JP2002348199A - Method for making group iii nitride thin membrane - Google Patents
Method for making group iii nitride thin membraneInfo
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- JP2002348199A JP2002348199A JP2001160139A JP2001160139A JP2002348199A JP 2002348199 A JP2002348199 A JP 2002348199A JP 2001160139 A JP2001160139 A JP 2001160139A JP 2001160139 A JP2001160139 A JP 2001160139A JP 2002348199 A JP2002348199 A JP 2002348199A
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- group iii
- gan
- iii nitride
- thin film
- nitride thin
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ＧａＮ系III族窒
化物薄膜の形成方法、特に分子線エピタキシー法（ＭＢ
Ｅ）によるＧａＮ系III族窒化物薄膜（極性：（０００
１））の形成方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a GaN group III nitride thin film, and more particularly to a method of forming a molecular beam epitaxy (MB
E) GaN-based group III nitride thin film (polarity: (000
The present invention relates to the method 1)).
【０００２】[0002]
【従来の技術】サファイアは、六方晶系の結晶であり、
６個の側面と２個の底面を有している。図４(ａ)は、サ
ファイア結晶の底面に垂直な中心軸線(ｃ軸)を含む方向
の面方位を表した図面であり、同図(ｂ)は、中心軸線を
含まない面方位を表した図面である。同図(ｂ)には、サ
ファイアＡ面、Ｃ面、Ｒ面、Ｍ面が表されている。2. Description of the Related Art Sapphire is a hexagonal crystal,
It has six side surfaces and two bottom surfaces. FIG. 4A is a drawing showing a plane orientation in a direction including a central axis (c-axis) perpendicular to the bottom surface of the sapphire crystal, and FIG. 4B is a drawing showing a plane orientation not including the central axis. It is a drawing. FIG. 4B shows the sapphire A plane, C plane, R plane, and M plane.
【０００３】ここで、サファイアＣ面はサファイア結晶
の底面のことであり、このサファイアＣ面上にＧａＮを
成長させる場合には、通常、六方晶のウルツ鉱型ＧａＮ
がサファイア基板とｃ軸をそろえて成長する。[0003] Here, the sapphire C plane is the bottom surface of the sapphire crystal. When GaN is grown on this sapphire C plane, the hexagonal wurtzite GaN is usually used.
Grows with the c-axis aligned with the sapphire substrate.
【０００４】しかしウルツ鉱型ＧａＮはｃ軸方向に極性
を持つため、通常は図１（ａ）および同図（ｂ）に示す
ように２種類の極性、すなわち２種類の原子の配列状態
を持つ結晶の混在した膜となってしまう。However, since wurtzite GaN has a polarity in the c-axis direction, it usually has two types of polarities, that is, two types of atoms arranged as shown in FIGS. 1 (a) and 1 (b). The resulting film is a mixture of crystals.
【０００５】このサファイアＣ面基板１上に成長するＧ
ａＮ膜において、図１（ａ）に示すようにＧａ原子の直
上にＮ原子が配列された場合をＧａＮ（０００１）（Ｇ
ａ−ｆａｃｅ）図１（ｂ）に示すようにＮ原子の直上に
Ｇａ原子が配列された場合をＧａＮ（０００−１）（Ｎ
−ｆａｃｅ）と呼んでいる。The G grown on the sapphire C-plane substrate 1
In the aN film, as shown in FIG. 1A, the case where N atoms are arranged immediately above Ga atoms is referred to as GaN (0001) (G
a-face) As shown in FIG. 1 (b), a case where Ga atoms are arranged immediately above N atoms is referred to as GaN (000-1) (N
-Face).
【０００６】これら２種類の極性と成長した膜の特性と
は密接に関係しており、ＧａＮ（０００１）膜の方がＧ
ａＮ（０００−１）膜、あるいはＧａＮ（０００１）と
ＧａＮ（０００−１）との混在した膜よりも、光学的、
電気的特性、さらに表面平坦性に優れているということ
が報告されている（Keller et.al.,Appl.Phys.lett.68
(1996)1525, Fuke et al.,J.Appl.Phys.83(1998)76
4）。[0006] These two types of polarities are closely related to the characteristics of the grown film, and the GaN (0001) film has a higher G value.
aN (000-1) film or a film in which GaN (0001) and GaN (000-1) are mixed is more optically
It has been reported that it has excellent electrical properties and surface flatness (Keller et. Al., Appl. Phys. Lett. 68
(1996) 1525, Fuke et al., J. Appl. Phys. 83 (1998) 76
Four).
【０００７】従って、いかに成長する膜の極性をＧａ−
ｆａｃｅに制御するかということが高品質III族窒化物
半導体素子を作成する上での重要なキーポイントとなっ
ている。Accordingly, the polarity of the growing film is changed to Ga-
Face control is an important key point in producing a high-quality group III nitride semiconductor device.
【０００８】有機金属気相成長（ＭＯＣＶＤ）法におい
ては、有機金属ガスの供給時、核密度増大のためにサフ
ァイア基板上に成長させる低温バッファ層のアニール条
件などを制御することにより、成長する膜の特性をＧａ
−ｆａｃｅに制御することがすでに可能となっている。
これに対し、分子線エピタキシー（ＭＢＥ）法において
は、これまでＧａＮ（０００-１）が支配的な膜しか得
られておらず、ＧａＮ（０００１）膜を得ることは不可
能であった。In the metal organic chemical vapor deposition (MOCVD) method, the film to be grown is controlled by controlling the annealing conditions of a low-temperature buffer layer grown on a sapphire substrate in order to increase the nucleus density when the metal organic gas is supplied. The characteristics of Ga
Control to -face is already possible.
On the other hand, in the molecular beam epitaxy (MBE) method, only a film in which GaN (000-1) is dominant has been obtained so far, and it has not been possible to obtain a GaN (0001) film.
【０００９】[0009]
【発明が解決しようとする課題】本発明は、分子線エピ
タキシー（ＭＢＥ）法によるＧａＮ系III族窒化物薄膜
形成の際の問題点を解決するものであり、その目的は、
成長する膜の極性を（０００１）に制御して、従来より
も光学的、電気的に優れたＧａＮ系III族窒化物薄膜を
形成する方法を提供することにある。SUMMARY OF THE INVENTION The present invention is to solve the problems in forming a GaN-based group III nitride thin film by molecular beam epitaxy (MBE).
It is an object of the present invention to provide a method for forming a GaN-based group III nitride thin film that is optically and electrically superior to the related art by controlling the polarity of a film to be grown to (0001).
【００１０】[0010]
【課題を解決するための手段】上記課題を解決するため
に、請求項１記載の発明は、サファイア基板のサファイ
アＣ面に、Ｇａを主成分とする金属を用いた分子線エピ
タキシー法により、ＧａＮ系III族窒化物薄膜をエピタ
キシャル成長させる薄膜形成方法であって、前記サファ
イア基板の前記サファイアＣ面に窒素イオンを照射して
ＡＩＮ層を形成した後、前記ＡｌＮ層表面に前記ＧａＮ
系III族窒化物薄膜を形成する薄膜形成方法である。請
求項２記載の発明は、前記ＡｌＮ膜を形成する際に、前
記サファイヤ基板を８００℃以上１１００℃以下に昇温
させる請求項１記載の薄膜形成方法である。請求項３記
載の発明は、前記ＡｌＮ膜を形成する際に、前記窒素イ
オンを５０ｅＶ以上１０００ｅＶに加速する請求項１又
は請求項２のいずれか１項記載の薄膜形成方法である。
請求項４記載の発明は、前記ＧａＮ系III族窒化物薄膜
は、窒素プラズマまたはアンモニアと、Ｇａを主成分と
する金属とを前記ＡｌＮ層表面に照射して形成する請求
項１乃至請求項３のいずれか１項記載の薄膜形成方法で
ある。In order to solve the above-mentioned problems, the present invention is directed to a sapphire substrate having a sapphire C-plane formed on a sapphire substrate by a molecular beam epitaxy method using a metal containing Ga as a main component. A thin film forming method for epitaxially growing a group III nitride thin film, wherein the sapphire C surface of the sapphire substrate is irradiated with nitrogen ions to form an AIN layer, and then the GaN layer is formed on the surface of the AlN layer.
This is a thin film forming method for forming a group III nitride thin film. The invention according to claim 2 is the thin film forming method according to claim 1, wherein the temperature of the sapphire substrate is raised to 800 ° C. or more and 1100 ° C. or less when the AlN film is formed. The invention according to claim 3 is the thin film forming method according to claim 1 or 2, wherein the nitrogen ions are accelerated to 50 eV to 1000 eV when the AlN film is formed.
According to a fourth aspect of the present invention, the GaN-based group III nitride thin film is formed by irradiating the surface of the AlN layer with nitrogen plasma or ammonia and a metal containing Ga as a main component. 5. The method for forming a thin film according to any one of the above items.
【００１１】本発明は上記のように構成されており、サ
ファイア基板のサファイアＣ面を表面に露出させ、その
Ｃ面を清浄化処理した後に、該サファイア基板を８００
℃以上１１００℃以下に加熱した状態で、サファイアＣ
面に窒素イオンを照射し、ＡＩＮ（０００１）層を形成
している。The present invention is configured as described above. After exposing the sapphire C surface of the sapphire substrate to the surface and cleaning the C surface, the sapphire substrate is removed by 800.
Sapphire C while heated to 1100 ° C or higher
The surface is irradiated with nitrogen ions to form an AIN (0001) layer.
【００１２】窒素イオンは、窒素ガスをイオン源とし、
この窒素イオンを５０ｅＶ以上１０００ｅＶ以下に加速
し、サファイアＣ面に照射している。[0012] Nitrogen ions use nitrogen gas as an ion source,
The nitrogen ions are accelerated to 50 eV or more and 1000 eV or less, and are irradiated on the sapphire C surface.
【００１３】そして、形成したＡＩＮ（０００１）層の
表面に、所望の方法により、ＧａＮ薄膜等を形成する
と、III族窒化物系の（０００１）薄膜が形成される。When a GaN thin film or the like is formed on the surface of the formed AIN (0001) layer by a desired method, a (0001) group III nitride-based thin film is formed.
【００１４】ここでIII族窒化物薄膜は、ＧａＮ系の
他、III族金属元素としてＩｎ、Ａｌ、を含んでもよい
し、またドーパントとして、Ｂｅ、Ｍｇ、Ｓｉ等を含ん
でもよい。Here, the group III nitride thin film may contain In or Al as a group III metal element, or may contain Be, Mg, Si or the like as a dopant, in addition to a GaN-based thin film.
【００１５】[0015]
【発明の実施の形態】以下この発明の実施例を図面を参
照して説明する。Embodiments of the present invention will be described below with reference to the drawings.
【００１６】図３の符号１０は、本発明に用いることが
できる分子線エピタキシー装置を示している。Reference numeral 10 in FIG. 3 indicates a molecular beam epitaxy apparatus that can be used in the present invention.
【００１７】この分子線エピタキシー装置１０は、真空
槽１１を有しており、その底壁側には、イオンガン１２
とプラズマガン１３と金属ソース１４とアンモニアガス
導入用ノズル１５とが配置されている。真空槽１０の天
井側には、ヒータ１７が配置されている。The molecular beam epitaxy apparatus 10 has a vacuum chamber 11 and an ion gun 12 on its bottom wall.
, A plasma gun 13, a metal source 14, and an ammonia gas introduction nozzle 15. On the ceiling side of the vacuum chamber 10, a heater 17 is arranged.
【００１８】イオンガン１２は、引き出し電極３１と、
グリッド３２、電子放出フィラメント３３とを有してお
り、ガス導入管３４から容器３５内に窒素ガスを導入
し、電子放出フィラメント３３からグリッド３２に対し
て電子線を射出させ、窒素ガスに照射すると、窒素ガス
は電子衝撃によってイオン化し、窒素イオンが生成され
る。The ion gun 12 includes an extraction electrode 31 and
It has a grid 32 and an electron emission filament 33, and introduces nitrogen gas into the container 35 from the gas introduction pipe 34, emits an electron beam from the electron emission filament 33 to the grid 32, and irradiates the nitrogen gas. The nitrogen gas is ionized by electron bombardment to generate nitrogen ions.
【００１９】このときサファイア基板２１に対するグリ
ッドの電位ＶAを＋５０〜＋１０００Ｖに保つと、生成
された窒素イオンは電場によって５０〜１０００ｅＶに
加速され、容器３５の開口から真空槽１１内に放出され
るようになっている。このとき引き出し電極の電位ＶEX
を負電位に保つと、イオンガン１２内で生成した窒素イ
オンがサファイア基板方向に効果的に引き出せる。At this time, if the potential VA of the grid with respect to the sapphire substrate 21 is kept at +50 to +1000 V, the generated nitrogen ions are accelerated to 50 to 1000 eV by the electric field and discharged into the vacuum chamber 11 from the opening of the container 35. It has become. At this time, the potential V EX of the extraction electrode
Is maintained at a negative potential, nitrogen ions generated in the ion gun 12 can be effectively extracted toward the sapphire substrate.
【００２０】プラズマガン１３は、ＰＢＮ管３６を有し
ており、該ＰＢＮ管３６の周囲には、高周波コイル３７
が巻回されている。ガス導入管３８からＰＢＮ管内に、
窒素ガスやアンモニアガス等の含窒素原子ガスを導入
し、コイル３７に高周波電圧を印加すると、ＰＢＮ管３
６内の含窒素原子ガスがプラズマ化し、プラズマ中に含
まれる窒素ラジカルが真空槽１１内に放出されるように
なっている。The plasma gun 13 has a PBN tube 36, and a high frequency coil 37 is provided around the PBN tube 36.
Is wound. From the gas introduction pipe 38 into the PBN pipe,
When a nitrogen-containing atomic gas such as nitrogen gas or ammonia gas is introduced and a high-frequency voltage is applied to the coil 37, the PBN tube 3
The nitrogen-containing atom gas in 6 is turned into plasma, and nitrogen radicals contained in the plasma are released into the vacuum chamber 11.
【００２１】また、金属ソース１４内にはＧａを主成分
とする金属材料３９が配置されており、金属ソース１４
を加熱すると、金属材料３９から真空槽１１内にＧａを
主成分とする分子線が放出されるようになっている。A metal material 39 containing Ga as a main component is disposed in the metal source 14.
Is heated, a molecular beam mainly containing Ga is emitted from the metal material 39 into the vacuum chamber 11.
【００２２】[0022]
【実施例】図３の符号２１は、成膜対象であるサファイ
ア基板を示している。このサファイア基板２１は、その
表面に、サファイアＣ面２８が露出されている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference numeral 21 in FIG. 3 denotes a sapphire substrate on which a film is to be formed. The sapphire substrate 21 has a sapphire C surface 28 exposed on the surface.
【００２３】先ず、成膜対象のサファイア基板２１を、
そのサファイアＣ面２８を真空槽１１の底壁側に向けて
ヒータ１７近傍に配置し、ヒータ１７に通電して発熱さ
せ、サファイア基板２１を９５０℃に加熱して清浄化処
理した後、９００℃まで降温させ、サファイア基板２１
をその温度に保持する。First, a sapphire substrate 21 for forming a film is
The sapphire C surface 28 is arranged near the heater 17 with the sapphire C surface 28 facing the bottom wall of the vacuum chamber 11, and the heater 17 is energized to generate heat. The sapphire substrate 21
At that temperature.
【００２４】次いで、イオンガン１２から窒素イオンを
放出させると、窒素イオンの飛行先には、サファイア基
板２１のサファイアＣ面２８が位置しており、そのサフ
ァイアＣ面２８に窒素イオンが照射されると、ＡＩＮ層
が形成される。ここでは、窒素イオンの加速電圧は３５
０ｅＶであった。得られたＡＩＮ層の極性は（０００
１）であった。Next, when nitrogen ions are released from the ion gun 12, the sapphire C surface 28 of the sapphire substrate 21 is located at the destination of the nitrogen ions, and when the sapphire C surface 28 is irradiated with nitrogen ions. , AIN layer is formed. Here, the acceleration voltage of nitrogen ions is 35
It was 0 eV. The polarity of the obtained AIN layer is (000
1).
【００２５】窒素イオンを３０分照射し、所定膜厚にＡ
ｌＮ層を形成した後、サファイア基板２１の温度を６０
０℃まで降温させる。Irradiate with nitrogen ions for 30 minutes to obtain a film having a predetermined thickness.
After forming the 1N layer, the temperature of the sapphire substrate 21 is raised to 60
Cool down to 0 ° C.
【００２６】次いで、プラズマガン１３から窒素プラズ
マを放出させると共に、金属ソース１４からＧａを主成
分とする金属を放出させ、ＡｌＮ表面に照射すると、Ｇ
ａＮを主成分とするＧａＮ系III族窒化物薄膜が成長す
る。得られた薄膜の極性は（０００１）であった。Next, nitrogen plasma is emitted from the plasma gun 13, and metal containing Ga as the main component is emitted from the metal source 14.
A GaN-based group III nitride thin film mainly composed of aN grows. The polarity of the obtained thin film was (0001).
【００２７】図２(ａ)の符号２２は、形成されたＡｌＮ
層を示しており、符号２３は、ＧａＮ系III族窒化物薄
膜を示している。窒素イオンの照射時間は１０分〜２時
間の範囲で同じような結果が得られた。Reference numeral 22 in FIG. 2A indicates the formed AlN
Reference numeral 23 denotes a GaN-based group III nitride thin film. Similar results were obtained when the irradiation time of nitrogen ions was in the range of 10 minutes to 2 hours.
【００２８】[0028]
【実施例】次に、別のサファイア基板を分子線エピタキ
シー装置１０に装着し、９５０℃に加熱して清浄化処理
した後、９００℃に降温させ、その温度を保持し、イオ
ンガン１２から３５０ｅＶに加速した窒素イオンをサフ
ァイアＣ面に照射し、ＡＩＮ層を形成した。照射時間は
３０分であり、得られたＡＩＮ層の極性は（０００１）
であった。Next, another sapphire substrate was mounted on the molecular beam epitaxy apparatus 10 and heated at 950 ° C. to perform a cleaning treatment. Thereafter, the temperature was lowered to 900 ° C., and the temperature was maintained. The sapphire C plane was irradiated with accelerated nitrogen ions to form an AIN layer. The irradiation time was 30 minutes and the polarity of the obtained AIN layer was (0001)
Met.
【００２９】次いで、サファイア基板の温度を８００℃
に降温させ、その温度を保持し、アンモニアガス導入用
ノズル１５内にアンモニアを導入するとともに、金属ソ
ース１４から、Ｇａを主成分とする金属を放出させ、Ａ
ｌＮ層の表面にＧａＮ系III族窒化物薄膜を成長させ
た。Next, the temperature of the sapphire substrate is set to 800 ° C.
The temperature is maintained, the temperature is maintained, ammonia is introduced into the ammonia gas introduction nozzle 15, and a metal containing Ga as a main component is released from the metal source 14.
A GaN-based group III nitride thin film was grown on the surface of the 1N layer.
【００３０】図２(ｂ)の符号２４は、この実施例に用い
たサファイア基板を示しており、符号２５はＡｌＮ層を
示しており、符号２６は、アンモニアを用いて形成した
ＧａＮ系III族窒化物薄膜を示している。Reference numeral 24 in FIG. 2B indicates a sapphire substrate used in this embodiment, reference numeral 25 indicates an AlN layer, and reference numeral 26 indicates a GaN-based group III formed using ammonia. 3 shows a nitride thin film.
【００３１】得られたＧａＮ系III族窒化物薄膜の極性
は（０００１）であった。窒素イオンの照射時間は１０
分〜２時間であればどの程度でも同じような結果が得ら
れた。The polarity of the obtained GaN-based group III nitride thin film was (0001). Nitrogen ion irradiation time is 10
Similar results were obtained at any time from minutes to 2 hours.
【００３２】以上は同じ真空槽１１内で、ＡｌＮ層２
２、２５とＧａＮ系III族窒化物薄膜２３、２６を形成
したが、真空槽１１内で形成されたＡＩＮ（０００１）
層２２、２５の表面が搬送中も清浄に保たれるならば、
III族窒化物薄膜２３、２６を別の装置内に搬入し、Ａ
ｌＮ層２２、２５を形成した真空槽１１とは異なる真空
槽内で形成してもよい。In the above, the AlN layer 2 is placed in the same vacuum chamber 11.
2 and 25 and the GaN-based group III nitride thin films 23 and 26 were formed, and AIN (0001) formed in the vacuum chamber 11 was formed.
If the surfaces of layers 22, 25 are kept clean during transport,
The group III nitride thin films 23 and 26 are carried into another apparatus, and A
It may be formed in a vacuum chamber different from the vacuum chamber 11 in which the 1N layers 22 and 25 are formed.
【００３３】またイオンガン１２によるサファイアＣ面
への窒素イオンの照射時間は、ＡＩＮ（０００１）がサ
ファイア基板上に形成される程度の時間であればよい。The irradiation time of nitrogen ions on the sapphire C surface by the ion gun 12 may be a time enough to form AIN (0001) on the sapphire substrate.
【００３４】また、ＡＩＮ（０００１）層上に成長させ
るＧａＮ系（０００１）薄膜は、ＭＢＥ、スパッタ、Ｃ
ＶＤ、レーザーデポジッションなどの成長法を用いるこ
ともできる。The GaN (0001) thin film grown on the AIN (0001) layer is formed by MBE, sputtering, C
Growth methods such as VD and laser deposition can also be used.
【００３５】以上のようにして、この発明で形成された
ＧａＮ系薄膜は、所望のタイプの電子デバイスあるいは
光電子デバイスなどに組み込まれて利用出来る。As described above, the GaN-based thin film formed according to the present invention can be used by being incorporated into a desired type of electronic device or optoelectronic device.
【００３６】[0036]
【発明の効果】本発明によれば、従来のＭＢＥ法におい
ては不可能であったＧａＮ系のIII族窒化物薄膜の極性
を光学的、電気的特性、表面平坦性に優れた（０００
１）に制御することが可能となるため、高品質なIII族
窒化物半導体素子を製造することができる。According to the present invention, the polarity of a GaN-based group III nitride thin film, which was impossible with the conventional MBE method, is excellent in optical, electrical characteristics and surface flatness (000).
Since the control can be performed in 1), a high-quality group III nitride semiconductor device can be manufactured.
【図１】(ａ)：ＧａＮ（０００１）（Ｇａ−ｆａｃｅ）
薄膜の原子配列を説明するための図 (ｂ)：ＧａＮ（０００−１）（Ｎ−ｆａｃｅ）薄膜の原
子配列を説明するための図FIG. 1 (a): GaN (0001) (Ga-face)
Diagram for explaining the atomic arrangement of the thin film (b): Diagram for explaining the atomic arrangement of the GaN (000-1) (N-face) thin film
【図２】(ａ)、(ｂ)：本発明方法によって形成されたＧ
ａＮ系III族窒化物薄膜（０００１）を説明するための
図FIG. 2 (a), (b): G formed by the method of the present invention
Diagram for explaining aN-based group III nitride thin film (0001)
【図３】本発明に用いることができる分子線エピタキシ
ャル装置の一例FIG. 3 shows an example of a molecular beam epitaxial apparatus that can be used in the present invention.
【図４】(ａ)、(ｂ)：サファイア結晶の面方位を説明す
るための図FIGS. 4A and 4B are diagrams for explaining the plane orientation of a sapphire crystal.
２１、２４……サファイア基板 ２２、２５……ＡｌＮ層 ２３、２６……III族窒化物薄膜 ２８……サファイアＣ面 21, 24: sapphire substrate 22, 25: AlN layer 23, 26: group III nitride thin film 28: sapphire C plane
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 4G077 AA03 BE15 DA05 ED06 EE08 HA02 SC02 5F041 CA34 CA40 CA66 5F073 CA02 CB05 DA06 5F103 AA04 BB05 BB09 DD01 HH04 HH08 NN00 NN01 RR10 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4G077 AA03 BE15 DA05 ED06 EE08 HA02 SC02 5F041 CA34 CA40 CA66 5F073 CA02 CB05 DA06 5F103 AA04 BB05 BB09 DD01 HH04 HH08 NN00 NN01 RR10
Claims (4)
を主成分とする金属を用いた分子線エピタキシー法によ
り、ＧａＮ系III族窒化物薄膜をエピタキシャル成長さ
せる薄膜形成方法であって、 前記サファイア基板の前記サファイアＣ面に窒素イオン
を照射してＡＩＮ層を形成した後、前記ＡｌＮ層表面に
前記ＧａＮ系III族窒化物薄膜を形成する薄膜形成方
法。1. A sapphire substrate having a sapphire C-plane with Ga
A method of forming a GaN-based group III nitride thin film epitaxially by a molecular beam epitaxy method using a metal mainly comprising Forming a GaN-based group III nitride thin film on the surface of the AlN layer;
イヤ基板を８００℃以上１１００℃以下に昇温させる請
求項１記載の薄膜形成方法。2. The method according to claim 1, wherein the sapphire substrate is heated to a temperature of 800 ° C. or more and 1100 ° C. or less when forming the AlN film.
オンを５０ｅＶ以上１０００ｅＶに加速する請求項１又
は請求項２のいずれか１項記載の薄膜形成方法。3. The thin film forming method according to claim 1, wherein the nitrogen ions are accelerated to 50 eV or more and 1000 eV when forming the AlN film.
ラズマまたはアンモニアと、Ｇａを主成分とする金属と
を前記ＡｌＮ層表面に照射して形成する請求項１乃至請
求項３のいずれか１項記載の薄膜形成方法。4. The GaN group III nitride thin film according to claim 1, wherein the surface of the AlN layer is irradiated with nitrogen plasma or ammonia and a metal containing Ga as a main component. 2. The method for forming a thin film according to claim 1.
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| WO2005088666A1 (en) * | 2004-03-12 | 2005-09-22 | Hamamatsu Photonics K.K. | Process for producing layered member and layered member |
| JP2009260341A (en) * | 2008-04-14 | 2009-11-05 | Sharp Corp | Method of growing active region in semiconductor device using molecular beam epitaxy |
| JP2010018516A (en) * | 2009-07-14 | 2010-01-28 | Sumitomo Electric Ind Ltd | GaN SUBSTRATE |
| US8476086B2 (en) | 2006-11-30 | 2013-07-02 | Sumitomo Electric Industries, Ltd. | Semiconductor device and method of its manufacture |
| JP2015062255A (en) * | 2014-12-15 | 2015-04-02 | 国立大学法人名古屋大学 | Molecular beam epitaxy device |
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| US8888914B2 (en) | 2004-03-12 | 2014-11-18 | Hamamatsu Photonics K.K. | Process for producing layered member and layered member |
| US9431570B2 (en) | 2004-03-12 | 2016-08-30 | Hamamatsu Photonics K.K. | Process for producing layered member and layered member |
| US8476086B2 (en) | 2006-11-30 | 2013-07-02 | Sumitomo Electric Industries, Ltd. | Semiconductor device and method of its manufacture |
| JP2009260341A (en) * | 2008-04-14 | 2009-11-05 | Sharp Corp | Method of growing active region in semiconductor device using molecular beam epitaxy |
| JP2010018516A (en) * | 2009-07-14 | 2010-01-28 | Sumitomo Electric Ind Ltd | GaN SUBSTRATE |
| JP2015062255A (en) * | 2014-12-15 | 2015-04-02 | 国立大学法人名古屋大学 | Molecular beam epitaxy device |
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