspect, the printing uses a dot-type printing method of ink jet printing, and a nozzle containing a resin containing at least one of the wavelength conversion substance and the light absorber is used. Since the resin layer is formed by dropping an appropriate amount on a necessary portion of the resin sheet by using, the same effect as that of the twenty-fourth aspect can be obtained.
【００９６】請求項２６の発明は、請求項２２または２
４の発明において、前記印刷は多色印刷の手法を用いる
ことにより、前記透光性基板の他方の面上の各場所毎
に、前記波長変換物質と光吸収体とのうち少なくとも一
方を含む樹脂層の厚み、及び前記樹脂層内に分散させた
前記波長変換物質、光吸収体の種類、濃度に変化を持た
せたので、複数の波長変換物質、光吸収体を用い、その
比率を自由に変化させた発光素子を作ることができると
いう効果がある。The invention of claim 26 is based on claim 22 or 2
In the invention of claim 4, the printing is performed by using a multicolor printing method, and a resin containing at least one of the wavelength conversion substance and the light absorber is provided for each place on the other surface of the transparent substrate. Since the thickness of the layer and the wavelength conversion substance dispersed in the resin layer and the type and concentration of the light absorber are changed, a plurality of wavelength conversion substances and light absorbers are used, and the ratio can be freely set. There is an effect that a changed light emitting element can be manufactured.
【００９７】請求項２７の発明は、請求項２３または２
５の発明において、前記印刷は多色印刷の手法を用いる
ことにより、前記樹脂シート上の各場所毎に、前記波長
変換物質と光吸収体とのうち少なくとも一方を含む樹脂
層の厚み、及び前記樹脂層内に分散させた前記波長変換
物質、光吸収体の種類、濃度に変化を持たせたので、請
求項２６と同様の効果を奏する。The invention of claim 27 is based on claim 23 or 2
In the invention of claim 5, the printing is performed by using a multicolor printing method, whereby the thickness of the resin layer containing at least one of the wavelength conversion substance and the light absorber is provided for each location on the resin sheet, and Since the type and the concentration of the wavelength conversion substance and the light absorber dispersed in the resin layer are changed, the same effect as the twenty-sixth aspect can be obtained.
【００９８】請求項２８の発明は、請求項２０の発明に
おいて、前記印刷はフォトルミネッセンスの手法を用い
ることにより、前記ウェハーの微小領域毎の発光強度を
分光検出し、これをコンピュータにより解析した結果に
基づいて、素子毎の色むらや光量むらが最小になるよう
に、前記波長変換物質と光吸収体とのうち少なくとも一
方を含む樹脂層の厚み、及び波長変換物質、光吸収体の
種類、量、濃度を制御しつつ、印刷の手法により前記透
光性基板の他方の面上に前記樹脂層を形成したので、同
一ウェハー上に作られた発光素子においても、その場所
によって、明るさや、色味が異なるが、これを予め測定
し、補正するようなパターンの波長変換物質、光吸収体
の配置を行って、全体として、非常に均一な発光素子を
作ることができるという効果がある。According to a twenty-eighth aspect of the invention, in the twenty-first aspect of the invention, the printing is performed by using a photoluminescence method, the emission intensity of each minute region of the wafer is spectrally detected, and the result is analyzed by a computer. On the basis of the thickness of the resin layer containing at least one of the wavelength conversion substance and the light absorber, and the wavelength conversion substance, the type of the light absorber, so that color unevenness and light amount unevenness of each element are minimized. Since the resin layer was formed on the other surface of the translucent substrate by a printing method while controlling the amount and the concentration, even in a light emitting element formed on the same wafer, depending on its location, the brightness or Although the colors are different, it is possible to make a very uniform light emitting device as a whole by measuring in advance and arranging the wavelength conversion material and the light absorber in a pattern to correct it. There is an effect that.
【００９９】請求項２９の発明は、請求項２１の発明に
おいて、前記印刷はフォトルミネッセンスの手法を用い
ることにより、前記ウェハーの微小領域毎の発光強度を
分光検出し、これをコンピュータにより解析した結果に
基づいて、素子毎の色むらや光量むらが最小になるよう
に、前記波長変換物質と光吸収体とのうち少なくとも一
方を含む樹脂層の厚み、及び波長変換物質、光吸収体の
種類、量、濃度を制御しつつ、印刷の手法により前記透
光性基板の他方の面上に貼りつける樹脂シート上に前記
樹脂層を形成したので、請求項２８と同様の効果があ
る。According to a twenty-ninth aspect of the invention, in the invention of the twenty-first aspect, the printing is performed by using a photoluminescence method, the emission intensity of each minute region of the wafer is spectrally detected, and the result is analyzed by a computer. On the basis of the thickness of the resin layer containing at least one of the wavelength conversion substance and the light absorber, and the wavelength conversion substance, the type of the light absorber, so that color unevenness and light amount unevenness of each element are minimized. Since the resin layer is formed on the resin sheet attached to the other surface of the translucent substrate by a printing method while controlling the amount and the density, the same effect as in claim 28 can be obtained.
【図１】本発明の実施形態１を示す概略図である。FIG. 1 is a schematic diagram showing a first embodiment of the present invention.
【図２】本発明の実施形態２を示す概略図である。FIG. 2 is a schematic diagram showing Embodiment 2 of the present invention.
【図３】本発明の実施形態３を示す概略図である。FIG. 3 is a schematic diagram showing Embodiment 3 of the present invention.
【図４】本発明の実施形態４を示す概略図である。FIG. 4 is a schematic diagram showing Embodiment 4 of the present invention.
【図５】本発明の実施形態６を示す概略図である。FIG. 5 is a schematic diagram showing Embodiment 6 of the present invention.
【図６】本発明の実施形態７を示す概略図である。FIG. 6 is a schematic diagram showing Embodiment 7 of the present invention.
【図７】本発明の実施形態８を示す概略図である。FIG. 7 is a schematic diagram showing Embodiment 8 of the present invention.
【図８】本発明の実施形態９を示す概略図である。FIG. 8 is a schematic diagram showing Embodiment 9 of the present invention.
【図９】本発明の実施形態１０を示す概略図である。FIG. 9 is a schematic diagram showing Embodiment 10 of the present invention.
【図１０】本発明の実施形態１１を示す概略図である。FIG. 10 is a schematic diagram showing Embodiment 11 of the present invention.
【図１１】本発明の実施形態１２を示す概略図である。FIG. 11 is a schematic diagram showing Embodiment 12 of the present invention.
【図１２】本発明の実施形態１６を示す概略図である。FIG. 12 is a schematic diagram showing Embodiment 16 of the present invention.
１００ 透光性基板 １０１ ｎ型半導体層 １０２ ｐ型半導体層 １０３ 発光層 １０４ ｐ側電極 １０５ ｎ側電極 ２００ 蛍光体 ２０１ 樹脂 100 translucent substrate 101 n-type semiconductor layer 102 p-type semiconductor layer 103 light emitting layer 104 p-side electrode 105 n-side electrode 200 phosphor 201 resin
───────────────────────────────────────────────────── フロントページの続き (72)発明者 木村 秀吉 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 塩濱 英二 大阪府門真市大字門真1048番地松下電工株 式会社内 Ｆターム(参考） 5F041 AA05 AA09 AA12 CA40 CA46 DA01 DA07 DA36 FF11 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Hideyoshi Kimura 1048, Kadoma, Kadoma-shi, Osaka Matsushita Electric Works Co., Ltd. Inside the company (72) Inventor Eiji Shiohama 1048, Kadoma, Kadoma-shi, Osaka Matsushita Electric Works Co., Ltd. Inside the company F-term (reference) 5F041 AA05 AA09 AA12 CA40 CA46 DA01 DA07 DA36 FF11
Claims (29)
面上に積層して発光する化合物半導体と、前記透光性基
板の他方の面上に設けられて前記化合物半導体の発光に
よって励起され、励起波長と異なる波長の光を放射する
波長変換物質と前記化合物半導体または波長変換物質の
発光の一部を吸収する光吸収体とのうち少なくとも一方
を含む層とを備えたことを特徴とする発光素子。1. A transparent substrate, a compound semiconductor that emits light by being stacked on one surface of the transparent substrate, and light emission of the compound semiconductor that is provided on the other surface of the transparent substrate. And a layer containing at least one of a wavelength conversion substance that emits light having a wavelength different from the excitation wavelength and a light absorber that absorbs a part of the light emission of the compound semiconductor or the wavelength conversion substance. Characteristic light emitting element.
記光吸収体は顔料または染料からなることを特徴とする
請求項１記載の発光素子。2. The light emitting device according to claim 1, wherein the wavelength conversion substance is made of a phosphor, and the light absorber is made of a pigment or a dye.
なくとも一方を含む層がガラスで形成されたことを特徴
とする請求項１または２記載の発光素子。3. The light emitting device according to claim 1, wherein the layer containing at least one of the wavelength conversion substance and the light absorber is formed of glass.
たことを特徴とする請求項１または２記載の発光素子。4. The light emitting device according to claim 1, wherein the other surface of the transparent substrate is a non-mirror surface.
部を形成し、前記凹部内に前記波長変換物質と光吸収体
とのうち少なくとも一方を充填し、前記凹部に透光性の
平板材料を覆設したことを特徴とする請求項１または２
記載の発光素子。5. A plurality of recesses are formed on the other surface of the transparent substrate, and the recesses are filled with at least one of the wavelength conversion substance and the light absorber, and the recesses are transparent. 3. The flat plate material according to claim 1 is covered.
The light emitting device described.
除去して切削部を形成し、前記波長変換物質と光吸収体
とのうち少なくとも一方を含む層を前記切削部に設けた
ことを特徴とする請求項１または２記載の発光素子。6. A cutting portion is formed by removing a peripheral end portion on the other surface side of the transparent substrate, and a layer containing at least one of the wavelength conversion substance and the light absorber is formed on the cutting portion. The light emitting device according to claim 1 or 2, wherein the light emitting device is provided.
性基板の一方の面側の周端部を除去して切削部を形成し
前記波長変換物質と光吸収体とのうち少なくとも一方を
含む層を前記切削部に設けたことを特徴とする請求項１
または２記載の発光素子。7. A cut portion is formed by removing a peripheral edge portion of the compound semiconductor and a peripheral edge portion on one surface side of the transparent substrate to form at least one of the wavelength conversion substance and the light absorber. A layer including a layer is provided on the cutting portion.
Alternatively, the light emitting device according to the item 2.
なくとも一方を含む層において、前記透光性基板に対向
する面の反対側の面上に光反射機能を有する薄膜を形成
したことを特徴とする請求項１または２記載の発光素
子。8. A thin film having a light reflecting function is formed on a surface of the layer including at least one of the wavelength conversion material and the light absorber, the surface being opposite to the surface facing the transparent substrate. The light emitting device according to claim 1 or 2, which is characterized in that.
長変換物質と光吸収体とのうち少なくとも一方を含む層
を複数積層したことを特徴とする請求項１または２記載
の発光素子。9. The light emission according to claim 1, wherein a plurality of layers containing at least one of the wavelength conversion substance and the light absorber are laminated on the other surface of the translucent substrate. element.
する封止物質または大気の屈折率よりも大きく、前記波
長変換物質と光吸収体とのうち少なくとも一方を含む複
数の層の各屈折率は、互いに異なり、前記透光性基板の
屈折率よりも小さく且つ前記周囲に存在する封止物質ま
たは大気の屈折率よりも大きく、前記透光性基板から離
れる層であるほど屈折率は低下することを特徴とする請
求項９記載の発光素子。10. The refractive index of the translucent substrate is higher than the refractive index of the surrounding sealing material or atmosphere, and each of a plurality of layers including at least one of the wavelength conversion material and the light absorber. The refractive index is different from each other, is smaller than the refractive index of the transparent substrate and is larger than the refractive index of the sealing substance or the atmosphere existing in the surroundings, and the refractive index is greater as the layer is farther from the transparent substrate. 10. The light emitting device according to claim 9, wherein the light emitting device is reduced.
る化合物半導体を積層してウェハーを形成し、前記透光
性基板の他方の面上に、前記化合物半導体の発光によっ
て励起され、励起波長と異なる波長の光を放射する波長
変換物質と、前記化合物半導体または波長変換物質の発
光の一部を吸収する光吸収体とのうち少なくとも一方を
含む層を形成した後、前記ウェハーを個々の素子に分割
することを特徴とする発光素子の製造方法。11. A light emitting compound semiconductor is laminated on one surface of the transparent substrate to form a wafer, and is excited on the other surface of the transparent substrate by the light emission of the compound semiconductor, After forming a layer containing at least one of a wavelength conversion substance that emits light having a wavelength different from the excitation wavelength and a light absorber that absorbs a part of the emission of the compound semiconductor or the wavelength conversion substance, the wafers are individually separated. A method for manufacturing a light emitting device, characterized in that the device is divided into
ーにおいて、前記透光性基板の他方の面上に、前記波長
変換物質と光吸収体とのうち少なくとも一方を分散させ
た樹脂を塗布し、スペーサを用いて前記樹脂が一定の厚
みになるように制御しつつ、スキージで余分な前記樹脂
を除去することによって、前記波長変換物質と光吸収体
とのうち少なくとも一方を含む層を形成して、硬化させ
ることを特徴とする請求項１１記載の発光素子の製造方
法。12. A wafer in which at least one of the wavelength conversion substance and the light absorber is dispersed is applied onto the other surface of the transparent substrate in the wafer before being divided into individual elements. , A spacer is used to control the resin to have a constant thickness, and a squeegee removes the excess resin to form a layer containing at least one of the wavelength conversion substance and the light absorber. The method for manufacturing a light emitting device according to claim 11, wherein the light emitting device is cured.
ーにおいて、前記透光性基板の他方の面上に、前記波長
変換物質と光吸収体とのうち少なくとも一方を含む樹脂
で形成された樹脂シートを貼りつけることによって、前
記波長変換物質と光吸収体とのうち少なくとも一方を含
む層を形成することを特徴とする請求項１１記載の発光
素子の製造方法。13. A resin formed of a resin containing at least one of the wavelength conversion substance and a light absorber on the other surface of the transparent substrate in the wafer before being divided into individual elements. The method for manufacturing a light emitting device according to claim 11, wherein a layer containing at least one of the wavelength conversion substance and the light absorber is formed by attaching a sheet.
ーにおいて、前記透光性基板の他方の面に非鏡面加工を
施した後、前記波長変換物質と光吸収体とのうち少なく
とも一方を含む層を形成して、個々の素子に分割するこ
とを特徴とする請求項１１記載の発光素子の製造方法。14. The wafer, before being divided into individual elements, contains at least one of the wavelength conversion substance and the light absorber after the other surface of the transparent substrate is non-mirror-finished. The method for manufacturing a light emitting device according to claim 11, wherein a layer is formed and the device is divided into individual devices.
ーにおいて、前記透光性基板の他方の面上に、複数個の
均一形状をした凹部を形成し、前記波長変換物質と光吸
収体とのうち少なくとも一方を前記各凹部に略同一量充
填して、前記凹部に透光性の平板材料を覆設した後、個
々の素子に分割することを特徴とする請求項１１記載の
発光素子の製造方法。15. In the wafer before being divided into individual elements, a plurality of uniformly shaped recesses are formed on the other surface of the light transmissive substrate, and the wavelength conversion substance and the light absorber are formed. 12. The light emitting device according to claim 11, wherein at least one of the recesses is filled in substantially the same amount, and the recess is covered with a light-transmissive flat plate material, and then divided into individual devices. Production method.
ーにおいて、前記透光性基板の他方の面側の周端部を除
去して切削部を成し、前記透光性基板の他方の面上と前
記切削部とに波長変換物質と光吸収体とのうち少なくと
も一方を含む層を形成した後、個々の素子に分割するこ
とを特徴とする請求項１１記載の発光素子の製造方法。16. In the wafer before being divided into individual elements, a peripheral portion on the other surface side of the transparent substrate is removed to form a cutting portion, and the other surface of the transparent substrate is formed. 12. The method for manufacturing a light emitting device according to claim 11, wherein a layer containing at least one of a wavelength conversion substance and a light absorber is formed on the upper part and the cutting part and then divided into individual devices.
ーにおいて、前記化合物半導体及び前記透光性基板の一
方の面側の周端部にメサエッチを施して切削部を成し、
前記透光性基板の他方の面上に前記波長変換物質と光吸
収体とのうち少なくとも一方を含む層を形成して、個々
の素子に分割後、前記波長変換物質と光吸収体とのうち
少なくとも一方を含む絶縁性の樹脂を前記切削部に設け
ることにより素子と実装基板との接着剤として用い、前
記化合物半導体の層を前記実装基板側に配置したフェイ
スダウン状態で実装することを特徴とする請求項１１記
載の発光素子の製造方法。17. In the wafer before being divided into individual elements, mesa etching is applied to a peripheral edge portion on one surface side of the compound semiconductor and the transparent substrate to form a cutting portion,
A layer containing at least one of the wavelength conversion substance and the light absorber is formed on the other surface of the light transmissive substrate, and after dividing into individual elements, the wavelength conversion substance and the light absorber are An insulating resin containing at least one is used as an adhesive between an element and a mounting substrate by providing the insulating resin in the cutting portion, and the compound semiconductor layer is mounted in a face-down state in which the layer is disposed on the mounting substrate side. The method for manufacturing a light emitting device according to claim 11.
ーにおいて、前記波長変換物質と光吸収体とのうち少な
くとも一方を含む層の、前記透光性基板に対向する面の
反対側の面上に光反射機能を有する薄膜を形成した後、
個々の発光素子に分割することを特徴とする請求項１１
記載の発光素子の製造方法。18. The wafer, before being divided into individual elements, on the surface of the layer containing at least one of the wavelength conversion material and the light absorber, which is opposite to the surface facing the transparent substrate. After forming a thin film with a light reflection function on
The device is divided into individual light emitting elements.
A method for manufacturing a light-emitting device as described above.
くとも一方を分散させた樹脂シートを形成し、個々の素
子に分割する前の前記ウェハーにおいて、前記透光性基
板の他方の面上に複数の前記樹脂シートを積層して貼り
つけた後、個々の素子に分割することを特徴とする請求
項１１記載の発光素子の製造方法。19. In the wafer before forming a resin sheet in which at least one of the wavelength converting substance and the light absorber is dispersed, and dividing the resin sheet into individual elements, the resin sheet is formed on the other surface of the transparent substrate. The method for manufacturing a light emitting device according to claim 11, wherein a plurality of the resin sheets are laminated and adhered, and then divided into individual devices.
ーを基材とし、前記透光性基板の他方の面上に前記波長
変換物質と光吸収体とのうち少なくとも一方を含む樹脂
層を印刷によって形成することを特徴とする請求項１１
記載の発光素子の製造方法。20. A resin layer containing at least one of the wavelength conversion substance and the light absorber is printed on the other surface of the transparent substrate, using the wafer as a base material before being cut into individual elements. It is formed by
A method for manufacturing a light-emitting device as described above.
とし、前記樹脂シート上に波長変換物質と光吸収体との
うち少なくとも一方を含む樹脂層を印刷により形成した
後、前記透光性基板の他方の面上に前記樹脂シートを貼
りつけることを特徴とする請求項１３記載の発光素子の
製造方法。21. A resin sheet formed of a transparent resin is used as a base material, and a resin layer containing at least one of a wavelength conversion substance and a light absorber is formed on the resin sheet by printing, and then the translucent substrate. 14. The method for manufacturing a light emitting device according to claim 13, wherein the resin sheet is attached to the other surface of the.
い、マスクを用いて前記透光性基板の他方の面上の必要
箇所に、前記波長変換物質と光吸収体とのうち少なくと
も一方を含む樹脂を塗布し、余分な量の前記樹脂はスキ
ージで除去することによって、必要箇所に必要量の樹脂
層を形成したことを特徴とする請求項２０記載の発光素
子の製造方法。22. A resin containing at least one of the wavelength conversion material and the light absorber at a required position on the other surface of the transparent substrate using a mask, using a screen printing method for the printing. 21. The method for manufacturing a light-emitting element according to claim 20, wherein a required amount of the resin layer is formed at a required position by applying a resin and removing an excessive amount of the resin with a squeegee.
い、マスクを用いて前記樹脂シート上の必要箇所に、前
記波長変換物質と光吸収体とのうち少なくとも一方を含
む樹脂を塗布し、余分な量の前記樹脂はスキージで除去
することによって、必要箇所に必要量の樹脂層を形成し
たことを特徴とする請求項２１記載の発光素子の製造方
法。23. A screen printing method is used for the printing, and a resin containing at least one of the wavelength conversion substance and the light absorber is applied to a necessary portion on the resin sheet by using a mask, 22. The method for manufacturing a light-emitting element according to claim 21, wherein a required amount of the resin layer is formed at a required location by removing the amount of the resin with a squeegee.
ト式印刷の手法を用い、前記波長変換物質と光吸収体と
のうち少なくとも一方を含む樹脂を、ノズルを用いて前
記透光性基板の他方の面上の必要箇所に適量滴下するこ
とにより樹脂層を形成したことを特徴とする請求項２０
記載の発光素子の製造方法。24. The printing is performed by a dot printing method of ink jet printing, and a resin containing at least one of the wavelength conversion substance and a light absorber is used for another surface of the transparent substrate by using a nozzle. 21. The resin layer is formed by dropping an appropriate amount on the above-mentioned necessary place.
A method for manufacturing a light-emitting device as described above.
ト式印刷の手法を用い、前記波長変換物質と光吸収体と
のうち少なくとも一方を含む樹脂を、ノズルを用いて前
記樹脂シート上の必要箇所に適量滴下することにより樹
脂層を形成したことを特徴とする請求項２１記載の発光
素子の製造方法。25. The printing is performed by a dot-type printing method of inkjet printing, and a resin containing at least one of the wavelength conversion substance and the light absorber is appropriately applied to a necessary portion on the resin sheet by using a nozzle. 22. The method for manufacturing a light emitting device according to claim 21, wherein the resin layer is formed by dropping.
とにより、前記透光性基板の他方の面上の各場所毎に、
前記波長変換物質と光吸収体とのうち少なくとも一方を
含む樹脂層の厚み、及び前記樹脂層内に分散させた前記
波長変換物質、光吸収体の種類、濃度に変化を持たせた
ことを特徴とする請求項２２または２４記載の発光素子
の製造方法。26. The printing is performed by using a multicolor printing method so that each position on the other surface of the transparent substrate is
The thickness of the resin layer containing at least one of the wavelength conversion substance and the light absorber, and the type and concentration of the wavelength conversion substance and the light absorber dispersed in the resin layer are changed. The method for manufacturing a light emitting device according to claim 22 or 24.
とにより、前記樹脂シート上の各場所毎に、前記波長変
換物質と光吸収体とのうち少なくとも一方を含む樹脂層
の厚み、及び前記樹脂層内に分散させた前記波長変換物
質、光吸収体の種類、濃度に変化を持たせたことを特徴
とする請求項２３または２５記載の発光素子の製造方
法。27. The printing is performed by using a multi-color printing method, whereby the thickness of the resin layer containing at least one of the wavelength conversion substance and the light absorber at each location on the resin sheet, and 26. The method for manufacturing a light emitting device according to claim 23, wherein the wavelength conversion substance and the light absorber dispersed in the resin layer are changed in kind and concentration.
法を用いることにより、前記ウェハーの微小領域毎の発
光強度を分光検出し、これをコンピュータにより解析し
た結果に基づいて、素子毎の色むらや光量むらが最小に
なるように、前記波長変換物質と光吸収体とのうち少な
くとも一方を含む樹脂層の厚み、及び波長変換物質、光
吸収体の種類、量、濃度を制御しつつ、印刷の手法によ
り前記透光性基板の他方の面上に前記樹脂層を形成した
ことを特徴とする請求項２０記載の発光素子の製造方
法。28. The printing is performed by using a photoluminescence method to spectrally detect the emission intensity of each minute region of the wafer, and based on the result of computer analysis of the emission intensity, color unevenness and light amount unevenness of each element are detected. The thickness of the resin layer containing at least one of the wavelength conversion substance and the light absorber, and the type, amount, and concentration of the wavelength conversion substance, the light absorber are controlled by a printing method so that 21. The method for manufacturing a light emitting device according to claim 20, wherein the resin layer is formed on the other surface of the translucent substrate.
法を用いることにより、前記ウェハーの微小領域毎の発
光強度を分光検出し、これをコンピュータにより解析し
た結果に基づいて、素子毎の色むらや光量むらが最小に
なるように、前記波長変換物質と光吸収体とのうち少な
くとも一方を含む樹脂層の厚み、及び波長変換物質、光
吸収体の種類、量、濃度を制御しつつ、印刷の手法によ
り前記透光性基板の他方の面上に貼りつける樹脂シート
上に前記樹脂層を形成したことを特徴とする請求項２１
記載の発光素子の製造方法。29. The printing uses a photoluminescence method to spectrally detect the emission intensity of each minute region of the wafer, and based on the result of computer analysis of this, unevenness of color and uneven light amount of each device. The thickness of the resin layer containing at least one of the wavelength conversion substance and the light absorber, and the type, amount, and concentration of the wavelength conversion substance, the light absorber are controlled by a printing method so that 22. The resin layer is formed on a resin sheet attached to the other surface of the translucent substrate.
A method for manufacturing a light-emitting device as described above.
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