JP2003046042A5 - A substrate, a package for storing semiconductor elements using the substrate, and a semiconductor device. - Google Patents
A substrate, a package for storing semiconductor elements using the substrate, and a semiconductor device. Download PDFInfo
- Publication number
- JP2003046042A5 JP2003046042A5 JP2001230630A JP2001230630A JP2003046042A5 JP 2003046042 A5 JP2003046042 A5 JP 2003046042A5 JP 2001230630 A JP2001230630 A JP 2001230630A JP 2001230630 A JP2001230630 A JP 2001230630A JP 2003046042 A5 JP2003046042 A5 JP 2003046042A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- package
- semiconductor device
- storing
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 title description 9
- 239000004065 semiconductor Substances 0.000 title description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Description
【特許請求の範囲】
【請求項１】
銀，チタン，クロム，バナジウムおよびタングステンのうちの少なくとも一種を０．２〜１０重量部、銅を９０〜９９．８重量部含有する金属成分が含浸された炭素質母材内に炭素繊維が分散された金属炭素複合体からなる基材と、
前記基材上下面に、前記基材側から鉄，鉄−ニッケル−コバルト合金または鉄−ニッケル合金からなる接着層と、モリブデン層と、銅層と、を順次積層して形成された金属層と、
前記基材の側面および前記金属層の表面に被着された銅メッキ層と、
を有する基体。
【請求項２】
前記銅層の厚みは、１００〜７００μｍであることを特徴とする請求項１記載の基体。
【請求項３】
半導体素子を載置するための載置部を有する請求項１又は請求項２に記載の基体と、
前記基体の上側主面に、前記載置部を囲繞するようにして取着され、貫通孔または切欠き部からなる入出力端子の取付部を有する枠体と、
前記取付部に嵌着された前記入出力端子と、
を具備した半導体素子収納用パッケージ。
【請求項４】
前記基体は、矩形状からなるとともに、その両端部にネジ止め部を有することを特徴とする請求項３に記載の半導体収納用パッケージ。
【請求項５】
請求項３又は請求項４に記載の半導体素子収納用パッケージと、
前記載置部に載置固定されるとともに前記入出力端子に電気的に接続された半導体素子と、
前記枠体の上面に取着された蓋体と、
を具備したことを特徴とする半導体装置。
[Claims]
[Claim 1]
Carbon fibers are dispersed in a carbonaceous base material impregnated with a metal component containing at least one of silver, titanium, chromium, vanadium and tungsten in an amount of 0.2 to 10 parts by weight and copper in an amount of 90 to 99.8 parts by weight. A base material made of a metal-carbon composite and
The base upper and lower surfaces, iron, iron from the substrate side - nickel - cobalt alloy or iron - an adhesive layer consisting of a nickel alloy, and a molybdenum layer, a copper layer, and sequentially stacked metal layer formed ,
A copper-plated layer adhered to the side surface of the base material and the surface of the metal layer ,
Substrate with.
2.
The Thickness of the copper layer, the substrate of claim 1, wherein it is 100～700Myuemu.
3.
The substrate according to claim 1 or 2, which has a mounting portion for mounting a semiconductor element, and the substrate.
A frame body that is attached to the upper main surface of the substrate so as to surround the above-mentioned mounting portion and has an input / output terminal mounting portion formed of a through hole or a notch.
With the input / output terminal fitted to the mounting portion,
Package for storing semiconductor elements.
4.
The semiconductor storage package according to claim 3, wherein the substrate has a rectangular shape and has screwed portions at both ends thereof.
5.
The semiconductor device storage package according to claim 3 or 4.
A semiconductor element that is mounted and fixed on the above-mentioned mounting portion and electrically connected to the input / output terminal,
A lid that is attached to an upper surface of the frame,
A semiconductor device characterized by being provided with.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001230630A JP2003046042A (en) | 2001-07-30 | 2001-07-30 | Semiconductor element for storing package and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001230630A JP2003046042A (en) | 2001-07-30 | 2001-07-30 | Semiconductor element for storing package and semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003046042A JP2003046042A (en) | 2003-02-14 |
| JP2003046042A5 true JP2003046042A5 (en) | 2008-03-06 |
Family
ID=19062807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001230630A Withdrawn JP2003046042A (en) | 2001-07-30 | 2001-07-30 | Semiconductor element for storing package and semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003046042A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4316540B2 (en) | 2005-06-24 | 2009-08-19 | 株式会社東芝 | Nonvolatile semiconductor memory device and method for manufacturing nonvolatile semiconductor memory device |
| CN102154816B (en) * | 2011-01-20 | 2012-08-22 | 天津市飞荣达科技有限公司 | FeCo alloy/CuO double-plating magnetic carbon fiber and preparation method and application |
-
2001
- 2001-07-30 JP JP2001230630A patent/JP2003046042A/en not_active Withdrawn
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5051243B2 (en) | Manufacturing method of semiconductor device | |
| EP1577905A3 (en) | Surface mountable polymeric PTC device with integral weld plate | |
| EP0875331A3 (en) | Solder alloy, substrate with solder alloy for mounting electronic part, member to be bonded of electronic part, and electronic-part-mounted substrate | |
| US20080296756A1 (en) | Heat spreader compositions and materials, integrated circuitry, methods of production and uses thereof | |
| WO2006086244A3 (en) | Carbonaceous composite heat spreader and associated methods | |
| JP2004528992A (en) | Lead-free brazing material | |
| US20090027857A1 (en) | Heat spreader constructions, intergrated circuitry, methods of forming heat spreader constructions, and methods of forming integrated circuitry | |
| US20070012477A1 (en) | Electronic component package including joint material having higher heat conductivity | |
| JP2006507688A5 (en) | ||
| JP2003046042A5 (en) | A substrate, a package for storing semiconductor elements using the substrate, and a semiconductor device. | |
| EP1049253A3 (en) | Surface acoustic wave device having bump electrodes and method for producing the same | |
| DE60233304D1 (en) | brazing | |
| EP1128423A3 (en) | Flip-Chip mounted electronic device with multi-layer electrodes | |
| JP2003234486A5 (en) | ||
| US20090079062A1 (en) | Semiconductor package and electronic device | |
| JP3659336B2 (en) | Package for storing semiconductor elements | |
| JP5225124B2 (en) | Piezoelectric device | |
| JP3554304B2 (en) | Semiconductor element storage package and semiconductor device | |
| JP3659306B2 (en) | Package for storing semiconductor elements | |
| JP2003046042A (en) | Semiconductor element for storing package and semiconductor device | |
| JP5224522B2 (en) | Piezoelectric vibrator and manufacturing method thereof | |
| JP2004080060A5 (en) | ||
| JP4397738B2 (en) | Electronic component package, method for manufacturing the same, and lid for electronic component package | |
| JP2571571Y2 (en) | Package for storing semiconductor elements | |
| JPH11176969A (en) | Seal cap component for ceramics package and ceramics package using the same |