JP2003043690A5 - - Google Patents
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- JP2003043690A5 JP2003043690A5 JP2001236460A JP2001236460A JP2003043690A5 JP 2003043690 A5 JP2003043690 A5 JP 2003043690A5 JP 2001236460 A JP2001236460 A JP 2001236460A JP 2001236460 A JP2001236460 A JP 2001236460A JP 2003043690 A5 JP2003043690 A5 JP 2003043690A5
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- JP
- Japan
- Prior art keywords
- group
- alicyclic hydrocarbon
- hydrocarbon group
- linear
- carbon atoms
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Description
【特許請求の範囲】
【請求項1】 (A)下記一般式(1)で表される酸分解性基含有繰り返し単位を有し、酸の作用によりアルカリ現像液に対する溶解速度が増大する樹脂、及び、(B)活性光線又は放射線の照射により酸を発生する化合物を含有するポジ型レジスト組成物において、酸分解性基含有繰り返し単位の平均含有率が異なる樹脂(A)を少なくとも2種含有することを特徴とするポジ型レジスト組成物。
【化1】
一般式(1)において、Rは水素原子又はメチル基を表し、Aは単結合又は連結基を表し、ALGは下記一般式(pI)〜一般式(pV)のいずれかを表す。
【化2】
(式中、R11は、メチル基、エチル基、n−プロピル基、イソプロピル基、n−ブチル基、イソブチル基又はsec−ブチル基を表し、Zは、炭素原子とともに脂環式炭化水素基を形成するのに必要な原子団を表す。
R12〜R16は、各々独立に、炭素数1〜4個の、直鎖もしくは分岐のアルキル基又は脂環式炭化水素基を表す。但し、R12〜R14のうち少なくとも1つ、及びR15、R16のいずれかは脂環式炭化水素基を表す。
R17〜R21は、各々独立に、水素原子、炭素数1〜4個の、直鎖もしくは分岐のアルキル基又は脂環式炭化水素基を表し、但し、R17〜R21のうち少なくとも1つは脂環式炭化水素基を表す。また、R19、R21のいずれかは炭素数1〜4個の、直鎖もしくは分岐のアルキル基又は脂環式炭化水素基を表す。
R22〜R25は、各々独立に、炭素数1〜4個の、直鎖もしくは分岐のアルキル基又は脂環式炭化水素基を表し、但し、R22〜R25のうち少なくとも1つは脂環式炭化水素基を表す。また、R23とR24は、互いに結合して環を形成していてもよい。)
【請求項2】 請求項1に記載のポジ型レジスト組成物によりレジスト膜を形成し、当該レジスト膜を露光、現像することを特徴とするパターン形成方法。
[Claims]
(A) a resin having an acid-decomposable group-containing repeating unit represented by the following general formula (1) and having a dissolution rate in an alkali developing solution increased by the action of an acid; and (B) an activity: A positive resist composition containing a compound capable of generating an acid upon irradiation with light or radiation, comprising at least two resins (A) having different average contents of the acid-decomposable group-containing repeating units. -Type resist composition.
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In the general formula (1), R represents a hydrogen atom or a methyl group, A represents a single bond or a linking group, and ALG represents any of the following general formulas (pI) to (pV).
Embedded image
(Wherein, R 11 represents a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group or a sec-butyl group, and Z represents an alicyclic hydrocarbon group together with a carbon atom. Represents the atomic groups required to form.
R 12 to R 16 each independently represent a linear or branched alkyl group or an alicyclic hydrocarbon group having 1 to 4 carbon atoms. However, at least one of R 12 to R 14 and any of R 15 and R 16 represent an alicyclic hydrocarbon group.
R 17 to R 21 each independently represent a hydrogen atom, a linear or branched alkyl group or an alicyclic hydrocarbon group having 1 to 4 carbon atoms, provided that at least one of R 17 to R 21 One represents an alicyclic hydrocarbon group. Further, either R 19 or R 21 represents a linear or branched alkyl group or an alicyclic hydrocarbon group having 1 to 4 carbon atoms.
R 22 to R 25 each independently represent a linear or branched alkyl group or an alicyclic hydrocarbon group having 1 to 4 carbon atoms, provided that at least one of R 22 to R 25 is an aliphatic group; Represents a cyclic hydrocarbon group. R 23 and R 24 may be bonded to each other to form a ring. )
2. A pattern forming method comprising: forming a resist film from the positive resist composition according to claim 1; and exposing and developing the resist film.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001236460A JP4149148B2 (en) | 2001-08-03 | 2001-08-03 | Positive resist composition |
TW91116877A TW574626B (en) | 2001-08-03 | 2002-07-29 | Positive resist composition |
KR1020020045513A KR100900468B1 (en) | 2001-08-03 | 2002-08-01 | POSITIVE RESIST COMPOSITION FOR ArF EXCIMER LASER EXPOSURE AND PATTERN FORMING METHOD USING THE COMPOSITION |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001236460A JP4149148B2 (en) | 2001-08-03 | 2001-08-03 | Positive resist composition |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2003043690A JP2003043690A (en) | 2003-02-13 |
JP2003043690A5 true JP2003043690A5 (en) | 2006-01-19 |
JP4149148B2 JP4149148B2 (en) | 2008-09-10 |
Family
ID=19067723
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001236460A Expired - Fee Related JP4149148B2 (en) | 2001-08-03 | 2001-08-03 | Positive resist composition |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP4149148B2 (en) |
KR (1) | KR100900468B1 (en) |
TW (1) | TW574626B (en) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3895224B2 (en) | 2001-12-03 | 2007-03-22 | 東京応化工業株式会社 | Positive resist composition and resist pattern forming method using the same |
EP1586594B1 (en) | 2002-11-05 | 2010-09-15 | JSR Corporation | Acrylic copolymer and radiation-sensitive resin composition |
JP4225817B2 (en) | 2003-03-31 | 2009-02-18 | 富士フイルム株式会社 | Positive resist composition |
JP2005031233A (en) | 2003-07-09 | 2005-02-03 | Tokyo Ohka Kogyo Co Ltd | Resist composition, layered product, and resist pattern forming method |
US7704669B2 (en) | 2003-08-05 | 2010-04-27 | Jsr Corporation | Acrylic polymer and radiation-sensitive resin composition |
JP2011046713A (en) * | 2004-04-23 | 2011-03-10 | Sumitomo Chemical Co Ltd | Chemically amplified positive resist composition, (meth)acrylate derivative and method for producing the same |
US7122291B2 (en) * | 2004-08-02 | 2006-10-17 | Az Electronic Materials Usa Corp. | Photoresist compositions |
JP4485913B2 (en) * | 2004-11-05 | 2010-06-23 | 東京応化工業株式会社 | Method for producing resist composition and resist composition |
JP4682069B2 (en) * | 2006-03-17 | 2011-05-11 | 富士フイルム株式会社 | Positive photosensitive composition and pattern forming method using the same |
JP4783657B2 (en) * | 2006-03-27 | 2011-09-28 | 富士フイルム株式会社 | Positive resist composition and pattern forming method using the composition |
JP6100986B2 (en) * | 2006-10-30 | 2017-03-22 | 三菱レイヨン株式会社 | Method for producing polymer, method for producing resist composition, and method for producing substrate on which pattern is formed |
JP5584980B2 (en) * | 2006-12-27 | 2014-09-10 | 三菱レイヨン株式会社 | RESIST MATERIAL, RESIST COMPOSITION, METHOD FOR PRODUCING SUBSTRATE WITH FORMED FINE PATTERN, AND METHOD FOR PRODUCING RESIST POLYMER |
JP5151586B2 (en) * | 2007-03-23 | 2013-02-27 | 住友化学株式会社 | Photoresist composition |
KR100933984B1 (en) * | 2007-11-26 | 2009-12-28 | 제일모직주식회사 | Novel copolymers and resist compositions comprising them |
JP5620627B2 (en) * | 2008-01-23 | 2014-11-05 | 三菱レイヨン株式会社 | RESIST POLYMER MANUFACTURING METHOD, RESIST COMPOSITION, AND SUBSTRATE MANUFACTURING METHOD |
JP5500795B2 (en) * | 2008-07-03 | 2014-05-21 | 三菱レイヨン株式会社 | RESIST MATERIAL, RESIST COMPOSITION, AND METHOD FOR MANUFACTURING SUBSTRATE WITH MICRO PATTERN |
JP6056753B2 (en) * | 2012-03-05 | 2017-01-11 | 三菱レイヨン株式会社 | Lithographic copolymer and method for producing the same, resist composition, and method for producing a substrate |
JP5737242B2 (en) * | 2012-08-10 | 2015-06-17 | 信越化学工業株式会社 | Monomer, polymer compound, resist composition and pattern forming method |
KR101748097B1 (en) * | 2013-09-03 | 2017-06-15 | 미쯔비시 케미컬 주식회사 | Copolymer for semiconductor lithography, resist composition, and substrate production method |
JP7198069B2 (en) * | 2017-12-22 | 2022-12-28 | 住友化学株式会社 | RESIN, RESIST COMPOSITION AND METHOD FOR MANUFACTURING RESIST PATTERN |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6048661A (en) * | 1997-03-05 | 2000-04-11 | Shin-Etsu Chemical Co., Ltd. | Polymeric compounds, chemically amplified positive type resist materials and process for pattern formation |
JP3237605B2 (en) * | 1998-04-06 | 2001-12-10 | 日本電気株式会社 | Alicyclic (meth) acrylate derivative having 1,2-diol structure and polymer thereof |
JP3042618B2 (en) * | 1998-07-03 | 2000-05-15 | 日本電気株式会社 | (Meth) acrylate derivative having lactone structure, polymer, photoresist composition, and pattern forming method |
JP3963602B2 (en) * | 1999-01-27 | 2007-08-22 | 富士フイルム株式会社 | Positive photoresist composition for deep ultraviolet exposure |
US6596458B1 (en) * | 1999-05-07 | 2003-07-22 | Fuji Photo Film Co., Ltd. | Positive-working photoresist composition |
JP4336925B2 (en) * | 1999-08-16 | 2009-09-30 | 信越化学工業株式会社 | Resist material and pattern forming method |
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2001
- 2001-08-03 JP JP2001236460A patent/JP4149148B2/en not_active Expired - Fee Related
-
2002
- 2002-07-29 TW TW91116877A patent/TW574626B/en not_active IP Right Cessation
- 2002-08-01 KR KR1020020045513A patent/KR100900468B1/en not_active IP Right Cessation