JP2003037343A - Mounting substrate of surface acoustic wave element - Google Patents

Mounting substrate of surface acoustic wave element

Info

Publication number
JP2003037343A
JP2003037343A JP2001222441A JP2001222441A JP2003037343A JP 2003037343 A JP2003037343 A JP 2003037343A JP 2001222441 A JP2001222441 A JP 2001222441A JP 2001222441 A JP2001222441 A JP 2001222441A JP 2003037343 A JP2003037343 A JP 2003037343A
Authority
JP
Japan
Prior art keywords
acoustic wave
surface acoustic
wave element
mounting substrate
mounting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001222441A
Other languages
Japanese (ja)
Inventor
Toshio Hario
敏男 針生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Kokusai Electric Inc
Original Assignee
Hitachi Kokusai Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Kokusai Electric Inc filed Critical Hitachi Kokusai Electric Inc
Priority to JP2001222441A priority Critical patent/JP2003037343A/en
Publication of JP2003037343A publication Critical patent/JP2003037343A/en
Pending legal-status Critical Current

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  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PROBLEM TO BE SOLVED: To solve a problem that a parasitic capacitive component formed by the pattern of a surface acoustic wave element and the GND pattern on the rear surface of a mounting substrate has an increasing trend. SOLUTION: In a mounting substrate 2 having a conductive film 1 on the side opposite to the side for mounting a surface acoustic wave element 3, the mounting substrate structure has a space 4 thinner than the substrate 2 over a range wider than the surface acoustic wave element region and opening to the side for mounting the surface acoustic wave element 3 wherein a constant distance is kept between the pattern of the surface acoustic wave element and the mounting substrate.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、弾性表面波素子を
実装する実装基板の構造に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a mounting board on which a surface acoustic wave device is mounted.

【0002】[0002]

【従来の技術】図2によって、従来の弾性表面波素子を
実装する実装基板の構造を説明する。図2は、従来の弾
性表面波素子を実装する実装基板の構造を示す断面図で
ある。弾性表面波素子 3 は電極 6 を備え、実装基板 2
は、電極 5 を備える。弾性表面波素子 3 と実装基板
2 とは、それぞれの電極 6 と電極 5 とを、はんだ、導
電性接着剤等(図示しない)で、電気的、機械的に結合
される。
2. Description of the Related Art The structure of a conventional mounting board for mounting a surface acoustic wave device will be described with reference to FIG. FIG. 2 is a sectional view showing the structure of a mounting board on which a conventional surface acoustic wave device is mounted. The surface acoustic wave element 3 includes electrodes 6 and is mounted on the mounting substrate 2
Comprises an electrode 5. Surface acoustic wave element 3 and mounting board
2 is electrically and mechanically coupled to the respective electrodes 6 and 5 with solder, a conductive adhesive or the like (not shown).

【0003】実装基板 2 をモジュールと考えた場合、
このモジュール(弾性表面波素子 3を搭載した実装基板
2 )を親基板(図示しない)に実装することになる。
しかし、親基板の実装面には、GND(接地)パターンが
形成されている。従って、モジュール単体での電気的特
性と、親基板に実装した場合の電気的特性に差が生じる
ことが考えられる。このため、単体のときと親基板に実
装したときとのモジュールの電気的特性に差を生じさせ
ないために、モジュール側で、図2に示すように、実装
基板 2 の裏面に GND パターンを形成する。
When the mounting board 2 is considered as a module,
This module (mounting board with surface acoustic wave element 3 mounted
2) will be mounted on the parent board (not shown).
However, a GND (ground) pattern is formed on the mounting surface of the parent board. Therefore, it is conceivable that there will be a difference between the electrical characteristics of the module itself and the electrical characteristics of the module mounted on the parent board. For this reason, in order to prevent a difference in the electrical characteristics of the module between when mounted alone and when mounted on the parent board, a GND pattern is formed on the back surface of the mounting board 2 on the module side, as shown in FIG. .

【0004】弾性表面波素子 3 の実装基板 2 への実装
は、図2に示すように、従来は、上表面が平坦な実装基
板 2 の上に、弾性表面波素子 3 を搭載していた。実装
基板 2 と弾性表面波素子 3 の間隔は、実装基板の電極
5 と弾性表面波素子 3 の電極 6 のそれぞれの厚みの
合計分程度である。
As for mounting the surface acoustic wave device 3 on the mounting substrate 2, as shown in FIG. 2, conventionally, the surface acoustic wave device 3 is mounted on the mounting substrate 2 having a flat upper surface. The distance between the mounting board 2 and the surface acoustic wave element 3 is the electrode of the mounting board.
It is about the sum of the respective thicknesses of 5 and the electrode 6 of the surface acoustic wave element 3.

【0005】[0005]

【発明が解決しようとする課題】前述の従来技術には、
弾性表面波素子のパターンと実装基板の裏面の GND パ
ターンとの間で生ずる寄生容量成分が大きいう欠点があ
った。本発明の目的は、上記のような欠点を除去し、弾
性表面波素子のパターンと実装基板の裏面の GND パタ
ーンで構成される寄生容量成分の小さい弾性表面波素子
の実装基板を提供することにある。
DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention
There is a drawback that the parasitic capacitance component generated between the surface acoustic wave element pattern and the GND pattern on the back surface of the mounting substrate is large. An object of the present invention is to eliminate the above drawbacks and provide a surface acoustic wave device mounting board having a small parasitic capacitance component, which is composed of a surface acoustic wave device pattern and a GND pattern on the back surface of the mounting board. is there.

【0006】[0006]

【課題を解決するための手段】上記の目的を達成するた
めに、本発明の弾性表面波素子の実装基板は、弾性表面
波素子のパターンと実装基板の間がある一定の距離を持
つように、弾性表面波素子を実装する実装基板の表面
に、板厚より薄くかつ開口した空間を有する実装基板を
形成したものである。
In order to achieve the above object, the surface acoustic wave device mounting substrate of the present invention is arranged such that there is a certain distance between the surface acoustic wave device pattern and the mounting substrate. A mounting board, which is thinner than the plate thickness and has an open space, is formed on the surface of the mounting board on which the surface acoustic wave element is mounted.

【0007】[0007]

【発明の実施の形態】図1によって、本発明の弾性表面
波素子の実装基板の一実施例を説明する。図1は、本発
明の弾性表面波素子を実装する実装基板の構造を示す断
面図である。図1において、弾性表面波素子 3 がガラ
スエポキシ基板等からなる実装基板2′上に実装されて
いる。弾性表面波素子 3 は、例えば、圧電性基板 3′
の表面に金属皮膜、例えば、アルミニウム皮膜によって
パターン 7 を形成してセラミック等の材料のパッケー
ジ 3″でパッケージングして成る。また、実装基板 2′
の弾性表面波素子 3 の実装面と対向する面には、図2
と同様に、GND パターン 1 を持つ。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a surface acoustic wave device mounting substrate according to the present invention will be described with reference to FIG. FIG. 1 is a sectional view showing the structure of a mounting board on which the surface acoustic wave element of the present invention is mounted. In FIG. 1, a surface acoustic wave device 3 is mounted on a mounting substrate 2'made of a glass epoxy substrate or the like. The surface acoustic wave element 3 is, for example, a piezoelectric substrate 3 '
A pattern 7 is formed on the surface of the metal film with a metal film, for example, an aluminum film, and is packaged in a package 3 ″ made of a material such as ceramic.
The surface facing the mounting surface of the surface acoustic wave element 3 in FIG.
Like, has GND pattern 1.

【0008】図1において、実装基板 2′は、弾性表面
波素子 3 の圧電性基板 3′のパターン 7 の領域(実装
面積)より広い範囲で、かつ、実装基板 2′の板厚より
薄い空間 4 を持つ。この空間(開口部) 4 の開口部の
形状は、圧電性基板 3′と同じ形状でも良いし、方形、
円形、多角形、等でも良い。また、空間(開口部)4 の
開口部は、圧電性基板 3′のパターン 7 の領域より小
さくても良い。実装基板 2′上に形成した弾性表面波素
子 3 と電気的、機械的に結合するための電極 5 と弾性
表面波素子 3 の電極 6 を接続している。これにより、
弾性表面波素子 3 が実装され、圧電性基板 3′上のパ
ターン 7 と実装基板 2′の間には、距離 8 ができる。
本構造によれば、圧電性基板 3′上のパターン 7 と実
装基板 2′の GND パターン 1 間で構成される寄生容量
値 C を低減することができる。
In FIG. 1, the mounting substrate 2'is a space wider than the area (mounting area) of the pattern 7 of the piezoelectric substrate 3'of the surface acoustic wave element 3 and thinner than the thickness of the mounting substrate 2 '. Have 4 The shape of the opening of this space (opening) 4 may be the same as that of the piezoelectric substrate 3 ', or may be rectangular,
It may be circular, polygonal, or the like. The opening of the space (opening) 4 may be smaller than the area of the pattern 7 of the piezoelectric substrate 3 '. An electrode 5 for electrically and mechanically coupling the surface acoustic wave element 3 formed on the mounting substrate 2 ′ and an electrode 6 of the surface acoustic wave element 3 are connected. This allows
The surface acoustic wave device 3 is mounted, and a distance 8 is formed between the pattern 7 on the piezoelectric substrate 3'and the mounting substrate 2 '.
According to this structure, the parasitic capacitance value C formed between the pattern 7 on the piezoelectric substrate 3'and the GND pattern 1 on the mounting substrate 2'can be reduced.

【0009】例えば、寄生容量値 C を求める計算式
を、次の式(1) として、従来の実装基板を使用した場合
と本発明の実装基板を使用した場合の各寄生容量値を算
出し比較してみる。 C =( S ×ε0 ×εr )÷ d ‥‥‥式(1) ここで、C は容量値(単位:F )、S はパターン 7 の
面積(単位:cm2 )、ε0は 8.854 × 10-14(単位:F
/cm )、εr は比誘電率、d は基板の厚さ(単位:cm
)である。
For example, the following formula (1) is used to calculate the parasitic capacitance value C, and the respective parasitic capacitance values when using the conventional mounting board and when using the mounting board of the present invention are calculated and compared. I will try. C = (S × ε 0 × ε r ) ÷ d ・ ・ ・ Equation (1) where C is the capacitance value (unit: F), S is the area of pattern 7 (unit: cm 2 ), and ε 0 is 8.854. × 10 -14 (Unit: F
/ Cm), ε r is the relative permittivity, d is the thickness of the substrate (unit: cm
).

【0010】パターン 7 の面積を、0.2 cm × 0.2 cm
、実装基板 2′の材質をガラスエポキシ、厚さを 0.16
cm 、空間 4 の厚さを 0.1 cm 、弾性表面波素子 3 の
圧電性基板 3′とパッケージ 3″の合計の厚さを 0.05
cm とする。また、実装基板2′の電極 5 と弾性表面波
素子 3 の電極 6 の厚みは無視するものとする。圧電性
基板 3′とパッケージ 3″の比誘電率を 10 、実装基板
2′の比誘電率を 4.5 とすると、パターン 7 と実装基
板 2′の裏面の GND パターン 1 間の容量値 C が、従
来の実装基板 2(図2)に実装した場合には、約 0.09
pF 、本発明の実装基板 2′(図1)に実装した場合に
は、約 0.03 pF となり、寄生容量を約 1/3 に抑えるこ
とができる。寄生容量の影響は、例えば、電圧制御発振
器に弾性表面波素子を共振器として実装した場合では、
寄生容量成分が発振周波数および位相雑音特性に影響し
て、特に、位相雑音の劣化の原因となる。
The area of pattern 7 is 0.2 cm × 0.2 cm
, Mounting board 2'material is glass epoxy, thickness is 0.16
cm, the thickness of the space 4 is 0.1 cm, and the total thickness of the piezoelectric substrate 3 ′ and the package 3 ″ of the surface acoustic wave element 3 is 0.05.
cm. Further, the thickness of the electrode 5 of the mounting substrate 2'and the thickness of the electrode 6 of the surface acoustic wave element 3 are ignored. Piezoelectric substrate 3'and package 3 "with relative permittivity of 10, mounting substrate
If the relative permittivity of 2'is 4.5, the capacitance value C between the pattern 7 and the GND pattern 1 on the backside of the mounting board 2'is about 0.09 when mounted on the conventional mounting board 2 (Fig. 2).
When pF is mounted on the mounting substrate 2 '(FIG. 1) of the present invention, it becomes about 0.03 pF, and the parasitic capacitance can be suppressed to about 1/3. The effect of parasitic capacitance is, for example, when a surface acoustic wave device is mounted as a resonator in a voltage controlled oscillator,
The parasitic capacitance component influences the oscillation frequency and the phase noise characteristic, and particularly causes deterioration of the phase noise.

【0011】以上は弾性表面波素子をパッケージに組み
込んで実装した場合について述べたが、パッケージの有
無には依存せず、弾性表面波素子をチップ状態(例え
ば、図1の圧電性基板 3′)で実装する場合にも適用で
きる。図3は、本発明の別の実施例で、弾性表面波素子
を実装する実装基板の構造を示す断面図である。図3に
示すように、チップ状態である弾性表面波素子 30 を、
パターン 7 が形成されている面を実装基板 2′に向け
た状態で実装した場合には、弾性表面波素子 30 のパタ
ーン 7 形成面側に、縁辺を囲むように周囲電極 9 を形
成し、また、弾性表面波素子 30 の電極 6′を形成して
おき、電極 6′と対になるように実装基板 2″の電極 5
を形成し、かつ、周囲電極 9 対になるように実装基板
2″側に周囲電極 10 を形成した状態で弾性表面波素子
30 を実装すると、これら電極同士が接続され、弾性表
面波素子のパターン 7 を気密性良く実装することが可
能となるばかりでなく、空間 4 により、弾性表面波の
伝播特性を損なわず、また、弾性表面波素子のパターン
7 を損傷させることなく実装することができる。
In the above, the case where the surface acoustic wave element is incorporated and mounted in a package has been described, but the surface acoustic wave element is in a chip state (for example, the piezoelectric substrate 3'in FIG. 1) regardless of the presence or absence of the package. It can also be applied when implementing with. FIG. 3 is a sectional view showing a structure of a mounting board on which a surface acoustic wave device is mounted according to another embodiment of the present invention. As shown in FIG. 3, the surface acoustic wave element 30 in a chip state is
When mounting is performed with the surface on which the pattern 7 is formed facing the mounting substrate 2 ′, the peripheral electrode 9 is formed on the surface of the surface acoustic wave element 30 on which the pattern 7 is formed so as to surround the edge, and , The electrode 6'of the surface acoustic wave element 30 is formed, and the electrode 5'of the mounting substrate 2 "is formed so as to be paired with the electrode 6 '.
And mounting board so that there are 9 pairs of surrounding electrodes.
Surface acoustic wave device with peripheral electrode 10 formed on the 2 ″ side
When 30 is mounted, these electrodes are connected to each other, and not only the pattern 7 of the surface acoustic wave element can be mounted with good airtightness, but the space 4 does not impair the propagation characteristics of the surface acoustic wave. Surface acoustic wave element pattern
It can be implemented without damaging the 7.

【0012】[0012]

【発明の効果】以上のように本発明によれば、弾性表面
波素子を実装する実装基板の表面に、板厚より薄くかつ
開口した空間を有する実装基板構造を形成するため、弾
性表面波素子のパターンと実装基板の GND パターンで
構成される寄生容量成分を小さくする方法として有効で
ある。また、弾性表面波素子をフェイスダウン方式で実
装する場合にも弾性表面波パターンと実装基板間に空間
を確保できるため、弾性表面波の伝播特性の劣化防止お
よび弾性表面波素子のパターンの保護にも有効である。
As described above, according to the present invention, since the mounting board structure having a space thinner than the plate thickness and having an opening is formed on the surface of the mounting board on which the surface acoustic wave element is mounted, the surface acoustic wave element is formed. It is effective as a method to reduce the parasitic capacitance component composed of the pattern and the GND pattern of the mounting board. Further, even when the surface acoustic wave element is mounted face down, a space can be secured between the surface acoustic wave pattern and the mounting board, so that it is possible to prevent the deterioration of the propagation characteristics of the surface acoustic wave and to protect the surface acoustic wave element pattern. Is also effective.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明の弾性表面波素子実装基板の一実施例
の構造を示す断面図。
FIG. 1 is a sectional view showing a structure of an embodiment of a surface acoustic wave element mounting substrate of the present invention.

【図2】 従来の弾性表面波素子実装基板の構造を示す
断面図。
FIG. 2 is a cross-sectional view showing the structure of a conventional surface acoustic wave element mounting substrate.

【図3】 本発明の弾性表面波素子実装基板の一実施例
の構造を示す断面図。
FIG. 3 is a sectional view showing the structure of an embodiment of the surface acoustic wave element mounting substrate of the present invention.

【符号の説明】[Explanation of symbols]

1:GND パターン、 2,2′:実装基板、 3,30:弾
性表面波素子、 3′:弾性表面波素子の基板、 3″:
弾性表面波素子のパッケージ、 4:空間、 5,6:電
極、 7:パターン、 8:距離、 9,10:周囲電極。
1: GND pattern, 2, 2 ': mounting substrate, 3, 30: surface acoustic wave element, 3': surface acoustic wave element substrate, 3 ":
Surface acoustic wave device package, 4: space, 5, 6: electrode, 7: pattern, 8: distance, 9, 10: surrounding electrode.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 弾性表面波素子を実装し、該弾性表面波
素子を実装する面と対向する面に接地パターンを有する
実装基板において、前記弾性表面波素子を実装する面に
開口した空間を有することを特徴とする弾性表面波素子
の実装基板。
1. A mounting board on which a surface acoustic wave element is mounted and which has a ground pattern on a surface facing the surface on which the surface acoustic wave element is mounted has a space opened on the surface on which the surface acoustic wave element is mounted. A mounting substrate for a surface acoustic wave device, characterized in that
【請求項2】 請求項1記載の弾性表面波素子の実装基
板において、前記開口した空間は、前記弾性表面波素子
のパターンの領域より広い範囲でしかも前記実装基板の
板厚より小さな深さであることを特徴とする弾性表面波
素子の実装基板。
2. The surface acoustic wave device mounting substrate according to claim 1, wherein the opened space is wider than a region of a pattern of the surface acoustic wave device and has a depth smaller than a plate thickness of the mounting substrate. A mounting substrate for a surface acoustic wave device, characterized in that
JP2001222441A 2001-07-24 2001-07-24 Mounting substrate of surface acoustic wave element Pending JP2003037343A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001222441A JP2003037343A (en) 2001-07-24 2001-07-24 Mounting substrate of surface acoustic wave element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001222441A JP2003037343A (en) 2001-07-24 2001-07-24 Mounting substrate of surface acoustic wave element

Publications (1)

Publication Number Publication Date
JP2003037343A true JP2003037343A (en) 2003-02-07

Family

ID=19055919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001222441A Pending JP2003037343A (en) 2001-07-24 2001-07-24 Mounting substrate of surface acoustic wave element

Country Status (1)

Country Link
JP (1) JP2003037343A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1506861A2 (en) 2003-08-14 2005-02-16 Sony Corporation Liquid discharger and liquid discharge adjustment method
EP1512538A2 (en) 2003-09-05 2005-03-09 Sony Corporation Ejection control device, liquid ejecting device, liquid ejecting method, and recording medium and program used therewith
EP1531050A1 (en) 2003-11-13 2005-05-18 Sony Corporation Liquid discharging head and liquid discharging device
US7524020B2 (en) 2005-03-25 2009-04-28 Sony Corporation Liquid ejecting head and liquid ejecting apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1506861A2 (en) 2003-08-14 2005-02-16 Sony Corporation Liquid discharger and liquid discharge adjustment method
EP1512538A2 (en) 2003-09-05 2005-03-09 Sony Corporation Ejection control device, liquid ejecting device, liquid ejecting method, and recording medium and program used therewith
EP1531050A1 (en) 2003-11-13 2005-05-18 Sony Corporation Liquid discharging head and liquid discharging device
CN1328050C (en) * 2003-11-13 2007-07-25 索尼株式会社 Liquid discharging head and liquid discharging device
US7524020B2 (en) 2005-03-25 2009-04-28 Sony Corporation Liquid ejecting head and liquid ejecting apparatus

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