JP2003040649A - Chemical process for glass substrate and apparatus for the same - Google Patents
Chemical process for glass substrate and apparatus for the sameInfo
- Publication number
- JP2003040649A JP2003040649A JP2002110829A JP2002110829A JP2003040649A JP 2003040649 A JP2003040649 A JP 2003040649A JP 2002110829 A JP2002110829 A JP 2002110829A JP 2002110829 A JP2002110829 A JP 2002110829A JP 2003040649 A JP2003040649 A JP 2003040649A
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- Prior art keywords
- chemical processing
- glass substrate
- processing liquid
- storage tank
- chemical
- Prior art date
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- Liquid Crystal (AREA)
- Gas-Filled Discharge Tubes (AREA)
- Surface Treatment Of Glass (AREA)
- Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、各種ＦＰＤ（フラ
ットパネルディスプレイ）用ガラス基板、例えばＬＣＤ
（液晶ディスプレイ）用ガラス基板、ＰＤＰ（プラズマ
ディスプレイパネル）用ガラス基板、有機ＥＬ（エレク
トロルミネッセンス）用ガラス基板等の１枚或いは一対
の貼り合せ基板の外表面の片側の一部或いは全面、或い
は外表面の両側を加工することを特徴とするガラス基板
の化学加工方法及びその実施に用いる化学加工装置に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a glass substrate for various FPDs (flat panel displays) such as LCD.
A part or the whole of one side of the outer surface of one or a pair of bonded substrates such as a glass substrate for (liquid crystal display), a glass substrate for PDP (plasma display panel), a glass substrate for organic EL (electroluminescence), or the outside. The present invention relates to a chemical processing method for a glass substrate, characterized in that both sides of the surface are processed, and a chemical processing apparatus used for carrying out the method.
【０００２】[0002]
【従来の技術】従来のガラス基板の加工方法には物理的
な方法と化学的な方法がある。物理的な方法には、機械
を用いた加工やブラストによる加工があり、化学的な方
法にはウェットエッチングによる加工がある。最近で
は、以下に示すような品質改善が要求される趨勢にあ
る。
１）ガラス基板に元々存在する表面キズを無くす。
２）パターニングされた薄膜を剥離した基板に残ってい
るパターン跡を無くす。
３）ガラス基板の外表面の片側の全部を薄くし、その平
坦性を高める。
４）ガラス基板の外表面の両側の全部を薄くし、その平
坦性を高める。
５）ガラス基板の外表面の片側の一部に凹み部を作製
し、各部の寸法と各面の平坦性を高める。
６）ガラス基板の外表面の両側の一部に凹み部を作製
し、各部の寸法と各面の平坦性を高める。
７）３）〜６）のガラス基板を２枚の貼り合わせ基板と
読み替えて、同じ目的のことを行なう。2. Description of the Related Art Conventional methods for processing glass substrates include physical methods and chemical methods. Physical methods include processing using a machine and processing by blast, and chemical methods include processing by wet etching. Recently, there is a trend for quality improvement as described below. 1) Eliminate surface scratches originally present on the glass substrate. 2) Eliminate the pattern traces remaining on the substrate from which the patterned thin film has been peeled off. 3) The entire outer surface of the glass substrate is thinned on one side to improve its flatness. 4) The entire outer surface of the glass substrate is thinned on both sides to improve its flatness. 5) A recess is formed on a part of one side of the outer surface of the glass substrate to improve the dimensions of each part and the flatness of each surface. 6) Produce recesses on both sides of the outer surface of the glass substrate to improve the dimensions of each portion and the flatness of each surface. 7) The glass substrate of 3) to 6) is read as two bonded substrates, and the same purpose is performed.
【０００３】前記品質改善項目のうち、例えば１）〜
４）に対して、従来の機械を用いた加工、例えば機械研
磨では、平坦性の不足、割れや表面キズの発生、研磨模
様の残留、研磨能力の限界等、避けられない課題が残
る。一方、従来のウェットエッチングによる加工では、
ガラス基板に初めから存在する表面キズ及びパターン跡
を無くすのは困難であり、板厚を薄くする場合でも下記
の例に示すように種々の問題が発生し、素ガラスと同等
以上の品質を確保するのは困難であった。以降、代表例
として液晶ガラス基板を対象として記述を進めていく。Among the quality improvement items, for example, 1) to
On the other hand, in the processing using a conventional machine, for example, mechanical polishing, unavoidable problems such as lack of flatness, generation of cracks and surface scratches, residual polishing pattern, and limit of polishing ability remain. On the other hand, in conventional wet etching,
It is difficult to eliminate surface scratches and traces of patterns that exist on the glass substrate from the beginning, and various problems occur as shown in the example below even when the plate thickness is reduced, ensuring quality equal to or better than that of raw glass. It was difficult to do. Hereinafter, the description will proceed with a liquid crystal glass substrate as a typical example.
【０００４】例えば、特許第2722798号公報には、液晶
表示素子複数個分の面積を有する一対のガラス基板を各
素子区画の液晶封入領域をそれぞれ囲むシール材を介し
て接着して素子集合体を組み立て、この素子集合体をフ
ッ酸をベースとするエッチング液に浸漬して液晶ガラス
基板の外面をエッチングする方法が開示されているが、
板厚を薄くすることはできても後述する欠陥が生じると
いう問題がある。For example, Japanese Patent No. 2722798 discloses an element assembly in which a pair of glass substrates having an area for a plurality of liquid crystal display elements are adhered to each other through a sealing material surrounding each liquid crystal enclosing area of each element section to form an element assembly. Assembling, a method of etching the outer surface of the liquid crystal glass substrate by dipping this element assembly in an etching solution based on hydrofluoric acid is disclosed,
Although it is possible to reduce the plate thickness, there is a problem that defects described later occur.
【０００５】また、特開2000-147474号公報には、フッ
酸を含むエッチング溶液を貯溜するエッチング溶液槽の
底部に気泡発生装置を備え、この気泡発生装置から発生
した気泡によって前記エッチング溶液を攪拌して、エッ
チング溶液槽に入れたガラスの表面をエッチングする自
動エッチング装置の発明が開示されているが、１５〜１
７％のフッ酸を用いて液晶ガラス基板の外面を加工した
場合、後述する欠陥が生じるという問題がある。Further, in Japanese Patent Laid-Open No. 2000-147474, a bubble generator is provided at the bottom of an etching solution tank for storing an etching solution containing hydrofluoric acid, and the etching solution is agitated by the bubbles generated from the bubble generator. Then, the invention of an automatic etching apparatus for etching the surface of glass placed in an etching solution tank is disclosed.
When the outer surface of the liquid crystal glass substrate is processed using 7% hydrofluoric acid, there is a problem that defects described later occur.
【０００６】この発明においては、窒素ガス上昇気泡に
より加工液を攪拌させることによりガラス表面の均一な
加工を実現しようとしているが、上昇した気泡と加工液
とが液表面に達した後に下降する流れが上昇流の均一性
を阻害するので、表面が均一に加工されないという問題
がある。In the present invention, it is intended to realize uniform processing of the glass surface by stirring the working liquid by the rising bubbles of nitrogen gas, but the rising bubbles and the working liquid flow down after reaching the liquid surface. Hinders the uniformity of the ascending flow, resulting in a problem that the surface is not uniformly processed.
【０００７】上述の２つの例に示した従来のウェットエ
ッチングにより、５０〜３００μｍ加工した場合の問題
点を以下に示す。
１）蛍光灯下でも確認できる白濁が発生する。
２）最大０．２ｍｍ径のピットが発生する。図１２は加
工後の表面粗度計により測定した結果を示したグラフで
ある。
３）ピットの直径は加工量の増大とともに大きくなる。
図１３はピットの直径と加工量との関係を示したグラフ
である。
４）最大５０個／ｃｍ2のピットが発生する。図１４は
単位面積当りのピット数と加工量との関係を示したグラ
フである。図１４より単位面積当りのピット数は加工量
の増大とともに増加することが判る。
５）蛍光灯下で見えるウネリが発生する。図１５は加工
後の表面のウネリの状態を示したグラフである。
６）板厚の最大値と最小値との差が２０〜１００μｍで
あり、不均一である。
７）加工前に人為的に付けた表面キズが加工により、幅
も深さも大きくなる（図１６及び１７参照）。図１６は
加工前に意図的にキズを付けた表面の断面を示すグラフ
であり、図１７は加工後の表面の断面を示すグラフであ
る。The problems in the case of processing 50 to 300 μm by the conventional wet etching shown in the above two examples will be shown below. 1) White turbidity that can be seen even under a fluorescent lamp occurs. 2) Pits with a maximum diameter of 0.2 mm are generated. FIG. 12 is a graph showing the results measured by the surface roughness meter after processing. 3) The diameter of the pit increases as the amount of processing increases.
FIG. 13 is a graph showing the relationship between the pit diameter and the processing amount. 4) Up to 50 pits / cm 2 are generated. FIG. 14 is a graph showing the relationship between the number of pits per unit area and the processing amount. It can be seen from FIG. 14 that the number of pits per unit area increases as the processing amount increases. 5) A swell that can be seen under a fluorescent lamp is generated. FIG. 15 is a graph showing the state of swelling on the surface after processing. 6) The difference between the maximum value and the minimum value of the plate thickness is 20 to 100 μm, which is nonuniform. 7) Due to the processing, surface scratches artificially added before processing are increased in width and depth (see FIGS. 16 and 17). FIG. 16 is a graph showing a cross section of the surface that is intentionally scratched before processing, and FIG. 17 is a graph showing a cross section of the surface after processing.
【０００８】また、例えば液晶ガラス基板にＣｒをスパ
ッタリング後、カラーフィルター用画素をパターニング
した場合、その基板が不良になったときには、通常、パ
ターニングされたＣｒを剥離して機械研磨を行ない、パ
ターン跡を消すことにより素ガラスとして再利用してい
るが、機械研磨に代えて従来のウェットエッチングを実
施した場合はパターン跡が消えず、素ガラスとして再利
用できないという問題があった。In addition, for example, when a color filter pixel is patterned after sputtering a liquid crystal glass substrate with Cr and the substrate becomes defective, the patterned Cr is usually peeled off and mechanical polishing is performed to leave a pattern mark. However, when conventional wet etching is performed instead of mechanical polishing, the pattern marks do not disappear, and there is a problem that the glass cannot be reused.
【０００９】[0009]
【発明が解決しようとする課題】本発明はかかる事情に
鑑みてなされたものであり、フッ酸を主成分とした化学
加工液に、ガラス基板を浸漬し、ガラス基板の外表面の
片側の一部或いは全面、或いは外表面の両側を所定の形
状に加工することにより、各種フッ化物の反応生成物を
ガラス基板の表面に再付着させることなく、平坦性の高
いガラス基板表面を得ることができる各種ＦＰＤ用ガラ
ス基板の化学加工方法を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of such circumstances, and a glass substrate is immersed in a chemical processing liquid containing hydrofluoric acid as a main component to form one side of the outer surface of the glass substrate. By processing a part or the whole surface or both sides of the outer surface into a predetermined shape, a highly flat glass substrate surface can be obtained without redeposition of reaction products of various fluorides on the surface of the glass substrate. It is an object of the present invention to provide a method for chemically processing glass substrates for various FPDs.
【００１０】また、本発明は、化学加工液を貯溜する化
学加工液貯溜槽を備えた化学加工装置において、気泡発
生装置と、前記化学加工液貯溜槽から溢出させた化学加
工液を受ける溢出液受け槽と、前記溢出液受け槽に受け
た化学加工液を再度、化学加工液貯溜槽に送るポンプと
を備えた化学加工装置を提供することを目的とする。Further, according to the present invention, in a chemical processing apparatus having a chemical processing liquid storage tank for storing the chemical processing liquid, a bubble generating device and an overflow liquid for receiving the chemical processing liquid overflowed from the chemical processing liquid storage tank. An object of the present invention is to provide a chemical processing apparatus provided with a receiving tank and a pump for sending the chemical processing liquid received in the overflow liquid receiving tank to the chemical processing liquid storage tank again.
【００１１】そして、本発明は、ガラス基板若しくは一
対のガラス基板を貼り合わせたものの１又は複数を配す
るためのガラス基板収納治具を備えることにより、ガラ
ス基板若しくは一対のガラス基板を貼り合わせたものを
同時に複数枚、均一に加工することができる化学加工装
置を提供することを目的とする。Further, according to the present invention, a glass substrate or a pair of glass substrates are attached to each other by providing a glass substrate storage jig for arranging one or a plurality of glass substrates or a pair of glass substrates attached to each other. An object of the present invention is to provide a chemical processing device capable of uniformly processing a plurality of objects at the same time.
【００１２】さらに、本発明は、超音波振動子又は揺動
攪拌翼を備えることにより、より均一に化学加工液を攪
拌することができる化学加工装置を提供することを目的
とする。A further object of the present invention is to provide a chemical processing apparatus which is equipped with an ultrasonic vibrator or a rocking stirring blade and which can stir the chemical processing liquid more uniformly.
【００１３】[0013]
【課題を解決するための手段】第１発明のガラス基板の
化学加工方法は、フッ酸を主成分とした化学加工液を貯
溜する化学加工液貯溜槽の底部から気泡を伴なう化学加
工液の上昇液流を発生させ、この加工液中にガラス基板
を浸漬してガラス基板の外表面の片側の一部或いは全
部、或いは外表面の両側の一部或いは全部を加工するこ
とを特徴とする。According to a first aspect of the present invention, there is provided a chemical processing method for a glass substrate, wherein a chemical processing solution containing hydrofluoric acid as a main component stores a chemical processing solution from a bottom of a chemical processing solution storage tank with bubbles. And a glass substrate is immersed in the working liquid to process part or all of one side of the outer surface of the glass substrate, or part or all of both sides of the outer surface. .
【００１４】第２発明のガラス基板の化学加工方法は、
第１発明において、前記上昇液流を前記化学加工液貯溜
槽の周縁部から溢出させることを特徴とする。第３発明
のガラス基板の化学加工方法は、第２発明において、前
記化学加工液貯溜槽の周縁部から溢出させた化学加工液
を再度、前記化学加工液貯溜槽に供給することを特徴と
する。第４発明のガラス基板の化学加工方法は、第３発
明において、前記化学加工液貯溜槽の周縁部から溢出さ
せた化学加工液をフィルターに通し、化学加工により生
じた反応生成物を除去した後、前記化学加工液貯溜槽に
供給することを特徴とする。The chemical processing method of the glass substrate of the second invention is
In the first invention, the rising liquid flow is caused to overflow from a peripheral portion of the chemical processing liquid storage tank. The chemical processing method for a glass substrate according to a third invention is characterized in that, in the second invention, the chemical processing liquid overflowing from the peripheral portion of the chemical processing liquid storage tank is supplied to the chemical processing liquid storage tank again. . The method for chemically processing a glass substrate according to a fourth aspect of the present invention is the method for chemically processing a glass substrate according to the third aspect, after the chemical processing liquid overflowing from the peripheral portion of the chemical processing liquid storage tank is passed through a filter to remove reaction products generated by the chemical processing. The chemical processing liquid is supplied to the storage tank.
【００１５】第１乃至第４発明においては、化学加工液
を均一に上昇させるので、ガラス基板の表面に常に新鮮
な加工液が供給されるとともに、反応生成物がガラス基
板の表面に物理的に再付着するのが防止される。加工速
度は拡散速度及び反応速度から決まるが、ガラス基板の
表面の凸部においては微細気泡の上昇流によって、常に
活性な化学加工液が供給されるので、反応律速となり、
加工速度は十分に速くなる。これに対して、ガラス基板
の表面の凹部は、加工液がよどんだ状態にあるので、拡
散律速となり、加工速度が遅くなる。したがって、微細
気泡の上昇流によって加工速度を制御することができ、
ガラス基板の厚みを薄くしつつ、表面を平坦化させるこ
とができる。また、ガラス基板の表面に初めから存在し
ていたキズを無くすことができ、ガラスの再利用が可能
となる。In the first to fourth inventions, since the chemical working liquid is raised uniformly, a fresh working liquid is always supplied to the surface of the glass substrate, and the reaction product physically reaches the surface of the glass substrate. Reattachment is prevented. The processing rate is determined by the diffusion rate and the reaction rate, but in the convex portion of the surface of the glass substrate, the upward flow of fine bubbles always supplies the active chemical processing liquid, so that the reaction rate is determined.
The processing speed is sufficiently high. On the other hand, the concave portion on the surface of the glass substrate is in a state where the working liquid is stagnant, so that it becomes diffusion-controlled and the processing speed becomes slow. Therefore, the processing speed can be controlled by the upward flow of fine bubbles,
It is possible to flatten the surface while reducing the thickness of the glass substrate. Further, it is possible to eliminate scratches existing on the surface of the glass substrate from the beginning, and the glass can be reused.
【００１６】第２発明においては、化学加工液の上昇液
流が化学加工液貯溜槽の表面に達した後に下降して、以
後に化学加工液が均一に上昇するのを阻害することがな
いので、ガラス基板の表面をより均一に研磨することが
できる。第３発明においては、化学加工液をスムーズに
循環させることができる。第４発明においては、化学加
工液中の反応生成物がガラス基板の表面に付着するのを
防止することができる。According to the second aspect of the present invention, the rising flow of the chemical processing liquid is lowered after reaching the surface of the chemical processing liquid storage tank, and does not prevent the chemical processing liquid from uniformly increasing thereafter. The surface of the glass substrate can be polished more uniformly. In the third invention, the chemical processing liquid can be smoothly circulated. In the fourth invention, it is possible to prevent the reaction product in the chemical processing liquid from adhering to the surface of the glass substrate.
【００１７】第５発明の化学加工装置は、化学加工液を
貯溜する化学加工液貯溜槽を備えた化学加工装置におい
て、気泡発生装置と、前記化学加工液貯溜槽から溢出さ
せた化学加工液を受ける溢出液受け槽と、前記溢出液受
け槽に受けた化学加工液を再度、化学加工液貯溜槽に送
るポンプとを備えている。気泡発生装置は、好適には、
ガスの導入を受け、多孔質から成る気泡吐出部から吐出
するものである。なお、ポンプによる循環流路には、研
磨により生じた反応生成物を除去するためのフィルタ
ー、及び／又は、前記気泡発生装置の下側に配され、前
記ポンプにより送り出された化学加工液を前記化学加工
液貯溜槽に吐出するための多数の孔を有した化学加工液
吐出装置を設けるのが好ましい。The chemical processing apparatus of the fifth invention is a chemical processing apparatus having a chemical processing liquid storage tank for storing the chemical processing liquid, wherein the bubble generating device and the chemical processing liquid overflowed from the chemical processing liquid storage tank are provided. An overflow liquid receiving tank for receiving and a pump for sending the chemical processing liquid received in the overflow liquid receiving tank to the chemical processing liquid storage tank again are provided. The bubble generator is preferably
Upon receiving the introduction of gas, the gas is discharged from a porous bubble discharging unit. In the circulation flow path by the pump, a filter for removing a reaction product generated by polishing and / or a lower side of the bubble generating device is provided, and the chemical processing liquid sent by the pump is added to the circulation path. It is preferable to provide a chemical processing liquid discharge device having a large number of holes for discharging the chemical processing liquid storage tank.
【００１８】第５発明においては、化学加工液を均一に
上昇させて、溢出させて再度化学加工液貯溜槽に供給す
ることができ、更に、フィルターを設ければ、反応生成
物を除去した後の加工液を循環させることができる。し
たがって、均質な化学加工液を得ることができる上、フ
ィルターを用いるだけで、ガラス基板の表面に常に新鮮
な加工液が供給される。また、反応生成物がガラス基板
の表面に物理的に再付着するのを防止することもでき
る。ガラス基板の表面の凸部においては微細気泡の上昇
流によって、常に活性な化学加工液が供給されるので、
反応律速となり、加工速度は十分に速くなり、ガラス基
板の表面の凹部は、加工液がよどんだ状態にあるので、
拡散律速となり、加工速度が遅くなるので、結果とし
て、ガラス基板の厚みを薄くしつつ、表面を平坦化させ
ることができる。In the fifth invention, the chemical processing liquid can be uniformly raised, overflowed and supplied again to the chemical processing liquid storage tank. Further, if a filter is provided, after the reaction product is removed. The working fluid can be circulated. Therefore, it is possible to obtain a uniform chemical working liquid, and a fresh working liquid is always supplied to the surface of the glass substrate only by using a filter. It is also possible to prevent the reaction product from physically redepositing on the surface of the glass substrate. In the convex portion of the surface of the glass substrate, the upward flow of fine bubbles always supplies the active chemical processing liquid,
The reaction becomes rate-determining, the processing speed becomes sufficiently fast, and the recesses on the surface of the glass substrate are in a state where the processing liquid is stagnant.
Since the diffusion rate is controlled and the processing speed becomes slow, as a result, the surface of the glass substrate can be flattened while reducing the thickness thereof.
【００１９】第６発明の化学加工装置は、第５発明にお
いて、ガラス基板若しくは一対のガラス基板を貼り合わ
せたものの１又は複数を配するためのガラス基板収納治
具を備えることを特徴とする。第６発明においては、ガ
ラス基板又は一対のガラス基板を貼り合わせたものを同
時に複数枚、均一に加工することができる。A chemical processing apparatus according to a sixth aspect of the present invention is characterized in that, in the fifth aspect of the present invention, a glass substrate storage jig is provided for arranging one or a plurality of glass substrates or a pair of glass substrates bonded together. In the sixth invention, a plurality of glass substrates or a pair of glass substrates bonded together can be processed uniformly at the same time.
【００２０】第７発明の化学加工装置は、第５又は第６
発明において、超音波振動子又は揺動攪拌翼を備えるこ
とを特徴とする。第７発明においては、より均一に化学
加工液を攪拌することができる。The chemical processing apparatus of the seventh invention is the fifth or sixth invention.
The invention is characterized by including an ultrasonic transducer or an oscillating stirring blade. In the seventh invention, the chemical processing liquid can be stirred more uniformly.
【００２１】[0021]
【発明の実施の形態】以下に、本発明をその実施の形態
を示す図面に基づいて具体的に説明する。図１は、本発
明の化学加工装置の一例を示す断面図である。化学加工
装置１は化学加工液貯溜槽１１を備えており、化学加工
液貯溜槽１１の底部には、ガスを導入して、多孔質から
なる気泡吐出部１２ａから吐出すべく構成された気泡発
生装置１２が配置されており、気泡発生装置１２の上側
には、ガラス基板又は一対のガラス基板を貼り合わせた
ものを縦方向に挿入して保持するためのガラス基板収納
治具１８が配置されている。このガラス基板収納治具１
８は、ガラス基板収納治具用保持具１７の中に配置され
ている。化学加工液貯溜槽１１には、フッ酸を主成分と
した化学加工液が投入される。BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be specifically described below with reference to the drawings showing the embodiments thereof. FIG. 1 is a sectional view showing an example of the chemical processing apparatus of the present invention. The chemical processing apparatus 1 is provided with a chemical processing liquid storage tank 11, and gas is introduced into the bottom of the chemical processing liquid storage tank 11 to generate bubbles from a porous bubble discharging unit 12a. The device 12 is arranged, and on the upper side of the bubble generating device 12, a glass substrate storage jig 18 for vertically inserting and holding a glass substrate or a laminated glass substrate is arranged. There is. This glass substrate storage jig 1
8 is arranged in the glass substrate storage jig holder 17. A chemical processing liquid containing hydrofluoric acid as a main component is charged into the chemical processing liquid storage tank 11.
【００２２】化学加工液貯溜槽１１の周縁部には、化学
加工液貯溜槽１１から溢出させた前記化学加工液を受け
る溢出液受け槽１３が設けられており、溢出液受け槽１
３には、加工により生じた反応生成物を除去するための
フィルター１４、及びこのフィルター１４により濾過さ
れた化学加工液を再度化学加工液貯溜槽１１に送るため
のポンプ１５が連結されている。そして、気泡発生装置
１２の下側に配され、ポンプ１５により送り出された化
学加工液を化学加工液貯溜槽の底部に向けて吐出するた
めの多数の孔を有する化学加工液吐出部１６ａを備えた
化学加工液吐出装置１６により、再度、化学加工液が化
学加工液貯溜槽１１に供給される。At the periphery of the chemical processing liquid storage tank 11, an overflow liquid receiving tank 13 for receiving the chemical processing liquid overflowing from the chemical processing liquid storage tank 11 is provided.
A filter 14 for removing a reaction product generated by processing, and a pump 15 for sending the chemical processing liquid filtered by the filter 14 to the chemical processing liquid storage tank 11 again are connected to 3. Then, the chemical machining liquid discharger 16a is provided below the bubble generator 12 and has a number of holes for discharging the chemical machining liquid sent out by the pump 15 toward the bottom of the chemical machining liquid storage tank. The chemical processing liquid discharge device 16 supplies the chemical processing liquid to the chemical processing liquid storage tank 11 again.
【００２３】また、化学加工装置１には、超音波振動子
又は揺動攪拌翼を備えてもよい（図示せず）。この場合
には、化学加工液をより均一に攪拌することができる。Further, the chemical processing apparatus 1 may be provided with an ultrasonic oscillator or a rocking stirring blade (not shown). In this case, the chemical processing liquid can be stirred more uniformly.
【００２４】図２は、気泡発生装置１２の一例を示す斜
視図である。気泡発生装置１２は、窒素ガス等のガスを
導入するガス導入管１２ｂと、ガス導入管１２ｂに垂直
に複数連結された、多孔質からなるパイプ状の気泡吐出
部１２ａ，１２ａ，・・・とを備えている。また、図３
は他の気泡発生装置１２の気泡吐出部１２ａの一例を示
す斜視図である。この気泡吐出部１２ａは多孔質からな
り、板状を有している。図２及び図３ともに、気泡吐出
部１２ａの孔径は１０〜５００μｍにするのが好まし
い。そして、これらの気泡発生装置１２を液晶ガラス基
板収納治具用保持具１７の下側に配置して、微細気泡を
上方に吐出させ、化学加工液を均一に上昇させる。この
上昇液流により、ガラス基板の表面に常に新鮮な化学加
工液を供給することができるとともに、フッ化物等の反
応生成物がガラス基板の表面に再付着するのを防止する
ことができる。FIG. 2 is a perspective view showing an example of the bubble generating device 12. The bubble generating device 12 includes a gas introducing pipe 12b for introducing a gas such as nitrogen gas, and a plurality of porous pipe-like bubble discharging units 12a, 12a, ... Which are vertically connected to the gas introducing pipe 12b. Is equipped with. Also, FIG.
FIG. 7 is a perspective view showing an example of a bubble discharger 12 a of another bubble generator 12. The bubble discharging portion 12a is made of porous material and has a plate shape. 2 and 3, it is preferable that the bubble discharge portion 12a has a hole diameter of 10 to 500 μm. Then, these bubble generators 12 are arranged below the holder 17 for the liquid crystal glass substrate storage jig, and the fine bubbles are discharged upward to uniformly raise the chemical processing liquid. By this rising liquid flow, it is possible to always supply a fresh chemical processing liquid to the surface of the glass substrate, and it is possible to prevent a reaction product such as a fluoride from reattaching to the surface of the glass substrate.
【００２５】微細気泡の上昇流が化学加工液の表面に達
した後は、化学加工液貯溜槽１１の周縁部から溢出し、
溢出液受け槽１３で受けられ、フィルター１４を通した
後、再度、化学加工液貯溜槽１１に供給される。化学加
工液を溢出させない場合、上昇液流が下降液流に転じる
部分の断面積が小さいと、下降液流が上昇液流と交錯し
て均一な上昇液流が確保できなくなる。図４は、化学加
工液貯溜槽１１及びガラス基板収納治具用保持具１７の
一例を示す平面図である。図４に示したように、ガラス
基板収納治具用保持具１７の外側部分に相当する下降液
流の通過断面積が、ガラス基板収納治具用保持具１７の
内側部分に相当する上昇液流の通過断面積の１〜３倍で
ある場合、均一な上昇液流が確保できることが確保され
ている。After the upward flow of the fine bubbles reaches the surface of the chemical processing liquid, it overflows from the peripheral portion of the chemical processing liquid storage tank 11,
It is received in the overflow liquid receiving tank 13, passed through the filter 14, and then supplied again to the chemical processing liquid storage tank 11. When the chemical processing liquid is not allowed to overflow, if the cross-sectional area of the portion where the rising liquid flow turns into the descending liquid flow is small, the descending liquid flow intersects with the ascending liquid flow, and it becomes impossible to secure a uniform ascending liquid flow. FIG. 4 is a plan view showing an example of the chemical processing liquid storage tank 11 and the glass substrate storage jig holder 17. As shown in FIG. 4, the passage cross-sectional area of the descending liquid flow corresponding to the outer portion of the glass substrate storage jig holder 17 is the rising liquid flow corresponding to the inner portion of the glass substrate storage jig holder 17. It is assured that a uniform rising liquid flow can be secured when the cross-sectional area is 1 to 3 times.
【００２６】ガラス基板の成分と化学加工液とのフッ化
物等の反応生成物は、微細気泡の上昇流によって上昇す
るが、これが化学加工液貯溜槽１１内を循環して化学加
工液貯溜槽１１の底部に堆積すると、微細気泡の吐出に
悪影響を及ぼすので、反応生成物の堆積を防止する必要
がある。図５は、化学加工液吐出装置１６の一例を示す
斜視図である。この化学加工液吐出装置１６には、多数
の孔を有した化学加工液吐出部１６ａが複数、平行に設
けられており、ポンプ１５によって送り出された化学加
工液を化学加工液吐出部１６ａから下向き又は斜め下向
きに吐出させることにより、化学加工液の供給ととも
に、反応生成物の堆積を防止するように設計することが
好ましい。A reaction product such as a fluoride of the components of the glass substrate and the chemical processing liquid rises due to an upward flow of fine bubbles, which circulates in the chemical processing liquid storage tank 11 and is circulated. If it is deposited on the bottom of the, the discharge of fine bubbles will be adversely affected, so it is necessary to prevent the deposition of reaction products. FIG. 5 is a perspective view showing an example of the chemical processing liquid discharge device 16. The chemical processing liquid discharger 16 is provided with a plurality of chemical processing liquid discharge portions 16a having a large number of holes in parallel, and the chemical processing liquid discharged by the pump 15 is directed downward from the chemical processing liquid discharge portion 16a. Alternatively, it is preferable to design so as to prevent the deposition of the reaction product as well as the supply of the chemical processing liquid by discharging it obliquely downward.
【００２７】[0027]
【実施例】以下に、本発明を実施例に基づき具体的に説
明する。
［実施例１］本発明の化学加工装置１を用いて、素ガラ
スの化学加工を行なった例を以下に示す。
（１）素ガラスのサイズとそれぞれの目標の化学加工量
No.1；縦320mm×横400mm×厚み1.1mm。目標の化学加工
量；0.3mm。
No.2；縦400mm×横500mm×厚み0.7mm。目標の化学加工
量；0.2mm。
（２）化学加工液の組成
水を溶媒として、フッ酸５％、塩酸１０％、硝酸５％を
含有する化学加工液を使用した。
（３）素ガラスの受入検査と最終検査の方法
板厚測定
超音波式板厚計を用いて図６に示した測定位置の板厚を
測定した。
外観検査
検査機器として蛍光灯（1500Lx以上）、集光灯（１万Lx
以上）を使用し、検査機器の光源からガラス基板までの
距離とガラス基板から測定者までの距離を共に３００ｍ
ｍにして、ガラス基板に対する反射光と透過光を目視で
確認した。
（４）実験結果
加工速度
素ガラスの片面に対して２．５μｍ／分であった。
板厚
表１に超音波板厚計によって測定した素ガラスの板厚を
示した。EXAMPLES The present invention will be specifically described below based on examples. [Example 1] An example of chemically processing a raw glass using the chemical processing apparatus 1 of the present invention will be described below. (1) Size of raw glass and the respective target chemical processing amount No. 1; length 320 mm × width 400 mm × thickness 1.1 mm. Target amount of chemical processing: 0.3 mm. No.2; length 400 mm x width 500 mm x thickness 0.7 mm. Target amount of chemical processing: 0.2 mm. (2) Composition of chemical processing liquid Using water as a solvent, a chemical processing liquid containing 5% hydrofluoric acid, 10% hydrochloric acid, and 5% nitric acid was used. (3) Method of acceptance inspection of final glass and final inspection Plate thickness measurement The plate thickness at the measurement position shown in FIG. 6 was measured using an ultrasonic plate thickness meter. Appearance inspection Fluorescent lamp (1500Lx or more), condensing lamp (10,000Lx)
The distance from the light source of the inspection device to the glass substrate and the distance from the glass substrate to the measurer are both 300 m.
The reflected light and the transmitted light with respect to the glass substrate were visually confirmed at m. (4) Experimental result The processing speed was 2.5 μm / min for one side of the elementary glass. Plate thickness Table 1 shows the plate thickness of the raw glass measured by an ultrasonic plate thickness meter.
【００２８】[0028]
【表１】 [Table 1]
【００２９】キズの有無
図７に化学加工前後における素ガラスのキズの有無を検
査した結果を示した。図７より、化学加工前に存在した
キズが化学加工により消失したことが判る。
表面の平坦性
No.2の素ガラスを化学加工した後の表面状態を測定した
結果を図８に示した。表１及び図８より、素ガラスの各
位置において、均一に目標量を加工することができ、素
ガラスの表面が平坦化されたことが判る。Existence of Scratches FIG. 7 shows the results of inspecting the presence or absence of scratches in the raw glass before and after chemical processing. From FIG. 7, it can be seen that the scratches existing before the chemical processing disappeared due to the chemical processing. FIG. 8 shows the result of measuring the surface condition after chemically processing the elementary glass having the surface flatness No. 2. From Table 1 and FIG. 8, it can be seen that the target amount can be uniformly processed at each position of the raw glass, and the surface of the raw glass is flattened.
【００３０】［実施例２］化学研磨装置１を用いて、２
枚の貼り合わせ液晶ガラス基板の化学加工を行なった例
を示す。
（１）貼り合わせ液晶ガラス基板のサイズとそれぞれの
目標の化学加工量
No.3；400mm×500mm×1.4mm。目標の化学加工量；両面
合わせて0.4mm。
（２）化学加工液の組成
実施例１と同じ。
（３）受入検査と最終検査の方法
板厚測定；２枚の貼り合わせ液晶ガラス基板の表側の測
定位置を図１０に、裏側の測定位置を図１１に示した。
外観検査；実施例１と同様に行なった。
（４）実験結果
加工速度
貼り合わせ液晶ガラス基板の片面に対して２．５μｍ／
分であった。
板厚
表２に超音波板厚計によって測定した結果を示した。Example 2 Using the chemical polishing apparatus 1, 2
An example of chemically processing a bonded liquid crystal glass substrate is shown. (1) Size of bonded liquid crystal glass substrate and each target chemical processing amount No.3: 400 mm × 500 mm × 1.4 mm. Target amount of chemical processing: 0.4 mm on both sides. (2) Composition of chemical processing liquid Same as in Example 1. (3) Method of acceptance inspection and final inspection Plate thickness measurement: The measurement position on the front side of the two bonded liquid crystal glass substrates is shown in FIG. 10, and the measurement position on the back side is shown in FIG. Visual inspection: The same as in Example 1. (4) Experimental result 2.5 μm / working speed on one side of the laminated liquid crystal glass substrate
It was a minute. Plate thickness Table 2 shows the results measured by an ultrasonic plate thickness meter.
【００３１】[0031]
【表２】 [Table 2]
【００３２】キズの有無
化学加工前後におけるキズの有無を検査した結果を図９
に示した。図９より、化学加工前に存在したキズが化学
加工により消失したことが判る。
表面の平坦性
表２から、貼り合わせガラス基板の各位置において、均
一に目標量を加工することができ、表面が平坦化されて
いることが判る。Existence of Scratches The results of inspecting the presence or absence of flaws before and after the chemical processing are shown in FIG.
It was shown to. From FIG. 9, it can be seen that the scratches existing before the chemical processing disappeared due to the chemical processing. Surface flatness From Table 2, it can be seen that the target amount can be uniformly processed at each position of the laminated glass substrate, and the surface is flattened.
【００３３】［実施例３］カラーフィルター用画素がＣ
ｒでパターニングされた液晶ガラス基板が不良になった
ので、Ｃｒを剥離した後、パターン跡を無くすため化学
加工装置１により化学加工を行なった。
（１）Ｃｒ剥離後のガラス基板のサイズとそれぞれの目
標の化学加工量
No.4；縦400mm×横500mm×厚み0.7mm。目標の化学加工
量；５μｍ。
（２）化学加工液の組成
実施例１と同様のものを用いた。
（３）受入検査と最終検査の方法
板厚測定；超音波式板厚計を用いて図６に示した測定位
置の板厚を測定した。
外観検査；実施例１と同様に行なった。
（４）実験結果
加工速度
ガラス基板の片面に対して２．５μｍ／分であった。
板厚
表３に超音波板厚計によって測定した結果を示した。[Embodiment 3] The pixel for the color filter is C
Since the liquid crystal glass substrate patterned by r became defective, after removing Cr, chemical processing was performed by the chemical processing apparatus 1 in order to eliminate pattern marks. (1) Size of glass substrate after Cr peeling and respective target chemical processing amount No. 4; length 400 mm × width 500 mm × thickness 0.7 mm. Target chemical processing amount: 5 μm. (2) Composition of chemical processing liquid The same as in Example 1 was used. (3) Method of acceptance inspection and final inspection Plate thickness measurement: The plate thickness at the measurement position shown in FIG. 6 was measured using an ultrasonic plate thickness meter. Visual inspection: The same as in Example 1. (4) Experimental result The processing speed was 2.5 μm / min for one side of the glass substrate. Plate thickness Table 3 shows the results measured by an ultrasonic plate thickness meter.
【００３４】[0034]
【表３】 [Table 3]
【００３５】パターン跡の有無
パターン跡は化学加工により全て消失していることが確
認された。
表面の平坦性
表３とパターン跡の消失結果から、液晶ガラス基板を均
一に目標量加工することができ、表面が平坦化されたこ
とが判る。Presence or absence of pattern traces It was confirmed that all pattern traces disappeared by chemical processing. Surface flatness From Table 3 and the disappearance result of the pattern traces, it can be seen that the target amount of the liquid crystal glass substrate could be uniformly processed and the surface was flattened.
【００３６】以上のように本発明の化学加工方法を実施
することにより、液晶ガラス基板の板厚を薄くしつつ、
表面を平坦化できることが確認された。また、液晶ガラ
ス基板の表面に初めから存在していたキズを消失させる
ことができるのいでガラスの再利用が可能となる。さら
に、本発明の化学加工方法においては、ガラス基板の大
きさに関係なく生産性高くガラス基板の加工を実施する
ことができる。なお、本発明の化学加工装置１は前記実
施の形態において説明したものに限定されるものではな
く、本発明の目的を損なわない限り種々の設計変更が可
能である。By carrying out the chemical processing method of the present invention as described above, the thickness of the liquid crystal glass substrate can be reduced,
It was confirmed that the surface could be flattened. In addition, since scratches originally present on the surface of the liquid crystal glass substrate can be eliminated, the glass can be reused. Furthermore, in the chemical processing method of the present invention, it is possible to process a glass substrate with high productivity regardless of the size of the glass substrate. The chemical processing apparatus 1 of the present invention is not limited to the one described in the above embodiment, and various design changes can be made without impairing the object of the present invention.
【００３７】[0037]
【発明の効果】以上詳述したように、第１発明による場
合は、フッ酸を主成分とした化学加工液を貯溜する化学
加工液貯溜槽の底部から微細気泡を伴なう上昇液流を発
生させ、その加工液中にガラス基板を浸漬し、前記ガラ
ス基板の外表面の片側の一部或いは全面、或いは外表面
の両側を加工すること、並びに各種フッ化物を前記ガラ
ス基板の表面に再付着しないようにすることによって、
ガラス基板の板厚を薄くするとともに、表面を平坦化さ
せることができる。As described above in detail, in the case of the first invention, an ascending liquid flow accompanied by fine bubbles is generated from the bottom of the chemical processing liquid storage tank for storing the chemical processing liquid containing hydrofluoric acid as a main component. Generated, and the glass substrate is dipped in the working liquid to process part or all of the outer surface of the glass substrate, or both sides of the outer surface, and various fluorides are re-applied to the surface of the glass substrate. By not sticking,
It is possible to reduce the thickness of the glass substrate and flatten the surface.
【００３８】第１乃至第４発明による場合は、化学加工
液を均一に上昇させるので、ガラス基板の表面に常に新
鮮な加工液が供給されるとともに、反応生成物がガラス
基板の表面に物理的に再付着するのが防止される。した
がって、気泡の上昇流により加工速度を制御することが
でき、ガラス基板の厚みを薄くしつつ表面をより平坦化
することができる。そして、本発明の化学加工方法によ
り、ガラス基板の大きさに関係なく、生産性高く均一に
加工を実施することができる。また、ガラス基板の表面
に初めから存在していたキズを無くすことができ、ガラ
スの再利用が可能となる。In the case of the first to fourth inventions, the chemical working liquid is raised uniformly, so that the fresh working liquid is always supplied to the surface of the glass substrate, and the reaction product physically reaches the surface of the glass substrate. Is prevented from reattaching to. Therefore, the processing speed can be controlled by the upward flow of bubbles, and the surface of the glass substrate can be flattened while reducing the thickness thereof. The chemical processing method of the present invention enables uniform processing with high productivity regardless of the size of the glass substrate. Further, it is possible to eliminate scratches existing on the surface of the glass substrate from the beginning, and the glass can be reused.
【００３９】第５発明による場合は、化学加工液を均一
に上昇させ、溢出させて、反応生成物を除去した後、再
度化学加工液貯溜槽に供給し、化学加工液を循環させる
ので、ガラス基板の表面に常に新鮮な化学加工液が供給
されるとともに、反応生成物がガラス基板の表面に物理
的に再付着するのが防止される。ガラス基板の表面の凸
部では、気泡の上昇流によって常に活性な化学加工液が
供給されるので、反応律速となって加工速度が十分に速
くなり、液晶ガラス基板の凹部では、加工液がよどんだ
状態にあるので、拡散律速となって加工速度が遅くなる
ので、結果として、ガラス基板の厚みを薄くしつつ、表
面を平坦化させることができる。In the case of the fifth invention, the chemical processing liquid is uniformly raised and overflowed to remove the reaction product, and then the chemical processing liquid is supplied again to the chemical processing liquid storage tank to circulate the chemical processing liquid. The surface of the substrate is constantly supplied with a fresh chemical processing liquid, and the reaction products are prevented from being physically redeposited on the surface of the glass substrate. In the convex part of the surface of the glass substrate, the active chemical processing liquid is always supplied by the upward flow of bubbles, so that the reaction speed becomes the reaction rate and the processing speed becomes sufficiently high. In this state, the diffusion rate is controlled and the processing speed becomes slower. As a result, the surface of the glass substrate can be flattened while reducing the thickness of the glass substrate.
【００４０】第６発明による場合は、ガラス基板又は一
対のガラス基板を貼り合わせたものを同時に複数枚、均
一に加工することができる。第７発明による場合は、超
音波振動子又は揺動攪拌翼を備えるので、より均一に化
学加工液を攪拌することができる。In the case of the sixth invention, a plurality of glass substrates or a pair of glass substrates bonded together can be processed uniformly at the same time. In the case of the seventh invention, since the ultrasonic vibrator or the oscillating stirring blade is provided, the chemical processing liquid can be stirred more uniformly.
【図１】本発明に係る化学加工装置の一例を示す断面図
である。FIG. 1 is a sectional view showing an example of a chemical processing apparatus according to the present invention.
【図２】気泡発生装置の第一実施例を示す斜視図であ
る。FIG. 2 is a perspective view showing a first embodiment of a bubble generating device.
【図３】気泡発生装置の第二実施例を示す斜視図であ
る。FIG. 3 is a perspective view showing a second embodiment of the bubble generating device.
【図４】化学加工液貯溜槽及びガラス基板収納治具用保
持具の一例を示す平面図である。FIG. 4 is a plan view showing an example of a chemical processing liquid storage tank and a holder for a glass substrate storage jig.
【図５】化学加工液吐出装置の一例を示す斜視図であ
る。FIG. 5 is a perspective view showing an example of a chemical processing liquid discharge device.
【図６】実施例１のガラス基板の板厚の測定位置を示す
平面図である。FIG. 6 is a plan view showing measurement positions of the plate thickness of the glass substrate of Example 1.
【図７】化学加工の前後で表面キズの有無を調べた結果
を示す平面図である。FIG. 7 is a plan view showing the results of examining the presence or absence of surface scratches before and after chemical processing.
【図８】表面粗度計により実施例１のガラス基板の表面
状態を調べた結果を示す平面図である。FIG. 8 is a plan view showing the results of examining the surface state of the glass substrate of Example 1 with a surface roughness meter.
【図９】化学加工の前後でキズの有無を調べた結果を示
す平面図である。FIG. 9 is a plan view showing the results of examining the presence or absence of scratches before and after chemical processing.
【図１０】実施例２のガラス基板を２枚貼り合わせたも
のの外側表面の板厚の測定位置を示した平面図である。FIG. 10 is a plan view showing the measurement positions of the plate thickness of the outer surface of two glass substrates of Example 2 which are bonded together.
【図１１】実施例２のガラス基板を２枚貼り合わせたも
のの外側裏面の板厚の測定位置を示した平面図である。FIG. 11 is a plan view showing the measurement positions of the plate thickness of the outer back surface of the two glass substrates of Example 2 which are bonded together.
【図１２】従来の化学加工方法により加工した後の表面
を測定した結果を示すグラフである。FIG. 12 is a graph showing the results of measuring the surface after processing by a conventional chemical processing method.
【図１３】ピットの直径と加工量との関係を示したグラ
フである。FIG. 13 is a graph showing the relationship between the pit diameter and the processing amount.
【図１４】単位面積当りのピット数と加工量との関係を
示したグラフである。FIG. 14 is a graph showing the relationship between the number of pits per unit area and the processing amount.
【図１５】加工後の表面のウネリの状態を示したグラフ
である。FIG. 15 is a graph showing the state of swelling on the surface after processing.
【図１６】加工前に意図的にキズを付けた表面の断面を
示すグラフである。FIG. 16 is a graph showing a cross section of a surface that is intentionally scratched before processing.
【図１７】加工後の表面の断面を示すグラフである。FIG. 17 is a graph showing a cross section of the surface after processing.
１ 化学加工装置 １１ 化学加工液貯溜槽 １２ 気泡発生装置 １２ａ 気泡吐出部 １３ 溢出液受け槽 １４ フィルター １５ ポンプ １６ 化学加工液吐出装置 １７ ガラス基板収納治具用保持具 １８ ガラス基板収納治具 1 Chemical processing equipment 11 Chemical processing liquid storage tank 12 Bubble generator 12a Bubble discharge part 13 Overflow liquid receiving tank 14 filters 15 pumps 16 Chemical processing liquid discharge device 17 Glass substrate storage jig holder 18 Glass substrate storage jig
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｊ 17/16 Ｈ０１Ｊ 17/16 (72)発明者 糸川 勝博 大阪府豊中市利倉１丁目１番１号 西山ス テンレスケミカル株式会社内 (72)発明者 小谷 誠 大阪府豊中市利倉１丁目１番１号 西山ス テンレスケミカル株式会社内 (72)発明者 溝口 幸一 大阪府豊中市利倉１丁目１番１号 西山ス テンレスケミカル株式会社内 Ｆターム(参考） 2H088 FA18 FA30 HA01 MA20 2H090 JB02 JC19 JC20 JD14 4G059 AA08 AB05 AB19 AC03 BB04 BB14 5C012 AA09 BB01 5C040 GA09 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 7 Identification code FI theme code (reference) H01J 17/16 H01J 17/16 (72) Inventor Katsuhiro Itokawa 1-1-1, Rikukura, Toyonaka-shi, Osaka Nishiyama Stainless Chemical Co., Ltd. (72) Inventor Makoto Otani 1-1-1 Rikura, Toyonaka-shi, Osaka Nishiyama Stainless Chemical Co., Ltd. (72) Koichi Mizoguchi 1-1-1 Rikura, Toyonaka-shi, Osaka Nishiyama F term in Stainless Chemical Co., Ltd. (reference) 2H088 FA18 FA30 HA01 MA20 2H090 JB02 JC19 JC20 JD14 4G059 AA08 AB05 AB19 AC03 BB04 BB14 5C012 AA09 BB01 5C040 GA09
Claims (7)
する化学加工液貯溜槽の底部から気泡を伴なう化学加工
液の上昇液流を発生させ、この加工液中にガラス基板を
浸漬して、ガラス基板の外表面の片側の一部或いは全
部、或いは外表面の両側の一部或いは全部を加工するこ
とを特徴とするガラス基板の化学加工方法。1. A rising flow of the chemical processing liquid accompanied by bubbles is generated from the bottom of a chemical processing liquid storage tank which stores the chemical processing liquid containing hydrofluoric acid as a main component, and a glass substrate is placed in the processing liquid. A method of chemically processing a glass substrate, which comprises immersing and processing part or all of one side of the outer surface of the glass substrate or part or all of both sides of the outer surface.
ら溢出させる請求項１に記載のガラス基板の化学加工方
法。2. The chemical processing method for a glass substrate according to claim 1, wherein the rising liquid flow overflows from the peripheral portion of the chemical processing liquid storage tank.
た化学加工液を再度、化学加工液貯溜槽に供給する請求
項２に記載のガラス基板の化学加工方法。3. The chemical processing method for a glass substrate according to claim 2, wherein the chemical processing liquid overflowing from the peripheral portion of the chemical processing liquid storage tank is supplied to the chemical processing liquid storage tank again.
た化学加工液をフィルターに通し、化学加工により生じ
た反応生成物を除去した後、化学加工液貯溜槽に供給す
る請求項３に記載のガラス基板の化学加工方法。4. The chemical processing liquid storage tank is supplied with the chemical processing liquid overflowing from the peripheral edge portion of the chemical processing liquid storage tank after passing through a filter to remove reaction products generated by the chemical processing. A method for chemically processing a glass substrate as described above.
を備えた化学加工装置において、気泡発生装置と、前記
化学加工液貯溜槽から溢出させた化学加工液を受ける溢
出液受け槽と、前記溢出液受け槽に受けた化学加工液を
再度、化学加工液貯溜槽に送るポンプとを備えたことを
特徴とする化学加工装置。5. A chemical processing apparatus having a chemical processing liquid storage tank for storing the chemical processing liquid, a bubble generating device, and an overflow liquid receiving tank for receiving the chemical processing liquid overflowed from the chemical processing liquid storage tank, A chemical processing apparatus comprising: a pump for sending the chemical processing liquid received in the overflow liquid receiving tank to the chemical processing liquid storage tank again.
貼り合わせたものの１又は複数を配置するためのガラス
基板収納治具を備える請求項５記載の化学加工装置。6. The chemical processing apparatus according to claim 5, further comprising a glass substrate storage jig for arranging one or a plurality of glass substrates or a pair of glass substrates bonded together.
求項５または請求項６に記載の化学加工装置。7. The chemical processing apparatus according to claim 5, further comprising an ultrasonic oscillator or an oscillating stirring blade.
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|---|---|---|---|
| JP2002110829A JP3524540B2 (en) | 2001-04-12 | 2002-04-12 | Chemical processing method / chemical processing apparatus for glass substrate and glass substrate |
Applications Claiming Priority (3)
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| JP2001114498 | 2001-04-12 | ||
| JP2001-114498 | 2001-04-12 | ||
| JP2002110829A JP3524540B2 (en) | 2001-04-12 | 2002-04-12 | Chemical processing method / chemical processing apparatus for glass substrate and glass substrate |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003322353A Division JP2004099437A (en) | 2001-04-12 | 2003-09-16 | Method and apparatus for chemically processing glass substrate |
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| JP2003040649A true JP2003040649A (en) | 2003-02-13 |
| JP3524540B2 JP3524540B2 (en) | 2004-05-10 |
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| JP2005008423A (en) * | 2003-04-24 | 2005-01-13 | Nishiyama Stainless Chem Kk | Method and apparatus for chemically processing glass |
| JP2006528841A (en) * | 2003-07-24 | 2006-12-21 | ケムトレース プレシジョン クリーニング， インコーポレイテッド | Cleaning method and apparatus for silicate materials |
| JP2007284345A (en) * | 2004-03-17 | 2007-11-01 | Nishiyama Stainless Chem Kk | Manufacturing method and its device for glass plate for flat panel display |
| US8009248B2 (en) | 2005-09-30 | 2011-08-30 | Sharp Kabushiki Kaisha | Liquid crystal display and television receiver |
| US8233129B2 (en) | 2008-02-26 | 2012-07-31 | Hitachi Displays, Ltd. | Method of manufacturing liquid crystal display device including forming beveled sides of substrates forming liquid crystal panel |
| US8279375B2 (en) | 2007-04-16 | 2012-10-02 | Sharp Kabushiki Kaisha | Display apparatus, driving apparatus of display apparatus, and electronic device |
| US8294736B2 (en) | 2006-11-20 | 2012-10-23 | Sharp Kabushiki Kaisha | Display device driving method, driving circuit, liquid crystal display device, and television receiver |
| US8451201B2 (en) | 2005-09-30 | 2013-05-28 | Sharp Kabushiki Kaisha | Liquid crystal display device drive method, liquid crystal display device, and television receiver |
| JP2013155057A (en) * | 2012-01-26 | 2013-08-15 | Sanwa Frost Industry Co Ltd | Method for etching lcd glass substrate and apparatus therefor |
| JP2016179913A (en) * | 2015-03-23 | 2016-10-13 | 三和フロスト工業株式会社 | Etching method of glass substrate and device therefor |
| KR20220103163A (en) | 2019-12-26 | 2022-07-21 | 가부시키가이샤 스크린 홀딩스 | substrate processing equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005008423A (en) * | 2003-04-24 | 2005-01-13 | Nishiyama Stainless Chem Kk | Method and apparatus for chemically processing glass |
| JP2006528841A (en) * | 2003-07-24 | 2006-12-21 | ケムトレース プレシジョン クリーニング， インコーポレイテッド | Cleaning method and apparatus for silicate materials |
| JP4774367B2 (en) * | 2003-07-24 | 2011-09-14 | アプライド マテリアルズ インコーポレイテッド | Method for treating the surface of a quartz semiconductor manufacturing substrate |
| JP2007284345A (en) * | 2004-03-17 | 2007-11-01 | Nishiyama Stainless Chem Kk | Manufacturing method and its device for glass plate for flat panel display |
| US8009248B2 (en) | 2005-09-30 | 2011-08-30 | Sharp Kabushiki Kaisha | Liquid crystal display and television receiver |
| US8451201B2 (en) | 2005-09-30 | 2013-05-28 | Sharp Kabushiki Kaisha | Liquid crystal display device drive method, liquid crystal display device, and television receiver |
| US8294736B2 (en) | 2006-11-20 | 2012-10-23 | Sharp Kabushiki Kaisha | Display device driving method, driving circuit, liquid crystal display device, and television receiver |
| US8279375B2 (en) | 2007-04-16 | 2012-10-02 | Sharp Kabushiki Kaisha | Display apparatus, driving apparatus of display apparatus, and electronic device |
| US8233129B2 (en) | 2008-02-26 | 2012-07-31 | Hitachi Displays, Ltd. | Method of manufacturing liquid crystal display device including forming beveled sides of substrates forming liquid crystal panel |
| JP2013155057A (en) * | 2012-01-26 | 2013-08-15 | Sanwa Frost Industry Co Ltd | Method for etching lcd glass substrate and apparatus therefor |
| JP2016179913A (en) * | 2015-03-23 | 2016-10-13 | 三和フロスト工業株式会社 | Etching method of glass substrate and device therefor |
| KR20220103163A (en) | 2019-12-26 | 2022-07-21 | 가부시키가이샤 스크린 홀딩스 | substrate processing equipment |
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