JP2002343911A - Substrate - Google Patents
SubstrateInfo
- Publication number
- JP2002343911A JP2002343911A JP2001146286A JP2001146286A JP2002343911A JP 2002343911 A JP2002343911 A JP 2002343911A JP 2001146286 A JP2001146286 A JP 2001146286A JP 2001146286 A JP2001146286 A JP 2001146286A JP 2002343911 A JP2002343911 A JP 2002343911A
- Authority
- JP
- Japan
- Prior art keywords
- metal plate
- plate
- metal
- substrate
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Structure Of Printed Boards (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、電子部品のパワー
モジュール等に使用される基板に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate used for a power module or the like of an electronic component.
【０００２】[0002]
【従来の技術】一般に、ＩＧＢＴ（Insulated Gate Bip
olar Transistor）、パワーＭＯＳＦＥＴ等の電力制御
素子として知られているパワー半導体スイッチング素子
は、これらの複数個を絶縁容器内に密封して構成され、
パワーモジュールとして使用される。このようなパワー
モジュールに使用される回路基板又は放熱基板などの基
板は、アルミナ、窒化アルミなどのセラミック基板の表
面に、銅板などの金属板を接合した構成のものが多用さ
れている。2. Description of the Related Art Generally, an IGBT (Insulated Gate Bip) is used.
olar Transistor), a power semiconductor switching element known as a power control element such as a power MOSFET is configured by sealing a plurality of these in an insulating container,
Used as a power module. As a substrate such as a circuit board or a heat radiating board used for such a power module, a substrate in which a metal plate such as a copper plate is bonded to a surface of a ceramic substrate such as alumina or aluminum nitride is frequently used.
【０００３】前記基板におけるセラミック基板と金属板
との接合は、Ｔｉ、Ｚｒ、Ｈｆ、Ｎｂ等の活性金属をＡ
ｇ−Ｃｕろう材等に１〜１０％程度添加した活性金属ろ
う材を両者間に介在させ、加熱処理をして接合する方法
（活性金属法）や、金属板として酸素を１００〜１００
０ｐｐｍ程度含有するタフピッチ電解銅や表面を１〜１
０μｍ程度酸化させた銅を用いて、セラミック基板と銅
板とを直接加熱接合させる、いわゆるＤＢＣ法（ダイレ
クト・ボンディング・カッパー法）等が知られている。
しかし、熱膨張率が大きく異なるセラミック基板と金属
板を接合するため、接合後の冷却過程や加熱・冷却サイ
クルの付加により、上記熱膨張差に起因する熱応力が発
生する。この応力は、接合部付近のセラミック基板側に
圧縮と引張りの残留応力分布として存在し、特に金属板
の外周端部と近接するセラミック部分に残留応力の主応
力が作用する。この熱応力や残留応力は、セラミック基
板にクラックを生じさせたり、金属板の剥離の発生原因
になる。[0003] In the above-mentioned substrate, the bonding between the ceramic substrate and the metal plate is performed by using an active metal such as Ti, Zr, Hf, Nb, etc.
A method in which an active metal brazing material in which about 1 to 10% is added to a g-Cu brazing material or the like is interposed between the two, and a heat treatment is performed to join them (active metal method).
About 1 ppm of tough pitch electrolytic copper and surface containing about 0 ppm
A so-called DBC method (direct bonding copper method) in which a ceramic substrate and a copper plate are directly heated and joined using copper oxidized by about 0 μm is known.
However, since a ceramic substrate and a metal plate having significantly different coefficients of thermal expansion are joined, a thermal stress due to the difference in thermal expansion occurs due to a cooling process after the joining or the addition of a heating / cooling cycle. This stress exists as a compression and tensile residual stress distribution on the ceramic substrate side near the joint, and the main stress of the residual stress acts particularly on the ceramic portion close to the outer peripheral end of the metal plate. The thermal stress and the residual stress cause cracks in the ceramic substrate and cause peeling of the metal plate.
【０００４】セラミック基板のクラック発生や金属板の
剥離を防止するための技術は、例えば特開平８−２５０
８２３号公報など、従来より数多く提案されている。前
記公知例は、図２に示すように、セラミック基板２とそ
の表裏面に接合された金属板としての銅板１、３より構
成された回路基板において、表面の銅板１は所望の回路
パターンに形成されており、裏面の銅板３は接合時のセ
ラミック基板２の反り等を防止するもので中央付近から
２分割された状態でほぼセラミック基板２の裏面全面に
形成されており、銅板のうち少なくとも表面に接合され
た銅板１は、そのセラミック基板２との接合面と反対面
側の外周縁部内側に複数の孔が形成されていることを特
徴としたものである。Techniques for preventing the occurrence of cracks in a ceramic substrate and peeling of a metal plate are disclosed in, for example, Japanese Patent Application Laid-Open No. 8-250.
823 and the like have been proposed in the past. In the known example, as shown in FIG. 2, in a circuit board composed of a ceramic substrate 2 and copper plates 1 and 3 as metal plates joined to the front and back surfaces thereof, the front surface copper plate 1 is formed in a desired circuit pattern. The copper plate 3 on the back surface is formed on the entire back surface of the ceramic substrate 2 in a state of being divided into two parts from the vicinity of the center, for preventing warpage of the ceramic substrate 2 at the time of joining. The copper plate 1 is characterized in that a plurality of holes are formed inside the outer peripheral edge on the side opposite to the bonding surface with the ceramic substrate 2.
【０００５】[0005]
【発明が解決しようとする課題】前記公知例において、
銅板に形成する孔は、適切な位置、間隔、大きさとしな
ければ、銅板の外周端部への応力集中を有効に分散させ
ることができないため、製品が変る毎に、異なる銅板の
厚さや大きさなどに合せて孔仕様を決定しなければなら
ない。そのため、何度も試作をするなど工数がかかるだ
けでなく、最適な仕様を得ることは難しく、信頼性に問
題を残している。特に、近年、電車の駆動部や電気自動
車等の大電流、高電圧化のニーズに対応して、金属板
は、従来０．３ｍｍ程度の厚みであったのに対して、１
ｍｍを超えるような厚みのものも使用されるようになっ
てきており、このような金属板厚の増大による熱膨張差
等に起因する曲げ応力が一段と大きく作用する基板に対
しては、一層適応することが難しい。また、直接的な製
造工程の繁雑化と製造工数の増大という問題もある。従
って、本発明は、クラックの発生や金属板の剥離がほと
んど発生しない基板を、信頼性高く、かつ生産性高く提
供することを目的とする。In the above-mentioned known example,
Unless the holes to be formed in the copper plate are properly positioned, spaced, and sized, the stress concentration on the outer edge of the copper plate cannot be effectively dispersed, so each time the product changes, the thickness and size of the copper plate will vary. The hole specification must be determined according to the requirements. Therefore, not only does it take a lot of man-hours, such as repeated trial production, but it is difficult to obtain the optimal specifications, leaving a problem in reliability. In particular, in recent years, in response to the needs of large current and high voltage of a drive unit of a train, an electric vehicle, and the like, a metal plate has a thickness of about 0.3 mm in comparison with a conventional one, but has a thickness of about 0.3 mm.
mm, the thickness of which exceeds 1 mm has also been used. Difficult to do. In addition, there is a problem that the manufacturing process is directly complicated and the number of manufacturing steps is increased. Accordingly, an object of the present invention is to provide a highly reliable and highly productive substrate that hardly causes cracks or peeling of a metal plate.
【０００６】[0006]
【課題を解決するための手段】本発明は、絶縁板の表裏
面に金属板が接合された基板において、絶縁板の表側
は、互いに電気的に絶縁されて配設された複数の金属板
を有し、絶縁板の裏側は、表側の金属板と略同一形状で
絶縁板を挟んで略面対称に配設された複数の金属板を有
していることを特徴としている。本発明は、表側の金属
板と裏側の金属板の熱膨張係数は、略同一であることが
好ましい。また本発明は、表側の金属板と裏側の金属板
の厚さが、略同一であることがさらに好ましい。また本
発明は、表側の金属板は金属回路用で、裏側の金属板は
放熱用である回路基板として用いると効果的である。ま
た本発明は、表側及び裏側の金属板とも放熱用とした放
熱基板として用いることもできる。また、本発明におい
て、絶縁板に窒化ケイ素を用いた場合は、曲げ強度が高
いため、クラック発生等の危険性がさらに小さい信頼性
の高い基板とすることができる。また、絶縁板の厚みを
薄くすることが可能であり、熱伝導の良好な基板を実現
することができる。SUMMARY OF THE INVENTION The present invention is directed to a substrate in which a metal plate is joined to the front and back surfaces of an insulating plate, and the front side of the insulating plate comprises a plurality of metal plates arranged electrically insulated from each other. The back side of the insulating plate is characterized in that it has a plurality of metal plates having substantially the same shape as the front side metal plate and arranged substantially plane-symmetrically with the insulating plate interposed therebetween. In the present invention, the thermal expansion coefficients of the front metal plate and the rear metal plate are preferably substantially the same. In the present invention, it is further preferable that the thickness of the front metal plate and the thickness of the rear metal plate are substantially the same. The present invention is also effective when the metal plate on the front side is used for a metal circuit and the metal plate on the back side is used as a circuit board for heat radiation. In addition, the present invention can be used as a heat radiating substrate for radiating both the front and rear metal plates. Further, in the present invention, when silicon nitride is used for the insulating plate, the bending strength is high, so that a highly reliable substrate with a lower risk of cracks and the like can be obtained. Further, the thickness of the insulating plate can be reduced, and a substrate having good heat conductivity can be realized.
【０００７】[0007]
【発明の実施の形態】以下、本発明の実施形態を図に参
照しながら説明する。図１は、本発明の基板の実施の形
態の一例としての回路基板を示す図であり、図１（ｂ）
は側面図を、図１（ａ）は図１（ｂ）のＡ矢視図で表面
の平面図を、図１（ｃ）は図１（ｂ）のＢ矢視図で裏面
の平面図を示す。本発明の回路基板は、絶縁板２の表面
に回路金属板１が、裏面に放熱金属板３が接合されて構
成されており、接合は従来技術で説明した活性金属法や
ＤＢＣ法等によって行うことができる。例えば、絶縁板
２の材質に窒化ケイ素を用い、回路金属板１及び放熱金
属板３に銅を用いる場合、活性金属法を用いたろう付け
が使用される。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a diagram showing a circuit board as an example of an embodiment of the board of the present invention, and FIG.
1A is a side view, FIG. 1A is a plan view of the front surface in an arrow A view of FIG. 1B, and FIG. 1C is a plan view of a rear surface in a view arrow B in FIG. 1B. Show. The circuit board of the present invention is configured such that the circuit metal plate 1 is joined to the front surface of the insulating plate 2 and the heat dissipation metal plate 3 is joined to the back surface, and the joining is performed by the active metal method, the DBC method, or the like described in the related art. be able to. For example, when silicon nitride is used for the material of the insulating plate 2 and copper is used for the circuit metal plate 1 and the heat dissipating metal plate 3, brazing using an active metal method is used.
【０００８】回路金属板１は、図１（ａ）に示すような
回路形状に分割形成された回路金属板１ａ、１ｂ、１ｃ
を用い、絶縁板２の表面上に所定の回路形状でパターニ
ングされたろう材上に配設されて接合される。なお、こ
こで言う回路形状とは、回路金属板１と絶縁板２との当
接面の形状を言う。放熱金属板３は、上記の回路金属板
１ａ、１ｂ、１ｃとほぼ同一の形状に形成された放熱金
属板３ａ、３ｂ、３ｃを用い、絶縁板２を挟んで、回路
金属板１ａ、１ｂ、１ｃとほぼ面対称となるように絶縁
板２の裏面上に所定の回路形状でパターニングされたろ
う材上に配設されて接合される。The circuit metal plate 1 is formed by dividing the circuit metal plate 1a, 1b, 1c into a circuit shape as shown in FIG.
Is arranged on a brazing material patterned on the surface of the insulating plate 2 in a predetermined circuit shape and joined. Here, the circuit shape means the shape of the contact surface between the circuit metal plate 1 and the insulating plate 2. The heat dissipating metal plate 3 uses the heat dissipating metal plates 3a, 3b, 3c formed in substantially the same shape as the circuit metal plates 1a, 1b, 1c, and the circuit metal plates 1a, 1b, 1c is arranged on the back surface of the insulating plate 2 on the back surface of the insulating plate 2 so as to be substantially symmetrical with the surface of the insulating plate 2 and is joined to the brazing material.
【０００９】絶縁板２の材質は、アルミナ、窒化ケイ
素、窒化アルミなどのセラミック材が望ましく、使用す
る材質、用途により板厚ｔ２は決められるが、厚すぎる
と熱抵抗が大きくなり、薄すぎると耐久性がなくなるの
で、０．２〜１ｍｍ程度が適切であり、０．３ｍｍ〜
０．８ｍｍが好ましい。回路金属板１および放熱金属板
３の材質は、無酸素銅、タフピッチ銅、リン酸銅などの
銅を用いるのが一般的であるが、ニッケル、クロム、ア
ルミ等の金属やこれらの合金を用いることができる。ま
た、熱膨張係数がほぼ同一であることが望ましく、同質
材とする方がよい。回路金属板１の板厚ｔ１は金属回路
を流れる電流の大きさや、搭載される半導体の発熱量等
に応じて、０．２〜２ｍｍ程度までが選択される。放熱
金属板３の板厚ｔ３は回路金属板１で発生した熱ひずみ
にバランスさせる範囲で設定され、回路金属板１の板厚
ｔ１に対し７０％〜１１０％程度とするとよいが、薄い
方が好ましい。The material of the insulating plate 2 is preferably a ceramic material such as alumina, silicon nitride, or aluminum nitride. The thickness t2 is determined depending on the material to be used and the intended use. Since durability is lost, about 0.2 to 1 mm is appropriate, and 0.3 mm to
0.8 mm is preferred. As a material of the circuit metal plate 1 and the heat radiation metal plate 3, copper such as oxygen-free copper, tough pitch copper, and copper phosphate is generally used, but metals such as nickel, chromium, and aluminum and alloys thereof are used. be able to. Further, it is desirable that the thermal expansion coefficients are substantially the same, and it is better to use the same material. The thickness t1 of the circuit metal plate 1 is selected from about 0.2 to 2 mm depending on the magnitude of the current flowing through the metal circuit, the amount of heat generated by the mounted semiconductor, and the like. The thickness t3 of the heat dissipating metal plate 3 is set within a range that balances the thermal strain generated in the circuit metal plate 1, and is preferably about 70% to 110% with respect to the plate thickness t1 of the circuit metal plate 1. preferable.
【００１０】なお、回路金属板１と放熱金属板３を、同
材質、同厚さ、同形状とすると、各回路金属板１ａ、１
ｂ、１ｃの製造過程で放熱金属板３ａ、３ｂ、３ｃも一
気に形成することができるので、製作面では簡潔となり
好ましい。また、前述したように、回路金属板１を分割
して形成して回路パターンに接合する方法に限らず、絶
縁板２とほぼ同じ大きさの回路金属板１と放熱金属板３
を、絶縁板２の両面に接合した後、エッチング等で回路
パターンを形成するようにしてもよく、この場合両面を
同じパターンでエッチングすればよい。また、本基板
は、回路基板に用いるだけでなく、放熱基板としても用
いることができる。When the circuit metal plate 1 and the heat radiation metal plate 3 are made of the same material, the same thickness, and the same shape, each of the circuit metal plates 1a, 1
Since the heat dissipating metal plates 3a, 3b, 3c can be formed at a stroke in the manufacturing process of b, 1c, the manufacturing is simple and preferable. Further, as described above, the method is not limited to the method of dividing the circuit metal plate 1 and forming the circuit metal plate 1 and joining it to the circuit pattern.
May be bonded to both surfaces of the insulating plate 2 and then a circuit pattern may be formed by etching or the like. In this case, both surfaces may be etched with the same pattern. Further, the present board can be used not only as a circuit board but also as a heat dissipation board.
【００１１】[0011]
【実施例】以下、本発明の実施例について説明する。絶
縁板２として、５０ｍｍ×６０ｍｍの長方形で厚さ０．
６ｍｍの窒化ケイ素を使用した。熱膨張係数は３．０ｐ
ｐｍ／Ｋ、ヤング率は３００ＧＰａである。絶縁板２の
表裏の両面に面対称に、Ｔｉを配合した活性金属を添加
した銀−銅系のろう材ペーストをスクリーン印刷で回路
パターン通りに塗布し乾燥した。なお、回路パターン
は、絶縁板２の外周に２ｍｍ幅の隙間と、回路間に３ｍ
ｍ幅の隙間ができるような形状とした。Embodiments of the present invention will be described below. The insulating plate 2 is a rectangle of 50 mm × 60 mm and has a thickness of 0.1 mm.
6 mm silicon nitride was used. Thermal expansion coefficient is 3.0p
pm / K and Young's modulus are 300 GPa. A silver-copper-based brazing material paste to which an active metal containing Ti was added was applied according to a circuit pattern in a plane-symmetric manner on both surfaces of the insulating plate 2 by screen printing and dried. The circuit pattern has a gap of 2 mm on the outer periphery of the insulating plate 2 and 3 m between the circuits.
The shape was such that a gap of m width was formed.
【００１２】回路金属板１と放熱金属板３には、厚さ１
ｍｍのタフピッチ銅を用い、図１に示すような回路パタ
ーン形状に各々別体に形成した。熱膨張係数は１６．５
ｐｐｍ／Ｋ、ヤング率は１２３ＧＰａである。形成した
各回路金属板１と放熱金属板３を、ろう材を塗布した絶
縁板２の両面に所定位置になるように配設し、５５０℃
に加熱して接合した。冷却後の残留応力を算出したとこ
ろ、回路金属板１と絶縁板２の接合部エッジで曲げ応力
が高く、３９０ＭＰａであった。窒化ケイ素の曲げ強度
は７００ＭＰａ程度以上であり、クラック発生防止に対
して余裕があるといえる。The circuit metal plate 1 and the heat radiating metal plate 3 have a thickness of 1 mm.
mm tough pitch copper, and each was separately formed in a circuit pattern shape as shown in FIG. The coefficient of thermal expansion is 16.5
ppm / K, Young's modulus is 123 GPa. The formed circuit metal plate 1 and the radiating metal plate 3 are arranged on both surfaces of the insulating plate 2 coated with the brazing material so as to be at predetermined positions.
And heated for bonding. When the residual stress after cooling was calculated, the bending stress was high at the joint portion edge between the circuit metal plate 1 and the insulating plate 2 and was 390 MPa. Since the bending strength of silicon nitride is about 700 MPa or more, it can be said that there is room for preventing cracks.
【００１３】[0013]
【比較例】また比較例として、放熱金属板３として、厚
さ１ｍｍで、４６×５６ｍｍの１枚板の長方形状のタフ
ピッチ銅板が、絶縁板の外周から２ｍｍ内側に接合され
た回路基板を用意した。比較例は、放熱金属板３の大き
さと、これを接合するための絶縁板２の裏面に塗布した
ろう材の形状以外は実施例と同様にして製作した。比較
例について、冷却後の回路金属板１と絶縁板２の接合部
エッジにおける曲げ応力を実施例と同様に算出したとこ
ろ６００ＭＰａであった。窒化ケイ素の曲げ強度より小
さいとはいえ、あまり余裕がなく、実施例の有効性が確
認できた。COMPARATIVE EXAMPLE As a comparative example, a circuit board was prepared as a heat-dissipating metal plate 3 in which a rectangular tough pitch copper plate having a thickness of 1 mm and a size of 46 × 56 mm was joined 2 mm inward from the outer periphery of the insulating plate. did. The comparative example was manufactured in the same manner as the example except for the size of the heat radiation metal plate 3 and the shape of the brazing material applied to the back surface of the insulating plate 2 for joining the metal plate. For the comparative example, the bending stress at the joint edge between the circuit metal plate 1 and the insulating plate 2 after cooling was calculated in the same manner as in the example, and was 600 MPa. Although it was smaller than the bending strength of silicon nitride, there was not much room, and the effectiveness of the example was confirmed.
【００１４】[0014]
【発明の効果】以上説明したように、金属板の表面に孔
等の加工を行う必要のない簡潔な製法で、熱膨張差に起
因する曲げ応力の発生が小さい基板を製造することがで
きるため、絶縁板のクラックや金属板の剥離がほとんど
発生しない基板を、製品仕様が変っても安定して信頼性
高く供給することができる。As described above, it is possible to manufacture a substrate in which the occurrence of bending stress due to a difference in thermal expansion is small by a simple manufacturing method which does not require processing of holes or the like on the surface of a metal plate. In addition, a substrate that hardly causes cracks in an insulating plate or peeling of a metal plate can be supplied stably and with high reliability even if the product specifications change.
【図１】本発明の基板の実施の形態の一例を示す図FIG. 1 is a diagram showing an example of an embodiment of a substrate of the present invention.
【図２】従来の基板の一例を示す図FIG. 2 shows an example of a conventional substrate.
１ 絶縁板 ２ 回路金属板 ３ 放熱金属板 DESCRIPTION OF SYMBOLS 1 Insulation board 2 Circuit metal board 3 Heat dissipation metal board
Claims (5)
板において、 絶縁板の表側は、互いに電気的に絶縁されて配設された
複数の金属板を有し、 絶縁板の裏側は、表側の金属板と略同一形状で絶縁板を
挟んで略面対称に配設さた複数の金属板を有しているこ
とを特徴とする基板。1. A substrate in which a metal plate is joined to the front and back surfaces of an insulating plate, wherein the front side of the insulating plate has a plurality of metal plates arranged electrically insulated from each other, and the back side of the insulating plate has A substrate having a plurality of metal plates having substantially the same shape as the metal plate on the front side and arranged substantially in plane symmetry with an insulating plate interposed therebetween.
数は、略同一である請求項１記載の基板。2. The substrate according to claim 1, wherein the front metal plate and the rear metal plate have substantially the same coefficient of thermal expansion.
略同一である請求項１又は２記載の基板。3. The thickness of the front side metal plate and the back side metal plate is as follows:
3. The substrate according to claim 1, which is substantially the same.
属板は放熱用であり、回路基板として用いる請求項１、
２又は３記載の基板。4. The metal plate on the front side is used for a metal circuit, and the metal plate on the back side is used for heat radiation and used as a circuit board.
4. The substrate according to 2 or 3.
基板として用いる請求項１、２又は３記載の基板。5. The substrate according to claim 1, wherein the front and rear metal plates are used for heat radiation and used as a heat radiation substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001146286A JP2002343911A (en) | 2001-05-16 | 2001-05-16 | Substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001146286A JP2002343911A (en) | 2001-05-16 | 2001-05-16 | Substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002343911A true JP2002343911A (en) | 2002-11-29 |
Family
ID=18991963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001146286A Pending JP2002343911A (en) | 2001-05-16 | 2001-05-16 | Substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002343911A (en) |
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| JP2004356625A (en) * | 2003-05-06 | 2004-12-16 | Fuji Electric Device Technology Co Ltd | Semiconductor device and method for manufacturing the same |
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| JP2004356625A (en) * | 2003-05-06 | 2004-12-16 | Fuji Electric Device Technology Co Ltd | Semiconductor device and method for manufacturing the same |
| US9214617B2 (en) | 2006-03-08 | 2015-12-15 | Kabushiki Kaisha Toshiba | Electronic component module |
| JPWO2007105361A1 (en) * | 2006-03-08 | 2009-07-30 | 株式会社東芝 | Electronic component module |
| JP2013048294A (en) * | 2006-03-08 | 2013-03-07 | Toshiba Corp | Electronic component module |
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| JP2009158502A (en) * | 2007-12-25 | 2009-07-16 | Toyota Motor Corp | Semiconductor module |
| JP2011176299A (en) * | 2010-01-27 | 2011-09-08 | Kyocera Corp | Circuit board and electronic equipment using the same |
| JP2014090016A (en) * | 2012-10-29 | 2014-05-15 | Fuji Electric Co Ltd | Power semiconductor module |
| DE102014101926A1 (en) * | 2014-02-17 | 2015-05-07 | Semikron Elektronik Gmbh & Co. Kg | The power semiconductor module |
| JP2017041565A (en) * | 2015-08-20 | 2017-02-23 | 日産自動車株式会社 | Semiconductor device |
| JP2017069275A (en) * | 2015-09-28 | 2017-04-06 | 三菱マテリアル株式会社 | Substrate for power module with radiator plate, and power module |
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| JP7424026B2 (en) | 2019-12-13 | 2024-01-30 | 三菱マテリアル株式会社 | insulated circuit board |
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