JP2002313585A - Organic led and method of manufacturing it - Google Patents
Organic led and method of manufacturing itInfo
- Publication number
- JP2002313585A JP2002313585A JP2001118456A JP2001118456A JP2002313585A JP 2002313585 A JP2002313585 A JP 2002313585A JP 2001118456 A JP2001118456 A JP 2001118456A JP 2001118456 A JP2001118456 A JP 2001118456A JP 2002313585 A JP2002313585 A JP 2002313585A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- organic led
- electrode
- light emitting
- organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 238000000034 method Methods 0.000 claims description 18
- 230000005525 hole transport Effects 0.000 claims description 12
- 238000002347 injection Methods 0.000 claims description 10
- 239000007924 injection Substances 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 241
- 239000000758 substrate Substances 0.000 description 32
- 239000000463 material Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- 101100321669 Fagopyrum esculentum FA02 gene Proteins 0.000 description 1
- 229910006561 Li—F Inorganic materials 0.000 description 1
- UIVAMNQQNWQKIC-UHFFFAOYSA-N N-butyl-N,2-diphenylaniline Chemical group C=1C=CC=C(C=2C=CC=CC=2)C=1N(CCCC)C1=CC=CC=C1 UIVAMNQQNWQKIC-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- -1 and Mg-A g Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、光源やディスプレ
イなどに用いられる有機ＬＥＤ発光素子およびその製造
方法に関する。[0001] 1. Field of the Invention [0002] The present invention relates to an organic LED light emitting device used for a light source, a display, and the like, and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】近年、情報社会が進展する中、薄型、軽
量、低消費電力なディスプレイに対する要望が高まって
いる。特に、自発光で高輝度、高発光効率という特性を
もつ有機ＥＬについては、薄型、軽量、広視野角という
理想的な平面ディスプレイが実現できる有力な候補とし
て注目を集めている。最近、高精細な有機ＥＬディスプ
レイを製造する方法として、レーザー光を用いた熱転写
により有機ＬＥＤ層または有機ＬＥＤ層と第二電極を形
成する方法が提案された（例えば、特開平１１−２６０
５４９号公報参照）。2. Description of the Related Art In recent years, with the progress of the information society, there has been an increasing demand for thin, lightweight, and low power consumption displays. In particular, organic EL, which is self-luminous and has high luminance and high luminous efficiency, has attracted attention as a promising candidate for realizing an ideal flat display having a thin, lightweight, and wide viewing angle. Recently, as a method of manufacturing a high-definition organic EL display, a method of forming an organic LED layer or an organic LED layer and a second electrode by thermal transfer using a laser beam has been proposed (for example, Japanese Patent Application Laid-Open No. 11-260).
No. 549).
【０００３】図９〜１１は、このような従来の熱転写に
よる有機ＬＥＤ層の形成工程を示す概略断面図である。
まず、ストライプ状にパターン化された第１電極２を形
成した基板１を用意する。第１電極２は、スパッタ、Ｅ
Ｂ蒸着、抵抗加熱蒸着などのドライプロセス、印刷法、
インクジェット法などのウエットプロセスのいずれかの
公知の方法により形成することができる（図９
（ａ））。FIGS. 9 to 11 are schematic sectional views showing steps of forming an organic LED layer by such conventional thermal transfer.
First, a substrate 1 on which a first electrode 2 patterned in a stripe pattern is formed is prepared. The first electrode 2 is formed by sputtering, E
Dry process such as B evaporation, resistance heating evaporation, printing method,
It can be formed by any known method of a wet process such as an inkjet method (FIG. 9).
(A)).
【０００４】次に、熱転写シート１９上に蒸着法または
スピンコート法により有機ＬＥＤ層３を形成した転写フ
ィルム２０を用意し、これを基板１上の第１電極２の表
面に接するように配置する。その後、レーザー光１８を
その照射幅が第１電極２の幅になるように照射する（図
９（ｂ））。次いで、熱転写シート１９を剥離し、有機
ＬＥＤ層３を転写する（図９（ｃ））Next, a transfer film 20 having an organic LED layer 3 formed on a thermal transfer sheet 19 by vapor deposition or spin coating is prepared, and is arranged so as to be in contact with the surface of the first electrode 2 on the substrate 1. . After that, the laser beam 18 is irradiated so that the irradiation width becomes the width of the first electrode 2 (FIG. 9B). Next, the thermal transfer sheet 19 is peeled off, and the organic LED layer 3 is transferred (FIG. 9C).
【０００５】次に、有機ＬＥＤ層３の転写と同様にし
て、熱転写シート１９上に有機ＬＥＤ層４を形成した転
写フィルム２０を、第１電極２上に配置し、レーザー光
１８を照射する（図１０（ｄ））。図１０（ｄ）では、
転写フィルム２０の有機ＬＥＤ層４を第１電極２に密着
させていないが、完全に密着させてもよい。一般的に、
これらを密着させたほうが、転写がより確実になるので
好ましい。次いで、熱転写シート１９を剥離し、有機Ｌ
ＥＤ層４を転写する（図１０（ｅ））Next, in the same manner as the transfer of the organic LED layer 3, the transfer film 20 having the organic LED layer 4 formed on the thermal transfer sheet 19 is arranged on the first electrode 2 and irradiated with the laser beam 18 ( FIG. 10 (d)). In FIG. 10D,
The organic LED layer 4 of the transfer film 20 is not adhered to the first electrode 2, but may be adhered completely. Typically,
It is preferable that these are adhered to each other because the transfer becomes more reliable. Next, the thermal transfer sheet 19 is peeled off, and the organic L
Transfer the ED layer 4 (FIG. 10E)
【０００６】次に、有機ＬＥＤ層３の転写と同様にし
て、熱転写シート１９上に有機ＬＥＤ層５を形成した転
写フィルム２０を、第１電極２上に配置し、レーザー光
１８を照射する（図１０（ｆ））。その後、熱転写シー
ト１９を剥離し、有機ＬＥＤ層５を転写する（図１０
（ｇ））以上のように有機ＬＥＤ層を形成した後に、公
知の方法により第二電極６を形成すると、図１２に示す
ような従来の熱転写で製造された有機ＬＥＤ発光素子が
実現する。図１２において、１は基板、２は第１電極、
３，４、および５は有機ＬＥＤ層、６は第二電極であ
る。Next, in the same manner as in the transfer of the organic LED layer 3, the transfer film 20 having the organic LED layer 5 formed on the thermal transfer sheet 19 is arranged on the first electrode 2 and irradiated with the laser beam 18 ( FIG. 10 (f)). Thereafter, the thermal transfer sheet 19 is peeled off, and the organic LED layer 5 is transferred (FIG. 10).
(G)) After forming the organic LED layer as described above, if the second electrode 6 is formed by a known method, an organic LED light emitting device manufactured by conventional thermal transfer as shown in FIG. 12 is realized. In FIG. 12, 1 is a substrate, 2 is a first electrode,
3, 4, and 5 are organic LED layers, and 6 is a second electrode.
【０００７】この方法では、レーザー光１８を数十μｍ
まで集光させることができるので、高精細なディスプレ
イが実現できる。また、有機ＬＥＤ層３、４および５に
各々赤色、緑色、青色に発光する材料を用いることで、
レーザー光を用いた熱転写によりフルカラー有機ＬＥＤ
ディスプレイが実現できる。In this method, the laser beam 18 is set to several tens μm.
Since it is possible to collect light, a high-definition display can be realized. In addition, by using materials that emit red, green, and blue light for the organic LED layers 3, 4, and 5, respectively,
Full color organic LED by thermal transfer using laser light
A display can be realized.
【０００８】しかしながら、レーザー光を用いた熱転写
により有機ＬＥＤ層または有機ＬＥＤ層と第２電極を形
成する場合には、レーザー光の強度が変動することによ
り、図１３に示すように形成される有機ＬＥＤ層または
有機ＬＥＤ層と第２電極の幅が変動し、第１電極上に有
機ＬＥＤ層または有機ＬＥＤ層と第２電極が形成されて
いない領域が生じることがある。図１３における図番は
図１２と同様である。上記のような領域が生じることに
より、第１電極と第２電極間でリークが生じて有機ＬＥ
Ｄ発光素子が発光しなくなったり、発光面積が変動した
りして、発光の斑（むら）が生じ、表示品質が著しく悪
くなるという問題があった。However, when the organic LED layer or the organic LED layer and the second electrode are formed by thermal transfer using laser light, the intensity of the laser light fluctuates and the organic light emitting layer formed as shown in FIG. The width of the LED layer or the organic LED layer and the second electrode may fluctuate, and a region where the organic LED layer or the organic LED layer and the second electrode are not formed on the first electrode may occur. 13 are the same as those in FIG. The occurrence of the above-described region causes a leak between the first electrode and the second electrode, and the organic LE
There is a problem in that the D light emitting element stops emitting light or the light emitting area fluctuates, thereby causing unevenness of light emission (unevenness), thereby significantly deteriorating display quality.
【０００９】[0009]
【発明が解決しようとする課題】本発明は、第１電極と
第２電極間のリークを防いで、発光むらのない有機ＬＥ
Ｄ発光素子を提供すること、および低消費電力で、表示
品位の良好なアクティブ駆動型のフルカラーディスプレ
イを提供することを課題とする。SUMMARY OF THE INVENTION The present invention is directed to an organic LE which prevents leakage between a first electrode and a second electrode and has uniform light emission.
It is an object to provide a D light emitting element and to provide an active drive type full color display with low power consumption and good display quality.
【００１０】[0010]
【課題を解決するための手段】本発明者はかかる観点か
ら鋭意研究を行った結果、転写法を用いた有機ＬＥＤ発
光素子において、第１電極間に複数の有機ＬＥＤ層また
は複数の有機ＬＥＤ層／第２電極を端部において部分的
に重ねて形成することにより、第１電極と第２電極間の
リークを防ぐことができ、発光むらのない有機ＬＥＤ発
光素子が得られることを見出し、本発明を完成するに到
った。Means for Solving the Problems The inventor of the present invention has made intensive studies from such a viewpoint, and as a result, in an organic LED light emitting device using a transfer method, a plurality of organic LED layers or a plurality of organic LED layers are provided between first electrodes. / By forming the second electrode partially overlapping at the end, it was possible to prevent leakage between the first electrode and the second electrode, and to obtain an organic LED light emitting element without uneven light emission. The invention has been completed.
【００１１】かくして、本発明によれば、パターン化さ
れた第１電極間に絶縁膜を介するか、介さずして形成さ
れた少なくとも第１層と第２層からなる有機ＬＥＤ層お
よびその上部に形成された第２電極とからなる有機ＬＥ
Ｄ発光素子であって、第１層と第２層の隣接する端部
が、第１電極間の位置上において部分的に重なって形成
されていることを特徴とする有機ＬＥＤ発光素子が提供
される。Thus, according to the present invention, an organic LED layer consisting of at least a first layer and a second layer formed with or without an insulating film between the patterned first electrodes and an upper portion thereof are formed. Organic LE comprising the formed second electrode
An organic LED light emitting device is provided, wherein the light emitting device is a D light emitting device, wherein adjacent ends of the first layer and the second layer are partially overlapped on a position between the first electrodes. You.
【００１２】また、本発明によれば、（１）上記の有機
ＬＥＤ発光素子を製造するにあたり、パターン化された
第１電極上および第１電極間に渡って、有機ＬＥＤ層ま
たは有機ＬＥＤ層／第２電極が熱転写されるようにレー
ザー光を照射して、有機ＬＥＤ層または有機ＬＥＤ層／
第２電極を形成することを特徴とする有機ＬＥＤ発光素
子の製造方法（以下、「製造方法（１）」と称する）、
および（２）上記の有機ＬＥＤ発光素子を製造するにあ
たり、パターン化された第１電極上と第１電極間および
第１電極のエッジ部分を含む一部領域に渡って形成され
た絶縁膜に渡って、有機ＬＥＤ層または有機ＬＥＤ層／
第２電極が熱転写されるようにレーザー光を照射して、
有機ＬＥＤ層または有機ＬＥＤ層／第２電極を形成する
ことを特徴とする有機ＬＥＤ発光素子の製造方法（以
下、「製造方法（２）」と称する）が提供される。Further, according to the present invention, (1) in manufacturing the above-mentioned organic LED light-emitting device, an organic LED layer or an organic LED layer is formed on and between the first electrodes patterned. Irradiating a laser beam so that the second electrode is thermally transferred, the organic LED layer or the organic LED layer /
A method for producing an organic LED light-emitting element, wherein a second electrode is formed (hereinafter referred to as “production method (1)”);
And (2) when manufacturing the above-mentioned organic LED light emitting element, the insulating layer is formed over the patterned first electrodes, between the first electrodes, and over a part of the region including the edge portion of the first electrode. The organic LED layer or the organic LED layer /
Irradiating a laser beam so that the second electrode is thermally transferred,
There is provided a method of manufacturing an organic LED light-emitting element, which comprises forming an organic LED layer or an organic LED layer / second electrode (hereinafter, referred to as “manufacturing method (2)”).
【００１３】[0013]
【発明の実施の形態】本発明の有機ＬＥＤ発光素子は、
パターン化された第１電極間に絶縁膜を介するか、介さ
ずして形成された少なくとも第１層と第２層からなる有
機ＬＥＤ層およびその上部に形成された第２電極とから
なる有機ＬＥＤ発光素子であって、第１層と第２層の隣
接する端部が、第１電極間の位置上において部分的に重
なって形成されていることを特徴とする。また、本発明
の有機ＬＥＤ発光素子は、第１層上の全面に第２電極が
形成され、第２層上の全面に第２電極が形成され、第１
層と第２層の隣接する端部の部分的に重なっている領域
が、第１層の側部と第１層上に存在する第２電極上とに
存在していてもよい。BEST MODE FOR CARRYING OUT THE INVENTION The organic LED light emitting device of the present invention comprises:
An organic LED comprising at least an organic LED layer composed of at least a first layer and a second layer formed with or without an insulating film between first patterned electrodes and a second electrode formed thereon. A light-emitting element, wherein adjacent ends of the first layer and the second layer partially overlap each other at positions between the first electrodes. Further, in the organic LED light emitting device of the present invention, the second electrode is formed on the entire surface on the first layer, and the second electrode is formed on the entire surface on the second layer.
A partially overlapping region of the layer and the adjacent end of the second layer may be present on a side of the first layer and on a second electrode present on the first layer.
【００１４】本発明の有機ＬＥＤ発光素子は、絶縁膜の
介在の有無、および有機ＬＥＤ層と第２電極との積層関
係から基本的に４つの構成に分けられる。これらの各構
成を、実施の形態として図を用いて具体的に説明する
が、これらの説明により本発明が限定されるものではな
い。The organic LED light-emitting device of the present invention is basically divided into four configurations depending on the presence or absence of an insulating film and the lamination relationship between the organic LED layer and the second electrode. Each of these configurations will be specifically described as an embodiment with reference to the drawings, but the description is not intended to limit the present invention.
【００１５】（実施形態１）絶縁膜を介さずに有機ＬＥ
Ｄ層が形成され、第１層上に直接、第２層が形成されて
いる場合、すなわち、パターン化された第１電極間に複
数の有機ＬＥＤ層が端部において部分的に重なって形成
されている領域を含む場合（以下「発光素子（１）」と
称する）について説明する。図１は、発光素子（１）の
概略断面図である。(Embodiment 1) Organic LE without interposing an insulating film
When the D layer is formed and the second layer is formed directly on the first layer, that is, a plurality of organic LED layers are formed so as to partially overlap at the end between the patterned first electrodes. (Hereinafter referred to as “light-emitting element (1)”) will be described. FIG. 1 is a schematic sectional view of the light emitting device (1).
【００１６】図１では、基板１上に、膜厚５０〜４００
ｎｍ程度の第１電極２が幅１〜１８０μｍ程度、ピッチ
５〜２００μｍ程度のストライプ状に形成されている。
さらに第１電極２の上には、有機ＬＥＤ層３、４および
５が形成されているが、この第１電極２が形成されてい
ない領域７（第１電極２のピッチに相当する）では、有
機ＬＥＤ層が重なり合っている。領域７の幅は１〜２０
０μｍ程度である。さらに有機ＬＥＤ層上には、膜厚５
０〜４００ｎｍ程度の第２電極６が形成されている。In FIG. 1, a film thickness of 50 to 400
The first electrode 2 of about nm is formed in a stripe shape having a width of about 1 to 180 μm and a pitch of about 5 to 200 μm.
Further, the organic LED layers 3, 4 and 5 are formed on the first electrode 2, but in a region 7 where the first electrode 2 is not formed (corresponding to the pitch of the first electrode 2), The organic LED layers are overlapping. The width of the region 7 is 1 to 20
It is about 0 μm. Further, on the organic LED layer, a film thickness of 5
The second electrode 6 having a thickness of about 0 to 400 nm is formed.
【００１７】基板の材質としては、石英、ガラス、ポリ
カーボネートやポリイミドなどのプラスチックなどいず
れも用いることができ、特にこれらに限定されない。基
板上に透明電極を形成して、基板側から発光を取り出す
場合には、基板は透明であることが望ましい。As the material of the substrate, any of quartz, glass, plastic such as polycarbonate and polyimide can be used, and it is not particularly limited to these. When a transparent electrode is formed on a substrate and light is extracted from the substrate side, the substrate is desirably transparent.
【００１８】第１電極と第２電極の材質は、有機ＬＥＤ
発光素子の構成により選定される。すなわち、有機ＬＥ
Ｄ発光素子において、基板が透明基板で、かつ基板上の
第１電極が透明電極である場合には、有機ＬＥＤ層から
の発光が基板側から放出されるので、発光効率を高める
ために、第２電極を反射電極とするか、もしくは第２電
極の有機層と隣接しない面に反射膜を設けるのが好まし
い。逆に、第２電極が透明電極である場合には、有機Ｌ
ＥＤ層からの発光が第２電極側から放出されるので、第
１電極を反射電極とするか、もしくは第１電極と基板と
の間に反射膜を設けるのが好ましい。このような有機Ｌ
ＥＤ発光素子の構成に関して、前者を順積層構成とい
い、後者を逆積層構成という。The material of the first electrode and the second electrode is an organic LED
It is selected according to the configuration of the light emitting element. That is, the organic LE
In the case of the D light emitting device, when the substrate is a transparent substrate and the first electrode on the substrate is a transparent electrode, light emission from the organic LED layer is emitted from the substrate side. It is preferable to use the two electrodes as reflective electrodes, or to provide a reflective film on a surface of the second electrode that is not adjacent to the organic layer. Conversely, when the second electrode is a transparent electrode, the organic L
Since light emitted from the ED layer is emitted from the second electrode side, it is preferable to use the first electrode as a reflective electrode or to provide a reflective film between the first electrode and the substrate. Such organic L
Regarding the configuration of the ED light emitting element, the former is called a forward lamination structure, and the latter is called a reverse lamination structure.
【００１９】有機ＬＥＤ発光素子が順積層構成の場合に
は、一般に透明基板上に第１電極（陽極）として透明電
極が形成される。陽極としては、ホール注入に有効な仕
事関数の大きい（４ｅＶ以上）材質のものが好ましく、
例えば、ＩＴＯ（酸化インジウム錫）、Ａｕなどが挙げ
られる。中でもパターン加工に優れている点でＩＴＯが
特に好ましい。また、有機ＬＥＤ層上には、第２電極
（陰極）が形成される。陰極としては、電子注入に有効
な仕事関数の小さい（４ｅＶ以下）材質のものが好まし
く、例えば、Ａｌ、Ｍｇ、Ａｇなどの金属、Ｍｇ−Ａ
ｇ、Ａｌ−Ｌｉ、Ｌｉ−Ｆなどの合金が挙げられる。各
電極の膜厚は通常、１〜２０００ｎｍ程度である。ま
た、第２電極と有機ＬＥＤ層との間には、膜厚０．１〜
１００ｎｍ程度のＬｉＦ、ＳｉＯ2などの絶縁膜が形成
されていてもよい。In the case where the organic LED light-emitting elements have a sequentially laminated structure, a transparent electrode is generally formed as a first electrode (anode) on a transparent substrate. As the anode, a material having a large work function (4 eV or more) effective for hole injection is preferable.
For example, ITO (indium tin oxide), Au or the like can be used. Among them, ITO is particularly preferable in that it is excellent in pattern processing. Further, a second electrode (cathode) is formed on the organic LED layer. As the cathode, a material having a small work function (4 eV or less) effective for electron injection is preferable. For example, metals such as Al, Mg, and Ag, and Mg-A
g, Al-Li, Li-F and the like. The thickness of each electrode is usually about 1 to 2000 nm. The thickness between the second electrode and the organic LED layer is 0.1 to 0.1 mm.
An insulating film of about 100 nm such as LiF or SiO 2 may be formed.
【００２０】有機ＬＥＤ層を構成する層は、それぞれ発
光層ならびに任意にホール注入層、ホール輸送層および
電子輸送層から構成される。具体的には、発光層のみか
らなる単層構造、下記の組み合わせからなる多層構造
（第１電極側から）が挙げられるが、本発明はこれらに
より限定されない。 ホール輸送層／発光層、 ホール注入層／ホール輸送層／発光層、 ホール注入層／ホール輸送層／発光層／電子輸送層 各層の膜厚は通常、１〜５００ｎｍ程度である。The layers constituting the organic LED layer are each composed of a light emitting layer and optionally a hole injection layer, a hole transport layer and an electron transport layer. Specific examples include a single-layer structure composed of only the light-emitting layer and a multilayer structure (from the first electrode side) composed of the following combinations, but the present invention is not limited thereto. Hole transport layer / light-emitting layer, hole injection layer / hole transport layer / light-emitting layer, hole injection layer / hole transport layer / light-emitting layer / electron transport layer The thickness of each layer is usually about 1 to 500 nm.
【００２１】有機ＬＥＤ層を構成する材料は、有機ＬＥ
Ｄ用の公知の材料を用いることができる。例えば、特開
平３−１５２８９７号公報、特開平５−７０７７３号公
報、特開平５−１９８３７７号公報、特開平５−２１４
３３２号公報および特開平６−１７２７５１号公報に記
載されている材料が挙げられる。The material constituting the organic LED layer is an organic LE
Known materials for D can be used. For example, JP-A-3-152897, JP-A-5-70773, JP-A-5-198377, JP-A-5-214
332 and JP-A-6-172751.
【００２２】本発明によれば、第１電極が有機ＬＥＤ層
にホールを注入する陽極、第２電極が有機ＬＥＤ層に電
子を注入する陰極であり、有機ＬＥＤ層を構成する層
が、それぞれ発光層ならびに任意にホール注入層、ホー
ル輸送層および電子輸送層から構成される有機ＬＥＤ発
光素子、すなわち上記のような第１電極が有機ＬＥＤ層
にホールを注入する陽極、第２電極が有機ＬＥＤ層に電
子を注入する陰極であり、有機ＬＥＤ層が単層または多
層構造である有機ＬＥＤ発光素子が提供される。このよ
うな有機ＬＥＤ発光素子は、第１電極が透明電極であ
り、基板が透明であるので、基板側から非発光部分がな
く、発光の斑のない光を取出すことができるという作用
がある。According to the present invention, the first electrode is an anode for injecting holes into the organic LED layer, the second electrode is a cathode for injecting electrons into the organic LED layer, and the layers constituting the organic LED layer emit light. Organic light-emitting device comprising a layer and optionally a hole-injecting layer, a hole-transporting layer and an electron-transporting layer, ie an anode wherein the first electrode as described above injects holes into the organic LED layer, the second electrode being an organic LED layer An organic LED light-emitting element is provided, which is a cathode for injecting electrons into the organic LED and has a single-layer or multi-layer organic LED layer. Since the first electrode is a transparent electrode and the substrate is transparent, such an organic LED light-emitting element has an effect that there is no non-light emitting portion from the substrate side and light can be extracted without unevenness of light emission.
【００２３】他方、有機ＬＥＤ発光素子が逆積層構成の
場合には、一般に透明または透明でない基板上に第１電
極（陰極）が形成され、有機ＬＥＤ層上に透明な第２電
極（陽極）が形成される。陰極および陽極としては、前
記のものが挙げられる。また、第１電極と有機ＬＥＤ層
との間には、膜厚０．１〜１００ｎｍ程度のＬｉＦ、Ｓ
ｉＯ2などの絶縁膜が形成されていてもよい。On the other hand, when the organic LED light emitting element has a reverse laminated structure, a first electrode (cathode) is generally formed on a transparent or non-transparent substrate, and a transparent second electrode (anode) is formed on the organic LED layer. It is formed. Examples of the cathode and the anode include those described above. LiF, S having a thickness of about 0.1 to 100 nm is provided between the first electrode and the organic LED layer.
An insulating film such as iO 2 may be formed.
【００２４】有機ＬＥＤ層を構成する層は、それぞれ発
光層ならびに任意にホール注入層、ホール輸送層および
電子輸送層から構成される。具体的には、発光層のみか
らなる単層構造、下記の組み合わせからなる多層構造
（第２電極側から）が挙げられるが、本発明はこれらに
より限定されない。 ホール輸送層／発光層、 ホール注入層／ホール輸送層／発光層、 ホール注入層／ホール輸送層／発光層／電子輸送層 各層の膜厚は通常、１ｎｍ〜５００ｎｍである。有機Ｌ
ＥＤ層を構成する材料としては、前記のものが挙げられ
る。The layers constituting the organic LED layer are each composed of a light emitting layer and optionally a hole injection layer, a hole transport layer and an electron transport layer. Specific examples include a single-layer structure composed of only the light-emitting layer and a multilayer structure (from the second electrode side) composed of the following combinations, but the present invention is not limited thereto. Hole transport layer / light emitting layer, hole injection layer / hole transport layer / light emitting layer, hole injection layer / hole transport layer / light emitting layer / electron transport layer The thickness of each layer is usually 1 nm to 500 nm. Organic L
Examples of the material constituting the ED layer include those described above.
【００２５】本発明によれば、第２電極が有機ＬＥＤ層
にホールを注入する陽極、第１電極が有機ＬＥＤ層に電
子を注入する陰極であり、有機ＬＥＤ層を構成する層
が、それぞれ発光層ならびに任意にホール注入層、ホー
ル輸送層および電子輸送層から構成される有機ＬＥＤ発
光素子、すなわち上記のような第２電極が有機ＬＥＤ層
にホールを注入する陽極、第１電極が有機ＬＥＤ層に電
子を注入する陰極であり、有機ＬＥＤ層が単層または多
層構造である有機ＬＥＤ発光素子が提供される。このよ
うな有機ＬＥＤ発光素子は、第２電極が透明電極である
ので、第２電極側から非発光部分がなく、発光の斑のな
い光を取出すことができるという作用がある。According to the present invention, the second electrode is an anode for injecting holes into the organic LED layer, the first electrode is a cathode for injecting electrons into the organic LED layer, and the layers constituting the organic LED layer emit light. Organic light-emitting device comprising a layer and optionally a hole-injecting layer, a hole-transporting layer and an electron-transporting layer, ie an anode wherein the second electrode as described above injects holes into the organic LED layer, the first electrode being the organic LED layer An organic LED light-emitting element is provided, which is a cathode for injecting electrons into the organic LED and has a single-layer or multi-layer organic LED layer. Since the second electrode is a transparent electrode, such an organic LED light-emitting element has no non-light-emitting portion from the second electrode side, and has an effect of taking out light without unevenness of light emission.
【００２６】有機ＬＥＤ層は、レーザー光照射による熱
転写で、例えばストライプ状に形成される。図１を参照
すれば、まず有機ＬＥＤ層３が形成され、次に有機ＬＥ
Ｄ層４および有機ＬＥＤ層５が順次同様に形成される。
それぞれの有機ＬＥＤ層は、同じ材料でもよく、この場
合、発光は同一色になる。また、それぞれの有機ＬＥＤ
層は、異なっていてもよく、この場合、カラー表示が可
能となる。The organic LED layer is formed, for example, in a stripe shape by thermal transfer by laser light irradiation. Referring to FIG. 1, first, an organic LED layer 3 is formed, and then an organic LED layer 3 is formed.
The D layer 4 and the organic LED layer 5 are sequentially formed in the same manner.
Each organic LED layer may be of the same material, in which case the emission will be of the same color. In addition, each organic LED
The layers can be different, in which case a color display is possible.
【００２７】図１では、有機ＬＥＤ層３と有機ＬＥＤ層
４または有機ＬＥＤ層５が第１電極の形成されていない
領域７で重なっているが、本発明の構成では、このよう
に重なっている領域が部分的にあってもよい。本発明の
主旨は、第１電極２の上に、有機ＬＥＤ層が形成されな
い領域が生じることを防ぐ構成を提案することであり、
熱転写時のレーザー光の強度変動により、第１電極の形
成されていない領域７の上で部分的に有機ＬＥＤ層３と
有機ＬＥＤ層４または有機ＬＥＤ層５が離れていたり、
接していてもかまわない。このような構成により、有機
ＬＥＤ層３、４および５が、常に第１電極２を覆ってい
ることになるので、第１電極２と第２電極６との間のリ
ークがなくなり、均一な発光を得ることができる。In FIG. 1, the organic LED layer 3 and the organic LED layer 4 or the organic LED layer 5 overlap in the region 7 where the first electrode is not formed, but in the configuration of the present invention, they overlap in this manner. The region may be partially present. The gist of the present invention is to propose a configuration that prevents a region where an organic LED layer is not formed on the first electrode 2,
Due to the intensity fluctuation of the laser beam at the time of thermal transfer, the organic LED layer 3 and the organic LED layer 4 or the organic LED layer 5 are partially separated on the region 7 where the first electrode is not formed,
You may be in contact. With such a configuration, the organic LED layers 3, 4, and 5 always cover the first electrode 2, so that there is no leakage between the first electrode 2 and the second electrode 6, and uniform light emission. Can be obtained.
【００２８】第２電極を、蒸着法またはレーザー光照射
による熱転写法で、第１電極２に直交するように、適当
な間隔をあけてストライプ状に形成する。第１電極の１
本と第２電極の１本を選択し、両電極間に電圧を印加し
て電流を流すことで、選択した両電極間に挟まれた有機
ＬＥＤ層だけを発光させることができるので、パッシブ
駆動型のディスプレイが実現できる。The second electrodes are formed in stripes at appropriate intervals by a vapor deposition method or a thermal transfer method using laser beam irradiation so as to be orthogonal to the first electrodes 2. 1st electrode 1
By selecting one of the book and the second electrode and applying a voltage between the two electrodes to cause a current to flow, only the organic LED layer sandwiched between the selected two electrodes can emit light. Type display can be realized.
【００２９】このような発光素子（１）は、レーザー光
強度の変動によって図１３に示すような有機ＬＥＤ層ま
たは有機ＬＥＤ層と第２電極の幅の変動が生じても、第
１電極間の中で有機ＬＥＤ層の変動がおさまり、第１電
極上に有機ＬＥＤ層が形成されない領域が生じなくなる
ので第１電極と第２電極との間のリークがなくなるとい
う作用がある。Such a light emitting device (1) can be used even if the width of the organic LED layer or the organic LED layer and the second electrode fluctuate as shown in FIG. 13 due to the fluctuation of the laser beam intensity. In this case, the fluctuation of the organic LED layer is reduced, and a region where the organic LED layer is not formed on the first electrode is not generated. Therefore, there is an effect that the leakage between the first electrode and the second electrode is eliminated.
【００３０】（実施形態２）絶縁膜を介さずに有機ＬＥ
Ｄ層が形成され、第１層上に第２電極を介して第２層が
形成されている場合、すなわち、発光素子（２）は、熱
転写により複数の有機ＬＥＤ層／第２電極が形成された
有機ＬＥＤ発光素子において、パターン化された第１電
極間に複数の有機ＬＥＤ層／第２電極が端部において部
分的に重なって形成されている領域を含む場合（以下
「発光素子（２）」と称する）について説明する。図２
は、発光素子（２）の概略断面図である。(Embodiment 2) Organic LE without interposing an insulating film
When the D layer is formed and the second layer is formed on the first layer via the second electrode, that is, in the light emitting element (2), a plurality of organic LED layers / second electrodes are formed by thermal transfer. The organic LED light-emitting device includes a region in which a plurality of organic LED layers / second electrodes are partially overlapped at the end between the patterned first electrodes (hereinafter referred to as “light-emitting device (2) ) Will be described. FIG.
FIG. 2 is a schematic sectional view of a light emitting element (2).
【００３１】図２に示されるように、発光素子（１）と
比較して、有機ＬＥＤ層上に有機ＬＥＤ層と同じ幅かま
たはそれよりも狭い幅で第２電極が形成されている点が
異なっている。ただし、第２電極８、９および１０の幅
は、第１電極２の幅よりも広くなるように形成されてい
る。このような構成により、有機ＬＥＤ層３、４および
５ならびに第２電極８、９および１０が、常に第１電極
２を覆っていることになるので、従来のように有機ＬＥ
Ｄ層３、４よび５および第２電極８、９および１０の幅
が、第１電極２の幅よりも狭いことにより生じる発光む
らの問題がなくなり、むらのない発光が得られる。As shown in FIG. 2, the point that the second electrode is formed on the organic LED layer with the same width as or narrower than the organic LED layer as compared with the light emitting element (1). Is different. However, the width of the second electrodes 8, 9 and 10 is formed to be wider than the width of the first electrode 2. With such a configuration, the organic LED layers 3, 4, and 5, and the second electrodes 8, 9, and 10 always cover the first electrode 2, so that the organic LE
The problem of uneven light emission caused by the width of the D layers 3, 4, and 5 and the width of the second electrodes 8, 9, and 10 being smaller than the width of the first electrode 2 is eliminated, and uniform light emission is obtained.
【００３２】このような発光素子（２）は、レーザー光
強度の変動が生じても、第１電極間の中で有機ＬＥＤ層
および第２電極の幅の変動がおさまり、第１電極上に有
機ＬＥＤ層および第２電極が形成されない領域が生じな
くなるので、有機ＬＥＤ発光素子を発光させた場合、第
１電極のパターンに対応した発光が得られ、発光幅の変
動がなくなるという作用がある。In such a light emitting device (2), even if the laser light intensity fluctuates, the width of the organic LED layer and the width of the second electrode are reduced between the first electrodes, and the organic light emitting element is placed on the first electrode. Since an area where the LED layer and the second electrode are not formed does not occur, when the organic LED light emitting element emits light, light emission corresponding to the pattern of the first electrode is obtained, and there is an effect that the light emission width does not change.
【００３３】図７は、発光素子（２）の構成を、例えば
特開平７−１２２３６２号公報に開示されているような
アクティブマトリックス型の基板（図８）と組み合わせ
た場合の概略平面図である。図７は、有機ＬＥＤ層３、
４および５（図示しない）ならびに第２電極８、９およ
び１０（図示しない）は、データライン１１とコモンラ
イン１３とそれと直交して形成されるスキャンライン１
２に囲まれた領域（画素）に分離形成された第１電極２
の上に、データライン１１と平行にストライプ状に形成
される。また、通常は、データライン１１とコモンライ
ン１３とスイッチングＴＦＴ１５、駆動用ＴＦＴ１６お
よびコンデンサー１７の表面は、通常絶縁膜で覆われて
おり、第１電極表面上だけには絶縁膜（図示しない）が
形成されていない構成である。有機ＬＥＤ層３と有機Ｌ
ＥＤ層４または有機ＬＥＤ層５は、絶縁膜上で重なるよ
うに形成される。このような構成では、有機ＬＥＤ層
３、４および５ならびに第２電極８、９および１０は、
第１電極２を覆うように形成されるので、発光むらのな
い、表示品質の良好なアクティブ駆動型のディスプレイ
が実現できる。FIG. 7 is a schematic plan view when the structure of the light emitting element (2) is combined with an active matrix type substrate (FIG. 8) disclosed in, for example, Japanese Patent Application Laid-Open No. 7-122362. . FIG. 7 shows the organic LED layer 3,
4 and 5 (not shown) and second electrodes 8, 9 and 10 (not shown) are provided with a data line 11, a common line 13 and a scan line 1 formed orthogonally thereto.
First electrode 2 formed separately in a region (pixel) surrounded by
Is formed in a stripe shape in parallel with the data line 11. Normally, the surfaces of the data line 11, the common line 13, the switching TFT 15, the driving TFT 16, and the capacitor 17 are usually covered with an insulating film, and an insulating film (not shown) is formed only on the first electrode surface. The configuration is not formed. Organic LED layer 3 and organic L
The ED layer 4 or the organic LED layer 5 is formed so as to overlap on the insulating film. In such a configuration, the organic LED layers 3, 4 and 5 and the second electrodes 8, 9 and 10
Since it is formed so as to cover the first electrode 2, it is possible to realize an active drive type display having good display quality without uneven light emission.
【００３４】上記の構成の場合、第１電極が１画素内の
データライン１１とコモンライン１３とスイッチングＴ
ＦＴ１５、駆動用ＴＦＴ１６およびコンデンサー１７な
ど（アクティブ回路部品）の形成されていない領域に限
られるため、発光する有機ＬＥＤ層の領域も、ＴＦＴ素
子の数が多くなると、小さくなり、明るい表示が難しく
なったり、明るく発光させるためには、電力が大きくな
り、有機ＬＥＤ層の信頼性が低下する懸念がある。従
来、データライン１１、コモンライン１３、スイッチン
グＴＦＴ、駆動用ＴＦＴおよびコンデンサーなどを含む
回路部品が形成された後に、それらを覆うように絶縁膜
が設けられ、また、その絶縁膜にはスルーホールが設け
てあり、その絶縁膜上に形成した第１電極と上記駆動用
ＴＦＴを結合する配線を、スルーホールを通してなされ
るような構成のアクティブマトリックス基板が提案され
ている（図８）。In the case of the above configuration, the first electrode is connected to the data line 11, the common line 13 and the switching T
Since it is limited to the area where the FT 15, the driving TFT 16, the capacitor 17, and the like (active circuit components) are not formed, the area of the organic LED layer that emits light becomes smaller as the number of TFT elements increases, and it becomes difficult to perform bright display. In order to emit light brightly, there is a concern that the power is increased and the reliability of the organic LED layer is reduced. Conventionally, after circuit components including the data line 11, the common line 13, the switching TFT, the driving TFT, the capacitor, and the like are formed, an insulating film is provided so as to cover them, and a through hole is formed in the insulating film. There has been proposed an active matrix substrate having a configuration in which a wiring connecting the first electrode formed on the insulating film and the driving TFT is formed through a through hole (FIG. 8).
【００３５】この場合、絶縁膜上に形成される、第１電
極の大きさは、最大データライン１１とコモンライン１
３とそれと直交して形成されるスキャンライン１２に囲
まれた領域（画素）の大きさに形成できる。本発明で逆
積層の有機ＬＥＤ層を設けた構成であれば、アクティブ
回路部品に制限されることなく、第１電極を大きなサイ
ズに形成することができるので、有機ＬＥＤの発光面積
も大きくなり、より明るい表示が、低消費電力で得ら
れ、高信頼性も得ることができる。In this case, the size of the first electrode formed on the insulating film is the maximum data line 11 and the common line 1
3 and a region (pixel) surrounded by a scan line 12 formed orthogonally thereto. With the configuration in which the organic LED layers of the reverse stack are provided in the present invention, the first electrode can be formed in a large size without being limited to the active circuit components, so that the light emitting area of the organic LED also increases, Brighter display can be obtained with low power consumption and high reliability can be obtained.
【００３６】（実施形態３）絶縁膜を介して有機ＬＥＤ
層が形成され、第１層上に直接、第２層が形成されてい
る場合、すなわち、パターン化された第１電極上と第１
電極間および第１電極のエッジ部分を含む一部領域に渡
って形成された絶縁膜上に、熱転写により複数の有機Ｌ
ＥＤ層が形成された有機ＬＥＤ発光素子において、前記
絶縁膜上に複数の有機ＬＥＤ層が端部において部分的に
重なって形成されている領域を含む場合（以下「発光素
子（３）」と称する）について説明する。図３は、発光
素子（３）の概略断面図である。(Embodiment 3) Organic LED via insulating film
Layer is formed and the second layer is formed directly on the first layer, i.e., on the patterned first electrode and the first layer.
On the insulating film formed between the electrodes and over a partial region including the edge portion of the first electrode, a plurality of organic L
In the organic LED light emitting device having the ED layer formed thereon, a case where the insulating film includes a region in which a plurality of organic LED layers are partially overlapped at an end portion (hereinafter referred to as “light emitting device (3)”) ) Will be described. FIG. 3 is a schematic sectional view of the light emitting device (3).
【００３７】図３に示されるように、発光素子（１）と
比較して、第１電極２の間と第１電極２のエッジ部分に
渡って絶縁膜１４が形成されている点が異なっている。
絶縁膜としては、ＳｉＯ2、Ｓｉ3Ｎ4などの無機材料や
ポリイミドなどの有機材料が使用でき、その膜厚は無機
材料では５０〜５００ｎｍ程度、有機材料では０．５〜
５μｍ程度である。このような構成により、絶縁膜１４
が第１電極２のエッジ部分を覆っていることになるの
で、有機ＬＥＤ層の膜厚が薄い場合でも、エッジ部分で
第１電極２と第２電極６との間のリークが生じることが
なく、また、有機ＬＥＤ層３、４および５が、常に第１
電極２を覆っていることになるので、第１電極２と第２
電極６との間のリークがなくなり、均一な発光を得るこ
とができる。As shown in FIG. 3, as compared with the light emitting element (1), the difference is that an insulating film 14 is formed between the first electrodes 2 and over the edge portions of the first electrodes 2. I have.
As the insulating film, an inorganic material such as SiO 2 or Si 3 N 4 or an organic material such as polyimide can be used. The film thickness of the inorganic material is about 50 to 500 nm, and that of the organic material is 0.5 to 500 nm.
It is about 5 μm. With such a configuration, the insulating film 14
Covers the edge portion of the first electrode 2, even when the thickness of the organic LED layer is small, no leak occurs between the first electrode 2 and the second electrode 6 at the edge portion. And the organic LED layers 3, 4 and 5 are always the first
Since the first electrode 2 and the second electrode 2
Leakage between the electrodes 6 is eliminated, and uniform light emission can be obtained.
【００３８】このような発光素子（３）は、絶縁膜を形
成することで、第１電極のエッジ部で有機ＬＥＤ層が薄
くなり、部分的に第１電極と第２電極間でリークが生じ
ることを防ぐ作用がある。さらに、このような構成にす
ることで、レーザー光強度の変動が生じても、絶縁膜上
で有機ＬＥＤ層の幅の変動がおさまり、第１電極上に有
機ＬＥＤ層および第２電極膜が形成されない領域が生じ
なくなるので、有機ＬＥＤ発光素子を発光させた場合、
第１電極のパターンに対応した発光が得られ、発光幅が
変動するということがなくなるという作用がある。In such a light emitting element (3), by forming an insulating film, the organic LED layer becomes thinner at the edge of the first electrode, and a leak is partially generated between the first electrode and the second electrode. It has the effect of preventing that. Furthermore, with such a configuration, even if the laser beam intensity fluctuates, the fluctuation of the width of the organic LED layer on the insulating film is reduced, and the organic LED layer and the second electrode film are formed on the first electrode. When the organic LED light emitting device emits light,
Light emission corresponding to the pattern of the first electrode can be obtained, and the light emission width does not fluctuate.
【００３９】（実施形態４）絶縁膜を介して有機ＬＥＤ
層が形成され、第１層上に第２電極を介して第２層が形
成されている場合、すなわち、パターン化された第１電
極上と第１電極間および第１電極のエッジ部分を含む一
部領域に渡って形成された絶縁膜上に、熱転写により複
数の有機ＬＥＤ層／第２電極が形成された有機ＬＥＤ発
光素子において、前記絶縁膜上に複数の有機ＬＥＤ層／
第２電極が端部において部分的に重なって形成されてい
る領域を含む場合（以下「発光素子（４）」と称する）
について説明する。図４は、発光素子（４）の概略断面
図である。(Embodiment 4) Organic LED via insulating film
When the layer is formed and the second layer is formed on the first layer via the second electrode, that is, on the patterned first electrode and between the first electrode and including the edge portion of the first electrode In an organic LED light emitting device in which a plurality of organic LED layers / second electrodes are formed by thermal transfer on an insulating film formed over a partial region, a plurality of organic LED layers / second electrodes are formed on the insulating film.
A case where the second electrode includes a region partially overlapped at an end portion (hereinafter, referred to as “light emitting element (4)”)
Will be described. FIG. 4 is a schematic sectional view of the light emitting device (4).
【００４０】発光素子（４）は、発光素子（２）と比較
して、第１電極２の間と第１電極２のエッジ部分に渡っ
て絶縁膜１４が形成されている点が異なっている。絶縁
膜としては、ＳｉＯ2、Ｓｉ3Ｎ4などの無機材料やポリ
イミドなどの有機材料が使用でき、その膜厚は無機材料
では５０〜５００ｎｍ程度、有機材料では０．５〜５μ
ｍ程度である。このような構成により、絶縁膜が第１電
極のエッジ部分を覆っていることになるので、有機ＬＥ
Ｄ層の膜厚が薄い場合でも、エッジ部分で第１電極２と
第２電極６との間のリークが生じることがなく、また、
有機ＬＥＤ層３、４および５が、常に第１電極２を覆っ
ていることになるので、第１電極２と第２電極６との間
のリークがなくなり、均一な発光を得ることができる。The light emitting element (4) is different from the light emitting element (2) in that an insulating film 14 is formed between the first electrodes 2 and over the edge of the first electrode 2. . As the insulating film, an inorganic material such as SiO 2 or Si 3 N 4 or an organic material such as polyimide can be used. The film thickness of the inorganic material is about 50 to 500 nm, and that of the organic material is 0.5 to 5 μm.
m. With such a configuration, the insulating film covers the edge of the first electrode.
Even when the thickness of the D layer is small, no leak occurs between the first electrode 2 and the second electrode 6 at the edge portion, and
Since the organic LED layers 3, 4, and 5 always cover the first electrode 2, there is no leakage between the first electrode 2 and the second electrode 6, and uniform light emission can be obtained.
【００４１】このような発光素子（４）は、絶縁膜を形
成することで、第１電極のエッジ部で有機ＬＥＤ層が薄
くなり、部分的に第１電極と第２電極間でリークが生じ
ることを防ぐ作用がある。さらに、このような構成にす
ることで、レーザー光強度の変動が生じても、絶縁膜の
上で有機ＬＥＤ層および第２電極の幅の変動がおさま
り、第１電極上に有機ＬＥＤ層および第２電極が形成さ
れない領域が生じなくなるので、有機ＬＥＤ発光素子を
発光させた場合、絶縁膜に囲まれた第１電極に対応した
発光が得られ、発光幅が変動するということがなくなる
という作用がある。In such a light emitting device (4), by forming an insulating film, the organic LED layer is thinned at the edge of the first electrode, and a leak is partially generated between the first electrode and the second electrode. It has the effect of preventing that. Furthermore, with such a configuration, even if the laser light intensity fluctuates, the fluctuation of the width of the organic LED layer and the second electrode on the insulating film is reduced, and the organic LED layer and the second electrode are formed on the first electrode. Since the region where the two electrodes are not formed is not generated, when the organic LED light emitting device emits light, light emission corresponding to the first electrode surrounded by the insulating film is obtained, and the light emitting width does not change. is there.
【００４２】発光素子（４）についても、発光素子
（２）と同様にして、特開平７−１２２３６２号公報に
開示されているようなアクティブマトリックス型の基板
（図８）と組み合わせることにより、発光のむらのな
い、表示品質の良好なアクティブ駆動型のディスプレイ
が実現できる。Similarly to the light emitting element (2), the light emitting element (4) is combined with an active matrix type substrate (FIG. 8) disclosed in JP-A-7-122362 to emit light. An active drive type display with good display quality without unevenness can be realized.
【００４３】（実施形態５）製造方法（１）は、発光素
子（１）および発光素子（２）を製造するにあたり、パ
ターン化された第１電極上および第１電極間に渡って、
有機ＬＥＤ層または有機ＬＥＤ層／第２電極が熱転写さ
れるようにレーザー光を照射して、複数の有機ＬＥＤ層
または複数の有機ＬＥＤ層／第２電極を形成することを
特徴とする。この製造方法は、特開平１１−２６０５４
９号公報などに開示されている従来の熱転写による方法
（図９〜１１）に対して、レーザー光の照射領域を、第
１電極の幅よりも大きく、かつその照射領域が隣の第１
電極を含まないようにしたことを特徴としている。図５
（ａ）〜（ｃ）および図６（ｄ）、（ｅ）は、本発明の
有機ＬＥＤ発光素子の製造工程を示す概略断面図であ
る。(Embodiment 5) In the manufacturing method (1), the light emitting element (1) and the light emitting element (2) are manufactured on the patterned first electrode and between the first electrodes.
The method is characterized in that a plurality of organic LED layers or a plurality of organic LED layers / second electrodes are formed by irradiating a laser beam so that the organic LED layers or the organic LED layers / second electrodes are thermally transferred. This manufacturing method is disclosed in Japanese Patent Application Laid-Open No. H11-26054.
In contrast to the conventional method using thermal transfer disclosed in Japanese Patent Application Publication No. 9-No. 9 (FIGS. 9 to 11), the irradiation area of the laser beam is larger than the width of the first electrode, and the irradiation area is the first first electrode.
It is characterized by not including electrodes. FIG.
(A) to (c) and FIGS. 6 (d) and (e) are schematic cross-sectional views showing steps of manufacturing the organic LED light emitting device of the present invention.
【００４４】まず、有機ＬＥＤ層３を形成した熱転写シ
ート１９からなる転写フィルム２０と、パターン形成さ
れた第１電極２を設けた基板１とを、有機ＬＥＤ層３と
第１電極２とが接するように配置し、転写フィルム２０
側からレーザー光１８を、その照射領域が第１電極２の
幅よりも広く、かつその照射領域が隣の第１電極を含ま
ないように、照射する（図５（ａ））。次いで、熱転写
シート１９を剥離して、有機ＬＥＤ層３の転写を完了す
る。First, the transfer film 20 composed of the thermal transfer sheet 19 on which the organic LED layer 3 is formed and the substrate 1 provided with the patterned first electrode 2 are brought into contact with the organic LED layer 3 and the first electrode 2. And transfer film 20
The laser beam 18 is irradiated from the side such that the irradiation area is wider than the width of the first electrode 2 and the irradiation area does not include the adjacent first electrode (FIG. 5A). Next, the thermal transfer sheet 19 is peeled off, and the transfer of the organic LED layer 3 is completed.
【００４５】熱転写によって形成される第１電極２上を
覆う有機ＬＥＤ層の幅は、レーザー光強度が同じでも、
転写フィルムの厚みや構成される材料の熱伝導率により
変化するので、レーザー光の強度およびビーム幅は、そ
の時々に応じて調整すればよい。通常、レーザー光の強
度変動が生じた場合、形成される有機ＬＥＤ層の幅の変
動にすると５μｍ以内である。例えば、レーザー光の強
度変動による有機ＬＥＤ層の幅が５μｍとすると、有機
ＬＥＤ層を形成する第１電極の隣の第１電極から２．５
μｍ離れた位置に有機ＬＥＤ層のエッジが転写されるよ
うに、レーザー光の強度を設定すればよい。このように
して、転写された有機ＬＥＤ層は、常に第１電極２を覆
うように形成される。The width of the organic LED layer that covers the first electrode 2 formed by thermal transfer is the same even if the laser light intensity is the same.
The intensity and the beam width of the laser beam may be adjusted according to the time, since the intensity varies depending on the thickness of the transfer film and the thermal conductivity of the material constituting the transfer film. Usually, when the intensity of the laser beam fluctuates, the width of the organic LED layer formed is fluctuated within 5 μm. For example, if the width of the organic LED layer due to the intensity variation of the laser light is 5 μm, the width of the organic LED layer is 2.5 μm from the first electrode next to the first electrode forming the organic LED layer.
The intensity of the laser beam may be set so that the edge of the organic LED layer is transferred to a position separated by μm. Thus, the transferred organic LED layer is formed so as to always cover the first electrode 2.
【００４６】次に、有機ＬＥＤ層４を形成した熱転写シ
ート１９からなる転写フィルム２０と基板とを、有機Ｌ
ＥＤ層４が第１電極および先に転写した有機ＬＥＤ層３
の表面に接するように配置し、有機ＬＥＤ層３を転写し
た時と同様にレーザー光強度を設定して照射することに
より、有機ＬＥＤ層４を転写する（図５（ｂ））。次い
で、熱転写シート１９を剥離して、有機ＬＥＤ層４の転
写を完了する（図５（ｃ））。Next, the transfer film 20 composed of the thermal transfer sheet 19 on which the organic LED layer 4 is formed and the substrate are
ED layer 4 has first electrode and organic LED layer 3 previously transferred
The organic LED layer 4 is transferred by setting and irradiating the laser light intensity in the same manner as when transferring the organic LED layer 3 (FIG. 5B). Next, the thermal transfer sheet 19 is peeled off to complete the transfer of the organic LED layer 4 (FIG. 5C).
【００４７】次に、上記の熱転写と同様にして、有機Ｌ
ＥＤ層５を形成した熱転写シート１９からなる転写フィ
ルム２０を用いて有機ＬＥＤ層５を形成することにより
（図６（ｄ））、発光素子（１）が得られる（図６
（ｅ））。Next, in the same manner as in the thermal transfer described above, the organic L
The light emitting element (1) is obtained by forming the organic LED layer 5 using the transfer film 20 including the thermal transfer sheet 19 on which the ED layer 5 is formed (FIG. 6D) (FIG. 6).
(E)).
【００４８】このようにして、第１電極間で有機ＬＥＤ
層５と有機ＬＥＤ層３または有機ＬＥＤ層４が重ね合わ
さった構成が実現できる。実際には、レーザー光強度の
変動により、第１電極間で有機ＬＥＤ層５と有機ＬＥＤ
層３または有機ＬＥＤ層４が接していたり、少し離れて
形成される場合もあるが、本発明の主旨である常に有機
ＬＥＤ層が第１電極を覆うように形成された構成が実現
されて、第１電極と第２電極間のリークを防ぐという目
的は達成できる。Thus, the organic LED is provided between the first electrodes.
A configuration in which the layer 5 and the organic LED layer 3 or the organic LED layer 4 are overlapped can be realized. In practice, the organic LED layer 5 and the organic LED
Although the layer 3 or the organic LED layer 4 may be in contact with or formed a little apart, a configuration in which the organic LED layer is always formed to cover the first electrode, which is the gist of the present invention, is realized. The object of preventing leakage between the first electrode and the second electrode can be achieved.
【００４９】これまで、有機ＬＥＤ層のみを熱転写する
発光素子（１）を製造工程について説明したが、第２電
極と有機ＬＥＤ層とを形成した転写フィルムを用いて熱
転写することにより、発光素子（２）を製造することが
できる。The manufacturing process of the light emitting element (1) in which only the organic LED layer is thermally transferred has been described above, but the light emitting element (1) is thermally transferred using a transfer film on which the second electrode and the organic LED layer are formed. 2) can be manufactured.
【００５０】（実施形態６）製造方法（２）は、発光素
子（３）および発光素子（４）を製造するにあたり、パ
ターン化された第１電極上と第１電極間および第１電極
のエッジ部分を含む一部領域に渡って形成された絶縁膜
に渡って、有機ＬＥＤ層または有機ＬＥＤ層／第２電極
が熱転写されるようにレーザー光を照射して、複数の有
機ＬＥＤ層または複数の有機ＬＥＤ層／第２電極を形成
することを特徴とする。具体的には、製造方法（１）に
おけるパターン形成された第１電極を設けた基板の代わ
りに、第１電極間および第１電極のエッジ付近に渡って
形成された絶縁膜を設けた基板を用いることにより、発
光素子（３）および発光素子（４）を製造することがで
きる。(Embodiment 6) In the manufacturing method (2), when manufacturing the light emitting element (3) and the light emitting element (4), on the patterned first electrode, between the first electrodes, and at the edge of the first electrode. The organic LED layer or the organic LED layer / the second electrode is irradiated with laser light so as to be thermally transferred over the insulating film formed over the partial region including the portion, and the plurality of organic LED layers or the plurality of It is characterized in that an organic LED layer / second electrode is formed. Specifically, instead of the substrate provided with the patterned first electrodes in the manufacturing method (1), a substrate provided with an insulating film formed between the first electrodes and near the edges of the first electrodes is used. By using this, the light-emitting element (3) and the light-emitting element (4) can be manufactured.
【００５１】[0051]
【実施例】この発明を実施例および比較例に基づいてさ
らに具体的に説明するが、この実施例によりこの発明が
限定されるものではない。EXAMPLES The present invention will be described more specifically based on examples and comparative examples, but the present invention is not limited by these examples.
【００５２】（実施例）透明電極として膜厚１５０ｎｍ
のＩＴＯ膜が幅１００μｍ、ピッチ１２０μｍのストラ
イプ状に形成されたガラス基板を、イソプロピルアルコ
ールで超音波洗浄後、乾燥させた。公知の熱転写シート
（例えば、特開平１１−２６０５４９号公報参照）上
に、蒸着法により、発光層としてトリス（８−ヒドロキ
シキノリナト）アルミニウム（Ａｌｑ3）、ホール輸送
層として４，４’−ビス［Ｎ−（１−ブチル）−フェニ
ルアミノ］ビフェニル（ＮＰＢ）を順次、蒸着速度０．
２ｎｍ／ｓｅｃで膜厚がそれぞれ５０ｎｍになるように
形成し、転写フィルムを得た。(Example) 150 nm in thickness as a transparent electrode
A glass substrate having an ITO film formed in a stripe shape with a width of 100 μm and a pitch of 120 μm was ultrasonically washed with isopropyl alcohol and dried. On a known thermal transfer sheet (see, for example, JP-A-11-260549), tris (8-hydroxyquinolinato) aluminum (Alq 3 ) as a light emitting layer and 4,4′-bis as a hole transporting layer by a vapor deposition method. [N- (1-Butyl) -phenylamino] biphenyl (NPB) was sequentially deposited at a deposition rate of 0.1%.
The transfer film was formed at a thickness of 2 nm / sec so that the film thickness was 50 nm.
【００５３】転写フィルムのホール輸送層がＩＴＯ膜表
面に接するように転写フィルムを配置し、フィルム表面
にレーザー光を、ストライプ状に形成されたＩＴＯ膜の
ラインに沿って移動させながら照射した。照射すると
き、レーザー光の中心位置（レーザー光幅の中心）がＩ
ＴＯ膜の幅の中心に一致するように調整し、レーザー光
の照射幅が１３５μｍになるようにレーザー光の強度を
調整した。次いで、レーザー光の中心位置を２４０μｍ
だけＩＴＯ膜のストライプラインに直交する方向に移動
させて、同様にレーザー光を照射した。このようにして
５０本のＩＴＯ膜のストライプラインについて、順次、
レーザー光を照射した。次いで、発光層およびホール輸
送層からなる転写層（有機ＬＥＤ層）を残して、熱転写
シートを剥離した。光学顕微鏡でガラス基板表面を観察
したところ、有機ＬＥＤ層がＩＴＯ膜表面を覆うように
形成されていることが確認できた。The transfer film was arranged so that the hole transport layer of the transfer film was in contact with the surface of the ITO film, and a laser beam was irradiated on the film surface while moving along the lines of the ITO film formed in a stripe shape. When irradiating, the center position of the laser beam (the center of the laser beam width) is I
The width of the TO film was adjusted to coincide with the center of the width, and the intensity of the laser light was adjusted so that the irradiation width of the laser light became 135 μm. Next, the center position of the laser beam was set to 240 μm
The laser beam was similarly irradiated while being moved only in the direction perpendicular to the stripe line of the ITO film. In this way, for 50 stripe lines of the ITO film,
Irradiated with laser light. Next, the thermal transfer sheet was peeled off leaving a transfer layer (organic LED layer) composed of a light emitting layer and a hole transport layer. Observation of the glass substrate surface with an optical microscope confirmed that the organic LED layer was formed so as to cover the ITO film surface.
【００５４】上記と同様の方法で、ＩＴＯ膜のストライ
プラインの１つおきに有機ＬＥＤ層を形成し、再度同様
な方法で、まだ有機ＬＥＤ層が形成されていないＩＴＯ
膜表面に有機ＬＥＤ層を形成した。熱転写シートを剥離
した後、光学顕微鏡でガラス基板表面を観察したとこ
ろ、有機ＬＥＤ層がＩＴＯ膜表面を覆うように形成さ
れ、ＩＴＯ膜間で２つの有機ＬＥＤ層が重なって形成さ
れていることが確認できた。An organic LED layer is formed on every other stripe line of the ITO film in the same manner as described above, and again in the same manner, the ITO layer on which the organic LED layer has not been formed is formed.
An organic LED layer was formed on the film surface. After peeling off the thermal transfer sheet, the glass substrate surface was observed with an optical microscope. As a result, it was found that the organic LED layer was formed so as to cover the ITO film surface, and that the two organic LED layers were formed to overlap between the ITO films. It could be confirmed.
【００５５】得られた基板上に、メタルマスクを用いた
蒸着により、金属電極として膜厚約１００ｎｍのアルミ
ニウム膜を、幅３００μｍ、ピッチ３５０μｍのストラ
イプ状に形成して有機ＬＥＤ発光素子を得た。ＩＴＯ透
明電極とアルミニウム電極の間に電圧を印加して電流を
流したところ、両電極間に形成された有機ＬＥＤ層はす
べて緑色に発光し、両電極間にリークが生じていないこ
とが確認できた。On the obtained substrate, an aluminum film having a thickness of about 100 nm was formed as a metal electrode in the form of a stripe having a width of 300 μm and a pitch of 350 μm by vapor deposition using a metal mask to obtain an organic LED light emitting device. When a current was applied by applying a voltage between the ITO transparent electrode and the aluminum electrode, all of the organic LED layers formed between the two electrodes emitted green light, and it was confirmed that no leak occurred between the two electrodes. Was.
【００５６】（比較例）レーザー光の照射幅をＩＴＯ膜
の幅と同じ１００μｍになるように調整した以外は、実
施例と同様にして有機ＬＥＤ発光素子を得た。ＩＴＯ透
明電極とアルミニウム電極の間に電圧を印加して電流を
流したところ、両電極間に形成された有機ＬＥＤ層の発
光が観察されなかった。光学顕微鏡で観察したところ、
ＩＴＯ透明電極上に有機ＬＥＤ層が形成されていない領
域が多数あることがわかった。(Comparative Example) An organic LED light emitting device was obtained in the same manner as in Example except that the irradiation width of the laser beam was adjusted to be 100 μm, which is the same as the width of the ITO film. When a voltage was applied between the ITO transparent electrode and the aluminum electrode to flow a current, no light was emitted from the organic LED layer formed between the two electrodes. When observed with an optical microscope,
It was found that there were many regions where the organic LED layer was not formed on the ITO transparent electrode.
【００５７】[0057]
【発明の効果】本発明によれば、第１電極と第２電極間
のリークがなくなるため、常に良好な発光をする有機Ｌ
ＥＤ発光素子を提供することができる。また、発光幅が
変動することがなくなるので、常に均一な発光が得ら
れ、ディスプレイを製造した場合、表示品位の良好なデ
ィスプレイを提供することができる。特に、アクティブ
マトリックス基板上に、本発明の構成で有機ＬＥＤ層を
逆積層で形成した場合、基板と反対側に光が取り出せ、
少ない消費電力で輝度の高い発光が取り出せるので、低
消費電力で、表示品位の良好なアクティブ駆動型のディ
スプレイを提供することができる。また、形成する有機
ＬＥＤ層を赤色、緑色、青色の３種とすることで、フル
カラーディスプレイを提供することができる。According to the present invention, since there is no leakage between the first electrode and the second electrode, an organic light emitting diode that always emits good light is provided.
An ED light emitting device can be provided. In addition, since the light emission width does not change, uniform light emission is always obtained, and when a display is manufactured, a display with good display quality can be provided. In particular, when an organic LED layer is formed on an active matrix substrate by reverse lamination with the configuration of the present invention, light can be extracted to the side opposite to the substrate,
Since high-luminance light emission can be obtained with low power consumption, an active drive display with low power consumption and good display quality can be provided. In addition, a full-color display can be provided by forming three types of organic LED layers of red, green, and blue.
【図１】本発明の有機ＬＥＤ発光素子（実施の形態１）
の概略断面図である。FIG. 1 is an organic LED light emitting device of the present invention (Embodiment 1).
It is a schematic sectional drawing of.
【図２】本発明の有機ＬＥＤ発光素子（実施の形態２）
の概略断面図である。FIG. 2 is an organic LED light emitting device of the present invention (Embodiment 2).
FIG.
【図３】本発明の有機ＬＥＤ発光素子（実施の形態３）
の概略断面図である。FIG. 3 is an organic LED light emitting device of the present invention (Embodiment 3).
It is a schematic sectional drawing of.
【図４】本発明の有機ＬＥＤ発光素子（実施の形態４）
の概略断面図である。FIG. 4 is an organic LED light emitting device of the present invention (Embodiment 4).
It is a schematic sectional drawing of.
【図５】本発明の有機ＬＥＤ発光素子の製造工程（実施
の形態５）を示す概略断面図である。FIG. 5 is a schematic cross-sectional view showing a manufacturing process (Embodiment 5) of the organic LED light emitting device of the present invention.
【図６】本発明の有機ＬＥＤ発光素子の製造工程（実施
の形態５）を示す概略断面図である。FIG. 6 is a schematic cross-sectional view showing a manufacturing process (Embodiment 5) of the organic LED light emitting device of the present invention.
【図７】本発明の有機ＬＥＤ発光素子（実施の形態２）
とアクティブマトリックス基板とを組み合わせた概略平
面図である。FIG. 7 is an organic LED light emitting device of the present invention (Embodiment 2).
FIG. 4 is a schematic plan view in which a combination of the first embodiment and an active matrix substrate are combined.
【図８】従来の有機ＬＥＤ発光素子用のアクティブマト
リックス基板を示す概略平面図である。FIG. 8 is a schematic plan view showing a conventional active matrix substrate for an organic LED light emitting device.
【図９】従来の熱転写による有機ＬＥＤ層の形成工程を
示す概略断面図である。FIG. 9 is a schematic cross-sectional view showing a conventional process of forming an organic LED layer by thermal transfer.
【図１０】従来の熱転写による有機ＬＥＤ層の形成工程
を示す概略断面図である。FIG. 10 is a schematic cross-sectional view showing a conventional process of forming an organic LED layer by thermal transfer.
【図１１】従来の熱転写による有機ＬＥＤ層の形成工程
を示す概略断面図である。FIG. 11 is a schematic cross-sectional view showing a conventional process of forming an organic LED layer by thermal transfer.
【図１２】従来の熱転写で製造された有機ＬＥＤ発光素
子の一例を示す概略断面図である。FIG. 12 is a schematic sectional view showing an example of a conventional organic LED light emitting device manufactured by thermal transfer.
【図１３】従来の熱転写で製造された有機ＬＥＤ発光素
子の問題点を説明する概略断面図である。FIG. 13 is a schematic cross-sectional view illustrating a problem of an organic LED light emitting device manufactured by a conventional thermal transfer.
１ 基板 ２ 第１電極 ３、４、５ 有機ＬＥＤ層 ６、８、９、１０ 第２電極 １１ データライン １２ スキャンライン １３ コモンライン １４ 絶縁膜 １５ スイッチングＴＦＴ １６ 駆動用ＴＦＴ １７ コンデンサー １８ レーザー光 １９ 熱転写シート ２０ 転写フィルム Reference Signs List 1 substrate 2 first electrode 3, 4, 5 organic LED layer 6, 8, 9, 10 second electrode 11 data line 12 scan line 13 common line 14 insulating film 15 switching TFT 16 driving TFT 17 capacitor 18 laser light 19 thermal transfer Sheet 20 Transfer film
フロントページの続き Ｆターム(参考） 3K007 AB02 AB04 AB18 BA06 CA01 CB01 DA01 DB03 EA00 EB00 FA01 5C094 AA08 AA10 AA31 AA42 AA43 AA48 BA03 BA12 BA27 CA19 CA24 DA13 DB01 DB04 EA04 EA05 EB02 FA01 FA02 FB01 GB10 Continued on the front page F term (reference) 3K007 AB02 AB04 AB18 BA06 CA01 CB01 DA01 DB03 EA00 EB00 FA01 5C094 AA08 AA10 AA31 AA42 AA43 AA48 BA03 BA12 BA27 CA19 CA24 DA13 DB01 DB04 EA04 EA05 EB02 FA01 FA02 FB01 GB10
Claims (6)
介するか、介さずして形成された少なくとも第１層と第
２層からなる有機ＬＥＤ層およびその上部に形成された
第２電極とからなる有機ＬＥＤ発光素子であって、第１
層と第２層の隣接する端部が、第１電極間の位置上にお
いて部分的に重なって形成されていることを特徴とする
有機ＬＥＤ発光素子。1. An organic LED layer comprising at least a first layer and a second layer formed with or without an insulating film between patterned first electrodes, and a second electrode formed thereon. An organic LED light-emitting element comprising:
An organic LED light emitting element, wherein adjacent ends of the layer and the second layer are partially overlapped on a position between the first electrodes.
第２層上の全面に第２電極が形成され、第１層と第２層
の隣接する端部の部分的に重なっている領域が、第１層
の側部と第１層上に存在する第２電極上とに存在する請
求項１に記載の有機ＬＥＤ発光素子。2. A second electrode is formed on the entire surface of the first layer,
A second electrode is formed on the entire surface on the second layer, and a region where the first layer and the adjacent end of the second layer partially overlap exists on the side of the first layer and on the first layer. The organic LED light-emitting device according to claim 1, which is present on the second electrode.
する陽極、第２電極が有機ＬＥＤ層に電子を注入する陰
極であり、有機ＬＥＤ層を構成する層が、それぞれ発光
層ならびに任意にホール注入層、ホール輸送層および電
子輸送層から構成される請求項１または２に記載の有機
ＬＥＤ発光素子。3. The first electrode is an anode for injecting holes into the organic LED layer, the second electrode is a cathode for injecting electrons into the organic LED layer, and the layers constituting the organic LED layer are respectively a light emitting layer and optionally a light emitting layer. 3. The organic LED light emitting device according to claim 1, comprising a hole injection layer, a hole transport layer, and an electron transport layer.
する陽極、第１電極が有機ＬＥＤ層に電子を注入する陰
極であり、有機ＬＥＤ層を構成する層が、それぞれ発光
層ならびに任意にホール注入層、ホール輸送層および電
子輸送層から構成される請求項１または２に記載の有機
ＬＥＤ発光素子。4. The second electrode is an anode for injecting holes into the organic LED layer, the first electrode is a cathode for injecting electrons into the organic LED layer, and the layers constituting the organic LED layer are respectively a light emitting layer and optionally a light emitting layer. 3. The organic LED light emitting device according to claim 1, comprising a hole injection layer, a hole transport layer, and an electron transport layer.
光素子を製造するにあたり、パターン化された第１電極
上および第１電極間に渡って、有機ＬＥＤ層または有機
ＬＥＤ層／第２電極が熱転写されるようにレーザー光を
照射して、有機ＬＥＤ層または有機ＬＥＤ層／第２電極
を形成することを特徴とする有機ＬＥＤ発光素子の製造
方法。5. An organic LED layer or an organic LED layer / second electrode over a patterned first electrode and between the first electrodes in manufacturing the organic LED light emitting device according to claim 1 or 2. A method for manufacturing an organic LED light-emitting device, comprising irradiating a laser beam so as to transfer heat to form an organic LED layer or an organic LED layer / second electrode.
光素子を製造するにあたり、パターン化された第１電極
上と第１電極間および第１電極のエッジ部分を含む一部
領域に渡って形成された絶縁膜に渡って、有機ＬＥＤ層
または有機ＬＥＤ層／第２電極が熱転写されるようにレ
ーザー光を照射して、有機ＬＥＤ層または有機ＬＥＤ層
／第２電極を形成することを特徴とする有機ＬＥＤ発光
素子の製造方法。6. In manufacturing the organic LED light emitting device according to claim 1 or 2, over the patterned first electrode, between the first electrodes, and over a partial region including an edge portion of the first electrode. The organic LED layer or the organic LED layer / second electrode is irradiated with a laser beam so as to thermally transfer the organic LED layer or the organic LED layer / second electrode over the formed insulating film, thereby forming the organic LED layer or the organic LED layer / second electrode. A method for manufacturing an organic LED light emitting device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001118456A JP2002313585A (en) | 2001-04-17 | 2001-04-17 | Organic led and method of manufacturing it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001118456A JP2002313585A (en) | 2001-04-17 | 2001-04-17 | Organic led and method of manufacturing it |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002313585A true JP2002313585A (en) | 2002-10-25 |
Family
ID=18968842
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001118456A Pending JP2002313585A (en) | 2001-04-17 | 2001-04-17 | Organic led and method of manufacturing it |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002313585A (en) |
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2001
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